JP2005213080A - Method for producing crystallized quartz thin film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for producing a crystallized quartz thin film, by which a crystallized quartz epitaxial thin film having a pattern form of a mask is grown on a substrate such as sapphire, silicon or gallium arsenide (GaAs) placed in an electric furnace in the growth of the crystallized quartz epitaxial thin film under an atmospheric pressure; and to provide the crystallized quartz thin film. <P>SOLUTION: This method is characterized in that the crystallized quartz thin film is grown in a pattern form of a mask on a substrate on which the mask is placed, in the crystallized quartz thin film grown on the substrate by a vapor deposition method. In the method for producing the crystallized quartz thin film grown on the substrate by the vapor deposition method, a plurality of crystallized quartz base plates are produced by placing a mask on a substrate and growing crystallized quartz epitaxial thin films each having a pattern form of the mask on a substrate. The thickness of the mask is set to be ≥110% and ≤150% of the thickness of a desired thin film. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

     The present invention relates to a crystal thin film used for an oscillator, a vibrator, a surface acoustic wave device for a high frequency filter, an optical waveguide, a semiconductor substrate, and the like, and a manufacturing method thereof.

     Conventionally, a thin plate made of quartz called a quartz plate is generally used for an oscillator, a vibrator, a surface acoustic wave device for a high frequency filter, an optical waveguide, a semiconductor substrate, and the like. With regard to the thin plate called quartz plate made of this crystal, the recent trend is centering on transmission systems in the communications field, and the mounting parts are becoming increasingly smaller and more thin from the market. In fact, there is a demand for weight reduction and price reduction.

     On the other hand, the previous quartz plate is a hydrothermal growth method in which the pressure inside a conventional pressure vessel called autoclave is filled with an alkaline aqueous solution such as sodium carbonate or sodium hydroxide, and the state inside the previous autoclave is changed to a high temperature and high pressure state. In general, an artificial quartz crystal grown by a growth method called “cutting” is cut into a plate shape and further polished to a desired thickness to finally make a small thin quartz crystal plate.

     However, the hydrothermal growth method described above requires a period of at least 2-3 months for the growth of the artificial quartz, and in the course of the polishing process until the thin quartz plate is produced from the artificial quartz, The result was to discard an amount of quartz that reached approximately 90% of the size of the artificial quartz.

     Therefore, by vaporizing one or more kinds of silicon alkoxides as a silicon source under atmospheric pressure, hydrogen chloride as a reaction accelerator and carrier gas such as nitrogen gas from sapphire, silicon, gallium arsenide (GaAs) or the like. A method for producing a crystal thin film for growing a crystal epitaxial thin film on a substrate by transporting the substrate on the substrate using the carrier gas described above and reacting with oxygen gas on the substrate, and application of the crystal thin film itself. it was thought.

JP 2002-80296 A JP 2003-289236 A

     The applicant has not found any prior art documents related to the present invention other than the prior art documents specified by the prior art document information described above by the time of filing of the present application.

     However, in the method for producing a crystal thin film obtained by growing one or a plurality of types of silicon alkoxide on the substrate under atmospheric pressure, the size of the entire substrate made of sapphire, silicon, gallium arsenide (GaAs), or the like. In order to be used for oscillators, vibrators, surface acoustic wave elements for high frequency filters, optical waveguides, semiconductor substrates, etc., the quartz thin film of the size suitable for housing in each electronic component There was a problem that it was necessary to cut it small.

     Further, in recent electronic parts, if the crystal resonator is taken as an example, the outer size of the crystal resonator container is 3.2 mm × 2.5 mm × 1.0 mm, which is very small, Cutting a crystal plate accommodated in a crystal resonator having such an external size from a thin film grown on the previous substrate has a problem that the production efficiency is not good.

     The present invention has been made under the technical background as described above. Therefore, the object thereof is placed in an electric furnace in the growth of a crystal epitaxial thin film under atmospheric pressure shown in FIG. A crystal thin film for producing a plurality of crystal base plates by growing a crystal epitaxial thin film having a mask pattern mounted on a substrate such as sapphire, silicon, or gallium arsenide (GaAs), and a method for manufacturing the same It is to be.

     In order to achieve the above object, the present invention relates to a crystal thin film grown on a substrate by vapor phase epitaxy, wherein the crystal thin film is grown in a mask pattern shape on the substrate on which the mask is placed. It is characterized by being.

     Further, in a method for producing a quartz thin film grown on a substrate by vapor phase growth, a mask is placed on the previous substrate, and a plurality of quartz epitaxial thin films having a mask pattern shape are grown on the substrate. It is characterized by making individual quartz base plates.

     Further, the thickness of the mask placed on the previous substrate is 110% or more and 150% or less of the desired thickness of the thin film.

     In the crystal thin film of the present invention, the crystal thin film peeled off from the substrate can be accommodated as it is in the electronic component to be used without further processing such as cutting and polishing, and the production efficiency of the crystal plate is remarkably increased.

     In addition, according to the method for producing a quartz thin film of the present invention, a large number of quartz thin films having the same shape can be produced very efficiently and with a high yield.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
In addition, the same code | symbol in each figure shall show the same object.

