JP2005205544A - Method of manufacturing grinding wheel, grinding wheel and polishing device having this grinding wheel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a grinding wheel manufacturing method and a polishing device capable of including a particle soluble in a polishing liquid in a grinding wheel in a microcapsule form, by completely covering with the practical covering thickness of a resin insoluble in the polishing liquid. <P>SOLUTION: A granulated material 18 of an abrasive grain composed of cerium oxide is used for the abrasive grain. An epoxy resin is used for a binder 11. A surface active agent dried and powdered in advance is used for a soluble particle (a solid particle) 12. An acrylic resin is used for resin stuck to the soluble particle 12. In process of sticking the acrylic resin to the surface active agent, the acrylic resin of 3.0 wt.% is stuck to the surface active agent by an air suspension method. These are mixed, and are heated, pressurized and molded, to provide the grinding wheel including the microcapsule 17 encapsulated with the soluble particle (the surface active agent) 12. A sign 15 indicates a pore formed between the binders 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a grindstone suitable for processing optical parts, machine parts, ceramics, metals, and the like, and in particular, a method for producing a grindstone for polishing a polishing object such as a semiconductor wafer in a flat and mirror-like shape, and the production thereof. The present invention relates to a grindstone manufactured by the method and a polishing apparatus equipped with the grindstone.

  In recent years, with the progress of high integration of semiconductor devices, circuit wiring has been miniaturized, and the dimensions of the integrated devices are being further miniaturized. Therefore, it is necessary to remove the film formed on the surface of the semiconductor wafer by polishing, and to flatten the surface. As a flattening method, the semiconductor wafer is polished by a chemical mechanical polishing (CMP) apparatus. Has been done. This type of chemical mechanical polishing apparatus has a turntable with a polishing cloth (polishing pad) and a top ring, and an object to be polished is interposed between the turntable and the top ring so that the top ring is constant. Both rotate while applying pressure to the turntable, and the surface of the object to be polished is polished flat and mirror-like while supplying a polishing liquid (slurry) to the polishing cloth.

  In chemical mechanical polishing using such a polishing liquid (slurry), a relatively soft polishing cloth is used, so that even after polishing, gentle unevenness due to the uneven pattern on the semiconductor wafer that exists before polishing is used. Remains, and it is difficult to obtain perfect flatness. Further, since polishing is performed while supplying a polishing solution containing a large amount of abrasive grains onto the polishing cloth, a large amount of polishing solution is required to maintain a sufficient polishing rate, which is not economical. In addition, since the polishing liquid is discharged from the chemical mechanical polishing apparatus as it is and becomes a large amount of waste, there is a concern about the burden on the environment.

In view of the situation of such a chemical mechanical polishing apparatus, as disclosed in Patent Document 1, so-called fixed abrasive grains in which abrasive grains such as cerium oxide (CeO ₂ ) are fixed using a binder such as phenol resin, for example. Polishing a semiconductor wafer using a polishing tool is performed. In polishing using such a fixed abrasive polishing tool, since the fixed abrasive polishing tool is hard unlike conventional chemical mechanical polishing, the uneven protrusion is preferentially polished, and the recess is difficult to polish, There is an advantage that absolute flatness can be easily obtained. Further, depending on the composition of the fixed abrasive polishing tool, a preferable phenomenon called a so-called self-stop function appears, in which the polishing rate is remarkably reduced when the projection of the convex portion is finished and becomes a flat surface, and the polishing does not substantially proceed. . Furthermore, since polishing using a fixed abrasive polishing tool does not use a polishing liquid containing a large amount of abrasive grains, the burden on the environment is reduced.

  Here, not only abrasive grains but also surfactants, anticorrosives (film forming agents), oxidizing agents, reducing agents, dispersing agents, buffering agents (pH adjusting agents), chelating agents (complexing agents), processing accelerators. Patent Document 2 discloses a fixed abrasive polishing tool in which additives such as a processing performance stabilizer, a mirror surface improver, a rust inhibitor, and an etching agent are fixed. These additives have been conventionally added to the polishing liquid and supplied to the polishing pad. By appropriately fixing such an additive inside the fixed abrasive polishing tool, the additive is directly supplied to the semiconductor wafer from the surface of the fixed abrasive polishing tool, so there is no waste and as a polishing liquid Chemical mechanical polishing corresponding to various objects to be polished can be performed only by supplying pure water.

  As a form for fixing the additive to the fixed abrasive polishing tool, a form in which the liquid additive is encapsulated and fixed to the fixed abrasive polishing tool, a form in which the solid additive is fixed to the fixed abrasive polishing tool as it is, A form in which a solid additive is encapsulated and fixed to a fixed abrasive polishing tool may be considered. The solid additive is encapsulated when the polishing solution such as pure water is supplied to the fixed abrasive polishing tool, and the solid additive inside the fixed abrasive polishing tool comes into contact with the polishing solution and dissolves. This is to prevent it from coming out.

  As a method for producing a grindstone containing solid particles soluble in the polishing liquid, Patent Document 3 discloses a step of producing a powder mixture of a grindstone and a synthetic resin, and encapsulating particles soluble in the polishing liquid in microcapsules. There is disclosed a method for manufacturing a grindstone comprising a step, a step of mixing the mixture powder and microcapsules, and a step of compression-molding and firing the mixture powder mixed with the microcapsules. According to the manufacturing method described in Patent Document 3, since the solid particles soluble in the polishing liquid (for example, solid additives) are completely sealed by the microcapsules, the polishing liquid penetrates into the grindstone during polishing. Even so, the solid particles are prevented from coming into contact with the polishing liquid, and the solid particles do not flow out of the grindstone.

JP 2003-11066 A JP 2001-105329 A JP-A-7-156068

  However, since the microcapsules described in Patent Document 3 are manufactured by a known method such as the Wurster method (air suspension coating method) or the spray drying method (spray drying coating method), the microcapsules are not dissolved in the polishing liquid. It was practically difficult to completely seal solid particles with a practical coating resin thickness. For example, in the air suspension coating method, since the resin is solidified on the surface of the solid particles by evaporating the solvent from the resin solution, the coating resin (film) becomes porous and the solid particles are completely sealed. Is very difficult. Actually, it was difficult to completely seal even if it was coated with an amount of resin of about 10 wt% of the encapsulated particles or more by the air suspension coating method. Further, if the coating thickness is increased in order to completely seal it, it is considered that the surface of the object to be polished is damaged during the polishing process, and that the adverse effect such as decreasing the polishing rate is caused.

