JP2005189665A - Photomask - Google Patents

Photomask Download PDF

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Publication number
JP2005189665A
JP2005189665A JP2003433203A JP2003433203A JP2005189665A JP 2005189665 A JP2005189665 A JP 2005189665A JP 2003433203 A JP2003433203 A JP 2003433203A JP 2003433203 A JP2003433203 A JP 2003433203A JP 2005189665 A JP2005189665 A JP 2005189665A
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photomask
light shielding
pattern
film
shielding film
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JP2003433203A
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Japanese (ja)
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Tatsuo Kobayashi
小林辰雄
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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Priority to JP2003433203A priority Critical patent/JP2005189665A/en
Publication of JP2005189665A publication Critical patent/JP2005189665A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To solve such problems that many kinds of substrates used for a photomask have tendency of easily charged, in particular, although quartz glass has extremely excellent optical characteristics, it is much easily charged as electric characteristics, and that when a photomask charged as described above is laid on a photoresist film, exposed and then separated from the photomask, the mask might induce electrostatic discharge and damage a chromium pattern formed on the photomask surface. <P>SOLUTION: The photomask has a light shielding film on the surface of a transparent substrate, the light shielding film formed into a pattern to shield a photoresist film against exposure. In this mask, a conductive transparent resin film is formed over the entire surface of the transparent substrate where the light shielding film is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、フォトマスクの構造に関し、特に、遮光膜の破損がないフォトマスク関する発明である。   The present invention relates to a photomask structure, and particularly relates to a photomask in which a light shielding film is not damaged.

圧電振動子や弾性表面波素子に使用される圧電素子を製造するために用いられるフォトリソグラフィ法において、遮光膜を形成したフォトマスクの遮光パターンの像を、フォトレジストが形成されたガラスプレートや水晶ウエハ等の基板上に投影転写する露光装置が用いられている。   In a photolithography method used to manufacture a piezoelectric element used for a piezoelectric vibrator or a surface acoustic wave element, an image of a light-shielding pattern of a photomask having a light-shielding film is formed on a glass plate or a crystal on which a photoresist is formed. An exposure apparatus that projects and transfers onto a substrate such as a wafer is used.

このような露光装置に用いられるフォトマスクは、マスク基板の表面に遮光性の高い膜で電極パターン(マスクパターン)を形成して構成される。この電極パターンを形成する材料としては、薄膜加工が容易で且つ遮光性が高いという特徴から、一般的にクロムが用いられている。   A photomask used in such an exposure apparatus is configured by forming an electrode pattern (mask pattern) with a highly light-shielding film on the surface of a mask substrate. As a material for forming this electrode pattern, chromium is generally used because it is easy to process a thin film and has high light shielding properties.

更に、フォトマスクに用いられる基板の材料としては、石英ガラスが多用されている。石英ガラスは光の透過損失が小さく、又温度による光学的性能の低下が小さく、耐腐食性や弾性性能がフォトマスクとして使用することに適している等優れた特性を有しており、表面に高精度で微細なパターン形成が可能であるとともに、そのパターン形成も容易である特徴を有している。尚、フォトマスクに用いられる基板の他の材料としては、蛍石等が使用されている。   Further, quartz glass is frequently used as a material for a substrate used for a photomask. Quartz glass has excellent characteristics such as low optical transmission loss, small optical performance degradation due to temperature, and suitable for use as a photomask with corrosion resistance and elastic performance. It has a feature that a fine pattern can be formed with high precision and that the pattern can be easily formed. In addition, fluorite etc. are used as another material of the board | substrate used for a photomask.

又、通常は一枚のフォトマスクには複数個の素子を形成するパターンが形成され、一枚のフォトマスクで複数回、一度に多数の素子パターンを水晶ウエハ等の基板上に形成する方法が用いられている。   Also, a pattern for forming a plurality of elements is usually formed on a single photomask, and a method for forming a large number of element patterns on a substrate such as a quartz wafer at a time multiple times with a single photomask. It is used.

