JP2005202102A - Mask for exposure, pattern correction method therefor, and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask pattern correction method suppressing shortening of pattern ends and arranging the patterns in proximity to each other with respect to a mask for exposure and a pattern correction method therefor, and also to provide the mask for exposure having the mask patterns corrected by using the mask pattern correction method. <P>SOLUTION: The mask has the first mask patterns 12 having the first ends and the second mask patterns 14 having the second ends facing the first ends. The first mask patterns 12 are subjected to the correction to add the auxiliary patterns 12b of the width narrower than the width at the ends of the main patterns 12a at the ends of the main patterns 12a which are the mask data prior to the correction. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a pattern correction method for an exposure mask that suppresses the optical proximity effect, an exposure mask having a mask pattern corrected by the pattern correction method, and a method for manufacturing a semiconductor device using the exposure mask.

  Miniaturization of a semiconductor device is realized by shortening the light source wavelength of an exposure apparatus used for photolithography. At present, an argon fluoride (ArF) excimer laser having a wavelength of 0.193 μm has been used as a light source, and the rule of semiconductor devices has reached a level of 0.1 μm or less, which is shorter than this wavelength.

  When a pattern exceeding the resolution limit of the exposure wavelength is transferred onto the substrate in this way, the position and shape of the edge of the pattern formed on the substrate changes due to the influence of the optical proximity effect due to diffraction, etc. There is a difference between the dimension of the pattern and the dimension of the pattern transferred onto the substrate.

  For example, when a pattern is transferred onto a substrate using an exposure mask having mask patterns 102 and 104 as shown in FIG. 11A, the resolution limit is reached at the end of the pattern, and the transferred patterns 102 'and 104' are transferred. As shown in FIG. 11B, the end portion is shortened. This phenomenon is called shortening. Shortening appears more prominently as the pattern width becomes narrower.

  Therefore, various methods for suppressing such an optical proximity effect have been proposed. As one of them, a method for correcting an optical proximity effect called OPC (Optical Proximity Correction) is described in, for example, Patent Documents 1 to 3 and the like. OPC is a pattern transferred onto a substrate by partially thickening the mask pattern or arranging a dummy pattern in a direction opposite to the deformation direction of the pattern that occurs when the mask pattern is transferred onto the substrate. This is a method of correcting the shape and dimensions of the.

Specifically, for example, as shown in FIG. 12A, a pattern called a hammer head in which correction patterns 102a are provided on both side surfaces of the end portion of the mask pattern 102, or as shown in FIG. 12B, for example. By providing the correction pattern 102b in which the length of the end portion of the mask pattern 100 is uniformly extended, a change in the shape of the transfer pattern such as shortening can be suppressed.
Japanese Patent Laid-Open No. 10-289861 JP 2001-356465 A JP 2002-250999 A

  However, when another mask pattern is present near the edge of the mask pattern, shortening is reduced by the optical proximity effect as the distance between the mask patterns approaches. For this reason, when a pattern is transferred using a mask pattern 102 provided with the auxiliary pattern 102a or the auxiliary pattern 102b and an exposure mask having a mask pattern 104 adjacent thereto, the pattern extends in the opposite direction to the shortening, and the pattern 102 ', 104 'may be connected to each other (see FIG. 12C). Therefore, in order to correct the mask pattern by OPC, it is necessary to design a pattern with a sufficient margin in the interval between the mask pattern ends, which increases the chip area.

  An object of the present invention is to provide a mask pattern correction method capable of suppressing pattern edge shortening and arranging patterns close to each other, an exposure mask having a mask pattern corrected using such a mask pattern correction method, and Another object of the present invention is to provide a method of manufacturing a semiconductor device using such an exposure mask.

  According to one aspect of the present invention, an exposure having a mask pattern subjected to correction for adding an auxiliary pattern having a width smaller than that of the end of the main pattern to the end of the main pattern which is mask data before correction. A mask is provided.

  According to still another aspect of the present invention, a first mask pattern having a first end portion and a second mask pattern having a second end portion facing the first end portion are provided. And the width of the second end is wider than the width of the first end, and the length of the protruding portion of the second end with respect to the first end is the first end An exposure mask that is 1/3 or less of the width is provided.

  According to still another aspect of the present invention, an exposure mask for performing correction by adding an auxiliary pattern narrower than the end of the main pattern to the end of the main pattern which is mask data before correction. A pattern correction method is provided.

