JP2005167226A - Emissive display device, its manufacturing method, and television receiver - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an emissive display device that can be manufactured by improving the utilization efficiency of materials and simplifying the manufacturing process, and to provide a method of manufacturing the device. <P>SOLUTION: The emissive display device comprises a gate electrode provided on a substrate having an insulating surface through a material having a photocatalystic function, a gate insulating layer provided on the gate electrode, and a semiconductor layer and a first electrode provided on the gate insulating layer. The device also comprises a wiring layer provided on the semiconductor layer, a partition wall covering the end of the first electrode and the wiring layer, and an electroluminescence layer on the first electrode. In addition, the device also comprises a second electrode on the electroluminescence layer. The wiring layer covers the end section of the first electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a light-emitting display device using a droplet discharge method and a manufacturing method thereof.

  A thin film transistor (hereinafter referred to as “TFT”) and an electronic circuit using the thin film transistor are manufactured by laminating various thin films such as a semiconductor, an insulator, and a conductor on a substrate and appropriately forming a predetermined pattern by a photolithography technique. Has been. Photolithographic technology is a technology that uses a light to transfer a circuit pattern or other pattern formed on a transparent flat plate called a photomask onto a target substrate. It is widely used in the manufacturing process.

  In the manufacturing process using the conventional photolithography technology, a multi-step process such as exposure, development, baking, and peeling is required only for handling a mask pattern formed using a photosensitive organic resin material called a photoresist. Become. Therefore, the manufacturing cost inevitably increases as the number of photolithography processes increases. In order to improve such problems, attempts have been made to manufacture TFTs by reducing the photolithography process (see, for example, Patent Document 1).

However, the technique described in Patent Document 1 is merely a replacement of a part of the photolithography process performed a plurality of times in the TFT manufacturing process by the printing method, and drastically contributes to the reduction in the number of processes. It is not possible. In addition, an exposure apparatus used for transferring a mask mask pattern in photolithography technology transfers a pattern of several microns to 1 micron or less by 1x projection exposure or reduced projection exposure. It is technically difficult to collectively expose a large area substrate having a thickness exceeding 1 meter.
Japanese Patent Laid-Open No. 11-251259

  The present invention simplifies the manufacturing process by reducing the number of photolithography processes in the manufacturing process of the TFT, the electronic circuit using the TFT, and the light emitting display device formed by the TFT, or eliminating the process itself. An object of the present invention is to provide a technology capable of manufacturing a substrate having a large area exceeding a meter at a low cost with a high yield.

  In order to solve the above-described problems of the prior art, the following measures are taken in the present invention.

  The present invention selectively selects at least one or more of patterns necessary for manufacturing a display panel, such as a conductive layer for forming a wiring layer or an electrode, or a mask layer for forming a predetermined pattern. A light-emitting display device is manufactured by forming a pattern by a method capable of forming a pattern. As a method capable of selectively forming a pattern, a conductive layer, an insulating layer, or the like can be formed, and a predetermined pattern can be formed by selectively discharging droplets of a composition prepared for a specific purpose. A droplet discharge method (also called an ink jet method depending on the method) is used. In addition, a method by which a pattern can be transferred or drawn, for example, a printing method (a method for forming a pattern such as screen printing or offset printing) can be used.

  In the present invention, a TFT is connected to a light-emitting element in which an organic substance expressing light emission called electroluminescence (hereinafter also referred to as “EL”) or a medium containing a mixture of an organic substance and an inorganic substance is interposed between electrodes. A light-emitting display device, which is manufactured using a droplet discharge method.

  In addition, according to the present invention, when a pattern is formed by a droplet discharge method, means for improving adhesion (base pretreatment) is performed on a region to be formed, thereby improving the reliability of the light-emitting display device.

  The present invention uses a photocatalytic activity of a substance having a photocatalytic function (hereinafter simply referred to as a photocatalytic substance) to form a substance that constitutes a light-emitting display device, such as wiring, other semiconductor films, insulating films, and masks. Features. In the process, when a droplet containing a predetermined composition is ejected from the pores to form a predetermined pattern, a substance having a photocatalytic function is formed as a base in order to improve the adhesion, and the photocatalytic activity is utilized. . Specifically, a wiring material mixed in a solvent (including a material in which a wiring material (conductive material) is dissolved or dispersed in a solvent) is formed on or at both ends of the photocatalytic substance by a coating method or the like. It is characterized by forming. For example, a conductor mixed in a solvent is discharged onto the photocatalyst material by a droplet discharge method. In addition to the droplet discharge method, spin-coating method, dipping method, other coating methods, and printing methods (methods for forming patterns such as screen printing and offset printing) can be used to apply a conductor mixed in a solvent onto a photocatalytic substance. It may be formed.

Photocatalytic materials include titanium oxide (TiO _x ), strontium titanate (SrTiO ₃ ), cadmium selenide (CdSe), potassium tantalate (KTaO ₃ ), cadmium sulfide (CdS), zirconium oxide (ZrO ₂ ), niobium oxide ( Nb ₂ O ₅ ), zinc oxide (ZnO), iron oxide (Fe ₂ O ₃ ), tungsten oxide (WO ₃ ) and the like are preferable. These photocatalytic substances may be irradiated with light in the ultraviolet region (wavelength 400 nm or less, preferably 380 nm or less) to cause photocatalytic activity.

  The photocatalytic substance is a sol-gel dip coating method, spin coating method, droplet discharge method, ion plating method, ion beam method, CVD method, sputtering method, RF magnetron sputtering method, plasma spraying method, plasma spraying method, or anode. It can be formed by an oxidation method. The substance may not have continuity as a film depending on the formation method. In the case of a photocatalytic substance made of an oxide semiconductor containing a plurality of metals, it can be formed by mixing and melting constituent element salts. When the photocatalytic substance is formed by a coating method such as a dip coating method or a spin coating method, it may be fired or dried when it is necessary to remove the solvent. Specifically, heating may be performed at a predetermined temperature (for example, 300 ° C. or higher), and preferably performed in an atmosphere containing oxygen. For example, when Ag is used as the conductive paste and baking is performed in an atmosphere containing oxygen and nitrogen, an organic substance such as a thermosetting resin is decomposed, so that Ag containing no organic substance can be obtained. As a result, the flatness of the Ag surface can be improved.

  By this heat treatment, the photocatalytic substance can have a predetermined crystal structure. For example, it has an anatase type and a rutile-anatase mixed type. In the low temperature phase, the anatase type is preferentially formed. Therefore, heating may be performed even when the photocatalytic substance does not have a predetermined crystal structure. Moreover, when forming by the apply | coating method, in order to obtain a predetermined film thickness, a photocatalyst substance can also be formed in multiple times.

For example, before TiO _x is irradiated with light, it is lipophilic but not hydrophilic, that is, it is in a water-repellent state. By performing light irradiation, photocatalytic activity occurs, and instead of hydrophilicity, there is no lipophilicity, that is, oil repellency. Depending on the light irradiation time, both hydrophilicity and lipophilicity can be achieved.

  In addition, hydrophilicity refers to the state which is easy to get wet with water, and a contact angle of 30 degrees or less, especially a contact angle of 5 degrees or less is called super hydrophilicity. On the other hand, water repellency refers to a state in which it is difficult to get wet with water, and refers to a contact angle of 90 degrees or more. Similarly, “lipophilic” refers to a state that is easily wetted with oil, and “oil repellency” refers to a state that is difficult to wet with oil. The contact angle refers to an angle formed by the tangent line between the formation surface and the droplet at the edge of the dropped dot.

  That is, the region irradiated with light (hereinafter referred to as an irradiation region) becomes a hydrophilic region or super hydrophilicity (hereinafter simply referred to as hydrophilicity). At this time, light irradiation is performed so that the width of the irradiation region becomes a desired wiring width. Thereafter, a dot in which a conductor is mixed in an aqueous solvent is discharged from the irradiation region toward the irradiation region by a droplet discharge method. Then, it is possible to form a wiring that is smaller than the diameter of the dots ejected simply by the droplet ejection method, that is, has a narrow width. This is because the irradiation region is formed so as to have a desired wiring width, so that it is possible to prevent the discharged dots from spreading on the formation surface. Furthermore, even when dots are ejected with a slight shift, wiring can be formed along the irradiation region, and accurate position control of wiring formation is possible.

  When an aqueous solvent is used, it is preferable to add a surfactant so that it can be smoothly discharged from an inkjet nozzle.

  Also, when a composition (conductor) mixed in an oil (alcohol) solvent is discharged, the composition (conductor) is discharged to a region where light irradiation is not performed (hereinafter referred to as a non-irradiated region). Then, by discharging dots from the non-irradiated region or toward the non-irradiated region, the wiring can be formed similarly. That is, the irradiation region may be formed by irradiating light to both ends of the region where the pattern (wiring) is to be formed, that is, surrounding the region where the wiring is to be formed. At this time, since the irradiated region has oil repellency, dots having a conductor mixed in an oil (alcohol) -based solvent are selectively formed in the non-irradiated region. That is, light irradiation may be performed so that the width of the non-irradiation region becomes a desired wiring width.

  As the oil (alcohol) -based solvent, a nonpolar solvent or a low polarity solvent can be used. For example, terpineol, mineral spirit, xylene, toluene, ethylbenzene, mesitylene, hexane, heptane, octane, decane, dodecane, cyclohexane, or cyclooctane can be used.

  Furthermore, the photocatalytic substance can be doped with transition metals (Pd, Pt, Cr, Ni, V, Mn, Fe, Ce, Mo, W, etc.) to improve the photocatalytic activity or visible light region (wavelength 400 nm to 800 nm). Photocatalytic activity can be caused by the light. This is because transition metals can form a new level in the forbidden band of an active photocatalyst having a wide band gap, and can extend the light absorption range to the visible light region. For example, an acceptor type such as Cr or Ni, a donor type such as V or Mn, an amphoteric type such as Fe, and Ce, Mo, W, or the like can be doped. Thus, since the wavelength of light can be determined by the photocatalytic substance, the light irradiation refers to irradiating light having a wavelength for activating the photocatalytic substance of the photocatalytic substance.

Further, when the photocatalytic substance is heated and reduced in vacuum or hydrogen reflux, oxygen defects are generated in the crystal. Thus, oxygen defects play the same role as electron donors even without doping with a transition element. In particular, in the case of forming by the sol-gel method, oxygen defects are present from the beginning, so that reduction is not necessary. Further, oxygen defects can be formed by doping a gas such as N ₂ .

  In addition to the photocatalytic substance, a conductive layer made of a refractory metal may be formed. The high melting point metal is Ti (titanium), W (tungsten), Cr (chromium), Al (aluminum), Ta (tantalum), Ni (nickel), Zr (zirconium), Hf (hafnium), V (vanadium). ), Ir (iridium), Nb (niobium), Pd (lead), Pt (platinum), Mo (molybdenum), Co (cobalt), or Rh (rhodium). The conductive layer is formed by a known method such as a sputtering method, a vapor deposition method, an ion implantation method, a CVD method, a dip method, or a spin coating method, and is preferably a sputtering method, a dip method, or a spin method. It is formed by a coating method. Further, when the conductive layer is insulated later, it is convenient and preferable that the conductive layer is formed with a thickness of 0.01 to 10 nm and insulated by natural oxidation.

As another method, there is a method of performing plasma treatment on a formation region (formation surface). The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas, and the pressure is several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr ( 106400 Pa), that is, a pulse voltage is applied in a state where the pressure becomes atmospheric pressure or a pressure near atmospheric pressure. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge. By using plasma treatment using a treatment gas of air, oxygen, or nitrogen, surface modification can be performed without material dependency. As a result, surface modification can be performed on any material.

  As another method, an organic material substance that functions as an adhesive may be formed in order to improve the adhesion of the pattern formed by the droplet discharge method to the formation region. Materials include photosensitive or non-photosensitive organic materials (organic resin materials) (polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, etc.), a low-k material having a low dielectric constant, or a plurality of materials. A film made of seeds or a stack of these films can be used. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. You may use the material which has. As a manufacturing method, a droplet discharge method or a printing method (a method of forming a pattern such as screen printing or offset printing) can be used. A TOF film or an SOG film obtained by a coating method can also be used.

  The above-described processes for improving the adhesion and surface modification of the conductor region formed by using the droplet discharge method are performed on the pattern formed by using the droplet discharge method. In addition, it may be performed when a conductor is further formed.

  In order to form a conductor (conductive layer), a composition in which a conductive material is dissolved or dispersed in a solvent is used as a composition discharged from a discharge port by a droplet discharge method. Conductive materials include metals such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, and Al, metal sulfides of Cd, Zn, Fe, Ti, Si, Ge, Si, Zr, Ba It corresponds to oxides such as silver halide fine particles or dispersible nanoparticles. Further, it corresponds to indium tin oxide (ITO) used as a transparent conductive film, ITSO composed of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, and the like. However, it is preferable to use a composition in which any of gold, silver and copper is dissolved or dispersed in a solvent in consideration of the specific resistance value, more preferably the composition discharged from the discharge port. It is preferable to use low resistance silver or copper. However, when silver or copper is used, a barrier film may be provided as a countermeasure against impurities. As the barrier film, a silicon nitride film or nickel boron (NiB) can be used.

  Alternatively, particles in which a conductive material is coated with another conductive material to form a plurality of layers may be used. For example, particles having a three-layer structure in which nickel boron (NiB) is coated around copper and silver is coated around it may be used. As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, organic solvents such as methyl ethyl ketone and acetone are used. The viscosity of the composition is preferably 50 mPa · s (cps) or less, in order to prevent the drying from occurring or to allow the composition to be smoothly discharged from the discharge port. The surface tension of the composition is preferably 40 mN / m or less. However, the viscosity and the like of the composition may be appropriately adjusted according to the solvent to be used and the application. As an example, the viscosity of a composition in which ITO, organic indium, or organic tin is dissolved or dispersed in a solvent is 5 to 50 mPa · s, the viscosity of a composition in which silver is dissolved or dispersed in a solvent is 5 to 20 mPa · s, The viscosity of the composition in which gold is dissolved or dispersed in a solvent is preferably set to 10 to 20 mPa · s.

  According to one embodiment of the light-emitting display device of the present invention, a gate electrode provided over a substrate having an insulating surface via a substance having a photocatalytic function, a gate insulating layer provided over the gate electrode, and a gate insulating layer A semiconductor layer and a first electrode, a wiring layer provided on the semiconductor layer, an end of the first electrode, a partition wall covering the wiring layer, an electroluminescent layer on the first electrode, and an electric field A second electrode is provided on the light emitting layer, and the wiring layer covers an end portion of the first electrode.

  According to one embodiment of the present invention, a light-emitting display device includes a wiring layer provided over a substrate having an insulating surface via a substance having a photocatalytic function, a first electrode, a semiconductor layer provided over the wiring layer, and a semiconductor A gate insulating layer provided on the layer; a gate electrode provided on the gate insulating layer; a partition covering the end portion of the first electrode and the wiring layer; an electroluminescent layer on the first electrode; A second electrode is provided on the electroluminescent layer, and the wiring layer covers an end portion of the first electrode.

  According to one embodiment of the light-emitting display device of the present invention, a gate electrode provided over a substrate having an insulating surface via a substance having a photocatalytic function, a gate insulating layer provided over the gate electrode, and a gate insulating layer A semiconductor layer and a first electrode, a wiring layer provided on the semiconductor layer, an end of the first electrode, a partition wall covering the wiring layer, an electroluminescent layer on the first electrode, and an electric field A second electrode is provided on the light emitting layer, and the first electrode covers an end portion of the wiring layer.

  According to one embodiment of the present invention, a light-emitting display device includes a wiring layer provided over a substrate having an insulating surface via a substance having a photocatalytic function, a first electrode, a semiconductor layer provided over the wiring layer, and a semiconductor A gate insulating layer provided on the layer; a gate electrode provided on the gate insulating layer; a partition covering the end portion of the first electrode and the wiring layer; an electroluminescent layer on the first electrode; A second electrode is provided on the electroluminescent layer, and the first electrode covers an end portion of the wiring layer.

  One embodiment of a light-emitting display device of the present invention includes a conductive layer containing a refractory metal over a substrate having an insulating surface, a gate electrode provided over the conductive layer, a gate insulating layer provided over the gate electrode, a gate A semiconductor layer and a first electrode provided over the insulating layer, a wiring layer provided over the semiconductor layer, an end of the first electrode, a partition covering the wiring layer, and an electric field over the first electrode A light emitting layer and a second electrode on the electroluminescent layer are provided, and the wiring layer covers an end portion of the first electrode.

  According to one embodiment of the light-emitting display device of the present invention, a conductive layer containing a refractory metal over a substrate having an insulating surface, a wiring layer provided over the conductive layer, a first electrode, and the wiring layer are provided. A semiconductor layer; a gate insulating layer provided on the semiconductor layer; a gate electrode provided on the gate insulating layer; an end portion of the first electrode; a partition covering the wiring layer; and a first electrode An electroluminescent layer and a second electrode on the electroluminescent layer are provided, and the wiring layer covers an end portion of the first electrode.

  One embodiment of a light-emitting display device of the present invention includes a conductive layer containing a refractory metal over a substrate having an insulating surface, a gate electrode provided over the conductive layer, a gate insulating layer provided over the gate electrode, a gate A semiconductor layer and a first electrode provided over the insulating layer, a wiring layer provided over the semiconductor layer, an end of the first electrode, a partition covering the wiring layer, and an electric field over the first electrode A light emitting layer and a second electrode on the electroluminescent layer are provided, and the first electrode covers an end portion of the wiring layer.

  According to one embodiment of the light-emitting display device of the present invention, a conductive layer containing a refractory metal over a substrate having an insulating surface, a wiring layer provided over the conductive layer, a first electrode, and the wiring layer are provided. A semiconductor layer; a gate insulating layer provided on the semiconductor layer; a gate electrode provided on the gate insulating layer; an end portion of the first electrode; a partition covering the wiring layer; and a first electrode The electroluminescent layer has a second electrode on the electroluminescent layer, and the first electrode covers an end of the wiring layer.

  In the above structure, the semiconductor layer may be a semi-amorphous semiconductor including hydrogen and a halogen element and including a crystal structure. In addition, a television receiver characterized in that a display screen is formed using the light-emitting display device having the above structure can be manufactured.

