JP2005101135A - Deformation control method of substrate, near-field exposure method and near-field exposure system - Google Patents

Deformation control method of substrate, near-field exposure method and near-field exposure system Download PDF

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JP2005101135A
JP2005101135A JP2003331026A JP2003331026A JP2005101135A JP 2005101135 A JP2005101135 A JP 2005101135A JP 2003331026 A JP2003331026 A JP 2003331026A JP 2003331026 A JP2003331026 A JP 2003331026A JP 2005101135 A JP2005101135 A JP 2005101135A
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substrate
exposure mask
deformation
exposure
amount
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JP3903032B2 (en
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Shinji Nakazato
進司 中里
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Canon Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a deformation control method which reduces stress especially to a near-field exposure mask and can realize long lifetime by controlling the deformation of a substrate which repeats adhesion/exfoliation, a near-field exposure method, and a near-field exposure system. <P>SOLUTION: The deformation control method of a substrate is provided with a strained variation detecting process for detecting variation of strain generated in a first substrate, and a deformation control process for controlling the variation of the first substrate to a second substrate, at the case of adhesion or exfoliation of the elastically deformable first substrate to/from the second elastically undeformable substrate. On the basis of variation of the strain detected by the strained variation detection process, the deformation control process adjusts physical quantity necessary for adhering the first substrate to the second substrate and/or physical quantity necessary for exfoliating the first substrate from the second substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、基板の変形量制御方法、近接場露光方法及び近接場露光装置に関し、特に集積回路や液晶ディスプレイなどの製造工程におけるフォトマスクへのストレスを軽減しフォトマスクの長寿命化を図るようにした近接場露光方法及び近接場露光装置に関するものである。   The present invention relates to a substrate deformation amount control method, a near-field exposure method, and a near-field exposure apparatus, and particularly to reduce stress on the photomask in a manufacturing process of an integrated circuit, a liquid crystal display, etc., and to extend the life of the photomask. The present invention relates to a near-field exposure method and a near-field exposure apparatus.

近年の電子機器の小型化及び薄型化の要請から、電子機器に搭載される半導体素子の微細化への要求はますます高くなっている。
例えば、マスクまたはレチクルのパターンに対するデザインルールはライン・アンド・スペース（Ｌ＆Ｓ）１３０ｎｍを量産工程で達成しようとし、今後益々小さくなることが予想される。近年主流である投影露光装置は、一般に、光源から出射された光束を利用してマスクを照明する照明光学系とマスクと被露光物との間に配置される投影光学系とを有する。
投影露光装置では一般に解像度は使用する光源の波長が略限界であると言われ、エキシマレーザーを使用しても投影露光装置は０．１μｍ以下のパタ−ンを形成することが困難である。加えて、仮に、より短い波長を有する光源が存在しても、かかる短波長の露光光を投影光学系に使用される光学材料（即ち、レンズの硝材）が透過できずに（その結果被露光物に投影できずに）露光ができなくなるという問題もある。 Due to the recent demand for smaller and thinner electronic devices, there is an increasing demand for miniaturization of semiconductor elements mounted on electronic devices.
For example, the design rule for a mask or reticle pattern is expected to be 130% in line and space (L & S) in a mass production process, and is expected to become smaller in the future. 2. Description of the Related Art In recent years, projection exposure apparatuses that have become mainstream generally include an illumination optical system that illuminates a mask using a light beam emitted from a light source, and a projection optical system that is disposed between the mask and an object to be exposed.
In the projection exposure apparatus, it is generally said that the wavelength of the light source to be used is substantially limited in the resolution, and even if an excimer laser is used, it is difficult for the projection exposure apparatus to form a pattern of 0.1 μm or less. In addition, even if there is a light source having a shorter wavelength, the optical material used for the projection optical system (that is, the glass material of the lens) cannot pass through the exposure light having the shorter wavelength (as a result, the exposure target is exposed). There is also a problem that exposure cannot be performed (because it cannot be projected onto an object).

かかる問題に対して、近年、０．１μｍ以下の微細加工を可能にする手段として近接場光学顕微鏡（Ｓｃａｎｎｉｎｇ Ｎｅａｒ Ｆｉｅｌｄ Ｏｐｔｉｃａｌ Ｍｉｃｒｏｓｃｏｐｅ：ＳＮＯＭ）の原理を用いた露光装置が提案されている。このような露光装置として、例えば、特許文献１あるいは特許文献２では、近接場光が遮光膜の間から滲み出るように構成されたパターンを有する薄膜マスクを、基板上のレジストに対して近接場領域である１００ｎｍ以下まで密着させて露光し、マスク上の微細パターンを一度にレジストに転写し、転写後に薄膜マスクをレジストから剥離するという、近接場光による密着露光方法が提案されている。
特開平１１−１４５０５１号公報 特開平１１−１８４０９４号公報 In recent years, an exposure apparatus using the principle of a scanning near field optical microscope (SNOM) has been proposed as a means for enabling fine processing of 0.1 μm or less to deal with such problems. As such an exposure apparatus, for example, in Patent Document 1 or Patent Document 2, a thin film mask having a pattern configured so that near-field light oozes out from between light-shielding films is used as a near-field to a resist on a substrate. A contact exposure method using near-field light has been proposed in which exposure is performed with close contact to an area of 100 nm or less, a fine pattern on the mask is transferred to a resist at one time, and the thin film mask is peeled off from the resist after transfer.
Japanese Patent Laid-Open No. 11-145051 JP-A-11-184094

