JP2005165015A - Mask for film deposition, film deposition device, electro-optical device, and electronic appliance - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask for film deposition which maintains a high pattern precision though being heated, a film deposition device, an electro-optical device, and an electronic appliance. <P>SOLUTION: The film deposition device has a plurality of wires 21 and mask holding parts 22a and 22b which hold both ends in the lengthwise direction of the wires 21 so as to give tension to the wires. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a film forming mask, a film forming apparatus, an electro-optical device, and an electronic apparatus.

  In recent years, display devices including electro-optical devices such as organic electroluminescence devices (hereinafter referred to as EL (electoroluminescence) devices) and liquid crystal devices have been widely used for display units of electronic devices such as mobile phones and portable computers. The basic configuration of an EL device is a solid thin film (light emitting layer) containing fluorescent organic molecules sandwiched between two electrodes (a cathode and an anode). When a voltage is applied to the electrode, holes from the anode and electrons from the cathode are injected into the light emitting layer, and fluorescence is emitted from the light emitting layer. In the manufacturing process of the EL device, the deterioration of the organic material due to moisture and oxygen is a problem. Therefore, the vacuum evaporation method using the evaporation mask is used for patterning the light emitting layer and the electrode. This vacuum deposition method is particularly suitable for a low molecular organic EL device.

  In the vapor deposition process of the EL device, the cost can be reduced by increasing the number of panels (EL devices) obtained from one substrate by increasing the size of the substrate. However, in this method, as the deposition mask becomes larger, the yield of manufacturing the deposition mask decreases. Further, with the increase in size of the substrate, it is necessary to increase the size of the evaporation apparatus itself such as the substrate rotation method, which leads to an increase in apparatus cost and manufacturing cost. Furthermore, with the increase in size of the substrate, there also arises a problem that the variation in the deposited film thickness within the substrate increases.

In addition, conventionally, a method has been devised in which the deposition mask is divided into a plurality of unit masks, and the unit mask is positioned and fixed to the base material to avoid a decrease in the yield of the deposition mask manufacturing while increasing the size of the substrate. (For example, refer to Patent Document 1). Conventionally, a mask formed by fixing a wire-like resin to a frame has been devised (for example, see Patent Document 2).
JP 2001-237073 A JP 2001-323365 A

  However, in the method using the unit mask described in Patent Document 1, when there is a linear expansion difference (that is, a difference in deformation due to heat) between the base material and the unit mask, the mask is distorted by the radiation heat of the vapor deposition source. End up. Thereby, in the mask of patent document 1, the problem that the positional accuracy and shape accuracy of a vapor deposition pattern will fall will arise. Here, when a material having the same linear expansion coefficient is used for the base material and the unit mask, the entire mask expands. However, the materials that can be used as the unit mask are limited, and the expansion of the substrate causes the mask to expand. The expansion cannot be matched, and as a result, the positional deviation of the vapor deposition pattern becomes large.

  Further, in the method using the wire-shaped resin described in Patent Document 2, the positional deviation of the vapor deposition pattern cannot be eliminated due to the difference in linear expansion coefficient between the resin and the frame. Here, even if the linear expansion coefficients of the wire-like resin and the frame are the same, the pitch between the wires increases due to the expansion of the frame, and the deposition pattern is displaced. In addition, the wire-shaped resin may have a reduced dimensional accuracy of the vapor deposition pattern due to a circular cross section.

  Conventionally, as a method for increasing the size of the vapor deposition apparatus and the variation in the vapor deposition film thickness within the substrate, a method of arranging the vapor deposition source in a line and scanning the vapor deposition source parallel to the substrate surface is considered. Has been issued. Thereby, compared with the case where one vapor deposition source is fixed and arrange | positioned, it is trying to reduce the variation in the vapor deposition film thickness in a board | substrate. However, in this method, it is necessary to use a vapor deposition mask corresponding to the size of the substrate, which is ineffective for reducing the yield of vapor deposition mask manufacturing. In this method, the distance between the vapor deposition source and the mask is shortened due to the miniaturization of the vapor deposition apparatus, etc., so that the mask is more easily heated than the conventional one and the expansion is increased, and the accuracy of the vapor deposition pattern is lowered. End up.

The present invention has been made in view of the above circumstances, and forms a film pattern of a desired shape using a mask, and can maintain a high pattern accuracy even when the mask is heated, It is an object to provide a film forming apparatus, an electro-optical device, and an electronic apparatus.
In addition, the present invention can reduce the increase in size of the film forming apparatus even if the substrate is enlarged, and can maintain high pattern accuracy for the entire substrate, film forming apparatus, electro-optical device An object is to provide an apparatus and an electronic device.

In order to achieve the above object, the film forming mask of the present invention comprises a plurality of wires and a mask holding portion for holding both ends of the wires in the longitudinal direction so as to apply tension to the wires. To do.
According to the present invention, for example, a plurality of wires are arranged in parallel at a predetermined interval, the plurality of wires are arranged so as to cover a part of the substrate surface to be film-formed, and the film-forming material is applied to the substrate surface. When flying, a line-shaped vapor deposition pattern having a predetermined interval width can be formed on the substrate surface. Here, even if the wire is heated by radiant heat from the vapor deposition source, which is the emission source of the film forming material, the wire is pulled in the longitudinal direction by the mask holding portion, so that there is no loosening of the wire due to thermal expansion. The expansion of the short direction of the wire does not change so as to be a problem because the width of the wire is small. Therefore, according to the present invention, even if the material of the wire has a large linear expansion coefficient, that is, it is easily deformed by heat, the deformation of the opening due to the deformation of the wire can be extremely small, and the shape accuracy of the vapor deposition pattern and Arrangement accuracy can be greatly improved as compared with the prior art. The plurality of wires are not limited to being arranged in parallel. That is, the longitudinal direction of each wire may not be the same. Further, the wires may cross each other.

In addition, the film forming mask of the present invention includes two rod-like members arranged so that the mask holding portions face each other, and one end in a longitudinal direction of each of the plurality of wires is the two Preferably, the other end in the longitudinal direction is held by the other of the two rod-shaped members to form a set of masks.
According to the present invention, for example, each of a plurality of wires arranged in parallel can be held by two rod-shaped members while applying a constant tension. Therefore, the film formation mask of the present invention can greatly improve the shape accuracy of the vapor deposition pattern as compared with the conventional one, while having a simple configuration.

In the film forming mask of the present invention, the cross-sectional shape of the wire has a portion that becomes a shielding object when the film forming region of the film forming target substrate is viewed from a vapor deposition source that is an emission source of the film forming material. It is preferable that there is no shape.
According to the present invention, a film forming material vaporized or sublimated by a vapor deposition source can be uniformly attached to the entire film forming region, and a vapor deposition pattern having a uniform thickness and a sharp shape can be formed. . For example, when the cross-sectional shape of the wire is circular, even if the wire is brought into contact with the substrate surface, the contact portion between the wire and the substrate surface is in a very narrow range of the linear shape. Since portions other than the contact portion on the substrate surface are exposed, the film forming material flying from the vapor deposition source can adhere to the exposed portion. Even a portion that is a shadow of the wire as viewed from the vapor deposition source goes around the wire and adheres slightly to the shadow portion (exposed portion). In addition, when the deposition source is moved, the shadow portion moves, so that the adhesion region is further expanded. Thus, when the boundary of the adhesion region becomes ambiguous, the accuracy of the vapor deposition pattern is deteriorated and the film thickness at the edge portion of the vapor deposition pattern is reduced. Therefore, the present invention, for example, by making the cross section of the wire very thin and bringing the wire into close contact with the substrate can avoid obscuring the boundary of the adhesion region, and has a uniform film thickness and sharpness. A vapor deposition pattern having a shape can be precisely formed.

