JP2005123633A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly integrated resin-sealed semiconductor device structure, having a size similar to that of a semiconductor chip. <P>SOLUTION: The resin-sealed semiconductor device has a semiconductor chip 10 having a surface in which a plurality of electrode pads are formed, a plurality of leads 20 having first portions arranged on the surface of the semiconductor chip and second portions bent from the first portion, a plurality of recess portions 62R, 62L on the surface, a sealing resin 62, in which the tip of the second portion of the plurality of leads is exposed respectively from the plurality of recess portions, and a plurality of electrodes 70, prepared respectively on the tip of the lead exposed from the sealing resin. The electrodes are arranged separated from the sidewalls of the corresponding recesses. With this configuration, the resin-sealed semiconductor device having a size similar to the semiconductor chip is realized. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device and a semiconductor device unit in which a plurality of the semiconductor devices are mounted.

In recent years, various semiconductor package structures have been proposed as semiconductor devices are increasingly integrated. For example, Japanese published patent publication “JP-A-8-125066” published on May 17, 1996, Japanese published patent publication “JP-A-10-188661” published on July 21, 1998 A structure as described in "is proposed.
JP 08-125066 JP-A-10-188661

In order to obtain the structure shown in the former publication, it is necessary to process the lead frame by an etching technique. However, since this process requires many steps, there is a problem that it is difficult to control the shape in addition to the problem that it takes time to process the lead frame.
On the other hand, in order to obtain the structure shown in the latter publication, it is necessary to bend the intermediate portions of the leads in the upward and lateral directions. However, there is a problem that it is practically difficult to bend the intermediate portions of a large number of leads arranged at fine intervals upward and laterally.

An object of the present invention is to provide a highly integrated resin-encapsulated semiconductor device structure having a size equivalent to that of a semiconductor chip.
Another object of the present invention is to provide a method for easily manufacturing a resin-encapsulated semiconductor device in which a part of a lead is exposed from the surface of the resin with good controllability.

In order to achieve the above object, according to a representative invention of the present application, in a resin-encapsulated semiconductor device, a plurality of semiconductor devices are arranged on a semiconductor chip, and end portions thereof are bent in a direction perpendicular to the main surface of the semiconductor chip. The leads of the ends of each lead are exposed from the surface of the resin, and conductors for connecting to the outside are formed on the tips of the exposed ends.
According to such a configuration, a resin-encapsulated semiconductor device having a size equivalent to the size of the semiconductor chip can be realized.

In order to achieve the other object, in another representative invention of the present application, in a method of manufacturing a resin-encapsulated semiconductor device in which a part of a lead is exposed from the surface of the resin, the end of the lead The portion is bent in the direction perpendicular to the surface of the semiconductor chip, and the tip of the end portion is exposed.
According to such a method, since the end portion of the lead is bent, a part of the lead can be easily exposed from the surface of the resin with good controllability by diverting the existing processing method such as press working. A resin-encapsulated semiconductor device can be formed.

According to the representative invention of the present application, it is possible to realize a highly integrated resin-encapsulated semiconductor device having a size equivalent to that of a semiconductor chip.
Further, according to another representative invention of the present application, when bending the end portion of the lead, since an existing processing method such as press working can be used, the lead from the surface of the resin can be easily and easily controlled. It is possible to form a resin-encapsulated semiconductor device in which a part of the semiconductor device is exposed.

Embodiments of the present invention will be described below with reference to the drawings. In the following description, the part directly related to the present invention will be mainly described, and the description of other parts will be omitted. First, a first embodiment will be described with reference to FIGS.

  FIG. 1 shows a cross-sectional view of a first embodiment of a resin-encapsulated semiconductor device according to the present invention. FIG. 2 is a plan view of the resin-encapsulated semiconductor device shown in FIG.

  In the first embodiment, a plurality of leads 20 are arranged on the semiconductor element 10 via an insulating tape 30. The lead 20 is electrically connected to a plurality of pads 40 formed on the semiconductor element 10. Here, a gold wire 50 is used for this electrical connection. Each pad 40 is connected to a semiconductor integrated circuit formed on the surface of the semiconductor element 10. These elements are sealed with a resin 60.

