JP2005197543A - Substrate processor - Google Patents

Substrate processor Download PDF

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Publication number
JP2005197543A
JP2005197543A JP2004003596A JP2004003596A JP2005197543A JP 2005197543 A JP2005197543 A JP 2005197543A JP 2004003596 A JP2004003596 A JP 2004003596A JP 2004003596 A JP2004003596 A JP 2004003596A JP 2005197543 A JP2005197543 A JP 2005197543A
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Japan
Prior art keywords
substrate
wafer
chamber
transfer
processing furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2004003596A
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Japanese (ja)
Inventor
Tetsuaki Inada
哲明 稲田
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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Priority to JP2004003596A priority Critical patent/JP2005197543A/en
Publication of JP2005197543A publication Critical patent/JP2005197543A/en
Pending legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processor whose through-put is high by preventing position deviation in the carriage process of a substrate. <P>SOLUTION: This substrate processor is configured of furnaces 202, 137 and 139 for treating a substrate 200, a first conveyance chamber 103 linked to them, preliminary chambers 122 and 123 linked to the first conveyance chamber 103, substrate mount base 140 and 141 installed in the preliminary chambers 122 and 123 for storing a plurality of substrates 200 and a substrate conveying means 124 for conveying the substrate 200 between a carrier 100 and the substrate mount bases 140 and 141. The substrate conveying means 124 is configured to convey the plurality of substrates 200 in a batch. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、半導体製造技術、特に、被処理基板を処理室に収容してヒータによって加熱
した状態で処理を施す熱処理技術に関し、例えば、半導体集積回路装置が作り込まれる半
導体ウエハに酸化処理や拡散処理、イオン打ち込み後のキャリア活性化や平坦化のための
リフローやアニール及び熱CVD反応による成膜処理などに使用される基板処理装置に利
用して有効なものに係わる。
The present invention relates to a semiconductor manufacturing technique, and more particularly, to a heat treatment technique in which a substrate to be processed is accommodated in a processing chamber and processed while being heated by a heater. For example, oxidation processing and diffusion are performed on a semiconductor wafer on which a semiconductor integrated circuit device is fabricated. The present invention relates to a substrate processing apparatus which is effective for use in a substrate processing apparatus used for processing, reflow for carrier activation after ion implantation, planarization, annealing, and thermal CVD reaction.

図3に、従来の基板処理装置の概略横断面図を示す。   FIG. 3 is a schematic cross-sectional view of a conventional substrate processing apparatus.

図3に示す従来の基板処理装置は、略六角形の断面を有する第一の搬送室103の四枚
の側壁に、第一の処理炉202、第二の処理炉137、第三の処理炉139、第四の処理
炉203が設けられ、それぞれの処理炉は、一度の処理で一枚のウエハを処理できるよう
になっている。
The conventional substrate processing apparatus shown in FIG. 3 includes a first processing furnace 202, a second processing furnace 137, and a third processing furnace on four side walls of the first transfer chamber 103 having a substantially hexagonal cross section. 139 and a fourth processing furnace 203 are provided, and each processing furnace can process one wafer in one process.

第一の搬送室103の残り二枚の側壁には、予備室122、123が連設され、それぞ
れの予備室には、複数のウエハを保持する基板置き台140、141が設けられている。
第二のウエハ移載機124が設けられる第二の搬送室121が、前記予備室122、12
3に連設されている。前記第二の搬送室121には、ウエハ200を保持するポッド10
0を外部から受け取るIOステージ105が接続されている。
Preliminary chambers 122 and 123 are connected to the remaining two side walls of the first transfer chamber 103, and substrate stands 140 and 141 for holding a plurality of wafers are provided in the respective spare chambers.
The second transfer chamber 121 in which the second wafer transfer device 124 is provided is the preliminary chambers 122 and 12.
3 is connected. In the second transfer chamber 121, the pod 10 that holds the wafer 200.
An IO stage 105 that receives 0 from the outside is connected.

第二の搬送室121には、1枚のウエハ200を載置し、載置されたウエハの位置ずれ
・角度ずれを補正するオリフラ合わせ装置106が設けられている。
The second transfer chamber 121 is provided with an orientation flat aligning device 106 on which a single wafer 200 is placed and the positional deviation and angular deviation of the placed wafer are corrected.

