JP2006093622A - Proximity field exposure method and proximity field exposure equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a proximity field exposure method and proximity field exposure equipment by which adhesion of foreign matters to an exposure mask is suppressed, a decline in yield is prevented, throughput is improved, and frequencies durable in use are increased reducing elastic deterioration causing breakdown of the exposure mask, in contact exposure by the exposure mask. <P>SOLUTION: In the proximity field exposure method in which exposure is made using a proximity field which oozes from a minute opening formed at the exposure mask, a contact/peeling process is used where the exposure mask is peeled after the exposure mask 501 elastically deformable is deformed to and put into close contact with a resist substrate 502, wherein a contact control method and its equipment for the proximity field exposure mask are constituted employing piezoelectric actuators 505, 506 to put the exposure mask into contact with and peel it from the resist substrate in the contact/peeling process. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a near-field exposure method and a near-field exposure apparatus.

Due to the recent demand for smaller and thinner electronic devices, there is an increasing demand for miniaturization of semiconductor elements mounted on electronic devices. For example, the design rule for the mask or reticle pattern is expected to be 90% in line and space (L & S) in the mass production process, and is expected to become smaller in the future.
2. Description of the Related Art In recent years, projection exposure apparatuses that have become mainstream generally include an illumination optical system that illuminates a mask using a light beam emitted from a light source, and a projection optical system that is disposed between the mask and an object to be exposed. In the projection exposure apparatus, it is generally said that the wavelength of the light source to be used is substantially limited in resolution, and even if an excimer laser is used, it is difficult for the projection exposure apparatus to form a pattern of 0.05 μm or less.
In addition, even if there is a light source having a shorter wavelength, the optical material used for the projection optical system (that is, the glass material of the lens) cannot pass through the exposure light having the shorter wavelength (as a result, the exposure target is exposed). There is also a problem that exposure cannot be performed (because it cannot be projected onto an object).

In recent years, an exposure apparatus using the principle of a scanning near field optical microscope (SNOM) has been proposed as a means for enabling microfabrication of 0.05 μm or less in response to such a problem. For example, in Patent Document 1 and Patent Document 2, a near-field light that exudes from a minute aperture pattern having a size of 100 nm or less formed on a mask surface by bringing a mask that can be elastically deformed in the normal direction of the mask surface into close contact with the resist substrate. Has proposed a device that performs local exposure exceeding the wavelength limit of light on an object to be exposed. As a feature of this method, near-field light that oozes out from a minute aperture is localized up to a distance of about the wavelength of the light incident on the aperture, so the distance between the object to be processed and the aperture is preferably less than the wavelength of the light. Needs to be close to a distance of 100 nm or less. For this reason, a mask that can be elastically deformed is used as the exposure mask, and the exposure mask is made to follow the substrate by bending the exposure mask. At that time, as means for deflecting the mask and copying the substrate, for example, as shown in FIG. 6, a means for bringing the exposure mask into close contact with the photoresist on the substrate by applying pressure to the exposure mask by a piston operation or the like. Etc. are used.
Japanese Patent Laid-Open No. 11-145051 JP-A-11-184094

  However, in the near-field exposure by the above-described conventional contact exposure, since a means such as a piston operation is used to bring the exposure mask into close contact with the resist substrate, the piston sliding portion is lubricated to obtain a stable pressure. It is necessary to secure the sealing property by applying an agent.For this reason, volatile substances from these lubricants and foreign matters from the sliding parts are mixed in the pressure vessel, causing the following problems. It has occurred. That is, if the back surface of the exposure mask is contaminated, the uniformity of irradiation with the exposure light to the exposure mask pattern is deteriorated, so it is necessary to clean the back surface and remove foreign matter. The number of cleaning operations increases, yield decreases, and it is necessary to remove the mask from the exposure apparatus for cleaning in order to remove foreign matter from the mask, resulting in a decrease in throughput.

  In addition, since the exposure mask used in such contact exposure uses an elastic mask so as to follow the substrate, if an adsorption force acts between the exposure mask and the resist substrate, the exposure mask is removed from the resist substrate. At the time of peeling, a force is applied to the exposure mask, and there is a danger that the mask will be destroyed due to this adsorption force. For this reason, conventionally, it is necessary to increase the number of the same exposure masks to be manufactured, which causes an increase in cost.