  According to still another aspect of the present invention, a first mask pattern having a first end portion and a second mask pattern having a second end portion facing the first end portion are provided. An exposure mask pattern correction method, wherein a width of the second end portion is wider than a width of the first end portion, and a protruding portion of the second end portion with respect to the first end portion There is provided a pattern correction method for an exposure mask in which the first mask pattern and the second mask pattern are arranged so that the length of the first mask pattern is equal to or less than 1/3 of the first width.

  According to still another aspect of the present invention, a mask subjected to correction for adding an auxiliary pattern having a width narrower than that of the end of the main pattern to the end of the main pattern which is mask data before correction. There is provided a method for manufacturing a semiconductor device including a step of performing exposure using an exposure mask having a pattern.

  According to the present invention, the first mask pattern having the first end portion having the first width and the second end portion having the second width disposed in parallel adjacent to the first end portion are provided. In the exposure mask having the second mask pattern, the auxiliary pattern having a width smaller than the first width is provided at the first end of the main pattern of the first mask pattern, so that shortening is prevented. The mask patterns can be arranged close to each other. As a result, the pattern density increases, and as a result, the chip area can be reduced.

  Also, the first mask pattern having the first end of the first width and the second width wider than the first width are arranged in parallel adjacent to the first end. In the exposure mask having the second mask pattern having the second end portion, the length of the protruding portion of the second end portion with respect to the first end portion is set to 1/3 or less of the first width. Therefore, the adjacent mask patterns can be arranged at the same distance as the I-shaped pattern. As a result, the pattern density increases, and as a result, the chip area can be reduced.

[First Embodiment]
An exposure mask and its pattern correction method according to the first embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a plan view showing an exposure mask according to the present embodiment, FIG. 2 is a plan view showing another exposure mask according to the present embodiment, and FIG. 3 is a diagram showing a mask pattern interval on the exposure mask and transferred onto a substrate. It is a graph which shows the relationship with the space | interval of a pattern.

  FIG. 1A is a plan view showing a mask pattern of the exposure mask according to the present embodiment.

  As shown in FIG. 1A, a mask pattern 12 extending in the y direction and a mask pattern 14 extending in the x direction are provided on the quartz substrate 10 so as to face the end portions of the mask pattern 12. And are formed. Note that the exposure mask according to the present embodiment takes into consideration a pattern arrangement generally called a T-shaped pattern. In other words, it is assumed that the width of the mask pattern 14 at the portion facing the mask pattern 12 is wider than the width of the mask pattern 12. The mask pattern 14 does not necessarily need to be a pattern extending in the x direction, and may be a pattern wider than the mask pattern 12 extending in the y direction.

  FIG.1 (b) is an enlarged view of the dotted-line part of Fig.1 (a).

  As shown in FIG. 1B, the mask pattern 12 includes a rectangular main pattern 12a extending in the y direction, and an auxiliary pattern 12b provided at an end of the main pattern 12a and narrower than the main pattern 12a. And have. When the width of the main pattern 12a is 120 nm, for example, the auxiliary pattern 12b can have a width in the x direction of 80 nm and a length in the y direction of 20 nm, for example. The mask pattern 14 is provided close to the end of the mask pattern 12, and the distance between the mask pattern 12 and the mask pattern 14 is 60 nm, for example. These dimensions are converted into finished dimensions, and the actual dimensions on the exposure mask are reciprocal times (for example, four times) the reduction ratio of the reduction projection exposure apparatus.

  As described above, the exposure mask according to the present embodiment attaches the auxiliary pattern 12b having a width narrower than the width of the main pattern 12a to the end of the main pattern 12a. Pattern correction is performed.

  As shown in FIG. 1B, only one auxiliary pattern may be provided at the end of the main pattern 12a, or two or more auxiliary patterns may be provided. For example, an auxiliary pattern 12c as shown in FIG. 2A can be provided at the end of the main pattern 12a.

  The auxiliary pattern may be any pattern that is narrower than the width of the main pattern 12a. In addition to the rectangular pattern as shown in FIGS. 1B and 2A, the auxiliary pattern has a triangular shape as shown in FIG. The auxiliary pattern 12d may be used. In addition, as shown in FIG. 2C, two or more triangular auxiliary patterns 12e may be provided. Alternatively, as shown in FIG. 2D, a pattern such as an auxiliary pattern 12f whose width is gradually reduced toward the tip may be used. In the specification of the present application, the expression “an auxiliary pattern having a width smaller than that of the main pattern” includes these shapes.

