JP2005142274A - Method of forming pattern and method of manufacturing electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of forming pattern by which the manufacturing efficiency of a pattern can be improved, and to provide a method of manufacturing electronic device. <P>SOLUTION: The method of forming pattern includes a first process of forming a contact-angle changeable film 11 which can be changed in the contact angle with a liquid, a second process of forming a prescribed pattern composed of liquid repellent areas 11b and a lyophilic area 11a by forming the liquid repellent areas 11b having large contact angles by changing the contact angle of the contact-angle changeable film 11 by heating, and a third process of applying a first functional fluid 12L to the lyophilic area 11a and solidifying the fluid 12L. The method also includes a fourth process of relieving the liquid repellent properties of the liquid repellent areas 11b by reducing the contact angles of the areas 11b by bringing a contact-angle control material 13L into contact with the areas 11b and heating the material 13L, and a fifth process of applying a second function fluid to the liquid repellent property-relieved areas and solidifying the fluid. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a pattern forming method and an electronic device manufacturing method.

The following methods are known as conventional multilayer wiring forming methods, in particular, the method of conducting the lower layer wiring and the upper layer wiring in the multilayer wiring in which the lower layer wiring, the interlayer insulating film, and the upper layer wiring are laminated in this order. ing.
In this method, first, a through hole is formed in an interlayer insulating film formed on a lower layer wiring. Then, an Al-based metal is deposited on the interlayer insulating film by sputtering and patterned to form an upper layer wiring that is electrically connected to the lower layer wiring through the through hole.

However, in the above method, when the wiring pattern to be formed is miniaturized, the diameter of the through hole is reduced, and the aspect ratio that is the ratio of the depth and the diameter of the through hole is increased. As a result, a region where Al-based metal is difficult to be sputter-deposited is generated around the bottom surface of the through hole, and there is a fear that the conduction between the lower layer wiring and the upper layer wiring cannot be secured. Therefore, various techniques have been proposed to improve the reliability of multilayer wiring (see, for example, Patent Document 1).
JP-A-5-102314

In the above-mentioned Patent Document 1, a contact pillar wiring electrically connected to the upper wiring layer is formed in the lower wiring layer, an interlayer insulating film is formed on the lower wiring layer including the pillar wiring, The upper surface of the pillar was exposed while planarizing the upper surface of the interlayer insulating film by CMP (Chemical Mechanical Polishing).
However, in this method, a complicated process such as CMP is indispensable, and the interlayer insulating layer once formed must be scraped, resulting in a problem that the manufacturing efficiency is not good.

  SUMMARY An advantage of some aspects of the invention is that it provides a pattern forming method and an electronic device manufacturing method that can improve manufacturing efficiency.

  In order to achieve the above object, the pattern forming method of the present invention includes a first step of forming a contact angle variable film capable of changing a contact angle with a liquid on a surface to be processed, and a contact angle of the contact angle variable film. Is changed by heating to form a liquid repellent area having a large contact angle, thereby forming a predetermined pattern consisting of the liquid repellent area and the lyophilic area, and applying the first functional liquid to the lyophilic area. The third step of solidification, the fourth step of reducing the liquid repellency by reducing the contact angle of the liquid repellent region by bringing the contact angle control material into contact with the liquid repellent region and heating, and the liquid repellency relaxed And a fifth step of applying and solidifying the second functional liquid to the formed region.

That is, in the pattern forming method of the present invention, the first functional liquid and the second functional liquid are applied to different patterns (liquid self) on the surface to be processed by using the contact angle variable film formed on the surface to be processed. Patterning) and can be solidified to form a layer with a flat surface.
That is, in the pattern forming method of the present invention, first, the first functional liquid is solidified by applying and solidifying the first functional liquid in the lyophilic area of the contact angle variable film and the lyophilic area. Form. Then, the liquid repellency of the liquid repellent area is relaxed, and the second functional liquid is applied to the area and solidified to form a solidified layer of the second functional liquid. As a result, by using the contact angle variable film, it is possible to form a layer in which the first functional liquid in a predetermined pattern is solidified and a layer in which the second functional liquid occupying the other region is solidified. Further, the upper surface of the layer in which the first functional liquid is solidified and the layer in which the second functional liquid is solidified can be formed flat without using a grinding process such as CMP, and the manufacturing efficiency can be improved.

