JP2005207480A - Vessel valve - Google Patents
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- JP2005207480A JP2005207480A JP2004013912A JP2004013912A JP2005207480A JP 2005207480 A JP2005207480 A JP 2005207480A JP 2004013912 A JP2004013912 A JP 2004013912A JP 2004013912 A JP2004013912 A JP 2004013912A JP 2005207480 A JP2005207480 A JP 2005207480A
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- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 85
- 239000011737 fluorine Substances 0.000 claims abstract description 85
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 89
- 239000000463 material Substances 0.000 claims description 31
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000003682 fluorination reaction Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 23
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- 229910052799 carbon Inorganic materials 0.000 abstract description 9
- 229910000990 Ni alloy Inorganic materials 0.000 abstract description 6
- 239000000615 nonconductor Substances 0.000 abstract description 5
- 238000005406 washing Methods 0.000 abstract 2
- 150000001721 carbon Chemical class 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 description 29
- 238000005260 corrosion Methods 0.000 description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
- 238000000034 method Methods 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005728 strengthening Methods 0.000 description 6
- 238000011049 filling Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000002222 fluorine compounds Chemical class 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 2
- 229910000792 Monel Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004881 precipitation hardening Methods 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 241000512259 Ascophyllum nodosum Species 0.000 description 1
- 229910021566 Chromium(V) fluoride Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical compound FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 1
- 229910021563 chromium fluoride Inorganic materials 0.000 description 1
- OMKYWARVLGERCK-UHFFFAOYSA-I chromium pentafluoride Chemical compound F[Cr](F)(F)(F)F OMKYWARVLGERCK-UHFFFAOYSA-I 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical group F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000000275 quality assurance Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical class F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Landscapes
- Lift Valve (AREA)
- Fluid-Driven Valves (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Valve Housings (AREA)
Abstract
Description
本発明は、半導体製造システムに、高濃度フッ素ガスを、高圧力で供給する容器弁に関する。 The present invention relates to a container valve that supplies a high concentration fluorine gas to a semiconductor manufacturing system at a high pressure.
液晶および半導体（以降半導体）製造工程で、チャンバーのクリーニングにフッ素系のガスが大量に使用されている。チャンバー内に堆積したアモルファスシリコン膜や
SiO2、Si304等の膜や粉体のシリコン系の反応副生成物を除去クリーニングするためにフロン系
CF4，C2F6，C3F8等が用いられている。また、NF3ガスをプラズマ分解し、活性な反応性に富むフッ素ラジカルを導入し、上記シリコン系の生成物と反応させ、SiF3を生成させ、このフッ化珪素の揮発性を利用して、反応チャンバーおよび配管内から真空ポンプにより吸引され系外に排気されクリーニングが完了する方法がとられている。この様に半導体製造工程に生成する副生成物を除去するための重要な役割もフッ素は担っている。
In the liquid crystal and semiconductor (hereinafter referred to as semiconductor) manufacturing process, a large amount of fluorine-based gas is used for cleaning the chamber. Amorphous silicon film deposited in the chamber
Freon in order to remove cleaning SiO 2, Si 3 0 reaction byproducts silicon-based film or powder, such as 4
CF 4 , C 2 F 6 , C 3 F 8 and the like are used. In addition, plasma decomposition of NF 3 gas, introduction of active reactive fluorine radicals, reaction with the above silicon-based products, generation of SiF 3 , utilizing the volatility of this silicon fluoride, A method is employed in which the cleaning is completed by suctioning from the reaction chamber and piping by a vacuum pump and exhausting the system. Thus, fluorine also plays an important role for removing by-products generated in the semiconductor manufacturing process.
フッ素はボンベに充填されて容器弁により密閉されて半導体業界に供給され、ボンベから容器弁を介して半導体製造工程に送給される。フッ素は有毒でかつ腐食性ガスなので、フッ素充填ボンベに使用される容器弁については、１）構造的には、毒性のあるフッ素ガスが漏洩しない安全構造があること２）容器弁を構成する材料は、フッ素に対する耐食性に優れていること、および３）バルブ機能として可能な限りＳＶ値が大である事、が必須である。容器弁を構成する部品はフッ素ガスに対して良好な耐腐食性をもつニッケルおよびモネル等のニッケル合金、真鍮等の銅合金で構成され、シート材はすべてメタルシール構造となっている。油等の有機物はフッ素ガスで猛烈に酸化され燃焼、火災を誘発させる危険性があるので、構成部品には十分な脱脂処理が施されている。 Fluorine is filled in a cylinder, sealed by a container valve, supplied to the semiconductor industry, and supplied from the cylinder to the semiconductor manufacturing process through the container valve. Fluorine is a toxic and corrosive gas, so the container valve used in fluorine-filled cylinders is 1) structurally safe to prevent toxic fluorine gas from leaking 2) materials that make up the container valve It is essential that the material has excellent corrosion resistance to fluorine and that 3) the SV value is as large as possible as a valve function. Parts constituting the container valve are made of nickel alloy such as nickel and monel having good corrosion resistance against fluorine gas, and copper alloy such as brass, and all the sheet materials have a metal seal structure. Since organic substances such as oil are violently oxidized by fluorine gas and there is a risk of causing combustion and fire, the components are sufficiently degreased.
