JP2005142194A - Light emitting diode and its manufacturing method - Google Patents

Light emitting diode and its manufacturing method Download PDF

Info

Publication number
JP2005142194A
JP2005142194A JP2003374139A JP2003374139A JP2005142194A JP 2005142194 A JP2005142194 A JP 2005142194A JP 2003374139 A JP2003374139 A JP 2003374139A JP 2003374139 A JP2003374139 A JP 2003374139A JP 2005142194 A JP2005142194 A JP 2005142194A
Authority
JP
Japan
Prior art keywords
light emitting
resin layer
semiconductor light
phosphor
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003374139A
Other languages
Japanese (ja)
Other versions
JP4300980B2 (en
Inventor
Kazuhiro Ishibashi
和博 石橋
Koji Otomo
晃治 大友
Masami Nei
正美 根井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2003374139A priority Critical patent/JP4300980B2/en
Publication of JP2005142194A publication Critical patent/JP2005142194A/en
Application granted granted Critical
Publication of JP4300980B2 publication Critical patent/JP4300980B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting diode formed to be thin, and capable of obtaining determined chromaticity and being simply manufactured, and to provide its manufacturing method. <P>SOLUTION: The light emitting diode 1 includes a semiconductor light emitting device 4 formed by mounting a semiconductor light emitting element 10 on a sub-mount element 9 and covering the element 10 with a first resin layer 5a containing a fluorescent material 12a, and a substrate 2 having the semiconductor light emitting device 4 mounted on the bottom face 6 in a recess 20. The side face of the first resin layer 5a in the recess 20 is covered with a second resin layer 5b containing the fluorescent material 12. Since light emitted on the side of a surface 7 passes through the surface side of the first resin layer 5a, and light emitted sideward passes through the side face of the first resin layer 5a and the second resin layer 5b; the quantity of the fluorescent material 12 excited by the light emitted sideward increases, thereby shifting the chromaticity of the light emitted sideward toward the side of a light emitting color of fluorescent materials 12 and 12a. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、半導体発光装置を樹脂層で覆って形成した発光ダイオードに関する。   The present invention relates to a light emitting diode formed by covering a semiconductor light emitting device with a resin layer.

従来より、半導体発光装置の周囲を、蛍光体を含む樹脂層で覆い、半導体発光装置から出射される紫外光や可視光によって、蛍光体を励起（低いエネルギー状態から高いエネルギー状態へ電子の軌道が変わること）させて発光させる方式の発光ダイオードが知られている（例えば、特許文献１参照）。   Conventionally, the periphery of a semiconductor light emitting device is covered with a resin layer containing a phosphor, and the phosphor is excited by ultraviolet light or visible light emitted from the semiconductor light emitting device (electron trajectory from a low energy state to a high energy state). There is known a light emitting diode that emits light by changing (see, for example, Patent Document 1).

特許文献１では、基板の表面に搭載した半導体発光装置を覆うように、下方に開口した金型を密閉状態で被せて、この中に蛍光体を混入させた樹脂を充填し、蛍光体が樹脂層の下側（基板側）に溜まるように構成して、基板実装型の発光ダイオードを製造している。
特開２０００−１２４５０７号公報 （第２−３、６頁、第９−１０、３４、３７−３８図） In Patent Document 1, a die opened downward is hermetically sealed so as to cover a semiconductor light emitting device mounted on the surface of a substrate, and a resin mixed with a phosphor is filled therein, and the phosphor is a resin. A substrate-mounted light emitting diode is manufactured by being configured to accumulate below the layer (substrate side).
JP 2000-124507 A (2-3, 6 pages, 9-10, 34, 37-38)

しかしながら、発光ダイオードは、近年小型化が要求されており、蛍光体で半導体発光装置を均一な厚みで覆うように形成することができなくなってきている。特に、側面の厚みが薄くなることが多くなり、このような場合には、上面から出射される光と側面から出射される光とが、異なる色調の光となるという問題がある。   However, in recent years, light-emitting diodes have been required to be miniaturized, and it has become impossible to form a semiconductor light-emitting device with a uniform thickness with a phosphor. In particular, the thickness of the side surface is often reduced. In such a case, there is a problem that the light emitted from the upper surface and the light emitted from the side surface have different colors.

そこで本発明は、小型化するとともに所定の色度を得ることができる発光ダイオードおよびその製造方法を提供することを目的とする。   Therefore, an object of the present invention is to provide a light emitting diode that can be reduced in size and obtain a predetermined chromaticity, and a method for manufacturing the same.

本発明の発光ダイオードにおいては、基材の凹部内の半導体発光装置の周囲に樹脂層を形成し、凹部内の第１の樹脂層の側面を、蛍光体を含む第２の樹脂層で覆った発光ダイオードとしたものである。   In the light emitting diode of the present invention, a resin layer is formed around the semiconductor light emitting device in the recess of the base material, and the side surface of the first resin layer in the recess is covered with the second resin layer containing the phosphor. It is a light emitting diode.

この発明によれば、小型化するとともに所定の色度を得ることができる発光ダイオードおよびその製造方法が得られる。   According to the present invention, it is possible to obtain a light emitting diode that can be reduced in size and obtain a predetermined chromaticity and a method for manufacturing the same.

