JP2005167107A - Semiconductor manufacturing apparatus and method of manufacturing semiconductor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and method in which more appropriate wafer temperature control for a reduced time is realized particularly in a multi-chamber process. <P>SOLUTION: A semiconductor manufacturing apparatus 11 comprises a plurality of treatment chambers PC, PC, ... around a conveyance chamber 12. A group of these treatment chambers PC and a treatment chamber dedicated to temperature control (temperature control chamber) 13 are provided together. The temperature control chamber 13 switches between a high-vacuum state of vacuum exhaustion, and a state of introducing inert gases and increasing atmospheric pressure, in a short cycle approximately with several seconds. With regard to a wafer WF placed on a placing stand 131, pressures are unbalanced on front and rear surfaces of the wafer by switching from the high-vacuum state to the state of high atmospheric pressure. Thus, the wafer WF is pressed onto the placing stand 131 which transmits a temperature, speedy heat exchange occurs, and wafer temperature control is quickly completed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to semiconductor device manufacturing, and more particularly to a semiconductor manufacturing device and a semiconductor device manufacturing method that require cooling or overheating of a substrate.

  There are many processes in vacuum related to semiconductor manufacturing processes. At that time, temperature control of the substrate is indispensable. For example, in a process involving plasma treatment, the vapor pressure of the reaction product depends on the temperature of the substrate surface, and the reaction probability also depends on the temperature. There are various methods for raising and lowering the substrate temperature to a desired temperature in a vacuum. For example, a predetermined temperature is transmitted to the substrate using techniques such as gas supply to the back surface of the substrate, electrostatic chucking, and clamping. However, it takes a certain amount of processing time to bring the substrate temperature to the intended temperature.

On the other hand, with respect to a method for cooling a substrate to be processed for LCD, when plasma processing is performed, a cooling effect is enhanced by bringing the substrate to be processed and a lower electrode on which the substrate is placed into close contact with each other by a pressure difference with the processing chamber. A technique is disclosed (for example, see Patent Document 1).
JP-A-9-326385 (page 3-5, FIG. 1)

  By using the technique disclosed in the above [Patent Document 1], it is considered that the temperature control time of the substrate can be further shortened. However, in a semiconductor manufacturing process in which a multi-chamber process is generalized, it can be said that it is excessive to obtain the sequence and technical configuration of the cooling method for each process chamber. For example, electrostatic chucking can be attracted and held on the entire back surface of the substrate, and the technology is established to some extent and widely used. In a multi-chamber process, a technique for further shortening the temperature control time of the substrate while utilizing the current configuration as much as possible is ideal.

  The present invention has been made in consideration of the above-described circumstances. In particular, the present invention intends to provide a semiconductor manufacturing apparatus and a semiconductor device manufacturing method that realize substrate temperature control that is more suitable for a multi-chamber process and that can shorten the time. To do.

  A semiconductor manufacturing apparatus according to the present invention includes a plurality of processing chambers that allow substrates related to semiconductor device manufacturing to enter and exit, and a mounting table that transmits a predetermined temperature to the substrate, and switches between a vacuum exhausted state and a high atmospheric pressure state. And a dedicated processing chamber.

According to the semiconductor manufacturing apparatus of the present invention, the dedicated processing chamber can be switched between a state of being evacuated and a state of high atmospheric pressure. If these two states are switched in a short time, an unbalanced pressure is generated on the front and back of the substrate on the mounting table, and the substrate can be pressed against the mounting table that transmits temperature. The temperature control of the substrate becomes faster, the processing in another processing chamber or the movement to the outside is efficient, and the waiting time for setting the target temperature can be shortened.
In order to achieve more preferable temperature transmission to the substrate, the mounting table has a substantially horizontal surface in which a temperature adjusting medium is circulated. Alternatively, the mounting table has a substantially horizontal surface that is irradiated from the outside with a temperature adjusting lamp.

  A semiconductor manufacturing apparatus according to the present invention includes a plurality of processing chambers related to semiconductor device manufacturing, a mounting table that is adjacent to one or more of the processing chambers, contacts a back surface of the substrate, and transmits a predetermined temperature, and is evacuated. Temperature control chamber capable of switching between a state of being heated and a state of high atmospheric pressure, a storage chamber for storing a plurality of the substrates, and at least the substrate between the storage chamber, the plurality of processing chambers, and the temperature control chamber And a transport mechanism responsible for transporting.