In the film forming mask of the present invention, it is preferable that the cross-sectional shape of the wire is any one of a rectangle, a trapezoid, and a triangle.
According to the present invention, for example, when the cross-sectional shape of the wire is rectangular, it is possible to avoid obscuring the adhesion region of the film-forming material by closely contacting the wire with a sufficiently thin cross-sectional shape to the substrate. it can. In addition, when the wire has a trapezoidal or triangular cross section, the above-mentioned shadow can be avoided without thinning the wire, it is easy to manufacture, has high mechanical strength, has a uniform film thickness and is sharp. A mask capable of precisely forming a vapor deposition pattern having a simple shape can be configured.

In the film forming mask of the present invention, it is preferable that the mask holding portion is made of a material having a small linear expansion coefficient. Therefore, in the film forming mask of the present invention, it is preferable that the mask holding portion is made of any one of silicon, invar, 42 alloy, nickel alloy, and quartz glass.
According to the present invention, even if the mask holding part is heated by the radiant heat emitted from the vapor deposition source, the amount of deformation of the mask holding part due to thermal expansion can be reduced. Therefore, the present invention can make the holding position of each wire precisely constant, and can greatly improve the shape accuracy and arrangement accuracy of the vapor deposition pattern as compared with the conventional case.

The film forming mask of the present invention preferably has a cooling means for cooling the mask holding part.
According to the present invention, even if radiant heat emitted from the vapor deposition source is radiated to the mask holding part, the temperature of the mask holding part can always be kept constant. Therefore, while expanding the selection range of the material of the mask holding portion, the holding position of each wire can be made precisely constant, and the shape accuracy and arrangement accuracy of the vapor deposition pattern can be greatly improved as compared with the conventional case.

Moreover, it is preferable that the film forming mask of the present invention has a heat shielding means for preventing radiant heat emitted from a vapor deposition source that is an emission source of the film forming material from reaching the mask holding portion.
According to the present invention, it is possible to keep the temperature of the mask holding part at a constant value without making the material of the mask holding part have a small linear expansion coefficient and without providing cooling means. Therefore, according to the present invention, the selection range of the material for the mask holding part can be widened and the structure of the mask can be made inexpensive, and the holding position of each wire can be made precisely constant, and the shape accuracy and placement accuracy of the vapor deposition pattern can be improved. Can be greatly improved.

In the film forming mask of the present invention, it is preferable that the heat shield means is a plate-shaped member having an opening, and is a heating area limited mask arranged in the vicinity of the wire.
According to the present invention, the film forming material that has passed through the opening of the heating area limiting mask can be further masked by the wire to form a vapor deposition pattern. Further, since the mask holding part can be arranged so as to be a shadow of the plate-shaped member of the heating area limited mask when viewed from the vapor deposition source, it is possible to shield the radiant heat emitted from the vapor deposition source from reaching the mask holding part.

In the film forming mask of the present invention, it is preferable that the heat shielding means is a vapor deposition source cover having a wall arranged so as to surround the vapor deposition source in the vicinity of the vapor deposition source.
According to the present invention, the direction of the radiant heat emitted from the vapor deposition source can be limited by the vapor deposition source cover, and the radiant heat can be blocked by the vapor deposition source cover from reaching the mask holding portion.

Further, the film forming mask of the present invention has a plurality of sets of the set of masks, and each set of masks is arranged so that the wires of the set of masks intersect the wires of the other set of masks. It is preferable that
According to the present invention, for example, by using two sets of the mask, by arranging the wires of one mask and the wires of the other mask to be orthogonal, the wires can be arranged in a grid pattern, Even if each wire receives radiant heat from the vapor deposition source, it can be prevented from being deformed. Therefore, with such a mask, for example, a thin film forming a pixel of an EL device (a thin film forming a light emitting layer or an electrode layer) can be precisely patterned. Note that a thin film forming a pixel of an EL device (a thin film forming a light emitting layer or an electrode layer) can be precisely patterned only by the set of masks. The number of the set of masks may be three or more, and the angle formed by crossing each set of wires is not limited to 90 degrees. In this way, pixel patterns having various shapes can be formed with high accuracy. For example, when forming R, G, and B pixels (picture element pixels) for color display, an R picture element pixel is formed by using two sets of the above masks, and then one mask is formed from that state. Can be shifted by one pixel pitch to form a G pixel pixel, and then the position of one mask can be shifted by one pixel pitch from that state to form a B pixel pixel. Therefore, R, G, and B pixels can be formed with the same mask.

In order to achieve the above object, a film forming apparatus of the present invention includes the film forming mask, a vapor deposition source that serves as an emission source of the film forming material, and a substrate holding unit that holds the substrate on which the film is to be formed. It is characterized by that.
According to the present invention, even when the wire is heated by the radiant heat emitted from the vapor deposition source, the wire is pulled in the longitudinal direction by the mask holding portion, so that there is no loosening of the wire due to thermal expansion. Directional expansion does not change so much as to be problematic due to the small width of the wire. Therefore, according to the present invention, even if the material of the wire has a large coefficient of linear expansion, the deformation of the opening due to the deformation of the wire can be extremely reduced, and the shape accuracy and arrangement accuracy of the vapor deposition pattern can be greatly increased compared to the conventional case. Can be improved.

Moreover, the film forming apparatus of the present invention has a film forming material emitting region in which the vapor deposition source is arranged in a line, and has a driving means for moving the film forming material emitting source or the substrate holding portion. preferable.
According to the present invention, for example, the distance between the deposition source and the substrate can be shortened and the film forming material can be efficiently attached to the substrate as compared with the conventional deposition source-fixed film forming apparatus. That is, even if the substrate for film formation is increased in size, the increase in size of the film formation apparatus can be suppressed, and the film formation apparatus can be manufactured at low cost. At this time, the distance between the mask and the vapor deposition source is also shortened, and the heating amount of the wire is also increased. However, according to the present invention, deformation due to the heat of the wire can be significantly reduced as compared with the conventional case. A reduction in the placement accuracy can be avoided. Therefore, according to the present invention, the shape accuracy and the placement accuracy of the vapor deposition pattern can be greatly improved as compared with the prior art while efficiently using the film forming material.

In order to achieve the above object, it is preferable that the electro-optical device of the present invention is manufactured using any one of the film forming mask and the film forming device.
According to the present invention, for example, a pixel pattern of an electro-optical device can be formed with high accuracy. Here, the electro-optical device includes an EL device, a plasma display device, a liquid crystal device, and the like.

According to another aspect of the invention, an electronic apparatus includes the electro-optical device.
ADVANTAGE OF THE INVENTION According to this invention, the electronic device which can display a high quality image can be provided at low cost, for example.

