JP2005170869A - Organosilicon compound, solution raw material thereof and method for forming silicon-containing film by using the compound - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organosilicon compound having excellent evaporation stability and a high film-forming rate, and enabling the film to be grown at a temperature lower than that by a conventional organosilicon compound; to provide a solution raw material of the compound; and to provide a method for producing a silicon-containing film by using the compound. <P>SOLUTION: The organosilicon compound is represented by formula (1) (wherein, R is hydrogen or a 1-4C straight-chain or branched alkyl group). The solution raw material is obtained by dissolving the organosilicon compound represented by formula (1) in an organic solvent. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to an SiO ₂ film, Si—N film, Hf—Si—O film, and Hf—Si— film formed by metal organic chemical vapor deposition (hereinafter referred to as MOCVD method). The present invention relates to an organic silicon compound suitable as a raw material for a silicon-containing film such as an O—N film, a solution raw material thereof, and a method for forming a silicon-containing film using the compound.

Although a silicon oxide film is used as the high dielectric gate insulating film, in recent years, the silicon oxide film is becoming thinner as the LSI is highly integrated. Since a tunnel current flows through a thin film having a thickness of 100 nm or less and the insulation effect is lowered, further reduction in the thickness of the silicon oxide film is limited.
Therefore, there is a demand for a gate insulating film that replaces the silicon oxide film, and silicon-containing thin films, specifically, Si—N films, Hf—Si—O films, Hf—Si—O—N films, etc. are attracting attention as candidates. Yes. These thin film manufacturing methods include MOD (Metal Organic Deposition) such as sputtering, ion plating, coating pyrolysis, sol-gel, etc., but excellent composition controllability and step coverage, and consistency with semiconductor manufacturing processes. Therefore, the MOCVD method has been studied as an optimum thin film manufacturing process.

As a material for forming a silicon-containing film such as an Si—N film or an Hf—O—Si film, hexachlorodisilane (hereinafter referred to as Si ₂ Cl ₆ ) is generally used. For example, in the case of forming a Si ₃ N ₄ film, it can be obtained by heating and reacting Si ₂ Cl ₆ and NH ₃ . This reaction product, Si ₃ N ₄ , does not all adhere to the substrate, but part of it adheres to the exhaust pipe of the film forming apparatus. For this reason, when the film formation process is performed in a state in which the attached matter is attached, the attached matter is eventually peeled off to generate particles. If these particles adhere to a silicon substrate or the like, the yield of the product may be reduced. For this reason, a maintenance operation is periodically performed in which the inside of the film forming apparatus is washed with a hydrofluoric acid-based solution or the like to remove deposits.

When this Si ₂ Cl ₆ and NH ₃ are heated and reacted, not only Si—N but also a compound composed of Si—Cl—N—H is produced as a reaction intermediate. The reaction intermediate is contained in exhaust gas and deposits passing through the exhaust pipe. This reaction intermediate is easily hydrolyzed, releasing hydrochloric acid and heat of reaction to form a hydrolyzate. Therefore, in the maintenance work, if the exhaust pipe is removed while the reaction intermediate is adhered, there is a problem that the reaction intermediate causes hydrolysis with moisture in the atmosphere, and hydrochloric acid gas is generated.

As a measure for solving the above problem, the object to be processed is accommodated in the reaction chamber, the gas in the reaction chamber is exhausted from the exhaust pipe connected to the reaction chamber, and Si ₂ Cl ₆ and NH ₃ are exhausted in the reaction chamber. A method for supplying and forming a Si—N film on an object to be processed, wherein the exhaust pipe is heated to a temperature at which NH ₄ Cl can be vaporized, and NH ₃ is supplied to the exhaust pipe. Is disclosed (for example, see Patent Document 1). In the above literature 1, NH ₃ is supplied to the exhaust pipe so that the reaction intermediate produced during the reaction reacts with NH ₃ to form a compound composed of Si—N—H that hardly generates hydrochloric acid gas. The generation of poisonous gas is suppressed.
JP 2002-334869 A (Claim 5, paragraph [0043])

However, when a film is formed by a thermal CVD method using a chlorine-containing Si—Si compound such as Si ₂ Cl ₆ disclosed in Patent Document 1, a radical having a Si—Cl bond is first cut off from the Si—Si bond. Although seeds are formed, the Si—Cl bond is difficult to break even under film forming conditions at a high temperature such as 700 ° C., and Cl has entered the film to be formed. The Cl that has entered the film increases the stress generated by the film formation temperature, causes cracks in the film, and decreases the yield.
In addition, by forming the film under a low temperature condition of 700 ° C. or lower, even if the stress caused by the film forming temperature is suppressed and the generation of cracks is reduced, the amount of Cl entering the film increases due to the film formation under the low temperature condition. However, when the amount of Cl that has entered the film increases, the film strength also weakens, and it is difficult to form a flat film.
Further, since this Si ₂ Cl ₆ is ignitable in the air and handling thereof involves danger, an alternative compound has been demanded.

