JP2005203506A - Production process of package structure, transfer method, jig and its production process - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a process for producing a highly reliable package structure inexpensively with high efficiency. <P>SOLUTION: The production process of a package structure for connecting a plurality of first connection terminals 120 formed on a first substrate 100 with a plurality of second connection terminals 204a formed on a second substrate 200 comprises a step for pressing the joint of a first connection terminal 120 selected from the plurality of first connection terminals 120 and a second connection terminal 204a selected from the plurality of second connection terminals 204a with a high pressure as compared with other regions. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a mounting structure, and more particularly to a method for manufacturing a mounting structure that can efficiently manufacture a highly reliable mounting structure at low cost. The present invention also relates to a transfer technique in which a transfer target made of a thin film layer such as a thin film circuit chip is peeled and peeled and transferred to another substrate.

  When manufacturing a display using a thin film transistor (TFT) or an EL element, a process of forming a thin film transistor on a substrate is usually performed. Since a thin film transistor is generally formed at a high temperature, the substrate on which the thin film transistor is formed is required to have high heat resistance. However, since such a substrate having high heat resistance is expensive and increases the cost of the product, a method of transferring a thin film transistor to an inexpensive substrate after forming the thin film transistor on the substrate has been developed.

  For example, Japanese Patent Laid-Open No. 10-125929 (Patent Document 1) discloses such a thin film transistor transfer method. In the method described in the publication, a transfer target such as a thin film transistor is formed on a substrate having high heat resistance (transfer source substrate) such as quartz glass, and then transferred to an inexpensive transfer destination substrate having low heat resistance. A method of transferring the body is disclosed.

According to such a method, the transfer target can be transferred to a low-priced and easy-to-process substrate after performing a process at a high temperature on a highly heat-resistant substrate, so that a large and inexpensive liquid crystal display or the like can be easily obtained. Can be manufactured.
Japanese Patent Laid-Open No. 10-125929

  By the way, when connecting a to-be-transferred body and a transfer destination board | substrate via a connection terminal, the variation in height may arise between connection terminals. In such a case, in order to ensure connection between the two, the pressure is usually applied at the time of connection.

  However, when a large substrate is used as in the case of manufacturing a large display, if the transfer is performed by the conventional method, pressure is applied to the entire transfer source substrate, and thus a great amount of pressure is required. Moreover, in order to apply a large pressure, it is necessary to use a pressurizing machine having a large output, and there is a problem that the apparatus is enlarged and the manufacturing cost is increased.

  Therefore, there is still room for improvement from the viewpoint of manufacturing cost and manufacturing efficiency.

  Therefore, an object of the present invention is to provide a method for manufacturing a mounting structure that can efficiently manufacture a highly reliable mounting structure at low cost.

  Another object of the present invention is to provide a jig for manufacturing a highly reliable mounting structure efficiently at low cost and a method for manufacturing the same.

  In order to solve the above-described problem, a first aspect of the present invention includes a plurality of first connection terminals formed on a first substrate and a plurality of second connection terminals formed on a second substrate. A method of manufacturing a mounting structure to be connected, wherein a connection between a first connection terminal selected from the plurality of first connection terminals and a second connection terminal selected from the plurality of second connection terminals is provided. The manufacturing method of the mounting structure including the press process which presses a part with a pressure higher than the area | regions other than the said connection part is provided.

  According to this, by pressing the part (desired connection part) that requires pressurization with a pressure higher than the others, the applied pressure can be reduced as compared with the case of pressing with the same pressure as a whole. It becomes possible. Therefore, the pressurizing device used for pressing can be a device with a small output, so that the size of the device can be reduced. Therefore, the manufacturing cost of the mounting structure can be reduced and the manufacturing efficiency can be improved. Moreover, since it presses on a desired connection part, it becomes possible to ensure the connection between connection terminals. Therefore, a highly reliable mounting structure can be provided. Here, in the connection part, in addition to the connection part between the single connection terminals when the single connection terminals are connected to each other, the connection area when the group of connection terminals are connected to each other is also included in the connection part. Shall.