窒素ガスやアルゴンガスで希釈したフッ素濃度30％以下、充填圧力20kg／cm2程度のフッ素ガスが、国内メーカーで製造販売されているおり、容器弁については、この濃度、圧力に対する作動が実績保証された容器弁は既に市販されている。 Fluorine gas diluted with nitrogen gas or argon gas with a fluorine concentration of 30% or less and a filling pressure of about 20 kg / cm 2 is manufactured and sold by a domestic manufacturer. These container valves are already commercially available.
高濃度フッ素ガスを用いることにより、上記の工程内洗浄がさらに効率的に行えることから、近年、国内では、濃度、100％フッ素、充填圧力、28kg／cm2の充填品を、米国では濃度、100％フッ素ガス、充填圧力、140kg／cm2の充填品を製造したとの報告がある。しかし、この様な高濃度、高圧力でフッ素が充填されたボンベに適した容器弁についてはその詳細は報告されていない。 By using high-concentration fluorine gas, the above in-process cleaning can be performed more efficiently. In recent years, in Japan, a packed product with a concentration of 100% fluorine, a filling pressure of 28 kg / cm 2 , a concentration in the United States, There is a report that a 100% fluorine gas, filling pressure, 140 kg / cm 2 filling product was manufactured. However, details of such a container valve suitable for a cylinder filled with fluorine at a high concentration and high pressure have not been reported.
今後、半導体製造工程チャンバー内洗浄用のフッ素ガスは、高濃度でかつ高圧で充填供給される趨勢にあり、それに適した容器弁の開発が急務となってきている。
フロン系ガスは地球温暖化ガスであり、今後この使用量を益々削減する必要がある。本来はフッ素ガス100％での使用による半導体製造工程の洗浄方式が性能効率から望ましかったが、高濃度のフッ素ガスを使用するに際しての毒性および安全性の観点から使用されていなかった。特に高濃度フッ素を高圧充填したボンベ用容器弁に関しては、フッ素に対する耐腐食性能をもつ構成材料の検証、および、漏洩のない安全性を確認した構造を実証して十分な保証されるものが開発されていなかった事も実用遅延の大きな原因の一つとされている。 Fluorocarbon gas is a global warming gas, and it is necessary to further reduce the amount of use in the future. Originally, a cleaning method of a semiconductor manufacturing process using 100% fluorine gas was desired from the viewpoint of performance efficiency, but it was not used from the viewpoint of toxicity and safety when using a high concentration fluorine gas. In particular, for container valves for cylinders filled with high-concentration fluorine at high pressure, the development of materials that are sufficiently guaranteed by verifying the construction materials with corrosion resistance against fluorine and demonstrating the safety without leakage What was not done is considered to be one of the major causes of practical delay.
半導体業界の苛酷な競業体質は飽くなき製造原価低減を指向しており、地球環境の保全確保を前提に、高純度高圧フッ素ガスによる高能率な製造工程の洗浄が汎用化されるのはもはや時間の問題と言える。 The severe competitive structure of the semiconductor industry is tirelessly aimed at reducing manufacturing costs, and on the premise of ensuring the preservation of the global environment, cleaning of highly efficient manufacturing processes with high-purity high-pressure fluorine gas is no longer universal. It can be said that it is a matter of time.
本発明では、このような趨勢に鑑み、高純度高圧フッ素ガスを高純度に保ち、安全に、かつ、大量に充填できるボンベ用の容器弁を新規に提供することを目的とする。 In view of such a trend, an object of the present invention is to newly provide a container valve for a cylinder that can keep high purity high-pressure fluorine gas in high purity, and can be filled safely and in large quantities.
機能および品質保証上、半導体製造工程で用いられるすべての半導体製造用ガスは、金属成分まで含めた全ての不純物が超高純度（ppbレベル）で管理され、工程部材洗浄用に用いられるフッ素に対しても同様に厳しい品質管理が適用される。この厳しい品質管理基準を保証しさらに安全性と機能を兼ね備えた容器弁の開発が必要となる。この為には次の１）〜３）を満足させる条件を見出すことが必須である。
１）容器弁の構造は、安全および機能両面から高濃度・高圧フッ素ガス用として最適設計されていること。
２）材質は高濃度フッ素ガスに対して不動態であるとともに、とくにダイヤフラム等バネ性を要する部材は、充分なフッ素ガス耐食性を有するとともに弾性係数が15×103kg／mm2以上25×103kg／mm2以下であることが必須である。
３）効率の良い洗浄作業を行なう為には、高Ｃｖ値が達成できる容器弁構成である事が必要である。
For function and quality assurance, all semiconductor manufacturing gases used in the semiconductor manufacturing process are managed with ultra-high purity (ppb level) of all impurities including metal components. However, strict quality control is applied as well. It is necessary to develop a container valve that guarantees this strict quality control standard and has both safety and function. For this purpose, it is essential to find conditions that satisfy the following 1) to 3).
1) The container valve structure must be optimally designed for high-concentration and high-pressure fluorine gas in terms of both safety and function.
2) The material is passive with respect to high-concentration fluorine gas. In particular, members that require spring properties such as diaphragms have sufficient fluorine gas corrosion resistance and an elastic modulus of 15 × 10 3 kg / mm 2 or more and 25 × 10 It is essential that it is 3 kg / mm 2 or less.
3) In order to perform an efficient cleaning operation, it is necessary to have a container valve configuration that can achieve a high Cv value.
