JP2005091143A - Radiation image conversion panel and method for manufacturing it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the warpage and the inconsistencies of sensitivity in a radiation image conversion panel. <P>SOLUTION: Stimulable phosphors (CsBr:0.0002Eu) are filled as an evaporation material into a resistance heating crucible in an evaporation source 4, a support S is mounted on a support holder 5a and the distance between the support S and the evaporation source 4 is adjusted to 400 mm. After the inside of an evaporator 1 is evacuated for a short while, an Ar gas is introduced and the degree of vacuum is adjusted to 0.1 Pa, subsequently, the temperature of the support S is held at 100°C while rotating it at a speed of 10 rpm with a support rotation mechanism 5. Then, a stimulable phosphor layer is formed by heating the resistance heating crucible to evaporate the stimulable phosphors onto the support S and the evaporation is completed when the film thickness of the stimulable phosphor layer reaches about 500 μm. Subsequently, the stimulable phosphor layer is put into a protective layer bag in a dry air to obtain the radiation image conversion panel which has a structure where the stimulable phosphor layer is sealed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a radiation image conversion panel in which a photostimulable phosphor layer is formed on a support by a vapor deposition method and a method for manufacturing the radiation image conversion panel.

  In recent years, a radiographic image is captured using a captured image conversion panel in which a photostimulable phosphor is formed on a support. This is because the stimulable phosphor layer formed on the photographed image conversion panel absorbs the radiation that has passed through the subject at the time of photographing, and then the stimulable phosphor layer is irradiated with excitation light such as laser light. Radiation energy accumulated in the fluorescent layer is emitted as fluorescence, and this fluorescence is detected to form an image.

  As a method for forming a photostimulable phosphor layer in such a photographed image conversion panel, there is a method in which a binder is mixed with the photostimulable phosphor and coated on the support of the panel. Since the purity of the fluorescent material is lowered, the efficiency of the excitation light and the stimulated light emission is lowered, and the image quality such as the sharpness and graininess of the photographed image is lowered. Therefore, in order to improve the image quality of the photographed image, a method of forming a photostimulable phosphor layer by a vapor deposition method has been developed (see, for example, Patent Document 1). In this method, the photostimulable phosphor layer does not contain a binder and is composed only of the photostimulable phosphor. Therefore, the efficiency of excitation light entry and photostimulated emission is improved, and a high-quality image can be obtained.

With reference to FIG. 4, the conventional manufacturing method of the imaging | photography image conversion panel by a vapor deposition method is demonstrated.
In the vapor deposition method, a stimulable phosphor is deposited on a support by vapor deposition or sputtering. For example, in the case of vapor deposition, a vapor deposition apparatus 10 shown in FIG. 4 has been used. The vapor deposition apparatus 10 supports a vacuum vessel 12 provided with a vacuum pump 11, an evaporation source 13 and a support S in the vacuum vessel 12, and the support S in a horizontal direction with respect to the evaporation source 13 (see FIG. And a support conveying mechanism 14 that reciprocates in the direction indicated by the middle A). In addition, the vapor deposition apparatus 10 is provided with a slit plate 15 having a slit for restricting vapor deposition on the support S between the evaporation source 13 and the support S.

In the vapor deposition apparatus 10, the vapor of the stimulable phosphor that has passed through the slit 15 from the evaporation source 13 is vapor deposited on the support S while reciprocating the support S, so that the surface of the support S is substantially uniform. A photostimulable phosphor layer can be formed.
Japanese Patent Laid-Open No. 2002-214397

Since the photostimulable phosphor layer absorbs radiation and accumulates its energy, the thicker the photostimulable phosphor layer in the photostimulable phosphor layer, the higher the sensitivity and the photostimulable fluorescence. Sensitivity saturates at a certain film thickness that can release the energy of radiation stored in the body.
However, in the vapor deposition apparatus 10 having the above configuration, the vapor emitted from the evaporation source 13 by the slit 15 may be disturbed and enter the support S side, resulting in unevenness in the film thickness of the photostimulable phosphor layer. there were. For this reason, a high-sensitivity portion and a low-sensitivity portion are locally generated on the panel, resulting in sensitivity unevenness.

