JP2005159327A - Method of manufacturing wiring, method of manufacturing thin film transistor, and method of discharging droplet - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing wiring by which the line width of wiring etc., can be reduced by a method which is different from the conventional method, because it is required to reduce the line width by preventing the line width from becoming broader in width in forming the wiring etc., by the dripping method represented by the ink-jet method. <P>SOLUTION: In the method, a liquid repellent area is formed on a surface on which a desired pattern is formed and another area which becomes selectively lyophilic to the liquid repellent area is formed before the pattern is formed. Thereafter, a pattern of wiring etc., is formed in the lyophilic area by the dripping method represented by the ink-jet method in which a composition containing a conductive material for the wiring etc., is dripped. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a method for manufacturing a wiring by dropping a composition mixed with a material to be formed, a thin film transistor, and a method for manufacturing a semiconductor device having the thin film transistor. Specifically, the present invention relates to a method for manufacturing a wiring by a droplet discharge (inkjet) method and a method for manufacturing a thin film transistor. Further, the present invention relates to a method for discharging those droplets.

A droplet discharge technique represented by a piezo method or a thermal jet method, or a continuous droplet discharge technique has attracted attention. Although this droplet discharge technique has been used for printing characters and images, attempts to apply it to the semiconductor field such as fine pattern formation have recently started.

A film pattern forming method has been proposed that improves the film pattern forming method by the ink jet method, achieves a thick film, satisfies the demand for thinning, and does not cause problems such as disconnection or short circuit when used as a conductive film. (See Patent Document 1).
Japanese Patent Laid-Open No. 2003-136991

According to Patent Document 1, the substrate is processed in advance so that the contact angle with the droplet is 60 deg. In the first discharge process, the droplet is deposited on the substrate in the entire wiring formation region. Discharge at a pitch larger than the diameter. In the second ejection step, droplets are ejected at the same pitch as in the first ejection step at a position different from the ejection one in the first ejection step in the entire wiring formation region. In the third ejection step, it is described that droplets are ejected to the entire wiring formation region at a pitch smaller than the pitch in the first ejection step.

Further, as a surface treatment method for controlling the contact angle, a method of irradiating plasma in normal pressure or vacuum is cited. The gas type used for the plasma treatment can be selected in consideration of the surface material of the substrate on which the conductive wiring is to be formed. For example, tetrafluoromethane, perfluorohexane, perfluorodecane, etc. can be used as the treatment gas. Is described.

As described above, when a wiring or the like is formed by a method typified by the ink jet method, it is required to prevent the line width from being increased and to reduce the size. Therefore, an object of the present invention is to provide a method for reducing the line width by a method different from the above-mentioned patent document.

It is another object of the present invention to provide a method for forming a line width other than a wiring, for example, a semiconductor film, an insulating film, a mask, and the like by a method typified by an ink jet method and reducing the line width thereof.

In view of the above problems, the present invention forms a liquid-repellent region (liquid-repellent region) on the surface (formation surface) on which a pattern is formed before forming a desired pattern, and the liquid-repellent region In contrast, a region (lyophilic region) that is selectively lyophilic is formed. Thereafter, a pattern such as wiring is formed by a method (dropping method) of dropping a composition in which a conductive material such as wiring is mixed (including a composition in which a conductive material is dissolved or dispersed in a solvent) into a lyophilic region. Form. That is, the present invention is characterized in that a wiring or the like is formed in a selectively formed lyophilic region by a dropping method.

As means for dropping a composition mixed with a conductor material, there is a droplet discharge (inkjet) method. A piezo method can be used as the ink jet method. The piezo method is also used in inkjet printers because of its excellent droplet controllability and high degree of freedom in ink selection. There are two types of piezo systems: MLP (Multi Layer Piezo) type and MLChip (Multi Layer Ceramic Hyper Integrated Piezo Segments) type. Depending on the material of the solvent, an ink jet method using a so-called thermal method in which a heating element generates heat to generate bubbles to push out the solution may be used.

That is, according to the present invention, the surface to be formed is subjected to a liquid repellent treatment, the surface subjected to the liquid repellent treatment is selectively subjected to the lyophilic treatment, and then applied to the surface subjected to the lyophilic treatment by a dropping method. A wiring or the like is formed.

Liquid repellency refers to a state of low wettability with respect to other liquids such as water, alcohol and oil. The lyophilic property refers to a region where the liquid repellency is relatively low with respect to the liquid repellent region. This is because a region with relatively low liquid repellency can be formed, and wiring and the like can be formed in the region, and thinning can be achieved as the region becomes finer.

As a method for making the liquid repellency, a method of performing plasma treatment on a surface to be formed can be given. The plasma treatment is performed at a pressure of several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr (106400 Pa), that is, atmospheric pressure or near atmospheric pressure. Pressure. The processing gas uses air, oxygen or nitrogen as the processing gas. In such a state, a pulse voltage is applied to the electrodes to generate plasma. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge.

The present invention is characterized in that a dielectric is provided between an electrode used for plasma processing and an object (object to be processed) to be subjected to plasma processing. That is, the dielectric is exposed to plasma and is caused by the surface modification of the formation surface. In order to provide the dielectric so as to be exposed to the plasma, for example, an electrode provided with the dielectric may be prepared, and the plasma may be generated so that the dielectric is exposed to the plasma. Therefore, the dielectric does not need to cover the entire electrode surface. Teflon (registered trademark) can be used as the dielectric. When Teflon (registered trademark) is used, surface modification is performed by forming CF ₂ bonds on the surface to be formed, and liquid repellency is exhibited.

Further, as described in Patent Document 1, when a fluorine-based gas is used as a processing gas, it is difficult to perform surface modification on the surface of the semiconductor film. This is because if a fluorine-based gas is used, the semiconductor film containing silicon is removed. If a fluorine-based gas is used, it is difficult to perform surface modification on the surface of an organic material such as acrylic. This is because the fluorine-based gas damages or removes the surface of the organic material.

On the other hand, in the present invention, plasma treatment is performed using air, oxygen, or nitrogen. Therefore, the surface modification can be performed on the semiconductor film and the organic material regardless of the material of the formation surface, which is preferable. Further, since the processing gas is air, oxygen or nitrogen, the cost is low and the exhaust gas treatment is also simple.

In particular, plasma treatment using oxygen as a treatment gas is preferable because it can be used for removing a mask for patterning a semiconductor film or the like.

In the present invention, a specific pulse voltage is applied so that a damped oscillation wave is resonated as a damped oscillation wave as a damped oscillation waveform periodic wave that is intermittently repeatedly generated. For example, a pair of positive and negative pulses is supplied to the primary side of the high-voltage transformer at a repetition frequency, and a damped oscillation waveform periodic wave resonated with each damped oscillation wave is output from the secondary side of the high-voltage transformer and applied to the pair of electrodes. At this time, the voltage rise time of each damped oscillation wave resonated is preferably 5 μs or less. Moreover, it is preferable that the repetition period of the damped vibration wave is 10 to 100 kHz. The pulse is preferably 100 to 10,000 pps (10,000 times per second).

As another liquid repellent means, there is a method of forming a film having fluorine on the surface to be formed. For example, a film having Teflon (registered trademark) or a silane coupling agent is formed on the surface to be formed. A film having Teflon (registered trademark) (Teflon (registered trademark) film) can be formed by a sputtering method or a CVD method. The film having a silane coupling agent can be formed by applying by a spin coating method. The fluorine-containing film such as Teflon (registered trademark) or a silane coupling agent is preferably a monomolecular layer, that is, a film thickness of 5 nm or less. This is because when a thin film transistor is formed, a film containing fluorine is not necessary and can be easily removed. For example, the film containing fluorine can be removed by heat treatment or patterning treatment.

As a result of performing the liquid repellent treatment as described above, the surface of the conductive film is modified.

Thereafter, a lyophilic region is selectively formed. In order to form the lyophilic region, light irradiation may be performed. For example, the lyophilic region is formed by selectively irradiating laser light. The laser light preferably has a wavelength that is absorbed by the surface on which the lyophilic region is formed. Specifically, when a wiring or the like is formed on a glass substrate using a dropping method typified by an ink jet method, laser light having a wavelength in the ultraviolet region that is absorbed by the glass substrate on which the lyophilic region is formed. Use it.

As the laser light, laser light oscillated from a gas laser oscillator, a solid-state laser oscillator, a metal laser oscillator, or a semiconductor laser oscillator can be used. Specifically, Ar laser, Kr laser, excimer laser (XeCl, XeF, KrF), CO ₂ laser, YAG laser, Y ₂ O ₃ laser, YVO ₄ laser, YLE laser, YAlO ₃ laser, glass laser, ruby laser A sapphire laser or the like can be used.

Further, means for adjusting the beam shape of the laser light emitted from the laser oscillator or means for adjusting the beam path of the laser light can be provided between the laser oscillator and the object to be irradiated, that is, the surface to be formed. For example, a concave lens, a convex lens, a microlens array, a cylindrical lens array, or the like can be used as means for adjusting the beam shape of laser light emitted from a laser oscillator. Further, a mirror, a half mirror, and other reflectors can be used as means for adjusting the beam path of the laser light.

Further, laser light can be selectively irradiated using an optical pickup optical element or a fiber, so that a fine lyophilic region can be formed.

Also, laser light is not necessarily specialized only for coherent light generated by a laser oscillator, but is also the same as irradiating laser light with light emitted from UV lamps, halogen lamps, flash lamps, etc. The lyophilic region can be formed by a method. Moreover, you may perform the blow process which sprays ozone gas on a to-be-formed surface. Further, corona discharge or glow discharge may be performed on the surface to be formed.

Thereafter, a composition having a wiring material is dropped into the lyophilic region by a dropping method to form a wiring. As a result, the line width is reduced and miniaturization can be achieved. In addition, since the composition having the wiring material has high wettability with respect to the lyophilic region, even if it drops onto the lyophobic region slightly deviated from the lyophilic region, it moves to the lyophilic region. Therefore, it is possible to form a finer and more straight wiring. Further, since the wiring is formed in a lyophilic manner, it is possible to prevent a liquid pool that is formed on the wiring after the composition is dropped.

In the present invention, a wiring is formed by discharging a composition (including a composition in which a conductor is dissolved or dispersed in a solvent) in which a conductor (a material constituting the wiring) is mixed in a solvent by an inkjet method. Yes. In particular, when a wiring is formed by an inkjet method, a photolithography process such as exposure and development of a mask for patterning the wiring and an etching process for patterning the wiring can be omitted.

The step of discharging such a composition is preferably performed under reduced pressure. This is because the solvent of the composition evaporates and the steps of drying and firing the composition can be omitted before the composition is discharged and landed on the object to be processed. Furthermore, it is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor. The step of dropping the composition may be performed in a nitrogen atmosphere or an organic gas atmosphere.

At this time, the composition is ejected in the form of dots (droplets), or is ejected in the form of columns in which dots are connected. That is, since a plurality of dots are continuously ejected, they are not recognized as dots and may be ejected linearly. The discharge of the composition in the form of dots or columns like this is simply referred to as dots (droplets).

As the conductor, gold (Au), silver (Ag), copper (Cu), platinum (Pt), palladium (Pd), tungsten (W), nickel (Ni), tantalum (Ta), bismuth (Bi), Lead (Pb), indium (In), tin (Sn), zinc (Zn), titanium (Ti), or aluminum (Al), alloys made of these, dispersible nanoparticles, or silver halide fine particles Can be used. In particular, low resistance silver or copper may be used. However, in the case of using copper, it is necessary to form an insulating film containing nitrogen as a barrier film in order to prevent copper from diffusing into the semiconductor film or the like.

As transparent conductors, indium tin oxide (ITO), indium oxide mixed with 2-20% zinc oxide (ZnO), indium zinc oxide (IZO), indium oxide 2-20% ITO-SiOx mixed with silicon oxide (SiO ₂ ) (referred to as ITSO or NITO for convenience), organic indium, organic tin, titanium nitride (TiN), or the like can also be used.

In addition, the lyophilic process and the dropping of dots are performed in the same way by a droplet discharge device (inkjet device) in which a droplet discharge unit that discharges dots and a unit that performs light irradiation (light irradiation unit) are integrated. Can be done in the room. As a result, the manufacturing time can be shortened. Furthermore, a means for performing a liquid repellent treatment may be provided in the same processing chamber. Further, a multi-chamber apparatus may be formed in which a processing chamber for performing a liquid repellent treatment, a droplet discharge unit, and a light irradiation unit are provided and a processing chamber is installed. Furthermore, a multi-chamber apparatus may be provided in which a processing chamber for performing liquid repellency processing, a processing chamber for performing lyophilic processing, and a processing chamber for discharging dots are installed.

As described above, the present invention is characterized in that fine wiring is formed by a dropping method typified by an inkjet method, and the structure of the thin film transistor for forming the wiring is not limited. That is, it may be a thin film transistor having either a crystalline semiconductor film or an amorphous semiconductor film, a so-called bottom gate type in which a gate electrode is provided below the semiconductor film, and a so-called gate electrode provided above the semiconductor film. A thin film transistor having any structure of a top gate type may be used.

In addition, any of a gate electrode, a source electrode, a drain electrode, and a wiring connected to the electrodes included in the thin film transistor can be formed by a dropping method typified by an ink-jet method, is subjected to a liquid repellent treatment, and is selectively By carrying out the lyophilic treatment on the droplets and dropping the dots, it is possible to achieve miniaturization.

As described above, the formation of the wiring using the dots having the conductor has been described. However, in the present invention, for example, when a mask or the like is formed by a dropping method, a liquid repellent treatment and a selective lyophilic liquid are applied to the formation surface. Processing may be performed.

Therefore, the present invention is formed by a dropping method typified by the ink-jet method by forming at least a lyophobic surface selectively by forming a lyophobic surface while being formed by a dropping method typified by the ink-jet method. Can be miniaturized. What is formed by a dropping method typified by an ink jet method is for patterning gate electrodes, source electrodes, drain electrodes, electrodes such as pixel electrodes, wirings such as source wirings and drain wirings, semiconductor films, semiconductor films, etc. Mask.

That is, the present invention is characterized in that a liquid repellent treatment and a selective lyophilic treatment are performed when a dropping method typified by an inkjet method is used in at least one of the thin film transistor manufacturing steps. As a result, miniaturization can be achieved.

As described above, the present invention can form the liquid repellent region without depending on the material by using the plasma treatment using the treatment gas of air, oxygen or nitrogen. After that, by selectively forming a lyophilic region, a wiring formed by a dropping method typified by an ink jet method can be miniaturized. As a result, liquid repellent treatment and selective lyophilic treatment can be performed on all materials. Therefore, even a wiring formed on a substrate or a wiring formed on an insulating film can be miniaturized. Furthermore, since there is no material dependence, miniaturization of a mask or the like formed on the organic material can be achieved.