The end of the lead 20 is bent in a direction perpendicular to the surface of the semiconductor element 10. The tip of the end portion of the bent lead 20 is exposed from the resin 60. A plurality of pole portions 70 are formed on the tips of the exposed end portions of the respective leads 20.
These electrodes 70 are electrically connected on an external substrate 80 as shown in FIG. 3, and an electrical signal generated in the semiconductor element 10 from a predetermined electrode is output to the outside. Further, an external electrical signal is given to the other electrodes. The electrode part 70 is often formed of solder. In the present embodiment, an electrode portion formed of ball-shaped solder is shown, but the shape and material are not limited to this. For example, it is conceivable that a flat electrode is used instead of a ball, and it is conceivable that other metallic conductors are used in addition to solder.

  Here, for ease of understanding, a schematic diagram in which the electrode 70 is removed from the plan view of FIG. 2 is shown in FIG. As shown in FIG. 4, the tip 20 ′ of the end of the lead 20 is exposed on the surface of the resin 60. The exposed tip 20 ′ of the end of the lead 20 is exposed so as to be connected to the electrode 70 in electrical connection.

In FIG. 4, the tip 20 ′ at the end of the exposed lead 20 is shown in a square shape, but the shape is not limited to this as long as it is electrically connected to the electrode 70. If the lead 20 is a flat plate, the tip 20 ′ of the end of the exposed lead 20 has a rectangular shape. According to the inventor's knowledge, when the electrode 70 is spherical, it is considered optimal that the tip 20 ′ of the end portion of the lead 20 is square.
According to such a configuration, a highly integrated resin-encapsulated semiconductor device having a size equivalent to the size of the semiconductor chip can be realized.

  Next, a method for manufacturing this semiconductor device will be described. Here, only the points directly related to the invention will be described in detail, and description of other points will be omitted. However, the omitted points can be easily understood by referring to Japanese Patent Laid-Open No. 8-227967.

  First, as shown in FIG. 5, a lead frame 20F in which a plurality of leads 20 are arranged at predetermined positions is prepared. In FIG. 5, only the lead corresponding to one semiconductor element is shown in the lead frame 20 </ b> F, but actually, the same configuration is repeatedly arranged via the space F.

The tip 20 'of the end portion of each lead 20 of the lead frame 20F is bent in the vertical direction (the front side of the drawing) by press working. The term “vertical bending” as used herein means that the tip 20 ′ of the lead is bent in a direction perpendicular to the surface of the semiconductor element connected to the lead in a later step.
The length of the end portion of the lead 20 to be bent is determined by the relationship with the thickness of the resin formed in a later process. That is, in order to expose the tip of the end to the surface of the resin, if the thickness of the resin increases, the end of the lead that is bent becomes longer, and if the thickness of the resin decreases, the end of the lead that is bent becomes Shorter. The length of the end portion of the lead to be bent is appropriately set by the designer.

  Next, among the plurality of leads, insulating tapes 30L and 30R are bonded to the lower portions of the lead group 20L arranged on the left side and the lead group 20R arranged on the right side in FIG. The tape 30 has adhesiveness on both sides of the tape as introduced in the above publication. Here, the insulating tapes 30L and 30R are continuously disposed below the right and left lead groups, respectively, but the shape of the tape is not limited thereto. For example, the shape which divided | segmented the insulating tapes 30L and 30R into several can also be considered, and the shape which has arrange | positioned the tape only to the lower part of each lead 20 is also considered.

Next, as shown in FIG. 6, the semiconductor element 10 is disposed below the lead 20 bonded with the insulating tape 30, and then the circuit forming surface of the semiconductor element 10 and the lead 20 form the insulating tape 30. Glued through.
Thereafter, as shown in a plan view in FIG. 7 and a cross-sectional view in FIG. 8, a predetermined lead of the plurality of leads 20 and a predetermined pad 40 on the semiconductor element 10 are connected to the gold wire 50. Is done. This connection can be realized by a known wire bonding method. Here, an example of connection using a gold wire is shown, but it is functionally sufficient if the lead and the pad are electrically connected to each other. Therefore, other highly conductive conductors can also be used.

