JP2005116483A5

JP2005116483A5 -

Info

Publication number: JP2005116483A5
Application number: JP2003352803A
Authority: JP
Filing date: 2003-10-10
Publication date: 2006-10-19

Claims

A light emitting device including a light emitting element having an anode, a layer containing an organic compound, and a cathode on a substrate having an insulating surface,
The light-emitting element is covered with a multilayer film in which inorganic insulating films and films containing vinyl polymer, acetylene polymer, or diene polymer are alternately laminated.

2. The light emitting device according to claim 1 , wherein the inorganic insulating film is a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film .

2. The light emitting device according to claim 1, wherein the inorganic insulating film is a film containing carbon as a main component.

2. The inorganic insulating film according to claim 1, wherein the inorganic insulating film includes a first inorganic insulating film and a second inorganic insulating film made of silicon nitride or silicon nitride oxide, and the first inorganic insulating film and the second inorganic insulating film. A light-emitting device having a three-layer structure including a carbon-based film formed therebetween.

5. The light emitting device according to claim 3, wherein the film containing carbon as a main component is a DLC film, a CNx film, or an amorphous carbon film.

6. The light-emitting device according to claim 3, wherein the film containing carbon as a main component contains Ar.

5. The light-emitting device according to claim 4, wherein each of the first inorganic insulating film, the second inorganic insulating film, and the film containing carbon as a main component contains Ar.

A light emitting device including a light emitting element having an anode, a layer containing an organic compound, and a cathode on a substrate having an insulating surface,
The light emitting element includes a first inorganic insulating film, a film containing a vinyl polymer, an acetylene polymer, or a diene polymer formed on the first inorganic insulating film, and a second inorganic insulating film formed on the film. A light-emitting device which is covered with a film .

The vinyl polymer according to any one of claims 1 to 8 , wherein the vinyl polymer is ethylene, propylene, styrene, substituted styrene, vinyl ether, vinyl thioether, vinyl ester, halogenated vinyl, vinylidene halide, vinyl carbazole, acrylic acid derivative, methacrylic acid. A light-emitting device, which is a derivative, isobutylene, acrylonitrile, or vinylcyclopropane.

An electronic apparatus using the light emitting device according to claim 1.

The electronic device according to claim 10, a video camera, a digital camera, a navigation system, a personal computer, portable information terminals, mobile computers, cellular phones, portable game machines, it is a sound reproducing apparatus or image reproducing apparatus, Features electronic equipment .

A method for manufacturing a light-emitting device including a light-emitting element having an anode, a layer containing an organic compound, and a cathode over a substrate having an insulating surface,
Forming a first inorganic insulating film covering the light emitting element by sputtering or PCVD;
The vinyl polymer, a film containing an acetylene polymer or diene polymer, formed by plasma polymerization on the first inorganic insulating film,
The method for manufacturing a light emitting device, wherein a second inorganic insulating film is formed by sputtering or PCVD method on the membrane containing the vinyl polymer, acetylene polymer or diene polymer.

A method for manufacturing a light-emitting device including a light-emitting element having an anode, a layer containing an organic compound, and a cathode over a substrate having an insulating surface,
Forming a first inorganic insulating film covering the light emitting element by sputtering or PCVD;
A film containing a vinyl polymer, an acetylene polymer, or a diene polymer is formed on the first inorganic insulating film by a physical vapor deposition method,
A method for manufacturing a light-emitting device, wherein a second inorganic insulating film is formed by a sputtering method or a PCVD method over a film containing the vinyl polymer, acetylene polymer, or diene polymer.

14. The method according to claim 12 , wherein the first inorganic insulating film, the film containing the vinyl polymer, the acetylene polymer, or the diene polymer, and the second inorganic insulating film are continuously formed without being exposed to the atmosphere. A method for manufacturing a light-emitting device.

In any one of claims 12 to 14, wherein the first inorganic insulating film, a silicon nitride film, a silicon nitride oxide film, a silicon oxide film, DLC film, CNx films, Moshiku monolayer of the amorphous carbon film, or A method for manufacturing a light-emitting device, which is a stacked structure of these.

16. The method according to claim 12, wherein the second inorganic insulating film is a silicon nitride film, a silicon nitride oxide film, a silicon oxide film, a DLC film, a CNx film, an amorphous carbon film, or a single layer thereof. A method for manufacturing a light-emitting device, which is a stacked structure.

In any one of claims 12 to 16, wherein the vinyl polymer are ethylene, propylene, styrene, substituted styrene, vinyl ether, vinyl thioether, vinyl esters, vinyl halides, vinylidene halides, vinyl carbazole, acrylic acid derivatives, methacrylic acid A method for manufacturing a light-emitting device, which is a derivative, isobutylene, acrylonitrile, or vinylcyclopropane.