JP2005209759A - Semiconductor laser heating device and laser processing machine - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor heating device which improves efficiency in using power source and a transient response in a low current area to realize the accurate radiation reproductivity of laser power. <P>SOLUTION: According to the semiconductor device 1, a voltage output from a DC power source 6 is applied to a loop that is formed of a semiconductor laser 1 and a current detector 5 detecting a drive current. Then a current command value signal VS from a radiation command 7 is compared with a current detecting signal VC output from the current detector 5 at a feedback means 8 consisting of a delay means 10, a power calculating means 11, a comparison/control means 12, and adding means 13. The compared signal is fed back to the DC power source 6, where an output voltage from the DC power source 6 is changed to control the drive current of the semiconductor laser 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor laser heating apparatus that performs local heating using the optical output of a semiconductor laser.

  In recent years, a semiconductor laser is used as a non-contact local heating source suitable for soldering or joining resin materials, etc., using a semiconductor laser, transmitting this optical energy output through an optical fiber, condensing the optical energy output Has begun to be widely used.

  A conventional semiconductor laser heating apparatus includes a DC power supply that supplies a drive current to the semiconductor laser and a current limiting circuit that limits the drive current to the semiconductor laser to an optimum value (see, for example, Patent Document 1). .

  FIG. 7 shows a circuit diagram of the conventional semiconductor laser heating apparatus, wherein 101 is a semiconductor laser, 102 is a transistor for limiting an excessive current flowing through the semiconductor laser, 103 is a resistor, 104 is a variable resistor, and 105 is A Zener diode 106 that stabilizes the voltage is constituted by a DC power source that supplies power to the semiconductor laser.

  The operation of the semiconductor laser heating apparatus configured as described above will be described.

  The voltage output from the DC power source 106 is divided by the resistor 103, the Zener diode 105, and the variable resistor 104, and supplied as a base voltage to the base of the transistor 102. A stable and constant voltage is supplied from the emitter of the transistor 102. Supplied to the semiconductor laser.

  Even when the output voltage of the DC power supply 106 fluctuates, a constant voltage stabilized by the Zener diode 105 is supplied to the base voltage of the transistor 102. Therefore, the semiconductor laser 101 is driven stably without increasing current. A current is supplied, and the laser power irradiated from the semiconductor laser 101 does not change, and a stable laser power is irradiated.

  However, the voltage output from the DC power source 106 is shared between the collector and emitter of the transistor 102 in order to supply a stable driving current to the semiconductor laser 101, and is converted into heat as power proportional to the driving current of the semiconductor laser 101. Converted and consumed.

  FIG. 8 shows a circuit diagram of another conventional semiconductor laser heating apparatus, in which 101 is a semiconductor laser, 112 is an optical fiber that transmits laser light emitted from the semiconductor laser, and 113 is a collector that condenses the laser light. Optical means, 114 is laser light, 109 is a transistor for controlling current, 108 is a current detector for detecting current flowing in the semiconductor laser, 106 is a DC power supply for supplying power to the semiconductor laser, 110 is an output voltage of the current detector And a current comparator 111 for comparing the current setting value of the irradiation command unit and an irradiation command unit for setting a current value flowing through the semiconductor laser.

  The operation of the semiconductor laser heating apparatus configured as described above will be described.

The voltage output from the DC power supply 106 is applied to a closed loop composed of the semiconductor laser 101, the transistor 109, and the current detector 108. When a current value command to the semiconductor laser 101 is output from the irradiation command unit 111 to the current comparator 110, the current comparator 110 compares the current value command with the output voltage of the current detector 108. Is output, and feedback control is performed so that the drive current of the semiconductor laser 101 becomes the command current value of the irradiation command unit 111.

  The laser beam generated by the semiconductor laser 101 is condensed by the condensing unit 113 via the optical fiber 112, and then irradiated to the workpiece 115 as the laser beam 114 for the command time of the irradiation command unit 111. 115 is heated.

In the case of a diode load such as the semiconductor laser 101 of FIG. 8, the relationship between the injection power supplied to the semiconductor laser 101 from the DC power source 106 via the transistor 109 and the drive current is as shown in FIG. As the current increases, it increases monotonously, but when the drive current value is low, an excessive amount of injected power is required, making it difficult to control the injected power with respect to the drive current command. Vibration and current response delay may occur, and the transient response of the drive current may be hindered.
Japanese Patent No. 3256090 (page 9, Fig. 3)

  Since the conventional semiconductor laser heating apparatus is configured with such a circuit, the voltage output from the DC power supply is shared by the semiconductor laser and the transistor, and the transistor has power proportional to the drive current of the semiconductor laser. As a result, only a part of the output power of the DC power supply is supplied to the semiconductor laser, and the utilization efficiency of the input power supply as the whole apparatus is deteriorated.