  Hereinafter, a film forming mask, a film forming apparatus, an electro-optical device, and an electronic apparatus according to an embodiment of the present invention will be described with reference to the drawings. In each of the drawings to be referred to, the scale may be different for each layer or each member in order to make the size recognizable on the drawing. The film forming mask according to the embodiment of the present invention is a vapor deposition mask used when a desired film pattern is formed on a substrate by vaporizing or sublimating a material. The film formation apparatus which concerns on embodiment of this invention is a vapor deposition apparatus provided with this vapor deposition mask at least.

(First embodiment)
FIG. 1 is a schematic plan view of the upper side inside the vapor deposition apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic plan view of the lower side inside the vapor deposition apparatus shown in FIG. That is, there is a structure shown in FIG. 2 below the structure shown in FIG. FIG. 3 is a side view of the inside of the vapor deposition apparatus shown in FIGS. 1 and 2.

  The vapor deposition apparatus 20a of this embodiment includes a plurality of wires 21, mask holding units 22a and 22b, a vapor deposition source 23, a vapor deposition source cover 24, a heating area limiting mask 25a, a substrate holding unit 26, and a linear 27. And a tension spring 28, mask fixing portions 29a and 29b, a vacuum chamber 30, a motor 31, and a ball screw 32. The components other than the motor 31 in the components of the vapor deposition apparatus 20a are disposed inside a vacuum chamber 30 that forms a sealed container. The vacuum chamber 30 is evacuated by a vacuum pump or the like and is in a vacuum state.

  Near the bottom surface in the vacuum chamber 30, a vapor deposition source 23 is disposed. The vapor deposition source 23 is an emission source for the film forming material. That is, the vapor deposition source 23 vaporizes or sublimates the film forming material, and has means for heating the film forming material. The vapor deposition source cover 24 forms a wall disposed so as to surround the vapor deposition source 23 in the vicinity of the vapor deposition source 23. As shown in FIGS. 2 and 3, a ball screw 32 is attached to the lower part of the vapor deposition source 23 and the vapor deposition source cover 24 so as to penetrate therethrough. The lower portions of the vapor deposition source 23 and the vapor deposition source cover 24 are slidably attached to the linear 27. The linear 27 serves as a guide for moving the vapor deposition source 23 and the vapor deposition source cover 24 along the ball screw 32 with the openings of the vapor deposition source 23 and the vapor deposition source cover 24 facing upward. Therefore, when the ball screw 32 is rotated by the motor 31, the vapor deposition source 23 and the vapor deposition source cover 24 move (scan) on the straight line along the ball screw 32.

  Above the vapor deposition source 23, a plurality of wires 21 and mask holding portions 22a and 22b are arranged. The plurality of wires 21 and the mask holding portions 22a and 22b form the vapor deposition mask of this embodiment. The mask holding portions 22 a and 22 b hold both ends of the wire 21 in the longitudinal direction while applying tension to the wire 21. Here, the plurality of wires 21 are held so as to be arranged in parallel at a constant interval (pitch).

  The mask holding part 22a is mechanically fixed to the mask fixing part 29a. That is, the mask holding part 22a is fixed to the mask fixing part 29a with bolts or pins. The mask fixing portion 29a is fixed to the inner wall of the vacuum chamber 30 with bolts or pins. Therefore, the mask holding part 22 a is fixed to the inner wall of the vacuum chamber 30. The mask holding part 22b is movably placed on the upper surface of the mask fixing part 29b. One end of a tension spring 28 is attached to the mask holding portion 22b. The other end of the tension spring 28 is fixed to the mask fixing portion 29b. The mask fixing portion 29b is fixed to the inner wall of the vacuum chamber 30 with bolts or pins. Accordingly, the mask holding portion 22b is movably disposed on the upper surface of the mask fixing portion 29b and is pulled to the right side of the drawing by the tension spring 28.

  Next, the wire 21 and the mask holding portions 22a and 22b constituting the vapor deposition mask of this embodiment will be described with reference to FIGS. FIG. 4 is a plan view showing the vapor deposition mask of this embodiment. FIG. 5 is a side view of the vapor deposition mask shown in FIG. As shown in FIGS. 4 and 5, the mask holding portions 22 a and 22 b are composed of two rod-like members arranged to face each other. One end in the longitudinal direction of each of the plurality of wires 21 is held at a fixed position by the mask holding portion 22a, and the other end of each of the plurality of wires 21 is pulled in a fixed direction by the mask holding portion 22b. Since this fixed direction is a direction in which both ends of the plurality of wires 21 are moved away from each other, the plurality of wires 21 are pulled with a constant tension (tension) T. That is, the plurality of wires 21 are held at fixed positions while being pulled at a predetermined tension T by the tension spring 28 and the mask holding portions 22a and 22b. The wires 21 are arranged in parallel with each other at regular intervals.

  As a result, according to the vapor deposition apparatus 20a of the present embodiment, even if each wire 21 is heated by the radiant heat emitted from the vapor deposition source 23, the wire 21 is pulled in the longitudinal direction by the mask holding portions 22a and 22b. In addition, there is no slack in each wire 21 due to thermal expansion, and expansion in the short direction of each wire 21 does not change so as to cause a problem because the width of the wire 21 is small. Therefore, according to this vapor deposition apparatus 20a, even if the material of each wire 21 is a thing with a large linear expansion coefficient, the deformation | transformation of the opening part shape by a deformation | transformation of the wire 21 can be made very small, and the shape precision and arrangement | positioning precision of a vapor deposition pattern Can be greatly improved as compared with the prior art.

  The material of the mask holding portions 22a and 22b preferably has a small linear expansion coefficient. For example, silicon, invar, 42 alloy, nickel alloy, quartz glass, or the like can be used as the mask holding portions 22a and 22b. In this way, even if the mask holding portions 22a and 22b are heated by the radiant heat emitted from the vapor deposition source 23, the amount of deformation of the mask holding portions 22a and 22b due to thermal expansion can be reduced. Therefore, the holding position of each wire 21 can be made precisely constant, and the shape accuracy and arrangement accuracy of the vapor deposition pattern can be greatly improved as compared with the conventional case.

  Moreover, the vapor deposition apparatus 20a is good also as having a cooling means (not shown) which cools the mask holding | maintenance parts 22a and 22b. In this way, even if the radiant heat from the vapor deposition source 23 reaches the mask holding portions 22a and 22b, the temperature of the mask holding portions 22a and 22b can be accurately maintained at a constant value. Therefore, the holding position of each wire 21 can be made precisely constant while expanding the selection range of the material of the mask holding portions 22a and 22b, and the shape accuracy and placement accuracy of the vapor deposition pattern can be greatly improved as compared with the conventional case. Can do.

  As shown in FIGS. 1 to 3, a heating area limiting mask 25 a is arranged between the vapor deposition source 23 and the plurality of wires 21 in the vacuum chamber 30. Here, the heating area limiting mask 25 a is fixed to the mask fixing portions 29 a and 29 b and is disposed in the vicinity of the plurality of wires 21. The heating area limiting mask 25a is a rectangular plate-shaped member and has an opening in the central region. This opening is rectangular. Accordingly, the heating area limiting mask 25a is a square ring-shaped plate member.