  FIG. 1C is a plan view showing a result obtained by simulation of a pattern transferred onto a substrate using the exposure mask of FIG. FIG. 1C shows a simulation result in the case where the mask patterns 12 and 14 are blank patterns, but the effect on the transferred pattern is almost the same in the case of the remaining patterns.

  As shown in FIG. 1C, a pattern 22 formed by transferring the mask pattern 12 and a pattern 24 formed by transferring the mask pattern 14 are formed on the substrate 20. The pattern 22 and the pattern 24 are separated without being connected.

  On the other hand, with respect to the mask pattern (FIG. 12 (a)) subjected to hammerhead type optical proximity effect correction and the mask pattern (FIG. 12 (b)) subjected to optical proximity correction to uniformly extend the mask pattern, When the same simulation was performed with the main pattern interval being the same as that of the exposure mask shown in FIG. 1A, the adjacent patterns 102 ′ and 104 ′ were connected as shown in FIG. 12C. .

  Thus, it can be seen that the exposure mask according to the present embodiment is extremely effective in preventing the connection of adjacent patterns due to the optical proximity effect.

  FIG. 3A is a graph showing the relationship between the mask pattern interval on the exposure mask and the pattern interval transferred onto the substrate. In the figure, ▲ indicates a conventional hammerhead type mask pattern with optical proximity effect correction, ■ indicates a mask pattern without optical proximity effect correction, and ♦ indicates a book as shown in FIG. In the case of the mask pattern subjected to the optical proximity effect correction of the invention, the mark X is the case of the mask pattern subjected to the optical proximity effect correction of the present invention shown in FIG. 2A (see FIG. 3B).

  The solid line shows the case where there is no optical proximity effect, that is, the case where the interval between the mask patterns on the exposure mask is equal to the interval between the patterns transferred onto the substrate. The fact that the slope of the curve is almost parallel to this solid line means that the interval of the pattern transferred onto the substrate changes depending on the interval of the mask pattern on the exposure mask, and the adjacent pattern It can be said that the influence of is suppressed.

  As shown in the drawing, in any case, when the interval between the mask patterns on the exposure mask is wide (for example, 80 nm), the plot is located above the solid line, and it can be seen that shortening occurs. . However, when the optical proximity effect correction according to the present invention is performed (marked with ♦) and when the optical proximity effect correction with a hammerhead type auxiliary pattern is performed (marked with ▲), the optical proximity effect correction is not performed (■ The interval of the pattern transferred onto the substrate is narrower than that of the mark, indicating that shortening is suppressed.

  As the distance between the mask patterns on the exposure mask is reduced, the distance between the patterns transferred onto the substrate is also reduced, but the degree varies greatly depending on the optical proximity correction method.

  When optical proximity effect correction is not performed (marked with ■), the amount of shortening decreases rapidly when the mask pattern interval approaches 70 nm, and the slope of the curve is larger than when there is no optical proximity effect (solid line). It has become. This means that when the mask pattern interval is about 70 nm or less, an optical proximity effect in which the adjacent pattern influences appears.

  When the optical proximity effect correction with a hammerhead-type auxiliary pattern is performed (marked with ▲), the amount of shortening decreases sharply when the mask pattern interval is about 70 nm or less, and the optical proximity affects the adjacent pattern. It can be seen that the effect is greater than when no pattern correction is performed. Therefore, when performing optical proximity effect correction using a hammerhead-type auxiliary pattern, it is necessary to widen the pattern interval compared to when pattern correction is not performed.

  On the other hand, when the optical proximity effect correction of the present invention is performed (♦ mark, x mark), the amount of shortening decreases rapidly when the mask pattern interval is about 60 nm or less, and the proximity effect correction is not performed. It can be seen that the optical proximity effect affected by the adjacent pattern is less likely to occur than in the case (■ mark) and when the hammerhead type optical proximity effect correction is performed (▲ mark).

  Therefore, by using the exposure mask pattern correction method according to the present embodiment, the mask patterns can be arranged closer to each other. As a result, the pattern density increases, and as a result, the chip area can be reduced.