  In addition, because the current value command of the irradiation command unit and the output voltage of the current detector are compared by the current comparison unit and feedback control is performed, the transient response becomes worse in the low current command region, causing an error in the detected current There is also a problem that the reproducibility of the laser power irradiated from the semiconductor laser deteriorates.

  An object of the present invention is to provide a semiconductor laser heating apparatus capable of improving the power supply utilization efficiency, improving the transient response in a low current region, and realizing accurate irradiation reproducibility of laser power. .

  In order to solve the above problems, a semiconductor laser heating apparatus according to claim 1 of the present invention includes a semiconductor laser in which at least one laser is connected in series, a DC power supply for supplying power to the semiconductor laser, and the semiconductor laser. A current detection unit that detects a drive current of the semiconductor laser, and an irradiation command unit that presets a current value corresponding to the irradiation power of the semiconductor laser, and further outputs the current detection unit based on a current setting value of the irradiation command unit It has a feedback means for feeding back the voltage to the DC power supply. With this configuration, the power loss consumed by the conventional control element such as a transistor is eliminated, and the power output from the DC power supply remains as it is without loss to the semiconductor laser. Since the power is supplied, the utilization efficiency of the power source is improved. In addition, the power loss consumed by control elements such as conventional transistors is a heat generation source, which has been a cause of temperature rise inside the device, but the heat source disappears, and a cooler such as a cooling fan. Can be miniaturized.

According to a second aspect of the present invention, there is provided the semiconductor laser heating device according to the first aspect, wherein the feedback means responds to a delay means for delaying the irradiation signal of the irradiation command section and an output signal of the delay means. Power calculating means for calculating the power supplied to the semiconductor laser, comparison control means for comparing and controlling the output signal of the delay means and the output signal of the current detector, the output signal of the comparison control means and the power calculating means In addition to the same effect as that of the semiconductor laser heating device according to claim 1, this configuration calculates the initial injection power of the semiconductor laser in accordance with the irradiation command signal. Transient response in the low current command area is improved by the power calculation means, no error occurs in the detected current, and the laser power emitted from the semiconductor laser is accurate. Isa is it to become.

  According to a third aspect of the present invention, there is provided the semiconductor laser heating device according to the first or second aspect, wherein the DC power source is a constant voltage type DC power source that changes an output voltage in accordance with an output signal of the adding means. Thus, in addition to the same effects as those of the semiconductor laser heating device according to claim 1 or 2, the configuration changes the input voltage of the AC power source that is input to the DC power source because the DC power source is a constant voltage type DC power source. Even so, the voltage output from the DC power supply does not fluctuate, and the drive current to the semiconductor laser becomes stable.

  According to a fourth aspect of the present invention, there is provided the semiconductor laser heating device according to any one of the first to third aspects, wherein the DC power source is a constant voltage switching DC that changes the output voltage by switching of the control element. According to this configuration, in addition to the same effect as the semiconductor laser heating device according to any one of claims 1 to 3, the loss of the control element of the DC power supply is reduced and the input current to the DC power supply is further increased. This reduces the efficiency of the DC power supply.

  The semiconductor laser heating apparatus according to claim 5 is the semiconductor laser heating apparatus according to any one of claims 1 to 4, wherein the DC power supply is an output from the DC power supply by a laser irradiation signal and a stop signal of the irradiation command section. A constant voltage switching DC power supply for irradiating and stopping the voltage is provided. With this configuration, in addition to the same effect as the semiconductor laser heating device according to any one of claims 1 to 4, a direct current is applied when the semiconductor laser is not irradiated. The operation of the power supply can be stopped and the supply of voltage to the semiconductor laser can be completely stopped, so that accidental accidental laser irradiation can be prevented and safety can be improved.

  According to a sixth aspect of the present invention, there is provided a semiconductor laser heating device according to any one of the first to fifth aspects, wherein an alarm is generated and the semiconductor laser when the output signal of the adding means exceeds a predetermined value. In addition to the same effect as the semiconductor laser heating device according to any one of claims 1 to 5, the alarm means for performing at least one of the interlock operations for stopping the operation of the heating device main body, It is possible to monitor the supply of electric power such as a decrease in energy supplied to the semiconductor laser due to deterioration of the element of the semiconductor laser, failure of the element, etc., and it is possible to monitor irradiation of an unstable laser from the semiconductor laser.

