JP2005170756A - Dielectric ceramic composition for high frequency and electronic component using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dielectric ceramic composition for high frequency which can be sintered at a low temperature and co-fired with a low resistance electrode material, and which has excellent dielectric constant, Q-value and dielectric characteristics; and to provide an electronic component using the same. <P>SOLUTION: The dielectric ceramic composition for high frequency contains 60-99 wt.% ceramic component expressed by compositional formula: Ba<SB>1-X</SB>Sr<SB>X</SB>[Me<SB>1/3</SB>(Sb<SB>1-Y</SB>Nb<SB>Y</SB>)<SB>2/3</SB>]<SB>V</SB>O<SB>3</SB>(wherein, 0≤X≤0.3, 0≤Y≤0.9, 0.9≤V≤1.1, Me is Mg or a metal obtained by substituting a portion of Mg with at least one kind of Zn, Ni, Mn and Co) and 1-40 wt.% glass component. The glass component contains SiO<SB>2</SB>, B<SB>2</SB>O<SB>3</SB>, Al<SB>2</SB>O<SB>3</SB>, EO (wherein, E is at least one kind of metal selected from alkaline earth metals of Mg, Ca, Sr and Ba, and Zn) and A<SB>2</SB>O (wherein, A is at least one kind of alkaline metal selected from Li, Na and K). The weight ratio of each oxide satisfies following relation: 10≤SiO<SB>2</SB>≤60, 5≤B<SB>2</SB>O<SB>3</SB>≤40, 0≤Al<SB>2</SB>O<SB>3</SB>≤30, 20≤EO≤70, or 0≤A<SB>2</SB>O≤15. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a dielectric ceramic composition for high frequency and an electronic component using the same, and more particularly, has a high Q value and environmental reliability in a high frequency region such as a microwave and a millimeter wave, The present invention relates to a dielectric ceramic composition for high frequency that can be co-sintered and an electronic component using the same.

  As a conventional high frequency dielectric ceramic composition of this type, for example, the one proposed in Patent Document 1 is known.

Patent Document 1 discloses a composition formula 3 (Ba _1-x Sr _x ) O. (Zn _1-y Mg _y ) O. (1-z) Nb ₂ O ₅ .zSb ₂ O ₅ (in the formula, 0. 4 <x <0.8, 0 <y <1, 0 <z <0.20.) A dielectric ceramic composition comprising barium, strontium, zinc, magnesium, niobium, antimony and oxygen is represented. Proposed. This dielectric ceramic composition can be suitably used as a dielectric resonator material used in the 0.1 to 5 GHz band, has a high dielectric constant, a large Q value, and a stable temperature change rate of the resonance frequency. Good sex.

  In the case of a resonator used in a high frequency region, it is generally necessary to use a low-resistance and inexpensive metal such as Ag or Cu as an electrode material. Therefore, the dielectric ceramic composition has a melting point of these metals. It is necessary to fire at a lower temperature.

JP-A-6-260031

  However, the dielectric ceramic composition described in Patent Document 1 needs to be fired at 1500 to 1650 ° C. in an air atmosphere when the molded body is fired, but low resistance electrode materials such as Ag and Cu are The melting point was 960 to 1063 ° C., which was significantly lower than the firing temperature of the dielectric ceramic composition, and there was a problem that it could not be co-sintered with such a dielectric ceramic composition.

  The present invention has been made to solve the above-mentioned problems, and can be sintered at a low temperature, can be co-fired with a low-resistance electrode material, and has high dielectric constant, Q value, and excellent dielectric characteristics. It is an object to provide a dielectric ceramic composition for use and an electronic component using the same.

The dielectric ceramic composition for high frequency according to claim 1 of the present invention has a composition formula of Ba _1-X Sr _X [Me _1/3 (Sb _1-Y Nb _Y ) _2/3 ] _V O ₃ (however, 0 ≦ X ≦ 0.3, 0 ≦ Y ≦ 0.9, 0.9 ≦ V ≦ 1.1, Me is Mg or a part of Mg substituted with at least one of Zn, Ni, Mn and Co ) -Containing dielectric ceramic composition containing 60 to 99% by weight of a ceramic component and 1 to 40% by weight of a glass component, wherein the glass components are SiO ₂ , B ₂ O ₃ , Al _2. O ₃ , EO (where E is an alkaline earth metal of Mg, Ca, Sr, Ba and at least one metal of Zn) and A ₂ O (where A is at least one alkali metal of Li, Na and K) includes, and the content of each oxide in a weight ratio, 10 ≦ SiO And it is characterized in satisfying the relationship _{≦ 60,5 ≦ B 2 O 3 ≦} 40,0 ≦ Al 2 O 3 ≦ 30,20 ≦ EO ≦ 70,0 ≦ A 2 O ≦ 15.