  According to one method for manufacturing a light-emitting display device of the present invention, a gate electrode is formed by a droplet discharge method over a substrate having an insulating surface with a photocatalytic function, and a gate insulating layer is formed over the gate electrode. A semiconductor layer is formed on the gate insulating layer, a first electrode is formed on the gate insulating layer by a droplet discharge method, and an end portion of the first electrode is covered on the semiconductor layer by a droplet discharge method. A wiring layer is formed, a partition is formed so as to cover the end portion of the first electrode and the wiring layer, an electroluminescent layer is formed on the first electrode, and a droplet discharge method is formed on the electroluminescent layer. Thus, the second electrode is formed.

  According to one method for manufacturing a light-emitting display device of the present invention, a first electrode is formed by a droplet discharge method on a substrate having an insulating surface through a substance having a photocatalytic function, and the photocatalyst is formed on the substrate having an insulating surface. A wiring layer is formed so as to cover an end portion of the first electrode by a droplet discharge method through a substance having a function, a semiconductor layer is formed over the wiring layer, and a gate insulating layer is formed over the semiconductor layer. A gate electrode is formed on the gate insulating layer by a droplet discharge method, a partition is formed so as to cover the end portion of the first electrode and the wiring layer, an electroluminescent layer is formed on the first electrode, A second electrode is formed on the electroluminescent layer by a droplet discharge method.

  According to one method for manufacturing a light-emitting display device of the present invention, a gate electrode is formed by a droplet discharge method over a substrate having an insulating surface with a photocatalytic function, and a gate insulating layer is formed over the gate electrode. First, a semiconductor layer is formed on the gate insulating layer, a wiring layer is formed on the semiconductor layer by a droplet discharge method, and the end of the wiring layer is covered on the gate insulating layer by a droplet discharge method. The electrode is formed, a partition is formed so as to cover the end portion of the first electrode and the wiring layer, an electroluminescent layer is formed on the first electrode, and the first layer is formed on the electroluminescent layer by a droplet discharge method. 2 electrodes are formed.

  According to one method for manufacturing a light-emitting display device of the present invention, a wiring layer is formed by a droplet discharge method on a substrate having an insulating surface through a substance having a photocatalytic function, and the photocatalytic function is provided on the substrate having an insulating surface. A first electrode is formed so as to cover an end portion of the wiring layer by a droplet discharge method through a substance having a substance, a semiconductor layer is formed over the wiring layer, a gate insulating layer is formed over the semiconductor layer, and the gate A gate electrode is formed on the insulating layer by a droplet discharge method, a partition is formed so as to cover the end portion of the first electrode and the wiring layer, an electroluminescent layer is formed on the first electrode, and electroluminescence is formed. A second electrode is formed on the layer by a droplet discharge method.

  According to one method for manufacturing a light-emitting display device of the present invention, a conductive layer containing a refractory metal is formed over a substrate having an insulating surface, a gate electrode is formed over the conductive layer by a droplet discharge method, and the gate electrode is formed over the gate electrode. A gate insulating layer is formed, a semiconductor layer is formed on the gate insulating layer, a first electrode is formed on the gate insulating layer by a droplet discharge method, and a first electrode is formed on the semiconductor layer by a droplet discharge method. A wiring layer is formed to cover the end of the electrode, a partition is formed to cover the end of the first electrode and the wiring layer, an electroluminescent layer is formed on the first electrode, and the electroluminescent layer is formed. A second electrode is formed thereon by a droplet discharge method.

  According to one method for manufacturing a light-emitting display device of the present invention, a conductive layer containing a refractory metal is formed over a substrate having an insulating surface, and a first electrode is formed over the conductive layer by a droplet discharge method. A wiring layer is formed so as to cover the end portion of the first electrode by a droplet discharge method, a semiconductor layer is formed on the wiring layer, a gate insulating layer is formed on the semiconductor layer, and the gate insulating layer is formed on the gate insulating layer. A gate electrode is formed by a droplet discharge method, a partition is formed so as to cover the end portion of the first electrode and the wiring layer, an electroluminescent layer is formed on the first electrode, and the electroluminescent layer is formed on the electroluminescent layer. A second electrode is formed by a droplet discharge method.

  According to one method for manufacturing a light-emitting display device of the present invention, a conductive layer containing a refractory metal is formed over a substrate having an insulating surface, a gate electrode is formed over the conductive layer by a droplet discharge method, and the gate electrode is formed over the gate electrode. A gate insulating layer is formed, a semiconductor layer is formed on the gate insulating layer, a wiring layer is formed on the semiconductor layer by a droplet discharge method, and an end portion of the wiring layer is formed on the gate insulating layer by a droplet discharge method A first electrode is formed so as to cover the end portion, a partition is formed so as to cover the end portion of the first electrode and the wiring layer, an electroluminescent layer is formed on the first electrode, and the electroluminescent layer is formed on the electroluminescent layer. A second electrode is formed by a droplet discharge method.

  According to one method for manufacturing a light-emitting display device of the present invention, a conductive layer containing a refractory metal is formed over a substrate having an insulating surface, a wiring layer is formed over the conductive layer by a droplet discharge method, and the conductive layer is formed over the conductive layer. The first electrode is formed so as to cover the end of the wiring layer by a droplet discharge method, the semiconductor layer is formed on the wiring layer, the gate insulating layer is formed on the semiconductor layer, and the liquid is formed on the gate insulating layer. A gate electrode is formed by a droplet discharge method, a partition is formed so as to cover the end portion of the first electrode and the wiring layer, an electroluminescent layer is formed on the first electrode, and a droplet is formed on the electroluminescent layer. A second electrode is formed by a discharge method.

  The gate insulating layer is formed by sequentially laminating the first silicon nitride film, the silicon oxide film, and the second silicon nitride film, so that the gate electrode can be prevented from being oxidized and formed on the upper layer side of the gate insulating layer. It is possible to form a favorable interface with the semiconductor layer.

  As described above, the present invention is characterized in that a gate electrode layer, a wiring layer, and a mask layer used for patterning are formed by a droplet discharge method, which is necessary for manufacturing a light-emitting display device. The object is achieved by manufacturing a light emitting display device by forming at least one or more of such patterns by a method capable of selectively forming a pattern.

  The partition wall may be formed of an organic material, an inorganic material, or a material in which a skeleton structure is formed by a bond of silicon and oxygen. Since the organic material has excellent flatness, the film thickness is not extremely reduced at the step portion or disconnection occurs even when the conductor is formed later. Organic materials have a low dielectric constant. Therefore, when used as an interlayer insulator for a plurality of wirings, the wiring capacity is reduced, multilayer wiring can be formed, and high performance and high functionality are realized.

  On the other hand, a typical example of a material in which a skeleton structure is formed by a bond of silicon and oxygen is a siloxane polymer. Specifically, a skeleton structure is formed by a bond of silicon and oxygen, and at least hydrogen is added to a substituent. Or a material having at least one of fluorine, an alkyl group, and an aromatic hydrocarbon as a substituent. This material is also excellent in flatness, has transparency and heat resistance, and can be subjected to heat treatment at a temperature of about 300 ° C. to 600 ° C. or less after forming an insulator made of a siloxane polymer.

  According to the present invention, a wiring layer and a mask layer can be directly patterned by a droplet discharge method. Therefore, a TFT with improved material utilization efficiency and a simplified manufacturing process is used. A highly reliable light-emitting display device can be obtained.

  Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the present invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
An embodiment of the present invention will be described with reference to FIGS. More specifically, a method for manufacturing a light-emitting display device to which the present invention is applied will be described. First, a method for manufacturing a light-emitting display device having a channel protective thin film transistor, in which the present invention is applied to manufacturing a gate electrode and a source / drain wiring, will be described with reference to FIGS.

  A base film 101 that improves adhesion is formed on the substrate 100 as a base pretreatment. As the substrate 100, a glass substrate made of barium borosilicate glass, alumino borosilicate glass, or the like, a quartz substrate, a silicon substrate, a metal substrate, a stainless steel substrate, or a plastic substrate having heat resistance that can withstand the processing temperature in this manufacturing process is used. Further, polishing may be performed by a CMP method or the like so that the surface of the substrate 100 is planarized. Note that an insulating layer may be formed over the substrate 100. The insulating layer is formed as a single layer or a stacked layer using an oxide material or a nitride material containing silicon by a known method such as a CVD method, a plasma CVD method, a sputtering method, or a spin coating method. This insulating layer may not be formed, but has an effect of blocking contaminants from the substrate 100. In the case of forming a base layer for preventing contamination from the glass substrate, the base film 101 is formed thereon as a base pretreatment for the conductive layers 102 and 103 formed by a droplet discharge method.

  One mode of a droplet discharge device used for forming a pattern is shown in FIG. The individual heads 1405 of the droplet discharge means 1403 are connected to the control means 1407, which can draw a pre-programmed pattern under the control of the computer 1410. The drawing timing may be performed with reference to a marker 1411 formed on the substrate 1400, for example. Alternatively, the reference point may be determined based on the edge of the substrate 1400. This is detected by an imaging means 1404 such as a CCD, and converted into a digital signal by the image processing means 1409 is recognized by the computer 1410 to generate a control signal and sent to the control means 1407. Of course, the information on the pattern to be formed on the substrate 1400 is stored in the storage medium 1408. Based on this information, a control signal is sent to the control means 1407, and each head 1405 of the droplet discharge means 1403 is sent. Can be controlled individually. The material to be discharged is supplied from the material supply source 1413 and the material supply source 1414 to the head 1405 and the head 1412 through piping.

    The inside of the head 1405 has a structure having a space filled with a liquid material as indicated by a dotted line 1406 and a nozzle that is a discharge port. Although not shown, the head 1412 has the same internal structure as the head 1405. With one head, conductive material, organic material, inorganic material, etc. can be discharged and drawn respectively. When drawing in a wide area like an interlayer film, the same material is simultaneously used from multiple nozzles to improve throughput. It can be discharged and drawn. In the case of using a large substrate, the head 1405 can freely scan on the substrate, freely set a drawing area, and can draw a plurality of the same pattern on one substrate.

  In this embodiment mode, a substance having a photocatalytic mechanism is used as the base film having a function of improving adhesion. The photocatalytic substance is a sol-gel dip coating method, spin coating method, droplet discharge method, ion plating method, ion beam method, CVD method, sputtering method, RF magnetron sputtering method, plasma spraying method, plasma spraying method, or anode. It can be formed by an oxidation method. The substance may not have continuity as a film depending on the formation method. In the case of a photocatalytic substance made of an oxide semiconductor containing a plurality of metals, it can be formed by mixing and melting constituent element salts. When the photocatalytic substance is formed by a coating method such as a dip coating method or a spin coating method, it may be fired or dried when it is necessary to remove the solvent. Specifically, heating may be performed at a predetermined temperature (for example, 300 ° C. or higher), and preferably performed in an atmosphere containing oxygen. For example, when Ag is used as the conductive paste and baking is performed in an atmosphere containing oxygen and nitrogen, an organic substance such as a thermosetting resin is decomposed, so that Ag containing no organic substance can be obtained. As a result, the flatness of the Ag surface can be improved.

  By this heat treatment, the photocatalytic substance can have a predetermined crystal structure. For example, it has an anatase type and a rutile-anatase mixed type. In the low temperature phase, the anatase type is preferentially formed. Therefore, heating may be performed even when the photocatalytic substance does not have a predetermined crystal structure. Moreover, when forming by the apply | coating method, in order to obtain a predetermined film thickness, a photocatalyst substance can also be formed in multiple times.

In this embodiment, a case where a TiO _x (typically TiO ₂ ) crystal having a predetermined crystal structure is formed as a photocatalytic substance by a sputtering method will be described. A metal titanium tube is used as a target, and sputtering is performed using argon gas and oxygen. Further, He gas may be introduced. In order to form TiO _x having high photocatalytic activity, the atmosphere is rich in oxygen and the formation pressure is increased. Further, it is preferable to form TiO _x while heating the substrate provided with the film forming chamber or the processed material.

The thus formed TiO _x has a photocatalytic function even if it is a very thin film.

  In addition, as other base pretreatments, metals such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), and Mo (molybdenum) are obtained by sputtering or vapor deposition. It is preferable to form the base film 101 formed of a material or an oxide thereof.

  The base film 101 may be formed with a thickness of 0.01 to 10 nm. However, since the base film 101 may be formed with a very small thickness, the base film 101 does not necessarily have a layer structure. When a refractory metal material is used as the base film, after forming the conductive layers 102 and 103 to be the gate electrode layers, the base film exposed on the surface is subjected to one of the following two processes. It is desirable to process.

  The first method is a step of insulating the base film 101 that does not overlap with the conductive layers 102 and 103 to form an insulating layer. That is, the base film 101 that does not overlap with the conductive layers 102 and 103 is oxidized and insulated. As described above, when the base film 101 is oxidized to be insulated, the base layer 01 is preferably formed with a thickness of 0.01 to 10 nm, and can be easily oxidized. . As a method of oxidizing, a method of exposing to an oxygen atmosphere or a method of performing heat treatment may be used.

  The second method is a step of removing the base film 101 by etching using the conductive layers 102 and 103 as a mask. When this process is used, the thickness of the base film 101 is not limited.

Further, as another method for the base pretreatment, there is a method for performing plasma treatment on a formation region (formation surface). The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas, and the pressure is several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr ( 106400 Pa), that is, a pulse voltage is applied in a state where the pressure becomes atmospheric pressure or a pressure near atmospheric pressure. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge. By using plasma treatment using a treatment gas of air, oxygen, or nitrogen, surface modification can be performed without material dependency. As a result, surface modification can be performed on any material.

  As another method, an organic material substance that functions as an adhesive may be formed in order to improve the adhesion of the pattern formed by the droplet discharge method to the formation region. Organic material (organic resin material) (polyimide, acrylic) or skeleton structure is composed of a bond of silicon (Si) and oxygen (O), a material containing at least hydrogen as a substituent, or fluorine, alkyl group as a substituent, Alternatively, a material having at least one of aromatic hydrocarbons may be used.

  Next, a composition containing a conductive material is discharged to form conductive layers 102 and 103 that function as gate electrodes later. The conductive layers 102 and 103 are formed using a droplet discharge means.

  The conductive layers 102 and 103 are formed using a droplet discharge means. The droplet discharge means is a general term for a device having means for discharging droplets such as a nozzle having a composition discharge port and a head having one or a plurality of nozzles. The diameter of the nozzle provided in the droplet discharge means is set to 0.02 to 100 μm (preferably 30 μm or less), and the discharge amount of the composition discharged from the nozzle is 0.001 pl to 100 pl (preferably 10 pl). Set to: The discharge amount increases in proportion to the size of the nozzle diameter. In addition, the distance between the object to be processed and the nozzle outlet is preferably as close as possible in order to drop it at a desired location, preferably about 0.1 to 3 mm (preferably about 1 mm or less). Set.

  A composition in which a conductive material is dissolved or dispersed in a solvent is used as the composition discharged from the discharge port. Conductive materials include metals such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, and Al, metal sulfides of Cd, Zn, Fe, Ti, Si, Ge, Si, Zr, Ba It corresponds to oxides such as silver halide fine particles or dispersible nanoparticles. Further, it corresponds to indium tin oxide (ITO) used as a transparent conductive film, ITSO composed of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, and the like. However, it is preferable to use a composition in which any of gold, silver and copper is dissolved or dispersed in a solvent in consideration of the specific resistance value, more preferably the composition discharged from the discharge port. It is preferable to use low resistance silver or copper. However, when silver or copper is used, a barrier film may be provided as a countermeasure against impurities. As the barrier film, a silicon nitride film or nickel boron (NiB) can be used.

  Alternatively, particles in which a conductive material is coated with another conductive material to form a plurality of layers may be used. For example, particles having a three-layer structure in which nickel boron (NiB) is coated around copper and silver is coated around it may be used. As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, organic solvents such as methyl ethyl ketone and acetone are used. The viscosity of the composition is preferably 50 mPa · S (cps) or less, in order to prevent drying from occurring or to allow the composition to be smoothly discharged from the discharge port. The surface tension of the composition is preferably 40 mN / m or less. However, the viscosity and the like of the composition may be appropriately adjusted according to the solvent to be used and the application. As an example, the viscosity of a composition in which ITO, organic indium, or organic tin is dissolved or dispersed in a solvent is 5 to 50 mPa · S, the viscosity of a composition in which silver is dissolved or dispersed in a solvent is 5 to 20 mPa · S, The viscosity of the composition in which gold is dissolved or dispersed in a solvent is preferably set to 10 to 20 mPa · S.

  The conductive layer may be a stack of a plurality of conductive materials. Alternatively, first, silver may be used as a conductive material, and a conductive layer may be formed by a droplet discharge method, followed by plating with copper or the like. Plating may be performed by electroplating or chemical (electroless) plating. For plating, the substrate surface may be immersed in a container filled with a solution having a plating material, but the substrate is placed at an angle (or vertically) so that the solution having the material to be plated flows on the substrate surface. It may be applied. When plating is performed so that the solution is applied while standing the substrate, there is an advantage that the process apparatus is downsized.

  Although depending on the diameter of each nozzle and the desired pattern shape, the diameter of the conductor particles is preferably as small as possible for preventing nozzle clogging and producing a high-definition pattern. 1 μm or less is preferable. The composition is formed by a known method such as an electrolytic method, an atomizing method, or a wet reduction method, and its particle size is generally about 0.01 to 10 μm. However, when formed in a gas evaporation method, the nanomolecules protected with the dispersant are as fine as about 7 nm. When the surface of each particle is covered with a coating agent, the nanoparticles are aggregated in the solvent. And stably disperse at room temperature and shows almost the same behavior as liquid. Therefore, it is preferable to use a coating agent.

  When the step of discharging the composition is performed under reduced pressure, the solvent of the composition is volatilized between the time of discharging the composition and landing on the object to be processed, and the subsequent drying and baking steps are omitted. be able to. Further, it is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor. In addition, after discharging the composition, one or both steps of drying and baking are performed. The drying and baking steps are both heat treatment steps. For example, drying is performed at 100 degrees for 3 minutes, and baking is performed at 200 to 350 degrees for 15 minutes to 30 minutes. Time is different. The drying process and the firing process are performed under normal pressure or reduced pressure by laser light irradiation, rapid thermal annealing, a heating furnace, or the like. In addition, the timing which performs this heat processing is not specifically limited. In order to satisfactorily perform the drying and firing steps, the substrate may be heated, and the temperature at that time depends on the material of the substrate or the like, but is generally 100 to 800 degrees (preferably 200). ~ 350 degrees). By this step, the solvent in the composition is volatilized or the dispersant is chemically removed, and the surrounding resin is cured and contracted to bring the nanoparticles into contact with each other, thereby accelerating fusion and fusion.

