JP2005166892A - Stack type small-sized memory card - Google Patents

Stack type small-sized memory card Download PDF

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JP2005166892A
JP2005166892A JP2003402831A JP2003402831A JP2005166892A JP 2005166892 A JP2005166892 A JP 2005166892A JP 2003402831 A JP2003402831 A JP 2003402831A JP 2003402831 A JP2003402831 A JP 2003402831A JP 2005166892 A JP2005166892 A JP 2005166892A
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memory card
substrate
heat sink
contacts
stack type
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Jr-Hung Shie
志鴻 謝
Shisei Go
志成 呉
Rung-Ting Chen
榕庭 陳
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Kingpak Technology Inc
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Kingpak Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a stacking small-sized memory card increasing its reliability and use-life and being convenient for its manufacture. <P>SOLUTION: The stack type small-sized memory card has an upper-layer memory card and a lower-layer memory card. A first heatsink and a second heatsink are formed to the upper-layer memory card and the lower-layer memory card, respectively. The first heatsink and the second heatsink are superposed mutually. The stack type small-sized memory card is formed so that the amount of heat of the upper-layer memory card and that of the lower-layer memory card are dissipated from the first heatsink and the second headsink, respectively. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は一種のスタック型小型メモリカードに係り、特に、高い放熱機能を具えてその信頼度と使用寿命が増されたスタック型小型メモリカードに関する。   The present invention relates to a kind of stack type small memory card, and more particularly to a stack type small memory card having a high heat radiation function and having an increased reliability and service life.

周知のメモリカードの製造方法は、一般に、先ずチップをパッケージして単一集積回路を形成し、その後、表面実装技術（ＳＭＴ）により、集積回路をプリント基板上にはんだ付けしてなり、集積回路はメモリ、例えばフラッシュメモリ等のアクティブ素子とされる。プリント基板にはコンピュータに保留されたスロットに挿入するためのゴールドフィンガーがあるほか、コンデンサ、インダクタ、抵抗等のパッシブ素子がありうる。   A known memory card manufacturing method generally involves first packaging a chip to form a single integrated circuit, and then soldering the integrated circuit onto a printed circuit board by surface mount technology (SMT). Is an active element such as a memory, for example, a flash memory. The printed circuit board may have a gold finger for insertion into a slot reserved in the computer, or a passive element such as a capacitor, an inductor, or a resistor.

図１は周知のメモリカードの側面図である。ゴールドフィンガー１５はコンピュータのスロットに挿入される。モジュールカードにはアクティブ素子とパッシブ素子（図示せず）があり、アクティブ素子は通常パッケージされて集積回路１１とされ、集積回路１１内部にチップ１２がパッケージされ、このチップ１２はメモリチップ、例えばフラッシュメモリでありうる。集積回路１１のピン１３は、表面実装技術によりメモリカードの回路基板１４にはんだ付けされ、回路基板１４にはピン１３との接続に供されるソルダポイント１７が設けられている。   FIG. 1 is a side view of a known memory card. Gold finger 15 is inserted into the slot of the computer. The module card includes an active element and a passive element (not shown). The active element is usually packaged to form an integrated circuit 11, and a chip 12 is packaged inside the integrated circuit 11. The chip 12 is a memory chip, for example, a flash memory. Can be memory. The pins 13 of the integrated circuit 11 are soldered to the circuit board 14 of the memory card by surface mounting technology, and the circuit board 14 is provided with solder points 17 for connection to the pins 13.

周知の方法には以下のような欠点がある。
１．先ずチップ１２をパッケージしてから回路基板１４にはんだ付けするため、工程が煩瑣であり、この方法によると、パッケージと製造コストが増す。
２．一般にメモリカードの集積回路は通常一つだけではなく、数個がある場合があり、このため、モジュールカードを製作する時、一つずつ集積回路１１を回路基板１４にはんだ付けしなければならない。
３．表面実装技術（ＳＭＴ）を利用して回路基板１４にはんだ付けするコストは高く、更に炉に入れなければならず、ＳＭＴの設備コストが多くかかる。
４．メモリカードは一つずつ製造され、バッチ製造されず、ゆえに生産効率が低い。
５．集積回路１１の有効な放熱が行なえず、このため信頼度と使用寿命に影響が生じる。 The known method has the following drawbacks.
1. Since the chip 12 is first packaged and then soldered to the circuit board 14, the process is cumbersome, and this method increases the packaging and manufacturing costs.
2. In general, there are usually not only one integrated circuit of a memory card, but there may be several integrated circuits. Therefore, when manufacturing a module card, the integrated circuits 11 must be soldered to the circuit board 14 one by one.
3. The cost of soldering to the circuit board 14 using surface mounting technology (SMT) is high, and it must be put in a furnace, which increases the equipment cost of SMT.
4). Memory cards are manufactured one by one, not batch-produced, and therefore the production efficiency is low.
5). The integrated circuit 11 cannot effectively dissipate heat, which affects the reliability and service life.