本発明の発光ダイオードによれば、サブマウント素子上に第１の樹脂層で覆われた半導体発光素子を搭載した半導体発光装置と、この半導体発光装置を、凹部内の底面に搭載した基材とを備えた発光ダイオードにおいて、凹部内の第１の樹脂層の側面を、蛍光体を含む第２の樹脂層で覆うので、側方に出射される光により励起される蛍光体の量が増え、側方に出射される光の色度が、蛍光体の発光色側に移動することになり、装置を小型化するとともに所定の色度を得ることができる。   According to the light-emitting diode of the present invention, a semiconductor light-emitting device in which a semiconductor light-emitting element covered with a first resin layer is mounted on a submount element, and a substrate on which the semiconductor light-emitting device is mounted on the bottom surface in the recess, The side surface of the first resin layer in the recess is covered with the second resin layer containing the phosphor, so that the amount of the phosphor excited by the light emitted to the side increases, The chromaticity of the light emitted to the side moves to the emission color side of the phosphor, so that the apparatus can be miniaturized and a predetermined chromaticity can be obtained.

基材、第１の樹脂層および第２の樹脂層の表面に、透光性樹脂からなるレンズを形成すると、半導体発光装置から出射される光を、第１、第２の樹脂層によって色度を均一に調整してから集光することができ、色むらを無くすとともに所定の色度の光の光度を向上させることができる。   When a lens made of a translucent resin is formed on the surfaces of the base material, the first resin layer, and the second resin layer, the light emitted from the semiconductor light emitting device is chromatically transmitted by the first and second resin layers. Can be condensed after uniform adjustment, eliminating unevenness in color and improving the luminous intensity of light of a predetermined chromaticity.

本発明の発光ダイオードの製造方法は、蛍光体が混入されたペースト材料を半導体発光素子に印刷して硬化させ、半導体発光素子を覆う第１の樹脂層を形成する印刷工程と、半導体発光装置が搭載された凹部に、蛍光体が混入された液状充填剤を滴下して硬化させ、第１の樹脂層の側面を覆う第２の樹脂層を形成するポッティング工程とを備えているので、印刷工程において半導体発光素子の表面側から出射される光の色度を調整し、ポッティング工程において半導体発光素子の側方に出射される光の色度を調整できるので、所定の色度を得ることができる。   The method for manufacturing a light emitting diode according to the present invention includes a printing process in which a paste material mixed with a phosphor is printed on a semiconductor light emitting element and cured to form a first resin layer covering the semiconductor light emitting element, and the semiconductor light emitting device includes: And a potting step of forming a second resin layer covering the side surface of the first resin layer by dripping and curing the liquid filler mixed with the phosphor in the mounted recess, so that the printing step In the potting process, the chromaticity of light emitted from the surface side of the semiconductor light emitting element can be adjusted, and in the potting process, the chromaticity of light emitted to the side of the semiconductor light emitting element can be adjusted, so that a predetermined chromaticity can be obtained. .

請求項１に記載の発明は、サブマウント素子上に半導体発光素子を搭載し、この半導体発光素子を蛍光体を含んだ第１の樹脂層で覆って形成した半導体発光装置と、この半導体発光装置を、凹部内の底面に搭載した基材とを備えた発光ダイオードにおいて、前記凹部内の前記第１の樹脂層の側面は、蛍光体を含む第２の樹脂層で覆われていることを特徴とする発光ダイオードとしたものであり、表面側に出射される光は第１の樹脂層の表面側を通過し、側方に出射される光は第１の樹脂層の側面および第２の樹脂層を通過するので、側方に出射される光により励起される蛍光体の量が増え、側方に出射される光の色度が、蛍光体の発光色側に移動するという作用を有する。   According to a first aspect of the present invention, there is provided a semiconductor light emitting device in which a semiconductor light emitting element is mounted on a submount element and the semiconductor light emitting element is covered with a first resin layer containing a phosphor, and the semiconductor light emitting device And a base material mounted on the bottom surface in the recess, the side surface of the first resin layer in the recess is covered with a second resin layer containing a phosphor. The light emitted to the surface side passes through the surface side of the first resin layer, and the light emitted to the side is the side surface of the first resin layer and the second resin. Since it passes through the layers, the amount of the phosphor excited by the light emitted to the side increases, and the chromaticity of the light emitted to the side moves to the emission color side of the phosphor.

なお、基材には、基板やリードフレームを含む。また、凹部の形状は、半導体発光装置を搭載できる底面を備えた非貫通孔であればよく、断面形状が溝形の他、Ｕ字状、円弧状、台形状、Ｖ字状のものも含まれる。   The base material includes a substrate and a lead frame. The shape of the recess may be a non-through hole with a bottom surface on which the semiconductor light emitting device can be mounted, and includes a U-shaped, arc-shaped, trapezoidal, and V-shaped cross section in addition to the groove shape. It is.

請求項２に記載の発明は、前記基材、前記第１の樹脂層および第２の樹脂層の表面には、透光性樹脂からなるレンズが形成されていることを特徴とする請求項１に記載の発光ダイオードとしたものであり、半導体発光装置から出射される光を、第１、第２の樹脂層によって色度を均一に調整してから集光するという作用を有する。   The invention described in claim 2 is characterized in that a lens made of a translucent resin is formed on the surfaces of the base material, the first resin layer, and the second resin layer. The light-emitting diode described in 1) has a function of condensing light emitted from the semiconductor light-emitting device after the chromaticity is uniformly adjusted by the first and second resin layers.