  On the other hand, if the microcapsules are formed so that the coating thickness is reduced by the well-known method as described above, the solid particles (for example, solid additives) cannot be sufficiently coated, or the polishing liquid may not cover the microcapsules. The solid particles were dissolved in the polishing liquid before the microcapsules reached the polishing surface. For this reason, the component ratio of the additive on the polished surface is not as planned, and the surface finish of the object to be polished is not sufficient. Further, since the additive flows out before the microcapsules reach the polishing surface, voids are formed in the grindstone, leading to a decrease in strength of the grindstone.

  Here, examples of a method for microencapsulating a liquid material include a seamless encapsulation method using a concentric nozzle, an interfacial polymerization method, an in situ polymerization method, and a coacervation method. However, since these methods use an interfacial phenomenon, it is very difficult to microencapsulate a liquid material containing a component such as a surfactant that hardly forms an interface.

  The present invention has been made in view of the above-described circumstances, and particles that are soluble in a polishing liquid are completely covered with a resin that is insoluble in the polishing liquid with a thickness of a practical coating resin, and are in the form of a microcapsule. It aims at providing the manufacturing method of the grindstone which can be contained in a grindstone. Moreover, this invention aims at providing the grindstone manufactured by this manufacturing method, and also aims at providing the grinding | polishing apparatus provided with this grindstone.

  In order to achieve the above object, one embodiment of the present invention is a method for producing a grindstone containing a capsule encapsulating solid particles soluble in a polishing liquid, the surface of the solid particles being insoluble in the polishing liquid. Resin is adhered to form resin-adhesive soluble particles, and abrasive powder, a binder, and the resin-adhesive soluble particles are mixed to form a mixed powder, and the mixed powder is heated and pressed by heating and pressing. The capsule encapsulating the solid particles is formed at the time of molding.

  According to the present invention, the resin adhering to the surface of the soluble particles, or the resin and the binder cooperate to completely cover the surface of the solid particles to form microcapsules (capsules). In this way, a microcapsule in which solid particles such as an additive necessary for polishing an object to be polished in the heat and pressure molding process can be formed, and a grinding wheel for grinding and polishing containing the microcapsule ( Fixed abrasive) is obtained.

  The microcapsules produced in this way can sufficiently cover the surface of solid particles such as additives practically even if the thickness of the microcapsules is significantly reduced as compared with the microcapsules produced by using the prior art. Therefore, in the grindstone manufactured by the manufacturing method of the present invention, since the microcapsules are broken only after reaching the polishing surface, the component ratio of the additive can be obtained as planned on the polishing surface, so that ideal polishing can be performed. In addition, since the thickness of the microcapsule is sufficiently thin, there is a low possibility of giving a defect such as a scratch to the surface of the workpiece. Therefore, it is possible to perform polishing with a good finished state of the object to be polished and high yield. Furthermore, since the microcapsule does not break up to the polished surface, the mechanical strength of the grindstone can be maintained.

  Thus, according to the present invention, during the heat and pressure molding, both the resin and the binder, or one of them is softened or melted, and solid particles soluble in the polishing liquid, that is, soluble particles are encapsulated to form microcapsules. Therefore, it is possible to form a microcapsule in which soluble particles are sufficiently sealed practically even if the amount of resin is smaller than in the past. Therefore, it becomes possible to encapsulate the soluble particles in the microcapsule with the minimum necessary thickness. The microcapsules thus formed themselves are insoluble in the polishing liquid, have the minimum strength and thickness necessary to maintain the function and form of the microcapsules, and have practically sufficient soluble particles. Can be sealed.

  Furthermore, the grindstone produced by the production method of the present invention can have the characteristics conventionally required for a grindstone. That is, the microcapsules in which various additives are encapsulated are maintained in the form as they are until they reach the polishing surface, and when they reach the polishing surface, the additives are immediately released, and the microcapsule fragments are scratched on the surface of the object to be polished. The possibility of causing such defects is extremely low. In addition, since the microcapsules are not destroyed until they reach the polished surface, no voids are generated by the dissolution of particles in the grinding wheel, and the strength of the grinding wheel can be maintained. Can be used effectively. Therefore, the production method of the present invention is extremely useful in producing a grindstone. It should be noted that the binder for constituting the grindstone and the resin for constituting the microcapsule described here may be the same or different in composition.

  Preferred embodiments of the present invention include surfactants, anticorrosives, oxidizing agents, reducing agents, dispersants, buffers, chelating agents, processing accelerators, processing performance stabilizers, specularity improvers, rust inhibitors, and etching. Selecting at least one additive from among the agents, and when the selected additive is in a liquid state, the additive is dried and pulverized to form the solid particles. It is characterized in that it is performed as a pretreatment for forming.

  According to the present invention, even a liquid additive that is difficult to cover with microcapsules can be easily covered with microcapsules and fixed in a grindstone. In addition, since various additives can be used, it is easy to improve and characterize the performance and function of the grindstone.

  In a preferred embodiment of the present invention, the abrasive grains and the binder are mixed and granulated to form a granulated material in advance, and then the granulated material is mixed with the resin-adhering soluble particles to form the mixed powder. It is characterized by that.

  When the binder is in a liquid state, the abrasive grains and the binder are mixed in advance and granulated by, for example, a spray drying method to form a granulated product. Thereby, a granulated material and resin adhesion soluble particle can be mixed easily. In this case, if the size of the granulated product of the abrasive grains and the binder is significantly different from the size of the resin-adhesive soluble particles, problems such as cracks occur during heat and pressure molding. For this reason, for example, when the average particle diameter of the granulated product of the abrasive grains and the binder is 100, the average particle diameter of the resin-attached soluble particles is preferably about 10 to 1000, more preferably about 25 to 400. It is preferable to do. The abrasive grains and the binder are preferably mixed in advance and granulated. By doing in this way, when a grindstone is shape | molded, an abrasive grain is disperse | distributed uniformly in a grindstone, and favorable grinding | polishing is attained.

  A preferred embodiment of the present invention is characterized in that after the abrasive grains are granulated to form a granulated material in advance, the granulated material is mixed with the binder and the resin-attached soluble particles to form the mixed powder. And

  When the binder is a solid powder, for example, after granulating the abrasive grains in advance by a spray drying method or the like to form a granulated product, the granulated product, the binder, and the resin-attached soluble particles are mixed and mixed powder and To do. At that time, if the size of the granulated product of the abrasive grains and the binder and the resin-adhesive soluble particles are extremely different from each other, problems such as cracking occur at the time of heat and pressure molding. For this reason, for example, when the average particle diameter of the granulated product of abrasive grains is set to 100, the average particle diameter of the binder and the resin-adhesive soluble particles is preferably about 10 to 1000, more preferably about 25 to 400. It is preferable.