  According to a seventh aspect of the present invention, there is provided a semiconductor laser heating device according to any one of the first to sixth aspects, wherein an alarm is generated and a semiconductor is generated when an output signal of the current detection unit does not reach a predetermined value. An alarm means for performing at least one of interlock operations for stopping the operation of the laser heating apparatus main body is provided, and this configuration has the same effect as the semiconductor laser heating apparatus according to any one of claims 1 to 6. In addition, if the output voltage of the current detection unit cannot be detected due to a failure of the current detection unit during irradiation of the semiconductor laser, an overcurrent flowing through the semiconductor laser can be prevented, and the power supply monitoring to the semiconductor laser can be further improved. Can do.

  Further, a semiconductor laser heating device according to claim 8 is the semiconductor laser heating device according to any one of claims 1 to 7, wherein an optical fiber for transmitting a laser beam of the semiconductor laser and the laser beam are condensed and processed. In addition to the same effect as the semiconductor laser heating device according to any one of claims 1 to 7, this configuration transmits laser light of the semiconductor laser through an optical fiber. As a result, the operability of laser irradiation to the workpiece can be improved, and the reliability of laser processing can be improved.

  According to a ninth aspect of the present invention, there is provided a laser processing machine, a processing table on which a workpiece is placed, a driving unit that moves at least one of the movement of the processing table and the laser beam condensing unit, and a numerical value that controls the driving unit. A semiconductor laser heating device according to any one of claims 1 to 8, comprising control means and a semiconductor laser heating device according to any one of claims 1 to 8 that generates laser light. In addition to the same effect, the semiconductor laser heating device is comprehensively controlled by the numerical control means, so that the reliability of laser processing can be improved and mixing of defective products of the workpiece can be prevented.

  As described above, the present invention eliminates the power loss consumed by the conventional control elements such as transistors, and the power output from the DC power supply is supplied to the semiconductor laser as it is without any loss. Will be improved. In addition, the power loss consumed by control elements such as conventional transistors is a heat generation source, which has been a cause of temperature rise inside the device, but the heat source disappears, and a cooler such as a cooling fan. Can be miniaturized.

  Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to FIGS.

(Embodiment 1)
FIG. 1 is a block diagram of an embodiment of a semiconductor laser heating apparatus of the present invention.

  In FIG. 1, 1 is a semiconductor laser, 2 is an optical fiber for transmitting laser light, 3 is a condensing means for condensing the laser light, 4 is laser light, 5 is a current detector for detecting the driving current of the semiconductor laser, 6 Is a DC power supply for supplying power to the semiconductor laser, 7 is an irradiation command unit for presetting a current value corresponding to the irradiation power of the semiconductor laser, 8 is a delay means 10, a power calculation means 11, a comparison control means 12 and an addition means 13 And feedback means 15 constituted by the alarm means for stopping the operation when the output signal of the adding means 13 exceeds a predetermined value or when the output signal of the current detector 5 does not reach the predetermined value. 1 shows a semiconductor laser heating device. Reference numeral 18 denotes a workpiece.

  The operation of the semiconductor laser heating apparatus configured as described above will be described.

  The voltage output from the DC power source 6 is applied to a closed loop including one or more semiconductor lasers 1 connected in series and a current detection unit 5 that detects a driving current of the semiconductor laser 1. When the current command value signal VS to the semiconductor laser 1 is output from the irradiation command unit 7, the feedback unit 8 including the delay unit 10, the power calculation unit 11, the comparison control unit 12, and the addition unit 13 outputs the current detection unit 5. After comparison with the output voltage, it is input to the DC power source 6 and feedback controlled so that the drive current of the semiconductor laser 1 becomes the command current value of the irradiation command unit 7, and the laser beam from the semiconductor laser 1 for the command time of the irradiation command unit 7 Is generated and condensed by the light collecting means 3 through the optical fiber 2 and irradiated onto the workpiece 18.