  As described above, according to the present embodiment, in the exposure mask having a T-shaped pattern, the auxiliary pattern having a narrower width than the main pattern is arranged at the end of the main pattern of the mask pattern. Patterns can be placed close together. As a result, the pattern density increases, and as a result, the chip area can be reduced.

  In the above embodiment, the auxiliary pattern 12a is provided only at the end of the mask pattern 12 on the mask pattern 14 side. However, the auxiliary pattern 12a may be provided at the opposite end. Thereby, shortening can be suppressed at both ends of the mask pattern 12.

[Second Embodiment]
An exposure mask and its pattern correction method according to the second embodiment of the present invention will be described with reference to FIGS. The same components as those in the exposure mask and the pattern correction method according to the first embodiment shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof is omitted or simplified.

  FIG. 4 is a plan view showing the exposure mask according to the present embodiment, and FIG. 5 is a graph showing the relationship between the interval of the mask pattern on the exposure mask and the interval of the pattern transferred onto the substrate.

  As shown in FIG. 4, mask patterns 16 and 18 extending in the y direction are provided on the quartz substrate 10. The mask pattern 16 and the mask pattern 18 have the same width, and are arranged so that the end portions face each other. The exposure mask according to the present embodiment takes into consideration a pattern arrangement generally called an I-shaped pattern. That is, it is assumed that two patterns extending along one axis are provided adjacent to each other.

  The mask pattern 16 has a rectangular main pattern 16a extending in the y direction, and an auxiliary pattern 16b that is provided at an end of the main pattern 16a facing the mask pattern 18 and is narrower than the main pattern 16a. ing. When the width of the main pattern 16a is 120 nm, for example, the auxiliary pattern 16b can have a width in the x direction of 80 nm and a length in the y direction of 20 nm, for example.

  Similarly, the mask pattern 18 includes a rectangular main pattern 18a extending in the y direction, and an auxiliary pattern 18b that is provided at an end of the main pattern 18a facing the mask pattern 16 and is narrower than the main pattern 18a. have. When the width of the main pattern 18a is 120 nm, for example, the auxiliary pattern 18b can have a width in the x direction of 80 nm and a length in the y direction of 20 nm, for example.

  The mask pattern 16 and the mask pattern 18 are arranged so that the distance between the main pattern 16a and the main pattern 18a is, for example, 35 nm. These dimensions are converted into finished dimensions, and the actual dimensions on the exposure mask are reciprocal times (for example, four times) the reduction ratio of the reduction projection exposure apparatus.

  As described above, the exposure mask according to the present embodiment has an uncorrected mask pattern, i.e., the adjacent end portions of the main patterns 16a and 18a in the mask pattern constituting the I-shaped pattern, based on the width of the main patterns 16a and 18a. Also, the pattern correction for attaching the auxiliary patterns 16b and 18b having a narrow width is performed.

  FIG. 5A is a graph showing the relationship between the mask pattern interval on the exposure mask and the pattern interval transferred onto the substrate. In the figure, ■ indicates a mask pattern without optical proximity effect correction, ▲ indicates a conventional hammerhead type mask pattern with optical proximity effect correction, and ◆ indicates a light of the present invention shown in FIG. This is a case of a mask pattern subjected to proximity effect correction (see FIG. 5B). The solid line shows the case where there is no optical proximity effect, that is, the case where the interval between the mask patterns on the exposure mask is equal to the interval between the patterns transferred onto the substrate.

  As shown in the drawing, in any case, when the interval between the mask patterns on the exposure mask is wide (for example, 80 nm), the plot is located above the solid line, and it can be seen that shortening occurs. . However, when the optical proximity effect correction according to the present invention is performed (marked with ♦) and when the optical proximity effect correction with a hammerhead type auxiliary pattern is performed (marked with ▲), the optical proximity effect correction is not performed (■ The interval of the pattern transferred onto the substrate is narrower than that of the mark, indicating that shortening is suppressed. As is clear from the comparison between FIG. 3 and FIG. 5, the shortening is larger in the case of the I-shaped pattern than in the case of the T-shaped pattern.

  As the distance between the mask patterns on the exposure mask is reduced, the distance between the patterns transferred onto the substrate is also reduced, but the degree varies greatly depending on the optical proximity correction method.

