JP2005184707A - Transistor amplifier - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermally stable and high output type high frequency power amplifier with lower distortion characteristics, having a plurality of bipolar transistors connected in parallel. <P>SOLUTION: Capacitors 2a, 2b, and 2c are provided at each base terminal of a plurality of bipolar transistors 1a, 1b, and 1c. Moreover, an anode terminal of diode elements 3a, 3b, and 3c is arranged and connected to each base terminal of the bipolar transistors 1a, 1b, and 1c. In addition, a cathode terminal of the diode elements 3a, 3b, and 3c is connected in common, and a resistance element 4 is disposed at the common connection point. Furthermore, a capacitor 5 is disposed between the common connection point and the grounding point. A radio frequency signal is applied to the base terminal of each transistor through the capacitors 2a, 2b, and 2c, and DC voltage is applied to the base terminal of each transistor through the resistance element 4. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a transistor amplifier, and more particularly to a high-frequency power amplifier in which a plurality of bipolar transistors are connected in parallel.

  Currently, a heterojunction bipolar transistor (HBT) formed on a GaAs substrate or Si substrate is applied to a high frequency power amplifier for mobile communication. When a bipolar transistor is applied to a power amplifier, a resistance element is added to the emitter terminal or the base terminal to suppress thermal runaway as shown in FIG. Conventionally, a ballast resistance method has been performed in which a negative feedback action is given to the relationship to offset a positive feedback action due to a temperature rise. In FIG. 10, the horizontal axis represents the collector-emitter voltage, and the vertical axis represents the collector current.

  When this ballast resistance method is used, in order to eliminate loss at high frequencies, it is common to connect a capacitive element 10 in parallel with the ballast resistor 11 as shown in FIG. That is, a DC (direct current bias) voltage is applied to the base of the HBT 9 via the resistance element 11 and an RF signal is applied via the capacitive element 10. Since the current gain of the HBT 9 decreases as the temperature rises, the base ballast resistance method is preferred because the negative feedback action at a high temperature is increased. Furthermore, since the area occupied by the capacitive element is larger than that of the resistive element on the semiconductor substrate, the base ballast resistance method is preferred from the viewpoint of reducing the capacitive element area.

  On the other hand, when the output of the amplifier is increased, a multi-cell transistor configuration in which a plurality of transistor cells are connected in parallel is used. However, when the multi-cell transistor configuration is used, the conventional ballast resistor method has a problem that a current collapse as shown in FIG. 12 occurs due to a thermal non-uniform operation between transistor cells, and a desired high output characteristic cannot be obtained. Arise.

Patent Document 1 discloses a high-frequency power amplifier for an HBT having a multi-cell transistor configuration. In this technique, as shown in FIG. 13, resistance elements 14a to 14c and capacitance elements 13a to 13c are respectively provided at the base terminals of the bipolar transistors 12a to 12c, and the transistors 12a to 14c are respectively connected through the resistance elements 14a to 14c. By applying a DC voltage to ~ 12c and applying an RF signal through each capacitive element 13a-13c, thermal runaway and inter-cell thermal non-uniform operation are suppressed by the potential drop of the resistance element, and RF signal loss is suppressed. A high frequency power amplifier is described.
US Pat. No. 5,608,353

In the single transistor amplifier shown in FIG. 11, the resistance value added to the transistor 9 in order to suppress thermal runaway is given by the following equation (1).
Rbb ≧ α ・ β ・ Vcc ・ Rth / n ・ gm (1)
Where Rbb is the base ballast resistance value, α is the current temperature coefficient (A / ° C), β is the current gain, Vcc is the collector voltage (V), Rth is the thermal resistance (° C / W), n is the number of cells, and gm Is the mutual conductance (S).

On the other hand, in the parallel-connected transistor amplifier shown in FIG. 13, the resistance value for suppressing the thermal non-uniformity between the cells is given by the following equation (2) when the temperature difference generated between the cells is approximated by the thermal resistance. .
Rbb ≧ α ・ β ・ Vcc ・ (Rth1 −Rth2) / n ・ gm (2)
Here, Rth1 is the thermal resistance of the maximum temperature cell, and Rth2 is the thermal resistance of the minimum temperature cell.

