JP2005159273A - Magnetic-electric conversion element, magnetism detecting device, and earth magnetism sensor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To conduct magnetism detection in orthogonal three-axis directions with high accuracy by a small-sized sensor. <P>SOLUTION: A magnetic-electric conversion element 21, whose sensing axis is set in the Z axis direction is sandwiched by a magnetic portion 11 and a portion covering a recess 31 among magnetic portions 40. A magnetic-electric conversion element 22 whose sensing axis is set in the X axis direction is sandwiched by the magnetic portion 11and a magnetic portion 12. A magnetic-electric conversion element 23 whose sensing axis is set in the Y axis direction is sandwiched by the magnetic portion 11 and a magnetic portion 13. The magnetic-electric conversion elements 21 to 23 are formed on an SOI (semiconductor on insulator) layer 3 of an SOI substrate 10. The almost plate-shaped magnetic portions 11 to 13 are formed on the SOI layer 3 and a buried oxide film 2 and have steps 51 to 53 in the Z axis direction. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a magnetic detection device suitable for use in an electronic compass that detects orientation based on geomagnetism, a geomagnetic sensor using the same, and a magnetoelectric conversion element suitable for use in the magnetic detection device.

  In recent years, there has been an increasing demand for a portable GPS terminal device that can acquire position information using a GPS (Global Positioning System). Accordingly, demand for an electronic compass for detecting the direction (azimuth) of the GPS terminal device is increasing. The electronic compass requires a small magnetic detection device capable of magnetic detection in three orthogonal axes in order to detect geomagnetism regardless of the attitude of the GPS terminal device.

  As this type of magnetic detection device, as disclosed in Patent Document 1, for example, a device including a Hall element and a magnetic flux focusing element that focuses a magnetic flux on the Hall element is known. FIG. 36 is a diagram showing a conventional magnetic detection device described in Patent Document 1, FIG. 36 (a) is a longitudinal sectional view of this magnetic detection device, and FIG. 36 (b) is the same as seen from the back side. FIG. 36C is a perspective view of the apparatus, and FIG. 36C is an operation explanatory view of the apparatus. In this magnetic detection device 150, a Hall element 115 that is a magnetoelectric conversion element is formed on a first main surface 113 of a semiconductor substrate 111 that uses silicon as a base material, and a Hall element on the second main surface 117 side. An etching groove 119 having a trapezoidal vertical cross section reaching the vicinity of the Hall element 115 is formed in a portion facing the 115. The etching groove 119 has a rectangular bottom surface 120 facing the hall element 115 and four trapezoidal inclined surfaces surrounding the bottom surface 120. That is, the etching groove 119 is formed in a tapered shape so that the diameter becomes smaller as it approaches the bottom surface 120 from the second main surface 117. In the etching groove 119, a magnetic part 121 made of a high permeability material such as permalloy or ferrite is embedded in order to focus an external magnetic field on the Hall element 115. Further, an insulating film 125 is formed on the first main surface 113 of the semiconductor substrate 111, and a magnetic film 127 is stacked at a position facing the Hall element 115 through the insulating film 125. Is formed.

  In the magnetic detection device 150 configured as described above, the Hall voltage output from the Hall element 115 is the normal direction Z of the first main surface 113 and the second main surface 117 of the semiconductor substrate 111, that is, the sensitivity of the Hall element 115. When the external magnetic field H is directed in the axial direction, the Hall element 115 exhibits maximum sensitivity. In general, the Hall voltage output from the Hall element 115 is proportional to the component in the normal direction Z of the external magnetic field H. Therefore, when the external magnetic field H is a magnetic field having a certain direction and strength as in the case of geomagnetism, the Hall voltage changes as the angle θ at which the external magnetic field H intersects the normal direction Z changes. It changes in proportion to H · cos θ. Therefore, the direction θ of the external magnetic field H can be detected by measuring the Hall voltage.

However, the strength of the magnetic field due to geomagnetism is about 0.3 gauss (= 3 × 10 ⁻⁵ Tesla) in Tokyo, which is relatively small with respect to the detection sensitivity of the Hall element 115. Therefore, in order to increase the detection accuracy, it is necessary to increase the magnetic flux density that passes through the Hall element 115. In the magnetic detection device 150 shown in FIG. 36, by providing the magnetic body portion 121 and the magnetic body film 127 that face each other in the sensitivity axis direction of the Hall element 115, the magnetic flux density is made higher than the magnetic flux density due to the external magnetic field H, thereby The sensitivity of the element 115 as a magnetic detection element is improved. The magnetic detection device 150 also has an advantage that the etching groove 119 can be easily formed by performing anisotropic etching using the plane orientation of the single crystal silicon substrate.

  However, in the magnetic detection device 150, the etching groove 119 is formed in a tapered trapezoidal shape reaching the vicinity of the Hall element 115, so that the inclined surface is not passed through the bottom surface 120 of the etching groove 119, that is, the Hall element 115. More magnetic flux passes through. That is, there is a problem that a part of the magnetic flux converged by the magnetic part 121 and the magnetic film 127 is likely to leak without passing through the Hall element 115 and the effect of converging the magnetic flux is small compared to the chip size. . In addition, when the etching groove 119 is formed by anisotropic etching using the plane orientation of silicon, etc., it becomes a relatively large groove, so that the strength of the semiconductor substrate 111 is reduced, and thereby, wire bonding or resin in a later process is reduced. There was a problem that failure was likely to occur during formation.

  Further, the magnetic detection device 150 can only detect the component of the external magnetic field H along the sensitivity axis direction of the Hall element 115 that is the normal direction Z of the first main surface 113 and the second main surface 117. . That is, the magnetic detection device 150 is a uniaxial magnetic detection device, and there is a problem that the magnetic detection in the three orthogonal directions necessary for the electronic compass cannot be performed by the single magnetic detection device 150 alone. Further, in order to enable magnetic detection in three orthogonal axes, it is necessary to use three magnetic detection devices 150 in combination. In this case, the sensitivity axes of the three magnetic detection devices 150 are orthogonal to each other. Therefore, there is a problem that a high-precision mounting technique is required to arrange them. Further, in that case, an extra area such as a die bond and a wiring region is required, so that there is a problem that the size of the mounted product becomes large.

  Further, the applicant of the present application has focused on a semiconductor diode magnetic sensor as a magnetoelectric conversion element particularly desirable for use in the magnetic detection device 150 from the viewpoint of miniaturization of the magnetic detection device 150 and power saving. FIG. 37 is a perspective view showing a configuration of a conventional semiconductor diode magnetic sensor disclosed in Patent Document 2 (hereinafter abbreviated as “diode magnetic sensor” as appropriate). The diode magnetic sensor 160 is formed on a buried oxide film 165 made of silicon dioxide and formed on a support substrate 166 made of single crystal silicon. That is, the diode magnetic sensor 160 is formed on the SOI layer 167 of the semiconductor substrate 168 formed as an SOI (Semiconductor On Insulator) substrate.

The diode magnetic sensor 160 includes a p ⁺ type anode region 162, an n ⁺ type cathode region 163, and a p ⁻ type high resistance region 161. A recombination layer 164 is formed on the upper surface of the high resistance region 161. The recombination layer 164 is formed by introducing defects or the like on the upper surface of the high resistance region 161, and functions as a layer that promotes carrier recombination.

  In order to use the diode magnetic sensor 160, a forward bias is applied between the anode region 162 and the cathode region 163. Thereby, a double injection state of carriers is formed in the high resistance region 161. In this state, when an external magnetic field H is applied in a direction parallel to the main surface of the semiconductor substrate 168 and perpendicular to the axis connecting the anode region 162 and the cathode region 163, electrons and holes that are double injection carriers. The traveling direction is bent by the Lorentz force resulting from the external magnetic field H. If the direction of the external magnetic field H is the direction shown in the figure, the traveling direction of electrons and holes is bent toward the recombination layer 164. As a result, the number of flowing carriers is reduced by being easily eliminated by recombination, so that double injection is suppressed and the diode resistance is increased. Thereby, the current flowing between the anode region 162 and the cathode region 163 decreases.

  On the other hand, if the direction of the external magnetic field H is opposite to the illustrated direction, the traveling direction of electrons and holes is bent to the opposite side of the recombination layer 164. As a result, the carrier recombination is less likely to occur, so that the double-injected carrier flows sufficiently and the diode resistance is lowered. Thereby, the current flowing between the anode region 162 and the cathode region 163 increases.

Therefore, by using the diode magnetic sensor 160, the direction or magnitude of the external magnetic field H can be detected through a current change. The diode magnetic sensor 160 has an advantage that power consumption is low in addition to being able to be formed in a small size. Therefore, it is suitable for use in the magnetic detection device 150.
JP 11-261131 A (paragraph [0024] to paragraph [0032] and FIG. 1) JP 2002-134758 A

  However, in the diode magnetic sensor 160 disclosed in Patent Document 2, the recombination layer 40 is formed on the upper surface of the high resistance region 161, that is, a surface parallel to the main surface of the semiconductor substrate 168. For this reason, the direction of the sensitivity axis of the diode magnetic sensor 160 is a direction along the main surface of the semiconductor substrate 168. That is, the conventional diode magnetic sensor 160 cannot be applied to a device that detects the external magnetic field H along the normal direction Z of the main surface 113 of the semiconductor substrate 111, such as the magnetic detection device 150. It was. This means that even if a magnetic detection device that enables magnetic detection in three axial directions using a single substrate is realized, the conventional diode magnetic sensor 160 cannot be applied to the magnetic detection device. It also means that.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a magnetic detection device that improves the convergence effect of magnetic flux and increases the mechanical strength. Another object of the present invention is to provide a magnetic detection device that can perform magnetic detection in three orthogonal axes in a small size and with high accuracy. Another object of the present invention is to provide a geomagnetic sensor using these magnetic detection devices. Another object of the present invention is to provide a magnetoelectric conversion element suitable for use in the magnetic detection device of the present invention.

  In order to solve the above problems and achieve the above object, the first aspect of the present invention is a magnetoelectric conversion element formed on the main surface of a semiconductor substrate, comprising an anode region which is a p-type semiconductor region, and A cathode region that is an n-type semiconductor region; a high resistance region that is sandwiched between the anode region and the cathode region and has a lower impurity concentration than any of the anode region and the cathode region; and And a recombination layer formed on at least a part of one side surface connecting the anode region and the cathode region and having a recombination center introduced therein.

  According to a second aspect of the present invention, there is provided the magnetoelectric conversion element according to the first aspect, wherein the one side surface is substantially perpendicular to the main surface. Here, “substantially vertical” is intended to allow a range of accuracy in the manufacturing process.

  According to a third aspect of the present invention, there is provided the magnetoelectric conversion element according to the first aspect, wherein the one side surface is inclined with respect to the main surface so as to face obliquely above the main surface. Is.

  According to a fourth aspect of the present invention, in the magnetoelectric conversion element according to any one of the first to third aspects, the semiconductor substrate is an SOI substrate, and the magnetoelectric conversion element is included in the SOI substrate. It is formed in the SOI layer.

  According to a fifth aspect of the present invention, there is provided a magnetoelectric conversion element according to any one of the first to fourth aspects, wherein the magnetoelectric conversion element is formed in a substantially U shape in plan view, and the anode The region is formed at one tip of the pair of substantially U-shaped legs, the cathode region is formed at the other tip of the pair of legs, and the recombination layer is Of the resistance region, the pair of leg portions are formed on the side surfaces facing each other, or the pair of leg portions are formed on the side surfaces facing each other. Here, the “substantially U-shape” is not strictly limited to the “U” character shape, and is a shape having a pair of parallel leg portions and their connecting portions within a range of accuracy in the manufacturing process. In other words, it is intended to include those that approximately have a “U” character shape. Accordingly, “substantially U-shaped” includes “U-shaped”.

  According to a sixth aspect of the present invention, there is provided a magnetoelectric conversion element comprising a first magnetoelectric conversion element and a second magnetoelectric conversion element formed on a main surface of the same semiconductor substrate, wherein the first magnetoelectric conversion element is provided. Each of the element and the second magnetoelectric conversion element is a magnetoelectric conversion element according to any one of the first to fourth aspects, and the first magnetoelectric conversion element and the second magnetoelectric conversion element have the same forward current. The first magnetoelectric conversion element and the second magnetoelectric conversion element are formed so as to extend along a linear axis connecting the anode region and the cathode region. The first magnetoelectric conversion element and the second magnetoelectric conversion element are substantially parallel to each other and are arranged so that the respective high resistance regions are arranged side by side, and the recombination layer of the first magnetoelectric conversion element The recombination layer of the second magnetoelectric conversion element is the corresponding high resistance region At least a portion of one another facing side or mutually facing outer sides of the one in which are formed, respectively.

  According to a seventh aspect of the present invention, there is provided a magnetoelectric conversion element comprising first to fourth magnetoelectric conversion element portions formed on a main surface of the same semiconductor substrate, wherein the first to fourth magnetoelectric conversion elements are provided. Each of the element units is a magnetoelectric conversion element according to any one of the first to sixth aspects, and the first magnetoelectric conversion element unit and the fourth magnetoelectric conversion element unit are connected in series so that the same forward current flows. The second magnetoelectric conversion element unit and the third magnetoelectric conversion element unit are connected in series so that the same forward current flows to form a second series circuit. The first series circuit and the second series circuit are connected in parallel so that forward currents are shunted, respectively, and the recombination layer of the first magnetoelectric conversion element section and the third magnetoelectric conversion Each of the recombination layers of the element part is a forward current out of the side surfaces of the corresponding high resistance region. Each of the recombination layer of the second magnetoelectric conversion element portion and the recombination layer of the fourth magnetoelectric conversion element portion is formed on at least a part of the side surface located on the right side in plan view with respect to the traveling direction of Among the side surfaces of the corresponding high-resistance region, they are formed on at least a part of the side surface located on the left side in plan view with respect to the forward current traveling direction.

  According to an eighth aspect of the present invention, there is provided a magnetic detection device, comprising a flat semiconductor substrate, a magnetoelectric conversion element provided on the first main surface side of the semiconductor substrate, and a first of the semiconductor substrate. A first magnetic body portion provided on the main surface side of the semiconductor substrate so as to face the magnetoelectric conversion element, and a second magnetic body portion provided on the second main surface side of the semiconductor substrate. And the second magnetic body portion is set such that an interval between portions facing each other across the magnetoelectric conversion element is set to be smaller than an interval between other facing portions, and the semiconductor substrate is first from the second main surface side. A recess is provided toward the main surface, the bottom of the recess is opposed to the magnetoelectric conversion element, and the peripheral wall of the recess surrounding the bottom is in the normal direction of the first and second main surfaces. The second magnetic body portion is formed so as to cover at least the bottom portion while being formed substantially in parallel. And it is characterized in and.

  According to a ninth aspect of the present invention, there is provided the magnetic detection device according to the eighth aspect, wherein at least one of the first and second magnetic parts is formed substantially flat. It is what.

  According to a tenth aspect of the present invention, there is provided the magnetic detection device according to the eighth or ninth aspect, wherein the first and second magnetic body portions are opposed to each other with the magnetoelectric conversion element interposed therebetween. Are formed in a shape that protrudes toward each other.

  According to an eleventh aspect of the present invention, there is provided the magnetic detection device according to any of the eighth to tenth aspects, wherein the second magnetic body portion covers the bottom portion and the peripheral wall portion of the recess. It is characterized by being formed.

  According to a twelfth aspect of the present invention, there is provided a magnetic detection device according to any one of the eighth to eleventh aspects, wherein the magnetoelectric conversion elements in the first and second magnetic parts are opposed to each other. The opposing parts are formed in a shape that is flat and substantially parallel to each other.

  According to a thirteenth aspect of the present invention, there is provided the magnetic detection device according to any of the eighth to twelfth aspects, wherein the magnetoelectric conversion elements in the first and second magnetic body portions are opposed to each other. At least any one of the opposing parts to be performed has a smaller or the same area as the projected area of the part for detecting magnetism of the magnetoelectric conversion element onto the opposing part.

  According to a fourteenth aspect of the present invention, there is provided the magnetic detection device according to any one of the eighth to twelfth aspects, wherein the magnetoelectric conversion elements in the first and second magnetic body portions are opposed to each other. The two opposing parts have an area larger than the projected area of the part for detecting the magnetism of the magnetoelectric transducer on the opposing part.

  According to a fifteenth aspect of the present invention, there is provided the magnetic detection device according to any one of the eighth to fourteenth aspects, wherein the semiconductor substrate comprises a silicon single crystal substrate having a main surface orientation of (100), A portion of the recess on the opening surface side is formed by anisotropic etching.

  According to a sixteenth aspect of the present invention, there is provided a magnetic detection device according to any of the eighth to fifteenth aspects, wherein the three magnetoelectric conversions for detecting magnetism in each axial direction of a three-dimensional orthogonal coordinate system. An element is provided on the semiconductor substrate.

  According to a seventeenth aspect of the present invention, there is provided a magnetic detection device having a first main surface and a second main surface parallel to each other, and at least one of the first main surface and the second main surface. Formed on the semiconductor substrate, a first magnetoelectric conversion element formed on the semiconductor substrate and having a sensitivity axis set in a normal direction of the semiconductor substrate, and the semiconductor substrate. A second magnetoelectric conversion element having a sensitivity axis set in a direction perpendicular to the sensitivity axis of the first magnetoelectric conversion element, the sensitivity axis of the first magnetoelectric conversion element formed on the semiconductor substrate, and the second magnetoelectric element. A third magnetoelectric conversion element having a sensitivity axis set in a direction perpendicular to both the sensitivity axis of the conversion element and a pair orthogonal to the sensitivity axis of the first magnetoelectric conversion element and facing each other across the first magnetoelectric conversion element A first opposing surface pair, at least one of which is the concave portion. A pair of magnets formed on the first main surface side and the second main surface side on the semiconductor substrate so as to be closest to each other in the first opposing surface pair by being formed to cover each other. A second magnetic body portion formed on the semiconductor substrate so as to sandwich the second magnetoelectric conversion element in cooperation with a first magnetic body portion which is one of the pair of magnetic body pair portions; A third magnetic body portion formed on the semiconductor substrate so as to sandwich the third magnetoelectric conversion element in cooperation with the first magnetic body portion, and the first magnetic body portion and the second magnetic body portion The body portion includes a second opposing surface pair that is a pair of opposing surfaces that are orthogonal to the sensitivity axis of the second magnetoelectric conversion element and oppose each other with the second magnetoelectric conversion element interposed therebetween. The first magnetic body part and the third magnetic body part are formed so as to be closest to each other. It has a third opposed surface pair that is a pair of opposed surfaces that are orthogonal to the sensitivity axis of the magnetoelectric conversion element and are opposed to each other with the third magnetoelectric conversion element interposed therebetween, and is formed so that they are closest to each other in the third opposed surface pair. It is characterized by.