  The heating area limiting mask 25a having such a structure serves as a heat shielding means for preventing the radiant heat emitted from the vapor deposition source 23 from reaching the mask holding portions 22a and 22b. With this heating area limiting mask 25a, the heating area 51 of radiant heat emitted from the vapor deposition source 23 is limited as shown in FIG. 4, and the mask holding portions 22a and 22b are prevented from being heated. The vapor deposition source cover 24 also limits the direction of emission of radiant heat emitted from the vapor deposition source 23, and serves as a heat shielding means for preventing the radiant heat from reaching the mask holding portions 22a and 22b. That is, the mask holding portions 22a and 22b are shadows of the vapor deposition source cover 24 and the heating area limiting mask 25a when viewed from the vapor deposition source 23. Thereby, the mask holding parts 22a and 22b are not directly heated by the radiant heat of the vapor deposition source 23.

  According to such a configuration, heating is reduced and the thermal expansion of the mask holding portions 22a and 22b is reduced, so that a change in the interval (holding position) between the wires 21, that is, the opening pitch of the mask can be reduced. it can. Each wire 21 directly receives the radiant heat of the vapor deposition source 23. As described above, each wire 21 is pulled with a predetermined tension T, and the shape change in the short direction due to heat can be extremely reduced. . As a result, according to the vapor deposition apparatus 20a of the present embodiment, it is possible to form a highly accurate vapor deposition pattern without changing the opening pitch of the mask.

  As shown in FIGS. 1 and 3, the substrate 2 to be formed with a film is disposed above the plurality of wires 21 in the vacuum chamber 30. As a result, a vapor deposition pattern 50a is formed on the substrate 2. The substrate 2 is held by the substrate holding unit 26. The substrate holder 26 is fixed to the upper surface member of the vacuum chamber 30. FIG. 6 is a cross-sectional view showing the positional relationship between the plurality of wires 21 and the substrate 2. As shown in FIG. 6, each of the plurality of wires 21 and the film forming surface of the substrate 2 are preferably in close contact with each other.

  The cross-sectional shape of the wire 21 is a rectangle (rectangle). This is because the cross-sectional shape of the wire 21 is preferably such that when the film forming region of the substrate 2 is viewed from the vapor deposition source 23, there is no portion that becomes a shielding object. For example, when the cross-sectional shape of the wire 21 is circular, even if the wire 21 is brought into contact with the substrate 2, the contact portion between the wire 21 and the substrate 2 is in a very narrow range of the linear shape. Since portions other than the contact portion on the substrate surface are exposed, the film forming material flying from the vapor deposition source 23 can adhere to the exposed portion. That is, even a portion that is a shadow of the wire 21 when viewed from the vapor deposition source 23 wraps around the wire 21 and slightly adheres to the shadowed portion (exposed portion). Further, when the vapor deposition source 23 is moved, the shadow portion moves, so that the adhesion region is further expanded. Thus, when the boundary of the adhesion region is ambiguous, the accuracy of the vapor deposition pattern 50a is deteriorated and the film thickness of the edge portion of the vapor deposition pattern 50a is reduced. Therefore, in this embodiment, for example, by making the cross-section of the wire 21 very thin and bringing the wire 21 into close contact with the substrate 2, it is possible to avoid obscuring the boundary of the adhesion region, and with a uniform film thickness. Therefore, the vapor deposition pattern 50a having a sharp shape can be accurately formed.

  Next, an example of a method for manufacturing the wire 21 having a rectangular cross section as shown in FIG. 6 will be described. First, a wire having a circular cross section is formed by continuous wire drawing with a diamond die. Thereafter, the wire 21 having a rectangular cross section can be manufactured by using a rolling method using a rolling mill. Note that the wire 21 having a rectangular cross section may be manufactured only by continuous wire drawing with a diamond die. The dimensions of the wire 21 having such a rectangular cross section can be selected, for example, in the range where the long side of the cross section is 3 to 6 times the short side. Here, when the long side is set to 0.5 mm, the short side can be reduced to 0.084 mm, so that it is possible to reduce the occurrence of shadows during the vapor deposition.

  The cross-sectional shape of the wire 21 may be trapezoidal or triangular. FIG. 7A is a partial cross-sectional view showing the arrangement of the plurality of wires 21 and the substrate 2 when the cross-sectional shape of the wires 21 is a trapezoid. FIG. 7B is a partial cross-sectional view showing the arrangement of the plurality of wires 21 and the substrate 2 when the cross-sectional shape of the wires 21 is triangular. As shown in FIG. 7A, when the cross section of the wire 21 is trapezoidal, the wire 21 is arranged so that the long side is located on the substrate 2 side. When the cross section of the wire 21 is a triangle, it is preferable that the wire 21 be disposed so that the bottom surface is on the surface side of the substrate 2 (may be in contact with the substrate 21). In other words, it is preferable that the side surfaces of the wires 21 in the longitudinal direction have a reverse taper shape, in other words, the side surfaces of the wires 21 in the longitudinal direction face each other in a “C” shape.

  Thus, by making the cross-sectional shape of each wire 21 into a trapezoid or a triangle, it is possible to avoid the occurrence of shadows at the time of vapor deposition without making the wire 21 thin, easy to manufacture, high in mechanical strength, and uniform. It is possible to accurately form a vapor deposition pattern 50a having a uniform thickness and a sharp shape.

The material of the wire 21 does not need to be particularly limited because it is not necessary to consider the thermal expansion of the wire 21 itself as described above, and the selection range can be expanded. However, since the wire 21 is disposed inside the vacuum chamber 30, that is, in a vacuum, it is preferable that the wire 21 does not emit gas.
Moreover, you may comprise the wire 21 using a magnetic material. In this case, by arranging a magnet or the like on the top of the substrate 2 (on the side opposite to the film formation surface in the substrate 2), the wire 21 can be brought into close contact with the film formation surface of the substrate 2, and the vapor deposition pattern 50a The accuracy can be further improved.

  FIG. 8 is a plan view showing an arrangement state of the vapor deposition mask of this embodiment composed of a plurality of wires 21 and mask holding portions 22a and 22b and the heating area limiting mask 25a. The mask opening 52 is an area limited by the plurality of wires 21 with respect to the vapor deposition area (heating area 51) limited by the heating area limiting mask 25a. Therefore, the mask opening 52 is a plurality of line-shaped openings arranged in parallel to each other. With this opening, a vapor deposition pattern 50a as shown in FIG. 9 is formed. FIG. 9 is a plan view showing a vapor deposition pattern 50a formed on the surface of the substrate 2, which is patterned by the plurality of wires 21 and the heating area limiting mask 25a shown in FIG. As shown in FIG. 9, the vapor deposition pattern 50a is a plurality of line-shaped vapor deposition patterns arranged in parallel at equal intervals.

(Second Embodiment)
Next, the vapor deposition apparatus and vapor deposition mask which concern on 2nd Embodiment of this invention are demonstrated with reference to FIGS. FIG. 10 is a schematic plan view of the upper side inside the vapor deposition apparatus according to the second embodiment of the present invention. FIG. 11 is a side view of the inside of the vapor deposition apparatus shown in FIG. FIG. 12 is a plan view showing an arrangement state of the heating area limiting mask 25b, the plurality of wires 21, and the mask holding portions 22a and 22b according to the present embodiment. FIG. 13 is a plan view showing a vapor deposition pattern 50b formed on the surface of the substrate 2, which is patterned by the plurality of wires 21 and the heating area limiting mask 25b shown in FIG. 10 to 13, the same components as those of the vapor deposition apparatus 20a of the first embodiment shown in FIGS. 1 to 9 are denoted by the same reference numerals.