以上を鑑み、本発明は製造上、従来の技術よりも便利で、且つ信頼度と使用寿命を効果的に高めることのできるスタック型小型メモリカードの構造を提供するものである。   In view of the above, the present invention provides a structure of a stack type small memory card that is more convenient in manufacturing than conventional techniques and can effectively increase reliability and service life.

本発明の主要な目的は、一種のスタック型小型メモリカードを提供することにあり、それは、製造に便利な効果を有して、生産コストを下げるのに有効であるものとする。   The main object of the present invention is to provide a kind of stack type small memory card, which has an advantageous effect in manufacturing and is effective in reducing the production cost.

本発明の次の目的は、一種のスタック型小型メモリカードを提供することにあり、それは、放熱効果を高める機能を具え、その信頼度と使用寿命の延長を達成するものとする。   The next object of the present invention is to provide a kind of stack type small memory card, which has a function of enhancing the heat dissipation effect, and achieves its reliability and extended service life.

請求項１の発明は、上層メモリカードと下層メモリカードを具え、
該上層メモリカードは第１基板、少なくとも一つのメモリチップ、第１ヒートシンク、及び第１封止樹脂層を具え、該第１基板は上表面と下表面を具え、該上表面に複数の接点、該接点に電気的に接続された複数のゴールドフィンガー、及び該上表面から該下表面に貫通する複数の貫通孔を具え、該貫通孔内に金属が充填され、該メモリチップは第１基板の上表面に設けられ、並びに第１基板の接点に電気的に接続され、該第１ヒートシンクは第１基板の下表面に設けられ、並びに該貫通孔内の金属と接触し、該第１封止樹脂層は該メモリチップを被覆し、該上層メモリカードは電子装置内に取り付けられ、該第１基板のゴールドフィンガーが該電子装置と接続され、
該下層メモリカードは、第２基板、少なくとも一つのメモリチップ、第２ヒートシンク及び第２封止樹脂層を具え、該第２基板に上表面と下表面が設けられ、第２基板の下表面に複数の接点、該接点と電気的に接続された複数のゴールドフィンガー、及び該第２基板の上表面から下表面に貫通する貫通孔が設けられ、該第２基板の貫通孔内に金属が充填され、該第２ヒートシンクは第２基板の上表面に設置され、並びに第２基板の貫通孔内の金属と接触し、該第２封止樹脂層は該下層メモリカードのメモリチップを被覆し、該下層メモリカードは電子装置内に取り付けられて第２基板のゴールドフィンガーを電子装置と電気的に接続させ、
該上層メモリカードの第１ヒートシンクが該下層メモリカードの第２ヒートシンクに重ねて設けられたことを特徴とする、スタック型小型メモリカードとしている。
請求項２の発明は、請求項１記載のスタック型小型メモリカードにおいて、上層メモリカードのメモリチップが複数の導線で第１基板の複数の接点に電気的に接続されたことを特徴とする、スタック型小型メモリカードとしている。
請求項３の発明は、請求項１記載のスタック型小型メモリカードにおいて、第１基板の複数の貫通孔内の金属、及び、第２基板の複数の貫通孔内の金属が銅とされたことを特徴とする、スタック型小型メモリカードとしている。
請求項４の発明は、請求項１記載のスタック型小型メモリカードにおいて、下層メモリカードのメモリチップが複数の導線で第２基板の複数の接点に電気的に接続されたことを特徴とする、スタック型小型メモリカードとしている。 The invention of claim 1 comprises an upper layer memory card and a lower layer memory card,
The upper layer memory card includes a first substrate, at least one memory chip, a first heat sink, and a first sealing resin layer, the first substrate includes an upper surface and a lower surface, and a plurality of contacts on the upper surface, A plurality of gold fingers electrically connected to the contact; and a plurality of through holes penetrating from the upper surface to the lower surface, the metal being filled in the through holes, and the memory chip is formed on the first substrate. Provided on the upper surface and electrically connected to the contact of the first substrate, the first heat sink is provided on the lower surface of the first substrate and contacts the metal in the through hole, and the first sealing The resin layer covers the memory chip, the upper memory card is mounted in the electronic device, and the gold finger of the first substrate is connected to the electronic device,
The lower-layer memory card includes a second substrate, at least one memory chip, a second heat sink, and a second sealing resin layer. The upper surface and the lower surface are provided on the second substrate, and the lower surface of the second substrate is provided. A plurality of contacts, a plurality of gold fingers electrically connected to the contacts, and a through hole penetrating from the upper surface to the lower surface of the second substrate are provided, and the metal is filled in the through hole of the second substrate The second heat sink is disposed on the upper surface of the second substrate, and contacts the metal in the through hole of the second substrate, the second sealing resin layer covers the memory chip of the lower memory card, The lower layer memory card is mounted in the electronic device to electrically connect the gold finger of the second substrate to the electronic device,
A stack type small memory card is characterized in that the first heat sink of the upper layer memory card is provided so as to overlap the second heat sink of the lower layer memory card.
According to a second aspect of the present invention, in the stack type small memory card according to the first aspect, the memory chip of the upper-layer memory card is electrically connected to a plurality of contacts of the first substrate by a plurality of conductive wires. It is a stack type small memory card.
According to a third aspect of the present invention, in the stack type small memory card according to the first aspect, the metal in the plurality of through holes of the first substrate and the metal in the plurality of through holes of the second substrate are made of copper. This is a stack type small memory card.
According to a fourth aspect of the present invention, in the stack type small memory card according to the first aspect, the memory chip of the lower layer memory card is electrically connected to a plurality of contacts of the second substrate by a plurality of conductive wires. It is a stack type small memory card.