  As can be seen from these equations (1) and (2), the resistance value for suppressing the thermal runaway is larger than the resistance for suppressing the thermal non-uniform operation between the cells. Therefore, in Patent Document 1, a new problem arises because an excessive resistance value is added for the purpose of suppressing the non-uniform heat operation between cells. The first problem is a decrease in output power. The ballast resistor has an effect of suppressing an increase in current, and reduces the maximum current value that can be passed through each transistor cell. This results in the problem of reducing the maximum output power of the power amplifier.

  The second problem is deterioration of distortion characteristics. In a digital modulation signal typified by a CDMA modulation signal, the amplitude of the high-frequency current changes depending on time. Therefore, when the difference frequency current (current of spurious component due to transistor nonlinearity) generated when a digital modulation signal is input to the amplifier passes through the base ballast resistor, the DC applied to the base terminal of the transistor Modulate the voltage. As a result, the bias point fluctuates and the distortion becomes worse.

  An object of the present invention is to provide a transistor amplifier having high output characteristics while maintaining thermal stability.

  Another object of the present invention is to provide a transistor amplifier having low distortion characteristics while maintaining thermal stability.

  According to a first aspect of the present invention, a transistor amplifier is provided for each of a plurality of bipolar transistors and the bipolar transistors, one end of which is connected to a base terminal of the corresponding bipolar transistor and the other end is connected to an input terminal. A plurality of capacitive elements, and a plurality of nonlinear elements provided for each of the bipolar transistors, one end of which is connected to the base terminal of the corresponding bipolar transistor and the other end is connected to a DC terminal. And

  In other words, the bipolar transistor base current increases as the RF signal level input to the amplifier is increased, but the potential drop generated between the nonlinear element terminals does not increase linearly with respect to the base current. Therefore, an excessive decrease in base potential of the transistor can be suppressed, and desired high output characteristics can be obtained. Further, since a non-linear element is added to each bipolar transistor, current collapse can be suppressed.

  According to a second aspect of the present invention, a transistor amplifier is provided for each of a plurality of bipolar transistors and the bipolar transistor, one end of which is connected to a base terminal of the corresponding bipolar transistor and the other end is connected to an input terminal. A plurality of non-linear elements provided for each of the bipolar transistors, one end of which is connected to the base terminal of the corresponding bipolar transistor, and one end of which is a common connection between the other ends of the non-linear elements And a resistance element having the other end connected to a DC terminal.

  That is, by providing a non-linear element, it is possible to obtain the same thermal uniformity and high output characteristics as those of the amplifier of claim 1, and by adding resistance, it is possible to further suppress thermal runaway. Become.

  According to a third aspect of the present invention, the transistor amplifier further includes a capacitive element having one end connected to the common connection point and the other end connected to a reference potential point. That is, the thermal uniformity and thermal runaway suppression and high output characteristics similar to those of the transistor amplifier according to claim 2 can be obtained, and further, since the capacitance is added, the spurious current component does not pass through the resistor. It is possible to obtain a low distortion characteristic.

  The transistor amplifier according to claim 4 of the present invention is provided for each of a plurality of bipolar transistors and each of the bipolar transistors, one end of which is connected to the base terminal of the corresponding bipolar transistor and the other end is connected to the input terminal. A plurality of capacitive elements and a plurality of resistance elements provided for each of the bipolar transistors, one end connected to the base terminal of the corresponding bipolar transistor, and one end connected to a common connection point of each of the resistance elements And a resistance element having the other end connected to the DC terminal.

  That is, it is possible to suppress thermal non-uniformity by the resistance added to each transistor, and to suppress thermal runaway by the resistance added between the power flow voltage terminal and the resistance element. Furthermore, since thermal runaway and thermal non-uniformity can be suppressed individually, an excessive resistance is not added, and a desired high output characteristic can be obtained.