前記のようなフォトマスクについては、以下のような文献が開示されている。   Regarding the photomask as described above, the following documents are disclosed.

特開平8−6234号公報JP-A-8-6234 特開平8−278625号公報JP-A-8-278625

尚、出願人は前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を、本件出願時までに発見するに至らなかった。   In addition, the applicant has not found any prior art documents related to the present invention by the time of filing of the present application other than the prior art documents specified by the above prior art document information.

フォトリソグラフィ法では、露光の際フォトレジスト膜へフォトマスクに形成した微細パターンを正確に投射するために、フォトマスク表面と遮光膜パターンとの間を密着させることが望ましい。遮光膜が剥がれると露光の際にパターンの輪郭部分が不鮮明になってしまい、所望の形状のパターンを正確にフォトレジスト膜へ投射できなくなる。   In the photolithography method, in order to accurately project the fine pattern formed on the photomask onto the photoresist film at the time of exposure, it is desirable that the surface of the photomask and the light shielding film pattern are brought into close contact with each other. When the light shielding film is peeled off, the outline of the pattern becomes unclear during exposure, and a pattern having a desired shape cannot be accurately projected onto the photoresist film.

しかし、フォトマスクに使用される基板は帯電しやすい材質のものが多い。特に石英ガラスは光学的特性が非常に優れているが、電気的特性上非常に帯電しやすく、このように帯電した状態のフォトマスクをフォトレジスト膜上に配置し露光した後でフォトレジスト膜からフォトマスクを離す際に静電放電が生じ、フォトマスク表面に形成したクロムのパターンを破壊する場合がある。   However, many substrates used for photomasks are easily charged. Quartz glass, in particular, has very good optical characteristics, but it is very easy to be charged due to its electrical characteristics, and a photomask in such a charged state is placed on the photoresist film and exposed to light. When the photomask is released, electrostatic discharge may occur, destroying the chromium pattern formed on the photomask surface.

又、帯電したフォトマスクの表面には微細なゴミが吸着しやすくなり、露光の際の不具合の発生原因になる恐れがある。更に、パターン破壊に至らないまでも、フォトマスク表面と遮光膜との間の密着性が弱まり、遮光膜がフォトマスク表面から一部剥がれてしまい、露光時に所望のパターン形状を得られない不具合の発生が懸念されている。   In addition, fine dust tends to be adsorbed on the surface of the charged photomask, which may cause problems during exposure. Furthermore, even if pattern destruction does not occur, the adhesion between the photomask surface and the light shielding film is weakened, and the light shielding film is partially peeled off from the photomask surface, so that the desired pattern shape cannot be obtained at the time of exposure. There are concerns about the occurrence.

本発明は前述した問題点を解決するために成されたものであり、透明基板の表面にフォトレジスト膜への露光を遮光するパターン模様に形成した遮光膜を形成したフォトマスクにおいて、この遮光膜を表面に形成した透明基板上の全面に、透明な樹脂膜を形成していることを特徴とするフォトマスクである。   The present invention has been made to solve the above-described problems. In a photomask in which a light shielding film formed in a pattern pattern for shielding exposure to a photoresist film is formed on the surface of a transparent substrate, the light shielding film A photomask is characterized in that a transparent resin film is formed on the entire surface of a transparent substrate on which is formed.

又、前述した透明な樹脂膜が導電性を有する樹脂膜であり、且つこの樹脂膜が接地されていることを特徴とするフォトマスクでもある。   In addition, the transparent resin film described above is a resin film having conductivity, and the photomask is characterized in that the resin film is grounded.

本発明に係るフォトマスクにおいて、フォトマスクに帯電しやすい石英ガラス使用した場合でも、パターンが形成されたフォトマスク表面に形成した導電性樹脂膜(接地接続)により帯電した電荷は接地端に流れてしまう作用により、フォトマスクをフォトレジスト膜上に配置し露光した後でフォトレジスト膜からフォトマスクを離す際でも静電放電が生じず、フォトマスク表面に形成したクロムのパターンを破壊することはない。   In the photomask according to the present invention, even when quartz glass that is easily charged is used for the photomask, the charge charged by the conductive resin film (ground connection) formed on the photomask surface on which the pattern is formed flows to the ground end. Because of this, electrostatic discharge does not occur even when the photomask is placed on the photoresist film and exposed to light after the photomask is separated from the photoresist film, and the chromium pattern formed on the photomask surface is not destroyed. .

又、帯電した電荷を除去しているため、フォトマスクの表面にはゴミが吸着がなくなり、露光の際の不具合の発生原因になる恐れがなくなる。更に、透明樹脂膜を形成することにより、フォトマスク表面と遮光膜パターンとが、全ての箇所において密着することができるようになる。   Further, since the charged electric charge is removed, dust is not adsorbed on the surface of the photomask, and there is no possibility of causing a problem during exposure. Furthermore, by forming the transparent resin film, the photomask surface and the light shielding film pattern can be in close contact with each other.

従って、本発明のフォトマスクにより、フォトマスク基板上に形成したパターンの信頼性の向上及び露光不良品の減少による歩留まりの向上に著しい効果を奏する。   Therefore, the photomask of the present invention has a significant effect on improving the reliability of the pattern formed on the photomask substrate and improving the yield by reducing the number of defective exposure products.

以下、本発明におけるフォトマスクの一実施形態を、図面を参照しながら説明する。
図1は本発明に係わるフォトマスクの一部の実施形態を示す断面図である。尚、図1にあって、説明を明りょうにするため構造体の一部を図示せず、また寸法も一部誇張して図示している。各部分の厚さ寸法は本発明を理解し易くするために特にデフォルメした形で現している。
Hereinafter, an embodiment of a photomask according to the present invention will be described with reference to the drawings.
FIG. 1 is a sectional view showing an embodiment of a part of a photomask according to the present invention. In FIG. 1, for clarity of explanation, a part of the structure is not shown, and some dimensions are exaggerated. The thickness dimension of each part is shown in a particularly deformed form to facilitate understanding of the present invention.

即ち、図1において、板状の石英ガラス11の一方の主面側には、所望のパターンを形成した厚さ約100nmほどの金属クロム製の遮光膜12が形成されている。通常遮光膜12のパターンは後述するフォトレジスト膜に一度に複数の素子電極パターンを形成するようなパターンが形成されており、遮光膜12のパターン形成方法としては、リソグラフィ法やスパッタリング法により形成する。尚、基板材としては、石英ガラスの他に、蛍石や水晶等が用いられる。   That is, in FIG. 1, a light shielding film 12 made of metallic chrome having a thickness of about 100 nm on which a desired pattern is formed is formed on one main surface side of a plate-like quartz glass 11. Usually, the pattern of the light shielding film 12 is such that a plurality of device electrode patterns are formed at a time on a photoresist film, which will be described later. The light shielding film 12 is formed by a lithography method or a sputtering method. . As the substrate material, in addition to quartz glass, fluorite or quartz is used.

この遮光膜12が形成された石英基板11の表面全面に、導電性の透明樹脂膜13をスピンコート法により形成し、フォトマスク10を構成している。この透明樹脂膜13は石英基板11の表面の露光領域以外に形成した電極(図示せず)に電気的に接触(接続)しており、この電極は接地端と電気的に接続している。尚、透明樹脂膜13の厚みは数百nm前後で形成しているが、可能なかぎり薄く形成することが望ましい。更にその形成方法としては、他に、スパッタリング法やCVD法などにより形成しても構わない。   A conductive transparent resin film 13 is formed on the entire surface of the quartz substrate 11 on which the light-shielding film 12 is formed by a spin coating method to constitute a photomask 10. The transparent resin film 13 is in electrical contact (connection) with an electrode (not shown) formed outside the exposed region on the surface of the quartz substrate 11, and this electrode is electrically connected to the ground terminal. The transparent resin film 13 is formed with a thickness of about several hundred nm, but it is desirable to form it as thin as possible. Further, as the formation method, other methods such as sputtering or CVD may be used.