  A semiconductor manufacturing apparatus according to the present invention includes a plurality of processing chambers related to semiconductor device manufacturing, a mounting table that is adjacent to one or more of the processing chambers, contacts a back surface of the substrate, and transmits a predetermined temperature, and is evacuated. First and second temperature control chambers capable of switching between a state of being carried out and a state of high atmospheric pressure, a storage chamber for storing a plurality of the substrates, at least the storage chamber, the plurality of processing chambers, and the first, And a transport mechanism for transporting the substrate between the second temperature control chambers.

  According to each of the semiconductor manufacturing apparatuses according to the present invention, the temperature control chamber can be switched between a state of being evacuated and a state of high atmospheric pressure. If these two states are switched in a short time, an unbalanced pressure is generated on the front and back of the substrate on the mounting table, and the substrate can be pressed against the mounting table that transmits temperature. The substrate temperature can be quickly controlled, the processing in another processing chamber or the movement to the outside through the storage chamber can be efficiently performed, and the waiting time for setting the target temperature can be shortened. In addition, if the first and second temperature control chambers are provided, control of different temperatures, particularly conflicting temperatures, can be managed in parallel.

  In each of the semiconductor manufacturing apparatuses according to the present invention, the storage chamber is provided with a heat-resistant cassette that can be stored for each substrate. That is, the use of the temperature control room can eliminate the need for heat resistance in the storage room, which contributes to cost reduction.

  In the semiconductor device manufacturing method according to the present invention, when the substrate related to semiconductor device manufacturing achieves a target process in each of the plurality of processing chambers, among the plurality of processing chambers, before or after the processing in a predetermined processing chamber, The temperature of the substrate is controlled in a dedicated processing chamber.

  According to the semiconductor device manufacturing method of the present invention, the temperature control of the substrate is performed by performing temperature control in the dedicated processing chamber before or after the substrate related to semiconductor device manufacturing is processed in the predetermined processing chamber. Becomes faster. Therefore, the processing in another processing chamber or the movement to the outside is also efficient, and the waiting time for setting the target temperature can be shortened.

In the method of manufacturing a semiconductor device according to the present invention, a preferable operation in a dedicated processing chamber has the following characteristics.
The dedicated processing chamber is evacuated, the substrate is placed on a mounting table that contacts the back surface of the substrate and transmits a predetermined temperature, and is filled with an inert gas in a short time after the evacuation is stopped. Then, an unbalanced pressure is generated on the front surface and the back surface of the substrate to create a state in which the substrate is pressed against the mounting table.

In the method for manufacturing a semiconductor device according to the present invention, a preferable operation in a dedicated processing chamber has the following characteristics.
In the dedicated processing chamber, evacuating the dedicated processing chamber, placing the substrate on a mounting table that transmits a predetermined temperature, filling the inert gas after stopping the evacuation, A step of evacuating the dedicated processing chamber again after a predetermined time, and a step of transferring the substrate from the dedicated processing chamber to another vacuum chamber.

BEST MODE FOR CARRYING OUT THE INVENTION

  FIG. 1 is a block diagram showing the main part of the semiconductor manufacturing apparatus according to the first embodiment of the present invention. The semiconductor manufacturing apparatus 11 has a multi-process chamber specification. A load lock chamber LLI, LLO for loading / unloading a substrate WF and a plurality of processing chambers PC, PC,... Are arranged around the transfer chamber 12 where the vacuum robot RB is arranged. The processing chamber PC may be a plasma processing chamber for performing etching, sputtering, CVD (chemical vapor deposition) film formation, or the like. A group of these processing chambers PC and a processing chamber (temperature control chamber) 13 dedicated to temperature control are provided side by side. The temperature control chamber 13 is provided adjacent to at least one of the processing chambers.

  The temperature control chamber 13 includes a substrate mounting table 131 that transmits a predetermined temperature to the substrate. The temperature control chamber 13 can switch between a high vacuum state in which evacuation is performed and a state in which an inert gas is introduced and the pressure is high in a short cycle of approximately several seconds. Such a pressure operation of the temperature control chamber 13 is possible within a performance range of a pump (not shown) used in the processing chamber PC.