請求項３に記載の発明は、サブマウント素子上に半導体発光素子を搭載し、この半導体発光素子を蛍光体を含んだ第１の樹脂層で覆って形成した半導体発光装置と、この半導体発光装置を、凹部内の底面に搭載した基材とを備えた発光ダイオードの製造方法において、蛍光体が混入されたペースト材料を半導体発光素子に印刷して硬化させ、前記半導体発光素子を覆う第１の樹脂層を形成する印刷工程と、前記半導体発光装置が搭載された凹部に、蛍光体が混入された液状充填剤を滴下して硬化させ、前記第１の樹脂層の側面を覆う第２の樹脂層を形成するポッティング工程とを備えたことを特徴とする発光ダイオードの製造方法としたものであり、印刷工程において印刷厚みを薄くまたは厚く調整することにより、半導体発光素子の表面側から出射される光の色度を、半導体発光装置による発光色側、または蛍光体の発光色側に近づけ、ポッティング工程で使用する第２の蛍光体中の濃度を低くまたは高くすることにより、半導体発光素子の側方に出射される光の色度を、半導体発光装置による発光色側、または蛍光体の発光色側に近づけることができる。   According to a third aspect of the present invention, there is provided a semiconductor light emitting device in which a semiconductor light emitting element is mounted on a submount element and the semiconductor light emitting element is covered with a first resin layer containing a phosphor, and the semiconductor light emitting device In a method for manufacturing a light emitting diode comprising a base material mounted on the bottom surface in the recess, a paste material mixed with a phosphor is printed on a semiconductor light emitting element and cured to cover the semiconductor light emitting element. A printing process for forming a resin layer, and a second resin that covers the side surface of the first resin layer by dripping and curing a liquid filler mixed with a phosphor in a recess in which the semiconductor light emitting device is mounted. And a potting process for forming a layer, and a method for manufacturing a light emitting diode, wherein a surface thickness of a semiconductor light emitting element is adjusted by adjusting a printing thickness to be thinner or thicker in a printing process. By making the chromaticity of the light emitted from the semiconductor light emitting device closer to the light emitting color side of the semiconductor light emitting device or the light emitting color side of the phosphor, the concentration in the second phosphor used in the potting process is reduced or increased. The chromaticity of the light emitted to the side of the light emitting element can be close to the light emission color side of the semiconductor light emitting device or the light emission color side of the phosphor.

以下、本発明の実施の形態について、図１〜図６を用いて説明する。   Hereinafter, embodiments of the present invention will be described with reference to FIGS.

図１は本発明の発光ダイオードの側断面図、図２は同発光ダイオードの斜視図である。図１、図２に示すように、発光ダイオード１は、凹部２０を備えた基材の一例である基板２と、凹部２０内に搭載された半導体発光装置４と、凹部２０内に形成され、半導体発光装置４の第１の樹脂層５ａの側面を覆う第２の樹脂層５ｂとを備えている。凹部２０は、平面視して小判形かつ断面溝形に形成されている。   FIG. 1 is a side sectional view of a light emitting diode of the present invention, and FIG. 2 is a perspective view of the light emitting diode. As shown in FIGS. 1 and 2, the light emitting diode 1 is formed in a substrate 2 that is an example of a base material having a recess 20, a semiconductor light emitting device 4 mounted in the recess 20, and the recess 20. And a second resin layer 5b covering the side surface of the first resin layer 5a of the semiconductor light emitting device 4. The recess 20 is formed in an oval shape and a cross-sectional groove shape in plan view.

基板２は逆Ｔ字状に形成され、凹部２０は、縦置きされた基板２の上側に形成されている。また、凹部２０は、半導体発光装置４を収納して搭載できる大きさに形成されている。   The substrate 2 is formed in an inverted T shape, and the recess 20 is formed on the upper side of the vertically placed substrate 2. The recess 20 is formed in a size that allows the semiconductor light emitting device 4 to be housed and mounted.

半導体発光装置４は、矩形のサブマウント素子９と、Ｎ電極およびＰ電極（図示せず）を凹部２０の底面６側に向けて配置して、サブマウント素子９上にバンプを介してフリップチップ接続された半導体発光素子１０とを有し、蛍光体１２ａを含む第１の樹脂層５ａは、半導体発光素子１０の表面および側面を覆って直方体状に形成されている。   In the semiconductor light emitting device 4, a rectangular submount element 9, an N electrode and a P electrode (not shown) are arranged toward the bottom surface 6 side of the recess 20, and flip chip is provided on the submount element 9 via bumps. The first resin layer 5 a including the connected semiconductor light emitting element 10 and including the phosphor 12 a is formed in a rectangular parallelepiped shape so as to cover the surface and side surfaces of the semiconductor light emitting element 10.

基板２の凹部２０の底面６には、基板２の表面７の電極１６に一体的に接続されるとともに、半導体発光装置４の下面の電極（図示せず）に導通接続された電極８が形成され、基板２の表面７には、サブマウント素子９の表面にワイヤ１７を介してワイヤボンディングされた電極１５が形成されている。   On the bottom surface 6 of the recess 20 of the substrate 2, an electrode 8 is formed which is integrally connected to the electrode 16 on the surface 7 of the substrate 2 and electrically connected to an electrode (not shown) on the lower surface of the semiconductor light emitting device 4. On the surface 7 of the substrate 2, an electrode 15 that is wire-bonded to the surface of the submount element 9 via a wire 17 is formed.

