JP2005084249A - Electrooptical device, method for manufacturing electrooptical device, and electronic appliance - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrooptical device which realizes display characteristics of high picture quality and definition, and to provide a method for manufacturing the electrooptical device and an electronic appliance equipped with the electrooptical device. <P>SOLUTION: A plurality of pixel electrodes 9, and switching elements 4 respectively arranged corresponding to the plurality of pixel electrodes 9 are formed in the electrooptical device. The electrooptical device is provided with a first wire 13 to supply a signal to the switching element 4, a wiring part formed by extending the first wire 13 and disposed on a peripheral part of a display region, a reflective display region 31 in the display region of the pixel electrode 9, and a reflection film formed in the reflective display region 31 and having resistance lower than that of the first wire 13. The wiring part is constructed by laminating the reflection film on the first wire 13. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an electro-optical device, a method for manufacturing the electro-optical device, and an electronic apparatus.

  2. Description of the Related Art Conventionally, in a TFD active matrix driving type electro-optical device, a thin film diode (hereinafter referred to as TFD as appropriate) for switching driving a pixel electrode provided in each pixel is an area adjacent to each pixel electrode on a TFD array substrate. Placed in. Here, in each TFD, a wiring using Cr (chromium) or the like is formed, and a lower electrode using a metal film such as Ta (tantalum) is formed, and an insulating film made of Ta oxide is formed on the Ta. In addition, an upper electrode is formed from a metal film such as Cr on the substrate, thereby forming an MIM (Metal-Insulator-Metal) structure. Furthermore, the upper electrode and the pixel electrode are connected, and a drive voltage is supplied to the pixel electrode. On the other hand, in the TFD formed in this way, each pixel electrode is arranged in an opening area of each pixel (that is, an area where light contributing to display in each pixel is emitted by transmission or reflection). It is separately formed by a transparent conductive film such as ITO.

In particular, in the case of a transflective electro-optical device, a backlight is placed on the back side of the TFD array substrate, and openings such as slits and fine holes for transmitting light source light from the backlight are provided in the pixel electrode. It is done. In reflective display, reflective light is displayed by reflecting external light incident from the opposite substrate side at a portion excluding the opening of the pixel electrode. In transmissive display, light source light from the backlight is supplied to the pixel electrode. It is configured to perform transmissive display by emitting light from the counter substrate side through the opening (for example, see Patent Document 1).
JP 2001-083504 A

However, recently, an electro-optical device having so-called high definition and high image quality display characteristics has been demanded. When Cr is used as the wiring and Ta is used as the switching drive element as described above, there is a problem that it is difficult to display a high-quality moving image because the wiring resistance of Cr becomes a barrier.
Furthermore, in order to achieve a high-definition display, it is necessary to set a narrow pitch between adjacent pixels. However, a short circuit between lines due to contamination of foreign matter, ion migration due to a discharge field between wirings in a high temperature and high humidity environment, etc. There is a problem.

  The present invention has been made in view of the above-described problems, and provides an electro-optical device and a method for manufacturing the electro-optical device that can realize high-quality and high-definition display characteristics, and further includes the electro-optical device. The purpose is to provide electronic equipment.

In order to achieve the above object, the present invention employs the following configuration.
The electro-optical device of the present invention is an electro-optical device in which a plurality of pixel electrodes and a switching element provided corresponding to each of the plurality of pixel electrodes are formed, and a signal is supplied to the switching element. 1 wiring, the wiring formed in the periphery of the display area, and the display area of the pixel electrode includes a reflective display area, and is formed in the reflective display area. And a reflective film having a resistance lower than that of the first wiring, and the wiring portion is formed by laminating the reflective film on the first wiring.
Here, in the plurality of pixel electrodes, it is preferable that a display area including a reflective display area and a transmissive display area is provided in each dot area of the pixel electrode, and a transflective display is possible. The electro-optical device is preferable.
Further, it is preferable that the reflective film laminated on the first wiring is in a non-conductive state with the reflective film in the reflective display region.
The pixel electrode is provided so as to cover the transmissive display area and the reflective display area for each dot area, and it is preferable to use a transparent metal material such as ITO.
The first wiring is a metal that is excellent in corrosiveness against chemicals and the like and is chemically stable, and is made of a material that does not cause battery corrosion even when connected to a pixel electrode such as ITO. Yes, Cr or the like is preferably employed as the material. However, when measures are taken such as battery corrosion and chemical resistance ensuring at the wiring portion, options for the material are expanded and Mo or the like can be adopted.
The reflective film is a film having a function of reflecting natural light or the like in the reflective display region, and is formed of, for example, Al.