  The difference between the vapor deposition apparatus 20b of this embodiment and the vapor deposition apparatus 20a of 1st Embodiment is the shape of the opening part of the heating area limitation mask 25b. Other components and their arrangement in the vapor deposition apparatus 20b of the present embodiment are the same as those of the vapor deposition apparatus 20a of the first embodiment. That is, the heating area limiting mask 25b in the vapor deposition apparatus 20b of the present embodiment is a rectangular plate-shaped member and has two openings as shown in FIGS. The two openings have the same shape and each form a square opening. Each opening is arranged symmetrically about the center line of the heating area limiting mask 25b. In other words, the heating area limiting mask 25b of this embodiment has an opening that is obtained by dividing the opening of the heating area limiting mask 25a of the first embodiment into two.

  By using the heating area limiting mask 25b having such a configuration, the vapor deposition apparatus 20b of this embodiment can precisely form the vapor deposition pattern 50b shown in FIG. That is, the vapor deposition apparatus 20b of this embodiment can form the vapor deposition pattern 50b which divided | segmented the several line-shaped vapor deposition pattern 50a as shown in FIG. 9 into two, respectively.

(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIG. In the present embodiment, the vapor deposition apparatus and the vapor deposition mask according to the present invention are applied to a manufacturing process of an organic EL device. FIG. 14 is a plan view showing an organic EL panel 2 ′ according to an embodiment of the present invention. A plurality of organic EL panels 2 ′ can be formed on the substrate 2 of the above embodiment.

  In manufacturing the organic EL panel 2 ′ using a low molecular material, the organic film is formed by vapor deposition. When the organic EL panel 2 ′ is a full-color panel, as shown in FIG. 14, pixels in which R pixels (picture elements) 50R, G pixels (picture elements) 50G, and B pixels (picture elements) 50B are arranged in stripes are arranged. Need to form. Therefore, in the organic EL panel 2 ′, it is necessary to separately coat organic materials that emit light in RGB by vapor deposition.

  As a process for that purpose, first the R pixel 50R is handled by the vapor deposition mask (the plurality of wires 21 and the heating area limiting masks 25a and 25b in the above embodiment) having slit openings corresponding to the arrangement (pitch) of pixels of the same color. An organic material is deposited as a linear deposition pattern 50c. Subsequently, in the same manner as the R pixel 50R, organic materials corresponding to the G pixel 50G and the B pixel 50B are deposited. When forming the vapor deposition pattern of the G pixel 50G and the B pixel 50B, the position of the vapor deposition mask is shifted by the pixel pitch, so that the R pixel 50R, the G pixel 50G, and the B pixel 50B are used using the same vapor deposition mask. The vapor deposition pattern can be formed. Here, the vapor deposition pattern 50c is linear, but each pixel emits light by a pixel electrode or the like provided on the organic EL panel 2 ', so that there is no problem in full color image display. Note that the deposition mask can be moved automatically and with high accuracy by a driving means such as a piezoelectric vibrator.

(Fourth embodiment)
Next, the vapor deposition apparatus and vapor deposition mask which concern on 4th Embodiment of this invention are demonstrated with reference to FIGS. 15-22. The vapor deposition apparatus 20c of this embodiment uses two sets of vapor deposition masks (a plurality of wires 21 and a heating area limited mask 25a) provided in the vapor deposition apparatus 20a of the first embodiment. Each set of masks is arranged such that one set of wires 21 intersects the other set of wires 21 at right angles. The other structure in the vapor deposition apparatus 20c of this embodiment is the same as the vapor deposition apparatus 20a of 1st Embodiment.

  FIG. 15 is a schematic plan view of the upper side inside the vapor deposition apparatus 20c according to the present embodiment. FIG. 16 is a schematic plan view of the lower side inside the vapor deposition apparatus 20c of this embodiment. FIG. 17 is a side view of the inside of the vapor deposition apparatus 20c of this embodiment. FIG. 18 is a plan view showing the vapor deposition mask of this embodiment. FIG. 19 is a partial side view of the vapor deposition mask shown in FIG. FIG. 20 is a partial cross-sectional view showing the positional relationship between the plurality of wires 21 b and the substrate 2. FIG. 21 is a plan view showing a vapor deposition pattern 50d deposited by the vapor deposition apparatus 20c of this embodiment. FIG. 22 is a plan view showing an organic EL panel 2 ′ manufactured using the vapor deposition apparatus 20 c of this embodiment.

  As shown in FIG. 18, the vapor deposition mask provided in the vapor deposition apparatus 20c of the present embodiment is a first set of masks composed of a plurality of wires 21a and mask holding portions 22a and 22b composed of two rod-shaped members that hold the wires 21a. And a second set of masks composed of a plurality of wires 21b and mask holding portions 22c and 22d made of two rod-like members for holding the wires 21b. The first set and the second set of masks have the same configuration as the mask of the first embodiment shown in FIG. Further, the arrangement and connection state of each set of mask holding portions 22a, 22b, 22c, and 22d with respect to the vacuum chamber 30 are the same as those of the vapor deposition apparatus 20a of the first embodiment.

  In other words, the first set of masks is the same as the deposition mask composed of the plurality of wires 21a and the mask holding portions 22a and 22b in the deposition apparatus 20a of the first embodiment, and the second set of masks is the first set of masks. This is the same as that in which the mask is rotated 90 degrees and placed in the vacuum chamber 30. That is, the mask holding portions 22 a and 22 c of the present embodiment are fixed to the vacuum chamber 30, and the mask holding portions 22 b and 22 d of the present embodiment are pulled with a tension T in a certain direction by the tension spring 28. Therefore, each wire 21a, 21b is pulled with a constant tension T. Further, the first set of wires 21a and the second set of wires 21b are arranged so as to intersect at right angles.

  As a result, according to the vapor deposition apparatus 20c of the present embodiment, not only a line-shaped vapor deposition pattern, but also a plurality of vapor deposition patterns 50d arranged on the X-axis-Y-axis plane as shown in FIG. 21 are simultaneously formed. can do.

(Electro-optical device)
Next, an electro-optical device manufactured using the vapor deposition apparatuses 20a, 20b, and 20c of the above embodiment and a manufacturing method thereof will be described. In the present embodiment, an organic EL device will be described as an example of an electro-optical device.
23 to 25 are schematic views schematically showing the passive matrix type organic EL device according to this embodiment. FIG. 23 is a plan view, FIG. 24 is an internal configuration diagram of the organic EL device 1, and FIG. FIG. 24 is a view taken along the line II ′ of FIG. As shown in these drawings, the organic EL device 1 includes a plurality of first electrodes (anodes) 3 extending in a strip shape in a predetermined direction on a substrate 2 and orthogonal to the extending direction of the first electrodes 3. A plurality of cathode separators (separators) 4 extending in the direction of the crossing, a second electrode (cathode) 5 formed between the cathode separators 4, and an intersection region (light emission) of the first electrode 3 and the second electrode 5 In the region (A), the organic functional layer 6 sandwiched between the first electrode 3 and the second electrode 5 and the first electrode 3, the cathode separator 4, the second electrode 5, the organic functional layer 6 and the like can be sealed. The sealing portion 7 is a main component. In FIG. 24, symbol B represents a cathode separator formation region that is a range where the cathode separator 4 is formed on the substrate 2, and in the vicinity of one end portion Ba of the cathode separator formation region B, as shown in the figure. In addition, a plurality of connecting portions 8 a are formed so as to be sandwiched between the cathode separators 4 and closer to the center of the substrate than both ends of the cathode separator 4. The connection portion 8a forms part of the connection terminal 8 and is directly connected to the second electrode 5. Further, as described above, the cathode separator formation region B is a region where a plurality of cathode separators 4 are formed on the substrate 2. More specifically, the cathode separator formation region B is the entire region where the space between the cathode separator 4 and the cathode separator 4 exists. That is.