半導体発光素子１０を覆う第１の樹脂層５ａは、樹脂に蛍光体１２ａ、拡散材（図示せず）や紫外線照射により硬化する硬化剤等を混入させたペースト材料を印刷し、硬化させたものである。   The first resin layer 5a covering the semiconductor light emitting element 10 is obtained by printing and curing a paste material in which a phosphor 12a, a diffusing material (not shown), a curing agent that is cured by ultraviolet irradiation, and the like are mixed in a resin. It is.

印刷用ペースト材料を転写する版（図示せず）は、半導体発光素子１０との間の距離を調整することができ、これによって、印刷するペースト材料の半導体発光素子１０の表面側の厚みを微調整してからこれを硬化させて樹脂層５ａを形成し、表面側から所定の色度の光を出射させることができる。   A plate (not shown) for transferring the paste material for printing can adjust the distance from the semiconductor light emitting element 10, thereby minimizing the thickness of the surface of the semiconductor light emitting element 10 of the paste material to be printed. After adjustment, this is cured to form the resin layer 5a, and light having a predetermined chromaticity can be emitted from the surface side.

例えば、半導体発光素子が青色光を発生させ、励起された蛍光体１２ａが黄緑色光を発生させるように構成した場合には、樹脂層５ａの厚みを厚く形成することによって、表面側から出射される黄緑色光の成分を多くし、樹脂層５ａの厚みを薄く形成することによって、表面側から出射される青色光の成分を多くすることができる。   For example, in the case where the semiconductor light emitting element generates blue light and the excited phosphor 12a generates yellow green light, the resin layer 5a is formed thick so that it is emitted from the surface side. By increasing the yellow-green light component and reducing the thickness of the resin layer 5a, the blue light component emitted from the surface side can be increased.

樹脂層５ａの幅は、サブマウント素子９の外形より大きくすることができず、また、ペースト材料の幅は、転写する版によって予め定まっており、印刷時にこれを調整することはできない。このため、樹脂層５ａの側方の厚みが表面側の厚みより薄くなってしまい、半導体発光素子１０から側方に出射される光の色度を、単体の半導体発光装置４によって調整することが困難になる。   The width of the resin layer 5a cannot be made larger than the outer shape of the submount element 9, and the width of the paste material is determined in advance by the plate to be transferred and cannot be adjusted during printing. For this reason, the thickness of the side of the resin layer 5a becomes thinner than the thickness of the surface side, and the chromaticity of the light emitted from the semiconductor light emitting element 10 to the side can be adjusted by the single semiconductor light emitting device 4. It becomes difficult.

一方、第２の樹脂層５ｂを形成する液状充填剤は、例えば、熱硬化型の樹脂１１に蛍光体１２および透光性の拡散材１３を混入したものであり、蛍光体１２の濃度はある程度自由に調整することができる。この濃度は、半導体発光装置４の半導体発光素子１０から側方に出射される光が、表面側に出射される光と同様の色度になるように調整することができるので、樹脂層５ａの側方の厚みが薄くても樹脂層５ｂによってこれを補うことができる。   On the other hand, the liquid filler forming the second resin layer 5b is, for example, a mixture in which the phosphor 12 and the translucent diffusing material 13 are mixed in the thermosetting resin 11, and the concentration of the phosphor 12 is to some extent. It can be adjusted freely. This concentration can be adjusted so that the light emitted from the semiconductor light emitting element 10 of the semiconductor light emitting device 4 to the side has the same chromaticity as the light emitted to the front surface side. Even if the lateral thickness is small, the resin layer 5b can compensate for this.

例えば、半導体発光装置４が青色光を発生させ、励起された蛍光体１２，１２ａが黄緑色光を発生させるように構成した場合には、第２の樹脂層５ｂ内の蛍光体１２の濃度を高くすることによって、側方に出射される黄緑色光の成分を多くし、蛍光体１２の濃度を低くすることによって、側方に出射される青色光の成分を多くすることができる。   For example, when the semiconductor light emitting device 4 generates blue light and the excited phosphors 12 and 12a generate yellow green light, the concentration of the phosphor 12 in the second resin layer 5b is set to be the same. By increasing it, the component of yellow-green light emitted to the side can be increased, and by reducing the concentration of the phosphor 12, the component of blue light emitted to the side can be increased.

基板２、第１の樹脂層５ａおよび第２の樹脂層５ｂの表面には、その光軸を、半導体発光素子１０の光軸に合わせた透光性樹脂からなるレンズ１４が形成されている。また、レンズ１４は、基板２の下部に形成された脚部１８および基板２の中央部を覆ってワイヤ１７を保護する保護部１９とともに一体的に形成されている。   On the surface of the substrate 2, the first resin layer 5 a and the second resin layer 5 b, a lens 14 made of a translucent resin whose optical axis is aligned with the optical axis of the semiconductor light emitting element 10 is formed. The lens 14 is integrally formed with a leg portion 18 formed at the lower portion of the substrate 2 and a protection portion 19 that covers the central portion of the substrate 2 and protects the wire 17.