The feedback means 8 performs a function of converting a sudden change in the current command value signal VS of the irradiation command section 7 into a smooth change by the delay means 10 and preventing a transient overshoot of the driving current of the semiconductor laser 1. Yes. A power calculation unit 11 that calculates and outputs a current value corresponding to the initial injection power to the semiconductor laser 1 in accordance with a current command value signal V2 that is an output signal of the delay signal 10, and a current command value that is an output signal of the delay unit 10 The comparison control means 12 that compares the signal V2 with the current detection signal VC that is the output signal of the current detector 5 and calculates and outputs the difference between them, the output signal of the comparison control means 12, and the output signal of the power calculation means 11 Is added to the DC power source 6, and the DC power source 6 supplies power according to the output signal of the adding unit 13.

  Further, when stopping the irradiation of the semiconductor laser 1, the irradiation command unit 7 sends an irradiation stop signal to the DC power supply 6 separately from the current command value signal VS so that the supply of power from the DC power supply 6 to the semiconductor laser 1 can be stopped. To prevent laser light from being accidentally irradiated due to an accident and to improve safety.

  The alarm means 15 gives an alarm when the output signal V4 of the adding means 13 exceeds a predetermined value during laser irradiation, or when the current detection signal VC, which is the output signal of the current detector 5 at the start of laser irradiation, does not reach the predetermined value. The display lamp is turned on, an alarm is issued, an interlock operation for stopping the operation of the apparatus main body is performed, or both are performed.

  FIG. 2 is a block diagram showing an example of the configuration of a constant voltage switching DC power supply.

  In FIG. 2, 21 is a primary rectifier diode that rectifies an AC power supply, 22 is a primary smoothing capacitor that smoothes the rectified voltage of the primary rectifier diode, and 23 is a switching that switches a DC voltage to convert it into a high-frequency AC voltage. A control element, 24 is a transformer for transforming an AC voltage, 25 is a secondary rectifier diode for rectifying the output voltage of the transformer, 26 is a secondary smoothing capacitor for smoothing the secondary rectified voltage, and 27 is a voltage for detecting a DC voltage. A detecting unit 28 compares the voltage command value with the output voltage of the voltage detecting unit and outputs a pulse signal to the switching control element, and 29 is a switching element that controls the pulse signal of the switching type control element 23.

  The operation of the constant voltage switching DC power supply configured as described above will be described.

  The AC power is rectified and smoothed by the primary rectifier diode 21 and the primary smoothing capacitor 22 and applied to the transformer 24 and the switching control element 23 as a DC voltage. On the other hand, when an operation start signal for the constant voltage switching DC power supply is input to the switch element 29 at the same time as the voltage command is input to the comparison control unit 28, a pulse signal is output from the comparison control unit 28 to the switching type control element 23. The primary coil of the transformer 24 is excited to induce an AC voltage in the secondary coil. The AC voltage is rectified and smoothed by the secondary rectifier diode 25 and the secondary smoothing capacitor 26 and output as a DC voltage. The output voltage is fed back from the voltage detection unit 27 to the comparison control unit 28 and controlled so that the output voltage becomes the voltage value of the voltage command.

  As described above, by making the DC power supply 6 a constant voltage switching DC power supply that changes the output voltage by switching the control element, the loss of the control element of the DC power supply 6 is reduced and the input current to the DC power supply 6 is reduced. Furthermore, the efficiency of the DC power supply can be further improved.

  In addition, even if the input voltage of the AC power source input to the DC power source 6 fluctuates by making the DC power source 6 a constant voltage type DC power source that changes the output voltage according to the output signal V4 from the adding means 13, The drive current to the semiconductor laser can be stabilized without the voltage output from the DC power supply 6 changing.

  FIG. 3 is a circuit diagram showing an example of the configuration of the power calculation means 11, the comparison control means 12, and the addition means 13 in FIG.

The operational amplifiers 33 and 34 are the power calculation means 11, and the variable resistors VR1 and VR2 correspond to the offset and gain of the amplifier, and are approximated in advance by a relationship curve (see FIG. 9) between the drive current injected into the semiconductor laser and the injected power. When the current command value signal V2 is input from the irradiation command section 7 through the delay means 10, the power command value signal VP corresponding to the initial injection power is calculated and output to the adding means 13. .

  Further, the comparison control unit 12 includes an operational amplifier 31, compares the current command value signal V2 with the current detection signal VC of the current detection unit 5 from the irradiation command unit 7 via the delay means 10, and the difference voltage is determined by an integration circuit. Then, the signal is output to the adding means 13 as a signal V3. The adding means 13 includes an operational amplifier 32, adds the output signal V3 of the comparison control means 12 and the power command value signal VP, and outputs the result to the DC power source 6 as an output signal V4.