  It is preferable that the said press process is what selectively presses only the said connection part. According to this, since only the connecting portion is selectively pressed, the manufacturing cost can be further reduced, and further efficiency can be achieved.

  It is preferable that the pressing step is a step of pressing using a jig having a protrusion at a portion corresponding to the connection portion. According to this, it becomes possible to apply pressure efficiently only to a desired connection part reliably by using the jig which has a projection part in the site | part corresponding to a connection part. In addition, when the same pressure is applied to the entire substrate and when applied through a jig having a protrusion, the contact area is smaller when a jig having a protrusion is used. The power that can be given increases. Therefore, as a whole, a pressure equal to or higher than the conventional pressure can be accurately applied to a necessary portion with a pressure smaller than the conventional pressure.

  It is particularly preferably used when the pressing step is a step of joining and pressing the selected first connection terminal and the selected second connection terminal via an anisotropic conductive paste. . In such a case, for example, since the connection terminals are connected to each other through conductive particles contained in the anisotropic conductive paste, it is necessary to reliably apply a predetermined pressing force at the time of connection.

  The first substrate is a transfer source substrate including a thin film circuit chip for peeling and transferring to a transfer destination substrate, the second substrate is a transfer destination substrate to which the thin film circuit chip is transferred, and the pressing It is preferable to include a peeling transfer step of peeling and transferring the thin film circuit chip from the transfer source substrate to the transfer destination substrate after the step. According to this, it is possible to avoid the problem of poor connection that occurs during transfer.

  It is preferable that the jig is disposed on either the first substrate side or the second substrate side when pressed. According to this, it becomes possible to connect a connection part reliably.

  In addition, when the thin film circuit chip is formed on the first substrate via a release layer, the jig is preferably disposed on the first substrate side. By providing a difference in the pressing force between the connection portion and the other region, distortion occurs at the boundary portion, particularly at the boundary portion in the release layer. Accordingly, when the first substrate and the second substrate are separated from each other in a later transfer peeling step, only the selected thin film circuit chip can be easily peeled off.

  The jig may be disposed on both sides of the first substrate and the second substrate when pressed. According to this, it is possible to further increase the efficiency of the pressing force, and it is possible to make the connection between the connection terminals more reliable.

  It is preferable that the size of the tip portion of the projection of the jig is substantially the same as the size of the connection portion. According to this, it becomes possible to apply a pressure efficiently only to a connection part.

  A second aspect of the present invention is a method for transferring a plurality of transfer objects provided on a first substrate to a second substrate, wherein the first substrate and the second substrate are bonded together. And a step of pressurizing a current transfer target formation region in which a transfer target object to be transferred this time among the plurality of transfer target members is formed at a pressure higher than a region other than the current transfer target formation region; and A step of separating and transferring the transferred object to be transferred this time to the second substrate side among the transferred objects formed on the first substrate by separating the first substrate and the second substrate. And a transfer method of a transfer medium including the above.

  According to this, since the current transfer target forming area is pressed with a pressure higher than that of the other areas, it is possible to reduce the pressure as compared with the case where the entire area is pressed with the same pressure. Therefore, the pressurizing device used for pressing does not require a device having a large output, and thus the device can be miniaturized. In addition, since the region to be transferred this time is pressed, it is possible to transfer the transferred object reliably.

  In the pressurizing step, it is preferable to selectively pressurize only the current transfer target forming region. According to this, a pressure can be provided efficiently.

  A first connection terminal is formed on the transfer object, a second connection terminal is formed on the second substrate, and the pressurizing step further includes the first connection terminal and the above-described step. It is preferable that it is a step of selectively pressurizing only the connection portion with the second connection terminal. According to this, a pressure can be applied to a desired location more efficiently.

  It is preferable that the pressurizing step is a step of pressurizing the current transfer target forming region using a jig having a protrusion. According to this, it is possible to efficiently apply pressure only to the region where the transfer target to be transferred this time is formed. In addition, when the same pressure is applied to the entire substrate and when applied through a jig having a protrusion, the contact area is smaller when a jig having a protrusion is used. The power that can be given increases. Therefore, as a whole, a pressure equal to or higher than the conventional pressure can be accurately applied to a necessary portion with a pressure smaller than the conventional pressure.