In order to realize the above configuration, more specifically, the solidification of the first functional liquid in the third step may be performed by heating, and the heating in the fourth step may also serve as the heating in the third step.
According to this configuration, since the heating in the fourth step also serves as the heating in the third step, the manufacturing steps can be reduced and the manufacturing efficiency can be improved.

In order to realize the above configuration, more specifically, the heating in the second step and the heating in the fourth step may be heating performed by laser irradiation.
According to this configuration, since the heating in the second step and the fourth step is performed by laser irradiation, the heating can be performed without contact with the contact angle variable film. Therefore, it is possible to prevent damage caused by contact with the surface to be processed and the contact angle variable film.

In order to realize the above configuration, more specifically, the liquid repellent treatment may be performed on the surface of the solidified first functional liquid layer.
According to this configuration, since the surface of the solidified first functional liquid layer is subjected to the liquid repellent treatment, when the second functional liquid is applied in the fifth step, the second functional liquid is the first functional liquid layer. It is not applied on top.

In order to realize the above configuration, more specifically, at least one of the first functional liquid and the second functional liquid may include a conductive material.
According to this configuration, when at least one of the first functional liquid and the second functional liquid includes the conductive material, for example, wiring is applied to the surface to be processed, and the first functional liquid and the second functional liquid are solidified. If wiring is applied on the layer, electrical connection between these two wirings can be achieved.

In order to realize the above configuration, more specifically, in the second step, the lyophilic region may be formed by removing the contact angle variable film.
According to this configuration, by removing the contact angle variable film in the lyophilic area, the first functional liquid can be applied (liquid self patterning) to the lyophilic area.
Further, for example, when a wiring is formed on the surface to be processed and the first functional liquid contains a conductive material, it is possible to improve the conductivity between the wiring and the layer in which the first functional liquid is solidified.

An electronic device manufacturing method of the present invention is characterized by using the pattern forming method of the present invention.
That is, since the manufacturing method of the electronic device of the present invention uses the pattern forming method of the present invention, the manufacturing efficiency related to pattern formation such as wiring on the substrate is improved, and consequently the manufacturing efficiency of the electronic device is improved. be able to.

Hereinafter, a pattern forming method and an electronic device manufacturing method according to the present invention will be described with reference to the drawings.
In addition, in order to make each layer and each member large enough to be recognized on the drawing, the scale of each layer and each member is shown differently from the actual one.

Hereinafter, a pattern forming method according to the present invention will be described.
1 to 3 are schematic cross-sectional views of a substrate in main steps of the pattern forming method according to the present embodiment.
As shown in FIG. 1A, a substrate 10 is an object on which a pattern of this embodiment is formed. For example, a multilayer wiring board in which a plurality of conductive films and insulating films are laminated in advance, a wiring layer, or an interlayer A circuit board or the like on which an insulating film is formed in advance. The material of the substrate 10 is selected according to the purpose of use. For example, a transparent material such as glass is selected when light transmittance is required, and a resin material is selected when flexibility is required. In the case of forming a semiconductor element, a silicon wafer is selected.

  Next, the pattern forming method of this embodiment includes a contact angle variable film forming step (first step), a liquid repellent treatment step (second step), a conductive layer forming step (third step), and a liquid repellent. It is roughly composed of a property relaxation treatment step (fourth step) and an interlayer insulating layer formation step (fifth step). Next, each process will be described, and a method and apparatus used in each process will be described.