For the laser light irradiation, a continuous wave or pulsed gas laser or solid-state laser may be used. Examples of the former gas laser include an excimer laser and a YAG laser, and examples of the latter solid-state laser include a laser using a crystal such as YAG or YVO ₄ doped with Cr, Nd, or the like. Note that it is preferable to use a continuous wave laser because of the absorption rate of the laser light. In addition, a so-called hybrid laser irradiation method combining pulse oscillation and continuous oscillation may be used. However, depending on the heat resistance of the substrate 100, the heat treatment by laser light irradiation may be performed instantaneously within a few microseconds to several tens of seconds so that the substrate 100 is not destroyed. Instantaneous thermal annealing (RTA) uses an infrared lamp or a halogen lamp that irradiates ultraviolet light or infrared light in an inert gas atmosphere, and rapidly raises the temperature for several minutes to several microseconds. This is done by applying heat instantaneously. Since this treatment is performed instantaneously, only the outermost thin film can be heated substantially without affecting the lower layer film. That is, it does not affect a substrate having low heat resistance such as a plastic substrate.

  Further, as the base pretreatment of the conductive layer formed using the droplet discharge method, the above-described step of forming the base film 101 is performed, but this treatment step may be performed after the conductive layer is formed.

  Next, a gate insulating film is formed over the conductive layers 102 and 103 (see FIG. 1A). The gate insulating film may be formed of a known material such as a silicon oxide material or a nitride material, and may be a stacked layer or a single layer. For example, a stack of three layers of a silicon nitride film, a silicon oxide film, and a silicon nitride film may be used, or a stack of a single layer or two layers of a silicon oxynitride film may be used. In this embodiment, a silicon nitride film is used for the insulating layer 104 and a silicon nitride oxide film is used for the gate insulating layer 105. A silicon nitride film having a dense film quality is preferably used. In addition, when silver or copper is used for a conductive layer formed by a droplet discharge method, if a silicon nitride film or a NiB film is formed thereon as a barrier film, diffusion of impurities can be prevented and the surface can be planarized. is there. Note that in order to form a dense insulating film with low gate leakage current at a low deposition temperature, a rare gas element such as argon is preferably contained in the reaction gas and mixed into the formed insulating film.

Next, a conductive layer (also referred to as a first electrode) 106 is formed by selectively discharging a composition containing a conductive material over the gate insulating film (see FIG. 1B). The conductive layer 106 is formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxidized when light is emitted from the substrate 100 side or when a transmissive EL display panel is manufactured. A predetermined pattern may be formed by a composition containing zinc (ZnO), tin oxide (SnO ₂ ), and the like, and may be formed by firing.

  Further, it is preferably formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), or the like by a sputtering method. More preferably, indium tin oxide containing silicon oxide is used by a sputtering method using a target containing 2 to 10% by weight of silicon oxide in ITO. In addition, an oxide conductive material containing silicon oxide and in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide may be used. After the conductive layer (first electrode) 106 is formed by a sputtering method, a mask layer may be formed by a droplet discharge method and formed into a desired pattern by etching. In this embodiment mode, the conductive layer 106 is formed using a light-transmitting conductive material by a droplet discharge method. Specifically, ITSO including indium tin oxide, ITO, and silicon oxide is formed. Use to form. Although not shown, a photocatalytic substance may be formed in the same manner as when the conductive layers 102 and 103 are formed in a region where the conductive layer 106 is formed. The photocatalytic substance improves adhesion, and the conductive layer 106 can be formed by thinning into a desired pattern. The conductive layer 106 serves as a first electrode that functions as a pixel electrode.

  In this embodiment mode, the example in which the gate insulating layer has three layers of silicon nitride film / silicon oxynitride film (silicon oxide film) / silicon nitride film made of silicon nitride has been described above. As a preferable structure, the conductive layer (first electrode) 106 formed of indium tin oxide containing silicon oxide is formed in close contact with the insulating layer made of silicon nitride included in the gate insulating layer 105, whereby electroluminescence is produced. The effect that the rate at which the light emitted from the layer is emitted to the outside can be increased can be exhibited.

  Further, in the case of a structure in which emitted light is emitted to the side opposite to the substrate 100 side, Ag (silver), Au (gold), Cu (copper) is used when a reflective EL display panel is manufactured. ), W (tungsten), Al (aluminum), or other metal particles as the main component. As another method, a transparent conductive film or a light reflective conductive film is formed by a sputtering method, a mask pattern is formed by a droplet discharge method, and the first electrode layer is formed by combining etching processes. good.

  The conductive layer (first electrode) 106 may be wiped with a CMP method or a polyvinyl alcohol-based porous material and polished so that the surface thereof is planarized. In addition, after polishing using the CMP method, the surface of the conductive layer (first electrode) 106 may be subjected to ultraviolet irradiation, oxygen plasma treatment, or the like.

  The semiconductor layer may be formed by a known means (such as sputtering, LPCVD, or plasma CVD). There is no limitation on the material of the semiconductor layer, but it is preferably formed of silicon or a silicon germanium (SiGe) alloy.

  The semiconductor layer uses an amorphous semiconductor (typically hydrogenated amorphous silicon) or a crystalline semiconductor (typically polysilicon) as a material. For polysilicon, so-called high-temperature polysilicon using polycrystalline silicon formed at a process temperature of 800 ° C. or higher as a main material, or polycrystalline silicon formed at a process temperature of 600 ° C. or lower as a main material is used. It includes so-called low-temperature polysilicon and crystalline silicon that is crystallized by adding an element that promotes crystallization.

As another substance, a semi-amorphous semiconductor or a semiconductor including a crystal phase in part of a semiconductor layer can be used. A semi-amorphous semiconductor is a semiconductor having an intermediate structure between amorphous and crystalline (including single crystal and polycrystal), and has a third state that is stable in terms of free energy, and has a short distance. It is crystalline with order and lattice distortion. Typically, it is a semiconductor layer containing silicon as a main component and having a Raman spectrum shifted to a lower wave number side than 520 cm ⁻¹ with lattice distortion. Further, hydrogen or halogen is contained at least 1 atomic% or more as a neutralizing agent for dangling bonds. Here, such a semiconductor is referred to as a semi-amorphous semiconductor (hereinafter referred to as “SAS”). This SAS is also called a so-called microcrystalline semiconductor (typically microcrystalline silicon).

This SAS can be obtained by glow discharge decomposition (plasma CVD) of a silicide gas. A typical silicide gas is SiH ₄ , and in addition, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like can be used. Further, GeF ₄ and F ₂ may be mixed. The formation of the SAS can be facilitated by diluting the silicide gas with hydrogen or one or plural kinds of rare gas elements selected from hydrogen and helium, argon, krypton, and neon. It is preferable that the dilution ratio of hydrogen with respect to the silicide gas is, for example, 2 to 1000 times in flow rate ratio. Of course, formation of the SAS by glow discharge decomposition is preferably performed under reduced pressure, but it can also be formed by utilizing discharge at atmospheric pressure. Typically, it may be performed in a pressure range of 0.1 Pa to 133 Pa. The power supply frequency for forming the glow discharge is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. What is necessary is just to set high frequency electric power suitably. The substrate heating temperature is preferably 300 ° C. or lower, and can be formed even at a substrate heating temperature of 100 to 200 ° C. Here, as an impurity element mainly taken in at the time of film formation, it is desirable that impurities derived from atmospheric components such as oxygen, nitrogen, and carbon be 1 × 10 ²⁰ cm ⁻³ or less, and in particular, the oxygen concentration is 5 × 10 5. It is preferable to be ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ⁻³ or less. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a favorable SAS can be obtained. In addition, a SAS layer formed of a hydrogen-based gas may be stacked on a SAS layer formed of a fluorine-based gas as a semiconductor layer.

In the case where a crystalline semiconductor layer is used for the semiconductor layer, a method for manufacturing the crystalline semiconductor layer is a known method (laser crystallization method, thermal crystallization method, or heat using an element that promotes crystallization such as nickel. A crystallization method or the like may be used. In the case where an element for promoting crystallization is not introduced, the amorphous silicon film is heated at 500 ° C. for 1 hour in a nitrogen atmosphere before irradiating the amorphous silicon film with laser light, whereby the concentration of hydrogen contained in the amorphous silicon film is set to 1 ×. Release to 10 ²⁰ atoms / cm ³ or less. This is because the film is destroyed when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light.

  The method of introducing the metal element into the amorphous semiconductor layer is not particularly limited as long as the metal element can be present on the surface of the amorphous semiconductor layer or inside the amorphous semiconductor layer. For example, sputtering, CVD, A plasma treatment method (including a plasma CVD method), an adsorption method, or a method of applying a metal salt solution can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the amorphous semiconductor layer and to spread the aqueous solution over the entire surface of the amorphous semiconductor layer, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide.

  The crystallization of the amorphous semiconductor layer may be a combination of heat treatment and crystallization by laser light irradiation, or the heat treatment and laser light irradiation may be performed a plurality of times.

  An organic semiconductor using an organic material may be used as the semiconductor. As the organic semiconductor, a low molecular material, a polymer material, or the like is used, and materials such as an organic dye or a conductive polymer material can also be used.

  In this embodiment mode, an amorphous semiconductor is used as the semiconductor. In order to form the semiconductor layer 107, which is an amorphous semiconductor layer, and to form the channel protective films 109 and 110, for example, an insulating film is formed by a plasma CVD method and is patterned in a desired region to have a desired shape. To do. At this time, the channel protective films 109 and 110 can be formed by exposing from the back surface of the substrate using the gate electrode as a mask. For the channel protective film, polyimide or polyvinyl alcohol may be dropped using a droplet discharge method. As a result, the exposure process can be omitted. Thereafter, an N-type semiconductor layer 108 is formed using a semiconductor layer having one conductivity type, for example, an N-type amorphous semiconductor layer, by a plasma CVD method or the like. (See FIG. 1C). A semiconductor layer having one conductivity type may be formed as necessary.

  Channel protective films include inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), photosensitive or non-photosensitive organic materials (organic resin materials) (polyimide, acrylic, polyamide, polyimide amide, resist , Benzocyclobutene, etc.), a low-k material having a low dielectric constant, or a film made of a plurality of kinds, or a stack of these films. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. You may use the material which has. As a manufacturing method, a vapor deposition method such as a plasma CVD method or a thermal CVD method, or a sputtering method can be used. Alternatively, a droplet discharge method or a printing method (a method for forming a pattern such as screen printing or offset printing) can be used. A TOF film or an SOG film obtained by a coating method can also be used.

  Subsequently, mask layers 111 and 112 made of an insulator such as resist or polyimide are formed, and the semiconductor layer 107 and the N-type semiconductor layer 108 are patterned simultaneously using the mask layers 111 and 112.

Next, mask layers 113 and 114 made of an insulator such as resist or polyimide are formed by a droplet discharge method (see FIG. 1D). Through holes 118 are formed in part of the gate insulating layers 105 and 104 by etching using the mask layers 113 and 114, and the conductive layer 103 functioning as a gate electrode layer disposed on the lower layer side is formed. Expose the part. The etching process may be either plasma etching (dry etching) or wet etching, but plasma etching is suitable for processing a large area substrate. As an etching gas, a fluorine-based or chlorine-based gas such as CF ₄ , NF ₃ , Cl ₂ , or BCl ₃ may be used, and an inert gas such as He or Ar may be appropriately added. Further, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

  After the mask layers 113 and 114 are removed, a composition containing a conductive material is discharged to form conductive layers 115, 116, and 117, and the N-type semiconductor layer is formed using the conductive layers 115, 116, and 117 as a mask. Pattern processing is performed to form an N-type semiconductor layer (see FIG. 2E). The conductive layers 115, 116, and 117 function as wiring layers. Note that although not illustrated, before the conductive layers 115, 116, and 117 are formed, a photocatalytic substance or the like is selectively formed on a portion where the conductive layers 115, 116, and 117 are in contact with the gate insulating layer 105. Processing steps may be performed. Then, the conductive layer can be formed with good adhesion.

  In addition, as the base pretreatment of the conductive layer formed using a droplet discharge method, the above-described step of forming the base film may be performed, and this treatment step may be performed after the conductive layer is formed. This step improves the adhesion between the layers, so that the reliability of the light-emitting display device can also be improved.

  The conductive layer 117 functions as a source / drain wiring layer and is formed so as to be electrically connected to the previously formed first electrode. In addition, in the through hole 118 formed in the gate insulating layer 105, the conductive layer 116 which is a source and drain wiring layer and the conductive layer 103 which is a gate electrode layer are electrically connected. As a conductive material for forming the wiring layer, a composition containing metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum) as a main component is used. be able to. Further, light-transmitting indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like may be combined.

  In the step of forming the through hole 118 in a part of the gate insulating layers 105 and 104, the through hole 118 may be formed using the conductive layers 115, 116, and 117 as a mask after the conductive layers 115, 116, and 117 are formed. Good. Then, a conductive layer is formed in the through hole 118, and the conductive layer 116 and the conductive layer 103 which is a gate electrode layer are electrically connected. In this case, there is an advantage that the process is simplified.

  Subsequently, an insulating layer (also referred to as an insulating layer) 120 serving as a bank (also referred to as a partition wall) is formed. Although not illustrated, a protective layer of silicon nitride or silicon nitride oxide may be formed on the entire surface so as to cover the thin film transistor under the insulating layer 120. As for the insulating layer 120, an insulating layer is formed on the entire surface by a spin coating method or a dip method, and then an opening is formed by etching, as illustrated in FIG. Further, if the insulating layer 120 is formed by a droplet discharge method, etching is not necessarily required. When forming a wide area such as the insulating layer 120 by using a droplet discharge method, if a composition is discharged from a plurality of nozzle discharge ports of a droplet discharge device and a plurality of lines are drawn and formed, throughput is improved. improves.

  The insulating layer 120 is formed with an opening of a through hole in accordance with a position where a pixel is formed corresponding to the conductive layer 106 which is the first electrode. This insulating layer 120 is made of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride or other inorganic insulating materials, or acrylic acid, methacrylic acid and derivatives thereof, polyimide, aromatic Inorganic siloxanes containing Si—O—Si bonds among silicon, oxygen, and hydrogen compounds formed from heat-resistant polymers such as aromatic polyamides, polybenzimidazole, or siloxane-based materials as starting materials The hydrogen can be formed of an organic siloxane insulating material substituted with an organic group such as methyl or phenyl. When a photosensitive or non-photosensitive material such as acrylic or polyimide is used, the side surface has a shape in which the curvature radius changes continuously, and the upper thin film is formed without being cut off.

  Through the above steps, a TFT substrate for an EL display panel in which a bottom gate type (also referred to as an inverted stagger type) channel protective TFT and a first electrode (first electrode layer) are connected to the substrate 100 is completed. .

  Before the electroluminescent layer 121 is formed, heat treatment is performed at 200 ° C. under atmospheric pressure to remove moisture adsorbed in the insulating layer 120 or on the surface thereof. Further, it is preferable to perform heat treatment at 200 to 400 ° C., preferably 250 to 350 ° C. under reduced pressure, and to form the electroluminescent layer 121 by a vacuum deposition method or a droplet discharge method under reduced pressure without being exposed to the air as it is. .

  As the electroluminescent layer 121, materials that emit red (R), green (G), and blue (B) light are selectively formed by an evaporation method using an evaporation mask or the like. A material that emits red (R), green (G), and blue (B) light can be formed by a droplet discharge method (such as a low-molecular or high-molecular material) in the same manner as a color filter. In this case, a mask is not used. Both are preferable because RGB can be separately applied. A conductive layer 122 which is a second electrode is stacked over the electroluminescent layer 121, whereby a light-emitting display device having a display function using a light-emitting element is completed (see FIG. 2F).

Although not shown, it is effective to provide a passivation film so as to cover the second electrode. As the passivation film, silicon nitride (SiN), silicon oxide (SiO ₂ ), silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), nitrogen content is oxygen It is made of an insulating film containing aluminum nitride oxide (AlNO) or aluminum oxide, diamond-like carbon (DLC), or nitrogen-containing carbon film (CN _x ) that is higher than the content, and a single layer or a combination of the insulating films is used. Can do. For example, a laminate such as a nitrogen-containing carbon film (CN _x ) \ silicon nitride (SiN), an organic material can be used, and a polymer laminate such as a styrene polymer may be used. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. You may use the material which has.

At this time, it is preferable to use a film with good coverage as the passivation film, and it is effective to use a carbon film, particularly a DLC film. Since the DLC film can be formed in the temperature range from room temperature to 100 ° C., it can be easily formed over the electroluminescent layer having low heat resistance. The DLC film is formed by a plasma CVD method (typically, an RF plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, a hot filament CVD method, etc.), a combustion flame method, a sputtering method, or an ion beam evaporation method. It can be formed by laser vapor deposition. The reaction gas used for film formation was hydrogen gas and a hydrocarbon-based gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.), ionized by glow discharge, and negative self-bias was applied. Films are formed by accelerated collision of ions with the cathode. The CN film may be formed using C ₂ H ₄ gas and N ₂ gas as the reaction gas. The DLC film has a high blocking effect against oxygen and can suppress oxidation of the electroluminescent layer. Therefore, the problem that the electroluminescent layer is oxidized during the subsequent sealing process can be prevented.

  FIG. 16A is a top view of a pixel portion of the light-emitting display device of this embodiment mode, and FIG. Reference numeral 1601 denotes a TFT, 1603 denotes a light emitting element, 1604 denotes a capacitor, 1605 denotes a source line, 1606 denotes a gate line, and 1607 denotes a power supply line. The TFT 1601 is a transistor (hereinafter also referred to as “switching transistor” or “switching TFT”) that controls the connection state with the signal line, and the TFT 1602 is a transistor that controls the current flowing to the light emitting element (hereinafter “drive transistor”). Or “driving TFT”), and the driving TFT is connected in series with the light emitting element. A capacitor 1604 holds a voltage between the source and gate of the TFT 1602 which is a driving TFT.

  FIG. 13 shows a detailed view of the light-emitting display device of this example. A substrate 100 having a switching TFT 1601 and a TFT 1602 which is a driving TFT connected to the light emitting element 1603 is fixed to the sealing substrate 150 with a sealant 151. Various signals supplied to each circuit formed on the substrate 100 are supplied at a terminal portion.