  Note that the power command value signal VP assumes the injection power for the drive current, and the level (magnitude) of the power command input to the semiconductor laser 1 from the DC power source 6 at the initial stage of laser irradiation according to the magnitude of the current command value signal V2. Is a voltage value corresponding to. The power calculation means 11 calculates a power command value signal VP corresponding to the initial injected power (at the start of laser irradiation), and outputs a constant power command value signal VP during irradiation. During irradiation, the power command to the DC power supply 6 is corrected by the output of the comparison control means 12.

  FIG. 4 is a relationship diagram of the initial power command with respect to the current command, and shows a conventional example and the present embodiment. In the present embodiment, the current command is a current command value signal VS that is an output signal of the irradiation command unit 7, and the power command is an output signal V 4 from the adding means 13. In the conventional example, the current command is a command current value that is an output signal of the irradiation command unit 111, and the power command is a voltage that is an output signal of the current comparator 110 and corresponds to the base voltage of the transistor 109.

  The difference between the conventional example and the present embodiment is that the power command is offset by P1 when the current command is low. The offset and the injected power injected into the semiconductor laser from the DC power source 6 shown in FIG. It can be approximated to a current relationship curve. Since P1 is offset by the power calculation means 11, both the power command value signal VP and the output signal V4 are related to the current command.

  FIG. 5 is a circuit diagram showing an example of the configuration of the delay means, which includes a resistor R1, a capacitor C1, and an operational amplifier 51. When the current command value signal VS of the irradiation command section 7 is input, the resistor R1 and the capacitor Delayed corresponding to the integration time by C1, and output as a current command value signal V2. The delay means 10 functions to prevent a transient overshoot of the driving current of the semiconductor laser by converting a sudden change in current command of the irradiation command unit 7 into a smooth change.

  As described above, according to the present embodiment, the power loss consumed by the conventional control element such as a transistor is reduced by feeding back the current detection signal VC, which is the output voltage of the current detection unit 5, to the DC power source 6. Since the power output from the DC power supply 6 is lost and supplied to the semiconductor laser 1 without loss, the power supply utilization efficiency is improved. In addition, the power loss consumed by control elements such as conventional transistors is a heat generation source, which has been a cause of temperature rise inside the device, but the heat source disappears, and a cooler such as a cooling fan. Downsizing can be realized.

  Further, by providing the delay means 10 for delaying the irradiation signal (current command value signal VS), the power calculation means 11 for calculating the power command value signal VP corresponding to the initial injection power, and the adding means 13, the irradiation command signal ( The initial injection power of the semiconductor laser 1 changes in accordance with the current command value signal VS), the transient response in the region of the low current command can be improved, and no error occurs in the detection current in the current detection unit 5, and the semiconductor laser The laser power to be irradiated can be accurately irradiated.

  By the way, the semiconductor laser heating device according to the present embodiment provides an alarm when the output signal V4 of the adding means 13 exceeds a predetermined value or when the current detection signal VC that is the output signal of the current detection unit does not reach the predetermined value. An interlock operation for stopping the operation or the operation of the semiconductor laser 1 is provided, and abnormal irradiation of the laser light from the semiconductor laser 1 can be monitored. Further, it is possible to prevent an overcurrent flowing in the semiconductor laser 1 that is generated when the current detection signal VC output from the current detection unit 5 cannot be detected due to a failure of the current detection unit 5 or the like during irradiation of the semiconductor laser 1. The power supply to the laser 1 can be monitored. As a result, it is possible to prevent emission of laser light with an unstable output from the semiconductor laser heating device.

  In the semiconductor laser heating apparatus having the above configuration, each component is provided with a control element and controlled in each signal processing or each configuration. However, the semiconductor laser heating apparatus includes a CPU connected to each configuration. It is also possible to control each process centrally.

  FIG. 6 shows a block diagram of the laser beam machine in the embodiment of the present invention.

  The laser processing machine includes a processing table 63 on which a processing work 64 is placed, a driving unit 62 that moves at least one of a processing table 63 or a condensing unit 67 that condenses laser light, and numerical control that controls the driving unit 62. The unit 61, the semiconductor laser heating device 65 described above, and the optical fiber 66 are included.

  The laser light emitted from the semiconductor laser heating device 65 is transmitted by the optical fiber 66 and condensed by the condensing means 67, and the processing workpiece 64 is irradiated with the laser light 68 to start processing. At the same time, a command is output to the drive means 62 by the numerical control means 61, and at least one of the machining table 63 or the light collecting means 67 is operated to heat the workpiece 64.

