JP2005108824A - Display device and producing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sealing structure capable of preventing intrusion of external materials such as water and oxygen causing deterioration and obtaining sufficient reliability in a display using an organic or inorganic electroluminescent element. <P>SOLUTION: A display device is featured to obtain the sufficient reliability by suppressing deterioration of the element by blocking the intrusion of water from an inter-layer insulating film by focusing attention on water permeability of the insulating film. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a display device manufactured using an element (light emitting element) that emits light by sandwiching a luminescent material between electrodes and passing a current between the electrodes, and in particular, a sealing structure of the light emitting element in such a display device. About.

  In recent years, thin and lightweight displays using light-emitting elements have been actively developed. A light-emitting element is created by sandwiching a material that emits light by passing a current between a pair of electrodes. However, unlike a liquid crystal, it emits itself, so a light source such as a backlight is not required, and the element itself is very thin. Therefore, it is very advantageous in creating a thin and light display.

  There are organic and inorganic materials for the light-emitting element, and light-emitting elements using an organic material with a low driving voltage are often regarded as the most important. The driving voltage of a display using an organic light emitting element is 5 to 10 V, and it can be seen that it can be driven at a very low voltage as compared with an electroluminescent device using an inorganic material that requires a driving voltage of 100 to 200 V. In addition, the driving voltage of a liquid crystal display calling for low power consumption is about 5 to 15.5 V, and it can be seen that the liquid crystal display can be driven with the same or lower voltage than the liquid crystal display.

  However, one of the backgrounds that have not yet been put into practical use while having these advantages is the problem of reliability. Many light-emitting elements using organic materials are deteriorated by moisture (moisture), and have a drawback that long-term reliability is difficult to obtain. A light-emitting element that has been deteriorated by moisture may cause a decrease in luminance or stop emitting light. This is considered to be a cause of dark spots (black spots) and shrink (brightness deterioration from the end portion of the display device) in a display device using a light emitting element.

Of course, various countermeasures have been proposed to suppress such deterioration (see, for example, Patent Document 1 and Patent Document 2).
Japanese Patent Laid-Open No. 9-148066 Japanese Patent Laid-Open No. 13-203076

  However, even if such measures are applied, sufficient reliability has not yet been obtained, and further improvement in reliability is desired.

  Therefore, in the present invention, in a display using an organic or inorganic light-emitting element, sealing that can prevent entry of substances that cause deterioration such as water and oxygen from the outside and obtain sufficient reliability. It is an object to provide a structure.

  In view of the above problems, the present invention is characterized in that the deterioration of the light-emitting element is suppressed by inhibiting the intrusion of water from the interlayer insulating film to obtain sufficient reliability. In the present invention, in a light-emitting device having a pixel portion formed of light-emitting elements sandwiched between substrates, it is sufficient that at least one substrate has translucency.

  One of the structures of the present invention includes a light-emitting element in which at least one is sandwiched between a pair of light-transmitting substrates, and the light-emitting element is one of a first interlayer insulating film and a second interlayer insulating film, or A first opening penetrating the first interlayer insulating film at an outer peripheral portion of the first interlayer insulating film and the second interlayer insulating film; and An opening, a first water-impermeable protective film that covers the first interlayer insulating film in the first opening, and a second opening that penetrates the second interlayer insulating film. The light emitting device is characterized.

Another structure of the present invention includes a light-emitting element in which at least one is sandwiched between a pair of light-transmitting substrates, and the light-emitting element is one or both of a first interlayer insulating film and a second interlayer insulating film. A first opening penetrating the first interlayer insulating film at the outer periphery of the first interlayer insulating film and the second interlayer insulating film, and the first opening A first non-permeable protective film covering the first interlayer insulating film in the first and second openings, a second opening penetrating the second interlayer insulating film, and the second opening A second water-impermeable protective film that covers the opening and the second interlayer insulating film in the second opening, and is in contact with the first water-impermeable protective film at the bottom surface of the second opening. A light emitting device characterized by comprising:

Another structure of the present invention includes a light-emitting element in which at least one is sandwiched between a pair of light-transmitting substrates, and the light-emitting element is one or both of a first interlayer insulating film and a second interlayer insulating film. A first opening penetrating the first interlayer insulating film at the outer periphery of the first interlayer insulating film and the second interlayer insulating film, and the first opening A first non-permeable protective film covering the first interlayer insulating film in the first and second openings, a second opening penetrating the second interlayer insulating film, and the second opening A second water-impermeable protective film that covers the opening and the second interlayer insulating film in the second opening, and is in contact with the first water-impermeable protective film at the bottom surface of the second opening. And in the region where the first opening and the second opening are formed, or outside the region, A light emitting device, wherein the pair of substrates is fixed with the composition of the aqueous.

Another structure of the present invention is characterized in that, in the structure described above, the second water-impermeable protective film is formed of the same material as the anode or cathode of the light-emitting element.

Another structure of the present invention is a light-emitting device according to the above structure, in which a thin film transistor is connected to the light-emitting element and a pixel portion is provided.

Another structure of the present invention is characterized in that in the above structure, the first water-impermeable protective film is formed of the same material as that used for a source electrode and a drain electrode of the thin film transistor. Device.

Another structure of the present invention is a light-emitting device in which a semiconductor film is formed below the first opening in the structure.

Another structure of the present invention is a light emitting device according to the above structure, wherein a metal film is formed below the first opening.

Another structure of the present invention is a light-emitting device in which a semiconductor film is formed below the first opening in the structure, and the semiconductor film is made of the same material as an active layer of the thin film transistor. is there.

Another structure of the present invention is a light-emitting device in which a metal film is formed below the first opening in the structure, and the metal film is made of the same material as the gate electrode of the thin film transistor. is there.

Another configuration of the present invention is characterized in that in the above configuration, at least a part of the bottom surface of the first opening and the bottom surface of the second opening are formed at the same position in the plane of the substrate. It is a light-emitting device.

In another configuration of the present invention, the bottom surface of the first opening and the bottom surface of the second opening are formed at different positions in the plane of the substrate. It is.

Another structure of the present invention is a light-emitting device in which a plurality of the first opening and the second opening are formed in the structure.

Another structure of the present invention is a light-emitting device in which a plurality of the first opening and the second opening are formed in the structure.

Another structure of the present invention is a light emitting device according to the above structure, wherein at least one of the first interlayer insulating film and the second interlayer insulating film is formed of an organic material.

Another structure of the present invention is a light emitting device according to the above structure, wherein at least one of the first interlayer insulating film and the second interlayer insulating film is formed of an inorganic material.

Another configuration of the present invention is a light emitting device according to the above configuration, wherein at least one of the first interlayer insulating film and the second interlayer insulating film is formed of a siloxane-based film. .

Another structure of the present invention is a light-emitting device in which the organic material is acrylic or polyimide in the structure.

Another structure of the present invention is a light emitting device according to the above structure, wherein the first water-impermeable protective film or the second water-impermeable protective film is a silicon nitride film.

Another structure of the present invention is a light emitting device according to the above structure, wherein the first water-impermeable protective film and the second water-impermeable protective film are silicon nitride films.

Another structure of the present invention includes a light emitting element sandwiched between a pair of translucent substrates, at least one of which is formed in contact with an interlayer insulating film, and an end portion of the interlayer insulating film The light-emitting device is characterized in that the end of the interlayer insulating film is tapered without reaching the end of the substrate.

Another structure of the present invention includes a light emitting element sandwiched between a pair of translucent substrates, at least one of which is formed in contact with an interlayer insulating film, and an end portion of the interlayer insulating film Is not reaching the end of the substrate, the end of the interlayer insulating film is tapered, and a water-impermeable protective film is formed on the side end of the interlayer insulating film. Device.

Another structure of the present invention includes a light emitting element sandwiched between a pair of translucent substrates, at least one of which is formed in contact with an interlayer insulating film, and an end portion of the interlayer insulating film Does not reach the end of the substrate, the end of the interlayer insulating film is tapered, and a water-impermeable protective film is formed on the side end of the interlayer insulating film, and the side end of the interlayer insulating film The light-emitting device is characterized in that the pair of substrates are fixed to each other with a water-impermeable composition outside the area or outside the area.

Another structure of the present invention is a light-emitting device in which a thin film transistor is connected to the light-emitting element and a pixel portion is provided in the structure.

Another structure of the present invention is a light emitting device according to the structure, wherein a semiconductor film is formed from a lower part of the interlayer insulating film to an end portion of the substrate.

Another structure of the present invention is a light-emitting device, wherein a metal film is formed from a lower part of the interlayer insulating film to an end portion of the substrate in the structure.

Another structure of the present invention is characterized in that a semiconductor film is formed from the lower part of the interlayer insulating film to the edge of the substrate in the structure, and the semiconductor film is made of the same material as the active layer of the thin film transistor. It is a light-emitting device.

Another structure of the present invention is characterized in that a metal film is formed from a lower part of the interlayer insulating film to an edge of the substrate in the structure, and the metal film is made of the same material as the gate electrode of the thin film transistor. It is a light-emitting device.

Another structure of the present invention is a light emitting device according to the structure, wherein the interlayer insulating film is formed of an organic material.

Another structure of the present invention is a light emitting device according to the structure, wherein the interlayer insulating film is formed of an inorganic material.

Another structure of the present invention is a light emitting device according to the structure, wherein the interlayer insulating film is formed of a siloxane film.