本発明のスタック型小型メモリカードは、上層メモリカードと下層メモリカードを具え、上層メモリカードと下層メモリカードにそれぞれ第１ヒートシンクと第２ヒートシンクが形成され、第１ヒートシンク及び第２ヒートシンクが相互に重ねられ、上層メモリカードの熱量及び下層メモリカードの熱量がそれぞれ第１ヒートシンクと第２ヒートシンクより放出されるよう形成され、これにより本発明は、メモリカードの信頼度と使用寿命を増し、且つ製造に便利とされている。   The stack type small memory card of the present invention comprises an upper layer memory card and a lower layer memory card, and a first heat sink and a second heat sink are formed on the upper layer memory card and the lower layer memory card, respectively. The heat amount of the upper layer memory card and the heat amount of the lower layer memory card are formed so as to be released from the first heat sink and the second heat sink, respectively, thereby increasing the reliability and service life of the memory card and manufacturing the memory card. It is considered convenient.

本発明は上層メモリカードと下層メモリカードを具え、該上層メモリカードは第１基板、少なくとも一つのメモリチップ、第１ヒートシンク、及び第１封止樹脂層を具えている。該第１基板は上表面と下表面を具え、該上表面に複数の接点、該接点に電気的に接続された複数のゴールドフィンガー、及び該上表面から該下表面に貫通する複数の貫通孔を具え、該貫通孔内に金属が充填され、該メモリチップは第１基板の上表面に設けられ、並びに第１基板の接点に電気的に接続され、該第１ヒートシンクは第１基板の下表面に設けられ、並びに該貫通孔内の金属と接触し、該第１封止樹脂層は該メモリチップを被覆し、該上層メモリカードは電子装置内に取り付けられ、該第１基板のゴールドフィンガーが該電子装置と接続される。下層メモリカードは、第２基板、少なくとも一つのメモリチップ、第２ヒートシンク及び第２封止樹脂層を具えている。該第２基板に上表面と下表面が設けられ、第２基板の下表面に複数の接点、該接点と電気的に接続された複数のゴールドフィンガー、及び該第２基板の上表面から下表面に貫通する貫通孔が設けられ、該第２基板の貫通孔内に金属が充填され、該第２ヒートシンクは第２基板の上表面に設置され、並びに該貫通孔内の金属と接触し、該第２封止樹脂層は該下層メモリカードのメモリチップを被覆し、該下層メモリカードは電子装置内に取り付けられて第２基板のゴールドフィンガーを電子装置と電気的に接続させ、該上層メモリカードの第１ヒートシンクが該下層メモリカードの第２ヒートシンクに重ねて設けられる。   The present invention includes an upper layer memory card and a lower layer memory card, and the upper layer memory card includes a first substrate, at least one memory chip, a first heat sink, and a first sealing resin layer. The first substrate has an upper surface and a lower surface, a plurality of contacts on the upper surface, a plurality of gold fingers electrically connected to the contacts, and a plurality of through holes penetrating from the upper surface to the lower surface And the through-hole is filled with metal, the memory chip is provided on the upper surface of the first substrate, and is electrically connected to the contact of the first substrate, and the first heat sink is under the first substrate. The first sealing resin layer covers the memory chip, and the upper memory card is mounted in the electronic device, and is provided on the surface and in contact with the metal in the through hole. Is connected to the electronic device. The lower-layer memory card includes a second substrate, at least one memory chip, a second heat sink, and a second sealing resin layer. An upper surface and a lower surface are provided on the second substrate, a plurality of contacts on the lower surface of the second substrate, a plurality of gold fingers electrically connected to the contacts, and