Next, the structure shown in FIGS. 7 and 8 is sandwiched as shown in FIG. 9 by a mold 90 including an upper mold 90A and a lower mold 90B, and a sealing resin 60 such as an epoxy resin is injected therein. . At this time, since the mold 90 is sandwiched so that the tip 20 'of the end portion of the lead 20 and the upper mold 90A are in contact with each other, when the mold is removed after injecting the sealing resin 60, FIG. As shown, the tip 20 'of the lead 20 is exposed.
Ball-shaped solder to be the electrode 70 is formed on the tip 20 ′ of the lead 20. In the present embodiment, an electrode portion formed of ball-shaped solder is shown, but a flat electrode may be applied instead of a ball. Further, not only solder but also other metallic conductors can be used.

  Thereafter, the lead frame 20F in which a plurality of semiconductor devices are formed is pressed and divided into individual semiconductor devices. That is, the lead led out from the sealing resin 60 is cut to obtain a semiconductor device as shown in FIG.

  According to such a manufacturing method, when bending the end portion of the lead, an existing processing method such as press working can be used. Therefore, a part of the lead is easily exposed from the surface of the resin with good controllability. Such a resin-encapsulated semiconductor device can be formed. Therefore, a resin-encapsulated semiconductor device in which a part of the lead is exposed from the resin surface can be manufactured at low cost.

Next, a second embodiment will be described. In the description of this embodiment, the same parts as those in the first embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.
The characteristic configuration in this embodiment is the arrangement of electrodes. In this embodiment, the tips of the leads exposed from the resin are arranged in a zigzag shape (staggered shape). Therefore, the electrodes connected to the tips of the leads are arranged in a zigzag shape.

  12 shows a cross-sectional view of the present embodiment, FIG. 13 shows a plan view showing the arrangement of electrodes in the present embodiment, and FIG. 14 shows the plan view of FIG. 13 for easy understanding. FIG. 14 shows a schematic diagram (plan view showing the arrangement of exposed lead tips) with electrodes removed from the plan view. The description of the second embodiment will be continued below with reference to these drawings.

In the second embodiment, a plurality of short leads 20LA and 20RA having a plurality of short lengths and long leads 20LB and 20RB having a longer length than the short leads are alternately arranged on the semiconductor element 10. In the drawing, short leads 20LA and long leads 20LB are alternately arranged on the left side, and short leads 20RA and long leads 20RB are alternately arranged on the right side. The length of the short lead and the long lead can be appropriately set by the designer in consideration of the distance between adjacent leads (generally referred to as pitch), the size of the electrode formed on the tip of the lead, and the like.
These leads are respectively bonded to the semiconductor element 10 by insulating tapes 30LA, 30LB, 30RA, and 30RB. Each lead is electrically connected to a plurality of pads 40 formed on the semiconductor element 10. Here, a gold wire 50 is used for this electrical connection. Each pad 40 is connected to a semiconductor integrated circuit formed on the surface of the semiconductor element 10. These elements are sealed with a resin 60.

  The end of each lead is bent in the direction perpendicular to the surface of the semiconductor element 10 as in the first embodiment. The tips 20LA ′, 20LB ′, 20RA ′, and 20RB ′ at the ends of the bent leads are exposed from the resin 60. Lead tip 20LA ′ and lead tip 20LB ′ are positioned on a straight line. The lead tip 20LA ′ and the lead tip 20LB ′ have a parallel positional relationship. The other lead tip 20RA ′ and the lead tip 20RB ′ have the same relationship. A plurality of pole portions 70LA, 70LB, 70RB, and 70RA are formed on the exposed tips of the leads. Accordingly, the electrodes 70LA, 70LB, 70RB, and 70RA are arranged in a straight line and are parallel to each other.

According to such a configuration, a resin-encapsulated semiconductor device with a higher degree of integration than the semiconductor device of the first embodiment can be realized.
That is, the pitch between the leads (the distance between the leads) is determined in consideration of the size of the electrode and the like. Therefore, in the configuration as in the first embodiment, the size of the electrode is a dominant factor in determining the pitch between leads rather than the pitch between leads. Therefore, in the configuration of the first embodiment in which electrodes connected to adjacent leads are arranged close to each other, it is necessary to set a large pitch between the leads.