１）設計面からの検討
高濃度フッ素ガスが漏洩しない為の十分な安全性を確保する方法として、弁シート部の形状設計を重点的に検討し、100％フッ素ガスを最大圧力150kg／cm2で充填したボンベに装着し、高Ｃｖ値で確保される流量を正確にかつ安全に取り出すことのできる機能を有する容器弁を発明した。
1) Design considerations As a method of ensuring sufficient safety to prevent high-concentration fluorine gas from leaking, the shape design of the valve seat is studied with emphasis on 100% fluorine gas at a maximum pressure of 150 kg / cm 2. Invented a container valve having a function that can be mounted on a cylinder filled with the above and can accurately and safely take out a flow rate secured at a high Cv value.
弁シート部を、ケレップ側シール部に於いて、弁本体側と接触するシール面の接触直径を弁本体のガス流入口直径より大とする。さらにシール面の接触直径内に円形の窪みを設けた形状で構成する事が設計の骨子である。 In the valve seat portion, the contact diameter of the seal surface that contacts the valve body is larger than the gas inlet diameter of the valve body. Furthermore, it is the essence of the design to form a shape in which a circular depression is provided in the contact diameter of the sealing surface.
また、この構造を見出したことにより、より小さい推力で気密性を得ることが可能となったので、空気圧による自動開閉操作機構、アクチュエーターの搭載により自動開閉ができることとなった。遠隔自動操作は、本容器弁の使用する作業者の手動による開閉操作時の安全性に対する不安感を払拭でき、また、万一の被災が回避きる。 In addition, by finding this structure, it became possible to obtain airtightness with a smaller thrust, and therefore automatic opening / closing was possible by mounting an automatic opening / closing operation mechanism and actuator by pneumatic pressure. Remote automatic operation can eliminate the fear of safety during the manual opening and closing operation of the operator who uses this container valve, and it is possible to avoid a disaster.
２）材質面からの検討
フッ素ガスはきわめて反応性が高く、ダイフロン等のフッ素樹脂でさえも、容易に分解してしまうので、本用途には樹脂系の材料は全く使用できず、専ら金属材料で最適材料を選定する事が必要である。
2) Examination from the material aspect Since fluorine gas is extremely reactive and even fluororesins such as Daiflon are easily decomposed, resin-based materials cannot be used for this purpose at all, and they are exclusively metal materials. It is necessary to select the optimum material.
真鍮等の銅合金は、フッ素ガスに対する耐食性があり、フッ素電解設備等では使用実績がある材料であるが、フッ素ガスと反応した際に生成されるフッ化銅がフッ素ガス混入にし、銅汚染の危険性があることから本用途には採用できない。同様にニッケルー銅合金のモネル（ニッケル／銅合金）、銅フッ化物汚染による、フッ素ガスの純度の劣化の危険性があるため採用できないことがわかった。 Copper alloys such as brass are materials that have corrosion resistance to fluorine gas and have been used in fluorine electrolysis equipment, etc., but the copper fluoride produced when reacting with fluorine gas is mixed with fluorine gas, causing copper contamination. Due to the danger, it cannot be used in this application. Similarly, it was found that nickel-copper alloy monel (nickel / copper alloy) and copper fluoride contamination could cause deterioration of the purity of fluorine gas, which could not be adopted.
容器弁の機能上で最も重要な、ダイヤフラム弁を構成する、接ガスダイヤフラム、ケレップを上下に押すスプリングは、当然、フッ素ガスに対する耐食性が必須であるとともに、かつ、所定の弾性係数が必要である。しかし、通常容器弁に使われているSUS316Lの弾性係数は19×103kg／mm2で作動は十分であるが、フッ素ガスに対して耐食性がないため使用できない。 The gas valve diaphragm, the spring that pushes the kelp up and down, which constitutes the diaphragm valve, which is the most important for the function of the container valve, naturally requires corrosion resistance against fluorine gas and requires a predetermined elastic modulus. . However, the elastic modulus of SUS316L usually used for container valves is 19 × 10 3 kg / mm 2 , and the operation is sufficient, but it cannot be used because it has no corrosion resistance against fluorine gas.
同用途用に形状記憶合金（ニッケルーチタン）を新規に検討したが、合金組成の主要成分であるチタンがフッ素と反応して低沸点のフッ化チタンが生成して揮発するため耐食性がないことがわかった。 A new shape memory alloy (nickel-titanium) was examined for the same application, but titanium, which is the main component of the alloy composition, reacts with fluorine to produce low-boiling titanium fluoride that volatilizes and has no corrosion resistance. I understood.
最強の耐食合金であるニッケルーコバルト合金は、コバルト、ニッケル、クロムの含有量の違いにより縦弾性係数が21〜22×103kg／mm2から22〜23×103kg／mm2変化する。フッ素ガスでの高温暴露試験により、C≦0.05%,Co＝30〜45％、Ni＝10〜20％、Cr＝8〜15％の低クロム含有のニッケルーコバルト合金がフッ素ガスに対して耐食性に優れることがわかった。 Nickel-cobalt alloy, which is the strongest corrosion-resistant alloy, has a modulus of longitudinal elasticity varying from 21-22 × 10 3 kg / mm 2 to 22-23 × 10 3 kg / mm 2 depending on the content of cobalt, nickel, and chromium. . Low-chromium nickel-cobalt alloy with C ≤ 0.05%, Co = 30 to 45%, Ni = 10 to 20%, Cr = 8 to 15%, and corrosion resistance to fluorine gas. It was found to be excellent.