  On the other hand, the photostimulable phosphor layer made of CsBr or the like has a large expansion coefficient, and therefore stress is generated on the support. For this reason, if the film thickness varies depending on the direction, the stress cannot be balanced, and the panel having the photostimulable phosphor layer formed on the support is warped. In particular, when a support in which carbon fibers are arranged in one direction and a plurality of carbon fiber reinforced resin sheets impregnated with a heat-resistant resin is applied is applied along the direction of the carbon fibers in the support. The Rukoto. A warped panel is vulnerable to impact, and the photostimulable phosphor layer is often cracked. In addition, sensitivity unevenness may occur due to warpage.

  An object of the present invention is to reduce warpage and sensitivity unevenness in a radiation image conversion panel.

The invention described in claim 1
In a radiation image conversion panel having a phosphor layer formed by a vapor deposition method,
The film thickness distribution in the phosphor layer is ± 20% or less, and the film thickness distribution is isotropic.

The invention according to claim 2 is the radiation image conversion panel according to claim 1,
The film thickness distribution in the phosphor layer is ± 15% or less.

The invention according to claim 3 is the radiation image conversion panel according to claim 2,
The film thickness distribution in the phosphor layer is ± 10% or less.

The invention according to claim 4 is the radiation image conversion panel according to claim 3,
The film thickness distribution in the phosphor layer is characterized by being ± 5% or less.

The invention described in claim 5
In a radiation image conversion panel having a phosphor layer formed by a vapor deposition method,
The variation coefficient of the film thickness in the phosphor layer is 40% or less, and the film thickness is distributed with the same film thickness concentrically from the center of the phosphor layer.

The invention according to claim 6 is the radiation image conversion panel according to claim 5,
The variation coefficient of the film thickness in the phosphor layer is 30% or less.

The invention according to claim 7 is the radiation image conversion panel according to claim 6,
The variation coefficient of the film thickness in the phosphor layer is 20% or less.

The invention according to claim 8 is the radiation image conversion panel according to claim 7,
The variation coefficient of the film thickness in the phosphor layer is 10% or less.

The invention according to claim 9 is the radiation image conversion panel according to any one of claims 1 to 8,
The phosphor constituting the phosphor layer contains a stimulable phosphor based on an alkali halide represented by the following formula (1).
_{M1X · aM2X '2 · bM3X "} 3: eA ··· (1)
In the formula, M1 is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M2 is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and At least one divalent metal atom selected from each atom of Ni, and M3 is Sc, Y, La, Ce, Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, At least one trivalent metal atom selected from each atom of Lu, Al, Ga and In, and X, X ′ and X ″ are at least one halogen selected from each atom of F, Cl, Br and I A is an atom, and A is selected from each atom of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. At least one metal atom, and a, b, and e are numerical values in the ranges of 0 ≦ a <0.5, 0 ≦ b <0.5, and 0 <e <1.0, respectively.

The invention according to claim 10 is:
A method for manufacturing a radiation image conversion panel for manufacturing the radiation image conversion panel according to any one of claims 1 to 9,
A vacuum vessel, an evaporation source that is provided in the vacuum vessel and deposits the phosphor on the support, and a support rotating mechanism that supports the support and rotates the support relative to the evaporation source. A vapor deposition apparatus is used, and a phosphor layer is formed by vapor-depositing phosphors evaporated from the evaporation source on the support while rotating the support by the support rotating mechanism during vapor deposition.

  According to the first aspect of the present invention, the phosphor layer is configured such that the film thickness distribution in the phosphor layer is ± 20% or less, and the film thickness is distributed with the same film thickness concentrically from the center of the phosphor layer. Therefore, the film thickness can be made uniform to reduce sensitivity unevenness, and the stress generated on the panel can be offset by the formation of the phosphor layer, and the warpage of the panel can be reduced.

  According to the second aspect of the present invention, since the phosphor layer is configured so that the film thickness distribution in the phosphor layer is ± 20% or less, the film thickness is made more uniform to further reduce the sensitivity unevenness. Can do.

  According to the third aspect of the present invention, since the phosphor layer is configured so that the film thickness distribution in the phosphor layer is ± 15% or less, the film thickness is made more uniform to further reduce the sensitivity unevenness. Can do.

  According to the invention described in claim 4, since the phosphor layer is configured such that the film thickness distribution in the phosphor layer is ± 5% or less, the film thickness is further uniformed to significantly reduce the sensitivity unevenness. Can do.

  According to the fifth aspect of the present invention, the phosphor layer has a coefficient of variation of film thickness of 40% or less in the phosphor layer, and the phosphor layer is distributed with the same film thickness concentrically from the center of the phosphor layer. Since it is configured, the film thickness can be made uniform to reduce the sensitivity unevenness, and the stress generated on the panel can be offset by the formation of the phosphor layer, and the warpage of the panel can be reduced.

