JP2005101662A - Light emitting diode lamp - Google Patents

Light emitting diode lamp Download PDF

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JP2005101662A
JP2005101662A JP2004373135A JP2004373135A JP2005101662A JP 2005101662 A JP2005101662 A JP 2005101662A JP 2004373135 A JP2004373135 A JP 2004373135A JP 2004373135 A JP2004373135 A JP 2004373135A JP 2005101662 A JP2005101662 A JP 2005101662A
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emitting diode
light emitting
light
electrode
electrodes
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Houki Michimori
方紀 道盛
Eiji Sasano
英二 笹野
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Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
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Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting diode lamp that can efficiently emit light. <P>SOLUTION: The light emitting diode lamp is provided with a light emitting diode having an anode and a cathode on one surface, two leads respectively connected to the anode and cathode, and a light-transmissive resin covering the diode. One of the leads is formed to have a cup-like portion composed of a placing section and a reflecting section, and an insulating base having a conductive pattern on its surface is fixed on the placing section. The light emitting diode is placed on the placing section so that electrodes of the diode are directed downward, and the reflecting section surrounds the light emitting diode. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は発光ダイオードランプに関する。     The present invention relates to a light emitting diode lamp.

従来、複数の発光ダイオードを用いた発光ダイオードランプが例えば特許文献１にて、図７の断面図と図８の平面図の様に示されている。これらの図に於て、キャン７１の載置面上に２個の絶縁台７２が載置され、その上に導電性接着剤を介してそれぞれ青色発光ダイオード７３が載置されている。赤色発光ダイオード７４と緑色発光ダイオード７５がキャン７１上に載置されている。各絶縁台７２と各発光ダイオード７３、７４、７５とキャン７１と端子７６乃至８０に於て配線が施こされている。
特開平４−１３７５６９号公報 Conventionally, a light emitting diode lamp using a plurality of light emitting diodes is shown, for example, in Patent Document 1 as shown in a sectional view of FIG. 7 and a plan view of FIG. In these drawings, two insulating bases 72 are placed on the placement surface of a can 71, and blue light emitting diodes 73 are placed thereon via a conductive adhesive. A red light emitting diode 74 and a green light emitting diode 75 are placed on the can 71. Wiring is provided at each insulating stand 72, each light emitting diode 73, 74, 75, can 71 and terminals 76 to 80.
Japanese Patent Laid-Open No. 4-137569

しかして上述のランプでは、各発光ダイオード７３、７４、７５の発光接合面の高さを同一にするために、２個の絶縁台７２が設けられているが、２個を別々に固定するので作業時間がかかる。また青色発光ダイオード７３を絶縁台７２上に固定するのに、手作業で行っているので作業時間がかかると共に、青色発光ダイオード７３が位置ずれし易い課題がある。また上述のランプに於て白色光を得るために３原色混合方式により、赤色及び緑色及び青色発光ダイオードを合計３個以上必要とする。故に発光ダイオードの数が多く、端子も配線の数も多いのでコスト高になると共に消費電力が大きいという課題がある。 また、サファイヤ基板を用いる青色発光ダイオードのように、一方の面に陽極と陰極の電極を有する発光ダイオードを使用し、その電極を上面に配置した場合に、電極によって遮光が発生するという課題がある。   Thus, in the above-described lamp, two insulating bases 72 are provided in order to make the heights of the light emitting junction surfaces of the respective light emitting diodes 73, 74, 75 the same, but the two are fixed separately. It takes time. In addition, fixing the blue light-emitting diode 73 on the insulating base 72 is performed manually, so that it takes time to work, and the blue light-emitting diode 73 is liable to be displaced. Further, in order to obtain white light in the above-mentioned lamp, a total of three or more red, green, and blue light emitting diodes are required by the three primary color mixing method. Therefore, the number of light-emitting diodes is large, and the number of terminals and wirings is large. Therefore, there is a problem that the cost is high and the power consumption is large. In addition, when a light-emitting diode having an anode and a cathode electrode on one surface is used, such as a blue light-emitting diode using a sapphire substrate, and the electrodes are arranged on the upper surface, there is a problem that light is blocked by the electrode. .

本発明の発光ダイオードランプは、請求項１に記載の様に、一方の面に陽極電極と陰極電極を有する発光ダイオードと、前記陽極電極と陰極電極にそれぞれ接続される２つのリードと、前記発光ダイオードを覆う透光性樹脂とを備えた発光ダイオードランプにおいて、前記２つのリードの一方を、載置部と反射部からなるカップ状部分を有するリードとし、前記載置部の上に、表面に導電パターンを有する絶縁台を固定し、前記発光ダイオードをその両電極が下側を向く様にして前記載置台に載置し、前記反射部が前記発光ダイオードの周囲を囲むことを特徴とする。   The light-emitting diode lamp of the present invention includes a light-emitting diode having an anode electrode and a cathode electrode on one surface, two leads connected to the anode electrode and the cathode electrode, and the light-emitting diode. In a light-emitting diode lamp comprising a translucent resin that covers a diode, one of the two leads is a lead having a cup-shaped portion composed of a placement portion and a reflection portion, and is placed on the surface above the placement portion. An insulating base having a conductive pattern is fixed, the light emitting diode is placed on the mounting base such that both electrodes thereof face downward, and the reflecting portion surrounds the light emitting diode.