  According to an eighteenth aspect of the present invention, there is provided the magnetic detection device according to the seventeenth aspect, further comprising a fourth magnetic body portion formed on the semiconductor substrate, wherein the first to fourth magnetic elements are provided. The shape and position of the body part are determined so as to be ¼ rotationally symmetric about an axis of symmetry that is an axis along the normal direction.

  According to a nineteenth aspect of the present invention, there is provided the magnetic detection device according to the eighteenth aspect, wherein the sensitivity axis is set in the same direction as the sensitivity axis of the third magnetoelectric transducer formed on the semiconductor substrate. A fourth magnetoelectric conversion element formed on the semiconductor substrate, and a fifth magnetoelectric conversion element having a sensitivity axis set in the same direction as the sensitivity axis of the second magnetoelectric conversion element. The body part and the fourth magnetic body part are formed on the semiconductor substrate so as to sandwich the fourth magnetoelectric conversion element, and are orthogonal to the sensitivity axis of the fourth magnetoelectric conversion element and A fourth opposing surface pair that is a pair of opposing surfaces sandwiched therebetween, and is formed so as to be closest to each other in the fourth opposing surface pair; the third magnetic body portion and the fourth magnetic body portion; Is formed on the semiconductor substrate so as to sandwich the fifth magnetoelectric transducer. And a fifth opposed surface pair that is a pair of opposed surfaces that are orthogonal to the sensitivity axis of the fifth magnetoelectric conversion element and are opposed to each other with the fifth magnetoelectric conversion element interposed therebetween. It is formed so that it may touch.

  According to a twentieth aspect of the present invention, there is provided the magnetic detection device according to the eighteenth or nineteenth aspect, wherein the recess is selectively formed on at least one of the first main surface and the second main surface. A plurality of magnetic detection devices are formed on the semiconductor substrate, the sixth magnetoelectric conversion element being formed on the semiconductor substrate and having a sensitivity axis set in a normal direction of the semiconductor substrate. The shape and the position are determined so as to be ½ rotation symmetric about the symmetry axis together with the fifth magnetic body portion that is the other of the magnetic body pair that forms a pair with the first magnetic body portion. A sixth magnetic body portion, wherein the fourth magnetic body portion and the sixth magnetic body portion are orthogonal to the sensitivity axis of the sixth magnetoelectric conversion element and face each other with the sixth magnetoelectric conversion element interposed therebetween. A sixth opposed surface pair, at least one of which covers the recess. By being formed in this way, it is formed on one side and the other side of the first main surface and the second main surface on the semiconductor substrate so that they are closest to each other in the sixth opposed surface pair. It is characterized by.

  According to a twenty-first aspect of the present invention, there is provided the magnetic detection device according to the twentieth aspect, wherein the concave portions are selectively four or more on at least one of the first main surface and the second main surface. The magnetic detecting device is formed on the semiconductor substrate and has a sensitivity axis set in the normal direction. The seventh magnetoelectric conversion element is formed on the semiconductor substrate in the normal direction. An eighth magnetoelectric conversion element having a sensitivity axis; a seventh magnetic body portion formed on the semiconductor substrate; and an eighth magnetic body portion formed on the semiconductor substrate. The two magnetic body portions and the seventh magnetic body portion have a seventh facing surface pair that is a pair of facing surfaces that are orthogonal to the sensitivity axis of the seventh magnetoelectric conversion element and face each other with the seventh magnetoelectric conversion element interposed therebetween. And at least one of the seventh opposing surface is formed so as to cover the concave portion. Formed on one side and the other side of the first main surface and the second main surface on the semiconductor substrate so as to be closest to each other in a pair, the third magnetic body portion and the eighth magnetic body The section has an eighth opposed surface pair that is a pair of opposed surfaces that are orthogonal to the sensitivity axis of the eighth magnetoelectric conversion element and are opposed to each other with the eighth magnetoelectric conversion element interposed therebetween, so that at least one covers the recess. Are formed on one side and the other side of the first main surface and the second main surface on the semiconductor substrate so that they are closest to each other in the eighth opposing surface pair, The fifth to eighth magnetic body portions are defined in shape and position so as to be ¼ rotationally symmetric about the symmetry axis.

  According to a twenty-second aspect of the present invention, there is provided the magnetic detection device according to the twentieth or twenty-first aspect, wherein the fifth magnetic body part and the sixth magnetic body part are separated from each other. It is characterized by.

  According to a twenty-third aspect of the present invention, there is provided the magnetic detection device according to any one of the seventeenth to twenty-second aspects, wherein the recess is selectively formed in the second main surface. The first to third magnetoelectric conversion elements are formed on the first main surface side, and the first to third magnetic body portions are formed in a substantially flat plate shape along the first main surface. And

  According to a twenty-fourth aspect of the present invention, there is provided the magnetic detection device according to the twenty-third aspect, wherein each of the first to third magnetic body portions has a step in the normal direction. To do.

  According to a twenty-fifth aspect of the present invention, there is provided the magnetic detection device according to the twenty-third or twenty-fourth aspect, wherein the first magnetic body portion is a region adjacent to one of the second opposing surface pair. And a region adjacent to one of the third opposing surface pairs, having a region in which the width of the planar outline perpendicular to the sensitivity axis of the second magnetoelectric transducer decreases monotonously as it approaches the second magnetoelectric transducer The width of the outline in plan view perpendicular to the sensitivity axis of the third magnetoelectric conversion element monotonously decreases as the distance from the third magnetoelectric conversion element becomes closer to the third magnetoelectric conversion element. 2 is a region adjacent to the other of the pair of opposed surfaces, and has a region in which the width of the outline in plan view perpendicular to the sensitivity axis of the second magnetoelectric transducer decreases monotonously as it approaches the second magnetoelectric transducer, The third magnetic part is a region adjacent to the other of the third opposing surface pair. There are characterized in that the width of the plan view contour perpendicular to the sensitivity axis of the third electromagnetic element as close to the third electromagnetic element has a region monotonically decreases.

  According to a twenty-sixth aspect of the present invention, there is provided the magnetic detection device according to the twenty-third or twenty-fourth aspect, wherein the first magnetic body portion is a region adjacent to one of the second opposing surface pair. As a result, the closer to the second magnetoelectric conversion element, there is a region in which the width of the plan view outline perpendicular to the sensitivity axis of the second magnetoelectric conversion element decreases stepwise and adjacent to one of the third opposing surface pair The region has a region in which the width of the outline in plan view perpendicular to the sensitivity axis of the third magnetoelectric conversion element decreases stepwise as it approaches the third magnetoelectric conversion element, and the second magnetic body portion is An area adjacent to the other of the second opposing surface pair, and an area in which the width of the planar view outline perpendicular to the sensitivity axis of the second magnetoelectric conversion element decreases stepwise as it approaches the second magnetoelectric conversion element. And the third magnetic body portion is adjacent to the other of the third opposed surface pair. Wherein the width of the plan view contour perpendicular has a region of reduced stepwise the sensitivity axis of the third electromagnetic element as close to the third electric transducer an area.

  According to a twenty-seventh aspect of the present invention, there is provided a magnetic detection device according to any one of the twenty-third to twenty-sixth aspects, wherein the semiconductor substrate is an SOI substrate, and the first to third magnetic body portions. Each of these is formed in the SOI layer.

  According to a twenty-eighth aspect of the present invention, there is provided the magnetic detection device according to any of the seventeenth to twenty-second aspects, wherein three or more of the recesses are selectively formed on the first main surface. The first to third magnetic body portions are formed so as to individually cover the recesses, and the other of the magnetic body pair portions paired with the first magnetic body portion is formed on the second main surface. It is characterized by being formed in a substantially flat plate shape along.

  According to a twenty-ninth aspect of the present invention, there is provided the magnetic detection device according to any one of the twentieth to twenty-second and twenty-eighth aspects, wherein the semiconductor substrate has a rectangular outline in plan view, The outline of each opening is a rectangular shape whose sides are parallel to the outline of the semiconductor substrate in plan view.

  According to a thirtieth aspect of the present invention, there is provided the magnetic detection device according to the twenty-eighth aspect, wherein the semiconductor substrate has a rectangular outline in plan view, and the outline of each opening of the recess is the semiconductor. The substrate is characterized in that the outline in plan view and each side of the substrate are rectangles inclined at an angle of 45 °.

  According to a thirty-first aspect of the present invention, there is provided a magnetic detection device according to any one of the seventeenth to thirtieth aspects, wherein the second magnetoelectric conversion element has a plurality of magnetoelectric conversion elements having a sensitivity axis in the same direction. And the second opposed surface pair is divided into a plurality of opposed surface pairs that individually face the first element group, and the third magnetoelectric transducer has a sensitivity axis. The second element group is a plurality of magnetoelectric conversion elements having the same direction as each other, and the third opposed surface pair is divided and arranged in a plurality of opposed surface pairs individually facing the second element group. It is characterized by that.

  According to a thirty-second aspect of the present invention, there is provided a magnetic detection device, comprising: a semiconductor substrate having a main surface; and a sensitivity axis formed in a direction along the main surface and formed on the semiconductor substrate on the main surface side. And a first magnetic body portion formed on the semiconductor substrate on the main surface side, and a method of the method. A second magnetic body portion that is substantially flat and has a step in the line direction, and is formed on the semiconductor substrate on the main surface side so as to sandwich the magnetoelectric conversion element in cooperation with the first magnetic body portion. The first magnetic body portion and the second magnetic body portion have a pair of facing surfaces that are orthogonal to the sensitivity axis of the magnetoelectric conversion element and face each other with the magnetoelectric conversion element sandwiched therebetween, It is characterized in that they are formed so as to be closest to each other on the opposing surfaces.

  According to a thirty-third aspect of the present invention, there is provided the magnetic detection device according to any of the seventeenth to thirty-second aspects, wherein the semiconductor substrate has a square outline in plan view and is formed on the semiconductor substrate. All of the magnetoelectric transducers and all of the magnetic body portions are set in shape and position so as to be line-symmetric with respect to one diagonal line in the plan view outline of the semiconductor substrate.

  According to a thirty-fourth aspect of the present invention, there is provided the magnetic detection device according to any one of the eighth to thirty-third aspects, wherein all the magnetoelectric conversion elements formed on the semiconductor substrate are semiconductor diode magnetic elements. It is a sensor.

  According to a thirty-fifth aspect of the present invention is the magnetic detection apparatus according to the thirty-fourth aspect, wherein the normal direction of the main surface of the semiconductor substrate of the semiconductor diode magnetic sensor is the direction of the sensitivity axis. What is characterized is the magnetoelectric transducer of the present invention.

  According to a thirty-sixth aspect of the present invention is a geomagnetic sensor, comprising the magnetic detection device according to the present invention and an amplifier for amplifying an output signal of the magnetic detection device.

  According to the magnetoelectric transducer according to any one of the first to seventh aspects of the present invention, when a forward bias is applied between the anode region and the cathode region, the electron and hole doubles in the high resistance region. An injection state is formed. When an external magnetic field is applied in this state, the carriers flowing in the high resistance region are bent so that the traveling direction is directed to the side surface of the high resistance region due to the Lorentz force caused by the magnetic field component perpendicular to the main surface of the semiconductor substrate. . Depending on the direction of the magnetic field component, the carrier traveling direction is bent so as to be directed to either one side surface or the opposite side surface of the high resistance region where the recombination layer is formed. When the carrier is bent so that the traveling direction is toward the recombination layer, the recombination of the carrier is promoted, so the resistance of the magnetoelectric conversion element is increased, and conversely, the carrier is bent toward the opposite side of the recombination layer. As a result, the resistance of the magnetoelectric transducer decreases. That is, according to the magnetoelectric conversion element of the present invention, the magnitude and direction of the magnetic field component perpendicular to the main surface of the semiconductor substrate can be detected through the resistance of the magnetoelectric conversion element or the magnitude of the forward current. Therefore, the magnetoelectric conversion element of the present invention is suitable for use in a magnetic detection apparatus including a direction perpendicular to the main surface of the semiconductor substrate in the direction of the sensitivity axis, like the magnetic detection apparatus of the present invention.

  According to the magnetic detection device of the eighth aspect of the present invention, the convergence effect of the magnetic flux passing through the magnetoelectric conversion element is increased by the first and second magnetic body portions, and the second magnetic body portion is formed at the bottom. Since the peripheral wall portion is formed so that it is substantially parallel to the normal direction of the first and second main surfaces, the opening area of the recess can be made as small as possible. Mechanical strength is improved. Furthermore, since the opening area of the recess is substantially equal to the area of the bottom where the second magnetic body portion is formed, the area of the semiconductor substrate can be designed relatively freely.

  According to the magnetic detection device of the ninth aspect of the present invention, the structural design and manufacture of the magnetic body portion are facilitated by forming it substantially flat.

  According to the magnetic detection device of the tenth aspect of the present invention, the distance between the first and second magnetic parts in the part facing the magnetoelectric transducer is closer than the distance in the other part. The magnetic resistance of the magnetic path at can be easily reduced as compared with the magnetic resistance of the magnetic path at the other part, and as a result, the magnetic flux density passing through the facing part can be increased to improve the magnetic sensitivity.

  According to the magnetic detection device of the eleventh aspect of the present invention, the cross-sectional area of the magnetic path in the second magnetic body portion is increased, and the magnetic resistance in the second magnetic body portion is reduced to reduce the external magnetic resistance. Therefore, the magnetic flux leaking from the second magnetic part can be suppressed, and the magnetic flux can be more effectively converged on the magnetoelectric conversion element.

  According to the magnetic detection device of the twelfth aspect of the present invention, the parallel magnetic field along the normal direction is formed between the opposing portions in the first and second magnetic body portions. The sensitivity can be improved efficiently by matching the sensitivity axis of the conversion element.

  According to the magnetic detection device of the thirteenth aspect of the present invention, since almost all of the magnetic flux converged by the first and second magnetic bodies passes through the magnetic detection part of the magnetoelectric conversion element, the efficiency Thus, the sensitivity can be improved.

  According to the magnetic detection device of the fourteenth aspect of the present invention, even when a position shift occurs in the opposing portion of the first and second magnetic parts in the manufacturing process, the magnetic detection portion of the magnetoelectric conversion element is almost entirely covered. On the other hand, the magnetic flux that coincides with the sensitivity axis can be passed, and variations in characteristics during manufacturing can be reduced.

  According to the magnetic detection device of the fifteenth aspect of the present invention, it is possible to manufacture with a high throughput by an easier process without impairing the magnetic flux convergence effect and the area efficiency.

  With the magnetic detection device according to the sixteenth aspect of the present invention, a small magnetic detection device that can detect magnetism in three axial directions can be realized.

  According to the magnetic detection device of any one of the seventeenth to thirty-third aspects of the present invention, the first magnetic body portion is formed in the sensitivity axis direction of the first magnetoelectric conversion element by forming a pair of magnetic body pairs. The magnetic flux is focused on the first magnetoelectric conversion element, and at the same time, the magnetic flux in the sensitivity axis direction of the second magnetoelectric conversion element is focused on the second magnetoelectric conversion element in cooperation with the second magnetic body part, and jointed with the third magnetic body part. Then, the magnetic flux in the sensitivity axis direction of the third magnetoelectric conversion element is focused on the third magnetoelectric conversion element. For this reason, a magnetic detection device capable of detecting the magnetic force in the three orthogonal directions with a small size is realized. In addition, since the apparatus enables magnetic detection in three orthogonal axes by using a single semiconductor substrate, it is not necessary to align the axes when used for an electronic compass or the like, and high-precision magnetic detection is possible. .

  In addition, according to the magnetic detection device of the thirty-fourth or thirty-fifth aspect of the present invention, a semiconductor diode magnetic sensor is used as the magnetoelectric conversion element, thereby realizing a small and low power consumption magnetic detection device.

  Furthermore, since the geomagnetic sensor according to the thirty-sixth aspect of the present invention includes the magnetic detection device according to the present invention, it is possible to detect geomagnetism with high accuracy.

(Embodiment 1)
FIG. 1 is a diagram illustrating a configuration of a magnetoelectric conversion element according to Embodiment 1 of the present invention, in which a substrate and a magnetoelectric conversion element formed thereon are depicted. FIG. 1A is a perspective view of a structure including a substrate and a magnetoelectric conversion element. FIG.1 (b) is sectional drawing of the structure along the AA 'cutting line of Fig.1 (a). FIG. 1C is a cross-sectional view of the structure taken along the line BB ′ in FIG. The magnetoelectric conversion element 171 is formed on the semiconductor substrate 106. The semiconductor substrate 106 is formed as a silicon single crystal substrate.

The magnetoelectric conversion element 171 is formed as a diode magnetic sensor, and has a p ⁺ type anode region 102, an n ⁺ type cathode region 103, and a p ⁻ type high resistance region 101 sandwiched therebetween. . The magnetoelectric conversion element 171 is formed so as to extend along the linear axis in the order of the anode region 102, the high resistance region 101, and the cathode region 103. The high resistance region 101 may be i-type, that is, an intrinsic semiconductor, or may be n ⁻ type. A recombination layer 104 is formed on one side surface of the high resistance region 101 connecting the anode region 102 and the cathode region 103. The recombination layer 104 is formed by introducing a carrier recombination center such as a lattice defect on one side surface of the high resistance region 101, and functions as a layer that promotes carrier recombination.

  In order to use the magnetoelectric conversion element 171, a forward bias is applied between the anode region 102 and the cathode region 103. Thereby, a double injection state of carriers is formed in the high resistance region 101. In this state, when an external magnetic field H is applied in a direction perpendicular to the main surface of the semiconductor substrate 106, electrons and holes that are double injection carriers bend in the traveling direction due to Lorentz force caused by the external magnetic field H. It is done. If the direction of the external magnetic field H is the direction shown in the figure, the traveling direction of electrons and holes is bent toward the recombination layer 104. As a result, recombination of carriers is promoted, so that the diode resistance is increased. Thereby, the forward current flowing from the anode region 102 to the cathode region 103 decreases.