ところで、上記の近接場光による密着露光方法においては、前述したように露光に際して、薄膜マスクを基板上のレジストに対し、近接場領域である１００ｎｍ以下まで密着させて露光し、露光後に剥離することが必要となる。
露光マスクをレジスト基板に対して密着・剥離を繰り返す近接場露光装置においては長期間の使用において露光マスクの破壊や、それに伴う清掃工程により、スループットの低下等を招くという問題が生じる。 By the way, in the contact exposure method using near-field light, as described above, during exposure, the thin film mask is exposed to a resist on the substrate to a near-field region of 100 nm or less, and is exposed and peeled off after exposure. Is required.
In a near-field exposure apparatus that repeatedly adheres and peels an exposure mask to a resist substrate, there is a problem that the exposure mask is destroyed and the throughput is lowered due to the cleaning process associated with the exposure mask after a long period of use.

そこで、本発明は、上記課題を解決し、密着・剥離を繰り返す基板の変形量を制御することにより、特に近接場露光用マスクに対するストレスを軽減し長寿命化を図ることが可能となる基板の変形量制御方法、近接場露光方法及び近接場露光装置を提供することを目的とするものである。   Therefore, the present invention solves the above problems and controls the amount of deformation of the substrate that repeatedly repeats adhesion and peeling, thereby reducing the stress on the near-field exposure mask and extending the life of the substrate. An object of the present invention is to provide a deformation amount control method, a near-field exposure method, and a near-field exposure apparatus.