本発明の発光ダイオードランプは、請求項２に記載の様に、前記絶縁台は前記発光ダイオードよりも広い面積とし、前記載置部は前記絶縁台よりも広い面積としたことを特徴とする。   The light-emitting diode lamp of the present invention is characterized in that, as described in claim 2, the insulating table has a larger area than the light-emitting diode, and the mounting portion has a larger area than the insulating table.

上記の構成によれば、一方の面に両電極を有する発光ダイオードを２つのリードに接続するに当たり、一方のリードに形成したカップ形状部に絶縁台を介在して配置することができるので、２つのリードにまたがって発光ダイオードを配置する場合に比べて、組立作業性を良好にすることができる。また、発光ダイオードの両電極が下側を向くので、上側を向く場合に比べて、電極やそれに接続する配線による遮光を防止し、載置部と反射部からなるカップ状部分による反射効果も加わって、光り取り出し効率を高めることができる。   According to the above configuration, when connecting a light emitting diode having both electrodes on one surface to two leads, the cup-shaped portion formed on one lead can be disposed with an insulating base interposed therebetween. As compared with the case where the light emitting diode is arranged across two leads, the assembling workability can be improved. In addition, since both electrodes of the light-emitting diode face downward, the light shielding by the electrode and the wiring connected to it is prevented, and the reflection effect by the cup-shaped part consisting of the mounting part and the reflective part is also added compared to the case where it faces upward. Thus, the light extraction efficiency can be increased.

本発明によれば、表面に電極パターンを有する絶縁台の上に発光ダイオードをその両電極が下を向く様にしてフリップ配置することによって光り取り出し効率を高めることができる。   According to the present invention, the light extraction efficiency can be increased by flip-lighting a light emitting diode on an insulating table having an electrode pattern on the surface so that both electrodes face downward.

以下に発光ダイオードランプの１実施例を図１と図２に従い説明する。図１は本実施例に係る発光ダイオードランプの断面図であり、図２はそのランプの平面図である。これらの図に於て、リード１（第１のリード）は鉄板等の金属板からなり、端部２と載置部３と反射部４からできている。端部２と載置部３によってリード１の先端にカップ形状が形成されることになる。   An embodiment of a light emitting diode lamp will be described below with reference to FIGS. FIG. 1 is a sectional view of a light-emitting diode lamp according to the present embodiment, and FIG. 2 is a plan view of the lamp. In these drawings, the lead 1 (first lead) is made of a metal plate such as an iron plate, and is composed of an end portion 2, a placement portion 3, and a reflection portion 4. A cup shape is formed at the tip of the lead 1 by the end portion 2 and the placement portion 3.

絶縁台５は例えば１０11cm-3程度の低濃度不純物を含むシリコンからなり、平面から見れば長方形であり、側面から見れば階段状に高さが異なる様に形成されている。絶縁台５の表面には導電パターン６、７が形成され、電気的に分離している。導電パターン６、７には各々、切欠き８、９があり、部分的に電極が除かれている。これは自動機により発光ダイオードを絶縁台５上に載置する時に、載置場所を認識し易くすると共に、正確な載置位置を確保するためである。絶縁台５はリード１の載置部３の上に導電性接着剤１０を介して載置されている。 The insulating stand 5 is made of silicon containing a low concentration impurity of, for example, about 10 11 cm −3 , is rectangular when viewed from the plane, and has a stepped height when viewed from the side. Conductive patterns 6 and 7 are formed on the surface of the insulating table 5 and are electrically separated. The conductive patterns 6 and 7 have notches 8 and 9, respectively, and the electrodes are partially removed. This is because when the light emitting diode is mounted on the insulating table 5 by an automatic machine, it is easy to recognize the mounting location and to ensure an accurate mounting position. The insulating stand 5 is placed on the placement portion 3 of the lead 1 via a conductive adhesive 10.

青色発光ダイオード１１は窒素を添加された炭化硅素（ＳｉＣ）からなるＮ型基板１２（層厚約１００μm）上に、窒素とアルミニウムを添加された炭化硅素からなるＮ型エピタキシャル層１３（層厚約９μm）及びアルミニウムを添加された炭化硅素からなるＰ型エピタキシャル層１４（層厚約５μm）が形成され、表面電極１５と裏面電極１６が形成されたものである。   The blue light-emitting diode 11 is formed on an N-type substrate 12 (layer thickness: about 100 μm) made of silicon carbide (SiC) doped with nitrogen and an N-type epitaxial layer 13 (layer thickness: about 100 μm) doped with nitrogen and aluminum. 9 μm) and a P-type epitaxial layer 14 (layer thickness of about 5 μm) made of silicon carbide to which aluminum is added, and a front electrode 15 and a back electrode 16 are formed.

上述の様にＮ型エピタキシャル層１３とＰ型エピタキシャル層１４により形成される発光接合面は裏面電極１６に近い側に設けられている。これは発光接合面と表面電極１５との距離を遠ざけることにより、放出光が表面電極１５に遮ぎられることを少なくし、光取出効率を向上させるためである。青色発光ダイオード１１は絶縁台５の導電パターン６上に半田１７を介して載置されている。   As described above, the light-emitting junction surface formed by the N-type epitaxial layer 13 and the P-type epitaxial layer 14 is provided on the side close to the back electrode 16. This is to increase the light extraction efficiency by reducing the distance between the light emitting junction surface and the surface electrode 15 so that the emitted light is not blocked by the surface electrode 15. The blue light emitting diode 11 is placed on the conductive pattern 6 of the insulating table 5 via the solder 17.