An object of the present invention is to provide an organic silicon compound having excellent vaporization stability and a high film formation rate, a solution raw material thereof, and a method for forming a silicon-containing film using the compound.
Another object of the present invention is to provide an organic silicon compound capable of growing a film at a lower temperature than conventional organic silicon compounds, a solution raw material thereof, and a method for forming a silicon-containing film using the compound.

  The invention according to claim 1 is an organosilicon compound represented by the following formula (1).

但し、式中のＲは水素又は炭素数が１〜４の直鎖又は分岐状アルキル基を示す。

However, R in a formula shows hydrogen or a C1-C4 linear or branched alkyl group.

  In the compound according to claim 1, an unstable structure in which two cyclopentadienyl groups (hereinafter referred to as Cp groups) or alkylcyclopentadienyl groups (hereinafter referred to as alkyl Cp groups) are π-bonded to a silicon atom. Therefore, it decomposes at a lower temperature than conventional organic silicon compounds. When a silicon-containing film is formed using this compound, it can be formed at a temperature lower than the film formation temperature when a conventional organic silicon compound is used, specifically, a temperature of about 300 to 400 ° C. Therefore, the substrate on which the film is formed is not damaged, the vaporization stability is excellent, and the silicon-containing film can be formed at a high film formation rate.

In the invention according to claim 2, R of the organic silicon compound represented by the formula (1) according to claim 1 is a linear or branched alkyl group having 1 to 4 carbon atoms, and consists of a single organic silicon compound. A solution raw material for forming a silicon-containing film.
In the solution raw material according to claim 2, since the organic silicon compound in which R in the formula (1) is a linear or branched alkyl group having 1 to 4 carbon atoms exists as a liquid at room temperature, It can be used as a solution raw material for forming a silicon-containing film.

The invention according to claim 3 is a solution raw material for forming a silicon-containing film, wherein the organic silicon compound according to claim 1 is dissolved in an organic solvent.
The invention according to claim 4 is the invention according to claim 3, wherein the organic solvent is tetrahydrofuran, methyltetrahydrofuran, n-octane, isooctane, hexane, cyclohexane, methylcyclohexane, ethylcyclohexane, pyridine, lutidine, butyl acetate, acetic acid. The solution raw material is one or more solvents selected from the group consisting of amyl, methyl acetate and ethyl acetate.
In the solution raw material according to claim 3 or 4, the solution raw material in which the organic silicon compound of the present invention is dissolved in the above-described organic solvent can send the organic silicon compound to the vaporization chamber or the film formation chamber more stably. As a result, the growth rate of the thin film in MOCVD is promoted.

The invention according to claim 5 is a method for forming a silicon-containing film, characterized in that the silicon-containing film is formed using the organosilicon compound according to claim 1 or the solution raw material according to any one of claims 2 to 4. is there.
In the forming method according to claim 5, a conventional organic silicon compound is used by forming a silicon-containing film using the organic silicon compound of the present invention represented by the above formula (1) or a solution raw material containing this compound. Since the film can be formed at a film formation temperature of about 300 to 400 ° C. lower than the film formation temperature in the case, the substrate on which the film is formed is not damaged. Moreover, it is excellent in vaporization stability, and a silicon-containing film can be formed at a high film formation rate.
The invention according to claim 6 is the invention according to claim 5, wherein the silicon-containing film is formed by MOCVD.

  As described above, the organosilicon compound of the present invention has an unstable structure in which two π-coordinate cyclopentadienyl groups or alkylcyclopentadienyl groups are bonded to a silicon atom. Decomposes at a lower temperature than the compound. When a silicon-containing film is formed using this compound or a solution raw material containing this compound, the film can be formed at a temperature lower than the film formation temperature when a conventional organic silicon compound is used. Does not damage the board. Moreover, it is excellent in vaporization stability, and a silicon-containing film can be formed at a high film formation rate.