(Contact angle variable film formation process)
In the contact angle variable film forming step, as shown in FIG. 1B, the contact angle variable film 11 is formed by applying a contact angle variable liquid 11L containing an organic compound having a hydrophobic group on the substrate 10. .
As a method for applying the contact angle variable liquid 11L, a spin coating method, a dip coating method, a spray film forming method, a slit coating method, a printing method, a liquid discharge method, or the like can be used. The organic compound having a hydrophobic group contained in the variable contact angle liquid 11L includes (1) a compound having a hydrophobic group bonded to a side chain of the polymer by a bonding group, and (2) a polymer polymer. In order from the end to the side chain, a hydrophobic group, a molecular chain having a self-aggregating or planar structure, a binding group bonded, (3) a compound having a hydrophobic group on the surface of an organic or inorganic material, physical or scientific And (4) a compound having a hydrophobic group, and the like. Examples of the hydrophobic group include those in which —CH ₃ , —CF ₃ , —CF ₂ H, —CFH ₂ , —C (CF ₃ ) ₃ , —C (CH ₃ ) _{3 and the} like are arranged at the end of the molecule. can do.
The contact angle variable film 11 needs to be formed thinner than the film thickness of an interlayer insulating layer 14 described later, and is preferably formed within a range having the function.
The contact angle variable film 11 may be formed as a coating film as described above, but may be disposed on the substrate 10 after the film-like contact angle variable film 11 is formed in a separate process.

(Liquid repellency treatment process)
In the lyophobic treatment step, as shown in FIG. 1C, the lyophobic region 11b of the contact angle variable film 11 is irradiated with laser in the air and heated to increase the contact angle of the contact angle variable film 11. Is done. At this time, the region not irradiated with the laser is the lyophilic region 11a having a smaller contact angle than the lyophobic region.
The laser irradiation to the liquid repellent area 11b may be performed by arranging a mask in which the pattern of the liquid repellent area 11b is formed between the laser irradiation apparatus and the substrate 10, or irradiation with a laser beam with a narrowed irradiation area. However, the laser irradiation apparatus 11 and the substrate 10 may be moved relative to each other to irradiate the liquid repellent region 11b with the laser.
When the contact angle variable film 11 is heated in the air, the molecular motion of the organic compound having a hydrophobic group therein becomes active, and the hydrophobic group is oriented toward the hydrophobic atmosphere side (air side). Therefore, in the contact angle variable film 11 heated in the air, the hydrophobic group is oriented to the air side, and as a result, the liquid repellent region 11a has a low surface energy and a large contact angle with the liquid.
The method of heating the lyophobic region may be the above-described laser irradiation method, but may be heated by bringing a heater, a thermal head, or the like into contact with the substrate 10, or using infrared rays, light, electron beams, etc. instead of a laser. Irradiation and heating may be used, and various heating methods can be used.
In this step, the lyophilic region 11a may not be processed as described above, but the contact angle variable film 11 in the lyophilic region 11a may be removed. By removing the contact angle variable film 11 in the lyophilic region 11a, the conductivity between the substrate 10 and a conductive layer 12 described later can be improved.

(Conductive layer formation process)
In the conductive layer forming step, as shown in FIG. 2A, a liquid conductive material (first functional liquid) 12L is applied on the lyophilic region 11a formed in the previous step, as shown in FIG. Then, the conductive layer (plug) 12 is formed by heating, drying, and sintering (solidifying). As the liquid conductive material 12L, for example, a material in which metal fine particles are dispersed in a dispersion medium can be used, and a material in which Cu fine particles, Au fine particles, Ag fine particles, etc. are dispersed in a dispersion medium such as toluene can be exemplified. . As a method for applying the liquid conductive material 12L, a spin coating method, a dip coating method, a spray film forming method, a slit coating method, a printing method, a liquid discharge method, or the like can be used.
As shown in FIG. 2A, when the liquid conductive material 12L is applied on the contact angle variable film 11, the liquid conductive material 12L is formed on the liquid repellent region 11b due to a difference in contact angle between the liquid repellent region 11b and the lyophilic region 11a. It remains on the lyophilic region 11a and is subjected to liquid self-patterning. As shown in FIG. 2B, the liquid conductive material 12L applied on the lyophilic region 11a is then heated and dried by laser irradiation, whereby the dispersion medium evaporates and the metal fine particles remain on the lyophilic region 11a. The conductive layer 12 is formed by being deposited and sintered.