The high frequency dielectric ceramic composition according to claim 2 of the present invention is characterized in that, in the invention according to claim 1, TiO ₂ is added in an amount of 0 to 0 with respect to a total of 100 parts by weight of the ceramic component and the glass component. It contains 15 parts by weight.

  The dielectric ceramic composition for high frequency according to claim 3 of the present invention is the invention according to claim 1, wherein 0 to 5 parts by weight of CuO is added to 100 parts by weight of the total of the ceramic component and the glass component. It is characterized by including.

  According to a fourth aspect of the present invention, there is provided an electronic component comprising a high frequency dielectric ceramic and a conductor disposed in the high frequency dielectric ceramic, wherein the high frequency dielectric is the electronic component. The porcelain is formed of the dielectric ceramic composition for high frequency according to any one of claims 1 to 3 and is fired at 1000 ° C. or less.

  An electronic component according to a fifth aspect of the present invention is the electronic component according to the fourth aspect, wherein the high frequency dielectric ceramic is formed by firing a laminated body in which a plurality of ceramic sheets are laminated. To do.

  The electronic component according to a sixth aspect of the present invention is the electronic component according to the fifth aspect, wherein the conductor is obtained by firing a conductive paste applied in a predetermined pattern on the ceramic sheet. It is a feature.

  The electronic component according to claim 7 of the present invention is characterized in that, in the invention, the conductor according to any one of claims 4 to 6 contains Ag or Cu as a main component. is there.

  An electronic component according to an eighth aspect of the present invention is the electronic component according to any one of the fourth to seventh aspects, wherein the electronic component is a filter.

Thus, the ceramic component constituting the high frequency dielectric ceramic composition of the present invention has a composition formula of Ba _1-X Sr _X [Me _1/3 (Sb _1-Y Nb _Y ) _2/3 ] _V O _3. It is represented by In the composition formula of the ceramic component, X, Y, and V satisfy 0 ≦ X ≦ 0.3, 0 ≦ Y ≦ 0.9, and 0.9 ≦ V ≦ 1.1, respectively. When X in the composition formula exceeds 0.3, the temperature change rate τ _f of the resonance frequency (about 6 GHz) as the high frequency dielectric ceramic composition becomes too large. When Y in the composition formula exceeds 0.9, the temperature change rate τ _{f of the} resonance frequency becomes too large. Further, when the V in the composition formula is less than 0.9 or exceeds 1.0, the Q value decreases from 10,000.

  Me in the composition formula of the ceramic component is obtained by substituting Mg or a part of Mg with at least one of Zn, Ni, Mn, and Co. When Me does not contain Mg and only consists of Zn, Ni, Mn, and Co, the ceramic component does not sinter, so Me needs to contain at least Mg. Ceramic components not containing Mg as Me are not sintered.

The glass components include SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , EO (where E is an alkaline earth metal of Mg, Ca, Sr, Ba and at least one metal of Zn) and A ₂ O (provided that , A is at least one alkali metal of Li, Na, and K), and the content of each oxide is 10 ≦ SiO ₂ ≦ 60, 5 ≦ B ₂ O ₃ ≦ 40, 0 ≦ Al. The relationship of ₂ O ₃ ≦ 30, 20 ≦ EO ≦ 70, and 0 ≦ A ₂ O ≦ 15 is satisfied. When SiO ₂ is less than 10 in weight ratio, the moisture resistance is lowered. Conversely, when the weight ratio exceeds 60, the softening temperature of the glass component is increased and the sinterability is lowered. When B ₂ O ₃ is less than 5 in weight ratio, the softening temperature of the glass component is increased and the sinterability is lowered. Conversely, when B ₂ O ₃ exceeds 40 weight ratio, moisture resistance is lowered. Further, Al ₂ O ₃ is the softening temperature of the glass component exceeds the weight ratio 30 becomes sinterability is lowered high. If the alkaline earth metal oxide or ZnO is less than 20 weight ratio, the softening temperature of the glass component is increased and the sinterability is lowered. Conversely, if the weight ratio is more than 70, moisture resistance is lowered. Furthermore, although alkali metal oxides are effective for low-temperature sintering, when the weight ratio exceeds 15, the moisture resistance decreases. One or more of SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , EO and A ₂ O may be added in the form of an oxide.