  Another aspect of the present invention is a method for producing a grindstone having abrasive grains, a binder, and a capsule in which an additive is encapsulated, wherein a resin is attached to the surface of the additive, and the resin is attached. After the additive, abrasive grains, and a binder are mixed, the capsule in which the additive is enclosed is formed by heating and pressing.

  Another aspect of the present invention is a grindstone having abrasive grains, a binder, and a capsule in which solid particles soluble in a polishing liquid are enclosed, and a resin insoluble in the polishing liquid is attached to the surface of the solid particles. To form resin-adhesive soluble particles, mix the abrasive grains, the binder, and the resin-adhesive soluble particles to form a mixed powder, and heat and press mold the mixed powder by heating and pressing The grindstone is characterized in that the capsule encapsulating the solid particles is formed.

  In the grindstone of the present invention, since the microcapsules (capsules) are broken only after reaching the polished surface, the component ratio of additives as planned can be obtained on the polished surface, and ideal polishing can be performed. Further, since the thickness of the microcapsule is sufficiently thin, there is a low possibility of giving a defect such as a scratch to the object to be polished. Therefore, it is possible to perform polishing with a good finished state of the object to be polished and high yield. Furthermore, since the microcapsule does not break up to the polished surface, the mechanical strength of the grindstone can be maintained. Further, when the microcapsule reaches the polishing surface, the internal additive is eluted, and a recess is formed on the surface of the grindstone. The recess formed in this way acts as a chip pocket effective for preventing clogging of the grindstone and reducing polishing resistance.

  Another aspect of the present invention is a polishing apparatus comprising a top ring for holding an object to be polished and a polishing table having the grindstone.

  Since the polishing apparatus of the present invention includes the grindstone, a component ratio of additives as planned can be obtained on the polishing surface, and ideal polishing can be performed. Further, since the thickness of the microcapsule (capsule) is sufficiently thin, there is a low possibility of giving a defect such as a scratch to the object to be polished. Therefore, it is possible to perform polishing with a good finished state of the object to be polished and high yield. Furthermore, since the microcapsule does not break up to the polished surface, the mechanical strength of the grindstone can be maintained.

According to the present invention, solid particles soluble in a polishing liquid (that is, soluble particles) are sealed in a capsule at the time of heat and pressure molding so that the soluble particles can be sufficiently sealed practically and have an appropriate thickness, That is, it can be coated with a strong capsule. Therefore, the following effects can be obtained by encapsulating the additive as soluble particles in a capsule.
(1) Since the additive is continuously released in the amount and ratio as planned on the polishing surface, the additive (polishing aid) can be effectively used.
(2) Since the capsule is maintained without breaking up to the polished surface, the strength of the grindstone can be maintained.
(3) Since the thickness of the capsule can be minimized, defects such as scratches on the surface to be polished can be reduced.
(4) Even if the additive is liquid, it can be encapsulated by powder solidification. Therefore, since various additives can be contained in the grindstone, the performance and function of the grindstone can be easily improved and characterized.
(5) Even with the minimum amount of additive, the additive can be efficiently supplied to the polishing surface. As a result, the amount of waste can be reduced and the burden on the natural environment can be reduced.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing a method for manufacturing a grindstone according to an embodiment of the present invention.
As materials of the abrasive grains shown in FIG. 1, cerium oxide (CeO ₂ ), alumina (Al ₂ O ₃ ), silicon carbide (SiC), silicon oxide (SiO ₂ ), zirconia (ZrO), iron oxide (FeO, Fe ₃ O ₄ ), manganese oxide (MnO ₂ , Mn ₂ O ₃ ), magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), zinc oxide (ZnO), barium carbonate (BaCO ₃ ), diamond ( C), titanium oxide (TiO ₂ ) and the like are used. Moreover, the magnitude | size (diameter) of an abrasive grain is 0.1 micrometer-2 micrometers, for example. Moreover, in order to improve the moldability of the grindstone, the abrasive grains themselves may be granulated to 5 μm to 100 μm.

  As the binder material shown in FIG. 1, a thermosetting resin or a thermoplastic resin is used. Examples of the thermosetting resin include phenol (PF), urea (UF), melamine (MF), unsaturated polyester (UP), epoxy (EP), silicon (SI), and thermosetting polyurethane (PUR). . As the thermoplastic resin, polyvinyl chloride (PVC), polyethylene (PE), polypropylene (PP), polystyrene (PS), acrylonitrile butadiene styrene (ABS), acrylonitrile styrene (AS), butanediene, which are known as general-purpose plastics, are used. Styrene / methyl methacrylate (MBS), polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinylidene chloride (PVDC), polycarbonate (PC), polyethylene terephthalate (PET), polyamide (PA), known as general-purpose engineering plastics ), Polyacetal (POM), polyphenylene ether (PPE (modified PPO)), polybutylene terephthalate (PBT), ultrahigh molecular weight polyethylene (UHMW-) E), polyvinylidene fluoride (PVDF), polysulfone (PSU) known as super engineering plastic, polyethersulfone (PES), polyphenylene sulfide (PPS), polyarylate (PAR), polyamideimide (PAI), polyetherimide (PEI), polyetheretherketone (PEEK), thermoplastic polyimide (PI), liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE), polystyrene methacrylic resin, polycarbonate cellulose acetate, polychlorotrifluoroethylene (PCTFE, (Trifluorinated ethylene resin), polyvinylidene fluoride (PVDF), polyester resin, diallyl phthalate (PDAP), and the like.

  The resin-attached soluble particles are obtained by attaching a resin insoluble in the polishing liquid to the surface of solid particles soluble in the polishing liquid (hereinafter referred to as soluble particles). That is, the resin-attached soluble particles are those in which the resin is only attached to the surface of the soluble particles and the soluble particles are not encapsulated. The amount of the resin adhered to the surface of the soluble particles is adjusted so that when encapsulated, the coating thickness is practical for polishing. The adhesion amount of the resin is, for example, about 0.1% to 20%, preferably about 0.1% to 10%, more preferably about 0.5% to 5% with respect to the weight of the soluble particles. Encapsulation (microencapsulation) means that soluble particles become insoluble in the polishing liquid by coating the soluble particles with a resin insoluble in the polishing liquid. That is, even when the resin is adhered to the soluble particles, if the soluble particles are dissolved in the polishing liquid, it is not called encapsulation.