an upper surface to a lower surface of the second substrate A through-hole penetrating through the second substrate is filled with metal, the second heat sink is disposed on the upper surface of the second substrate, and is in contact with the metal in the through-hole, The second sealing resin layer covers the memory chip of the lower layer memory card, and the lower layer memory card is mounted in the electronic device to electrically connect the gold finger of the second substrate to the electronic device. The first heat sink is provided so as to overlap the second heat sink of the lower layer memory card.

該上層メモリカードのメモリチップと下層メモリカードのメモリチップの熱量はそれぞれの貫通孔内の金属を介して第１ヒートシンク及び第２ヒートシンクに伝えられ、これらヒートシンクにより放出され、こうして本発明の目的と効果が達成される。   The amount of heat of the memory chip of the upper-layer memory card and the memory chip of the lower-layer memory card is transmitted to the first heat sink and the second heat sink through the metal in the respective through holes, and is discharged by these heat sinks. The effect is achieved.

図２、３を参照されたい。本発明のスタック型小型メモリカードは、上層メモリカード２０と下層メモリカード２２を具えている。   See FIGS. The stack type small memory card of the present invention includes an upper layer memory card 20 and a lower layer memory card 22.

該上層メモリカード２０は第１基板２４、少なくとも一つのメモリチップ２６、第１ヒートシンク２８及び第１封止樹脂層３０を具えている。該第１基板２４に上表面３２と下表面３４が設けられ、上表面３２に複数の接点３６、該接点３６に電気的に接続された複数のゴールドフィンガー３８、及び該上表面３２から下表面３４に貫通する貫通孔４０が設けられ、該貫通孔４０内に金属４２が充填され、該金属４２は銅とされる。メモリチップ２６は第１基板２４の上表面３２に設けられ、並びに複数の導線４４で電気的に第１基板２４の接点３６に接続され、第１ヒートシンク２８は銅或いはアルミ片とされて第１基板２４の下表面３４に設けられ、並びに貫通孔４０内の金属４２と接触し、第１封止樹脂層３０は該メモリチップ２６を被覆する。該上層メモリカード２０は電子装置（図示せず）内に取り付けられ、該第１基板２４のゴールドフィンガー３８が電子装置と電気的に接続される。   The upper memory card 20 includes a first substrate 24, at least one memory chip 26, a first heat sink 28, and a first sealing resin layer 30. The first substrate 24 is provided with an upper surface 32 and a lower surface 34. The upper surface 32 has a plurality of contacts 36, a plurality of gold fingers 38 electrically connected to the contacts 36, and the upper surface 32 to the lower surface. A through hole 40 penetrating through 34 is provided, and the metal 42 is filled in the through hole 40, and the metal 42 is made of copper. The memory chip 26 is provided on the upper surface 32 of the first substrate 24, and is electrically connected to the contacts 36 of the first substrate 24 by a plurality of conductive wires 44, and the first heat sink 28 is made of copper or aluminum and is first. The first sealing resin layer 30 covers the memory chip 26 provided on the lower surface 34 of the substrate 24 and in contact with the metal 42 in the through hole 40. The upper memory card 20 is mounted in an electronic device (not shown), and the gold fingers 38 of the first substrate 24 are electrically connected to the electronic device.