  According to the sixth aspect of the present invention, since the phosphor layer is configured so that the variation coefficient of the film thickness in the phosphor layer is 30% or less, the film thickness is made more uniform and the sensitivity unevenness is further reduced. be able to.

  According to the seventh aspect of the present invention, since the phosphor layer is configured so that the variation coefficient of the film thickness in the phosphor layer is 20% or less, the film thickness is made more uniform to further reduce sensitivity unevenness. be able to.

  According to the eighth aspect of the present invention, since the phosphor layer is configured so that the variation coefficient of the film thickness in the phosphor layer is 10% or less, the film thickness is further uniformed to significantly reduce the sensitivity unevenness. be able to.

According to the ninth aspect of the present invention, the stimulable phosphor represented by the general formula (1), M1X · aM2X ′ ₂ · bM3X ″ ₃ : eA, can be applied as a raw material of the phosphor layer.

  According to the invention described in claim 10, since the phosphor is deposited on the support while rotating the support, the film thickness of the phosphor layer is made uniform so that the film thickness of the phosphor becomes uniform. The phosphor layer can be formed on the support so as to be distributed with the same film thickness concentrically from the center. Accordingly, it is possible to manufacture a radiation image conversion panel with less sensitivity unevenness and less warpage by reducing the film thickness distribution or coefficient of variation in the phosphor layer and canceling the stress generated on the panel.

Hereinafter, the present invention will be described in detail.
FIG. 1 shows a radiation image conversion panel P to which the present invention is applied.
As shown in FIG. 1, the radiation image conversion panel P includes a support S, and a stimulable phosphor layer R in which columnar crystals of the stimulable phosphor are formed on the support S by a vapor deposition method. A protective layer (not shown) for protecting the photostimulable phosphor layer R is provided on the photostimulable phosphor layer R as necessary.

  The material of the support S can be arbitrarily selected from known materials as a support for a conventional radiation image conversion panel, but in the case of becoming a support for forming a phosphor layer by a vapor volume method. In addition, a metal sheet made of quartz glass, aluminum, iron, tin, chromium and the like and a carbon fiber reinforced resin sheet containing a heat resistant resin in a sheet in which carbon fibers are arranged in one direction are preferable.

  Further, the support S preferably has a resin layer Sa in order to make the surface smooth. The resin layer Sa contains a compound such as polyimide, polyethylene terephthalate, paraffin, graphite, and the film thickness is preferably about 5 μm to 50 μm. This resin layer may be provided on the front surface or the back surface of the support S, or may be provided on both surfaces.

  Furthermore, means for providing the resin layer Sa on the support S include means such as a bonding method and a coating method. Bonding is performed using heating and a pressure roller, and the heating condition is about 80 to 150 ° C., the pressure condition year is 4.90 × 10 to 2.94 × 102 (N / cm), the conveyance speed. Is preferably 0.1 to 2.0 (m / sec).

The photostimulable phosphor layer R according to the present invention preferably contains a photostimulable phosphor represented by the following general formula (1).
_{M1X · aM2X '2 · bM3X "} 3: eA ··· (1)
In the formula, M1 is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M2 is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and At least one divalent metal atom selected from each atom of Ni, and M3 is Sc, Y, La, Ce, Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, At least one trivalent metal atom selected from each atom of Lu, Al, Ga and In, and X, X ′ and X ″ are at least one halogen selected from each atom of F, Cl, Br and I A is an atom, and A is selected from each atom of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. At least one metal atom, and a, b, and e are numerical values in the ranges of 0 ≦ a <0.5, 0 ≦ b <0.5, and 0 <e <1.0, respectively.

  In the general formula (1), M1 is at least one alkaline earth metal atom selected from each atom of Li, Na, K, Rb, and Cs, and at least one selected from each atom of Rb and Cs. A seed atom is preferred, more preferably a Cs atom.

  M2 is at least one divalent metal atom selected from the atoms of Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu, and Ni. Among these, Be, Mg, An atom selected from Ca, Sr and Ba.

  M3 is at least one selected from Sc, Y, La, Ce, Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ga, and In atoms. Among the valent metal atoms, atoms preferably selected from Y, Ce, Sm, Eu, Al, La, Gd, Lu, Ga, and In are preferable.