  The first electrode 3 and the connection terminal 8 extend so that one end 3 a of the first electrode 3 and one end 8 b of the connection terminal 8 are located outside the sealing portion 7. A data side driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to one end portion 3a, and a scanning side driving circuit 101 including a shift register and a level shifter is connected to one end portion 8b of the connection terminal 8. Has been.

  As shown in FIG. 25, the organic functional layer 6 includes a light emitting layer 61 that emits light of a predetermined wavelength when a current flows through the first electrode 3 and the second electrode 5 sandwiching the organic functional layer 6 up and down. The organic EL device 1 has a function as a display device by providing a plurality of light emitting areas A in which an organic functional layer including such a light emitting layer 61 is formed in a matrix. In the organic EL device 1 according to the present embodiment, the substrate 2 and the first electrode 3 are translucent, and the light emitted from the light emitting layer 61 is emitted from the substrate 2 side. ing.

  Examples of the material of the substrate 2 having translucency include glass, quartz, resin (plastic, plastic film), and the like. In particular, an inexpensive soda glass substrate is preferably used. The first electrode 3 is formed of a light-transmitting conductive material made of a metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO), and is shaped like a strip, and A plurality of each is formed at a predetermined interval. The first electrode 3 serves to inject holes into the organic functional layer 6. The connection terminal 8 is formed of a conductive metal material, is rectangularly shaped, and is arranged so that its end 8c is located between the cathode separators 4 as shown in the figure. Has been.

An insulating film 9 made of a silicon oxide film (SiO ₂ ) is formed on the substrate 2 on which the first electrode 3 and the connection terminal 8 are formed. The insulating film 9 is patterned so that the first electrode 3 in the light emitting region A, the vicinity of the end portion 3a of the first electrode 3, the connection portion 8a and the vicinity of the end portion 8b of the connection terminal 8 are exposed. The insulating film 9 is patterned so that the connecting portion 8a is positioned closer to the center of the substrate 2 than the end portion 4a of the cathode separator 4 (one end portion Ba of the cathode separator forming region B). The cathode separator 4 is made of a photosensitive resin such as polyimide, and has a predetermined height h (for example, 6 μm), a cross section in the width direction is set in a reverse taper shape, and each has a predetermined interval. A plurality are formed.

  The organic functional layer 6 is a laminate in which a hole injection / transport layer 62, a light emitting layer 61, and an electron injection / transport layer 63 are stacked. The hole injection / transport layer 62 is formed of, for example, a mixture of a polythiophene derivative such as polyethylene dioxythiophene and polystyrene sulfonic acid. The hole injection / transport layer 62 has a function of injecting holes into the light emitting layer 61 and transporting holes inside the hole injection / transport layer 62.

  The light emitting layer 61 has three types, a red light emitting layer 61a that emits red (R), a green light emitting layer 61b that emits green (G), and a blue light emitting layer 61c that emits blue (B). 61a-61c are arranged in a mosaic. Examples of the material of the light emitting layer 61 include anthracene, pyrene, 8-hydroxyquinoline aluminum, bisstyrylanthracene derivative, tetraphenylbutadiene derivative, coumarin derivative, oxadiazole derivative, distyrylbenzene derivative, pyrrolopyridine derivative, perinone derivative, A cyclopentadiene derivative, a thiadiazolopyridine derivative, or a low molecular weight material thereof can be doped with rubrene, quinacridone derivatives, phenoxazone derivatives, DCM, DCJ, perinone, perylene derivatives, coumarin derivatives, diazaindacene derivatives, or the like.

  The electron injection / transport layer 63 has a function of injecting electrons into the light emitting layer 61 and a function of transporting electrons inside the electron injection / transport layer 63. As the electron injection / transport layer 63, for example, lithium quinolinol, lithium fluoride, bathophencesium, or the like can be suitably used. A metal having a work function of 4 eV or less, such as Mg, Ca, Ba, Sr, Li, Na, Rb, Cs, Yb, Sm, or the like can also be used.

The second electrode 5 is made of a highly reflective metal film such as an Al film or an Ag film, and efficiently emits light emitted from the light emitting layer 61 to the second electrode 5 side to the substrate 2 side. It is like that. Incidentally, SiO as necessary on the second electrode 5 may be provided a protective layer for preventing oxidation formed of SiO _2, SiN, or the like.

  The sealing part 7 is comprised from the sealing resin 7a apply | coated to the board | substrate 2, and the sealing can (sealing member) 7b. The sealing resin 7a is an adhesive that adheres the substrate 2 and the sealing can 7b, and is applied annularly around the substrate 2 by, for example, a microdispenser. The sealing resin 7a is made of a thermosetting resin, an ultraviolet curable resin, or the like, and is particularly preferably made of an epoxy resin that is a kind of thermosetting resin. The sealing resin 7a is made of a material that hardly allows oxygen or moisture to pass therethrough, preventing water or oxygen from entering the sealing can 7b from between the substrate 2 and the sealing can 7b. The electrode 5 or the light emitting layer 61 is prevented from being oxidized.

  The sealing can 7b is provided with a recess 7b1 for accommodating the first electrode 3, the organic functional layer 6, the second electrode 5, and the like on the inner side thereof, and is bonded to the substrate 2 via the sealing resin 7a. In addition, a getter material that absorbs or removes oxygen and moisture can be provided on the inner surface side of the sealing can 7b on the outer side of the cathode separator formation region B as necessary. Examples of the getter material include alkali metals such as Li, Na, Rb, and Cs, alkaline earth metals such as Be, Mg, Ca, Sr, and Ba, oxides of alkaline earth metals, alkali metals, and alkaline earths. A metal hydroxide or the like can be preferably used. Alkaline earth metal oxides act as a dehydrating agent by reacting with water and changing to hydroxides. Alkali metal or alkaline earth metal reacts with oxygen to change into hydroxide and reacts with water to change into oxide, and thus acts not only as a dehydrating material but also as a deoxidizing material. Thereby, oxidation of the organic functional layer 6 etc. can be prevented and the reliability of an apparatus can be improved.

  Next, a method for manufacturing the organic EL device 1 of the present embodiment will be described with reference to the drawings. The manufacturing method of the organic EL device 1 according to the present embodiment includes, for example, (1) a first electrode formation step, (2) an insulating film formation step, (3) a cathode separator formation step, and (4) a hole injection / transport layer formation. A step, (5) a light emitting layer forming step, (6) an electron injection / transport layer forming step, (7) a second electrode forming step, and (8) a sealing step. In addition, a manufacturing method is not restricted to this, When other processes are removed as needed, it may be added.

