JP2005108728A - Treating agent for forming transparent conductive film and method for forming transparent conductive film - Google Patents

Treating agent for forming transparent conductive film and method for forming transparent conductive film Download PDF

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JP2005108728A
JP2005108728A JP2003342599A JP2003342599A JP2005108728A JP 2005108728 A JP2005108728 A JP 2005108728A JP 2003342599 A JP2003342599 A JP 2003342599A JP 2003342599 A JP2003342599 A JP 2003342599A JP 2005108728 A JP2005108728 A JP 2005108728A
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conductive film
transparent conductive
forming
ester
carbitol
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Akiko Anegawa
晶子 姉川
Kazuo Goto
和生 後藤
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Mitsuboshi Belting Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a treating agent for a transparent conductive film, dissolving each compounding agent, and having high permeability and a low resistance value, and a method for forming the transparent conductive film. <P>SOLUTION: (1) An indium compound and (2) a tin compound are added to a mixed solvent obtained by dissolving acetylacetone, carbitol, and/or ester by stirring them. and the mixed solvent is kept at 80-180°C, and it is cooled after dissolving the indium compound and the tin compound. This solution is kept at about 50-80°C, and nitrocellulose forming a thickener is dissolved in it to make this treating agent for the transparent conductive film. In addition, preferably, ethyl carbitol is used as carbitol and butyl lactate is used as ester. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、液晶ディスプレイ、タッチパネル、太陽電池等に用いられる透明導電膜形成用処理剤ならびに透明導電膜形成方法に関する。   The present invention relates to a transparent conductive film forming treatment agent and a transparent conductive film forming method used for liquid crystal displays, touch panels, solar cells and the like.

透明導電膜の製造方法として、1)酸化錫等を直接基板に蒸着製膜する方法、ITO等をターゲットにしてスパッタリングで製膜する方法、金属アルコキシドを用いるCVD法、などの気相法と、2)錫やインジウムの有機塩を基板に塗布し熱分解する方法、導電性微粒子を含むインキを印刷・塗布する方法、などの塗布法が知られている。しかし、1)スパッタリング法やCVD法などの気相法は装置が大掛かりになり、生産性が悪いことから、近年、2)塗布法が注目を集めている。   As a method for producing a transparent conductive film, 1) a vapor deposition method such as a method of directly depositing tin oxide or the like on a substrate, a method of forming a film by sputtering using ITO or the like, a CVD method using a metal alkoxide, 2) Coating methods such as a method in which an organic salt of tin or indium is applied to a substrate and thermally decomposed, and a method in which an ink containing conductive fine particles is printed or applied are known. However, 1) gas phase methods such as sputtering and CVD require a large apparatus and have poor productivity, and in recent years, 2) coating methods have attracted attention.

このような塗布法に用いられる処理剤として、インジウム化合物に抵抗調整用として錫化合物と粘性剤として、ニトロセルロースと、溶媒としてブチルセロソルブ、ブチルカルビトール、ベンジルアセテート及びジメチルフタレートの混合溶媒とを添加混合して得られる透明導電膜性被膜形成用ペーストが開示されている。(例えば特許文献1参照)
特公昭63−25448号公報
As a treatment agent used in such a coating method, a tin compound for adjusting resistance and a nitrocellulose as a viscosity agent are added to an indium compound, and a mixed solvent of butyl cellosolve, butyl carbitol, benzyl acetate and dimethyl phthalate is added and mixed as a solvent. A transparent conductive film-forming paste obtained in this manner is disclosed. (For example, see Patent Document 1)
Japanese Examined Patent Publication No. 63-25448

前記発明においては、ニトロセルロースに起因するスクリーン印刷性の悪さと寿命の短さを改善するために、ニトロセルロースをよく溶解するセルソルブ、或いはカルビトール類を使用しているが、この溶剤系はインジウム化合物の溶解性が悪く、処理剤中の金属分濃度をあげることが困難であるという問題があった。   In the above invention, cellsolve or carbitols that dissolve nitrocellulose well are used in order to improve the poor screen printability and short life caused by nitrocellulose. There was a problem that the solubility of the compound was poor and it was difficult to increase the metal concentration in the treatment agent.

上記問題に鑑みて鋭意研究を重ねた結果、各配合剤を良く溶解し、透過率が高く、低抵抗値を有する透明導電膜形成用処理剤ならびに透明導電膜形成方法を提供する。   As a result of intensive studies in view of the above problems, a transparent conductive film forming treatment agent and a transparent conductive film forming method that dissolve each compounding agent well, have high transmittance, and have a low resistance value are provided.