  A is at least one selected from the atoms of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. Of these, the Eu atom is preferred.

From the viewpoint of improving the brightness of the photostimulated luminescence of the photostimulable phosphor, X, X ′ and X ″ are at least one halogen atom selected from F, Cl, Br and I atoms. And at least one atom selected from Br and Br are more preferable, and a Br atom is more preferable.

In the general formula (1), a, b and e are numerical values in the range of 0 ≦ a <0.5, 0 ≦ b <0.5 and 0 <e <1.0, respectively, preferably 0 ≦ b <10 ⁻² .

The photostimulable phosphor represented by the general formula (1) of the present invention is produced, for example, by the following method.
First, the following raw materials (a), (b), and (e) are prepared as phosphor raw materials.
Raw material (a): at least one compound selected from NaF, NaCl, NaBr, NaI, KF, KCl, KBr, KI, RbBr, RbI, CsF, CsCl, CsBr and CsI.

Material _{(b): MgF 2, MgCl} 2, MgBr 2, MgI 2, CaF 2, CaCl 2, CaBr 2, CaI 2, SrF 2, SrCl 2, SrBr 2, SrI 2, BaF 2, BaCl 2, BaBr 2, BaBr ₂ .2H ₂ O, BaI ₂ , ZnF ₂ , ZnCl ₂ , ZnBr ₂ , ZnI ₂ , CdF ₂ , CdCl ₂ , CdBr ₂ , CdI ₂ , CuF ₂ , CuCl ₂ , CuBr ₂ , CuI, NiF ₂ , NiCl ₂ , one or more compounds selected from the compounds of NiBr ₂ and NiI _2.

  Raw material (e): Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu and Mg. Containing compounds.

The phosphor materials of the raw materials (a), (b), and (e) are weighed so as to be in the numerical ranges of a, b, and e in the general formula (1), and are dissolved purely. At this time, the mixture may be sufficiently mixed using a mortar, a ball mill, a mixer mill or the like.
Next, a predetermined acid is added so that the pH value C of the obtained water vapor is adjusted to 0 <C <7, and then water is evaporated.

  Next, the raw material mixture obtained by evaporating moisture is filled in a heat-resistant container such as a quartz crucible or an alumina crucible and fired in an electric furnace. The firing temperature is preferably 500 to 1000 ° C. The firing time varies depending on the filling amount of the raw material mixture, the firing temperature and the like, but is preferably 0.5 to 6 hours. The firing atmosphere is a nitrogen gas atmosphere containing a small amount of hydrogen gas, a weak reducing atmosphere such as a carbon gas atmosphere containing a small amount of carbon monoxide, a neutral atmosphere such as a nitrogen gas atmosphere or an argon gas atmosphere, or a small amount of oxygen. A weak oxidizing atmosphere containing gas is preferred.

  After firing once under the above firing conditions, the fired product is taken out from the electric furnace and pulverized, and then the fired product powder is again filled in a heat-resistant container and placed in the electric furnace, under the same firing conditions as above. If re-firing, the desired stimulable phosphor can be obtained by taking out the luminous brightness of the stimulable phosphor from the electric furnace and releasing it in the air. You may cool in an atmosphere or neutral atmosphere.

  In addition, by moving the fired product from the heating unit to the cooling unit in an electric furnace and quenching in a weakly oxidizing atmosphere, it is possible to further increase the photostimulable luminance of the resulting photostimulable phosphor. .

  The photostimulable phosphor thus produced is vapor-deposited on the support S by a vapor deposition method to form the photostimulable phosphor layer R. As the vapor deposition method, an evaporation method, a sputtering method, a CVD (Chemical Vapor Deposition) method, an ion plating method, and other methods can be used. In the present invention, the evaporation method is particularly preferable.

Hereinafter, an example in which the photostimulable phosphor is deposited on the support S by a deposition method suitable for the present invention will be described.
The vapor deposition apparatus 1 shown in FIG. 2 is used for vapor deposition. As shown in FIG. 2, the vapor deposition apparatus 1 vapor-deposits vapor on a support S provided in the vacuum vessel 2, a vacuum pump 3 that exhausts the vacuum vessel 2 and introduces air into the vacuum vessel 2. An evaporation source 4 to be held, a support S, and a support rotating mechanism 5 that rotates the support S with respect to the evaporation source 4 are provided.