Next, the best mode for carrying out the present invention will be described with reference to the drawings.
The organosilicon compound of the present invention is a compound represented by the following formula (1).

但し、式中のＲは水素又は炭素数が１〜４の直鎖又は分岐状アルキル基を示す。

However, R in a formula shows hydrogen or a C1-C4 linear or branched alkyl group.

  Since the compound represented by the above formula (1) has an unstable structure in which two Cp groups or alkyl Cp groups are π-bonded to a silicon atom, it decomposes at a lower temperature than conventional organic silicon compounds. When a silicon-containing film is formed using this compound, it can be formed at a temperature lower than the film formation temperature when a conventional organic silicon compound is used, specifically, a temperature of about 300 to 400 ° C. Therefore, the substrate on which the film is formed is not damaged. Moreover, it is excellent in vaporization stability, and a silicon-containing film can be formed at a high film formation rate.

Next, among the organosilicon compounds of the present invention, a method for producing Si (Cp) ₂ in which R in the formula (1) is hydrogen will be described.
First, 10 g of SiCl ₄ is prepared as a starting material. Next, 200 ml of a 1.0 molar tert-butyllithium hexane solution is slowly added to SiCl ₄ kept under an inert gas stream while being cooled to ice cooling, and directly reacted. After the hexane solution is added, the solution is kept stirring for 1 hour to produce a precipitate. After stirring, the precipitate formed in the hexane solution is filtered off. Next, 5 ml of dicyclopentadiene and 2 g of aluminum stearate are added to the filtrate obtained by filtering the precipitate, and stirring is continued for about 24 hours while heating to about 40 ° C. The stirred liquid is a suspension, and the suspension is filtered to separate the solution. Next, the filtered solution is cooled to −45 ° C., and a mixed gas containing Ar and H ₂ is continuously bubbled into the cooled solution for 24 hours. As the mixed gas, a gas prepared by adding H ₂ at a ratio of 2 ml to 100 ml of Ar is used. After bubbling, hexane contained in the solution is removed to obtain a crude product of Si (Cp) ₂ . Further, the crude product is dissolved in a developing solvent to prepare a solution. As a developing solvent, 200 ml of hexane is used. By passing this solution through an alumina column or the like, about 3 g of the purified product of Si (Cp) ₂ of the present invention can be obtained.

When R of the organic silicon compound of the present invention is a linear or branched alkyl group having 1 to 4 carbon atoms, the organic silicon compound alone can be used as a solution raw material for forming a silicon-containing film. Since the organic silicon compound in which R in the above formula (1) is a linear or branched alkyl group having 1 to 4 carbon atoms exists as a liquid at room temperature, these compounds are used alone as a solution raw material for forming a silicon-containing film. Can be used.
Further, the organic silicon compound of the present invention may be dissolved in an organic solvent to form the solution raw material of the present invention. The solution raw material in which the organosilicon compound of the present invention is dissolved in an organic solvent can send the organosilicon compound more stably to the vaporization chamber and the film formation chamber, and as a result, the growth rate of the thin film in MOCVD is promoted. . As the organic solvent, one selected from the group consisting of tetrahydrofuran, methyltetrahydrofuran, n-octane, isooctane, hexane, cyclohexane, methylcyclohexane, ethylcyclohexane, pyridine, lutidine, butyl acetate, amyl acetate, methyl acetate and ethyl acetate or Two or more solvents can be mentioned.

  In the solid sublimation method in which a solid organic silicon compound is vaporized by heating under reduced pressure as it is at room temperature, it is necessary to heat all the pipes in the apparatus, and if there are unheated parts, they will precipitate in the pipes. As a result, the piping may be blocked. In addition, since the material is stored for a long time in a heated state, the material is changed in quality and is difficult to be vaporized. On the other hand, when the organic silicon compound is dissolved in an organic solvent and used as a solution raw material, the raw material can be supplied to the vaporization chamber at room temperature, so there is no blockage of the piping, and the time during which the raw material is heated is shortened. Since the raw material can be supplied stably, the film formation rate is accelerated.

The method for forming a silicon-containing film of the present invention is characterized by forming a film using the organosilicon compound of the present invention or the solution raw material of the present invention. By forming a silicon-containing film using the organic silicon compound of the present invention or a solution raw material containing this compound, the film can be formed at a temperature lower than the film formation temperature when a conventional organic silicon compound is used. The substrate on which the film is formed is not damaged. Moreover, it is excellent in vaporization stability, and a silicon-containing film can be formed at a high film formation rate.
The organic silicon compound thus obtained forms a silicon-containing film on a substrate, for example, a silicon substrate, using MOCVD. Among the organosilicon compounds represented by the above formula (1), when R is a linear or branched alkyl group having 1 to 4 carbon atoms, since it is liquid at room temperature, a thermal CVD method is suitable.