下層メモリカード２２は、第２基板４６、少なくとも一つのメモリチップ４８、第２ヒートシンク５０及び第２封止樹脂層５２を具えている。該第２基板４６に上表面５４と下表面５６が設けられ、下表面５６に複数の接点５８、該接点５８に電気的に接続された複数のゴールドフィンガー６０、及び該上表面５４から下表面５６に貫通する貫通孔６２が設けられ、該貫通孔６２内に金属６４が充填される。メモリチップ４８は第２基板４６の下表面５６に設けられ、並びに複数の導線６６で電気的に第２基板４６の接点５８に接続さ、第２ヒートシンク５０は銅或いはアルミ片とされて第２基板４６の上表面５４に設けられ、並びに貫通孔６２内の金属６４と接触し、第２封止樹脂層５２は該メモリチップ４８を被覆する。該下層メモリカード２２は電子装置（図示せず）内に取り付けられ、該第２基板４６のゴールドフィンガー６０が電子装置と電気的に接続される。上層メモリカード２０の第１ヒートシンク２８が下層メモリカード２２の第２ヒートシンク５０の上に重ねて設けられる。   The lower layer memory card 22 includes a second substrate 46, at least one memory chip 48, a second heat sink 50, and a second sealing resin layer 52. The second substrate 46 is provided with an upper surface 54 and a lower surface 56. The lower surface 56 has a plurality of contacts 58, a plurality of gold fingers 60 electrically connected to the contacts 58, and the upper surface 54 to the lower surface. A through hole 62 penetrating 56 is provided, and the metal 64 is filled in the through hole 62. The memory chip 48 is provided on the lower surface 56 of the second substrate 46, and is electrically connected to the contacts 58 of the second substrate 46 by a plurality of conductors 66, and the second heat sink 50 is formed as a second piece of copper or aluminum. The second sealing resin layer 52 is provided on the upper surface 54 of the substrate 46 and is in contact with the metal 64 in the through hole 62 so as to cover the memory chip 48. The lower layer memory card 22 is mounted in an electronic device (not shown), and the gold finger 60 of the second substrate 46 is electrically connected to the electronic device. The first heat sink 28 of the upper layer memory card 20 is provided so as to overlap the second heat sink 50 of the lower layer memory card 22.

本発明は以下のような優れた点を有している。
１．上層メモリカード２０のメモリチップ２６の熱量が第１基板２４の貫通孔４０内の金属４２より第１ヒートシンク２８に伝えられ、該熱量が急速に第１ヒートシンク２８より放出され、下層メモリカード２２のメモリチップ４８の熱量は第２基板４６の貫通孔６２内の金属を介して第２ヒートシンク５０に伝えられて放出され、これによりメモリカードの信頼度とメモリチップの使用寿命が増され、メモリカードの使用期限が延長される。
２．上層メモリカード２０のメモリチップ２６は先に第１基板２４の上表面３２に設置され、下層メモリカード２２のメモリチップ４８が先に第２基板４６の下表面５６の上に設置され、さらに第１封止樹脂層３０と第２封止樹脂層５２で各メモリチップ２６及び４８が封止され、こうして製造上、便利とされ、有効に生産コストを下げられる。 The present invention has the following excellent points.
1. The amount of heat of the memory chip 26 of the upper layer memory card 20 is transmitted to the first heat sink 28 from the metal 42 in the through hole 40 of the first substrate 24, and the amount of heat is rapidly released from the first heat sink 28, The amount of heat of the memory chip 48 is transferred to the second heat sink 50 through the metal in the through hole 62 of the second substrate 46 and released, thereby increasing the reliability of the memory card and the service life of the memory chip. The expiration date of is extended.
2. The memory chip 26 of the upper layer memory card 20 is first installed on the upper surface 32 of the first substrate 24, the memory chip 48 of the lower layer memory card 22 is first installed on the lower surface 56 of the second substrate 46, and the first The memory chips 26 and 48 are sealed with the first sealing resin layer 30 and the second sealing resin layer 52, which is convenient in manufacturing and can effectively reduce the production cost.