Another structure of the present invention is a light-emitting device in which the organic material is acrylic or polyimide in the structure.

Another structure of the present invention is the light emitting device according to the structure, wherein the water-impermeable protective film is a silicon nitride film.

According to another configuration of the invention, a pixel portion including a light emitting element sandwiched between a pair of translucent substrates, at least one of them, an external connection portion for receiving a signal from the outside, the pixel portion and the external connection portion A plurality of wirings to be connected, the pair of substrates are fixed with a water-impermeable composition between the pixel portion and the external connection portion, and the light emitting element is formed in contact with an interlayer insulating film A part of the interlayer insulating film is located between adjacent wirings in the plurality of wirings, and the wiring is below a portion where the substrate is fixed with the water-impermeable composition, Alternatively, the light-emitting device is characterized in that a plurality of bent portions are densely provided inside.

  By adopting the above configuration, it is possible to reduce deterioration of the light emitting element in the electroluminescent device. Further, the reliability can be greatly improved.

  Embodiments for carrying out the present invention will be described below. In addition, the same number is attached | subjected to the same part or the same part of the number of drawing. The description of the same part is omitted.

(Embodiment 1)
In an electroluminescent device, an insulating film such as a silicon oxide film, a silicon nitride film, an acrylic film, a polyimide film, or a siloxane film is often used as an interlayer insulating film. In particular, an acrylic film or a siloxane film is a suitable material because it can be formed by a coating method and has high flatness, but has a feature of relatively high water permeability.

  2 is a cross-sectional view taken along line b-b ′ in FIG. 3. With the conventional structure as shown in FIG. 2, the end face 2 of the interlayer insulating film 1 is always exposed to the external atmosphere. Therefore, even if the upper portion is covered with the water-impermeable sealing material 3 and the light-emitting element 4 is not exposed to the outside air, water may enter through the interlayer insulating film to cause deterioration of the light-emitting element. there were.

  Therefore, one configuration in the present invention for solving this problem will be described with reference to FIG. FIG. 1 is an example in which the intrusion of water through the interlayer insulating film is reduced by covering the inside of the groove opened in the peripheral part of the interlayer insulating film with a non-moisture permeable film (hereinafter referred to as a protective film). (A), (B), and (C) correspond to, for example, a cross section taken along line dd ′ in FIG. In (A) and (B), a sealing material and a counter substrate made of a water-impermeable material are omitted. The state of the periphery of the electroluminescent device is shown. 100 is a substrate, 101 is a base insulating film, 102 is a first interlayer insulating film, 103 is a first protective film, 104 is a second interlayer insulating film, and 105 is a second protective film.

  In this configuration, it is assumed that the first interlayer insulating film 102 and the second interlayer insulating film 104 have relatively high moisture permeability, and grooves that penetrate these films in the thickness direction in these highly moisture permeable films. A shaped opening 106 is formed. Then, protective films 103 and 105 are formed so as to cover at least the inside of the trench (so as to continuously cover the exposed end surface of the interlayer insulating film and the lower film). Further, the protective films 103 and 105 are in contact with each other at the opening 106.

  With such a configuration, water that has entered from the end portions of the interlayer insulating films 102 and 104 is prevented from further intrusion by the non-moisture permeable protective films 103 and 105 formed on the end surfaces of the groove-like openings 106. Will be. Further, since the groove-like opening 106 is formed so as to penetrate in the thickness direction, the water ingress path is blocked without providing a protective film, and depending on the required degree of reliability, the groove-like opening 106 is cut off. Even if the opening is provided, it is a countermeasure against deterioration of the light emitting element due to water.

  The groove-shaped opening 106 is most effective when it is continuously formed on all the peripheral portions of the water-permeable film. If this is not possible, the groove-shaped opening 106 is formed only on one side or a part, but at least from that portion. Since water intrusion is reduced, a certain degree of effect can be expected.

  In FIG. 1, the groove-like opening 106 is repeatedly provided from the peripheral part of the interlayer insulating film toward the region where the light emitting element is formed, but only one groove-like opening 106 may be provided. Absent. However, if such a countermeasure is repeatedly provided several times, the reliability is further improved.

  Further, when the protective films 103 and 105 are formed of a wiring material, it can be used as a lead-out wiring that can be placed on the outer shell. Furthermore, the difference between FIG. 1A and FIG. 1B is whether or not the protective films 103 and 105 are independent of each opening, but each of the differences as shown in FIG. If the structure is independent of the opening, the protective film in each opening can be used as a separate wiring.

  Although other structures that suppress the intrusion of water by the groove-shaped opening and the protective film are conceivable, some examples are shown in FIG. The cross-sectional view illustrated in FIG. 4 also corresponds to d-d ′ and the like in FIG. 3. Moreover, the sealing material and counter substrate which consist of a water-impermeable material are abbreviate | omitted.

  FIG. 1 shows an example in which the positions of the first opening formed in the first interlayer insulating film 102 and the second opening formed in the second interlayer insulating film 104 are the same. 4 shows an example in which the position of the first opening formed in the first interlayer insulating film 102 and the position of the second opening formed in the second interlayer insulating film 104 are different. Even with such a configuration, the same effect as the configuration shown in FIG. 1 can be obtained, but the second opening is shallow compared to FIG. 1 and can be formed in a short time. It becomes. Further, since the step becomes small, there is less concern about the step breakage of the second protective film 105. 4A and 4B are different in layout formed by the openings.

  In addition, the element substrate 100 over which the light-emitting element is formed is fixed to the counter substrate 108 with a sealant 107 made of a non-permeable and non-permeable material, and the light-emitting element is sealed from the outside. By forming the sealing material on the upper portion of the groove-shaped opening 106 as in C), the effect of suppressing the ingress of water is exhibited.

  In this embodiment, the case where the interlayer insulating film has two layers has been described. Of course, the present invention can also be applied to a case where the interlayer insulating film has one layer.

(Embodiment 2)
In this embodiment, a water-permeable film around the substrate (this time, an interlayer insulating film is assumed. However, as a countermeasure against the water-permeable film, the target is not limited to the interlayer insulating film, and the present invention can be applied) FIG. 5 shows an example of a structure in which water is less likely to enter by removing the substrate from the outer periphery of the substrate by an appropriate distance. These cross-sectional views correspond to ee ′ in FIG.

  In FIG. 5A, reference numeral 120 denotes a portion where the interlayer insulating films 102 and 104 are removed from the end face of the substrate. In the first embodiment, the end surfaces of the interlayer insulating films 102 and 104 are in contact with the outside air. Therefore, in this embodiment, the interlayer insulating films 102 and 104 on the substrate end face are removed by an appropriate distance, and the end faces are covered with the protective films 103 and 105. Thereby, since it can suppress that the end surface of the film | membrane which has water permeability touches external air, it becomes possible to prevent water permeation itself.

  Further, when the counter substrate 108 is fixed, if the sealing material 107 made of a water-impermeable material is formed so as to cover the end surface of the interlayer insulating film covered with the protective film or cover the entire end surface of the interlayer insulating film, water further It is possible to prevent the intrusion of water and improve reliability.

  Although other configurations in this embodiment can be considered, an example thereof is illustrated in FIG. The difference between FIG. 5B and FIG. 5A is the removal position of the interlayer insulating films 102 and 104 on the substrate end face. FIG. 5A shows a structure in which the end portion of the second interlayer insulating film 104 is positioned on the outer peripheral side of the substrate from the end portion of the first interlayer insulating film 102, and FIG. 5B shows the structure of the second interlayer insulating film. In this structure, the end portion of the first interlayer insulating film 102 is located on the outer peripheral side of the substrate from the end portion of the insulating film 104.

  Note that although the interlayer insulating film in this embodiment has two layers, the present invention can also be applied to an electroluminescent device having one interlayer insulating film.

  Furthermore, the effect of this embodiment is further increased by combining with the first embodiment.

(Embodiment 3)
When the sealing structure having the structure of the present invention is manufactured, the opening 106 and the interlayer insulating film removal portion 120 on the end surface of the substrate are formed in the interlayer insulating films 102 and 104 as can be seen from FIG. The contact hole can be opened at the same time as opening the contact hole, which is efficient.

  However, since the contact hole is opened under the condition that the interlayer insulating film and the gate insulating film can be etched using the silicon semiconductor layer as an etching stopper, the opening 106 and the interlayer insulating film without the etching stopper are removed. In the portion 120, when etching the first interlayer insulating film 102, unevenness may occur due to etching residue or the underlying insulating film 101 being scraped.

  In FIG. 7A, a part of the interlayer insulating film is removed under the contact hole opening condition in which a siloxane-based film is formed as an interlayer insulating film on the base insulating film and a silicon nitride film is formed thereon. It is a SEM photograph of what formed wiring after doing. The portions C and c are portions from which the interlayer insulating film is removed, and wirings are formed in a, b, and c. A is the original unetched surface, B is the end face of the interlayer insulating film, and C is the surface of the underlying insulating film.

  As can be seen from this, when the interlayer insulating film is opened to the base insulating film under the contact hole opening condition, small irregularities as seen in C are formed. And by forming a wiring on it, it becomes very large unevenness like c. It is obvious that the unevenness is caused by the unevenness on the base film after opening the opening because the wiring formed on a is flat. Since the wiring can also be used as a protective film, unevenness is generated on the protective film. Further, the coverage of the wiring itself is also deteriorated.