  A third aspect of the present invention is a jig used when connecting a plurality of first connection terminals formed on a first substrate and a plurality of second connection terminals formed on a second substrate. In addition, a protrusion is provided at a portion corresponding to a connection portion between the first connection terminal selected from the plurality of first connection terminals and the second connection terminal selected from the plurality of second connection terminals. Provide jigs. According to this, since the projection part is provided in the site | part corresponding to a desired connection part, it becomes possible to apply a pressure only to a desired connection part efficiently.

  According to a fourth aspect of the present invention, there is provided a jig used for transferring a plurality of transferred objects formed on a first substrate to a second substrate, the selected object selected from the plurality of transferred objects. The present invention provides a jig characterized in that a projection is provided at a site corresponding to the site where the selected transfer target is formed so that the site where the transfer body is formed can be pressed.

  It is preferable that the jig is formed of a flexible material. If the substrate to which the pressing force is applied (for example, the first substrate and / or the second substrate) is a large substrate, the substrate may be bent. In such a case, the jig is flexible. By being comprised with the material which has, it becomes possible to follow the bending of a board | substrate and it becomes possible to press a connection part more reliably.

  Examples of the flexible material include glass, rubber, and soft metal. Moreover, as said soft metal, aluminum is mentioned, for example.

  It is preferable that the size of the tip of the projection is substantially the same as the size of the connection. According to this, it becomes possible to apply a pressure efficiently only to a connection part.

  According to a fifth aspect of the present invention, there is provided a plurality of first connection terminals formed on the second substrate and a first connection terminal selected from a plurality of first connection terminals on which the projection pattern is formed on the first substrate. Provided is a jig manufacturing method for forming an arrangement pattern of the protrusions by photolithography so as to be arranged at a portion corresponding to a connection portion with a second connection terminal selected from two connection terminals. .

  According to this, it becomes possible to manufacture accurately the jig which has a projection part in a predetermined position.

  Hereinafter, a method for manufacturing a mounting structure according to an embodiment of the present invention will be described with reference to FIGS. In this embodiment, an example in which a mounting structure including a thin film circuit chip is manufactured by using a transfer method of transferring a plurality of thin film circuit chips as transfer objects provided on the first substrate to the second substrate. Will be described.

  FIG. 1A is a diagram illustrating an example of a first substrate 100 on which electrode pads 120 as a plurality of first connection terminals are formed.

  The first substrate (transfer source substrate) 100 has an electrical connection between a peeling layer 112, a wiring layer 113, a thin film transistor portion 102, a thin film transistor portion 102, and a wiring formed on a second substrate described later on a base substrate 110. The electrode pad 120 is formed as a first connection terminal for achieving a general connection. In FIG. 1A, reference numeral 130 denotes a transfer target as a transfer unit. In the present embodiment, the transfer target is a thin film circuit chip.

  FIG. 3 is a top view of the first substrate 100 used in the present embodiment. As shown in FIG. 3, a plurality of transferred objects 130 are formed on the first substrate 100 in the vertical and horizontal directions. In addition, the transfer target 130 includes one thin film transistor portion 102 and a plurality of electrode pads 120.

  As the substrate 110, it is preferable to use a light-transmitting and heat-resistant substrate such as a heat-resistant glass. Accordingly, in the subsequent light irradiation process, the irradiated light can reach the peeling layer 112 through the substrate 110.

  Here, the peeling layer 112 has a property that absorbs irradiated light and causes peeling (hereinafter referred to as “in-layer peeling” or “interfacial peeling”) within the layer and / or at the interface. Yes, preferably, the irradiation force of light causes loss or reduction of the bonding force between the atoms or molecules of the substance constituting the peeling layer 112, that is, ablation occurs, leading to in-layer peeling and / or interfacial peeling. Is good.

  Furthermore, gas may be released from the release layer 112 by light irradiation, and a separation effect may be exhibited. That is, when the component contained in the release layer 112 is released as a gas, the release layer 112 absorbs light and becomes a gas for a moment, and its vapor is released, which may contribute to separation. .