  However, if the electrodes are arranged in a zigzag manner as in the present embodiment, the distance between the electrodes connected to the adjacent leads can be increased. Therefore, when determining the pitch between the leads, the size of the electrodes is no longer dominant. It is no longer a factor. As a result, the degree of freedom in design is greatly increased, and multiple leads can be arranged at the minimum pitch. This increases the mounting density of the device and realizes a highly integrated resin-encapsulated semiconductor device. can do.

  Next, a method for manufacturing a semiconductor device in the present embodiment will be described. In this description, the omitted points can be easily understood by referring to the above description.

First, as shown in FIG. 15, a lead frame 20F ′ having a plurality of leads arranged at predetermined positions is prepared. The lead frame 20F ′ includes short leads 20LA and 20RA having a short length and long leads 20LB and 20RB having a longer length than the short lead. The short leads 20LA and the long leads 20LB are alternately arranged, and the short leads 20RA and the long leads 20RB are alternately arranged.
In the long leads 20LB and 20RB, the length from the root of each lead (the part where each lead is connected to the frame) to the tip of each lead is longer than that of the short leads 20LA and 20RA. In other words, the long leads 20LB and 20RB have a distance from one side to the tip of the semiconductor element into which the leads are introduced larger than that of the short leads 20LA and 20RA.

  In FIG. 15, only the lead corresponding to one semiconductor element is shown in the lead frame 20F ′, but actually, the same configuration is repeatedly arranged via the space S ′.

The leading ends 20LA ′, 20LB ′, 20RA ′, and 20RB ′ of the ends of the leads of the lead frame 20F ′ are bent in the vertical direction (the front side of the drawing) by press working. The vertical bending here means that the tip of the lead is bent in a direction perpendicular to the surface of the semiconductor element connected to the lead in a later step.
The length of the end portion of the lead to be bent is determined by the relationship with the thickness of the resin formed in the subsequent process, as in the first embodiment. That is, in order to expose the tip of the end to the surface of the resin, if the thickness of the resin increases, the end of the lead that is bent becomes longer, and if the thickness of the resin decreases, the end of the lead that is bent becomes Shorter. The length of the end portion of the lead to be bent is appropriately set by the designer.

Next, the insulating tapes 30LA and 30LB are bonded to the lower portions of the lead groups 20LA and 20LB, respectively, and the insulating tapes 30RA and 30RB are bonded to the lower portions of the lead groups 20RA and 20RB, respectively. These tapes have adhesiveness on both sides of the tape as introduced in the above publications.
The shape of the tape is not limited to this. For example, a shape in which the insulating tape 30 is divided into several parts is conceivable, and a shape in which the tape is disposed only under the leads is also conceivable.
Next, the semiconductor element 10 is disposed below the lead to which the insulating tape is bonded, and then the circuit forming surface of the semiconductor element 10 and the lead are bonded via the insulating tape.

  Thereafter, of the plurality of leads, a predetermined lead and a predetermined pad 40 on the semiconductor element 10 are connected to the gold wire 50. Here, an example of connection using a gold wire is shown, but it is functionally sufficient if the lead and the pad are electrically connected to each other. Therefore, other highly conductive conductors can also be used.

  Next, as in the first embodiment, a sealing resin 60 such as an epoxy resin is injected using a mold. At this time, since the mold is sandwiched so that the tips 20LA ′, 20LB ′, 20RA ′, and 20RB ′ of the end of the lead come into contact with the upper mold, the mold is injected after the sealing resin 60 is injected. When is removed, the tip of the lead is exposed as shown in FIG.

Ball-shaped solder to be the electrodes 70LA, 70LB, 70RA, 70RB is formed on the tips of the leads 20LA ′, 20LB ′, 20RA ′, 20RB ′. In the present embodiment, an electrode portion formed of ball-shaped solder is shown, but a flat electrode may be applied instead of a ball. Further, not only solder but also other metallic conductors can be used.
Thereafter, the lead frame 20F ′ on which a plurality of semiconductor devices are formed is pressed and divided into individual semiconductor devices. That is, the leads led out from the sealing resin 60 are cut to obtain a semiconductor device as shown in FIG.

