JP2005150562A - Substrate processing device and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing device having a chemical pollutant measuring device capable of realizing an evaluation of pollution caused by a chemical pollutant by classifying an organic matter at several steps of boiling levels and showing respective concentration levels. <P>SOLUTION: The substrate processing device comprises a housing 11 for housing a process tube 26 in which a processing chamber 25 for processing a substrate 1 is formed, a quartz crystal 75 placed in the housing 11 and exposed to an atmosphere in the housing, temperature controllers 70, 73 for heating a temperature of the quartz crystal 75, a detecting part 77 for detecting an oscillation frequency of the quartz crystal 75, a temperature controller 74 for controlling the temperature controllers 70, 73 so as to increase the temperature of the quartz crystal in stages, and a controlling part 78 for computing a quantity and concentration of a plurality of types of an organic matter having different boiling points by respectively detecting the frequency of the quartz crystal at each stage by the detecting part 77. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a technique for evaluating contamination by organic substances in the atmosphere in a substrate processing apparatus.

In the IC manufacturing method, a batch type vertical diffusion / CVD apparatus (hereinafter simply referred to as a CVD apparatus) is used for forming a CVD film such as an insulating film or a metal film on a wafer or diffusing impurities.
Is widely used. In the conventional CVD apparatus of this type, the wafer surface is contaminated and I
In order to suppress particles (dust) that adversely affect the yield of the manufacturing method of C, a clean unit that blows clean air is installed inside the housing.

In recent years, it has been elucidated that acidic gases, alkaline gases, and organic gases, which are highly reactive gaseous pollutants, also contaminate wafers.
reference. Therefore, CVD of a filter (hereinafter referred to as a chemical filter) for adsorbing and removing organic substances (hereinafter referred to as chemical contaminants) such as DOP (diotic phthalic acid), DBP (dibutylphthalic acid), and polyhydric alcohol. There is a demand for installation in equipment. "The actual situation of pollution in ULSI manufacturing, the actual situation of the manufacturing site and future issues" REALIZE Inc. Publishing 1999

However, chemical filters are used to remove chemical contaminants such as acids, alkalis, and organic substances through the physical adsorption and chemical reaction using active fibers with a filter media carrying a chemical additive. Adsorption ability and chemical reaction ability deteriorate with time. Therefore, even in a CVD apparatus in which a chemical filter is installed, it is necessary to regularly or irregularly evaluate the amount and concentration of chemical contaminants in the atmosphere in the housing. Incidentally, chemical contaminants are not limited to intrusion due to deterioration of the chemical filter over time, but may flow into the case when the wafer carrier is loaded into or unloaded from the case, or may enter through the gap in the case. .

As a method of evaluating the amount and concentration of chemical contaminants in the casing, the chemical contaminants present in the atmosphere in the casing are adsorbed on an adsorbent (for example, activated carbon or wafer) placed in the casing and sampled. In general, an offline evaluation method using a dedicated analyzer is conceivable. However, in this offline evaluation method, it is necessary to construct a dedicated evaluation system. The installation of the adsorbent for sampling affects the operation of the CVD apparatus. There are cases where the sampling time interval is long, and there is a problem that it takes time until an evaluation result is obtained.

An object of the present invention is to provide a substrate processing apparatus having a chemical pollutant measuring apparatus capable of realizing the evaluation of contamination by chemical pollutants, classifying organic substances by several boiling point levels, and indicating the respective concentration levels, and An object of the present invention is to provide a method of manufacturing a semiconductor device using the device.

The first feature of the present invention is that a housing that houses a process tube that forms a processing chamber for processing a substrate, a vibrator that is installed inside the housing and is exposed to the atmosphere inside the housing,
A heating means for heating the vibrator; a detection unit for detecting an oscillation frequency of the vibrator; a temperature control means for controlling the heating means to raise the temperature of the vibrator in stages; It has control means for controlling to calculate the amounts and concentrations of a plurality of types of organic substances having different boiling points by detecting the oscillation frequency of the vibrator from the detection unit.