  On the other hand, if the direction of the external magnetic field H is opposite to the illustrated direction, the traveling direction of electrons and holes is bent to the opposite side of the recombination layer 104. As a result, carrier recombination hardly occurs, and the diode resistance is lowered. Thereby, the forward current flowing from the anode region 102 to the cathode region 103 increases.

  Therefore, by using the magnetoelectric conversion element 171, the magnitude and direction of the external magnetic field H perpendicular to the main surface of the semiconductor substrate 106 can be detected through a change in forward current. In other words, by using the magnetoelectric conversion element 171, a magnetic field component H in a direction perpendicular to the main surface of the semiconductor substrate 106 among external magnetic fields directed in an arbitrary direction can be detected. That is, the direction of the sensitivity axis of the magnetoelectric conversion element 171 is a direction perpendicular to the main surface of the semiconductor substrate 106, unlike the diode magnetic sensor 160 according to the prior art. In addition, the magnetoelectric conversion element 171 has an advantage specific to a diode magnetic sensor that can be formed in a small size and has low power consumption. Therefore, the magnetoelectric conversion element 171 is suitable for use in the magnetic detection device described in the seventh embodiment and thereafter.

In order to form the recombination layer 104, for example, after forming an island-shaped portion corresponding to the magnetoelectric conversion element 171 on the main surface of the semiconductor substrate 106, a resist film (not shown) is formed on the main surface of the semiconductor substrate 106. It is preferable to apply and form an opening in the resist film so that one side surface of the high resistance region 101 is exposed. Next, the recombination layer 104 can be formed by selectively sputtering the main surface of the semiconductor substrate 106 through the opening while flowing, for example, argon (Ar) gas and a small amount of oxygen (O ₂ ) gas. . The recombination layer 104 can also be formed by using a solution to chemically roughen the main surface of the semiconductor substrate 106 through the opening. It is also possible to form the recombination layer 104 by combining both physical sputtering and chemical reaction.

  Alternatively, by selectively injecting or diffusing gold (Au) or platinum (Pt) into the main surface of the semiconductor substrate 106 through the opening, a killer center is selectively introduced into the main surface of the semiconductor substrate 106, thereby It is also possible to form the recombination layer 104. After selectively forming defects on the main surface of the semiconductor substrate 106 through sputtering with argon gas ions, the vicinity of the defects is partially oxidized by performing thermal diffusion, or chemical treatment is performed, so that the aging due to crystallization occurs. Changes can be suppressed or prevented.

  In the anode region 102, for example, a resist film (not shown) having an opening at a portion where the anode region 102 is to be formed is formed on the main surface of the semiconductor substrate 106, and a p-type impurity is introduced through the opening. Can be formed. Similarly, in the cathode region 103, for example, a resist film (not shown) having an opening at a portion where the cathode region 103 is to be formed is formed on the main surface of the semiconductor substrate 106, and n-type impurities are introduced through the opening. It can form by introducing. Any order of forming the recombination layer 104, the anode region 102, and the cathode region 103 may be first.

  After or before the formation of the anode region 102 and the cathode region 103, as shown in FIG. 1, the peripheral region of the portion corresponding to the magnetoelectric conversion element 171 in the semiconductor substrate 106 (hereinafter simply referred to as “peripheral region”). By removing “tentatively”, a portion corresponding to the magnetoelectric conversion element 171 is formed in an island shape. By forming the magnetoelectric conversion element 171 in an island shape, when a forward bias is applied to the anode region 102 and the cathode region 103, the forward current flowing between them flows only through the high resistance region 101. . Thereby, the sensitivity with respect to the external magnetic field H of the magnetoelectric conversion element 171 improves.

  In order to remove the peripheral region of the semiconductor substrate 106, an ICP (Inductively Coupled Plasma) etching technique that is a vertical deep digging technique can be used. By using this technique, the etching side surface becomes a wall surface substantially perpendicular to the main surface of the semiconductor substrate 106. Thereby, a small magnetoelectric conversion element 171 can be obtained. Here, “substantially vertical” means vertical within the range of accuracy in the manufacturing process.

  Of the semiconductor substrate 106, only the periphery of the recombination layer 104 may be removed, and the other peripheral regions may be left without being removed. In this case, the magnetoelectric conversion element 171 occupies a part of the main surface of the semiconductor substrate 106 without being formed in an island shape. In this case, the peripheral region of the main surface of the semiconductor substrate 106 that is not removed is ion-implanted so that the peripheral region has a high resistance equivalent to that of the intrinsic semiconductor, or the peripheral region is partially oxidized. Therefore, it is desirable that the peripheral region be an insulator. As a result, the component flowing through the region other than the high resistance region 101 in the forward current flowing from the anode region 102 to the cathode region 103 due to the application of the forward bias is negligible compared to the component flowing through the high resistance region 101. Can be suppressed. That is, the sensitivity of the magnetoelectric conversion element 171 to the external magnetic field H can be increased.

  As shown in FIG. 1, the recombination layer 104 is preferably formed over the entire side surface of the high resistance region 101, but may be formed on a part of the side surface of the high resistance region 101. The function of detecting the external magnetic field H can be obtained accordingly.

(Embodiment 2)
FIG. 2 is a diagram showing a configuration of a magnetoelectric conversion element according to Embodiment 2 of the present invention, in which a substrate and a magnetoelectric conversion element formed thereon are depicted. FIG. 2A is a perspective view of a structure including a substrate and a magnetoelectric conversion element. FIG. 2B is a cross-sectional view of the structure taken along the line AA ′ in FIG. FIG. 2C is a cross-sectional view of the structure taken along the line BB ′ in FIG. This magnetoelectric conversion element 172 is different from the magnetoelectric conversion element 171 shown in FIG. 1 in that the side surface is inclined with respect to the main surface of the semiconductor substrate 106.

  For example, an unillustrated resist film that covers a portion corresponding to the magnetoelectric conversion element 172 is formed on the main surface of the semiconductor substrate 106, and then anisotropic etching using a solution is performed to thereby form the magnetoelectric conversion element 172. The side surface can be formed as an inclined surface. As the solution, for example, KOH (potassium hydroxide) or TMAH (hydroxide) can be used. For example, when the main surface of the semiconductor substrate 106 made of single crystal silicon, that is, the (100) surface is etched, the (111) surface having an angle of 54.74 ° with respect to the main surface of the semiconductor substrate 106 becomes the magnetoelectric conversion element. 172 is obtained as a side surface.

  As described above, the side surface of the magnetoelectric conversion element 172 is formed as an inclined surface facing obliquely above the main surface of the semiconductor substrate 106, so that the side surface of the high resistance region 101 when viewed from above the main surface of the semiconductor substrate 106 is formed. The projected area is larger than that in the case of the magnetoelectric conversion element 171. For this reason, the process of forming the recombination layer 104 by sputtering using argon gas becomes easier.

(Embodiment 3)
FIG. 3 is a perspective view showing a configuration of a magnetoelectric conversion element according to Embodiment 3 of the present invention, in which a substrate and a magnetoelectric conversion element formed thereon are drawn. This magnetoelectric conversion element 173 is different from the magnetoelectric conversion element 171 shown in FIG. 1 in that it has a pair of magnetoelectric conversion elements 171 connected in series. The pair of magnetoelectric transducers 171 are arranged on the main surface of the semiconductor substrate 106 so that forward currents flow in substantially parallel directions opposite to each other. Here, “substantially parallel” means parallel within the range of accuracy in the manufacturing process.

  Further, the high resistance regions 101 of the pair of magnetoelectric conversion elements 171 are formed so as to be arranged side by side. Further, the recombination layers 104 of the pair of magnetoelectric conversion elements 171 are formed in opposite directions, and in particular in FIG. 3, they are formed on the side surfaces of the pair of high resistance regions 101 facing each other. One anode region 102 and the other cathode region 103 of the pair of magnetoelectric conversion elements 171 are electrically connected by a connection wiring 107 made of a conductor such as aluminum, for example. Thereby, the pair of magnetoelectric transducers 171 are connected in series so that forward current flows in common. Since the wiring technique itself using aluminum or the like is well known, the shape of the connection wiring 107 is schematically illustrated in FIG.

  When an external magnetic field H is applied in a direction perpendicular to the main surface of the semiconductor substrate 106 with a forward bias applied to the magnetoelectric conversion element 173, electrons and holes that are double injection carriers are applied to the external magnetic field H. The traveling direction can be bent by the resulting Lorentz force. If the direction of the external magnetic field H is the direction shown in the drawing, the traveling direction of electrons and holes is bent toward the recombination layer 104 in any of the pair of magnetoelectric transducers 171. As a result, recombination of carriers is promoted, so that the diode resistance is increased. Thereby, the forward current flowing through the magnetoelectric conversion element 173 decreases.

  On the other hand, if the direction of the external magnetic field H is opposite to the illustrated direction, the traveling direction of electrons and holes is bent to the opposite side of the recombination layer 104. As a result, carrier recombination hardly occurs, and the diode resistance is lowered. Thereby, the forward current flowing through the magnetoelectric conversion element 173 increases. Therefore, by using the magnetoelectric conversion element 173, the magnitude and direction of the external magnetic field H perpendicular to the main surface of the semiconductor substrate 106 can be detected through a current change, similarly to the magnetoelectric conversion elements 171 and 172.

  In the magnetoelectric conversion elements 171 and 172, it is important to accurately form the recombination layer 104 corresponding to the sensitive part to the external magnetic field H on one side surface of the high resistance region 101. If the position of the recombination layer 104 varies, the sensitivity to the external magnetic field H varies accordingly. On the other hand, in the magnetoelectric conversion element 173, even if there is a positional shift in a mask for pattern transfer using lithography on an unillustrated resist film used when forming the recombination layer 104, the magnetoelectric conversion element 173 is used. As a whole, the influence of misalignment can be offset.

  More specifically, when one recombination layer 104 of the pair of magnetoelectric transducers 171 is formed thicker than the target by the mask displacement, the other recombination layer 104 is thicker than the target. The thickness D is thin. As a result, as the whole of the magnetoelectric conversion element 173, a target forward current flows for the same external magnetic field H. As described above, the magnetoelectric conversion element 173 suppresses fluctuations in sensitivity due to mask displacement, thereby realizing highly accurate magnetic field detection.

  The recombination layer 104 can also be formed on the side surfaces of the pair of high resistance regions 101 that face each other. In this case as well, the effect of suppressing sensitivity fluctuations due to mask displacement can be obtained in the same manner. The same effect can be obtained by using a pair of magnetoelectric conversion elements 172 instead of the pair of magnetoelectric conversion elements 171.

(Embodiment 4)
FIG. 4 is a perspective view showing a configuration of a magnetoelectric conversion element according to Embodiment 4 of the present invention, in which a substrate and a magnetoelectric conversion element formed thereon are depicted. This magnetoelectric conversion element 174 is different from the magnetoelectric conversion element 171 shown in FIG. 1 in that it is formed on the main surface of the semiconductor substrate 106 in a substantially U shape in plan view. An anode region 102 is formed at one tip of a pair of leg portions of a substantially U-shaped magnetoelectric conversion element 174 in plan view, and a cathode region 103 is formed at the other tip. A recombination layer 104 is formed on the side surfaces of the pair of leg portions and facing each other in the high resistance region 101 connecting the anode region 102 and the cathode region 103.

  When a forward bias is applied to the magnetoelectric conversion element 174 and an external magnetic field H is applied in a direction perpendicular to the main surface of the semiconductor substrate 106 and in the direction shown in the figure, the positive and negative electrons are detected in any of the pair of legs. The traveling direction of the hole is bent toward the recombination layer 104. As a result, the forward current flowing through the magnetoelectric conversion element 174 decreases. On the other hand, if the direction of the external magnetic field H is opposite to the illustrated direction, the traveling direction of electrons and holes is bent to the opposite side of the recombination layer 104. As a result, the forward current flowing through the magnetoelectric conversion element 174 increases. Therefore, by using the magnetoelectric conversion element 174, the magnitude and direction of the external magnetic field H perpendicular to the main surface of the semiconductor substrate 106 can be detected through a current change, similarly to the magnetoelectric conversion elements 171 to 173.

  The magnetoelectric conversion element 174 also suppresses fluctuations in sensitivity due to mask misalignment due to the same effect as the magnetoelectric conversion element 173, thereby realizing highly accurate magnetic field detection. Further, the recombination layer 104 can be formed on the side surfaces of the pair of legs and facing each other in the high resistance region 101. In this case as well, the effect of suppressing sensitivity fluctuations due to mask displacement can be obtained in the same manner. Further, the same effect can be obtained by forming the side surface of the magnetoelectric conversion element 174 as a wall surface inclined with respect to the main surface of the semiconductor substrate 106 as in the case of the magnetoelectric conversion element 172.

  The shape of the magnetoelectric conversion element 174 is essentially that the pair of legs are parallel. Therefore, the outline in plan view of the magnetoelectric conversion element 174 does not have to be strictly a “U” character shape, and is a shape having a pair of legs parallel to each other and their connecting portions, It may be a character shape. Moreover, a pair of leg part may be parallel within the range of the precision on a manufacturing process. The “substantially U-shape” is intended to include such a shape. Accordingly, “substantially U-shaped” includes “U-shaped”.

(Embodiment 5)
FIG. 5 is a perspective view showing a configuration of a magnetoelectric conversion element according to Embodiment 5 of the present invention, in which a substrate and a magnetoelectric conversion element formed thereon are drawn. This magnetoelectric conversion element 175 is different from the magnetoelectric conversion element 171 shown in FIG. 1 in that it has four magnetoelectric conversion elements 171 connected so as to form a Wheatstone bridge. The four magnetoelectric transducers 171 are denoted by reference numerals 171A to 171D in order to distinguish each other. Further, the four connection wirings 107 that connect the four magnetoelectric conversion elements 171 to each other are denoted by reference numerals 107A to 107D in order to distinguish each other. Also in FIG. 5, the connection wirings 107A to 107D are schematically drawn in the same manner as the connection wiring 107 in FIG.

  The magnetoelectric conversion elements 171A and 171D are connected in series with each other by the connection wiring 107D so that the same forward current flows. In addition, the magnetoelectric conversion elements 171B and 171C are connected in series by the connection wiring 107B so that the same forward current flows. Furthermore, the series circuit including the magnetoelectric conversion elements 171A and 171D and the series circuit including the magnetoelectric conversion elements 171B and 171C are connected to each other in parallel by the connection wirings 107A and 107C so that the forward currents are divided. That is, if the magnetoelectric conversion element 175 is compared with the Wheatstone bridge shown in FIG. 19, the magnetoelectric conversion elements 171A to 171D correspond to the elements R1 to R4, respectively.

  In the magnetoelectric conversion elements 171A and 171C, the recombination layer 104 is formed on the side surface of the pair of side surfaces of the high resistance region 101 that is located on the right side in a plan view with respect to the forward current traveling direction. On the other hand, in the magnetoelectric conversion elements 171B and 171D, the recombination layer 104 is formed on the side surface of the pair of side surfaces of the high resistance region 101 that is located on the left side in plan view with respect to the forward current traveling direction. In the example of FIG. 5, the four magnetoelectric conversion elements 171 </ b> A to 171 </ b> D are arranged so that the axes connecting the anode region 102 and the cathode region 103 are parallel to each other, but the magnetoelectric conversion element 105 is a Wheatstone bridge. It does not necessarily need to be parallel to function.

  The external magnetic field H is applied in a direction perpendicular to the main surface of the semiconductor substrate 106 and in the direction shown in the figure with a forward bias applied to the magnetoelectric conversion element 175 by supplying a current from the connection wiring 107A to the connection wiring 107C. In the magnetoelectric conversion elements 171B and 171D, the traveling direction of electrons and holes is bent toward the recombination layer 104. As a result, the magnetoresistance elements 171B and 171D have high diode resistance. On the other hand, in the magnetoelectric conversion elements 171A and 171C, the traveling direction of electrons and holes is bent to the opposite side of the recombination layer 104. As a result, in the magnetoelectric conversion elements 171A and 171C, the diode resistance is lowered. Accordingly, a potential difference is generated between the pair of connection wirings 107B and 107D according to the strength of the external magnetic field H. The potential at this time is higher in the connection wiring 107D than in the connection wiring 107B.

  If the direction of the external magnetic field H is opposite to the direction shown in the drawing, the diode resistance is low in the magnetoelectric conversion elements 171B and 171D and the diode resistance is high in the magnetoelectric conversion elements 171A and 171C. As a result, a potential difference is generated between the pair of connection wirings 107B and 107D according to the strength of the external magnetic field H. The potential at this time is higher in the connection wiring 107B than in the connection wiring 107D. That is, by supplying a forward current to the magnetoelectric conversion element 175, a potential difference reflecting the magnitude and direction of the external magnetic field H perpendicular to the main surface of the semiconductor substrate 106 can be extracted from the pair of connection wirings 107B and 107D. .

  Since the magnetoelectric conversion element 175 forms a Wheatstone bridge using the four magnetoelectric conversion elements 171, the sensitivity to the external magnetic field H is high, and the offset due to temperature characteristics and the like is offset to realize high-precision magnetic field detection. To do. The same effect can be obtained even if each of the four magnetoelectric conversion elements 171A to 171D is replaced with one of the magnetoelectric conversion elements 172 to 174. Further, the external magnetic field H can be detected by replacing one to three of the four magnetoelectric conversion elements 171A to 171D with resistance elements.

(Embodiment 6)
FIG. 6 is a perspective view showing a configuration of a magnetoelectric conversion element according to Embodiment 6 of the present invention, in which a substrate and a magnetoelectric conversion element formed thereon are drawn. The magnetoelectric conversion element 176 is formed on a buried insulating film 108 made of silicon dioxide formed on a support substrate 177 made of single crystal silicon. That is, the diode magnetic sensor 176 is formed on the SOI layer 179 which is a single crystal silicon thin film layer of the semiconductor substrate 178 formed as an SOI (Semiconductor On Insulator) substrate. In FIG. 6, the magnetoelectric conversion element 176 has the same structure as the magnetoelectric conversion element 171, but can be configured in the same manner as any of the magnetoelectric conversion elements 172 to 175.