以上の実施例は本発明の実施範囲を限定するものではなく、本発明に基づきなしうる細部の修飾或いは改変は、いずれも本発明の請求範囲に属するものとする。   The above embodiments do not limit the scope of the present invention, and any modification or alteration of details that can be made based on the present invention shall fall within the scope of the claims of the present invention.

周知のメモリカードの側面図である。It is a side view of a known memory card. 本発明のスタック型小型メモリカードの第１表示図である。1 is a first display diagram of a stack type small memory card of the present invention. FIG. 本発明のスタック型小型メモリカードの第２表示図である。It is a 2nd display figure of the stack type small memory card of this invention.

符号の説明Explanation of symbols

２０ 上層メモリカード ２２ 下層メモリカード
２４ 第１基板 ２６ メモリチップ
２８ 第１ヒートシンク ３０ 第１封止樹脂層
３２ 上表面 ３４ 下表面
３６ 接点 ３８ ゴールドフィンガー
４０ 貫通孔 ４２ 金属
４４ 導線
４６ 第２基板 ４８ メモリチップ
５０ 第２ヒートシンク ５２ 第２封止樹脂層
５４ 上表面 ５６ 下表面
５８ 接点 ６０ ゴールドフィンガー
６２ 貫通孔 ６４ 金属
６６ 導線
20 Upper layer memory card 22 Lower layer memory card 24 First substrate 26 Memory chip 28 First heat sink 30 First sealing resin layer 32 Upper surface 34 Lower surface 36 Contact point 38 Gold finger 40 Through hole 42 Metal 44 Conductor 46 Second substrate 48 Memory Chip 50 Second heat sink 52 Second sealing resin layer 54 Upper surface 56 Lower surface 58 Contact 60 Gold finger 62 Through hole 64 Metal 66 Conductor

Claims (4)

上層メモリカードと下層メモリカードを具え、
該上層メモリカードは第１基板、少なくとも一つのメモリチップ、第１ヒートシンク、及び第１封止樹脂層を具え、該第１基板は上表面と下表面を具え、該上表面に複数の接点、該接点に電気的に接続された複数のゴールドフィンガー、及び該上表面から該下表面に貫通する複数の貫通孔を具え、該貫通孔内に金属が充填され、該メモリチップは第１基板の上表面に設けられ、並びに第１基板の接点に電気的に接続され、該第１ヒートシンクは第１基板の下表面に設けられ、並びに該貫通孔内の金属と接触し、該第１封止樹脂層は該メモリチップを被覆し、該上層メモリカードは電子装置内に取り付けられ、該第１基板のゴールドフィンガーが該電子装置と接続され、
該下層メモリカードは、第２基板、少なくとも一つのメモリチップ、第２ヒートシンク及び第２封止樹脂層を具え、該第２基板に上表面と下表面が設けられ、第２基板の下表面に複数の接点、該接点と電気的に接続された複数のゴールドフィンガー、及び該第２基板の上表面から下表面に貫通する貫通孔が設けられ、該第２基板の貫通孔内に金属が充填され、該第２ヒートシンクは第２基板の上表面に設置され、並びに第２基板の貫通孔内の金属と接触し、該第２封止樹脂層は該下層メモリカードのメモリチップを被覆し、該下層メモリカードは電子装置内に取り付けられて第２基板のゴールドフィンガーを電子装置と電気的に接続させ、
該上層メモリカードの第１ヒートシンクが該下層メモリカードの第２ヒートシンクに重ねて設けられたことを特徴とする、スタック型小型メモリカード。 With upper and lower memory cards,
The upper layer memory card includes a first substrate, at least one memory chip, a first heat sink, and a first sealing resin layer, the first substrate includes an upper surface and a lower surface, and a plurality of contacts on the upper surface, A plurality of gold fingers electrically connected to the contact; and a plurality of through holes penetrating from the upper surface to the lower surface, the metal being filled in the through holes, and the memory chip is formed on the first substrate. Provided on the upper surface and electrically connected to the contact of the first substrate, the first heat sink is provided on the lower surface of the first substrate and contacts the metal in the through hole, and the first sealing The resin layer covers the memory chip, the upper memory card is mounted in the electronic device, and the gold finger of the first substrate is connected to the electronic device,
The lower-layer memory card includes a second substrate, at least one memory chip, a second heat sink, and a second sealing resin layer. The upper surface and the lower surface are provided on the second substrate, and the lower surface of the second substrate is provided. A plurality of contacts, a plurality of gold fingers electrically connected to the contacts, and a through hole penetrating from the upper surface to the lower surface of the second substrate are provided, and the metal is filled in the through hole of the second substrate The second heat sink is disposed on the upper surface of the second substrate, and contacts the metal in the through hole of the second substrate, the second sealing resin layer covers the memory chip of the lower memory card, The lower layer memory card is mounted in the electronic device to electrically connect the gold finger of the second substrate to the electronic device,
A stack type small memory card, wherein a first heat sink of the upper memory card is provided so as to overlap with a second heat sink of the lower memory card. 請求項１記載のスタック型小型メモリカードにおいて、上層メモリカードのメモリチップが複数の導線で第１基板の複数の接点に電気的に接続されたことを特徴とする、スタック型小型メモリカード。   2. The stack type small memory card according to claim 1, wherein the memory chip of the upper layer memory card is electrically connected to a plurality of contacts of the first substrate by a plurality of conductors. 請求項１記載のスタック型小型メモリカードにおいて、第１基板の複数の貫通孔内の金属、及び、第２基板の複数の貫通孔内の金属が銅とされたことを特徴とする、スタック型小型メモリカード。   2. The stack type small memory card according to claim 1, wherein the metal in the plurality of through holes of the first substrate and the metal in the plurality of through holes of the second substrate are made of copper. Small memory card. 請求項１記載のスタック型小型メモリカードにおいて、下層メモリカードのメモリチップが複数の導線で第２基板の複数の接点に電気的に接続されたことを特徴とする、スタック型小型メモリカード。
2. The stack type small memory card according to claim 1, wherein the memory chip of the lower layer memory card is electrically connected to a plurality of contacts of the second substrate by a plurality of conductive wires.
JP2003402831A 2003-12-02 2003-12-02 Stack type small-sized memory card Pending JP2005166892A (en)