  Soluble particles include surfactants, anticorrosives (film forming agents), oxidizing agents, reducing agents, dispersing agents, buffers (pH adjusting agents), chelating agents (complexing agents), processing accelerators, and stable processing performance. Particles of additives such as oxidizers, specularity improvers, rust inhibitors, etching agents, or when the additives are in liquid form, for example, particles that are dried and powdered by spray drying or the like, or solid additives There may be mentioned particles which are dissolved in a solvent such as pure water to form a liquid and are then dried and powdered by, for example, a spray drying method. Soluble particles having an arbitrary particle size can be obtained by converting the solid additive into a liquid state and re-drying the powder.

Here, the surfactant is a so-called improvement in the dispersibility of abrasive grains, for example, so that the polishing rate is remarkably reduced when polishing of the convex portion is finished in the polishing of the pattern wafer and becomes a flat surface, so that the polishing does not substantially proceed. It is an additive added for the purpose of developing a self-stop function and reducing scratches generated on the surface of the object to be polished.
An anticorrosive (film forming agent) is an additive that is added to form a sparingly soluble protective film on the surface of the Cu film so that isotropic etching does not proceed in the acidic region during polishing of the Cu film, for example. is there.

The oxidizing agent is an additive that is added to promote polishing by using the outermost surface of the metal layer as an oxide film when polishing the metal layer, for example.
A reducing agent is an additive that is added to neutralize the effect of an oxidizing agent when, for example, an object to be polished is polished.
A dispersing agent is an additive added, for example in order to improve the dispersibility of an abrasive grain.
The buffer (pH adjusting agent) is an additive added to adjust the pH during polishing, for example.
A chelating agent (complexing agent) is an additive added to promote the formation of a Cu chelate complex when, for example, polishing a Cu film.

The processing accelerator is an additive that is added, for example, to accelerate the processing speed when polishing the layer to be polished.
The processing performance stabilizer is an additive that is added to stabilize the processing performance when, for example, an object to be polished is polished.
The specularity improver is an additive added to improve the specularity of the surface when, for example, an object to be polished is polished.
A rust preventive agent is an additive that is added for rust prevention when, for example, an object to be polished is polished.
An etching agent is an additive added, for example, to make a chemical action dominant when polishing an object to be polished.

  As the resin to be adhered to the soluble particles, an appropriate material can be selected from the binder materials. The method of attaching the resin to the soluble particles includes the method of directly attaching the powdered resin to the soluble particles, the method of attaching the resin dissolved in the solvent to the soluble particles by the spray drying method, and the suspension of the resin dissolved in the solvent in the air. Examples thereof include known methods such as a method of attaching to soluble particles by a method. Here, the merit of producing the resin-adhering soluble particles includes facilitating the handling by attaching the resin to the soluble particles that are extremely hygroscopic and difficult to handle.

  The abrasive grains and the binder are mixed together with the resin-attached soluble particles to form a mixed powder. Thereafter, the mixed powder is put into a predetermined mold and heated and pressed. During the heat and pressure molding, both the resin and the binder attached to the soluble particles by heating or one of them is softened or melted, and the surface of the soluble particles is tightly wrapped by pressing. Thereby, the grindstone containing the microcapsule which sealed the soluble particle is manufactured.

  Here, the form of the abrasive grains may be a granulated product obtained by granulating the abrasive grains as described above. Further, the form of the abrasive grains and the binder may be a granulated product of the abrasive grains and the binder obtained by mixing the abrasive grains and the binder to form a mixed slurry and then pulverizing the mixed slurry into a dry powder. Further, the method of heat and pressure molding is a method that is technically equivalent to the method disclosed in, for example, JP-A-2003-11066. That is, the mixed powder as a material is heated by a heater to be liquefied, and this liquid material is filled in a predetermined mold and pressed. The conditions for heat and pressure molding vary depending on the binder, soluble particles, the type of resin to be attached to the soluble particles, and the like, but may be determined in advance by performing a molding experiment.

  A grindstone becomes a product through external shape processing and flat surface processing after performing heat and pressure molding. This grindstone does not have sufficient strength for handling (handling), and it adheres to the pedestal because it may break or break when transported or fixed to the device. The grindstone is fixed to the pedestal by adhesion, adhesion, or mechanical fixing. This fixing operation can also be performed during the formation of the grindstone. However, when the thermal expansion coefficients of the grindstone and the pedestal are different or when the deterioration of the grindstone can occur, it is preferable to perform the fixing operation after the forming.

  Although it is desirable that the grindstone has a certain thickness from the viewpoint of wear, a thin flat plate may be used when wear is small during use. When a grindstone is used for polishing, the polishing is often performed while supplying a polishing liquid to the grindstone. For this reason, there exists a problem that a grindstone will swell with polishing liquid. Therefore, in order to bring the grindstone closer to the state in use, it is preferable to fix the grindstone to the pedestal in a state where the grindstone is swollen to some extent. That is, it is preferable that the same polishing liquid as in use is sufficiently soaked into the grindstone so as to be swollen with the polishing liquid, and fixed to the pedestal in a state where the size and shape of the grindstone itself are stable.

  FIG. 2 is a plan view showing an arrangement configuration of each part of a polishing apparatus (chemical mechanical polishing apparatus) mainly for polishing a semiconductor wafer according to an embodiment of the present invention. In this polishing apparatus, the above-described grindstone and a relatively soft polishing pad conventionally used are used. As shown in FIG. 2, the polishing apparatus includes four load / unload stages 22 on which a wafer cassette 21 for stocking a plurality of semiconductor wafers is placed. The load / unload stage 22 may have a mechanism capable of moving up and down. A transfer robot 24 having two hands is arranged on the traveling mechanism 23 so that each wafer cassette 21 on the load / unload stage 22 can be reached.

  Of the two hands in the transfer robot 24, the lower hand is used only when a semiconductor wafer is received from the wafer cassette 21, and the upper hand is used only when the semiconductor wafer is returned to the wafer cassette 21. This is because the clean semiconductor wafer after cleaning is held only by the upper hand so as not to contaminate the semiconductor wafer. The lower hand is a suction-type hand that vacuum-sucks the semiconductor wafer, and the upper hand is a drop-type hand that holds the peripheral edge of the semiconductor wafer. The suction-type hand accurately conveys regardless of the positional deviation of the semiconductor wafer in the wafer cassette 21, and the drop-type hand does not collect dust like vacuum suction, so that it can be conveyed while maintaining the cleanness of the back surface of the semiconductor wafer. .