合金組成中のクロムとフッ素との反応で生成する高次のフッ化クロム（CrF4 沸点400℃、沸点 400℃、：CrF5 融点30℃、昇華）を生成しにくくするためにはクロム成分は必要最小限にとどめることが有効な手段であることがわかった。 Chromium component is necessary to make it difficult to produce higher-order chromium fluoride (CrF 4 boiling point 400 ° C, boiling point 400 ° C: CrF5 melting point 30 ° C, sublimation) generated by the reaction of chromium and fluorine in the alloy composition. It has been found that minimizing is an effective means.
これらの材料特性を鋭意検討して、ガスに接触する接ガスダイヤフラムとして、C ; 0.10% 以下, Ni ; 30% 以上, Co ; 0.1〜40％, Cr ;
0.1〜25%, Mo ; 0.1〜12%, にTi, Nb, Ta および Al の１種以上を総量で 0.01〜5% 以下を主成分とする合金を、容器弁本体は炭素含有量が0.05％以下、ニッケル９５％以上を主成分とする合金を選定した。
As a gas-contacting diaphragm that comes into contact with the gas, the material properties of these materials were investigated carefully. C; 0.10% or less, Ni; 30% or more, Co; 0.1 to 40%, Cr;
0.1 to 25%, Mo; 0.1 to 12%, and an alloy containing at least one of Ti, Nb, Ta and Al as a main component, with a total content of 0.01 to 5% or less, and the container valve body has a carbon content of 0.05% Hereinafter, an alloy mainly containing nickel of 95% or more was selected.
本発明の容器弁構造で、弁シート部を構成するケレップ構造に大きな新規性がある。ケレップ構造については実施例で詳述するが、この構造は材質と熱処理と構成方式についての詳細な検討により達成できた。 In the container valve structure of the present invention, there is a great novelty in the Kelep structure constituting the valve seat portion. The Kellep structure will be described in detail in the examples, and this structure can be achieved by a detailed examination of the material, heat treatment, and construction method.
本容器弁の耐食性の観点からさらなる安全性を付与するためのさらなる検討を行った、ボンベに装着しフッ素ガスを使用するに先立ち、本容器弁のガスと接触する内部（接ガス部）をあらかじめフッ素化不動態処理を行うことを検討した。 Prior to the use of fluorine gas in a cylinder, the inside (gas contact part) that comes into contact with the gas of this container valve was examined in advance to give further safety from the viewpoint of the corrosion resistance of this container valve. Fluorination passivation treatment was investigated.
ここでいうフッ素不動態処理とはフッ素ガスを導入して材料の表面にフッ素化合物をあらかじめ生成させる処理のことである。フッ素化処理により材料の最表層に薄いフッ素化合物の皮膜が形成される。材料の種類により形成されるフッ素化合物の種類が異なる。特に、Niのフッ素化合物皮膜は極めて薄く、かつ緻密であり、このような強い皮膜が一旦形成されると、その後に高濃度フッ素雰囲気に晒されても、材料はフッ素に全く反応しない。 The fluorine passivation treatment here refers to a treatment in which fluorine gas is introduced to previously produce a fluorine compound on the surface of the material. A thin fluorine compound film is formed on the outermost layer of the material by the fluorination treatment. The type of fluorine compound formed varies depending on the type of material. In particular, the fluorine compound film of Ni is extremely thin and dense, and once such a strong film is formed, the material does not react to fluorine at all even if it is exposed to a high concentration fluorine atmosphere.
本発明の容器弁はこの不動態化処理を行うのに効果的な材料としてNiおよびNi合金を選び、予めフッ化不動態処理を施すことを特徴としている。なお、Ｎｉ合金と同様な効果を得る別の方法として、無電解Ｎｉ鍍金法を見いだしている。 The container valve of the present invention is characterized in that Ni and a Ni alloy are selected as effective materials for performing the passivation treatment, and the fluoride passivation treatment is performed in advance. As another method for obtaining the same effect as that of the Ni alloy, an electroless Ni plating method has been found.
本発明の容器弁を用いることにより、高純度フッ素ガスを半導体製造工程内に、安全に供給できるようになり、これに伴い効率のよい洗浄が可能となり、半導体生産性の大幅な向上が期待できる。半導体製造業界に対する貢献度は計り知れないものがある。 By using the container valve of the present invention, it becomes possible to safely supply high-purity fluorine gas into the semiconductor manufacturing process, and as a result, efficient cleaning becomes possible, and a significant improvement in semiconductor productivity can be expected. . The contribution to the semiconductor manufacturing industry is immeasurable.
半導体業界の過剰供給体制は緩和されたものの、弛まない競争力強化はこの業界の宿命である。この意味から、洗浄工程の効率化は同業界の達成すべき大きなテーマである。そのためには、本発明の容器弁にとっての前工程とも言うべき高純度フッ素ガス製造技術と後工程とも言うべき半導体製造工程とをシステムとして強い連携の下に本テーマを推進していくのが最良の形態である。 Although the semiconductor industry's oversupply system has been relaxed, it is the fate of this industry to continue to strengthen its competitiveness. In this sense, the efficiency of the cleaning process is a major theme to be achieved by the industry. For this purpose, it is best to promote this theme under strong cooperation between the high purity fluorine gas production technology that should be called the pre-process for the container valve of the present invention and the semiconductor production process that should be called the post-process. It is a form.
本発明の容器弁設計のコンセプトについて説明する。
本発明の形状設計の新規性は弁シート部を構成するケロップ側のシール形状にある。（図１）〜（図２）により詳説明する。（図１）に示す様に、一般高圧ガス用容器弁では、ケロップ側から45°の角度を有する紡錘状突起部が、バルブ本体側のガス流入孔端部とでシール部を構成するのが一般的である。
The concept of the container valve design of the present invention will be described.