According to a second feature of the present invention, in the first feature, the vibrator is a QCM.

The third feature of the present invention is that the vibrator provided in the housing is exposed to the atmosphere in the housing, the temperature of the vibrator is raised in stages, and the vibrator in each stage is A step of detecting the oscillation frequency, a step of calculating amounts and concentrations of a plurality of types of organic substances having different boiling points from the detection result, a step of carrying a substrate into a processing chamber provided in a housing, and There exists a process of processing a board | substrate within a reaction furnace, and the process of carrying out the board | substrate after a process from the said reaction furnace.

According to the present invention, it is possible to evaluate contamination due to chemical pollutants by using the difference in boiling points of organic pollutants by controlling the temperature of the crystal resonator and increasing it stepwise. Also, if the output device can be used to notify the user of the evaluation result, the low-boiling organic substance level alarm, which has a relatively small effect on semiconductor device manufacturing, is warned, and the chemical filter is replaced when the medium-boiling organic substance alarm is issued. Such maintenance becomes possible.

In the present embodiment, the substrate processing apparatus according to the present invention includes C, as shown in FIG.
It is configured as a VD apparatus (batch type vertical diffusion / CVD apparatus), and the CVD apparatus 10 includes a casing 11 constructed in an airtight chamber structure. In general, as a carrier (conveying jig) for storing and transporting a plurality of wafers (substrates) 1 one by one, an open cassette (in the form of a substantially cubic box having a pair of opposed surfaces opened) And a FOUP (front opening unified pod) in which a cap is detachably mounted on the opening surface. In CVD apparatus 10 according to the present embodiment, cassette 2 is used as a carrier for wafer 1.

A cassette loading / unloading port (hereinafter referred to as a cassette port) 12 for loading / unloading the cassette 2 to / from the inside of the casing 11 is constructed at the lower part of the front surface of the casing 11, and corresponds to the cassette port 12. A cassette loading / unloading port 14 that is opened and closed by a front shutter 13 is opened on the front wall of the housing 11. Cassette 2 for cassette port 12
Is carried in and out by an in-process carrying device (not shown). A plurality of storage shelves 15 for storing a plurality of cassettes 2 are horizontally laid behind the cassette port 12 inside the housing 11. A cassette transfer device installation chamber 16 is set between the cassette port 12 of the housing 11 and the storage shelf 15, and a scalar robot (s
elective compliance assembly robot arm. S
A cassette transfer device 17 configured by CARA is installed. The cassette transfer device 17 is configured to transfer the cassette 2 between the cassette port 12, the storage shelf 15, and a port (hereinafter referred to as a wafer port) 18 for loading and unloading the wafer 1. Yes.

In the space behind the wafer port 18, a standby chamber 19 in which the boat 23 waits for loading and unloading into the process tube 26 is installed, and in the space in front of the standby chamber 19, the wafer transfer device 20 is installed. Has been. The wafer transfer device 20 is configured to transfer the wafer 1 between the wafer port 18 and the boat 23 and deliver it to the cassette 2 and the boat 23.
A boat elevator 21 is vertically installed in a space behind the waiting room 19, and the boat elevator 21 is configured to vertically lift and lower a seal cap 22 that supports the boat 23. That is, the seal cap 22 is formed in a disk shape that can hermetically seal the process tube 26 via the manifold 27, and the boat 23 is vertically supported on the seal cap 22. The boat 23 is configured to hold a large number of wafers 1 in a state where the wafers 1 are aligned horizontally and are horizontally arranged, and the seal cap 22 is carried in and out of the process chamber 25 of the process tube 26 by raising and lowering by the boat elevator 21. It has come to be.

A process tube installation chamber 24 is set at an upper part of the rear end portion of the housing 11, and a process tube 26 forming a processing chamber 25 is vertically established through a manifold 27 in the process tube installation chamber 24. It is installed on the top. Manifold 27 has a processing chamber 2
An exhaust pipe 29 for evacuating 5 is connected. A heater unit 30 is concentrically arranged outside the process tube 26 and is supported by the housing 11. The heater unit 30 is configured to heat the processing chamber 25 uniformly or to a predetermined temperature distribution throughout. Yes.