  Two cleaning machines 25 and 26 are disposed on the opposite side of the traveling mechanism 23 of the transfer robot 24 from the wafer cassette 21. Each of the washing machines 25 and 26 is disposed at a position where the hand of the transfer robot 24 can reach. In addition, a wafer station 70 including four semiconductor wafer mounting tables 27, 28, 29, and 30 is disposed between the two cleaning machines 25 and 26 at a position where the transfer robot 24 can reach. The cleaning machines 25 and 26 have a spin dry function for drying a semiconductor wafer by rotating it at a high speed. This makes it possible to cope with two-stage cleaning and three-stage cleaning of a semiconductor wafer without replacing modules.

  In order to divide the cleanliness between the area B where the cleaning machines 25 and 26 and the mounting tables 27, 28, 29 and 30 are arranged and the area A where the wafer cassette 21 and the transfer robot 24 are arranged, a partition wall 84 is arranged. The shutter 31 is provided at the opening of the partition wall 84 for transporting the semiconductor wafer between the regions A and B. A transfer robot 80 having two hands that can reach the cleaning machine 25 and the three mounting tables 27, 29, and 30 is disposed, and can reach the cleaning machine 26 and the three mounting tables 28, 29, and 30. A transfer robot 81 having two hands is arranged.

  The mounting table 27 is used to transfer semiconductor wafers between the transfer robot 24 and the transfer robot 80, and includes a semiconductor wafer presence / absence detection sensor 91. The mounting table 28 is used to deliver a semiconductor wafer between the transfer robot 24 and the transfer robot 81 and includes a semiconductor wafer presence / absence detection sensor 92. The mounting table 29 is used to transfer a semiconductor wafer from the transfer robot 81 to the transfer robot 80, and includes a semiconductor wafer presence / absence detecting sensor 93 and a rinse nozzle 95 for preventing or cleaning the semiconductor wafer. . The mounting table 30 is used to transfer a semiconductor wafer from the transfer robot 80 to the transfer robot 81, and includes a semiconductor wafer presence / absence detection sensor 94 and a rinse nozzle 96 for preventing or cleaning the semiconductor wafer. . The mounting tables 29 and 30 are arranged in a common waterproof cover, and a shutter 97 is provided in the opening of the transport cover. The mounting table 29 is located on the mounting table 30, and the cleaned semiconductor wafer is placed on the mounting table 29, and the semiconductor wafer before cleaning is placed on the mounting table 30, thereby preventing contamination due to falling rinse water. In FIG. 2, the sensors 91, 92, 93, 94, the rinse nozzles 95, 96, and the shutter 97 are schematically shown, and the position and shape are not accurately illustrated.

  A reversing device 40 for reversing the semiconductor wafer is arranged at a position where the hand of the transport robot 80 can reach, and the semiconductor wafer is transported to the reversing device 40 by the transport robot 80. A reversing machine 41 for reversing the semiconductor wafer is disposed at a position where the hand of the transport robot 81 can reach, and the semiconductor wafer is transported to the reversing machine 41 by the transport robot 81. The reversing machine 40 and the reversing machine 41 include a chuck mechanism for chucking the semiconductor wafer, a reversing mechanism for reversing the front and back surfaces of the semiconductor wafer, and a detection sensor for confirming whether the semiconductor wafer is chucked by the chuck mechanism. I have.

  The upper hand of the transfer robot 80 and the transfer robot 81 is used to transfer a semiconductor wafer that has been cleaned once, and the lower hand is used to transfer a semiconductor wafer that has never been cleaned and a semiconductor wafer that has not been polished. Used to carry. In this way, by putting the semiconductor wafer into and out of the reversing machines 40 and 41 with the lower hand, the upper hand is not contaminated by the rinsing water drops from the upper walls of the reversing machines 40 and 41. A cleaning machine 82 is disposed at a position where the hand of the transfer robot 80 can reach so as to be adjacent to the cleaning machine 25. In addition, a cleaning machine 83 is arranged at a position where the hand of the transfer robot 81 can reach so as to be adjacent to the cleaning machine 26. The cleaning machines 25, 26, 82, 83, the mounting tables 27, 28, 29, 30 of the wafer station 70 and the transfer robots 80, 81 are all arranged in the area B, and the pressure in the area B is the area A The pressure is adjusted to be lower than the internal pressure. The washing machines 82 and 83 are washing machines capable of performing double-sided washing.

  This polishing apparatus has a housing 66 so as to surround each device, and the inside of the housing 66 includes a plurality of rooms (region A and region B) by a partition wall 84, a partition wall 85, a partition wall 86, a partition wall 87, and a partition wall 67. ). A polishing chamber separated from the region B by the partition wall 87 is formed, and the polishing chamber is further partitioned into two regions C and D by the partition wall 67. The partition wall 87 that separates the region B from the regions C and D is provided with an opening for transporting a semiconductor wafer, and shutters 45 and 46 are provided in the opening.

  In each of the two regions C and D, two polishing tables and one top ring for holding one semiconductor wafer and polishing while pressing the semiconductor wafer against the polishing table are arranged. That is, the polishing tables 54 and 56 are arranged in the area C, the polishing tables 55 and 57 are arranged in the area D, the top ring 52 is arranged in the area C, and the top ring 53 is arranged in the area D, respectively. Yes. Pushers 64 and 65 for transferring the semiconductor wafer to the top rings 52 and 53 are arranged at positions adjacent to the reversing machine 40 and the reversing machine 41.

  In the region C, a polishing liquid supply nozzle 60 for supplying a polishing liquid to the polishing table 54 and a dresser 58 for dressing the polishing table 54 are arranged. In the region D, a polishing liquid supply nozzle 61 for supplying the polishing liquid to the polishing table 55 and a dresser 59 for dressing the polishing table 55 are arranged. Further, a dresser 68 for dressing the polishing table 56 is arranged in the region C, and a dresser 69 for dressing the polishing table 57 is arranged in the region D. Instead of the polishing tables 56 and 57, a wet type wafer film thickness measuring machine may be installed. In this case, the film thickness of the semiconductor wafer immediately after polishing can be measured, and the polishing process for the next semiconductor wafer can be controlled by using an increased amount of shaving of the semiconductor wafer or by using the measured value.

Next, the polishing chamber will be described in more detail. Hereinafter, only the region C will be described, but the region D can be considered in the same manner as the region C.
The semiconductor wafer transferred to the top ring 52 via the pusher 64 is sucked by the vacuum suction mechanism of the top ring 52, and the semiconductor wafer is conveyed by the top ring 52 to the polishing table 54. Then, the semiconductor wafer is polished on a polishing surface made of a polishing pad attached on the polishing table 54 or a grinding stone (fixed abrasive) of the present invention. The above-described second polishing table 56 is disposed at a position where the top ring 52 can be reached. As a result, after the polishing of the semiconductor wafer is completed by the first polishing table 54, the semiconductor wafer can be subjected to finish polishing with the polishing pad for finishing attached to the second polishing table 56.