  Therefore, according to the present invention, the wiring portion has a laminated structure of Cr, which is the material of the first wiring, and Al, which is the material of the reflective film. Can be achieved.

The electro-optical device of the present invention is the electro-optical device described above, wherein the first wiring is made of Cr, Mo, a Cr alloy containing Cr as a main component, or a Mo alloy containing Mo as a main component. It is the single layer film | membrane which becomes.
Therefore, according to the present invention, since the Cr-based material is employed as the first wiring, the wiring is excellent in corrosiveness against chemicals and is chemically stable. Furthermore, when connected to a pixel electrode made of ITO or the like, battery corrosion can be suppressed. Alternatively, it is possible to adopt Mo-based materials by taking measures such as battery corrosion at the wiring portion and ensuring chemical resistance.

The electro-optical device according to the aspect of the invention is the electro-optical device described above, further including a second wiring that connects the switching element and the pixel electrode, and a resin film formed in the reflective display region. And the second wiring is covered with the resin film.
Here, the resin film preferably covers the switching element together with the second wiring.
In this case, since the resin film and the switching element are covered with the resin film, the second wiring and the switching element can surely obtain electrical insulation with respect to the reflective film.

The electro-optical device according to the aspect of the invention is the electro-optical device described above, further including an overcoat film formed in the reflective display region, and the overcoat film is used as a passivation film for the wiring portion. It has a function.
Here, the overcoat film is a so-called protective film disposed in the upper layer of the reflective film, and has a function of electrically insulating the pixel electrode and the reflective film.
Therefore, according to the present invention, the passivation film can be formed by the same process as the process of forming the overcoat film in the reflective display region, so that the process can be simplified.
Further, by forming the passivation film, it is possible to protect the Al material in the wiring part. Here, by selecting the type of the passivation film, it is possible to protect against various types of metals other than Al against corrosion.

  According to another aspect of the invention, there is provided a method for manufacturing an electro-optical device, in which a plurality of pixel electrodes and switching elements provided corresponding to the plurality of pixel electrodes are formed. Forming a first wiring for supplying a signal to the switching element; and forming a reflective film having a reflective display area in the reflective display area and having a lower resistance than the first wiring in the reflective display area. And a wiring portion is formed by extending the first wiring around the display area and laminating the reflective film on the first wiring.

  Therefore, according to the present invention, the wiring portion has a laminated structure of the first wiring material that is Cr-based material or Mo-based material and Al that is the material of the metal reflective film. The resistance of the wiring can be reduced as compared with the structure of the single Cr layer.

According to another aspect of the invention, there is provided an electronic apparatus including the electro-optical device described above.
Here, as an electronic device, information processing apparatuses, such as a mobile telephone, a mobile information terminal, a clock, a word processor, a personal computer, etc. can be illustrated, for example.
Therefore, according to the present invention, since the display unit using the above-described electro-optical device is provided, the electronic device can achieve low resistance and display characteristics are not deteriorated.

  Next, embodiments according to the present invention will be described with reference to the drawings. In addition, in each figure, in order to make each layer and each member into a size that can be recognized on the drawing, the scale is varied for each layer and each member.

[Electro-optical device]
FIG. 1 is a plan view of a liquid crystal display device, which is an embodiment of the electro-optical device of the present invention, viewed from the counter substrate side shown together with each component, and FIG. 2 is taken along line HH ′ in FIG. It is sectional drawing. FIG. 3 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the liquid crystal display device.
Here, as will be described later, the electro-optical device according to the present embodiment is a transflective type including a reflective display region and a transmissive display region for each dot, and a TFD (Thin Film Diode) element (two) as a switching element. The present invention is not limited to this embodiment, but the present invention is not limited to this embodiment, and electro-optics using a reflective display device, a TFT (Thin Film Transistor) or the like as a switching element It can also be applied to devices. The present invention may also be applied to an EL (Electro Luminescence) device, an electron-emitting device (Field Emission Display, Surface-Conduction Electron-Emitter Display), and the like as an electro-optical device.

  As shown in FIG. 1 and FIG. 2, in the liquid crystal display device 100 of the present embodiment, the element substrate 10 and the counter substrate 20 are bonded together by a sealing material 52, and the liquid crystal 50 is in a region partitioned by the sealing material 52. Enclosed and retained. The sealing material 52 is formed with a liquid crystal injection port 55 for injecting liquid crystal after the element substrate 10 and the counter substrate 20 are bonded to each other at the time of manufacture. 54 is sealed. A counter electrode 23 is formed on the inner surface side of the counter substrate 20, and a pixel electrode 9 is formed on the inner surface side of the element substrate 10.