Next, a method for forming a silicon-containing film using an organic silicon compound will be described using a method for forming a Si—N film using MOCVD as an example.
As shown in FIG. 1, the MOCVD apparatus includes a film formation chamber 10 and a vapor generator 11. A heater 12 is provided inside the film forming chamber 10, and a substrate 13 is held on the heater 12. The inside of the film forming chamber 10 is evacuated by a pipe 17 including a pressure sensor 14, a cold trap 15 and a needle valve 16. An NH ₃ gas introduction pipe 37 is connected to the film forming chamber 10 via a needle valve 36 and a gas flow rate adjusting device 34. When the film formed here is a thin film containing oxygen such as a SiO ₂ film, O ₂ gas is introduced from the gas introduction pipe 37. The steam generator 11 is provided with a raw material container 18 for storing the organosilicon compound or solution raw material of the present invention. A pressurizing inert gas introduction pipe 21 is connected to the raw material container 18 via a gas flow rate control device 19, and a supply pipe 22 is connected to the raw material container 18. The supply pipe 22 is provided with a needle valve 23 and a flow rate adjusting device 24, and the supply pipe 22 is connected to the vaporization chamber 26. A carrier gas introduction pipe 29 is connected to the vaporizing chamber 26 via a needle valve 31 and a gas flow rate adjusting device 28. The vaporizing chamber 26 is further connected to the film forming chamber 10 by a pipe 27. A gas drain 32 and a drain 33 are connected to the vaporizing chamber 26, respectively.
In this apparatus, an inert gas for pressurization is introduced into the raw material container 18 from the introduction pipe 21, and the raw material liquid stored in the raw material container 18 is conveyed to the vaporization chamber 26 through the supply pipe 22. The organosilicon compound that has been vaporized in the vaporizing chamber 26 to become vapor is further supplied into the film forming chamber 10 through the pipe 27 by the carrier gas introduced into the vaporizing chamber 26 from the carrier gas introduction pipe 29. Argon, helium, nitrogen, or the like is used as the inert gas for pressurization and the carrier gas. In the film forming chamber 10, the vapor of the organic silicon compound is thermally decomposed and reacted with NH ₃ gas introduced from the NH ₃ gas inlet tube 37, deposited on the substrate 13 which is heated and the resulting Si-N Thus, a Si—N film is formed. Since the organic silicon compound of the present invention is thermally decomposed at a lower temperature than conventional organic silicon compounds, film growth at a low temperature is possible. The organosilicon compound of the present invention is excellent in vaporization stability and has a high film formation rate.

Further, a method for forming a Hf—Si—O film will be described as an example.
As shown in FIG. 2, a raw material container 38 for storing a solution raw material containing, for example, an organic hafnium compound, different from the organic silicon compound of the present invention, is provided in the vapor generating apparatus 11 of the MOCVD apparatus of FIG. 38 is connected to an inert gas introduction pipe 41 for pressurization via a gas flow rate control device 39, and a supply pipe 42 is connected to the raw material container 38. The supply pipe 42 is provided with a needle valve 43 and a flow rate adjusting device 44, and the supply pipe 42 is connected to the vaporization chamber 26. In this way, the connection is made in the same arrangement as the pipe connected to the raw material container 18 for storing the organic silicon compound, and O ₂ gas is introduced from the gas introduction pipe 37.

In this apparatus, the organic silicon compound and the organic hafnium compound, which are respectively transferred from the raw material containers 18 and 38 to the vaporization chamber and become vapor, are supplied into the film formation chamber 10. The vapor of the organic hafnium compound is thermally decomposed and reacted with O ₂ introduced from the O ₂ gas introduction pipe 37 to deposit the generated Hf—Si—O on the heated substrate 13 to form Hf—Si—. An O thin film is formed.