黄色発光ダイオード１８は燐化ガリウム（ＧａＰ）からなるＮ型基板１９（層厚約２８０μm）上に、テルルが添加されたＧａＡｓXＰ1-X（ｘはＮ型基板１９から遠ざかるに従い、徐々に０から０．１５に変化する）からなるＮ型勾配層２０（層厚約３０μm）及びテルルが添加されたＧａＡｓ0.15Ｐ0.85からなるＮ型エピタキシャル層２１（層厚約１５μm）及び窒素とテルルが添加されたＧａＡｓ0.15Ｐ0.85からなるＮ型エピタキシャル層２２（層厚約１５μm）及び亜鉛が添加されたＧａＡｓ0.15Ｐ0.85からなるＰ型エピタキシャル層２３（層厚約５μm）が形成され、表面電極２４と裏面電極２５が形成されたものである。 The yellow light-emitting diode 18 is formed on a N-type substrate 19 (layer thickness of about 280 μm) made of gallium phosphide (GaP), and tellurium is added to GaAs X P 1-X (x is gradually away from the N-type substrate 19). N-type gradient layer 20 (having a thickness of about 30 μm) composed of 0 to 0.15), N-type epitaxial layer 21 (layer thickness of about 15 μm) composed of GaAs 0.15 P 0.85 doped with tellurium, and nitrogen and tellurium. consisting GaAs 0.15 P 0.85, which is added N-type epitaxial layer 22 P-type epitaxial layer 23 made of GaAs 0.15 P 0.85 to (layer thickness about 15 [mu] m) and zinc was added (layer thickness about 5 [mu] m) is formed, the surface electrode 24 And the back electrode 25 is formed.

そして黄色発光ダイオード１８のＮ型エピタキシャル層２２とＰ型エピタキシャル層２３により形成された発光接合面と青色発光ダイオード１１の発光接合面の高さが略同じになる様に、絶縁台５の段差の大きさが決められている。   The step of the insulating base 5 is set so that the height of the light emitting junction surface formed by the N type epitaxial layer 22 and the P type epitaxial layer 23 of the yellow light emitting diode 18 and the light emitting junction surface of the blue light emitting diode 11 are substantially the same. The size is decided.

他のリード２６（第２のリード）と２７（第３のリード）は鉄板等の金属板からなり、リード１の反射部４の外側に位置して設けられている。金属細線２８、２９、３０、３１はそれぞれ他のリード２６と青色発光ダイオード１１との間、及びリード１と導電パターン６との間、及びパターン電極６と黄色発光ダイオード１８との間、及び導電パターン７と他のリード２７との間に施こされている。透光性樹脂３２は例えば光拡散剤が混入されたエポキシ樹脂からなり、少なくとも青色及び黄色発光ダイオード１１と１８を覆う様に形成されている。これらの部品により本実施例の発光ダイオードランプ３３が構成されている。   The other leads 26 (second lead) and 27 (third lead) are made of a metal plate such as an iron plate and are provided outside the reflecting portion 4 of the lead 1. The thin metal wires 28, 29, 30, 31 are respectively connected between the other lead 26 and the blue light emitting diode 11, between the lead 1 and the conductive pattern 6, and between the pattern electrode 6 and the yellow light emitting diode 18, and conductive. It is applied between the pattern 7 and another lead 27. The translucent resin 32 is made of, for example, an epoxy resin mixed with a light diffusing agent, and is formed so as to cover at least the blue and yellow light emitting diodes 11 and 18. The light emitting diode lamp 33 of the present embodiment is constituted by these components.

上述の様に青色及び黄色発光ダイオード１１、１８はアノードコモンにしているので、リード１には陽極電圧が、他のリード２６と２７には陰極電圧が印加される。   As described above, since the blue and yellow light emitting diodes 11 and 18 are common to the anode, an anode voltage is applied to the lead 1 and a cathode voltage is applied to the other leads 26 and 27.

次に本実施例の発光ダイオードランプによる発光色を図６の色度図に従って説明する。横軸と縦軸はそれぞれＣＩＥ（国際照明委員会）１９３１色度図に於けるｘ座標とｙ座標である。青色発光ダイオード１１を単独に点灯させた時の発光色を視感色彩計により実測したものが、この図に於てａで示されている。黄色発光ダイオード１８を単独に点灯させた時の発光色を実測したものがｂで示されている。そして両発光ダイオード１１、１８を同時に点灯した時の発光色がｃで示されており、そのｘ座標は０．３、ｙ座標は０．３１である。上述のＣＩＥ１９３１色度図に於て、ｄで示された範囲内（中心値のｘ座標は０．３３、ｙ座標は０．３３）が白色とされている。故に実測値ｃは白色の範囲内である。   Next, the color emitted by the light emitting diode lamp of this embodiment will be described with reference to the chromaticity diagram of FIG. The horizontal axis and the vertical axis are the x coordinate and y coordinate in the CIE (International Commission on Illumination) 1931 chromaticity diagram, respectively. In this figure, a is a light emission color measured when the blue light-emitting diode 11 is lit alone, measured with a visual colorimeter. An actually measured emission color when the yellow light emitting diode 18 is lit alone is indicated by b. The light emission color when both the light emitting diodes 11 and 18 are turned on simultaneously is indicated by c, and the x coordinate is 0.3 and the y coordinate is 0.31. In the above CIE1931 chromaticity diagram, the range indicated by d (x coordinate of the center value is 0.33, y coordinate is 0.33) is white. Therefore, the actual measurement value c is in the white range.