本発明は、以下のように構成した基板の変形量制御方法、近接場露光方法及び近接場露光装置を提供するものである。
すなわち、本発明の基板の変形量制御方法は、弾性変形可能な第１の基板を、弾性変形しない第２の基板に対して変形させて密着させた後に剥離するに際して、これら密着乃至は剥離における該第１の基板の該第２の基板に対する変形量を制御する基板の変形量制御方法であって、前記密着乃至は剥離に際して前記第１の基板に発生する歪みの変化量を検出する歪み変化量検出工程と、前記歪み変化量検出工程で検出された歪みの変化量に基づいて、前記第１の基板を前記第２の基板に密着させるために必要な物理量および／または前記第１の基板を前記第２の基板から剥離するために必要な物理量、を調整して該第１の基板の該第２の基板に対する変形量を制御する基板の変形量制御工程と、を有することを特徴としている。
また、本発明の基板の変形量制御方法は、前記歪み変化量検出工程において、前記第１の基板に発生する歪みの変化量がレーザー変位計で計測された前記第１の基板の変形前の距離情報と変形後の距離情報との変化により検出するように構成することができる。
また、本発明の基板の変形量制御方法は、前記基板の変形量制御工程において、前記第１の基板を前記第２の基板に密着させるために必要な物理量および／または前記第１の基板を前記第２の基板から剥離するために必要な物理量として、前記第１の基板を変形させるための圧力を用いることができる。
また、本発明の基板の変形量制御方法は、前記基板の変形量制御工程における前記基板の密着乃至は剥離に必要な物理量が、予め設定された基板の破壊防止モード、あるいは高スループットモード等の制御パターンから選択する構成を採ることができる。
また、本発明の近接場露光方法は、露光マスクを変形させてレジストに対して密着させた後に剥離し、該露光マスクに形成した微小開口からにじみでる近接場光を用いて露光を行う近接場露光方法において、前記露光マスクの密着乃至は剥離に際して、前記露光マスクの前記レジストに対する変形量を制御する露光マスクの変形量制御工程を有することを特徴としている。
また、本発明の近接場露光方法は、露光マスクの変形量制御工程が、上記したいずれかに記載の基板の変形量制御方法を用いて行われるように構成することができる。
また、本発明の近接場露光装置は、圧力調整容器と微小開口が形成された露光マスクを有し、該露光マスクを前記圧力調整容器の圧力を調整することによって変形させてレジストに対して密着させた後に剥離し、近接場光により露光を行う近接場露光装置において、前記露光マスクの密着乃至は剥離に際して、前記露光マスクの前記レジストに対する変形量を制御する露光マスクの変形量制御手段を有することを特徴としている。
また、本発明の近接場露光装置は、前記露光マスクの変形量制御手段を、前記密着乃至は剥離に際して該露光マスクに発生する歪みの変化量を検出する歪み変化量検出手段を備え、該歪み変化量検出手段で検出された歪みの変化量に基づいて、前記第１の基板を前記第２の基板に密着させるために必要な物理量および／または前記第１の基板を前記第２の基板から剥離するために必要な物理量、を調整して該第１の基板の該第２の基板に対する変形量を制御するように構成することができる。
また、本発明の近接場露光装置は、前記歪み変化量検出手段を、レーザー変位計で計測された該露光マスクの変形前の距離情報と変形後の距離情報との変化により、前記露光マスクに発生する歪みの変化量を検出するように構成することができる。
また、本発明の近接場露光装置は、前記露光マスクの変形量制御手段において、前記露光マスクの密着乃至は剥離に必要な物理量が、予め設定された基板の破壊防止モード、あるいは高スループットモード等の制御パターンから選択されるようにした構成を採ることができる。 The present invention provides a deformation control method for a substrate, a near-field exposure method, and a near-field exposure apparatus configured as follows.
That is, when the substrate deformation amount control method of the present invention is peeled after the first substrate that is elastically deformable is deformed and brought into close contact with the second substrate that is not elastically deformed, the adhesion or separation is performed. A substrate deformation amount control method for controlling a deformation amount of the first substrate with respect to the second substrate, the strain change detecting a variation amount of the strain generated in the first substrate upon the adhesion or peeling. A physical quantity and / or the first substrate necessary to bring the first substrate into close contact with the second substrate based on the amount detection step and the strain change detected in the strain change detection step And a substrate deformation amount control step of adjusting a physical amount necessary for peeling the substrate from the second substrate to control a deformation amount of the first substrate with respect to the second substrate. Yes.
In the substrate deformation amount control method of the present invention, in the strain change amount detecting step, the strain change amount generated in the first substrate is measured by a laser displacement meter before the deformation of the first substrate. It can comprise so that it may detect by the change of distance information and the distance information after a deformation | transformation.
In the substrate deformation amount control method according to the present invention, in the substrate deformation amount control step, the physical quantity and / or the first substrate necessary for bringing the first substrate into close contact with the second substrate is determined. As a physical quantity necessary for peeling from the second substrate, a pressure for deforming the first substrate can be used.
In the substrate deformation amount control method of the present invention, the physical quantity necessary for the adhesion or separation of the substrate in the substrate deformation amount control step is set to a preset substrate destruction prevention mode or a high throughput mode. A configuration for selecting from the control pattern can be adopted.
Further, the near-field exposure method of the present invention is a near-field exposure method in which an exposure mask is deformed and adhered to a resist and then peeled off, and exposure is performed using near-field light that blurs from a minute opening formed in the exposure mask. The exposure method includes an exposure mask deformation amount control step for controlling a deformation amount of the exposure mask with respect to the resist when the exposure mask is closely attached or peeled off.
Further, the near-field exposure method of the present invention can be configured such that the exposure mask deformation amount control step is performed using any one of the above-described substrate deformation amount control methods.
Further, the near-field exposure apparatus of the present invention has a pressure adjustment container and an exposure mask formed with a minute opening, and the exposure mask is deformed by adjusting the pressure of the pressure adjustment container so as to adhere to the resist. In the near-field exposure apparatus that peels off after exposure and performs exposure with near-field light, the exposure mask deformation amount control means controls the deformation amount of the exposure mask with respect to the resist when the exposure mask is closely attached or peeled off. It is characterized by that.
The near-field exposure apparatus of the present invention further comprises a deformation amount control means for detecting the deformation amount of the exposure mask, and a distortion change amount detecting means for detecting a change amount of the distortion generated in the exposure mask upon the adhesion or peeling. Based on the amount of change in strain detected by the amount of change detection means, the physical quantity required to bring the first substrate into close contact with the second substrate and / or the first substrate from the second substrate. It is possible to control the amount of deformation of the first substrate with respect to the second substrate by adjusting the physical amount necessary for peeling.
In the near-field exposure apparatus of the present invention, the distortion change amount detecting means is applied to the exposure mask by a change in distance information before deformation of the exposure mask measured by a laser displacement meter and distance information after deformation. It can be configured to detect the amount of change in distortion that occurs.
In the near-field exposure apparatus of the present invention, in the exposure mask deformation amount control means, a physical quantity necessary for adhesion or peeling of the exposure mask is set in a predetermined substrate destruction prevention mode or high throughput mode. It is possible to adopt a configuration that is selected from these control patterns.

