JP2005109406A - Transfer element and its joining method, transfer substrate, and electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the productivity of a transfer element without resulting a continuity failure. <P>SOLUTION: In the transfer elements which are plurally arranged on a substrate 16 and are peeled from the substrate 16 to be transferred, a plane view is composed to have a figure of a circle or an n-gon(n is an integer of ≥6.). <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a transfer element and a bonding method thereof, a transfer substrate, and an electro-optical device.

In semiconductor application devices such as a liquid crystal display (LCD) panel and an electroluminescence (EL) display, it may be desirable to use a plastic substrate as a base substrate for reasons such as prevention of breakage due to deformation or dropping, and cost reduction. .
However, since a high temperature process is used in manufacturing a thin film transistor (TFT element) used for a panel type display, some circuit elements such as a plastic substrate and an EL element cannot withstand high temperatures.

Therefore, the present applicant has manufactured a thin film element such as a TFT element on a heat-resistant basic substrate by a conventional semiconductor manufacturing technique including a high temperature process, and then formed an element forming film (layer) from which the thin film element is formed. A transfer technique for manufacturing a semiconductor application device is proposed by peeling the film and attaching and transferring it to a plastic substrate (wiring substrate) with an adhesive. These transfer techniques are described in detail in Patent Documents 1 to 3, for example.
Japanese Patent Laid-Open No. 10-125929 Japanese Patent Laid-Open No. 10-125930 Japanese Patent Laid-Open No. 10-125931

However, the following problems exist in the conventional technology as described above.
Many thin film elements, such as TFT elements, have a rectangular shape in a plan view, and a bonding adhesive is also applied in accordance with this shape. In the bonding process, the thin film element is pressed and bonded to the adhesive while being heated, but the adhesive is often pressed to expand larger than the outer shape of the thin film element. In this case, since the adhesive spreads isotropically, it has a substantially circular shape or a substantially elliptical shape. However, since the TFT element is rectangular, the adhesive is partially applied (for example, a long side portion or a short side portion of the TFT element). It will be in a state that protrudes greatly. As a result, on the base substrate on which a plurality of TFT elements are arranged, the adhesive may reach the adjacent thin film elements, so that it is necessary to increase the arrangement interval of the thin film elements, and the yield (from one base substrate) The number of thin film elements obtained) deteriorates and productivity decreases.

  Therefore, it is conceivable to reduce the amount of adhesive applied in consideration of the spread during pressurization, but the connection terminals between the thin film element and the wiring board are often arranged near the outermost periphery of the thin film element, In particular, when a conductive adhesive is used as the adhesive, there is a possibility that the adhesive does not reach the connection terminal and a conduction failure occurs.

  The present invention has been made in consideration of the above points, a transfer element capable of improving productivity without causing poor conduction and the like, a bonding method thereof, a transfer substrate, and an electro-optical device. The purpose is to provide.

In order to achieve the above object, the present invention employs the following configuration.
The transfer element of the present invention is a transfer element that is formed by arranging a plurality of elements on a substrate and is transferred after being peeled from the substrate. The transfer element is circular or n-gonal (n is an integer of 6 or more) in plan view. It has a polygonal shape.
Therefore, in the present invention, even when the adhesive spreads in a substantially circular shape or a substantially elliptical shape at the time of joining, it is possible to reduce the amount of protrusion beyond the outer shape of the transfer element. Therefore, the arrangement pitch of the transfer elements on the substrate can be reduced without reducing the application amount of the adhesive, and the yield can be improved. As a result, it is possible to prevent productivity from being lowered due to a deterioration in yield without causing poor conduction.

The transfer element of the present invention is a transfer element that is formed in a plurality of arrangements on a substrate and is peeled off from the substrate and transferred to a second substrate, and is electrically connected to the second substrate. And the connection terminal is disposed inside the outer periphery of the connection terminal.
Therefore, in the present invention, even if the adhesive spreads when the transfer element is joined after applying an adhesive (for example, conductive adhesive such as ACP) to the region where the connection terminal is disposed, the transfer element It is possible to prevent the transfer element from protruding beyond the outer shape without depending on the planar shape. Therefore, the arrangement pitch of the transfer elements on the substrate can be reduced without reducing the application amount of the adhesive, and the yield can be improved. As a result, it is possible to prevent productivity from being lowered due to a deterioration in yield without causing poor conduction.

In this case, it is desirable that the connection terminals are arranged in a plurality of rings at intervals.
Thereby, when the adhesive spreads in a circular shape, the adhesive can be evenly applied to the connection terminals.