即ち、本発明は、(1)インジウム化合物、(2)錫化合物、(3)増粘剤、そして(4)有機溶剤を含有する透明導電膜形成用処理剤において、(3)増粘剤がニトロセルロースであって、(4)有機溶剤がアセチルアセトンとカルビトール及び/又はエステルの混合溶剤であることを特徴とする透明導電膜形成用処理剤である。本発明はまた前記透明導電膜形成用処理剤であって、カルビトールがエチルカルビトールである;エステルが酢酸エステル及び/又は乳酸エステルである;エステルが乳酸ブチルである透明導電膜形成用処理剤である。更に、本発明は基板に前記透明導電膜形成用処理剤を塗布、乾燥の後、焼成することを特徴とした透明導電膜形成方法である。   That is, the present invention relates to (1) an indium compound, (2) a tin compound, (3) a thickener, and (4) a treatment agent for forming a transparent conductive film containing an organic solvent. A processing agent for forming a transparent conductive film, characterized in that it is nitrocellulose and (4) the organic solvent is a mixed solvent of acetylacetone and carbitol and / or ester. The present invention is also the transparent conductive film forming treatment agent, wherein carbitol is ethyl carbitol; the ester is acetate ester and / or lactic acid ester; the treatment agent for transparent conductive film formation, wherein the ester is butyl lactate. It is. Furthermore, the present invention is a method for forming a transparent conductive film, wherein the transparent conductive film forming treatment agent is applied to a substrate, dried and then fired.

本発明によれば、特定の有機溶剤を併用することで各配合剤をよく溶解し、処理剤の安定性に優れるといった効果がある。またこの処理剤により作製された透明導電膜は、高透過率で、抵抗値が低いといった特性を有する。   According to the present invention, by using a specific organic solvent in combination, there is an effect that each compounding agent is well dissolved and the stability of the treatment agent is excellent. Moreover, the transparent conductive film produced with this processing agent has characteristics such as high transmittance and low resistance.

本発明に係る透明導電膜形成用処理剤は、(1)インジウム化合物、(2)錫化合物、(3)増粘剤、そして(4)有機溶剤を含有し、(3)増粘剤がニトロセルロースであって、(4)有機溶剤がアセチルアセトンとカルビトール及び/又はエステルであることを特徴とする。   The processing agent for forming a transparent conductive film according to the present invention contains (1) an indium compound, (2) a tin compound, (3) a thickener, and (4) an organic solvent, and (3) the thickener is nitro. Cellulose, wherein (4) the organic solvent is acetylacetone and carbitol and / or ester.

(1)インジウム化合物は有機インジウム化合物であり、インジウムのエトキシド、プロポキシド、ブトキシド等のアルコキシド類、アセチルアセトナート等のキレート類、ステアレイト、オクチレート、ナフテネート等の有機酸エステル類があげられる。   (1) The indium compound is an organic indium compound, and examples thereof include alkoxides such as ethoxide of indium, propoxide and butoxide, chelates such as acetylacetonate, and organic acid esters such as stearate, octylate and naphthenate.

(2)錫化合物は、有機錫化合物であり、錫のエトキシド、プロポキシド、ブトキシド等のアルコキシド類、アセチルアセトナート等のキレート類、ステアレイト、オクチレート、ナフテネート等の有機酸エステル類があげられる。   (2) The tin compound is an organic tin compound, and examples thereof include alkoxides such as tin ethoxide, propoxide and butoxide, chelates such as acetylacetonate, and organic acid esters such as stearate, octylate and naphthenate.

(1)インジウム化合物、(2)錫化合物の添加量は限定されるものではないが、膜厚を考慮すると、処理剤中にインジウム及び錫の総金属分が1〜10重量%含有するよう各化合物を配合することが好ましい。また原子量比で、錫/(インジウム+錫)=5〜50とすることが望ましく、より低抵抗な膜を得るためには前記数値を8〜10とすることが望ましい。尚、膜の抵抗値は錫を変量することでコントロールが可能である。   The amount of addition of (1) indium compound and (2) tin compound is not limited, but considering the film thickness, each of the treatment agents contains 1 to 10% by weight of the total metal content of indium and tin. It is preferable to add a compound. Further, it is desirable that tin / (indium + tin) = 5-50 in terms of atomic weight ratio, and in order to obtain a lower resistance film, it is desirable to set the numerical value to 8-10. The resistance value of the film can be controlled by changing the amount of tin.