  When optical proximity effect correction is not performed (marked with ■), the amount of shortening decreases sharply when the mask pattern interval approaches 30 nm, and the slope of the curve is larger than when there is no optical proximity effect (solid line). It has become. This means that when the mask pattern interval is about 30 nm or less, an optical proximity effect in which the adjacent pattern influences appears.

  When the optical proximity effect correction with a hammerhead-type auxiliary pattern is performed (marked with ▲), the amount of shortening decreases drastically when the mask pattern interval is about 40 nm or less. It can be seen that the effect is greater than when no pattern correction is performed. Therefore, when performing optical proximity effect correction using a hammerhead-type auxiliary pattern, it is necessary to widen the pattern interval compared to when pattern correction is not performed.

  On the other hand, when the optical proximity effect correction of the present invention is performed (marked by ◆), the sharpening amount does not rapidly decrease until the mask pattern interval is about 30 nm, and the proximity effect correction is not performed ( It can be seen that the optical proximity effect affected by the adjacent pattern is less likely to occur than when the optical proximity effect correction of (3) and hammerhead type is performed (▲).

  Therefore, even in the case of an exposure mask having an I-shaped pattern, the mask pattern can be disposed closer by using the exposure mask pattern correction method according to the present embodiment. As a result, the pattern density increases, and as a result, the chip area can be reduced.

  As described above, according to the present embodiment, in the exposure mask having an I-shaped pattern, the auxiliary pattern narrower than the main pattern is arranged at the end of the main pattern of the mask pattern. Patterns can be placed close together. As a result, the pattern density increases, and as a result, the chip area can be reduced.

  In the above embodiment, both the mask pattern 16 and the mask pattern 18 are subjected to pattern correction. However, pattern correction may be performed on only one of the mask patterns.

[Third Embodiment]
An exposure mask and its pattern correction method according to a third embodiment of the present invention will be described with reference to FIGS. The same components as those in the exposure mask and the pattern correction method according to the first and second embodiments shown in FIGS. 1 to 5 are denoted by the same reference numerals, and description thereof is omitted or simplified.

  FIG. 6 is a plan view showing an exposure mask according to the present embodiment, FIG. 7 is a plan view showing a result obtained by simulation of a pattern transferred onto a substrate, and FIG. 8 is a length A of an overhang portion and a distance between transferred patterns. It is a graph which shows the relationship.

  As shown in FIG. 6, on the quartz substrate 10, a mask pattern 12 extending in the y direction and a mask pattern 14 provided facing the end of the mask pattern 12 and extending in the x direction are formed. Has been.

  The length of the mask pattern 14 extending in the x direction is asymmetric with respect to the mask pattern 12. That is, in FIG. 6, the length A of the overhanging portion of the mask pattern 14 protruding to the right side of the mask pattern 12 is shorter than the length B of the overhanging portion of the mask pattern 12 protruding to the left side. . Specifically, the mask pattern 14 protrudes from the right side of the mask pattern 12 by 40 nm, which is 1/3 of the width of the mask pattern 12. The length A of the protruding portion of the mask pattern 14 is preferably set to 1/3 or less of the width of the mask pattern 12.

  As described above, the exposure mask according to the present embodiment is arranged so that the mask pattern 12 and the mask pattern 14 form a T-shaped pattern, and the length A of the protruding portion of the mask pattern 14 is set to be the mask pattern 12. It is characterized by being 1/3 or less of the width.

  FIG. 7 is a plan view showing a result obtained by simulating a pattern transferred onto a substrate. FIG. 7 shows a plan view when the length A of the overhanging portion of the mask pattern 14 is changed. In FIG. 7A, FIG. 7B, and FIG. Length A is longer.

  As shown in the drawing, as the length A of the protruding portion of the mask pattern 14 is longer, the amount of shortening is smaller. In FIG. 8C, the pattern 22 and the mask pattern 14 formed by transferring the mask pattern 12 are transferred. The pattern 24 thus formed is connected. This is because when the length A of the overhanging portion is short, the amount of shortening is large because it is close to the I-shaped pattern. Because it becomes.

  FIG. 8 is a graph showing the relationship between the length A of the protruding portion of the mask pattern 14 and the interval between the patterns 22 and 24 transferred onto the substrate.