According to such a manufacturing method, when bending the end portion of the lead, an existing processing method such as press working can be used. Therefore, a part of the lead is easily exposed from the surface of the resin with good controllability. Such a resin-encapsulated semiconductor device can be formed. Therefore, a resin-encapsulated semiconductor device having a high degree of integration as in this embodiment can be manufactured at low cost.

  Next, a third embodiment will be described. In the description of this embodiment, the same parts as those in the first and second embodiments described above are denoted by the same reference numerals, and the description thereof is omitted.

The characteristic configuration in this embodiment is the shape of the sealing resin.
In this embodiment, as shown in FIGS. 17 and 18, convex portions 61 </ b> L and 61 </ b> R are formed in the sealing resin around the electrode 70. The convex portions 61L and 61R are formed integrally with the sealing resin 61. The convex portions 61L and 61R are formed so as to be stepped higher from the surface of the sealing resin on which the electrode 70 is formed. Moreover, the convex part 61L and the convex part 61R are the same height.
The height of the convex portions 61L and 61R is determined in consideration of the height from the tip 20 'of the lead to the highest portion of the electrode and the melting of the electrode when mounted on the external substrate 80'.

That is, as shown in FIG. 19A, before the semiconductor device is mounted on the external substrate 80 ′, the height H1 from the tip 20 ′ of the lead to the highest portion of the electrode is the height of the convex portions 61L and 61R. It becomes higher than H2 by height H3. In other words, the height H2 of the convex portions 61L and 61R is set to a height that is lower than the height H1 of the highest portion of the electrode by a height H3.
This height H3 is a height corresponding to the melting of the electrode when the semiconductor device is mounted on the external substrate 80 ′ as shown in FIG. 19B.

  According to such a configuration, a constant height H2 is always maintained between the external substrate and the semiconductor device, and the semiconductor device can be reliably mounted on the external substrate. The convex portions formed around the electrodes also have a function of protecting the electrode portions from various forces applied to the semiconductor device during transportation when the semiconductor device is transported to a remote place and mounted on an external substrate. Have.

The convex portions 61L and 61R of the sealing resin of this embodiment are formed using a mold 91 as shown in FIG. The mold 91 includes an upper mold 91A and a lower mold 91B. The upper mold 91A is provided with a shape in which a resin is filled in portions corresponding to the above-described convex portions 61L and 61R.
The mold 91 is sandwiched as shown in FIG. 20, and a sealing resin 61 such as an epoxy resin is injected inside. At this time, since the mold 91 is sandwiched so that the tip 20 'at the end of the lead 20 and the upper mold 91A are in contact with each other, when the mold is removed after the sealing resin 61 is injected, FIG. As shown, the tip 20 'of the lead 20 is exposed.

  According to such a manufacturing method, when bending the end portion of the lead, an existing processing method such as press working can be used. Therefore, a part of the lead is easily exposed from the surface of the resin with good controllability. Such a resin-encapsulated semiconductor device can be formed. Therefore, the resin-encapsulated semiconductor device can be manufactured at low cost because it can be reliably mounted on the external substrate as in the present embodiment.

Next, a fourth embodiment will be described. In the description of this embodiment, the same parts as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is omitted.
The characteristic configuration in this embodiment is that the resin at the portion where the tip of the lead and the electrode are connected has a concave shape together with the shape of the electrode.

  In this embodiment, as shown in the cross-sectional view of FIG. 22 and the plan view excluding the electrode of FIG. 23, the recesses 62L and 62R are formed in the portion where the tip 20 ′ of the lead and the electrode 70 are connected. A sealing resin 62 is used. Lead ends 20 'are exposed at the bottoms of the recesses 62L and 62R. The electrode 70 is electrically connected to the lead tip 20 'at the bottom of the recess. In this embodiment, the concave portion is formed in a substantially semicircular shape together with the spherical electrode shape. If the shape of the electrode is a flat plate, the recess may be formed in a square shape.