発光ダイオード１に通電すると、半導体発光素子１０の発光面から光が出射される。表面側に出射した光は、第１の樹脂層５ａ内の表面部の蛍光体１２ａに当たってこれを励起させる。   When the light emitting diode 1 is energized, light is emitted from the light emitting surface of the semiconductor light emitting element 10. The light emitted to the surface side strikes the phosphor 12a on the surface portion in the first resin layer 5a to excite it.

また、半導体発光素子１０の発光面から側方に出射した光は、第１の樹脂層５ａの側部の蛍光体１２ａに当たってこれを励起させ、さらに第１の樹脂層５ａを通過して側方に出射した光は、第２の樹脂層５ｂ内の蛍光体１２に当たってこれを励起させる。   Further, the light emitted from the light emitting surface of the semiconductor light emitting element 10 to the side strikes the phosphor 12a on the side of the first resin layer 5a to excite it, and further passes through the first resin layer 5a to the side. The light emitted to the phosphor 12 strikes the phosphor 12 in the second resin layer 5b and excites it.

半導体発光素子１０から出射された光と、励起された蛍光体１２，１２ａから出射された光は、拡散材１３内を通過して、レンズ１４内に入射し、レンズ１４の表面で集光されて外側に出射される。   The light emitted from the semiconductor light emitting element 10 and the light emitted from the excited phosphors 12 and 12 a pass through the diffusion material 13, enter the lens 14, and are collected on the surface of the lens 14. Is emitted to the outside.

蛍光体１２を有する第２の樹脂層５ｂを設けたので、半導体発光素子１０から側方に出射された光によって、第２の樹脂層５ｂ内の蛍光体１２を効率よく励起することができ、均一な色度で、光度が高い光を取り出すことができる。   Since the second resin layer 5b having the phosphor 12 is provided, the phosphor 12 in the second resin layer 5b can be efficiently excited by the light emitted from the semiconductor light emitting element 10 to the side, Light with high luminosity can be extracted with uniform chromaticity.

次に発光ダイオード１の製造手順について説明する。   Next, a manufacturing procedure of the light emitting diode 1 will be described.

（半導体発光装置製造）
樹脂に蛍光体１２ａ、拡散材や紫外線照射により硬化する硬化剤等を混入させペースト材料を製造する。 (Semiconductor light-emitting device manufacturing)
A paste material is manufactured by mixing the phosphor 12a, a diffusing material, a curing agent that is cured by ultraviolet irradiation, and the like into the resin.

多数のサブマウント素子９が一体的に形成された集合基板（図示せず）に半導体発光素子１０をそれぞれ搭載した後、第１の樹脂層５ａの大きさに合わせて形成した印刷用の版にペースト材料を転写し、半導体発光素子１０に印刷する。印刷後は、ペースト材料に紫外線を照射して硬化させ、第１の樹脂層５ａを形成する。その後、各サブマウント素子９を第１の樹脂層５ａごとに切り離して半導体発光装置４を形成する。   After mounting the semiconductor light emitting elements 10 on a collective substrate (not shown) in which a large number of submount elements 9 are integrally formed, a printing plate formed in accordance with the size of the first resin layer 5a is formed. The paste material is transferred and printed on the semiconductor light emitting device 10. After printing, the paste material is cured by irradiating ultraviolet rays to form the first resin layer 5a. Thereafter, each submount element 9 is separated for each first resin layer 5a to form the semiconductor light emitting device 4.

（液状充填剤混合）
流動性を有する樹脂１１に蛍光体１２と拡散材１３を混合する。蛍光体１２の濃度は、例えば、予め定められた第１の樹脂層５ａの側部の厚みと表面部の厚みとの差から計算された、蛍光体１２の量の差に対応する濃度とすることができるが、実際の測定値を保存したデータベースから最適値に近似するものを選択することも可能である。 (Liquid filler mixing)
A phosphor 12 and a diffusing material 13 are mixed in a resin 11 having fluidity. The density | concentration of the fluorescent substance 12 is taken as the density | concentration corresponding to the difference of the quantity of the fluorescent substance 12 calculated from the difference of the thickness of the side part of the 1st resin layer 5a defined beforehand, and the thickness of the surface part, for example. However, it is also possible to select one that approximates the optimum value from a database that stores actual measurement values.

（半導体発光装置の搭載）
基板２を、凹部２０の開口部３が上方に向くように配置して、凹部２０内の底面６上に半導体発光装置４をダイボンディングし、ワイヤ１７を用いて、半導体発光装置４の電極と、表面７の電極１５を導通接続する。 (Installation of semiconductor light emitting device)
The substrate 2 is disposed so that the opening 3 of the recess 20 faces upward, the semiconductor light emitting device 4 is die-bonded on the bottom surface 6 in the recess 20, and the wires 17 are used to connect the electrodes of the semiconductor light emitting device 4. The electrode 15 on the surface 7 is electrically connected.