(1) First Electrode Formation Step The first electrode formation step is a step of forming a plurality of first electrodes 3 extending in a strip shape in a predetermined direction on the substrate 2. In this first electrode forming step, as shown in FIGS. 26A and 26B, a plurality of first electrodes 3 made of a metal oxide such as ITO or IZO are formed on the substrate 2 by sputtering. As a result, a plurality of strip-shaped first electrodes 3 are formed with a predetermined interval, and one end 3a (the upper side in FIG. 26A) is formed so as to reach the end 2a of the substrate 2. Has been. In the first electrode forming step, the connection terminal 8 is also formed. As illustrated, the connection terminal 8 has one end 8b reaching the end 2b of the substrate 2 and the other end 8c positioned closer to the center of the substrate 2 than the end Ba of the cathode separator formation region B. It is formed.

(2) Insulating Film Forming Step As shown in FIGS. 27A and 27B, the insulating film forming step includes the first electrode 3 in the light emitting region A, the vicinity of the end 3a of the first electrode 3, the connection portion 8a, This is a step of forming an insulating film 9 patterned on the substrate 2, the first electrode 3 and the connection terminal 8 so that the vicinity of the end 8 b of the connection terminal 8 is exposed. In this insulating film forming step, the insulating film 9 is formed by plasma CVD using tetraethoxysilane, oxygen gas, or the like as a raw material. The insulating film 9 is patterned so that the connection portion 8a is located closer to the center of the substrate 2 than the end portion Ba of the cathode separator formation region B.

(3) Cathode separator forming step As shown in FIGS. 28A and 28B, the cathode separator forming step includes a plurality of cathodes extending in a strip shape in a direction orthogonal to the extending direction of the first electrode 3. In this step, the separators 4 are formed at predetermined intervals. In this cathode separator forming step, first, a photosensitive resin such as polyimide is applied on the substrate 2 by spin coating or the like with a predetermined thickness (height h of the cathode separator 4). Then, the cathode separator 4 whose cross section in the width direction is set to a reverse taper shape is etched into the cathode separator forming region B by etching the photosensitive resin such as polyimide applied with the predetermined thickness by photolithography technique. A plurality are formed. In addition, such a cathode separator 4 is formed so that the connection part 8a may be located between the cathode separators 4.

(4) Hole Injection / Transport Layer Formation Step In the hole injection / transport layer formation step, the hole injection / transport layer 62 is formed on the exposed first electrode 3 as shown in FIGS. Is a step of forming. In this hole injection / transport layer forming step, the hole injection / transport layer material is deposited on the first electrode 3 through a deposition mask having an opening corresponding to each light emitting region A, so that the hole injection / transport layer material is deposited. A transport layer 62 is formed. In this hole injection / transport layer forming step, the hole injection / transport layer 62 is provided with high accuracy by using the vapor deposition apparatus 20c of the fourth embodiment having the vapor deposition mask shown in FIG. Can be formed.

(5) Light-Emitting Layer Forming Step The light-emitting layer forming step is performed by injecting / injecting holes formed on the first electrode 3 as shown in FIGS. 30 (a), 30 (b), 31 (a), 31 (b). In this step, the light emitting layer 61 made of a low molecular material is formed on the transport layer 62. In this light emitting layer forming step, first, a hole injecting / transporting layer is formed by vaporizing a blue light emitting layer material vaporized through an evaporation mask having an opening corresponding to the blue light emitting region Ac where the blue light emitting layer 61c is to be formed. A blue light emitting layer 61c as shown in FIGS. 30A and 30B is formed by vapor deposition on 62c. Subsequently, the red light emitting layer 61a is formed by vapor-depositing the red light emitting layer material evaporated through the vapor deposition mask having the opening corresponding to the red light emitting region Aa on the hole injection / transport layer 62a, and the green light emitting The green light emitting layer 61b is formed by vapor-depositing the green light emitting layer material vaporized through the vapor deposition mask having an opening corresponding to the region Ab on the hole injection / transport layer 62b (FIGS. 31A and 31B). b)).
Here, the blue light emitting layer 61c, the red light emitting layer 61a, and the green light emitting layer 61b are formed by using the vapor deposition apparatus 20c of the fourth embodiment having the vapor deposition mask shown in FIG. It can be performed with high accuracy. Further, the blue light emitting layer 61c, the red light emitting layer 61a, and the green light emitting layer 61b can be formed using the same vapor deposition mask as shown in FIG. 14 or FIG. 22, and each time the vapor deposition mask is shifted by the pixel pitch. It is possible to form by evaporating a light emitting layer of another color.

(6) Electron Injection / Transport Layer Formation Step The electron injection / transport layer formation step is a step of forming an electron injection / transport layer 63 on the light emitting layer 61 as shown in FIGS. 32 (a) and 32 (b). . In this electron injection / transport layer forming step, an electron injection / transport layer material vaporized through a deposition mask having an opening corresponding to each light-emitting region A is deposited on the light-emitting layer 61, whereby electron injection / transport is performed. Layer 63 is formed. Also in this electron injection / transport layer forming step, the electron injection / transport layer 63 is formed with high accuracy using the deposition apparatus 20c of the fourth embodiment having the deposition mask shown in FIG. 18 and the configuration shown in FIG. can do.
In addition, the process which combined the hole injection / transport layer formation process, the light emitting layer formation process, and the electron injection / transport layer formation process is an organic functional layer formation process.

(7) Second Electrode Formation Step The second electrode formation step is a step of forming the second electrode 5 between the adjacent cathode separators 4 as shown in FIGS. 33 (a) and 33 (b). In the second electrode forming step, the line-shaped second electrode 5 is formed with high accuracy using the vapor deposition apparatus 20a of the first embodiment having the vapor deposition mask shown in FIG. 4 and the configuration shown in FIG. Can do.

(8) Sealing process Finally, the substrate 2 and the sealing can 7b on which the first electrode 3, the organic functional layer 6, the second electrode 5, and the like are formed by the above-described process are sealed through the sealing resin 7a. To do. For example, a sealing resin 7a made of a thermosetting resin or an ultraviolet curable resin is applied to the peripheral portion of the substrate 2, and the sealing can 7b is disposed on the sealing resin (see FIG. 25). The sealing step is preferably performed in an inert gas atmosphere such as nitrogen, argon, or helium. If performed in the atmosphere, if a defect such as a pinhole has occurred in the second electrode 5, water or oxygen may enter the second electrode 5 from the defective portion and the second electrode 5 may be oxidized. Therefore, it is not preferable.

  Thereafter, the data side driving circuit 100 provided on the substrate 2 or outside is connected to the substrate 2 and the first electrode 3, and the scanning side driving circuit 101 provided on the substrate 2 or outside is connected to the second electrode 5. By doing so, the organic EL device 1 of the present embodiment is completed.

  According to the manufacturing process described above, the hole injection / transport layer 62, the light emitting layer (the blue light emitting layer 61c, the red light emitting layer 61a, and the green light emitting layer) are formed using the vapor deposition mask and vapor deposition apparatuses 20a, 20b, and 20c according to the present invention. 61b) Since the electron injection / transport layer 63, the electron injection / transport layer 63, and the second electrode 5 are vapor-deposited, the pattern shape accuracy and position accuracy of each of these layers can be improved as compared with the conventional case. Therefore, according to the present embodiment, it is possible to provide an organic EL device that can display a high-quality image and reduce a short circuit between wirings at a low cost.