本発明によれば、密着・剥離を繰り返す基板の変形量を制御することにより、特に近接場露光用マスクに対するストレスを軽減し長寿命化を図ることが可能となる基板の変形量制御方法、近接場露光方法及び近接場露光装置を実現することができる。また、変形量の制御パラメータ、歪みの変化率、等をモニターすることで、近接場露光用マスクの寿命予測等が可能となる。   According to the present invention, by controlling the deformation amount of a substrate that repeatedly repeats adhesion and peeling, a substrate deformation amount control method, which can reduce stress on a near-field exposure mask and increase the lifetime, and proximity A field exposure method and a near field exposure apparatus can be realized. Further, by monitoring the deformation amount control parameter, the rate of change of distortion, etc., it is possible to predict the lifetime of the near-field exposure mask.

以下、添付図面を参照して、本発明の実施の形態における密着・剥離を繰り返す近接場露光用マスクの変形量を制御するようにした近接場露光装置の一例について説明する。
図１は本実施の形態における図２に示した近接場露光装置に用いる露光マスクの構成を示す図である。また、図２は本実施の形態における露光マスクの変形量を制御するようにした近接場露光装置の構成を示す図であり、図３は本実施の形態におけるレーザー変位計による露光マスクの変形量の制御について説明する図である。 Hereinafter, an example of a near-field exposure apparatus configured to control the deformation amount of a near-field exposure mask that repeats adhesion and peeling in the embodiment of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a view showing a configuration of an exposure mask used in the near-field exposure apparatus shown in FIG. 2 in the present embodiment. FIG. 2 is a view showing a configuration of a near-field exposure apparatus configured to control the deformation amount of the exposure mask in the present embodiment, and FIG. 3 shows the deformation amount of the exposure mask by the laser displacement meter in the present embodiment. It is a figure explaining the control of.

まず、図１の露光マスク１００について説明する。
図１において、（ａ）は露光マスクのおもて面側、（ｂ）は断面図である。
ここで、「おもて面」とは、遮光膜が設けられた面をいい、「裏面」とは、その反対側をいう。
露光マスク１００は、マスク支持体１０４、マスク母材１０１、遮光膜１０２から構成されている。遮光膜１０２は、マスク母材１０１の上に成膜されており、その遮光膜１０２に微小開口１０３が所望のパターンに形成されている。また、マスク母材１０１は弾性体で構成されており、薄膜として存在している。
この露光マスク１００は、図２に示される近接場露光装置の圧力調整容器内に、露光マスクの裏面が面するように配置して圧力調整を加えマスクのたわみを調整する。 First, the exposure mask 100 of FIG. 1 will be described.
In FIG. 1, (a) is a front surface side of an exposure mask, and (b) is a sectional view.
Here, the “front surface” refers to the surface on which the light shielding film is provided, and the “back surface” refers to the opposite side.
The exposure mask 100 includes a mask support 104, a mask base material 101, and a light shielding film 102. The light shielding film 102 is formed on the mask base material 101, and the microscopic openings 103 are formed in a desired pattern in the light shielding film 102. The mask base material 101 is made of an elastic material and exists as a thin film.
The exposure mask 100 is arranged in the pressure adjustment container of the near-field exposure apparatus shown in FIG. 2 so that the back surface of the exposure mask faces and adjusts the deflection of the mask by adjusting the pressure.

次に、上記のような露光マスクを用い、図２に示される近接場露光装置により、どのように露光マスクの変形量を制御するかについて説明する。
本実施の形態における露光マスクの変形量を制御する大凡の仕組みは、図２に示すように、レーザー変位計３０１により計測された露光マスクの変形前の距離情報と変形後の距離情報の変化を、コントローラー２２０により歪み情報として演算処理し、この歪み情報をに基づいてコントローラー２２０からの指示でポンプ等の圧力調整手段２１３、流量調整手段２１４等により、圧力調整容器２０５内の圧力を調整して露光マスク１００の変形量を調整する。 Next, how to control the deformation amount of the exposure mask by the near-field exposure apparatus shown in FIG. 2 using the exposure mask as described above will be described.
As shown in FIG. 2, the general mechanism for controlling the deformation amount of the exposure mask in the present embodiment is to change the distance information before and after the deformation of the exposure mask measured by the laser displacement meter 301. The controller 220 performs calculation processing as distortion information, and adjusts the pressure in the pressure adjustment container 205 by the pressure adjustment means 213 such as a pump and the flow rate adjustment means 214 according to an instruction from the controller 220 based on the distortion information. The deformation amount of the exposure mask 100 is adjusted.