  The temperature control chamber 13 generates an unbalanced pressure on both sides of the substrate by switching from a high vacuum state to a high atmospheric pressure state with respect to the substrate WF mounted on the mounting table 131. As a result, the substrate WF is pressed against the mounting table 131 that transmits the temperature, prompt heat exchange occurs, and substrate temperature control is completed quickly.

  FIG. 2 is a configuration diagram illustrating a main part of an example of the temperature control chamber 13. The control chamber main body may be configured in accordance with other processing chamber PCs without any particular limitation. Although not shown, a shutter for sealing and opening the temperature control chamber 13 is provided. The mounting table 131 in the temperature control chamber 13 has a main body made of a material having high thermal conductivity such as ceramic or metal. This may be substantially the same as the other processing chamber PC.

  The mounting table 131 is provided with a circulation path VC for a temperature adjusting medium. The cooling medium is cooling water or cooling gas, and the heating medium is heating gas. Thereby, the temperature control chamber 13 functions as a cooling chamber or a heating chamber. Although not shown, there may be two types of circulation path VC for the cooling medium and for the heating medium. The mounting table 131 has a substantially horizontal surface in order to improve the degree of adhesion with the substrate WF. An insulating material such as aluminum oxide may be coated on the surface. A push-up pin that pushes up the substrate WF is omitted here. Depending on the configuration of the vacuum robot RB, the push-up pin may not be necessary.

  The temperature control chamber 13 is provided with an inert gas supply port 132 and an exhaust port 133. For example, Ar may be used as the inert gas. This also follows the use of inert gas in the process chamber PC. The exhaust port 133 is connected to a pump for vacuum exhaust. The valve 134 controls gas inflow from the supply port 132, and the valve 135 controls vacuum exhaust of the exhaust port 133.

FIGS. 3 and 4 are configuration diagrams showing the main part of another example of the temperature control chamber 13. Only the parts different from FIG. 2 will be described.
In FIG. 3, the inside of the mounting table 131 is additionally provided with a heating wire EH for temperature adjustment. That is, a heating medium called current (electrons) passing through the heating wire EH is used.
In FIG. 4, a configuration is added in which the mounting table 131 is externally irradiated with a temperature adjusting lamp LP and heated.

That is, in FIG. 3, when the temperature control chamber 13 is used as a cooling chamber, the circulation path VC for circulating the cooling medium is caused to function. When the temperature control chamber 13 is used as a heating chamber, the heating wire EH is caused to function.
In FIG. 4, when the temperature control chamber 13 is used as a cooling chamber, the circulation path VC for circulating the cooling medium is caused to function. When the temperature control chamber 13 is used as a heating chamber, the lamp LP is caused to function.
3 and 4 may be provided independently. That is, it is conceivable that only the heating wire EH or the lamp LP is provided to function as the temperature control chamber 13 dedicated to heating.

FIG. 5 is a characteristic diagram showing changes in the atmospheric pressure state of the temperature control chamber and changes in the substrate temperature. With reference to this figure, FIG. 1, and FIG. 2, the manufacturing method of the semiconductor device which concerns on 2nd Embodiment of this invention is demonstrated.
A semiconductor substrate (hereinafter referred to as a wafer) WF to be processed achieves a target process (for example, etching or the like) in a predetermined processing chamber PC from the load lock chamber LLI through the transfer chamber 12. At that time, the temperature of the wafer WF is controlled in the temperature control chamber 13 before or after the processing in the predetermined processing chamber PC.

  The wafer WF uses the temperature control chamber 13 at the following times. First, when the wafer WF requires temperature control before the first process chamber PC process. Second, when temperature control is required between the processing chamber PCs. Third, when the wafer WF completes all of the target processing in each processing chamber PC, and temperature control (mainly cooling) of the wafer WF is required before entering the load lock chamber LLO. That is, the wafer WF is transferred to the temperature control chamber 13 via the transfer chamber 12 as necessary.