(Electronics)
Next, an electronic apparatus including the electro-optical device according to the above embodiment will be described.
FIG. 34A is a perspective view showing an example of a mobile phone. In FIG. 34A, reference numeral 1000 denotes a mobile phone body, and reference numeral 1001 denotes a display unit including the electro-optical device according to the embodiment. FIG. 34B is a perspective view showing an example of a wristwatch type electronic device. In FIG. 34B, reference numeral 1100 indicates a watch body, and reference numeral 1101 indicates a display unit including the electro-optical device according to the embodiment. FIG. 34C is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 34C, reference numeral 1200 denotes an information processing apparatus, reference numeral 1202 denotes an input unit such as a keyboard, reference numeral 1204 denotes an information processing apparatus body, and reference numeral 1206 denotes a display unit including the electro-optical device of the above embodiment.

  Since the electronic device shown in FIG. 34 is manufactured using the vapor deposition mask and vapor deposition apparatuses 20a, 20b, and 20c of the above-described embodiment, it is possible to display a high-quality image and avoid the occurrence of defects such as a short circuit. Can be provided at low cost.

  The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention, and the specific materials and layers mentioned in the embodiment can be added. The configuration is merely an example, and can be changed as appropriate. For example, although the EL device is cited as an example of the electro-optical device in the above embodiment, the present invention is not limited to this, and the present invention can be applied to various electro-optical devices such as a plasma display device and a liquid crystal device. The present invention can also be applied to the production of color filters.

It is a top view of the inside upper side in the vapor deposition apparatus which concerns on 1st Embodiment of this invention. It is a top view of the inside lower side in a vapor deposition apparatus same as the above. It is an internal side view in a vapor deposition apparatus same as the above. It is a top view of the vapor deposition mask with which the vapor deposition apparatus same as the above is provided. It is a side view of the vapor deposition mask with which the vapor deposition apparatus same as the above is provided. It is sectional drawing which shows arrangement | positioning with the wire and board | substrate with which the vapor deposition apparatus same as the above is provided. It is sectional drawing which shows arrangement | positioning of the other wire and board | substrate with which the vapor deposition apparatus same as the above is provided. It is a top view which shows the wire and heating area limited mask with which a vapor deposition apparatus same as the above is provided. It is a top view which shows the vapor deposition pattern vapor-deposited by the vapor deposition apparatus same as the above. It is a top view of the inside upper side in the vapor deposition apparatus which concerns on 2nd Embodiment of this invention. It is an internal side view in a vapor deposition apparatus same as the above. It is a top view of the wire and heating area limited mask with which a vapor deposition apparatus same as the above is provided. It is a top view which shows the vapor deposition pattern vapor-deposited by the vapor deposition apparatus same as the above. It is a top view which shows the organic electroluminescent panel which concerns on 3rd Embodiment of this invention. It is a top view of the inside upper side in the vapor deposition apparatus which concerns on 4th Embodiment of this invention. It is a top view of the inside lower side in a vapor deposition apparatus same as the above. It is an internal side view in a vapor deposition apparatus same as the above. It is a top view of the vapor deposition mask with which the vapor deposition apparatus same as the above is provided. It is a partial side view of the vapor deposition mask with which the vapor deposition apparatus same as the above is provided. It is sectional drawing which shows arrangement | positioning with the wire and board | substrate with which the vapor deposition apparatus same as the above is provided. It is a top view which shows the vapor deposition pattern vapor-deposited by the vapor deposition apparatus same as the above. It is a top view which shows the organic electroluminescent panel manufactured using the vapor deposition apparatus same as the above. 1 is a plan view of an electro-optical device according to an embodiment of the invention. It is an internal block diagram of an electro-optical device same as the above. It is an I-I 'arrow line view in FIG. It is explanatory drawing which shows the manufacturing method of an electro-optical device same as the above. It is explanatory drawing which shows the manufacturing method of an electro-optical device same as the above. It is explanatory drawing which shows the manufacturing method of an electro-optical device same as the above. It is explanatory drawing which shows the manufacturing method of an electro-optical device same as the above. It is explanatory drawing which shows the manufacturing method of an electro-optical device same as the above. It is explanatory drawing which shows the manufacturing method of an electro-optical device same as the above. It is explanatory drawing which shows the manufacturing method of an electro-optical device same as the above. It is explanatory drawing which shows the manufacturing method of an electro-optical device same as the above. It is a perspective view which shows the electronic device provided with the electro-optical device same as the above.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL apparatus, 2 ... Board | substrate, 2 '... Organic EL panel, 20a, 20b, 20c ... Deposition apparatus, 21, 21a, 21b ... Wire, 22a, 22b ... Mask holding part, 23 ... Deposition source, 24 ... Deposition Source cover, 25a ... heating area limited mask, 26 ... substrate holding part, 27 ... linear, 28 ... tension spring, 29a, 29b ... mask fixing part, 30 ... vacuum chamber, 31 ... motor, 32 ... ball screw, 50a, 50b, 50c, 50d ... deposition pattern, 51 ... heating area, 52 ... mask opening, T ... tension

Claims (15)

Multiple wires,
A mask for forming a film, comprising: a mask holding portion that holds both ends of the wire in the longitudinal direction so as to apply tension to the wire. The mask holding part has two rod-like members arranged opposite to each other,
One end in the longitudinal direction of each of the plurality of wires is held by one of the two rod-shaped members, and the other end in the longitudinal direction is held by the other of the two rod-shaped members. 2. The film forming mask according to claim 1, wherein the mask is a set of masks.   The cross-sectional shape of the wire is such that when a film forming region in a substrate on which a film is to be formed is viewed from a vapor deposition source that is an emission source of a film forming material, there is no portion that becomes a shielding object. 3. The film forming mask according to 1 or 2.   The film forming mask according to claim 1, wherein a cross-sectional shape of the wire is any one of a rectangle, a trapezoid, and a triangle.   5. The film forming mask according to claim 1, wherein a material of the mask holding part is made of a material having a small linear expansion coefficient.   5. The film forming mask according to claim 1, wherein the mask holding portion is made of any one of silicon, invar, 42 alloy, nickel alloy, and quartz glass.   The film forming mask according to claim 1, further comprising a cooling unit that cools the mask holding unit.   8. The film formation according to claim 1, further comprising heat shielding means for preventing radiant heat emitted from an evaporation source that is an emission source of the film forming material from reaching the mask holding portion. 9. Mask.   9. The film forming mask according to claim 8, wherein the heat shielding means is a plate-shaped member having an opening, and is a heating area limited mask disposed in the vicinity of the wire.   9. The film forming mask according to claim 8, wherein the heat shielding means is a vapor deposition source cover having a wall disposed so as to surround the vapor deposition source in the vicinity of the vapor deposition source. A plurality of sets of the set of masks;
11. The membrane according to claim 1, wherein each set of masks is arranged such that a set of mask wires intersects with another set of mask wires. Forming mask. The film forming mask according to any one of claims 1 to 11,
A vapor deposition source as an emission source of the film forming material;
A film forming apparatus comprising: a substrate holding unit configured to hold a substrate on which the film is to be formed. The vapor deposition source has an emission region of a film forming material arranged in a line,
The film forming apparatus according to claim 12, further comprising a driving unit that moves an emission source of the film forming material or a substrate holding unit.   An electro-optical device manufactured using any one of the film forming mask according to any one of claims 1 to 11 and the film forming apparatus according to claim 12 or 13. apparatus. An electronic apparatus comprising the electro-optical device according to claim 14.

Images