In the present invention, a liquid repellent treatment is performed on a surface to be formed and a lyophilic treatment is selectively performed in one step of forming a pattern such as a wiring or a mask by a dropping method typified by an ink jet method. It is characterized by. That is, the effect of the present invention is obtained in which the liquid repellent treatment is performed in the above-described step, the lyophilic treatment is selectively performed, and then the wiring, the mask, and the like formed by the dropping method typified by the ink jet method are miniaturized. be able to. Therefore, in the thin film transistor manufacturing process of the present invention, it is not always necessary to form a wiring by a dropping method typified by the ink jet method after performing a lyophilic process after a liquid repellent treatment, and a dropping method typified by the ink jet method. When it is necessary to form a finer pattern, the processing of the present invention may be performed.

Further, a line of glass substrates of the fifth and subsequent generations in which the mother glass substrate exceeds 1000 meters × 1300 mm, 1000 mm × 1500 mm, 1800 mm × 2200 mm or more is in progress. In this case, a large number of panels can be produced from the mother glass, and the panel price can be expected to decrease. Even in such a case, a production line capable of maintaining profitability can be constructed by using a dropping method typified by the inkjet method. This is because if a wiring or the like is formed by a dropping method typified by an ink jet method, the photo process can be simplified. As a result, a photomask becomes unnecessary, and it is possible to achieve a reduction in capital investment cost and a reduction in cost. Furthermore, since a photolithography process is unnecessary, manufacturing time can be shortened. In addition, when formed by a dropping method typified by an ink jet method, the utilization efficiency of the material is improved, and the cost can be reduced and the amount of waste liquid processed can be reduced. As described above, it is preferable to apply the dropping method typified by the ink jet method to a large-area substrate.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

In the following embodiments, an ink jet method is used as the dropping method. Unless otherwise specified, plasma treatment is used for liquid repellent treatment and laser irradiation is used for lyophilic treatment.

A TFT has three terminals, a gate, a source, and a drain. However, the source terminal (source electrode) and the drain terminal (drain electrode) cannot be clearly distinguished because of the structure of the transistor. Therefore, when describing connection between elements, one of a source electrode and a drain electrode is referred to as a first electrode, and the other is referred to as a second electrode.

(Embodiment 1)
In this embodiment, an example of a method for manufacturing a thin film transistor will be described.

First, as shown in FIG. 1A, a substrate 100 having an insulating surface is prepared. As the substrate 100, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a stainless steel substrate, or the like can be used. In addition, substrates made of plastics typified by polyethylene-terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and flexible synthetic resins such as acrylic are generally Although the heat resistant temperature tends to be lower than that of the substrate, it can be used as long as it can withstand the processing temperature in the manufacturing process. In particular, when a thin film transistor including an amorphous semiconductor film that does not require a heating step for crystallizing a semiconductor film is formed, a substrate made of a synthetic resin having flexibility is easily used.

Further, a base film is formed on the substrate 100 as necessary. The base film is provided to prevent alkali metal such as Na or alkaline earth metal contained in the substrate 100 from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element. Therefore, the base film can be formed using an insulating film such as silicon oxide, silicon nitride, silicon nitride oxide, titanium oxide, or titanium nitride that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film. Alternatively, the base film can be formed using a conductive film such as titanium. In this case, the conductive film may be oxidized by heat treatment or the like in the manufacturing process. In particular, the material of the base film is preferably selected from materials having high adhesion to the gate electrode material. For example, when Ag is used for the gate electrode, it is preferable to form a base film made of titanium oxide (TiOx). Note that the base film 101 may have a single-layer structure or a stacked structure.

The base film is not necessarily provided as long as impurities can be prevented from diffusing into the semiconductor film. Therefore, as in this embodiment, when a semiconductor film is formed over a gate electrode through a gate insulating film, the gate insulating film can function to prevent diffusion of impurities into the semiconductor film. There is no need to provide it.

Further, it may be preferable to provide a base film with a substrate material. In the case of using a substrate containing an alkali metal or an alkaline earth metal, such as a glass substrate, a stainless steel substrate, or a plastic substrate, it is effective to provide a base film from the viewpoint of preventing impurity diffusion. On the other hand, in the case where diffusion of impurities does not cause any problem such as a quartz substrate, it is not always necessary to provide a base film.

After that, plasma treatment is performed on the formation surface of the gate electrode. In this embodiment mode, since the formation surface of the gate electrode is a substrate, plasma treatment is performed on the substrate. The plasma treatment may be performed in a non-contact manner with respect to the formation surface of the gate electrode.

The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas under a pressure of several tens of Torr to 800 Torr (106400 Pa), preferably 700 Torr (93100 Pa) to 800 Torr (atmospheric pressure or pressure near atmospheric pressure). An RF power source or an AC power source can be used as a power source for plasma processing. For example, an AC power source is used and applied under conditions such as an AC voltage of 100 V and a frequency of 13.56 MHz, and plasma is generated by changing the power. At this time, in order to discharge stable plasma, pulses are applied at intervals of 2 to 4 μsec.

As a result of this plasma treatment, surface modification is performed so that the liquid repellency is low in wettability with respect to liquids such as water, alcohol and oil. That is, a liquid repellent region is formed by plasma treatment.

As shown in FIG. 1B, a lyophilic region is selectively formed with respect to the liquid repellent region. In this embodiment mode, the region where the gate electrode is formed is selectively irradiated with laser light, and the region where the gate electrode is formed is defined as a lyophilic region.

As shown in FIG. 1C, a conductive film functioning as the gate electrode 103 is formed by dropping a dot in which a conductor is mixed in a solvent into the lyophilic region by an inkjet method. In this embodiment, a dot in which a silver (Ag) conductor is dispersed in a tetradecane solvent is dropped. Since dots are dropped onto the selectively formed lyophilic region, the gate electrode formed by an inkjet method can be miniaturized.

Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry. Specifically, heating may be performed at a predetermined temperature, for example, 200 ° C. to 300 ° C., and heat treatment is preferably performed in an atmosphere containing oxygen. At this time, the heating temperature is set so that the gate electrode surface is not uneven. When using a dot containing silver (Ag) as in this embodiment, if heat treatment is performed in an atmosphere containing oxygen and nitrogen, organic substances such as a thermosetting resin such as an adhesive contained in the solvent are decomposed. Therefore, silver (Ag) which does not contain organic substances can be obtained. As a result, the flatness of the gate electrode surface can be improved and the specific resistance value can be lowered.

In addition to silver (Ag), the gate electrode can be formed of an element selected from tantalum, tungsten, titanium, molybdenum, aluminum, and copper, or an alloy material or compound material containing the element as a main component. The conductive film can be formed by a sputtering method or a plasma CVD method in addition to the ink jet method. As a conductive film formed by a sputtering method or a plasma CVD method, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy can be used.

As shown in FIG. 1D, an insulating film functioning as the gate insulating film 104 is formed so as to cover the gate electrode. The insulating film can have a stacked structure or a single layer structure. As the insulating film, an insulator such as silicon oxide, silicon nitride, or silicon nitride oxide can be formed by a plasma CVD method. Note that the gate insulating film may be formed by discharging dots mixed with an insulating film material by an inkjet method. In the case where silver (Ag) is used as a gate electrode as in this embodiment mode, a silicon nitride film is preferably used for the insulating film covering the gate electrode. This is because when an insulating film containing oxygen is used, it reacts with silver (Ag), silver oxide is formed, and the gate electrode surface may be roughened.

A semiconductor film 105 is formed over the gate insulating film. The semiconductor film can be formed by a plasma CVD method, a sputtering method, an ink jet method, or the like. The film thickness of the semiconductor film is 25 to 200 nm (preferably 30 to 60 nm). Further, not only silicon but also silicon germanium can be used as a material for the semiconductor film. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%. The semiconductor film is an amorphous semiconductor, a semi-amorphous semiconductor in which crystal grains are dispersed in the amorphous semiconductor, and a crystal grain of 0.5 nm to 20 nm in the amorphous semiconductor. It may have any state selected from microcrystalline semiconductors. Note that a microcrystalline state in which grains of 0.5 nm to 20 nm can be observed is called a so-called microcrystal (μc).

Semi-amorphous silicon (also referred to as SAS) using silicon as a semi-amorphous semiconductor material can be obtained by glow discharge decomposition of a silicide gas. A typical silicide gas is SiH ₄ , and in addition, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like can be used. The formation of the SAS can be facilitated by diluting the silicide gas with one or more kinds of rare gas elements selected from hydrogen, hydrogen and helium, argon, krypton, and neon. At this time, it is preferable to dilute the silicide gas so that the dilution rate is in the range of 10 to 1000 times. Further, the SAS can be formed by using Si ₂ H ₆ and GeF ₄ and diluting with helium gas. The reaction generation of the coating by glow discharge decomposition is preferably performed under reduced pressure, and the pressure may be in the range of about 0.1 Pa to 133 Pa. The power for forming the glow discharge may be high frequency power of 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature is preferably 300 ° C. or less, and a substrate heating temperature of 100 to 250 ° C. is recommended.

In this embodiment, an amorphous semiconductor film containing silicon as a main component (also referred to as an amorphous silicon film or amorphous silicon) is formed by a plasma CVD method.

Next, a semiconductor film having one conductivity type is formed. The semiconductor film having one conductivity type can be formed by a plasma CVD method, a sputtering method, an ink jet method, or the like. Note that in the case where a semiconductor film having one conductivity type is provided, the contact resistance between the semiconductor film and the electrode is preferably reduced, but may be provided as necessary. In this embodiment, the N-type semiconductor film 106 is formed by a plasma CVD method. When a semiconductor film having an N-type semiconductor and a semiconductor film is formed by the plasma CVD method in this manner, it is preferable to continuously form the semiconductor film 105, the N-type semiconductor film 106, and the gate insulating film. By doing so, it can be continuously formed without opening to the atmosphere.

As shown in FIG. 1E, the semiconductor film 105 and the N-type semiconductor film 106 are patterned into a desired shape. Although not shown, a mask may be formed at a desired location and etched using the mask. The mask is preferably formed by an ink jet method because it improves material utilization efficiency, reduces costs, and reduces the amount of waste liquid, but may be formed by a photolithography method. Further, when a mask is formed by an inkjet method, the photolithography process can be simplified. That is, photomask formation, exposure, and the like are not required, a reduction in equipment investment cost can be achieved, and manufacturing time can be reduced. In the case where a mask is formed by an inkjet method, plasma treatment may be performed on a surface on which the mask is formed to form a liquid repellent region, and the mask may be formed in the liquid repellent region. In addition, a lyophilic region may be formed by selectively irradiating laser light, and then a mask may be formed in the lyophilic region. As a result, the mask formed by the inkjet method can be miniaturized.

Inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.) and photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, polyvinyl alcohol, resist or benzocyclobutene) are used as mask materials. Can do. For example, in the case where a mask is formed using an inkjet method using polyimide, heat treatment may be performed at 150 to 300 ° C. for firing after discharging polyimide to a desired portion by an inkjet method. After that, the semiconductor film 105 and the N-type semiconductor film 106 are etched using a mask. After the etching, plasma treatment is performed to remove the mask. Note that a mask formed by an inkjet method may be functioned as an insulating film without being removed.

Then, plasma treatment may be performed on the formation surfaces of the source electrode and the drain electrode. In this embodiment mode, plasma treatment is preferably performed on an N-type semiconductor film which is a surface over which a source electrode and a drain electrode are formed, and a gate insulating film. The plasma treatment may be performed in a non-contact manner on the formation surfaces of the source electrode and the drain electrode. As a result of this plasma treatment, surface modification is performed so that the liquid repellency is low in wettability with respect to liquids such as water, alcohol and oil. That is, a liquid repellent region is formed by plasma treatment. As a result, the source electrode and the drain electrode can be miniaturized.

As shown in FIG. 1F, a conductive film functioning as the source and drain electrodes 108 is formed. The conductive film may have either a single layer structure or a stacked structure. As the conductive film, a film made of gold, silver, copper, aluminum, titanium, molybdenum, tungsten, or silicon or an alloy film using these elements can be used. In addition, the conductive film can be formed using any one of an inkjet method, a CVD method, and a sputtering method. In this embodiment mode, a dot mixed with silver (Ag) is formed by an inkjet method. Specifically, it may be performed in the same manner as the gate electrode shown in FIG. Since dots are dropped in the plasma-treated region, the source electrode and the drain electrode formed by an ink jet method can be miniaturized.

In addition, as shown in FIG. 2, when the source electrode and the drain electrode are miniaturized, a lyophilic region may be selectively formed with respect to the liquid repellent region. For example, as shown in FIG. 2A, plasma treatment is performed on an N-type semiconductor film, which is a surface where a source electrode and a drain electrode are formed, and a gate insulating film, and then, FIG. As shown, a lyophilic region is formed by selectively irradiating laser light. After that, as shown in FIG. 2C, dots are dropped on the lyophilic region to form the source and drain electrodes 108. As a result, the line width of the source electrode and the drain electrode formed by the inkjet method can be further reduced.

As described above, in the process of forming electrodes, wirings, and the like that are desired to be miniaturized, a liquid repellent process such as a plasma process can be performed, or in addition, a lyophilic process can be selectively performed. As a result, the electrodes, wirings, etc. can be miniaturized.

After dripping the dots for the source electrode and the drain electrode, when it is necessary to remove the solvent of the dots, a heat treatment is performed for baking or drying.

After that, the n-type semiconductor film 106 is etched using the source electrode and the drain electrode as a mask. This is for preventing the source electrode and the drain electrode from being short-circuited by the N-type semiconductor film. At this time, the semiconductor film 105 may be slightly etched.

As described above, the thin film transistor provided with the source electrode and the drain electrode is completed. The thin film transistor in this embodiment is a so-called bottom gate thin film transistor in which a gate electrode is provided below a semiconductor film. More specifically, it is a so-called channel etch type in which the semiconductor film is slightly etched. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

In addition, the thin film transistor described in this embodiment is characterized in that liquid repellent treatment and selective lyophilic treatment are performed at least one step before forming a conductive film by an ink jet method. The liquid repellent treatment and the selective lyophilic treatment are performed before forming the gate electrode, the source electrode, and the drain electrode by the inkjet method, but the liquid repellent treatment and the selective parent treatment are performed before the ink jet process that is at least one step. Liquid treatment may be performed. Therefore, liquid repellent treatment and selective lyophilic treatment may be performed before the steps other than those shown in this embodiment mode.

Further, the present invention may be combined with a method for miniaturizing the wiring and the like by performing a liquid repellent treatment such as a plasma treatment. That is, the step of forming the wiring or the like by the ink jet method after performing the liquid repellent treatment and the selective lyophilic treatment may be combined with the step of forming the wiring or the like by the ink jet method after performing only the liquid repellent treatment. .