更に、各発光ダイオードの材質が第１実施例と異なる発光ダイオードランプの第２実施例（本発明の実施例）を図３と図４に従い説明する。図３は本実施例の発光ダイオードランプの断面図であり、図４はその平面図である。これらの図に於て、絶縁台３４は例えば低濃度不純物を含むシリコンからなり、階段状に高さが異なり、その表面には導電パターン３５、３６が形成され、電気的に分離している。導電パターン３５には切欠き３７が、導電パターン３６には切欠き３８、３９が形成され、自動機が認識し易い様にされている。絶縁台３４は載置部３上に導電性接着剤１０を介して載置されている。導電性接着剤１０を介してリード１の載置部３の上に載置されているので、絶縁台５の裏面をリード１と同電位に保持することができる。したがって、絶縁台５の表面等を伝わって流れるリーク電流等を、リード１に導くこともできる。   Further, a second embodiment of the light emitting diode lamp (an embodiment of the present invention) in which the material of each light emitting diode is different from that of the first embodiment will be described with reference to FIGS. FIG. 3 is a cross-sectional view of the light-emitting diode lamp of this embodiment, and FIG. 4 is a plan view thereof. In these drawings, the insulating base 34 is made of, for example, silicon containing low-concentration impurities, and has different heights in a stepped manner. Conductive patterns 35 and 36 are formed on the surface thereof, and are electrically separated. A cutout 37 is formed in the conductive pattern 35 and cutouts 38 and 39 are formed in the conductive pattern 36 so that the automatic machine can easily recognize them. The insulating table 34 is placed on the placement unit 3 via the conductive adhesive 10. Since it is mounted on the mounting portion 3 of the lead 1 via the conductive adhesive 10, the back surface of the insulating table 5 can be held at the same potential as the lead 1. Therefore, a leak current or the like flowing along the surface of the insulating table 5 can be guided to the lead 1.

青色発光ダイオード４０はサファイア基板４１上に、窒化アルミニウムからなるバッファー層４２及びＮ+型窒化ガリウム層４３及びＮ型窒化ガリウム層４４及び低濃度の不純物が添加された窒化ガリウム層４５からなり、その窒化ガリウム層４５と接触する陽極電極４６及びＮ+型窒化ガリウム層４３と接触する陰極電極４７からできている。この陽極電極４６及び陰極電極４７はそれぞれ絶縁基台３４の導電パターン３５と３６上に導電性接着剤を介して載置されている。   The blue light emitting diode 40 includes a buffer layer 42 made of aluminum nitride, an N + type gallium nitride layer 43, an N type gallium nitride layer 44, and a gallium nitride layer 45 doped with low-concentration impurities on a sapphire substrate 41. It consists of an anode electrode 46 in contact with the gallium nitride layer 45 and a cathode electrode 47 in contact with the N + -type gallium nitride layer 43. The anode electrode 46 and the cathode electrode 47 are respectively placed on the conductive patterns 35 and 36 of the insulating base 34 via a conductive adhesive.

黄色発光ダイオード４８はＮ型砒化ガリウム基板４９上に、シリコンが添加されたＮ型ＩｎＧａＡｌＰからなるＮ型クラッド層５０及びＩｎＧａＡｌＰからなる活性層５１及び低濃度の亜鉛が添加されたＰ型ＩｎＧａＡｌＰからなるＰ型クラッド層５２及び高濃度の亜鉛が添加されたＰ型ＧａＡｌＡｓからなるＰ電流拡散層５３と表面電極５４と裏面電極５５から構成されている。   The yellow light emitting diode 48 is made of an N-type cladding layer 50 made of N-type InGaAlP added with silicon, an active layer 51 made of InGaAlP, and a P-type InGaAlP added with low-concentration zinc on an N-type gallium arsenide substrate 49. It comprises a P-type cladding layer 52, a P-current diffusion layer 53 made of P-type GaAlAs added with high-concentration zinc, a front electrode 54, and a back electrode 55.

そして上述の青色発光ダイオード４０のＮ型窒化ガリウム層４４と窒化ガリウム層４５により形成された発光接合面が黄色発光ダイオード４８の活性層５１と略同一の高さになる様に、絶縁台３４の段差の大きさが決められている。金属細線５６、５７、５８が配線されている。これらの図と図１及び図２に於て、同一番号のものは同一であることを示す。   The insulating base 34 is formed so that the light emitting junction surface formed by the N-type gallium nitride layer 44 and the gallium nitride layer 45 of the blue light emitting diode 40 is substantially the same as the active layer 51 of the yellow light emitting diode 48. The size of the step is determined. Metal thin wires 56, 57, and 58 are wired. In these drawings and FIGS. 1 and 2, the same reference numerals indicate the same thing.

次に本実施例の発光ダイオードランプによる発光色を図６にて説明する。青色発光ダイオード４０と黄色発光ダイオード４８を単独に点灯させた時の発光色を実測したものが、それぞれｅとｆで示されている。そしてこれらを同時に点灯した時の発光色はｄで示された白色の範囲内にある。   Next, the color of light emitted from the light emitting diode lamp of this embodiment will be described with reference to FIG. E and f indicate the measured emission colors when the blue light emitting diode 40 and the yellow light emitting diode 48 are individually turned on. The light emission color when these are simultaneously turned on is in the white range indicated by d.