  As shown in the figure, when the length A of the overhanging portion is about 40 nm or less, the distance between the transferred patterns 22 and 24 is as wide as 140 nm or more, and can be handled almost the same as the case of the I-shaped pattern. . On the other hand, it can be seen that when the length A of the overhanging portion exceeds about 40 nm, the interval between the transferred patterns is abruptly reduced and the amount of shortening is reduced.

  Here, the dependency of the interval between the transferred patterns on the length A of the overhanging portion is greatly related to the width of the mask pattern 12. Therefore, it is desirable to define the length A of the overhanging portion from the relationship with the width of the mask pattern 12. In the above case, when the length A of the overhanging portion was about 40 nm or less, which is 1/3 or less of the width of the mask pattern 12, it was almost equivalent to the case of the I-shaped pattern. Therefore, it is considered that the length A of the overhanging portion is desirably 1/3 or less of the width of the mask pattern 12.

  That is, even when a pattern arrangement that approximates a T-shaped pattern is adopted, the length A of the overhanging portion of the mask pattern 14 is set to 1/3 or less of the width of the mask pattern 12, so that the mask pattern 12 and the mask pattern 14 Even if the distance between the pattern 12 'and the pattern 14' is not connected, the pattern can be transferred onto the substrate.

  Therefore, by using the exposure mask pattern correction method according to the present embodiment, the mask patterns can be arranged closer to each other. As a result, the pattern density increases, and as a result, the chip area can be reduced.

  As described above, according to the present embodiment, the first mask pattern having the first end portion having the first width, the second width wider than the first width, and the first end portion. In the exposure mask having the second mask pattern having the second end portion arranged in parallel adjacent to the first end portion, the length of the protruding portion of the second end portion with respect to the first end portion is set to the first mask length. Therefore, adjacent mask patterns can be arranged at the same distance as the I-shaped pattern. As a result, the pattern density increases, and as a result, the chip area can be reduced.

  In the above embodiment, the length A of the overhanging portion on one side of the mask pattern 14 is 1/3 or less of the width of the mask pattern 12, but the lengths A and B of the overhanging portion of the mask pattern 14 are respectively The width of the mask pattern 12 may be 1/3 or less.

  Moreover, in the said embodiment, although the auxiliary pattern is not provided in a mask pattern, you may provide the auxiliary pattern similar to the mask for exposure by 1st Embodiment, for example in the mask pattern side edge part of a mask pattern. Thereby, a mask pattern can be arrange | positioned more closely.

[Fourth Embodiment]
An exposure mask and its pattern correction method according to the fourth embodiment of the present invention will be described with reference to FIGS. The same components as those in the exposure mask and the pattern correction method according to the first to third embodiments shown in FIGS. 1 to 8 are denoted by the same reference numerals, and description thereof will be omitted or simplified.

  FIG. 9 is a plan view showing a result obtained by simulation of the pattern transferred onto the exposure mask and the substrate according to the present embodiment, and FIG. 10 shows a result obtained by simulation of the pattern transferred onto the conventional exposure mask and the substrate. FIG.

  FIG. 9A is a plan view showing the arrangement of the mask pattern in the exposure mask according to the present embodiment.

  As shown in FIG. 9A, square mask patterns 32 and 34 are formed on the quartz substrate 10. The mask pattern 34 has the same size as the mask pattern 32, but is inclined by 45 degrees with respect to the mask pattern 32. That is, the mask pattern 34 is arranged so that the diagonal direction is perpendicular to the end of the mask pattern 32.

  In the case of a square mask pattern, placing the pattern inclined by 45 degrees has the same effect as providing a triangular auxiliary pattern at the end of the pattern. That is, a corner portion of a pattern adjacent to another pattern functions as an auxiliary pattern for correcting the optical proximity effect. Therefore, by arranging the mask pattern 34 adjacent to the mask pattern 32 at an inclination of 45 degrees with respect to the mask pattern 32, the mask patterns 32 and 34 can be arranged closer to each other than when adjacent in the same direction. it can.

  FIG. 9B is a plan view showing a result obtained by simulating a pattern formed on the substrate using the exposure mask of FIG. 9A.

  As shown in the figure, the pattern 42 formed by transferring the mask pattern 32 and the pattern 44 formed by transferring the mask pattern 34 are not connected, and independent patterns 42 and 44 can be formed.