The high frequency dielectric ceramic composition of the present invention contains 60 to 99% by weight of the ceramic component and 1 to 40% by weight of a glass component. If the addition amount of the glass component is less than 1% by weight, the low-temperature sintering effect is not exhibited. Conversely, if it exceeds 40% by weight, the relative permittivity ε _r and the Q value are decreased, and the temperature change rate τ _f of the resonance frequency is also reduced. growing.

The high frequency dielectric ceramic composition of the present invention preferably contains 0 to 15 parts by weight of TiO ₂ with respect to 100 parts by weight of the total of the ceramic component and the glass component. TiO ₂ is used as a glass crystallization accelerator and has an effect of improving the Q value. When the added amount of TiO ₂ exceeds 15 parts by weight, the sinterability deteriorates.

The high frequency dielectric ceramic composition of the present invention preferably contains 0 to 5 parts by weight of CuO with respect to 100 parts by weight in total of the ceramic component and the glass component. CuO is used as a sintering accelerator and has an effect of low-temperature sintering. When the added amount of CuO exceeds 5 parts by weight, the Q value decreases, and the temperature change rate τ _f of the resonance frequency increases.

  Thus, the high frequency dielectric ceramic composition of the present invention can be obtained by sintering the high frequency dielectric ceramic composition of the present invention at a low temperature of 1000 ° C. or lower. Moreover, the high frequency dielectric ceramic which comprises the electronic component of this invention can be obtained by baking the high frequency dielectric ceramic composition of this invention. The electronic component of the present invention is not particularly limited as long as it is an electronic component to which the high frequency dielectric ceramic obtained from the high frequency dielectric composition of the present invention can be applied. For example, an LC filter is preferable.

  The electronic component of the present invention includes the high frequency dielectric ceramic and a conductor disposed inside the high frequency dielectric ceramic. The high frequency dielectric ceramic can be obtained, for example, by sintering a laminated body in which a plurality of ceramic green sheets are laminated. The conductor can be obtained by sintering a conductive paste applied in a predetermined pattern on a predetermined ceramic green sheet simultaneously with the ceramic clean sheet. This conductor can be formed, for example, as a coil conductor or a capacitor internal electrode by a pattern of a conductive paste. As the conductive paste, a paste containing Ag or Cu as a main component is preferable. The conductive paste is not limited to Ag and Cu, and may be any conductive material that can be sintered at a low temperature of 1000 ° C. or lower.

  According to the invention described in claims 1 to 8 of the present invention, it can be sintered at a low temperature, can be co-fired with a low-resistance electrode material, and is excellent in dielectric constant, Q value and dielectric characteristics. In addition, a dielectric ceramic composition for high frequency and an electronic component using the same can be provided.

  In the following, first, a multilayer ceramic electronic component which is an embodiment of the electronic component of the present invention using the dielectric ceramic composition for high frequency of the present invention will be described with reference to FIGS. Specific examples of the high frequency dielectric ceramic composition will be described. 1 is a perspective view showing an appearance of an embodiment of the electronic component of the present invention, FIG. 2 is a circuit diagram of the electronic component shown in FIG. 1, and FIG. 3 is an exploded perspective view showing the electronic component shown in FIG. .

  The multilayer ceramic electronic component of this embodiment is an LC filter. For example, as shown in FIG. 1, the LC filter 10 of the present embodiment includes a high-frequency dielectric ceramic 11 and a conductor disposed inside the high-frequency dielectric ceramic 11. The high-frequency dielectric ceramic 11 is a ceramic sintered body obtained by firing the high-frequency dielectric ceramic composition of the present invention as described later, and the conductor is described later together with the high-frequency dielectric ceramic composition. These are the coil conductor and the internal electrode for the capacitor that are sintered and formed inside the ceramic sintered body. Therefore, hereinafter, the high frequency dielectric ceramic 11 will be described as the ceramic sintered body 11.