更に青色発光ダイオードの材質が第１実施例と異なる発光ダイオードランプの第３実施例を図５の断面図にて説明する。この図に於て、絶縁台５９は例えば低濃度不純物を含むシリコンからなり、階段状に高さが異なり、その表面には導電パターン６０が連続して形成されている。絶縁台５９は載置部３上に導電性接着剤１０を介して載置されている。   Further, a third embodiment of the light emitting diode lamp, which is different from the first embodiment in the material of the blue light emitting diode, will be described with reference to the sectional view of FIG. In this figure, an insulating table 59 is made of silicon containing low-concentration impurities, for example, has a stepped height, and a conductive pattern 60 is continuously formed on the surface thereof. The insulating table 59 is mounted on the mounting unit 3 via the conductive adhesive 10.

青色発光ダイオード６１は層厚約２５０μmのＮ型セレン亜鉛（ＺｎＳｅ）からなる基板６２及び塩素が添加されたＮ型セレン化亜鉛からなるＮ型エピタキシャル層６３（層厚約５μm）及びリチウＭが添加されたＰ型セレン化亜鉛からなるＰ型エピタキシャル層６４（層厚約１μm）及び表面電極６５及び裏面電極６６から構成されている。青色発光ダイオード６１は載置部３上に導電性接着剤を介して載置されている。   The blue light-emitting diode 61 includes a substrate 62 made of N-type zinc selenide (ZnSe) having a layer thickness of about 250 μm, an N-type epitaxial layer 63 (layer thickness of about 5 μm) made of chlorine-added N-type zinc selenide, and lithium M. The P-type epitaxial layer 64 (layer thickness is about 1 μm) made of the prepared P-type zinc selenide, the front surface electrode 65 and the back surface electrode 66. The blue light emitting diode 61 is mounted on the mounting portion 3 via a conductive adhesive.

第１実施例と同一材質からなる黄色発光ダイオード１８は載置部３上に導電性接着剤を介して載置されている。この図と図１及び図２に於て、同一番号のものは同一であることを示す。そして上述の青色発光ダイオード６１の発光接合面が黄色発光ダイオード１８の発光接合面と略同一の高さになる様に、絶縁台５９の段差の大きさが決められている。また両発光ダイオードはカソードコモンに配線されている。   The yellow light-emitting diode 18 made of the same material as that of the first embodiment is placed on the placement portion 3 via a conductive adhesive. In FIG. 1 and FIG. 1 and FIG. 2, the same number indicates the same thing. The step size of the insulating base 59 is determined so that the light emitting junction surface of the blue light emitting diode 61 is substantially the same height as the light emitting junction surface of the yellow light emitting diode 18. Both light emitting diodes are wired to the cathode common.

次にこの発光ダイオードランプの発光色を図６により説明する。青色発光ダイオード６１と黄色発光ダイオード１８を単独に点灯させた時の発光色を実測したものが、それぞれｇとｂで示されている。これらを同時に点灯した時の発光色はｄで示された白色の範囲内にある。   Next, the emission color of the light emitting diode lamp will be described with reference to FIG. Measured colors of light emitted when the blue light-emitting diode 61 and the yellow light-emitting diode 18 are individually turned on are indicated by g and b, respectively. When these are simultaneously turned on, the emission color is in the white range indicated by d.

上述の様に、１つの絶縁台の導電パターン上に複数の発光ダイオードを載置するので、従来の様に各々の絶縁台を固定する方式と比べて作業時間が早くなる。更に導電パターンに切欠きを設けることにより、自動機により載置場所を認識し易くなり、正確な位置に発光ダイオードを載置できる。   As described above, since a plurality of light emitting diodes are mounted on the conductive pattern of one insulating table, the working time is faster than the conventional method of fixing each insulating table. Further, by providing a notch in the conductive pattern, it becomes easy to recognize the placement location by an automatic machine, and the light emitting diode can be placed at an accurate position.

また、各発光ダイオードが載置される絶縁台の高さを階段状に変えることにより、発光色の異なる複数の発光ダイオードの発光接合面を略同一の高さに設けることができる。故に各発光ダイオードから放出される光は発光源の近くで混ざり合うので、互いの光が良く混ざり合うことができる。   Further, by changing the height of the insulating base on which each light emitting diode is mounted in a stepped manner, the light emitting junction surfaces of a plurality of light emitting diodes having different emission colors can be provided at substantially the same height. Therefore, since the light emitted from each light emitting diode is mixed near the light emitting source, the light of each other can be mixed well.

更に望ましくは、炭化硅素又はセレン化亜鉛又は窒化ガリウムからなる青色発光ダイオードと、燐化ガリウム砒素又は燐化ガリウムアルミニウムインジウムからなる黄色発光ダイオードを設け両方を点灯することにより、青色光と黄色光が混合され白色光が得られる。故に３原色混合方式に比べて発光ダイオードの数と端子数と配線数が減りコスト安になり、消費電力も従来より少ない。   More preferably, a blue light emitting diode made of silicon carbide, zinc selenide or gallium nitride and a yellow light emitting diode made of gallium arsenide phosphide or gallium aluminum indium phosphide are provided and both are turned on, so that blue light and yellow light are emitted. Mixed to obtain white light. Therefore, the number of light emitting diodes, the number of terminals, and the number of wirings are reduced as compared with the three primary color mixing method, and the cost is reduced.

ところで、上述した第2の実施例には、以下の点も実質的に記載されている。   By the way, the following points are substantially described in the second embodiment described above.