     FIG. 1 is a schematic diagram showing a method for producing a crystal thin film 2 according to the present invention. That is, FIG. 1 shows a state in which the mask 3 is attached in close contact with a substrate 1 made of sapphire, silicon, gallium arsenide (GaAs) or the like placed on a substrate table supported by a substrate rod. FIG.

     FIG. 2 is a schematic view of the mask 3 as viewed from above, showing an example of the mask 3 that is mounted in close contact with the substrate 1 such as sapphire, silicon, or gallium arsenide (GaAs) placed on the substrate table. is there. Since the temperature in the electric furnace is high, the mask 3 is made of a heat resistant material such as glass or quartz. Further, the pattern 4 of the mask 3 has a shape of a crystal plate accommodated in a desired electronic component. Of course, in addition to the plurality of square patterns 4 listed here, a circle, a rectangle, an ellipse, a polygon, Needless to say, even if the shape of each pattern is small and many patterns are formed on one mask, they are included in the technical scope of the present invention. The thickness of the mask 3 is 110% or more and 150% or less of the desired thickness of the thin film. It is necessary that the mask 3 is firmly attached to the substrate 1 so that the crystal thin film 2 grown on the substrate 1 is not blurred.

FIG. 3 is a schematic view showing a method of manufacturing the quartz crystal thin film 2 of the present invention, and sapphire, silicon, or gallium arsenide (GaAs) mounted on a substrate table supported by a substrate rod in an electric furnace. It is the schematic side surface figure seen from the side surface direction which showed a mode that it closely_contact | adhered on the board | substrates 1 etc. and mounted | wore with the mask 3. FIG. When one or more kinds of silicon alkoxides are grown on the substrate 1 under atmospheric pressure in this state, the crystal epitaxial thin film 2 having the pattern shape 4 of the mask 3 is grown.
1 and 3, the direction of the airflow in the electric furnace is the vertical direction, but the effect of the present invention can be achieved even when the electric furnace is placed horizontally and the direction of the airflow is the horizontal direction.

FIG. 4 shows a crystal thin film grown on a pattern shape 4 of the mask 3 after the growth of one or more kinds of silicon alkoxides on the substrate 1 under atmospheric pressure is completed, the electric furnace is opened and the mask 3 is removed from the substrate 1. It is the schematic diagram seen from diagonally upper direction which showed a mode that 2 was taken out separately. The crystal film can be easily removed from the substrate,
Can be used as a quartz plate.

     In the first embodiment, the mask 3 made of the heat-resistant material described above is used. However, the mask 3 may be formed on the substrate 1 with a heat-resistant photolithography or the like. Needless to say, such a case is also included in the technical scope of the present invention.

     FIG. 5 is a schematic diagram of an apparatus for performing epitaxial growth of the crystal thin film 2 on a substrate 1 such as sapphire, silicon, or gallium arsenide (GaAs) mounted therein.

     FIG. 6 is a diagram showing a state in which the crystal thin film 2 is epitaxially grown on the substrate 1 such as sapphire, silicon, or gallium arsenide (GaAs) under the atmospheric pressure of one or plural types of silicon alkoxides of FIG. It is the schematic schematic diagram which expanded the part.

It is the schematic diagram seen from diagonally upward which showed the state which closely_contact | adhered on the board | substrate mounted on the board | substrate stand supported by the board | substrate rod of this invention, and mounted | wore the mask. It is the schematic seen from the upper surface direction of the mask which shows an example of the mask to mount | wear. FIG. 2 is a schematic diagram showing a method for producing a quartz crystal thin film according to the present invention, on a substrate such as sapphire, silicon, or gallium arsenide (GaAs) mounted on a substrate table supported by a substrate rod in an electric furnace. It is the side surface schematic diagram seen from the side surface direction which showed a mode that the mask was mounted | worn in close contact with. After one or more silicon alkoxides were grown on the substrate under atmospheric pressure, the electric furnace was opened, the mask was removed from the substrate, and the crystal thin film grown in the mask pattern shape was individually removed. It is the schematic diagram seen from the diagonal upper direction. It is a schematic diagram of an apparatus for performing epitaxial growth of a conventional quartz thin film on a substrate such as sapphire, silicon, or gallium arsenide (GaAs) mounted therein. It is the schematic model which expanded the board | substrate part of the figure which shows a mode that the crystal growth of the crystal thin film on the board | substrate under the atmospheric pressure of the conventional 1 type or multiple types of silicon alkoxide was carried out.

Explanation of symbols

1 Substrate 2 Crystal thin film 3 Mask 4 Mask pattern shape

Claims (3)

In the crystal thin film grown on the substrate by vapor phase growth,
A crystal thin film grown in a pattern shape of the mask on the substrate on which the mask is placed. In a method for producing a quartz thin film grown on a substrate by vapor deposition,
A method for producing a crystal thin film, wherein a mask is placed on the substrate, and a crystal epitaxial thin film having a pattern shape of the mask is grown on the substrate to produce a plurality of crystal base plates.      The method for producing a crystal thin film according to claim 2, wherein the thickness of the mask is 110% or more and 150% or less of a desired thin film thickness.

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