As described above, a thinned thin film transistor having a gate electrode, a source electrode, and a drain electrode can be obtained by a liquid repellent process and a selective lyophilic process before an ink jet process. Furthermore, even when the dots are ejected with a slight shift, wiring can be formed in the lyophilic region, and accurate position control of wiring formation is possible.

In addition, when a wiring, a mask, or the like is formed by the ink jet method, the material utilization efficiency is improved, and the cost can be reduced and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

(Embodiment 2)
In this embodiment, a method for manufacturing a thin film transistor having a structure different from that in Embodiment 1 will be described. A structure different from that in Embodiment Mode 1 is that a protective film is formed over the semiconductor film. Therefore, Embodiment 1 may be referred to for other manufacturing methods, and detailed description thereof is omitted.

As shown in FIG. 3A, plasma treatment is performed on the substrate 100 having an insulating surface. Further, a base film may be formed on the substrate 100 as necessary. As a result of this plasma treatment, surface modification is performed so that the liquid repellency is low in wettability with respect to liquids such as water, alcohol and oil. That is, a liquid repellent region is formed by plasma treatment.

Thereafter, as shown in FIG. 3B, a lyophilic region is selectively formed with respect to the liquid repellent region. In this embodiment mode, a region where the gate electrode is formed is lyophilic by selectively irradiating the region where the gate electrode is formed with laser light.

As shown in FIG. 3C, a gate electrode 103 is formed over a base film, a gate insulating film 104 is formed to cover the gate electrode, and a semiconductor film 105 is formed over the gate insulating film. As a result of performing the liquid repellent treatment and the selective lyophilic treatment, the gate electrode formed by the ink jet method can be miniaturized. Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry.

Thereafter, the protective film 110 is formed over the semiconductor film. As the protective film, an insulating film such as silicon oxide, silicon nitride, or silicon nitride oxide is formed by an inkjet method, a plasma CVD method, a sputtering method, or the like. In addition, a semiconductor film, a protective film, and a gate insulating film are preferably formed continuously. By changing the supply of the source gas in the same chamber, it can be continuously formed without opening to the atmosphere.

Further, when the protective film is formed by the ink jet method, the material utilization efficiency is improved, and the cost and the amount of waste liquid can be reduced. When a protective film is formed by an ink jet method, the photolithography process can be simplified. As a result, a photomask becomes unnecessary, and it is possible to achieve a reduction in capital investment cost and a reduction in cost. In addition, since a photolithography process is not required, manufacturing time can be shortened. At this time, plasma treatment may be performed on the surface where the protective film is formed to form a liquid-repellent region, and the protective film may be formed in the liquid-repellent region. In addition, a lyophilic region may be selectively formed with respect to the lyophobic region, and a protective film may be formed in the lyophilic region. As a result, the protective film formed by the inkjet method can be miniaturized. In this embodiment mode, the protective film 110 is formed by dropping polyimide, polyvinyl alcohol, or the like using an inkjet method.

When it is necessary to pattern the protective film into a desired shape, patterning is performed using a mask. At this time, the protective film can be etched in a self-aligned manner by exposing from the back surface of the substrate using the gate electrode as a mask. Of course, the mask may be formed by a photolithography method or an inkjet method. In the case of forming a mask by an inkjet method, a liquid repellent region may be formed by performing plasma treatment on a surface on which the mask is formed. In addition, a lyophilic region may be selectively formed with respect to the liquid repellent region. As a result, the mask formed by the inkjet method can be miniaturized.

As shown in FIG. 3D, a semiconductor film having one conductivity type is formed. In this embodiment, the N-type semiconductor film 106 is formed by a plasma CVD method.

As shown in FIG. 3E, the N-type semiconductor film and the semiconductor film are patterned into a desired shape. In this case, although not shown, a mask may be formed at a desired location and etched using the mask. The mask is preferably formed by an ink jet method because it improves material utilization efficiency, reduces costs, and reduces the amount of waste liquid, but may be formed by a photolithography method. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time. In this embodiment mode, polyimide or polyvinyl alcohol or the like is dropped using an inkjet method as a mask. At this time, the liquid repellent treatment may be performed by performing plasma treatment on the surface on which the mask is formed. In addition, a lyophilic region may be selectively formed with respect to the liquid repellent region. As a result, the mask formed by the inkjet method can be miniaturized.

After the etching, plasma treatment is performed to remove the mask. Note that a mask formed by an inkjet method may be functioned as an insulating film without being removed.

Then, similarly to FIG. 1E, plasma treatment is performed on the formation surfaces of the source electrode and the drain electrode. In this embodiment mode, plasma treatment is performed on an N-type semiconductor film, which is a surface where a source electrode and a drain electrode are formed, and a gate insulating film. The plasma treatment may be performed in a non-contact manner on the formation surfaces of the source electrode and the drain electrode. As a result of this plasma treatment, surface modification is performed so that the liquid repellency is low in wettability with respect to liquids such as water, alcohol and oil. That is, the liquid repellent treatment is performed by plasma treatment. Thereafter, a lyophilic process is selectively performed on the liquid repellent area.

As shown in FIG. 3F, a conductive film functioning as the source and drain electrodes 108 is formed. In this embodiment mode, a dot mixed with silver (Ag) is formed by an inkjet method. As a result of performing the liquid repellent treatment and the selective lyophilic treatment, the source electrode and the drain electrode formed by the ink jet method can be miniaturized. Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry.

As described above, the thin film transistor provided with the source electrode and the drain electrode is completed. The thin film transistor in this embodiment is a so-called bottom gate thin film transistor in which a gate electrode is provided below a semiconductor film. More specifically, it is a so-called channel protection type in which the semiconductor film is not etched. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

In addition, the thin film transistor thus formed is characterized by performing a liquid repellent treatment and a selective lyophilic treatment before forming a conductive film by an inkjet method. In this embodiment, the liquid repellent treatment and the selective lyophilic treatment are performed before forming the gate electrode, the source electrode, and the drain electrode by the ink jet method, but the liquid repellent treatment is performed before at least one ink jet process. Selective lyophilic treatment may be performed. Therefore, liquid repellency treatment and selective lyophilic treatment may be performed at any time before the ink jet process even if other than those shown in this embodiment mode.

As described above, a thinned thin film transistor having a gate electrode, a source electrode, and a drain electrode can be obtained by a liquid repellent process and a selective lyophilic process before an ink jet process. Furthermore, even when the dots are ejected with a slight shift, wiring can be formed in the lyophilic region, and accurate position control of wiring formation is possible.

In addition, when a wiring, a mask, or the like is formed by the ink jet method, the material utilization efficiency is improved, and the cost can be reduced and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

(Embodiment 3)
Unlike the structures shown in Embodiments 1 and 2, this embodiment is a so-called top-gate thin film transistor in which a gate electrode is provided above a semiconductor film. Therefore, for other manufacturing methods, Embodiment Modes 1 and 2 may be referred to and detailed description thereof is omitted.

As shown in FIG. 4A, a base film 101 is formed over a substrate 100 having an insulating surface. After that, a conductive film to be the source and drain electrodes 108 and a semiconductor film having one conductivity type are sequentially formed. In this embodiment, an N-type semiconductor film 106 is used as the semiconductor film having one conductivity type. After forming a conductive film to be a source electrode and a drain electrode and an N-type semiconductor film, patterning is performed using a mask into a desired shape. Although not shown, the mask can be formed by an inkjet method or a photolithography method. This is because when the mask is formed by the ink jet method, the utilization efficiency of the material is improved, and the cost and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time. In the case of forming a mask by an inkjet method, a liquid repellent region may be formed by performing plasma treatment on a surface on which the mask is formed. In addition, a lyophilic region may be selectively formed with respect to the liquid repellent region. As a result, the mask formed by the inkjet method can be miniaturized. In this embodiment mode, polyimide, polyvinyl alcohol, or the like is dropped using an inkjet method as a mask. Thereafter, heating is performed as necessary, baking is performed, and patterning is performed using a dry etching method.

After the patterning, plasma treatment is performed to remove the mask. Note that a mask formed by an inkjet method may be functioned as an insulating film without being removed.

As shown in FIG. 4B, the semiconductor film 105 is formed so as to cover the N-type semiconductor film. A mask 112 is formed over the semiconductor film 105. The mask 112 can be formed by an inkjet method or a photolithography method. In this embodiment mode, polyimide, polyvinyl alcohol, or the like is dropped using an inkjet method as a mask. If necessary, the mask formed by the ink jet method is heated and baked. Note that at this time, the liquid-repellent region may be formed by performing plasma treatment on the semiconductor film 105. In addition, a lyophilic region may be selectively formed with respect to the liquid repellent region. As a result, the mask formed by the inkjet method can be miniaturized.

Thereafter, the semiconductor film 105 is patterned into a desired shape using a mask. At the same time, the N-type semiconductor film can be patterned. That is, when the semiconductor film 105 and the N-type semiconductor film 106 have the same etch rate with respect to the same gas, they are simultaneously patterned.

After the patterning, plasma treatment is performed to remove the mask 112. Note that a mask formed by an inkjet method may be functioned as an insulating film without being removed.

As shown in FIG. 4C, an insulating film functioning as the gate insulating film 104 is formed so as to cover the semiconductor film 105. The gate insulating film may be formed at least between the semiconductor film and the gate electrode to be formed later. After that, plasma treatment is performed on the gate insulating film 104. As a result of this plasma treatment, surface modification is performed so that the liquid repellency is low in wettability with respect to liquids such as water, alcohol and oil. That is, the liquid repellent treatment is performed by plasma treatment.

As shown in FIG. 4D, the lyophilic treatment is performed by selectively irradiating the liquid-repellent region with laser light. In this embodiment mode, a region where a gate electrode is formed is selectively set as a lyophilic region.

As shown in FIG. 4E, a conductive film functioning as the gate electrode 103 is formed over the semiconductor film with the gate insulating film interposed therebetween. In this embodiment, a dot in which a silver (Ag) conductor is dispersed in a tetradecane solvent is dropped. As a result of performing the liquid repellent treatment and the selective lyophilic treatment, the gate electrode formed by the ink jet method can be miniaturized. Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry.

Thus, a thin film transistor that is formed up to the gate electrode and functions as a semiconductor element is completed. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

As shown in FIG. 4F, a protective film 113 is preferably formed so as to cover at least the gate electrode. The protective film may have a laminated structure or a single layer structure. As the protective film, an insulator such as silicon oxide, silicon nitride, or silicon nitride oxide can be formed by a plasma CVD method. Note that the protective film may be formed by discharging dots mixed with an insulating film material by an inkjet method. In the case where silver (Ag) is used as the gate electrode as in this embodiment mode, it is preferable to use a silicon nitride film for the protective film covering the gate electrode. This is because when a protective film containing oxygen is used, it reacts with silver (Ag) to form silver oxide and roughen the gate electrode surface.

The thin film transistor of this embodiment is a so-called top gate thin film transistor in which a gate electrode is provided above a semiconductor film.

A thin film transistor formed as in this embodiment is characterized in that a liquid repellent treatment and a selective lyophilic treatment are performed before a conductive film is formed by an inkjet method. In this embodiment, the liquid repellent treatment and the selective lyophilic treatment are performed before forming the gate electrode by the ink jet method, but the liquid repellent treatment and the selective lyophilic treatment are performed before at least one ink jet process. Just do it. Therefore, liquid repellency treatment and selective lyophilic treatment may be performed at any time before the ink jet process even if other than those shown in this embodiment mode.

As described above, a thin film transistor having a miniaturized gate electrode can be obtained by a liquid repellent process and a selective lyophilic process before an ink jet process. Furthermore, even when the dots are ejected with a slight shift, wiring can be formed in the lyophilic region, and accurate position control of wiring formation is possible.

In addition, when a wiring, a mask, or the like is formed by the ink jet method, the material utilization efficiency is improved, and the cost can be reduced and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

(Embodiment 4)
In this embodiment, a method for manufacturing a thin film transistor having a structure different from that in Embodiment 3 will be described. A structure different from that in Embodiment 3 is that a source electrode and a drain electrode are formed by an inkjet method. Therefore, for other manufacturing methods, Embodiment Mode 3 and the like may be referred to, and detailed description thereof is omitted.

As shown in FIG. 5A, a base film 101 is formed over a substrate 100 having an insulating surface. Then, plasma treatment is performed on the base film 101. As a result of this plasma treatment, surface modification is performed so that the liquid repellency is low in wettability with respect to liquids such as water, alcohol and oil. That is, the liquid repellent treatment is performed by plasma treatment.

As shown in FIG. 5B, the lyophilic treatment is performed by selectively irradiating the liquid-repellent region with laser light. In this embodiment mode, laser light irradiation is selectively performed on a region where a source electrode and a drain electrode are formed to form a lyophilic region.

As shown in FIG. 5C, a source electrode and a drain electrode are formed by an inkjet method. In this embodiment, a dot in which a silver (Ag) conductor is dispersed in a tetradecane solvent is dropped. As a result of performing the liquid repellent treatment and the selective lyophilic treatment, the source electrode and the drain electrode formed by the ink jet method can be miniaturized. Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry.

As shown in FIG. 5D, a semiconductor film having one conductivity type is formed so as to cover the source electrode and the drain electrode. In this embodiment mode, an N-type semiconductor film 106 is used as the semiconductor film having one conductivity type. In addition, an N-type semiconductor film covering the source electrode and the drain electrode is etched to prevent a short circuit. For example, an N-type semiconductor film between the source electrode and the drain electrode is etched by a dry etching method using a mask.

As shown in FIG. 5E, a semiconductor film 105 is formed so as to cover the N-type semiconductor film. Next, the semiconductor film 105 is patterned using a mask. At the same time, the N-type semiconductor film may be patterned. That is, when the semiconductor film 105 and the N-type semiconductor film 106 have the same etch rate with respect to the same gas, they are simultaneously patterned. The mask can be formed by an inkjet method or a photolithography method. Although not illustrated, in this embodiment mode, polyimide, polyvinyl alcohol, or the like is dropped using an inkjet method as a mask. What is necessary is just to pattern by using a dry etching method, heating and baking as needed. Note that at this time, the liquid-repellent region may be formed by performing plasma treatment on the semiconductor film 105. In addition, a lyophilic region may be selectively formed with respect to the liquid repellent region. As a result, the mask formed by the inkjet method can be miniaturized.

After the patterning, plasma treatment is performed to remove the mask. Note that a mask formed by an inkjet method may be functioned as an insulating film without being removed.

After that, an insulating film functioning as the gate insulating film 104 is formed so as to cover the semiconductor film. Then, plasma treatment is performed on the gate insulating film 104. As a result of this plasma treatment, surface modification is performed so that the liquid repellency is low in wettability with respect to liquids such as water, alcohol and oil. That is, the liquid repellent treatment is performed by plasma treatment. Thereafter, the lyophilic process is performed by selectively irradiating the liquid repellent region with laser light.