  Note that various methods can be used as a heating method for drying and solidifying the liquid conductive material 12L. For example, a method of heating by irradiating a laser or infrared rays may be used, or a heater or a thermal head may be attached to the substrate 10. A method of heating by contacting may be used. Moreover, you may perform this heating process simultaneously with the heating in the liquid-repellent relaxation process mentioned later. In this case, since the two heating steps can be combined into one heating step, the number of steps can be reduced.

(Liquid repellency relaxation treatment process)
In the liquid repellency relaxation treatment step, as shown in FIG. 2 (c), the contact angle control material 13L is brought into contact with the liquid repellent area 11b, the liquid repellent area 11b is heated by laser irradiation, and the contact angle of the liquid repellent area 11b. Is reduced.
As the contact angle control material 13L, liquid, vapor, or solid that is liquefied by heating by laser irradiation can be used. Specifically, the liquid includes water, an aqueous solution containing an electrolyte, an alcohol such as ethanol and n-butanol, a polyhydric alcohol such as glycerin and ethylene glycol, a polar liquid such as a ketone such as methyl ethyl ketone, and n- Nonpolar liquids such as linear hydrocarbons such as nonane and n-octane, cyclic hydrocarbons such as cyclohexane, and aromatic hydrocarbons such as m-xylene and benzene can be exemplified. Examples of the vapor include the above-described liquid vapor such as water vapor. Examples of the solid include higher aliphatic, low molecular weight polyethylene, polymer gel (polyacrylamide gel, polyvinyl alcohol gel), silica gel, and a compound containing crystal water.

When the contact angle variable film 11 is heated while being in contact with the contact angle control material 13L, the molecular motion of the organic compound having a hydrophobic group therein becomes active. The organic compound in which the molecular motion became active was affected by the contact angle control material 13L, and the orientation (alignment) of at least a part of the organic substance on the surface of the contact angle variable film 11 was in a different orientation state or orientation. It becomes a state. Even after the heating of the contact angle variable film 11 is finished and the temperature is lowered, the change in the orientation of the organic substance is maintained.
The above-described change in the arrangement of the organic substances leads to an increase in surface energy on the surface of the contact angle variable film 11, and the contact angle decreases. That is, the liquid repellent state is relaxed.

The heating temperature is preferably in the range of 50 ° C. to 250 ° C., and the heating time is preferably in the range of about 0.1 milliseconds to 1 second. As for the timing of heating, in the state where the contact angle control material 13L is in contact with the liquid repellent region 11b as described above, it may be heated by laser irradiation, or while the liquid repellent region 11b is heated by laser irradiation, The contact angle control material 13L may be brought into contact with the liquid repellent region 11b.
The liquid repellent region 11b may be heated by laser irradiation as described above, or may be a method in which a heater, a thermal head, or the like is brought into contact with the substrate 10 for heating, or light such as infrared rays or electrons instead of laser. It may be heated by irradiating a line, and various heating methods can be used. Moreover, you may perform simultaneously, combining this heating process and the heating process of the conductive layer formation process mentioned above.
In this step, a liquid repellent treatment may be performed on the upper surface of the formed conductive layer 12. As the liquid repellent treatment, the method of forming the contact angle variable film 11 described above may be used, or another liquid repellent treatment method may be used. By performing this liquid repellent treatment, it is possible to prevent an interlayer insulating layer from being formed on the conductive layer 12 when an interlayer insulating layer described later is formed.

