JP2005093477A5 - - Google Patents

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Publication number
JP2005093477A5
JP2005093477A5 JP2003320819A JP2003320819A JP2005093477A5 JP 2005093477 A5 JP2005093477 A5 JP 2005093477A5 JP 2003320819 A JP2003320819 A JP 2003320819A JP 2003320819 A JP2003320819 A JP 2003320819A JP 2005093477 A5 JP2005093477 A5 JP 2005093477A5
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JP
Japan
Prior art keywords
substrate
cluster
sic
generating
source gas
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JP2003320819A
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JP4396195B2 (ja
JP2005093477A (ja
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Publication of JP2005093477A5 publication Critical patent/JP2005093477A5/ja
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Claims (1)

  1. ＳｉＣのＣＶＤエピタキシャル成長方法において、基板上に原料ガスのクラスタを発生させ、該クラスタを熱分解することによって発生した活性種を前記基板上に沈着させることを特徴とする、ＣＶＤエピタキシャル成長方法。
JP2003320819A 2003-09-12 2003-09-12 Ｃｖｄエピタキシャル成長方法 Expired - Lifetime JP4396195B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003320819A JP4396195B2 (ja) 2003-09-12 2003-09-12 Ｃｖｄエピタキシャル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003320819A JP4396195B2 (ja) 2003-09-12 2003-09-12 Ｃｖｄエピタキシャル成長方法

Publications (3)

Publication Number Publication Date
JP2005093477A JP2005093477A (ja) 2005-04-07
JP2005093477A5 true JP2005093477A5 (ja) 2006-04-13
JP4396195B2 JP4396195B2 (ja) 2010-01-13

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ID=34452664

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JP2003320819A Expired - Lifetime JP4396195B2 (ja) 2003-09-12 2003-09-12 Ｃｖｄエピタキシャル成長方法

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JP (1) JP4396195B2 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2395133B1 (en) * 2009-01-30 2020-03-04 Showa Denko K.K. Method for producing epitaxial silicon carbide single crystal substrate
JP5865625B2 (ja) * 2011-08-05 2016-02-17 昭和電工株式会社 エピタキシャルウェハの製造装置及び製造方法
JP5933202B2 (ja) 2011-08-05 2016-06-08 昭和電工株式会社 エピタキシャルウェハの製造装置及び製造方法

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