  The evaporation source 4 contains a stimulable phosphor and is heated by a resistance heating method. Therefore, the evaporation source 4 may be composed of an alumina crucible wound with a heater, or a boat or a heater made of a refractory metal. Also good. In addition to the resistance heating method, the stimulable phosphor may be heated by an electron beam or a high frequency induction. However, in the present invention, it is easy to handle with a relatively simple configuration. The resistance heating method is preferable because it can be applied to a large number of substances. The evaporation source 4 may be a molecular beam source by a molecular source epitaxial method.

  The support rotation mechanism 5 includes, for example, a support holder 5a for holding the support S, a rotation shaft 5b for rotating the support holder 5a, a drive source for the rotation shaft 5b disposed outside the vacuum vessel 2, and And a motor (not shown).

  The support holder 5a preferably includes a heater (not shown) for heating the support S. By heating the support S, the adsorbate on the surface of the support S is removed and removed, and an impurity layer is prevented from being generated between the surface of the support S and the stimulable phosphor layer R, and adhesion is improved. And the film quality of the photostimulable phosphor layer can be adjusted.

  Furthermore, a shutter (not shown) that blocks a space from the evaporation source 4 to the support S may be provided between the support S and the evaporation source 4. It is possible to prevent substances other than the target of vapor deposition attached to the surface of the photostimulable phosphor by the shutter from evaporating at the initial stage of vapor deposition and adhering to the support.

Next, a vapor deposition method using the vapor deposition apparatus 1 will be described.
First, the support body S is attached to the support body holder 5a. Next, the vacuum container 2 is evacuated. Thereafter, the support holder 5a is rotated with respect to the evaporation source by the support rotating mechanism 5, and when the degree of vacuum in the vacuum vessel 2 reaches a vacuum level at which vapor deposition is possible, the stimulable phosphor is heated from the heated evaporation source 4. Is evaporated, and the photostimulable phosphor is grown on the surface of the support S to a desired thickness. In this case, the distance between the support S and the evaporation source 4 is adjusted between 100 mm and 1500 mm.

  In the vapor deposition step, the photostimulable phosphor layer R can be formed in a plurality of times. Further, in the vapor deposition process, a plurality of resistance heaters or an electron beam may be co-deposited to synthesize the desired photostimulable phosphor on the support S and at the same time form a photostimulable phosphor layer. Is possible.

In the vapor deposition method, the vapor deposition target (support, protective layer or intermediate layer) may be cooled or heated as necessary during vapor deposition. Further, the stimulable phosphor layer may be heat-treated after the vapor deposition. In the vapor deposition method, reactive vapor deposition may be performed in which vapor deposition is performed by introducing a gas such as O ₂ or H ₂ as necessary.

  The film thickness of the photostimulable phosphor layer R to be formed varies depending on the intended use of the radiation image conversion panel and the type of stimulable phosphor, but is in the range of 50 μm to 2000 μm from the viewpoint of obtaining the effects of the present invention. The range is preferably 50 μm to 1000 μm, more preferably 100 μm to 800 μm.

  In forming the photostimulable phosphor layer R by the above vapor deposition method, the temperature of the support S on which the photostimulable phosphor layer R is formed is preferably set to room temperature (RT) to 300 ° C. More preferably, it is 50-200 degreeC.

  After forming the photostimulable phosphor layer R as described above, a protective layer may be provided so as to cover the photostimulable phosphor layer R as necessary. The protective layer may be formed by directly applying a coating solution for the protective layer to the surface of the photostimulable phosphor layer R, or by adhering a separately formed protective layer to the photostimulable phosphor layer. Also good.

  Materials for the protective layer include cellulose acetate, nitrocellulose, polymethyl methacrylate, polyvinyl butyral, polyvinyl formal, polycarbonate, polyester, polyethylene terephthalate, polyethylene, polyvinylidene chloride, nylon, polytetrafluoroethylene, polytrifluoride-chloride. Usual protective layer materials such as ethylene, tetrafluoroethylene-hexafluoropropylene copolymer, vinylidene chloride-vinyl chloride copolymer, vinylidene chloride-acrylonitrile copolymer are applicable. In addition, a transparent glass substrate can be used as the protective layer.

The protective layer may be formed by laminating inorganic substances such as SiC, SiO ₂ , SiN, Al ₂ O ₃ by vapor deposition, sputtering, or the like. The thickness of these protective layers is preferably 0.1 μm to 2000 μm.

EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated concretely, the embodiment of this invention is not limited to these.
(Create support)
A plurality of carbon fiber reinforced resin sheets were laminated and heated at 130 ° C., and a support S was obtained by applying a pressure of 100 (N / cm).