  On the other hand, in FIGS. 10A and 10B, a plan view showing the arrangement of mask patterns when square mask patterns of the same direction are adjacent to each other and a pattern transferred onto the substrate were obtained by simulation. It is a top view which shows a result.

  The interval between the mask pattern 36 and the mask pattern 38 in the exposure mask shown in FIG. 10A is the same as the interval between the mask pattern 32 and the mask pattern 34 in the exposure mask shown in FIG. However, as apparent from FIG. 10B, the pattern formed by transferring the mask pattern 36 and the pattern formed by transferring the mask pattern 38 are connected to each other, and one pattern 46 is formed.

  As described above, when the square mask patterns are arranged adjacent to each other, the mask pattern interval can be narrowed by arranging the adjacent mask patterns inclined by 45 degrees.

  As described above, according to this embodiment, in the exposure mask in which the square mask patterns are arranged adjacent to each other, the adjacent mask patterns are arranged so as to be inclined by 45 degrees from each other. Can be placed in close proximity. As a result, the pattern density increases, and as a result, the chip area can be reduced.

  In the above-described embodiment, adjacent mask patterns are arranged so as to be inclined by 45 degrees from each other, but need not necessarily be 45 degrees. If the side of one mask pattern is arranged so that the corners of the other mask pattern face each other, the effect of the present embodiment can be achieved.

[Modified Embodiment]
The present invention is not limited to the above embodiment, and various modifications can be made.

  For example, in the first and second embodiments, the pattern correction method in the case where the mask patterns are provided adjacent to each other has been described. However, the present invention can also be applied when the mask pattern is an isolated pattern. That is, the auxiliary pattern of the present invention has an effect of preventing the shortening of the pattern transferred to the substrate, and the shortening can be prevented by providing the auxiliary pattern of the present invention in the isolated pattern.

  In the fourth embodiment, the case where the square mask patterns are adjacent to each other has been described as an example. However, the square mask adjacent to the end of the stripe mask pattern 12 as shown in the first embodiment is used. A pattern may be provided. Even in such a case, the same effect can be obtained by inclining and arranging the square mask pattern.

  As detailed above, the characteristics of the present invention are summarized as follows.

  (Additional remark 1) It has the mask pattern by which the correction which adds the auxiliary pattern narrower than the said edge part of the said main pattern to the edge part of the main pattern which is the mask data before correction | amendment was given Mask.

(Supplementary Note 2) a first mask pattern having a first end;
A second mask pattern having a second end facing the first end,
The first mask pattern is subjected to correction for adding an auxiliary pattern having a narrower width than the end of the main pattern to the end of the main pattern which is mask data before correction. Mask for exposure.

(Appendix 3) In the exposure mask according to claim 2,
An exposure mask characterized in that the width of the second end is wider than the width of the first end.

(Appendix 4) In the exposure mask according to claim 3,
The length of the protruding portion of the second end portion with respect to the first end portion is 1/3 or less of the first width.

(Appendix 5) In the exposure mask according to claim 2,
The second mask pattern is subjected to correction for adding an auxiliary pattern having a width narrower than that of the end of the main pattern to the end of the main pattern which is mask data before correction. Mask for exposure.

(Appendix 6) In the exposure mask according to any one of claims 2 to 5,
The auxiliary mask has at least one rectangular pattern. An exposure mask.

(Appendix 7) In the exposure mask according to any one of claims 2 to 5,
The auxiliary mask has a triangular pattern. An exposure mask.

(Supplementary note 8) a first mask pattern;
A rectangular second mask pattern provided to face an end of the first mask pattern;
The exposure mask, wherein the second mask pattern is arranged so that a diagonal direction is perpendicular to the end portion of the first mask pattern.

(Supplementary note 9) a first mask pattern having a first end;
A second mask pattern having a second end facing the first end,
The width of the second end portion is wider than the width of the first end portion, and the length of the protruding portion of the second end portion with respect to the first end portion is equal to 1 of the first width. / 3 or less exposure mask.

  (Supplementary Note 10) A pattern correction method for an exposure mask, wherein correction is performed by adding an auxiliary pattern having a width narrower than that of the end of the main pattern to an end of the main pattern which is mask data before correction. .