  If such large irregularities occur, there is a risk that the adhesion of the sealing material made of a water-impermeable material formed thereon will be greatly affected. This is because if the sealing material has poor adhesiveness, even if the sealing material itself has low moisture permeability, water will infiltrate from the poorly adhesive portion.

  FIG. 7 (b) shows a structure in which a siloxane-based film is formed as an interlayer insulating film on the base insulating film in the same manner as in (a), the interlayer insulating film is removed under the contact hole opening conditions, and wiring is formed. It is a SEM photograph of what was done. (A) C corresponds to (b) D, and after forming the substrate \ underlying insulating film \ interlayer insulating film, the surface obtained by removing the interlayer insulating film under contact hole opening conditions, (b) c becomes (b) E Correspondingly, (b) a photograph of the surface on which the wiring is formed on D.

  On the other hand, (b) F forms a substrate / underlying insulating film / silicon film / interlayer insulating film and a silicon film serving as an etching stopper on the underlying insulating film, and then forms an interlayer insulating film. FIG. 5 is a photograph of the surface of a portion where the interlayer insulating film is removed under the contact hole opening conditions. That is, (b) a structure in which an etching stopper for the silicon film is provided in the structure of D. Since the silicon film in the portion F is removed by etching when the wiring is formed on the E, the base insulating film is visible as in (b) D, but silicon is drawn under the interlayer insulating film. It can be seen that the surface is very flat compared to D which was not.

  This is because the silicon film serves as an etching stopper film and suppresses the occurrence of residual etching of the interlayer insulating film when the interlayer insulating film is etched, and the occurrence of unevenness due to the underlayer being smeared.

  In view of this, in the present embodiment, etching stopper films 130 and 131 are formed in advance at positions where the opening 106 in FIG. 1 and the interlayer insulating film removal portion 120 in FIG. 5 are formed (FIG. 6A). )). The cross-sectional view shown in FIG. 6 corresponds to the cross section taken along line f-f ′ in FIG. 3.

  In this embodiment mode, an example in which such etching stopper films 130 and 131 are formed using a silicon film for forming a semiconductor layer 132 of a thin film transistor (TFT) manufactured in a driver circuit portion or a pixel portion is shown. However, the etching stopper films 130 and 131 may be any film as long as they function as etching stoppers for the opening 106 and the interlayer insulating film removing portion 120 when the interlayer insulating film is removed. The gate electrode 133 may be formed at the same time as the gate electrode 133, or may be formed at the same time as the gate electrode 133, or may be formed separately from another material. However, it is advantageous not to increase the number of processes if it is formed simultaneously with the semiconductor layer 132 or the gate insulating film.

  The opening 106 and the interlayer insulating film removal unit 120 are opened simultaneously with the opening of the contact hole for wiring. At this time, in the light emitting device of the present invention, the etching stopper films 130 and 131 (silicon film) are formed below the opening 106 and the interlayer insulating film removing section 120. Does not occur. If the wiring 134 formed thereafter is formed so as to cover the inside of the opening 106 and the end surface of the interlayer insulating film of the interlayer insulating film removing section 120, the wiring 134 also functions as the protective film 103. At this time, when the interlayer insulating film is removed by the etching stopper films 130 and 131, no etching residue or erosion occurs on the lower film, so that the adhesion of the protective film 103 can be prevented from deteriorating. It is possible to suppress the occurrence of unevenness.

  In the present embodiment, the protective film 103 is formed of the same metal film as the wiring 134 material, and can be formed at the same time as the wiring forming step. good.

  Further, the protective TFT 103 may be further covered with the material of the anode 135 of the light emitting element in the switching TFT of the pixel portion formed thereafter. Furthermore, it can be expected that water intrusion is suppressed. (Fig. 6 (B))

  The counter substrate 108 is fixed by a sealing material 107 made of a water-impermeable material after the light emitting element is formed. By applying the sealing material so as to ride on the groove-shaped opening 106 and / or the interlayer insulating film removing portion 120 at the peripheral portion of the substrate, the water entrance path can be blocked, so that deterioration of the light emitting element is suppressed. High effect. Note that the light-emitting element has a light-emitting layer 137 sandwiched between an anode 135 and a cathode 138, and the light-emitting elements are separated for each element by a partition wall 136 (FIG. 6C).

  Further, when this embodiment mode is used, the occurrence of unevenness of the protective film 103 on the interlayer insulating film removal portion 120 in the groove-shaped opening 106 and the peripheral portion of the substrate is suppressed, so that the adhesion of the sealing material is deteriorated. Reliability can be improved by preventing the intrusion of water from a part with poor adhesion.

  This embodiment mode can be freely combined with Embodiment Mode 1 and Embodiment Mode 2, and can further prevent water from entering from the outside, so that further improvement of the reliability of the electroluminescent device can be achieved. Leads to.

(Embodiment 4)
In this embodiment, a structure in which it is difficult to remove all of the interlayer insulating film, and a structure that can suppress the influence of water entering through the interlayer insulating film as much as possible will be described.

  As described in the second and third embodiments, the interlayer insulating film in the periphery of the substrate is removed, and the end surface of the interlayer insulating film is covered with the protective film 103 (and 105) and the sealing material 107 to cover the end surface. Avoiding exposure to outside air as much as possible is a very effective means for preventing water from entering, but depending on the structure, it may be difficult to remove all of the interlayer insulating film.

  For example, consider a wiring portion connecting an external terminal and an internal circuit (FIG. 3c). When this wiring is applied with a configuration for removing the interlayer insulating film in the peripheral portion of the substrate (configuration in which the interlayer insulating film removing portion 120 is formed: the second and third embodiments), the interlayer insulating film in the peripheral portion of the substrate is used. It is formed by removing, forming a metal film to be a wiring, and etching the metal film into a desired wiring shape.

  However, as shown in FIG. 8, there is a step 12 formed by the end face of the interlayer insulating film between the portion 10 where the interlayer insulating film 15 is removed and the portion 11 where the interlayer insulating film remains, and a film is formed in this portion. In some cases, the deposited metal film is not sufficiently etched and remains. Such etching residue 13 causes adjacent wirings 14 to be short-circuited and causes a defect.

    In order to reduce the number of interlayer insulating films that come into contact with the outside air as much as possible while preventing this short circuit, a measure of leaving an interlayer insulating film 16 between the wirings 14 as shown in FIG. 9 is taken. As a result, it is possible to prevent the above-described defects due to the short circuit while avoiding that most of the interlayer insulating film comes into contact with the outside air. However, the interlayer insulating film left between the wirings cannot be removed, and it always comes into contact with the outside air, and it is not possible to prevent water from entering from that portion. Intrusion of water from the interlayer insulating film remaining between the wirings may adversely affect when long-term reliability is considered.

  The penetration of water through the interlayer insulating film is caused by the phenomenon of water diffusion in the film. As the diffusion phenomenon is obtained from the diffusion equation, the time to reach a certain position is proportional to the square of the distance. In other words, when only the interlayer insulating film remaining between the wirings is the water ingress path, the water that diffuses and penetrates the interlayer insulating film remaining between the electrodes is taken into the electroluminescent device by taking the distance as long as possible. It is possible to effectively lengthen the time until it reaches.

  Therefore, in the present embodiment, conventionally, the wiring portion connecting the external terminal and the internal circuit has been a straight line except that a bent portion such as a bend is required in the layout as shown in FIG. As shown in FIG. 10B, the wiring 14 is intentionally provided with a plurality of bent portions densely in the long-side shape of the wiring.

  Then, the substantial length of the interlayer insulating film 16 existing between the wirings can be increased, and the distance that water diffuses in the interlayer insulating film before reaching the inside becomes longer. As a result, it is possible to greatly earn time until deterioration starts, and it is possible to ensure long-term reliability as compared with the conventional case.

  FIGS. 10 (3) to (6) are examples of other conceivable configurations for realizing the present embodiment. Thus, if the length of the interlayer insulating film between the wirings is a little longer than that of FIG. 10A of the conventional structure, the infiltration of water is delayed by that amount compared with the conventional structure. What is necessary is just to attach a desired pattern according to necessity.

  In addition, when this embodiment is used, since the area of the interlayer insulating film between the wirings when viewed from the top surface of the light emitting device is widened, the bent portions of the wirings are not exposed to the outside air, that is, the non-permeable property. It is important to dispose it so that it is located inside the sealing material made of the material or at the lower part of the sealing material.

  This embodiment can be used in appropriate combination with the first to third embodiments, and a wiring portion (such as FIG. 3c) that connects the external terminal and the internal circuit of the electroluminescent device can be used for the present embodiment. It is possible to prevent water from entering more efficiently by properly using the outer peripheral portion according to the location, such as using the first and second embodiments. Further, in this embodiment, there is a step of removing the interlayer insulating film when forming the wiring portion. At that time, if the configuration of the third embodiment is used, generation of unevenness on the wiring can be suppressed. Therefore, the adhesiveness of the sealing material made of a water-impermeable material is improved, and it is possible to greatly reduce the intrusion of water from the sealing material and the wiring interface.

(Embodiment 5)
In the present embodiment, the wiring insulation between the external terminal and the internal circuit (FIG. 3c, etc.) can also be used to remove the interlayer insulating film from the outer periphery of the substrate and prevent water from entering through the interlayer insulating film. This will be described with reference to FIG.