The novelness of the shape design of the present invention lies in the seal shape on the kerop side constituting the valve seat portion. This will be described in detail with reference to FIGS. As shown in FIG. 1, in a general high-pressure gas container valve, a spindle-shaped protrusion having an angle of 45 ° from the kerop side constitutes a seal portion with the gas inlet hole end on the valve body side. It is common.
これに対して、本発明では（図２）ａ）に示す構造で、ケロップを構成する。ケロップのシール部（今後シートディスクと呼称）は、ケロップ本体とは別部品として構成するのが、本発明実施の為には好ましい。その理由は後述する。 On the other hand, in the present invention, a kerop is configured with the structure shown in FIG. It is preferable for the implementation of the present invention that the seal portion of the kerop (hereinafter referred to as a sheet disk) is constructed as a separate component from the kerop body. The reason will be described later.
（図２）ｂ）にシートディスクの形状を示した。シール面は弁本体と接触円としてシール部を構成する最重要部分である。シール部を構成する接触円の直径（ｄ）は弁本体のガス流入孔（Ｄ）より大である事が本発明の特徴である。（図１）の本発明の容器弁図に、シートディスクとバルブ本体とのシール部構成状況を示した。 (FIG. 2) b) shows the shape of the sheet disk. The seal surface is the most important part constituting the seal portion as a contact circle with the valve body. It is a feature of the present invention that the diameter (d) of the contact circle constituting the seal portion is larger than the gas inflow hole (D) of the valve body. The container valve diagram of the present invention (FIG. 1) shows the configuration of the seal portion between the seat disk and the valve body.
本発明に基づいて製作した容器弁を用い、本発明の検証を行った。以下に、その詳細を説明する。 The container valve manufactured according to the present invention was used to verify the present invention. The details will be described below.
シートディスク部の形状は（図２）のｂ）で、接触円の直径（ｄ）＝５±０．０５mm、窪み部の深さ（ｔ）＝０．４＋０．１−０mm、シール部（７）Ｒ＝０．２mm（０．８Ｓ），シール部角度（θ）＝６０°，これとシール部を構成する弁本体のガス流入孔の直径（Ｄ）＝４mm とした。 The shape of the seat disk part is (b) in FIG. 2, the diameter of the contact circle (d) = 5 ± 0.05 mm, the depth of the hollow part (t) = 0.4 + 0.1-0 mm, the seal part (7 ) R = 0.2 mm (0.8 S), seal portion angle (θ) = 60 °, and the diameter (D) of the gas inflow hole of the valve body constituting the seal portion is 4 mm.
シートディスクはシール部の機密性確保を目的にケレップ本体とは別構成とした。勿論、ケレップと一体構成とする事例も本発明に包含される事は言うまでもない。 The seat disc has a different structure from the main body of Kelep for the purpose of ensuring the confidentiality of the seal part. Of course, it is needless to say that the present invention also includes an example in which the structure is integrated with Kellep.
耐フッ素ガス耐食性の確保とシール性確保を目的に、炭素＝0.02%, ニッケル＝99.5%のNICKEL201を用いた。焼鈍によりＨＶ硬さを８０〜１００に調整し、ケレップ本体に焼嵌により嵌合一体化した。以下に本発明の容器弁としての機能特性について説明する。 NICKEL201 with carbon = 0.02% and nickel = 99.5% was used to ensure fluorine gas corrosion resistance and sealability. The HV hardness was adjusted to 80 to 100 by annealing, and the fitting was integrated with the Kelep body by quenching. The functional characteristics of the container valve according to the present invention will be described below.
（１）Ｃｖ値：
容器弁の特性で、機能評価に繋がる機能特性はＳＶ値である。半導体製造装置の洗浄を効率よく実施するには、瞬間的に大量のフッ素ガスを流入させる機能を有する事が必須である。本発明はこの点に焦点を絞って設計した。
なお、Ｃｖ値は（数１）により計算により求めた。
(1) Cv value:
The characteristic of the container valve that leads to functional evaluation is the SV value. In order to efficiently clean the semiconductor manufacturing apparatus, it is essential to have a function of allowing a large amount of fluorine gas to flow in instantaneously. The present invention was designed with a focus on this point.
The Cv value was calculated by (Equation 1).
(表１)に本発明の容器弁のＣｖ値を、同一条件で測定した従来の容器弁のＳＶ値と比較して示した。 Table 1 shows the Cv value of the container valve of the present invention compared with the SV value of a conventional container valve measured under the same conditions.
本発明の容器弁１〜５のＣｖ値はいずれも従来の容器弁のそれのおおよそ１．５倍に到達している。このＣｖ値は、容器弁の業界では画期的な値である。特に、本発明の目的とする半導体業界において、製造装置の洗浄工程の効率化に大きく貢献すると期待できる。また併せて、本発明の対象以外のあらゆる容器弁においても、本発明は有効に活用できる事は言うまでもない。 The Cv values of the container valves 1 to 5 of the present invention all reach approximately 1.5 times that of the conventional container valve. This Cv value is an epoch-making value in the container valve industry. In particular, in the semiconductor industry which is the object of the present invention, it can be expected to greatly contribute to the efficiency of the cleaning process of the manufacturing apparatus. In addition, it goes without saying that the present invention can be effectively used in any container valve other than the subject of the present invention.
（２）シートの開閉耐久性：
本設計のコンセプトに基づいて容器弁の耐久性について評価し結果を（表２）に示した。
(2) Seat opening and closing durability:
The durability of the container valve was evaluated based on the concept of this design, and the results are shown in Table 2.