The recesses 62L and 62R of the sealing resin of this embodiment are formed using a mold 92 as shown in FIG. The mold 92 includes an upper mold 92A and a lower mold 92B. The upper mold 92A is provided with a shape such that the portions corresponding to the above-described recesses 62L and 62R are not filled with resin.
The mold 92 is sandwiched as shown in FIG. 24, and a sealing resin 62 such as an epoxy resin is injected therein. At this time, since the mold 92 is sandwiched so that the tip 20 'of the lead and the upper mold 92A are in contact with each other, when the mold is removed after injecting the sealing resin 62, as shown in FIG. Lead tip 20 'is exposed from the bottom of recesses 62L and 62R.

  According to such a manufacturing method, in addition to the effects described in the above-described embodiment, the portion for fixing the electrode appears on the surface of the sealing resin, so that the position recognition when connecting the electrode and the lead is more. Simplify and improve certainty. In addition, when the electrode is formed of solder, the flux applied to the connecting portion prior to the formation of the solder has high fluidity, so the flux may flow out in the above-described embodiment, but in this embodiment, Since the flux is applied in the recess, the possibility of the flux flowing out can be significantly reduced.

Next, a fifth embodiment will be described. In the description of this embodiment, the same parts as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is omitted.
The characteristic configuration in this embodiment is that the tip of the lead is formed in an arc shape in accordance with the shape of the electrode in the fourth embodiment.

In this embodiment, as shown in the partially enlarged view of FIG. 26, the tip 21 ′ of the lead 21 is engaged with the spherical electrode 70 and formed in an arc shape.
According to such a configuration, in addition to the effects of the above-described embodiment, the reliability of the connection between the lead and the electrode is further improved. By making the tip of the lead arc-shaped, the contact area with the electrode is increased, so that the connection between them is more reliable.

Next, a sixth embodiment will be described. In the description of this embodiment, the same parts as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is omitted.
The characteristic configuration in this embodiment is that the lead of the semiconductor device in the first embodiment is led out from the side surface of the device.

In this embodiment, as shown in the cross-sectional view of FIG. 27 and the side view of FIG. 28, the extending portion 22E of the lead 22 led out from the side surface is formed. The lead 22 has one end connected to the electrode 70 and the other end led out to the outside from the side surface of the semiconductor device.
The lead extension 22E is bent in the direction opposite to the direction in which the lead tip 22 'connected to the electrode 70 is bent. Here, the lead extension 22E is bent in the direction opposite to the direction in which the lead tip 22 'is bent. However, if the lead extension 22E is bent along the side surface of the semiconductor device, the lead tip 22' is bent. The direction in which the portion 22 ′ is bent may be the same direction. As will be described later, since the probe needle is brought into contact with the extension 22E of the lead when an electrical test is performed, the configuration of the present embodiment is desirable in view of the ease of contact of the probe needle.

The electrical characteristic test of this type of semiconductor device is usually performed by bringing the probe needle of the test device into contact with an electrode (in this embodiment, the electrode 70). However, since this electrode is often made of a soft metal such as solder as described above, the electrode may be partially lost or deformed when the probe needle is brought into contact therewith.
In addition, after the semiconductor device is mounted on the external substrate, the gap between the semiconductor device and the external substrate is very narrow, so that it is very difficult to test the conduction state of each electrode. In addition, with the recent integration of semiconductor devices, this gap is becoming increasingly narrow, and electrical testing after mounting has become increasingly difficult.

  Here, if the configuration as in the present embodiment is used, the test can be performed by bringing the probe needle of the test apparatus into contact with the extended portion of the lead led out from the side surface of the semiconductor device. It is possible to prevent the electrode from being damaged or deformed due to a simple contact. Further, even after the semiconductor device is mounted on the external substrate, the lead can be extended on the side surface, so that the test can be easily performed. In particular, when a semiconductor device in which a convex portion is provided around the sealing resin as in the above-described third embodiment is mounted on an external substrate, the connection state between the electrode and the external substrate is extended as a lead. It can be easily confirmed through the part.

Since the manufacturing method of such a semiconductor device is basically the same as that of the above-described embodiment, only characteristic points will be briefly described below.
When forming the configuration of this embodiment, as shown in FIG. 29, a lead frame 22F having a lead 22 with an extending portion 22E is used.
Such a lead frame 22F is cut by pressing along the lines XX ′ and YY ′ as shown in FIG. 30 and divided into individual semiconductor devices. Thereafter, the lead extending portion 22E is bent. This cutting and bending can be performed simultaneously.
According to the configuration of this embodiment, in addition to the effects of the above-described various embodiments, an electrical test essential for a semiconductor device can be easily performed without damaging the electrodes.

Next, a seventh embodiment will be described. In the description of this embodiment, the same parts as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is omitted.
The characteristic configuration in this embodiment is that the extension portion of the lead of the semiconductor device in the sixth embodiment extends to the surface opposite to the surface on which the electrode is formed.

In this embodiment, as shown in the sectional view of FIG. 31, one end of the lead 23 is connected to the electrode 70, and the other end is led out from the side surface of the semiconductor device to form the electrode 70. It extends to the surface opposite to the surface to be formed.
According to such a configuration, a plurality of semiconductor devices can be stacked and mounted on the external substrate 80 as shown in FIG.

  Here, the upper semiconductor device is mounted on the lower semiconductor device having the electrode 70 connected to the external substrate 80. The electrode 70 of the lower semiconductor device connected to the external substrate is electrically connected to the electrode 70 of the upper semiconductor device via the lead 23. Arbitrary electrode 70 of the lower semiconductor device is electrically connected to electrode 70 of the upper semiconductor device positioned vertically above through the lead of the lower semiconductor device. That is, the same signal is given from the external substrate 80 to these two electrodes.

When forming the configuration of this embodiment, as shown in FIG. 33, a lead frame 23F having a lead 23 having an extending portion 23E is used. The extending portion 23E has a length sufficient to extend from the surface on which the electrode is formed to the opposite surface. This length can be appropriately set by the designer in consideration of the size and shape of the semiconductor device, the size of the electrode, and the like.
Such a lead frame 23F is cut by pressing along the lines XX ′ and YY ′ as shown in FIG. 33 and divided into individual semiconductor devices. Thereafter, the lead extending portion 23E is bent. This cutting and bending can be performed simultaneously.
According to the configuration of the present embodiment, in addition to the effects of the various embodiments described above, an effect that a plurality of semiconductor devices can be stacked and mounted on the external substrate is obtained.

Next, an eighth embodiment will be described. In the description of this embodiment, the same parts as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is omitted.
A characteristic configuration in this embodiment is that a recess is formed at the tip of the lead extension of the semiconductor device in the seventh embodiment.

  In this embodiment, as shown in the sectional view of FIG. 34, one end of the lead 24 is connected to the electrode 70, and the other end is led out from the side surface of the semiconductor device to form the electrode 70. It extends to the surface opposite to the surface to be formed. Further, a recess 24 ′ is formed at the tip of the lead 24. The size of the recess 24 'is determined in consideration of the fact that the electrode 70 is connected to the bottom surface of the recess 24'.

According to such a configuration, when a plurality of semiconductor devices are stacked and mounted on the external substrate 80 as shown in FIG. 35, the thickness in the vertical direction can be reduced as compared with the configuration shown in FIG. In addition, the connection between the electrode and the lead can be more reliably realized as compared with the seventh embodiment.
Such a recess at the tip of the lead is formed on the external substrate according to the configuration of the present embodiment, which is formed after the bending process of the lead frame described in the seventh embodiment or simultaneously with the bending process. In addition to the effect that a plurality of semiconductor devices can be stacked and mounted, effects such as a reduction in the thickness in the vertical direction and an improvement in the reliability of connection between the electrode and the lead can be obtained.

  While this invention has been described using illustrative embodiments, this description should not be taken in a limiting sense. Various modifications of this illustrative embodiment, as well as other embodiments of the invention, will become apparent to those skilled in the art upon reference to this description. It is therefore contemplated that the following claims will cover all such modifications or embodiments as included within the true scope of the invention.