  As can be seen from FIG. 8, etching cannot be performed and an etching residue occurs only in the step 12 on the end face of the interlayer insulating film 15. Since the end face of the interlayer insulating film is cut off, the anisotropic dry etching used for forming the wiring may leave the wiring material unetched in this portion. In such a wiring portion, isotropic etching typified by wet etching is difficult to use in terms of wiring margin.

  Therefore, in this embodiment, the end surface 17 of the interlayer insulating film 18 is processed into a loose taper shape. As a result, the etching of the wiring is reliably performed even on the end face 17 of the interlayer insulating film, and it is possible to prevent the etching residue from occurring, so that it is not necessary to leave an interlayer insulating film between the wirings 14 (FIG. 11).

  As a result, it is possible to remove all the interlayer insulating film located in the peripheral portion of the substrate even in the wiring portion (such as FIG. 3c) connecting the external terminal and the internal circuit, and the entire outer peripheral portion is located from the position where the interlayer insulating film exists. By covering with a non-moisture permeable sealing material, all the paths of water passing through the interlayer insulating film can be cut off, and the reliability of the electroluminescent device can be greatly improved.

  The tapered end surface of the interlayer insulating film may be treated with an inert gas such as argon. Thereby, there is an effect that the end face of the wiring is densified and impurities such as water are less likely to enter from the end face in a state where it is not processed. Further, even if a nitride film such as a silicon nitride film is further formed and covered on the tapered end facet of the interlayer insulating film, it is preferable because water penetration from the end face is similarly suppressed.

  This embodiment mode can be used in combination with Embodiment Mode 1 and Embodiment Mode 2 as appropriate, and the wiring portion connecting the external terminal and the internal circuit of the electroluminescent device is the same as that of the present embodiment mode. For example, the use of the first and second embodiments makes it possible to prevent water from entering more efficiently by properly using it according to the location and necessity.

(Embodiment 6)
In this embodiment, an example in which Embodiment 5 and Embodiment 3 are combined will be described.

  In this embodiment, which is a combination of the fifth embodiment and the third embodiment, an etching stopper film 20 is formed on the portion 10 from which the interlayer insulating film has been removed in order to suppress the occurrence of unevenness that occurs during the etching of the interlayer insulating film. In this case, considering the margin 21 for forming the tapered shape on the end surface of the interlayer insulating film, a film serving as an etching stopper is inevitably formed below the remaining interlayer insulating film 15 (FIG. 12A). ).

  Since the etching stopper film 20 is formed on the entire surface of the interlayer insulating film removal portion 10 and the wiring 14 is formed thereon, if the etching stopper film 20 is conductive, all the wiring formed in the interlayer insulating film removal portion is left as it is. Will be short-circuited. However, the etching stopper film at the position 22 where the wiring is not formed is etched together with an unnecessary metal film at the time of etching for forming the wiring shape, and if it is removed or cannot be removed by the wiring etching, etching suitable for that is performed. Since it is removed by performing again, there is no worry about a short circuit between the wirings in that portion. However, the etching stopper film 23 (etching stopper film 20 at the position of the taper formation margin 21) located under the above-described remaining interlayer insulating film is covered with the interlayer insulating film and remains without being removed. . If the film is conductive, there is a problem that the wiring is short-circuited through the portion (see FIG. 12B).

  Of course, when the etching stopper film is formed of an insulating film, such a problem does not occur. However, if the etching stopper film is formed without increasing the number of steps, the possible film is the silicon film used for the semiconductor layer. Alternatively, the metal film used for the gate electrode, both of which have conductivity, this problem is a prominent problem.

  Therefore, in this embodiment, the etching stopper film located between the wirings is not formed from the beginning among the etching stopper films located under the interlayer insulating film (FIG. 13). Alternatively, among the etching stopper films located under the interlayer insulating film, the etching stopper film located between the wirings is separated from the etching stopper film located under the wirings (FIG. 18B). ).

  By using this configuration, it is possible to suppress the occurrence of unevenness when removing the interlayer insulating film in the wiring portion connecting the external terminal and the internal circuit, and to suppress the unevenness of the wiring. As a result, it is possible to prevent a decrease in the adhesion of the sealing material due to the unevenness of the lower film, and it is possible to greatly reduce the intrusion of water from the portion where the adhesion of the sealing material is poor. Reliability is very good.

  In this example, detailed examples of the first embodiment and the second embodiment will be described with reference to FIGS.

  A base insulating film 201, a driver circuit transistor (only an n-channel thin film transistor 203 and a p-channel thin film transistor 204 are shown in this drawing), and a thin film transistor in a pixel portion (a switching transistor 205 and a current control transistor 206 in this drawing) A first interlayer insulating film 225 is formed over the substrate 200 on which only the substrate is formed.

    Examples of the substrate 200 include an insulating substrate such as a glass substrate, a quartz substrate, and crystalline glass, a ceramic substrate, a stainless steel substrate, a metal substrate (tantalum, tungsten, molybdenum, etc.), a semiconductor substrate, and a plastic substrate (polyimide, acrylic, polyethylene terephthalate). Polycarbonate, polyarylate, polyethersulfone, etc.) can be used, but at least materials that can withstand the heat generated during the process are used. In this embodiment, a glass substrate is used.

  As the base insulating film 201, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like can be used. These are formed by using a known method such as a sputtering method, a low pressure CVD method, or a plasma CVD method. In this embodiment, a silicon nitride oxide film is formed with a thickness of 100 nm.

  Next, an amorphous semiconductor film is formed. The amorphous semiconductor film may be formed to a desired thickness using silicon or a material containing silicon as a main component (for example, SixGe1-x). As a manufacturing method, a known method such as a sputtering method, a low pressure CVD method, or a plasma CVD method can be used. In this embodiment, the film is formed with amorphous silicon to a film thickness of 50 nm.

  Subsequently, crystallization of amorphous silicon is performed. In this embodiment, a process of laser crystallization after adding an element that promotes crystallization and crystallization by heat treatment will be described.

  First, a nickel acetate salt solution or nickel nitrate salt solution containing 5 to 10 ppm of nickel by weight is applied by a spinner to form a thin film of nickel solution on the semiconductor film surface. Instead of coating, a method of spreading nickel element over the entire surface by sputtering may be used. As a catalyst element, in addition to nickel (Ni), iron (Fe), palladium (Pd), tin (Sn), lead (Pb), cobalt (Co), platinum (Pt), copper (Cu), gold (Au ), Or one or more selected from elements such as, can also be used.

  Next, heat treatment is performed to crystallize the amorphous semiconductor film. Since a catalytic element is used, it may be performed at 500 ° C. to 650 ° C. for about 4 to 24 hours. By this crystallization treatment, the semiconductor film becomes a crystalline semiconductor film.

  Subsequently, crystallization is performed with a laser to improve crystallinity. In the laser crystallization method, a pulse oscillation type or continuous oscillation type gas, solid or metal laser oscillation device or the like is used as a laser oscillation device. The laser oscillated by the laser oscillation device may be irradiated in a linear form using an optical system.

  The semiconductor film crystallized by using a metal that promotes crystallization as in this embodiment contains the metal element used for crystallization in the film, and various problems arise if this remains. Since it may occur, a process of performing gettering and reducing its concentration is required.

  First, the surface is treated with ozone water to form a barrier film of about 1 to 5 nm, and then a gettering site is formed on the barrier layer by sputtering. The gettering site is formed by depositing an amorphous silicon film containing an argon element to a thickness of 50 nm. Thereafter, gettering is performed by performing a heat treatment at 750 ° C. for 3 minutes using a lamp annealing apparatus to remove the gettering site.

  After the gettering, the crystalline semiconductor film is formed into semiconductor layers 207 to 210 having a desired shape by etching. Subsequently, a gate insulating film 211 is formed. The thickness may be approximately 115 nm, and an insulating film containing silicon may be formed by a low pressure CVD method, a plasma CVD method, a sputtering method, or the like. In this embodiment, a silicon oxide film is formed.

  Next, tantalum nitride (TaN) with a thickness of 30 nm is formed as a first conductive layer over the gate insulating film, and tungsten (W) with a thickness of 370 nm is formed as a second conductive layer thereon. In this example, the first conductive layer is TaN having a thickness of 30 nm and the second conductive layer is W having a thickness of 370 nm. However, the present invention is not limited to this, and the first conductive layer and the second conductive layer are Both may be formed of an element selected from Ta, W, Ti, Mo, Al, Cu, Cr, and Nd, or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. The film thickness may be in the range of 20 to 100 nm for the first conductive layer and 100 to 400 nm for the second conductive layer. In this embodiment, a two-layer structure is used, but a single layer may be used, or a three-layer or more structure may be used.

  Next, in order to form the electrode and the wiring by etching the conductive layer, a mask made of a resist is formed through an exposure process by photolithography. In the first etching process, etching is performed under the first etching condition and the second etching condition. Etching is performed using a resist mask to form gate electrodes and wirings. Etching conditions may be selected as appropriate.

In this method, an ICP (inductively coupled plasma) etching method was used. As the first etching conditions, CF ₄ , Cl ₂ and O ₂ are used as etching gases, the respective gas flow ratios are set to 25/25/10 (sccm), and 500 W is applied to the coil electrode at a pressure of 1.0 Pa. Etching is performed by applying RF (13.56 MHz) power to generate plasma. 150 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. The W film is etched under the first etching condition so that the end portion of the first conductive layer is tapered. Under the first etching conditions, the etching rate for the W film is 200.39 nm / min, the etching rate for TaN is 80.32 nm / min, and the selection ratio of W to TaN is about 2.5. Further, the taper angle of the W film is about 26 degrees depending on the first etching condition.