ポッド100に保持されたウエハ200は、第二のウエハ移載機124によって取り出
され、オリフラ合わせ装置106で補正されたのち、基板置き台140に載置される。そ
して、基板置き台140に載置されたウエハ200は、第一のウエハ移載機112によっ
て処理炉に搬入され、基板に所望の処理が施されるようになっている。
The wafer 200 held by the pod 100 is taken out by the second wafer transfer device 124, corrected by the orientation flat alignment device 106, and then placed on the substrate table 140. Then, the wafer 200 placed on the substrate placing table 140 is loaded into a processing furnace by the first wafer transfer device 112 so that a desired process is performed on the substrate.

上述の様な基板処理装置では、ウエハ200を1枚毎しか補正できないオリフラ合わせ
装置106が第2の搬送室121内に設けられているため、ポッド100に保持されたウ
エハ200を基板置き台140に搬送する動作は1枚毎に行う必要があり、更に、処理炉
にてウエハ200を一度に処理できるウエハの枚数も一枚なので、基板置き台140に載
置されたウエハ200を処理炉に搬送する作業も1枚毎となり、基板処理装置のスループ
ットが非常に悪いという問題があった。
In the substrate processing apparatus as described above, since the orientation flat aligning device 106 that can correct only one wafer 200 is provided in the second transfer chamber 121, the wafer 200 held in the pod 100 is transferred to the substrate mounting table 140. Since the number of wafers that can be processed at one time in the processing furnace is one, the wafer 200 placed on the substrate table 140 is used as the processing furnace. There is a problem that the throughput of the substrate processing apparatus is very poor because the work to be carried is one by one.

また、オリフラ合わせ装置106は、第2の搬送室121内に設けられているので、ウ
エハ200の位置ずれ・角度ずれをオリフラ合わせ装置106で補正したとしても、その
後の長い搬送動作(第二のウエハ移載機124による基板置き台140への搬送動作や、
第一のウエハ移載機112による基板置き台140から処理炉への搬送動作)の過程で、
ウエハ200に位置ずれ・角度ずれが生じる虞がある。
Further, since the orientation flat aligning device 106 is provided in the second transport chamber 121, even if the orientation flat aligning device 106 corrects the positional deviation / angular misalignment of the wafer 200, the subsequent long transport operation (second The transfer operation to the substrate table 140 by the wafer transfer device 124,
In the process of the transfer operation from the substrate stage 140 to the processing furnace by the first wafer transfer device 112)
There is a possibility that the wafer 200 may be displaced in position and angle.

従って、本発明は、複数枚のウエハを一括して搬送できるウエハ移載機を有する基板処
理装置を提供することで、スループットの高い基板処理装置を提供することを目的とする
Accordingly, an object of the present invention is to provide a substrate processing apparatus having a high throughput by providing a substrate processing apparatus having a wafer transfer machine capable of carrying a plurality of wafers at once.

上記課題を解決するために、本発明は特許請求の範囲に記載のような構成とするもので
ある。すなわち、本発明は請求項1に記載のように、基板を収容し処理する処理炉と、前
記処理炉に連設される第1の搬送室と、前記第1の搬送室に連設される予備室と、前記予
備室内に設けられ、複数の基板を保持する基板置き台と、基板をキャリアと前記置き台と
の間で搬送する基板搬送手段とを有する基板処理装置であって前記基板搬送手段は複数の
基板を一括して搬送できるように構成されていることを特徴とする基板処理装置とするも
のである。
In order to solve the above problems, the present invention is configured as described in the claims. That is, according to the present invention, as described in claim 1, the processing furnace for accommodating and processing the substrate, the first transfer chamber connected to the processing furnace, and the first transfer chamber are connected to the first transfer chamber. A substrate processing apparatus comprising: a preliminary chamber; a substrate placing table provided in the spare chamber for holding a plurality of substrates; and a substrate transporting means for transporting a substrate between a carrier and the placing table. The means is a substrate processing apparatus characterized in that a plurality of substrates can be conveyed collectively.