  In the polishing table 56, a finishing process is performed while supplying pure water or a chemical solution containing no abrasive grains to a polishing pad such as SUBA400 or Polytex (both are names of polishing pads and manufactured by Rodel Nitta), or slurry. To polish. Depending on the type of film formed on the semiconductor wafer, after polishing with the second polishing table 56, finishing may be performed with the first polishing table 54. Alternatively, fixed abrasive grains may be provided on the small-diameter polishing table 56, and polishing pads may be provided on the large-diameter polishing table 54. After polishing with the small-diameter polishing table 56, polishing may be performed with the large-diameter polishing table 54. Good.

  The price of the fixed abrasive grains (grinding stone) is higher than that of the polishing pad and increases in proportion to the diameter, so that it is cheaper to use for a small diameter polishing table. Further, since the life of the polishing pad is shorter than that of a grindstone, the use of a polishing table with a large diameter that can disperse the contact frequency and prolong the life of the polishing surface increases the maintenance cycle and improves the productivity. Therefore, as described above, a grindstone that is more expensive than the polishing pad is used for the small-diameter polishing table 56, and after rough cutting, a polishing pad that has a short life compared to the grindstone is used for the large-diameter polishing table 54. If finish polishing is performed here, running cost can be reduced and maintainability can be improved.

3A is a plan view showing the main part of the polishing apparatus shown in FIG. 2, and FIG. 3B is a cross-sectional view showing the main part of the polishing apparatus shown in FIG. 3A and 3B show a configuration example in which a grindstone is mounted on a polishing table. A polishing tool 117 in which a grindstone 115 having a diameter of about 60 cm is pasted on a disk 116 is mounted on the upper surface of the polishing table 56 (57), and water or chemicals not containing abrasive grains are being polished above the polishing tool 117. A liquid supply nozzle 110 for supplying is disposed. Here, the polishing tool 117 is a tool in which a grindstone 115 is fixed to a metal or ceramic disk 116 with an adhesive. The polishing tool 117 is securely fixed to the polishing table 56 (57) by the clamp mechanism 118. The wafer polishing conditions are, for example, wafer surface pressure: 300 g / cm ² , rotation speed: table / wafer = 30/35 min ⁻¹ , liquid supply amount: 200 cc / min, liquid type: pure water. Moreover, you may carry out on the conditions of wafer surface pressure: 500g / cm < ² >, rotational speed: table / wafer = 25 / 10min < ^-1 >, liquid supply amount: 200cc / min, liquid type: pure water. Since the grindstone 115 contains microcapsules in which a polishing aid is enclosed, basically the type of liquid supplied may be pure water. Here, the reason for supplying water or the like onto the polishing surface of the grindstone 115 is to lubricate the polishing surface during polishing and to remove heat generated by the polishing. Note that ultrapure water containing no impurities may be supplied, or an alkaline solution or the like may be supplied instead of water.

  The top ring 101 that holds the semiconductor wafer 104 is tiltably held on the rotating shaft 108 via the ball bearing 111, and rotates at a predetermined rotation speed as the rotating shaft 108 rotates. A semiconductor wafer 104 that is an object to be polished is held in a guide ring 128 disposed at the peripheral edge of the top ring 101, and is pressed by the top ring 101 onto the grindstone 115 through the elastic mat 102, while being rotated by the rotating shaft 108. It is rotated. On the other hand, the polishing table 56 (57) to which the polishing tool 117 is fixed is also driven to rotate independently. Then, the surface to be polished of the semiconductor wafer 104 slides with the surface of the grindstone 115 so that the semiconductor wafer 104 is polished. In the subsequent finishing step, cleaning and finishing are performed with a soft polishing pad while supplying pure water (or a chemical solution that does not contain abrasive grains).

  FIG. 4 is a cross-sectional view for explaining how the polishing tool is fixed to the polishing table by the clamp method. The grindstone 115 is fixed to a disk 116 made of aluminum or the like by sticking, and the grindstone 115 and the disk 116 constitute a polishing tool 117. A clamp mechanism 118 is provided on the outer peripheral portion of the polishing table 56 (57), and a movable portion 119 of the clamp mechanism 118 fixes the outer peripheral portion of the polishing tool 117. Accordingly, the polishing tool 117 to which the grindstone 115 is attached with the movable portion 119 opened is placed on the polishing table 56 (57), and the movable portion 119 is closed, so that the polishing tool 117 is moved by the spring mechanism of the movable portion 119. It can be fixed to the polishing table 56 (57). Further, the polishing tool 117 can be removed from the polishing table 56 (57) by rotating the movable portion 119 from the closed position to the open position of the movable portion 119.

  FIG. 5 shows another fixing method for fixing the polishing tool 117 to the polishing table 56 (57). The grindstone 115 is fixed to a disk 116 made of aluminum or the like by sticking, and the grindstone 115 and the disk 116 constitute a polishing tool 117. A flange portion 117A that protrudes radially outward is formed on the outer peripheral portion of the polishing tool 117, and the polishing tool 117 is polished by sandwiching the flange portion 117A between the polishing table 56 (57) and the clamp 132. It is fixed to the table 56 (57). That is, as shown in FIG. 5, the flange portion 117A of the polishing tool 117 is sandwiched between the four clamps 132 and the surface of the polishing table 56 (57), and the bolt 133 is provided on the polishing table 56 (57). Screw into the screw hole. In this way, the polishing tool 117 is fixed to the polishing table 56 (57). Therefore, the polishing tool 117 can be easily attached to and detached from the polishing table 56 (57) by attaching and detaching the bolt 133. As shown in FIG. 5, the clamp 132 has a relatively wide arc-shaped structure, and an angle formed by both ends of the clamp 132 with respect to the center of the clamp 132 is set to 44 °. The relatively wide clamp 132 is used because the flange 117A of the polishing tool 117 is pressed against and fixed to the polishing table 56 (57) by the clamp 132, so that the deflection caused by this pressing appears on the polishing surface of the grindstone 115. This is to prevent it from occurring.