(Interlayer insulation layer formation process)
In the interlayer insulating layer forming step, as shown in FIG. 3A, a liquid insulating material (second functional liquid) 14L is applied to the liquid repellent region 11b whose liquid repellency has been relaxed in the liquid repellent relaxation treatment step. As shown in FIG. 3B, the interlayer insulating layer 14 is formed by heating and drying and solidifying the liquid insulating material 14L by laser irradiation.
As shown in FIG. 3A, when the liquid insulating material 14L is applied onto the contact angle variable film 11, the liquid repellency of the liquid repellent region 11b is relaxed. It is applied on the region 11b. Further, as described above, if the upper surface of the conductive layer 12 is subjected to a liquid repellency treatment in the conductive layer forming step, the liquid insulating material 14L is not applied on the conductive layer 12.
As the liquid insulating material 14L, for example, a coating liquid for forming a silica-based insulating film containing polysilazane or the like can be used. As a method for applying the liquid insulating material 14L, a spin coating method, a dip coating method, a spray film forming method, a slit coating method, a printing method, a liquid discharge method, or the like can be used.

  According to the above process, the layer having different patterns of the conductive layer 12 and the interlayer insulating layer 14 can be formed on the contact angle variable film 11 using the single contact angle variable film 11. Further, the upper surfaces of the conductive layer 12 and the interlayer insulating layer 14 can be formed flat without using a grinding process such as CMP, and the manufacturing efficiency can be improved. Furthermore, even when the aspect ratio, which is the ratio of the height and width of the conductive layer 12, increases, the conduction between the conductive layer 12 and the substrate 10 can be maintained.

  Since the heating in the liquid repellency treatment step and the liquid repellency relaxation treatment step is performed by laser irradiation, the contact angle variable film 11 can be heated without contacting. Therefore, damage caused by contact with the substrate 10 or the contact angle variable film 11 can be prevented.

Next, an example of an electronic device manufactured using the pattern forming method according to the above embodiment will be described.
FIG. 4 is a cross-sectional view of the liquid crystal display device manufactured by the pattern forming method according to the present embodiment.
As shown in FIG. 4, in the liquid crystal display device (electronic device) 100, the TFT array substrate (substrate) 40 and the counter substrate 20 are bonded together by a sealing material, and the liquid crystal 50 is enclosed in a region partitioned by the sealing material. Is retained.

The TFT array substrate 40 includes a glass substrate 40A made of a light-transmissive insulating substrate such as quartz, and a pixel electrode formed on the surface of the liquid crystal layer 50 and made of a transparent conductive film such as an ITO (Indium Tin Oxide) film. 9a, a pixel switching TFT (switching element) 30 provided in the display area, a drive circuit TFT (switching element) (not shown) provided in the non-display area, and an organic film such as a polyimide film. And an alignment film 16 that has been subjected to a predetermined alignment process such as a rubbing process.
The counter substrate 20 includes a substrate body 20A made of a transparent substrate such as transparent glass or quartz, a counter electrode 21 formed on the surface of the liquid crystal layer 50, an alignment film 22, a metal, and the like. It is mainly composed of a light shielding film 23 provided in an area other than the opening area of the pixel portion.

  As shown in FIG. 4, a light shielding layer 41 a is provided on the surface of the TFT array substrate 40 on the liquid crystal layer 50 side of the substrate body 40 </ b> A at a position corresponding to each pixel switching TFT 30. A first interlayer insulating film 42 is provided between the light shielding layer 41 a and the pixel switching TFT 30. The first interlayer insulating film 42 is provided to electrically insulate the semiconductor layer 1a constituting the pixel switching TFT 30 from the light shielding layer 41a.