本発明によれば、基板を収容し処理する処理炉と、前記処理炉に連設される第1の搬送
室と、前記第1の搬送室に連設される予備室と、前記予備室内に設けられ、複数の基板を
保持する基板置き台と、基板をキャリアと前記置き台との間で搬送する基板搬送手段とを
有する基板処理装置であって前記基板搬送手段は複数の基板を一括して搬送できるように
構成されていることを特徴とする基板処理装置とする。これにより、基板搬送手段はキャ
リア内の基板を複数枚一括で基板置き台に搬送するので、従来の1枚毎の搬送に比べてス
ループットが向上する。また、オリフラ合わせ装置は、基板置き台と処理炉との間で基板
を搬送する搬送手段が搬送可能な位置に設けられ、基板を処理炉に搬入する直前に基板の
位置ずれ・角度ずれを補正するので、処理炉に搬入された基板の位置ずれや角度ずれに対
する信頼性が向上する。
According to the present invention, a processing furnace for accommodating and processing a substrate, a first transfer chamber connected to the processing furnace, a spare chamber connected to the first transfer chamber, and the spare chamber A substrate processing apparatus, comprising: a substrate table that holds a plurality of substrates; and a substrate transfer unit that transfers a substrate between a carrier and the table. The substrate transfer unit collects a plurality of substrates at once. The substrate processing apparatus is characterized in that the substrate processing apparatus is configured to be capable of being conveyed. As a result, the substrate transport means transports a plurality of substrates in the carrier to the substrate placing table in a lump, so that the throughput is improved as compared with the conventional one-by-one transport. In addition, the orientation flat aligner is provided at a position where the transport means for transporting the substrate between the substrate mounting table and the processing furnace can be transported, and corrects the positional and angular misalignment of the substrate immediately before the substrate is loaded into the processing furnace. Therefore, the reliability with respect to the positional deviation and the angular deviation of the substrate carried into the processing furnace is improved.

以下、本発明の一実施の形態を図面に即して説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

図1および図2に於いて、本発明が適用される基板処理装置の一例である半導体製造装
置の概要を説明する。
1 and 2, an outline of a semiconductor manufacturing apparatus as an example of a substrate processing apparatus to which the present invention is applied will be described.

なお、本発明が適用される基板処理装置においてはウエハなどの基板を搬送するキャリ
ヤとしては、FOUP(front opening unified pod 。以下、ポッドという。)が使用さ
れている。また、以下の説明において、前後左右は図1を基準とする。すなわち、図1が
示されている紙面に対して、前は紙面の下、後ろは紙面の上、左右は紙面の左右とする。
In the substrate processing apparatus to which the present invention is applied, a FOUP (front opening unified pod, hereinafter referred to as a pod) is used as a carrier for transporting a substrate such as a wafer. In the following description, front, rear, left and right are based on FIG. That is, with respect to the paper surface shown in FIG. 1, the front is below the paper surface, the back is above the paper surface, and the left and right are the left and right of the paper surface.

図1および図2に示されているように、基板処理装置は真空状態などの大気圧未満の圧
力(負圧)に耐えるロードロックチャンバ構造に構成された第一の搬送室103を備えて
おり、第一の搬送室103の筐体101は平面視が六角形で上下両端が閉塞した箱形状に
形成されている。第一の搬送室103には負圧下でウエハ200を移載する第一のウエハ
移載機112が設置されている。前記第一のウエハ移載機112は、エレベータ115に
よって、第一の搬送室103の気密性を維持しつつ昇降できるように構成されている。
As shown in FIGS. 1 and 2, the substrate processing apparatus includes a first transfer chamber 103 configured in a load lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. The casing 101 of the first transfer chamber 103 is formed in a box shape having a hexagonal plan view and closed at both upper and lower ends. In the first transfer chamber 103, a first wafer transfer machine 112 for transferring the wafer 200 under a negative pressure is installed. The first wafer transfer device 112 is configured to be moved up and down by an elevator 115 while maintaining the airtightness of the first transfer chamber 103.