  Examples of such a release layer 112 include amorphous silicon (a-Si). Further, the release layer 112 may be composed of a multilayer film. The multilayer film may be composed of, for example, an amorphous silicon film and a metal film such as Al formed thereon. In addition, ceramics, metals, organic polymer materials, etc. having the above properties can be used.

  The formation method of the peeling layer 112 is not particularly limited, and is appropriately selected according to various conditions such as a film composition and a film thickness. For example, various vapor phase film forming methods such as CVD and sputtering, various plating methods, coating methods such as spin coating, various printing methods, transfer methods, ink jet coating methods, powder jet methods, etc., and two or more of these can be mentioned. Can also be formed.

  Although not shown in FIG. 1A, an intermediate layer is provided between the substrate 110 and the release layer 112 for the purpose of improving adhesion between the substrate 110 and the release layer 112, depending on the properties of the substrate 110 and the release layer 112. Also good. This intermediate layer prevents migration of components to or from the protective layer, insulating layer, transferred layer, or the like, which physically or chemically protect the transferred layer during manufacture or use, for example. It exhibits at least one of the functions as a barrier layer and a reflective layer.

  In addition, an insulating film (not shown) (eg, silicon oxide) is formed between the peeling layer 112 and the wiring layer 113. Thereby, the wiring layer 113 is protected, and electrical insulation from the outside is maintained.

  FIG. 1B is a diagram illustrating an example of the second substrate 200 on which electrode pads 204a as a plurality of second connection terminals are formed.

  The second substrate (circuit substrate or transfer destination substrate) 200 is connected to the wiring layer 212 and the electrode pad 120 on the first substrate 100 side on a substrate 210 made of glass or resin and having an appropriate strength. A protective film 214 that protects the electrode pad 204a and the wiring layer 212 is included. The protective film 214 is made of, for example, silicon oxide, resin, or the like, and also plays a role of electrically insulating the wiring layer 212 from the outside.

  FIG. 4 is a top view of the second substrate 200 used in this embodiment. As shown in FIG. 4, the second substrate 200 is provided with the number of electrode pads 204 a corresponding to the electrode pads 120 on the first substrate 100 side. On the second substrate 200, an electrode pad 204b for further transmitting a signal input to the electrode pad 204a to the outside is formed. On the second substrate 200, a plurality of units 220 including such electrode pads 204a and electrode pads 204b are formed vertically and horizontally.

  FIG. 1C is a diagram illustrating a bonding process between the first substrate 100 and the second substrate 200 as described above. As shown in FIG. 1C, the first substrate 100 and the second substrate 200 are overlapped with each other while being aligned with an adhesive layer 131 interposed therebetween.

  In the present embodiment, more specifically, an electrode pad 120 as a first connection terminal provided in a transfer target 130 to be transferred this time on the first substrate 100 and a second substrate 200 are provided. Further, the contact is made with the electrode pad 204a as the second connection terminal.

  As an adhesive used for the adhesive layer 131, an anisotropic conductive paste (ACP) containing conductive particles 132 is used. Such an adhesive is supplied to the bonding site by, for example, a dispenser, a droplet discharge method using an inkjet method, or the like.

  FIG. 2D is a diagram illustrating a pressing process of pressing the joined body of the first substrate 100 and the second substrate 200. As shown in FIG. 2D, a jig (not shown) having a protrusion 312 in a region corresponding to the current transfer target formation region 150 is formed from a current transfer target formation region 150 in which a transfer target 130 to be transferred this time is formed. Press using the pressing tool 300. At this time, heating may be performed as necessary. When a thermosetting resin is used as the adhesive, the adhesive can be cured by thermocompression bonding.

  Specifically, in the present embodiment, first, in the current transfer target forming region 150 of the joined body of the first substrate 100 and the second substrate 200, the protrusion 312 is formed at a portion corresponding to the current transfer target forming region 150. Alignment is performed so that the projection 312 of the jig 300 having a contact with each other, and the jig 300 is overlapped from the first substrate 100 side. Next, pressure is applied (pressed) from the first substrate 100 side through the jig 300 by, for example, inserting air into a rubber airbag in a closed space.