  A gate wiring layer 160 is formed in the terminal portion in the same process as the conductive layers 102 and 103. Needless to say, the photocatalytic substance is formed in the formation region of the gate wiring layer 160 as well as the conductive layers 102 and 103, and the adhesion with the underlying formation region of the gate wiring layer 160 when formed by the droplet discharge method. Can be improved. The etching for exposing the gate wiring layer 160 can be performed simultaneously with the formation of the through hole 118 in the gate insulating layer 105. A flexible wiring substrate (FPC) 162 can be connected to the gate wiring layer 160 by an anisotropic conductive layer 161.

  Note that in the above light-emitting display device, the light-emitting element 1603 is sealed with a glass substrate. The sealing process is a process for protecting the light-emitting element from moisture, and is mechanically sealed with a cover material. Or a method of encapsulating with a thermosetting resin or an ultraviolet light curable resin, or a method of encapsulating with a thin film having a high barrier ability such as a metal oxide or nitride. As the cover material, glass, ceramics, plastic, or metal can be used. However, when light is emitted to the cover material side, it must be translucent. In addition, the cover material and the substrate on which the light emitting element is formed are bonded together using a sealing material such as a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a sealed space. Form. It is also effective to provide a hygroscopic material typified by barium oxide in this sealed space. This hygroscopic material may be provided in contact with the sealing material, or may be provided on the partition wall or in the peripheral portion so as not to block light from the light emitting element. Further, the space between the cover material and the substrate on which the light emitting element is formed can be filled with a thermosetting resin or an ultraviolet light curable resin. In this case, it is effective to add a moisture absorbing material typified by barium oxide in the thermosetting resin or the ultraviolet light curable resin.

  As described above, in this embodiment mode, the process can be omitted by not using a light exposure process using a photomask. In addition, by forming various patterns directly on the substrate using a droplet discharge method, an EL display panel can be easily manufactured even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. be able to.

  In addition, a highly reliable light-emitting display device with improved adhesion and peel resistance can be manufactured.

(Embodiment 2)
Embodiments of the present invention will be described with reference to FIGS. In this embodiment mode, a channel etch type thin film transistor is used as the thin film transistor in Embodiment Mode 1. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

  A base film 501 having a function of improving adhesion is formed over the substrate 500 (see FIG. 5A). Note that an insulating layer may be formed over the substrate 500. This insulating layer is used as a base film and may not be formed, but has an effect of blocking contaminants from the substrate 500. In the case of forming a base layer for preventing contamination from the glass substrate, a base film 501 is formed as a base film in a formation region of conductive layers 502 and 503 formed thereon by a droplet discharge method.

  In this embodiment mode, a substance having a photocatalytic mechanism is used as the base film having a function of improving adhesion.

In the present embodiment, a case where a TiO _x crystal having a predetermined crystal structure is formed as a photocatalytic substance by a sputtering method will be described. A metal titanium tube is used as a target, and sputtering is performed using argon gas and oxygen. Further, He gas may be introduced. In order to form TiO _x having high photocatalytic activity, the atmosphere is rich in oxygen and the formation pressure is increased. Further, it is preferable to form TiO _x while heating the substrate provided with the film forming chamber or the processed material.

The thus formed TiO _x has a photocatalytic function even if it is a very thin film.

  In addition, as other base pretreatments, metals such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), and Mo (molybdenum) are obtained by sputtering or vapor deposition. It is preferable to form the base film 501 formed of a material or an oxide thereof. The base film 101 may be formed with a thickness of 0.01 to 10 nm. However, since the base film 101 may be formed with a very small thickness, the base film 101 does not necessarily have a layer structure. When a refractory metal material is used as the base film, after forming the conductive layers 502 and 503 to be the gate electrode layers, the base film exposed on the surface is subjected to either of the following two processes. It is desirable to process.

  The first method is a step of insulating the base film 501 that does not overlap with the conductive layers 502 and 503 to form an insulating layer. That is, the base film 501 that does not overlap with the conductive layers 502 and 503 is oxidized and insulated. As described above, when the base film 501 is oxidized to be insulated, it is preferable to form the base layer 01 with a thickness of 0.01 to 10 nm, so that it can be easily oxidized. . As a method of oxidizing, a method of exposing to an oxygen atmosphere or a method of performing heat treatment may be used.

  The second method is a step of removing the base film 501 by etching using the conductive layers 502 and 503 as a mask. When this step is used, there is no restriction on the thickness of the base film 501.

Further, as another method for the base pretreatment, there is a method for performing plasma treatment on a formation region (formation surface). The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas, and the pressure is several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr ( 106400 Pa), that is, a pulse voltage is applied in a state where the pressure becomes atmospheric pressure or a pressure near atmospheric pressure. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge. By using plasma treatment using a treatment gas of air, oxygen, or nitrogen, surface modification can be performed without material dependency. As a result, surface modification can be performed on any material.

  As another method, an organic material substance that functions as an adhesive may be formed in order to improve the adhesion of the pattern formed by the droplet discharge method to the formation region. Organic material (organic resin material) (polyimide, acrylic) or skeleton structure is composed of a bond of silicon (Si) and oxygen (O), a material containing at least hydrogen as a substituent, or fluorine, alkyl group as a substituent, Alternatively, a material having at least one of aromatic hydrocarbons may be used.

  Next, a composition containing a conductive material is discharged to form conductive layers 502 and 503 that function as gate electrodes later. The conductive layers 502 and 503 are formed using a droplet discharge unit. In this embodiment mode, silver is used as the conductive material, but a laminate of silver and copper may be used. Moreover, a copper single layer may be sufficient.

  Further, as the base pretreatment of the conductive layer formed using the droplet discharge method, the above-described step of forming the base film 501 is performed, but this treatment step may be performed after the conductive layer is formed.

  Next, a gate insulating film is formed over the conductive layers 502 and 503 (see FIG. 5A). The gate insulating film may be formed of a known material such as a silicon oxide material or a nitride material, and may be a stacked layer or a single layer.

Next, a conductive layer (also referred to as a first electrode) 506 is formed selectively over the gate insulating film by discharging a composition containing a conductive material (see FIG. 2B). The conductive layer 506 is formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxidized when light is emitted from the substrate 500 side or when a transmissive EL display panel is manufactured. A predetermined pattern may be formed by a composition containing zinc (ZnO), tin oxide (SnO ₂ ), and the like, and may be formed by firing. Although not shown, a photocatalytic substance may be formed in the same manner as when the conductive layers 502 and 503 are formed in a region where the conductive layer 506 is formed. The photocatalytic substance improves adhesion, and the conductive layer 506 can be formed by thinning into a desired pattern. The conductive layer 506 becomes a first electrode that functions as a pixel electrode.

  The semiconductor layer may be formed by a known means (such as sputtering, LPCVD, or plasma CVD). There is no limitation on the material of the semiconductor layer, but it is preferably formed of silicon or a silicon germanium (SiGe) alloy.

  As the semiconductor layer, an amorphous semiconductor (typically hydrogenated amorphous silicon), a semi-amorphous semiconductor, a semiconductor containing a crystal phase in part of the semiconductor layer, a crystalline semiconductor (typically polysilicon), or an organic semiconductor is used. Can do.

  In this embodiment mode, an amorphous semiconductor is used as the semiconductor. A semiconductor layer 507 is formed, and a semiconductor layer having one conductivity type, for example, an N-type semiconductor layer 508 is formed by a plasma CVD method or the like. (See FIG. 5C). A semiconductor layer having one conductivity type may be formed as necessary.

  Subsequently, mask layers 511 and 512 made of an insulator such as resist or polyimide are formed, and the semiconductor layer 507 and the N-type semiconductor layer 508 are simultaneously patterned using the mask layers 511 and 512.

  Next, mask layers 513 and 514 made of an insulator such as resist or polyimide are formed by a droplet discharge method (see FIG. 5D). Through holes 518 are formed in part of the gate insulating layers 505 and 504 by etching using the mask layers 513 and 514, and one of the conductive layers 503 functioning as a gate electrode layer disposed on the lower layer side thereof is formed. Expose the part.

  After removing the mask layers 513 and 514, a composition containing a conductive material is discharged to form conductive layers 515, 516 and 517, and the N-type semiconductor layer is formed using the conductive layers 515, 516 and 517 as a mask. Pattern processing is performed to form an N-type semiconductor layer (see FIG. 6E). Note that although not illustrated, a photocatalytic substance may be selectively formed in a portion where the conductive layers 515, 516, and 517 are in contact with the gate insulating layer 505 before the conductive layers 515, 516, and 517 are formed. Then, the conductive layer can be formed with good adhesion.

  The conductive layer 517 functions as a source / drain wiring layer and is formed so as to be electrically connected to the conductive layer 506 which is the first electrode formed previously. In addition, in the through-hole 518 formed in the gate insulating layer 505, the conductive layer 516 which is a source and drain wiring layer and the conductive layer 503 which is a gate electrode layer are electrically connected.

  The step of forming the through hole 518 in part of the gate insulating layers 505 and 504 is performed after the formation of the conductive layers 515, 516, and 517 using the conductive layers 515, 516, and 517 serving as the wiring layers as masks. It may be formed. Then, a conductive layer is formed in the through hole 518, and the conductive layer 516 which is a wiring layer and the conductive layer 503 which is a gate electrode layer are electrically connected. In this case, there is an advantage that the process is simplified.

  Subsequently, an insulating layer 520 serving as a bank (also referred to as a partition wall) is formed. As for the insulating layer 520, an insulating layer is formed on the entire surface by a spin coating method or a dip method, and then an opening is formed as illustrated in FIG. 6F by etching. Further, if the insulating layer 520 is formed by a droplet discharge method, etching is not necessarily required.

  The insulating layer 520 is formed with an opening of a through hole in accordance with a position where a pixel is formed corresponding to the conductive layer 506 which is the first electrode.

  Through the above steps, a TFT substrate in which a bottom gate type (also referred to as an inverted stagger type) channel etch type TFT and a conductive layer 506 which is a first electrode are connected to the substrate 500 is completed.

  A conductive layer 522 is stacked over the electroluminescent layer 521 over the conductive layer 506 which is the first electrode, whereby a light-emitting display device having a display function using a light-emitting element is completed (see FIG. 6F). .

  As described above, in this embodiment mode, the process can be omitted by not using a light exposure process using a photomask. In addition, by forming various patterns directly on the substrate using a droplet discharge method, an EL display panel can be easily manufactured even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. be able to.

  In addition, a highly reliable light-emitting display device with improved adhesion and peel resistance can be manufactured.

(Embodiment 3)
An embodiment of the present invention will be described with reference to FIGS. In this embodiment mode, a top gate (also referred to as a forward stagger) thin film transistor is used as the thin film transistor in Embodiment Mode 1. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

  A base film 901 having a function of improving adhesion is formed over the substrate 900 (see FIG. 9A). Note that an insulating layer may be formed over the substrate 900. This insulating layer is not necessarily formed, but has an effect of blocking contaminants from the substrate 900. In particular, in the case of a forward staggered thin film transistor as in this embodiment mode, the semiconductor layer is in direct contact with the substrate, and thus a base layer is necessary. In the case of forming a base layer for preventing contamination from the glass substrate, a base film 901 is formed as a base film in a formation region of conductive layers 915, 916, and 917 formed thereon by a droplet discharge method.

  In this embodiment mode, a substance having a photocatalytic mechanism is used as the base film 901 having a function of improving adhesion.

In the present embodiment, a case where a TiO _x crystal having a predetermined crystal structure is formed as a photocatalytic substance by a sputtering method will be described. A metal titanium tube is used as a target, and sputtering is performed using argon gas and oxygen. Further, He gas may be introduced. In order to form TiO _x having high photocatalytic activity, the atmosphere is rich in oxygen and the formation pressure is increased. Further, it is preferable to form TiO _x while heating the substrate provided with the film forming chamber or the processed material.

The thus formed TiO _x has a photocatalytic function even if it is a very thin film.

  In addition, as other base pretreatments, metals such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), and Mo (molybdenum) are obtained by sputtering or vapor deposition. It is preferable to form the base film 101 formed of a material or an oxide thereof. The base film 101 may be formed with a thickness of 0.01 to 10 nm. However, since the base film 101 may be formed with a very small thickness, the base film 101 does not necessarily have a layer structure. When a refractory metal material is used as the base film, after forming the conductive layers 915, 916, and 917 functioning as the source / drain wiring layers, the base film exposed on the surface is either of the following two steps: It is desirable to perform the process.

  The first method is a step of forming an insulating layer by insulating the base film 901 that does not overlap with the conductive layers 915, 916, and 917 functioning as source / drain wiring layers. That is, the base film 901 that does not overlap with the conductive layers 915, 916, and 917 functioning as the source / drain wiring layers is oxidized and insulated. As described above, when the base film 901 is oxidized to be insulated, the base layer 01 is preferably formed with a thickness of 0.01 to 10 nm, and can be easily oxidized. . As a method of oxidizing, a method of exposing to an oxygen atmosphere or a method of performing heat treatment may be used.

  The second method is a step of etching and removing the base film 901 using the conductive layers 915, 916, and 917 functioning as source / drain wiring layers as masks. When this step is used, there is no restriction on the thickness of the base film 901.

Further, as another method for the base pretreatment, there is a method for performing plasma treatment on a formation region (formation surface). The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas, and the pressure is several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr ( 106400 Pa), that is, a pulse voltage is applied in a state where the pressure becomes atmospheric pressure or a pressure near atmospheric pressure. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge. By using plasma treatment using a treatment gas of air, oxygen, or nitrogen, surface modification can be performed without material dependency. As a result, surface modification can be performed on any material.

  As another method, an organic material substance that functions as an adhesive may be formed in order to improve the adhesion of the pattern formed by the droplet discharge method to the formation region. Organic material (organic resin material) (polyimide, acrylic) or skeleton structure is composed of a bond of silicon (Si) and oxygen (O), a material containing at least hydrogen as a substituent, or fluorine, alkyl group as a substituent, Alternatively, a material having at least one of aromatic hydrocarbons may be used.

  Next, a composition containing a conductive material is discharged to form conductive layers 915, 916, and 917 functioning as a source / drain wiring layer. The conductive layers 915, 916, and 917 are formed using a droplet discharge unit.

  As a conductive material for forming the conductive layers 915, 916, 917, metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), and Al (aluminum) are mainly used. The composition can be used. In particular, it is not preferable to reduce the resistance of the source and drain wiring layers. In consideration of the specific resistance value, a material in which any of gold, silver, and copper is dissolved or dispersed in a solvent is used. It is preferable to use low resistance silver or copper. The solvent corresponds to esters such as butyl acetate, alcohols such as isopropyl alcohol, organic solvents such as acetone, and the like. The surface tension and the viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

Next, a conductive layer (also referred to as a first electrode) 906 is formed by selectively discharging a composition containing a conductive material (see FIG. 9A). The conductive layer 906 is formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxidized when light is emitted from the substrate 900 side or when a transmissive EL display panel is manufactured. A predetermined pattern may be formed by a composition containing zinc (ZnO), tin oxide (SnO ₂ ), and the like, and may be formed by firing. Although not shown, a photocatalytic substance may be formed in the same manner as when the conductive layers 915, 916, and 917 are formed in a region where the conductive layer 906 is formed. The photocatalytic substance improves adhesion, and the conductive layer 906 can be formed by thinning into a desired pattern. The conductive layer 906 becomes a first electrode that functions as a pixel electrode.

  In addition, as the base pretreatment for the conductive layer formed using the droplet discharge method, the above-described step of forming the base film 901 was performed. This treatment step is performed even after the conductive layers 915, 916, and 917 are formed. You can go. For example, although not shown, when a titanium oxide film is formed and an N-type semiconductor layer is formed thereon, adhesion between the conductive layer and the N-type semiconductor layer is improved.

After an N-type semiconductor layer is formed over the entire surface of the conductive layers 915, 916, and 917, an N-type semiconductor layer between the conductive layer 915 and the conductive layer 916 and between the conductive layer 916 and the conductive layer 917 is resisted. Etching is performed using mask layers 911, 912, and 919 made of an insulator such as silicon or polyimide. A semiconductor layer having one conductivity type may be formed as necessary. Then, a semiconductor layer 907 made of AS or SAS is formed by a vapor deposition method or a sputtering method. When the plasma CVD method is used, AS is formed using SiH ₄ which is a semiconductor material gas or a mixed gas of SiH ₄ and H ₂ . The SAS is formed of a mixed gas by diluting SiH ₄ with H ₂ 3 to 1000 times. In the case of forming a SAS with this gas species, the crystallinity is better on the surface side of the semiconductor layer, and a combination with a top gate type TFT in which the gate electrode is formed on the upper layer of the semiconductor layer is suitable.

  Next, the gate insulating layer 905 is formed with a single layer or a stacked structure by a plasma CVD method or a sputtering method. As a particularly preferable mode, a three-layered structure including an insulating layer made of silicon nitride, an insulating layer made of silicon oxide, and an insulating layer made of silicon nitride is formed as a gate insulating film.

  Next, gate electrode layers 902 and 903 are formed by a droplet discharge method. As a conductive material for forming this layer, a composition mainly composed of metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum) is used. Can do.

,
The semiconductor layer 907 and the gate insulating layer 905 are formed at positions corresponding to the source and drain wiring layers (conductive layers 915, 916, and 917) using mask layers 913 and 914 formed by a droplet discharge method. That is, a semiconductor layer is formed so as to straddle the conductive layer 915 and the conductive layer 916.

  Next, conductive layers 930 and 931 are formed by a droplet discharge method, and the conductive layer 916 and the gate electrode layer 903 are electrically connected to each other, and the conductive layer 917 and the conductive layer 906 which is the first electrode are electrically connected.

  The drain or source wiring layer and the gate electrode layer may be directly connected by the gate electrode layer without using the conductive layer 930. In that case, before forming the gate electrode layers 902 and 903, through-holes are formed in the gate insulating layer 905 to expose part of the conductive layers 916 and 917 which are source and drain wirings, and then the gate electrode layer 902 is formed. , 903 and the conductive layer 931 are formed by a droplet discharge method. At this time, the gate electrode layer 903 serves as a wiring that also serves as the conductive layer 930 and is connected to the conductive layer 916. The etching may be dry etching or wet etching, but plasma etching which is dry etching is preferable.