絶縁台３４は、低濃度不純物を含むシリコンからなるので、導電パターン形成や加工性に優れ、その取り扱いが容易になる点。発光ダイオード４０は一方の面に陽極電極４６と陰極電極４７の両電極を有した窒化ガリウム系の発光ダイオードによってできている。発光ダイオード４０は、陽極電極４６と陰極電極４７の両電極が下側を向く様にして絶縁基台３４上に配置されている。陽極電極４６と陰極電極４７の両電極が下側を向くので、上に出る光がこれらの電極による遮光されることを防止することができる。陽極電極４６と陰極電極４７の種類を選択することによって、これらを反射電極として利用可能な構造とすることができる。   Since the insulating table 34 is made of silicon containing low-concentration impurities, it has excellent conductive pattern formation and workability, and is easy to handle. The light emitting diode 40 is made of a gallium nitride based light emitting diode having an anode electrode 46 and a cathode electrode 47 on one surface. The light emitting diode 40 is disposed on the insulating base 34 such that both the anode electrode 46 and the cathode electrode 47 face downward. Since both the anode electrode 46 and the cathode electrode 47 face downward, it is possible to prevent light emitted upward from being blocked by these electrodes. By selecting the kind of the anode electrode 46 and the cathode electrode 47, it is possible to make the structure usable as a reflection electrode.

図４に示されるように、絶縁基台３４の面積が発光ダイオード４０の面積よりも広いので、発光ダイオード４０に近い絶縁基台３４やその上の導電パターン３５，３６を発光ダイオード４０の光反射に利用可能な構造とすることができる。また、載置部３の面積が絶縁基台３４の面積よりも広いので、載置部３を発光ダイオード４０の光反射に利用可能な構造とすることができる。さらに、発光ダイオード４０（４８）は、その周囲が反射部４によって囲まれるので、その光取り出し効率をより高める構造とすることができる。   As shown in FIG. 4, since the area of the insulating base 34 is larger than the area of the light emitting diode 40, the insulating base 34 close to the light emitting diode 40 and the conductive patterns 35 and 36 thereon are reflected by the light from the light emitting diode 40. It can be set as the structure which can be utilized for. Further, since the area of the mounting portion 3 is larger than the area of the insulating base 34, the mounting portion 3 can be configured to be used for light reflection of the light emitting diode 40. Further, since the periphery of the light emitting diode 40 (48) is surrounded by the reflecting portion 4, the light extraction efficiency can be further increased.

したがって、上記実施例には以下の点が記載されている。   Therefore, the following points are described in the above embodiment.

複数の色を混色して白色光を得るようにした発光ダイオードランプの点。青色発光ダイオードと黄色発光ダイオードが発する青色光と黄色光を混色して白色光を得るようにする点。青色発光ダイオードは、一方の面に陽極と陰極の両方の電極を有し、前記両電極が前記青色発光ダイオードの下側に位置する導電パターンと対面するように前記両電極を下に向けて配置した点。このような構成によれば、青色と黄色の２色で白色が得られるので、３原色混合式に比べて発光ダイオード数を削減することができる点。青色発光ダイオードは、その両電極が下側を向くので、上側に向いている場合に比べて、電極やそれに接続する配線による遮光を防止して光り取り出し効率を高めることができる点。   A point of a light-emitting diode lamp that mixes multiple colors to obtain white light. Blue light and yellow light emitted from blue and yellow light emitting diodes are mixed to obtain white light. The blue light emitting diode has both anode and cathode electrodes on one surface, and the electrodes are arranged facing downward so that the electrodes face the conductive pattern located on the lower side of the blue light emitting diode. Point. According to such a configuration, since white is obtained with two colors of blue and yellow, the number of light emitting diodes can be reduced as compared with the three primary color mixed type. The blue light-emitting diode has both electrodes facing downward, so that the light extraction efficiency can be improved by preventing light shielding by the electrodes and the wiring connected to the electrodes, compared to when facing upward.

先端に載置部と反射部からなるカップ状部分を有する第１のリードを有する点。反射部の外側に位置する第２のリードを有する点。一方の面に陽極と陰極の両方の電極を有して前記載置部に載置される発光ダイオードとを備える発光ダイオードランプ。表面に電極パターンを有する絶縁台の上に前記発光ダイオードをその両電極が下を向く様にして配置した点。前記絶縁台を前記載置部に配置し、前記発光ダイオードの電極と前記リードは、前記絶縁台上の導電パターンを介して接続されている点。このような構成によれば、一方の面に両電極を有する発光ダイオードを２つのリードに接続するに当たり、一方のリードに形成したカップ形状部に絶縁台を介在して配置することができるので、２つのリードにまたがって発光ダイオードを配置する場合に比べて、組立作業性を良好にすることができる点。また、発光ダイオードの両電極が下側を向くので、上側を向く場合に比べて、電極やそれに接続する配線による遮光を防止し、載置部と反射部からなるカップ状部分による反射効果も加わって、光り取り出し効率を高めることができる点。   The point which has the 1st lead | read | reed which has a cup-shaped part which consists of a mounting part and a reflection part in the front-end | tip. The point which has the 2nd lead located in the outer side of a reflection part. A light-emitting diode lamp comprising a light-emitting diode that has both an anode and a cathode on one surface and is placed on the mounting portion. The point that the light-emitting diode is arranged on an insulating table having an electrode pattern on the surface so that both electrodes face downward. The said insulating stand is arrange | positioned in the said mounting part, and the electrode of the said light emitting diode and the said lead are connected through the conductive pattern on the said insulating stand. According to such a configuration, when connecting a light emitting diode having both electrodes on one surface to two leads, the cup-shaped portion formed on one lead can be disposed with an insulating table interposed therebetween, The assembly workability can be improved as compared with the case where the light emitting diode is arranged across the two leads. In addition, since both electrodes of the light-emitting diode face downward, the light shielding by the electrode and the wiring connected to it is prevented, and the reflection effect by the cup-shaped part consisting of the mounting part and the reflective part is also added compared to the case where it faces upward. And can improve the light extraction efficiency.