A lower switchboard portion 31 and an upper switchboard portion 32 for installing electric devices, electric wiring, control devices, and the like are formed in the lower portion and the upper portion of the cassette port 12 inside the housing 11, respectively.

A duct 33 is laid between the upper switchboard 32 and the process tube installation chamber 24 so as to extend in the vertical direction, and a suction port 34 of the duct 33 is opened on the upper surface of the housing 11. The air outlet 35 is opened on the rear side of the storage shelf 15. A chemical filter unit 36 is installed at the suction port 34 of the duct 33. The chemical filter unit 36 includes a chemical filter 37 and a plurality of fans 38, and the chemical filter 37 is configured to be downstream of the group of fans 38. Incidentally, the chemical filter 37 is configured to remove chemical pollutants such as acids, alkalis, and organic substances by physical adsorption and chemical reaction using an active fiber in which a chemical additive is supported on a filter medium.

A cassette transfer device room clean unit (hereinafter referred to as a first clean unit) 40 is installed vertically at the outlet 35 of the duct 33 so as to cover the entire surface. The first clean unit 40 includes a filter (hereinafter referred to as a particle filter) 41 for collecting particles and a plurality of fans 42.
1 is arranged downstream of the fan 42 group. A sub duct 43 is branched horizontally from an intermediate portion of the duct 33, and the outlet 44 of the sub duct 43 is connected to the cassette port 12.
It is opened downwards directly above. A cassette port clean unit (hereinafter referred to as a second clean unit) 45 is installed horizontally at the outlet 44 of the sub duct 43 so as to cover the entire surface. The second clean unit 45 includes a particle filter 46 and a plurality of fans 47, and the particle filter 46 is a fan 4.
It is comprised so that it may become the downstream of 7 groups. A second sub duct 48 is branched obliquely downward from the lower end of the duct 33, and the outlet of the second sub duct 48 is connected to a standby room clean unit (hereinafter referred to as a third clean unit) 49. ing. The third clean unit 49 is installed vertically so as to cover substantially the entire surface of the standby chamber 19. Although not shown in detail, the third clean unit 49 also includes a particle filter and a plurality of fans, and the particle filter is configured to be on the downstream side of the fan group.

As shown in FIG. 2, a front exhaust fan 50 is laid horizontally on the floor surface of the cassette transfer device installation chamber 16 so as to extend in the left-right direction, and on the floor surface of the standby chamber 19. A pair of exhaust ducts 51 are laid side by side on the left and right. The outlet of the front exhaust fan 50 is connected to the inlets of the left and right exhaust ducts 51, and the outlets of the left and right exhaust ducts 51 are opened outside the casing 11. Three rear exhaust fans 52 are arranged in the upper, middle and lower stages on the vertical line at one corner of the rear end of the waiting room 19 opposite to the third clean unit 49, and the rear exhaust fans 52 are on standby. The atmosphere of the chamber 19 is sucked and blown out of the standby chamber 19.

As shown in FIG. 1, the intermediate portion of the duct 33, the vicinity of the air outlet of the second clean unit 45, the lower portion of the cassette transfer device installation chamber 16, and the lower portion of the standby chamber 19 are shown in FIG. 3. Chemical pollutant inspection devices 60 are installed respectively. As shown in FIG. 3, the chemical pollutant inspection apparatus 60 includes a collection pipe 62 that collects the atmosphere in the casing 11, and the upstream end of the collection pipe 62 is located in the middle of the duct 33 in the casing 11. Are connected to sampling ports 61 respectively opened near the outlet of the second clean unit 45, under the cassette transfer device installation chamber 16, and under the standby chamber 19. A supply pipe 65 is connected to the downstream end of the collection pipe 62 via a stop valve 63. An inert gas introduction pipe 66 is connected in the middle of the supply pipe 65, and a stop valve 67 is interposed in the inert gas introduction pipe 66. A sealed container 68 is connected to the downstream end of the supply pipe 65, and the sealed container 68 forms a sealed chamber 69. A temperature controller 70 is installed outside the sealed container 68 and the supply pipe 65, and the temperature controller 70 is configured using a heater or the like. A discharge pipe 71 is connected to the sealed container 68, and the discharge pipe 71 is connected to a pump 72.