  In view of the above-described problems, the present invention can prevent adhesion of foreign matters to an exposure mask during close contact exposure using an exposure mask, thereby preventing a decrease in yield and improving throughput, and an exposure mask. It is an object of the present invention to provide a near-field exposure method and a near-field exposure apparatus that can reduce the elastic deterioration that leads to destruction and increase the number of times of use durability.

The present invention provides a near-field exposure method and a near-field exposure apparatus configured as follows.
That is, the near field exposure mask adhesion control method of the present invention is formed on the exposure mask using an adhesion / peeling process in which an elastically deformable exposure mask is deformed and adhered to the resist substrate and then peeled off. In a near-field exposure method in which exposure is performed using a near field that oozes out from a minute opening, a piezoelectric actuator is used for adhesion and separation of the exposure mask with respect to the resist substrate in the adhesion and separation step.
The near field exposure mask contact control apparatus of the present invention comprises an exposure mask that can be elastically deformed and a mask deformation means for deforming the exposure mask, and the exposure mask is deformed by the mask deformation means to form a resist. In a near-field exposure apparatus that performs close-field light exposure by being brought into close contact with and peeled off from a substrate, the mask deforming means is constituted by a piezoelectric actuator.

  According to the present invention, during close contact exposure using an exposure mask, adhesion of foreign matter to the exposure mask can be suppressed to prevent a decrease in yield, to improve throughput, and to break the exposure mask. It is possible to realize a near-field exposure method and a near-field exposure apparatus that can reduce the elastic deterioration to be reached and increase the number of use durability times.

In the following, as an embodiment of the present invention, an example of a contact peeling method and a contact peeling means between an exposure mask and a substrate in a near-field exposure method will be described with reference to the drawings.
FIG. 1 is a diagram showing a configuration of a near-field exposure mask used in the adhesion peeling method and means in the present embodiment. FIG. 1 (a) is a plan view of the near-field exposure mask, and FIG. FIG.
FIG. 2 is a view showing the arrangement of an exposure apparatus that uses the adhesion peeling method and means in the present embodiment to prevent adhesion of foreign matter on the back side of the exposure mask and reduce the elastic deterioration of the exposure mask.

In FIG. 1, reference numeral 100 denotes an exposure mask. FIG. 1A shows the front surface side of the exposure mask 100. Here, the “front surface” means a surface provided with a light shielding film, and the “back surface” means the opposite side.
Reference numeral 101 denotes a mask base material, 102 denotes a light shielding film, 103 denotes a minute opening, 104 denotes a mask support, and 105 and 106 denote piezoelectric actuators.
The exposure mask 100 includes a mask support 104, a mask base material 101, a light shielding film 102, and piezoelectric actuators 105 and 106.
The light shielding film 102 is formed on the mask base material 101, and the microscopic openings 103 are formed in a desired pattern in the light shielding film 102.
The mask base material 101 is made of an elastic material and exists as a thin film. The piezoelectric actuator 105 is a bimorph type that sandwiches the mask base material 101, and the center end side of the exposure mask can be expanded and contracted in the normal direction of the mask surface by taking out electrodes from both the front surface and the back surface and applying a voltage. It is formed to be able to.
The piezoelectric actuator 106 is a lateral effect type that sandwiches the mask base material 101 and takes out electrodes from both the front surface and the back surface and applies a voltage to expand and contract in the lateral direction toward the center end side of the exposure mask. It is formed so that it can be.

Next, the process of exposing the resist in the near field that exudes from the minute aperture pattern in the present embodiment using the exposure apparatus shown in FIG. 2 to which the configuration of the exposure mask of FIG. 1 is applied will be described.
In FIG. 2, 201 is an exposure mask, 202 is a resist, 203 is a substrate, 204 is a stage, 205 is a mask base material, 206 is a light shielding film, and 207 and 208 are piezoelectric actuators. Reference numeral 209 denotes an exposure light source, 210 denotes exposure light, 211 denotes a collimator lens, 212 denotes a light source, and 213 denotes a light receiving unit.