一方の面に陽極電極と陰極電極を有する発光ダイオードの点。陽極電極と陰極電極にそれぞれ接続される２つのリードを有する点。前記発光ダイオードを覆う透光性樹脂とを備えた発光ダイオードランプの点。前記２つのリードの一方を、先端に載置部と反射部からなるカップ状部分を有するリードとする点。表面に導電パターンを有する絶縁台を前記載置部の上に固定する点。前記発光ダイオードをその両電極が下側を向く様にして前記載置台に載置する点。前記反射部が前記発光ダイオードの周囲を囲む点。このような構成によれば、一方の面に両電極を有する発光ダイオードを２つのリードに接続するに当たり、一方のリードに形成したカップ形状部に絶縁台を介在して配置することができるので、２つのリードにまたがって発光ダイオードを配置する場合に比べて、組立作業性を良好にすることができる点。発光ダイオードの両電極が下側を向くので、上側を向く場合に比べて、電極やそれに接続する配線による遮光を防止し、載置部と反射部からなるカップ状部分による反射効果も加わって、光り取り出し効率を高めることができる点。   A point of a light emitting diode having an anode electrode and a cathode electrode on one side. A point having two leads respectively connected to an anode electrode and a cathode electrode. A point of a light-emitting diode lamp comprising a translucent resin covering the light-emitting diode. One of the two leads is a lead having a cup-shaped portion including a placement portion and a reflection portion at the tip. The point which fixes the insulating stand which has a conductive pattern on the surface on the said mounting part. The light-emitting diode is mounted on the mounting table with both electrodes facing downward. The point where the reflection part surrounds the periphery of the light emitting diode. According to such a configuration, when connecting a light emitting diode having both electrodes on one surface to two leads, the cup-shaped portion formed on one lead can be disposed with an insulating table interposed therebetween, The assembly workability can be improved as compared with the case where the light emitting diode is arranged across the two leads. Since both electrodes of the light-emitting diode face downward, compared to when facing upward, light shielding by the electrode and the wiring connected to it is prevented, and the reflection effect by the cup-shaped part consisting of the placement part and the reflection part is also added, The point which can improve the light extraction efficiency.

一方の面に陽極電極と陰極電極を有する発光ダイオードの点、陽極電極と陰極電極にそれぞれ接続される２つのリードを有する点。前記発光ダイオードを覆う透光性樹脂とを備えた発光ダイオードランプの点。前記発光ダイオードをその電極が下側を向く様にして絶縁台上に配置した点。記絶縁台を前記リードの先端に形成した載置部上に配置した点。前記絶縁台は表面に導電パターンを有するとともに前記発光ダイオードよりも広い面積とした点。前記載置部は前記絶縁台よりも広い面積とした点。このような構成によれば、一方の面に両電極を有する発光ダイオードを２つのリードに接続するに当たり、一方のリードに形成したカップ形状部に絶縁台を介在して配置することができるので、２つのリードにまたがって発光ダイオードを配置する場合に比べて、組立作業性を良好にすることができる点。発光ダイオードの両電極が下側を向くので、上側を向く場合に比べて、電極やそれに接続する配線による遮光を防止し光り取り出し効率を高めることができる点。また、前記絶縁台は表面に導電パターンを有するとともに前記発光ダイオードよりも広い面積としたので、絶縁台やその表面の導電パターンに光反射機能を持たせることができる点。載置部は絶縁台よりも広い面積としたので、載置部にも光反射機能を持たせることができる点。   A point of a light emitting diode having an anode electrode and a cathode electrode on one surface, and a point having two leads connected to the anode electrode and the cathode electrode, respectively. A point of a light-emitting diode lamp comprising a translucent resin covering the light-emitting diode. The light-emitting diode is arranged on an insulating table with its electrodes facing downward. The point where the insulating stand is disposed on the mounting portion formed at the tip of the lead. The insulating base has a conductive pattern on the surface and a larger area than the light emitting diode. The mounting portion has a larger area than the insulating table. According to such a configuration, when connecting a light emitting diode having both electrodes on one surface to two leads, the cup-shaped portion formed on one lead can be disposed with an insulating table interposed therebetween, The assembly workability can be improved as compared with the case where the light emitting diode is arranged across the two leads. Since both electrodes of the light-emitting diode face downward, the light extraction efficiency can be improved by preventing light shielding by the electrodes and wiring connected to the electrodes, compared to when facing upward. In addition, since the insulating base has a conductive pattern on the surface and a larger area than the light emitting diode, the insulating base and the conductive pattern on the surface can have a light reflecting function. Since the mounting part has a larger area than the insulating table, the mounting part can also have a light reflecting function.