As shown in FIG. 5F, a conductive film functioning as the gate electrode 103 is formed over the semiconductor film with the gate insulating film interposed therebetween. In this embodiment, a dot in which a silver (Ag) conductor is dispersed in a tetradecane solvent is dropped. As a result of the liquid repellent treatment and the selective lyophilic treatment, the gate electrode formed by the ink jet method can be miniaturized. Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry.

Thus, a thin film transistor functioning as a semiconductor element formed up to the gate electrode is completed. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

Next, it is preferable to form the protective film 113 so as to cover at least the gate electrode. The protective film may have a laminated structure or a single layer structure. As the protective film, an insulator such as silicon oxide, silicon nitride, or silicon nitride oxide can be formed by a plasma CVD method. Note that the protective film may be formed by discharging dots mixed with an insulating film material by an inkjet method. In the case where silver (Ag) is used as the gate electrode as in this embodiment mode, it is preferable to use a silicon nitride film for the protective film covering the gate electrode. This is because when a protective film containing oxygen is used, it reacts with silver (Ag) to form silver oxide and roughen the gate electrode surface.

The thin film transistor of this embodiment is a so-called top gate thin film transistor in which a gate electrode is provided above a semiconductor film.

In addition, the thin film transistor thus formed is characterized by performing a liquid repellent treatment and a selective lyophilic treatment before forming a conductive film by an inkjet method. In this embodiment mode, the liquid repellent treatment and the selective lyophilic treatment are performed before the source electrode, the drain electrode, and the gate electrode are formed by the ink jet method, but the liquid repellent treatment is performed before at least one ink jet process. Selective lyophilic treatment may be performed. Therefore, liquid repellency treatment and selective lyophilic treatment may be performed at any time before the ink jet process even if other than those shown in this embodiment mode.

As described above, a thin film transistor having a miniaturized source electrode, drain electrode, and gate electrode can be obtained by a liquid repellent process and a selective lyophilic process before an ink jet process. Furthermore, even when the dots are ejected with a slight shift, wiring can be formed in the lyophilic region, and accurate position control of wiring formation is possible.

In addition, when a wiring, a mask, or the like is formed by the ink jet method, the material utilization efficiency is improved, and the cost can be reduced and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

(Embodiment 5)
In this embodiment, the case where a thin film transistor using a crystalline semiconductor film is formed is described.

As shown in FIG. 18A, a base film 101 is formed over a substrate 100 having an insulating surface. The base film 101 may have a stacked structure, and in this embodiment mode, a plasma CVD method is used. As the first base film 101a, a plasma CVD method is used, and SiH ₄ , N ₂ O, NH is used as a source gas. ₃ and H ₂ , a pressure of 0.3 Torr (39.9 Pa), an RF power of 50 W, an RF frequency of 60 MHz, and a substrate temperature of 400 ° C., a silicon oxynitride film formed at 10 to 200 nm (preferably 50 to 200 nm), As the second base film 101b, a plasma CVD method is used, the source gas is SiH ₄ , N ₂ O, the pressure is 0.3 Torr (39.9 Pa), the RF power is 150 W, the RF frequency is 60 MHz, and the substrate temperature is 400 ° C. Are stacked in the order of 50 to 200 nm (preferably 200 to 150 nm).

An amorphous semiconductor film is formed over the base film 101. The thickness of the amorphous semiconductor film is 25 to 100 nm (preferably 30 to 60 nm). As the amorphous semiconductor, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%. In this embodiment mode, a semiconductor film containing 66 nm silicon as a main component (also referred to as an amorphous silicon film or amorphous silicon) is used.

Next, the amorphous semiconductor film is crystallized to form a crystalline semiconductor film. As a means for crystallization, a method of heating by adding a metal element that promotes crystallization of an amorphous semiconductor film can be used. As the metal element, one or more selected from Ni, Fe, Co, Pd, Pt, Cu, Au, Ag, In, and Sn can be used. Forming a metal element is preferable because it can be crystallized at a low temperature. However, a step of removing the metal element, that is, a so-called gettering step is required.

In addition, the amorphous semiconductor film may be irradiated with laser light. A continuous wave laser (CW laser) or a pulsed laser (pulse laser) can be used. Lasers include Ar laser, Kr laser, excimer laser, YAG laser, Y ₂ O ₃ laser, YVO ₄ laser, YLF laser, YalO ₃ laser, glass laser, ruby laser, alexandride laser, Ti: sapphire laser, copper vapor laser Alternatively, one or a plurality of gold vapor lasers can be used.

For example, a Ni solution (including an aqueous solution and an acetic acid solution) is applied to the amorphous semiconductor film by a coating method such as a spin coating method or a dip method, or an inkjet method. At this time, in order to improve the wettability of the surface of the amorphous semiconductor film and spread the solution over the entire surface of the amorphous semiconductor film, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, ozone containing hydroxy radicals It is desirable to form an oxide film with a thickness of 1 to 5 nm by treatment with water or hydrogen peroxide. Alternatively, Ni ions may be implanted into the amorphous semiconductor film by an ion implantation method, heated in a water vapor atmosphere containing Ni, or sputtered with Ar plasma using a target as a Ni material. In this embodiment, an aqueous solution containing 10 ppm of Ni acetate is applied by a spin coating method.

Thereafter, the amorphous semiconductor is heat-treated at 500 to 550 ° C. for 2 to 20 hours to crystallize the amorphous semiconductor film and form a crystalline semiconductor film. At this time, it is preferable to gradually change the heating temperature. This is because hydrogen or the like of the amorphous semiconductor film comes out in the first low-temperature heating step, so that so-called hydrogen extraction can be performed to reduce film roughness during crystallization. Alternatively, a magnetic field may be applied to crystallize the magnetic energy and high-power microwaves may be used. In this embodiment, heat treatment is performed at 550 ° C. for 4 hours after heat treatment at 500 ° C. for 1 hour using a vertical furnace.

Then, the crystalline semiconductor film is patterned to form an island-shaped semiconductor film 502.

An insulating film functioning as the gate insulating film 104 is formed so as to cover the island-shaped semiconductor film 502. The above-described insulating film can be used for the gate insulating film. In the embodiment, TiO ₂ is used for the gate insulating film.

As shown in FIG. 18B, plasma treatment is performed on the formation surface of the gate electrode. In this embodiment mode, plasma treatment is performed on a gate insulating film which is a formation surface of a gate electrode. The plasma treatment may be performed in a non-contact manner with respect to the formation surface of the gate electrode. As a result of this plasma treatment, surface modification is performed so that the liquid repellency is low in wettability with respect to liquids such as water, alcohol and oil. That is, a liquid repellent region is formed by plasma treatment.

As shown in FIG. 18C, a lyophilic region is selectively formed with respect to the liquid repellent region. In this embodiment mode, the region where the gate electrode is formed is selectively irradiated with laser light, and the region where the gate electrode is formed is defined as a lyophilic region.

As shown in FIG. 18D, a conductive film functioning as the gate electrode 103 is formed by dropping a dot in which a conductor is mixed in a solvent into the lyophilic region using an inkjet method. In this embodiment, a dot in which a silver (Ag) conductor is dispersed in a tetradecane solvent is dropped. Since dots are dropped onto the selectively formed lyophilic region, the gate electrode formed by an inkjet method can be miniaturized.

Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry. Specifically, heating may be performed at a predetermined temperature, for example, 200 ° C. to 300 ° C., and heat treatment is preferably performed in an atmosphere containing oxygen. At this time, the heating temperature is set so that the gate electrode surface is not uneven. When using a dot containing silver (Ag) as in this embodiment, if heat treatment is performed in an atmosphere containing oxygen and nitrogen, organic substances such as a thermosetting resin such as an adhesive contained in the solvent are decomposed. Therefore, silver (Ag) which does not contain organic substances can be obtained. As a result, the flatness of the gate electrode surface can be improved and the specific resistance value can be lowered.

In addition to silver (Ag), the gate electrode can be formed of an element selected from tantalum, tungsten, titanium, molybdenum, aluminum, and copper, or an alloy material or compound material containing the element as a main component. The conductive film can be formed by a sputtering method or a plasma CVD method in addition to the ink jet method. As a conductive film formed by a sputtering method or a plasma CVD method, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy can be used.

After that, an impurity element is added in a self-aligning manner using the gate electrode 103. For example, phosphorus (P) is added to a semiconductor film to be an N-channel thin film transistor, and boron (B) is added to a semiconductor film to be a p-channel thin film transistor.

As described above, the thin film transistor formed up to the impurity region is completed. The thin film transistor of this embodiment is a crystalline thin film transistor including a crystalline semiconductor film, and is a so-called top gate thin film transistor in which a gate electrode is provided above the semiconductor film. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

After that, as shown in FIG. 18E, an insulating film 507 containing nitrogen is formed so as to cover the gate electrode 103. In this embodiment, the insulating film 507 can also be formed by an inkjet method. After that, dangling bonds in the semiconductor film can be reduced by heating with the insulating film 507 provided.

The thin film transistor thus formed is characterized in that a liquid repellent treatment and a selective lyophilic treatment are performed before forming a conductive film by an ink jet method. In this embodiment mode, the liquid repellent treatment and the selective lyophilic treatment are performed before the source electrode, the drain electrode, and the gate electrode are formed by the ink jet method, but the liquid repellent treatment is performed before at least one ink jet process. Selective lyophilic treatment may be performed. Therefore, liquid repellency treatment and selective lyophilic treatment may be performed at any time before the ink jet process even if other than those shown in this embodiment mode.

As described above, a thin film transistor having a miniaturized source electrode, drain electrode, and gate electrode can be obtained by a liquid repellent process and a selective lyophilic process before an ink jet process. Furthermore, even when the dots are ejected with a slight shift, wiring can be formed in the lyophilic region, and accurate position control of wiring formation is possible.

In addition, when a wiring, a mask, or the like is formed by the ink jet method, the material utilization efficiency is improved, and the cost can be reduced and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

(Embodiment 6)
In this embodiment, an apparatus for performing plasma treatment is described.

As shown in FIG. 15A, an electrode 403 in a treatment chamber 401, a dielectric 404 formed so as to cover the electrode surface, a power source 402 connected to the electrode, a surface on which plasma treatment is performed (surface to be treated) ) And a stage 407 for fixing the substrate. In this embodiment, Teflon (registered trademark) is used as a dielectric. Note that the electrode 403 and the power source 402 together correspond to plasma processing means. In this embodiment mode, the parallel plate electrode 403 is used to generate plasma, but a known method may be used. For example, plasma can be generated using microwaves or electromagnetic induction.

Note that in this embodiment mode, the dielectric is formed so as to cover the electrode surface; however, the dielectric may be provided so as to be exposed to plasma generated at least between the object to be processed and the electrode. For example, a dielectric may be provided between the object to be processed and the electrode.

A substrate having a surface to be processed for plasma processing is placed on a stage, and a pulse voltage is applied from a power source. Then, plasma is generated between the electrode and the substrate. The plasma density of the plasma is 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ . At this time, the pressure in the processing chamber is several tens Torr to 800 Torr (106400 Pa), preferably 700 Torr (93100 Pa) to 800 Torr (atmospheric pressure or pressure near atmospheric pressure), and discharge is performed using a pulse voltage. In this embodiment mode, a pulse voltage is applied in order to generate stable plasma at atmospheric pressure or a pressure near atmospheric pressure. Air, oxygen, or nitrogen is used as a processing gas in this plasma processing.

Specifically, the applied voltage is resonated like a damped vibration wave as a damped vibration waveform periodic wave in which the damped vibration wave is intermittently repeated. A pair of positive and negative pulses is supplied to the primary side of the high-voltage transformer at a repetition frequency, and a damped oscillation waveform periodic wave resonated with each damped oscillation wave is output from the secondary side of the high-voltage transformer and applied to the pair of electrodes. At this time, the voltage rise time of each damped oscillation wave resonated is preferably 5 μs or less. Moreover, it is preferable that the repetition period of the damped vibration wave is 10 to 100 kHz. The pulse is preferably 100 to 10,000 pps (10000 times per second).

As a result of performing the plasma treatment, the surface of the conductive film is modified. Specifically, when Teflon (registered trademark) is attached to the electrode surface, a CF ₂ bond is formed on the formation surface of the conductive film. Specific changes in the CF ₂ bonding state before and after the plasma treatment are shown in the examples. As a result, the surface to be treated exhibits liquid repellency. After that, when a wiring or the like is formed, the line width is reduced and miniaturization can be achieved.

Thus, preferably, when the plasma treatment is performed at or near atmospheric pressure, the plasma treatment can be easily performed without evacuation. As a result, the manufacturing time of the thin film transistor can be significantly shortened. Of course, the plasma treatment may be performed in a vacuum.

In addition, a processing chamber having a plasma processing means for performing plasma processing and a processing chamber for performing an ink jet process are provided in close contact with each other, and a substrate having a processing surface (object to be processed) is conveyed without being exposed to the atmosphere. A so-called multi-chamber that can be formed may be formed. In particular, when the plasma treatment and the inkjet process are performed in a vacuum, a substrate having a surface to be processed can be transported without being exposed to the atmosphere, and thus a multi-chamber is preferable.

In addition, since plasma treatment can be performed at or near atmospheric pressure, the treatment may not be performed in the treatment chamber as illustrated in FIG.

In FIG. 15B, a single-axis robot 410 for X-axis and a single-axis robot 411 for Y-axis are provided, and a stage 407 is provided on one of the robots. A substrate 406 having a surface to be processed is disposed on the stage. The power source 403 has a cylindrical shape, and a dielectric 404 covers the periphery. In this embodiment, Teflon (registered trademark) is used as a dielectric. Since other plasma conditions and the like are as described above, description thereof is omitted.

When performing plasma treatment, the electrode and the substrate are relatively moved. When the substrate is larger than the electrode, the electrode and the substrate may be moved relatively while moving in a rectangular shape. Alternatively, the substrate may be rotated to relatively move the electrode and the substrate. When moving in this way, the position may be controlled using a CCD camera or the like using an alignment marker or the like as a mark.

Since the plasma treatment is performed in the air as described above, the plasma treatment can be easily performed without evacuation. As a result, the manufacturing time of the thin film transistor can be significantly shortened. Of course, the plasma treatment can be performed in a vacuum.

(Embodiment 7)
In this embodiment, an ink jet apparatus (droplet discharge apparatus) having a light irradiation unit will be described.