筐体101の六枚の側壁のうち前側に位置する二枚の側壁には、搬入用の予備室122
と搬出用の予備室123とがそれぞれゲートバルブ244,127を介して連結されてお
り、それぞれ負圧に耐え得るロードロックチャンバ構造に構成されている。さらに、予備
室122には搬入室用の基板置き台140が設置され、予備室123には搬出室用の基板
置き台141が設置されている。基板置き台140、141は、複数枚のウエハ200、
例えばFOUPに保持されるウエハと同数のウエハを保持できるようになっている。
Of the six side walls of the casing 101, two side walls positioned on the front side are provided with a spare room 122 for carrying in.
Are connected to each other via gate valves 244 and 127, respectively, and each has a load lock chamber structure capable of withstanding negative pressure. Further, a substrate placing table 140 for loading and unloading chambers is installed in the spare chamber 122, and a substrate placing table 141 for unloading chambers is installed in the spare chamber 123. The substrate platforms 140 and 141 include a plurality of wafers 200,
For example, the same number of wafers can be held as the wafers held in the FOUP.

予備室122および予備室123の前側には、略大気圧下で用いられる第二の搬送室1
21がゲートバルブ128、129を介して連結されている。第二の搬送室121にはウ
エハ200を移載する第二のウエハ移載機124が設置されている。第二のウエハ移載機
124は第二の搬送室121に設置されたエレベータ126によって昇降されるように構
成されているとともに、リニアアクチュエータ132によって左右方向に往復移動される
ように構成されている。
On the front side of the spare chamber 122 and the spare chamber 123, a second transfer chamber 1 used under substantially atmospheric pressure.
21 are connected through gate valves 128 and 129. A second wafer transfer machine 124 for transferring the wafer 200 is installed in the second transfer chamber 121. The second wafer transfer device 124 is configured to be moved up and down by an elevator 126 installed in the second transfer chamber 121 and is configured to be reciprocated in the left-right direction by a linear actuator 132. .

図1に示されているように、筐体101の六枚の側壁のうち側面側に位置する側壁には
、整列室138が連結され、前記整列室138にはオリフラ合わせ装置106が設置され
ている。また、図2に示されているように、第二の搬送室121の上部にはクリーンエア
を供給するクリーンユニット118が設置されている。
As shown in FIG. 1, an alignment chamber 138 is connected to a side wall located on the side of the six side walls of the housing 101, and an orientation flat aligning device 106 is installed in the alignment chamber 138. Yes. Further, as shown in FIG. 2, a clean unit 118 for supplying clean air is installed in the upper part of the second transfer chamber 121.

図1および図2に示されているように、第二の搬送室121の筐体125には、ウエハ
200を第二の搬送室121に対して搬入搬出するためのウエハ搬入搬出口134と、前
記ウエハ搬入搬出口を閉塞する蓋142と、ポッドオープナ108がそれぞれ設置されて
いる。ポッドオープナ108は、IOステージ105に載置されたポッド100のキャッ
プ及びウエハ搬入搬出口134を閉塞する蓋142を開閉するキャップ開閉機構136と
を備えており、IOステージ105に載置されたポッド100のキャップ及びウエハ搬入
搬出口134を閉塞する蓋142をキャップ開閉機構136によって開閉することにより
、ポッド100のウエハ出し入れを可能にする。また、ポッド100は図示しない工程内
搬送装置(RGV)によって、前記IOステージ105に、供給および排出されるように
なっている。
As shown in FIGS. 1 and 2, a wafer loading / unloading port 134 for loading / unloading the wafer 200 into / from the second transfer chamber 121 is provided in the housing 125 of the second transfer chamber 121, A lid 142 for closing the wafer carry-in / out opening and a pod opener 108 are installed. The pod opener 108 includes a cap of the pod 100 placed on the IO stage 105 and a cap opening / closing mechanism 136 that opens and closes a lid 142 that closes the wafer loading / unloading port 134, and the pod placed on the IO stage 105. The cap 142 opens and closes the lid 142 that closes the cap 100 and the wafer loading / unloading port 134 by the cap opening / closing mechanism 136, thereby enabling the wafer to be taken in and out of the pod 100. The pod 100 is supplied to and discharged from the IO stage 105 by an in-process transfer device (RGV) (not shown).