On the other hand, the transfer substrate of the present invention is interposed between the plurality of transfer elements provided on the base and the base and the transfer element, and peels the transfer element from the base. And a release layer.
Accordingly, in the present invention, the transfer elements can be arranged and formed with a minute arrangement pitch, and more transfer elements can be formed on the transfer substrate. Therefore, the cost of the transfer substrate can be reduced, and the productivity can be improved by reducing the number of transfer substrates used in the bonding process.

Note that a thin film transistor can be employed as the transfer element.
In addition, a configuration in which the transfer elements are arranged in a staggered pattern or a lattice pattern can be suitably employed.
In this case, more transfer elements can be efficiently arranged on the transfer substrate, which can contribute to cost reduction.

The electro-optical device of the present invention is an electro-optical device including a circuit board having wirings formed in a predetermined pattern on a substrate, and an electro-optical panel electrically connected to the circuit board. The above-mentioned transfer element is transferred to the substrate and is electrically connected to the wiring via an adhesive.
Therefore, according to the present invention, it is possible to obtain an electro-optical device that does not cause poor conduction and has excellent productivity.

And the transfer element joining method predetermined of the present invention is a method of joining the transfer element to the wiring of the circuit board on which the wiring is formed in a pattern, the step of applying an adhesive on the wiring, And a step of electrically connecting the transfer element on the transfer substrate to the wiring via the adhesive, and a step of peeling the transfer element from the transfer substrate. .
Accordingly, in the present invention, since more transfer elements are formed at a fine pitch on the transfer substrate used when the transfer element is bonded to the circuit board, the cost for bonding can be reduced. It is possible to increase the productivity by reducing the frequency of substrate replacement in the bonding process.
In addition, when transferring the transfer element, it is also possible to adopt a configuration in which a part of the transfer elements among a plurality of transfer elements formed on the transfer substrate is selected and peeled off.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a transfer element and its bonding method, a transfer substrate, and an electro-optical device according to the present invention will be described below with reference to FIGS.
Here, an example in which an organic EL display is manufactured as an electro-optical device by transferring a TFT element to a wiring substrate and bonding the organic EL substrate to the wiring substrate will be described.

(First embodiment)
In FIG. 1, reference numeral 1 denotes an organic EL display (electro-optical device).
The organic EL display 1 has a configuration in which a wiring substrate 2 as a circuit board and an EL substrate (organic EL element substrate) 3 as an electro-optical panel are electrically joined at a joint 4. A space between the substrate 2 and the EL substrate 3 is sealed with a sealing resin 25.

  The wiring substrate 2 is provided with an insulating layer 2a on the surface of a substrate 5 made of an insulating material such as glass, and a TFT element (thin film transistor) as a transfer element corresponding to the pixel position of the organic EL display 1 on the insulating layer 2a. The element) 6 is mounted via the conductive adhesive layer 18 and the bumps 7 by transfer described later.

  Here, the bonding portion 4 is made of an anisotropic conductive paste (ACP) as a bonding material, and is formed on the connection pad (wiring) 8 so as to protrude from the TFT element 6. Yes. The anisotropic conductive paste is obtained by dispersing conductive particles (filler) in a binder such as a bonding resin, and a dispersant may be added. As the conductive particles, those obtained by applying conductive metal plating such as gold plating on the surface of substantially spherical resin particles (resin balls) are used. In addition, as the junction part 4, what disperse | distributed the metal fine particle to the dispersion medium may be used, or alloy joining may be used. Moreover, as said plating material and metal microparticles, it is preferable from a viewpoint of global environment protection to use lead-free material.

In the EL substrate 3, a transparent electrode layer 12 is formed over the entire surface of a transparent substrate 11 such as glass, and pixel formation regions separated from each other by a bank 13 made of an insulator on the upper surface of the transparent electrode layer 12. A light emitting layer 14 composed of a hole injection layer and an organic EL layer and a cathode layer (cathode electrode layer) 15 are laminated. The cathode layer 15 extends so as to reach the bank 13, and is electrically connected to the wiring substrate 2 (and the TFT element 6) via the bonding portion 4 (conductive particles) outside the pixel formation region. Connected.
In addition, the material which forms the transparent electrode layer 12, the light emitting layer 14, and the cathode layer 15 can apply the same material as that used for a well-known organic EL display.