これらを詳細に説明するため、まず、図２に示される近接場露光装置により、上記したような露光マスクを用いて、どのようにして近接場光によって密着露光を行うかについて説明する。
図２において、被露光物としては、基板２０３の表面にレジスト２０２を形成する（以下、これをレジスト２０２／基板２０３と記す）。レジスト２０２／基板２０３をステージ２０４上に取り付け、ステージ２０４を駆動することにより、露光マスク１００に対する基板２０３のマスク面内２次元方向の相対位置合わせを行う。次に、マスク面法線方向にステージ２０４を駆動し、露光マスク１００のおもて面と基板２０３上のレジスト２０２面との間隔が全面にわたって１００ｎｍ以下になるように両者を密着させる。
この後、露光光源２０９から出射される露光光２１０をコリメータレンズ２１１で平行光にした後、ガラス窓２１２を通し、圧力調整容器２０５内に導入し、露光マスク１００に対して裏面（図２では上側）から照射し、露光マスク１００のおもて面のマスク母材１０１上の遮光膜１０２に形成された微小開口パターン１０３から滲み出す近接場でレジスト２０２の露光を行う。 In order to explain these in detail, first, how to perform contact exposure with near-field light using the above-described exposure mask by the near-field exposure apparatus shown in FIG. 2 will be described.
In FIG. 2, as an object to be exposed, a resist 202 is formed on the surface of a substrate 203 (hereinafter referred to as resist 202 / substrate 203). The resist 202 / substrate 203 is mounted on the stage 204, and the stage 204 is driven to align the substrate 203 relative to the exposure mask 100 in the two-dimensional direction in the mask plane. Next, the stage 204 is driven in the normal direction of the mask surface to bring them into close contact so that the distance between the front surface of the exposure mask 100 and the resist 202 surface on the substrate 203 is 100 nm or less over the entire surface.
After that, the exposure light 210 emitted from the exposure light source 209 is collimated by the collimator lens 211 and then introduced through the glass window 212 into the pressure adjustment container 205, and the back surface (in FIG. The resist 202 is exposed in the near field that irradiates from the upper side) and exudes from the minute aperture pattern 103 formed in the light shielding film 102 on the mask base material 101 on the front surface of the exposure mask 100.

次に、露光マスクとレジスト／基板の密着方法の詳細について図２を用いて説明する。
露光マスク１００のおもて面と基板２０３上のレジスト２０２面がともに完全に平坦であれば、全面にわたって両者を密着させることが可能である。しかしながら、実際には、マスク面やレジスト／基板面に凹凸やうねりが存在するので、両者を近づけ、接触させただけでは、密着している部分と非密着部分が混在する状態になってしまう。
そこで、露光マスク１００の裏面からおもて面方向に向かって圧力を印加することにより、露光マスク１００に弾性変形による撓みを生じさせ、レジスト２０２／基板２０３へ押し付けるようにすることにより、薄膜部が全面にわたって密着させることができる。 Next, details of a method for closely attaching the exposure mask to the resist / substrate will be described with reference to FIG.
If the front surface of the exposure mask 100 and the resist 202 surface on the substrate 203 are both completely flat, it is possible to bring them into close contact over the entire surface. However, in actuality, since there are irregularities and undulations on the mask surface and the resist / substrate surface, if the two are brought close to each other and brought into contact with each other, a close contact portion and a non-contact portion are mixed.
Therefore, by applying pressure from the back surface of the exposure mask 100 toward the front surface, the exposure mask 100 is caused to bend due to elastic deformation and pressed against the resist 202 / substrate 203. Can be adhered over the entire surface.

このような圧力を印加する方法の一例として、図２に示したように、露光マスク１００のおもて面を圧力調整容器２０５外側に面するように、裏面を圧力調整容器２０５内側に面するように配置させ、ポンプ等の圧力調整手段２１３を用いて、圧力調整容器２０５内に高圧ガスを導入し、圧力調整容器２０５内が外気圧より高い圧力になるようにする。
ここで、圧力調整手段２１３から圧力調整容器２０５内に高圧ガスを導入し、圧力調整容器２０５内の圧力を増大させ、露光マスク１００のおもて面と基板２０３上のレジスト２０２面とを全面にわたって均一な圧力で密着させる。
このような方法で圧力の印加を行うと、パスカルの原理により、近接場マスク１００のおもて面と基板２０３上のレジスト２０２面との間に作用する斥力が均一になる。このため、露光マスク１００や基板２０３上のレジスト２０２面に対し、局所的に大きな力が加わったりすることがなく、露光マスク１００や基板２０３、レジスト２０２が局所的に破壊されたりするようなことが生じない。 As an example of a method for applying such pressure, as shown in FIG. 2, the back surface faces the inside of the pressure adjustment container 205 so that the front surface of the exposure mask 100 faces the outside of the pressure adjustment container 205. The high pressure gas is introduced into the pressure regulating container 205 using the pressure regulating means 213 such as a pump so that the pressure inside the pressure regulating container 205 becomes higher than the external pressure.
Here, a high-pressure gas is introduced from the pressure adjusting means 213 into the pressure adjusting container 205 to increase the pressure in the pressure adjusting container 205, so that the front surface of the exposure mask 100 and the resist 202 surface on the substrate 203 are entirely exposed. Adhering with uniform pressure over.
When pressure is applied by such a method, the repulsive force acting between the front surface of the near-field mask 100 and the resist 202 surface on the substrate 203 becomes uniform due to the Pascal principle. Therefore, a large force is not locally applied to the surface of the resist 202 on the exposure mask 100 and the substrate 203, and the exposure mask 100, the substrate 203, and the resist 202 are locally destroyed. Does not occur.