Subsequently, the etching is performed under the second etching condition. Without removing the resist mask, CF ₄ and Cl ₂ are used as etching gases while leaving the mask, and the gas flow ratio is 30/30 (sccm), the pressure is 1.0 Pa, and the coil type electrode is 500 W. The RF (13.56 MHz) power is applied to generate plasma, and etching is performed for about 15 seconds. 20 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. Under the second etching condition in which CF ₄ and Cl ₂ are mixed, the W film and the TaN film are etched to the same extent. In the first etching process, the ends of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side.

Next, a second etching process is performed without removing the resist mask. In the second etching process, SF ₆ , Cl _2, and O ₂ are used as etching gases, the respective gas flow ratios are set to 24/12/24 (sccm), and the coil-side power is supplied with a pressure of 1.3 Pa. 700 W of RF (13.56 MHz) power is applied to generate plasma and perform etching for about 25 seconds. 10 W RF (13.56 MHz) power was also applied to the substrate side (sample stage), and a substantially negative self-bias voltage was applied. Under this etching condition, the W film was selectively etched to form a second shape conductive layer. At this time, the first conductive layer is hardly etched. A gate electrode including the first conductive layers 212a to 215a and the second conductive layers 212b to 215b is formed by the first and second etching processes.

Then, the first doping process is performed without removing the resist mask. Thereby, an impurity imparting N-type is added to the crystalline semiconductor layer at a low concentration. The first doping process may be performed by an ion doping method or an ion implantation method. The ion doping method may be performed at a dose of 1 × 10 ^{13 to} 5 × 10 ¹⁴ atoms / cm ² and an acceleration voltage of 40 to 80 kV. In this embodiment, the acceleration voltage is 50 kV. As the impurity element imparting N-type, an element belonging to Group 15 can be used, and typically phosphorus (P) or arsenic (As) is used. In this example, phosphorus (P) was used. At that time, the first conductive layer as a mask, a first impurity region self-aligned manner low concentration impurity is added ^- to form a (N region).

Subsequently, the resist mask is removed. Then, a new mask made of resist is formed, and the second doping process is performed at a higher acceleration voltage than the first doping process. In the second doping process, an impurity imparting N-type is added. The conditions for the ion doping method may be that the dose is 1 × 10 ^{13 to} 3 × 10 ¹⁵ atoms / cm ² and the acceleration voltage is 60 to 120 kV. In this embodiment, the dose is set to 3.0 × 10 ¹⁵ atoms / cm ² and the acceleration voltage is set to 65 kV. In the second doping treatment, the second conductive layer is used as a mask for the impurity element, and doping is performed so that the impurity element is also added to the semiconductor layer located below the first conductive layer.

When the second doping is performed, a portion of the crystalline semiconductor layer that overlaps with the first conductive layer does not overlap with the second conductive layer or a portion that is not covered with the mask. Regions (N ⁻ region, Lov region) are formed. An impurity imparting N-type is added to the second impurity region in a concentration range of 1 × 10 ^{18 to} 5 × 10 ¹⁹ atoms / cm ³ . Further, in the crystalline semiconductor film, the exposed portion (third impurity region: N ⁺ region) which is not covered with the first shape conductive layer or the mask and is exposed to 1 × 10 ^{19 to} 5 Impurities imparting N-type are added at a high concentration in the range of × 10 ²¹ atoms / cm ³ . In addition, the semiconductor layer has an N ⁺ region, but there is a portion that is partially covered only by the mask. The concentration of impurity imparting N-type in this portion, since the remains of the impurity concentration added in the first doping process, subsequently the first impurity regions ^- is referred to as (N region).

  In this embodiment, each impurity region is formed by two doping processes, but the present invention is not limited to this, and a desired impurity concentration is obtained by performing doping once or a plurality of times by appropriately setting conditions. An impurity region may be formed.

Next, after removing the resist mask, a new resist mask is formed, and a third doping process is performed. A fourth impurity region (impurity element imparting a conductivity type opposite to the first conductivity type and the second conductivity type is added to the semiconductor layer to be a P-channel TFT by the third doping treatment ( P ⁺ region) and a fifth impurity region (P ⁻ region) are formed.

In the third doping process, a fourth impurity region (P ⁺ region) is formed in a portion that is not covered with the resist mask and does not overlap with the first conductive layer. A fifth impurity region (P ⁻ region) is formed in a portion that is not covered and overlaps with the first conductive layer and does not overlap with the second conductive layer. As the impurity element imparting P-type, elements of Group 13 of the periodic table such as boron (B), aluminum (Al), and gallium (Ga) are known.

In this embodiment, boron (B) is selected as the P-type impurity element for forming the fourth impurity region and the fifth impurity region, and is formed by ion doping using diborane (B ₂ H ₆ ). . As conditions for the ion doping method, the dose was 1 × 10 ¹⁶ atoms / cm ² and the acceleration voltage was 80 kV.

  Note that in the third doping treatment, the semiconductor layers 207 and 209 forming the N-channel TFT are covered with a resist mask.

Here, phosphorus is added to the fourth impurity region (P ⁺ region) and the fifth impurity region (P ⁻ region) at different concentrations by the first and second doping processes. However, in any of the fourth impurity region (P ⁺ region) and the fifth impurity region (P ⁻ region), the concentration of the impurity element imparting P-type is 1 × 10 5 by the third doping treatment. Doping is performed so as to be ^{19 to} 5 × 10 ²¹ atoms / cm ² . Therefore, the fourth impurity region (P ⁺ region) and the fifth impurity region (P ⁻ region) function without problems as the source region and the drain region of the P-channel TFT.

In this embodiment, the fourth impurity region (P ⁺ region) and the fifth impurity region (P ⁻ region) are formed by one third doping, but the present invention is not limited to this. The fourth impurity region (P ⁺ region) and the fifth impurity region (P ⁻ region) may be formed by a plurality of doping processes as appropriate depending on the conditions of the doping process.

By these doping treatments, the first impurity region 216 (N ⁻ region), the second impurity region 217 (N ⁻ region, Lov region), the third impurity regions 218 and 219 (N ⁺ region), the fourth Impurity regions 220 and 221 (P ⁺ regions) and fifth impurity regions 222 and 223 (P ⁻ regions) are formed.

  Thereafter, a first passivation film 224 is formed over the gate electrode and the gate insulating film. As the first passivation film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film containing hydrogen is formed.

  Subsequently, a first interlayer insulating film 225 is formed. As a 1st interlayer insulation film, after apply | coating a siloxane polymer whole surface, it is made to dry by heat processing for 10 minutes for 50-200 degreeC, and also the baking process for 300-450 degreeC for 1 to 12 hours is performed. By this baking, a siloxane-based film having a skeleton structure composed of a bond of silicon (Si) and oxygen (O) having a thickness of 1 μm is formed on the entire surface. In this step, since the siloxane-based polymer is baked and the semiconductor layer can be hydrogenated by hydrogen in the first passivation film 224, the number of steps can be reduced and the process can be simplified. Is possible.

  As the first interlayer insulating film, an inorganic insulating film, an organic material resin, a low-k material, or the like formed by a known method such as a CVD method can be used.

  After that, a silicon nitride oxide film or a silicon oxynitride film may be formed by a CVD method so as to cover the first interlayer insulating film 225. This film functions as an etching stopper when a conductive film formed later is etched, and can prevent over-etching of the interlayer insulating film. Further, a silicon nitride film may be formed thereon by sputtering. Since this silicon nitride film has a function of suppressing the movement of alkali metal ions, it is possible to suppress the movement of metal ions such as lithium element and sodium from the pixel electrode formed later to the semiconductor thin film.

  Next, patterning and etching of the first interlayer insulating film are performed to form contact holes reaching the thin film transistors 203 to 206, a groove-shaped opening 227, and an interlayer insulating film removing portion 228 around the substrate.

Etching of the contact hole 226, the opening 227, and the interlayer insulating film removing portion 228 is performed by etching a siloxane-based film using a mixed gas of CF ₄ , O _2, and He, and subsequently using a CHF ₃ gas as a gate insulating film. A silicon oxide film is formed by etching and removing.

  Subsequently, a metal film is stacked in the contact hole 226 and patterned to form a source electrode and a drain electrode. In this embodiment, a titanium-aluminum alloy film and a titanium film are stacked on a titanium film containing nitrogen atoms, and each layer is formed to 100 nm / 350 nm / 100 nm, and then patterned and etched into a desired shape to form three layers. Source electrodes and drain electrodes 229 to 235 and a pixel electrode 236 are formed.

  The titanium film containing nitrogen atoms in the first layer is formed by sputtering using a target of titanium and a flow rate of nitrogen and argon of 1: 1. When the above-described titanium film containing a nitrogen atom is formed over an interlayer insulating film of a siloxane-based film, a wiring that is difficult to peel off and has a low resistance connection to the semiconductor region can be formed.

  In this embodiment, the top gate type polysilicon TFT is formed in both the drive circuit portion and the pixel portion. However, the TFT in the pixel portion may be a TFT having amorphous silicon as an active layer or a TFT having microcrystalline silicon as an active layer. Further, it is naturally possible to use a bottom gate type TFT.

  Simultaneously with the formation of the source electrode and the drain electrode, the same material is used to cover the inner surface of the groove-shaped opening 227 and the end surface of the interlayer insulating film removal portion 228 in the peripheral portion of the substrate, thereby forming a first protective film 237.