The exposure light source 209 of the near-field exposure apparatus is arranged so that the back surface of the exposure mask faces, and a voltage is applied to the piezoelectric actuators 207 and 208 to adjust the deflection of the mask.
As an object to be exposed, a resist 202 is formed on the surface of the substrate 203 (hereinafter referred to as 202 / substrate 203). The resist 202 / substrate 203 is mounted on the stage 204, and the stage 204 is driven to align the substrate 203 relative to the exposure mask 201 in the two-dimensional direction in the mask plane.
Next, the stage 204 is driven in the normal direction of the mask surface to bring them into close contact so that the distance between the front surface of the exposure mask 201 and the resist 202 surface on the substrate 203 is 100 nm or less over the entire surface.
After that, the exposure light 210 emitted from the exposure light source 209 is collimated by the collimator lens 211, and then irradiated to the exposure mask 201 from the back surface (upper side in FIG. 2). The resist 202 is exposed in a near field that exudes from a minute opening pattern formed in the light shielding film 206 on the base material 205.

Next, a process until the exposure mask and the resist / substrate are in close contact with each other will be described with reference to FIGS.
If the front surface of the exposure mask 201 and the resist 202 surface on the substrate 203 are both completely flat, they can be brought into close contact over the entire surface. However, in actuality, since there are irregularities and undulations on the mask surface and the resist / substrate surface, if the two are brought close to each other and brought into contact with each other, a close contact portion and a non-contact portion are mixed.
Therefore, by applying a voltage to the exposure mask on which the piezoelectric actuators 207 and 208 are formed, bending due to elastic deformation from the back surface of the exposure mask 201 toward the front surface direction is caused and pressed against the resist 202 / substrate 203. The thin film portion can be adhered over the entire surface.

  In the present embodiment, means using an exposure mask formed with piezoelectric actuators 207 and 208 other than the conventional method of applying pressure as described above is used. That is, as an example of a method for elastically deforming the exposure mask, as shown in FIG. 2, piezoelectric actuators 207 and 208 are formed in the exposure mask 201, and the front surface of the exposure mask 201 is placed on the resist 202 / substrate 203 side. And means for elastically deforming the exposure mask 201 by applying a voltage to both electrodes of each of the piezoelectric actuators 207 and 208 so as to face each other.

  Here, among the elastic deformation means of the exposure mask 201, the direction in which the exposure mask 201 is elastically deformed is determined by first applying a voltage to the piezoelectric actuator 207. Next, a voltage is applied to the piezoelectric actuator 208, and the exposure mask 201 is elastically deformed in a direction closer to the substrate 203, so that the front surface of the exposure mask 201 and the resist 202 surface on the substrate 203 are in close contact with each other. To. This close contact state is confirmed by using an optical displacement sensor composed of the light source 212 and the light receiving unit 213 depending on whether a predetermined spot of the reflected light on the exposure mask is in close contact with the object to be exposed. At that time, the light emitted from the light source 212 is first applied to the thin film portion of the exposure mask 201 that is the object to be detected. The light source 212 emits light so that the reflected light of the irradiated light strikes the light receiving unit 213. Next, when a displacement occurs in the exposure mask 201, which is the object to be detected, the spot position of the reflected light on the light receiving portion 213 changes accordingly, and this is read as the displacement of the mask to check the contact state.

Next, a method of elastically deforming the exposure mask using a piezoelectric actuator and bringing the exposure mask into close contact with the resist substrate will be described with reference to FIG.
Here, in FIG. 3, (3- *) shows a state of change in which the exposure mask 301 is in close contact with the object 302 to be exposed to a predetermined area.
FIG. 3 (3-1) shows a state where the exposure mask 301 has not been bent yet. After that, when the piezoelectric actuators 303 and 304 configured in the exposure mask 301 are driven to bend and bend, FIG. 3 (3-2), (3-3), (3-4), and (3-5) Change.
In (3-2), the piezoelectric actuator 303 for determining the bending direction of the exposure mask 301 is driven.
In (3-3), the piezoelectric actuator 304 for bending the exposure mask 301 is driven, and the central portion of the exposure mask 301 starts to come into close contact with the resist substrate 302.
In (3-4), the piezoelectric actuator 304 for further bending the exposure mask 301 is driven to widen the contact portion on the object to be exposed. In (3-5), the exposure mask is in close contact with the object to be exposed to a predetermined area. .