  As shown in FIG. 1, first external electrodes 12 </ b> A and 12 </ b> B and second external electrodes 13 </ b> A and 13 </ b> B are formed on the surface of the ceramic sintered body 11. The first external electrodes 12A and 12B are each connected to a coil conductor inside the ceramic sintered body 11, and the second external electrodes 13A and 13B are each connected to an internal electrode for a capacitor inside the ceramic sintered body 11. The LC filter 10 is configured as an LC resonance circuit shown in FIG.

  Next, a method for manufacturing the ceramic sintered body 11 will be described together with its internal structure with reference to FIG. In order to manufacture the ceramic sintered body 11, first, an organic vehicle is added to the high frequency dielectric ceramic composition of the present invention to prepare a ceramic slurry. Thereafter, a ceramic green sheet is formed from the ceramic slurry using a known method such as a doctor blade method. Thereafter, this ceramic green sheet is dried and punched out to a predetermined size as shown in FIG. 3 to produce rectangular ceramic green sheets 11A to 11M.

  Subsequently, through holes are formed as via holes in predetermined ceramic green sheets among the ceramic green sheets 11A to 11M as shown in FIG. Further, by conducting screen printing of a conductive paste in a predetermined pattern on a predetermined ceramic green sheet, the coil conductors 14A and 14B and the capacitor internal electrodes 15A and 15B are directed from the top to the bottom as shown in FIG. 15C and coil conductors 14C and 14D, respectively, and a through-hole formed in a predetermined ceramic green sheet is filled with a conductive paste for via-hole conductors. The ceramic green sheets 11A to 11M thus obtained are laminated as shown in FIG. 3 and pressed in the thickness direction to obtain a laminate. This laminated body is fired at a low temperature of 1000 ° C. or lower to obtain a ceramic sintered body 11. Thereafter, the first external electrodes 12A and 12B and the second external electrodes 13A and 13B are formed on the surface of the ceramic sintered body 11 as shown in FIG. Conventionally known methods for forming the first and second external electrodes 12A, 12B, 13A, and 13B include a thick film forming method in which a conductive paste is applied and baked, and a thin film forming method such as vapor deposition, plating, or sputtering. This method can be used.

As shown in FIG. 2, in the case of the LC filter 10 of the present embodiment, the coil conductor 14A in the ceramic sintered body 11, the inductance unit _{L 1} is formed by 14B, the inductance unit _{L 2} coil conductor 14C, the 14D In addition, the capacitor C is formed by the internal electrodes 15A, 15B, and 15C in the ceramic sintered body 11.

The LC filter 10 of the present embodiment can be fired at a low temperature of 1000 ° C. or lower because the ceramic sintered body 11 is formed of the high frequency dielectric ceramic composition of the present invention as described above. Can be co-sintered at the same time as the ceramic green sheet even if a conductive paste containing a low melting point metal such as Ag or Cu as a main component is used as the coil conductor and capacitor internal electrode, and an efficient LC filter 10 can be obtained. It is possible to obtain the LC filter 10 that is excellent in the relative permittivity, the Q value, and the temperature coefficient π _f of the resonance frequency and suitable for the high frequency region.

  As described above, by applying the high frequency dielectric ceramic composition of the present invention to the LC filter 10, the LC filter 10 having excellent high frequency characteristics can be obtained. The high-frequency dielectric ceramic composition of the present invention can be widely applied not only to LC filters but also to other electronic components.

  Next, the high-frequency dielectric ceramic composition of the present invention used when manufacturing electronic parts such as the dielectric resonator of the present invention will be described based on examples.