本発明で使用する(3)増粘剤はニトロセルロースであり、透明度が高く、低抵抗値を有する透明導電膜が得られるといった効果がある。その添加量は使用するニトロセルロースの分子量や後述する(4)有機溶剤種等により異なるが、処理剤中に1〜10重量%含有されることが好ましい。1重量%未満では、厚膜化が困難であり、また、焼成後の透明導電膜の抵抗値が満足できるものではない。10重量%を超えると焼成時に熱分解性が悪くなり、焼成後の透明導電膜の物性が悪くなる。また分子量は特に限定されるものではないが、10,500〜126,000のものが好ましく用いられる。   The (3) thickener used in the present invention is nitrocellulose, which has an effect of obtaining a transparent conductive film having high transparency and a low resistance value. The amount added varies depending on the molecular weight of the nitrocellulose used and (4) organic solvent species described later, but it is preferably contained in the treating agent in an amount of 1 to 10% by weight. If it is less than 1% by weight, it is difficult to increase the thickness, and the resistance value of the transparent conductive film after firing is not satisfactory. If it exceeds 10% by weight, the thermal decomposability will deteriorate during firing, and the physical properties of the transparent conductive film after firing will deteriorate. Moreover, although molecular weight is not specifically limited, The thing of 10,500-126,000 is used preferably.

本発明で使用する(4)有機溶剤は、アセチルアセトンとカルビトール及び/又はエステルの混合溶媒である。アセチルアセトンがインジウム化合物を溶解し、カルビトール及び/又はエステルが増粘剤であるニトロセルロースを溶解させる。カルビトール類としてはエチルカルビトール、ブチルカルビトール等が挙げられるが、なかでもより高沸点を有するエチルカルビトールが好ましく用いられる。   The organic solvent (4) used in the present invention is a mixed solvent of acetylacetone and carbitol and / or ester. Acetylacetone dissolves the indium compound and carbitol and / or ester dissolves nitrocellulose, which is a thickener. Examples of the carbitols include ethyl carbitol, butyl carbitol, and the like. Among them, ethyl carbitol having a higher boiling point is preferably used.

エステル類としては、酢酸エステル、乳酸エステルが好ましく、更に具体的には酢酸エチル、乳酸ブチル、乳酸エチル等が挙げられる。なかでもより高沸点を有する乳酸ブチルが好ましい。   Esters are preferably acetates and lactates, and more specifically include ethyl acetate, butyl lactate, and ethyl lactate. Of these, butyl lactate having a higher boiling point is preferred.

アセチルアセトンとカルビトール及び/又はエステルの混合溶剤の添加量は、インジウム化合物、ニトロセルロースの種類・添加量などにより決定されるが、アセチルアセトンはインジウム化合物100重量部に対して500〜3000重量部添加することが好ましく、カルビトールまたはエステルの添加量はニトロセルロース100重量部に対して200〜8000重量部添加することが好ましい。   The amount of the mixed solvent of acetylacetone and carbitol and / or ester is determined depending on the type and amount of the indium compound and nitrocellulose, but 500 to 3000 parts by weight of acetylacetone is added to 100 parts by weight of the indium compound. The amount of carbitol or ester added is preferably 200 to 8000 parts by weight with respect to 100 parts by weight of nitrocellulose.

透明導電膜形成用処理剤の調製方法は限定されるものではないが、所望の有機溶剤を攪拌して溶解させた混合溶剤にインジウム化合物、錫化合物を添加し、80〜180℃に保持し、インジウム化合物、錫化合物を溶解させた後冷却する。この溶液を約50〜80℃に保持し、増粘剤となるニトロセルロースを溶解させて目的の透明導電膜形成用処理剤とする。   Although the preparation method of the processing agent for transparent conductive film formation is not limited, an indium compound and a tin compound are added to a mixed solvent obtained by stirring and dissolving a desired organic solvent, and maintained at 80 to 180 ° C., The indium compound and the tin compound are dissolved and then cooled. This solution is kept at about 50 to 80 ° C., and nitrocellulose as a thickener is dissolved to obtain a target treatment agent for forming a transparent conductive film.