A temperature controller 73 is also installed in the sealed chamber 69, and the temperature controller 73 is configured to be controlled by a temperature controller 74 (first controller) in cooperation with the outer temperature controller 70. A crystal resonator 75 is installed in the sealed chamber 69, and a terminal of the crystal resonator 75 passes through the sealed container 68 and is drawn out of the sealed chamber 69. A vibration frequency detector 77 is connected to the oscillation circuit 76 to which the terminal of the crystal resonator 75 is connected.
7 is connected to a chemical contaminant control unit (hereinafter referred to as a control unit) 78 (second controller). The output side of the controller 78 is connected to the controller 79, and the output side of the controller 79 is connected to an output device 79 a such as a buzzer, a lamp and a printer. In addition, the control unit 78 includes a calculation unit 78a that actually calculates the mass and concentration of an organic substance and a storage unit 78b that stores data measured in advance.

  Next, a film forming process in the IC manufacturing method using the CVD apparatus according to the above configuration will be described.

As shown in FIG. 1, the cassette 2 supplied from the cassette loading / unloading port 14 to the cassette port 12 is transported to the storage shelf 15 by the cassette transfer device 17 in the cassette transfer device installation chamber 16 and temporarily. Stored in. The cassette 2 stored in the storage shelf 15 is appropriately picked up by the cassette transfer device 17, transported to the wafer port 18, and transferred. A plurality of wafers 1 stored in the cassette 2 of the wafer port 18 are transferred to the wafer transfer device 20.
Is transferred to the boat 23 and charged (charged).

When the designated wafer 1 is loaded into the boat 23, the boat 23 is loaded into the boat elevator 21.
And is carried into the processing chamber 25 of the process tube 26. When the boat 23 reaches the upper limit, the peripheral portion on the upper surface of the seal cap 22 holding the boat 23 closes the process tube 26 in a sealed state, so that the processing chamber 25 is in an airtightly closed state.

Next, in a state where the processing chamber 25 of the process tube 26 is hermetically closed, the exhaust pipe 29 is evacuated to a predetermined degree of vacuum, heated to a predetermined temperature by the heater unit 30, and a predetermined source gas is supplied to the gas introduction pipe. A predetermined flow rate is supplied by 28. Thereby, a predetermined CVD film is formed on the wafer 1.

When a preset processing time elapses, the boat 23 is lowered by the boat elevator 21, so that the boat 23 holding the processed wafer 1 is carried out to the original standby position in the standby chamber 19 (boat unloading). Is done.

The processed wafers 1 of the boat 23 carried out to the standby chamber 19 are picked up from the boat 23 by the wafer transfer device 20 and transferred to the wafer boat 18 and stored in the empty cassette 2 transferred to the wafer boat 18. The The cassette 2 in which the processed wafer 1 is stored is
The cassette is transferred to the designated position of the storage shelf 15 by the cassette transfer device 17 and temporarily stored. The cassette 2 containing the processed wafer 1 is transported from the storage shelf 15 to the cassette port 12 by the cassette transfer device 17. Cassette 2 transferred to cassette port 12
Is conveyed to the next process.

Thereafter, the operation described above is repeated and the wafer 1 is batch processed by the CVD apparatus 10.

When the above batch processing is carried out, as indicated by the arrows in FIG. 2, clean air 53 is supplied to the first clean unit in the cassette transfer device installation chamber 16, the cassette port 12, and the standby chamber 19. 40, blown out from the second clean unit 45 and the third clean unit 49, sucked in by the front exhaust fan 50 and the rear exhaust fan 52, and exhausted from the pair of exhaust ducts 51 to the outside of the housing 11. Due to the flow of the clean air 53, particles adhering to the surfaces of the cassette 2 and the wafer 1, particles generated by the operation of the cassette transfer device 17, the wafer transfer device 20, and the boat elevator 21 are blown off.