  Next, a second interlayer insulating film 238 is formed over the entire surface of the substrate. The second interlayer insulating film 238 can be formed using a material similar to that of the first interlayer insulating film 225. In this embodiment, the second interlayer insulating film 238 is formed of the same siloxane-based film as the first interlayer insulating film.

  Subsequently, a contact hole 239 connected to the pixel electrode, a groove-shaped opening 240, and an interlayer insulating film removing portion 241 around the substrate are formed under the same conditions as those for etching the first interlayer insulating film.

  In this embodiment, the first interlayer insulating film 225 and the second interlayer insulating film 238 are both formed of siloxane-based films. However, the configuration of the interlayer insulating film is not limited to this, and the first It is possible to appropriately change a combination such as an organic film as the interlayer insulating film and an inorganic film as the second interlayer insulating film, or the reverse combination thereof, a combination of organic and organic, and a combination of inorganic and inorganic. Depending on the water permeability of the selected interlayer film, a protective film may be formed on only one of the first interlayer insulating film and the second interlayer insulating film.

After the opening is formed in the second interlayer insulating film 238, a first electrode serving as an anode of the light emitting element is formed in the contact hole 239 connected to the pixel electrode. The electrode of the light emitting element is a laminate of Al-Si (260a) \ TiN (260b) \ ITSO (260c). Here, Al—Si is aluminum containing about 1 to 5 atomic% of silicon, and ITSO is a material in which SiO ₂ is mixed with ITO.

  Simultaneously with the formation of the anode of the light emitting element, the end surface of the interlayer insulating film 238 in the interlayer insulating film removing portion 241 inside the groove-shaped opening 240 and around the substrate is covered with the protective film 242. The protective film may be formed of the electrodes 260a to 260b of the light emitting element, and all three layers a to c may be used, or any one layer or two layers may be used.

  Next, an insulator 243 is formed so as to cover the end face of the first electrode. The insulator 243 can be formed using an inorganic or organic material. There are silicon oxide, silicon oxynitride, siloxane, acrylic, polyimide, and the like. Forming using a photosensitive organic material is preferable because the shape of the opening has a shape in which the radius of curvature continuously changes, and step breakage or the like hardly occurs when the light emitting layer is deposited.

And using a vapor deposition apparatus, vapor deposition is performed, moving a vapor deposition source. For example, vapor deposition is performed in a deposition chamber evacuated to a vacuum degree of 5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Torr. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and is scattered in the direction of the substrate by opening the shutter at the time of vapor deposition. The vaporized organic compound is scattered upward and deposited on the substrate through the opening provided in the metal mask, and the light emitting layer 244 (hole transport layer, hole injection layer, electron transport layer, electron injection layer is formed). Formed).

  In this example, the light emitting layer is formed by vapor deposition, so a low molecular light emitting material is used. However, the light emitting layer has other high molecular weight or medium molecules having properties between low molecules and high molecular weight. The molecular material can be applied by spin coating or an ink jet method by dissolving in a solvent. Further, not only organic materials but also composite materials with inorganic materials can be used.

  The light-emitting mechanism of the light-emitting element recombines electrons injected from the cathode and holes injected from the anode at the emission center in the organic compound layer by applying a voltage with the organic compound layer sandwiched between a pair of electrodes. Thus, it is said that molecular excitons are formed, and when the molecular excitons return to the ground state, energy is emitted and light is emitted. Singlet excitation and triplet excitation are known as excited states, and light emission is considered to be possible through either excited state.

  The light emitting layer usually has a laminated structure, and this laminated structure is typically a structure of “hole transport layer / electroluminescent layer / electron transport layer”. Since this structure has a very high luminous efficiency, this structure is employed in almost all light emitting devices that are currently under research and development. In addition, a hole injection layer / hole transport layer / electroluminescent layer / electron transport layer or hole injection layer / hole transport layer / electroluminescent layer / electron transport layer / electron injection layer in this order on the anode A laminated structure is also good. You may dope a fluorescent pigment | dye etc. with respect to an electroluminescent layer.

Next, the second electrode 245 is formed as a cathode over the light-emitting layer. The second electrode 245 may be formed using a thin film containing a metal (Li, Mg, Cs) having a low work function. Further, a transparent conductive film (ITO (indium oxide tin oxide alloy), indium zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), etc.) laminated on a thin film containing Li, Mg, Cs, etc. It is preferable to form a laminated film. The film thickness may be set as appropriate so as to act as a cathode, but may be formed to a thickness of about 0.01 to 1 μm by electron beam evaporation.

  Such a light emitting element can be displayed in a single color or multicolor depending on the selection and arrangement of the light emitting layer. For monochromatic display, all light-emitting elements may be manufactured using the same material, but there are several methods for multicolor display. One is a painting method. In the color painting method, a multicolor display is obtained by separately painting a light emitting layer that emits light in a desired color in a necessary portion. The other is a color conversion method. In this method, the light emitting layer is formed in the same manner, a color conversion layer is provided only in a necessary portion, and the light from the light emitting layer is converted into a desired color by passing through the color conversion layer to obtain a multicolor display. The other method is a method of providing a color filter on the white light emitting element. This realizes multicolor display by forming a light emitting layer emitting white light on the entire surface of the pixel portion and passing it through a color filter. In any method, when a full color display is desired, each pixel is formed so that there are three primary colors of RGB light. Thus, the light emitting device can perform single color, multicolor, and full color display.

  When the light-emitting element 246 is completed in this manner, the counter substrate 248 is fixed to the element substrate using a sealing material 247 made of a non-water-permeable material, and sealing is performed. The sealing material 247 made of a non-water-permeable material is covered with a protective film in the groove-shaped openings 227 and 240 around the insulating film on which the protective film is formed and the interlayer insulating film removing portions 228 and 241 around the substrate. If it is formed so as to cover the end face of the interlayer insulating film, the water inlet and the entrance path are more firmly blocked, which greatly contributes to the improvement of reliability. As the sealing material 247 made of this water-impermeable material, a moisture-impermeable ultraviolet curable resin or the like may be used.

  Through the above steps, an electroluminescent device that is resistant to deterioration due to water entering from the outside can be manufactured, and the reliability of the electroluminescent device can be greatly improved. In this embodiment, only one groove-shaped opening around the interlayer insulating film in the sealing portion is provided. However, a plurality of openings can be provided. By providing a plurality of openings, reliability is further improved. Will be improved.

  In this example, examples of the fifth and sixth embodiments will be described with reference to FIGS. Although FIG. 17 shows a single-layer structure of the interlayer insulating film, it can be considered basically the same as the structure of the first embodiment. The structure of the first electrode of the light emitting element is different, which will be described later.

  17 is a cross-sectional view taken along line f-f ′ in FIG. 3. In FIG. 17, an etching stopper film 250 is formed in the groove-shaped opening at the periphery of the interlayer insulating film and the interlayer insulating film removing portion at the periphery of the substrate. The etching stopper film 250 can be formed simultaneously with the formation of the semiconductor layer in the transistor of the driver circuit portion or the pixel portion. It functions as an etching stopper when etching the interlayer insulating film 251 and functions to improve the adhesion of a sealing material made of a non-permeable material by reducing the occurrence of etching residue and unevenness.

  Except for the presence of the etching stopper film 250, the steps up to the point where the source electrode and the drain electrode are formed are the same as those in the first embodiment, and thus the description thereof is omitted. When the source electrode and the drain electrode are formed, the first electrode 252 of the light-emitting element is formed so as to be in contact with the electrode 255 of the switching TFT in the pixel portion. In this embodiment, since the first electrode 252 of the light emitting element is formed over the interlayer insulating film in which the source electrode and the drain electrode are formed, it is not necessary to manufacture the second interlayer insulating film. The material of the first electrode 252 can be the same as that of the first electrode of Example 1, and the process after manufacturing the first electrode is the same as that of Example 1, and therefore will be omitted.

  Here, if the first electrode is formed of a transparent conductive film typified by ITO, light can be extracted in the direction of the substrate 200. If the second electrode is also made of a transparent material at the same time, light can be extracted in both directions of the substrate 200 and the counter substrate 248.

  Next, FIG. 18 shows a method for manufacturing the portion shown in FIG. 18A is a cross-sectional view taken along the line a-a ′ of FIG. 3, and FIG. 18B is a top view of FIG. 3c. The adjacent (b) and (b) diagrams show the same process. 18A and 18B, the left side is the FPC direction and the right side is the display unit direction. Note that FIG. 18 (b) is different from the orientation of FIG. 3c.

  In this embodiment, when a transistor is formed in the display portion and the first interlayer insulating film is formed, a base insulating film 301 is formed on the substrate 300 in a wiring portion connecting the external terminal and the internal circuit. An etching stopper film 302 (silicon film) is formed at a portion where the interlayer on the insulating film 301 is removed, and an insulating film 303 that functions as a gate insulating film covering the etching stopper film 302 (silicon film) and the base insulating film 301 is formed. Then, a first interlayer insulating film 304 is formed so as to cover it. An acrylic film or a siloxane film can be used as the first interlayer film, but a siloxane film is used in this embodiment (FIG. 18A).