  Subsequently, an insulating layer 920 to be a bank (also referred to as a partition wall) is formed. Although not illustrated, a protective layer of silicon nitride or silicon nitride oxide may be formed over the entire surface so as to cover the thin film transistor under the insulating layer 920. As for the insulating layer 920, an insulating layer is formed on the entire surface by a spin coating method or a dip method, and then an opening is formed as illustrated in FIG. Further, when the insulating layer 920 is formed by a droplet discharge method, etching is not necessarily required. In the case of forming a wide area such as the insulating layer 920 by using a droplet discharge method, if a composition is discharged from a plurality of nozzle discharge ports of a droplet discharge device and drawn so that a plurality of lines overlap, the throughput is increased. improves.

  The insulating layer 920 is formed with an opening of a through hole in accordance with a position where a pixel is formed corresponding to the conductive layer 906 that is the first electrode.

  Through the above steps, a TFT substrate in which a top gate TFT (also referred to as an inverted staggered TFT) and a conductive layer 906 which is a first electrode layer are connected to the substrate 900 is completed.

  Before forming the electroluminescent layer 921, heat treatment is performed at 200 ° C. under atmospheric pressure to remove moisture adsorbed in the insulating layer 920 or on the surface thereof. Further, it is preferable to perform heat treatment at 200 to 400 ° C., preferably 250 to 350 ° C. under reduced pressure, and to form the electroluminescent layer 921 by vacuum deposition or a droplet discharge method under reduced pressure without being exposed to the air as it is. .

  A conductive layer 922 is stacked over the electroluminescent layer 921 over the conductive layer 906 which is the first electrode, whereby a light-emitting display device having a display function using a light-emitting element is completed (see FIG. 10E). ).

  As described above, in this embodiment mode, the process can be omitted by not using a light exposure process using a photomask. In addition, by forming various patterns directly on the substrate using a droplet discharge method, an EL display panel can be easily manufactured even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. be able to.

  In addition, a highly reliable light-emitting display device with improved adhesion and peel resistance can be manufactured.

(Embodiment 4)
An embodiment of the present invention will be described with reference to FIGS. This embodiment is different from the first embodiment in the connection structure between the thin film transistor and the first electrode. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

On the substrate 300, a base film 301 for improving adhesion is formed as a base pretreatment. In the present embodiment, a case where a TiO _x crystal having a predetermined crystal structure is formed as a photocatalytic substance by a sputtering method will be described. A metal titanium tube is used as a target, and sputtering is performed using argon gas and oxygen. Further, He gas may be introduced. In order to form TiO _x having high photocatalytic activity, the atmosphere is rich in oxygen and the formation pressure is increased. Further, it is preferable to form TiO _x while heating the substrate provided with the film forming chamber or the processed material.

The thus formed TiO _x has a photocatalytic function even if it is a very thin film.

  In addition, as other base pretreatments, metals such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), and Mo (molybdenum) are obtained by sputtering or vapor deposition. It is preferable to form the base film 301 formed of a material or an oxide thereof. The base film 301 may be formed with a thickness of 0.01 to 10 nm. However, since the base film 301 may be formed with a very thin thickness, the base film 301 does not necessarily have a layer structure. When a refractory metal material is used as the base film, after forming the conductive layers 302 and 303 to be the gate electrode layers, the base film exposed on the surface is subjected to one of the following two processes. It is desirable to process.

  The first method is a step of forming an insulating layer by insulating the base film 301 that does not overlap with the conductive layers 302 and 303. That is, the base film 301 that does not overlap with the conductive layers 302 and 303 is oxidized and insulated. As described above, when the base film 301 is oxidized to be insulated, it is preferable to form the base layer 01 with a thickness of 0.01 to 10 nm so that it can be easily oxidized. . As a method of oxidizing, a method of exposing to an oxygen atmosphere or a method of performing heat treatment may be used.

  The second method is a step of removing the base film 101 by etching using the conductive layers 302 and 303 as a mask. When this step is used, there is no restriction on the thickness of the base film 301.

Further, as another method for the base pretreatment, there is a method for performing plasma treatment on a formation region (formation surface). The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas, and the pressure is several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr ( 106400 Pa), that is, a pulse voltage is applied in a state of atmospheric pressure or a pressure close to atmospheric pressure. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge. By using plasma treatment using a treatment gas of air, oxygen, or nitrogen, surface modification can be performed without material dependency. As a result, surface modification can be performed on any material.

  As another method, an organic material substance that functions as an adhesive may be formed in order to improve the adhesion of the pattern formed by the droplet discharge method to the formation region. Organic material (organic resin material) (polyimide, acrylic) or skeleton structure is composed of a bond of silicon (Si) and oxygen (O), a material containing at least hydrogen as a substituent, or fluorine, alkyl group as a substituent, Alternatively, a material having at least one of aromatic hydrocarbons may be used.

  Next, a composition containing a conductive material is discharged to form conductive layers 302 and 303 that function as gate electrodes later. The conductive layers 302 and 303 are formed using a droplet discharge unit. In this embodiment mode, silver is used as the conductive material, but a laminate of silver and copper may be used. Moreover, a copper single layer may be sufficient.

  Further, as the base pretreatment of the conductive layer formed using the droplet discharge method, the above-described step of forming the base film 301 is performed. However, this treatment step may be performed after the conductive layer is formed.

  Next, a gate insulating film is formed over the conductive layers 302 and 303 (see FIG. 3A). The gate insulating film may be formed of a known material such as a silicon oxide material or a nitride material, and may be a stacked layer or a single layer.

  The semiconductor layer may be formed by a known means (such as sputtering, LPCVD, or plasma CVD). There is no limitation on the material of the semiconductor layer, but it is preferably formed of silicon or a silicon germanium (SiGe) alloy.

  As the semiconductor layer, an amorphous semiconductor (typically hydrogenated amorphous silicon), a semi-amorphous semiconductor, a semiconductor containing a crystal phase in part of the semiconductor layer, a crystalline semiconductor (typically polysilicon), or an organic semiconductor is used. Can do.

  In this embodiment mode, an amorphous semiconductor is used as the semiconductor. In order to form the semiconductor layer 307 and the channel protective films 309 and 310, for example, an insulating film is formed by a plasma CVD method and patterned in a desired region so as to have a desired shape. The channel protective film may be formed of polyimide or polyvinyl alcohol by a droplet discharge method or a printing method (a method for forming a pattern such as screen printing or offset printing). Thereafter, a semiconductor layer having one conductivity type, for example, an N-type semiconductor layer 308 is formed by a plasma CVD method or the like. A semiconductor layer having one conductivity type may be formed as necessary.

  Subsequently, mask layers 311 and 312 made of an insulator such as resist or polyimide are formed, and the semiconductor layer 307 and the N-type semiconductor layer 308 are simultaneously patterned using the mask layers 311 and 312.

  Next, mask layers 313 and 314 made of an insulator such as resist or polyimide are formed by a droplet discharge method (see FIG. 3C). Using the mask layers 313 and 314, through holes 318 are formed in part of the gate insulating layers 305 and 304 by etching, and one of the conductive layers 303 functioning as the gate electrode layer disposed on the lower layer side is formed. Expose the part. The etching process may be either plasma etching (dry etching) or wet etching, but plasma etching is suitable for processing a large area substrate. Further, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

  After removing the mask layers 313 and 314, a composition containing a conductive material is discharged to form conductive layers 315, 316, and 317, and the N-type semiconductor layer is formed using the conductive layers 315, 316, and 317 as a mask. Pattern processing is performed (see FIG. 3D). Note that although not shown in the drawing, the above-described base pretreatment, in which a photocatalytic substance or the like is selectively formed in a portion where the conductive layers 315, 316, and 317 are in contact with the gate insulating layer 305 before forming the conductive layers 315, 316, and 317. A process may be performed. In addition, after the formation, the surface may be pretreated. By this step, the conductive layer can be formed with good adhesion to the upper and lower layers to be stacked.

  In addition, the conductive layers 315, 316, and 317 that are wiring layers are formed so as to cover the N-type semiconductor layer and the semiconductor layer as illustrated in FIG. Since the semiconductor layer is patterned by etching, there is a possibility that the wiring layer cannot be covered at a sudden step and may be disconnected. Therefore, in order to reduce the step, the insulating layers 341, 342, and 343 may be formed to make the step gentle. The insulating layers 341, 342, and 343 can be selectively formed without a mask or the like when a droplet discharge method is used. The insulating layers 341, 342, and 343 reduce the level difference, and the wiring layer that covers the insulating layers 341, 342, and 343 can be formed with good coverage without defects such as breakage. The insulating layers 341, 342, and 343 include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and other inorganic insulating materials, or acrylic acid, methacrylic acid, and derivatives thereof, or polyimide ( polyimide, aromatic polyamide, polybenzimidazole and other heat-resistant polymers, or inorganic compounds containing Si-O-Si bonds among silicon, oxygen and hydrogen compounds formed from siloxane-based materials Siloxane and hydrogen on silicon can be formed of an organic siloxane insulating material in which an organic group such as methyl or phenyl is substituted.

Subsequently, a composition containing a conductive material is selectively discharged over the gate insulating film so as to be in contact with the conductive layer 317 functioning as a source / drain wiring layer, so that a conductive layer (also referred to as a first electrode) 306 is formed. (See FIG. 4E). The conductive layer 306 is formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxidized when light is emitted from the substrate 300 side or when a transmissive EL display panel is manufactured. A predetermined pattern may be formed by a composition containing zinc (ZnO), tin oxide (SnO ₂ ), and the like, and may be formed by firing. Although not shown, base pretreatment such as formation of a photocatalytic substance may be performed in the same manner as when the conductive layers 302 and 303 are formed in a region where the conductive layer 306 is formed. By the base pretreatment, the adhesion is improved, and the conductive layer 306 can be formed by thinning into a desired pattern. The conductive layer 306 becomes a first electrode that functions as a pixel electrode.

  In addition, in the through-hole 318 formed in the gate insulating layer 305, the conductive layer 316 which is a source and drain wiring layer and the conductive layer 303 which is a gate electrode layer are electrically connected. As a conductive material for forming the wiring layer, a composition containing metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum) as a main component is used. be able to. Further, light-transmitting indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like may be combined.

  In the step of forming the through-hole 318 in part of the gate insulating layers 305 and 304, the through-hole 318 is formed using the conductive layers 315, 316, 317, and 306 as a mask after the formation of the conductive layers 315, 316, 317, and 306. May be. Then, a conductive layer is formed in the through hole 318 and the conductive layer 316 and the conductive layer 303 which is a gate electrode layer are electrically connected.

  Subsequently, an insulating layer 320 to be a bank (also referred to as a partition wall) is formed. Although not shown, a protective layer of silicon nitride or silicon nitride oxide may be formed on the entire surface so as to cover the thin film transistor under the insulating layer 320. For the insulating layer 320, an insulating layer is formed on the entire surface by a spin coating method or a dip method, and then an opening is formed as illustrated in FIG. 4F by etching. Further, if the insulating layer 320 is formed by a droplet discharge method, etching is not necessarily required. In the case of forming a wide area such as the insulating layer 320 by using a droplet discharge method, if a composition is discharged from a plurality of nozzle discharge ports of a droplet discharge device and drawn so that a plurality of lines overlap, the throughput is increased. improves.

  The insulating layer 320 is formed with an opening of a through hole in accordance with a position where a pixel is formed corresponding to the conductive layer 306 which is the first electrode.

  Through the above steps, a TFT substrate for an EL display panel in which a bottom gate type (also referred to as an inverted staggered type) channel protective TFT and a conductive layer (first electrode layer) 306 are connected to the substrate 300 is completed. .

  A conductive layer 322 is stacked over the electroluminescent layer 321 over the conductive layer 306 which is the first electrode, whereby a light-emitting display device having a display function using a light-emitting element is completed (see FIG. 4F). .

  As described above, in this embodiment mode, the process can be omitted by not using a light exposure process using a photomask. In addition, by forming various patterns directly on the substrate using a droplet discharge method, an EL display panel can be easily manufactured even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. be able to.

  In addition, a highly reliable light-emitting display device with improved adhesion and peel resistance can be manufactured.

(Embodiment 5)
An embodiment of the present invention will be described with reference to FIGS. The present embodiment is different from the second embodiment in the connection structure between the thin film transistor and the first electrode. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

Over the substrate 700, a base film 701 for improving adhesion is formed as a base pretreatment. In the present embodiment, a case where a TiO _x crystal having a predetermined crystal structure is formed as a photocatalytic substance by a sputtering method will be described. A metal titanium tube is used as a target, and sputtering is performed using argon gas and oxygen. Further, He gas may be introduced. In order to form TiO _x having high photocatalytic activity, the atmosphere is rich in oxygen and the formation pressure is increased. Further, it is preferable to form TiO _x while heating the substrate provided with the film forming chamber or the processed material.

The thus formed TiO _x has a photocatalytic function even if it is a very thin film.

  In addition, as other base pretreatments, metals such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), and Mo (molybdenum) are obtained by sputtering or vapor deposition. It is preferable to form a base film 701 made of a material or an oxide thereof. The base film 701 may be formed with a thickness of 0.01 to 10 nm. However, since the base film 701 may be formed with a very thin thickness, it does not necessarily have a layer structure. When a refractory metal material is used as the base film, after forming the conductive layers 702 and 703 to be the gate electrode layers, the base film exposed on the surface is subjected to either of the following two processes. It is desirable to process.

  The first method is a step of forming an insulating layer by insulating the base film 701 that does not overlap with the conductive layers 702 and 703. That is, the base film 701 that does not overlap with the conductive layers 702 and 703 is oxidized and insulated. As described above, in the case where the base film 701 is oxidized and insulated, it is preferable to form the base film 701 with a thickness of 0.01 to 10 nm, so that the base film 701 can be easily oxidized. . As a method of oxidizing, a method of exposing to an oxygen atmosphere or a method of performing heat treatment may be used.

  The second method is a step of removing the base film 701 by etching using the conductive layers 702 and 703 as a mask. When this process is used, the thickness of the base film 101 is not limited.

Further, as another method for the base pretreatment, there is a method for performing plasma treatment on a formation region (formation surface). The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas, and the pressure is several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr ( 106400 Pa), that is, a pulse voltage is applied in a state where the pressure becomes atmospheric pressure or a pressure near atmospheric pressure. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge. By using plasma treatment using a treatment gas of air, oxygen, or nitrogen, surface modification can be performed without material dependency. As a result, surface modification can be performed on any material.

  As another method, an organic material substance that functions as an adhesive may be formed in order to improve the adhesion of the pattern formed by the droplet discharge method to the formation region. Organic material (organic resin material) (polyimide, acrylic) or skeleton structure is composed of a bond of silicon (Si) and oxygen (O), a material containing at least hydrogen as a substituent, or fluorine, alkyl group as a substituent, Alternatively, a material having at least one of aromatic hydrocarbons may be used.

  Next, a composition containing a conductive material is discharged, so that conductive layers 702 and 703 that function as gate electrodes later are formed. The conductive layers 702 and 703 are formed using a droplet discharge unit. In this embodiment mode, silver is used as the conductive material, but a laminate of silver and copper may be used. Moreover, a copper single layer may be sufficient.

  Further, as the base pretreatment of the conductive layer formed using the droplet discharge method, the above-described step of forming the base film 701 is performed; however, this treatment step may be performed after the conductive layer is formed.

  Next, a gate insulating film is formed over the conductive layers 702 and 703 (see FIG. 7A). The gate insulating film may be formed of a known material such as a silicon oxide material or a nitride material, and may be a stacked layer or a single layer.

  The semiconductor layer may be formed by a known means (such as sputtering, LPCVD, or plasma CVD). There is no limitation on the material of the semiconductor layer, but it is preferably formed of silicon or a silicon germanium (SiGe) alloy.

  As the semiconductor layer, an amorphous semiconductor (typically hydrogenated amorphous silicon), a semi-amorphous semiconductor, a semiconductor containing a crystal phase in part of the semiconductor layer, a crystalline semiconductor (typically polysilicon), or an organic semiconductor is used. Can do.

In this embodiment mode, an amorphous semiconductor is used as the semiconductor. A semiconductor layer 707 is formed, and a semiconductor layer having one conductivity type, for example, an N-type semiconductor layer 708 is formed by a plasma CVD method or the like. A semiconductor layer having one conductivity type may be formed as necessary.

  Subsequently, mask layers 711 and 712 made of an insulator such as resist or polyimide are formed, and the semiconductor layer 707 and the N-type semiconductor layer 708 are simultaneously patterned using the mask layers 711 and 712 (FIG. 7B )reference).

  Next, mask layers 713 and 714 made of an insulator such as resist or polyimide are formed by a droplet discharge method (see FIG. 7C). Using the mask layers 713 and 714, a through hole 718 is formed in part of the gate insulating layers 705 and 704 by etching, and one of the conductive layers 703 functioning as the gate electrode layer disposed on the lower layer side thereof. Expose the part. The etching process may be either plasma etching (dry etching) or wet etching, but plasma etching is suitable for processing a large area substrate. Further, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

  After removing the mask layers 713 and 714, a composition containing a conductive material is discharged to form the conductive layers 715, 716, and 717, and the N-type semiconductor layer is patterned using the conductive layers 715, 716, and 717 as a mask. Processing is performed (see FIG. 7D). Note that although not illustrated, the above-described base pretreatment in which a photocatalytic substance or the like is selectively formed in a portion where the conductive layers 715, 716, and 717 are in contact with the gate insulating layer 705 before the conductive layers 715, 716, and 717 are formed. A process may be performed. In addition, after the formation, the surface may be pretreated. By this step, the conductive layer can be formed with good adhesion to the upper and lower layers to be stacked.

Subsequently, a composition containing a conductive material is selectively discharged over the gate insulating film so as to be in contact with the conductive layer 717 functioning as a source / drain wiring layer, so that a conductive layer (also referred to as a first electrode) 706 is formed. (See FIG. 8E). The conductive layer 706 is formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxidized when light is emitted from the substrate 700 side or when a transmissive EL display panel is manufactured. A predetermined pattern may be formed by a composition containing zinc (ZnO), tin oxide (SnO ₂ ), and the like, and may be formed by firing. Although not shown, base pretreatment such as formation of a photocatalytic substance may be performed in the same manner as when the conductive layers 702 and 703 are formed in a region where the conductive layer 706 is formed. By the base pretreatment, the adhesion is improved, and the conductive layer 706 can be formed by thinning into a desired pattern. The conductive layer 706 becomes a first electrode that functions as a pixel electrode.