After the exposure mask is elastically deformed in this way and exposed in a state of being in close contact with the resist substrate, the exposure mask and the resist substrate are peeled off.
When an adsorption force acts between the exposure mask and the resist at the time of peeling, a difference from the state of change of the exposure mask at the time of adhesion occurs. In other words, if there is no adsorption force between the exposure mask and the resist substrate, the trajectory of the thin film at the time of adhesion is traced back, but if there is an adsorption force, the thin film and the resist are peeled off. A large force is required to cause a risk of breaking the exposure mask. In other words, if the adsorption force between the thin film and the resist is large, a large force is used to peel the thin film and the resist, which increases the burden on the exposure mask and increases the amount of deformation of the exposure mask. As a result, the exposure mask may not be able to withstand that load and may be destroyed.

Here, a state of deformation when the exposure mask is peeled off from the resist will be described with reference to FIG.
FIG. 4 shows a state of the exposure mask 401 when the above-described piezoelectric actuator 404 is also used as a peeling auxiliary means, and the state is shown in order from (4-1) to (4-8) in FIG. I will explain later.
In (4-1), the thin film and the resist substrate 402 are in close contact with each other. At this time, it is assumed that an adsorption force is acting between the thin film and the resist.
Thereafter, as shown in (4-2), in order to peel the thin film from the resist, the piezoelectric actuator 404 for deflecting the exposure mask 401 is driven in a direction not deflected, but the adsorption force between the thin film and the resist. Is not sufficient to overcome the attractive force, and only the region where the thin film is not in contact changes.
Further, when the piezoelectric actuator 404 is driven in a direction that does not bend, peeling proceeds to (4-3). However, if the adsorption force is strong between the thin film and the resist, the peeling does not proceed only by increasing the driving amount. As shown in (4-4).

  Here, as a peeling assist method in the present embodiment, as shown in (4-5), a minute drive is performed in a direction in which the piezoelectric actuator 404 is bent, and then a minute drive is performed in a direction in which the exposure mask is not bent. Repeat minute driving in both directions. Then, as shown in (4-6), the fine vibration caused by the minute drive spreads over the entire exposure mask 401, so that the attractive force is weakened, and peeling is started at the adsorbed portion. Then, as shown in (4-7), the piezoelectric actuator 403 for defining the bending direction of the exposure mask 401 is driven so as to be in the initial state, and is in a state before being bent (4-8). ).

As described above in order, even if there is an adsorption force between the thin film and the resist, by performing peeling assistance using the piezoelectric actuator 404 as a peeling assistance means, the trajectory of the deformation of the thin film that is followed during close contact in FIG. Then, the trajectory diagram 4 of the deformation of the thin film followed at the time of peeling can be made substantially equal.
Further, in (4-2), when the state is not substantially the same as in FIG. 3 (3-4), that is, when the force to peel off the thin film is weaker than the adsorption force, as in (4-5). By repeatedly performing micro-driving in both directions, in which the piezoelectric actuator 404 is micro-driven in a direction to bend and then the exposure mask 401 is not deflected, the peeling force is weakened and peeling is advanced. This can be brought into a state substantially similar to (3-4).

  Further, in the above-described embodiment, the center position of the exposure mask is slightly shifted by making the voltage applied to the lateral effect type piezoelectric actuators arranged on the left and right sides to bend the exposure mask uneven. Therefore, it is possible to use a means for correcting the alignment with the object to be exposed.

In the above-described embodiment, the piezoelectric mask is configured on the exposure mask as a contact peeling means for the exposure mask and the object to be exposed. However, the present invention is not limited to such a contact peeling means. .
As another example of bending the exposure mask, it is possible to adopt a method in which an operating part for bending the exposure mask is not provided on the exposure mask side, but an operating part for bending the exposure mask is provided on the exposure apparatus side. is there.
In the embodiment, when the exposure mask and the resist are adhered and peeled, the adsorption state between the exposure mask and the resist can be read from a change in the angle of the thin film. It is also possible to read from the physical quantity required for close contact and the physical quantity required for peeling (for example, the difference in driving amount of the piezoelectric element), or the difference between the physical quantity and the thin film. It is also possible to use a method of reading from a change in the angle. And in a present Example, the structure which implements the above-mentioned peeling assistance method based on the adsorption | suction state detected by these can be taken.