  The temperature control chamber 13 is in an evacuated state, and the wafer WF is placed on the mounting table 131. At this time, the mounting table 131 allows the temperature adjusting medium circulation path VC to function in order to reach the intended temperature. Next, after the valve 135 is closed and evacuation is stopped, the valve 134 is opened, and an inert gas (for example, Ar) is allowed to flow into the temperature control chamber 13 instantaneously. Thereby, the atmospheric pressure in the temperature control chamber 13 is set to several hundred to several kPa within about 5 seconds. Thereby, in the temperature control chamber 13, an unbalanced pressure is generated between the front surface and the back surface of the wafer WF, and the back surface of the wafer WF is vacuum-sucked to the mounting table 131. The wafer WF is pressed against the mounting table 131, and heat exchange with the mounting table 131 is quickly performed. As a result, the wafer WF approaches the temperature set in a few seconds. Incidentally, the wafer WF of about 200 ° C. to 400 ° C. can be cooled to room temperature within 5 seconds.

  After the wafer WF has sufficiently approached the target temperature, the temperature control chamber 13 is evacuated again with the valve 134 closed and the valve 135 opened. As a result, the temperature control chamber 13 reproduces a vacuum state that is not different from that of the transfer chamber 12, and a shutter (not shown) is opened to connect to the transfer chamber 12. Such a temperature control operation can be performed in a short cycle within a few seconds with the pumping capacity associated with the current semiconductor manufacturing apparatus 11. The temperature-controlled wafer WF is transferred to another processing chamber PC or load lock chamber LLO by the vacuum robot RB in accordance with the subsequent processing.

  According to the configuration and method according to each of the above embodiments, the temperature control chamber 13 and the group of the plurality of processing chambers PC related to the multi-process chamber specification semiconductor manufacturing apparatus are provided. The temperature control chamber 13 is a dedicated processing chamber that can be switched between a state of being evacuated and a state of high atmospheric pressure. Of course, the temperature control chamber 13 is not limited to the configuration shown in FIG. If the temperature control chamber 13 is switched from a vacuum to a high atmospheric pressure in a short time, an unbalanced pressure is generated on the front and back of the substrate (wafer) WF mounted on the mounting table 131. Thereby, a board | substrate can be pressed against the mounting base 131 which transmits temperature. Before or after the substrate WF relating to semiconductor device manufacture is processed in a predetermined processing chamber, temperature control is performed in the temperature control chamber 13. Thereby, the temperature control of the substrate WF is accelerated, the processing in the other processing chamber PC or the movement to the outside is smooth, and the waiting time for setting the target temperature can be shortened.

  Some load lock chambers LLO are provided with cassettes that can accommodate substrates. At that time, the substrate WF being transferred is controlled to room temperature by using the temperature control chamber 13. Thereby, it is not necessary to use an expensive heat-resistant cassette, which contributes to cost reduction. Further, the temperature control chamber 13 can be deployed with almost no modification to the current configuration of the processing chamber PC, and is economical.

  FIG. 6 is a block diagram showing a main part of a semiconductor manufacturing apparatus according to the third embodiment of the present invention. The same parts as those in the first embodiment will be described with the same reference numerals. The semiconductor manufacturing apparatus 21 has a multi-process chamber specification as in the first embodiment. A load lock chamber LLI, LLO for loading / unloading a substrate WF and a plurality of processing chambers PC, PC,... Are arranged around the transfer chamber 12 where the vacuum robot RB is arranged. In these groups of processing chambers PC, processing chambers (temperature control chambers) 13C and 13H dedicated to temperature control are provided.

  Regarding the temperature control chambers 13 </ b> C and 13 </ b> H, any one of the configurations illustrated in FIGS. 2 to 4 may be provided as in the first embodiment. The temperature control chambers 13 </ b> C and 13 </ b> H may be configured to be able to control different temperatures, particularly conflicting temperatures (for example, cooling and heating). Moreover, you may make it manage the same temperature. In short, consideration is given to the temperature control of the substrate to be processed more efficiently than the multi-process chamber specification.

  As described above, according to the present invention, a plurality of processing chamber groups related to semiconductor device manufacturing and a temperature control chamber that switches between two states of being evacuated and a state of high atmospheric pressure in a short time are provided. The temperature control chamber generates an unbalanced pressure on the front and back sides of the substrate by manipulating atmospheric pressure, and presses the substrate against a mounting table that transmits the temperature. Thereby, quick heat exchange occurs and efficient temperature control is achieved. Such temperature control of the substrate is performed either before or after the processing in the processing chamber related to semiconductor device manufacturing. As a result, the substrate to be processed can reduce the waiting time for setting the target temperature, and can be efficiently processed in another processing chamber or moved to the outside. Moreover, such a temperature control room can be deployed with almost no modification of the current configuration of the processing chamber, and is economical. As a result, it is possible to provide a semiconductor manufacturing apparatus and a semiconductor device manufacturing method that realize substrate temperature control that is more suitable for a multi-chamber process and that can shorten the time.