  In addition, in the through-hole 718 formed in the gate insulating layer 705, the conductive layer 716 which is a source and drain wiring layer and the conductive layer 703 which is a gate electrode layer are electrically connected. As a conductive material for forming this conductive layer, a composition containing metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum) as a main component is used. be able to. Further, light-transmitting indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like may be combined.

  In the step of forming the through-hole 718 in part of the gate insulating layers 705 and 704, the through-hole 718 is formed using the conductive layers 715, 716, 717, and 706 as a mask after the formation of the conductive layers 715, 716, 717, and 706. May be. Then, a conductive layer is formed in the through hole 718 and the conductive layer 716 and the conductive layer 703 which is a gate electrode layer are electrically connected.

  Subsequently, an insulating layer 720 to be a bank (also referred to as a partition wall) is formed. Although not shown, a protective layer of silicon nitride or silicon nitride oxide may be formed over the entire surface so as to cover the thin film transistor under the insulating layer 720. For the insulating layer 720, an insulating layer is formed on the entire surface by spin coating or dipping, and then openings are formed as illustrated in FIG. 8F by etching. Further, if the insulating layer 720 is formed by a droplet discharge method, etching is not necessarily required. In the case of forming a wide area such as the insulating layer 720 by using a droplet discharge method, if a composition is discharged from a plurality of nozzle discharge ports of a droplet discharge device and drawn so that a plurality of lines overlap, the throughput is increased. improves.

  The insulating layer 720 is formed with an opening portion of a through hole corresponding to a position where a pixel is formed corresponding to the conductive layer 706 which is the first electrode.

  Through the above steps, a TFT substrate for an EL display panel in which a bottom gate type (also referred to as an inverted stagger type) channel etch type TFT and a first electrode (first electrode layer) 706 are connected to the substrate 700 is completed. To do.

  A conductive layer 722 is stacked on the electroluminescent layer 721 over the conductive layer 706 which is the first electrode, whereby a light-emitting display device having a display function using a light-emitting element is completed (see FIG. 8F). ).

  As described above, in this embodiment mode, the process can be omitted by not using a light exposure process using a photomask. In addition, by forming various patterns directly on the substrate using a droplet discharge method, an EL display panel can be easily manufactured even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. be able to.

  In addition, a highly reliable light-emitting display device with improved adhesion and peel resistance can be manufactured.

(Embodiment 6)
An embodiment of the present invention will be described with reference to FIGS. The present embodiment is different from the third embodiment in the connection structure between the thin film transistor and the first electrode. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

  A base film 201 having a function of improving adhesion is formed over the substrate 200 (see FIG. 11A). Note that an insulating layer may be formed over the substrate 200. This insulating layer is not necessarily formed, but has an effect of blocking contaminants from the substrate 200. In particular, in the case of a forward staggered thin film transistor as in this embodiment mode, since the semiconductor layer is in direct contact with the substrate, the base layer is effective. In the case of forming a base layer for preventing contamination from the glass substrate, a base film 201 is formed as a base film in a formation region of the conductive layers 202 and 203 formed thereon by a droplet discharge method.

  In this embodiment mode, a substance having a photocatalytic mechanism is used as the base film 201 having a function of improving adhesion.

In the present embodiment, a case where a TiO _x crystal having a predetermined crystal structure is formed as a photocatalytic substance by a sputtering method will be described. A metal titanium tube is used as a target, and sputtering is performed using argon gas and oxygen. Further, He gas may be introduced. In order to form TiO _x having high photocatalytic activity, the atmosphere is rich in oxygen and the formation pressure is increased. Further, it is preferable to form TiO _x while heating the substrate provided with the film forming chamber or the processed material.

The thus formed TiO _x has a photocatalytic function even if it is a very thin film.

  In addition, as other base pretreatments, metals such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), and Mo (molybdenum) are obtained by sputtering or vapor deposition. It is preferable to form the base film 201 formed of a material or an oxide thereof. The base film 201 may be formed with a thickness of 0.01 to 10 nm. However, since the base film 201 may be formed with a very thin thickness, the base film 201 does not necessarily have a layer structure. When a refractory metal material is used as the base film, after forming the conductive layers 215, 216, and 217 functioning as the source / drain wiring layers, the base film exposed on the surface is changed to one of the following two steps. It is desirable to perform the process.

  The first method is a step of insulating the base film 201 that does not overlap with the conductive layers 215, 216, and 217 functioning as the source / drain wiring layers to form an insulating layer. That is, the base film 201 that does not overlap with the conductive layers 215, 216, and 217 functioning as the source / drain wiring layers is oxidized and insulated. As described above, when the base film 201 is oxidized and insulated, it is preferable to form the base layer 01 with a thickness of 0.01 to 10 nm so that the base film 201 can be easily oxidized. . As a method of oxidizing, a method of exposing to an oxygen atmosphere or a method of performing heat treatment may be used.

  The second method is a step of removing the base film 201 by etching using the conductive layers 215, 216, and 217 functioning as source / drain wiring layers as masks. When this step is used, there is no restriction on the thickness of the base film 201.

Further, as another method for the base pretreatment, there is a method for performing plasma treatment on a formation region (formation surface). The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas, and the pressure is several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr ( 106400 Pa), that is, a pulse voltage is applied in a state where the pressure becomes atmospheric pressure or a pressure near atmospheric pressure. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge. By using plasma treatment using a treatment gas of air, oxygen, or nitrogen, surface modification can be performed without material dependency. As a result, surface modification can be performed on any material.

  As another method, an organic material substance that functions as an adhesive may be formed in order to improve the adhesion of the pattern formed by the droplet discharge method to the formation region. Organic material (organic resin material) (polyimide, acrylic) or skeleton structure is composed of a bond of silicon (Si) and oxygen (O), a material containing at least hydrogen as a substituent, or fluorine, alkyl group as a substituent, Alternatively, a material having at least one of aromatic hydrocarbons may be used.

  Next, a conductive layer 215, 216, or 217 that functions as a source / drain wiring layer is formed by discharging a composition containing a conductive material. The conductive layers 215, 216, and 217 are formed using a droplet discharge unit.

  As a conductive material for forming the conductive layers 215, 216, and 217, metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), and Al (aluminum) are mainly used. The composition can be used. In particular, it is not preferable to reduce the resistance of the source and drain wiring layers. In consideration of the specific resistance value, a material in which any of gold, silver, and copper is dissolved or dispersed in a solvent is used. It is preferable to use low resistance silver or copper. Alternatively, particles in which a conductive material is coated with another conductive material to form a plurality of layers may be used. For example, particles having a three-layer structure in which nickel boron (NiB) is coated around copper and silver is coated around it may be used. The solvent corresponds to esters such as butyl acetate, alcohols such as isopropyl alcohol, organic solvents such as acetone, and the like. The surface tension and the viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

  In addition, as the base pretreatment of the conductive layer formed using the droplet discharge method, the above-described step of forming the base film 201 was performed. This treatment step is performed even after the conductive layers 215, 216, and 217 are formed. You can go. For example, although not shown, when a titanium oxide film is formed and an N-type semiconductor layer is formed thereon, adhesion between the conductive layer and the N-type semiconductor layer is improved.

After an N-type semiconductor layer is formed over the entire surface of the conductive layers 215, 216, and 217, an N-type semiconductor layer between the conductive layers 215 and 216 and between the conductive layers 216 and 217 is formed using a resist, polyimide, or the like. Etching is performed using mask layers 211, 212, and 219 made of an insulator. A semiconductor layer having one conductivity type may be formed as necessary. Then, a semiconductor layer 207 made of AS or SAS is formed by vapor deposition or sputtering. When the plasma CVD method is used, AS is formed using SiH ₄ which is a semiconductor material gas or a mixed gas of SiH ₄ and H ₂ . The SAS is formed of a mixed gas by diluting SiH ₄ with H ₂ 3 to 1000 times. In the case of forming a SAS with this gas species, the crystallinity is better on the surface side of the semiconductor layer, and a combination with a top gate type TFT in which the gate electrode is formed on the upper layer of the semiconductor layer is suitable.

  Next, the gate insulating layer 205 is formed with a single layer or a stacked structure by a plasma CVD method or a sputtering method (see FIG. 11B). As a particularly preferable mode, a three-layered structure including an insulating layer made of silicon nitride, an insulating layer made of silicon oxide, and an insulating layer made of silicon nitride is formed as a gate insulating film.

  Next, conductive layers 202 and 203 which are gate electrode layers are formed by a droplet discharge method (see FIG. 11C). As a conductive material for forming this layer, a composition mainly composed of metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum) is used. Can do.

,
The semiconductor layer 207 and the gate insulating layer 205 are formed at positions corresponding to the source and drain wiring layers (conductive layers 215, 216, and 217) using mask layers 213 and 214 formed by a droplet discharge method. That is, a semiconductor layer is formed so as to straddle the conductive layers 215 and 216 which are source and drain wiring layers.

  Next, conductive layers 230 and 231 are formed by a droplet discharge method, and the conductive layer 216 and the conductive layer 203 are electrically connected.

Subsequently, a conductive layer (also referred to as a first electrode) 206 is formed by selectively discharging a composition containing a conductive material so as to be in contact with the conductive layer 231. Further, the conductive layer 206 may be in direct contact with the conductive layer 217. The conductive layer 206 is formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxidized when light is emitted from the substrate 200 side or when a transmissive EL display panel is manufactured. A predetermined pattern may be formed by a composition containing zinc (ZnO), tin oxide (SnO ₂ ), and the like, and may be formed by firing. Although not shown, a photocatalytic substance may be formed in the same manner as when the conductive layers 215, 216, and 217 are formed in a region where the conductive layer 206 is formed. The photocatalytic substance improves adhesion, and the conductive layer 206 can be formed by thinning into a desired pattern. The conductive layer 206 serves as a first electrode that functions as a pixel electrode.

  The drain or source wiring layer and the gate electrode layer may be directly connected by the gate electrode layer without using the conductive layer 230. In that case, before forming the conductive layers 202 and 203 which are the gate electrode layers, through holes are formed in the gate insulating layer 205 and part of the conductive layers 216 and 217 which are the source and drain wirings are exposed. Conductive layers 202 and 203 which are gate electrode layers and a conductive layer 231 are formed by a droplet discharge method. At this time, the conductive layer 203 serves as a wiring also serving as the conductive layer 230 and is connected to the conductive layer 216. The etching may be dry etching or wet etching, but plasma etching which is dry etching is preferable.

  Subsequently, an insulating layer 220 to be a bank (also referred to as a partition wall) is formed. Although not shown, a protective layer of silicon nitride or silicon nitride oxide may be formed on the entire surface so as to cover the thin film transistor under the insulating layer 220. As for the insulating layer 220, an insulating layer is formed on the entire surface by a spin coating method or a dip method, and then an opening is formed as illustrated in FIG. 12E by etching. Further, if the insulating layer 220 is formed by a droplet discharge method, etching is not necessarily required. In the case of forming a wide area such as the insulating layer 220 by using a droplet discharge method, if a composition is discharged from a plurality of nozzle discharge ports of a droplet discharge device and drawn so that a plurality of lines overlap with each other, throughput is improved. improves.

  The insulating layer 220 is formed with an opening of a through hole in accordance with a position where a pixel is formed corresponding to the conductive layer 206 which is the first electrode.

  Through the above steps, a TFT substrate in which a top gate type (also referred to as a forward stagger type) TFT and a conductive layer (first electrode layer) 206 are connected to the substrate 200 is completed.

  Before forming the electroluminescent layer 221, heat treatment is performed at 200 ° C. under atmospheric pressure to remove moisture adsorbed in or on the insulating layer 220. In addition, it is preferable to perform heat treatment at 200 to 400 ° C., preferably 250 to 350 ° C. under reduced pressure, and to form the electroluminescent layer 221 by vacuum deposition or droplet discharge under reduced pressure without being exposed to the air as it is. .

  A conductive layer 222 is stacked over the electroluminescent layer 221 over the conductive layer 206 which is the first electrode, whereby a light-emitting display device having a display function using a light-emitting element is completed (see FIG. 12E). ).

  As described above, in this embodiment mode, the process can be omitted by not using a light exposure process using a photomask. In addition, by forming various patterns directly on the substrate using a droplet discharge method, an EL display panel can be easily manufactured even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. be able to.

  In addition, a highly reliable light-emitting display device with improved adhesion and peel resistance can be manufactured.

(Embodiment 2)
An embodiment of the present invention will be described with reference to FIGS. This embodiment is different from Embodiment 1 in that a method of connecting the conductive layer 116 which is a wiring layer and the conductive layer 103 which is a gate electrode layer through the gate insulating layer 105 is different. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

  A base film 101 that improves adhesion is formed over the substrate 100 (see FIG. 14A). Note that an insulating layer may be formed over the substrate 100.

  In this embodiment mode, a substance having a photocatalytic mechanism is used as the base film 101 having a function of improving adhesion.

In the present embodiment, a case where a TiO _x crystal having a predetermined crystal structure is formed as a photocatalytic substance by a sputtering method will be described. A metal titanium tube is used as a target, and sputtering is performed using argon gas and oxygen. Further, He gas may be introduced. In order to form TiO _x having high photocatalytic activity, the atmosphere is rich in oxygen and the formation pressure is increased. Further, it is preferable to form TiO _x while heating the substrate provided with the film forming chamber or the processed material.

The thus formed TiO _x has a photocatalytic function even if it is a very thin film.

  In addition, as other base pretreatments, metals such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), and Mo (molybdenum) are obtained by sputtering or vapor deposition. It is preferable to form the base film 101 formed of a material or an oxide thereof. The base film 101 may be formed with a thickness of 0.01 to 10 nm. However, since the base film 101 may be formed with a very small thickness, the base film 101 does not necessarily have a layer structure. When a refractory metal material is used as the base film, after forming the conductive layers 102 and 103 to be the gate electrode layers, the base film exposed on the surface is subjected to one of the following two processes. It is desirable to process.

  The first method is a step of insulating the base film 101 that does not overlap with the conductive layers 102 and 103 to form an insulating layer. That is, the base film 101 that does not overlap with the conductive layers 102 and 103 is oxidized and insulated. As described above, when the base film 101 is oxidized to be insulated, the base layer 01 is preferably formed with a thickness of 0.01 to 10 nm, and can be easily oxidized. . As a method of oxidizing, a method of exposing to an oxygen atmosphere or a method of performing heat treatment may be used.

  The second method is a step of removing the base film 101 by etching using the conductive layers 102 and 103 as a mask. When this process is used, the thickness of the base film 101 is not limited.

Further, as another method for the base pretreatment, there is a method for performing plasma treatment on a formation region (formation surface). The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas, and the pressure is several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr ( 106400 Pa), that is, a pulse voltage is applied in a state where the pressure becomes atmospheric pressure or a pressure near atmospheric pressure. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge. By using plasma treatment using a treatment gas of air, oxygen, or nitrogen, surface modification can be performed without material dependency. As a result, surface modification can be performed on any material.

  As another method, an organic material substance that functions as an adhesive may be formed in order to improve the adhesion of the pattern formed by the droplet discharge method to the formation region. Organic material (organic resin material) (polyimide, acrylic) or skeleton structure is composed of a bond of silicon (Si) and oxygen (O), a material containing at least hydrogen as a substituent, or fluorine, alkyl group as a substituent, Alternatively, a material having at least one of aromatic hydrocarbons may be used.

  Next, a composition containing a conductive material is discharged to form conductive layers 102 and 103 that function as gate electrodes later. The conductive layers 102 and 103 are formed using a droplet discharge means.

  After the conductive layer 103 is formed, a composition containing a conductive material is locally discharged to form the conductor 140 functioning as a pillar. The conductor 140 is preferably formed into a columnar shape by depositing the discharged composition. This is because, when the columnar conductor 140 is used, the contact between the lower layer pattern and the upper layer pattern is reduced. It is because it is easy to take. The conductor 140 may be formed using the same material as the conductive layer 103 or a different material, and may be formed by discharging a composition in a stacked manner.

In addition, after the conductive layer 103 is formed, the above-described base pretreatment may be performed on the conductive layer 103 in order to improve adhesion again. In addition, it is preferable that the base film treatment is similarly performed after the conductor 140 serving as a pillar is formed. When a base pretreatment such as formation of a photocatalytic substance such as TiO _x is performed, the film layers can be formed with good adhesion.

  Next, a gate insulating film is formed over the conductive layers 102 and 103 (see FIG. 14A).

  Subsequently, a conductive layer (also referred to as a first electrode) 106 is formed over the gate insulating film by selectively discharging a composition containing a conductive material (see FIG. 14B). Although not shown, a photocatalytic substance may be formed in the same manner as when the conductive layers 102 and 103 are formed in a region where the conductive layer 106 is formed. The photocatalytic substance improves adhesion, and the conductive layer 106 can be formed by thinning into a desired pattern. The conductive layer 106 serves as a first electrode that functions as a pixel electrode.

  In this embodiment mode, an amorphous semiconductor is used as the semiconductor. In order to form the semiconductor layer 107, which is an amorphous semiconductor layer, and to form the channel protective films 109 and 110, for example, an insulating film is formed by a plasma CVD method and is patterned in a desired region to have a desired shape. To do. At this time, the channel protective films 109 and 110 can be formed by exposing from the back surface of the substrate using the gate electrode as a mask. For the channel protective film, polyimide or polyvinyl alcohol may be dropped using a droplet discharge method. As a result, the exposure process can be omitted. Thereafter, an N-type semiconductor layer 108 is formed using a semiconductor layer having one conductivity type, for example, an N-type amorphous semiconductor layer, by a plasma CVD method or the like. (See FIG. 14C.) A semiconductor layer having one conductivity type may be formed as necessary.

  Subsequently, mask layers 111 and 112 made of an insulator such as resist or polyimide are formed, and the semiconductor layer 107 and the N-type semiconductor layer 108 are patterned simultaneously using the mask layers 111 and 112.

  In this embodiment mode, a conductor that is already connected to the conductive layer 103 that is a gate electrode layer by the conductor 140 functioning as a pillar penetrates the gate insulating layer 105 and exists on the gate insulating layer 105. Therefore, it is possible to omit the step of forming a through hole in the gate insulating layer.