  The material constituting the jig 300 is not particularly limited. However, it is preferable to use a flexible material. When a large substrate is used as a substrate to be contacted (eg, the first substrate 100 or the second substrate 200), the substrate may be bent. In such a case, if the jig 300 is made of a flexible material, the shape of the jig 300 can also follow the bending of the substrate, so that the connecting portion can be reliably connected. Because it becomes.

  Here, examples of the flexible material include glass, rubber, and soft metal. From the viewpoint of being hard to break, a soft metal such as rubber or aluminum is preferable.

  The shape of the tip 314 of the projection 312 of the jig 300 is not particularly limited, and is appropriately determined according to the shape of the pressurizing region to which pressure is to be applied. Moreover, it is preferable that the front-end | tip part 314 of the projection part 312 is substantially flat. As a result, it is possible to apply pressure almost uniformly to a desired pressure region (for example, the current transfer target forming region 150). In addition, the size of the tip 314 of the protrusion 312 is approximately the same as or slightly larger than the pressure region from the viewpoint of applying a substantially uniform and sufficient pressure to the desired pressure region. It is preferable that

  The manufacturing method of the jig 300 is not particularly limited. For example, when manufacturing using a glass substrate or the like, pattern formation is performed using a photolithography technique so that the protrusions 312 have a desired arrangement pattern. Followed by etching or sand blasting. As a result, it is possible to form the jig 300 in which the protrusions 312 are accurately arranged at desired positions.

  FIG. 2E illustrates a light irradiation process to the peeling layer 112. As shown in FIG. 2E, the joined body of the first substrate 100 and the second substrate 200 is selected from the first substrate 100 side to the peeling layer 203 portion corresponding to the transfer target 130 to be transferred. The light L is irradiated. Thereby, peeling (in-layer peeling and / or interfacial peeling) is caused only in the peeling layer 112 supporting the thin film circuit chip to be transferred (transfer object 130).

  The principle that peeling within the peeling layer 112 and / or interfacial peeling occurs is that the constituent material of the peeling layer 112 is ablated, the gas contained in the peeling layer 112 is released, and further, the melting occurs immediately after irradiation. This is due to phase change such as transpiration.

  Here, the ablation means that the fixing material that absorbs the irradiation light (the constituent material of the peeling layer 112) is excited photochemically or thermally, and the surface or internal atom or molecule bond is cut and released. In general, all or part of the constituent material of the release layer 112 appears as a phenomenon that causes a phase change such as melting or transpiration (vaporization). In addition, the phase change may result in a fine foamed state, resulting in a decrease in bonding strength.

  Whether the peeling layer 112 causes in-layer peeling, interfacial peeling, or both depends on the composition of the peeling layer 112 and various other factors, and one of the factors is irradiation. Conditions such as the type of light, wavelength, intensity, and reaching depth are included.

  The light L to be irradiated may be any as long as it causes the release layer 112 to undergo in-layer peeling and / or interfacial peeling, and examples thereof include X-rays, ultraviolet rays, visible light, infrared rays, and laser light.

  Among these, laser light is preferable in that it is easy to cause peeling (ablation) of the peeling layer 112 and high-precision local irradiation is possible, and laser light having a wavelength of 100 nm to 350 nm is particularly preferable. By using the short-wavelength laser light in this manner, the light irradiation accuracy can be improved and the peeling in the peeling layer 112 can be effectively performed.

  An excimer laser is suitably used as a laser device that generates such laser light. Since the excimer laser outputs high energy in a short wavelength region, it can cause ablation in the peeling layer 112 in an extremely short time, thereby increasing the temperature of the adjacent first substrate 100, second substrate 200, and the like. The peeling layer 112 can be peeled off almost without causing deterioration or damage to the thin film circuit chip or the like.

  Alternatively, when the separation layer 112 is given separation characteristics by causing phase changes such as gas release, vaporization, and sublimation, the wavelength of the irradiated laser light is preferably about 350 nm to 1200 nm. Laser light of such a wavelength can use a laser light source and an irradiation device widely used in general processing fields such as YAG and gas laser, and light irradiation can be performed inexpensively and easily. Further, by using laser light having such a wavelength in the visible light region, the degree of freedom in selecting the first substrate 100 can be expanded.