An image display area (display area) DSP is formed in the area inside the sealing material 52, while the data signal driving circuit 12, the mounting terminal (external connection terminal) 18, and the area outside the sealing material 52 are formed. A wiring portion 205 a that connects the data signal driving circuit 12 and the mounting terminal 18 is formed along one side of the element substrate 10. A scanning signal drive circuit 11 is formed along two sides adjacent to the one side. On the remaining side of the element substrate 10, a wiring portion 205b including a plurality of wirings for connecting the scanning signal driving circuits 11 provided on both sides of the image display area DSP is provided.
Further, a passivation film 206 is formed on the wiring portions 205a and 205b so that electrical insulation is obtained.
Further, at least one corner of the counter substrate 20 is provided with an inter-substrate conductive material 207 for establishing electrical continuity between the element substrate 10 and the counter substrate 20.

In the liquid crystal display device 100, depending on the type of the liquid crystal 50 to be used, that is, depending on the operation mode such as TN (Twisted Nematic) mode, STN (Super Twisted Nematic) mode, and normally white mode / normally black mode. A retardation plate, a polarizing plate and the like are arranged in a predetermined direction, but are not shown here. Further, when the liquid crystal display device 100 is configured for color display, for example, red (R), green (G), and blue (B) are formed in a region of the counter substrate 20 facing each pixel electrode 9 of the element substrate 10. The color filter is formed together with the protective film.
Here, the color filter is preferably formed on the counter substrate 20 side. When the color filter is formed on the element substrate 10 side, it is necessary to perform a heat treatment step (200 ° C. or higher) for forming the color filter on the element substrate 10, and the heat sagging of the resin material formed on the element substrate 10 is required. However, since the color filter is formed on the counter substrate 20 side, the thermal load on the resin material can be reduced.

  In the liquid crystal display device 100 of the present embodiment, one pixel is configured by three dots of R, G, and B, and a transmissive display region (described later) and a reflection are provided on the element substrate 10 side corresponding to each dot region. A display area (described later) is provided.

  In the image display area DSP of the liquid crystal display device 100 having such a structure, as shown in FIG. 3, a plurality of pixels 15 are configured in a matrix. As shown in FIG. 3, the liquid crystal display device 100 includes a scanning signal driving circuit 11 and a data signal driving circuit 12, and includes a plurality of scanning lines 14 and a plurality of data lines (first data lines crossing the scanning lines 14). 1) 13, the scanning line 14 is driven by the scanning signal driving circuit 11, and the data line 13 is driven by the data signal driving circuit 12. In each pixel 15, the TFD element 4 and the liquid crystal display element 16 (liquid crystal layer) are connected in series between the scanning line 14 and the data line 13. In FIG. 3, the TFD element 4 is connected to the data line 13 side and the liquid crystal display element 16 is connected to the scanning line 14 side. On the contrary, the TFD element 4 is connected to the scanning line 14 side and the liquid crystal display element 16 is connected to the scanning line 14 side. The display element 16 may be provided on the data line 13 side.

  With the circuit configuration as described above, the liquid crystal display element 16 is driven and controlled based on the switching characteristics of the TFD element 4, and light and dark are displayed for each pixel 15 based on the driving of the liquid crystal display element 16. Image display is performed in 100 display areas DSP. In this embodiment, the MIM type TFD element 4 is disposed for each dot, and a reflective display area and a transmissive display area are provided. Hereinafter, the configuration of the element substrate 10 including the TFD element 4 will be described in detail.

[Element substrate]
Next, the element substrate 10 employed in the liquid crystal display device 100 will be described in detail with reference to FIGS.
FIG. 4 shows a planar structure per dot in the element substrate 10, and is a diagram for explaining a structure including the TFD element 4, the pixel electrode 9, and a mounting terminal (external connection terminal) 18. FIG. 4 is a sectional view taken along line AA ′ in FIG. 4, FIG. 6 is a sectional view taken along line BB ′ in FIG. 4, FIG. 7 is an enlarged sectional view showing the TFD element, and connection between the TFD element and the pixel electrode. FIG. 8 is a cross-sectional view of the lead wiring of the data line 13 (cross-sectional view of the wiring portions 205a and 205b shown in FIG. 1), and FIG. 9 is a cross-sectional view taken along the line CC ′ of FIG. It is.