本実施の形態においては、基板２の表面７と半導体発光装置４の第１の樹脂層５ａの表面のレベルがほぼ一致しているが、第１の樹脂層の厚みによっては、第１の樹脂層の表面が凹部２０から突出して配置されることもあり、また、第１の樹脂層５ａの表面が基板２の表面７より底面６側に配置されることもある。   In the present embodiment, the level of the surface 7 of the substrate 2 and the level of the surface of the first resin layer 5a of the semiconductor light emitting device 4 are substantially the same, but depending on the thickness of the first resin layer, the first resin The surface of the layer may be disposed so as to protrude from the recess 20, and the surface of the first resin layer 5 a may be disposed closer to the bottom surface 6 than the surface 7 of the substrate 2.

（ポッティング）
基板２を、凹部２０の開口部３が上方に向くように配置し、凹部２０内に上方から液状充填剤を滴下する。液状充填剤の量は、表面が基板２の表面７と同じレベルになる量に設定している。半導体発光装置４の第１の樹脂層の表面が凹部２０から突出する場合には、第１の樹脂層の表面には液状充填剤は塗布されず、基板２の表面７より底面６側に配置される場合には、第１の樹脂層の表面にも液状充填剤が塗布される。いずれの場合でも、第１の樹脂層の側面には必ず液状充填剤が塗布されることになる。 (Potting)
The substrate 2 is placed so that the opening 3 of the recess 20 faces upward, and the liquid filler is dropped into the recess 20 from above. The amount of the liquid filler is set to such an amount that the surface becomes the same level as the surface 7 of the substrate 2. When the surface of the first resin layer of the semiconductor light emitting device 4 protrudes from the recess 20, the liquid filler is not applied to the surface of the first resin layer, and is disposed closer to the bottom surface 6 than the surface 7 of the substrate 2. In such a case, the liquid filler is also applied to the surface of the first resin layer. In either case, the liquid filler is always applied to the side surface of the first resin layer.

（硬化）
基板２を、加熱用ラック（図示せず）のスロットに挿入して多段に配置し、恒温槽に入れて所定時間加熱し、第２の樹脂層５ｂを硬化させる。 (Curing)
The substrate 2 is inserted into a slot of a heating rack (not shown) and arranged in multiple stages, placed in a thermostat and heated for a predetermined time, and the second resin layer 5b is cured.

（レンズ形成）
基板２を成形用金型にセットし、エポキシ樹脂等の透光性樹脂により、レンズ１４、脚部１８および保護部１９を成形する。 (Lens formation)
The substrate 2 is set in a molding die, and the lens 14, the leg portion 18, and the protection portion 19 are molded from a light-transmitting resin such as an epoxy resin.

このような手順で発光ダイオード１を製造することができる。   The light emitting diode 1 can be manufactured by such a procedure.

前記実施の形態の発光ダイオードにおいて、半導体発光素子の発光色を青、励起したときの蛍光体の発光色を黄緑とし、第１の樹脂層の厚みを１５７μｍに設定した場合において、第２の樹脂層に混入する蛍光体の質量の、樹脂層の質量に対する割合を変えて光軸上の光度を測定した。   In the light emitting diode of the above embodiment, when the emission color of the semiconductor light emitting element is blue, the emission color of the phosphor when excited is yellow green, and the thickness of the first resin layer is set to 157 μm, The luminous intensity on the optical axis was measured by changing the ratio of the mass of the phosphor mixed in the resin layer to the mass of the resin layer.

図３〜図５は、第２の樹脂層に混入する蛍光体の割合をそれぞれ０％、１０％、２５％にしたときの発光素子の発光軸上における光度を示すグラフである。それぞれ横軸は積分球値を表し、縦軸は軸上光度を表している。なお、積分球値から換算式を用いることによって光の全光束を求めることができる。   3 to 5 are graphs showing the luminous intensity on the emission axis of the light emitting element when the ratio of the phosphor mixed in the second resin layer is 0%, 10%, and 25%, respectively. The horizontal axis represents the integrating sphere value, and the vertical axis represents the axial luminous intensity. Note that the total luminous flux of the light can be obtained by using a conversion formula from the integrating sphere value.

図６は、測定データを、色度座標上に示したグラフである。半導体発光素子に蛍光体入り樹脂が印刷されたもので、かつ、凹部に蛍光体入りの樹脂が充填されていない場合の発光色は、（ｘ＝０．２９、ｙ＝０．２９）の点（平均値）で示されて図の左下側に配置され、半導体発光素子に蛍光体入り樹脂が印刷されたもので、かつ、凹部に蛍光体が濃度２５ｗｔ％の割合で混入された樹脂を充填させた場合の発光色は、（ｘ＝０．３１、ｙ＝０．３１）の点（平均値）で示されて図の右上側に配置される。また、ｘ＝０．３１、ｙ＝０．３１付近が白色光の領域となる。   FIG. 6 is a graph showing measurement data on chromaticity coordinates. When the semiconductor light emitting element is printed with a phosphor-containing resin and the concave portion is not filled with the phosphor-containing resin, the emission color is (x = 0.29, y = 0.29). (Average value) is placed on the lower left side of the figure, the semiconductor light emitting element is printed with phosphor-containing resin, and the concave portion is filled with resin mixed with phosphor at a concentration of 25 wt% The luminescent color in the case of being made is indicated by a point (average value) of (x = 0.31, y = 0.31) and arranged on the upper right side of the figure. Further, the region of white light is near x = 0.31 and y = 0.31.