ここでは、露光マスク１００とレジスト２０２／基板２０３を密着させるために、露光マスクの裏面を圧力調整容器２０５内に配置し、圧力調整容器２０５内より低い外気圧との圧力差により、露光マスク１００の裏面側からおもて面側に圧力が加わるようにした例を示したが、逆の構成として、近接場マスクのおもて面およびレジスト／基板を減圧容器内に配置し、減圧容器内より高い外気圧との圧力差により、近接場マスクの裏面側からおもて面側に圧力が加わるようにしても良い。いずれにしても、近接場マスクのおもて面側に比べ、裏面側が高い圧力となるような圧力差を設けるようにすれば良い。   Here, in order to bring the exposure mask 100 and the resist 202 / substrate 203 into close contact with each other, the back surface of the exposure mask is disposed in the pressure adjustment container 205, and the exposure mask 100 is caused by the pressure difference from the external pressure lower than that in the pressure adjustment container 205. Although an example is shown in which pressure is applied from the back side to the front side, as a reverse configuration, the front side of the near-field mask and the resist / substrate are placed in a reduced pressure container, Pressure may be applied from the back surface side of the near-field mask to the front surface side due to a pressure difference with a higher external pressure. In any case, a pressure difference may be provided so that the back surface side has a higher pressure than the front surface side of the near-field mask.

次に、図３を用いて本実施の形態におけるレーザー変位計による露光マスクの変形量の制御について説明する。
図３（ａ）において、レーザー変位系３０１から照射されたレーザー光は露光マスク１００におけるマスク母材１０１と遮光膜１０２により反射され、露光マスク１００の変形前の基準距離がコントローラー２２０により計測される。次に、図３（ｂ）のように露光マスクの変形により露光マスクがレジスト２０２に密着した時点で、再度レーザー変位系３０１により露光マスク１００までの変形時の距離をコントローラー２２０により計測し、それらをコントローラー２２０による演算によりマスクの変位として読み取る。これらの露光マスクの変形前の距離と変形時の距離の計測を、露光マスク１００のレジストへの密着から剥離に到る露光工程全体に亙り連続して実施することにより、露光マスクの連続的な変形・変位量の検出を行う。検出した変形・変位量からコントローラー２２０で歪みを算出し露光マスクへ印加する圧力をコントローラー２２０からの指令で圧力調整手段２１３と流量調整手段２１４により、圧力調整容器２０５内の圧力を制御して、露光マスク１００の変化量を調整する。この時、露光マスク１００の変化量の割合いをコントロールすることで露光マスク１００のストレスを軽減し、長寿命化を図ることが可能となる。また、その際、前記露光マスクの密着乃至は剥離に必要な圧力が、予め設定された露光マスクの破壊防止モード、あるいは高スループットモード等の制御パターンから選択されるように構成しても良い。 Next, control of the deformation amount of the exposure mask by the laser displacement meter in the present embodiment will be described with reference to FIG.
In FIG. 3A, the laser light emitted from the laser displacement system 301 is reflected by the mask base material 101 and the light shielding film 102 in the exposure mask 100, and the reference distance before deformation of the exposure mask 100 is measured by the controller 220. . Next, when the exposure mask is brought into close contact with the resist 202 by deformation of the exposure mask as shown in FIG. 3B, the distance at the time of deformation to the exposure mask 100 is again measured by the laser displacement system 301 by the controller 220. Is read as the displacement of the mask by calculation by the controller 220. By continuously measuring the distance before the deformation of the exposure mask and the distance at the time of the deformation over the entire exposure process from the adhesion of the exposure mask 100 to the resist to the peeling, the exposure mask can be continuously formed. The amount of deformation / displacement is detected. The controller 220 calculates the distortion from the detected deformation / displacement amount and applies the pressure applied to the exposure mask to the pressure from the controller 220 by the pressure adjusting means 213 and the flow rate adjusting means 214 to control the pressure in the pressure adjusting container 205, The amount of change of the exposure mask 100 is adjusted. At this time, by controlling the rate of change of the exposure mask 100, the stress of the exposure mask 100 can be reduced, and the life can be extended. At this time, the pressure required for the contact or separation of the exposure mask may be selected from a preset control pattern such as a exposure mask destruction prevention mode or a high throughput mode.