図1に示されているように、筐体101の六枚の側壁のうち背面側及び側面側に位置す
る三枚の側壁には、ウエハに所望の処理を行う第一の処理炉202と、第二の処理炉13
7と、第三の処理炉139とがそれぞれ隣接して連結されている。第一の処理炉202、
第二の処理炉137、第三の処理炉139はいずれもコールドウオール式の処理炉によっ
てそれぞれ構成されている。
As shown in FIG. 1, a first processing furnace 202 for performing a desired process on a wafer is provided on three side walls located on the back side and the side of the six side walls of the housing 101, and Second processing furnace 13
7 and a third processing furnace 139 are connected adjacent to each other. First processing furnace 202,
Both the second processing furnace 137 and the third processing furnace 139 are each constituted by a cold wall type processing furnace.

以下、前記構成をもつ基板処理装置を使用した処理工程を説明する。   Hereinafter, a processing process using the substrate processing apparatus having the above-described configuration will be described.

未処理のウエハ200は、25枚のウエハ200がポッド100に収納された状態で、
処理工程を実施する基板処理装置へ工程内搬送装置によって搬送されて来る。図1および
図2に示されているように、搬送されて来たポッド100はIOステージ105の上に工
程内搬送装置から受け渡されて載置される。ポッド100のキャップ及びウエハ搬入搬出
口134を開閉する蓋142がキャップ開閉機構136によって取り外され、ポッド10
0のウエハ出し入れ口が開放される。
The unprocessed wafer 200 is a state in which 25 wafers 200 are stored in the pod 100.
It is transported by the in-process transport apparatus to the substrate processing apparatus that performs the processing process. As shown in FIGS. 1 and 2, the pod 100 that has been transported is delivered and placed on the IO stage 105 from the in-process transport device. The cap 142 and the lid 142 for opening and closing the wafer loading / unloading port 134 are removed by the cap opening / closing mechanism 136, and the pod 10 is opened.
The zero wafer loading / unloading port is opened.

ポッド100がポッドオープナ108により開放されると、第二の搬送室121に設置
された第二のウエハ移載機124はポッド100から複数枚のウエハ200をピックアッ
プし、予備室122に搬入し、ウエハ200を複数枚一括で基板置き台140に移載する
。この移載作業中には、第一の搬送室103側のゲートバルブ244は閉じられており、
第一の搬送室103の負圧は維持されている。例えば、第二のウエハ移載機124は、ポ
ッド100に保持されたウエハ200と同数のウエハ、又は空間的制約が有る場合は、ポ
ッド100に収納されるウエハの公約数になる枚数(25枚のウエハを収納可能なポッド
の場合、5枚)のウエハを一括してポッド100から予備室122内の基板置き台140
に搬送できる。ウエハ200の基板置き台140への移載が完了すると、ゲートバルブ1
28が閉じられ、予備室122が排気装置(図示せず)によって負圧に排気される。
When the pod 100 is opened by the pod opener 108, the second wafer transfer machine 124 installed in the second transfer chamber 121 picks up a plurality of wafers 200 from the pod 100 and carries them into the spare chamber 122. A plurality of wafers 200 are collectively transferred to the substrate table 140. During the transfer operation, the gate valve 244 on the first transfer chamber 103 side is closed,
The negative pressure in the first transfer chamber 103 is maintained. For example, the second wafer transfer device 124 may have the same number of wafers 200 as the number of wafers 200 held by the pod 100, or the number of wafers that are the common divisor of the wafers stored in the pod 100 when there are spatial restrictions (25 sheets). In the case of a pod capable of storing a plurality of wafers, five wafers) are collectively collected from the pod 100 to the substrate table 140 in the spare chamber 122.
Can be transported. When the transfer of the wafer 200 to the substrate table 140 is completed, the gate valve 1
28 is closed, and the preliminary chamber 122 is exhausted to a negative pressure by an exhaust device (not shown).