In this example, high frequency dielectric ceramic compositions of sample Nos. 0 to 81 shown in the following Tables 1 to 6 were prepared by the following procedure. Sample Nos. 0 to 21 are samples for observing the influence of the substitution rate (X, Y, V, and Me) of each element of the ceramic component, and Sample Nos. 22 to 70 show the influence of the content of each element of the glass component. Samples Nos. 71 to 74 are samples that observe the effect of the added amount of the glass component, and Samples Nos. 75 to 81 are samples that observe the effect of the additives (TiO ₂ , CuO). Next, high frequency dielectric ceramics were prepared using these samples, and the high frequency characteristics shown in Tables 1 to 4 of these high frequency dielectric ceramics were measured and evaluated. The results are shown in the respective tables. Tables 5 and 6 below show the compositions of the glass components. In Tables 1 to 6 below, samples marked with * are outside the scope of the present invention.

(1) Preparation of high-frequency dielectric ceramic composition First, as starting materials for ceramic components, barium carbonate (BaCO ₃ ), magnesium hydroxide (Mg (OH) ₂ ), nickel oxide (NiO), cobalt carbonate (CoCO ₃ ) Zinc oxide (ZnO), manganese carbonate (MnCO ₃ ), antimony oxide (Sb ₂ O ₃ ), and niobium oxide (Nb ₂ O ₅ ) were prepared. Next, a composition represented by Ba _1-X Sr _X [Me _1/3 (Sb _1-Y Nb _Y ) _2/3 ] _V O ₃ shown in Tables 1 to 4 below is obtained. Weighed and formulated as Thereafter, the prepared raw material powder was wet-mixed for 16 hours using a ball mill, dehydrated and dried, and then calcined at 1100 to 1300 ° C. for 3 hours. And this calcined powder was grind | pulverized to less than 1 micrometer with the ball mill, and the calcined powder of the composition shown in the following Table 1-Table 4 was obtained.

On the other hand, as starting materials for glass components, BaCO ₃ , strontium carbonate (SrCO ₃ ), calcium carbonate (CaCO ₃ ), magnesium carbonate (MgCO ₃ ), ZnO, aluminum oxide (Al ₂ O ₃ ), lithium carbonate (Li ₂ CO) ₃ ), sodium carbonate (Na ₂ CO ₃ ), potassium carbonate (K ₂ CO ₃ ), silicon dioxide (SiO ₂ ), and boron oxide (B ₂ O ₃ ) were prepared. Next, each of these raw material powders was prepared at a composition ratio as shown in Table 5 and Table 6 below, and these raw material powders were melted, quenched, and pulverized in a PtRh crucible at 1200 to 1600 ° C. G1-G50 glass powders shown in Table 6 were prepared.

(2) Production of dielectric ceramic for high frequency Next, glass powder was added to the calcined powder obtained in (1) at a weight percentage shown in the following Tables 1 to 4, and a binder was added to these mixtures. Thereafter, these mixtures were wet pulverized again with a ball mill for 16 hours to obtain adjusted powder. These adjusted powders were press-molded under a pressure of 2000 kgf / cm ^{2 so} that the size after firing was a disk having a diameter of 10 mm and a thickness of 5 mm. Subsequently, these molded articles were fired at the firing temperatures shown in Tables 1 to 2 for 2 hours to obtain sintered bodies (high frequency dielectric ceramics).

(3) Evaluation of high frequency dielectric porcelain A) Measurement of ε _r , τ _f and Q value of high frequency dielectric porcelain For samples No. 0 to No. 81, respectively, by a dielectric resonance method at room temperature (25 ° C.) The relative dielectric constant ε _r and the Q value were measured at 6 GHz, and the results are shown in Tables 1 to 4 below. For each sample, the same cylindrical sample as in the dielectric resonance method is prepared, and this sample is put in a cavity, and the resonance peak of the TE011 mode is set to a resonance frequency f at _{25 ° C.} and a resonance frequency at 25 ° _C. and 55 ° C. in a constant temperature bath. f _{55 degreeC} was measured, temperature change rate (tau) _f of the resonant frequency was calculated _| required based on the following formula, and the result was shown in the following Table 1-Table 4.
τ _f = (f _{55 ° C.−} f _{25 ° C.} ) / f _{25 ° C.}

B) Evaluation of Sinterability of High Frequency Dielectric Porcelain Sinterability was evaluated by an ink penetration test. The ink penetration test is a method in which a sample is immersed in the ink and evaluated based on the presence or absence of ink penetration into the ceramic of the sample. The evaluation results are shown in Tables 1 to 4 below. In these tables, o indicates a sample in which the ink did not penetrate into the ceramic, and x represents a sample in which the ink has penetrated into the ceramic.