The droplet discharge apparatus shown in FIG. 16 is provided with a droplet discharge unit 701, a light irradiation unit, a stage (conveying stand) 708 on which an object 702 is disposed, and a CCD camera 712 in a processing chamber 706. A central processing unit 715 for controlling the laser oscillator 707, the CCD camera 712, the droplet discharge means 701, and the stage 708 is provided. As a light irradiation means, a laser oscillator 707 and a fiber 709 are provided, and a terminal 710 is provided at the tip of the fiber. The terminal has an optical system, for example, a lens 711 for condensing laser light. In addition to the laser oscillator, an ultraviolet lamp, a halogen lamp, or a black light can be used. The light emitted from the laser oscillator passes through the fiber, is condensed by the lens provided at the terminal so as to have a desired size, and is irradiated to the object to be processed. In order to adjust the shape of the laser light emitted from the laser oscillator and the path of the laser light between the oscillator and the object to be processed, it is composed of a reflector such as a shutter, mirror or half mirror, a cylindrical lens or a convex lens. An optical system may be installed. These optical systems may be disposed in the terminal 710.

By adjusting the optical system in the light irradiating means, light can be incident obliquely from above the object to be processed. In addition, when the object to be processed is a material that transmits light, the light can be irradiated from the lower surface of the object to be processed.

Although not shown, the droplet discharge device includes a nozzle drive power source and a nozzle heater for discharging droplets, and includes a moving means for moving the droplet discharge means. When a flexible light irradiation means such as a fiber is used, the light irradiation means can be moved together while being fixed to the droplet discharge means.

In such a droplet discharge apparatus, a substrate which is an object to be processed 702 is set on a stage 708 provided with a moving unit in the XY axis direction. Note that the substrate, the droplet discharge means, and the light irradiation means move relative to each other so that the entire surface of the substrate is processed. In the present embodiment, the substrate can be moved to any location in the XY plane by the stage. At this time, position control is performed by a CCD camera.

Thus, the lyophilic treatment is performed on the substrate by the light irradiation means. Thereafter, a droplet discharge process for dropping dots onto the lyophilic region is performed by the droplet discharge means.

The lyophilic process or the droplet discharge process is achieved by the relative movement of the droplet discharge unit 701 and the substrate 702 and the predetermined timing of light irradiation or droplet discharge, and a desired pattern can be drawn on the substrate. it can. Therefore, the lyophilic process and the droplet discharge process can be started when the substrate reaches a predetermined position where the droplet discharge unit 701 waits by the stage.

In particular, since the droplet discharge process requires a high degree of accuracy, it is preferable to stop the movement of the substrate on the transport table and scan only the droplet discharge unit 701 with high controllability during droplet discharge. Further, in order to prevent the formation of a cluster of dots at the start point and end point of the wiring, it is also possible to move the light irradiation means, the droplet discharge means, and the substrate at the same time.

In such a droplet discharge device, the processing chamber can perform atmosphere control. For example, a vacuum apparatus such as a cryostat pump can be provided at the exhaust port of the processing chamber for evacuation. Alternatively, a predetermined gas such as nitrogen, argon, oxygen, or the like may be introduced and controlled to an oxidizing atmosphere or a reducing atmosphere. When the atmosphere control is performed as described above, a laser oscillator or the like can be disposed outside the processing chamber, and light irradiation can be performed through a window or the like.

In such a droplet discharge device, means for heating the object to be processed may be provided. Although not shown, a means for measuring various physical property values such as temperature and pressure may be installed as necessary.

These means can be collectively controlled by the central processing unit. Furthermore, if the central processing unit is connected to a production management system or the like with a LAN cable, wireless LAN, optical fiber, or the like, the process can be uniformly managed from the outside, leading to an improvement in productivity.

By using such an apparatus, lyophilic processing and droplet discharge processing can be performed.

FIG. 17 shows an apparatus in which an optical pickup element is used as the light irradiation means.
By using a light source integrated light irradiating means such as an optical pickup element, it is easy to relatively move the non-irradiated object, the light irradiating means and the droplet discharging means. As a result, light irradiation position control and droplet discharge control can be enhanced.

In such a droplet discharge apparatus, the processing chamber 706 can perform atmosphere control. For example, a decompression device 711 such as a cryostat pump can be provided at the exhaust port 705 of the processing chamber for evacuation. In this case, the substrate, which is the object to be processed, is transferred from the transfer port 703 to the processing chamber and fixed to the stage. In addition, a predetermined gas such as nitrogen, argon, oxygen or the like may be introduced from a gas inlet provided in the treatment room so that an oxidizing atmosphere or a reducing atmosphere may be controlled.

In such a droplet discharge device, means for heating the object to be processed may be provided. Since other configurations are the same as those in FIG. 16, detailed description thereof is omitted.

In this embodiment, droplet discharge is performed by a so-called piezo method using a piezoelectric element. However, depending on the material of the solution, a so-called thermal ink jet method in which a heating element generates heat to generate bubbles to push out the solution may be used. . In this case, the piezoelectric element is replaced with a heating element. For droplet discharge, wettability between the solution and the liquid chamber flow path, the preliminary liquid chamber, the fluid resistance portion, the pressurizing chamber, and the solution discharge port (nozzle and head) is important. Therefore, a carbon film, a resin film, and the like for adjusting wettability with the material are formed in each flow path.

With the above apparatus configuration, lyophilic processing can be performed by light irradiation, and dots can be continuously discharged into the lyophilic region in the same processing chamber, and fine patterns can be formed efficiently and accurately on the substrate. Can do.

The droplet discharge method includes a so-called sequential method in which a solution is continuously discharged to form a continuous linear pattern, and a so-called on-demand method in which a solution is discharged in the form of dots. Absent.

(Embodiment 8)
In this embodiment mode, a case where a film containing Teflon (registered trademark) (Teflon (registered trademark)) is formed instead of plasma treatment will be described. Therefore, Embodiment 1 may be referred to for other manufacturing methods.

As shown in FIG. 14A, a base film 101 is formed over a substrate 100 having an insulating surface. Thereafter, a Teflon (registered trademark) film 128 is formed. The Teflon (registered trademark) film may be formed with a monomolecular layer thickness, that is, a film thickness of 5 nm or less. A Teflon (registered trademark) film can be formed by sputtering, CVD, or the like. Thereafter, the Teflon (registered trademark) film is selectively irradiated with laser light to form a lyophilic region.

As shown in FIG. 14B, a conductive film functioning as the gate electrode 103 is formed in the lyophilic region of the Teflon (registered trademark) film. The gate electrode can be formed by dropping a dot in which a conductor is mixed in a solvent using an inkjet method. In this embodiment, a dot in which a silver (Ag) conductor is dispersed in a tetradecane solvent is dropped. As a result of forming a Teflon (registered trademark) film and selectively forming a lyophilic region, a gate electrode formed by an inkjet method can be miniaturized.

Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry. By this heat treatment, the Teflon (registered trademark) film formed to a thickness of a monomolecular layer is removed.

As shown in FIG. 14C, a gate insulating film 104, a semiconductor film 105, and an N-type semiconductor film 106 are sequentially formed and patterned into a desired shape. After that, a conductive film functioning as the source and drain electrodes 108 is formed. A Teflon (registered trademark) film may be formed before forming the source electrode and the drain electrode. In addition, a lyophilic region may be selectively formed with respect to the Teflon (registered trademark) film. As a result, the source electrode and the drain electrode formed by the ink jet method can be miniaturized.

In this embodiment mode, the channel-etched thin film transistor described in Embodiment Mode 1 is described; however, the structure of the thin film transistor is not limited. That is, in the method for manufacturing a thin film transistor described in any of the above embodiments, a Teflon (registered trademark) film may be formed to have liquid repellency, and a lyophilic region may be selectively formed.

As described above, the thin film transistor provided with the source electrode and the drain electrode is completed. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

The thin film transistor thus formed is characterized in that a Teflon (registered trademark) film is formed and a lyophilic region is selectively formed before the conductive film is formed by an inkjet method. In this embodiment mode, a Teflon (registered trademark) film is formed and a lyophilic region is selectively formed before forming a gate electrode by an inkjet method. However, in at least one inkjet process, Teflon (registered trademark) is used. ) A film may be formed to selectively form a lyophilic region. Therefore, a Teflon (registered trademark) film may be formed before the ink jet process other than that shown in this embodiment mode to selectively form a lyophilic region. In addition to the step of forming a Teflon (registered trademark) film and selectively forming a lyophilic region before using the inkjet method, the above-described plasma treatment is performed, or in addition, a lyophilic region is formed. May be.

As described above, a thin film transistor having a miniaturized gate electrode, a source electrode, and a drain electrode can be obtained by forming a Teflon (registered trademark) film before the inkjet process and selectively forming a lyophilic region. .

In addition, when a wiring, a mask, or the like is formed by the ink jet method, the material utilization efficiency is improved, and the cost can be reduced and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

(Embodiment 9)
In this embodiment, a case where a film having a silane coupling agent is formed instead of a Teflon (registered trademark) film will be described.

First, a silane coupling agent is applied by an application method such as a spin coating method. Thereafter, the silane coupling agent is dried. In this embodiment, it is naturally dried. And it wash | cleans in order to remove an unnecessary silane coupling agent. In this embodiment mode, washing is performed with water. As a result, the silane coupling agent can be formed to have a monomolecular layer thickness. Thereafter, the silane coupling agent is fired. In this embodiment, heating is performed at 100 ° C. for 10 minutes. In this way, a silane coupling agent can be formed and the surface to be formed can be made liquid repellent. The silane coupling agent can be removed. In particular, the silane coupling agent can be removed by a heating process.

In addition to the above, a film having a silane coupling agent can be formed by a vapor phase method or an immersion method. In the case of the vapor phase method, the substrate is placed on a tray made of aluminum or the like, and the FAS material is dropped around the substrate. Then, it heats. For example, it heats at 100-150 degreeC for 10 minutes using a hotplate. At this time, it is preferable to cover the hot plate. Next, the substrate is taken out, washed with acetone, washed with water, and dried.
In the case of the immersion method, the substrate is immersed in a container containing the FAS material for 5 to 10 minutes. At this time, you may heat at about 60 degreeC. Next, acetone washing and water washing are performed. Thereafter, the substrate is dried. By drying, the single molecules tend to be oriented.
When a film having a silane coupling agent is formed by such a method, a film that is more uniform than the spin coating method can be formed.

Thereafter, a lyophilic region is selectively formed. And a dot is dripped at a lyophilic area | region. As a result, the wiring formed by the inkjet method can be miniaturized.

Since other manufacturing methods are the same as those in the above embodiment, detailed description thereof is omitted.

As described above, a thin film transistor having a miniaturized gate electrode, a source electrode, and a drain electrode can be obtained by forming a silane coupling agent before the inkjet process and selectively forming a lyophilic region.

(Embodiment 10)
In this embodiment, an interlayer insulating film provided so as to cover the thin film transistor and a wiring formed in an opening provided in the interlayer insulating film are described.

As shown in FIG. 6A, a thin film transistor (TFT) 120 including a protective film 113 is formed over a substrate 100 having an insulating surface based on the above embodiment mode. Although this embodiment mode is described using the TFT described in Embodiment Mode 1, any TFT described in the above embodiment mode may be used.

Then, an interlayer insulating film 121 is formed so as to cover the TFT 120. As a result, flatness can be improved. For the interlayer insulating film, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane , And their stacked structures can be used. Siloxane has a skeletal structure composed of a bond of silicon (Si) and oxygen (O), and the substituent contains at least hydrogen, or the substituent has at least one of fluorine, an alkyl group, and an aromatic hydrocarbon. A polymeric material having a starting material. Polysilazane is formed using a liquid material containing a polymer material having a bond of silicon (Si) and nitrogen (N) as a starting material. As the organic material, either a positive photosensitive organic resin or a negative photosensitive organic resin may be used.

In order to further improve the flatness, polishing such as CMP may be performed on the interlayer insulating film.

As shown in FIG. 6B, an opening 122 having a desired shape is formed at a desired position in the interlayer insulating film 121. In this embodiment, the case where an opening having a tapered side surface is formed in an interlayer insulating film over a source electrode or a drain electrode will be described.

First, a mask is formed over the interlayer insulating film 121, and an opening is formed by etching using the mask. The mask can be formed by an inkjet method or a photolithography method. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time. At this time, plasma treatment may be performed on the interlayer insulating film 121 to form a lyophobic region, and the lyophilic treatment may be selectively performed on the lyophobic region. As a result, the mask formed by the inkjet method can be miniaturized.

Alternatively, as shown in FIG. 20A, an opening may be formed in the interlayer insulating film by dropping dots containing an etchant by an inkjet method. This is because when the opening is formed by the ink jet method, the use efficiency of the etchant is improved, and the cost and the amount of waste liquid can be reduced. When the opening is formed by an inkjet method, the photolithography process can be simplified.

In addition, as illustrated in FIG. 21A, the wiring 123 may be formed by dropping an interlayer insulating film material and a wiring material by an inkjet method. In this case, as shown in FIG. 21B, in order to improve flatness, the surface of the interlayer insulating film or the wiring may be polished by CMP or the like.

Then, plasma treatment is performed on the interlayer insulating film 121 in which the opening is formed. As a result of this plasma treatment, the surface modification of the interlayer insulating film and the opening (including the side surface of the opening) is performed so that the liquid repellency has low wettability with respect to liquids such as water, alcohol, and oil. . That is, a liquid repellent region is formed by plasma treatment. Thereafter, the liquid repellent region is selectively irradiated with laser light to form the lyophilic region.

As shown in FIG. 6C, a wiring 123 is formed in the opening. The wiring 123 can be formed by a sputtering method or an inkjet method. In this embodiment, a dot in which a silver (Ag) conductor is dispersed in a tetradecane solvent is dropped to form a wiring. At this time, the inside of the opening of the interlayer insulating film (including the side surface of the opening) is lyophilic. The surface of the interlayer insulating film other than the opening is liquid repellent. As a result, the dots having the wiring material are likely to enter the opening. Furthermore, the wiring formed by the inkjet method can be miniaturized. Controlling the liquid repellency and lyophilicity in this way is suitable when forming the wiring by the ink jet method.

Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry.

The thin film transistor thus formed is characterized by performing a liquid repellent treatment and a selective lyophilic treatment before forming a wiring on the interlayer insulating film by an ink jet method. In this embodiment, the liquid repellent treatment and the selective lyophilic treatment are performed after or before the opening is formed, but the liquid repellent treatment and the selective lyophilic treatment may be performed before and after the opening is formed. .

Further, by performing lyophobic treatment and selective lyophilic treatment on the interlayer insulating film, the wiring formed in the opening and other wirings (for example, signal lines) are miniaturized when formed by an inkjet method. be able to.

As described above, a thin film transistor having a wiring formed over a miniaturized interlayer insulating film can be obtained by a liquid repellent process and a selective lyophilic process before an ink jet process.

(Embodiment 11)
In this embodiment mode, a method for forming a pixel electrode will be described.