  The transistor amplifier according to claim 5 of the present invention is the transistor amplifier according to claim 4, further comprising a capacitive element having one end connected to the common connection point and the other end connected to a reference potential point. It is characterized by. In other words, thermal uniformity, thermal runaway suppression, and high output characteristics can be obtained. Further, by adding capacity, the spurious current component passes only through the resistance for obtaining thermal uniformity. Distorted characteristics can be obtained.

  The transistor amplifier according to claim 6 of the present invention is the transistor amplifier described above, wherein one end is connected to the base terminal of the bipolar transistor and the other end is connected to the reference potential point. Provided with a non-linear element. That is, thermal uniformity, thermal runaway suppression, high output characteristics, and low distortion characteristics can be obtained, and by adding a non-linear element, RF nonuniform operation between transistor cells is achieved. It is possible to suppress distortion caused by the above.

  The transistor amplifier according to claim 16 of the present invention is provided for each of a plurality of bipolar transistors, one end of which is connected to a base terminal of the corresponding bipolar transistor and the other end is connected to an input terminal. A capacitor element and a plurality of three-terminal nonlinear elements provided for each of the plurality of bipolar transistors, one end of each of the plurality of nonlinear elements being connected to a base terminal of the corresponding bipolar transistor; The terminal is connected to a plurality of DC terminals. With this configuration, the same effect as that of the transistor amplifier according to the first aspect is obtained.

  Advantageous Effects of Invention According to the present invention, in a transistor amplifier configured by connecting a plurality of bipolar transistors formed on a GaAs substrate or Si substrate in parallel, it has thermal stability and can provide high output and low distortion characteristics. There is.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a configuration diagram of a high-frequency power amplifier according to a first embodiment of the present invention. That is, capacitive elements 2a, 2b, and 2c are arranged at base terminals of three heterojunction bipolar transistors (HBT) 1a, 1b, and 1c, respectively. Furthermore, diode elements 3a, 3b, and 3c are arranged with their anode terminals connected to the base terminals of the heterojunction bipolar transistors 1a, 1b, and 1c, respectively. An RF signal is applied to the base of each transistor through the capacitive elements 2a, 2b, and 2c, and a DC voltage is applied to the base of each transistor through the cathode terminals of the diode elements 3a, 3b, and 3c.

  By configuring the high-frequency power amplifier in this way, it is possible to suppress the non-uniform heat operation between cells and to obtain high output power characteristics. This effect will be further described using equations. In general, a bipolar transistor to which no ballast resistor is added causes thermal runaway. Therefore, in order to suppress thermal runaway, a resistance element is added to the base terminal of the bipolar transistor, and a negative feedback action is given to the current rise accompanying the temperature rise and the voltage relationship between the emitter and base, and a positive feedback action due to the temperature rise is achieved. The offsetting is as described above.

However, if the RF input signal level is increased in order to obtain high output power, the base current increases rapidly. Therefore, a potential drop occurs linearly between the base emitters of the respective transistors as shown in the following formula (3), which causes a problem that a desired high output power cannot be obtained.
ΔVbej = -ΔIb · Rbb (3)
Here, ΔVbej is a voltage component (V) in which the base-emitter voltage in each transistor fluctuates, ΔIb is a current component (A) in which the base current in each transistor is increased, and Rbb is added to each transistor in the conventional example. Base ballast resistance (Ω).

Therefore, as shown in FIG. 1, instead of the base ballast resistor element, a diode element is added to the base terminal of each bipolar transistor, so that the following equation (4) is provided between the base emitters of each transistor. It is possible to generate a non-linear potential drop.
ΔVbej = (− 1 / Vt) lnΔIb (4)
Here, Vt is room temperature thermal energy (eV).

  Therefore, as shown in FIG. 2, since a potential drop in a region where the base current is high can be suppressed as compared with the conventional resistance element, a desired high output power can be obtained even if the RF input signal level is increased. be able to. Further, since the diode element also has a negative feedback action, it can be added to each bipolar transistor to obtain thermal uniformity between cells, and the current collapse problem shown in FIG. 11 can be solved. High output characteristics can be obtained while maintaining thermal stability.