本発明の容器弁の耐久性は、同一条件で測定した従来の容器弁を遙かに凌いでいる。この事は、本発明の設計のコンセプトは、Ｃｖ値が良好であるばかりでなく、耐久性の点でも優れた容器弁を提供できる優れたものである事が検証できた。なお、アクチュエータ最小作動圧力は、従来容器弁の 0.4 MPa に対して、本発明の容器弁は0.38〜0.43 MPa でほぼ同等であった。 The durability of the container valve of the present invention far exceeds the conventional container valve measured under the same conditions. This proves that the design concept of the present invention is not only excellent in Cv value but also excellent in providing a container valve that is excellent in terms of durability. The minimum operating pressure of the actuator was about 0.38 to 0.43 MPa for the container valve of the present invention, compared to 0.4 MPa for the conventional container valve.
本発明の容器弁はバルブとしての機能に併せて、フッ素ガスに対する耐食性とスプリング特性が重要である。各種の予備調査を行ない耐食性とスプリング特性から材料を選定した。結果を（表３）に示した。 In the container valve of the present invention, corrosion resistance against fluorine gas and spring characteristics are important in addition to the function as a valve. Various preliminary investigations were conducted, and materials were selected based on corrosion resistance and spring characteristics. The results are shown in (Table 3).
＃１〜２は容器弁本体を構成する材料である。フッ素に対する耐食性は高ニッケル材で、しかも低炭素形の最良が良好である。一方、容器弁のスプリング用途は、耐フッ素耐食性に加えてスプリング特性としての縦弾性係数が重要である。この観点から、＃３〜５の材料が本発明の容器弁のスプリング用に適している。 # 1 and # 2 are materials constituting the container valve body. Corrosion resistance to fluorine is a high nickel material, and the best is a low carbon type. On the other hand, in addition to fluorine corrosion resistance, the longitudinal elastic modulus as a spring characteristic is important for container valve spring applications. From this viewpoint, materials # 3 to 5 are suitable for the spring of the container valve of the present invention.
これらの合金のフッ素ガスに対する耐食性を、流動するフッ素ガス環境で調査した。 The corrosion resistance of these alloys to fluorine gas was investigated in a flowing fluorine gas environment.
結果を（表４）に示した。テストプレートとして、30mmx60mmx1mm厚さの試片を用い、流動する２０％フッ素ガス（８０％窒素ガス）中で、試験温度は、２５および３００℃で、試験時間は３、１０および２４時間で行った。得られた腐食減量を腐食速度に換算して表示した。 The results are shown in (Table 4). A test piece having a thickness of 30 mm × 60 mm × 1 mm was used as a test plate, and the test temperature was 25 and 300 ° C. and the test time was 3, 10 and 24 hours in flowing 20% fluorine gas (80% nitrogen gas). . The obtained weight loss was converted into a corrosion rate and displayed.
純ニッケルで、炭素含有量が腐食速度に影響を及ぼす事が認められる。流動するフッ素ガスにより、金属の最表層には不動態膜が形成される。この不動態膜の緻密さと耐食特性がその後の腐食特性に大きく影響を及ぼす。炭素含有量が大の場合には、形成された不動態膜が脆弱であると推測される。 With pure nickel, the carbon content is observed to affect the corrosion rate. A passive film is formed on the outermost layer of the metal by the flowing fluorine gas. The denseness and corrosion resistance of the passive film greatly affect the subsequent corrosion characteristics. When the carbon content is large, the formed passive film is presumed to be fragile.
合金中の金属成分がニッケルの場合には、形成される不動態膜はニッケルフッ化物であり、いずれのニッケル合金の場合も、炭素含有量が小であることが、フッ素ガス耐食性に優れている事を見出した。本発明における材質選定の基本である。 When the metal component in the alloy is nickel, the formed passive film is nickel fluoride, and in any nickel alloy, a small carbon content is excellent in fluorine gas corrosion resistance. I found a thing. This is the basic material selection in the present invention.
＃３〜５は縦弾性係数が本発明の用途の容器弁のスプリングに適合する合金である。いずれも炭素含有量が小であり、優れた耐フッ素ガス耐食性を示している。 # 3 to 5 are alloys whose longitudinal elastic modulus is compatible with the spring of the container valve used in the present invention. In any case, the carbon content is low, and excellent fluorine gas corrosion resistance is exhibited.
ここで対象となる材料は、耐フッ素耐食性の観点から材料はニッケルを主要組成としたオーステナイト系である。本発明の容器弁のダイヤフラム、スプリングで必須特性は良好な縦弾性係数を有する事である。縦弾性係数を向上させる為のオーステナイト系材料における方策は、固溶体化強化と析出硬化による強化である。 The material used here is an austenitic material mainly composed of nickel from the viewpoint of fluorine corrosion resistance. The essential characteristic of the diaphragm and spring of the container valve of the present invention is that it has a good longitudinal elastic modulus. Measures in austenitic materials for improving the longitudinal elastic modulus are strengthening by solid solution strengthening and precipitation hardening.
（表５）における＃３〜５は、固溶体強化と析出強化とを組み合わせる方法により、本特許の容器弁が目的とする機能を発揮するよう、最適な縦弾性係数を発揮する様の材料設計したものである。良好な耐フッ素耐食性と良好な縦弾性係数を兼ね備えており、本特許の重要構成要素である。 # 3 to 5 in (Table 5) were designed by a method combining a solid solution strengthening and a precipitation strengthening so as to exhibit an optimum longitudinal elastic modulus so that the container valve of this patent exhibits the intended function. Is. It combines good fluorine corrosion resistance and good longitudinal elastic modulus, and is an important component of this patent.