Next, examples of the present invention will be described in detail together with comparative examples.
<Example 1>
First, SiCl ₄ is prepared as a starting material, and a hexane solution of 1.0 molar t-butyllithium is slowly added to SiCl ₄ kept under an inert gas stream while cooling to ice cooling. Reacted. Subsequently, the reaction solution was continuously stirred for 1 hour to form a precipitate. The precipitate formed in the hexane solution was filtered, dicyclopentadiene and aluminum stearate were added to the filtrate, and the mixture was stirred for about 24 hours while being heated to about 40 ° C. Next, the stirred stirring liquid was filtered to separate the solution, the filtered solution was cooled to −45 ° C., and a mixed gas containing Ar and H ₂ was continuously bubbled into the solution for 24 hours. After bubbling, hexane contained in the solution was removed to obtain a crude product. Further, the crude product was dissolved in a developing solvent to prepare a solution, and the solution was passed through an alumina column or the like to obtain a purified product. The obtained purified product was measured by ¹ H-NMR (C ₆ D ₆ ) and found to be δ = 1.3 ppm (C—H) and δ = 2.3 ppm (C—H). The compound obtained from the above analysis results was identified as Si (Cp) ₂ .

<Example 2>
A reaction was carried out in the same manner as in Example 1 except that methyldicyclopentadiene was used in place of dicyclopentadiene to obtain Si (MeCp) ₂ .
<Example 3>
Synthesis was carried out in the same manner as in Example 1 except that ethyldicyclopentadiene was used in place of dicyclopentadiene to obtain Si (EtCp) ₂ .
<Example 4>
Synthesis was performed in the same manner as in Example 1 except that n-propyldicyclopentadiene was used in place of dicyclopentadiene to obtain Si (n-PrCp) ₂ .
<Example 5>
Synthesis was performed in the same manner as in Example 1 except that i-propyldicyclopentadiene was used in place of dicyclopentadiene to obtain Si (i-PrCp) ₂ .
<Example 6>
Synthesis was performed in the same manner as in Example 1 except that n-butyldicyclopentadiene was used in place of dicyclopentadiene to obtain Si (n-BuCp) ₂ .
<Example 7>
Synthesis was performed in the same manner as in Example 1 except that t-butyldicyclopentadiene was used in place of dicyclopentadiene to obtain Si (t-BuCp) ₂ .

<Comparative Example 1>
Si ₂ Cl ₆ was prepared, and this compound was used as an organic silicon compound as it was.
<Comparative example 2>
Me (NEt ₂ ) ₂ Si—Si (NEt ₂ ) ₂ Me was prepared, and this compound was used as an organosilicon compound.

<Comparison evaluation 1>
The organic silicon compound simple substance obtained in each of Examples 2 to 7 was directly used as a solution raw material. Moreover, the organic silicon compounds of Examples 1 to 7 and Comparative Examples 1 and 2 were dissolved in the organic solvents shown in Table 1 below to prepare 0.1 mol / L solution raw materials. A film thickness test per film formation time was performed using these solution raw materials.
First, five silicon substrates were prepared as substrates, and the substrates were placed in the film formation chamber of the MOCVD apparatus shown in FIG. Subsequently, the substrate temperature was set to 450 ° C., the vaporization temperature was set to 100 ° C., and the pressure was set to about 266 Pa (2 Torr). NH ₃ gas was used as a reaction gas, and its partial pressure was 100 ccm. Next, Ar gas is used as a carrier gas, and solution raw materials are respectively supplied at a rate of 0.05 cc / min. When the film formation time is 1 minute, 2 minutes, 3 minutes, 4 minutes and 5 minutes, respectively. One sheet was taken out from the film forming chamber.
-Film thickness test per film formation time The film thickness of the Si-N thin film on the substrate after film formation was measured from a cross-sectional SEM (scanning electron microscope) image.
<Evaluation>
The obtained film thickness results per film formation time are shown in Table 1, respectively.

  As is clear from Table 1, it can be seen that the solution raw materials using the organic silicon compounds of Comparative Examples 1 and 2 do not increase the film thickness of the Si—N film even with time, and the film formation stability is poor. . On the other hand, in the solution raw material using the organic silicon compounds of Examples 1 to 7, the film thickness per film formation time was uniform, and the film formation stability was high. Further, it was found that the film formation rate was very high because a thick film was formed as compared with the films formed in Comparative Examples 1 and 2.