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JP2014512686A (en) * 2011-04-21 2014-05-22 テッセラ，インコーポレイテッド Multilayer chip-on-board module with edge connector
US9281295B2 (en) 2011-04-21 2016-03-08 Invensas Corporation Embedded heat spreader for package with multiple microelectronic elements and face-down connection
US9312239B2 (en) 2010-10-19 2016-04-12 Tessera, Inc. Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics
US9312244B2 (en) 2011-04-21 2016-04-12 Tessera, Inc. Multiple die stacking for two or more die
US9437579B2 (en) 2011-04-21 2016-09-06 Tessera, Inc. Multiple die face-down stacking for two or more die
US9806017B2 (en) 2011-04-21 2017-10-31 Tessera, Inc. Flip-chip, face-up and face-down centerbond memory wirebond assemblies
WO2018063150A1 (en) * 2016-09-27 2018-04-05 Intel Corporation Frame embedded components

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9312239B2 (en) 2010-10-19 2016-04-12 Tessera, Inc. Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics
JP2014512686A (en) * 2011-04-21 2014-05-22 テッセラ，インコーポレイテッド Multilayer chip-on-board module with edge connector
US9281266B2 (en) 2011-04-21 2016-03-08 Tessera, Inc. Stacked chip-on-board module with edge connector
US9281295B2 (en) 2011-04-21 2016-03-08 Invensas Corporation Embedded heat spreader for package with multiple microelectronic elements and face-down connection
US9312244B2 (en) 2011-04-21 2016-04-12 Tessera, Inc. Multiple die stacking for two or more die
US9437579B2 (en) 2011-04-21 2016-09-06 Tessera, Inc. Multiple die face-down stacking for two or more die
US9640515B2 (en) 2011-04-21 2017-05-02 Tessera, Inc. Multiple die stacking for two or more die
US9735093B2 (en) 2011-04-21 2017-08-15 Tessera, Inc. Stacked chip-on-board module with edge connector
US9806017B2 (en) 2011-04-21 2017-10-31 Tessera, Inc. Flip-chip, face-up and face-down centerbond memory wirebond assemblies
US10622289B2 (en) 2011-04-21 2020-04-14 Tessera, Inc. Stacked chip-on-board module with edge connector
WO2018063150A1 (en) * 2016-09-27 2018-04-05 Intel Corporation Frame embedded components
US10681817B2 (en) 2016-09-27 2020-06-09 Intel Corporation Frame embedded components

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