予備室122が予め設定された圧力値に減圧されると、ゲートバルブ244、130が
開かれ、予備室122、第一の搬送室103、第一の処理炉202が連通される。続いて
、第一の搬送室103の第一のウエハ移載機112は基板置き台140からウエハ200
を1枚ずつピックアップして整列室138内のオリフラ合わせ装置106に搬送し、ウエ
ハの位置や角度を補正した後、第一の処理炉202に搬入する。そして、第一の処理炉2
02内に処理ガスが供給され、所望の処理がウエハ200に行われる。
When the preliminary chamber 122 is depressurized to a preset pressure value, the gate valves 244 and 130 are opened, and the preliminary chamber 122, the first transfer chamber 103, and the first processing furnace 202 are communicated. Subsequently, the first wafer transfer machine 112 in the first transfer chamber 103 transfers the wafer 200 from the substrate table 140.
Are picked up one by one and conveyed to the orientation flat aligner 106 in the alignment chamber 138, and after correcting the position and angle of the wafer, it is carried into the first processing furnace 202. And the first processing furnace 2
A processing gas is supplied into 02 and a desired process is performed on the wafer 200.

第一の処理炉202で前記処理が完了すると、処理済みのウエハ200は第一の搬送室
103の第一のウエハ移載機112によって第一の搬送室103に搬出される。
When the processing is completed in the first processing furnace 202, the processed wafer 200 is transferred to the first transfer chamber 103 by the first wafer transfer device 112 in the first transfer chamber 103.

尚、ここで、第一のウエハ移載機112は第一の処理炉202から搬出したウエハ20
0を第二の処理炉137や第三の処理炉139等の他の処理炉に搬入し、引き続きウエハ
200に別の処理を行うようにしても良い。そして、この他の処理炉での処理が完了する
と、処理済みのウエハ200は第一の搬送室103の第一のウエハ移載機112によって
第一の搬送室103に搬出される。
Note that, here, the first wafer transfer machine 112 is configured so that the wafer 20 unloaded from the first processing furnace 202 is transferred.
Alternatively, 0 may be carried into another processing furnace such as the second processing furnace 137 or the third processing furnace 139, and another process may be subsequently performed on the wafer 200. When the processing in the other processing furnace is completed, the processed wafer 200 is carried out to the first transfer chamber 103 by the first wafer transfer device 112 in the first transfer chamber 103.

処理済みのウエハ200が第一の搬送室103に搬出されたのち、ゲートバルブ127
が開かれる。そして、第1のウエハ移載機112は処理炉(第一の処理炉202、又は、
第二の処理炉137、又は、第三の処理炉139)から搬出したウエハ200を予備室1
23へ搬送し、基板置き台141に移載した後、予備室123はゲートバルブ127によ
って閉じられる。
After the processed wafer 200 is carried out to the first transfer chamber 103, the gate valve 127 is used.
Is opened. Then, the first wafer transfer machine 112 is a processing furnace (first processing furnace 202 or
The wafer 200 unloaded from the second processing furnace 137 or the third processing furnace 139) is stored in the spare chamber 1.
After the transfer to the substrate mounting table 141, the preliminary chamber 123 is closed by the gate valve 127.

予備室123がゲートバルブ127によって閉じられると、前記排出用予備室123内
が不活性ガスにより略大気圧に戻される。前記予備室123内が略大気圧に戻されると、
ゲートバルブ129が開かれ、第二の搬送室121の予備室123に対応したウエハ搬入
搬出口134を閉塞する蓋142と、IOステージ105に載置された空のポッド100
のキャップがポッドオープナ108によって開かれる。続いて、第二の搬送室121の第
二のウエハ移載機124は基板置き台141から複数枚のウエハ200を一括してピック
アップして第二の搬送室121に搬出し、第二の搬送室121のウエハ搬入搬出口134
を通してポッド100に複数枚一括で収納して行く。処理済みの25枚のウエハ200の
ポッド100への収納が完了すると、ポッド100のキャップとウエハ搬入搬出口134
を閉塞する蓋142がポッドオープナ108によって閉じられる。閉じられたポッド10
0はIOステージ105の上から次の工程へ工程内搬送装置によって搬送されて行く。
When the preliminary chamber 123 is closed by the gate valve 127, the inside of the discharge preliminary chamber 123 is returned to the atmospheric pressure by the inert gas. When the inside of the preliminary chamber 123 is returned to substantially atmospheric pressure,
The gate valve 129 is opened, a lid 142 that closes the wafer loading / unloading port 134 corresponding to the spare chamber 123 of the second transfer chamber 121, and an empty pod 100 placed on the IO stage 105.
Is opened by the pod opener 108. Subsequently, the second wafer transfer device 124 in the second transfer chamber 121 collectively picks up a plurality of wafers 200 from the substrate table 141 and unloads them to the second transfer chamber 121 for the second transfer. Wafer loading / unloading port 134 of chamber 121
Through the pod 100. When the storage of the 25 processed wafers 200 in the pod 100 is completed, the cap of the pod 100 and the wafer loading / unloading port 134 are completed.
The lid 142 is closed by the pod opener 108. Closed pod 10
0 is transferred from the top of the IO stage 105 to the next process by the in-process transfer apparatus.