C) Evaluation of moisture resistance of dielectric ceramic for high frequency A 30 μm sample was prepared, and a DC voltage of 10 V was applied to the sample in an atmosphere at a temperature of 85 ° C. and a relative humidity of 85%. The results are shown in Tables 1 to 4 below. In these tables, o indicates a sample having a log IR of 9 or more, and x indicates a sample having a log IR of less than 9.

(1) Influence of composition of ceramic component (Sample Nos. 0 to 21)
According to the results shown in Table 1, the range Y in the formula is a ceramic component _{(Ba 1-X} Sr X _{[Me 1/3 (Sb 1-Y Nb} Y) 2/3 ] _V O ₃ is the invention Samples No. 0 to No. 5 of the present invention within (0 ≦ Y ≦ 0.9) are sintered at a low temperature of 900 ° C., and thus co-sinter low-cost and inexpensive metals such as Ag and Cu. In addition, the relative dielectric constant ε _r is in the range of 10 to 20, the Q value is as high as 10,000 or more at 6 GHz, the temperature change rate τ _f of the resonance frequency is also small in the range of ± 20, and the high frequency characteristics As a result, it has been found that it can be miniaturized as a high-frequency resonator and the like, and has good sinterability and moisture resistance, and is excellent in environmental resistance, whereas Y is within the scope of the present invention. outside of the sample No.6 is the relative dielectric constant epsilon _r is greater than 20, the temperature change rate tau _f of resonance frequency is ± The range of 0 and it was found that more than.

According to the results shown in Table 1, the range V in the composition formula is a ceramic component _{(Ba 1-X} Sr X _{[Me 1/3 (Sb 1-Y Nb} Y) 2/3 ] _V O ₃ is the invention Sample Nos. 8 and 9 of the present invention within (0.9 ≦ V ≦ 1.1) can be sintered at a low temperature of 900 ° C., and the relative dielectric constant ε _r is in the range of 10 to 20. The Q value is 6 GHz and both are as high as 10,000 or more, the temperature change rate τ _f of the resonance frequency is small within a range of ± 20, and the sintering and moisture resistance are good and the environment is excellent. On the other hand, Samples Nos. 7 and 10 where Y is outside the range of the present invention were found to have a Q value lower than 10,000.

According to the results shown in Table 1 above, in the composition formula (Ba _1-X Sr _X [Me _1/3 (Sb _1-Y Nb _Y ) _2/3 ] _V O ₃ ) which is a ceramic component, Me and Mg as Ni Sample Nos. 11, 13, 15, and 17 of the present invention containing any one of Co, Zn, and Mn can be sintered at a low temperature of 900 ° C. and have a relative dielectric constant ε _r of 10 to 10. It is within the range of 20, the Q value is 6 GHz, both are as high as 10000 or more, the temperature change rate τ _f of the resonance frequency is also small within the range of ± 20, and it has good sinterability and moisture resistance and is excellent in environmental resistance. On the other hand, it was found that none of the sample Nos. 12, 14, 16, and 18 containing no Mg as Me was sintered.

According to the results shown in Table 1 above, _X in the composition formula (Ba _1-X Sr _X [Me _1/3 (Sb _1-Y Nb _Y ) _2/3 ] _V O ₃ ), which is a ceramic component, is within the scope of the present invention. Sample Nos. 19 and 20 of the present invention within (0 ≦ X ≦ 0.3) can be sintered at a low temperature of 900 ° C., and the relative dielectric constant ε _r is within the range of 10-20. Yes, the Q value is 6 GHz and both are as high as 10,000 or more, the temperature change rate τ _f of the resonance frequency is small within the range of ± 20, and it has been found that it has good sinterability and moisture resistance and is excellent in environmental resistance. On the other hand, it was found that Sample No. 21 in which X is outside the range of the present invention has a temperature change rate τ _f of the resonance frequency exceeding the range of ± 20.