本発明の実施の形態における露光マスクの構成を示す概略図であり、（ａ）は露光マスクのおもて面側、（ｂ）はその断面図である。It is the schematic which shows the structure of the exposure mask in embodiment of this invention, (a) is the front surface side of an exposure mask, (b) is the sectional drawing. 本実施の形態における露光マスクの変形量を制御するようにした近接場露光装置の構成を示す図。The figure which shows the structure of the near-field exposure apparatus which controlled the deformation amount of the exposure mask in this Embodiment. 本実施の形態におけるレーザー変位計による露光マスクの変形量の制御について説明する図。The figure explaining control of the deformation amount of the exposure mask by the laser displacement meter in this Embodiment.

符号の説明Explanation of symbols

１００：露光マスク
１０１：マスク母材
１０２：遮光膜
１０３：微小開口
１０４：マスク支持体
２０２：レジスト
２０３：基板
２０４：ステージ
２０５：圧力調整容器
２０９：露光光源
２１０：露光光
２１１：コリメータレンズ
２１２：ガラス窓
２１３：ポンプ等の圧力調整手段
２１４：流量調整手段
２２０：コントローラー
３０１：レーザー変位計 100: exposure mask 101: mask base material 102: light shielding film 103: microscopic aperture 104: mask support 202: resist 203: substrate 204: stage 205: pressure adjusting container 209: exposure light source 210: exposure light 211: collimator lens 212: Glass window 213: Pressure adjusting means 214 such as a pump 214: Flow rate adjusting means 220: Controller 301: Laser displacement meter

Claims (10)