以上の作動が繰り返されることにより、ウエハが順次、処理されて行く。以上の作動は
第一の処理炉202が使用される場合を例にして説明したが、第二の処理炉137および
第三の処理炉139が使用される場合についても同様の作動が実施される。
By repeating the above operation, the wafers are sequentially processed. The above operation has been described by taking the case where the first processing furnace 202 is used as an example, but the same operation is also performed when the second processing furnace 137 and the third processing furnace 139 are used. .

この様に、第二のウエハ移載機124はポッド100内のウエハ200を複数枚一括で
基板置き台140に搬送するので、従来の1枚毎の搬送に比べてスループットが向上する
。また、オリフラ合わせ装置106は、基板置き台140と処理炉との間で基板を搬送す
る第一のウエハ移載機112が搬送可能な位置に設けられ、ウエハ200を処理炉に搬入
する直前にウエハ200の位置ずれ・角度ずれを補正するので、処理炉に搬入されたウエ
ハ200の位置ずれや角度ずれに対する信頼性が向上する。
As described above, since the second wafer transfer device 124 transfers a plurality of wafers 200 in the pod 100 to the substrate placing table 140 at a time, the throughput is improved as compared with the conventional transfer of each wafer. In addition, the orientation flat aligning device 106 is provided at a position where the first wafer transfer device 112 that transports the substrate between the substrate placing table 140 and the processing furnace can be transported, and immediately before the wafer 200 is loaded into the processing furnace. Since the positional deviation and angular deviation of the wafer 200 are corrected, the reliability with respect to the positional deviation and angular deviation of the wafer 200 carried into the processing furnace is improved.

なお、上述の基板処理装置では、予備室122を搬入用、予備室123を搬出用とした
が、予備室123を搬入用、予備室122を搬出用としてもよい。また、第一の処理炉2
02と第二の処理炉137と第三の処理と139は、それぞれ同じ処理を行ってもよいし
、別の処理を行ってもよい。第一の処理炉202と第二の処理炉137と第三の処理と1
39で別の処理を行う場合、例えば第一の処理炉202でウエハ200にある処理を行っ
た後、続けて第二の処理炉137で別の処理を行わせてもよい。また、本発明の実施例で
は、オリフラ合わせ装置106を、第一の搬送室に連設された整列室138に設けたがこ
れに限定されない。即ち、オリフラ合わせ装置106は、第一の搬送室103内や搬入用
の予備室内(本発明の実施例では、基板置き台140)に設けても良く、搬入用の基板置
き台に保持されたウエハ200を処理炉に搬送するまでの間でウエハのオリフラ合わせを
行える位置に設けられればよい。
In the above-described substrate processing apparatus, the spare chamber 122 is used for carrying in and the spare chamber 123 is used for carrying out. However, the spare chamber 123 may be used for carrying in, and the spare chamber 122 may be used for carrying out. The first processing furnace 2
02, the second processing furnace 137, the third processing, and 139 may perform the same processing, or may perform different processing. 1st processing furnace 202, 2nd processing furnace 137, 3rd processing, and 1
When another process is performed in 39, for example, after the process on the wafer 200 is performed in the first process furnace 202, another process may be performed in the second process furnace 137. In the embodiment of the present invention, the orientation flat aligning device 106 is provided in the alignment chamber 138 connected to the first transfer chamber, but the present invention is not limited to this. In other words, the orientation flat aligning device 106 may be provided in the first transfer chamber 103 or a spare room for loading (in the embodiment of the present invention, the substrate table 140), and is held by the substrate table for loading. It may be provided at a position where the orientation flat alignment of the wafer can be performed until the wafer 200 is transferred to the processing furnace.