(2) Effect of glass component composition (Sample Nos. 22 to 70)
According to the results shown in Table 2, Table 3, Table 5, and Table 6, Sample Nos. 22, 24, 25, Nos. 33 to 40, No. 43 in which each composition of the glass component satisfies the scope of the present invention. -45, No. 49-58, No. 64-68 can all be sintered at a low temperature of 900 ° C., and the relative dielectric constant ε _r is in the range of 10-20, and the Q value It was found that the frequency was 6 GHz and both were as high as 10,000 or more, the temperature change rate τ _f of the resonance frequency was small within the range of ± 20, and the sintering and moisture resistance were good and the environment was excellent.

On the other hand, according to the results shown in Tables 2 and 5 above, sample No. 23 containing a glass component whose SiO ₂ content is less than the range of the present invention (weight ratio 10 ≦ SiO ₂ ≦ 60) is It was found that the moisture resistance was poor and the environment was poor. Conversely, it was found that Sample No. 31 having a SiO ₂ content exceeding the range of the present invention was not sintered.

  Moreover, according to the result shown in the said Table 2, Table 3, and Table 5, sample No. 26-31 containing the glass component whose content of EO is less than the range (20 <= EO <= 70 by weight ratio) of this invention, No 42 was found to sinter. On the other hand, it was found that Sample Nos. 59 to 63 containing a glass component whose EO content exceeds the range of the present invention have poor moisture resistance and poor environmental resistance.

Further, according to the results shown in Table 2 and Table _5, the sample content of B 2 _{O 3} comprises a glass component is less than the scope of the present invention _{(5 ≦ B 2 O 3 ≦} 40 , by weight ratio) No.32 Was found not to sinter. Conversely, it was found that Sample No. 41 containing a glass component having a B ₂ O ₃ content exceeding the range of the present invention has poor moisture resistance and poor environmental resistance.

Further, according to the results shown in Table 3 and Table 5, the samples containing the glass component content of _{A 2} O is beyond the scope of the present invention (0 ≦ _{A 2} O ≦ 15 in a weight ratio) Nanba46～48 In both cases, the moisture resistance was poor and the environment was poor.

Further, according to the results shown in Table 3 and Table 5, sample No.70 comprising a glass component _Al 2 _{O 3} content is beyond the scope of the present invention _{(0 ≦ Al 2 O 3 ≦} 30 , by weight ratio) Was found not to sinter.

(3) Influence of added amount of ceramic component (Sample Nos. 71 to 74)
According to the results shown in Tables 3 and 4 above, sample Nos. 72 and 73 having a glass component content within the range of the present invention (1 to 40% by weight) can be sintered at a low temperature of 900 ° C. In addition, the relative dielectric constant ε _r is in the range of 10 to 20, the Q value is 6 GHz and is high at 10000 or more, the temperature change rate τ _f of the resonance frequency is also small in the range of ± 20, and It has been found that it has excellent caking and moisture resistance and is excellent in environmental resistance. On the other hand, it was found that Sample No. 71 having a glass component content less than the range of the present invention was not sintered even when the firing temperature was raised to 1000 ° C. In contrast, Sample No. 74 in which the glass component content exceeds the range of the present invention has a relative dielectric constant ε _r of less than 10, a Q value of less than 10,000, and a temperature change rate τ _{f of the} resonance frequency of ± 20. It was found that the range was exceeded.

(4) Influence of additives (TiO ₂ , CuO) (Sample Nos. 75 to 81)
According to the results shown in Table 4 above, sample Nos. 75 to 77 in which the addition amount of TiO ₂ with respect to a total of 100 parts by weight of the ceramic component and the glass component is within the range of the present invention (0 to 15 parts by weight) are 900 It can be sintered at a low temperature of ° C., the relative dielectric constant ε _r is in the range of 10 to 20, the Q value is as high as 10,000 or more at 6 GHz, and the temperature change rate τ _f of the resonance frequency is ± It was found to be small in the range of 20 and excellent in sinterability and moisture resistance and environmental resistance. On the other hand, it was found that Sample No. 78 in which the added amount of TiO ₂ was 20% by weight and exceeded the range of the present invention was not sintered.