透明導電膜の製造方法は、例えばソーダライムガラス、石英ガラス、無アルカリガラスからなるガラス基板上に、該透明導電膜形成用処理剤をスプレー、ディップ、ロールコ−ト、スピンコート等の方法で塗布し、50〜150℃のオーブン内で有機溶剤を乾燥させた後、酸素の存在する環境下、例えば空気中500〜800℃の炉中で10〜50分間焼成し、冷却を経て、透明導電膜を形成した基板を得ることができる。   The transparent conductive film is produced by, for example, applying the transparent conductive film forming treatment agent on a glass substrate made of soda lime glass, quartz glass, or non-alkali glass by a method such as spraying, dipping, roll coating, or spin coating. Then, after drying the organic solvent in an oven at 50 to 150 ° C., it is baked for 10 to 50 minutes in an oxygen-existing environment, for example, in a furnace at 500 to 800 ° C. in air, and after cooling, the transparent conductive film Can be obtained.

実施例1〜7
80℃に温度調節されたウォーターバスにプロペラ攪拌機、撹拌容器を設置し、表1に示された配合量に従って、アセチルアセトンとカルビトール或いはエステルを混合した後、この混合溶剤にインジウム化合物、錫化合物を添加し、溶解させた。この溶液に実施例1〜3,7は増粘剤として、高分子量のニトロセルロース(RS−120ダイセル化学工業社製:Mw10,500〜126,500)、実施例4〜6は増粘剤として、低分子量のニトロセルロース(SS−20ダイセル化学工業社製:Mw66,000〜76,000)を溶解した。その後室温まで自然冷却して各処理剤を作製した。
Examples 1-7
Install a propeller stirrer and a stirring vessel in a water bath whose temperature is adjusted to 80 ° C., mix acetylacetone with carbitol or ester according to the blending amount shown in Table 1, and then add indium compound and tin compound to this mixed solvent. Added and dissolved. In this solution, Examples 1 to 3 and 7 were used as thickeners, high molecular weight nitrocellulose (RS-120 manufactured by Daicel Chemical Industries, Ltd .: Mw 10,500 to 126,500), and Examples 4 to 6 were used as thickeners. , Low molecular weight nitrocellulose (SS-20 manufactured by Daicel Chemical Industries, Ltd .: Mw 66,000-76,000) was dissolved. Then, each treatment agent was produced by naturally cooling to room temperature.

Figure 2005108728
Figure 2005108728

これらの処理剤を用いて、厚み3.0mmのソーダライムガラス板上にスピンコート法(1000rpm×10s+2000rpm×20s)により塗布し、塗布後のガラス板を100℃で10分間乾燥した後、600℃のベルト炉で約10分間焼成して透明導電膜付きガラスを作製した。得られた透明導電膜付きガラスにつき1〜3の評価を実施した。   Using these treatment agents, a soda lime glass plate having a thickness of 3.0 mm was applied by spin coating (1000 rpm × 10 s + 2000 rpm × 20 s), and the coated glass plate was dried at 100 ° C. for 10 minutes, and then 600 ° C. The glass with a transparent conductive film was produced by baking for about 10 minutes in a belt furnace. 1-3 evaluation was implemented about the obtained glass with a transparent conductive film.

1.電気特性
ロレスタFP(三菱化学社製)を用いて、四探針法により透明導電膜付きガラスの電気特性を測定した。
1. Electrical characteristics Using Loresta FP (manufactured by Mitsubishi Chemical Corporation), electrical characteristics of the glass with a transparent conductive film were measured by a four-point probe method.

2.膜厚
触針式膜厚計を用いて、透明導電膜の膜厚を測定した。
2. Film thickness The film thickness of the transparent conductive film was measured using a stylus-type film thickness meter.

3.光学特性
透明導電膜付きガラスの透明性を判定するために濁度計(日本電色社製)、分光光度計(UV3100島津製作所社製)を用いて、Hz率、透過率を測定した。
3. Optical characteristics To determine the transparency of the glass with a transparent conductive film, the Hz rate and transmittance were measured using a turbidimeter (manufactured by Nippon Denshoku) and a spectrophotometer (manufactured by Shimadzu UV3100).

表1より、得られた透明導電膜はニトロセルロースの分子量に依らずヘーズ率が0.5%未満であり、高透過率を示した。また10-3Ωcmオーダーの低い体積抵抗率を示すことも判明した。 From Table 1, the obtained transparent conductive film had a haze ratio of less than 0.5% regardless of the molecular weight of nitrocellulose, and exhibited a high transmittance. It was also found that the volume resistivity was as low as 10 −3 Ωcm.