図３〜図５に示すように、第２の樹脂層に蛍光体を混入しないときの軸上光度の平均値は２３２ｍｃｄ、１０％のときは２４３ｍｃｄ、２５％のときは２８１ｍｃｄとなった。半導体発光素子に蛍光体入り樹脂が印刷されたもので、かつ、凹部に蛍光体入りの樹脂が充填されていない場合の光度より、半導体発光素子に蛍光体入り樹脂が印刷されたもので、かつ、凹部に蛍光体が濃度２５ｗｔ％の割合で混入された樹脂を充填させた場合の方が光度が高いので、上記の結果は、半導体発光素子の発光が、より多くの蛍光体を励起させて波長変換されたことを示している。すなわち、光度の増加分は、半導体発光素子から側方に出射された光が、第２の樹脂層内の蛍光体を励起させた分と考えられる。   As shown in FIG. 3 to FIG. 5, the average value of the on-axis luminous intensity when no phosphor is mixed in the second resin layer was 232 mcd at 10%, 243 mcd at 25%, and 281 mcd at 25%. The semiconductor light-emitting element is printed with a phosphor-containing resin, and the light intensity when the recess is not filled with the phosphor-containing resin is a semiconductor light-emitting element printed with a phosphor-containing resin, and Since the luminous intensity is higher when the concave portion is filled with a resin in which a phosphor is mixed at a concentration of 25 wt%, the above results indicate that the light emission of the semiconductor light emitting element excites more phosphors. This indicates that the wavelength has been converted. That is, the increase in luminous intensity is considered to be the amount that the light emitted from the semiconductor light emitting element sideways excites the phosphor in the second resin layer.

図６に示すように、蛍光体の割合が０％のときは、図中の左下側、すなわち青色に近い白色光となっているが、この割合を１０％、２５％と増加させるにつれて、発光色は図中の右上に移動し、ｘ＝０．３１、ｙ＝０．３１付近の白色光領域に近づくという結果が得られた。   As shown in FIG. 6, when the proportion of the phosphor is 0%, it is white light close to the lower left side in the drawing, that is, blue, but as this proportion is increased to 10% and 25%, the light emission is increased. The result was that the color moved to the upper right in the figure and approached the white light region near x = 0.31 and y = 0.31.

本発明にかかる発光ダイオードおよびその製造方法は装置を小型化するとともに所定の色度を得ることができ、半導体発光装置を樹脂層で覆って形成した発光ダイオード等に有用である。   The light emitting diode and the method for manufacturing the same according to the present invention can reduce the size of the device and obtain a predetermined chromaticity, and are useful for a light emitting diode formed by covering a semiconductor light emitting device with a resin layer.

本発明の発光ダイオードの側断面図Side sectional view of the light emitting diode of the present invention 同発光ダイオードの斜視図Perspective view of the light emitting diode 第２の樹脂層に混入する蛍光体の割合をそれぞれ０％にしたときの発光ダイオードの光軸上における白色光の光度を示すグラフThe graph which shows the luminous intensity of the white light on the optical axis of a light emitting diode when the ratio of the fluorescent substance mixed in a 2nd resin layer is each 0% 第２の樹脂層に混入する蛍光体の割合をそれぞれ１０％にしたときの発光ダイオードの光軸上における白色光の光度を示すグラフThe graph which shows the luminous intensity of the white light on the optical axis of a light emitting diode when the ratio of the fluorescent substance mixed in a 2nd resin layer is 10%, respectively. 第２の樹脂層に混入する蛍光体の割合をそれぞれ２５％にしたときの発光ダイオードの光軸上における白色光の光度を示すグラフThe graph which shows the luminous intensity of the white light on the optical axis of a light emitting diode when the ratio of the fluorescent substance mixed in a 2nd resin layer is each 25% 測定データを、色度座標上に示したグラフGraph showing measured data on chromaticity coordinates

符号の説明Explanation of symbols

１ 発光ダイオード
２ 基板
３ 開口部
４ 半導体発光装置
５ａ 第１の樹脂層
５ｂ 第２の樹脂層
６ 底面
７ 表面
８ 電極
９ サブマウント素子
１０ 半導体発光素子
１１ 樹脂
１２，１２ａ 蛍光体
１３ 拡散材
１４ レンズ
１５ 電極
１６ 電極
１７ ワイヤ
１８ 脚部
１９ 保護部
２０ 凹部 DESCRIPTION OF SYMBOLS 1 Light emitting diode 2 Board | substrate 3 Opening part 4 Semiconductor light-emitting device 5a 1st resin layer 5b 2nd resin layer 6 Bottom face 7 Surface 8 Electrode 9 Submount element 10 Semiconductor light emitting element 11 Resin 12, 12a Phosphor 13 Diffuser 14 Lens 15 electrode 16 electrode 17 wire 18 leg 19 protection part 20 recess

Claims (3)