  As a preferable diode element in this example, a pn diode formed of a base layer and a collector layer of a bipolar transistor, a pin diode formed of a base layer, a collector layer and a subcollector layer of a bipolar transistor, and a base layer and an emitter layer of a bipolar transistor are used. Examples thereof include a pn diode formed, and a Schottky diode formed of a collector layer and metal of a bipolar transistor.

  FIG. 3 is a configuration diagram of a high-frequency power amplifier according to the second embodiment of the present invention, and the same parts as those in FIG. 1 are denoted by the same reference numerals. That is, capacitive elements 2a, 2b, and 2c are arranged at base terminals of three heterojunction bipolar transistors (HBT) 1a, 1b, and 1c, respectively. Further, diode elements 3a, 3b, and 3b are arranged with their anode terminals connected to the base terminals of the heterojunction bipolar transistors 1a, 1b, and 1c, respectively. Furthermore, the cathode terminals of the diode elements 3a, 3b, and 3c are commonly connected, and the resistance element 4 is disposed at the connection point. An RF signal is applied to the base of each transistor through the capacitive elements 2a, 2b, and 2c, and a DC voltage is applied to the base of each transistor through the resistance element 4 and the diode elements 3a to 3c.

By configuring the high-frequency power amplifier in this manner, as in the case of the first embodiment of FIG. 1, not only the heat non-uniform operation between cells is suppressed and high output power characteristics are obtained, but each As shown in the following formula (5), the potential drop generated between the base and emitter of the transistor has an effect that thermal runaway can be suppressed as compared with the first embodiment.
ΔVbej = (− 1 / Vt) lnΔIb−n · ΔIb · R4 (5)
Here, R4 is the resistance value (Ω) of the resistance element 4, and n is the number of cells.

  A preferable resistance element in this example is composed of any of WSi, WSiN, TaN, and NiCr. In addition, a preferable resistance element in this example is an epitaxial resistance layer constituted by any of an emitter layer, a base layer, a collector layer, and a subcollector layer of a bipolar transistor, and a preferable resistance element is a polycrystalline silicon layer.

  Here, in order to obtain the same thermal runaway effect as that of the circuit of FIG. 12, the resistance value of the resistance element 4 may be 1/3 of the resistance value of each of the resistance elements 14a to 14c in the circuit of FIG. Therefore, the occupied area as an integrated circuit can be reduced as compared with that in the case of FIG. 12, and further, as described above, suppression of thermal runaway, suppression of non-uniform heat between cells, and A high-frequency power amplifier having the effect of high output can be obtained.

  FIG. 4 is a configuration diagram of a high-frequency power amplifier according to the third embodiment of the present invention, and the same parts as those in FIGS. 1 and 3 are indicated by the same reference numerals. That is, the capacitive elements 2a, 2b, and 2c are arranged at the base terminals of the three heterojunction bipolar transistors 1a, 1b, and 1c, respectively. Furthermore, diode elements 3a, 3b, and 3c are arranged with their anode terminals connected to the base terminals of the heterojunction bipolar transistors 1a, 1b, and 1c, respectively. Furthermore, the cathode terminals of the diode elements 3a, 3b, and 3c are connected in common, and the resistance element 4 is disposed at the common connection point. Further, the capacitive element 5 is disposed between the common connection point and the grounding point. The RF signal is applied to the bases of the respective transistors through the capacitive elements 2a, 2b, and 2c, and the DC voltage is applied to the bases of the respective transistors through the resistance element 4 as in the above-described embodiment.

  By configuring the high-frequency power amplifier in this way, the difference frequency current (spurious component current resulting from the nonlinearity of the transistor) generated when the digital modulation signal is input does not pass through the resistance element 4. Since it is grounded through 5, it is possible to obtain a low distortion characteristic as compared with the second embodiment. That is, according to this example, a high frequency power amplifier having all the effects of suppressing thermal runaway, suppressing unevenness of heat between cells, high output, and low distortion characteristics can be obtained. It is also possible to obtain a low distortion characteristic by adding the capacitive element 5 shown in FIG. 4 or 5 to the circuit configuration of FIG.

FIG. 5 is a configuration diagram of a high-frequency power amplifier according to the fourth embodiment of the present invention, and the same parts as those of the previous embodiment are denoted by the same reference numerals. That is, the capacitive elements 2a, 2b, and 2c are arranged at the base terminals of the three heterojunction bipolar transistors 1a, 1b, and 1c, respectively. Further, resistance elements 6a, 6b and 6c are arranged at the base terminals of the heterojunction bipolar transistors 1a, 1b and 1c, respectively. Further, the resistance elements 6a, 6b, 6c are connected in common, and the resistance element 4 is arranged at the common connection point. Further, the capacitive element 5 is disposed between the common connection point and the grounding point. An RF signal is applied to the base of each transistor through the capacitive elements 2a, 2b, and 2c, and a DC voltage is applied to the base of each transistor through the resistive element 4 and the resistive elements 6a to 6c.

By configuring the high frequency power amplifier in this way, the difference frequency current generated when the digital modulation signal is input can be grounded by the capacitive element 5. In order to obtain thermal stability, the resistance that causes the same potential drop as in the conventional example can be obtained from the following formula (6), but the resistance through which the difference frequency current passes is only R6 (6a, 6b, 6c). Thus, it is possible to obtain characteristics with lower distortion than the conventional example.
ΔVbej = -ΔIb · R6 -n · ΔIb · R4
= -ΔIb · (R6 + n · R4) (6)
Here, R6 is each resistance value (Ω) of the resistance elements 6a, 6b and 6c.

  FIG. 6 is a configuration diagram of a high-frequency power amplifier according to the fifth embodiment of the present invention, and the same parts as those of the previous embodiment are denoted by the same reference numerals. That is, the capacitive elements 2a, 2b, and 2c are arranged at the base terminals of the three heterojunction bipolar transistors 1a, 1b, and 1c, respectively. Furthermore, diode elements 3a, 3b, and 3c are arranged with their anode terminals connected to the base terminals of the heterojunction bipolar transistors 1a, 1b, and 1c, respectively. Furthermore, resistance elements 6a, 6b and 6c are arranged at the anode terminals of the respective diode elements. An RF signal is applied to the base of each transistor through the capacitive elements 2a, 2b, and 2c, and a DC voltage is applied to the base of each transistor through each of the resistance elements 6a to 6c and each of the diode elements 3a to 3c.

By configuring the high-frequency power amplifier in this way, not only the thermal non-uniform operation between cells is suppressed and high output power characteristics are obtained, but also the potential drop generated between the base emitters of each transistor is expressed by the following equation (7). As will be shown, the thermal runaway can be suppressed more than in the first embodiment.
ΔVbej = (− 1 / Vt) lnΔIb−nΔIb · R6 (7)
Further, since there are resistance components of the diode elements 3a to 3c, the resistance values of the resistance elements 6a to 6c can be smaller than the resistance values of the resistance elements 14a to 14c of FIG. It is possible to further reduce the occupation area in the process of conversion. It is obvious that the capacitor 5 of FIGS. 4 and 5 can be added to the configuration of FIG. 6 to achieve low distortion characteristics.

  FIG. 7 is a configuration diagram of a high-frequency power amplifier according to the sixth embodiment of the present invention, and the same parts as those of the previous embodiment are denoted by the same reference numerals. That is, the capacitive elements 2a, 2b, and 2c are arranged at the base terminals of the three heterojunction bipolar transistors 1a, 1b, and 1c, respectively. Furthermore, diode elements 3a, 3b, and 3c are arranged with their anode terminals connected to the base terminals of the heterojunction bipolar transistors 1a, 1b, and 1c, respectively. Furthermore, the cathode terminals of the diode elements 3a, 3b, and 3c are connected in common, and the resistance element 4 is disposed at the common connection point.

  Further, diode elements 7a, 7b and 7c are arranged with their anode terminals connected to the base terminals of the heterojunction bipolar transistors 1a, 1b and 1c, respectively, and the cathode terminals of the diode elements 7a, 7b and 7c are arranged. Grounded. Further, the diode elements connected to the respective bipolar transistors are thermally connected. For example, to explain the bipolar transistor 1a, the transistor 1a, the diode element 3a, and the diode element 7a are thermally coupled.

  Further, as shown in FIG. 8, resistance elements 8a, 8b and 8c may be connected between the respective diode elements 7a, 7b and 7c and the ground. The RF signal is applied to the base of each transistor through the capacitive elements 2a, 2b, and 2c, and the DC voltage is applied to the base of each transistor through the resistance element 4 and the diode elements 3a to 3c.

  Thus, by configuring the high-frequency power amplifier as shown in FIG. 7 or FIG. 8, thermal stability, high output power characteristics, and low distortion characteristics can be obtained. This is because the bipolar transistor and the diode element are thermally coupled. Since the bipolar transistor and each diode element are thermally coupled, for example, when the junction temperature of the transistor 1a increases, the threshold values of the transistor 1a, the diode element 3a, and the diode element 7a are lowered. When the threshold value of the transistor 1a is lowered, positive feedback of an increase in current is applied. However, since the threshold value of the diode element 7a is reduced, negative feedback is applied to the transistor 1a, and thermal runaway is suppressed.

  Furthermore, since the threshold voltage of the diode 3a is lowered, the terminal voltage between the cathode and the anode of the diode 3a is lowered, so that excessive current suppression is not caused and high output characteristics and low distortion characteristics can be obtained. . It is obvious that the configurations of FIGS. 7 and 8 can be applied to the configurations of FIGS.

  In each of the above-described embodiments, a configuration in which three bipolar transistors are connected in parallel is shown. However, this is merely to disclose an example and can be widely applied to a transistor amplifier including two or more transistors. It is clear that there is. Moreover, although the diode element was used as a nonlinear element, the element which has a characteristic equivalent to a diode element can be used.

  FIG. 9 is a configuration diagram of a high-frequency power amplifier according to the seventh embodiment of the present invention, and the same parts as those of the previous embodiment are denoted by the same reference numerals. That is, the capacitive elements 2a, 2b, and 2c are arranged at the base terminals of the three heterojunction bipolar transistors 1a, 1b, and 1c, respectively. Furthermore, heterojunction bipolar transistors 15a, 15b and 15c as three-terminal type non-linear elements are arranged with their emitter terminals connected to the base terminals of the heterojunction bipolar transistors 1a, 1b and 1c, respectively. An RF signal is applied to the bases of the transistors 1a, 1b, and 1c through the capacitive elements 2a, 2b, and 2c. A DC voltage is applied to the base terminals of the heterojunction bipolar transistors 15a, 15b, and 15c, and a DC voltage (DC2) different from the DC voltage is applied to the collector terminals. These DC voltages (DC and DC2) may be the same voltage. In this case, the heterojunction bipolar transistors 15a, 15b, and 15c are equivalent to the diode shown in FIG. It is clear that

  In such a configuration, the base-emitter voltages of the heterojunction bipolar transistors 15a, 15b, and 15c exhibit the same characteristics as those of the equation (4), and thus the same operational effects as those of the embodiment of FIG. Of course, the embodiments of FIGS. 3, 4, and 6 to 8 can also be applied to this embodiment.

It is a figure which shows the structure of the high frequency power amplifier which concerns on 1st embodiment of this invention. It is a figure which shows the part for which the voltage component to which the voltage between base emitters fluctuated at the time of adding a diode element and a resistive element to a base terminal is changed. It is a figure which shows the structure of the high frequency power amplifier which concerns on 2nd embodiment of this invention. It is a figure which shows the structure of the high frequency power amplifier which concerns on 3rd embodiment of this invention. It is a figure which shows the structure of the high frequency power amplifier which concerns on 4th embodiment of this invention. It is a figure which shows the structure of the high frequency power amplifier which concerns on 5th embodiment of this invention. It is a figure which shows the structure of the high frequency power amplifier which concerns on the 6th Embodiment of this invention. It is a figure which shows the structure of the high frequency power amplifier which concerns on the 6th Embodiment of this invention. It is a figure which shows the structure of the high frequency power amplifier which concerns on the 7th Embodiment of this invention. It is a figure which shows the thermal runaway of a bipolar transistor. It is a figure which shows the structure of the high frequency power amplifier using the conventional bipolar transistor. It is a figure which shows the current collapse of a bipolar transistor. It is a figure which shows the structure of the high frequency power amplifier using the conventional bipolar transistor.