  In the above description, the direction in which the exposure mask is bent is determined by using a bimorph type piezoelectric actuator, but a method of determining the direction in which the exposure mask is bent by providing a mechanical guide is also conceivable, or the exposure mask A method is also conceivable in which a magnetic material is contained in the light-shielding film and the direction of bending is determined by generation of a magnetic field by an electromagnet provided near the object to be exposed. As described above, the present invention naturally includes those that exhibit a function by combining a plurality of other means.

  According to the present embodiment described above, it is possible to prevent adhesion of foreign matters on the back surface of the exposure mask and reduce the adsorption force between the substrates. As a result, the number of times of cleaning the back surface of the exposure mask is reduced, and a decrease in yield due to an exposure pattern defect can be reduced. Further, since it is not necessary to remove the mask from the exposure apparatus and clean it in order to remove foreign substances from the mask, the throughput can be improved. In addition, the exposure mask peeling assist method and the peeling assist means reduce the adsorption force between the substrates in close contact so that the mask can be peeled off, thereby making it particularly elastic to cause destruction of the near-field exposure mask during exposure. Deterioration can be reduced, the life until the exposure mask is destroyed can be extended, and the number of times of use of the exposure mask per sheet can be increased, which can greatly reduce the cost.

Examples of the present invention will be described below.
This example is a specific example in which adhesion peeling and peeling assistance are performed between an exposure mask and a photoresist used in the exposure apparatus described in the embodiment.
The front surface of the exposure mask 501 facing the back side of the exposure mask fixture 507 in the exposure apparatus shown in FIG. 5 and the photoresist front surface of the substrate 503 coated with the photoresist 502 as the object to be exposed. The interval was fixed to about 100 μm. At this time, the portion of the exposure mask 501 used as a thin film had a size of 20 mm × 20 mm and a thickness of 1 μm. The exposure mask 501 and the photoresist 502 are brought into close contact with each other by bending the exposure mask 501 while fixing the distance between the exposure mask 501 and the photoresist 502.

  Therefore, out of the two types of piezoelectric actuators 505 and 506 configured to sandwich the thin film portion of the exposure mask 501, electrodes are taken out from both the front surface and the back surface of the bimorph type piezoelectric actuator 505, and exposure is performed. A voltage was applied so that the center end side of the mask 501 extended in a direction approaching the substrate 503 which is the mask normal direction. Next, electrodes are taken out from both the front and back surfaces of the lateral effect type piezoelectric actuator 506 arranged outside the piezoelectric actuator 505, and the exposure mask 501 is increased from 0v so as to bend in the direction approaching the substrate 503. While applying. At this time, a laser beam LD collimated to a beam diameter of 100 μm by a semiconductor laser 512 having a wavelength of 630 nm is irradiated to a portion 4 mm away from the center of the thin film portion of the exposure mask, and the reflected light therefrom is PSD (semiconductor position). Detector 513. At this time, the optical axis of the beam was irradiated with the laser in the same direction as the method of expanding and contracting the exposure mask 501.

  As the thin film portion of the exposure mask 501 gradually bends, the position of the spot on the PSD 513 that receives the reflected light changes, and the voltage output from the PSD 513 changes accordingly. If the output of the PSD 513 is large, it indicates that the reflected light spot is located below the light receiving unit. When a voltage is applied to the piezoelectric actuator 506 following the piezoelectric actuator 505, the output value of the PSD 513 decreases, increases again with a certain applied voltage value as a boundary, and is substantially the same as the output before the exposure mask is bent, Further, even if the voltage value is increased, the output of PSD 513 does not change. This indicates that the exposure mask 501 and the photoresist 502 are in close contact. From the output from the PSD 513, even if the applied voltage value is increased, the output of the PSD 513 does not change, so that the adhesion peeling determination control PC determines that the exposure mask 501 and the photoresist 502 are in close contact, and the lateral effect type piezoelectric actuator 506 The voltage applied to is maintained.