このように遮光膜12が形成された石英基板11の表面全面に、接地端に電気的に接続した導電性の透明樹脂膜13を形成することにより、フォトマスク10に帯電した電荷を透明樹脂膜13を介して接地端に放電することができ、フォトマスク10本体に不用な電荷を貯めることが無い。因って、フォトマスク上において静電放電が発生することが無く、この放電現象に起因していた遮光膜パターン破壊などの様々な不具合をなくすことができる。また、透明樹脂膜13を遮光膜12の上から形成することで、遮光膜12を石英基板11の表面に密着することができ、遮光膜パターンが石英基板表面から剥がれてしまうことも同時に防止できる。   By forming the conductive transparent resin film 13 electrically connected to the ground end over the entire surface of the quartz substrate 11 on which the light shielding film 12 is thus formed, the charge charged on the photomask 10 is transferred to the transparent resin film. It is possible to discharge to the ground end via 13 and no unnecessary charge is stored in the photomask 10 body. Therefore, electrostatic discharge does not occur on the photomask, and various problems such as destruction of the light shielding film pattern caused by this discharge phenomenon can be eliminated. Further, by forming the transparent resin film 13 on the light shielding film 12, the light shielding film 12 can be adhered to the surface of the quartz substrate 11, and the light shielding film pattern can be prevented from being peeled off from the surface of the quartz substrate at the same time. .

尚、上記実施例においては透明樹脂膜13として導電性を有するものを使用しているが、フォトマスクの基板材料としては帯電性が低く静電放電が発生しにくい材質のものをした場合では、透明樹脂膜13に導電性は必要なく、非導電性の透明樹脂膜を使用することにより、遮光膜12を石英基板11の表面に密着することができ、遮光膜パターンが石英基板表面から剥がれてしまうことを防止している。   In the above embodiment, a conductive resin is used as the transparent resin film 13. However, when the substrate material of the photomask is made of a material that has low chargeability and hardly generates electrostatic discharge, The transparent resin film 13 does not need to be conductive, and by using a non-conductive transparent resin film, the light shielding film 12 can be brought into close contact with the surface of the quartz substrate 11, and the light shielding film pattern is peeled off from the surface of the quartz substrate. Is prevented.

図1は、本発明に係わるフォトマスクの一実施形態における一部を示した断面図である。FIG. 1 is a sectional view showing a part of an embodiment of a photomask according to the present invention.

符号の説明Explanation of symbols

10,フォトマスク
11,石英基板
12,遮光膜
13,透明樹脂膜
10, photomask 11, quartz substrate 12, light shielding film 13, transparent resin film

Claims (2)

透明基板の表面にフォトレジスト膜への露光を遮光するパターン模様に形成した遮光膜を形成したフォトマスクにおいて、
該遮光膜を表面に形成した該透明基板上の全面に透明な樹脂膜を形成していることを特徴とするフォトマスク。
In a photomask in which a light shielding film formed in a pattern pattern for shielding exposure to a photoresist film on the surface of a transparent substrate is formed,
A photomask comprising a transparent resin film formed on the entire surface of the transparent substrate on which the light shielding film is formed.
該透明樹脂膜が導電性を有する樹脂膜であり、且つ該透明樹脂膜が接地されていることを特徴とする請求項1記載のフォトマスク。   2. The photomask according to claim 1, wherein the transparent resin film is a conductive resin film, and the transparent resin film is grounded.
JP2003433203A 2003-12-26 2003-12-26 Photomask Pending JP2005189665A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009122295A (en) * 2007-11-14 2009-06-04 Dainippon Printing Co Ltd Photomask
CN112650019A (en) * 2021-01-23 2021-04-13 烟台正海科技股份有限公司 Anti-static chromium plate and preparation process thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009122295A (en) * 2007-11-14 2009-06-04 Dainippon Printing Co Ltd Photomask
CN112650019A (en) * 2021-01-23 2021-04-13 烟台正海科技股份有限公司 Anti-static chromium plate and preparation process thereof

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