一方の面に陽極電極と陰極電極を有する発光ダイオードの点。陽極電極と陰極電極にそれぞれ接続される２つのリードを有する点。前記発光ダイオードを覆う透光性樹脂とを備えた発光ダイオードランプの点。表面に導電パターンを有する絶縁台上に前記発光ダイオードをその両電極が下を向く様にして配置した点。前記絶縁台を前記一方のリード上に導電性接着剤を介して載置した点。このような構成によれば、発光ダイオードの両電極が下側を向くので、上側を向く場合に比べて、電極やそれに接続する配線による遮光を防止し、光り取り出し効率を高めることができる点。絶縁台を一方のリード上に導電性接着剤を介して載置したので、絶縁台の裏面をリードと同電位に保つことができる点。絶縁台に発生する電荷や表面を伝わって流れる電流の経路を確保することができる点。   A point of a light emitting diode having an anode electrode and a cathode electrode on one side. A point having two leads respectively connected to an anode electrode and a cathode electrode. A point of a light-emitting diode lamp comprising a translucent resin covering the light-emitting diode. The light emitting diode is disposed on an insulating table having a conductive pattern on the surface so that both electrodes are directed downward. The insulating base is placed on the one lead through a conductive adhesive. According to such a configuration, since both electrodes of the light emitting diode face downward, it is possible to prevent light from being shielded by the electrodes and wiring connected to the electrode and to increase light extraction efficiency as compared to when facing upward. Since the insulating table is placed on one lead via a conductive adhesive, the back surface of the insulating table can be kept at the same potential as the lead. It is possible to secure a path for the electric current generated on the insulating table and the current flowing along the surface.

フリップ配置した発光ダイオードを用いる発光ダイオードランプとして利用することができる。   It can be used as a light-emitting diode lamp using a light-emitting diode flip-arranged.

発光ダイオードランプの第１実施例に係る断面図である。It is sectional drawing which concerns on 1st Example of a light emitting diode lamp. 発光ダイオードランプの第１実施例に係る平面図である。It is a top view concerning the 1st example of a light emitting diode lamp. 発光ダイオードランプの第２実施例（本発明の実施例）に係る断面図である。It is sectional drawing which concerns on 2nd Example (Example of this invention) of a light emitting diode lamp. 発光ダイオードランプの第２実施例（本発明の実施例）に係る平面図である。It is a top view which concerns on 2nd Example (Example of this invention) of a light emitting diode lamp. 発光ダイオードランプの第３実施例に係る断面図である。It is sectional drawing which concerns on 3rd Example of a light emitting diode lamp. 発光ダイオードランプの第１及び第２及び第３実施例に係る発光色の色度図である。It is a chromaticity diagram of the luminescent color which concerns on 1st, 2nd and 3rd Example of a light emitting diode lamp. 従来の発光ダイオードランプの断面図である。It is sectional drawing of the conventional light emitting diode lamp. 従来の発光ダイオードランプの平面図である。It is a top view of the conventional light emitting diode lamp.

符号の説明Explanation of symbols

１ リード
５、３４、５９ 絶縁台
６、７、３５、３６ 導電パターン
１１、４０、５９ 青色発光ダイオード
１８、４８ 黄色発光ダイオード
３２ 透光性樹脂 1 Lead 5, 34, 59 Insulation base 6, 7, 35, 36 Conductive pattern 11, 40, 59 Blue light emitting diode 18, 48 Yellow light emitting diode 32 Translucent resin

Claims (2)

一方の面に陽極電極と陰極電極を有する発光ダイオードと、前記陽極電極と陰極電極にそれぞれ接続される２つのリードと、前記発光ダイオードを覆う透光性樹脂とを備えた発光ダイオードランプにおいて、前記２つのリードの一方を、載置部と反射部からなるカップ状部分を有するリードとし、前記載置部の上に、表面に導電パターンを有する絶縁台を固定し、前記発光ダイオードをその両電極が下側を向く様にして前記載置台に載置し、前記反射部が前記発光ダイオードの周囲を囲むことを特徴とする発光ダイオードランプ。   In a light emitting diode lamp comprising: a light emitting diode having an anode electrode and a cathode electrode on one surface; two leads connected to the anode electrode and the cathode electrode; and a translucent resin covering the light emitting diode. One of the two leads is a lead having a cup-shaped portion composed of a placement portion and a reflection portion, an insulating base having a conductive pattern on the surface is fixed on the placement portion, and the light emitting diode is connected to both electrodes. The light-emitting diode lamp is placed on the mounting table in such a manner as to face downward, and the reflection portion surrounds the light-emitting diode. 前記絶縁台は前記発光ダイオードよりも広い面積とし、前記載置部は前記絶縁台よりも広い面積としたことを特徴とする請求項１に記載の発光ダイオードランプ。   The light emitting diode lamp according to claim 1, wherein the insulating base has a larger area than the light emitting diode, and the mounting portion has a larger area than the insulating base.
JP2004373135A 2004-12-24 2004-12-24 Light emitting diode lamp Pending JP2005101662A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185091A (en) * 2011-03-29 2011-09-14 晶科电子（广州）有限公司 Light-emitting diode device and manufacturing method thereof
JP2017212317A (en) * 2016-05-25 2017-11-30 三菱電機株式会社 Energization test device and energization test method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137655A (en) * 1987-11-25 1989-05-30 Hitachi Ltd Optical device
JPH01268074A (en) * 1988-04-20 1989-10-25 Hitachi Ltd Photoelectronic device
JPH0292955U (en) * 1989-01-09 1990-07-24

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137655A (en) * 1987-11-25 1989-05-30 Hitachi Ltd Optical device
JPH01268074A (en) * 1988-04-20 1989-10-25 Hitachi Ltd Photoelectronic device
JPH0292955U (en) * 1989-01-09 1990-07-24

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185091A (en) * 2011-03-29 2011-09-14 晶科电子（广州）有限公司 Light-emitting diode device and manufacturing method thereof
JP2017212317A (en) * 2016-05-25 2017-11-30 三菱電機株式会社 Energization test device and energization test method

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