Also, the energy density of the laser beam irradiated, particularly the energy density in the case of excimer lasers, it is preferable to be 10~5000mJ / cm ² or so, and more preferably, 100 to 500 mJ / cm ² or so. The irradiation time is preferably about 1 to 1000 nsec, more preferably about 10 to 100 nsec. As the energy density is higher or the irradiation time is longer, ablation or the like is likely to occur. On the other hand, as the energy density is lower or the irradiation time is shorter, the irradiation light transmitted through the peeling layer 112 is adversely affected. This is because the fear can be reduced.

  FIG. 2F is a diagram showing a transfer peeling step. As shown in FIG. 2F, the second substrate 200 is applied by applying a force to the first substrate (transfer source substrate) 100 and the second substrate (transfer destination substrate) 200 in a direction in which both are separated. The first substrate 100 is removed. Through the light irradiation step, the peeling layer 112 of the thin film circuit chip to be transferred (transfer object 130) is peeled off from the thin film circuit chip, and the thin film circuit chip to be transferred is secondly bonded via the adhesive layer 131. Since it is bonded to the substrate 200, transfer is easily performed.

  In the light irradiation step, it is desirable that the release layer 112 be completely peeled off, but the adhesive strength of the adhesive layer 131 of the thin film circuit chip to be transferred is more than the bonding strength of the remaining release layer 112. If the thin film circuit chip to be transferred is surely transferred to the first substrate 100 side when separating the first substrate 100 and the second substrate 200 as a result, a part of the peeling layer 112 is obtained. Only the peeling may be caused.

  As described above, the transfer of the transfer object is determined by the relative force relationship between the bonding force of the peeling layer 112 weakened by the peeling of the peeling layer 112 and the bonding force of the adhesive layer applied to the transfer object. If the peeling by the release layer is sufficient, the transferred object can be transferred even if the bonding force of the adhesive layer is weak. On the contrary, if the bonding force of the adhesive layer is high even if peeling by the peeling layer is insufficient, the transferred object is transferred. Is possible.

  Therefore, the first substrate 100 and the second substrate 200 are designed so that the bonding force between the layers (films) formed on both the substrates and the bonding layer 131 is stronger than the bonding force of the release layer 112. Is preferred.

  In this manner, the thin film circuit chip is transferred to a desired position on the second substrate 200 by separating the first substrate 100 from the second substrate 200. Thereafter, if necessary, the remainder of the peeling layer 112 adhering to the thin film circuit chip is removed by washing, etching, polishing, etc., and an insulating film (not shown) that covers the thin film circuit chip or the like is formed to implement the mounting structure. The body 500 is completed.

  According to the present embodiment, when the first substrate 100 and the second substrate 200 are joined, the jig 300 having the protrusion 312 is pressed at a position corresponding to the current transfer target formation region 150, so that the current transfer target It is possible to efficiently apply pressure only to the formation region 150. This makes it possible to reduce the pressure to be applied as compared with the case where pressure is applied to the entire surface of the conventional substrate, so the output of the pressurizing device used for pressurization may be low, Therefore, the manufacturing cost can be reduced.

  In addition, since the jig 300 having the protrusions 312 is used, pressure is applied only to necessary portions, so that damage caused by applying pressure to unnecessary portions can be reduced.

  In addition, when the jig 300 according to the present embodiment is used, in the region where the pressure of the first substrate 100 is not applied (non-pressurized region), distortion occurs at the boundary with the region where the pressure is applied (pressurized region). A light curve is created to create an arc on the outside. As a result, the distance between the first substrate 100 and the second substrate 200 is increased in the non-pressurized region, so that when the pressure is applied by the jig 300 of the present embodiment, the gap is provided between the electrode pads. Excess adhesive can be made difficult to spread around. Thereby, it is possible to prevent the excessive adhesive from spreading and adhering to unnecessary portions such as adjacent electrode pads. Therefore, it is possible to avoid problems such as a connection failure caused by an adhesive adhering to an electrode pad or the like used for connection with other components thereafter.