(Additional remark 11) By the pattern correction method of the mask for exposure which has the 1st mask pattern which has a 1st edge part, and the 2nd mask pattern which has a 2nd edge part which opposes the said 1st edge part There,
A correction for adding an auxiliary pattern having a narrower width than the end of the main pattern to the end of the main pattern, which is mask data before correction of the first mask pattern, is performed. Pattern correction method.

(Additional remark 12) It is a pattern correction method of the exposure mask which has a 1st mask pattern and the 2nd rectangular mask pattern provided so that the edge part of the said 1st mask pattern might be opposed,
The exposure mask pattern, wherein the second mask pattern is arranged so that a diagonal direction of the second mask pattern is perpendicular to the end portion of the first mask pattern. Correction method.

(Additional remark 13) It has a 1st mask pattern which has a 1st edge part, and a 2nd mask pattern which has a 2nd edge part which opposes the said 1st edge part, The said 2nd edge part Is a pattern correction method for an exposure mask that is wider than the width of the first end,
The first mask pattern and the second mask pattern so that the length of the protruding portion of the second end portion with respect to the first end portion is 1/3 or less of the first width. An exposure mask pattern correction method characterized by comprising:

(Appendix 14)
A step of performing exposure using an exposure mask having a mask pattern subjected to correction for adding an auxiliary pattern narrower than the end of the main pattern to the end of the main pattern which is mask data before correction. A method for manufacturing a semiconductor device, comprising:

It is a top view which shows the result of having calculated | required the pattern transcribe | transferred on the exposure mask and board | substrate by 1st Embodiment of this invention by simulation. It is a top view which shows the other mask for exposure by 1st Embodiment of this invention. It is a graph which shows the relationship between the space | interval of the mask pattern on an exposure mask, and the space | interval of the pattern transcribe | transferred on the board | substrate. It is a top view which shows the mask for exposure by 2nd Embodiment of this invention. It is a graph which shows the relationship between the space | interval of the mask pattern on an exposure mask, and the space | interval of the pattern transcribe | transferred on the board | substrate. It is a top view which shows the mask for exposure by 3rd Embodiment of this invention. It is a top view which shows the result of having calculated | required by the simulation the pattern transcribe | transferred on the board | substrate using the exposure mask by 3rd Embodiment of this invention. It is a graph which shows the relationship between the length of the overhang | projection part of a mask pattern, and the space | interval of the transferred pattern. It is a top view which shows the result of having calculated | required by the simulation the pattern transferred on the mask for exposure by 4th Embodiment of this invention, and a board | substrate. It is a top view which shows the result of having calculated | required the pattern transferred on the conventional exposure mask and a board | substrate by simulation. It is a figure explaining shortening of the pattern transferred by the optical proximity effect. It is a figure explaining the pattern correction method of the conventional exposure mask, and its subject.

Explanation of symbols

10 ... Quartz substrate 12, 14, 16, 18, 32, 34, 36, 38 ... Mask patterns 12a, 16a, 18a of exposure masks ... Main patterns 12b, 12c, 12d, 12e, 12f, 16b, 18b ... Auxiliary patterns 20 ... Substrate 22, 24, 26, 28, 42, 44, 46 ... Pattern transferred onto the substrate

Claims (5)

  An exposure mask comprising: a mask pattern subjected to correction for adding an auxiliary pattern having a narrower width than the end of the main pattern to an end of the main pattern which is mask data before correction. A first mask pattern having a first end;
A second mask pattern having a second end facing the first end,
The width of the second end portion is wider than the width of the first end portion, and the length of the protruding portion of the second end portion with respect to the first end portion is equal to 1 of the first width. / 3 or less exposure mask.   A pattern correction method for an exposure mask, wherein correction is performed by adding an auxiliary pattern having a narrower width than the end portion of the main pattern to an end portion of the main pattern which is mask data before correction. A first mask pattern having a first end, and a second mask pattern having a second end opposite to the first end, wherein the width of the second end is A pattern correction method for an exposure mask wider than a width of a first end,
The first mask pattern and the second mask pattern so that the length of the protruding portion of the second end portion with respect to the first end portion is 1/3 or less of the first width. An exposure mask pattern correction method characterized by comprising: A step of performing exposure using an exposure mask having a mask pattern subjected to correction for adding an auxiliary pattern narrower than the end of the main pattern to the end of the main pattern which is mask data before correction. A method for manufacturing a semiconductor device, comprising:

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