  As shown in FIG. 2A, a plurality of TFT elements 6 are formed on a TFT substrate 16 as a transfer substrate. The TFT substrate 16 has a configuration in which, for example, a release layer 20 is formed on a translucent heat-resistant substrate (base) 19 such as quartz glass that can withstand about 1000 ° C., and a plurality of TFT elements 6 are formed on the release layer 20. It has become. The thickness of the translucent heat-resistant substrate 19 is not greatly limited. However, if the substrate thickness is too thin, the strength is reduced. Conversely, if the substrate thickness is too thick, the irradiation light described later is used. Therefore, the thickness is preferably about 0.1 mm to 0.5 mm, more preferably about 0.5 mm to 1.5 mm.

The peeling layer 20 is peeled (also referred to as “in-layer peeling” or “interfacial peeling”) within the layer or at the interface by irradiation light such as laser light. That is, by irradiating with a certain intensity of irradiation light, interatomic or intermolecular bonding force of atoms or molecules constituting the constituent material disappears or decreases, causing ablation, etc., and causing separation It is. In addition, when the component contained in the release layer 20 is released as a gas due to the irradiation of the irradiation light and is separated, the release layer 2 absorbs the light and becomes a gas, and the vapor is released and separated. May lead to.
As the composition of the release layer 20, for example, amorphous silicon (a-Si) can be used. This amorphous silicon may contain hydrogen (H). The hydrogen content is preferably about 2 at% or more, and more preferably 2 to 20% at%. When hydrogen is contained, an internal pressure is generated in the release layer 20 due to the release of hydrogen by light irradiation, which promotes the release. The hydrogen content should be set appropriately for film formation conditions, such as the gas composition, gas pressure, gas atmosphere, gas flow rate, gas temperature, substrate temperature, and power to be applied when using the CVD method. Adjust by. Other release layer materials include silicon oxides or silicate compounds, nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride, organic polymer materials (those whose interatomic bonds are broken by light irradiation), A metal, for example, Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, or Sm, or an alloy containing at least one of them can be given.

  As the thickness of the release layer 20, if the thickness of the release layer 20 is too thin, the uniformity of the formed film thickness is lost, resulting in uneven peeling, and if the release layer 20 is too thick, it is necessary for release. It is necessary to increase the power (light quantity) of the irradiated light, and it takes time to remove the residue of the peeling layer 20 left after peeling, so that the thickness is about 1 nm to 20 μm. Is preferably about 10 nm to 2 μm, and more preferably about 20 nm to 1 μm.

  The method for forming the release layer 20 may be any method that can form the release layer 20 with a uniform thickness, and can be appropriately selected according to various conditions such as the composition and thickness of the release layer 20. For example, various vapor deposition methods such as CVD (including MOCCVD, low pressure CVD, ECR-CVD), vapor deposition, molecular beam vapor deposition (MB), sputtering, ion doping, PVD, electroplating, immersion plating (dipping) ), Various plating methods such as electroless plating method, Langmuir Projet (LB) method, spin coating method, spray coating method, roll coating method and other coating methods, various printing methods, transfer methods, ink jet methods, powder jet methods Applicable to etc. Of these, two or more methods may be combined.

  In particular, when the composition of the release layer 20 is amorphous silicon (a-Si), it is preferable to form a film by a CVD method, particularly low-pressure CVD or plasma CVD. In addition, when the release layer 20 is formed by using a ceramic by a sol-gel method or is made of an organic polymer material, it is preferably formed by a coating method, particularly by spin coating.

FIG. 2B is a cross-sectional view showing an example of the TFT element 6 used in the present embodiment. This TFT element 6 is, for example, a TFT (thin film transistor) formed on a SiO ₂ film (intermediate layer) 36. The TFT includes a source / drain region 37 formed by introducing an n-type impurity into the polysilicon layer, a channel region 38, a gate insulating film 39, a gate electrode 40, and interlayer insulation. A film 41 and an electrode 42 made of, for example, aluminum are provided. The TFT element 6 is not limited to the TFT, and various elements such as a silicon-based transistor and SOI (silicon on insulator) can be applied.
Further, here, the TFT element 6 has a circular shape in plan view as shown in FIG. 3, and as shown in FIG. It is arranged in multiple shapes.

  Next, a manufacturing procedure of the organic EL display having the above configuration will be described with reference to FIG. In these drawings, for easy understanding, each layer and each member are illustrated in a simplified manner and the scale is different.