＃３は 時効処理により、Ti＋Nb がAl と金属間化合物を形成し、生地のオーステナイトを強化させる。＃４はMoの生地への固溶体強化と析出硬化との複合効果を狙った。＃５は＃３と＃４の相乗効果を活用している。いずれも、フッ素ガスに対する耐食性を維持しつつ縦弾性係数が確保できている。 In # 3, Ti + Nb forms an intermetallic compound with Al by aging treatment, strengthening the austenite of the dough. # 4 aimed at the combined effect of solid solution strengthening and precipitation hardening on Mo fabric. # 5 uses the synergistic effect of # 3 and # 4. In either case, the longitudinal elastic modulus can be secured while maintaining the corrosion resistance against fluorine gas.
容器弁として完璧な耐フッ素耐食性を付与するに、実体状態で使用される際にフッ素に僅かでも晒される箇所を、予めフッ化不導体処理を施した。フッ素不動態処理の方法は、80℃、約500mmHgのフッ素ガスを用いて、フッ素ガスともはや反応しなくなるまで行った。さらに温度を上げ、フッ素ガス濃度を上げることにより不態化処理の時間は短縮できるのでこの条件には縛られない In order to give perfect fluorine corrosion resistance as a container valve, the portion exposed to even a slight amount of fluorine when used in a solid state was preliminarily treated with a non-fluorinated conductor. The fluorine passivation treatment was performed at 80 ° C. using about 500 mmHg of fluorine gas until it no longer reacted with the fluorine gas. Furthermore, the temperature of the inactivation treatment can be shortened by raising the temperature and the fluorine gas concentration.
結果を（表６）に示した。容器弁に組み立てる前に部品毎に、フッ素ガス不導体処理を先ず行う。フッ化不導体処理を施した各部品を組み立て本発明の容器弁のガス導入口から、フッ素ガスを、容器弁に導入し、放出口から放出する。この方法で容器弁内の空気をフッ素ガスで充分に置換して後に、上記に条件で十分なフッ化不導体処理を行う。場合によっては事前に行う部品毎のフッ化不導体処理は省略できる。 The results are shown in (Table 6). Before assembling the container valve, the fluorine gas non-conductor treatment is first performed for each part. The parts subjected to the fluorinated non-conductor treatment are assembled, and fluorine gas is introduced into the container valve from the gas inlet of the container valve of the present invention and released from the outlet. After sufficiently replacing the air in the container valve with fluorine gas by this method, a sufficient fluorinated non-conductor treatment is performed under the above conditions. In some cases, it is possible to omit the fluorinated non-conductor treatment for each component performed in advance.
この様にしてフッ素に触れる箇所を充分にフッ化不導体した、容器弁に、フッ素ガスを封入圧力８００Ｔｏｒｒで充填し２５℃で、１００時間放置後の内部圧力を測定した。 In this way, the portion that touched fluorine was sufficiently non-fluorinated, and the container valve was filled with fluorine gas at a filling pressure of 800 Torr, and the internal pressure after being left at 25 ° C. for 100 hours was measured.
＃１材と組み合わせた＃０１テストデータのみ圧力変化が認められる。＃１材は炭素含有量が大であるため、形成されたフッ化被膜に充分な耐フッ素耐食性がえられなかったためである。 Only the # 01 test data combined with the # 1 material shows a change in pressure. This is because the # 1 material has a large carbon content, so that sufficient fluoride corrosion resistance was not obtained for the formed fluoride film.
半導体製造業界は苛酷な競争原理の元で動いている。スクラップアンドビルトを繰り返しより高い生産性を追求し続けている。超過剰な設備投資が災いして今なお低迷の域を脱していない感があるものの、一部に底離れの気配が伺われる。今後に新設される半導体製造装置は、今までの装置に比べ遙かに生産性の高いシステムが組み込まれている事は言うまでもない。 The semiconductor manufacturing industry is operating under harsh competitive principles. We continue to pursue higher productivity through scrap and build. Although there is a feeling that super-excessive capital investment has not left the stagnation due to the disaster, there are some signs that it is far from the bottom. It goes without saying that semiconductor manufacturing equipment that will be newly installed will incorporate a much more productive system than conventional equipment.
この様な趨勢の中で、洗浄工程の効率化を目的に、純フッ素による洗浄が次世代半導体製造装置の必須工程とし大幅に採用されると予測される。その際、本発明の容器弁がそのプロセスに必須でかつ重要な役割を果たすとともに、本容器弁が同工業界の発展的展開に大きく貢献する。 Under such a trend, it is predicted that cleaning with pure fluorine will be adopted as an essential process of the next-generation semiconductor manufacturing apparatus for the purpose of improving the efficiency of the cleaning process. At that time, the container valve of the present invention plays an essential and important role in the process, and the container valve greatly contributes to the development of the industry.