  Subsequently, the end surface of the first interlayer insulating film 304 is etched so as to have a taper shape, and the interlayer film is removed to form an interlayer insulating film removing portion 305 in the periphery of the substrate. Since the etching stopper film 302 (silicon film) serving as an etching stopper film is formed in advance in the interlayer insulating film removing portion 305, the surface of the interlayer insulating film removing portion 305 after the removal is flat, and the etching residue and the underlying layer are removed. Concavities and convexities are not generated due to burrs. (FIG. 18 (b))

  Next, a metal film 306 to be a wiring is formed. This metal film may be formed of the same material as the source electrode and the drain electrode in the pixel portion and the drive circuit portion. Specific materials are the same as those of the source electrode and the drain electrode in Example 1. (FIG. 18 (c))

  The metal film 306 is etched simultaneously with the etching for forming the source electrode and the drain electrode, so that the wiring 307 is formed. At this time, a portion of the etching stopper film 302 (silicon film) formed in the interlayer insulating film removing portion 305 that is not covered with the wiring 307 is removed by this etching. Of the etching stopper film 302 (silicon film), a film which is not located under the wiring 307 and is formed at a position 308 below the remaining interlayer insulating film 304 is formed in advance after the wiring etching. If the etching stopper film 309 (silicon film) positioned below the 307 is formed in a shape that separates, even if the etching stopper film 302 is formed of a conductive material, adjacent wirings are short-circuited. do not do. (FIG. 18 (d))

  By forming the etching stopper film 302 (silicon film) as an etching stopper, unevenness generated in the interlayer insulating film removal portion 305 can be prevented, and generation of large unevenness on the wiring formed thereafter can be suppressed. It is possible to maintain the adhesion of the sealing material made of a water-impermeable material and to reduce the amount of water entering from the place where the adhesion of the sealing material is poor.

  By adopting such a configuration, it is possible to remove the interlayer insulating film in the wiring portion that connects the external terminal portion (FPC, etc.) and the internal circuit, and to prevent the interlayer insulating film from touching the outside air. It can be greatly reduced and contributes to the improvement of the reliability of the electroluminescent device.

  Further, after removing the first interlayer insulating film at the peripheral portion of the substrate by tapering the end face, and before forming a metal for wiring, nitriding of a silicon nitride film, a carbon nitride film, etc. by a CVD method thereon Forming a film is useful for the purpose of preventing moisture from entering from the end face. By forming such a nitride film (not shown), higher reliability can be obtained.

  By the way, in this method, the removal of the first interlayer insulating film in the peripheral portion of the substrate is performed in the same process as the contact hole opening of the pixel portion and the drive circuit portion, and a nitride film is formed after the removal of the first interlayer insulating film. Then, in the pixel portion and the driver circuit portion, there is a possibility that conduction between the lower layer wiring and the like to be performed through the contact hole cannot be established with the wiring formed in the first interlayer insulating film shape. Therefore, it is desirable to remove the nitride film in a portion where electrical contact with the lower portion is necessary before forming the wiring metal. In addition, when a nitride film is formed on the first interlayer insulating film, it is possible to prevent moisture from entering from the end face of the interlayer insulating film in the contact hole portion at the same time, thereby obtaining higher reliability. Can do.

  In this embodiment, an example of a pixel structure in an electroluminescent device in which the structure of the present invention is used will be described with reference to FIG.

  FIG. 19 shows an element structure for one pixel. The display portion in FIG. 3 is formed by arranging a large number of such pixels in a matrix. Of course, this pixel row property is an example, and any other possible pixel configuration may be used.

  In FIG. 19, a top emission structure is adopted. One pixel includes a source line 400, a driving TFT gate line 401, an anode line 402, an erasing gate line 403, a writing gate line 404, an erasing TFT 405, a writing TFT 406, a driving TFT 407, a display TFT 408, an AC driving diode 409, and a capacitor. 410, a drive TFT drain electrode 411, and a drive TFT gate line 412.

  A light emitting element 413 is formed on the upper portion via an insulating film, and the anode or cathode of the light emitting element is connected to the drain electrode 411 of the driving TFT.

    In this embodiment, a configuration of a source driver necessary for displaying an image in an electroluminescent device will be described with reference to FIG.

    In the row in which the gate signal line is selected, the shift register 500 (SR) sequentially outputs sampling pulses from the first stage according to the clock pulse 504 and the start pulse 505. The first latch circuit 501 captures the video signal at the timing when the sampling pulse is input, and the video signal captured at each stage is held in the first latch circuit 501.

  With the sampling pulse output from one shift register 500, the three latch circuits A, B, and C in the first latch circuit 501 are input from the video lines DATA01-20, DATA21-40, and DATA41-60, respectively. Capture the signal. In the sampling pulse output from the first-stage shift register 500, among the source signal lines from S01 to S1920, video signals to be charged / discharged to the source signal lines from S01 to S60 are captured. In the first latch circuit that receives the sampling signal of the first-stage shift register 500 and captures the video signal, the latch circuit A is an image corresponding to the source signal lines S01 to S20, B is S21 to S40, and C is S41 to S60. Hold the signal. Thereafter, the first latch circuit that takes in the video signal in response to the sampling pulse output from the second-stage shift register takes in the video signals of the source signal lines from S61 to S120, and latches A, B, and C. The circuits hold video signals for the source signal lines S61 to S80, S81 to S100, and S101 to S120, respectively, and similarly, the 32-stage shift register has video signals for the source signal lines for S1861 to S1920. When one of these is fetched and held, the fetching of one line is completed.

  When the latch pulse (LAT) 506 is output after the capturing of the video signal for one row is completed, the video signals held in the first latch circuit 501 are transferred all at once to the second latch circuit 502. All signal lines are charged and discharged at the same time. A level shifter and a buffer for setting the output from the second latch circuit 502 to a desired size may be provided as appropriate.

  The above operation is repeated from the first line to the last line, and writing of one frame is completed. Thereafter, the same operation is repeated to display an image.

  The source driver having this configuration is merely an example, and the present invention can be applied to any source driver configuration.

  In this example, a method for forming a tapered shape on an end surface of an insulating film as described in Embodiment Mode 5 will be described.

  If etching can be performed by isotropic etching such as wet etching, a tapered shape can be easily obtained if there is a margin for etching and a certain film thickness.

  In this embodiment, a method for forming a tapered shape in an insulating film in anisotropic etching such as dry etching will be described.

  First, a method for processing an object into a desired shape by dry etching using an etching mask manufactured by a normal method will be briefly described with reference to FIG.

  First, a mask material 602 such as a photosensitive resist or polyimide is formed on the entire surface of the workpiece 601 by coating or the like (FIG. 21A-1). In this description, a positive resist will be described as an example.

  Subsequently, after the material in the resist is evaporated and prebaked at a low temperature for stabilization, the resist is exposed through a photomask 603 having a desired shape and partially exposed. (FIG. 21 (A) -2)

  After the portion exposed by the exposure is dissolved and removed with a developer (FIG. 21A-3), baking is performed to improve the adhesion of the resist and to improve the resistance to the etchant used in the next step. Thus far, a mask for etching the object is formed. The process so far is called photolithography.

  Then, by using this mask and using an appropriate etchant and etching the target object, the target object can be processed into a desired shape. (FIG. 21 (A) -4)

  Here, since the end face of the etching mask has a large angle with respect to the target object located below, the shape of the end face of the lower target object is reflected to reflect the shape when anisotropic etching such as dry etching is performed. End up. If the interlayer insulating film in the periphery of the substrate is removed by such a method and the wiring is formed and used, the etching residue of the wiring as described in the fourth and fifth embodiments occurs on the end surface of the interlayer insulating film, and the defect due to the wiring short-circuit Will cause.

  Therefore, when forming a mask by photolithography, a slit 605 having a width narrower than the resolution limit of the exposure apparatus used for exposure is formed at the end of the photomask 604 where the tapered shape is to be formed. Mask material such as resist exposed through slits and patterns with a width narrower than the resolution of the exposure apparatus is not completely exposed at that portion, and a mask with a reduced film thickness remains even after the exposed portion is removed with a developer. To do.

  In this way, by forming slits or holes with a width less than the exposure resolution of the exposure apparatus in the photomask, incomplete exposure as described above between the non-exposed part and the fully exposed part in the photosensitive mask material such as resist. By providing the portion, a tapered shape can be formed on the end face of the etching mask.

  Using this etching mask with a taper shape, if anisotropic etching, typified by dry etching, is performed under conditions that etch both the underlying object and the mask, the object is etched and etched simultaneously. The mask disappears from the thin film thickness, and the object that has been newly exposed to the etching atmosphere is sequentially etched by the disappearance of the etching mask, so that the shape substantially reflects the shape of the etching mask. The object can be obtained. (Fig. 21 (B))

  Thus, by using an etching mask having a tapered shape on the end face, it is possible to obtain an object having the same tapered shape on the end face, in the fifth embodiment, an interlayer insulating film.

  By the way, the shape of the photosensitive material after development can be freely formed depending on the shapes of slits, patterns and holes of the photomask at the time of exposure. An example is shown in FIG. FIG. 22 is an SEM photograph and a schematic diagram of a photomask obtained by forming a siloxane film on a substrate, applying a resist thereon, exposing with a photomask 700, and etching by dry etching. In the SEM photograph, the resist is exposed by a photomask having a pattern such as the photomask 700 shown below.

  A normal photomask exposes only the portion 701. In FIG. 22, a cross-sectional shape as shown in the SEM photograph can be obtained by forming a pattern 702 below the resolution limit of the exposure apparatus on the photomask. it can.