As shown in FIG. 7A, a thin film transistor (TFT) 120 including a protective film 113 is formed over a substrate 100 having an insulating surface based on the above embodiment mode. Although this embodiment mode is described using the TFT described in Embodiment Mode 1, any TFT described in the above embodiment mode may be used. A case where the pixel electrode 125 is formed below the electrodes so as to be connected to the source electrode and the drain electrode will be described.

First, after forming the gate insulating film, the semiconductor film and the N-type semiconductor film are patterned to form a pixel electrode in a region where a source electrode or a drain electrode is to be formed. The pixel electrode can be formed by a sputtering method or an inkjet method. The pixel electrode is formed from a light-transmitting or non-light-transmitting material. For example, ITO or the like can be used when it has translucency, and a metal film can be used when it has non-translucency. As specific pixel electrode materials, indium tin oxide, IZO (indium zinc oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide, and 2 to 20% silicon oxide (SiO ₂ ) in indium oxide. ) -Mixed ITO-SiOx, organic indium, organic tin, titanium nitride (TiN), or the like can also be used.

In particular, when the pixel electrode is formed by an inkjet method, the liquid-repellent region may be formed by performing plasma treatment on the gate insulating film which is a surface where the pixel electrode is formed. In addition, the lyophilic region may be formed by selectively irradiating the liquid repellent region with laser light.

In FIG. 7A, a dot in which an ITO conductor is dispersed is dropped using an inkjet method as a pixel electrode. By performing the liquid repellent treatment and the selective lyophilic treatment, the pixel electrode formed by the ink jet method can be miniaturized. Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry.

FIG. 7B illustrates a case where a pixel electrode is formed over a source electrode or a drain electrode, unlike FIG. 7A. The pixel electrode can be formed by a sputtering method or an inkjet method in the same manner as described above. In particular, in the case where a pixel electrode is formed by an inkjet method, a liquid repellent region may be formed by performing plasma treatment on a source electrode, a drain electrode, and a gate insulating film, which are formation surfaces of the pixel electrode. In addition, the lyophilic region may be formed by selectively irradiating the liquid repellent region with laser light.

In FIG. 7B, a dot in which an ITO conductor is dispersed is dropped using an inkjet method as a pixel electrode. By performing the liquid repellent treatment and the selective lyophilic treatment, the pixel electrode formed by the ink jet method can be miniaturized. Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry.

In FIG. 7C, unlike FIGS. 7A and 7B, the wiring 123 is formed after the interlayer insulating film 121 is formed and planarized, and the wiring 123 and the pixel electrode are connected. The pixel electrode can be formed by a sputtering method or an inkjet method in the same manner as described above. In particular, when a pixel electrode is formed by an inkjet method, a liquid-repellent region that may be subjected to plasma treatment on an interlayer insulating film, which is a formation surface of the pixel electrode, may be formed after the wiring 123 is formed. . In addition, the lyophilic region may be formed by selectively irradiating the liquid repellent region with laser light.

In FIG. 7C, ITSO is used as the pixel electrode. ITSO can be formed by dropping an ITO conductive material and silicon dispersed dots using an inkjet method. Alternatively, it can be formed by a sputtering method using an ITO target containing silicon. At this time, siloxane is preferably used for the interlayer insulating film 121. Further, an insulating film 126 containing nitrogen, for example, silicon nitride or silicon oxynitride may be formed over the siloxane interlayer insulating film. When a light-emitting element having such a structure is formed, light emission luminance and lifetime can be improved. In the case where acrylic or polyimide is used for the interlayer insulating film 121, the insulating film 126 containing nitrogen can be omitted. In the case of such a structure, a liquid crystal element is preferably formed.

In the case of forming a pixel electrode by an inkjet method, the pixel electrode formed by the inkjet method can be miniaturized by performing a liquid repellent process and a selective lyophilic process. Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry.

As described above, when a pixel electrode is formed by an inkjet method, it is preferable that liquid repellent treatment and selective lyophilic treatment are performed on a surface on which the pixel electrode is formed.

As described above, a thin film transistor having a miniaturized pixel electrode can be obtained by a liquid repellent process and a selective lyophilic process before an ink jet process.

The TFT substrate provided with up to the pixel electrode is referred to as a module TFT substrate.

(Embodiment 12)
In this embodiment, a display device (liquid crystal display device) including a liquid crystal module including the thin film transistor described in the above embodiment is described.

FIG. 8 shows a cross section of a liquid crystal display device having the thin film transistor 120 and the pixel electrode 125 formed on the TFT substrate as described in the above embodiment. When a light-transmitting conductive film (for example, ITO or ITSO) is used for the pixel electrode 125, a transmissive liquid crystal display device is obtained. When a non-light-transmitting, that is, highly reflective conductive film (for example, aluminum) is used, a reflective liquid crystal display device is used. A display device can be formed. The module TFT substrate used in the liquid crystal display device as in this embodiment is referred to as a liquid crystal module TFT substrate.

An alignment film 131 is formed so as to cover the thin film transistor 120, the protective film 113, and the pixel electrode 125.

A color filter 134, a counter electrode 133, and an alignment film 131 are sequentially formed on the counter substrate 135. The color filter, the counter electrode, or the alignment film can be formed by an inkjet method. Although not shown, a black matrix may be formed, and the black matrix can also be formed by an inkjet method.

After that, the substrate 100 and the counter substrate 135 are bonded to each other using a sealant, and liquid crystal is injected therebetween to form a liquid crystal layer 136, thereby forming a liquid crystal module. When liquid crystal is injected, a processing chamber in a vacuum state is required.

Note that the liquid crystal may be formed by dropping, or an inkjet method may be used as a means for dropping the liquid crystal. Particularly in the case of a large substrate, it is preferable to form liquid crystals by dropping. This is because when the liquid crystal injection method is used, the processing chamber is enlarged as the substrate becomes large, and the weight of the substrate increases, resulting in difficulty.

When the liquid crystal is dropped, a sealing agent is first formed around one substrate. The reason why one substrate is described is that a sealant may be formed on either the substrate 100 or the counter substrate 135. At this time, the sealant is formed in a closed region where the start point and end point of the sealant coincide. Thereafter, one or more liquid crystals are dropped. In the case of a large substrate, a plurality of liquid crystals are dropped at a plurality of locations. Then, it is brought into a vacuum state and bonded to the other substrate. This is because in a vacuum state, unnecessary air can be removed, and damage and expansion of the sealant due to air can be prevented.

Next, two or more points in the region where the sealant is formed are solidified and bonded for temporary fixing. In the case where an ultraviolet curable resin is used as the sealant, it is only necessary to irradiate ultraviolet rays at two or more points in the region where the sealant is formed. Thereafter, the substrate is taken out from the processing chamber, and the entire sealing agent is solidified and bonded in order to perform the final fastening. At this time, a light shielding material is preferably arranged so that the thin film transistor and the liquid crystal are not irradiated with ultraviolet rays.

In order to maintain the gap between the substrates, a columnar or spherical spacer may be used in addition to the sealant.

In this way, the liquid crystal module is completed.

After that, an FPC (Flexible Printed Circuit) may be bonded using an anisotropic conductive film to connect the external terminal and the signal line driving circuit or the scanning line driving circuit. Further, the signal line driver circuit or the scan line driver circuit may be formed as an external circuit.

In this manner, a liquid crystal display device including a thin film transistor having a fine wiring and connected to an external terminal can be formed.

In this embodiment mode, since the thin film transistor does not form an interlayer insulating film, a very thin liquid crystal display device can be formed.

In this embodiment mode, as shown in the above embodiment mode, an interlayer insulating film may be formed to improve flatness. Increasing the flatness is preferable because an alignment film can be formed uniformly and a voltage can be uniformly applied to the liquid crystal layer.

For the interlayer insulating film, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane , And their stacked structures can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

(Embodiment 13)
In this embodiment, a display device (light-emitting device) including a light-emitting module including the thin film transistor described in the above embodiment is described.

FIG. 10 shows a cross section of a light emitting device having the thin film transistor 120 formed on the TFT substrate and the pixel electrode 125 as shown in the above embodiment.

As shown in the above embodiment mode, the thin film transistor 120 including the pixel electrode 125 is formed. Note that the pixel electrode 125 functions as a first electrode of the light-emitting element.

After that, an insulating film 143 that functions as a bank or a partition is formed over the first electrode. For the insulating film, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane, And a stacked structure thereof can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used. For example, in the case where positive photosensitive acrylic is used as the organic material, an opening having a curvature can be formed at the upper end when the photosensitive organic resin is etched by an exposure process. Therefore, disconnection of an electroluminescent layer or the like to be formed later can be prevented. The TFT substrate in this state is referred to as a light emitting module TFT substrate.

An electroluminescent layer 141 is formed in the opening of the insulating film 143 provided over the first electrode. Before forming the electroluminescent layer, plasma treatment may be performed and a liquid repellent treatment may be performed. In addition, the lyophilic treatment may be performed by selectively irradiating the opening of the insulating film with laser light in the liquid repellent region. In this embodiment mode, plasma treatment is performed on the opening portion of the insulating film 143, and an electroluminescent layer including a polymer material is formed by an inkjet method.

After that, the second electrode 142 of the light emitting element is formed so as to cover the electroluminescent layer 141 and the insulating film 143.

Note that the type of molecular excitons formed by the electroluminescent layer can be a singlet excited state or a triplet excited state. The ground state is usually a singlet state, and light emission from the singlet excited state is called fluorescence. In addition, light emission from the triplet excited state is called phosphorescence. The light emission from the electroluminescent layer includes the case where either excited state contributes. Furthermore, fluorescence and phosphorescence may be used in combination, and either fluorescence or phosphorescence can be selected depending on the emission characteristics of each RGB (emission luminance, lifetime, etc.).

The electroluminescent layer 141 is in order of HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), and EIL (electron injection layer) in this order from the first electrode 125 side. Are stacked. Note that the electroluminescent layer can have a single-layer structure or a mixed structure in addition to the stacked structure.

In addition, as the electroluminescent layer 141, materials that emit red (R), green (G), and blue (B) light are selectively formed by an evaporation method using an evaporation mask or the like. A material that emits red (R), green (G), and blue (B) light can also be formed by an ink-jet method. In this case, RGB can be separately applied without using a mask, which is preferable.

Specifically, CuPc or PEDOT is used as HIL, α-NPD is used as HTL, BCP or Alq _{3 is used} as ETL, and BCP: Li or CaF ₂ is used as EIL. Further, for example, EML may be Alq ₃ doped with a dopant corresponding to each emission color of R, G, and B (DCM in the case of R, DMQD in the case of G).

Note that the electroluminescent layer is not limited to the above materials. For example, instead of CuPc or PEDOT, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) and α-NPD or rubrene can be co-evaporated to improve the hole injection property. The material of the electroluminescent layer can be used as an organic material (including a low molecule or a polymer), or a composite material of an organic material and an inorganic material.

Furthermore, when each RGB electroluminescent layer is formed, high-definition display can be performed using a color filter. This is because the color filter can correct a broad peak to be sharp in the emission spectrum of each RGB.

As described above, the case where a material that emits light of each RGB is formed has been described. However, full color display can be performed by forming a material that emits light of a single color and combining a color filter and a color conversion layer. For example, when an electroluminescent layer that emits white or orange light is formed, full color display can be performed by separately providing a color filter and a combination of a color filter and a color conversion layer. The color filter and the color conversion layer may be formed on, for example, a second substrate (sealing substrate) and attached to the substrate. Any of a material exhibiting monochromatic light emission, a color filter, and a color conversion layer can be formed by an inkjet method.

Of course, monochromatic light emission may be displayed. For example, an area color type display device may be formed using monochromatic light emission. As the area color type, a passive matrix type display unit is suitable, and characters and symbols can be mainly displayed.

In addition, it is necessary to select materials for the first electrode 125 and the second electrode 142 in consideration of a work function. The first electrode and the second electrode can be either an anode or a cathode depending on the pixel configuration. In this embodiment mode, since the polarity of the driving TFT is an N-channel type, it is preferable that the first electrode be a cathode and the second electrode be an anode. In the case where the polarity of the driving TFT is a p-channel type, the first electrode may be an anode and the second electrode may be a cathode.

Below, the electrode material used for an anode and a cathode is demonstrated.

As an electrode material used as the anode, it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a high work function (work function 4.0 eV). Specific examples include ITO, IZO in which 2 to 20% zinc oxide (ZnO) is mixed in indium oxide, ITSO in which ₂ to 20% silicon oxide (SiO ₂ ) is mixed in indium oxide, gold, platinum, Nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or a nitride of a metal material (eg, titanium nitride) can be used.

On the other hand, as an electrode material used as a cathode, it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a low work function (work function of 3.8 eV or less). Specific examples of the material include elements belonging to Group 1 or Group 2 of the element periodic rule, that is, alkali metals such as lithium and cesium, alkaline earth metals such as magnesium, calcium, and strontium, and alloys containing these (Mg: In addition to Ag, Al: Li) and compounds (LiF, CsF, CaF ₂ ), transition metals including rare earth metals can be used.

Further, in the present embodiment, when the second electrode needs to be light-transmitting, these metals or an alloy containing these metals are formed very thin, and ITO, IZO, ITSO, or other metals (alloys are used). Including).

The first electrode and the second electrode can be formed by an evaporation method, a sputtering method, an inkjet method, or the like.

In particular, when a conductive film by sputtering, ITO or ITSO, or a laminate thereof is formed as the second electrode, the electroluminescent layer may be damaged during sputtering. In order to reduce damage due to sputtering, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) is preferably formed on the uppermost surface of the electroluminescent layer. Therefore, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) functioning as HIL or the like is formed on the uppermost surface of the electroluminescent layer, and sequentially from the first electrode side, EIL (electron injection layer), ETL ( The electron transport layer), the EML (light emitting layer), the HTL (hole transport layer), the HIL (hole injection layer), and the second electrode may be stacked in this order. At this time, the first electrode functions as a cathode, and the second electrode functions as an anode.

In particular, in this embodiment, since the polarity of the driving TFT is an N-channel type, considering the electron moving direction, the first electrode is a cathode, EIL (electron injection layer), ETL (electron transport layer), EML. The (light emitting layer), HTL (hole transport layer), HIL (hole injection layer), and the second electrode are preferably anodes.

After that, a passivation film containing nitrogen, DLC, or the like may be formed by a sputtering method or a CVD method. As a result, moisture and oxygen can be prevented from entering. In addition, the first electrode, the second electrode, and other electrodes can cover the side surface of the display means to prevent oxygen and moisture from entering. Next, the sealing substrate is attached. In the space formed by the sealing substrate, nitrogen may be sealed or a desiccant may be disposed. Further, a resin having translucency and high water absorption may be filled. The sealing structure will be described in detail in the following embodiment.