<Comparison evaluation 2>
The organic silicon compound simple substance obtained in Example 3 and Comparative Example 2 was prepared as a solution raw material as it was. Moreover, the organosilicon compound of Example 3 and Comparative Example 2 was dissolved in THF to prepare a 0.1 mol / L THF solution. A thermal stability test was conducted using these solution raw materials.
First, a flanged vacuum vessel with a valve made of SUS316 was prepared, and a solution raw material maintained at 25 ° C. was introduced into the vessel, and the vessel was sealed. Subsequently, the space inside the sealed container was decompressed by an aspirator, and the pressure inside the container was adjusted to about 2.66 × 10 ³ Pa (20 Torr). Then, after the sealed container was heated to raise the temperature of the solution material inside from 25 ° C. to 100 ° C., the operation of lowering the temperature again to 25 ° C. was defined as one cycle of temperature fluctuation, and this thermal cycle was performed for 4 cycles. Next, after this cycle, the pressure inside the container was adjusted to about 2.66 × 10 ² Pa (2 Torr), the temperature was raised to 100 ° C., and the solution raw material was heated and evaporated. After the solution raw material is evaporated by heating, the valve of the sealed container is opened, Ar gas is introduced into the container, and the pressure inside the container is returned to almost atmospheric pressure (about 1013 hPa (760 Torr)). The residue remaining on the bottom of the container without opening and evaporating was measured with an electronic balance. Table 2 shows the amounts of residues when the organosilicon compound introduced into the container is 100% by weight.

  As is apparent from Table 2, many residues were generated in the solution raw material of Comparative Example 2, and a result with poor thermal stability was obtained. When a silicon-containing film is formed using a sample having such poor thermal stability, a high-quality film may not be obtained. On the other hand, it was found that the solution raw material of Example 3 produced almost no residue and high thermal stability was obtained. Further, when comparing the solution raw material dissolved in the organic solvent with the solution raw material consisting of the organic silicon compound alone, the solution raw material dissolved in the organic solvent has less residue and less heat in both the solution raw materials of Example 3 and Comparative Example 2. It was also found to be excellent in stability.

<Comparison evaluation 3>
Using the solution raw material used in Comparative Evaluation 1, a film thickness test per film formation time was performed.
First, five silicon substrates were prepared as substrates, and the substrates were placed in the film formation chamber of the MOCVD apparatus shown in FIG. Next, the substrate temperature was set to 450 ° C., the vaporization temperature was set to 140 ° C., and the pressure was set to about 266 Pa (2 Torr). O ₂ gas was used as a reaction gas, and its partial pressure was 100 ccm. Next, Ar gas is used as a carrier gas, a solution raw material is supplied at a rate of 0.05 cc / min, and Hf (Et ₂ N) ₄ is supplied as an organic hafnium compound at a rate of 0.05 cc / min. Was taken out from the film forming chamber one by one when the time became 1, 5, 10, 20, and 30 minutes.
-Film thickness test per film formation time The film thickness of the Hf-Si-O thin film on the substrate after film formation was measured from a cross-sectional SEM (scanning electron microscope) image.
<Evaluation>
Table 3 shows the obtained film thickness results per film formation time.

  As is apparent from Table 3, the solution raw materials using the organic silicon compounds of Comparative Examples 1 and 2 do not increase the thickness of the Hf—Si—O film even with time, and the film formation stability is poor. I understand. On the other hand, in the solution raw material using the organic silicon compounds of Examples 1 to 7, the film thickness per film formation time was uniform, and the film formation stability was high. Further, it was found that the film formation rate was very high because a thick film was formed as compared with the films formed in Comparative Examples 1 and 2.

Schematic of the MOCVD apparatus. The schematic of the MOCVD apparatus which has another structure.

Claims (6)

An organosilicon compound represented by the following formula (1).

However, R in a formula shows hydrogen or a C1-C4 linear or branched alkyl group. R of the organosilicon compound represented by formula (1) according to claim 1 is a linear or branched alkyl group having 1 to 4 carbon atoms,
A solution raw material for forming a silicon-containing film comprising the organic silicon compound alone.   A solution raw material for forming a silicon-containing film, wherein the organosilicon compound according to claim 1 is dissolved in an organic solvent.   One or two organic solvents selected from the group consisting of tetrahydrofuran, methyltetrahydrofuran, n-octane, isooctane, hexane, cyclohexane, methylcyclohexane, ethylcyclohexane, pyridine, lutidine, butyl acetate, amyl acetate, methyl acetate and ethyl acetate The solution raw material according to claim 3, wherein the solution raw material is a seed or more solvent.   A method for forming a silicon-containing film, comprising forming a film using the organosilicon compound according to claim 1 or the solution raw material according to any one of claims 2 to 4. 6. The method for forming a silicon-containing film according to claim 5, wherein the film is formed by metal organic chemical vapor deposition.

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