Explanation of symbols

1a to 1c, 9, 15a to 15c Bipolar transistor 2a to 2c, 5, 10 Capacitance element 3a to 3c, 7a to 7b Diode element 4, 6a to 6c, 8a to 8c, 11 Resistance element

Claims (17)

A plurality of bipolar transistors;
A plurality of capacitive elements provided for each of the bipolar transistors, one end connected to the base terminal of the corresponding bipolar transistor and the other end connected to the input terminal;
A plurality of nonlinear elements provided for each of the bipolar transistors, one end connected to a base terminal of the corresponding bipolar transistor and the other end connected to a DC terminal;
A transistor amplifier comprising: A plurality of bipolar transistors;
A plurality of capacitive elements provided for each of the bipolar transistors, one end connected to the base terminal of the corresponding bipolar transistor and the other end connected to the input terminal;
A plurality of nonlinear elements provided for each of the bipolar transistors, one end of which is connected to the base terminal of the corresponding bipolar transistor;
A resistance element having one end connected to a common connection point at the other end of each of the nonlinear elements, and the other end connected to a DC terminal;
A transistor amplifier comprising:   3. The transistor amplifier according to claim 1, further comprising a capacitive element having one end connected to the common connection point and the other end connected to a reference potential point. A plurality of bipolar transistors;
A plurality of capacitive elements provided for each of the bipolar transistors, one end connected to the base terminal of the corresponding bipolar transistor and the other end connected to the input terminal;
A plurality of resistance elements provided for each of the bipolar transistors, one end of which is connected to a base terminal of the corresponding bipolar transistor;
A resistance element having one end connected to a common connection point of each of the resistance elements and the other end connected to a DC terminal;
A transistor amplifier comprising:   5. The transistor amplifier according to claim 4, further comprising a capacitive element having one end connected to the common connection point and the other end connected to a reference potential point.   The semiconductor device further includes a plurality of nonlinear elements provided for each of the bipolar transistors, one end of which is connected to a base terminal of the corresponding bipolar transistor and the other end of which is connected to the reference potential point. Item 6. The transistor amplifier according to any one of Items 1 to 5.   7. The transistor amplifier according to claim 1, wherein the nonlinear element is a diode element.   7. The transistor amplifier according to claim 1, wherein the non-linear element includes a diode element and a resistance element connected in series.   9. The transistor amplifier according to claim 7, wherein the diode element comprises a base layer and a collector layer of the bipolar transistor.   9. The transistor amplifier according to claim 7, wherein the diode element comprises a base layer, a collector layer, and a subcollector layer of the bipolar transistor.   9. The transistor amplifier according to claim 7, wherein the diode element comprises a base layer and an emitter layer of the bipolar transistor.   9. The transistor amplifier according to claim 7, wherein the diode element is composed of a collector layer and a metal of the bipolar transistor.   9. The transistor amplifier according to claim 2, wherein the resistance element is made of any one of WSi, WSiN, TaN, and NiCr.   9. The transistor amplifier according to claim 2, wherein the resistance element is composed of any one of an emitter layer, a base layer, a collector layer, and a subcollector layer of the bipolar transistor.   9. The transistor amplifier according to claim 2, wherein the resistance element is composed of a polycrystalline silicon layer. A plurality of bipolar transistors;
A plurality of capacitive elements provided for each of the plurality of bipolar transistors, one end connected to the base terminal of the corresponding bipolar transistor and the other end connected to the input terminal;
A plurality of three-terminal nonlinear elements provided for each of the plurality of bipolar transistors;
One end of the plurality of nonlinear elements is connected to a base terminal of a corresponding bipolar transistor, and the other two terminals are connected to a plurality of DC terminals.   17. The transistor amplifier according to claim 16, wherein the nonlinear element is a bipolar transistor.

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