  Since the magnetoelectric conversion element 176 is formed in the SOI layer 179, peripheral circuits such as a drive circuit, an amplifier circuit, or a compensation circuit of the magnetoelectric conversion element 176 can be formed as an integrated circuit in the same SOI layer 179. . Furthermore, by selectively removing the SOI layer 179 around the magnetoelectric conversion element 176, the magnetoelectric conversion element 176 can be easily electrically separated from other circuit portions with high resistance. Thereby, it is possible to suppress the influence of noise due to the flow of current from other circuit portions.

  As the SOI substrate, a substrate obtained by epitaxially growing silicon on a sapphire substrate which is an insulating substrate having a lattice constant matching that of silicon may be used, and the magnetoelectric conversion element 176 may be formed in this epitaxial growth layer. In place of the SOI substrate, a so-called epi substrate obtained by epitaxially growing a single crystal silicon layer on a semiconductor substrate may be used, and the magnetoelectric conversion element 176 may be formed in the epitaxial growth layer. Further, instead of the SOI substrate, a DI substrate in which the elements are dielectrically separated may be used.

(Embodiment 7)
Hereinafter, a magnetic detection device according to an embodiment of the present invention will be described. However, since the magnetic detection device of the present invention is characterized by a structure that converges magnetism on the magnetoelectric conversion element, the type of magnetoelectric conversion element is an element that can be formed on a semiconductor substrate, for example, a diode magnetic sensor, An MR element, Hall element, magneto-impedance element, fluxgate element or the like can be used. Among the diode magnetic sensors, those whose sensitivity axis is set in a direction perpendicular to the main surface of the substrate can use the magnetoelectric conversion elements 171 to 176 which are the diode magnetic sensors according to the first to sixth embodiments, and the sensitivity. For the case where the axis is set in a direction along the main surface of the substrate, the diode magnetic sensor 160 disclosed in Patent Document 2 can be used.

As shown in FIG. 7, the magnetic detection device A <b> 1 according to the seventh embodiment has a p-type conductivity via a buried oxide film 202 on the first main surface (upper surface in FIG. 7B) side of a support substrate 201 made of a silicon substrate. An SOI substrate having an SOI layer 203 is provided, and a magnetoelectric conversion element 205 is formed in an island region separated from the first main surface side of the SOI layer 203 by a separation region 204. The magnetoelectric conversion element 205 includes a p ⁺ type anode region 206, an n ⁺ type cathode region 207, and a p type high resistance region 208. An intermediate oxide film is formed between the anode region 206 and the cathode region 207. An anode electrode 210 and a cathode electrode 211 are formed through 209, and the electrodes 210 and 211 are connected to the anode region 206 and the cathode region 207 through contact hole portions 209a and 209b provided in the intermediate oxide film 209, respectively. Further, a protective film 212 is formed on the first main surface side of each of the electrodes 210 and 211 to protect them. Here, the magnetoelectric conversion element 205 in the present embodiment uses forward double injection of a p-pn diode formed in a single crystal silicon thin film layer on an SOI substrate, and is a double injection carrier. Utilizing the property that certain electrons and holes are bent by the Lorentz force due to the magnetic field, the current decreases when bent toward the recombination region, and the current increases when bent toward the non-recombination side, the direction of the applied magnetic field And a change in current due to the magnitude. The magnetoelectric conversion element 205 is, for example, a magnetoelectric conversion element 171.

  Further, on the second main surface (the lower surface in FIG. 7B) side of the support substrate 201, the support substrate 201 is vertically oriented by an ICP (inductively coupled plasma) type etching apparatus or the like using the opening of the oxide film 213 as a mask. By etching in the (normal direction of the second main surface), the flat bottom portion faces the magnetoelectric conversion element 205, and the peripheral wall portion surrounding the bottom portion becomes substantially parallel to the normal direction of the first and second peripheral surfaces. A bottomed rectangular tube-shaped recess 214 is formed, and a magnetic film (second magnetic body) is formed so as to cover the entire second main surface of the support substrate 201, the bottom of the recess 214, and the surface of the peripheral wall. 215 is formed. Further, on the protective film 212 formed on the first main surface side of the support substrate 201, a magnetic film (first magnetic body) having a size appropriately designed from the chip area and the magnetic flux converging effect of the apparatus. Part) 216 is formed so as to overlap at least the formation region of the magnetoelectric conversion element 205 in the normal direction of the first main surface. The bottom of the recess 214 reaches the buried oxide film 202, and the bottom overlaps the high resistance region 208, which is a magnetic detection region of the magnetoelectric conversion element 205, when viewed from the normal direction of the main surface of the support substrate 201, and magnetically The detection area 208 is formed in a size that includes a projected image on the main surface.

  Here, the first magnetic body portion 216 has a direction in which a portion facing the second magnetic body portion 215 sandwiching the bottoms of the magnetoelectric conversion element 205 and the recess 214 approaches the second magnetic body portion 215 (FIG. 7). It is formed in a shape that protrudes downward (downward in (b)), and the interval between the first and second magnetic body portions 216, 215 is the narrowest in this convex portion 216a.

  Next, changes in magnetic flux when the magnetic detection device A1 of the present embodiment is placed in a constant magnetic field such as geomagnetism will be described.

  FIG. 8 is a schematic diagram showing the state of the magnetic flux M when the magnetic detection device A1 of the present embodiment is placed in a constant magnetic field. The magnetic flux has the property of selectively passing through the path with the smallest magnetic resistance. However, in the magnetic detection device A1 of the present embodiment, the first and second magnetic body portions 216 and 215 have a magnetic permeability higher than that in the air. An extremely large region is formed, and the distance between the first and second magnetic body portions 216 and 215 is the shortest at a portion facing the high resistance region 208 that is a magnetic detection portion of the magnetoelectric conversion element 205. The magnetic resistance of the path passing through the resistance region 208 is the smallest. Moreover, since the recess 214 is formed substantially parallel to the normal direction of the main surface of the support substrate 201, the magnetic flux M passes through the path indicated by the broken line in FIG.

  Therefore, in the magnetic detection device A1 of the present embodiment, the magnetic flux can be most efficiently converged and allowed to pass through the magnetoelectric conversion element 205. Therefore, a large region (in the case of the present embodiment, the first magnetic body portion 216 is generally the same). ) Is concentrated on the high resistance region 208 that is a magnetic detection region, and the peripheral wall portion is inclined with respect to the normal direction of the main surface of the support substrate 201 like the etching groove 219. As compared with the above, the magnetic flux can be converged more efficiently and the sensitivity can be improved. Further, the bottom of the recess 214 overlaps when viewed from the normal direction of the main surface of the support substrate 201 and the high resistance region 208 that is the magnetic detection region of the magnetoelectric conversion element 205, and the main surface of the high resistance region 208 that is the magnetic detection region Since the first and second magnetic parts 216 and 215 are formed so as to minimize the distance between them, the magnetic detection region of the magnetoelectric conversion element 205 The direction of the magnetic flux passing through the high resistance region 208 is substantially the same as the normal direction of the portion facing the bottom of the first and second magnetic body portions 216 and 215. Therefore, most of the magnetic flux passes along the sensitivity axis direction of the magnetoelectric conversion element 205, and the detection with high magnetic detection sensitivity and high accuracy is possible.

  As described above, in the magnetic detection device A1 of the present embodiment, the effect of converging the magnetic flux M passing through the magnetoelectric conversion element 205 is increased by the first and second magnetic body portions 216 and 215, and the second magnetic material is formed at the bottom. The recess 214 in which the body portion 215 is formed is formed so that the peripheral wall portion thereof is substantially parallel to the normal direction of the first and second main surfaces of the support substrate 201. Can be made as small as possible, and the mechanical strength is improved while being smaller than the conventional example. Furthermore, since the opening area of the recess 214 is substantially equal to the area of the bottom where the second magnetic body portion 215 is formed, the area of the support substrate 201 can be designed relatively freely. Further, in the present embodiment, the first magnetic body portion 216 is formed almost flat, so that the structural design and manufacture are easy. The first and second magnetic body portions 216 and 215 are composed of the magnetoelectric conversion element 205. Is formed in a shape that protrudes toward each other so that the distance between the first and second magnetic parts 216 and 215 at the part facing the magnetoelectric transducer 205 is the other part. The magnetic resistance of the magnetic path in the opposite part can be reduced more easily than the magnetic resistance of the magnetic path in the other part. As a result, the opposite part (the high resistance region 208 of the magnetoelectric transducer 205) The magnetic sensitivity can be improved by increasing the magnetic flux density passing through the magnetic field.

  Further, in the present embodiment, since the second magnetic body portion 215 is formed so as to cover the bottom portion and the peripheral wall portion of the recess 214, the cross-sectional area of the magnetic path in the second magnetic body portion 215 increases. Since the magnetic resistance in the second magnetic body portion 215 can be reduced and the difference from the external magnetic resistance can be increased, the magnetic flux leaking from the second magnetic body portion 215 is suppressed, and the magnetoelectric conversion is more effectively performed. Magnetic flux can be converged on the element 205. Further, since the opposing portions of the first and second magnetic parts 216 and 215 facing each other across the magnetoelectric conversion element 205 are formed in a shape that is flat and substantially parallel to each other, the normal portions are formed between the opposing portions. Therefore, the direction of the converged magnetic field coincides with the sensitivity axis of the magnetoelectric conversion element 205, so that the sensitivity can be improved efficiently. In addition, since the area of the part which opposes the magnetoelectric conversion element 205 of the 1st and 2nd magnetic body parts 216 and 215 is designed to have a margin with respect to the high resistance region 208, the SOI layer There is also an advantage that manufacturing accuracy is easy because there is no need to strictly manage the alignment accuracy of processing on the 203rd surface side and the first main surface side of the support substrate 201, and there is an appropriate margin.

(Embodiment 8)
Since the basic structure of the magnetic detection device A2 of this embodiment is the same as that of the seventh embodiment as shown in FIG. 9, the same components are denoted by the same reference numerals and the description thereof is omitted. Only the configuration which is a feature of this embodiment will be described.

  In the present embodiment, the high resistance region 208 in the magnetoelectric conversion element 205 is larger than that in the seventh embodiment, and the first and second magnetic parts 216 and 215 are opposed to each other with the magnetoelectric conversion element 205 interposed therebetween. However, it is characterized in that the area is smaller than the projected area of the high-resistance region 208, which is a magnetic detection part of the magnetoelectric conversion element 205, on the opposite part.

  Thus, in the magnetic detection device A2 of the present embodiment configured as described above, the convergence effect is enhanced by the amount of the area of the opposing portion being reduced, and the magnetic flux passing through the high resistance region 208 is increased (see FIG. 10). ), The sensitivity can be improved efficiently. In addition, since the convergence effect of magnetic flux becomes high, so that the distance between opposing parts is brought closer, it is effective to narrow the distance between opposing parts for the sensitivity improvement.

(Embodiment 9)
Since the basic structure of the magnetic detection device A3 of the present embodiment is the same as that of the seventh embodiment as shown in FIG. 11, the same reference numerals are given to common components, and the description thereof is omitted. Only the configuration that is characteristic of the embodiment will be described.

  The present embodiment is characterized in that a silicon bulk substrate is used as the support substrate 201 and that the first magnetic body portion 216 is formed flat. The support substrate 201 is more than the SOI substrate. There is an advantage that the cost can be reduced by using an inexpensive bulk substrate. Further, since the first magnetic body portion 216 is formed flat, there is an advantage that the structure design and manufacture of the magnetic body portion 216 can be facilitated. However, the manufacturing process of the magnetoelectric conversion element 205 is different from that of the seventh embodiment, and the gap between the parts of the first and second magnetic parts 216 and 215 facing each other with the magnetoelectric conversion element 205 interposed therebetween is manufactured with high accuracy. The effect is almost the same as that of the magnetic detection device A1 of the seventh embodiment, except that the variation in sensitivity is slightly increased due to the difficulty of the detection.

(Embodiment 10)
Since the basic structure of the magnetic detector A4 of this embodiment is the same as that of the seventh embodiment as shown in FIG. 12, the same components are denoted by the same reference numerals, and the description thereof is omitted. Only the configuration that is characteristic of the embodiment will be described.

  In the present embodiment, a silicon single crystal substrate having a main surface orientation of (100) is used as the support substrate 201, and a portion on the opening surface side (second main surface side) of the recess 214 (hereinafter referred to as “second recess”). 214 ′ is characterized in that it is formed by anisotropic etching.

  A method for forming the recess 214 and the second recess 214 ′ in this embodiment will be briefly described. First, on the second main surface (the lower surface in FIG. 12B) side of the support substrate 201, an intermediate portion from the second main surface to the first main surface is formed by anisotropic etching using the opening of the oxide film 213 as a mask. A quadrangular pyramid-shaped second recess 214 ′ is formed up to a depth. After that, the peripheral wall portion surrounding the bottom portion is etched by etching the support substrate 201 in the vertical direction (normal direction of the second main surface) from the bottom surface of the second recess 214 ′ by using an ICP type etching apparatus or the like as in the seventh embodiment. Forms a bottomed square cylindrical recess 214 that is substantially parallel to the normal direction of the first and second main surfaces.

  Thus, the mechanical strength of the support substrate 201 can be maintained and the depth at which the recess 214 is formed as compared with the case where the entire recess (etching groove 69) is formed as in the conventional example. Since the size is smaller than that of the seventh embodiment, it is possible to manufacture with a high throughput by an easier process without impairing the magnetic flux convergence effect and the area efficiency.

(Embodiment 11)
As shown in FIG. 13A, the magnetic detection device A5 of the present embodiment includes a first magnetic detection device B1 that detects magnetism along the normal direction of the main surface of the support substrate 201, and the main detection device 201. Of the second and third magnetic detectors B2 and B3 for detecting magnetism in two directions (left and right direction and vertical direction in FIG. 13A) orthogonal to the normal direction of the surface, and each of the magnetic detection devices B1 to B3 And an electrode pad 217 for taking out the output.

  Since the first magnetic detection device B1 has substantially the same configuration as that of the magnetic detection device A1 of the seventh embodiment, the same components are denoted by the same reference numerals and description thereof is omitted.

  On the other hand, the second and third magnetic detection devices B2 and B3 have the same configuration, and have the same structure as the first magnetic detection device B1 formed on the first main surface side of the support substrate 201. A magnetoelectric conversion element 205 and a pair of magnetic converging portions 218 that are formed on the first main surface side and converge magnetism in a direction parallel to the first main surface with respect to the magnetoelectric conversion element 205 are provided. However, the sensitivity axis of the magnetoelectric conversion element 205 is set to a direction orthogonal to the normal direction of the main surface of the support substrate 201. For example, the magnetoelectric conversion element 205 of the magnetic detection device B1 uses the magnetoelectric conversion element 171 that is the diode magnetic sensor according to the first embodiment, and the magnetoelectric conversion element 205 of the magnetic detection devices B2 and B3 is disclosed in Patent Document 2. A diode magnetic sensor 160 is used. Further, the magnetic converging portion 218 has a shape in plan view that is substantially the same as that of a baseball baseball base, and is formed such that the tapered tip portions face each other with the magnetoelectric conversion element 205 interposed therebetween.

  The present embodiment is configured as described above, and magnetism along the normal direction of the main surface of the support substrate 201 is detected by the first magnetic detection device B1, and is orthogonal to the normal direction of the main surface of the support substrate 201. A small-sized magnetic detection device A5 that can detect magnetism in each axial direction of a three-dimensional orthogonal coordinate system by detecting the magnetism in two directions by the second or third magnetic detection devices B2 and B3, such as an electronic compass It is suitable for. In this embodiment, only one magnetic detection device B1 to B3 is provided for each axial direction. For example, a pair of magnetic detection devices B1 to B3 and a magnetically shielded pair for each axial direction are provided. If a magnetic detection device for each correction is provided and a Wheatstone bridge circuit is constituted by these magnetic detection devices, it is possible to correct the detection value for the environment such as temperature. In addition, when the support substrate 201 is formed of a silicon wafer, circuit elements for control and signal processing can be formed on the same substrate (support substrate 201), and a small magnetic detection device capable of temperature correction and the like is realized. In addition, if the amplifier for amplifying the detection signal is formed on the same substrate, the wiring length is shortened, thereby improving the noise resistance.

Embodiment 12
Next, a magnetic detection device according to embodiment 12 of the present invention will be described.

(Device configuration)
14 and 15 show the configuration of the magnetic detection device according to the present embodiment. FIG. 14 (a) is a plan view of the magnetic detection device, and FIG. 14 (b) is an X-axis of FIG. 14 (a). FIG. 14C is a cross-sectional view of the device along the line Y-Y in FIG. 14A. 15A is a perspective view of the device, FIG. 15B is an enlarged view of a portion A in FIG. 14A, and FIG. 15C is a semiconductor diode magnetic sensor as an example of a magnetoelectric conversion element. It is a schematic block diagram. The magnetic detection device 100 according to the present embodiment includes an SOI (Semiconductor On Insulator) substrate 10 as a semiconductor substrate. The SOI substrate 10 has a top main surface (first main surface) and a lower main surface (second main surface), is a flat plate having a square plan view outline, and is made of single crystal silicon. And a buried oxide film 2 made of silicon dioxide formed thereon and an SOI layer 3 which is a p ⁻ type single crystal silicon thin film layer formed thereon. Magnetoelectric conversion elements 21, 22 and 23 are formed in the SOI layer 3.

A diode magnetic sensor 130 shown in FIG. 15C is used as the magnetoelectric conversion elements 21 to 23. The diode magnetic sensor 130 includes a p ⁺ type anode region 132, an n ⁺ type cathode region 133, and a p ⁻ type high resistance region 131. A recombination layer 134 is formed on one surface of the high resistance region 131, and a non-recombination region 135 is formed on the opposite surface. The diode magnetic sensor 130 utilizes forward double injection of a p-π-n diode. That is, in the diode magnetic sensor 130, electrons and holes, which are double injection carriers, are bent in the traveling direction by the Lorentz force caused by the magnetic field, and the current decreases when the electrons are bent toward the recombination layer 134. The direction or magnitude of the applied magnetic field H is detected through current change by utilizing the property that the current increases when bent toward the recombination region 135. Therefore, the direction of the magnetic field H in FIG. 15C is the direction of the sensitivity axis of the diode magnetic sensor 130.