According to the results shown in Table 4 above, sample Nos. 79 and 80 in which the amount of CuO added to the total of 100 parts by weight of the ceramic component and the glass component is within the range of the present invention (0 to 5 parts by weight) are 900 ° C. In addition, the relative dielectric constant ε _r is in the range of 10 to 20, the Q value is as high as 10,000 or more at 6 GHz, and the temperature change rate τ _f of the resonance frequency is ± 20. It was found that it was small within the range, and had good sinterability and moisture resistance and excellent environmental resistance. On the other hand, Sample No. 81 in which the amount of CuO added exceeds the range of the present invention was found to have a Q value lower than 10,000 and a temperature change rate τ _{f of the} resonance frequency exceeding ± 20.

As described above, according to this example, sintering can be performed at a low temperature of 900 ° C., the relative dielectric constant ε _r is in the range of 10 to 20, the Q value is 6 GHz, and all are 10,000 or more. The frequency change rate τ _f of the resonance frequency is as small as 20 ppm / ° C. or less in absolute value, and also has good sinterability, moisture resistance, and environmental resistance, and a high frequency dielectric ceramic composition and a high frequency dielectric I was able to obtain porcelain. Therefore, an electronic component having excellent high frequency characteristics as described above can be obtained by using the dielectric ceramic composition for high frequency of this example.

  It should be noted that the present invention is not limited to the above-described embodiments, and any high-frequency dielectric ceramic composition and electronic parts using the same are included in the present invention as long as the conditions of the present invention are satisfied. Is done.

  The present invention can be suitably used for a dielectric ceramic composition for high frequency used in a high frequency region such as a microwave or a millimeter wave and an electronic component using the same.

It is a perspective view which shows the external appearance of one Embodiment of the electronic component of this invention. FIG. 2 is a circuit diagram of the electronic component shown in FIG. 1. It is a disassembled perspective view which shows the electronic component shown in FIG.

Explanation of symbols

10 LC filter (electronic parts)
11 Ceramic sintered body (high frequency dielectric ceramic)
11A to 11M Ceramic Green Sheet 14A, 14B, 14C, 14D Coil conductor (conductor)
15A, 15B, 15C Capacitor internal electrode (conductor)

Claims (8)

The composition formula is Ba _1-X Sr _X [Me _1/3 (Sb _1-Y Nb _Y ) _2/3 ] _V O ₃ (where 0 ≦ X ≦ 0.3, 0 ≦ Y ≦ 0.9, 0. 9 ≦ V ≦ 1.1, Me includes 60 to 99% by weight of a ceramic component represented by Mg or a part of Mg substituted with at least one of Zn, Ni, Mn, and Co), and a glass component. 1 to 40% by weight of a dielectric ceramic composition for high frequency,
The glass components include SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , EO (where E is an alkaline earth metal of Mg, Ca, Sr, Ba and at least one metal of Zn) and A ₂ O (provided that , A is at least one alkali metal of Li, Na, and K), and the content of each of the oxides is by weight,
10 ≦ SiO ₂ ≦ 60,
5 ≦ B ₂ O ₃ ≦ 40,
0 ≦ Al ₂ O ₃ ≦ 30,
20 ≦ EO ≦ 70,
0 ≦ A ₂ O ≦ 15
A dielectric ceramic composition for high frequency, which satisfies the following relationship: 2. The dielectric ceramic composition for high frequency according to claim 1, comprising 0 to 15 parts by weight of TiO ₂ with respect to 100 parts by weight of the total of the ceramic component and the glass component.   2. The dielectric ceramic composition for high frequency according to claim 1, comprising 0 to 5 parts by weight of CuO with respect to a total of 100 parts by weight of the ceramic component and the glass component.   4. An electronic component having a high frequency dielectric ceramic and a conductor disposed inside the high frequency dielectric ceramic, wherein the high frequency dielectric ceramic is any one of claims 1 to 3. An electronic component formed of the dielectric ceramic composition for high frequency according to claim 1 and fired at 1000 ° C. or lower.   5. The electronic component according to claim 4, wherein the dielectric ceramic for high frequency is formed by firing a laminate formed by laminating a plurality of ceramic sheets.   The electronic component according to claim 5, wherein the conductor is obtained by firing a conductive paste applied in a predetermined pattern on the ceramic sheet.   The electronic component according to claim 4, wherein the conductor contains Ag or Cu as a main component.   The electronic component according to any one of claims 4 to 7, wherein the electronic component is a filter.

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