弾性変形可能な第１の基板を、弾性変形しない第２の基板に対して変形させて密着させた後に剥離するに際して、これら密着乃至は剥離における該第１の基板の該第２の基板に対する変形量を制御する基板の変形量制御方法であって、
前記密着乃至は剥離に際して前記第１の基板に発生する歪みの変化量を検出する歪み変化量検出工程と、
前記歪み変化量検出工程で検出された歪みの変化量に基づいて、前記第１の基板を前記第２の基板に密着させるために必要な物理量および／または前記第１の基板を前記第２の基板から剥離するために必要な物理量、を調整して該第１の基板の該第２の基板に対する変形量を制御する基板の変形量制御工程と、
を有することを特徴とする基板の変形量制御方法。 When the elastically deformable first substrate is deformed and brought into close contact with the second substrate that is not elastically deformed, the first substrate is deformed with respect to the second substrate in the close contact or peeling. A substrate deformation amount control method for controlling the amount,
A strain change amount detecting step of detecting a change amount of strain generated in the first substrate during the adhesion or peeling;
Based on the strain change detected in the strain change detection step, the physical quantity and / or the first substrate necessary to bring the first substrate into close contact with the second substrate is added to the second substrate. A substrate deformation amount control step of controlling a deformation amount of the first substrate with respect to the second substrate by adjusting a physical amount necessary for peeling from the substrate;
A method for controlling the amount of deformation of a substrate, comprising: 前記歪み変化量検出工程において、前記第１の基板に発生する歪みの変化量がレーザー変位計で計測された前記第１の基板の変形前の距離情報と変形後の距離情報との変化により検出されることを特徴とする請求項１に記載の基板の変形量制御方法。   In the strain change amount detection step, the strain change amount generated in the first substrate is detected by a change between distance information before deformation and distance information after deformation of the first substrate measured by a laser displacement meter. The substrate deformation amount control method according to claim 1, wherein: 前記基板の変形量制御工程において、前記第１の基板を前記第２の基板に密着させるために必要な物理量および／または前記第１の基板を前記第２の基板から剥離するために必要な物理量が、前記第１の基板を変形させるための圧力であることを特徴とする請求項１または請求項２に記載の基板の変形量制御方法。   In the deformation amount control step of the substrate, a physical amount necessary for bringing the first substrate into close contact with the second substrate and / or a physical amount necessary for peeling the first substrate from the second substrate. The substrate deformation amount control method according to claim 1, wherein the pressure is a pressure for deforming the first substrate. 前記基板の変形量制御工程における前記基板の密着乃至は剥離に必要な物理量が、予め設定された基板の破壊防止モード、あるいは高スループットモード等の制御パターンから選択されることを特徴とする請求項１〜３のいずれか１項に記載の基板の変形量制御方法。   The physical quantity required for adhesion or separation of the substrate in the substrate deformation amount control step is selected from a preset control pattern such as a substrate destruction prevention mode or a high throughput mode. 3. The deformation control method for a substrate according to any one of 1 to 3. 露光マスクを変形させてレジストに対して密着させた後に剥離し、該露光マスクに形成した微小開口からにじみでる近接場光を用いて露光を行う近接場露光方法において、
前記露光マスクの密着乃至は剥離に際して、前記露光マスクの前記レジストに対する変形量を制御する露光マスクの変形量制御工程を有することを特徴とする近接場露光方法。 In the near-field exposure method in which the exposure mask is deformed and peeled after being in close contact with the resist, and exposure is performed using near-field light that oozes from a minute opening formed in the exposure mask.
A near-field exposure method comprising: an exposure mask deformation amount control step for controlling an amount of deformation of the exposure mask with respect to the resist when the exposure mask is closely attached or peeled off. 露光マスクの変形量制御工程が、請求項１〜４のいずれか１項に記載の基板の変形量制御方法を用いて行われることを特徴とする請求項５に記載の近接場露光方法。   6. The near-field exposure method according to claim 5, wherein the exposure mask deformation amount control step is performed using the substrate deformation amount control method according to any one of claims 1 to 4. 圧力調整容器と微小開口が形成された露光マスクを有し、該露光マスクを前記圧力調整容器の圧力を調整することによって変形させてレジストに対して密着させた後に剥離し、近接場光により露光を行う近接場露光装置において、
前記露光マスクの密着乃至は剥離に際して、前記露光マスクの前記レジストに対する変形量を制御する露光マスクの変形量制御手段を有することを特徴とする近接場露光装置。 It has an exposure mask formed with a pressure adjustment container and a minute opening, and the exposure mask is deformed by adjusting the pressure of the pressure adjustment container and is brought into close contact with the resist, and then peeled off and exposed by near-field light. In the near-field exposure apparatus that performs
A near-field exposure apparatus comprising exposure mask deformation amount control means for controlling a deformation amount of the exposure mask with respect to the resist when the exposure mask is closely attached or peeled off. 前記露光マスクの変形量制御手段は、前記密着乃至は剥離に際して該露光マスクに発生する歪みの変化量を検出する歪み変化量検出手段を備え、該歪み変化量検出手段で検出された歪みの変化量に基づいて、前記第１の基板を前記第２の基板に密着させるために必要な物理量および／または前記第１の基板を前記第２の基板から剥離するために必要な物理量、を調整して該第１の基板の該第２の基板に対する変形量を制御するように構成されていることを特徴とする請求項７に記載の近接場露光装置。   The exposure mask deformation amount control means includes a distortion change amount detection means for detecting a change amount of distortion generated in the exposure mask during the adhesion or peeling, and a change in distortion detected by the distortion change amount detection means. Based on the amount, a physical quantity necessary for closely attaching the first substrate to the second substrate and / or a physical quantity necessary for separating the first substrate from the second substrate are adjusted. The near-field exposure apparatus according to claim 7, wherein the near-field exposure apparatus is configured to control a deformation amount of the first substrate with respect to the second substrate. 前記歪み変化量検出手段が、前記露光マスクに発生する歪みの変化量を、レーザー変位計で計測された該露光マスクの変形前の距離情報と変形後の距離情報との変化により検出するように構成されていることを特徴とする請求項８に記載の近接場露光装置。   The distortion change amount detecting means detects a change amount of distortion generated in the exposure mask based on a change in distance information before deformation and distance information after deformation of the exposure mask measured by a laser displacement meter. 9. The near-field exposure apparatus according to claim 8, wherein the near-field exposure apparatus is configured. 前記露光マスクの変形量制御手段において、前記露光マスクの密着乃至は剥離に必要な物理量が、予め設定された前記露光マスクの破壊防止モード、あるいは高スループットモード等の制御パターンから選択されるように構成されていることを特徴とする請求項８または請求項９に記載の近接場露光装置。   In the exposure mask deformation amount control means, a physical quantity required for adhesion or separation of the exposure mask is selected from a preset control pattern such as the exposure mask destruction prevention mode or the high throughput mode. 10. The near field exposure apparatus according to claim 8, wherein the near field exposure apparatus is configured.
JP2003331026A 2003-09-24 2003-09-24 Near-field exposure method Expired - Fee Related JP3903032B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006001520A1 (en) * 2004-06-29 2006-01-05 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and exposure mask
WO2008129982A1 (en) * 2007-04-19 2008-10-30 Nikon Corporation Substrate processing method and system, and device manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006001520A1 (en) * 2004-06-29 2006-01-05 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and exposure mask
US7740992B2 (en) 2004-06-29 2010-06-22 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and exposure mask
WO2008129982A1 (en) * 2007-04-19 2008-10-30 Nikon Corporation Substrate processing method and system, and device manufacturing method

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