  Then, the photoresist 502 is exposed by irradiating g-line (wavelength 436 nm) light from a mercury lamp 508. After the exposure, the exposure mask 501 is shifted from the photoresist 502 to a peeling operation. In order to peel the exposure mask 501 from the close contact state with the photoresist 502, if no attractive force is acting between the mask 501 and the photoresist 502, the exposure mask 501 is decreased from the holding applied voltage to the lateral effect type piezoelectric actuator 506. When the applied voltage is returned to the initial value, the bending is eliminated and peeling is performed. Next, the exposure mask 501 is returned to the initial state by decreasing the holding applied voltage value of the bimorph piezoelectric actuator 505 and returning the applied voltage to the initial value.

  Here, in the case where the exposure mask 501 is peeled from the contact state with the photoresist 502, when an adsorption force is acting between the exposure mask 501 and the photoresist 502, a peeling assist operation is performed. The output value of PSD 513 is measured in the process of decreasing from the holding applied voltage to the lateral effect type piezoelectric actuator 506, and compared with the output value of PSD 513 when the same voltage is applied in the adhesion process.

  When the output value of the PSD 513 at this time is smaller than the output value of the PSD 513 when the same voltage is applied in the adhesion process, that is, when the adsorption force is larger than the force with which the exposure mask 501 is peeled off from the photoresist 502, the peeling is performed. As an auxiliary operation, it is repeated that ΔVa is increased in a direction approaching the holding applied voltage value at the time of completion of close contact with the lateral effect type piezoelectric actuator 506, and further decreased by ΔVa after a certain fixed time. That is, the expansion and contraction is repeated in the direction in which the exposure mask 501 is bent, and the adsorption force between the exposure mask 501 and the photoresist 502 is weakened. When the output value of PSD 513 is confirmed again, and it can be confirmed that the output value of PSD 513 is substantially equal to the output value of PSD 513 when the same voltage is applied in the adhesion process, that is, exposure mask 501 is photoresist 502. When it can be confirmed that the film has been peeled off, the applied voltage value to the lateral effect type piezoelectric actuator 506 is further reduced to eliminate the bending of the exposure mask 501. If the output value of the PSD 513 is smaller than the output value of the PSD 513 when the same voltage is applied in the contact process, the lateral effect type piezoelectric actuator 506 is again operated to repeatedly increase and decrease the applied voltage value ΔVa. Thereafter, the output value of PSD 513 is confirmed.

  By repeating this operation several times, it is confirmed that the exposure mask 501 begins to peel from the photoresist 502. Then, the voltage applied to the lateral effect type piezoelectric actuator 506 is decreased to the initial value, and the deflection of the exposure mask 601 is eliminated. Subsequently, the exposure mask 501 is returned to the initial state by decreasing the holding applied voltage value of the bimorph piezoelectric actuator 505 and returning the applied voltage to the initial value, and the output voltage value of the PSD 513 at this time returns to the initial value, thereby exposing the exposure mask. It is detected that the bending of 501 has been eliminated.

As described above, by applying voltage to two types of piezoelectric actuators, ie, the bimorph type piezoelectric actuator 505 and the lateral effect type piezoelectric actuator 506 configured to sandwich the thin film portion of the exposure mask 501, the exposure mask is provided. By performing the adhesion peeling operation between 501 and the photoresist 502, dust generation in the exposure apparatus could be reduced.
Also, during the peeling operation of the exposure mask 501 and the photoresist 502, the output of the light receiving unit PSD 513 is monitored, and if the peeling does not start with the voltage applied to the lateral effect type piezoelectric actuator 506 where the peeling should start, the peeling assist operation By urging the peeling using, the elastic deterioration due to an excessive load applied to the exposure mask 501 could be reduced.

It is a figure which shows the structure of the mask for near field exposure used for the adhesion peeling method and means in embodiment of this invention, (a) is a top view of the mask for near field exposure, (b) is the sectional drawing. The figure which shows the structure of the exposure apparatus made to reduce the adhesion deterioration of the exposure mask back surface, and the elastic deterioration of an exposure mask using the contact | adherence peeling method and means in embodiment of this invention. It is a figure which shows the mode of a deformation | transformation at the time of contact | adherence to the resist of an exposure mask. The figure which shows the mode of a deformation | transformation at the time of peeling from the resist of an exposure mask (when the peeling assistance method is used). 1 is a diagram showing a configuration of an exposure apparatus in Embodiment 1 of the present invention. The figure which shows the structure of the contact | adherence control mechanism of the near field exposure mask in a prior art example.

Explanation of symbols

100: exposure masks 101, 205, 206: mask base material 102: light shielding film 103: microscopic aperture 104: mask support 105, 106, 207, 208, 303, 304, 403, 404, 505, 506: piezoelectric actuator 201, 301, 401, 501: Exposure mask 202, 502: Resist 203, 503: Substrate 204, 504: Stage 205: Mask base material 206: Light shielding film 209, 508: Exposure light source 210 509: Exposure light 211, 510: Collimator lens 212 : Light source 213: Light receiving unit 302, 402: Resist substrate 507: Exposure mask fixture 512: Semiconductor laser 513: PSD (semiconductor position detector)

Claims (11)

A near-field exposure method for performing exposure using a near-field that exudes from a minute opening formed in the exposure mask, using an adhesion / peeling step in which an elastically deformable exposure mask is deformed and adhered to a resist substrate and then peeled off. In
A near-field exposure method, wherein a piezoelectric actuator is used for adhesion and separation of the exposure mask with respect to the resist substrate in the adhesion / peeling step.   The near-field exposure method according to claim 1, wherein the piezoelectric actuator is configured on the exposure mask.   The piezoelectric actuator includes: a first piezoelectric actuator that expands and contracts a central end side of the exposure mask in a mask surface normal direction; and a second piezoelectric actuator that expands and contracts the exposure mask laterally toward the center end side of the exposure mask. The near field exposure method according to claim 1, wherein the near field exposure method is a piezoelectric actuator including a piezoelectric actuator.   In the adhesion / peeling step, a voltage is first applied to the first piezoelectric actuator to determine the elastic deformation direction of the exposure mask, and then a voltage is applied to the second piezoelectric actuator so that the exposure mask is moved by the resist substrate. 4. The near-field exposure method according to claim 3, further comprising a process of elastically deforming in an approaching direction and bringing the exposure mask into close contact with the resist substrate.   In the adhesion / peeling step, when the exposure mask is peeled off from the resist substrate, the exposure mask is peeled off using the second piezoelectric actuator based on the adsorption state between the exposure mask and the resist substrate. 5. The near-field exposure method according to claim 3, further comprising a peeling assist process for assisting.   The adsorption state is a difference between a physical quantity required to adhere the exposure mask to the resist substrate and a physical quantity required to peel the exposure mask from the resist substrate, and / or deformation of the exposure mask with respect to the resist substrate. 6. The near-field exposure method according to claim 5, wherein the near-field exposure method is detected from an amount.   The near field exposure method according to claim 6, wherein the physical quantity is a driving amount of a piezoelectric actuator. Proximity having an exposure mask that can be elastically deformed and a mask deformation means for deforming the exposure mask. The exposure mask is deformed by the mask deformation means to be in close contact with and peeled off from the resist substrate. In field exposure equipment,
The near field exposure apparatus characterized in that the mask deformation means is constituted by a piezoelectric actuator.   9. The near field exposure apparatus according to claim 8, wherein the piezoelectric actuator is provided on the exposure mask.   The piezoelectric actuator has a first piezoelectric actuator that expands and contracts the central end side of the exposure mask in the mask surface normal direction, and a second that expands and contracts the exposure mask laterally toward the central end side of the exposure mask. The near field exposure apparatus according to claim 8, further comprising a piezoelectric actuator.   From the difference between the physical quantity required to adhere the exposure mask to the resist substrate, the physical quantity required to peel the exposure mask from the resist substrate, and / or the deformation amount of the exposure mask with respect to the resist substrate, the exposure An exposure state detection unit configured to detect an adsorption state between the mask and the resist substrate, the second piezoelectric actuator is driven based on the adsorption state detected by the adsorption state detection unit, and the exposure mask The near-field exposure apparatus according to claim 10, wherein the near-field exposure apparatus is configured to assist peeling.

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