  In addition, by using the jig 300, the above-described curve is generated at the boundary between the pressurized region and the non-pressurized region of the first substrate 100, so that the release layer 112 may be distorted and cracks may occur. In this case, only the thin film circuit chip that is easily selected in the subsequent transfer peeling process can be peeled off.

  In the above example, the example in which the jig 300 is disposed on the first substrate 100 side and pressed is described. However, the present invention is not limited to this, and the jig 300 may be disposed and pressed on the second substrate 200 side. . Alternatively, the pressure may be applied to both the first substrate 100 and the second substrate 200. Note that, from the viewpoint of generating strain in the peeling layer 112 and facilitating the transfer peeling process, it is preferable that the peeling layer 112 be disposed on the first substrate 100 side.

  Further, in the present embodiment, the case has been described where the jig 300 having the protruding portion 312 having a size capable of pressing the entire region where the transfer target 130 (thin film circuit chip) to be transferred is formed is used. That is, the example in which the plurality of first connection terminals and the plurality of second connection terminals are pressurized simultaneously has been described. However, the present invention is not limited to this, and, for example, the protruding portion so that pressure is applied only to the connecting portion between one first connecting terminal (electrode pad 120) and one second connecting terminal (electrode pad 204a). 312 may be formed. FIG. 5 shows an example of a jig (pressure tool) according to another embodiment.

  Moreover, in the said example, although it pressed by the pressurization method using an airbag, it is not limited to this, You may carry out by a mechanical press or a pressure reduction press.

  In the above example, the anisotropic conductive paste (ACP) which is an adhesive containing the conductive particles 132 is used as the adhesive. However, the present invention is not limited to this, and a non-conductive paste (NCP) may be used. .

  The mounting structure manufactured by the manufacturing method of the mounting structure of the present embodiment can be further applied to a manufacturing method of an electro-optical device or an electronic device. For example, an organic EL display device can be manufactured by connecting the electrode pad 204b for external connection to the organic EL element.

  Specific examples of electro-optical devices and electronic apparatuses to which the present invention can be applied will be described with reference to FIGS. 6 and 7 are diagrams illustrating examples of various electronic apparatuses that include the electro-optical device 600 (eg, an organic EL display device).

  FIG. 6A shows an application example to a mobile phone, and the mobile phone 830 includes an antenna portion 831, an audio output portion 832, an audio input portion 833, an operation portion 834, and the electro-optical device 600 of the present invention. . FIG. 6B shows an application example to a video camera. The video camera 840 includes an image receiving unit 841, an operation unit 842, an audio input unit 843, and an electro-optical device 600. FIG. 6C shows an application example to a portable personal computer (so-called PDA). The computer 850 includes a camera unit 851, an operation unit 852, and an electro-optical device 600. FIG. 6D shows an application example to a head-mounted display. The head-mounted display 860 includes a band 861, an optical system storage portion 862, and an electro-optical device 600.

  FIG. 7A illustrates an application example to a television, and the television 900 includes an electro-optical device 600. The electro-optical device 600 can be similarly applied to a monitor device used for a personal computer or the like. FIG. 7B illustrates an application example to a roll-up television, and the roll-up television 910 includes an electro-optical device 600.

  In the above example, the organic EL display device is described as an example of the electro-optical device. However, the present invention is not limited to this, and other various electro-optical devices (for example, plasma light-emitting device, electrophoretic device, liquid crystal device) It is also possible to apply to an electro-optical device manufacturing method configured by The scope of application of the present invention is not limited to the electro-optical device and the manufacturing method thereof, and can be widely applied to various devices formed using a transfer technique. The electro-optical device is not limited to the above-described example, and can be applied to various electronic devices such as a fax machine with a display function, a digital camera finder, a portable TV, and an electronic notebook.

FIG. 1 is a process diagram for explaining the mounting structure manufacturing method of the present embodiment. FIG. 2 is a process diagram for explaining the manufacturing method of the mounting structure according to the present embodiment. FIG. 3 is a top view of the first substrate used in this embodiment. FIG. 4 is a top view of the second substrate used in this embodiment. FIG. 5 shows an example of a jig (pressure tool) according to another embodiment. FIG. 6 is a diagram illustrating examples of various electronic apparatuses including an electro-optical device (eg, an organic EL display device). FIG. 7 is a diagram illustrating examples of various electronic apparatuses that include an electro-optical device (eg, an organic EL display device).