サブマウント素子上に半導体発光素子を搭載し、この半導体発光素子を蛍光体を含んだ第１の樹脂層で覆って形成した半導体発光装置と、この半導体発光装置を、凹部内の底面に搭載した基材とを備えた発光ダイオードにおいて、
前記凹部内の前記第１の樹脂層の側面は、蛍光体を含む第２の樹脂層で覆われていることを特徴とする発光ダイオード。 A semiconductor light emitting device is mounted on the submount element, the semiconductor light emitting device is covered with a first resin layer containing a phosphor, and the semiconductor light emitting device is mounted on the bottom surface in the recess. In a light emitting diode comprising a substrate,
A side surface of the first resin layer in the recess is covered with a second resin layer containing a phosphor. 前記基材、前記第１の樹脂層および第２の樹脂層の表面には、透光性樹脂からなるレンズが形成されていることを特徴とする請求項１に記載の発光ダイオード。 2. The light emitting diode according to claim 1, wherein a lens made of a translucent resin is formed on surfaces of the base material, the first resin layer, and the second resin layer. サブマウント素子上に半導体発光素子を搭載し、この半導体発光素子を蛍光体を含んだ第１の樹脂層で覆って形成した半導体発光装置と、この半導体発光装置を、凹部内の底面に搭載した基材とを備えた発光ダイオードの製造方法において、
蛍光体が混入されたペースト材料を半導体発光素子に印刷して硬化させ、前記半導体発光素子を覆う第１の樹脂層を形成する印刷工程と、
前記半導体発光装置が搭載された凹部に、蛍光体が混入された液状充填剤を滴下して硬化させ、前記第１の樹脂層の側面を覆う第２の樹脂層を形成するポッティング工程とを備えたことを特徴とする発光ダイオードの製造方法。 A semiconductor light emitting device is mounted on the submount element, the semiconductor light emitting device is covered with a first resin layer containing a phosphor, and the semiconductor light emitting device is mounted on the bottom surface in the recess. In a method for producing a light emitting diode comprising a substrate,
A printing process in which a paste material mixed with a phosphor is printed on a semiconductor light emitting element and cured to form a first resin layer covering the semiconductor light emitting element;
A potting step of forming a second resin layer covering the side surface of the first resin layer by dripping and curing a liquid filler mixed with a phosphor in a recess in which the semiconductor light emitting device is mounted; A method for producing a light-emitting diode, characterized by comprising:
JP2003374139A 2003-11-04 2003-11-04 Light emitting diode Expired - Fee Related JP4300980B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003374139A JP4300980B2 (en) 2003-11-04 2003-11-04 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003374139A JP4300980B2 (en) 2003-11-04 2003-11-04 Light emitting diode

Publications (2)

Publication Number Publication Date
JP2005142194A true JP2005142194A (en) 2005-06-02
JP4300980B2 JP4300980B2 (en) 2009-07-22

Family

ID=34685947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003374139A Expired - Fee Related JP4300980B2 (en) 2003-11-04 2003-11-04 Light emitting diode

Country Status (1)

Country Link
JP (1) JP4300980B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100600404B1 (en) 2005-06-22 2006-07-18 엘지전자 주식회사 Light emitting diode package of side view type and fabricating method thereof
JP2007095807A (en) * 2005-09-27 2007-04-12 Sanyo Electric Co Ltd Manufacturing method of light emitting device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112014007771B1 (en) 2011-10-21 2020-04-14 Rohm & Haas aqueous hybrid binder, process for the production of aqueous hybrid binder, and coating composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100600404B1 (en) 2005-06-22 2006-07-18 엘지전자 주식회사 Light emitting diode package of side view type and fabricating method thereof
JP2007095807A (en) * 2005-09-27 2007-04-12 Sanyo Electric Co Ltd Manufacturing method of light emitting device
US7750551B2 (en) 2005-09-27 2010-07-06 Sanyo Electric Co., Ltd. Light emitting device and method for manufacturing the same

Also Published As

Publication number Publication date
JP4300980B2 (en) 2009-07-22

Similar Documents

Publication Publication Date Title
US8597963B2 (en) Manufacture of light emitting devices with phosphor wavelength conversion
US7319245B2 (en) Radiation emitting semiconductor component with luminescent conversion element
JP4389126B2 (en) Semiconductor light emitting device and manufacturing method thereof
EP1900040B1 (en) Light emitting diode and method of fabricating the same
JP3640153B2 (en) Illumination light source
US20100109040A1 (en) Chip coated light emitting diode package and manufacturing method thereof
US20110018026A1 (en) Light emitting device, and method and apparatus for manufacturing same
KR20070012501A (en) Light-emitting device and method for manufacturing same
JP2000208822A (en) Semiconductor light-emitting device
KR20040075738A (en) Light emitting apparatus
JP3725413B2 (en) Semiconductor light emitting device
KR100982989B1 (en) Light emitting diode package
JP2006140197A (en) Method of manufacturing led
JP2005311395A (en) Manufacturing method of semiconductor light-emitting device
JP2007042687A (en) Light emitting diode device
JP2010103349A (en) Method of manufacturing light emitting device
JP2007220737A (en) Light emitting device
JP5148126B2 (en) Color conversion light emitting device and manufacturing method thereof
KR100868204B1 (en) Light emitting diode using light diffusion material and method for fabricating the same
JP4300980B2 (en) Light emitting diode
KR100748707B1 (en) Method for manufacturing light-emitting device
JP2005333069A (en) Manufacturing method of light emitting diode
JP2007324630A (en) Semiconductor light-emitting device
KR100593161B1 (en) White light emitting diode and manufacturing method thereof
JP2006059851A (en) Semiconductor light emitting device, illuminating device using the same and its manufacturing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060928

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20061012

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081226

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090106

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090306

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090331

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120501

Year of fee payment: 3

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090413

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120501

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120501

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130501

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees