JP2005116570A - Aligner and method of manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aligner that can highly accurately expose an object to light by satisfactorily optimizing the exposed state of the substrate based on the light-received result of a photodetector. <P>SOLUTION: The aligner exposes a substrate P disposed on the image surface side of a projection optical system PL to exposing light EL by projecting the exposing light EL upon the substrate P through the projection optical system PL and a liquid LQ. The aligner is provided with the photodetector 90 which receives the light passed through the projection optical system PL through a slit plate 75 disposed on the image surface side of the optical system PL and having a slit 71, and a temperature sensor 180 which detects the temperature information of the liquid LQ filled between the optical system PL and slit plate 75. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an exposure apparatus that exposes a substrate through a projection optical system and a liquid, and a device manufacturing method using the exposure apparatus.

Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. An exposure apparatus used in this photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and a mask pattern is transferred via a projection optical system while sequentially moving the mask stage and the substrate stage. It is transferred to the substrate. In recent years, in order to cope with higher integration of device patterns, higher resolution of the projection optical system is desired. The resolution of the projection optical system becomes higher as the exposure wavelength used is shorter and the numerical aperture of the projection optical system is larger. Therefore, the exposure wavelength used in the exposure apparatus is shortened year by year, and the numerical aperture of the projection optical system is also increasing. The mainstream exposure wavelength is 248 nm of the KrF excimer laser, but the 193 nm of the shorter wavelength ArF excimer laser is also being put into practical use. Also, when performing exposure, the depth of focus (DOF) is important as well as the resolution. The resolution R and the depth of focus δ are each expressed by the following equations.
R = k ₁ · λ / NA (1)
δ = ± k ₂ · λ / NA ² (2)
Here, λ is the exposure wavelength, NA is the numerical aperture of the projection optical system, and k ₁ and k ₂ are process coefficients. From equations (1) and (2), it can be seen that if the exposure wavelength λ is shortened and the numerical aperture NA is increased to increase the resolution R, the depth of focus δ becomes narrower.

If the depth of focus δ becomes too narrow, it becomes difficult to match the substrate surface with the image plane of the projection optical system, and the focus margin during the exposure operation may be insufficient. Therefore, as a method for substantially shortening the exposure wavelength and increasing the depth of focus, for example, a liquid immersion method disclosed in Patent Document 1 below has been proposed. In this immersion method, a space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent to form an immersion region, and the wavelength of exposure light in the liquid is 1 / n of that in air. (Where n is the refractive index of the liquid, which is usually about 1.2 to 1.6), the resolution is improved, and the depth of focus is expanded about n times.
International Publication No. 99/49504 Pamphlet

  By the way, various light receivers (light sensors) for receiving light via the projection optical system are provided on the substrate stage, and the image surface side of the projection optical system is irradiated based on the output of the light receiver. The exposure state of the exposure light and the image state formed on the image plane side of the projection optical system are measured, and the exposure state when the substrate is exposed is optimized by referring to the measurement result. Even in an immersion exposure system, these optical receivers are considered necessary for maintaining and optimizing the performance of the system, but they receive light with a liquid immersion area formed on the image plane side of the projection optical system. If the light receiving operation by the optical receiver is performed via the liquid, the measurement result based on the output of the optical receiver may be affected by the liquid.

  The present invention has been made in view of such circumstances, and in an exposure apparatus to which an immersion method is applied, the process for optimizing the exposure state based on the light reception result of the light receiver is performed satisfactorily. An object of the present invention is to provide an exposure apparatus and a device manufacturing method that can perform exposure with high accuracy.

In order to solve the above-described problems, the present invention adopts the following configuration corresponding to FIGS. 1 to 20 shown in the embodiment.
The exposure apparatus (EX) according to the present invention exposes exposure light (EL) via a projection optical system (PL) and a liquid (LQ) to a substrate (P) disposed on the image plane side of the projection optical system (PL). ) In the exposure apparatus that exposes the substrate (P) by irradiating the projection optical system via an optical member (75) having a light transmission part (71) disposed on the image plane side of the projection optical system (PL). A light receiver (90) that receives light that has passed through (PL), and a temperature detection device that detects temperature information of the liquid (LQ) filled between the projection optical system (PL) and the optical member (75). 180).

According to the present invention, since the temperature information of the liquid between the projection optical system and the optical member can be detected by the temperature detection device, the influence of the temperature of the liquid on the light received by the light receiver can be known. . For example, if the liquid temperature during receiving light by the light receiver through the optical member and the liquid temperature during exposure of the substrate are different in a state where the space between the projection optical system and the optical member is filled with liquid, When optimizing the exposure state when the substrate is subjected to immersion exposure based on the output of the photoreceiver, there may be a disadvantage that the adjustment value (correction parameter) for the optimization cannot be set accurately. If the detection result of the detection device is used, the correction parameter can be set to an optimum value even when the temperature of the liquid being received by the photoreceiver differs from the temperature of the liquid being exposed to the substrate.
Here, the optical member is not limited to a lens, but includes any member that has a light transmission part and can hold a liquid with the projection optical system.

  The device manufacturing method of the present invention uses the above-described exposure apparatus (EX). According to the present invention, exposure processing with high accuracy can be performed, and a device having desired performance can be manufactured.

  According to the present invention, in an immersion exposure apparatus, even when a liquid is filled between a projection optical system and an optical member, an accurate exposure process is performed with optimum exposure conditions set based on a light reception result of a light receiver. It can be performed.

The exposure apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic block diagram showing an embodiment of the exposure apparatus of the present invention.
In FIG. 1, an exposure apparatus EX includes a mask stage MST that supports a mask M, a substrate stage PST that supports a substrate P, and an illumination optical system IL that illuminates the mask M supported by the mask stage MST with exposure light EL. A projection optical system PL that projects and exposes the pattern image of the mask M illuminated with the exposure light EL onto the substrate P supported by the substrate stage PST, and a control device CONT that controls the overall operation of the exposure apparatus EX. A storage device MRY that is connected to the control device CONT and stores various types of information related to exposure processing is provided. Further, the exposure apparatus EX includes an aerial image measuring device 70 that is used for measuring the imaging characteristics (optical characteristics) of the projection optical system PL. The aerial image measuring device 70 includes a light receiver 90 that receives light (exposure light EL) that has passed through the projection optical system PL via a slit plate 75 having a slit portion 71 disposed on the image plane side of the projection optical system PL. I have. The slit plate 75 is provided with a temperature sensor 180 capable of detecting the temperature of the liquid.

  The exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which an immersion method is applied in order to substantially shorten the exposure wavelength to improve the resolution and substantially increase the depth of focus. A liquid supply mechanism 10 for supplying the liquid LQ to the substrate P, and a liquid recovery mechanism 20 for recovering the liquid LQ on the substrate P. While transferring at least the pattern image of the mask M onto the substrate P, the exposure apparatus EX uses a liquid LQ supplied from the liquid supply mechanism 10 to a part on the substrate P including the projection area AR1 of the projection optical system PL ( Locally) the immersion area AR2 is formed. Specifically, the exposure apparatus EX fills the liquid LQ between the optical element 60 on the front end side (image plane side) of the projection optical system PL and the surface of the substrate P, and the projection optical system PL and the substrate P The substrate P is exposed by projecting the pattern image of the mask M onto the substrate P by irradiating the exposure light EL through the liquid LQ and the projection optical system PL.

  As will be described later, during the measurement operation by the aerial image measurement device 70, the liquid LQ is filled between the projection optical system PL and the slit plate 75. Then, the slit plate 75 (light receiver 90) is irradiated with light through the liquid LQ filled between the projection optical system PL and the slit plate 75. The temperature sensor 180 detects temperature information of the liquid LQ between the projection optical system PL that is irradiating light and the slit plate 75.

  In this embodiment, the exposure apparatus EX is a scanning exposure apparatus (so-called so-called exposure apparatus EX) that exposes a pattern formed on the mask M onto the substrate P while synchronously moving the mask M and the substrate P in different directions (reverse directions) in the scanning direction. A case where a scanning stepper) is used will be described as an example. In the following description, the direction that coincides with the optical axis AX of the projection optical system PL is the Z-axis direction, the synchronous movement direction (scanning direction) between the mask M and the substrate P in the plane perpendicular to the Z-axis direction is the X-axis direction, A direction (non-scanning direction) perpendicular to the Z-axis direction and the X-axis direction is defined as a Y-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively. Here, the “substrate” includes a semiconductor wafer coated with a photoresist, which is a photosensitive material, and the “mask” includes a reticle on which a device pattern to be reduced and projected on the substrate is formed.

The illumination optical system IL converts the light beam (laser beam) LB emitted from the light source 1 into exposure light EL, and illuminates the mask M supported by the mask stage MST with the exposure light EL. As the exposure light EL emitted from the illumination optical system IL, for example, far ultraviolet light (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp, DUV light), vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm), or the like is used. In this embodiment, ArF excimer laser light is used.

  In the present embodiment, pure water is used as the liquid LQ. Pure water is not only ArF excimer laser light, but also far ultraviolet light (DUV light) such as ultraviolet emission lines (g-line, h-line, i-line) emitted from mercury lamps and KrF excimer laser light (wavelength 248 nm). Can also be transmitted.

  The light source 1 in this embodiment is an excimer laser light source that emits ArF excimer laser light (wavelength 193 nm). The controller CONT turns on / off the laser emission, the center wavelength, the spectral half width, the repetition frequency, and the like. Controlled.

  The illumination optical system IL includes a beam shaping optical system 2, an optical integrator 3, an illumination system aperture stop plate 4, relay optical systems 6 and 8, a fixed mask blind 7A, a movable mask blind 7B, a mirror 9, a condenser lens 30, and the like. ing. In this embodiment, a fly-eye lens is used as the optical integrator 3, but it may be a rod type (internal reflection type) integrator or a diffractive optical element. In the beam shaping optical system 2, the cross-sectional shape of the laser beam LB pulsed by the light source 1 is shaped so as to be efficiently incident on the optical integrator 3 provided behind the optical path of the laser beam LB. For example, a cylindrical lens and a beam expander are included. The optical integrator (fly eye lens) 3 is disposed on the optical path of the laser beam LB emitted from the beam shaping optical system 2, and is used to illuminate the mask M with a uniform illuminance distribution from a number of point light sources (light source images). A surface light source, that is, a secondary light source is formed.

  In the vicinity of the exit-side focal plane of the optical integrator 3, an illumination system aperture stop plate 4 made of a disk-shaped member is disposed. The illumination system aperture stop plate 4 has an aperture stop (small aperture) composed of a normal circular aperture, for example, an aperture stop (small aperture) for reducing the coherence factor σ value at substantially equal angular intervals. σ stop), an annular aperture stop for annular illumination (annular aperture stop), and a modified aperture stop (quadrupole illumination stop called SHRINC) in which a plurality of openings are arranged eccentrically for the modified light source method, etc. Is arranged. The illumination system aperture stop plate 4 is rotated by a drive device 31 such as a motor controlled by a control device CONT, whereby any aperture stop is selectively placed on the optical path of the exposure light EL. Be placed.

  A beam splitter 5 having a low reflectance and a high transmittance is disposed on the optical path of the exposure light EL that has passed through the illumination system aperture stop plate 4, and further, relays are provided on the rear optical path with mask blinds 7A and 7B interposed therebetween. Optical systems (6, 8) are arranged. The fixed mask blind 7A is disposed on a surface slightly defocused from the conjugate plane with respect to the pattern surface of the mask M, and a rectangular opening that defines the illumination area IA on the mask M is formed. Further, a movable mask blind 7B having an opening having a variable position and width in the direction corresponding to the scanning direction (X-axis direction) and the non-scanning direction (Y-axis direction) orthogonal thereto in the vicinity of the fixed mask blind 7A. Is arranged, and at the start and end of scanning exposure, the illumination area IA is further restricted via the movable mask blind 7B to prevent exposure of unnecessary portions. Further, in the present embodiment, the movable mask blind 7B is also used for setting an illumination area in a later-described aerial image measurement. On the other hand, on the optical path of the exposure light EL reflected by the beam splitter 5 in the illumination optical system IL, the condenser lens 32 and the sensitivity are good in the far ultraviolet region, and are high in order to detect the pulse emission of the light source 1. An integrator sensor 33 including a light receiving element such as a PIN photodiode having a response frequency is disposed.

  The operation of the illumination optical system IL configured as described above will be briefly described. The laser beam LB emitted by the pulse from the light source 1 enters the beam shaping optical system 2 where the laser beam LB is efficiently applied to the rear optical integrator 3. After the cross-sectional shape is shaped so as to be incident well, it enters the optical integrator 3. Thereby, a secondary light source is formed on the exit-side focal plane of the optical integrator 3 (the pupil plane of the illumination optical system IL). The exposure light EL emitted from the secondary light source passes through one of the aperture stops on the illumination system aperture stop plate 4 and then enters the beam splitter 5 having a high transmittance and a low reflectivity. The exposure light EL transmitted through the beam splitter 5 passes through the first relay lens 6, passes through the rectangular opening of the fixed mask blind 7 </ b> A and the movable mask blind 7 </ b> B, passes through the second relay lens 8, and is reflected by the mirror 9. The optical path can be bent vertically downward. The exposure light EL whose optical path is bent by the mirror 9 passes through the condenser lens 30 and illuminates the illumination area IA on the mask M held by the mask stage MST with a uniform illuminance distribution.

  On the other hand, the exposure light EL reflected by the beam splitter 5 is received by the integrator sensor 33 via the condenser lens 32, and the photoelectric conversion signal of the integrator sensor 33 passes through a peak hold circuit and an A / D converter (not shown). The signal is supplied to the control device CONT through the signal processing device. In the present embodiment, the measurement value of the integrator sensor 33 is used for the exposure amount control and also for the calculation of the irradiation amount with respect to the projection optical system PL. This irradiation amount is the substrate reflectivity (this is the output of the integrator sensor). It can also be obtained based on the output of a reflectance monitor (not shown), and is used to calculate the amount of change in imaging characteristics due to illumination light absorption of the projection optical system PL. In this embodiment, the dose is calculated based on the output of the integrator sensor 33 by the control device CONT at a predetermined interval, and the calculation result is stored in the storage device MRY as an irradiation history.

  The mask stage MST is movable while holding the mask M. For example, the mask M is fixed by vacuum suction (or electrostatic suction). The mask stage MST is supported in a non-contact manner on the mask base 55 via a gas bearing (air bearing) that is a non-contact bearing. It can move two-dimensionally in a plane perpendicular to AX, that is, in the XY plane, and can rotate slightly in the θZ direction. The mask stage MST can move on the mask base 55 at a scanning speed designated in the X-axis direction, and the X can only cross the entire surface of the mask M at least the optical axis AX of the projection optical system PL. It has a moving stroke in the axial direction.

  A movable mirror 41 is provided on the mask stage MST. A laser interferometer 42 is provided at a position facing the movable mirror 41. The position of the mask M on the mask stage MST in the two-dimensional direction and the rotation angle in the θZ direction (including rotation angles in the θX and θY directions in some cases) are measured in real time by the laser interferometer 42, and the measurement result is a control device. Output to CONT. The control device CONT controls the position of the mask M supported by the mask stage MST by driving the mask stage drive device MSTD based on the measurement result of the laser interferometer 42.

  The projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification β, and includes a plurality of optical elements including an optical element (lens) 60 provided at the front end portion on the substrate P side. These optical elements are supported by a lens barrel PK. In the present embodiment, the projection optical system PL is a reduction system having a projection magnification β of, for example, 1/4 or 1/5. Note that the projection optical system PL may be either an equal magnification system or an enlargement system.

  The optical element 60 at the tip of the projection optical system PL of this embodiment is held by a lens cell 62, and the lens cell 62 holding the optical element 60 and the tip of the barrel PK are connected by a connecting mechanism 61. ing. The liquid LQ in the liquid immersion area AR2 is in contact with the optical element 60. The optical element 60 is formed of meteorite. Since meteorite has a high affinity with water, the liquid LQ can be brought into close contact with almost the entire liquid contact surface 60 a of the optical element 60. That is, in the present embodiment, the liquid (water) LQ having a high affinity with the liquid contact surface 60a of the optical element 60 is supplied, and thus the adhesion between the liquid contact surface 60a of the optical element 60 and the liquid LQ. And the optical path between the optical element 60 and the substrate P can be reliably filled with the liquid LQ. The optical element 60 may be quartz having a high affinity with water. Further, the liquid contact surface 60a of the optical element 60 may be subjected to a hydrophilization (lyophilic process) to further increase the affinity with the liquid LQ.

  The substrate stage PST is movable while holding the substrate P, and includes an XY stage 53 and a Z tilt stage 52 mounted on the XY stage 53. The XY stage 53 is supported in a non-contact manner above the upper surface of the stage base 54 via a gas bearing (air bearing) which is a non-contact bearing (not shown). The XY stage 53 (substrate stage PST) is supported in a non-contact manner with respect to the upper surface of the stage base 54, and is in a plane perpendicular to the optical axis AX of the projection optical system PL by the substrate stage driving device PSTD including a linear motor and the like. That is, it can move two-dimensionally in the XY plane and can rotate in the θZ direction. A Z tilt stage 52 is mounted on the XY stage 53, and a substrate holder 51 is mounted on the Z tilt stage 52. The substrate holder 51 holds the substrate P by vacuum suction or the like. The Z tilt stage 52 is provided so as to be movable in the Z-axis direction, the θX direction, and the θY direction by an actuator described later. The substrate stage driving device PSTD including the actuator is controlled by the control device CONT. The substrate stage PST controls the focus position (Z position) and tilt angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system PL by the autofocus method and the auto leveling method. Positioning is performed in the X-axis direction and the Y-axis direction.

  An auxiliary plate 57 is provided on the substrate stage PST (substrate holder 51) so as to surround the substrate P. The auxiliary plate 57 has a flat surface substantially the same height as the surface of the substrate P held by the substrate holder 51. Even when the edge region of the substrate P is exposed, the liquid LQ can be held under the projection optical system PL by the auxiliary plate 51.

  A movable mirror 43 is provided on the substrate stage PST (Z tilt stage 52). A laser interferometer 44 is provided at a position facing the moving mirror 43. The two-dimensional position and rotation angle of the substrate P on the substrate stage PST are measured in real time by the laser interferometer 44, and the measurement result is output to the control device CONT. The controller CONT positions the substrate P supported by the substrate stage PST by driving the substrate stage driving device PSTD including a linear motor and the like based on the measurement result of the laser interferometer 44.

  Further, the exposure apparatus EX includes a focus detection system 45 that detects the position of the surface of the substrate P supported by the substrate stage PST (substrate holder 51). The focus detection system 45 includes a light projecting unit 45A that projects a detection light beam on the substrate P via the liquid LQ from an oblique direction, and a light receiving unit 45B that receives the reflected light of the detection light beam reflected by the substrate P. I have. The light reception result of the focus detection system 45 (light receiving unit 45B) is output to the control device CONT. The control device CONT can detect the position information in the Z-axis direction of the surface of the substrate P based on the detection result of the focus detection system 45. Further, by projecting a plurality of detection light beams from the light projecting unit 45A, it is possible to detect inclination information of the substrate P in the θX and θY directions. That is, the focus detection system 45 can detect the deviation of the surface of the substrate P with respect to the predetermined reference plane. As the configuration of the focus detection system 45, for example, the one disclosed in JP-A-6-283403 can be used.

  The control device CONT uses Z position driving units 56A to 56C, which will be described later, so that the focus shift becomes zero based on a defocus signal (defocus signal) from the light receiving unit 45B, for example, an S curve signal, during scanning exposure or the like. The movement of the Z tilt stage 52 in the Z-axis direction and the two-dimensional tilt (rotation in the θX and θY directions) are controlled via the substrate stage driving device PSTD including That is, the control device CONT controls the movement of the Z tilt stage 52 by using the multipoint focus detection system 45, so that the image focusing surface of the projection optical system PL substantially matches the surface of the substrate P. And auto leveling.

  Further, in the vicinity of the tip of the projection optical system PL, an off-axis type substrate alignment system 46 that detects an alignment mark on the substrate P or a reference mark formed on a reference member (not shown) provided on the substrate stage PST. Is provided. A mask alignment system 47 for detecting a reference mark provided on the reference member via the mask M and the projection optical system PL is provided in the vicinity of the mask stage MST. In the present embodiment, an image processing type alignment sensor, a so-called FIA (Field Image Alignment) system is used as the alignment system. As the configuration of the substrate alignment system 46, for example, the one disclosed in JP-A-4-65603 can be used, and the configuration of the mask alignment system 47 is disclosed in JP-A-7-176468. Can be used.

  FIG. 2 is an enlarged view showing the liquid supply mechanism 10, the liquid recovery mechanism 20, and the projection optical system PL. The projection optical system PL is held by a plurality of (here, 10) optical elements 64a to 64j held by the lens barrel PK and a lens cell 62 on the image plane side (substrate P side) of the projection optical system PL. And an optical element 60. Among the optical elements 64a to 64j constituting the projection optical system PL, some of the optical elements 64a and 64b, for example, optical elements 64a and 64b are inclined with respect to the optical axis AX direction and the XY plane by a plurality of driving elements (for example, piezo elements). It is configured to be capable of minute driving. Further, sealed first and second sealed chambers 65A and 65B are formed between the optical elements 64d and 64e and between the optical elements 64f and 64g, respectively. A clean gas such as dry air is supplied to the first and second sealed chambers 65A and 65B from a gas supply mechanism (not shown) via a pressure adjustment mechanism 66.

  In the present embodiment, the pressure adjusting mechanism 66 that adjusts the driving voltage (driving amount of the driving element) applied to each driving element 63 and the gas pressure (internal pressure) inside the first and second sealed chambers 65A and 65B, Controlled by the imaging characteristic adjusting device 67 in accordance with a command from the control unit CONT, thereby correcting the imaging characteristics of the projection optical system PL, for example, the image plane position, field curvature, distortion, magnification, and the like. It has become. Note that the image formation characteristic adjusting mechanism for adjusting the image formation characteristic may be constituted by only a movable optical element such as the optical element 64a, and the number of the movable optical elements may be arbitrary. However, in this case, since the number of movable optical elements corresponds to the types of image formation characteristics that can be corrected by the projection optical system PL, the number of movable optical elements can be determined according to the types of image formation characteristics that need to be corrected. That's fine.

  The Z tilt stage 52 is supported at three points on the XY stage 53 by three Z position driving units 56A, 56B, and 56C (however, the Z position driving unit 56C on the back side of the drawing is not shown). These Z position driving units 56A to 56C have three actuators (for example, a voice coil motor) that independently drive the respective support points on the lower surface of the Z tilt stage 52 in the optical axis direction (Z direction) of the projection optical system PL. 59A, 59B, 59C (however, the actuator 59C on the back side of the drawing in FIG. 2 is not shown) and the Z-axis direction driving amount (displacement from the reference position) by the Z position driving units 56A, 56B, 56C of the Z tilt stage ) To detect the encoder 58 </ b> A, 58 </ b> B, 58 </ b> C (note that the encoder 58 </ b> C on the back side in FIG. 2 is not shown). Here, as the encoders 58A to 58C, linear encoders such as an optical type or a capacitance type are used, for example. In this embodiment, the actuators 56A, 56B, and 56C drive the Z tilt stage 52 in the optical axis AX direction (Z-axis direction) and the tilt direction with respect to the plane orthogonal to the optical axis (XY plane), that is, the θX and θY directions. A drive device is configured. Further, the driving amount (displacement amount from the reference point) of each supporting point by the Z position driving units 56A, 56B, and 56C of the Z tilt stage 52 measured by the encoders 58A to 58C is output to the control device CONT. The control device CONT obtains the position and leveling amount (θX rotation amount, θY rotation amount) of the Z tilt stage 52 based on the measurement results of the encoders 58A to 58C.

  The liquid supply mechanism 10 supplies the liquid LQ between the projection optical system PL and the substrate P in a predetermined period including the time of exposure processing, and includes a liquid supply unit 11 that can send out the liquid LQ, and a liquid supply A supply nozzle 13 connected to the part 11 via a supply pipe 12 and supplying the liquid LQ delivered from the liquid supply part 11 onto the substrate P is provided. The supply nozzle 13 is disposed close to the surface of the substrate P. The liquid supply unit 11 includes a tank that stores the liquid LQ, a pressure pump, a temperature adjustment mechanism that can adjust the temperature of the supplied liquid LQ, and the like, and is provided on the substrate P via the supply pipe 12 and the supply nozzle 13. To supply liquid LQ. The liquid supply operation of the liquid supply unit 11 is controlled by the control device CONT, and the control device CONT can control the liquid supply amount per unit time on the substrate P by the liquid supply unit 11.

  The liquid recovery mechanism 20 recovers the liquid LQ between the projection optical system PL and the substrate P in a predetermined period including the time of the exposure process, and the recovery nozzle 23 is disposed close to the surface of the substrate P. And a liquid recovery part 21 connected to the recovery nozzle 23 via a recovery pipe 22. The liquid recovery unit 21 includes a vacuum system (a suction device) including a vacuum pump, a tank for storing the recovered liquid LQ, and the like, and its operation is controlled by the control device CONT. When the vacuum system of the liquid recovery unit 21 is driven, the liquid LQ on the substrate P is recovered via the recovery nozzle 23. As a vacuum system, a vacuum system in a factory where the exposure apparatus EX is disposed may be used without providing a vacuum pump in the exposure apparatus.

  In addition, it is preferable to provide a gas-liquid separator that separates the liquid LQ sucked from the recovery nozzle 23 and the gas in the middle of the recovery pipe 22, specifically, between the recovery nozzle 23 and the vacuum system. When the liquid LQ on the substrate P is sucked and collected, there is a possibility that the liquid recovery unit (vacuum system) 21 collects the liquid LQ together with the surrounding gas (air). By separating the liquid and gas recovered from the nozzle 23, it is possible to prevent the occurrence of inconveniences such as the liquid LQ flowing into the vacuum system and the vacuum system failing. The liquid LQ recovered by the liquid recovery unit 21 is discarded or cleaned, for example, and returned to the liquid supply unit 11 or the like for reuse.

  The liquid supply mechanism 10 and the liquid recovery mechanism 20 are supported separately from the projection optical system PL. Thereby, the vibration generated in the liquid supply mechanism 10 and the liquid recovery mechanism 20 is not transmitted to the projection optical system PL.

  FIG. 3 is a plan view showing the positional relationship between the liquid supply mechanism 10 and the liquid recovery mechanism 20 and the projection area AR1 of the projection optical system PL. The projection area AR1 of the projection optical system PL has a rectangular shape (slit shape) elongated in the Y-axis direction, and three supply nozzles 13A to 13C are arranged on the + X side so as to sandwich the projection area AR1 in the X-axis direction. The two collection nozzles 23A and 23B are arranged on the −X side. The supply nozzles 13 </ b> A to 13 </ b> C are connected to the liquid supply unit 11 via the supply pipe 12, and the recovery nozzles 23 </ b> A and 23 </ b> B are connected to the liquid recovery part 21 via the recovery pipe 22. Further, the supply nozzles 16A to 16C and the recovery nozzles 26A and 26B are arranged in a positional relationship in which the supply nozzles 13A to 13C and the recovery nozzles 23A and 23B are rotated by approximately 180 °. The supply nozzles 13A to 13C and the recovery nozzles 26A and 26B are alternately arranged in the Y axis direction, the supply nozzles 16A to 16C and the recovery nozzles 23A and 23B are alternately arranged in the Y axis direction, and the supply nozzles 16A to 16C are The recovery nozzles 26 </ b> A and 26 </ b> B are connected to the liquid recovery part 21 via the recovery pipe 25.

  FIG. 4 is a schematic configuration diagram showing an aerial image measuring device 70 used for measuring the imaging characteristics (optical characteristics) of the projection optical system PL. The aerial image measuring device 70 includes a light receiver 90 that receives light that has passed through the projection optical system PL via a slit plate 75 having a slit portion 71 disposed on the image plane side of the projection optical system PL. The slit plate 75 is provided on the Z tilt stage 52 on the image plane side of the projection optical system PL. The light receiver 90 receives an optical element 76 disposed near the slit plate 75 inside the Z tilt stage 52, a mirror 77 that bends an optical path of light that has passed through the optical element 76, and light that passes through the mirror 77. An optical element 78, a light transmission lens 79 that sends the light that has passed through the optical element 78 to the outside of the Z tilt stage 52, a mirror 80 that is provided outside the Z tilt stage 52 and bends the optical path of the light from the light transmission lens 79; A light receiving lens 81 that receives light that has passed through the mirror 80 and a light sensor (light receiving element) 82 that includes a photoelectric conversion element that receives light via the light receiving lens 81 are provided.

  The slit plate 75 includes a light shielding film 72 made of chromium or the like provided at the center of the upper surface of the glass plate member 74 having a rectangular shape in plan view, and the light shielding film 72 around the light shielding film 72, that is, the upper surface of the glass plate member 74. A reflective film 73 made of aluminum or the like provided in a portion other than the above and a slit portion 71 which is an opening pattern formed in a part of the light shielding film 72 are provided. In the slit portion 71, a glass plate member 74 that is a transparent member is exposed, and light can pass through the slit portion 71. The temperature sensor 180 that detects the temperature information of the liquid LQ filled between the optical element 60 at the tip of the projection optical system PL and the slit plate 75 is located in the region where the reflective film 73 is provided on the upper surface of the slit plate 75. It is attached.

  A convex portion 83 is provided at a position adjacent to the substrate holder 51 on the upper surface of the Z tilt stage 52, and an opening portion 84 is provided above the convex portion 83. The slit plate 75 is attachable to and detachable from the opening 84 of the convex portion 83, and is fitted from above in a state of closing the opening 84.

  As a forming material of the glass plate member 74, synthetic quartz or meteorite having good transparency to ArF excimer laser light or KrF excimer laser light is used. The refractive index of synthetic quartz for ArF excimer laser light is about 1.56, and the refractive index for KrF excimer laser light is about 1.51.

  The optical element 76 is disposed below the slit portion 71 inside the Z tilt stage 52 and is held by a holding member 85. The holding member 85 holding the optical element 76 is attached to the inner wall surface 83 </ b> A of the convex portion 83. The light that has passed through the optical element 76 disposed inside the Z tilt stage 52 passes through the optical element 78 after its optical path is bent by the mirror 77. The light that has passed through the optical element 78 is sent out of the Z tilt stage 52 by a light transmission lens 79 that is fixed to the + X side wall of the Z tilt stage 52. The light transmitted to the outside of the Z tilt stage 52 by the light transmitting lens 79 is guided to the light receiving lens 81 by the mirror 80. The light receiving lens 81 and the optical sensor 82 disposed above the light receiving lens 81 are housed in a case 86 while maintaining a predetermined positional relationship. The case 86 is fixed in the vicinity of the upper end portion of the support column 88 provided on the upper surface of the stage base 54 via an attachment member 87.

  The mirror 77, the optical element 78, the light transmission lens 79, and the like are detachable from the Z tilt stage 52. A support column 88 that supports the case 86 that houses the light receiving lens 81 and the optical sensor 82 is detachable from the stage base 54.

  As the optical sensor 82, a photoelectric conversion element (light receiving element) capable of detecting weak light with high accuracy, for example, a photomultiplier tube (PMT, photomultiplier tube) or the like is used. The photoelectric conversion signal from the optical sensor 82 is sent to the control device CONT via the signal processing device.

  FIG. 5 is a diagram illustrating a state in which the imaging characteristics of the projection optical system PL are measured using the aerial image measurement device 70. As shown in FIG. 5, when measuring the imaging characteristics of the projection optical system PL, the liquid supply mechanism 10 and the liquid recovery mechanism 20 are used with the projection optical system PL and the slit plate 75 facing each other. The liquid LQ is filled between the optical element 60 on the front end side (image plane side) of the projection optical system PL and the slit plate 75. The light (exposure light EL) that passes through the projection optical system PL and the liquid LQ constitutes the aerial image measurement device 70 in a state where the liquid LQ is filled between the optical element 60 of the projection optical system PL and the slit plate 75. The slit plate 75 is irradiated. The surface position information of the upper surface 75A of the slit plate 75 at this time can be detected using the focus detection system 45.

  6 is an enlarged cross-sectional view of the main part showing the vicinity of the slit plate 75 and the optical element 76 disposed in the convex portion 83 of the aerial image measuring device 70, and FIG. 7 is a plan view of the slit plate 75 viewed from above. It is. In FIG. 6, the light receiver 90 is illustrated in a simplified manner. Among the plurality of optical elements and members constituting the light receiver 90, the optical element disposed at the position closest to the slit plate 75 on the optical path of light. Only the element 76 and the optical sensor 82 that receives the light that has passed through the optical element 76 are shown. In FIG. 6, the liquid LQ is filled between the optical element 60 and the slit plate 75 at the tip of the projection optical system PL. In the aerial image measurement device 70, the liquid LQ is also filled between the slit plate 75 and the light receiver 90.

  Here, in the following description, the immersion area formed by the liquid LQ filled between the projection optical system PL and the slit plate 75 is referred to as “first immersion area LA1”, the slit plate 75, and the light receiver 90. The liquid immersion area formed by the liquid LQ filled with the (optical element 76) is appropriately referred to as “second liquid immersion area LA2”.

  A temperature sensor 180 provided on the upper surface of the slit plate 75 detects temperature information of the liquid LQ in the first immersion area LA1 filled between the optical element 60 at the tip of the projection optical system PL and the slit plate 75. To do. The temperature sensor 180 is provided on the inner surface of the first immersion area LA1 on the upper surface of the slit plate 75, that is, at a position in contact with the liquid LQ filled between the projection optical system PL and the slit plate 75. In the present embodiment, the temperature sensor 180 is attached to a region of the upper surface of the slit plate 75 where the reflective film 73 is provided. As shown in FIG. 7, both sides of the X-axis direction (scanning direction) sandwich the slit portion 71. Are provided respectively. The slit portion 71 is a rectangular (rectangular) slit whose longitudinal direction is the Y-axis direction, and has a predetermined width 2D.

  The liquid LQ in the second immersion area LA2 is formed by the lower surface of the slit plate 75 fitted in the opening 84 of the convex portion 83 and a plurality of optical elements (optical members) arranged on the optical path of the light receiver 90. Among them, it is filled with the optical element 76 disposed at the position closest to the slit plate 75. The optical element 76 is held by a holding member 85 attached to the inner wall surface 83 </ b> A of the convex portion 83 at a position below the slit plate 75, and the liquid LQ is applied to the slit plate 75, the holding member 85, and the optical element 76. The enclosed space SP is filled. In the present embodiment, the optical element 76 is constituted by a plano-convex lens, and is disposed with its flat surface facing upward. The inner bottom surface 85A of the holding member 85 and the upper surface (flat surface) 76A of the optical element 76 are substantially flush with each other. In addition, the holding member 85 is formed in a substantially upward U shape in a sectional view, and the outer surface 85B of the holding member 85 and the inner wall surface 83A of the convex portion 83 are in close contact with each other. A sealing member 91 such as an O-ring is provided between 85C and the slit plate 75. Thereby, the inconvenience that the liquid LQ filled in the space SP leaks to the outside is prevented.

  The holding member 85 holding the slit plate 75 and the optical element 76 can be attached to and detached from the inner wall surface 83 </ b> A of the convex portion 83. When the holding member 85 is attached, the holding member 85 holding the optical element 76 is inserted into the convex portion 83 from the opening 84 of the convex portion 83 (at this time, the slit plate 75 is not attached). The holding member 85 and the inner wall surface 83A of the convex portion 83 are fixed by a fixing member. Next, the slit plate 75 is fitted into the opening 84. On the other hand, when removing the holding member 85, the slit plate 75 is removed from the opening 84, and then the holding member 85 is pulled out through the opening 84.

  The exposure apparatus EX includes a liquid supply apparatus 100 that supplies the liquid LQ to the space SP between the slit plate 75 and the optical element 76 of the light receiver 90, and a liquid recovery apparatus 104 that recovers the liquid LQ in the space SP. It has. A supply channel 102 connected to the space SP is formed on the + X side wall of the convex portion 83 and the holding member 85, and a recovery channel 106 connected to the space SP is formed on the −X side wall. . Further, one end of a supply pipe 101 is connected to the liquid supply apparatus 100, and the other end of the supply pipe 101 is connected to a supply flow path 102 via a joint 103. One end of a recovery pipe 105 is connected to the liquid recovery apparatus 104, and the other end of the recovery pipe 105 is connected to a recovery flow path 106 via a joint 107. Valves 101A and 105A for opening and closing the flow paths are provided in the middle of the supply pipe 101 and the collection pipe 105, respectively. The operations of the liquid supply device 100, the liquid recovery device 104, and the valves 101A and 105A are controlled by the control device CONT, and the control device CONT controls these to supply and recover the liquid LQ to and from the space SP. Fill SP with liquid LQ.

  When measuring the aerial image (projected image), the control device CONT moves the substrate stage PST so that the projection optical system PL and the slit plate 75 face each other (that is, the state shown in FIG. 5). Then, the liquid supply mechanism 10 and the liquid recovery mechanism 20 are used to fill the liquid LQ between the optical element 60 at the tip of the projection optical system PL and the slit plate 75. In parallel (or before or after), the control device CONT fills the liquid LQ between the optical element 76 of the light receiver 90 and the slit plate 75 using the liquid supply device 100 and the liquid recovery device 104. .

  At the time of measuring the aerial image, a mask M provided with a measurement mark to be described later is supported on the mask stage MST. The control device CONT illuminates the mask M with the exposure light EL by the illumination optical system IL. Light (exposure light EL) that passes through the measurement mark, the projection optical system PL, and the liquid LQ in the first immersion area LA1 is applied to the slit plate 75. The light that has passed through the slit portion 71 of the slit plate 75 enters the optical element 76 through the liquid LQ in the second immersion area LA2.

  Since the numerical aperture NA of the projection optical system is improved by the liquid LQ in the first immersion area LA1 between the projection optical system PL and the slit plate 75, the optical element of the light receiver 90 is changed according to the numerical aperture NA of the projection optical system PL. Unless the numerical aperture NA of 76 is also improved, the optical element 76 may not be able to capture (all) the light that has passed through the projection optical system PL, and will not be able to receive the light satisfactorily. Therefore, when the numerical aperture NA of the projection optical system PL is improved by filling the liquid LQ between the projection optical system PL and the slit plate 75 as in this embodiment, the slit plate 75 and the light receiver 90 are used. By filling the liquid LQ between the optical element 76 and the optical element 76 of the light receiver 90 to improve the numerical aperture NA, the optical element 76 of the light receiver 90 improves the light through the projection optical system PL. Can be captured.

  The optical element 76 condenses the light that has passed through the second immersion area LA2. The light condensed by the optical element 76 is guided to the outside of the substrate stage PST via the mirror 77, the optical element 78, and the light transmission lens 79. The light guided to the outside of the substrate stage PST is bent in the optical path by the mirror 80, received by the optical sensor 82 through the light receiving lens 81, and a photoelectric conversion signal corresponding to the amount of light received from the optical sensor 82. (Light quantity signal) is output to the control device CONT via the signal processing device. The control device CONT obtains image formation characteristic information of the projection optical system PL, which is one piece of performance information of the exposure apparatus EX, based on the output of the optical sensor 82 (light receiver 90).

  During the irradiation of light (exposure light EL) to the slit plate 75 (light receiver 90) through the liquid LQ in the first immersion area LA1 in order to measure the imaging characteristics of the projection optical system PL, the temperature sensor 180 Temperature information of the liquid LQ in the one liquid immersion area LA1 is detected. That is, the temperature sensor 180 detects the temperature information of the liquid LQ in the first liquid immersion area LA1 during the aerial image measurement operation by the aerial image measurement device 70. The detection result of the temperature sensor 180 is output to the control device CONT. The control device CONT performs the immersion exposure processing on the substrate P based on the detection result of the temperature sensor 180 and the imaging characteristic information of the projection optical system PL obtained based on the output of the light receiver 90.

  Hereinafter, an aerial image measurement operation and an exposure operation using the aerial image measurement device 70 will be described. At the time of aerial image measurement, as the mask M, a mask dedicated to aerial image measurement or a mask in which a dedicated measurement mark is formed on a device manufacturing mask used for manufacturing a device is used. In place of these masks, a mask stage MST may be provided with a fixed mark plate (fiducial mark plate) made of the same glass material as the mask, and a measurement mark formed on the mark plate. .

  The mask M includes a line-and-space (L / S) mark whose ratio (duty ratio) between the width of the line portion having a periodicity in the X-axis direction and the width of the space portion (duty ratio) at a predetermined position is 1: 1. The mark PMx and the measurement mark PMy made of an L / S mark having a periodicity ratio of 1: 1 in the Y-axis direction are formed close to each other. These measurement marks PMx and PMy are composed of line patterns having the same line width. Further, as shown in FIG. 8A, the slit plate 75 constituting the aerial image measuring device 70 includes a slit portion 71x having a predetermined width 2D extending in the Y-axis direction and a slit having a predetermined width 2D extending in the X-axis direction. The portion 71y is formed in a predetermined positional relationship as shown in FIG. In this manner, the slit plate 75 is actually formed with a plurality of slit portions 71x, 71y, etc., but these slit portions are shown as the slit portions 71 in FIGS. Yes.

  For example, when measuring the aerial image of the measurement mark PMx, the control device CONT drives the movable mask blind 7B shown in FIG. 1 via a blind drive device (not shown), and the illumination area of the exposure light EL is a portion of the measurement mark PMx. Is limited to a predetermined area including In this state, light emission of the light source 1 is started by the control device CONT, and when the exposure light EL is irradiated onto the measurement mark PMx, the light (exposure light EL) diffracted and scattered by the measurement mark PMx is caused by the projection optical system PL. Refracted and a spatial image (projected image) of the measurement mark PMx is formed on the image plane of the projection optical system PL. At this time, as shown in FIG. 8A, the substrate stage PST is at a position where the spatial image PMx ′ of the measurement mark PMx is formed on the + X side (or −X side) of the slit portion 71x on the slit plate 75. It shall be provided.

  Under the instruction of the control device CONT, when the substrate stage PST is driven in the + X direction as indicated by the arrow Fx in FIG. 8A by the substrate stage driving device PSTD, the slit portion 71x is aerial image. Scanning is performed in the X-axis direction with respect to PMx ′. During this scanning, light (exposure light EL) that passes through the slit portion 71x passes through a light receiving optical system in the substrate stage PST (Z tilt stage 52), a mirror 80 outside the substrate stage PST, and a light receiving lens 81, and a light sensor 82. And the photoelectric conversion signal is supplied to the signal processing device. In the signal processing device, the photoelectric conversion signal is subjected to predetermined processing, and a light intensity signal corresponding to the aerial image PMx ′ is supplied to the control device CONT. At this time, in the signal processing apparatus, a signal obtained by standardizing the signal from the optical sensor 82 by the signal of the integrator sensor 33 shown in FIG. 1 in order to suppress the influence due to the variation in the emission intensity of the exposure light EL from the light source 1. Is supplied to the control device CONT. FIG. 8B shows an example of a photoelectric conversion signal (light intensity signal) obtained at the time of the aerial image measurement.

  When measuring the aerial image of the measurement mark PMy, the substrate stage PST is provided at a position where the aerial image of the measurement mark PMy is formed on the + Y side (or -Y side) of the slit portion 71y on the slit plate 75. The photoelectric conversion signal (light intensity signal) corresponding to the aerial image of the measurement mark PMy can be obtained by performing measurement by the slit scan method similar to the above.

  In the measurement for obtaining the imaging characteristic adjustment information and the like, first, in the initial adjustment, the optical elements 64a and 64b of the projection optical system PL are driven one by one, and the first and second sealed chambers 65A and 65B are also driven. The image plane position (focus) of the projection optical system PL and other predetermined imaging characteristics (for example, field curvature, magnification, distortion, coma aberration, spherical aberration, etc.) Any one of them) is measured using the aerial image measuring device 70 as described later, and the amount of change in image formation characteristics in the optical elements 64a and 64b and the first and second sealed chambers 65A and 65B is obtained.

  Hereinafter, a method for detecting the best focus position (image plane position) of the projection optical system PL will be described as an example of the imaging characteristic measurement operation. In this case, it is assumed that the normal stop of the illumination system aperture stop plate 4 is selected as a precondition, and the normal illumination condition is set as the illumination condition. For detection of the best focus position, for example, a mask M on which a measurement mark PMx (or PMy) formed of an L / S pattern having a line width of 1 μm and a duty ratio of 50% is used. First, the mask M is loaded onto the mask stage MST by a loader device (not shown). Next, the control device CONT moves the mask stage MST via the mask stage driving device MSTD so that the measurement mark PMx on the mask M substantially coincides with the optical axis of the projection optical system PL. Next, the control device CONT drives and controls the movable mask blind 7B so that the exposure light EL is irradiated only on the measurement mark PMx portion, thereby defining the illumination area. In this state, the control device CONT irradiates the mask M with the exposure light EL, scans the substrate stage PST in the X-axis direction, and uses the aerial image measurement device 70 to scan the measurement mark PMx. Aerial image measurement is performed by the slit scan method. At this time, the control device CONT changes the position of the slit plate 75 in the Z-axis direction (that is, the position of the Z tilt stage 52) at a predetermined step pitch via the substrate stage driving device PSTD, and the space of the measurement mark PMx. Image measurement is repeated a plurality of times, and the light intensity signal (photoelectric conversion signal) for each time is stored in the storage device MRY. Note that the change in the position of the slit plate 75 in the Z-axis direction is performed by controlling the actuators 59A, 59B, and 59C based on the measurement values of the encoders 58A, 58B, and 58C of the Z tilt stage 52. And the control apparatus CONT each carries out the Fourier transformation of the some light intensity signal (photoelectric conversion signal) obtained by the said repetition, and calculates | requires the contrast which is an amplitude ratio of each primary frequency component and zeroth-order frequency component. Then, the control device CONT detects the Z position of the Z tilt stage 52 (that is, the position of the slit plate 75 in the Z-axis direction) corresponding to the light intensity signal that maximizes the contrast, and this position is projected into the projection optical system PL. Is determined as the image plane position. Since the contrast changes sensitively according to the focus position (defocus amount), the image plane position of the projection optical system PL can be measured (determined) accurately and easily. Based on the obtained image plane position, the control device CONT adjusts the focus so that the image plane position via the projection optical system PL and the liquid LQ matches the detection origin (detection reference plane) of the focus detection system 45. Perform calibration. Thereby, thereafter, the focus detection system 45 positions a predetermined surface (for example, the surface of the substrate P or the surface of the slit plate 75) on the substrate stage PST at a position (image surface position) optically conjugate with the reference surface of the mask M. be able to.

  There may be a situation where the liquid temperature in the first immersion area LA1 during the measurement of the image plane position and the liquid temperature in the immersion area AR2 during the immersion exposure for the substrate P performed in the process after the measurement are different from each other. It is done. In this case, since the refractive index of the liquid LQ in the first liquid immersion area LA1 and the refractive index of the liquid LQ in the liquid immersion area AR2 are different from each other, the aerial image measurement device 70 causes the projection optical system PL and the liquid LQ to be changed. Even if the image plane position is obtained, the image plane position may change when the substrate P is subjected to immersion exposure.

  Therefore, the control device CONT immerses the substrate P on the basis of the measurement result of the aerial image measurement device 70 and the temperature information of the liquid LQ in the first immersion region LA1 during the image plane position measurement by the aerial image measurement device 70. The imaging characteristics of the projection optical system PL at the time of exposure are adjusted, and the substrate P is subjected to immersion exposure.

Specifically, the temperature sensor 180 detects the temperature of the liquid LQ in the first immersion area LA1 during the measurement of the image plane position of the projection optical system PL (step SA1 in FIG. 9).
Further, as described above, the control device CONT obtains the image plane position via the projection optical system PL and the liquid LQ based on the output of the light receiver 90 (aerial image measurement device 70) (step SA2).

The control device CONT adjusts the image plane position for matching the image plane position through the projection optical system PL and the liquid LQ and the detection reference plane of the focus detection system 45 when the substrate P is subjected to immersion exposure. Is obtained (step SA3).
Here, the adjustment amount for adjusting the image plane position refers to the drive amount of the optical elements 64a and 64b of the projection optical system PL and the first and second sealed chambers 65A and 65B, which are adjusted by the imaging characteristic adjustment device 67. Includes adjustment amount of internal pressure.

  On the other hand, the temperature detection result of the first immersion area LA1 detected by the temperature sensor 180 in step SA1 is output to the control device CONT. Based on the detection result of the temperature sensor 180, the controller CONT corrects the adjustment amount obtained in step SA3 in consideration of the change in the image plane position due to the difference in liquid temperature. Thus, the control device CONT determines the adjustment amount by the imaging characteristic adjusting device 67 based on the temperature information detected by the temperature sensor 180.

  Here, in the storage device MRY, for example, adjustment of driving amounts of the optical elements 64a and 64b of the projection optical system PL and internal pressures of the first and second sealed chambers 65A and 65B, which are obtained in advance by experiments or simulations, for example. The relationship between the amount and the change amount (variation amount) of various image formation characteristics of the projection optical system PL (that is, image formation characteristic adjustment information) is stored. Furthermore, the storage device MRY stores the relationship between the liquid temperature and the image plane position via the projection optical system PL and the liquid LQ, which is obtained in advance by experiments or simulations.

For example, data as shown in the graph of FIG. 10 is stored in the storage device MRY in advance. In FIG. 10, the horizontal axis represents the liquid temperature in the first immersion area LA1 during aerial image measurement, and the vertical axis represents the image plane position adjustment amount (correction amount). Thus, the storage device MRY includes the liquid temperature in the first immersion area LA1 at the time of the aerial image measurement and a plurality of liquid temperature information (A, B, C) in the immersion area AR2 during the immersion exposure of the substrate P. ) And an adjustment amount (correction amount) for correcting the image plane position. The control device CONT corrects the obtained adjustment amount based on the storage information of the storage device MRY, determines the corrected adjustment amount as an adjustment amount by the imaging characteristic adjustment device 67, and executes focus calibration ( Step SA4).
That is, based on the determined adjustment amount, the projection optical system performs driving of the optical elements 64a and 64b of the projection optical system PL and adjustment of at least one of the internal pressures of the first and second sealed chambers 65A and 65B. The position of the image plane through the PL and the liquid LQ and the detection reference plane of the focus detection system 45 are matched. Thus, after the focus calibration is completed, the control device CONT drives the substrate stage PST via the substrate stage driving device PSTD so that the projection optical system PL and the substrate P loaded on the substrate stage PST are opposed to each other. To do. At this time, a mask M on which a device manufacturing pattern is formed is loaded on the mask stage MST. Then, the control device CONT drives the liquid supply unit 11 of the liquid supply mechanism 10 and supplies a predetermined amount of liquid LQ per unit time onto the substrate P via the supply pipe 12 and the supply nozzle 13. In addition, the control device CONT drives the liquid recovery unit (vacuum system) 21 of the liquid recovery mechanism 20 in accordance with the supply of the liquid LQ by the liquid supply mechanism 10, and places the unit per unit time via the recovery nozzle 23 and the recovery pipe 22. A fixed amount of liquid LQ is recovered. Thereby, an immersion area AR2 of the liquid LQ is formed between the optical element 60 at the tip of the projection optical system PL and the substrate P.

  Then, the control device CONT illuminates the mask M with the exposure light EL by the illumination optical system IL, and projects the pattern image of the mask M onto the substrate P through the projection optical system PL and the liquid LQ. Here, when performing the exposure process on the substrate P, the control device CONT uses the focus detection system 45 to detect a shift between the reference plane (image plane) of the focus detection system 45 and the surface of the substrate P. Based on the detection result, the optical elements 64a and 64b of the projection optical system PL are driven, the internal pressures of the first and second sealed chambers 65A and 65B are adjusted, and an image through the projection optical system PL and the liquid LQ is obtained. Exposure processing is performed while adjusting the surface position (step SA5).

  At the time of scanning exposure, a part of the pattern image of the mask M is projected onto the projection area AR1, and the mask M moves in the −X direction (or + X direction) at the velocity V with respect to the projection optical system PL. Then, the substrate P moves in the + X direction (or -X direction) at a speed β · V (β is the projection magnification) via the substrate stage PST. Then, after the exposure of one shot area is completed, the next shot area is moved to the scanning start position by stepping the substrate P, and thereafter, the exposure process for each shot area is sequentially performed by the step-and-scan method. In the present embodiment, the liquid LQ is set to flow in the same direction as the movement direction of the substrate P in parallel with the movement direction of the substrate P. That is, when scanning exposure is performed by moving the substrate P in the scanning direction (−X direction) indicated by the arrow Xa (see FIG. 3), the supply pipe 12, the supply nozzles 13A to 13C, the recovery pipe 22, and the recovery nozzle The liquid LQ is supplied and recovered by the liquid supply mechanism 10 and the liquid recovery mechanism 20 using 23A and 23B. That is, when the substrate P moves in the −X direction, the liquid LQ is supplied from the supply nozzle 13 (13A to 13C) between the projection optical system PL and the substrate P, and the recovery nozzle 23 (23A, 23B). ), The liquid LQ on the substrate P is collected, and the liquid LQ flows in the −X direction so as to fill the space between the optical element 60 at the tip of the projection optical system PL and the substrate P. On the other hand, when scanning exposure is performed by moving the substrate P in the scanning direction (+ X direction) indicated by the arrow Xb (see FIG. 3), the supply pipe 15, the supply nozzles 16A to 16C, the recovery pipe 25, and the recovery nozzle 26A. , 26B, the liquid LQ is supplied and recovered by the liquid supply mechanism 10 and the liquid recovery mechanism 20. That is, when the substrate P moves in the + X direction, the liquid LQ is supplied from the supply nozzle 16 (16A to 16C) between the projection optical system PL and the substrate P, and the recovery nozzle 26 (26A, 26B). As a result, the liquid LQ on the substrate P is collected, and the liquid LQ flows in the + X direction so as to fill the space between the optical element 60 at the tip of the projection optical system PL and the substrate P. In this case, for example, the liquid LQ supplied via the supply nozzle 13 flows so as to be drawn between the optical element 60 and the substrate P as the substrate P moves in the −X direction. Even if the supply energy of the (liquid supply unit 11) is small, the liquid LQ can be easily supplied between the optical element 60 and the substrate P. Then, by switching the direction in which the liquid LQ flows according to the scanning direction, the liquid LQ is moved between the optical element 60 and the substrate P when the substrate P is scanned in either the + X direction or the −X direction. And a high resolution and a wide depth of focus can be obtained.

  Here, in order to match the image plane position (detection reference plane of the focus detection system 45) via the projection optical system PL and the liquid LQ with the surface of the substrate P based on the detection result of the focus detection system 45, image formation is performed. In the above description, the substrate P is exposed via the projection optical system PL and the liquid LQ while adjusting the image plane position (imaging characteristic) of the projection optical system PL using the characteristic adjusting device 67. The position adjustment (focus adjustment) in the Z-axis direction of the substrate stage PST that supports the substrate P and the tilt adjustment (rolling adjustment) in the θX direction may be performed. Of course, the image formation characteristic adjustment by the image formation characteristic adjustment device 67 and the position adjustment of the substrate stage PST can be performed in combination. When the projection area AR1 has a large width in the X-axis direction, tilt adjustment (pitching adjustment) in the θY direction is performed during scanning exposure in order to match the positions of the image plane and the surface of the substrate P. Also good.

  As described above, even if the liquid temperature of the first liquid immersion area LA1 and the liquid temperature of the liquid immersion area AR2 are different from each other, the aerial image measurement device via the projection optical system PL and the liquid LQ. Using the image plane position information measured at 70, the image plane position via the projection optical system PL and the liquid LQ can be matched with the surface of the substrate P.

In the present embodiment, the method (slit scanning method) for scanning the slit portion 71 (slit plate 75) in a predetermined direction in the XY plane when measuring the image plane position of the projection optical system PL has been described. A spatial image of a measurement mark such as an isolated line mark is formed in the vicinity of the image plane of the projection optical system PL, and the slit portion 71 (slit plate 75) is relatively scanned with respect to this spatial image in the optical axis AX direction (Z-axis direction). As described above, the slit plate 75 (Z tilt stage 52) may be scanned along the Z-axis direction within a predetermined stroke range centered on the image plane position. Then, the image plane position is obtained based on the light intensity signal (peak value) at that time. In this case, it is preferable to use a measurement mark having a size and shape such that the spatial image of the measurement mark substantially matches the shape of the slit portion 71 (71x or 71y) on the image plane. If such aerial image measurement is performed, a light intensity signal as shown in FIG. 11 can be obtained. In this case, by directly finding the position of the peak of the signal waveform of the light intensity signal, the Z position at that point may be set as the image plane position Z ₀ , or the light intensity signal is sliced at a predetermined slice level line SL, the Z position of the mid point of the two intersections of the intensity signal and the slice level line SL may be an image plane position Z _0. In any case, this method can improve the throughput because the image plane position can be detected only by scanning the slit plate 75 once in the Z-axis direction.

  Note that when the projection image (aerial image) of the measurement mark is measured by the slit scan method, the light transmission lens 79 moves with respect to the light receiving lens 81 and the optical sensor 82. Therefore, in the aerial image measuring device 70, the size of each lens and the mirror 80 is set so that all the light passing through the light transmitting lens 79 moving within a predetermined range is incident on the light receiving lens 81.

  In the aerial image measurement device 70, since the optical sensor 82 is provided at a predetermined position outside the substrate stage PST, the measurement accuracy of the laser interferometer 44 due to the heat generated by the optical sensor 82 can be affected. It is suppressed. Further, since the outside and the inside of the substrate stage PST are not connected by a light guide or the like, the driving accuracy of the substrate stage PST is affected as in the case where the outside and the inside of the substrate stage PST are connected by a light guide. There is nothing. Of course, when the influence of heat or the like can be ignored or eliminated, the optical sensor 82 may be provided inside the substrate stage PST. That is, some of the plurality of optical elements and light receiving elements constituting the light receiver 90 may be provided on the substrate stage PST, or all may be provided on the substrate stage PST.

  In the present embodiment, the liquid LQ is filled and filled in the space SP between the slit plate 75 and the optical element 76 by using the liquid supply device 100 and the liquid recovery device 104 to supply and recover the liquid LQ. However, without using the liquid supply apparatus 100 and the liquid recovery apparatus 104, for example, a configuration in which the liquid LQ is filled in the space SP at the time of manufacturing the exposure apparatus EX is possible. In this case, for example, the slit plate 75 may be removed from the convex portion 83 (Z tilt stage 52), and the liquid LQ in the space SP may be periodically replaced. On the other hand, by supplying and recovering the liquid LQ using the liquid supply apparatus 100 and the liquid recovery apparatus 104, the space SP can be always filled with a fresh (clean) liquid LQ. For example, when the holding member 85 holding the slit plate 75 and the optical element 76 is removed from the convex portion 83 (Z tilt stage 52), the liquid recovery device 104 collects the liquid LQ in the space SP, and then the slit plate 75 or By removing the holding member 85 holding the optical element 76, the attaching / detaching operation can be performed without leaking the liquid LQ.

  By the way, in this embodiment, the control device CONT obtains the imaging characteristics of the projection optical system PL based on the output of the light receiver 90 (aerial image measuring device 70), and adjusts the imaging characteristics of the projection optical system PL. The amount is corrected based on the detection result of the temperature sensor 180. On the other hand, as shown in FIG. 12, the control device CONT detects the liquid temperature in the first immersion area LA1 during the measurement of the image plane position by the aerial image measurement device 70 (step SB1), and aerial image measurement. The output (measurement result) of the device 70 (light receiver 90) is corrected based on the detection result of the temperature sensor 180 (step SB2), and based on the corrected measurement result of the aerial image measurement device 70 (light receiver 90). The image plane position through the projection optical system PL and the liquid LQ is obtained (step SB3), and the image plane position through the projection optical system PL and the liquid LQ at the time of immersion exposure is determined based on the obtained image plane position. Focus calibration is performed by obtaining an adjustment amount for adjusting the image plane position for matching the detection reference plane of the focus detection system 45 (step SB4), and the focus calibration is performed. The substrate P for the liquid immersion exposure process while adjusting the image plane position via the projection optical system PL and the liquid LQ based on the focus detection system 45 detected result after Shon may be (step SB5) as. In step SB2, when the measurement result of the aerial image measurement device 70 is corrected based on the detection result of the temperature sensor 180, the liquid temperature, the projection optical system PL, and the liquid LQ stored in the storage device MRY are also stored. The correction is performed based on the relationship with the image plane position.

  In the above description, the image formation characteristic adjustment device 67 is used so that the image plane through the projection optical system PL and the liquid LQ coincides with the detection reference plane of the focus detection system 45 during the focus calibration. Although the image plane position is adjusted, the detection reference plane of the focus detection system 45 may be changed (adjusted), or both of them may be adjusted.

  Further, without performing focus calibration in step SA4 of the flowchart of FIG. 9 or step SB4 of the flowchart of FIG. 12, the image plane position adjustment using the imaging characteristic adjusting device 67 is performed based on the detection result of the focus detection system 45. Alternatively, when the position of the substrate P surface is adjusted by the substrate stage PST, a corresponding amount may be offset to the adjustment amount obtained in step SA4 of the flowchart of FIG. 9 or step SB4 of the flowchart of FIG.

  In addition, during the image plane position measurement operation (during the image formation characteristic measurement operation) by the aerial image measurement device 70, the liquid LQ for forming the first immersion area LA1 is supplied based on the detection result of the temperature sensor 180. The liquid supply mechanism 10 may adjust the temperature of the supplied liquid LQ. Here, the liquid supply mechanism 10 (liquid supply unit 11) includes a temperature adjustment mechanism capable of adjusting the temperature of the liquid LQ to be supplied. Further, in the storage device MRY, the temperature information of the liquid LQ in the immersion area AR2 filled between the projection optical system PL and the substrate P during immersion exposure of the substrate P is stored in advance by, for example, experiments or simulations. Has been. The liquid supply mechanism 10 adjusts the temperature of the liquid LQ supplied between the projection optical system PL and the slit plate 75 during image plane position measurement based on the storage information of the storage device MRY. Specifically, the liquid supply mechanism 10 is based on the temperature information of the liquid LQ in the immersion area AR2 between the projection optical system PL and the substrate P during immersion exposure of the substrate P stored in the storage device MRY. Thus, the temperature of the liquid LQ supplied between the projection optical system PL and the slit plate 75 is adjusted so as to be the same temperature as the liquid temperature of the liquid immersion area AR2. By doing so, the arithmetic processing based on the detection result of the temperature sensor 180 as in the above embodiment becomes unnecessary. On the other hand, in the configuration in which the temperature of the liquid LQ supplied from the liquid supply mechanism 10 is adjusted, it is necessary to set a waiting time until the temperature of the supplied liquid LQ reaches a desired temperature. Instead of adjusting the temperature of the liquid LQ supplied between the system PL and the slit plate 75, the measurement result of the light receiver 90 or the obtained imaging is obtained based on the detection result of the temperature sensor 180 as in the above embodiment. The time efficiency can be improved by correcting the characteristics by arithmetic processing.

  Incidentally, the temperature sensor 180 only needs to be provided at a position in contact with the liquid LQ in the first immersion area LA1 filled between the projection optical system PL and the slit plate 75. As shown in FIG. The configuration may be provided at the image plane side end of the projection optical system PL. In the example shown in FIG. 13, the temperature sensor 180 is provided on the lower surface of the lens cell 62 that holds the optical element 60 arranged on the image plane side of the projection optical system PL. Even with such a configuration, it is possible to detect the temperature information of the liquid LQ in the first liquid immersion area LA1 during the imaging characteristic measurement operation in the aerial image measurement device 70. Further, by providing the temperature sensor 180 at the image plane side end of the projection optical system PL, the temperature sensor 180 is used to immerse the substrate P between the projection optical system PL and the substrate P during the immersion exposure. The temperature information of the liquid LQ in the area AR2 can also be detected.

  Further, when a situation occurs in which the liquid temperature in the liquid immersion area AR2 varies (changes) during the liquid immersion exposure of the substrate P, the image plane position through the projection optical system PL and the liquid LQ varies, but the control is performed. The apparatus CONT is based on the temperature detection result of the liquid LQ in the liquid immersion area AR2 by the temperature sensor 180 provided at the image plane side end of the projection optical system PL. Variations in position and the like are corrected using the imaging characteristic adjusting device 67, and the substrate P is exposed while adjusting the image plane position via the projection optical system PL and the liquid LQ to match the surface of the substrate P. it can. In this case, the storage device MRY stores in advance the relationship between the liquid temperature of the liquid immersion area AR2 and the image plane position via the projection optical system PL and the liquid LQ, for example, by experiment or simulation. The apparatus CONT adjusts the image plane position (imaging characteristic) of the projection optical system PL using the imaging characteristic adjusting apparatus 67 based on the storage information of the storage device MRY. Even in this case, the position of the substrate stage PST is adjusted in order to match the position of the image plane through the projection optical system PL and the liquid LQ and the surface of the substrate PST, or the image plane by the imaging characteristic adjusting device 67 is adjusted. Position adjustment and position adjustment of the substrate stage PST may be used in combination.

In the above embodiment, the image plane position correction is described as an example of the imaging characteristic correction of the projection optical system PL. In the following, aberration correction will be described as the imaging characteristic correction.
Hereinafter, as an example of the imaging characteristic measurement operation, a method for detecting the image plane shape (field curvature) of the projection optical system PL will be described. In detecting the curvature of field, a mask M1 in which measurement marks PM _{1 to} PM _n having the same dimensions and the same period as the measurement marks PMx are formed in the pattern area PA as shown in FIG. 14 as an example. After the mask M1 is loaded on the mask stage MST, the controller CONT, as measurement marks PM _k in the center of the mask M1 is substantially coincident on the optical axis of the projection optical system PL, via the mask stage driving unit MSTD To move the mask stage MST. That is, positioning of the mask M1 to the reference point is performed. When positioning to this reference point is performed, it is assumed that all of the measurement marks PM _{1 to} PM _n are located in the field of view of the projection optical system PL. Next, the control device CONT drives and controls the movable mask blind 7B so that the exposure light EL is irradiated only on the measurement mark PM ₁ portion, thereby defining the illumination area. In this state, the control unit CONT radiates the exposure light EL on the mask M1, aerial image measurement and the projection optical system PL of the measurement mark PM ₁ by using the spatial image-measuring device 70 by the slit scan method in the same manner as described above The best focus position is detected, and the result is stored in the storage device MRY. Defining the detection of the best focus position with measurement marks PM ₁ ends, the control unit CONT, the illumination area of the movable mask blind 7B controls and drives so that the exposure light EL is irradiated only to the mark PM ₂ parts Measurement To do. In this state, detection is performed best focus position of the same spatial image measurement and the projection optical system of the measurement mark PM ₂ slit scan method PL, and stores the result in the storage device MRY. Thereafter, similarly to the above, the control device CONT repeatedly performs aerial image measurement and detection of the best focus position of the projection optical system PL for the measurement marks PM _{3 to} PM _n while changing the illumination area. Then, the control unit CONT, the best focus position obtained by these Z _1, Z 2, _..., by performing a predetermined statistical process based on Z _n, to calculate the curvature of the projection optical system PL .

Further, when detecting the spherical aberration of the projection optical system PL, a mask M2 shown in FIG. 15 is used. Two measurement marks PM1 and PM2 are formed in the pattern region PA of the mask M2 shown in FIG. 15 at a substantially central position in the Y-axis direction and separated by a predetermined distance in the X-axis direction. The measurement mark PM1 is an L / S pattern having the same dimensions and the same period as the measurement mark PMx described above. In addition, the measurement mark PM2 is an L / S lined up in the X-axis direction at a period (for example, about 1.5 to 2 times the period (mark pitch) of the measurement mark PM1) of the line pattern having the same dimensions as the measurement mark PMx. It is a pattern. After loading the mask M2 onto the mask stage MST, the control device CONT uses the mask stage MST via the mask stage driving device MSTD so that the measurement mark PM1 on the mask M2 substantially coincides with the optical axis of the projection optical system PL. To move. Next, the control device CONT drives and controls the movable mask blind 7B so as to define the illumination area so that the exposure light EL is irradiated only on the measurement mark PM1 portion. In this state, the control device CONT irradiates the mask M2 with the exposure light EL, and performs the aerial image measurement and projection optical system PL of the measurement mark PM1 using the aerial image measurement device 70 by the slit scan method in the same manner as described above. The best focus position is detected, and the result is stored in the storage device MRY. When the detection of the best focus position using the measurement mark PM1 is completed, the control device CONT moves the mask stage MST in the −X direction via the mask stage driving device MSTD so that the exposure light EL is irradiated to the measurement mark PM2. Move a predetermined distance. In this state, similarly to the above, the aerial image measurement of the measurement mark PM2 and the best focus position of the projection optical system PL are detected by the slit scan method, and the result is stored in the storage device MRY. Based on the difference between the best focus positions Z ₁ and Z ₂ obtained from these, the control device CONT calculates the spherical aberration of the projection optical system PL by calculation.

Further, when detecting the magnification and distortion of the projection optical system PL, a mask M3 shown in FIG. 16 is used. A total of five measurement marks BM, for example, 120 μm square (30 μm square on the slit plate 75 at a projection magnification of ¼) at the center and four corners of the pattern area PA of the mask M3 shown in FIG. _{1 to} BM ₅ are formed. After loading the mask M3 on the mask stage MST, the controller CONT, so that the center of the measurement mark BM ₁ existing in the center of the mask M3 is, substantially coincides with the optical axis of the projection optical system PL, the mask stage drive The mask stage MST is moved via the apparatus MSTD. That is, the mask M3 is positioned to the reference point. It is assumed that all the measurement marks BM _{1 to} BM ₅ are located in the field of view of the projection optical system PL in the state where the positioning to the reference point has been performed. Next, the control unit CONT, the exposure light EL to define an illumination region of the movable mask blind 7B controls and drives so as to irradiate only a large rectangular area portion slightly from the measurement mark BM ₁ comprising measuring marks BM ₁ . In this state, the control device CONT irradiates the mask M3 with the exposure light EL. As a result, a spatial image of the measurement mark BM ₁ , that is, a square mark image of approximately 30 μm square is formed. In this state, the control device CONT performs the aerial image measurement of the measurement mark BM ₁ using the aerial image measurement device 70 while scanning the substrate stage PST in the X-axis direction via the substrate stage driving device PSTD, and by the measurement The obtained light intensity signal is stored in the storage device MRY. Next, based on the obtained light intensity signal, the control device CONT obtains the imaging position of the measurement mark BM ₁ by, for example, a known phase detection method or edge detection method. Here, as a method of phase detection, for example, the product of a primary frequency component (which can be regarded as a sine wave) obtained by Fourier transforming a light intensity signal and a sine wave serving as a reference of the same frequency. For example, the sum of one period is obtained, and the sum of, for example, one period of the product of the primary frequency component and the cosine wave serving as the reference of the same period is obtained. Then, the phase difference of the primary frequency component with respect to the reference signal is obtained by obtaining the arc sine of the quotient obtained by dividing the obtained sum, and the measurement mark BM ₁ is obtained based on this phase difference. A general method of obtaining the X position x ₁ of the _first can be used. As an edge detection method, an edge detection method using a slice method that calculates the position of the edge of the aerial image corresponding to each photoelectric conversion signal based on the intersection of the light intensity signal and a predetermined slice level. Can be used. Next, the control device CONT measures the aerial image of the measurement mark BM ₁ using the aerial image measurement device 70 while scanning the substrate stage PST in the Y-axis direction, and stores the light intensity signal obtained by the measurement in the storage device. Store in MRY. Then, the Y position y ₁ of the measurement mark BM _{1 is obtained} by a method such as phase detection similar to the above. Then, the control unit CONT based on the coordinate position of the obtained measurement mark _{BM 1 (x 1, y 1} ), to correct the positional deviation of the optical axis center of the mask M3. When the correction of the positional deviation of the mask M3 is completed, the control unit CONT, the movable mask blind 7B so that the exposure light EL is irradiated only to the larger rectangular area portion slightly from the measurement mark BM ₂ comprising measuring marks BM ₂ Is controlled to define the illumination area. In this state, as described above, the aerial image measurement and XY position measurement of the measurement mark BM ₂ are performed by the slit scanning method, and the result is stored in the storage device MRY. Thereafter, the control device CONT repeatedly performs the measurement of the aerial image and the measurement of the XY position for the measurement marks BM _{3 to} BM ₅ while changing the illumination area. Based on the coordinate values (x ₂ , y ₂ ), (x ₃ , y ₃ ), (x ₄ , y ₄ ), (x ₅ , y ₅ ) of the measurement marks BM _{2 to} BM ₅ obtained thereby. By performing a predetermined calculation, the control device CONT calculates at least one of the magnification and distortion of the projection optical system PL.

  The procedure for measuring the field curvature, spherical aberration, magnification, and distortion using the aerial image measurement device 70 has been described above as an example. In addition, the aerial image measurement device 70 can measure other imaging characteristics such as coma using a predetermined measurement mark. Details of aerial image measurement are disclosed in, for example, Japanese Patent Application Laid-Open No. 2002-14005.

  Further, also when each of the above aberrations is measured by the aerial image measurement device 70, the temperature of the liquid LQ in the first liquid immersion area LA1 is detected using the temperature sensor 180. The control device CONT corrects the measurement result of the aerial image measurement device 70 (light receiver 90) based on the detection result of the temperature sensor 180, or the connection of the projection optical system PL obtained using the aerial image measurement device 70. Correct the image characteristics. Also in this case, the storage device MRY includes, for example, driving amounts of the optical elements 64a and 64b of the projection optical system PL and internal pressures of the first and second sealed chambers 65A and 65B, which are obtained in advance by experiments or simulations. And the relationship (namely, image formation characteristic adjustment information) between the adjustment amount and the change amount (variation amount) of various image formation characteristics (aberration) of the projection optical system PL. Further, the storage device MRY stores in advance the relationship between the liquid temperature and the imaging characteristics (aberration information) via the projection optical system PL and the liquid LQ. The control device CONT determines the adjustment amount (correction amount) of the imaging characteristic adjustment device 67 for correcting the aberration of the projection optical system PL based on the storage information of the storage device MRY.

  In each of the above embodiments, an example in which the optical member (slit plate) 75 and the light receiver 90 are applied to the aerial image measurement device 70 that measures the imaging characteristics of the projection optical system PL has been described. That is, in each of the above embodiments, the control device CONT obtains the imaging characteristics of the projection optical system PL as the performance information of the exposure device EX based on the output of the light receiver 90. On the other hand, the performance information of the exposure apparatus EX includes a light irradiation amount and illuminance distribution (illuminance unevenness) via the projection optical system PL. For example, as shown in FIG. 17, on the substrate stage PST, in addition to the aerial image measuring device 70, light irradiation amount information via the projection optical system PL is measured, for example, disclosed in Japanese Patent Laid-Open No. 11-16816. There are also provided an irradiation amount sensor (illuminance sensor) 160 and an uneven illuminance sensor 170 as disclosed in, for example, Japanese Patent Application Laid-Open No. 57-117238. The present invention can also be applied to.

  FIG. 18 is a schematic diagram of the dose sensor 160. The irradiation amount sensor 160 measures the irradiation amount (illuminance) of exposure light irradiated on the image plane side of the projection optical system PL, and includes an upper plate 163 provided on the Z tilt stage 52, and an upper plate 163 thereon. And an optical sensor 164 that receives light that has passed through the plate 163. The upper plate 163 includes a glass plate member 162 and a light transmission amount adjustment film 161 provided on the upper surface of the glass plate member 162. Inside the first immersion area LA1 on the upper surface of the upper plate 163, a temperature sensor 180 for detecting the temperature of the liquid LQ in the first immersion area LA1 is provided. The light transmission amount adjusting film 161 is made of, for example, a chromium film, has a predetermined light transmittance, and is provided over the entire upper surface of the glass plate member 162. By providing the light transmission amount adjusting film 161 to reduce the amount of light incident on the optical sensor 164, inconveniences such as damage and saturation to the optical sensor 164 caused by irradiation with an excessive amount of light are prevented. . The dose sensor 160 performs a measurement operation at a predetermined timing, for example, when the mask M is replaced.

  Then, when measuring the irradiation amount of the exposure light EL that has passed through the projection optical system PL by the irradiation amount sensor 160, the projection optical system with the projection optical system PL and the upper plate 163 facing each other as in the above-described embodiment. The liquid LQ is supplied between the PL and the upper plate 163 to form the first liquid immersion area LA1, and the liquid LQ is supplied between the upper plate 163 and the optical sensor 164 to set the second liquid immersion area LA2. The upper plate 163 is irradiated with the exposure light EL through the projection optical system PL and the liquid LQ in the first immersion area LA1. The temperature sensor 180 detects the liquid temperature of the first immersion area LA1 at this time.

  FIG. 19 is a schematic diagram of the illuminance unevenness sensor 170. The illuminance unevenness sensor 170 measures the illuminance (intensity) of the exposure light irradiated to the image plane side through the projection optical system PL at a plurality of positions, and the exposure light irradiated to the image plane side of the projection optical system PL. An illuminance unevenness (illuminance distribution) is measured, and includes an upper plate 174 provided on the Z tilt stage 52, and an optical sensor 175 that receives light that has passed through a bin hole portion 171 provided on the upper plate 174. It has. The upper plate 174 is obtained by providing a thin film 172 containing a light-shielding material such as chromium on the surface of a glass plate member 173, patterning the thin film 172, and providing a pinhole portion 171 at the center. A temperature sensor 180 that detects the temperature of the liquid LQ in the first liquid immersion area LA1 is provided on the upper surface of the upper plate 174 inside the first liquid immersion area LA1.

  When measuring the illuminance distribution with the illuminance unevenness sensor 170, the projection optical system PL and the upper plate 174 of the illuminance unevenness sensor 170 face each other, and the space between the projection optical system PL and the upper plate 174 is filled with the liquid LQ. The space between the upper plate 174 and the optical sensor 175 is also filled with the liquid LQ. Then, the pinhole portion 171 is sequentially moved at a plurality of positions in the irradiation region (projection region) irradiated with the exposure light EL. The temperature sensor 180 detects the liquid temperature of the first immersion area LA1 at this time.

  Furthermore, the present invention can be applied to a sensor (light receiver) that can be attached to and detached from the substrate stage PST (Z stage 51) as disclosed in Japanese Patent Laid-Open Nos. 11-238680 and 2000-97616. The temperature sensor 180 may be provided at an appropriate position where the temperature of the liquid LQ can be detected.

  As described above, the liquid LQ in the present embodiment is composed of pure water. Pure water has an advantage that it can be easily obtained in large quantities at a semiconductor manufacturing factory or the like, and has no adverse effect on the photoresist, optical element (lens), etc. on the substrate P. In addition, pure water has no adverse effects on the environment, and since the impurity content is extremely low, it can be expected to clean the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. .

  The refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be approximately 1.44. When ArF excimer laser light (wavelength 193 nm) is used as the light source of the exposure light EL, On the substrate P, the wavelength is shortened to 1 / n, that is, about 134 nm, and a high resolution can be obtained. Furthermore, since the depth of focus is enlarged by about n times, that is, about 1.44 times compared with that in the air, the projection optical system PL can be used when it is sufficient to ensure the same depth of focus as that in the air. The numerical aperture can be further increased, and the resolution is improved in this respect as well.

  In this embodiment, the optical element 60 is attached to the tip of the projection optical system PL. However, as an optical element attached to the tip of the projection optical system PL, optical characteristics of the projection optical system PL, such as aberration (spherical aberration, coma) It may be an optical plate used for adjustment of aberration and the like. Alternatively, it may be a plane parallel plate that can transmit the exposure light EL.

The liquid LQ of the present embodiment is water, but may be a liquid other than water. For example, when the light source of the exposure light EL is an F ₂ laser, the F ₂ laser light does not pass through water. In this case, as the liquid LQ, a fluorine-based liquid such as fluorine-based oil or perfluorinated polyether (PFPE) that can transmit the F ₂ laser light may be used. In addition, as the liquid LQ, the liquid LQ is transmissive to the exposure light EL, has a refractive index as high as possible, and is stable with respect to the photoresist applied to the projection optical system PL and the surface of the substrate P (for example, Cedar). Oil) can also be used.

  In the above embodiments, the shape of the nozzle described above is not particularly limited. For example, the liquid LQ may be supplied or recovered with two pairs of nozzles on the long side of the projection area AR1. In this case, the supply nozzle and the recovery nozzle may be arranged side by side so that the liquid LQ can be supplied and recovered from either the + X direction or the −X direction. .

  The substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  In the above-described embodiment, an exposure apparatus that locally fills the space between the projection optical system PL and the substrate P with a liquid is used. However, the exposure as disclosed in Japanese Patent Laid-Open No. 6-124873. A liquid tank having a predetermined depth is formed on an immersion exposure apparatus for moving a stage holding a target substrate in a liquid tank, or a stage as disclosed in JP-A-10-303114, The present invention can also be applied to an immersion exposure apparatus that holds a substrate.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise. The present invention can also be applied to a step-and-stitch type exposure apparatus that partially transfers at least two patterns on the substrate P.

  Further, according to the present invention, as disclosed in JP-A-10-163099, JP-A-10-214783, JP-T 2000-505958, etc., substrates to be processed such as wafers are separately placed. The present invention can also be applied to a twin stage type exposure apparatus having two stages that can move independently in the XY directions.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto the substrate P. An exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD) ) Or an exposure apparatus for manufacturing a reticle, a mask or the like.

  When linear motors (see USP5,623,853 or USP5,528,118) are used for the substrate stage PST and the mask stage MST, the air levitation type using an air bearing and Lorentz force or It is preferable to use either a magnetic levitation type using a reactance force. Each stage PST, MST may be a type that moves along a guide, or may be a guideless type that does not have a guide.

  As a driving mechanism for each stage PST, MST, a planar motor that drives each stage PST, MST by electromagnetic force with a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil facing each other is provided. It may be used. In this case, either one of the magnet unit and the armature unit may be connected to the stages PST and MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stages PST and MST.

  As described in JP-A-8-166475 (USP 5,528,118), the reaction force generated by the movement of the substrate stage PST is not transmitted to the projection optical system PL, but mechanically using a frame member. You may escape to the floor (ground). As described in JP-A-8-330224 (US S / N 08 / 416,558), a frame member is used so that the reaction force generated by the movement of the mask stage MST is not transmitted to the projection optical system PL. May be mechanically released to the floor (ground).

  The exposure apparatus EX of the present embodiment is manufactured by assembling various subsystems including the constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Is done. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 20, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a base material of the device. Manufacturing step 203, substrate processing step 204 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, packaging process) 205, inspection step 206, etc. It is manufactured after.

It is a schematic block diagram which shows one Embodiment of the exposure apparatus of this invention. It is a schematic block diagram which shows the vicinity of the front-end | tip part of a projection optical system, a liquid supply mechanism, and a liquid collection | recovery mechanism. It is a top view which shows the positional relationship of the projection area | region of a projection optical system, a liquid supply mechanism, and a liquid collection | recovery mechanism. It is a schematic block diagram which shows one Embodiment of the light receiver which concerns on this invention. It is a schematic diagram which shows the state which the light receiver is performing measurement operation. It is a principal part enlarged view which shows one Embodiment of the temperature detection apparatus which concerns on this invention. It is a top view of the optical member of FIG. It is a figure which shows an example of the light reception signal light-received with the light receiver. It is a flowchart figure which shows one Embodiment of the procedure which adjusts an image surface position. It is a schematic diagram which shows the memory | storage information memorize | stored in the memory | storage device. It is a figure which shows an example of the light reception signal light-received with the light receiver. It is a flowchart figure which shows one Embodiment of the procedure which adjusts an image surface position. It is a principal part enlarged view which shows one Embodiment of the temperature detection apparatus which concerns on this invention. It is a figure which shows an example of the mask used when measuring the image formation characteristic of a projection optical system. It is a figure which shows an example of the mask used when measuring the image formation characteristic of a projection optical system. It is a figure which shows an example of the mask used when measuring the image formation characteristic of a projection optical system. It is a top view which shows the state by which the several light receiver is arrange | positioned on the substrate stage. It is a principal part enlarged view which shows another embodiment of the optical member and light receiver which concern on this invention. It is a principal part enlarged view which shows another embodiment of the optical member and light receiver which concern on this invention. It is a flowchart figure which shows an example of the manufacturing process of a semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Liquid, 10 ... Liquid supply mechanism, 13 ... Supply nozzle, 20 ... Liquid recovery mechanism,
23 ... Recovery nozzle, 67 ... Imaging characteristic adjusting device, 70 ... Aerial image measuring device,
74 ... Glass plate member (optical member), 75 ... Slit plate (optical member), 76 ... Optical element,
82 ... Optical sensor (light receiving element), 90 ... Light receiver, 100 ... Liquid supply device,
104 ... Liquid recovery device, 162 ... Glass plate member (optical member),
163 ... Upper plate (optical member), 173 ... Glass plate member (optical member),
174 ... Upper plate (optical member), 180 ... Temperature sensor (temperature detection device),
CONT ... control device (control system), EL ... exposure light, EX ... exposure device,
LA1 ... first immersion area, LA2 ... second immersion area, LQ ... liquid, MRY ... storage device,
P ... substrate, PL ... projection optical system, PST ... substrate stage (substrate holding member)

Claims (19)

In an exposure apparatus that exposes the substrate by irradiating exposure light to the substrate disposed on the image plane side of the projection optical system via the projection optical system and the liquid,
A light receiver that receives light that has passed through the projection optical system via an optical member that has a light transmission portion disposed on the image plane side of the projection optical system;
An exposure apparatus comprising: a temperature detection device configured to detect temperature information of a liquid filled between the projection optical system and the optical member.   Light is applied to the light receiver through a liquid filled between the projection optical system and the optical member, and the temperature detection device detects temperature information of the liquid being irradiated with light. The exposure apparatus according to claim 1.   The exposure apparatus according to claim 1, wherein the temperature detection device is provided at a position in contact with a liquid filled between the projection optical system and the optical member.   The exposure apparatus according to claim 1, wherein the temperature detection device is provided on the optical member. A control system for obtaining performance information of the exposure apparatus based on the output of the light receiver;
The exposure apparatus according to claim 1, wherein the control system performs an exposure process on the substrate based on a detection result of the temperature detection device and the performance information.   6. The exposure apparatus according to claim 5, wherein the performance information includes imaging characteristic information of the projection optical system. An imaging characteristic adjusting device for adjusting the imaging characteristic of the projection optical system based on the obtained imaging characteristic information;
The exposure apparatus according to claim 6, wherein the control system determines an adjustment amount by the imaging characteristic adjustment device based on temperature information detected by the temperature detection device.   8. The exposure apparatus according to claim 7, wherein the substrate is exposed through the projection optical system and the liquid while adjusting the imaging characteristics of the projection optical system based on the determined adjustment amount.   The exposure apparatus according to claim 6, wherein the control system corrects a measurement result of the light receiver based on a detection result of the temperature detection device.   The exposure apparatus according to claim 6, wherein the control system corrects the obtained imaging characteristics based on a detection result of the temperature detection apparatus. A storage device that stores in advance the relationship between the liquid temperature and the imaging characteristics on the image plane side via the projection optical system and the liquid;
The exposure apparatus according to claim 7, wherein the determination is performed based on information stored in the storage device.   The exposure apparatus according to any one of claims 7 to 11, wherein the correction of the imaging characteristics includes at least one of aberration correction and image plane position correction. A liquid supply mechanism for supplying a liquid between the projection optical system and the optical member;
The exposure apparatus according to claim 1, wherein the liquid supply mechanism adjusts the temperature of the liquid to be supplied based on a detection result of the temperature detection apparatus. A storage device preliminarily storing temperature information of the liquid filled between the projection optical system and the substrate during exposure of the substrate;
The exposure apparatus according to claim 13, wherein the liquid supply mechanism adjusts a temperature of a liquid to be supplied based on information stored in the storage device.   The temperature detection device is provided at an image plane side end of the projection optical system, and the temperature detection device detects temperature information of a liquid between the projection optical system and the substrate during exposure of the substrate. The exposure apparatus according to any one of claims 1 to 14, wherein   16. The exposure according to claim 15, wherein the substrate is exposed while adjusting the imaging characteristics of the projection optical system based on the detection result of the temperature information of the liquid between the projection optical system and the substrate. apparatus.   The exposure apparatus according to claim 1, wherein a liquid is filled between the light receiver and the optical member. A substrate holding member that is movable while holding the substrate;
The exposure apparatus according to claim 1, wherein the light receiver is provided on the substrate holding member. A device manufacturing method, wherein a device is manufactured using the exposure apparatus according to any one of claims 1 to 18.

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