  As shown in FIG. 22, it is possible to give the object various shapes by changing the shape of the pattern 702 below the resolution limit of the exposure apparatus. By using the etching mask formed in this manner and appropriately changing the object and the etching conditions, it becomes possible to produce a shape that could not be produced so far.

  As an electronic device to which the present invention is applied, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook type personal computer, a game device, portable information Plays back a recording medium such as a terminal (mobile computer, mobile phone, portable game machine, electronic book, etc.) and recording medium (specifically, Digital Versatile Disc (DVD)) and displays the image. And the like). Specific examples of these electronic devices are shown in FIGS.

  FIG. 23A illustrates a wall-mounted display device including a housing 2001, a display portion 2003, a speaker portion 2004, and the like. The present invention is applied to manufacture of the display portion 2003. By using the present invention, long-term reliability can be ensured.

FIG. 23B illustrates a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The present invention can be applied to the display portion 2102. Digital still cameras are often used outdoors and are often subjected to harsher conditions than indoors, but the use of the present invention can provide long-term reliability even in relatively harsh conditions. It becomes.

  FIG. 23C shows a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. The present invention can be applied to the display portion 2203. Unlike a desktop, a notebook personal computer can be used with you. Like a digital still camera, it can be used in worse conditions than a desktop computer monitor. By utilizing the present invention, it is possible to ensure longer-term reliability even under such conditions.

  FIG. 23D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The present invention can be applied to the display portion 2302. Mobile computers are often used outdoors and are often subjected to more severe conditions than indoor use, but by using the present invention, long-term reliability can be obtained even in relatively severe conditions. Become.

  FIG. 23E illustrates a portable game machine, which includes a housing 2401, a display portion 2402, speaker portions 2403, operation keys 2404, a recording medium insertion portion 2405, and the like. The present invention can be applied to the display portion 2402. Portable game consoles are often used outdoors, and are often subjected to more severe conditions than indoor use. By using the present invention, long-term reliability can be obtained even in relatively severe conditions. Is possible.

  As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. In addition, since the reliability of the product is improved, the reliability as a manufacturer can be increased.

FIG. 3 illustrates Embodiment 1; Diagram showing conventional configuration A diagram showing a top view of an electroluminescent device The figure showing the variation of Embodiment 1 The figure showing Embodiment 2. The figure showing Embodiment 3. The figure showing Embodiment 3. Diagram showing conventional configuration The figure showing Embodiment 4. The figure showing Embodiment 4. The figure showing Embodiment 5. The figure showing Embodiment 6. The figure showing Embodiment 6. The figure showing Example 1 The figure showing Example 1 The figure showing Example 1 The figure showing Example 2. The figure showing Example 2. The figure showing Example 3 The figure showing Example 4 The figure showing Example 5 SEM photograph representing Example 5 FIG. 7 illustrates an example of an electronic device

Claims (34)

At least one has a light emitting element sandwiched between a pair of translucent substrates,
The light emitting element is formed in contact with one or both of the first interlayer insulating film and the second interlayer insulating film,
In the outer periphery of the first interlayer insulating film and the second interlayer insulating film,
A first opening penetrating the first interlayer insulating film;
A first non-permeable protective film covering the first opening and the first interlayer insulating film in the first opening;
And a second opening penetrating the second interlayer insulating film. At least one has a light emitting element sandwiched between a pair of translucent substrates,
The light emitting element is formed in contact with one or both of the first interlayer insulating film and the second interlayer insulating film;
In the outer periphery of the first interlayer insulating film and the second interlayer insulating film,
A first opening penetrating the first interlayer insulating film;
A first non-permeable protective film covering the first opening and the first interlayer insulating film in the first opening;
A second opening penetrating the second interlayer insulating film;
A second impermeable layer that covers the second opening and the second interlayer insulating film in the second opening and is in contact with the first impermeable protective film on the bottom surface of the second opening. A light-emitting device having a protective film. At least one has a light emitting element sandwiched between a pair of translucent substrates,
The light emitting element is formed in contact with one or both of the first interlayer insulating film and the second interlayer insulating film;
In the outer periphery of the first interlayer insulating film and the second interlayer insulating film,
A first opening penetrating the first interlayer insulating film;
A first non-permeable protective film covering the first opening and the first interlayer insulating film in the first opening;
A second opening penetrating the second interlayer insulating film;
A second impermeable layer that covers the second opening and the second interlayer insulating film in the second opening and is in contact with the first impermeable protective film on the bottom surface of the second opening. Sex protective film,
A light-emitting device, wherein the pair of substrates are fixed with a water-impermeable composition in a region where the first opening and the second opening are formed, or outside the region. 4. The light emitting device according to claim 2, wherein the second water-impermeable protective film is formed of the same material as an anode or a cathode of the light emitting element. The light emitting device according to claim 1, wherein a thin film transistor is connected to the light emitting element. 6. The light emitting device according to claim 5, wherein the first water-impermeable protective film is formed of the same material as that used for a source electrode and a drain electrode of the thin film transistor. The light emitting device according to claim 1, wherein a semiconductor film is formed below the first opening. The light emitting device according to claim 1, wherein a metal film is formed below the first opening. 7. The light emitting device according to claim 5, wherein a semiconductor film is formed below the first opening, and the semiconductor film is made of the same material as that of the active layer of the thin film transistor. 7. The light emitting device according to claim 5, wherein a metal film is formed below the first opening, and the metal film is made of the same material as that of the gate electrode of the thin film transistor. The bottom surface of the first opening and at least a part of the bottom surface of the second opening are formed at the same position in the surface of the substrate. The light emitting device according to one item. The bottom surface of the first opening and the bottom surface of the second opening are formed at different positions in the plane of the substrate. The light-emitting device of description. The light emitting device according to any one of claims 1 to 12, wherein a plurality of the first openings and the second openings are formed. The light emitting device according to claim 1, wherein a plurality of the first openings and the second openings are formed. The light emitting device according to claim 1, wherein at least one of the first interlayer insulating film and the second interlayer insulating film is formed of an organic material. . 16. The light emitting device according to claim 1, wherein at least one of the first interlayer insulating film and the second interlayer insulating film is formed of an inorganic material. 17. The device according to claim 1, wherein at least one of the first interlayer insulating film and the second interlayer insulating film is formed of a siloxane-based film. Light emitting device. The light-emitting device according to claim 15, wherein the organic material is acrylic or polyimide. 19. The light-emitting device according to claim 1, wherein the first non-permeable protective film or the second non-permeable protective film is a silicon nitride film. 19. The light-emitting device according to claim 1, wherein the first water-impermeable protective film and the second water-impermeable protective film are silicon nitride films. At least one has a light emitting element sandwiched between a pair of translucent substrates,
The light emitting element is formed in contact with an interlayer insulating film,
The end of the interlayer insulating film does not reach the end of the substrate,
An end portion of the interlayer insulating film is tapered. At least one has a light emitting element sandwiched between a pair of translucent substrates,
The light emitting element is formed in contact with an interlayer insulating film,
The end of the interlayer insulating film does not reach the end of the substrate,
The end portion of the interlayer insulating film is tapered,
A light-emitting device, wherein a non-permeable protective film is formed at an end of the interlayer insulating film. At least one has a light emitting element sandwiched between a pair of translucent substrates,
The light emitting element is formed in contact with an interlayer insulating film,
The end of the interlayer insulating film does not reach the end of the substrate,
The end portion of the interlayer insulating film is tapered,
A water-impermeable protective film is formed at the end of the interlayer insulating film,
The light-emitting device, wherein the pair of substrates are fixed with a water-impermeable composition at an end region of the interlayer insulating film or outside the region. The light emitting device according to any one of claims 21 to 23, wherein a thin film transistor is connected to the light emitting element. 25. The light emitting device according to claim 21, wherein a semiconductor film is formed from a lower portion of the interlayer insulating film to an end portion of the substrate. 25. The light emitting device according to claim 1, wherein a metal film is formed from a lower portion of the interlayer insulating film to an end portion of the substrate. 25. The light emitting device according to claim 24, wherein a semiconductor film is formed from a lower portion of the interlayer insulating film to an end portion of the substrate, and the semiconductor film is made of the same material as an active layer of the thin film transistor. 25. The light emitting device according to claim 24, wherein a metal film is formed from a lower portion of the interlayer insulating film to an end portion of the substrate, and the metal film is made of the same material as a gate electrode of the thin film transistor. The light-emitting device according to any one of claims 21 to 28, wherein the interlayer insulating film is formed of an organic material. The light-emitting device according to any one of claims 21 to 28, wherein the interlayer insulating film is formed of an inorganic material. The light emitting device according to any one of claims 21 to 28, wherein the interlayer insulating film is formed of a siloxane-based film. 30. The light-emitting device according to claim 29, wherein the organic material is acrylic or polyimide. 33. The light emitting device according to claim 21, wherein the water-impermeable protective film is a silicon nitride film. A pixel portion including a light emitting element sandwiched between a pair of translucent substrates at least one of;
An external connection for receiving signals from outside,
A plurality of wirings connecting the pixel portion and the external connection portion;
The pair of substrates are fixed with a water-impermeable composition between the pixel portion and the external connection portion,
The light emitting element is formed in contact with an interlayer insulating film,
A part of the interlayer insulating film is located between adjacent wirings in the plurality of wirings,
The light emitting device according to claim 1, wherein the wiring is provided with a plurality of bent portions densely at a lower portion or an inner portion where the substrate is fixed with the water-impermeable composition.