本発明の実施例における基板処理装置を示す概略横断面図。1 is a schematic cross-sectional view showing a substrate processing apparatus in an embodiment of the present invention. 本発明の実施例における基板処理装置を示す概略縦断面図。The schematic longitudinal cross-sectional view which shows the substrate processing apparatus in the Example of this invention. 従来例における基板処理装置を示す概略横断面図。The schematic cross-sectional view which shows the substrate processing apparatus in a prior art example.

符号の説明Explanation of symbols

103 第一の搬送室
106 オリフラ合わせ装置
112 第一のウエハ移載機
121 第二の搬送室
122 予備室
123 予備室
124 第二のウエハ移載機
137 第二の処理炉
138 整列室
139 第三の処理炉
140 基板置き台
141 基板置き台
200 ウエハ
202 第一の処理炉
203 第四の処理炉
103 First transfer chamber 106 Orientation flat aligner 112 First wafer transfer device 121 Second transfer chamber 122 Preliminary chamber 123 Preliminary chamber 124 Second wafer transfer device 137 Second processing furnace 138 Alignment chamber 139 Third Processing furnace 140 Substrate table 141 Substrate table 200 Wafer 202 First processing furnace 203 Fourth processing furnace

Claims (1)

基板を収容し処理する処理炉と、
前記処理炉に連設される第1の搬送室と、
前記第1の搬送室に連設される予備室と、
前記予備室内に設けられ、複数の基板を保持する基板置き台と、
基板をキャリアと前記置き台との間で搬送する基板搬送手段と
を有する基板処理装置であって
前記基板搬送手段は複数の基板を一括して搬送できるように構成されていること
を特徴とする基板処理装置。
A processing furnace for receiving and processing substrates;
A first transfer chamber connected to the processing furnace;
A preliminary chamber connected to the first transfer chamber;
A substrate table that is provided in the spare chamber and holds a plurality of substrates;
A substrate processing apparatus having a substrate transfer means for transferring a substrate between a carrier and the placing table, wherein the substrate transfer means is configured to transfer a plurality of substrates at once. Substrate processing equipment.
JP2004003596A 2004-01-09 2004-01-09 Substrate processor Pending JP2005197543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004003596A JP2005197543A (en) 2004-01-09 2004-01-09 Substrate processor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004003596A JP2005197543A (en) 2004-01-09 2004-01-09 Substrate processor

Publications (1)

Publication Number Publication Date
JP2005197543A true JP2005197543A (en) 2005-07-21

Family

ID=34818452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004003596A Pending JP2005197543A (en) 2004-01-09 2004-01-09 Substrate processor

Country Status (1)

Country Link
JP (1) JP2005197543A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347261A (en) * 2010-08-02 2012-02-08 北京中科信电子装备有限公司 Silicon chip transmission system layout structure
CN102867768A (en) * 2011-07-05 2013-01-09 北京中科信电子装备有限公司 Method for improving wafer transmission efficiency of target chamber
JP2014067939A (en) * 2012-09-27 2014-04-17 Hitachi Kokusai Electric Inc Substrate processing device, inert gas supply unit, and method for manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347261A (en) * 2010-08-02 2012-02-08 北京中科信电子装备有限公司 Silicon chip transmission system layout structure
CN102867768A (en) * 2011-07-05 2013-01-09 北京中科信电子装备有限公司 Method for improving wafer transmission efficiency of target chamber
JP2014067939A (en) * 2012-09-27 2014-04-17 Hitachi Kokusai Electric Inc Substrate processing device, inert gas supply unit, and method for manufacturing semiconductor device

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