First, as shown in FIG. 5A, wirings such as the insulating layer 2a, the bumps 7, and the connection pads 8 are formed on the substrate 5 by using a known technique such as sputtering or photolithography.
Next, as shown in FIG. 5B, the TFT substrate 16 on which the plurality of TFT elements 6 are formed is disposed so as to face the spacer 17.
At this time, the conductive adhesive 18 is applied on the bump 7 in advance, and the TFT substrate 16 is set so that the TFT element 6 and the bump 7 face each other and the conductive adhesive 18 is filled therebetween. Monkey. Then, the conductive adhesive 18 is cured while being heated and pressurized in the vertical direction in the figure. Thereby, the TFT element 6 and the bump 7 are bonded via the conductive adhesive 18, and conductive particles (not shown) in the conductive adhesive 18 are connected (contacted) in the vertical direction in the figure, so that the TFT element 6 and the bump 7 are electrically connected through the conductive particles.

  Here, the conductive adhesive 18 is applied in a range inside the outer shape of the TFT element 6 according to the size of the TFT element 6. It expands greatly (FIG. 1 shows the expanded state). Since the conductive adhesive 18 spreads in an isotropic manner, the conductive adhesive 18 has a substantially circular shape or a substantially elliptical shape. However, since the TFT element 6 has a circular shape, as shown in FIG. The agent 18 does not protrude locally, but only a small amount protrudes from the outer shape of the TFT element 6. Therefore, the plurality of TFT elements 6 are arranged in a state in which the arrangement interval is suppressed without increasing more than necessary.

Subsequently, the irradiation light 21 is selectively (locally) irradiated to a predetermined TFT element 6 among the plurality of TFT elements from the rear surface side (irradiation light incident surface 19a side) of the translucent heat-resistant substrate 19. (See FIG. 5 (b)). The irradiation light 21 passes through the substrate 19 and is then applied to the release layer 20 from the interface side.
Irradiation light 21 may be any material as long as it causes in-layer separation and / or interfacial separation in release layer 20, for example, X-rays, ultraviolet rays, visible light, infrared rays (heat rays), laser light, millimeter waves. , Microwaves, electron beams, radiation (α rays, β rays, γ rays) and the like. Among them, laser light is preferable in that separation (ablation) of the separation layer 2 is likely to occur. Examples of the laser device that generates the laser light include various gas lasers, solid lasers (semiconductor lasers), and the like. Excimer lasers, Nd-YAG lasers, Ar lasers, CO ₂ lasers, CO lasers, He-Ne lasers, and the like. Are preferably used, and an excimer laser is particularly preferable among them. Since the excimer laser outputs high energy in a short wavelength region, it can cause ablation in the release layer 20 in an extremely short time, and thus almost no increase in temperature is caused in the adjacent or nearby TFT element 6, substrate 19, etc. The peeling layer 20 can be peeled without causing it, that is, without causing deterioration or damage.
As a result, in-layer peeling and / or interface peeling occurs in the peeling layer 20 and the bonding force decreases or disappears. Therefore, when the substrate 19 and the TFT element 6 are separated from each other, as shown in FIG. The element 6 is detached from the substrate 19 and transferred to the wiring substrate 2.

  After that, as shown in FIG. 5C, an anisotropic conductive paste is applied to a predetermined height by printing or the like on the connection pad 8 separated from the TFT element 6 and the bump 7 to form the joint 4. . Here, the bonding portion 4 is applied so as to be higher than the TFT element 6. Then, as shown in FIG. 1, the EL substrate 3 is cured while being heated and pressurized in the vertical direction in the drawing while positioning the EL substrate 3 with respect to the wiring substrate 2. As a result, the cathode layer 15 is bonded at the bonding portion 4, and the wiring substrate 2 and the EL substrate 3 are electrically connected via the conductive particles. Thereafter, the gap between the EL substrate 3 and the wiring substrate 2 is sealed with a sealing resin 25, whereby the organic EL display 1 is completed.

Thus, in this embodiment, since the TFT element 6 has a circular shape in plan view, even when the conductive adhesive 18 is applied to the outermost peripheral portion of the TFT element 6 in order to avoid poor conduction, A small amount of the conductive adhesive 18 protruding from the TFT element 6 can be suppressed uniformly, and it is not necessary to unnecessarily increase the arrangement interval of the TFT elements 6 formed on the TFT substrate 16. As a result, more TFT elements 6 can be formed on the TFT substrate 16, yield can be improved, production efficiency can be increased, and cost can be reduced.
Further, in this embodiment, since it is not necessary to consider a problem caused by spreading when mounting the conductive adhesive, a margin can be added to mounting conditions such as printing, and the mounting process can be stabilized. Can be done.