  The diode magnetic sensor 130 is a diode magnetic sensor according to the first to sixth embodiments that is used as a magnetoelectric conversion element whose sensitivity axis is set in a direction perpendicular to the main surface of the SOI substrate 10 like the magnetoelectric conversion element 21. Any one of the magnetoelectric conversion elements 171 to 176 can be configured. On the other hand, the diode magnetic sensor 130 disclosed in Patent Document 2 is used as a magnetoelectric conversion element whose sensitivity axis is set in a direction along the main surface of the SOI substrate 10 like the magnetoelectric conversion elements 22 and 23. The diode magnetic sensor 160 can be configured.

  In the magnetic detection device 100, the sensitivity axis of the magnetoelectric conversion element 21 (first magnetoelectric conversion element) is set in the normal direction (hereinafter referred to as the Z-axis direction) of the main surface of the SOI substrate 10, and the magnetoelectric conversion element 22 (second magnetoelectric element). The sensitivity axis of the conversion element) is set in one direction perpendicular to the Z-axis direction, that is, one direction along the main surface of the SOI substrate 10 (hereinafter, X-axis direction), and the magnetoelectric conversion element 23 (third magnetoelectric conversion element). Is set in a direction (hereinafter referred to as the Y-axis direction) along the main surface of the SOI substrate 10 and perpendicular to the X-axis. From the viewpoint of symmetry of magnetic detection described later, preferably, the X axis and the Y axis are set in directions along two sides of a square planar view outline of the SOI substrate 10 as shown in FIGS. Also in the following embodiments, the X, Y, and Z axis directions are set similarly.

  A recess 31 is selectively formed on the back surface of the support substrate 1, that is, the lower main surface of the SOI substrate 10. The concave portion 31 has a square opening, and a flat square bottom portion faces the magnetoelectric conversion element 21 and is formed in a tapered shape having four trapezoidal side portions. Such a shape of the recess 31 can be easily formed by performing anisotropic etching on the support substrate 1 made of single crystal silicon using the opening of the oxide film or the like as a mask. The magnetic body portion 40 is formed in a film shape or a plate shape so as to cover the entire back surface of the support substrate 1 and the side surface portion and the bottom surface portion of the recess 31. The bottom surface portion of the recess 31 reaches the buried oxide film 2 and has a dimension so as to include a projected image of the high resistance region 131 that is a magnetic detection region of the magnetoelectric conversion element 21 onto the buried oxide film 2. Is set.

  On the other hand, on the SOI substrate 10 on the surface side of the SOI layer 3, that is, on the upper main surface side, a magnetic body portion 11 (first magnetic body portion), a magnetic body portion 12 (second magnetic body portion), and a magnetic body portion. 13 (third magnetic part) is formed. As a material of the magnetic body portions 11 to 13 and 40, a conventionally known high magnetic permeability material such as permalloy or ferrite can be used. The magnetic body portions 11 to 13 have a substantially flat plate shape having a substantially square planar view outline, and are mainly formed on the SOI layer 3, and the SOI layer 3 is selectively removed around the magnetoelectric transducers 22 and 23. The region where the buried oxide film 2 is exposed is formed on the buried oxide film 2. In the present specification, not only on the main surface but also on the surface including the recess, in the middle, or immediately below it, that is, including the vicinity of the surface, “on the SOI substrate 10 (generally a semiconductor substrate)” Express. In this sense, it can be expressed that the magnetoelectric conversion elements 21 to 23 and the magnetic body portions 11 to 13 and 40 are all formed on the SOI substrate 10.

  The magnetic body parts 11 to 13 are substantially congruent with each other, and are arranged so that diagonal lines of the outline in plan view face the X-axis direction and the Y-axis direction. The dimensions of the magnetic parts 11 to 13 are set to an appropriate size from the viewpoint of the area of the SOI substrate 10 (so-called chip area) and the magnetic flux focusing effect. Among these, the magnetic body portion 11 covers the magnetoelectric conversion element 21 and is disposed so that the central portion thereof is located immediately above the magnetoelectric conversion element 21. The magnetic body portion 11 and the magnetic body portion 12 are arranged side by side in the X-axis direction so that the diagonal lines in the X-axis direction coincide with each other, and the magnetic body portion 11 and the magnetic body portion 13 are diagonal lines in the Y-axis direction. Are arranged side by side in the Y-axis direction so as to match.

  Of the magnetic body portion 11 and the magnetic body portion 40, a portion 41 (fifth magnetic body portion) covering the recess 31 sandwiches the magnetoelectric conversion element 21, and a pair of magnetic bodies that focus the magnetic flux on the magnetoelectric conversion element 21. Forming part. More specifically, the central portion of the magnetic body portion 11 and the portion of the magnetic body portion 40 that covers the bottom surface portion of the concave portion 31 are orthogonal to the Z-axis direction, which is the direction of the sensitivity axis of the magnetoelectric conversion element 21. A pair of opposing surfaces (first opposing surface pair) opposing each other with the conversion element 21 interposed therebetween is formed. Since the magnetic body portion 40 is formed so as to cover the recess 31, the pair of the magnetic body portion 11 and the magnetic body portion 40 are closest to each other on this facing surface.

  Further, the magnetic body portion 11 and the magnetic body portion 12 sandwich the magnetoelectric conversion element 22 and fulfill the function of focusing the magnetic flux on the magnetoelectric conversion element 22. More specifically, the magnetic body portion 11 and the magnetic body portion 12 are perpendicular to the X-axis direction, which is the direction of the sensitivity axis of the magnetoelectric conversion element 22, at the corners in the X-axis direction. It has a pair of opposing surfaces (second opposing surface pair) that face each other. The magnetic body portion 11 and the magnetic body portion 12 are closest to each other on this facing surface.

  Similarly, the magnetic body portion 11 and the magnetic body portion 13 sandwich the magnetoelectric conversion element 23 and fulfill the function of focusing the magnetic flux on the magnetoelectric conversion element 23. More specifically, the magnetic part 11 and the magnetic part 13 are perpendicular to the Y-axis direction, which is the direction of the sensitivity axis of the magnetoelectric conversion element 23, at the corners in the Y-axis direction. It has a pair of opposing surfaces (third opposing surface pair) that face each other. The magnetic body portion 11 and the magnetic body portion 13 are closest to each other on this facing surface.

  Further, in a certain region adjacent to the facing surface facing the magnetoelectric conversion element 22 in the magnetic body portion 11 and in a half region located on the magnetic body portion 12 side with respect to the Y-axis diagonal line, the magnetoelectric conversion element 22 is provided. The width of the contour in plan view perpendicular to the sensitivity axis direction (X-axis direction) of the magnetoelectric conversion element 22 decreases monotonously as it approaches the distance. Similarly, in a certain region adjacent to the facing surface facing the magnetoelectric conversion element 22 in the magnetic body portion 12 and in a half region located on the magnetic body portion 11 side with respect to the Y-axis diagonal line, the magnetoelectric conversion element The width of the contour in plan view perpendicular to the sensitivity axis direction (X-axis direction) of the magnetoelectric conversion element 22 decreases monotonically as the distance from 22 increases.

  Further, in a certain region adjacent to the facing surface facing the magnetoelectric conversion element 23 in the magnetic body portion 11 and half of the region located on the magnetic body portion 13 side with respect to the diagonal line in the X-axis direction, the magnetoelectric conversion element 23. The width of the contour in plan view perpendicular to the sensitivity axis direction (Y-axis direction) of the magnetoelectric conversion element 23 monotonously decreases as the distance from the head increases. Similarly, in a certain region adjacent to the opposing surface facing the magnetoelectric conversion element 23 in the magnetic body portion 13 and in a half region located on the magnetic body portion 11 side with respect to the diagonal line in the X-axis direction, the magnetoelectric conversion element The width of the contour in plan view perpendicular to the sensitivity axis direction (Y-axis direction) of the magnetoelectric conversion element 23 decreases monotonically as the distance from 23 increases.

  Furthermore, the magnetic part 11 has a step 51 in the vicinity of the part facing the magnetoelectric conversion element 22 and in the vicinity of the part facing the magnetoelectric conversion element 23. Similarly, the magnetic body portion 12 has a step 52 in the vicinity of a portion facing the magnetoelectric conversion element 22, and the magnetic body portion 13 has a step 53 in the vicinity of a portion facing the magnetoelectric conversion element 23. . As described above, the steps 51 to 53 are formed by forming the magnetic parts 11 to 13 over the region where the SOI layer 3 is selectively removed by etching or the like and over the SOI layer 3. It is formed so that the height is shifted in the axial direction.

(Operation and advantages of the device)
Next, the operation of the magnetic detection device 100 will be described. The magnetic detection device 100 includes magnetoelectric conversion elements 21 to 23 whose sensitivity axes are set in the X, Y, and Z axis directions, and magnetic body portions 11 to 13 and 40 that focus a magnetic flux on these magnetoelectric conversion elements 21 to 23. Therefore, it functions as a three-axis magnetic detection device capable of magnetic detection in orthogonal three-axis directions against a weak external magnetic field such as geomagnetism.

  FIG. 15B shows the magnetic flux density B when the magnetic detection device 100 is placed so that the geomagnetic field is along the Y-axis direction. The magnetic flux has a property of selectively passing through a path having the lowest magnetic resistance. In the magnetic detection device 100, the magnetic body portions 11 and 13 form a region having a much higher magnetic permeability than in the air, and the distance between them becomes the shortest on a pair of opposing surfaces facing each other with the magnetoelectric conversion element 23 interposed therebetween. Therefore, the magnetic resistance is lowest in the path passing through the magnetoelectric conversion element 23. For this reason, the magnetic flux B is focused on the magnetoelectric transducer 23 as shown in FIG. In addition, the magnetic body portions 11 and 13 monotonically narrow in the region adjacent to the facing surface as the width of the contour in plan view in the direction perpendicular to the Y axis becomes closer to the magnetoelectric transducer 23. Are more effectively focused on the magnetoelectric transducer 23.

  Therefore, the magnetoelectric conversion element 23 is formed on the SOI layer 3 and the cross-sectional area of the cross section perpendicular to the Y axis at the X axis direction diagonal line portions of the magnetic body portions 11 and 13, that is, the X axis direction diagonal line length. Magnetic flux passing through an area corresponding to the product of the thicknesses of the magnetic body portions 11 and 13 is focused. Further, since the magnetic body portions 11 and 13 are formed with steps 51 and 53, the magnetoelectric transducer 23 has the steps 51 and 53 in the X-axis direction of the magnetic body portions 11 and 13 and the steps 51 and 53. Magnetic flux passing through a cross-sectional area corresponding to the product of the size of 53 (that is, the difference in height of the magnetic body portions 11 and 13 before and after the steps 51 and 53) is further added and focused on the magnetoelectric transducer 23. To do. For this reason, the magnetic detection sensitivity in the Y-axis direction by the magnetoelectric transducer 23 is effectively enhanced.

  Also for the magnetoelectric conversion element 22 sandwiched between the magnetic body portions 11 and 12, the magnetic detection sensitivity in the X-axis direction is effectively enhanced by the same mechanism as described above. About the magnetoelectric conversion element 21 sandwiched between the magnetic body portions 11 and 40, high magnetic detection sensitivity in the Z-axis direction can be obtained by the same mechanism as that described for the magnetic detection device 150 according to the prior art. Further, unlike the magnetic film 127 of the magnetic detection device 150, the width along the XY plane of the magnetic body portion 11 is set wider than that of the magnetoelectric conversion element 21. The magnetic flux is further strengthened.

  As described above, the magnetic detection device 100 can detect the external magnetic fields in the orthogonal X, Y, and Z axis directions with high sensitivity. Further, the magnetic detection device 100 realizes a structure for converging the magnetic flux to the magnetoelectric conversion elements 21 to 23 using both the upper main surface and the lower main surface of the single SOI substrate 10, and the magnetic body portion 11 The three-axis direction magnetic fluxes are configured to simultaneously perform the function of converging the magnetic fluxes to the magnetoelectric conversion elements 21 to 23, respectively. For this reason, the magnetic detection apparatus 100 can increase the utilization efficiency of the substrate area (so-called chip area), thereby realizing magnetic detection in the orthogonal three-axis directions with a small apparatus size. In addition, since the magnetic detection device 100 enables magnetic detection in the orthogonal three-axis directions using the single SOI substrate 10, the alignment is not required for use in an electronic compass or the like. Also in this respect, the magnetic detection device 100 enables highly accurate magnetic detection.

  Further, as shown in FIG. 14A, in the magnetic detection device 100, the planar view outline of the SOI substrate 10 is a square, and the magnetoelectric conversion elements 21 to 23 and the magnetic body portions 11 to 13 and 40 are included in the SOI substrate. Their shapes and positions are set so as to be line symmetric with respect to one diagonal line L of the ten plan view outlines. For this reason, when an external magnetic field rotates in the XY plane, the symmetry of the change of the magnetic flux input into the magnetoelectric conversion elements 22 and 23 improves. That is, a magnetic detection output with a small distortion can be obtained with respect to the rotation of the external magnetic field in the XY plane.

  In addition, because of the symmetry with respect to the diagonal L, the magnetic body portions 11 to 13 can be efficiently arranged on a substrate having a limited area, and the substrate area can be used effectively. That is, the magnetic detection device 100 can be more easily downsized. Furthermore, the above symmetry is also advantageous in forming the recess 31 by anisotropically etching the support substrate 1 using the crystal orientation of single crystal silicon.

  In addition, since the magnetic detection device 100 uses the SOI substrate 10 as a semiconductor substrate, the distance between the pair of opposing surfaces of the magnetic body portions 11 and 40 that sandwich the magnetoelectric conversion element 21 having the sensitivity axis in the Z-axis direction is as follows. The thickness of the buried oxide film 2, the SOI layer 3, and a protective film (not shown) formed thereon is determined with high accuracy. In the case where a bulk silicon substrate is used as the semiconductor substrate, in order to set the distance between the pair of facing surfaces with high accuracy in the process of forming the recess 31 by etching the silicon substrate, high-precision etching is used. Requires control. On the other hand, when the SOI substrate 10 is used as the semiconductor substrate, the buried oxide film 2 can be used as an etching stopper, thereby reducing the distance between the facing surfaces without requiring high etching accuracy. It becomes possible to set with high accuracy. It is known from simulation results that the effect of converging the magnetic flux changes sensitively depending on the distance between the opposing surfaces. According to the magnetic detection device 100, since the distance between the facing surfaces can be controlled with high accuracy, a device with small variations in magnetic detection sensitivity in the Z-axis direction can be easily obtained.

  Furthermore, since the magnetic detection device 100 includes the SOI substrate 10 and the magnetoelectric conversion elements 21 to 23 are formed in the SOI layer 3, the SOI layer 3 is selectively removed around the magnetoelectric conversion elements 21 to 23. The magnetoelectric conversion elements 21 to 23 can be easily electrically separated from other circuit portions with high resistance. Thereby, it is possible to suppress the influence of noise due to the flow of current from other circuit portions.

  Further, the magnetic body portions 11 to 13 are formed in a substantially flat plate shape on the upper main surface side of the SOI substrate 10, and accordingly, the magnetoelectric conversion elements 21 to 23 are all formed on the upper main surface side of the SOI substrate 10. Yes. Therefore, the wiring connected to the magnetoelectric conversion elements 21 to 23 can be easily formed on the SOI substrate 10, more specifically, the SOI layer 3.

  Further, in the magnetic detection device 100, since the recess 31 is single, the ratio of the opening of the recess 31 to the substrate area is low. For this reason, the magnetic detection device 100 has an advantage that the mechanical strength of the SOI substrate 10 is high.

  In addition, the magnetic detection device 100 has a relatively wide area on the upper main surface of the SOI substrate 10 that is not covered with the magnetic body portions 11 to 13. For this reason, the magnetic detection device 100 can integrate a highly useful magnetic detection device, geomagnetic sensor, or the like by integrating the control of the magnetoelectric conversion elements 21 to 23, a drive circuit, etc. (for example, a bridge circuit or an amplifier described later). It can be easily realized with one substrate (so-called one-chip).

(Embodiment 13)
16 and 17 show the configuration of the magnetic detection device according to the thirteenth embodiment of the present invention. FIG. 16 is a plan view of the same device, and FIG. 17 is a perspective view of the same device. In addition, the same code | symbol is attached | subjected to the same part and corresponding part through FIGS. 14-35. The magnetic detection device 200 according to the present embodiment includes a magnetic body portion 14 (fourth magnetic body portion) in addition to the magnetic body portions 11 to 13 on the SOI substrate 10 on the upper main surface side. This is different from the magnetic detection device 100 according to the first embodiment shown in FIGS. The magnetic body portions 11 to 14 are symmetric about 1/4 rotation around a central axis (symmetry axis) N passing through the center of the upper main surface (the same applies to the lower main surface) of the SOI substrate 10 and facing the Z-axis direction. Their shapes and positions are determined so as to be axially symmetric with respect to rotation in degrees. Therefore, the magnetic body portion 14 is disposed so as to be adjacent to both the magnetic body portions 12 and 13 and has the same shape as the magnetic body portions 11 to 13.

  Since the magnetic detection device 200 is configured as described above, when the external magnetic field rotates in the XY plane, the symmetry of changes in the magnetic flux input to the magnetoelectric conversion elements 22 and 23 is further improved. That is, it is possible to obtain a magnetic detection output with a smaller distortion with respect to the rotation of the external magnetic field in the XY plane.

(Embodiment 14)
18 shows the configuration of a magnetic detection device according to Embodiment 14 of the present invention. FIG. 18 (a) is a plan view of the same device, and FIG. 18 (b) is an XX section line of FIG. 18 (a). FIG. 18C is a cross-sectional view of the device along the line YY in FIG. 18A. The magnetic detection device 300 according to the present embodiment includes a magnetoelectric conversion element 24 (fourth magnetoelectric conversion element) and a magnetoelectric conversion element 25 (fifth magnetoelectric conversion element) in addition to the magnetoelectric conversion elements 21 to 23 in the SOI layer 3. Is different from the magnetic detection device 200 according to the thirteenth embodiment shown in FIGS. The magnetoelectric conversion elements 24 and 25 are formed as a diode magnetic sensor 130 similarly to the magnetoelectric conversion elements 21 to 23, and the sensitivity axis of the magnetoelectric conversion element 24 is in the same direction as the sensitivity axis of the magnetoelectric conversion element 23, that is, the Y axis. The sensitivity axis of the magnetoelectric conversion element 25 is set in the same direction as the sensitivity axis of the magnetoelectric conversion element 22, that is, the X-axis direction.