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... 1st board | substrate, 102 ... Thin-film transistor part, 110 ... Board | substrate, 112 ... Release layer, 113 ... Wiring layer, 120 ... Electrode pad, 130 ... Transfer object 131 ... Adhesive layer, 132 ... Conductive particles, 150 ... Current transfer target forming region, 200 ... Second substrate, 203 ... Release layer, 204a ... Electrode pad, 204b ... Electrode pads, 210 ... Substrate, 212 ... Wiring layer, 214 ... Protective film, 220 ... Unit, 300 ... Jig, 312 ... Projection, 314 ... Tip Part, 500 ... mounting structure, 600 ... electro-optical device

Claims (15)

A manufacturing method of a mounting structure for connecting a plurality of first connection terminals formed on a first substrate and a plurality of second connection terminals formed on a second substrate,
The connection portion between the first connection terminal selected from the plurality of first connection terminals and the second connection terminal selected from the plurality of second connection terminals is higher than the region other than the connection portion. The manufacturing method of the mounting structure characterized by including the press process to press.   The manufacturing method of the mounting structure according to claim 1, wherein the pressing step is a step of pressing using a jig having a protrusion at a portion corresponding to the connection portion.   The said pressing process is a process of joining the selected 1st connecting terminal and the selected 2nd connecting terminal via an anisotropic conductive paste, and pressing. A method for manufacturing the mounting structure according to 2. The first substrate is a transfer source substrate including a thin film circuit chip for peeling and transferring to a transfer destination substrate;
The second substrate is a transfer destination substrate onto which the thin film circuit chip is transferred;
The manufacturing method of the mounting structure according to any one of claims 1 to 3, further comprising a peeling transfer step of peeling and transferring the thin film circuit chip from the transfer source substrate to the transfer destination substrate after the pressing step.   The manufacturing method of the mounting structure according to any one of claims 1 to 4, wherein the jig is disposed on either the first substrate side or the second substrate side when pressed.   The manufacturing method of the mounting structure according to any one of claims 1 to 4, wherein the jig is disposed on both sides of the first substrate and the second substrate when pressed.   The manufacturing method of the mounting structure according to any one of claims 1 to 6, wherein a size of a tip portion of the protruding portion of the jig is substantially the same as a size of the connection portion. A method of transferring a plurality of transfer objects provided on a first substrate to a second substrate,
Bonding the first substrate and the second substrate;
Pressurizing a current transfer target forming region in which a transfer target to be transferred this time among the plurality of transferred materials is formed at a pressure higher than a region other than the current transfer target forming region;
By separating the first substrate and the second substrate, the transferred object to be transferred this time among the transferred objects formed on the first substrate is peeled and transferred to the second substrate side. Process,
A transfer method of a transfer object, comprising:   A first connection terminal is formed on the transfer object, a second connection terminal is formed on the second substrate, and the pressurizing step further includes the first connection terminal and the second connection terminal. The transfer method according to claim 8, which is a step of selectively pressurizing only a connection portion with the second connection terminal. A jig used when connecting a plurality of first connection terminals formed on a first substrate and a plurality of second connection terminals formed on a second substrate,
Providing a protrusion at a portion corresponding to a connection portion between the first connection terminal selected from the plurality of first connection terminals and the second connection terminal selected from the plurality of second connection terminals. A featured jig.   The jig according to claim 10, wherein the jig is formed from a flexible material.   The jig according to claim 11, wherein the flexible material is glass, rubber, or a soft metal.   The jig according to claim 12, wherein the soft metal is aluminum.   The jig according to any one of claims 10 to 13, wherein a size of a tip portion of the protruding portion is substantially the same as a size of the connection portion. The projection pattern is selected from a first connection terminal selected from a plurality of first connection terminals formed on the first substrate and a second connection terminal formed from a plurality of second connection terminals formed on the second substrate. A method for manufacturing a jig, wherein the arrangement pattern of the protrusions is formed by photolithography so as to be arranged at a portion corresponding to a connection portion with two connection terminals.

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