In this way, the light emitting module is completed.

In the light-emitting module, when the first electrode and the second electrode are formed so as to have a light-transmitting property, light from the electroluminescent layer has a luminance corresponding to the video signal input from the signal line in the double arrow directions 130 and 131. Exit. In addition, when the first electrode is formed so as to transmit light and the second electrode is formed so as not to transmit light, the light is emitted only in the arrow direction 131. In addition, when the first electrode is formed so as not to transmit light and the second electrode is formed so as to transmit light, the light is emitted only in the arrow direction 130. At this time, light can be effectively used by using a highly reflective conductive film for the non-light-transmitting electrode provided on the side not corresponding to the light emission direction.

In this embodiment, in order to obtain a light-transmitting conductive film, a light-transmitting conductive film is thinly formed to have a light-transmitting property, and the light-transmitting conductive film is formed thereover. May be laminated.

After that, an FPC (Flexible Printed Circuit) may be bonded using an anisotropic conductive film to connect the external terminal and the signal line driving circuit or the scanning line driving circuit. Further, the signal line driver circuit or the scan line driver circuit may be formed as an external circuit.

As described above, a light-emitting device including a thin film transistor having a fine wiring and connected to an external terminal can be formed.

In this embodiment mode, since the thin film transistor does not form an interlayer insulating film, a very thin light-emitting device can be formed.

In this embodiment mode, as shown in the above embodiment mode, an interlayer insulating film may be formed to improve flatness. Increasing the flatness is preferable because a voltage can be uniformly applied to the electroluminescent layer.

For the interlayer insulating film, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane , And their stacked structures can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

FIG. 9A illustrates an equivalent circuit diagram of a pixel portion of a light-emitting device. One pixel includes a switching TFT (switching TFT) 800, a driving TFT (driving TFT) 801, and a current control TFT (current control TFT) 802. These TFTs have an N-channel type. . One electrode and a gate electrode of the switching TFT 800 are connected to a signal line 803 and a scanning line 805, respectively. One electrode of the current control TFT 802 is connected to the first power supply line 804, and the gate electrode is connected to the other electrode of the switching TFT.

The capacitor 808 may be provided so as to hold the voltage between the gate and the source of the current control TFT. In this embodiment mode, for example, when the potential of the first power supply line is set to a low potential and the light emitting element is set to a high potential, the current control TFT has an N-channel type, so that the source electrode and the first power supply line are connected. To do. Therefore, the capacitor can be provided between the gate electrode of the current control TFT and the source electrode, that is, the first power supply line. Note that when the gate capacitance of the switching TFT, the driving TFT, or the current control TFT is large and the leakage current from each TFT is within an allowable range, the capacitor 808 is not necessarily provided.

One electrode of the driving TFT 801 is connected to the other electrode of the current control TFT, and the gate electrode is connected to the second power supply line 806. The second power supply line 806 has a fixed potential. Therefore, the gate potential of the driving TFT can be set to a fixed potential, and operation can be performed so that the gate-source voltage Vgs due to parasitic capacitance or wiring capacitance does not change.

A light emitting element 807 is connected to the other electrode of the driving TFT. In this embodiment mode, for example, when the potential of the first power supply line is set to a low potential and the light emitting element is set to a high potential, the cathode of the light emitting element is connected to the drain electrode of the driving TFT. Therefore, it is preferable to stack the cathode, the electroluminescent layer, and the anode in this order. At this time, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) is preferably formed on the uppermost surface of the electroluminescent layer in order to reduce damage due to sputtering during the formation of the second electrode. Therefore, it is more preferable to form an oxide such as molybdenum oxide (MoOx: x = 2 to 3) functioning as HIL or the like on the uppermost surface of the electroluminescent layer. As described above, in the case of a TFT having an amorphous semiconductor film and having an N-channel type, it is preferable to connect the drain electrode and the cathode of the TFT and stack the layers in the order of EIL, ETL, EML, HTL, HIL, and anode. It is.

The operation of such a pixel circuit will be described below.

When the scanning line 805 is selected, charge starts to be accumulated in the capacitor 808 when the switching TFT is turned on. The charge of the capacitor element 808 is accumulated until it becomes equal to the gate-source voltage of the current control TFT. When equal, the current control TFT is turned on, and the driving TFTs connected in series are turned on. At this time, since the gate potential of the driving TFT is a fixed potential, a constant gate-source voltage Vgs irrespective of parasitic capacitance or wiring capacitance is applied to the light emitting element, that is, constant gate-source voltage Vgs. Minute current can be supplied.

As described above, since the light-emitting element is a current-driven element, it is preferable to use analog driving when there is little variation in TFT characteristics in the pixel, particularly Vth variation. As in this embodiment mode, a TFT having an amorphous semiconductor film has low characteristic variation, and thus analog driving can be used. On the other hand, even in digital driving, a constant current can be supplied to the light emitting element by operating the driving TFT in a saturation region (region satisfying | Vgs−Vth | <| Vds |).

FIG. 9B illustrates an example of a top view of a pixel portion having the above equivalent circuit.

First, a gate electrode, a scanning line, and a second power supply line of each TFT are formed from the same conductive film on the base film by an inkjet method or a sputtering method. In the case where a gate electrode or the like is formed by an inkjet method, a liquid repellent region may be formed by performing plasma treatment on a base film that is a formation surface of the gate electrode or the like. In addition, a lyophilic region may be selectively formed with respect to the lyophobic region, and the gate electrode, the scanning line, and the second power supply line may be formed in the lyophilic region. As a result, the gate electrode, the scanning line, and the second power supply line formed by the ink jet method can be miniaturized.

Although not shown, a gate insulating film is formed thereafter.

A first electrode 810 of the light-emitting element 807 is formed over the gate insulating film. The first electrode 810 can be formed by an inkjet method, a sputtering method, or the like. In the case where the first electrode is formed by an inkjet method, a liquid-repellent region may be formed by performing plasma treatment on the gate insulating film which is a surface where the first electrode is formed. In addition, a lyophilic region may be selectively formed with respect to the lyophobic region, and the first electrode may be formed in the lyophilic region. As a result, the first electrode formed by the inkjet method can be miniaturized.

Next, a semiconductor film is formed. In this embodiment mode, a semiconductor film is formed over the entire surface by a plasma CVD method, and is patterned using a mask so that the semiconductor film has a desired shape. An N-type semiconductor film may be formed over the semiconductor film, and the semiconductor film and the N-type semiconductor film can be continuously formed.

Thereafter, the conductive film formed by a sputtering method or a CVD method is patterned to form a source wiring, a drain wiring, a signal line, and a first power supply line. The mask for patterning can be formed by an inkjet method or a photolithography method.

In addition, the source electrode, the drain electrode, the signal line, and the first power supply line can be formed by an inkjet method. In the case where the source electrode, the drain electrode, the signal line, and the first power supply line are formed by an inkjet method, plasma treatment is performed on the formation surfaces of the source electrode, the drain electrode, the signal line, and the first power supply line, thereby repelling. A liquid region may be formed. In addition, a lyophilic region may be selectively formed with respect to the lyophobic region, and the source electrode, the drain electrode, the signal line, and the first power supply line may be formed in the lyophilic region. As a result, the source electrode, the drain electrode, the signal line, and the first power supply line that are formed by an inkjet method can be miniaturized.

In this embodiment mode, the capacitor 808 is formed of a gate wiring and a source / drain wiring provided with a gate insulating film interposed therebetween.

In this embodiment mode, since the driving TFT includes an amorphous semiconductor film, the driving TFT may be designed to have a wide channel width (W).

In this manner, a pixel portion of the light emitting device can be formed.

Note that a cross-sectional view taken along C-C ′ in FIG. 9B corresponds to the cross-sectional view illustrated in FIG. 10.

  Such an active matrix light-emitting device is considered to be advantageous because it can be driven at a low voltage because a TFT is provided in each pixel when the pixel density is increased.

In this embodiment mode, an active matrix light-emitting device in which each pixel is provided with each TFT has been described; however, a passive matrix light-emitting device in which a TFT is provided for each column can also be formed. A passive matrix light-emitting device has a high aperture ratio because a TFT is not provided for each pixel. In the case of a light-emitting device in which light emission is emitted to both sides of an electroluminescent layer, transmittance using a passive matrix display device is increased.

(Embodiment 14)
In this embodiment mode, a mode of a display device such as a light-emitting device or a liquid crystal display device to which an external terminal is connected will be described.

FIG. 11 shows an external view of a display device on which the control circuit 601a and the power supply circuit 602 are mounted. A pixel portion 603 in which a light-emitting element or a liquid crystal element is provided for each pixel is provided over the substrate 600. A thin film transistor included in the pixel portion 603 can be formed to have a miniaturized wiring or the like as in the above embodiment mode. A scanning line driver circuit 604a that selects a pixel included in the pixel portion 603 and a signal line driver circuit 605a that supplies a video signal to the selected pixel are mounted on an IC chip. The long side and short side length and the number of ICs to be mounted are not limited to the present embodiment. Further, the scan line driver circuit and the signal line driver circuit may be formed integrally with the pixel portion.

The printed circuit board 607 is provided with a control circuit 601a, a power supply circuit 602, a video signal processing circuit 609a, a video RAM 610a, and an audio circuit 611a. The power supply voltage output from the power supply circuit 602, and various signals from the control circuit 601a, the video signal processing circuit 609a, the video RAM 610a, and the audio circuit 611a are sent through the FPC 606 to the scanning line driving circuit 604a and the signal line driving circuit 605a. And further supplied to the pixel portion 603.

The power supply voltage and various signals of the printed circuit board 607 are supplied through an interface (I / F) unit 608 in which a plurality of input terminals are arranged. The video signal processing circuit 609 a receives a signal from an interface (I / F) unit 608. Further, the video signal processing circuit 609a exchanges signals with the video RAM 610a.

In this embodiment mode, the printed circuit board 607 is mounted using the FPC 606, but the present invention is not necessarily limited to this structure. The control circuit 601a and the power supply circuit 602 may be directly mounted on the substrate using a COG (Chip on Glass) method. The mounting method of the IC chip such as the signal line driver circuit and the scanning line driver circuit is not limited to this embodiment mode, and the IC chip formed on the substrate is connected to the wiring of the pixel portion by a wire bonding method. Also good.

Further, in the printed circuit board 607, noise may occur in a power supply voltage or a signal or a signal may be slow to rise due to a capacitance formed between wirings that are routed or resistance of the wiring itself. Therefore, various elements such as a capacitor and a buffer may be provided on the printed circuit board 607 so as to prevent noise on the power supply voltage and the signal and the rise of the signal from becoming dull.

As described above, a display device including a thin film transistor having a miniaturized wiring or the like can be formed.

FIG. 19 shows a form of a display device different from FIG. In FIG. 19, a module is formed using a thin film transistor having a crystalline semiconductor film as described in Embodiment Mode 5. Therefore, elements formed in the drive circuit portion and the peripheral circuit portion can be integrally formed on the substrate.

As shown in FIG. 19A, a pixel portion 603, a scan line driver circuit 604b, a signal line driver circuit 605b, a control circuit 601b, an audio circuit 611b, a video signal processing circuit 609b, and a video RAM 610b are provided over a substrate 600. It has been. As a result, the number of elements formed on the printed board can be reduced.

FIG. 19B shows a block diagram of each circuit formed over the substrate 600. Note that a circuit in the case where a liquid crystal element is formed in the pixel portion 603 is described. A pixel portion 603 is provided on the panel and has a gradation power source 617 for performing gradation display. A scanning line driver circuit 604a and a signal line driver circuit 605a are provided around the pixel portion 603.

The control circuit 601b includes a CPU 616, a CPU interface (I / F) 623, a WRAM 624 functioning as a stack / variable SRAM used by the CPU, a PROM 615 functioning as a mask ROM storing programs and image data, a PROM and a WRAM. And a memory controller 625 having a function of generating a signal for controlling a circuit for audio by decoding a part of the address for WRAM and the address for WRAM.

The audio circuit 611b includes an audio ROM 619 that functions as a mask ROM in which audio data is stored, an audio controller 621 that has a function of generating a clock signal of the audio circuit, and generating an address of the audio ROM using a counter, An amplifier 618 having a function of creating an analog waveform from digital audio data and amplifying the analog waveform is included.

The video signal processing circuit 609b includes a CRAM 622 that functions as an SRAM that stores color information of image data.

Further, an SRAM 626 for storing image coordinate information and image information for one line of the image is provided.

Each circuit having these functions is supplied with power from the power supply circuit 602 provided on the printed circuit board 607 via the FPC 606.

In the case where a thin film transistor is manufactured using a crystalline semiconductor film in this manner, the thin film transistor can be integrally formed with a glass substrate, and the display device can be reduced in size and weight.
In addition, since the number of connection points with the FPC can be reduced, the productivity of the display device can be increased.

As described above, a display device including a thin film transistor having a miniaturized wiring or the like can be formed.

(Embodiment 15)
In this embodiment, a state where the light-emitting device described in the above embodiment is sealed is described.

FIG. 12A is a cross-sectional view of the sealed light-emitting device, and shows a cross-sectional view corresponding to D-D ′ in FIG. 11. In the pixel portion 903, a driving TFT 914 having an N-channel type is provided over a substrate (referred to as a first substrate for convenience) 911 with a base film 912 interposed therebetween. The driving TFT can be formed to have a miniaturized wiring or the like as in the above embodiment mode. An anode 915 is connected to a wiring functioning as a source electrode or a drain electrode of the driving TFT. An electroluminescent layer 916 and a cathode 917 are formed in this order on the anode.

Further, a protective film 918 is provided to cover the cathode. The protective film is formed to have an insulating film mainly composed of silicon nitride or silicon nitride oxide obtained by sputtering (DC method or RF method), a DLC film containing hydrogen (Diamond Like Carbon), or a carbon nitride film. Has been. The protective film can have a single-layer structure or a stacked structure of the above films. For example, in the case of forming a high hardness film for preventing moisture and oxygen from entering as a protective film, a high hardness film can be provided after a film for relaxing stress, for example, a carbon nitride film is provided. The protective film can prevent deterioration of the electroluminescent layer due to moisture, oxygen, or the like.

The cathode and the protective film are provided up to the first connection region 920. In the connection region 920, the cathode is connected to the connection wiring 919.

In the sealing region 923, a first substrate 911 and a counter substrate (referred to as a second substrate for convenience) 922 are attached to each other with a sealant 921 interposed therebetween. A desiccant 925 may be provided on the counter substrate. The desiccant can prevent moisture and oxygen from entering. Furthermore, a color filter may be formed on the counter substrate. This is because the color filter can correct a broad peak to be sharp in the emission spectrum of each RGB. The sealing agent is made of a thermosetting resin or an ultraviolet curable resin, and is heated while applying pressure or irradiated with ultraviolet rays to bond and fix the first substrate and the second substrate. For example, an epoxy resin can be used as the sealant. Spacers are mixed in the sealing agent, and a gap between the first substrate and the second substrate, that is, a so-called gap is maintained. A spacer having a spherical or columnar shape is used as the spacer, and in this embodiment, a cylindrical spacer is used, and the diameter of the circle becomes a gap.