1 is a cross-sectional view of a first embodiment of a resin-encapsulated semiconductor device according to the present invention. FIG. 2 is a plan view of the resin-encapsulated semiconductor device shown in FIG. 1. 1 is a cross-sectional view of a resin-encapsulated semiconductor device according to a first embodiment mounted on an external substrate. It is the schematic diagram which removed the electrode from the top view of FIG. It is a top view for demonstrating the manufacturing method of 1st Embodiment. It is sectional drawing for demonstrating the manufacturing method of 1st Embodiment. It is a top view for demonstrating the manufacturing method of 1st Embodiment. It is sectional drawing for demonstrating the manufacturing method of 1st Embodiment. It is sectional drawing for demonstrating the manufacturing method of 1st Embodiment. It is a top view for demonstrating the manufacturing method of 1st Embodiment. It is a top view for demonstrating the manufacturing method of 1st Embodiment. It is sectional drawing of 2nd Embodiment of the resin sealing type | mold semiconductor device in connection with this invention. FIG. 13 is a plan view of the resin-encapsulated semiconductor device shown in FIG. 12. It is the schematic diagram which removed the electrode from the top view of FIG. It is a top view for demonstrating the manufacturing method of 2nd Embodiment. It is a top view for demonstrating the manufacturing method of 2nd Embodiment. It is sectional drawing of 3rd Embodiment of the resin sealing type | mold semiconductor device in connection with this invention. FIG. 18 is a plan view of the resin-encapsulated semiconductor device shown in FIG. 17. It is the elements on larger scale which show the relationship between the convex part of sealing resin in 3rd Embodiment, and an electrode. It is sectional drawing for demonstrating the manufacturing method of 3rd Embodiment. It is a top view for demonstrating the manufacturing method of 3rd Embodiment. It is sectional drawing of 4th Embodiment of the resin-sealed semiconductor device concerning this invention. It is the schematic diagram which removed the electrode from the top view of FIG. It is sectional drawing for demonstrating the manufacturing method of 4th Embodiment. It is a top view for demonstrating the manufacturing method of 4th Embodiment. It is the elements on larger scale of the lead frame explaining a 5th embodiment. It is sectional drawing of 6th Embodiment of the resin sealing type | mold semiconductor device in connection with this invention. FIG. 28 is a side view of the resin-encapsulated semiconductor device in FIG. 27. It is a top view for demonstrating the manufacturing method of 6th Embodiment. It is a top view for demonstrating the manufacturing method of 6th Embodiment. It is sectional drawing of 7th Embodiment of the resin sealing type | mold semiconductor device in connection with this invention. FIG. 32 is a cross-sectional view illustrating a case where a plurality of semiconductor devices of FIG. 31 are mounted on an external substrate. It is a top view for demonstrating the manufacturing method of 7th Embodiment. It is sectional drawing of 8th Embodiment of the resin sealing type semiconductor device concerning this invention. FIG. 35 is a cross-sectional view illustrating a case where a plurality of semiconductor devices of FIG. 34 are mounted on an external substrate.

Explanation of symbols

10 Semiconductor device 20 Lead 30 Tape 40 Pad 50 Gold wire 60 Resin 70 Electrode 80 External substrate

Claims (6)

A semiconductor chip having a surface on which a plurality of electrode pads are formed;
A first portion disposed on the surface of the semiconductor chip; and a second portion that is bent from the first portion and extends away from the surface. Multiple leads connected together,
A sealing resin for sealing the surface of the semiconductor chip and the plurality of leads, the sealing resin having a plurality of recesses on the surface, and the second of the plurality of leads from the plurality of recesses. The sealing resin from which the tip of each part is exposed;
A plurality of conductors respectively provided on the tips of the leads exposed from the sealing resin,
The semiconductor device is characterized in that the conductor is provided apart from a side wall of a corresponding recess.   2. The semiconductor device according to claim 1, wherein the lead is fixed to the surface of the semiconductor chip by an insulating tape.   3. The semiconductor device according to claim 1, wherein the conductor is ball-shaped solder.   4. The semiconductor device according to claim 1, further comprising: a plurality of wires that connect the first portions of the plurality of leads to the corresponding electrode pads. 5.   3. The semiconductor device according to claim 2, wherein the insulating tape is divided into a plurality of parts.   6. The semiconductor device according to claim 1, wherein a tip of the lead exposed from the resin has a square shape.

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