First clean unit 40, second clean unit 45, and third clean unit 4
Since the chemical filter unit 36 is installed at the suction port 34 of the duct 33 connected to the clean air 53, the clean air 53 blown out from the first clean unit 40, the second clean unit 45 and the third clean unit 49 is acidic. Chemical pollutants such as gas, alkaline gas, and organic gas are removed in advance.

By the way, the chemical filter 37 removes chemical contaminants such as acid, alkali, and organic matter by physical adsorption and chemical reaction using an active fiber in which a chemical additive is supported on a filter medium. Adsorption ability and chemical reaction ability deteriorate with time. When the physical adsorption ability and chemical reaction ability of the chemical filter 37 deteriorate, a situation occurs in which the chemical filter 37 is contaminated with chemical contaminants, which causes a decrease in yield of the IC manufacturing method.

However, in the present embodiment, an increase in the amount of chemical contaminants in the clean air 53 of the duct 33 is detected by a chemical contaminant inspection apparatus 60 installed downstream of the chemical filter unit 36.
In this case, the presence or absence of a decrease in the chemical contaminant removal ability of the chemical filter 37 is inspected, and if it is determined as a result of the inspection that the chemical filter 37 has a reduced ability to remove the chemical contaminant, In addition to notifying the fact of replacement of the chemical filter 37, it is also possible to prevent the yield of the IC manufacturing method from being lowered.

Hereinafter, the operation and effect of the chemical contaminant inspection apparatus 60 will be described.
The amount of change in the frequency of the crystal unit 75 is given by the following equation (1).
−Δf = Δm × (f ² / N × A × ρ) (1)
In the equation (1), f is the fundamental oscillation frequency, Δf is the frequency change amount, Δm is the oscillator mass change value, N is the frequency constant, A is the oscillator surface area, and ρ is the crystal density.
Here, the vibrator mass change value Δm changes when chemical contaminants present in the atmosphere adhere to the vibrator surface, and thus the amount of change in chemical contaminants can be obtained by calculating Δm.
Here, when chemical contaminants are blown out from the chemical filter unit 36, the chemical contaminants adhere to the crystal resonator 75 of the chemical contaminant inspection apparatus 60 installed downstream of the chemical filter unit 36, so that the basic vibration The number f decreases. That is, at a certain sampling time of the chemical pollutant inspection device 60, the higher the concentration of the chemical pollutant, the more the crystal resonator 7
Since the deposition rate of chemical contaminants adhering to the surface 5 is high, the frequency change amount Δf increases in a contaminated environment of low-concentration chemical contaminants. Therefore, the concentration of the chemical pollutant can be obtained from the following equation (2) by calculating the value of the frequency change amount Δf at a certain sampling time.
Surface contamination amount = coefficient × atmosphere concentration × {1-exp (−a × t)} (2)
In the formula (2), a is a coefficient and t is time. Therefore, when the reference value is set for the frequency change amount Δf in the sampling time in the controller 79 of the chemical pollutant inspection device 60 and the frequency change amount Δf from the control unit 78 exceeds the reference value, The controller 79 instructs the output device 79a to generate a signal for generating an alarm. Further, the chemical pollutant inspection device 60 can be constructed so that the atmospheric concentration level is divided into several stages (for example, high, medium, and low) and notified.

Further, in the present embodiment, as shown in Table 1, the temperatures at which the first organic substance A, the second organic substance B, and the third organic substance C are desorbed are TA ° C., TB ° C., TC ℃ (TA <
Let TB <TC. ), As shown in Table 2, the crystal resonator 7
By adjusting the temperature 5 by the temperature controller 73, the organic substance A, the organic substance B, and the organic substance C adhering to the crystal unit 75 can be classified and the respective organic substances can be detected.