(Formation of photostimulable phosphor layer)
CsBr: 0.0002Eu was produced as a photostimulable phosphor, and this photostimulable phosphor was deposited on a support S to form a photostimulable phosphor layer R. Examples 1 to 5 shown below Radiation image conversion panels of Comparative Examples 1 and 2 were produced. In Examples 1-5, vapor deposition was performed using the vapor deposition apparatus 1 shown in FIG. 2, and in Comparative Examples 1 and 2, vapor deposition was performed using the vapor deposition apparatus 10 shown in FIG.

[Example 1]
First, the photostimulable phosphor (CsBr: 0.0002Eu) was filled in a resistance heating crucible in the evaporation source 4 as an evaporation material, and the support S was placed on the support holder 5a.
Next, the distance between the support S and the vapor deposition source 4 was adjusted to 300 mm.
Subsequently, the inside of the vapor deposition apparatus 1 is once evacuated, Ar gas is introduced and the degree of vacuum is adjusted to 0.1 Pa, and then the support S is rotated by the support rotating mechanism 5 at a speed of 10 rpm. Was maintained at 100 ° C. Next, the resistance heating crucible is heated to deposit the photostimulable phosphor on the support S to form the photostimulable phosphor layer. When the film thickness of the photostimulable phosphor layer becomes about 500 μm, the deposition is performed. Was terminated. Next, the stimulable phosphor layer was placed in a protective layer bag in dry air to obtain a radiation image conversion panel having a structure in which the stimulable phosphor layer was sealed.

[Example 2]
In the same manner as in Example 1, after the stimulable phosphor and the support S were installed, the distance between the support S and the evaporation source 4 was adjusted to 400 mm. Thereafter, a radiation image conversion panel was manufactured in the same manner as in Example 1.

[Example 3]
In the same manner as in Example 1, after the stimulable phosphor and the support S were installed, the distance between the support S and the evaporation source 4 was adjusted to 600 mm. Thereafter, a radiation image conversion panel was manufactured in the same manner as in Example 1.

[Example 4]
In the same manner as in Example 1, after the stimulable phosphor and the support S were installed, the distance between the support S and the evaporation source 4 was adjusted to 800 mm. Thereafter, a radiation image conversion panel was manufactured in the same manner as in Example 1.

[Example 5]
After the stimulable phosphor and the support S were installed in the same manner as in Example 1, the distance between the support S and the evaporation source 4 was adjusted to 1000 mm. Thereafter, a radiation image conversion panel was manufactured in the same manner as in Example 1.

[Comparative Example 1]
First, the stimulable phosphor (CsBr: 0.0002Eu) is used as a vapor deposition material, and the resistance heating crucible in the evaporation source 13 in the vapor deposition apparatus 10 (see FIG. 4) is filled, and the support S is placed on the support holder 14a. installed.
Next, the distance between the support S and the vapor deposition source 13 was adjusted to 400 mm.
Subsequently, after the inside of the vapor deposition apparatus 1 is once exhausted, Ar gas is introduced and the degree of vacuum is adjusted to 0.1 Pa, and then the support S is transported back and forth in the direction A by the support transport mechanism 14. Was maintained at 100 ° C. Next, the resistance heating crucible is heated to deposit the photostimulable phosphor on the support S to form the photostimulable phosphor layer. When the film thickness of the photostimulable phosphor layer becomes about 500 μm, the deposition is performed. Was terminated. Next, the stimulable phosphor layer was placed in a protective layer bag in dry air to obtain a radiation image conversion panel having a structure in which the stimulable phosphor layer was sealed.

[Comparative Example 2]
After the photostimulable phosphor and the support S were installed as in Comparative Example 1, the distance between the support S and the evaporation source 4 was adjusted to 1000 mm. Thereafter, a radiation image conversion panel was produced in the same manner as in Comparative Example 1.

  The following evaluations were performed on the radiation image conversion panels obtained in Examples 1 to 5 and Comparative Examples 1 and 2 as described above.