In the second connection region 926, the connection wiring 919 is connected to the signal line driver circuit formed by the IC chip 927 through the anisotropic conductive film 924. Note that the IC chip is provided on the FPC 906. When adhering the anisotropic conductive film by pressurization or heating, care should be taken not to cause cracks due to the flexibility of the film substrate and softening due to heating. For example, a highly rigid substrate may be disposed as an auxiliary in the adhesion region. A video signal and a clock signal are received from the IC chip thus connected.

When sealed with the second substrate 922, a space is formed between the protective film 918. The space can be filled with an inert gas, for example, nitrogen gas, or a material with high water absorption can be formed to further prevent moisture and oxygen from entering. Further, a resin having translucency and high water absorption may be formed. Even when light from the light-emitting element is emitted to the second substrate side with the light-transmitting resin, the resin can be formed without reducing transmittance.

FIG. 12B shows a case of sealing without using the second substrate, unlike FIG. 12A. Since other configurations are the same, description thereof is omitted.

In FIG. 12B, a second protective film 930 is provided so as to cover the protective film 918. An organic material such as an epoxy resin, a urethane resin, or a silicone resin can be used as the second protective film. The second protective film may be formed by dropping a polymer material by an ink jet method. In this embodiment mode, the epoxy resin is discharged using a dispenser and dried.

In the case where deterioration of the electroluminescent layer due to moisture, oxygen, or the like is not a problem, the protective film 918 is not necessarily provided. Further, a second substrate may be provided over the second protective film and sealed.

When sealing is performed without using the second substrate in this manner, the weight, size, and thickness of the display device can be improved.

In this embodiment mode, a polarizing plate or a circular polarizing plate may be provided to increase contrast. For example, a polarizing plate or a circularly polarizing plate can be provided on one surface or both surfaces of the display surface.

(Embodiment 16)
As electronic devices using the display device described in the above embodiment, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproducing device (car audio, audio component, etc.), a notebook type personal computer , Game devices, portable information terminals (mobile computers, mobile phones, portable game machines, electronic books, etc.), image playback devices equipped with recording media (specifically, digital Versatile Disc (DVD) and other recording media) And a device provided with a display capable of displaying the image). In particular, it is desirable to use the ink jet method described in the above embodiment mode for a large television having a large screen. Specific examples of these electronic devices are shown in FIGS.

FIG. 13A illustrates a large display device including a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. The display portion 2003 is provided with a module having a pixel portion and a driver circuit portion. The pixel portion includes a light emitting element or a liquid crystal element and includes a TFT formed by the ink jet method described in the above embodiment mode. The display devices include all information display devices for personal computers, for receiving TV broadcasts, for displaying advertisements, and the like.

FIG. 13B illustrates a mobile phone among mobile terminals, which includes a main body 2101, a housing 2102, a display portion 2103, a sound input portion 2104, a sound output portion 2105, operation keys 2106, an antenna 2107, and the like. The display portion 2103 is provided with a module having a pixel portion and a driver circuit portion. The pixel portion includes a light emitting element or a liquid crystal element and includes a TFT formed by the ink jet method described in the above embodiment mode. Furthermore, the cost of the cellular phone can be reduced by forming the display portion 2103 by multi-cavity.

FIG. 13C shows a sheet type mobile phone, which includes a main body 2301, a display portion 2303, an audio input portion 2304, an audio output portion 2305, a switch 2306, an external connection port 2307, and the like. A separately prepared earphone 2308 can be connected through the external connection port 2307. A touch panel display screen including a sensor is used for the display portion 2303, and a series of operations can be performed by touching a touch panel operation key 2309 displayed on the display portion 2303. The display portion 2303 is provided with a module having a pixel portion and a driver circuit portion. The pixel portion includes a light emitting element or a liquid crystal element and includes a TFT formed by the ink jet method described in the above embodiment mode. Further, by forming the display portion 2303 by multi-cavity, the cost of the sheet type mobile phone can be reduced.

As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. In addition, any of the structures described in the above embodiments can be used for the electronic device of this example.

1 is a cross-sectional view illustrating a thin film transistor of the present invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention. Sectional drawing which showed the liquid crystal display device of this invention. 2A and 2B are an equivalent circuit diagram and a top view illustrating a pixel of a light emitting device of the present invention. Sectional drawing which showed the light-emitting device of this invention. The top view which showed the display apparatus of this invention. Sectional drawing which showed the display apparatus of this invention. FIG. 14 illustrates an electronic device of the invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention. The figure which showed the plasma processing apparatus of this invention. The figure which showed the droplet discharge apparatus of this invention. The figure which showed the droplet discharge apparatus of this invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention. The top view which showed the display apparatus of this invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention. 1 is a cross-sectional view illustrating a thin film transistor of the present invention.

Claims (30)

Liquid repellent treatment is performed on the wiring surface,
A lyophilic treatment is selectively performed on the region subjected to the lyophobic treatment,
A method for manufacturing a wiring, comprising: forming a wiring in a region subjected to the lyophilic treatment by dropping a composition mixed with the wiring material. Form a liquid-repellent area on the wiring surface,
Selectively forming a lyophilic region in the liquid repellent region;
A method for manufacturing a wiring, wherein the wiring is formed in the lyophilic region by dropping a composition mixed with the wiring material. A liquid-repellent region is formed by plasma treatment on the formation surface of the wiring,
Selectively forming a lyophilic region in the liquid repellent region;
A method for manufacturing a wiring, wherein the wiring is formed in the lyophilic region by dropping a composition mixed with the wiring material. In claim 3,
A method for manufacturing a wiring, wherein the plasma treatment is performed at a pressure of 100 Torr to 1000 Torr. In claim 3 or 4,
A method for manufacturing a wiring, wherein air, oxygen, or nitrogen is used as a processing gas, and the plasma treatment is performed at atmospheric pressure or a pressure near atmospheric pressure. Forming a liquid repellent region by forming a film having fluorine on the wiring formation surface,
Selectively forming a lyophilic region in the liquid repellent region;
A method for manufacturing a wiring, wherein the wiring is formed in the lyophilic region by dropping a composition mixed with the wiring material. In claim 6,
A method for manufacturing a wiring, wherein a liquid repellent region is formed by forming a Teflon film or a silane coupling agent. In any one of Claims 2 thru | or 7,
A method for manufacturing a wiring, wherein a lyophilic region is selectively formed by irradiating the liquid repellent region with laser light. In any one of Claims 2 thru | or 8,
A method for manufacturing a wiring, wherein a region having a lower liquid repellency than a liquid repellent region is formed as the lyophilic region. In any one of Claims 1 thru | or 9,
A method for manufacturing a wiring, wherein the composition is dropped using an inkjet method. Liquid-repellent treatment is performed on the surface on which the conductor is formed,
A lyophilic treatment is selectively performed on the region subjected to the lyophobic treatment,
A method for manufacturing a thin film transistor, wherein a conductive film is formed in a region where the lyophilic treatment is performed by dropping a composition mixed with the conductive film material. Forming a liquid-repellent region on the surface of the conductor,
Selectively forming a lyophilic region in the liquid repellent region;
A method for manufacturing a thin film transistor, wherein a conductive film is formed in the lyophilic region by dropping a composition mixed with the conductive film material. A plasma treatment is performed on the formation surface of the gate electrode to form a first liquid repellent region,
Selectively forming a first lyophilic region in the first liquid repellent region;
A gate electrode is formed in the first lyophilic region by dropping a composition mixed with the gate electrode material,
Plasma treatment is performed on the source electrode and drain electrode formation surfaces to form a second liquid repellent region,
Selectively forming a second lyophilic region in the second lyophobic region;
A method for manufacturing a thin film transistor, wherein a source electrode and a drain electrode are formed in the second lyophilic region by dropping a composition mixed with the source and drain electrode materials. Plasma treatment is performed on the substrate to form a first liquid repellent region;
Selectively forming a first lyophilic region in the first liquid repellent region;
Forming a gate electrode in the first lyophilic region of the substrate by dropping a composition mixed with the gate electrode material;
Forming a gate insulating film covering the gate electrode;
Forming a semiconductor film on the gate electrode;
Forming a semiconductor film having one conductivity type on the semiconductor film;
Plasma treatment is performed on the semiconductor film having one conductivity type and the gate insulating film to form a second liquid repellent region,
Selectively forming a second lyophilic region in the second lyophobic region;
A source electrode and a drain electrode are formed in the second lyophilic region of the semiconductor film having one conductivity type and the gate insulating film by dropping a composition mixed with the source electrode and drain electrode materials. A method for manufacturing a thin film transistor. Forming a source electrode and a drain electrode;
Forming a semiconductor film on the source and drain electrodes;
Plasma treatment is performed on the gate electrode formation surface above the semiconductor film to form a liquid repellent region,
Selectively forming a lyophilic region in the liquid repellent region;
A method for manufacturing a thin film transistor, wherein a gate electrode is formed in the lyophilic region of the gate electrode formation surface by dropping a composition mixed with the gate electrode material. A source electrode and a drain electrode are formed on the base film,
Forming a semiconductor film on the source and drain electrodes;
Plasma treatment is performed on the semiconductor film to form a first liquid repellent region,
Selectively forming a first lyophilic region in the first liquid repellent region;
By dropping a composition mixed with a mask material, a mask is formed in the first lyophilic region of the semiconductor film,
Patterning the semiconductor film using the mask;
Forming a gate insulating film covering the semiconductor film;
A plasma treatment is performed on the gate insulating film to form a second liquid repellent region;
Selectively forming a second lyophilic region in the second lyophobic region;
A method for manufacturing a thin film transistor, wherein a gate electrode is formed in the second lyophilic region of the gate insulating film by dropping a composition mixed with a gate electrode material. Plasma treatment is performed on the base film to form a first liquid repellent region,
Selectively forming a first lyophilic region in the first liquid repellent region;
A source electrode and a drain electrode are formed in the first lyophilic region of the base film by dropping a composition mixed with a source electrode and a drain electrode material,
Forming a semiconductor film on the source and drain electrodes;
A plasma treatment is performed on the semiconductor film to form a second liquid-repellent region;
Selectively forming a second lyophilic region in the second lyophobic region;
By dropping a composition mixed with a mask material, a mask is formed in the second lyophilic region of the semiconductor film,
Patterning the semiconductor film using the mask;
Forming a gate insulating film covering the semiconductor film;
A plasma treatment is performed on the gate insulating film to form a third liquid repellent region,
Selectively forming a third lyophilic region in the third lyophobic region;
A method for manufacturing a thin film transistor, wherein a gate electrode is formed in the third lyophilic region of the gate insulating film by dropping a composition mixed with a gate electrode material. In any one of Claims 12 thru | or 17,
A method for manufacturing a thin film transistor, wherein the liquid-repellent region is formed by plasma treatment. In any one of Claims 12 thru | or 18,
A method for manufacturing a thin film transistor, wherein the liquid repellent region is formed by forming a CF ₂ bond on the surface to be formed using the plasma treatment. Forming a film having fluorine;
A lyophilic region is selectively formed on the fluorine-containing film,
By dropping a composition mixed with a gate electrode material, a gate electrode is formed in the lyophilic region,
A method for manufacturing a thin film transistor, wherein heat treatment is performed in order to fire the gate electrode, and the fluorine-containing film is removed by the heat treatment. Forming a first fluorine-containing film;
Selectively forming a lyophilic region in the first fluorine-containing film;
By dropping a composition mixed with a gate electrode material, a gate electrode is formed in the lyophilic region,
A heat treatment is performed to fire the gate electrode, and the film having the first fluorine is removed by the heat treatment,
Forming a gate insulating film covering the gate electrode;
Forming a semiconductor film on the gate electrode;
Forming a semiconductor film having one conductivity type on the semiconductor film;
Forming a second fluorine-containing film on the semiconductor film having one conductivity type and the gate insulating film;
Selectively forming a second lyophilic region in the second fluorine-containing film;
By dropping a composition mixed with a source electrode and a drain electrode material, a source electrode and a drain electrode are formed in the second lyophilic region of the semiconductor film having the one conductivity type and the gate insulating film,
A method for manufacturing a thin film transistor, wherein heat treatment is performed to bak the source electrode and the drain electrode, and the second fluorine-containing film is removed by the heat treatment. In claim 20 or 21,
A method for manufacturing a thin film transistor, comprising forming a film containing Teflon or a silane coupling agent as the film containing fluorine. In any one of Claims 11 thru | or 22,
Forming an interlayer insulating film on the thin film transistor;
Forming an opening in the interlayer insulating film;
Plasma treatment is performed on the interlayer insulating film in which the opening is formed to form a liquid-repellent region on the surface of the opening and the interlayer insulating film,
Selectively forming a lyophilic region at the opening in the liquid repellent region;
A method for manufacturing a thin film transistor, wherein a wiring connected to a source electrode or a drain electrode of the thin film transistor through the opening is formed by dropping a composition mixed with a wiring material. 24. Any one of claims 12 to 23.
A method for manufacturing a wiring, wherein a lyophilic region is selectively formed by irradiating the liquid repellent region with laser light. 25. Any one of claims 11 to 24.
A method for manufacturing a thin film transistor, wherein the composition is dropped using an inkjet method. In a processing chamber having a droplet discharge means and a light irradiation means,
By the light irradiation means, the lyophilic region is formed by selectively irradiating light on the object on which the liquid repellent region is formed,
A droplet discharge method, wherein the droplet discharge means discharges droplets to the lyophilic region. A first processing chamber having plasma processing means and a dielectric;
Using a processing apparatus in which a second processing chamber having a droplet discharge unit and a light irradiation unit is arranged,
In the first processing chamber, using the plasma processing means and the dielectric, a liquid repellent region is formed on an object to be processed,
Transporting the object to be processed to the second processing chamber without being exposed to the atmosphere;
In the second processing chamber, a lyophilic region is selectively formed by the light irradiating means on the object on which the lyophobic region is formed, and the lyophilic liquid is formed by the droplet discharge means. A method for ejecting liquid droplets, characterized by ejecting liquid droplets to the active region. In claim 26 or 27,
The droplet discharge method, wherein the droplet discharge means and the light irradiation means are integrally formed. A device according to any one of claims 26 to 28.
The droplet ejection method, wherein the light irradiation means includes a laser beam. A method according to any one of claims 26 to 29.
A droplet discharge method, wherein the composition is dropped using an inkjet method.

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