(Second Embodiment)
In the first embodiment, the TFT element is described as having a circular shape in plan view. However, the present invention is not limited to this, and the amount of isotropically expanded conductive adhesive protrudes from the TFT element. May be a polygon, more specifically an n-gon (n is an integer of 6 or more). FIG. 6 shows a TFT element 6 having a hexagonal shape (n = 6) in plan view. As shown in the figure, since the conductive adhesive 18 protruding from the TFT element 6 is suppressed to a very small amount, Actions and effects similar to those of the first embodiment can be obtained.
Even when the TFT elements 6 are polygonal in this way, as shown in FIG. 7, it is possible to arrange the TFT elements 6 on the TFT substrate 16 in a staggered manner so that the dead space is minimized and more This is preferable from the viewpoint of forming a TFT element.
6 and 7 exemplify hexagonal elements, but the same operation and effect can be achieved even with heptagons or more. 6 and 7 show a regular hexagonal element, it is not necessarily a regular polygon.

(Third embodiment)
In the first and second embodiments, the description has been given using the configuration in which the TFT element is a circular shape or a hexagonal or more polygonal shape. However, a rectangular shape, for example, a square shape may be used as in the conventional case.
Specifically, in the present embodiment, as shown in FIG. 8, the external connection terminal (connection terminal) 26 is located inside the TFT element 6 spaced apart from the outer periphery of the square-shaped TFT element 6 in plan view. A plurality of rings (radial) are arranged at intervals around an axis passing through the center of 6.
In the case of this TFT element, it may be arranged in a staggered manner as described above, or it can be arranged in a lattice form as shown in FIG. 9, and in any case, the dead space is minimized. Thus, more TFT elements can be formed.

In the above configuration, since the gap between the outer periphery of the element and the terminal 26 can be increased, even when the conductive adhesive applied so as to cover the terminal 26 spreads, the protrusion from the TFT element 6 is prevented. It is also possible. Therefore, even when a TFT element having the same outer shape (rectangular shape) as that of the prior art is used, it is possible to form more TFT elements 6 on the TFT substrate 16, thereby improving the yield and increasing the production efficiency. As well as cost reduction.
In particular, since the terminal 26 is arranged in an annular shape, when the conductive adhesive isotropically expands due to pressurization, the amount of the adhesive protruding outside the terminal 26 can be minimized. As a result, the possibility that the conductive adhesive protrudes from the TFT element 6 can be reduced.
Further, in this embodiment, since it is not necessary to consider the protrusion from the element when mounting the conductive adhesive, more margins can be added depending on mounting conditions such as printing, and the mounting process is further increased. It becomes possible to carry out stably.

  In the above embodiment, the EL substrate 3 is bonded to the wiring substrate 2 to manufacture the organic EL display 1. However, the present invention is not limited to this, and other functional substrates. For example, a liquid crystal display element (electro-optical device) may be manufactured by bonding a liquid crystal display element substrate to the wiring substrate 2. In this case, the TFT element 6 functions as a switching element for driving the liquid crystal display element.

FIG. 10 illustrates a specific example of an electronic apparatus to which the electro-optical device of the invention is applied.
FIG. 10A is a perspective view showing an example of a mobile phone. In FIG. 10A, reference numeral 600 denotes a mobile phone main body, and reference numeral 601 denotes a display unit including the organic EL display body 1 and the liquid crystal display body of the above embodiment.
FIG. 10B is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 10B, reference numeral 700 denotes an information processing apparatus, 701 denotes an input unit such as a keyboard, 703 denotes an information processing body, and 702 denotes a display unit including the organic EL display 1 and the liquid crystal display of the above embodiment. Yes.
FIG. 10C is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 10C, reference numeral 800 denotes a watch body, and reference numeral 801 denotes a display unit including the organic EL display body 1 and the liquid crystal display body of the above-described embodiment.
Since the electronic apparatus shown in FIGS. 10A to 10C includes the organic EL display 1 and the liquid crystal display according to the above-described embodiment, it can be reduced in size, thickness, and quality.
In addition, although the electronic device of this embodiment shall be provided with an organic electroluminescent display apparatus, it can also be set as the electronic device provided with other electro-optical devices, such as a liquid crystal device and a plasma type display apparatus.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