<< Thickness distribution characteristics >>
Regarding the film thickness distribution characteristics, the film thickness is measured at 30 measurement points arranged at equal intervals on the radiation image conversion panel, and the measurement points having the same film thickness are curves (this curve is referred to as an iso-thick line). To determine whether the film thickness distribution is isotropic or anisotropic. Here, that the film thickness distribution is isotropic means that the film thickness is substantially uniform at a position equidistant from the center of the panel, and there is no variation in film thickness depending on the direction. On the other hand, that the film thickness distribution is anisotropic means that the film thickness varies depending on the direction from the center of the panel.
For example, as shown in FIG. 3 (a), it is determined that the iso-thick line is isotropic when it extends concentrically (including a perfect circle and an ellipse) from the center of the panel. As shown in FIG. 3, if the iso-thickness lines are arranged in parallel in one direction, or if several iso-concentric contour lines are locally present as shown in FIG.

<Film thickness distribution>
The film thickness distribution is an index value indicating the degree of variation in the film thickness of the photostimulable phosphor in the photostimulable phosphor layer. The film thickness distribution was calculated by the following formula (2) by measuring the maximum film thickness D _Max and the minimum film thickness D _min in the photostimulable phosphor layer.

《Coefficient of variation》
The variation coefficient is an index value indicating the degree of variation in the film thickness of the photostimulable phosphor in the photostimulable phosphor layer, similarly to the film thickness distribution. The coefficient of variation was determined by measuring the film thickness of the photostimulable phosphor layer at 50 measurement points arranged at equal intervals on the radiation image conversion panel, and calculating the average film thickness D _av of the film thickness at each measurement point. _Was calculated by the following formula (3).

<Sensitivity unevenness>
The radiation image conversion panel is uniformly irradiated with radiation with a tube voltage of 80 kVp from the support side opposite to the stimulable phosphor, and then the radiation image conversion panel P is scanned with He-Ne laser light (wavelength 633 nm) and excited. did. Then, at 25 measurement points arranged at equal intervals on the radiation image conversion panel, the photostimulated luminescence emitted from the photostimulable phosphor layer is received by a photoreceiver (photoelectron image multiplier of spectral sensitivity S-5). Then, the maximum intensity K _Max , the minimum intensity K _min , and the average intensity K _av of each measurement intensity among the measurement intensities at each measurement point were obtained, and the sensitivity unevenness was calculated by the following formula (4).

<Relative sensitivity>
The relative sensitivity indicates a relative sensitivity with respect to the radiation image conversion panel of Comparative Example 1 on the basis of the brightness of the stimulated emission in the radiation image conversion panel of Comparative Example 1. As in the case of uneven sensitivity, the relative sensitivity was determined by measuring the intensity of the photostimulated luminescence emitted from the photostimulable phosphor layer of the radiation image conversion panel at 25 measurement points. brightness K _1, asking each average luminance K _n in each example 1-5 and Comparative example 2, was calculated by the following equation (5).

"warp"
The amount of warpage of the radiation image conversion panel is measured by measuring the upper two corners with a gap gauge when the radiation image conversion panel is leaned against a stainless steel plate with good straightness at an angle of 5 degrees. Two corners (that is, the remaining two corners) were measured with a gap gauge, and the maximum value was taken as the amount of warpage (mm).

《Shock resistance》
After dropping a 500 g iron ball from a radiation image conversion panel from a height of 20 cm, the state of cracking was visually evaluated according to the following evaluation criteria. Further, after irradiating the radiation image conversion panel with radiation having a tube voltage of 80 kVp, the panel is scanned and excited with He-Ne laser light (wavelength 633 nm), and the stimulated luminescence emitted from the phosphor layer is photoelectrically converted. It is converted into an electric signal (image signal) by the element. The converted image signal was displayed on the display means or printed out by the printing means, and the output image was visually evaluated according to the following evaluation criteria.

The evaluation criteria for impact resistance are as follows.
A: A uniform image with no cracks and no image unevenness.
○: There is no crack, and the image quality is hardly a concern.
(Triangle | delta): Although a crack is seen and a notch is confirmed, it exists in the range accept | permitted practically.
X: Cracks are observed, clear notches are recognized, and problems occur in practice.

The above evaluation results are shown in Table 1.

  As is clear from the results of Table 1, in the radiation image conversion panel (Examples 2 to 5) in which the distance between the support S and the evaporation source 4 was adjusted to 400 mm or more and vapor deposition was performed while rotating the support S. The film thickness distribution can be reduced to ± 20% or less. When the film thickness distribution is ± 20% or less, it can be said that the sensitivity unevenness is 20% or less, which is halved compared to Comparative Examples 1 and 2, and the image quality can be improved. Similarly, in the radiation image conversion panels of Examples 1 to 5, the variation coefficient can be reduced to 40% or less, and the sensitivity unevenness can be significantly reduced to 30% or less.