比較例1,2
80℃に温度調節されたウォーターバスにプロペラ攪拌機、撹拌容器を設置し、表2に示された配合量に従って有機溶剤を準備し、この有機溶剤にインジウム化合物、錫化合物を添加し、溶解させた。この溶液に増粘剤として、比較例1はエチルセルロース、比較例2はアクリル系樹脂を使用し、溶解させた。その後室温まで自然冷却して各処理剤を作製した。
Comparative Examples 1 and 2
A propeller stirrer and a stirring vessel were installed in a water bath whose temperature was adjusted to 80 ° C., an organic solvent was prepared according to the blending amount shown in Table 2, and an indium compound and a tin compound were added to the organic solvent and dissolved. . In this solution, as a thickener, Comparative Example 1 was dissolved using ethyl cellulose, and Comparative Example 2 was an acrylic resin. Then, each treatment agent was produced by naturally cooling to room temperature.

Figure 2005108728
Figure 2005108728

これらの処理剤を用いて厚み3.0mmのソーダライムガラス板上にスピンコート法(1000rpm×10s+2000rpm×20s)により塗布し、塗布後のガラス板を100℃で10分間乾燥した後、600℃のベルト炉で約10分間焼成して透明導電膜付きガラスを作製した。得られた透明導電膜付きガラスにつき1〜3の評価を実施した。   Using these treatment agents, a soda lime glass plate having a thickness of 3.0 mm was applied by spin coating (1000 rpm × 10 s + 2000 rpm × 20 s), and the coated glass plate was dried at 100 ° C. for 10 minutes, and then at 600 ° C. The glass with a transparent conductive film was produced by baking for about 10 minutes in a belt furnace. 1-3 evaluation was implemented about the obtained glass with a transparent conductive film.

比較例1より、エチルセルロースを用いるとヘーズ率が低く高透過率を示すが、ニトロセルロースを使用したインキに比べて体積抵抗率が劣る。また比較例2より、アクリル系樹脂を用いるとニトロセルロースを用いたインキに比べて体積抵抗率が悪く、またヘーズ率が高いことが判る。   From Comparative Example 1, when ethyl cellulose is used, the haze ratio is low and the transmittance is high, but the volume resistivity is inferior to the ink using nitrocellulose. Further, it can be seen from Comparative Example 2 that when an acrylic resin is used, the volume resistivity is worse and the haze ratio is higher than that of the ink using nitrocellulose.

本発明にかかる透明導電膜形成用処理剤および透明導電膜形成方法は、液晶ディスプレイ、タッチパネル、太陽電池や、建築物、車両等のガラスの防曇防止用発熱体などに適用される。
The treatment agent for forming a transparent conductive film and the method for forming a transparent conductive film according to the present invention are applied to a liquid crystal display, a touch panel, a solar battery, a heating element for preventing defogging of glass such as buildings and vehicles, and the like.

Claims (5)

(1)インジウム化合物、(2)錫化合物、(3)増粘剤、そして(4)有機溶剤を含有する透明導電膜形成用処理剤において、(3)増粘剤がニトロセルロースであって、(4)有機溶剤がアセチルアセトンとカルビトール及び/又はエステルの混合溶剤であることを特徴とする透明導電膜形成用処理剤。   (1) Indium compound, (2) Tin compound, (3) Thickener, and (4) Transparent conductive film forming treatment agent containing organic solvent, (3) Thickener is nitrocellulose, (4) The processing agent for forming a transparent conductive film, wherein the organic solvent is a mixed solvent of acetylacetone and carbitol and / or ester. カルビトールがエチルカルビトールである請求項1記載の透明導電膜形成用処理剤。   The treatment agent for forming a transparent conductive film according to claim 1, wherein the carbitol is ethyl carbitol. エステルが酢酸エステル及び/又は乳酸エステルである請求項1又は2記載の透明導電膜形成用処理剤。   The treatment agent for forming a transparent conductive film according to claim 1 or 2, wherein the ester is an acetate ester and / or a lactic acid ester. エステルが乳酸ブチルである請求項1〜3のいずれかに記載の透明導電膜形成用処理剤。   The treatment agent for forming a transparent conductive film according to claim 1, wherein the ester is butyl lactate. 基板に請求項1〜4のいずれかに記載の透明導電膜形成用処理剤を塗布、乾燥の後、焼成することを特徴とした透明導電膜形成方法。
The transparent conductive film formation method characterized by apply | coating the processing agent for transparent conductive film formation in any one of Claims 1-4 to a board | substrate, baking after drying.
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