For example, in the above embodiment, a part of the TFT elements 6 on the TFT substrate 16 is transferred to the wiring board 2. However, a plurality of TFT elements are previously formed at positions corresponding to the pixel regions on the TFT substrate. Alternatively, all the TFT elements may be transferred to the wiring substrate 2 at once.
Further, in the above embodiment, the TFT element is transferred to the wiring substrate 2 as the transfer element. However, in addition to the TFT element, a thin film diode, other thin film semiconductor devices, electrodes (eg, ITO, mesa film) Transparent electrodes), photoelectric conversion elements used in solar cells and image sensors, switching elements, memories, actuators such as piezoelectric elements, micromirrors (piezo thin film ceramics), magnetic recording media, magneto-optical recording media, optical recording media Recording media, magnetic recording thin film heads, coils, inductors, thin film high magnetic permeability materials and micro magnetic devices combining them, filters, reflective films, dichroic mirrors, optical thin films such as polarizing elements, semiconductor thin films, superconducting thin films ( Example: YBCO thin film), magnetic thin film, metal multilayer thin film, metal ceramic multilayer thin film, metal Conductor multilayer thin film, ceramic semiconductor multilayer film, a multilayer thin film of the organic thin film and other materials.
Among these, it is particularly preferable because it is highly useful when applied to a thin film device, a micro magnetic device, a configuration of a micro three-dimensional structure, an actuator, a micro mirror, and the like.

It is a fragmentary sectional view of the organic electroluminescent display body with which the wiring board and EL board | substrate were joined. It is a fragmentary sectional view of a TFT substrate. It is a top view of a TFT element. It is a fragmentary top view of the TFT element arranged on the TFT substrate. It is a figure which shows the manufacture procedure of an organic electroluminescent display body. It is a top view which shows the TFT element of 2nd Embodiment. FIG. 7 is a partial plan view in which the TFT elements of FIG. 6 are arranged on a TFT substrate. It is a top view which shows the TFT element of 3rd Embodiment. FIG. 9 is a partial plan view in which the TFT elements of FIG. 8 are arranged on a TFT substrate. FIG. 11 is a diagram illustrating a specific example of an electronic apparatus to which the electro-optical device of the invention is applied.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL display body (electro-optical device), 2 ... Wiring board (circuit board), 3 ... EL board | substrate (electro-optical panel, organic EL element board | substrate), 6 ... TFT element (transfer element, thin-film transistor element), 8 ... Connection pads (wiring), 16 ... TFT substrate (transfer substrate, substrate), 18 ... Adhesive, 19 ... Translucent heat-resistant substrate (base), 20 ... Peeling layer, 26 ... Terminal (connection terminal)

Claims (10)

A plurality of transfer elements that are formed on a substrate and are peeled off and transferred from the substrate,
A transfer element having a circular shape or a polygonal shape of n-gon (n is an integer of 6 or more) in plan view. A plurality of transfer elements formed on a substrate and arranged to be peeled from the substrate and transferred to a second substrate;
A connection terminal electrically connected to the second substrate;
The transfer element, wherein the connection terminal is disposed inside the outer peripheral portion. The transfer element according to claim 2,
The transfer element, wherein the connection terminals are arranged in a plurality of rings at intervals. A plurality of transfer elements according to any one of claims 1 to 3 provided on a base;
A transfer substrate comprising a release layer interposed between the base and the transfer element and configured to peel the transfer element from the base. The transfer substrate according to claim 4,
The transfer substrate, wherein the transfer element is a thin film transistor. The transfer substrate according to claim 4 or 5,
A transfer substrate, wherein the transfer elements are arranged in a staggered pattern. The transfer substrate according to claim 4 or 5,
A transfer substrate, wherein the transfer elements are arranged in a grid pattern. An electro-optical device comprising a circuit board on which wiring is formed in a predetermined pattern on a board, and an electro-optical panel electrically connected to the circuit board,
4. An electro-optical device, wherein the transfer element according to claim 1 is transferred to the circuit board and electrically connected to the wiring via an adhesive. A method of joining a transfer element to the wiring of a circuit board on which wiring is formed in a predetermined pattern,
Applying an adhesive on the wiring;
Electrically connecting the transfer element on the transfer substrate according to any one of claims 4 to 7 to the wiring via the adhesive;
And a step of peeling the transfer element from the transfer substrate. The bonding method of a transfer element according to claim 9,
A transfer element joining method, wherein a part of transfer elements among a plurality of transfer elements formed on the transfer substrate is selected and peeled off.

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