  Further, a total of four projecting portions 135 are arranged on the outer peripheral portion of the flange portion 117 </ b> A of the disk 116 constituting the polishing tool 117. Each protrusion 135 is provided with a screw hole 136, and a push bolt 137 or a suspension bolt (not shown) is screwed into the screw hole 136. Since the polishing tool 117 has a considerable weight, the suspension bolt is provided in order to facilitate handling (handling) when the polishing tool 117 is replaced. The push bolt 137 is provided to peel off the polishing tool 117 that is in close contact with the polishing table 56 (57). That is, when the push bolt 137 is screwed into the screw hole 136, the tip of the push bolt 137 comes into contact with the surface of the polishing table 56 (57), and the push bolt 137 is further rotated to remove the polishing tool 117 from the polishing table. 56 (57). A groove 138 is formed at a position with respect to the screw hole 136 of the polishing table 56 (57). The groove 138 serves to receive the tip of the push bolt 137 or the suspension bolt.

  In this embodiment, four clamps 132 and four projections 135 are provided, but in consideration of use conditions such as pressing weight, the clamps are configured in a ring shape so that the entire polishing tool 117 can be used. The circumference may be fixed. Further, the number of the protrusions 135 may be appropriately increased or decreased in consideration of the weight of the polishing tool 117 and the adhesion force with the polishing table 56 (57). In addition, as a material of the disk 116 to which the grindstone is attached, for example, stainless steel or titanium other than aluminum may be used, or a resin may be used from the viewpoint of corrosion resistance.

  Next, as an example of a grindstone manufactured according to the present invention, a grindstone containing microcapsules encapsulating a surfactant is cited, and the results of polishing a silicon wafer on which a thermal oxide film is formed will be described below.

  A schematic diagram of a grindstone containing microcapsules encapsulating a surfactant is shown in FIG. Abrasive granulated product 18 made of cerium oxide is used for the abrasive grains, epoxy resin is used for the binder 11, a surfactant that has been dried and powdered in advance is used for the soluble particles (solid particles) 12, and a resin that adheres to the soluble particles 12 is used. Acrylic resin was used. The step of attaching the acrylic resin to the surfactant was performed by an air suspension method. At that time, 3.0 wt% acrylic resin was adhered to the surfactant. The soluble particles (surfactant) 12 to which the acrylic resin is adhered, the granulated product 18 and the binder (epoxy resin) 11 are mixed and heat-press molded, whereby the soluble particles (surfactant) 12 are enclosed. A grindstone containing the microcapsules 17 thus obtained was obtained. Reference numeral 15 denotes a hole formed between the binders 11.

  In general, when a surfactant is dissolved in water, the viscosity of the solution varies greatly depending on the concentration of the surfactant. Therefore, if the grinding stone containing the surfactant with the acrylic resin attached and the microcapsules encapsulating the surfactant is immersed in water, and measuring the rate of change in the viscosity of the solution before and after the immersion, the surfactant is eluted. The degree can be estimated. In this way, it can be confirmed that the microcapsule is coated with a surfactant to a practically sufficient level.

  FIG. 7 shows the viscosity change rate when 0.5 g of a surfactant (resin-attached soluble particles) with acrylic resin attached is immersed in 49.5 g of water for 2.5 hours, and a microcapsule in which the surfactant is enclosed. The result of having compared the viscosity change rate at the time of immersing the grindstone containing 0.5g in 49.5g of water for 20 days is shown. Since the surfactant having only the acrylic resin adhered has a large viscosity change rate of about 30%, it was confirmed that the surfactant was not sealed as a microcapsule only by attaching the acrylic resin to the surfactant. On the other hand, in the grindstone containing the microcapsules in which the surfactant is encapsulated, the viscosity change rate was 0%. Therefore, the acrylic resin was microencapsulated during the heat and pressure molding, and the surfactant was sealed. It was found that elution of the active agent was suppressed.

  FIG. 8 shows the result of polishing a silicon wafer with a thermal oxide film using a grindstone containing microcapsules filled with this surfactant. In polishing, pure water was used as a polishing liquid. FIG. 8 is a graph showing the relationship between the microcapsule content of the grindstone and the number of defects such as scratches generated on the surface to be polished. The microcapsule content is represented by the ratio between the weight of the microcapsules in the grindstone and the weight of the grindstone containing the microcapsules. The number of defects is shown as a relative value when the microcapsule content is 0%, that is, when the number of defects when no microcapsule is included is 100%. As shown in FIG. 8, it is confirmed that the number of defects that cause problems when a device wafer is produced is reduced by including microcapsules encapsulating a surfactant in a grindstone. It was confirmed that it was working. Moreover, from the results shown in FIG. 8, it was confirmed that the microcapsule content had an appropriate range. That is, the weight of the microcapsule with respect to the total weight of the grindstone is 0.1 to 10 wt%, preferably 0.5 to 5 wt%.

  On the other hand, the relationship between the amount of acrylic resin adhered to the surfactant and the number of defects was examined. FIG. 9 is a graph showing the relationship between the average resin adhesion rate and the number of defects in resin-adhesive soluble particles. In addition, an average resin adhesion rate is represented by ratio of the weight of the acrylic resin in the resin adhesion soluble particle, and the weight of the resin adhesion soluble particle. The number of defects is shown as a relative value when the microcapsule content is 0%, that is, when the number of defects when no microcapsules are included is 100%. As shown in FIG. 9, it was confirmed that the number of defects increases when the amount of acrylic resin is larger than a certain amount. From this, it can be seen that there is an appropriate range in the ratio of the weight of the acrylic resin to the weight of the resin-attached soluble particles. That is, the adhesion amount of the acrylic resin is about 0.1% to 20%, preferably about 0.1% to 10%, more preferably about 0.5% to 5% with respect to the weight of the soluble particles. Further, if the resin amount is increased in order to seal the soluble particles in the microcapsules before the heat and pressure molding, the number of defects increases. Since the production method of the present invention enables microencapsulation even with a small amount of resin, a grindstone suitable for polishing a device wafer can be produced.