  In the magnetic detection device 300, in addition to the magnetic body portions 11 to 14, the shapes and positions of the magnetoelectric conversion elements 22 to 25 are determined so as to be ¼ rotation symmetric around the central axis N. . Therefore, the shapes and positions of the magnetoelectric conversion elements 24 and 25 and the magnetic body portions 12 to 14 sandwiching them are determined as follows.

  The magnetic body portion 12 and the magnetic body portion 14 sandwich the magnetoelectric conversion element 24 and fulfill the function of focusing the magnetic flux on the magnetoelectric conversion element 24. More specifically, the magnetic body portion 12 and the magnetic body portion 14 are perpendicular to the Y-axis direction, which is the direction of the sensitivity axis of the magnetoelectric conversion element 24, at the corners in the Y-axis direction. It has a pair of opposing surfaces (fourth opposing surface pair) that face each other. The magnetic body portion 12 and the magnetic body portion 14 are closest to each other on this facing surface.

  Similarly, the magnetic body portion 13 and the magnetic body portion 14 sandwich the magnetoelectric conversion element 25 and fulfill the function of focusing the magnetic flux on the magnetoelectric conversion element 25. More specifically, the magnetic body portion 13 and the magnetic body portion 14 are orthogonal to the X-axis direction, which is the direction of the sensitivity axis of the magnetoelectric conversion element 25, at the corners in the X-axis direction. It has a pair of opposing surfaces (fifth opposing surface pair) that face each other. The magnetic body portion 13 and the magnetic body portion 14 are closest to each other on this facing surface.

  Further, in a certain region adjacent to the facing surface facing the magnetoelectric conversion element 24 in the magnetic body portion 12 and half the region located on the magnetic body portion 14 side with respect to the X-axis direction diagonal line, the magnetoelectric conversion element 24. The width of the contour in plan view perpendicular to the sensitivity axis direction (Y-axis direction) of the magnetoelectric conversion element 24 monotonously decreases as it approaches the distance. Similarly, in a certain region adjacent to the opposing surface facing the magnetoelectric conversion element 24 in the magnetic body portion 14 and half the region located on the magnetic body portion 12 side with respect to the X-axis direction diagonal line, the magnetoelectric conversion element The width of the contour in plan view perpendicular to the sensitivity axis direction (Y-axis direction) of the magnetoelectric conversion element 24 decreases monotonically as the distance to 24 increases.

  Further, in a certain region adjacent to the opposing surface facing the magnetoelectric conversion element 25 in the magnetic body portion 13 and in a half region located on the magnetic body portion 14 side with respect to the Y-axis direction diagonal line, the magnetoelectric conversion element 25. The width of the contour in plan view perpendicular to the sensitivity axis direction (X-axis direction) of the magnetoelectric conversion element 25 decreases monotonously as it approaches the distance. Similarly, in a certain region adjacent to the facing surface facing the magnetoelectric conversion element 25 in the magnetic body portion 14 and in a half region located on the magnetic body portion 13 side with respect to the Y-axis direction diagonal line, the magnetoelectric conversion element The width of the contour in plan view perpendicular to the sensitivity axis direction (X-axis direction) of the magnetoelectric conversion element 25 decreases monotonically as the distance from the line 25 increases.

  Further, the magnetic body portion 14 has a step 54 in the vicinity of the portion facing the magnetoelectric conversion element 24 and in the vicinity of the portion facing the magnetoelectric conversion element 25. Similarly, the magnetic body portion 12 has a step 52 in the vicinity of the portion facing the magnetoelectric conversion element 24, and the magnetic body portion 13 has the step 53 in the vicinity of the portion facing the magnetoelectric conversion element 25. . These steps 52 to 54 are formed in the Z-axis direction by forming the magnetic parts 12 to 14 over the region where the SOI layer 3 is selectively removed by etching or the like and over the SOI layer 3. It is formed so that the height is shifted.

  Since the magnetic detection device 300 is configured as described above, the magnetoelectric conversion element 22 and the magnetoelectric conversion element 25 output the same magnetic detection signal when placed in an external magnetic field, and the magnetoelectric conversion element 23. And the magnetoelectric transducer 24 output the same magnetic detection signal. Therefore, a magnetic detection output having double the strength in the X-axis direction and the Y-axis direction can be obtained with the same substrate area as the magnetic detection devices 100 and 200, and the magnetic detection sensitivity is doubled. Furthermore, using the well-known Wheatstone bridge shown in FIG. 19, the opposite sides, for example, the element R1 and the element R3, the magnetoelectric conversion element 22 and the magnetoelectric conversion element 25 (or the magnetoelectric conversion element 23 and the magnetoelectric conversion element 24, and ), The magnetic detection sensitivity can be increased while removing the fluctuation of the magnetic detection output accompanying the temperature change, that is, common mode noise.

  As other opposing sides of the Wheatstone bridge, for example, the elements R2 and R4, other magnetoelectric conversion elements 61 and 62 formed in the SOI layer 3 may be used as illustrated in FIG. In this case, the magnetoelectric conversion elements 61 and 62 are disposed at a site away from the region where the magnetic body portions 11 to 14 focus the magnetic flux so as to suppress the influence of the external magnetic field. The magnetoelectric conversion elements 61 and 62 are disposed outside the magnetoelectric conversion elements 23 and 24 in the example of FIG. 20A, and are disposed inside the magnetoelectric conversion elements 23 and 24 in the example of FIG. Has been. The magnetoelectric transducers 61 and 62 are desirably arranged in a portion that is symmetric about 1/2 rotation around the central axis N so that the influence of the external magnetic field is the same even though it is weak.

(Embodiment 15)
21 and 22 show the configuration of the magnetic detection device according to the fifteenth embodiment of the present invention. FIG. 21 (a) is a plan view of the same, and FIG. 21 (b) is an X-axis of FIG. 21 (a). FIG. 22 is a perspective view of the apparatus along the X-section line. A cross-sectional view taken along the line YY in FIG. 21A is the same as FIG. 14C. In the magnetic detection device 400 according to the present embodiment, a magnetoelectric conversion element 26 (sixth magnetoelectric conversion element) is formed in the SOI layer 3 in addition to the magnetoelectric conversion elements 21 to 25, and the back surface of the support substrate 1, that is, the SOI substrate 10. Is different from the magnetic detection device 300 in that a recess 34 is selectively formed in addition to the recess 31 on the lower main surface. The magnetic part 40 is formed so as to cover not only the recess 31 but also the recess 34, and the part 44 covering the recess 34 corresponds to the sixth magnetic part of the present invention.

  The magnetoelectric conversion element 26 is formed as a diode magnetic sensor 130 in the same manner as the magnetoelectric conversion elements 21 to 25. The sensitivity axis of the magnetoelectric conversion element 26 is set in the same direction as the sensitivity axis of the magnetoelectric conversion element 21, that is, the Z-axis direction. The magnetic body part 14, the magnetoelectric conversion element 26, the concave part 34, and the magnetic part 40 part 44 have the same relationship as the magnetic part 11, the magnetoelectric conversion element 21, the concave part 31 and the magnetic part 40 part 41. The shape and position are determined as follows. Therefore, the central portion of the magnetic body portion 14 and the portion of the magnetic body portion 40 that covers the bottom surface portion of the recess 31 form a pair of opposing surfaces (sixth opposing surface pair) that are opposed to each other with the magnetoelectric conversion element 26 interposed therebetween. ing. Further, the magnetoelectric conversion elements 21 to 26, the magnetic body parts 11 to 14 and 40, and the recesses 31 and 34 are ½ rotation symmetrical with respect to the central axis N.

  Since the magnetic detection device 400 is configured as described above, the magnetoelectric conversion element 21 and the magnetoelectric conversion element 26 output the same magnetic detection signal when placed in an external magnetic field. Therefore, a magnetic detection output twice as strong as the external magnetic field in the Z-axis direction can be obtained with the same substrate area as the magnetic detection devices 100 to 300, and the magnetic detection sensitivity is doubled. Further, by using the Wheatstone bridge shown in FIG. 19 and arranging the magnetoelectric conversion element 21 and the magnetoelectric conversion element 26 on the opposite sides thereof, for example, the element R1 and the element R3, magnetic detection accompanying a temperature change or the like. Magnetic detection sensitivity can be increased while removing fluctuations in output, that is, common mode noise.

(Embodiment 16)
23 and 24 show the configuration of the magnetic detection device according to the sixteenth embodiment of the present invention. FIG. 23 (a) is a plan view of the same, and FIG. 23 (b) is an X-axis of FIG. 23 (a). FIG. 23C is a cross-sectional view of the apparatus along the line Y-Y in FIG. 23A, and FIG. 24 is a perspective view of the apparatus along the X-cut line. In the magnetic detection device 500 according to the present embodiment, a magnetoelectric conversion element 27 (seventh magnetoelectric conversion element) and a magnetoelectric conversion element 28 (eighth magnetoelectric conversion element) are formed in the SOI layer 3 in addition to the magnetoelectric conversion elements 21 to 26. In addition to the recesses 31 and 34, the recesses 32 and 33 are selectively formed on the back surface of the support substrate 1, that is, the lower main surface of the SOI substrate 10, which is different from the magnetic detection device 400. The magnetic body portion 40 is formed so as to cover not only the recess portions 31 and 34 but also the recess portions 32 and 33, and a portion 42 covering the recess portion 32 corresponds to the seventh magnetic body portion of the present invention. The covering portion 43 corresponds to the eighth magnetic body portion of the present invention.

  The magnetoelectric conversion elements 27 and 28 are formed as a diode magnetic sensor 130 similarly to the magnetoelectric conversion elements 21 to 26. The sensitivity axes of the magnetoelectric conversion elements 27 and 28 are set in the same direction as the sensitivity axes of the magnetoelectric conversion elements 21 and 26, that is, the Z-axis direction. The magnetic body portion 12, the magnetoelectric conversion element 27, the concave portion 32, and the portion 42 of the magnetic body portion 40 have the same relationship with the magnetic body portion 11, the magnetoelectric conversion element 21, the concave portion 31, and the portion 41 of the magnetic body portion 40. The shape and position are determined as follows. Similarly, the magnetic body portion 13, the magnetoelectric conversion element 28, the concave portion 33, and the portion 43 of the magnetic body portion 40 are the same as the magnetic body portion 11, the magnetoelectric conversion element 21, the concave portion 31, and the portion 41 of the magnetic body portion 40. The shape and position are determined so as to be related. Therefore, the central portion of the magnetic body portion 12 and the portion of the magnetic body portion 40 that covers the bottom surface portion of the recess 32 form a pair of opposing surfaces (seventh opposing surface pair) that face each other with the magnetoelectric conversion element 27 interposed therebetween. The central portion of the magnetic body portion 13 and the portion of the magnetic body portion 40 that covers the bottom surface portion of the recess 33 form a pair of opposing surfaces (eight opposing surface pairs) that face each other with the magnetoelectric conversion element 28 interposed therebetween. Yes. Further, the magnetoelectric conversion elements 21 to 28, the magnetic body parts 11 to 14 and 40, and the recesses 31 to 34 are ¼ rotationally symmetric with respect to the central axis N.

  Since the magnetic detection device 500 is configured as described above, the magnetoelectric transducers 21 and 26 to 28 output the same magnetic detection signal when placed in an external magnetic field. Therefore, a magnetic detection output four times stronger than the external magnetic field in the Z-axis direction can be obtained with the same substrate area as the magnetic detection devices 100 to 300, and the magnetic detection sensitivity is increased. Further, using the Wheatstone bridge shown in FIG. 19, the magnetoelectric conversion element 21 and the magnetoelectric conversion element 26 are arranged on the opposite sides, for example, the elements R1 and R3, and the other opposite sides, for example, the element R2 and the like. A magnetoelectric conversion element 27 and a magnetoelectric conversion element 28 are arranged in the element R4, and magnetic detection is performed in the opposite direction with respect to the same external magnetic field between the magnetoelectric conversion elements 21 and 26 and the magnetoelectric conversion elements 27 and 28. By connecting so that the output changes, that is, to obtain a magnetic detection output with an opposite phase, the magnetic detection sensitivity is further improved while removing the fluctuation of the magnetic detection output accompanying the temperature change or the like, that is, common mode noise. Can be increased.

  Further, not only the magnetoelectric conversion elements 22 to 25 and the magnetic body portions 11 to 14 but also the concave portions 31 to 34 and the portions 41 to 44 of the magnetic body portion 40 are symmetric about 1/4 rotation around the central axis N. Since each member is arranged as described above, when the external magnetic field rotates in the XY plane, the symmetry of the change in magnetic flux input to the magnetoelectric transducers 22 to 25 is further improved. That is, it is possible to obtain a magnetic detection output with a smaller distortion with respect to the rotation of the external magnetic field in the XY plane.

  Further, the recesses 31 to 34 are formed so that the two sides of the square outline of each opening are parallel to the X-axis direction and the Y-axis direction, that is, the two sides of the planar view outline of the SOI substrate 10. The recesses 31 to 34 can be efficiently arranged in a limited substrate area. That is, it is possible to set the substrate area to a minimum to form the concave portions 31 to 34 having the same size, and a small and highly sensitive magnetic detection device can be obtained.

(Embodiment 17)
25 and 26 show the configuration of the magnetic detection device according to the seventeenth embodiment of the present invention. FIG. 25 (a) is a plan view of the same device, and FIG. 25 (b) is an X-axis of FIG. 25 (a). FIG. 25C is a cross-sectional view of the apparatus along the line Y-Y in FIG. 25A, and FIG. 26A is a perspective view of the apparatus. FIG. 26B is an enlarged view of a portion C in FIG. In the magnetic detection device 600 according to the present embodiment, four corners of each of the magnetic body portions 11 to 14 in the plan view outline are separated into two forks, and each corner has two pointed heads. It differs from the magnetic detection apparatus 500 in that each of the magnetoelectric conversion elements 22 to 25 has two magnetoelectric conversion elements having the sensitivity axis in the same direction.

  As shown in FIG. 26B, each of the magnetic parts 11 and 13 sandwiching the magnetoelectric conversion element 23 is perpendicular to the sensitivity axes (Y-axis direction) of the magnetoelectric conversion elements 23a and 23b at the leading ends of the two heads. Have opposite surfaces. These facing surfaces individually face the magnetoelectric conversion elements 23a and 23b. That is, the opposing surface pair (third opposing surface pair) of the magnetic body portions 11 and 13 is divided into two opposing surface pairs individually facing the magnetoelectric conversion elements 23a and 23b. The shapes and arrangements of the other magnetoelectric conversion elements 22, 24 and 25 and the magnetic body portions sandwiching them are the same.

  Since the magnetic detection device 600 is configured as described above, the magnetoelectric conversion element 22a and the magnetoelectric conversion element 25a are connected to the opposite sides, for example, the element R1 and the element R3, using the Wheatstone bridge shown in FIG. The magnetoelectric conversion element 22b and the magnetoelectric conversion element 25b are arranged on other opposing sides, for example, the element R2 and the element R4, and between the magnetoelectric conversion elements 22a and 25a and the magnetoelectric conversion elements 22b and 25b, By connecting so that the magnetism detection output changes in the opposite direction with respect to the same external magnetic field, that is, to obtain the magnetism detection output in the opposite phase, the fluctuation of the magnetism detection output due to temperature change, that is, common It is possible to further increase the magnetic detection sensitivity in the X-axis direction while removing mode noise. Similarly, for example, the magnetoelectric conversion element 23a and the magnetoelectric conversion element 24a are arranged in the element R1 and the element R3, and the magnetoelectric conversion element 23b and the magnetoelectric conversion element 24b are arranged in the element R2 and the element R4, for example. By connecting the conversion elements 23a and 24a and the magnetoelectric conversion elements 23b and 24b so as to obtain a magnetic detection output having an opposite phase, the magnetic detection sensitivity in the Y-axis direction can be increased while removing common mode noise. It can be further increased.

(Embodiment 18)
FIG. 27 shows a configuration of a magnetic detection device according to Embodiment 18 of the present invention. FIG. 27 (a) is a perspective view of the same device, FIG. 27 (b) is a longitudinal sectional view of the same device, and FIG. ) Is a rear view of the apparatus. A plan view of the device is the same as FIG. 25A, and FIG. 27B corresponds to a cross-sectional view of the device according to the present embodiment along the line XX in FIG. . The magnetic detection device 700 according to the present embodiment is different from the magnetic detection device 600 in that the magnetic body portion 40 that covers the back surface of the support substrate 1 is separated into portions 41 to 44 that individually cover the recesses 31 to 34. ing.

  In the magnetic detection device 700, since the portions 41 to 44 of the magnetic body portion 40 are separated from each other, for example, the magnetic resistance in the path from the magnetic body portion 11 through the magnetic body portions 41 and 42 to the magnetic body portion 12 is reduced. Get higher. For this reason, since the ratio divided | segmented into the said path | route becomes low among the magnetic fluxes which pass the magnetic body parts 11 and 12, the magnetic flux focused on the magnetoelectric conversion elements 22a and 22b increases. That is, the effect that the magnetic body portions 11 and 12 focus the magnetic flux on the magnetoelectric conversion elements 22a and 22b is further enhanced, and the magnetic detection sensitivity by the magnetoelectric conversion elements 22a and 22b is improved. The same applies to the other magnetoelectric conversion elements 23a, 23b, 24a, 24b, 25a and 25b.

  Preferably, the interval between the magnetic body portions 41 to 44 is set wider than the interval between the magnetic body portions 11 to 14. Thereby, the magnetic resistance of the path passing through the magnetic parts 41 to 44 is higher than the magnetic resistance of the path passing through the magnetoelectric conversion elements 22a to 25a and 22b to 25b, so that the magnetic detection sensitivity is further enhanced.