The block diagram which shows the principal part of the semiconductor manufacturing apparatus which concerns on 1st Embodiment. The block diagram which shows the principal part about an example of the temperature control chamber in FIG. The 1st block diagram which shows the principal part about the other example of the temperature control chamber in FIG. The 2nd block diagram which shows the principal part about the other example of the temperature control chamber in FIG. The characteristic view which shows the change of the atmospheric | air pressure of the temperature control room which concerns on 2nd Embodiment, and board | substrate temperature. The block diagram which shows the principal part of the semiconductor manufacturing apparatus which concerns on 3rd Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 11, 21 ... Semiconductor manufacturing apparatus, 12 ... Transfer chamber, 13, 13C, 13H ... Temperature control chamber, 131 ... Mounting table, 132 ... Inert gas supply port, 133 ... Exhaust port, 134, 135 ... Valve, PC ... Processing chamber, LLI, LLO ... load lock chamber, RB ... vacuum robot, WF ... semiconductor substrate (wafer), VC ... circulation path of medium for temperature adjustment, EH ... heating wire, LP ... lamp.

Claims (9)

A plurality of processing chambers for entering and exiting substrates relating to semiconductor device manufacturing;
Provided with a mounting table for transmitting a predetermined temperature to the substrate, a dedicated processing chamber for switching between a state of being evacuated and a state of high atmospheric pressure,
A semiconductor manufacturing apparatus including: The semiconductor manufacturing apparatus according to claim 1, wherein the mounting table has a substantially horizontal surface through which a temperature adjusting medium is circulated. The semiconductor manufacturing apparatus according to claim 1, wherein the mounting table has a substantially horizontal surface that is irradiated from the outside with a temperature adjusting lamp. A plurality of processing chambers for semiconductor device manufacturing;
A temperature control chamber that is adjacent to one or more of the processing chambers, has a mounting table that contacts a back surface of the substrate and transmits a predetermined temperature, and is capable of switching between a vacuum exhausted state and a high atmospheric pressure state;
A storage chamber for storing a plurality of the substrates;
A transport mechanism for transporting the substrate between at least the storage chamber, the plurality of processing chambers, and the temperature control chamber;
A semiconductor manufacturing apparatus including: A plurality of processing chambers for semiconductor device manufacturing;
A first and a second that are adjacent to one or more of the processing chambers, have a mounting table that contacts the back surface of the substrate and transmits a predetermined temperature, and can be switched between a vacuum exhausted state and a high atmospheric pressure state. A temperature control room,
A storage chamber for storing a plurality of the substrates;
A transport mechanism responsible for transporting the substrate between at least the storage chamber, the plurality of processing chambers, and the first and second temperature control chambers;
A semiconductor manufacturing apparatus including: 6. The semiconductor manufacturing apparatus according to claim 4, wherein a heat-resistant unnecessary cassette capable of accommodating each substrate is provided in the storage chamber. When a substrate related to semiconductor device manufacturing achieves a target process in a plurality of processing chambers, temperature control of the substrate is performed in a dedicated processing chamber before or after processing in a predetermined processing chamber among the plurality of processing chambers. A method for manufacturing a semiconductor device. The dedicated processing chamber is evacuated, the substrate is placed on a mounting table that contacts the back surface of the substrate and transmits a predetermined temperature, and is filled with an inert gas in a short time after the evacuation is stopped. The method of manufacturing a semiconductor device according to claim 7, wherein an unbalanced pressure is generated on the front surface and the back surface of the substrate to create a state of pressing the substrate against the mounting table. In the dedicated processing chamber,
Evacuating the dedicated processing chamber;
Placing the substrate on a mounting table that transmits a predetermined temperature;
Filling the inert gas after stopping the evacuation;
A step of evacuating the dedicated processing chamber again after a predetermined time;
Transferring the substrate from the dedicated processing chamber to another vacuum chamber;
A method for manufacturing a semiconductor device according to claim 7.

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