FIG. 10 is a schematic diagram showing a grindstone containing microcapsules encapsulating a surfactant, and FIG. 11 is a schematic diagram showing a granulated product composed of abrasive grains and a binder. The abrasive grains 10 are made of cerium oxide, the binder 11 is made of acrylic resin, and the mixed slurry containing the abrasive grains 10 and the binder 11 is dried and granulated, and the abrasive grains 10 and the binder 11 shown in FIG. The granulated product 18 was formed. For the soluble particles 12, a dry powdered surfactant was used, and for the resin to be attached to the soluble particles 12, an acrylic resin was used. The step of attaching the acrylic resin to the surfactant was performed by an air suspension method. At that time, 3.0 wt% acrylic resin was adhered to the surfactant. The soluble particles (surfactant) 12 to which the acrylic resin is adhered and the granulated product 18 of abrasive grains (cerium oxide) 10 and a binder (acrylic resin) 11 are mixed and heated and pressed to form soluble particles. A grindstone containing microcapsules 17 enclosing (surfactant) 12 was obtained. Here, the holes 15 shown in FIG. 10 are holes formed at the time of heat and pressure molding, and are different from the holes 19 shown in FIG. The holes 19 shown in FIG. 11 are not shown in FIG. In FIG. 11, the shape of the granulated product 18 is drawn round (that is, in a spherical shape). However, in an actual grindstone, the shape of the granulated product 18 is a polyhedron as shown in FIG.
In addition, each said embodiment described only one preferable embodiment of this invention, and of course, a various deformation | transformation is possible, without deviating from the meaning of this invention.

It is a figure which shows typically the manufacturing method of the grindstone which concerns on embodiment of this invention. It is a top view which shows the arrangement configuration of each part of the grinding | polishing apparatus mainly grind | polished a semiconductor wafer concerning one Embodiment of this invention. 3A is a plan view showing the main part of the polishing apparatus shown in FIG. 2, and FIG. 3B is a cross-sectional view showing the main part of the polishing apparatus shown in FIG. It is sectional drawing for demonstrating a mode that a grinding | polishing tool is fixed to a grinding | polishing table by a clamp. It is a perspective view which shows the other fixing method which fixes a polishing tool to a polishing table. It is a schematic diagram which shows the grindstone containing the microcapsule with which surfactant was enclosed. It is a graph which shows the result of having compared the viscosity change rate of the surfactant to which the acrylic resin was made to adhere, and the microcapsule with which the surfactant was enclosed. It is a graph which shows the relationship between the microcapsule content rate of a grindstone, and the number of defects which generate | occur | produced in the to-be-polished surface. It is a graph which shows the relationship between the average resin adhesion rate in a resin adhesion soluble particle, and the number of defects. It is a schematic diagram which shows the grindstone containing the microcapsule with which surfactant was enclosed. It is a schematic diagram which shows the granulated material which consists of an abrasive grain and a binder.

Explanation of symbols

10 Abrasive grains 11 Binder 12 Soluble particles (solid particles)
15 Hole 17 Microcapsule (Capsule)
18 Flowing material 19 Hole 21 Wafer cassette 22 Load / unload stage 23 Travel mechanism 24 Transport robot 25, 26 Washing machine 27, 28, 29, 30 Mounting table 31, 45, 46 Shutter 40, 41 Reversing machine 52, 53 Top ring 54, 55, 56, 57 Polishing table 58, 59, 68, 69 Dresser 60, 61 Polishing liquid supply nozzle 64, 65 Pusher 66 Housing 67 Bulkhead 70 Wafer station 80, 81 Transport robot 82, 83 Cleaning machine 84, 85 , 86, 87 Partitions 91, 92, 93, 94 Sensors 95, 96 Rinse nozzle 97 Shutter 101 Top ring 102 Elastic mat 104 Semiconductor wafer 108 Rotating shaft 110 Liquid supply nozzle 111 Ball bearing 115 Grinding stone 116 Disc 117 Polishing tool 117A Brim 1 18 Clamping mechanism 119 Movable part 128 Guide ring 132 Clamp 133 Bolt 135 Projection part 136 Screw hole 137 Push bolt 138 Groove

Claims (11)

A method for producing a grindstone containing a capsule encapsulating solid particles soluble in a polishing liquid,
A resin-insoluble soluble particle is formed by attaching a resin insoluble in the polishing liquid to the surface of the solid particle,
Abrasive grains, a binder, and the resin-adhesive soluble particles are mixed to form a mixed powder,
A method for producing a grindstone, wherein the capsule encapsulating the solid particles is formed by heating and pressing the mixed powder. At least one of surfactant, anticorrosive, oxidizing agent, reducing agent, dispersant, buffer, chelating agent, processing accelerator, processing performance stabilizer, specularity improver, rust inhibitor, and etching agent Select additives,
When the selected additive is in a liquid form, the additive is dried and powdered to form the solid particles as a pretreatment for forming the resin-attached soluble particles. The manufacturing method of the grindstone of claim | item 1.   The abrasive powder and the binder are mixed and granulated to form a granulated material in advance, and then the granulated material is mixed with the resin-attached soluble particles to form the mixed powder. The manufacturing method of the grindstone of 1 or 2.   The granulated product is formed in advance by granulating the abrasive grains, and then the granulated product is mixed with the binder and the resin-adhesive soluble particles to form the mixed powder. The manufacturing method of the grindstone described in 2. A method for producing a grindstone having abrasive grains, a binder, and a capsule encapsulating an additive,
A resin is attached to the surface of the additive,
A method for producing a grindstone, comprising: mixing the additive to which the resin is adhered, abrasive grains, and a binder, and then forming the capsule in which the additive is encapsulated by heating and pressing. . A grindstone having abrasive grains, a binder, and a capsule encapsulating solid particles soluble in a polishing liquid,
A resin insoluble in a polishing liquid is attached to the surface of the solid particles to form resin-attached soluble particles, and the abrasive grains, the binder, and the resin-attached soluble particles are mixed to form a mixed powder, A grindstone characterized in that the capsule encapsulating the solid particles is formed during heat and pressure molding by heat and pressure molding of the mixed powder. At least one of surfactant, anticorrosive, oxidizing agent, reducing agent, dispersant, buffer, chelating agent, processing accelerator, processing performance stabilizer, specularity improver, rust inhibitor, and etching agent Select additives,
When the selected additive is in a liquid form, the additive is dried and powdered to form the solid particles as a pretreatment for forming the resin-attached soluble particles; The grindstone according to claim 6.   The abrasive powder and the binder are mixed and granulated to form a granulated material in advance, and then the granulated material is mixed with the resin-attached soluble particles to form the mixed powder. Item 8. The grindstone according to Item 6 or 7.   The granulated product is formed in advance by granulating the abrasive grains, and then the granulated product is mixed with the binder and the resin-attached soluble particles to form the mixed powder. The grindstone according to 7. A grindstone having abrasive grains, a binder, and a capsule encapsulating an additive,
A resin is attached to the surface of the additive,
A grindstone, wherein the additive-encapsulated capsule is formed by mixing the additive to which the resin is adhered, abrasive grains, and a binder, followed by heat and pressure molding. A top ring for holding an object to be polished;
A polishing apparatus comprising: a polishing table having the grindstone according to any one of claims 6 to 10.

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