The pixel switching TFT 30 has an LDD (Lightly Doped Drain) structure, and insulates the channel region 1a ′ of the semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a, the scanning line 3a, and the semiconductor layer 1a. A gate insulating film 2, a data line 6a, a low concentration source region 1b and a low concentration drain region 1c of the semiconductor layer 1a, a high concentration source region (source region) 1d and a high concentration drain region 1e (drain region) of the semiconductor layer 1a. I have.
Further, in this liquid crystal panel, the gate insulating film 2 is extended from a position facing the scanning line 3a to be used as a dielectric film, the semiconductor film 1a is extended to be the first storage capacitor electrode 1f, and these A storage capacitor 70 is configured by using a part of the capacitor line 3b facing the second storage capacitor electrode as a second storage capacitor electrode.

The pattern forming method of the present invention can be used for the TFT array substrate 40 of the liquid crystal display device 100 configured as described above. For example, the pattern forming method of the present invention described above can be used to form a configuration for achieving electrical connection between the light shielding layer 41a and the capacitor line 3b.
That is, a contact angle variable film is formed on the glass substrate 40A on which the light shielding layer 41a is formed, and the area other than the area in contact with the capacitance line 3b of the contact angle variable film is heated in the air to form a liquid repellent area, and the capacitance line 3b The area in contact with the lyophilic area is defined as the lyophilic area. A liquid conductive material containing the material of the capacity line 3b is applied to the lyophilic region and sintered to form a portion corresponding to the plug of the capacity line 3b. Thereafter, the liquid repellent state of the liquid repellent region is relaxed, and a liquid insulating material containing the material of the first interlayer insulating film 42 is applied to the liquid repellent region and solidified to form the first interlayer insulating film 42.

  By using the pattern forming method of the present invention, electrical connection between the light shielding layer 41a and the capacitor line 3b can be reliably performed. In addition, the upper surface of the first interlayer insulating film 42 can be formed flat without using a grinding process such as CMP. Therefore, the formation of the pixel switching TFT 30 and the formation of the remaining portion of the capacitor line 3b can be performed without extra steps, and the manufacturing efficiency of the liquid crystal display device 100 can be improved.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, the present invention has been described as being applied to a liquid crystal display device. However, the present invention is not limited to a liquid crystal display device, and other various laminated wirings such as an electroluminescence display device are used. It can be adapted to the device.

It is process drawing of the formation method of the pattern which concerns on this invention. It is process drawing of the formation method of the pattern which concerns on this invention. It is process drawing of the formation method of the pattern which concerns on this invention. It is a figure which shows an example of the electronic device manufactured with the formation method of the pattern of this invention.

Explanation of symbols

11 ... Contact angle variable film, 11a ... Liquid region, 11b ... Liquid repellent region, 12L ... Liquid conductive material (first functional liquid), 13L ... Contact angle control material, 14L ..Liquid insulation (second functional liquid)

Claims (7)

A first step of forming a contact angle variable film capable of changing a contact angle with a liquid on a surface to be treated;
Changing the contact angle of the contact angle variable film by heating to form a liquid repellent region having a large contact angle, thereby forming a predetermined pattern comprising a liquid repellent region and a lyophilic region;
A third step of applying and solidifying the first functional liquid in the lyophilic region;
A fourth step of relaxing the liquid repellency by reducing the contact angle of the liquid repellent area by bringing a contact angle control material into contact with the liquid repellent area and heating;
A fifth step of applying and solidifying the second functional liquid in the region where the liquid repellency is relaxed;
A pattern forming method characterized by comprising: Solidification of the first functional liquid in the third step is performed by heating,
The pattern forming method according to claim 1, wherein the heating in the fourth step also serves as the heating in the third step.   The pattern forming method according to claim 1 or 2, wherein the heating in the second step and the heating in the fourth step are heating performed by laser irradiation.   The pattern forming method according to claim 1, wherein a liquid repellent treatment is performed on a surface of the solidified first functional liquid layer.   The pattern forming method according to claim 1, wherein at least one of the first functional liquid and the second functional liquid contains a conductive material.   6. The pattern forming method according to claim 1, wherein, in the second step, the lyophilic region is formed by removing the contact angle variable film.   An electronic device manufacturing method using the pattern forming method according to claim 1.

Images