The operation of the crystal unit 75 will be described with reference to FIG. For example, it is assumed that organic substances are detected by the chemical pollutant inspection apparatus 60 installed in the middle part of the duct 33. FIG. 4 shows the temperature of the operation of the vibrator, with the horizontal axis representing time and the vertical axis representing the crystal vibrator 75.
Shows the temperature. First, the vibrator 75 having nothing attached to the surface is set at a temperature T0 for a time te.
Just expose. At this time, in the chemical contaminant inspection apparatus shown in FIG. 3, the clean air 53 collected from the collection port 61 opened in the duct 33 by opening the stop valve 63 passes through the collection pipe 62 and the supply pipe 65. It is supplied to the sealed chamber 69. During this time, the frequency decreases in accordance with the equation (1) according to the amount of organic matter adhering to the surface (including moisture depending on the temperature). Next, temperature stability,
The oscillator temperature is changed to T0, T1, T2, T3,... Stepwise in the period of time tc when the frequency becomes stable.
・ I will raise it. At this time, desorption of organic substances occurs depending on the temperature. Finally, in order to repeatedly use the vibrator, the surface is cleaned at an appropriate temperature of 250 ° C. or higher.

The calculation of the amount and concentration of organic substances will be described with reference to FIG. FIG. 5A is a temperature vs. frequency characteristic of the crystal resonator that can be acquired when the temperature of the resonator is increased stepwise in FIG.
A case where the surface is not contaminated is indicated as fA (T), and a case where the surface is contaminated is indicated as fB (T).
Here, the temperature characteristic of fA (T) is acquired in advance and stored in the control unit 78 after the surface cleaning process is performed. Since it takes time to attach contamination, it is considered that data can be acquired even in an air atmosphere. However, it is desirable to acquire this temperature characteristic in a clean environment free from contamination. fB (T) has a lower frequency than fA (T) because of contaminants adhering to the surface, and organic substances are desorbed as the temperature is increased from T0 to T4, and fA (T) increases as the temperature increases. Approaching the characteristics of

FIG. 5B shows the difference between fB (T) and fA (T) in FIG. 5A, and this difference is the mass of organic matter adhering to the vibrator surface at each temperature. It corresponds to. FIG. 5 (c) is similar to FIG. 5 (b).
This corresponds to the amount of organic matter desorbed from the surface of the vibrator by heating. In this figure, the temperature on the horizontal axis corresponds to the adhesion energy of the organic oscillator, and this energy generally corresponds to the boiling point of the organic substance. Therefore, by automatically performing the above analysis by the control unit 78 of FIG. 3, the distribution of the organic substances attached to the vibrator can be notified to the user in a form classified by the boiling point.

In addition to chemical contaminants, the quartz vibrator 75 adheres to moisture, so that the inspection (detection) result of chemical contaminants may be affected by temperature and concentration. In this case, before the above-described chemical pollutant inspection work is performed, the crystal unit 75 is moved by the temperature controller 73.
The water adhering to the surface of the crystal unit 75 is removed by heating at a temperature lower than the cleaning temperature of 5, that is, the temperature at which chemical contaminants adhering to the crystal unit 75 are heated and desorbed. In this way, the accuracy of inspection by the chemical contaminant inspection apparatus 60 can be increased. In addition, as a heating temperature for removing water adhering to the surface of the crystal unit 75,
Any temperature above 70 ° C. is preferred.

According to the chemical pollutant inspection device 60 installed in the duct 33 as described above, whether or not the chemical filter 37 has a reduced ability to remove chemical pollutants is inspected, and the amount of change in the frequency per unit time is adjusted. A reference value can be set and an alarm is issued when the reference value is exceeded, or the concentration can be notified for each organic substance classified by boiling point.

By the way, the intrusion of chemical pollutants into the housing 11 is not limited to the intrusion due to the deterioration of the chemical filter 37 with time, but the intrusion from the seam or gap of the enclosure wall of the housing 11, and the cassette port 12 being carried in the cassette. There are intrusion from the outlet 14, intrusion from the maintenance port 19 a of the standby chamber 19, and the like. Therefore, it is desirable to automatically monitor changes in the amount of chemical contaminants in the cassette port 12, the cassette transfer device installation chamber 16, and the standby chamber 19.