  A conductive layer 115, 116, 117 is formed by discharging a composition containing a conductive material, and the N-type semiconductor layer is patterned using the conductive layers 115, 116, 117 as a mask. Note that although not illustrated, a photocatalytic substance may be selectively formed in a portion where the conductive layers 115, 116, and 117 are in contact with the gate insulating layer 105 before the conductive layers 115, 116, and 117 are formed. Then, the conductive layer can be formed with good adhesion.

  The conductive layer 117 functions as a source / drain wiring layer and is formed so as to be electrically connected to the previously formed first electrode. The conductive layer 116 which is a source and drain wiring layer can be electrically connected to the conductive layer 103 which is a gate electrode layer through the conductor 140 (see FIG. 15E). If an insulating layer or the like remains on the conductor 140 functioning as a pillar, it may be removed by etching or the like.

  Subsequently, an insulating layer 120 serving as a bank (also referred to as a partition wall) is formed.

  The insulating layer 120 is formed with an opening of a through hole in accordance with a position where a pixel is formed corresponding to the conductive layer 106 which is the first electrode.

  Through the above steps, a TFT substrate for an EL display panel in which a bottom gate type (also referred to as an inverted stagger type) channel protective TFT and a first electrode (first electrode layer) are connected to the substrate 100 is completed. .

  A conductive layer 122 is stacked over the electroluminescent layer 121 over the conductive layer 106 which is the first electrode, whereby a light-emitting display device having a display function using a light-emitting element is completed (see FIG. 15F). ).

  As described above, in this embodiment mode, the process can be omitted by not using a light exposure process using a photomask. In addition, by forming various patterns directly on the substrate using a droplet discharge method, an EL display panel can be easily manufactured even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. be able to.

  In addition, a highly reliable light-emitting display device with improved adhesion and peel resistance can be manufactured. The connection method using a pillar in the through hole of this embodiment can be freely combined with the above embodiment.

  A thin film transistor is formed by applying the present invention, and a light-emitting display device can be formed using the thin film transistor. A light-emitting element is used as a display element, and an N-type transistor is used as a transistor for driving the light-emitting element. When used, the light emitted from the light emitting element performs any one of bottom emission, top emission, and double emission. Here, a stacked structure of light-emitting elements corresponding to any case will be described with reference to FIGS.

  In this example, the present invention is applied and the transistor 451 which is a channel protective thin film transistor formed in Embodiment 1 is used.

  First, a case where light is emitted to the substrate 450 side, that is, a case where bottom emission is performed will be described with reference to FIG. In this case, source / drain wirings 452 and 453, a first electrode 454, an electroluminescent layer 455, and a second electrode 456 are sequentially stacked so as to be electrically connected to the transistor 451. Next, a case where light is emitted to the side opposite to the substrate 450, that is, a case where top emission is performed will be described with reference to FIG. Source / drain wirings 461 and 462 electrically connected to the transistor 451, a first electrode 463, an electroluminescent layer 464, and a second electrode 465 are sequentially stacked. With the above structure, even when light is transmitted through the first electrode 463, the light is reflected by the wiring 462 and emitted to the side opposite to the substrate 450. Note that in this structure, it is not necessary to use a light-transmitting material for the first electrode 463. Lastly, a case where light is emitted to the substrate 450 side and the opposite side, that is, a case where dual emission is performed will be described with reference to FIG. Source / drain wirings 470 and 471 electrically connected to the transistor 451, a first electrode 472, an electroluminescent layer 473, and a second electrode 474 are sequentially stacked. At this time, when both the first electrode 472 and the second electrode 474 are formed using a light-transmitting material or a thickness capable of transmitting light, dual emission is realized.

  The light emitting element has a structure in which an electroluminescent layer is sandwiched between a first electrode and a second electrode. It is necessary to select materials for the first electrode and the second electrode in consideration of a work function, and both the first electrode and the second electrode can be an anode or a cathode depending on a pixel configuration. In this embodiment mode, since the polarity of the driving TFT is an N-channel type, it is preferable that the first electrode be a cathode and the second electrode be an anode. In the case where the polarity of the driving TFT is a p-channel type, the first electrode may be an anode and the second electrode may be a cathode.

  When the first electrode is an anode, the electroluminescent layer is formed from the anode side from the HIL (hole injection layer), HTL (hole transport layer), EML (light-emitting layer), ETL (electron transport layer), EIL ( It is preferable to laminate in the order of the electron injection layer). When the first electrode is a cathode, the reverse is true, and from the cathode side, EIL (electron injection layer), ETL (electron transport layer), EML (light emitting layer), HTL (hole transport layer), HIL ( The hole injection layer) and the anode as the second electrode are preferably laminated in this order. The electroluminescent layer can have a single layer structure or a mixed structure in addition to the laminated structure.

  In addition, as the electroluminescent layer, materials that emit red (R), green (G), and blue (B) light are selectively formed by an evaporation method using an evaporation mask, respectively. A material that emits red (R), green (G), and blue (B) light can be formed by a droplet discharge method (such as a low-molecular or high-molecular material) in the same manner as a color filter. In this case, a mask is not used. Both are preferable because RGB can be separately applied.

Specifically, CuPc or PEDOT is used as HIL, α-NPD is used as HTL, BCP or Alq _{3 is used} as ETL, and BCP: Li or CaF ₂ is used as EIL. Further, for example, EML may be Alq ₃ doped with a dopant corresponding to each emission color of R, G, and B (DCM in the case of R, DMQD in the case of G).

  Note that the electroluminescent layer is not limited to the above materials. For example, instead of CuPc or PEDOT, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) and α-NPD or rubrene can be co-evaporated to improve the hole injection property. The material of the electroluminescent layer can be used as an organic material (including a low molecule or a polymer), or a composite material of an organic material and an inorganic material.

  Although not shown in FIG. 17, a color filter may be formed on the counter substrate of the substrate 450. The color filter can be formed by a droplet discharge method, and in this case, an optical plasma treatment or the like can be applied as the above-described base pretreatment. With the base film of the present invention, a color filter can be formed in a desired pattern with good adhesion. When a color filter is used, high-definition display can be performed. This is because the color filter can correct a broad peak to be sharp in the emission spectrum of each RGB.

  As described above, the case where a material that emits light of each RGB is formed has been described. However, full color display can be performed by forming a material that emits light of a single color and combining a color filter and a color conversion layer. For example, when an electroluminescent layer that emits white or orange light is formed, full color display can be performed by separately providing a color filter or a color filter, a color conversion layer, or a combination of a color filter and a color conversion layer. The color filter and the color conversion layer may be formed on, for example, a second substrate (sealing substrate) and attached to the substrate. In addition, as described above, any of the material that emits monochromatic light, the color filter, and the color conversion layer can be formed by a droplet discharge method.

  Of course, monochromatic light emission may be displayed. For example, an area color type light emitting display device may be formed using monochromatic light emission. As the area color type, a passive matrix type display unit is suitable, and characters and symbols can be mainly displayed.

  In the above configuration, a material having a small work function can be used as the cathode, and for example, Ca, Al, CaF, MgAg, AlLi, or the like is desirable. The electroluminescent layer may be a single layer type, a laminated type, or a mixed type having no layer interface, and a singlet material, a triplet material, or a combination thereof, a low molecular material, a polymer material, and a medium molecule. Any of organic materials including materials, inorganic materials typified by molybdenum oxide having excellent electron injection properties, and composite materials of organic materials and inorganic materials may be used. The first electrodes 454, 463, and 472 are formed using a transparent conductive film that transmits light. For example, in addition to ITO and ITSO, a transparent conductive film in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide is used. Use. Note that plasma treatment in an oxygen atmosphere or heat treatment in a vacuum atmosphere is preferably performed before the first electrodes 454, 463, and 472 are formed. A partition wall (also referred to as a bank) is formed using a material containing silicon, an organic material, and a compound material. A porous film may be used. However, it is preferable to use a photosensitive or non-photosensitive material such as acrylic or polyimide because the side surface has a shape in which the radius of curvature continuously changes and the upper thin film is formed without being cut off. This embodiment can be freely combined with the above embodiment modes.

  The appearance of a panel which is one embodiment of a light-emitting display device to which the present invention is applied will be described with reference to FIGS.

  In the panel shown in FIG. 20, a driver IC in which a driver circuit is formed around a pixel portion 751 is mounted by a COG (Chip On Glass) method. Of course, the driver IC may be mounted by a TAB (Tape Automated Bonding) method.

  The substrate 750 is fixed by a counter substrate 753 and a sealant 752. The pixel portion 751 may use an EL element as a display medium. As the driver ICs 755a and 755b and the driver ICs 757a, 757b, and 757c, in addition to an integrated circuit formed using a single crystal semiconductor, a similar TFT formed using a polycrystalline semiconductor may be formed. Signals and power are supplied to the driver ICs 755a and 755b and the driver ICs 757a, 757b, and 757c via the FPCs 754a, 754b, and 754c or the FPCs 756a and 756b.

  A structure of the light-emitting display device of the present invention having a display function will be described with reference to FIG. FIG. 23 is a top view illustrating an outline of a light-emitting display device. A pixel portion (display portion) 6102 and protective circuits 6103 and 6104 are provided over a substrate 6100, and a driver on a signal line side is routed through a lead wiring. The IC 6107 is connected to the driver IC 6104 on the scanning line side. In the case where an amorphous semiconductor or a microcrystalline semiconductor is used as an element included in the pixel portion 6102, driver ICs 6107 and 6108 are mounted by a known method such as a COG method or a TAB method as illustrated, and these driver ICs are mounted. It may be used as a driver circuit. Note that in the case where a microcrystalline semiconductor is used as an element included in the pixel portion 6102, a driver circuit on the scan line side may be formed using the microcrystalline semiconductor and a driver IC 6107 may be mounted on the signal line side. As a configuration different from the above, a configuration in which a part of the driving circuits on the scanning side and the signal line side is formed on the same substrate and a part is replaced with a driver IC may be used. In other words, the configuration of the driver IC varies, and the present invention may use any configuration.

  Next, a pixel circuit of the light-emitting display device of the present invention having a display function will be described with reference to FIG. FIG. 24A shows an equivalent circuit diagram of the pixel 6101. The pixel 6101 is provided in a region surrounded by wirings of the signal line 6114, the power supply lines 6115 and 6117, and the scan line 6116. A TFT 6110 for controlling input of a video signal to the TFT, a TFT 6111 for controlling a current value flowing between both electrodes of the light emitting element 6113, and a capacitor element 6112 for holding a gate-source voltage of the TFT 6111. Note that although the capacitor 6112 is illustrated in FIG. 24B, the capacitor 6112 is not necessarily provided when it can be covered by the gate capacitance of the TFT 6111 or other parasitic capacitance.

  FIG. 24B illustrates a pixel circuit in which a TFT 6118 and a scan line 6119 are newly provided in the pixel 6101 illustrated in FIG. The arrangement of the TFT 6118 can forcibly create a state in which no current flows to the light-emitting element 6113. Therefore, the lighting period is started immediately after or immediately after the writing period without waiting for signal writing to all pixels. be able to. Therefore, the duty ratio is improved, and moving images can be displayed particularly well.

FIG. 24C illustrates a pixel circuit in which the TFT 6111 of the pixel 6101 illustrated in FIG. 24B is deleted and TFTs 6125 and 6126 and a wiring 6127 are newly provided. In this structure, the gate electrode of the TFT 6125 is connected to the wiring 6127 which is held at a constant potential, so that the potential of the gate electrode is fixed and the TFT 6125 is operated in the saturation region. In addition, a video signal that transmits information on lighting or non-lighting of the pixel is input to the gate electrode of the TFT 6126 that is connected in series with the TFT 6125 and operates in a linear region through the TFT 6110. Since the value of the voltage between the source and the drain of the TFT 6126 operating in the linear region is small, a slight variation in the voltage between the gate and the source of the TFT 6126 does not affect the value of the current flowing through the light emitting element 6113. Therefore, the value of current flowing through the light emitting element 6113 is determined by the TFT 6125 operating in the saturation region. In the present invention having the above structure, luminance unevenness of the light-emitting element 6113 due to variation in characteristics of the TFT 6125 can be improved and image quality can be improved. Note that the channel length L ₁ and channel width W _{1 of} the TFT 6125 and the channel length L ₂ and channel width W ₂ of the TFT 6126 are set so as to satisfy L ₁ / W ₁ : L ₂ / W ₂ = 5 to 6000: 1. Good. Further, it is preferable in the manufacturing process that both TFTs have the same conductivity type. Further, as the TFT 6125, not only an enhancement type but also a depletion type TFT may be used.

  FIG. 16 is a top view of the pixel circuit having the above structure. In FIGS. 16A and 16B, a region surrounded by the signal line 6703, the power supply line 6704, the scanning line 6705, and the power supply line 6706 is illustrated. , TFTs 6700, 6701, 6702, and a capacitor 6708, and a pixel electrode 6707 is connected to the source or drain of the TFT 6701.

  Note that either an analog video signal or a digital video signal may be used for the light-emitting display device of the present invention having a display function. However, when a digital video signal is used, it differs depending on whether the video signal uses voltage or current. That is, when the light emitting element emits light, a video signal input to the pixel includes a constant voltage signal and a constant current signal. A video signal having a constant voltage includes a constant voltage applied to the light emitting element and a constant current flowing through the light emitting element. In addition, a video signal having a constant current includes a constant voltage applied to the light emitting element and a constant current flowing in the light emitting element. A constant voltage applied to the light emitting element is constant voltage driving, and a constant current flowing through the light emitting element is constant current driving. In constant current driving, a constant current flows regardless of the resistance change of the light emitting element. In the light emitting display device and the driving method thereof of the present invention, either a voltage video signal or a current video signal may be used, and either a constant voltage drive or a constant current drive may be used. This embodiment can be freely combined with the above embodiment modes and embodiments.

  An example of a protection circuit included in the light-emitting display device of the present invention will be described. The protection circuit is composed of one or a plurality of elements selected from a TFT, a diode, a resistance element, a capacitance element, and the like, and the configurations and operations of some protection circuits will be described below. First, a configuration of an equivalent circuit diagram of a protection circuit arranged between an external circuit and an internal circuit and corresponding to one input terminal will be described with reference to FIG. The protection circuit illustrated in FIG. 25A includes P-type TFTs 7220 and 7230, capacitor elements 7210 and 7240, and a resistance element 7250. The resistance element 7250 is a two-terminal resistor, and an input voltage Vin (hereinafter referred to as Vin) is applied to one end, and a low potential voltage VSS (hereinafter referred to as VSS) is applied to the other end. The resistance element 7250 is provided to set the potential of the wiring to VSS when Vin is no longer applied to the input terminal, and the resistance value is set sufficiently larger than the wiring resistance of the wiring.

  When Vin is higher than a high potential voltage VDD (hereinafter referred to as VDD), the TFT 7122 is turned on and the TFT 7123 is turned off because of the gate-source voltage. Then, VDD is supplied to the wiring through the TFT 7122. Therefore, even if Vin becomes higher than VDD due to noise or the like, the voltage applied to the wiring does not become higher than VDD. On the other hand, when Vin is lower than VSS, the TFT 7122 is turned off and the TFT 7123 is turned on because of the gate-source voltage. Then, VSS is given to the wiring. Therefore, even if Vin is lower than VSS due to noise or the like, the voltage applied to the wiring does not become higher than VDD. Further, the capacitor elements 7121 and 7124 can damp pulsed noise in the voltage from the input terminal, and abrupt changes in voltage due to noise can be reduced to some extent.

  With the arrangement of the protection circuit having the above configuration, the voltage of the wiring is kept in a range between VSS and VDD, and is protected from application of an abnormally high or low voltage outside this range. Further, by providing a protection circuit at an input terminal to which a signal is input, the voltage of all wirings to which a signal is applied can be kept constant (here, VSS) when no signal is input. it can. In other words, when a signal is not input, it also has a function as a short ring that can make the wirings short-circuited. For this reason, electrostatic breakdown due to a voltage difference between the wirings can be prevented. Further, when a signal is input, the resistance value of the resistor 125 is sufficiently large, so that a signal applied to the wiring is not pulled by VSS.

  The protection circuit shown in FIG. 25B is an equivalent circuit diagram in which P-type TFTs 7122 and 7123 are substituted with rectifying diodes 7126 and 7127. The protection circuit shown in FIG. 25C is an equivalent circuit diagram in which the P-type TFTs 7122 and 7123 are substituted by TFTs 7350, 7360, 7370, and 7380. Further, as a protection circuit having a different structure from the above, the protection circuit illustrated in FIG. 25D includes resistors 7128 and 7129 and a transistor 7130. The protection circuit illustrated in FIG. 25E includes resistors 7280 and 7290, a P-type TFT 7310, and an N-type TFT 7320. 25D and 25E, a wiring or the like is connected to the terminal 7330, and the N-type TFT 7300 or the P-type TFT 7310 and the N-type TFT 7320 are turned on when the potential of the wiring or the like changes abruptly. As a result, current flows in the direction of terminals 7330 to 7340. Then, rapid fluctuations in the potential connected to the terminal 7330 can be reduced, and damage or destruction of the element can be prevented. Note that the element forming the protection circuit is preferably formed using an amorphous semiconductor with excellent withstand voltage. This embodiment can be freely combined with the above embodiment modes.

  With the light-emitting display device formed according to the present invention, an EL television receiver (television device) can be completed. FIG. 21 is a block diagram showing the main configuration of an EL television receiver. In the EL display panel, as shown in FIG. 20, when the pixel line 751 and the scanning line side driver circuit and the signal line side driver circuit are mounted around the pixel part 751 by the COG method, only the pixel part is formed. When the scanning line side driving circuit and the signal line side driving circuit are mounted by the TAB method, a TFT is formed by SAS, the pixel portion and the scanning line side driving circuit are integrally formed on the substrate, and the signal line side driving circuit is formed. Although it may be separately mounted as a driver IC, it may be in any form.

  As other external circuit configurations, on the input side of the video signal, among the signals received by the tuner 804, the video signal amplifier circuit 805 that amplifies the video signal, and the signals output from the video signal amplifier circuit 805 are red, green, and blue colors. And a control circuit 807 for converting the video signal into the input specification of the driver IC. The control circuit 807 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 808 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

  Of the signals received by the tuner 804, the audio signal is sent to the audio signal amplifier circuit 809, and the output is supplied to the speaker 813 through the audio signal processing circuit 810. The control circuit 811 receives control information on the receiving station (reception frequency) and volume from the input unit 812, and sends a signal to the tuner 804 and the audio signal processing circuit 810.