  In addition, as the film thickness distribution becomes lower than ± 20%, ± 15% or lower, ± 10% or lower, and ± 5% or lower, the sensitivity unevenness is reduced and the relative sensitivity is improved. In Example 5, which is less than ± 5%, the sensitivity unevenness is remarkably reduced, and the relative sensitivity is the highest value in each Example. Similarly, it can be seen that as the coefficient of variation decreases to 40% or less, 30% or less, 20% or less, and 10% or less, the sensitivity unevenness is reduced and the relative sensitivity is improved.

  On the other hand, each of Examples 1 to 5 in which deposition was performed while rotating the support S had an isotropic film thickness distribution characteristic, and warpage was 1.0 mm or less, and Comparative Examples 1 and 2. Compared to extremely small. Moreover, in Examples 1-5 which are isotropic about impact resistance, a crack is hardly seen, and it can be said that favorable image quality is also realizable in Examples 4 and 5 with especially small film thickness distribution. Compared with this, in Comparative Examples 1 and 2, even in Comparative Example 2 having isotropic properties, cracks are seen, and the evaluation of impact resistance is low.

It is a figure which shows the radiographic image conversion panel in this Embodiment. It is sectional drawing which shows schematic structure of the vapor deposition apparatus which concerns on this invention. (A) It is a figure which shows the example whose film thickness distribution characteristic is isotropic. (B), (c) It is a figure which shows the example whose film thickness distribution characteristic is anisotropic. It is sectional drawing which shows schematic structure of the conventional vapor deposition apparatus.

Explanation of symbols

P radiation image conversion panel R photostimulable phosphor layer S support 1 vapor deposition device 2 vacuum vessel 3 vacuum pump 4 evaporation source 5 support rotating mechanism 5a support holder 5b rotating shaft

Claims (10)

In a radiation image conversion panel having a phosphor layer formed by a vapor deposition method,
A radiation image conversion panel characterized in that the film thickness distribution in the phosphor layer is ± 20% or less and the film thickness distribution is isotropic.   The radiation image conversion panel according to claim 1, wherein a film thickness distribution in the phosphor layer is ± 15% or less.   The radiation image conversion panel according to claim 2, wherein a film thickness distribution in the phosphor layer is ± 10% or less.   The radiation image conversion panel according to claim 3, wherein the film thickness distribution in the phosphor layer is ± 5% or less. In a radiation image conversion panel having a phosphor layer formed by a vapor deposition method,
A radiation image conversion panel characterized in that the variation coefficient of the film thickness in the phosphor layer is 40% or less and the film thickness distribution is isotropic.   6. The radiation image conversion panel according to claim 5, wherein the variation coefficient of the film thickness in the phosphor layer is 30% or less.   The radiation image conversion panel according to claim 6, wherein the coefficient of variation of the film thickness in the phosphor layer is 20% or less.   The radiation image conversion panel according to claim 7, wherein a variation coefficient of a film thickness in the phosphor layer is 10% or less. The phosphor constituting the phosphor layer contains a stimulable phosphor based on an alkali halide represented by the following formula (1), according to any one of claims 1 to 8. Radiation image conversion panel.
_{M1X · aM2X '2 · bM3X "} 3: eA ··· (1)
In the formula, M1 is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M2 is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and At least one divalent metal atom selected from each atom of Ni, and M3 is Sc, Y, La, Ce, Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, At least one trivalent metal atom selected from each atom of Lu, Al, Ga and In, and X, X ′ and X ″ are at least one halogen selected from each atom of F, Cl, Br and I A is an atom, and A is selected from each atom of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. At least one metal atom, and a, b, and e are numerical values in the ranges of 0 ≦ a <0.5, 0 ≦ b <0.5, and 0 <e <1.0, respectively. A method for manufacturing a radiation image conversion panel for manufacturing the radiation image conversion panel according to any one of claims 1 to 9,
A vacuum vessel, an evaporation source that is provided in the vacuum vessel and deposits the phosphor on the support, and a support rotating mechanism that supports the support and rotates the support relative to the evaporation source. A radiation image characterized in that a phosphor layer is formed by vapor-depositing a phosphor evaporated from the evaporation source on a support while rotating the support by the support rotating mechanism during vapor deposition using a vapor deposition apparatus. A method for manufacturing a conversion panel.

Images