(Embodiment 19)
28 and 29 show the configuration of the magnetic detection device according to the nineteenth embodiment of the present invention. FIG. 28 (a) is a plan view of the same, and FIG. 28 (b) is a cross-sectional view of FIG. FIG. 28C is a cross-sectional view of the apparatus along the line Y-Y of FIG. 28A, FIG. 29A is a perspective view of the apparatus, FIG. 29B is an enlarged view of a portion D in FIG. In the magnetic detection device 800 according to the present embodiment, the two sides of the substantially square planar outline of each of the magnetic body portions 11 to 14 are parallel to the two sides of the square planar outline of the SOI substrate 10, that is, It arrange | positions so that X-axis direction and Y-axis direction may be followed, and in the planar view outline of each of the magnetic body parts 11-14, on the edge | side which opposes the magnetoelectric conversion elements 22a-25a and 22b-25b, the magnetoelectric conversion element 22a It differs from the magnetic detection apparatus 600 in that it has convex portions protruding toward ˜25a and 22b˜25b.

  As shown in FIG. 29 (b), each of the magnetic body portions 11 and 13 has opposing surfaces perpendicular to the sensitivity axes (Y-axis direction) of the magnetoelectric transducers 23a and 23b at the tips of the two convex portions. ing. These facing surfaces individually face the magnetoelectric conversion elements 23a and 23b. As a result, in a certain region adjacent to the facing surface in the magnetic body portion 11, the plan view that is orthogonal to the sensitivity axis direction (Y-axis direction) of the magnetoelectric conversion elements 23a and 23b as it approaches the magnetoelectric conversion elements 23a and 23b. The width of the contour decreases gradually. Similarly, in a certain region adjacent to the facing surface of the magnetic part 13, a plan view that is orthogonal to the sensitivity axis direction (Y-axis direction) of the magnetoelectric conversion elements 23 a and 23 b as it approaches the magnetoelectric conversion elements 23 a and 23 b. The width of the contour decreases gradually. The shapes and arrangements of the other magnetoelectric conversion elements 22a, 22b, 24a, 24b, 25a and 25b and the magnetic body portions sandwiching them are also the same.

  In the magnetic detection device 800, since the magnetic body portions 11 to 14 have the above-described outline in plan view, the interval between the pair of magnetic body portions sandwiching each magnetoelectric conversion element is the narrowest in the facing surface pair. At the same time, the interval between the portions excluding the opposed surface pair becomes discontinuously (that is, leap) larger than the interval between the opposed surface pairs. For this reason, the effect of converging the magnetic flux to the opposing magnetoelectric conversion element is further enhanced, thereby further improving the magnetic detection sensitivity.

  Further, the magnetic body parts 11 to 14 are arranged so that two sides of the substantially square planar view outline of each of the magnetic body parts 11 to 14 are parallel to two sides of the square planar view outline of the SOI substrate 10. Therefore, the magnetic parts 11 to 14 can be formed so as to cover a wide area of the upper main surface of the SOI substrate 10. In other words, since the limited substrate area can be used effectively, the apparatus can be further miniaturized while maintaining high magnetic detection sensitivity.

(Embodiment 20)
30 and 31 show the configuration of the magnetic detection device according to the twentieth embodiment of the present invention. FIG. 30 (a) is a plan view of the same device, and FIG. 30 (b) is an X-axis in FIG. 30 (a). FIG. 30C is a cross-sectional view of the apparatus along the line Y-Y in FIG. 30A, and FIG. 31 is a perspective view of the apparatus along the line X. In the magnetic detection device 900 according to the present embodiment, a semiconductor substrate 5 made of silicon is used instead of the SOI substrate 10, and a concave portion having the same shape as the concave portions 31 to 34 of the magnetic detection device 500 shown in FIGS. 71 to 74 are formed so as to open on the upper main surface of the semiconductor substrate 5, and the magnetic parts 11 to 14 are formed so as to individually cover the recesses 71 to 74 in a film shape or a plate shape. The magnetoelectric conversion elements 21 and 26 to 28 are different from the magnetic detection device 500 in that they are formed on the lower main surface side of the semiconductor substrate 5. On the back surface side of the support substrate 1, that is, on the lower main surface side, a magnetic body portion 45 is formed so as to cover the whole in a film shape or a plate shape.

  Each of the recesses 71 to 74 is formed such that the diagonal line of the square opening is parallel to the X-axis direction and the Y-axis direction. In other words, the two sides of the opening are inclined at an angle of 45 ° with respect to the two sides of the planar view contour of the semiconductor substrate 5. Thereby, the opening part of the recessed part 71 and the opening part of the recessed part 72 are opposite to each other in the X-axis direction. Similarly, the opening part of the recessed part 73 and the opening part of the recessed part 74 are arranged in the X-axis direction. The corners face each other. Moreover, the opening part of the recessed part 71 and the opening part of the recessed part 73 have the corner | angular part of the Y-axis direction mutually opposed, and similarly the opening part of the recessed part 72 and the opening part of the recessed part 74 are the angles of the Y-axis direction. The parts are opposed to each other.

  Magnetoelectric transducers 22 to 25 having sensitivity axes in the X-axis direction or the Y-axis direction are formed on the upper main surface side semiconductor substrate 5 and are sandwiched between corners of the openings of the recesses 71 to 74. Is arranged. The magnetic body portions 11 to 14 are formed so as to individually cover the edges of the recesses 71 to 74 in a film shape or plate shape, and as in the case of the magnetic detection device 500, the corner portions of the contour in plan view The magnetoelectric transducers 22 to 25 are closest to and face each other on a facing surface (not shown) formed on the surface.

  Magnetoelectric transducers 21 and 26 to 28 having a sensitivity axis in the Z-axis direction are formed on the bottom surface of recesses 71 to 74. The bottom surfaces of the recesses 71 to 74 are dimensioned so as to include the high resistance regions 131 that are the magnetic detection regions of the corresponding magnetoelectric conversion elements 21 and 26 to 28. The magnetic body portion 11 and the magnetic body portion 45 sandwich the magnetoelectric conversion element 21 and form a pair of magnetic body pairs that focus the magnetic flux on the magnetoelectric conversion element 21. More specifically, the portion of the magnetic body portion 11 that covers the bottom surface portion of the recess 71 and the portion of the magnetic body portion 45 that faces the portion are orthogonal to the Z-axis direction that is the direction of the sensitivity axis of the magnetoelectric transducer 21. In addition, a pair of opposed surfaces that face each other with the magnetoelectric conversion element 21 interposed therebetween are formed. Since the magnetic body portion 11 is formed so as to cover the recess 71, the pair of the magnetic body portion 11 and the magnetic body portion 45 are closest to each other on this facing surface. The magnetic body portion 12, the magnetoelectric conversion element 27, the concave portion 72, and the magnetic body portion 45 have shapes and positions so as to be in the same relationship as the magnetic body portion 11, the magnetoelectric conversion element 21, the concave portion 71, and the magnetic body portion 45. It has been established. The same applies to the magnetic body 13, the magnetoelectric conversion element 28, the recess 73 and the magnetic body 45, and the magnetic body 14, the magnetoelectric conversion element 26, the recess 74 and the magnetic body 45.

  Since the magnetic detection device 900 is configured as described above, for example, the cross section perpendicular to the X-axis direction of the magnetic body portions 11 and 12 is not only the Y-axis direction along the upper main surface of the semiconductor substrate 5 but also the recess 71. And 72 in the depth direction, that is, the Z-axis direction, the magnetic flux passing through this wide cross-sectional area is focused on the magnetoelectric transducer 22. For this reason, the magnetic detection sensitivity in the X-axis direction by the magnetoelectric transducer 22 is further improved. The same can be said for the other magnetoelectric transducers 23 to 25. Therefore, the magnetic detection device 900 has an advantage that higher detection sensitivity can be obtained with respect to an external magnetic field in the XY plane. In addition, since the two sides of the openings of the recesses 71 to 74 are inclined at an angle of 45 ° with respect to the two sides of the outline of the semiconductor substrate 5 in plan view, the magnetoelectric conversion elements 22 to 25 are caused by the magnetic parts 11 to 14. It is possible to easily realize a structure sandwiching the.

(Embodiment 21)
32 and 33 show the configuration of the magnetic detection device according to the twenty-first embodiment of the present invention. FIG. 32 (a) is a plan view of the same, and FIG. 32 (b) is an X-axis of FIG. 32 (a). FIG. 32C is a sectional view of the apparatus along the line Y-Y in FIG. 32A, and FIG. 33 is a perspective view of the apparatus along the line X. In the magnetic detection apparatus 1000 according to the present embodiment, the concave portions 31 to 34 selectively formed on the back surface of the support substrate 1, that is, the lower main surface of the SOI substrate 10, are formed as grooves perpendicular to the lower main surface, that is, vertical grooves. It is different from the magnetic detection device 600 according to the seventeenth embodiment in that it is formed. Such vertical grooves can be easily formed using deep RIE (Deep Reactive Ion Etching).

  In the magnetic detection device 1000, compared to the magnetic detection device 600 or the like in which the concave portions 31 to 34 are formed in a tapered shape by using anisotropic etching, the dimensions of the bottom surfaces of the concave portions 31 to 34 (the dimensions of the openings and the sizes thereof). Can be set with high accuracy. In anisotropic etching, the size of the bottom surface of the recesses 31 to 34 changes according to the variation in the thickness of the support substrate 1. For example, when a (100) silicon substrate is used as the support substrate 1, if the thickness of the support substrate 1 changes by Δt, the dimension of one side of the bottom surface of the recesses 31 to 34 (this is assumed to be L) is It changes by √2 × Δt. Assuming a typical tolerance of the thickness of the support substrate 1 of ± 10 μm, this dimension L changes by 28 μm at the maximum. On the other hand, when the recesses 31 to 34 are formed using deep RIE, the influence on the dimension L due to the thickness tolerance of the support substrate 1 is small, and the tolerance of the dimension L is reduced to about 10 μm by controlling the process variation. Can be suppressed within. As a result, in the magnetic detection device 1000, the variation in the action of focusing the magnetic flux can be kept low, so that magnetic detection with higher accuracy can be realized. In particular, this effect is significant when the dimensions of the magnetoelectric transducers 21 and 26 to 28 are about 10 μm to about 20 μm, which is so small that the tolerance is not negligible. Moreover, since the opening area of the recessed parts 31-34 can be set small, the advantage that the mechanical strength of the SOI substrate 10 improves is acquired.

(Embodiment 22)
FIG. 34 shows a configuration of a magnetic detection device according to the twenty-second embodiment of the present invention. FIG. 34 (a) is a plan view of the same, and FIG. 34 (b) is an XX section line of FIG. 34 (a). FIG. 34C is a cross-sectional view of the apparatus taken along the line YY of FIG. 34A. The magnetic detection device 1100 according to the present embodiment is different from the magnetic detection device 1000 according to the twenty-first embodiment in that the magnetic body portions 41 to 44 are embedded in the recesses 31 to 34, respectively. For this reason, the advantage that the magnetic flux which passes the opposing surface of the magnetic body parts 41-44 facing the magnetoelectric conversion elements 21 and 26-28 is distributed uniformly is acquired. The magnetic parts 41 to 44 can be easily embedded in the recesses 31 to 34 by using a plating process or the like.

  As shown in FIGS. 32B and 32C, when the magnetic body portions 41 to 44 are formed in a film shape or plate shape on the side wall surfaces of the recess portions 31 to 34, the bottom surfaces of the recess portions 31 to 34 are formed. In the direction perpendicular to the SOI substrate 10 that passes through the region where the magnetoelectric transducers 22 and 26 to 28 are provided, which is a region facing the magnetic body portions 11 to 14 on the upper main surface side of the SOI substrate 10. The magnetic flux in the direction is concentrated mainly on the magnetic body portions 41 to 44 provided on the side walls of the recesses 31 to 34 in the plan view, and is not sufficiently focused on the magnetoelectric transducers 22 and 26 to 28 in the plan view. On the other hand, as shown in FIG. 34, the concave portions 31 to 34 are embedded with the magnetic body portions 41 to 44, so that the bottom surface portions of the concave portions 31 to 34 and the magnetic body portions 11 to 14 on the upper main surface side of the SOI substrate 10 The magnetic simulation shows that the magnetic flux in the direction perpendicular to the SOI substrate 10 (Z-axis direction) passing through the region where the magnetoelectric transducers 22 and 26 to 28 are provided is substantially uniform in that region. I know.

  If the magnetic flux is not uniform, the magnetic flux concentrates in a region that is not the magnetic sensitivity region of the magnetoelectric transducers 22, 26 to 28, or the magnetic flux concentrates only in a part of the magnetic sensitivity region. It may not work effectively for sensitivity. On the other hand, in the magnetic detection device 1100, the focused magnetic flux can be effectively passed through the magnetic sensitivity regions of the magnetoelectric transducers 22 and 26 to 28, so that the magnetic sensitivity can be further improved. It is done. In particular, this effect is significant when the dimensions of the magnetoelectric conversion elements 22 and 26 to 28 are smaller than the dimensions of the bottom surfaces of the recesses 31 to 34.

(Embodiment 23)
FIG. 35 is a block diagram showing a configuration of a geomagnetic sensor according to Embodiment 23 of the present invention. The geomagnetic sensor 90 includes a magnetic detection device 91 and an amplifier 92 according to any of the seventh to twenty-second embodiments. The amplifier 92 amplifies the magnetic detection signal from the magnetic detection device 91. The amplifier 92 preferably also has a power source for supplying a current to the magnetoelectric conversion element included in the magnetic detection device 91. The magnetic detection device 91 preferably includes the Wheatstone bridge illustrated in FIG. The magnetic detection device 91 and the amplifier 92 may have separate semiconductor substrates, but may have a common semiconductor substrate. That is, the geomagnetic sensor may be realized on a single substrate (so-called single chip) by integrating the circuit of the amplifier 92 on the SOI substrate 10 or the semiconductor substrate 5 included in the magnetic detection device 91. Since the geomagnetic sensor 90 includes the magnetic detection device 91 according to any one of Embodiments 7 to 22, detection with high sensitivity to geomagnetism, which is a weak magnetic field, is possible. Further, when the geomagnetic sensor 90 includes any one of the magnetic detection device according to the eleventh embodiment or the magnetic detection devices 100 to 1100 according to the twelfth to twenty-second embodiments as the magnetic detection device 91, the geomagnetic sensor 90 is small in size and highly sensitive. Enables detection of axial geomagnetism.

(Other embodiments)
(1) In Embodiments 7 to 23, an example in which a diode magnetic sensor is used as the magnetoelectric conversion element 205, 21 or the like has been shown. However, as already described, the magnetic detection device of the present invention is widely used as a magnetoelectric conversion element. In addition to the magnetoelectric conversion elements 171 to 176 and 160, an element that can be formed on a semiconductor substrate, for example, an MR element, a Hall element, a magnetic impedance element, or a fluxgate element can be used.

  (2) In the above embodiments, the example in which the recesses 31 to 34 and 71 to 74 are formed only on one of the upper main surface or the lower main surface of the semiconductor substrate is shown. is there. Thereby, since the area of the opening part of a recessed part can be made small, the advantage that it is easy to further reduce a magnetic detection apparatus is acquired.

  (3) In the embodiments 12 to 21, the magnetic body portions 41 to 44 and 11 to 14 cover the recesses 31 to 34 and 71 to 74 in a film shape or a plate shape. However, the embodiments are also implemented in these embodiments. You may form so that the magnetic body parts 41-44 and 11-14 may be embedded in the recessed parts 31-34 and 71-74 like the form 22. Thereby, the magnetic detection sensitivity can be further increased.

It is a figure which shows the structure of the magnetoelectric conversion element by Embodiment 1 of this invention. It is a figure which shows the structure of the magnetoelectric conversion element by Embodiment 2 of this invention. It is a figure which shows the structure of the magnetoelectric conversion element by Embodiment 3 of this invention. It is a figure which shows the structure of the magnetoelectric conversion element by Embodiment 4 of this invention. It is a figure which shows the structure of the magnetoelectric conversion element by Embodiment 5 of this invention. It is a figure which shows the structure of the magnetoelectric conversion element by Embodiment 6 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 7 of this invention, (a) is a front view, (b) is the XX 'sectional view taken on the line (a), (c) is a rear view, (D) is the YY 'sectional view taken on the line of the figure (a). It is sectional drawing for demonstrating the convergence operation | movement of the magnetic flux by the magnetic detection apparatus of FIG. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 8 of this invention, (a) is a front view, (b) is the XX 'sectional view taken on the line (a), (c) is a rear view, (D) is the YY 'sectional view taken on the line of the figure (a). It is sectional drawing for demonstrating the convergence operation | movement of the magnetic flux by the magnetic detection apparatus of FIG. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 9 of this invention, (a) is a front view, (b) is the XX 'line sectional drawing of the figure (a), (c) is a rear view, (D) is the YY 'sectional view taken on the line of the figure (a). It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 10 of this invention, (a) is a front view, (b) is the XX 'sectional view taken on the line (a), (c) is a rear view, (D) is the YY 'sectional view taken on the line of the figure (a). It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 11 of this invention, (a) is a front view, (b) is the XX 'sectional view taken on the line (a), (c) is a rear view, (D) is the YY 'sectional view taken on the line of the figure (a). It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 12 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 12 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 13 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 13 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 14 of this invention. It is a circuit diagram which shows the structural example of a Wheatstone bridge. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 14 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 15 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 15 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 16 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 16 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 17 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 17 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 18 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 19 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 19 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 20 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 20 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 21 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 21 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by Embodiment 22 of this invention. It is a figure which shows the structure of the geomagnetic sensor by Embodiment 23 of this invention. It is a figure which shows the structure of the magnetic detection apparatus by a prior art. It is a perspective view which shows the structure of the semiconductor magnetic sensor by a prior art.