  A television receiver can be completed by incorporating such an external circuit and incorporating the EL module into a housing 2001 as shown in FIG. A display screen 821 is formed by an EL display module, and a speaker 822, an operation switch 824, and the like are provided as other accessory equipment. As described above, a television receiver can be completed according to the present invention.

  Moreover, you may make it cut off the reflected light of the light which injects from the outside using a wavelength plate or a polarizing plate. As the wave plate, λ / 4 or λ / 2 may be used and designed so that light can be controlled. The structure is, in order, a TFT element substrate, a light emitting element, a sealing substrate (sealing material), a wave plate (λ / 4 \ λ / 2), and a polarizing plate, and light emitted from the light emitting element passes through them. The light is emitted from the polarizing plate side to the outside. The wave plate and the polarizing plate may be installed on the side from which light is emitted, and may be installed on both as long as the light emitting display device is a dual emission type that emits light on both sides. Further, an antireflection film may be provided outside the polarizing plate. This makes it possible to display a higher-definition and precise image.

  A display panel 2002 using an EL element is incorporated in the housing 2001, and a receiver 2005 receives a general television broadcast and connects to a wired or wireless communication network via a modem 2004 in one direction ( Information communication can also be performed in a bidirectional manner (between the sender and the receiver, or between the sender and the receiver). The television receiver can be operated by a switch incorporated in the housing or a separate remote control device 2006. Even if this remote control device is provided with a display unit 2007 for displaying information to be output. good.

  Further, the television receiver may have a configuration in which a sub screen 2008 is formed using the second display panel in addition to the main screen 2003 to display a channel, a volume, and the like. The main screen 2003 and the sub screen 2008 may be formed by an EL display panel. In this configuration, the main screen 2003 is formed by an EL display panel having an excellent viewing angle, and the sub screen can be displayed with low power consumption. A liquid crystal display panel may be used. In order to prioritize the reduction in power consumption, the main screen 2003 may be formed using a liquid crystal display panel, the sub screen may be formed using an EL display panel, and the sub screen may blink. When the present invention is used, a highly reliable light-emitting display device can be obtained even when such a large substrate is used and a large number of TFTs and electronic components are used.

  Of course, the present invention is not limited to a television receiver, and is applied to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

  Various light-emitting display devices can be manufactured by applying the present invention. That is, the present invention can be applied to various electronic devices in which these light emitting display devices are incorporated in a display portion.

  Such electronic devices include video cameras, digital cameras, projectors, head mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, game machines, personal digital assistants (mobile computers, mobile phones, electronic books, etc.) ), An image reproducing apparatus provided with a recording medium (specifically, an apparatus provided with a display capable of reproducing a recording medium such as a digital versatile disc (DVD) and displaying the image). Examples thereof are shown in FIG.

  FIG. 18A illustrates a laptop personal computer including a main body 2101, a housing 2102, a display portion 2103, a keyboard 2104, an external connection port 2105, a pointing mouse 2106, and the like. The present invention is applied to manufacturing the display portion 2103. When the present invention is used, a highly reliable high-quality image can be displayed even if the size is reduced and wiring and the like are refined.

  FIG. 18B shows an image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2201, a housing 2202, a display portion A 2203, a display portion B 2204, and a recording medium (DVD etc.) reading portion 2205. , An operation key 2206, a speaker portion 2207, and the like. The display portion A 2203 mainly displays image information, and the display portion B 2204 mainly displays character information. The present invention is applied to the manufacture of the display portion A 2203 and the display portion B 2204. When the present invention is used, a highly reliable high-quality image can be displayed even if the size is reduced and wiring and the like are refined.

  FIG. 18C shows a mobile phone, which includes a main body 2301, an audio output portion 2302, an audio input portion 2303, a display portion 2304, operation switches 2305, an antenna 2306, and the like. By applying the light-emitting display device manufactured according to the present invention to the display portion 2304, a highly reliable high-quality image can be displayed even when the mobile phone is downsized and wiring and the like are refined.

  FIG. 26A shows a video camera, which includes a main body 2401, a display portion 2402, a housing 2403, an external connection port 2404, a remote control receiving portion 2405, an image receiving portion 2406, a battery 2407, an audio input portion 2408, operation keys 2409, and the like. . The present invention can be applied to the display portion 2402 and is a dual emission type light emitting display device. FIGS. 26B and 26C show images displayed on the display portion 2402. FIG. 26B shows a captured image, and FIG. 26C shows an image that can be seen from the captured vehicle. Since the light-emitting display device of the present invention is a transmissive type and can display images on both sides, an image taken from the subject side can also be viewed. Therefore, it is convenient to photograph yourself. In addition to the video camera, the present invention can be applied to a digital video camera or the like, and the same effect can be obtained. By applying the light-emitting display device manufactured according to the present invention to the display portion 2304, a highly reliable and high-quality image can be displayed even when the video camera is downsized and wiring and the like are precise. This embodiment can be freely combined with the above embodiment modes and embodiments.

  The effect of improving the adhesion by the substrate pretreatment of the present invention was evaluated by experiments.

It is formed by spraying TiO _x , and a composition using silver as a conductive material is discharged, fired at 230 degrees, and 16 silver wires are formed with a length of 1 cm, a width of 200 to 300 μm, and a height of 4000 to 5000 mm. did. As a result of conducting a tensile test on the formed silver wiring with Kapton tape, the silver wiring was not peeled off. Moreover, as a result of being immersed in 0.5 wt% HF liquid for 1 minute and washing with running water, 16 silver wires were not peeled off. Therefore, it was confirmed that the adhesion was improved by the base pretreatment of forming a TiO _x film having a photocatalytic effect.

A Ti thin film is formed in a thickness of 10 to 50 mm by a sputtering method, and a composition containing silver as a conductive material is similarly discharged onto a TiO _x thin film formed by firing at 230 degrees, and then fired again at 230 degrees to form silver. Sixteen wires were formed with a length of 1 cm, a width of 200 to 300 μm, and a height of 4000 to 5000 mm. It was confirmed that the formed TiO _x thin film was insulative with a sheet resistance of 1 × 10 ⁶ (Ω / □) or more. As a result of performing a tensile test on the formed silver wiring with Kapton tape, the silver wiring was not peeled off. Moreover, as a result of being immersed in 0.5 wt% HF liquid for 1 minute and washing with running water, 16 silver wires were not peeled off. Therefore, it was confirmed that the adhesion was improved by the base pretreatment of forming the TiO _x film of the present invention.

  As a comparative example, as a result of performing the HF treatment liquid on the silver wiring formed in the region where the base pretreatment was not performed, the silver wiring was peeled off, and only about a few remained.

  Therefore, adhesion is improved by the base pretreatment of the present invention, and a highly reliable light-emitting display device can be provided.

4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting display device of the present invention. 4 is a top view of a pixel circuit of a light-emitting display device of the present invention. FIG. 4A and 4B illustrate a light-emitting display device of the present invention. FIG. 11 illustrates an electronic device to which the present invention is applied. FIG. 11 illustrates an electronic device to which the present invention is applied. The top view of the panel which is one form of the semiconductor device to which this invention was applied 1 is a block diagram illustrating a main configuration of an electronic device of the present invention. 2A and 2B illustrate a structure of a droplet discharge device that can be applied to the present invention. FIG. 10 illustrates a light-emitting display device to which the present invention is applied. FIG. 14 illustrates a pixel circuit of a light-emitting display device to which the present invention is applied. FIG. 11 illustrates a protection circuit included in a light-emitting display device of the present invention. FIG. 11 illustrates an electronic device to which the present invention is applied.

Claims (25)

A gate electrode provided through a substance having a photocatalytic function on a substrate having an insulating surface;
A gate insulating layer provided on the gate electrode;
A semiconductor layer and a first electrode provided on the gate insulating layer;
A wiring layer provided on the semiconductor layer;
A partition wall covering the end portion of the first electrode and the wiring layer;
An electroluminescent layer on the first electrode;
A second electrode on the electroluminescent layer;
The light-emitting display device, wherein the wiring layer covers an end portion of the first electrode. A wiring provided on a substrate having an insulating surface via a substance having a photocatalytic function, and a first electrode;
A semiconductor layer provided on the wiring;
A gate insulating layer provided on the semiconductor layer;
A gate electrode provided on the gate insulating layer;
A partition wall covering the end portion of the first electrode and the wiring layer;
An electroluminescent layer on the first electrode;
A second electrode on the electroluminescent layer;
The light-emitting display device, wherein the wiring layer covers an end portion of the first electrode. A gate electrode provided through a substance having a photocatalytic function on a substrate having an insulating surface;
A gate insulating layer provided on the gate electrode;
A semiconductor layer and a first electrode provided on the gate insulating layer;
A wiring layer provided on the semiconductor layer;
A partition wall covering the end portion of the first electrode and the wiring layer;
An electroluminescent layer on the first electrode;
A second electrode on the electroluminescent layer;
The light emitting display device, wherein the first electrode covers an end portion of the wiring layer. A wiring layer provided on a substrate having an insulating surface via a substance having a photocatalytic function, and a first electrode;
A semiconductor layer provided on the wiring layer;
A gate insulating layer provided on the semiconductor layer;
A gate electrode provided on the gate insulating layer;
A partition wall covering the end portion of the first electrode and the wiring layer;
An electroluminescent layer on the first electrode;
A second electrode on the electroluminescent layer;
The light emitting display device, wherein the first electrode covers an end portion of the wiring layer.   5. The light-emitting display device according to claim 1, wherein the substance having a photocatalytic function is titanium oxide. A conductive layer containing a refractory metal on a substrate having an insulating surface;
A gate electrode provided on the conductive layer;
A gate insulating layer provided on the gate electrode;
A semiconductor layer and a first electrode provided on the gate insulating layer;
A wiring layer provided on the semiconductor layer;
A partition wall covering the end portion of the first electrode and the wiring layer;
An electroluminescent layer on the first electrode;
A second electrode on the electroluminescent layer;
The light-emitting display device, wherein the wiring layer covers an end portion of the first electrode. A conductive layer containing a refractory metal on a substrate having an insulating surface;
A wiring layer provided on the conductive layer, and a first electrode;
A semiconductor layer provided on the wiring layer;
A gate insulating layer provided on the semiconductor layer;
A gate electrode provided on the gate insulating layer;
A partition wall covering the end portion of the first electrode and the wiring layer;
An electroluminescent layer on the first electrode;
A second electrode on the electroluminescent layer;
The light-emitting display device, wherein the wiring layer covers an end portion of the first electrode. A conductive layer containing a refractory metal on a substrate having an insulating surface;
A gate electrode provided on the conductive layer;
A gate insulating layer provided on the gate electrode;
A semiconductor layer and a first electrode provided on the gate insulating layer;
A wiring layer provided on the semiconductor layer;
A partition wall covering the end portion of the first electrode and the wiring layer;
An electroluminescent layer on the first electrode;
A second electrode on the electroluminescent layer;
The light emitting display device, wherein the first electrode covers an end portion of the wiring layer. A conductive layer containing a refractory metal on a substrate having an insulating surface;
A wiring layer provided on the conductive layer, and a first electrode;
A semiconductor layer provided on the wiring layer;
A gate insulating layer provided on the semiconductor layer;
A gate electrode provided on the gate insulating layer;
A partition wall covering the end portion of the first electrode and the wiring layer;
An electroluminescent layer on the first electrode;
A second electrode on the electroluminescent layer;
The light emitting display device, wherein the first electrode covers an end portion of the wiring layer.   10. The refractory metal according to claim 6, wherein the refractory metal is Ti (titanium), W (tungsten), Cr (chromium), Al (aluminum), Ta (tantalum), Ni (nickel), Zr ( Zirconium), Hf (hafnium), V (vanadium), Ir (iridium), Nb (niobium), Pd (lead), Pt (platinum), Mo (molybdenum), Co (cobalt) or Rh (rhodium) A light emitting display device characterized by the above.   11. The light-emitting display device according to claim 1, wherein the gate electrode and the wiring layer are made of silver, gold, copper, or indium tin oxide.   12. The light-emitting display device according to claim 1, wherein the semiconductor layer is a semi-amorphous semiconductor including hydrogen and a halogen element and including a crystal structure.   A light-emitting display device according to any one of claims 1 to 12, wherein a display screen is configured. A gate electrode is formed by a droplet discharge method through a substance having a photocatalytic function on a substrate having an insulating surface,
Forming a gate insulating layer on the gate electrode;
Forming a semiconductor layer on the gate insulating layer;
Forming a first electrode on the gate insulating layer by a droplet discharge method;
On the semiconductor layer, a wiring layer is formed so as to cover an end portion of the first electrode by a droplet discharge method,
A partition is formed so as to cover the end portion of the first electrode and the wiring layer,
Forming an electroluminescent layer on the first electrode;
A method for manufacturing a light-emitting display device, comprising forming a second electrode over the electroluminescent layer by a droplet discharge method. A first electrode is formed by a droplet discharge method on a substrate having an insulating surface through a substance having a photocatalytic function;
A wiring layer is formed on the substrate having the insulating surface so as to cover an end portion of the first electrode by a droplet discharge method through the substance having the photocatalytic function,
Forming a semiconductor layer on the wiring layer;
Forming a gate insulating layer on the semiconductor layer;
Forming a gate electrode on the gate insulating layer by a droplet discharge method;
A partition is formed so as to cover the end portion of the first electrode and the wiring layer,
Forming an electroluminescent layer on the first electrode;
A method for manufacturing a light-emitting display device, comprising forming a second electrode over the electroluminescent layer by a droplet discharge method. A gate electrode is formed by a droplet discharge method through a substance having a photocatalytic function on a substrate having an insulating surface,
Forming a gate insulating layer on the gate electrode;
Forming a semiconductor layer on the gate insulating layer;
A wiring layer is formed on the semiconductor layer by a droplet discharge method,
On the gate insulating layer, a first electrode is formed so as to cover an end portion of the wiring layer by a droplet discharge method,
A partition is formed so as to cover the end portion of the first electrode and the wiring layer,
Forming an electroluminescent layer on the first electrode;
A method for manufacturing a light-emitting display device, comprising forming a second electrode over the electroluminescent layer by a droplet discharge method. A wiring layer is formed by a droplet discharge method through a substance having a photocatalytic function on a substrate having an insulating surface,
A first electrode is formed on the substrate having the insulating surface so as to cover an end of the wiring layer by a droplet discharge method through the substance having the photocatalytic function,
Forming a semiconductor layer on the wiring layer;
Forming a gate insulating layer on the semiconductor layer;
Forming a gate electrode on the gate insulating layer by a droplet discharge method;
A partition is formed so as to cover the end portion of the first electrode and the wiring layer,
Forming an electroluminescent layer on the first electrode;
A method for manufacturing a light-emitting display device, comprising forming a second electrode over the electroluminescent layer by a droplet discharge method.   The method for manufacturing a light-emitting display device according to claim 14, wherein titanium oxide is used as the substance having a photocatalytic function. Forming a conductive layer containing a refractory metal on a substrate having an insulating surface;
Forming a gate electrode on the conductive layer by a droplet discharge method;
Forming a gate insulating layer on the gate electrode;
Forming a semiconductor layer on the gate insulating layer;
Forming a first electrode on the gate insulating layer by a droplet discharge method;
A wiring layer is formed on the semiconductor layer so as to cover an end portion of the first electrode by a droplet discharge method,
A partition is formed so as to cover the end portion of the first electrode and the wiring layer,
Forming an electroluminescent layer on the first electrode;
A method for manufacturing a light-emitting display device, comprising forming a second electrode over the electroluminescent layer by a droplet discharge method. Forming a conductive layer containing a refractory metal on a substrate having an insulating surface;
Forming a first electrode on the conductive layer by a droplet discharge method;
A wiring layer is formed on the conductive layer so as to cover an end portion of the first electrode by a droplet discharge method,
Forming a semiconductor layer on the wiring layer;
Forming a gate insulating layer on the semiconductor layer;
Forming a gate electrode on the gate insulating layer by a droplet discharge method;
A partition is formed so as to cover the end portion of the first electrode and the wiring layer,
Forming an electroluminescent layer on the first electrode;
A method for manufacturing a light-emitting display device, comprising forming a second electrode over the electroluminescent layer by a droplet discharge method. Forming a conductive layer containing a refractory metal on a substrate having an insulating surface;
Forming a gate electrode on the conductive layer by a droplet discharge method;
Forming a gate insulating layer on the gate electrode;
Forming a semiconductor layer on the gate insulating layer;
A wiring layer is formed on the semiconductor layer by a droplet discharge method,
On the gate insulating layer, a first electrode is formed so as to cover an end portion of the wiring layer by a droplet discharge method,
A partition is formed so as to cover the end portion of the first electrode and the wiring layer,
Forming an electroluminescent layer on the first electrode;
A method for manufacturing a light-emitting display device, comprising forming a second electrode over the electroluminescent layer by a droplet discharge method. Forming a conductive layer containing a refractory metal on a substrate having an insulating surface;
A wiring layer is formed on the conductive layer by a droplet discharge method,
On the conductive layer, a first electrode is formed so as to cover an end of the wiring layer by a droplet discharge method,
Forming a semiconductor layer on the wiring layer;
Forming a gate insulating layer on the semiconductor layer;
Forming a gate electrode on the gate insulating layer by a droplet discharge method;
A partition is formed so as to cover the end portion of the first electrode and the wiring layer,
Forming an electroluminescent layer on the first electrode;
A method for manufacturing a light-emitting display device, comprising forming a second electrode over the electroluminescent layer by a droplet discharge method.   23. The refractory metal according to claim 19, wherein the refractory metal is Ti (titanium), W (tungsten), Cr (chromium), Al (aluminum), Ta (tantalum), Ni (nickel), Zr ( Zirconium), Hf (hafnium), V (vanadium), Ir (iridium), Nb (niobium), Pd (lead), Pt (platinum), Mo (molybdenum), Co (cobalt) or Rh (rhodium) A manufacturing method of a light-emitting display device characterized by the above.   24. The method for manufacturing a light-emitting display device according to claim 14, wherein the gate electrode and the wiring layer are formed using silver, gold, copper, or indium tin oxide. 25. The method for manufacturing a light-emitting display device according to any one of claims 14 to 24, wherein the semiconductor layer is formed using a semi-amorphous semiconductor including hydrogen and a halogen element and including a crystal structure.

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