１. ダイヤフラム
２. ケレップ
３. スプリング
４. バルブ本体
５. シートディスク
６. カシメ部
７. シール部
８． シール部の円形のくぼみ
９． シール部角度
1. Diaphragm
2. Kerep 3. Spring 4. Valve body 5. Seat disc 6. Caulking part 7. Sealing part 8. Circular recess in the seal part Seal part angle
Claims (7)
Ni ; 30% 以上, Co ; 0.1〜40％, Cr ; 0.1〜25%, Mo ; 0.1〜12%, にTi, Nb, Ta および
Al の１種以上を総量で 0.01〜5% 以下を主成分とし、その他不可避に含有される微量成分からなる合金で構成され、本容器弁内部でガスと接触する箇所を予めフッ素ガスによりフッ化不動態処理を施してあり、且つ、弁シート部の形状で、ケレップ側シール部に於いて、弁本体側と接触するシール面の接触直径を弁本体のガス流入口直径より大とするとともに、シール面の接触直径内に円形の窪みを設けた形状で構成することを特徴とするダイヤフラム型高圧ガス用容器弁。 The material of the gas contact diaphragm that contacts the gas is C; 0.10% or less,
Ni: 30% or more, Co: 0.1-40%, Cr: 0.1-25%, Mo: 0.1-12%, Ti, Nb, Ta and
Consists of an alloy composed of one or more types of Al with a total amount of 0.01 to 5% or less and other trace components that are inevitably contained, and the portion in contact with the gas inside this container valve is fluorinated with fluorine gas in advance. Passive treatment has been performed, and in the shape of the valve seat part, the contact diameter of the seal surface in contact with the valve main body side is made larger than the gas inlet diameter of the valve main body in the seal side. A diaphragm type high pressure gas container valve, characterized in that it is formed in a shape in which a circular depression is provided in the contact diameter of the sealing surface.
以上を主成分とし、その他不可避に含有される微量成分からなる合金,もしくは Ni
; 0.1〜20%, Cr ; 0.1〜20%, Mo ; 0.1〜5% を主成分とし、その他不可避に含有される微量成分からなる合金に純ニッケル鍍金した合金で構成され、本容器弁内部でガスと接触する箇所を予めフッ素ガスによりフッ化不動態化処理を施してあり、且つ、弁シート部を、ケレップ側シール部に於いて、弁本体側と接触するシール面の接触直径を弁本体のガス流入口直径より大とするとともに、シール面の接触直径内に円形の窪みを設けた形状で構成することを特徴とするダイヤフラム型高圧ガス用容器弁。 The container valve body of claim 1 is C; 0.10% or less, Ni: 95%
Alloys consisting of the above-mentioned main components and other unavoidable trace components, or Ni
0.1 to 20%, Cr; 0.1 to 20%, Mo; 0.1 to 5% as the main component, and an alloy consisting of trace components that are unavoidably contained, and pure nickel-plated alloy. Fluoride passivation treatment has been applied to the part that comes into contact with the gas in advance with fluorine gas, and the valve seat part has a contact diameter of the seal surface that comes into contact with the valve body side at the Kelep side seal part. A diaphragm type high-pressure gas container valve having a diameter larger than that of the gas inlet and having a circular recess in the contact diameter of the seal surface.
; 0.1 ％以下、Ni ; 95 ％以上を主成分とし、その他不可避に含有される微量成分からなる合金で構成し、弾性体であるスプリングは、C；0.10% 以下, Ni ; 30%
以上, Co ; 0.1〜40％, Cr ; 0.1〜25%, Mo ; 0.1〜12%, にTi, Nb, Ta およびAlの１種以上を総量で 0.01〜5% 以下を主成分とし、その他不可避に含有される微量成分からなる合金で構成され、且つ、弁シート部を、ケレップ側シール部に於いて、弁本体側と接触するシール面の接触直径を弁本体のガス流入口直径より大とするとともに、シール面の接触直径内に円形の窪みを設けた形状で構成することを特徴とするダイヤフラム型高圧ガス用容器弁。 In claim 1 and claim 2, the valve seat part and the seal part are all metal seal structures, and the Kelep of the parts in contact with the gas is C
0.1% or less, Ni; 95% or more as the main component, and an alloy consisting of trace components that are inevitably contained. The elastic spring is C: 0.10% or less, Ni: 30%
Co, 0.1 to 40%, Cr; 0.1 to 25%, Mo; 0.1 to 12%, and one or more of Ti, Nb, Ta, and Al, with a total amount of 0.01 to 5% or less, and other inevitable And the valve seat portion has a larger diameter than the gas inlet diameter of the valve body in the seal side of the valve seat portion. In addition, the diaphragm type high pressure gas container valve is configured to have a circular recess in the contact diameter of the seal surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004013912A JP2005207480A (en) | 2004-01-22 | 2004-01-22 | Vessel valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004013912A JP2005207480A (en) | 2004-01-22 | 2004-01-22 | Vessel valve |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2005207480A true JP2005207480A (en) | 2005-08-04 |
Family
ID=34899844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004013912A Pending JP2005207480A (en) | 2004-01-22 | 2004-01-22 | Vessel valve |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005207480A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008151270A (en) * | 2006-12-18 | 2008-07-03 | Kitz Sct:Kk | Metal diaphragm valve |
| WO2012046533A1 (en) | 2010-10-08 | 2012-04-12 | セントラル硝子株式会社 | Halogen-containing gas supply apparatus and halogen-containing gas supply method |
-
2004
- 2004-01-22 JP JP2004013912A patent/JP2005207480A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008151270A (en) * | 2006-12-18 | 2008-07-03 | Kitz Sct:Kk | Metal diaphragm valve |
| WO2012046533A1 (en) | 2010-10-08 | 2012-04-12 | セントラル硝子株式会社 | Halogen-containing gas supply apparatus and halogen-containing gas supply method |
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