Explanation of symbols

3 SOI layer 5 Semiconductor substrate 10 SOI substrate (semiconductor substrate)
11 Magnetic body part (first magnetic body part) 12 Magnetic body part (second magnetic body part)
13 Magnetic body part (third magnetic body part) 14 Magnetic body part (fourth magnetic body part)
21 Magnetoelectric conversion element (first magnetoelectric conversion element)
22, 22a, 22b Magnetoelectric conversion element (second magnetoelectric conversion element)
23, 23a, 23b Magnetoelectric conversion element (third magnetoelectric conversion element)
24, 24a, 24b Magnetoelectric conversion element (fourth magnetoelectric conversion element)
25, 25a, 25b Magnetoelectric conversion element (5th magnetoelectric conversion element)
26 Magnetoelectric conversion element (6th magnetoelectric conversion element)
27 Magnetoelectric Conversion Element (Seventh Magnetoelectric Conversion Element)
28 Magnetoelectric conversion element (8th magnetoelectric conversion element)
31-34, 71-74 Concave portion 41 Magnetic body portion (fifth magnetic body portion)
42 Parts of the magnetic part (seventh magnetic part)
43 Part of magnetic body part (8th magnetic body part)
44 Part of the magnetic part (sixth magnetic part)
51 to 54 Step 90 Geomagnetic sensor 91, 100, 200, 300, 400, 500, 600, 700, 800, 900 Magnetic detection device 92 Amplifier Z Normal direction 101 High resistance region 102 Anode region 103 Cathode region 104 Recombination layer 106 178 Semiconductor substrate 171 to 176 Magnetoelectric conversion element 201 Support substrate (semiconductor substrate) 205 Magnetoelectric conversion element 214 Recess 215 First magnetic body part 216 Second magnetic body part

Claims (36)

A magnetoelectric transducer formed on a main surface of a semiconductor substrate,
an anode region which is a p-type semiconductor region;
a cathode region which is an n-type semiconductor region;
A high resistance region having an impurity concentration lower than any of the anode region and the cathode region sandwiched between the anode region and the cathode region;
A magnetoelectric conversion element comprising: a recombination layer formed on at least a part of one side surface connecting the anode region and the cathode region in the high resistance region and having a recombination center introduced therein.   The magnetoelectric conversion element according to claim 1, wherein the one side surface is substantially perpendicular to the main surface.   The magnetoelectric transducer according to claim 1, wherein the one side surface is inclined with respect to the main surface so as to face obliquely above the main surface.   4. The magnetoelectric conversion element according to claim 1, wherein the semiconductor substrate is an SOI substrate, and the magnetoelectric conversion element is formed in an SOI layer included in the SOI substrate. 5. The magnetoelectric conversion element is formed in a substantially U shape in plan view,
The anode region is formed at one tip of the pair of substantially U-shaped legs,
The cathode region is formed at the other tip of the pair of legs,
5. The recombination layer according to claim 1, wherein the recombination layer is formed on a side surface of the pair of leg portions facing each other or on a side surface of the pair of leg portions facing outward from each other in the high resistance region. Any one of the magnetoelectric conversion elements. A first magnetoelectric conversion element and a second magnetoelectric conversion element formed on the main surface of the same semiconductor substrate;
Each of the first magnetoelectric conversion element and the second magnetoelectric conversion element is a magnetoelectric conversion element according to any one of claims 1 to 4,
The first magnetoelectric conversion element and the second magnetoelectric conversion element are connected in series so that the same forward current flows,
Each of the first magnetoelectric conversion element and the second magnetoelectric conversion element is formed to extend along a linear axis connecting the anode region and the cathode region,
The first magnetoelectric conversion element and the second magnetoelectric conversion element are substantially parallel to each other, and the respective high resistance regions are arranged side by side,
The recombination layer of the first magnetoelectric conversion element and the recombination layer of the second magnetoelectric conversion element are respectively formed on at least a part of the side surfaces facing each other or the side surfaces facing each other in the corresponding high resistance region. element. Comprising first to fourth magnetoelectric transducer elements formed on the main surface of the same semiconductor substrate;
Each of the first to fourth magnetoelectric conversion element units is the magnetoelectric conversion element according to any one of claims 1 to 6,
The first magnetoelectric conversion element part and the fourth magnetoelectric conversion element part are connected in series so that the same forward current flows to form a first series circuit,
The second magnetoelectric conversion element portion and the third magnetoelectric conversion element portion are connected in series so that the same forward current flows to form a second series circuit,
The first series circuit and the second series circuit are connected in parallel with each other so that forward currents shunt each other.
Each of the recombination layer of the first magnetoelectric conversion element portion and the recombination layer of the third magnetoelectric conversion element portion is on the right side in a plan view with respect to the forward current traveling direction, among the corresponding side surfaces of the high resistance region. Formed on at least a part of the side surface,
Each of the recombination layer of the second magnetoelectric conversion element unit and the recombination layer of the fourth magnetoelectric conversion element unit is on the left side in a plan view with respect to the forward current traveling direction, among the corresponding side surfaces of the high resistance region. A magnetoelectric conversion element formed on at least a part of the side surface.   A flat semiconductor substrate, a magnetoelectric conversion element provided on the first main surface side of the semiconductor substrate, and a first electrode provided on the first main surface side of the semiconductor substrate so as to face the magnetoelectric conversion element. A magnetic material portion and a second magnetic material portion provided on the second main surface side of the semiconductor substrate, wherein the first and second magnetic material portions are opposed to each other with the magnetoelectric conversion element interposed therebetween. And the semiconductor substrate is provided with a recess from the second main surface side to the first main surface, and the bottom of the recess is the The peripheral wall portion of the recess facing the magnetoelectric conversion element and surrounding the bottom portion is formed substantially parallel to the normal direction of the first and second main surfaces, and the second magnetic body portion is at least the bottom portion A magnetic detection device formed so as to cover.   9. The magnetic detection apparatus according to claim 8, wherein at least one of the first and second magnetic body portions is formed to be substantially flat.   10. The magnetic detection device according to claim 8, wherein the first and second magnetic body portions are formed in a shape that protrudes in a direction in which opposing portions sandwiching the magnetoelectric conversion element approach each other. .   The magnetic detection device according to claim 8, wherein the second magnetic body portion is formed so as to cover a bottom portion and a peripheral wall portion of the recess.   12. The facing portions of the first and second magnetic body portions facing each other with the magnetoelectric conversion element interposed therebetween are formed in a shape that is flat and substantially parallel to each other. Magnetic detection device.   At least one of the opposing portions of the first and second magnetic body portions facing each other across the magnetoelectric conversion element is smaller than the projected area of the portion that detects magnetism of the magnetoelectric conversion element onto the facing portion. The magnetic detection device according to claim 8, wherein the magnetic detection device has the same area.   Both opposing portions of the first and second magnetic body portions facing each other with the magnetoelectric conversion element interposed therebetween have an area that is equal to or larger than a projected area of the portion that detects magnetism of the magnetoelectric conversion element on the facing portion. The magnetic detection device according to claim 8, wherein the magnetic detection device is a magnetic detection device.   15. The semiconductor substrate according to claim 8, wherein the semiconductor substrate is made of a silicon single crystal substrate having a main surface orientation of (100), and a portion on the opening surface side of the recess is formed by anisotropic etching. The magnetic detection apparatus described in 1.   16. The magnetic detection device according to claim 8, wherein the three magnetoelectric conversion elements for detecting magnetism in each axial direction of a three-dimensional orthogonal coordinate system are provided on the semiconductor substrate. A semiconductor substrate having a first main surface and a second main surface parallel to each other, wherein a recess is selectively formed in at least one of the first main surface and the second main surface;
A first magnetoelectric transducer formed on the semiconductor substrate and having a sensitivity axis set in a normal direction of the semiconductor substrate;
A second magnetoelectric conversion element formed on the semiconductor substrate and having a sensitivity axis set in a direction perpendicular to the sensitivity axis of the first magnetoelectric conversion element;
A third magnetoelectric transducer formed on the semiconductor substrate and having a sensitivity axis set in a direction perpendicular to both the sensitivity axis of the first magnetoelectric transducer and the sensitivity axis of the second magnetoelectric transducer;
The first magnetoelectric transducer has a first opposed surface pair that is a pair of opposed surfaces that are orthogonal to the sensitivity axis of the first magnetoelectric transducer and are opposed to each other with the first magnetoelectric transducer interposed therebetween, and at least one is formed to cover the recess. A pair of magnetic material pairs formed on the first main surface side and the second main surface side on the semiconductor substrate so that the first opposed surface pairs are closest to each other,
A second magnetic body portion formed on the semiconductor substrate so as to sandwich the second magnetoelectric conversion element in cooperation with the first magnetic body portion which is one of the pair of magnetic body pairs;
A third magnetic part formed on the semiconductor substrate so as to sandwich the third magnetoelectric conversion element in cooperation with the first magnetic part;
The first magnetic body portion and the second magnetic body portion are a pair of opposed surfaces that are a pair of opposed surfaces that are orthogonal to the sensitivity axis of the second magnetoelectric conversion element and face each other with the second magnetoelectric conversion element interposed therebetween. And are formed so that they are closest to each other in the second opposed surface pair,
The first magnetic body portion and the third magnetic body portion are a third opposed surface pair that is a pair of opposed surfaces that are orthogonal to the sensitivity axis of the third magnetoelectric conversion element and face each other across the third magnetoelectric conversion element. And the third opposing surface pair is formed so as to be closest to each other. A fourth magnetic part formed on the semiconductor substrate;
The shape and position of the first to fourth magnetic body portions are determined so as to be ¼ rotationally symmetric about an axis of symmetry that is an axis along the normal direction. Item 18. The magnetic detection device according to Item 17. A fourth magnetoelectric conversion element formed on the semiconductor substrate and having a sensitivity axis set in the same direction as the sensitivity axis of the third magnetoelectric conversion element;
A fifth magnetoelectric conversion element formed on the semiconductor substrate and having a sensitivity axis set in the same direction as the sensitivity axis of the second magnetoelectric conversion element;
The second magnetic body portion and the fourth magnetic body portion are formed on the semiconductor substrate so as to sandwich the fourth magnetoelectric conversion element, and are orthogonal to the sensitivity axis of the fourth magnetoelectric conversion element. A fourth opposed surface pair that is a pair of opposed surfaces facing each other with the magnetoelectric conversion element interposed therebetween, and is formed so that the fourth opposed surface pair is closest to each other;
The third magnetic body portion and the fourth magnetic body portion are formed on the semiconductor substrate so as to sandwich the fifth magnetoelectric conversion element, and are orthogonal to the sensitivity axis of the fifth magnetoelectric conversion element. The fifth opposed surface pair, which is a pair of opposed surfaces facing each other with the magnetoelectric conversion element interposed therebetween, is formed so as to be closest to each other in the fifth opposed surface pair. Magnetic detection device. A plurality of the recesses are selectively formed on at least one of the first main surface and the second main surface;
The magnetic detection device includes:
A sixth magnetoelectric transducer formed on the semiconductor substrate and having a sensitivity axis set in a normal direction of the semiconductor substrate;
Formed on the semiconductor substrate so as to be ½ rotationally symmetric about the symmetry axis together with the fifth magnetic body portion that is the other of the magnetic body pair portion that forms a pair with the first magnetic body portion, A sixth magnetic body portion whose shape and position are defined,
The fourth magnetic body portion and the sixth magnetic body portion are a pair of opposing surfaces that are a pair of opposing surfaces that are orthogonal to the sensitivity axis of the sixth magnetoelectric conversion element and oppose each other with the sixth magnetoelectric conversion element interposed therebetween. And at least one of the first main surface and the second main surface on the semiconductor substrate so as to be closest to each other in the sixth facing surface pair. The magnetic detection device according to claim 18, wherein the magnetic detection device is formed on one side and the other side. 4 or more of the recesses are selectively formed in at least one of the first main surface and the second main surface,
The magnetic detection device includes:
A seventh magnetoelectric transducer formed on the semiconductor substrate and having a sensitivity axis set in the normal direction;
An eighth magnetoelectric transducer formed on the semiconductor substrate and having a sensitivity axis set in the normal direction;
A seventh magnetic part formed on the semiconductor substrate;
An eighth magnetic body portion formed on the semiconductor substrate;
The second magnetic body portion and the seventh magnetic body portion are a pair of opposed surfaces that are a pair of opposed surfaces that are orthogonal to the sensitivity axis of the seventh magnetoelectric conversion element and face each other with the seventh magnetoelectric conversion element interposed therebetween. And at least one of the first main surface and the second main surface on the semiconductor substrate so as to be closest to each other in the seventh opposed surface pair. Formed on one side and the other side,
The third magnetic body portion and the eighth magnetic body portion are a pair of opposed surfaces that are a pair of opposed surfaces that are orthogonal to the sensitivity axis of the eighth magnetoelectric conversion element and face each other with the eighth magnetoelectric conversion element interposed therebetween. And at least one of the first main surface and the second main surface on the semiconductor substrate so as to be closest to each other in the eighth opposed surface pair. Formed on one side and the other side,
21. The magnetic detection device according to claim 20, wherein the fifth to eighth magnetic body portions are shaped and positioned so as to be ¼ rotationally symmetric about the symmetry axis.   The magnetic detection device according to claim 20 or 21, wherein the fifth magnetic body portion and the sixth magnetic body portion are separated from each other. The recess is selectively formed in the second main surface;
The first to third magnetoelectric transducers are formed on the first main surface side,
23. The magnetic detection device according to claim 17, wherein the first to third magnetic body portions are formed in a substantially flat plate shape along the first main surface.   24. The magnetic detection device according to claim 23, wherein each of the first to third magnetic parts has a step in the normal direction. The width of the contour in plan view perpendicular to the sensitivity axis of the second magnetoelectric conversion element as the first magnetic body portion is a region adjacent to one of the second opposed surface pairs and is closer to the second magnetoelectric conversion element. Has a region that decreases monotonously, and is a region adjacent to one of the third opposed surface pairs, and is closer to the third magnetoelectric conversion element, the contour in plan view that is orthogonal to the sensitivity axis of the third magnetoelectric conversion element Has a region where the width of monotonously decreases,
The width of the contour in plan view perpendicular to the sensitivity axis of the second magnetoelectric conversion element as the second magnetic body portion is a region adjacent to the other of the second opposing surface pair and is closer to the second magnetoelectric conversion element Has a region that decreases monotonously,
The width of the contour in plan view perpendicular to the sensitivity axis of the third magnetoelectric conversion element as the third magnetic body portion is a region adjacent to the other of the third opposing surface pair and is closer to the third magnetoelectric conversion element 25. The magnetic detection device according to claim 23, wherein the magnetic detection device has a monotonically decreasing region. The width of the contour in plan view perpendicular to the sensitivity axis of the second magnetoelectric conversion element as the first magnetic body portion is a region adjacent to one of the second opposed surface pairs and is closer to the second magnetoelectric conversion element. In a plan view perpendicular to the sensitivity axis of the third magnetoelectric conversion element as it is adjacent to the third magnetoelectric conversion element and is adjacent to one of the third opposing surface pairs. Having an area where the width of the contour decreases stepwise,
The width of the contour in plan view perpendicular to the sensitivity axis of the second magnetoelectric conversion element as the second magnetic body portion is a region adjacent to the other of the second opposing surface pair and is closer to the second magnetoelectric conversion element Has an area that gradually decreases,
The width of the contour in plan view perpendicular to the sensitivity axis of the third magnetoelectric conversion element as the third magnetic body portion is a region adjacent to the other of the third opposing surface pair and is closer to the third magnetoelectric conversion element 25. The magnetic detection device according to claim 23, wherein the magnetic detection device has a region that gradually decreases.   27. The magnetic detection device according to claim 23, wherein the semiconductor substrate is an SOI substrate, and each of the first to third magnetic parts is formed in an SOI layer. 3 or more of the recesses are selectively formed on the first main surface,
The first to third magnetic parts are formed so as to individually cover the recesses,
23. The other of the pair of magnetic bodies paired with the first magnetic body section is formed in a substantially flat plate shape along the second main surface. Magnetic detection device. The semiconductor substrate has a rectangular outline in plan view,
29. The magnetic detection device according to claim 20, wherein a contour of each opening of the concave portion is a rectangle parallel to each other and a contour in plan view of the semiconductor substrate. . The semiconductor substrate has a rectangular outline in plan view,
29. The magnetic detection device according to claim 28, wherein an outline of each opening of the concave portion is a rectangle in which each side is inclined at an angle of 45 [deg.] With respect to the outline in plan view of the semiconductor substrate. The second magnetoelectric conversion element has a first element group that is a plurality of magnetoelectric conversion elements having a sensitivity axis in the same direction, and the second opposing surface pair individually faces the first element group. It is divided into opposed surface pairs,
The third magnetoelectric conversion element has a second element group that is a plurality of magnetoelectric conversion elements having a sensitivity axis in the same direction, and the third opposed surface pair individually faces the second element group. The magnetic detection device according to any one of claims 17 to 30, wherein the magnetic detection device is divided and arranged in a pair of opposed surfaces. A semiconductor substrate having a main surface;
A magnetoelectric transducer formed on the semiconductor substrate on the main surface side and having a sensitivity axis set in a direction along the main surface;
A substantially flat plate having a step in the normal direction of the main surface, the first magnetic body portion formed on the semiconductor substrate on the main surface side;
A second magnetic layer having a substantially flat shape having a step in the normal direction and formed on the semiconductor substrate on the main surface side so as to sandwich the magnetoelectric conversion element in cooperation with the first magnetic body portion. With a body,
The first magnetic body portion and the second magnetic body portion have a pair of opposed surfaces that are orthogonal to the sensitivity axis of the magnetoelectric conversion element and are opposed to each other with the magnetoelectric conversion element interposed therebetween. Is formed so as to be closest to each other. The planar view outline of the semiconductor substrate is a square,
The shape and position are set so that all the magnetoelectric conversion elements and all the magnetic body parts formed on the semiconductor substrate are line-symmetric with respect to one diagonal line in the plan view outline of the semiconductor substrate. The magnetic detection device according to claim 17, wherein the magnetic detection device is a magnetic detection device.   34. The magnetic detection device according to claim 8, wherein all the magnetoelectric conversion elements formed on the semiconductor substrate are semiconductor diode magnetic sensors.   8. The magnetoelectric conversion element according to claim 1, wherein the semiconductor diode magnetic sensor has a sensitivity axis in a normal direction of a main surface of the semiconductor substrate. Item 34. The magnetic detection device according to Item 34. A magnetic detection device according to any one of claims 8 to 35;
And an amplifier that amplifies an output signal of the magnetic detection device.

Images