  According to the laser processing machine, when a power failure supplied to the semiconductor laser, a deterioration of the element of the semiconductor laser, a failure of the element, or the like occurs, or even when a power drop due to the aging of the semiconductor laser occurs, Laser beam irradiation that is more unstable than the semiconductor laser heating device can be prevented, accurate irradiation of the output power of the laser beam can be reproduced, and the semiconductor laser heating device is comprehensively controlled by the numerical control means, thereby ensuring the reliability of laser processing. As a result, it is possible to prevent defective products from being mixed into the workpiece.

  The semiconductor laser heating apparatus of the present invention can improve the power source utilization efficiency and the transient response in the low current region, and can realize the accurate irradiation reproducibility of the laser power, and the light output of the semiconductor laser. It is industrially useful for local heating using it.

Block diagram of a semiconductor laser heating apparatus in an embodiment of the present invention Constant voltage switching power supply configuration diagram of the semiconductor laser heating device in the same embodiment Circuit configuration diagram of power calculation means, comparison control means, and addition means of semiconductor laser heating apparatus in the same embodiment Relationship diagram of initial power command with respect to current command Circuit configuration diagram of delay means of semiconductor laser heating device in same embodiment Configuration diagram of laser beam machine in the embodiment Circuit diagram of a conventional semiconductor laser heating device Circuit diagram of another conventional semiconductor laser heating device Relationship diagram between injection power and drive current for semiconductor laser

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor laser 2 Optical fiber 3 Condensing means 4 Laser light 5 Current detection part 6 DC power supply 7 Irradiation command part 8 Feedback means 10 Delay means 11 Power calculation means 12 Comparison control means 13 Addition means 14 Switch means 15 Alarm means 18 Workpiece work 21 Primary rectifier diode 22 Primary smoothing capacitor 23 Switching control element 24 Transformer 25 Secondary rectifier diode 26 Secondary smoothing capacitor 27 Voltage detector 28 Comparison controller 29 Switch element

Claims (9)

At least one semiconductor laser connected in series, a DC power supply for supplying power to the semiconductor laser, a current detector for detecting a driving current of the semiconductor laser, and a current value corresponding to the irradiation power of the semiconductor laser A semiconductor laser heating apparatus, further comprising: an irradiation command unit that sets a current value in advance; and feedback means that feeds back an output voltage of the current detection unit to the DC power source based on a current setting value of the irradiation command unit. The feedback means includes a delay means for delaying the irradiation signal of the irradiation command section, a power calculation means for calculating power supplied to the semiconductor laser in accordance with an output signal of the delay means, an output signal of the delay means, and a current detector 2. The semiconductor laser heating apparatus according to claim 1, further comprising: comparison control means for comparing and controlling the output signal; and addition means for adding the output signal of the comparison control means and the output signal of the power calculation means. 3. The semiconductor laser heating apparatus according to claim 1, wherein the DC power supply is a constant voltage DC power supply that changes an output voltage in accordance with an output signal of the adding means. 4. The semiconductor laser heating apparatus according to claim 1, wherein the DC power supply is a constant voltage switching DC power supply that changes an output voltage by switching of a control element. 5. The semiconductor laser heating apparatus according to claim 1, wherein the DC power source is a constant voltage switching DC power source that irradiates and stops the output voltage by a laser irradiation signal and a stop signal of the irradiation command unit. 6. The alarm unit according to claim 1, further comprising an alarm unit that performs at least one of generation of an alarm and an interlock operation for stopping the operation of the semiconductor laser heating device main body when the output signal of the adding unit exceeds a predetermined value. The semiconductor laser heating apparatus described in 1. 7. An alarm unit for performing at least one of generation of an alarm and an interlock operation for stopping the operation of the semiconductor laser heating device main body when the output signal of the current detection unit does not reach a predetermined value. A semiconductor laser heating apparatus according to claim 1. The semiconductor laser heating apparatus according to claim 1, further comprising: an optical fiber that transmits a laser beam of the semiconductor laser; and a focusing unit that collects the laser beam and irradiates a workpiece. 2. A processing table on which a workpiece is placed, driving means for moving at least one of movement of the processing table and laser light condensing means, numerical control means for controlling the driving means, and laser light are generated. A laser processing machine comprising the semiconductor laser heating device according to any one of 1 to 8.

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