Therefore, in the CVD apparatus 10 according to the present embodiment, the chemical contaminant inspection apparatus 60 is installed in the vicinity of the outlet of the second clean unit 45, in the lower part of the cassette transfer apparatus installation room 16, and in the lower part of the standby room 19, respectively. ing. Since these chemical contaminant inspection devices 60 can inspect the amount of chemical contaminants in the cassette port 12, cassette transfer device installation chamber 16, and standby chamber 19, the contamination of the wafer 1 due to the chemical contaminants that have entered them. It is possible to prevent a decrease in yield in the IC manufacturing method. In addition, since the effect | action of these chemical contaminant inspection apparatuses 60 is the same as that of the chemical contaminant inspection apparatus 60 installed in the duct 33 mentioned above, detailed description is abbreviate | omitted.

In addition, this invention is not limited to the said embodiment, It cannot be overemphasized that it can change into a kind in the range which does not deviate from the summary. For example, in the embodiment of the present invention, the temperature controller 74 used for controlling the temperature of the vibrator and the control unit 78 and the controller 79 used for calculating the amount and concentration of the organic substance are separately configured. You may perform by a control apparatus.

In the embodiment, the characteristic of fA (T) is stored in advance in the storage unit 78b. However, as shown in FIG. 6, the fA (T) is provided from a vibrator with a lid provided separately from the vibrator to be exposed. The characteristic of T) may be acquired.

In the above-described embodiment, the case where the chemical pollutant inspection device is installed for each sampling port of the atmosphere inside the casing has been described. However, the chemical pollutant testing device may be shared by a plurality of sampling ports.

In the above embodiment, the case of a batch type vertical CVD apparatus has been described. However, the present invention is not limited to this, and a heat treatment apparatus (furnace) such as a batch type vertical diffusion apparatus, a single wafer diffusion / CVD apparatus, or an annealing apparatus. And can be applied to all substrate processing apparatuses such as single-wafer plasma CVD apparatuses.

It is side surface sectional drawing which shows the CVD apparatus which is one Embodiment of this invention. It is a partially omitted perspective view showing the flow of the clean air. It is a schematic diagram which shows the chemical pollutant inspection apparatus used in this invention. It is a figure which shows the relationship between heating temperature and time with respect to a quartz oscillator. It is a figure which shows the classification | category by the heating temperature of a crystal oscillator, and the boiling point of organic substance. It is a schematic diagram which shows the chemical pollutant inspection apparatus of another form used in this invention.

Explanation of symbols

1 Wafer (substrate)
10 CVD equipment (substrate processing equipment)
DESCRIPTION OF SYMBOLS 11 Case 25 Processing chamber 26 Process tube 60 Chemical contaminant inspection apparatus 68 Sealed container 69 Sealed chamber 70, 73 Temperature controller 74 Temperature controller 75 Crystal oscillator 77 Vibration detection part 78 Chemical pollutant amount control part 79 Controller

Claims (3)

A housing that houses a process tube that forms a processing chamber for processing a substrate;
A vibrator that is installed inside the housing and exposed to the atmosphere inside the housing;
Heating means for heating the vibrator;
A detector for detecting an oscillation frequency of the vibrator;
First control means for controlling the heating means so as to raise the temperature of the vibrator stepwise;
By detecting the oscillation frequency of the vibrator in each stage from the detection unit,
A second control means for controlling to calculate the amounts or / and concentrations of a plurality of types of organic substances having different boiling points,
A substrate processing apparatus. The substrate processing apparatus according to claim 1, wherein the vibrator is a QCM. Exposing the vibrator provided in the housing to the atmosphere in the housing;
Increasing the temperature of the vibrator in stages, and detecting the oscillation frequency of the vibrator in each stage;
From the detected result, calculating the amount or / and concentration of a plurality of types of organic substances having different boiling points;
Carrying a substrate into a processing chamber provided in the housing;
Processing the substrate in the reactor;
And a step of carrying out the processed substrate from the inside of the reaction furnace.

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