As shown in FIG. 4, the TFD element 4 of the present embodiment has a so-called back-to-back structure, and a data line 13 formed of Cr and a pixel electrode 9 formed of a transparent conductive film They are connected via the TFD element 4. The data line 13 is connected to the mounting terminal (external connection terminal) 18 in the outer region (non-display region) of the sealing material 52, and can input / output various data.
Here, in the present invention, an Al—Nd wiring 42 made of an Al—Nd (neodymium) alloy is laminated so as to cover the data line 13 in the outer region (wiring portion to be described later) of the sealing material 52. It has the largest feature point. The Al—Nd wiring 42 is formed in the same process as the metal reflection film 33 described later, and is in a non-conductive state with the metal reflection film 33.
In addition to Cr, it is preferable to employ Mo, a Cr alloy containing Cr as a main component, or a Mo alloy containing Mo as a main component as the data line material.

  In the element substrate 10, a transmissive display area 30 and a reflective display area 31 are formed for each dot, and the transmissive display area 30 and the reflective display area 31 are covered with the pixel electrode 9. Yes. Further, in the connection portion 32 (see FIG. 7) formed in a part of the transmissive display region 30, the metal wiring (second wiring) 35 extended to the TFD element 4 and the pixel electrode 9 are connected. The drive voltage supplied from the data line 13 to the TFD element 4 is supplied to the pixel electrode 9 through the metal wiring 35. Here, the metal wiring 35 is formed of a single layer of Cr, and the metal wiring 35 is covered with a resin scattering film (resin film) 34, which is a feature of the present invention.

  The element substrate 10 is made of, for example, a glass substrate, a plastic substrate, or the like having insulation and transparency. Further, the TFD element 4 has a configuration in which an insulating film is sandwiched between Ta and Cr as will be described in detail later. The pixel electrode 9 is made of a transparent conductive film such as indium tin oxide (hereinafter abbreviated as ITO). The pixel electrode may be made of a material containing zinc (Zn) in addition to ITO, for example, indium oxide / zinc oxide amorphous transparent conductive film (Indium Zinc Oxide: IZO). (Registered trademark)) (made by Idemitsu Kosan Co., Ltd.) may be adopted.

As shown in FIG. 5, the cross-sectional structures of the transmissive display area 30 and the reflective display area 31 are both covered with the pixel electrode 9. The transmissive display region 30 is disposed in contact with the element substrate 10 and can transmit light from a light source such as a backlight. The reflective display region 31 has a configuration in which an overcoat film 17, a metal reflective film (reflective film) 33, and a resin scattering film 34 are laminated between the pixel electrode 9 and the element substrate 10. Natural light or the like incident from the display surface side is reflected by the metal reflecting film 33 and the reflected light is scattered by the resin scattering film 34.
In the laminated structure of the resin scattering film 34, the metal reflection film 33, and the overcoat film 17, it is preferable that the reflective display region 31 is formed while maintaining good display characteristics such as light scattering and transmittance. .

Here, the resin scattering film 34 has a concavo-convex shape and is provided with a natural light scattering function by irradiating the reflection film formed along the concavo-convex shape with natural light.
Moreover, Al etc. are employ | adopted as a material of the metal reflective film 33, and Al-Nd (neodymium) alloy is employ | adopted in this embodiment. By providing the resin scattering film 34 and the metal reflection film 33, it is possible to provide a display device having a large viewing angle with respect to the display surface, that is, a so-called wide viewing angle display device.
The overcoat film 17 is a so-called protective film disposed on the upper layer of the reflective film, and has a function of electrically insulating the pixel electrode and the reflective film. As the material of the overcoat film 17, a transparent resin material is preferably employed.

  Further, as shown in FIG. 6, the TFD element 4 is covered with the laminated film of the reflective display region 31. As described above, the TFD element 4 is covered with the resin scattering film 34 and kept in a non-conductive state with the metal reflection film 33.

Next, the structure of the TFD element 4 will be described in detail with reference to FIG.
The TFD element 4 is formed on the element substrate 10 via the base insulating film 3. The specific configuration of the TFD element 4 includes a first conductive film 6 made of Ta, an insulating film 7 made of Ta ₂ O ₅ formed by oxidizing the surface of the conductive film 6, and an insulating film 7 And a second conductive film 8 made of Cr formed on the surface.

Since such a TFD element is disposed in the reflective display region 31 as described above, the scattering resin film 34, the metal reflective film 33, and the overcoat film 17 are formed on the second conductive film 8. Has been. Further, the metal wiring 35 formed to extend to the second conductive film 8 and the pixel electrode 9 are connected via a connection portion 32 in the transmissive display region 30.
As described above, the second conductive film 8 is formed in a predetermined pattern for each pixel, and is formed in a matrix by patterning using, for example, wet etching. The overcoat film 17 is formed so as to cover the second conductive film 8 and the data line 13 made of Cr, and the second conductive film 8 and the data line are formed from an etchant solution during wet etching. 13 has a function as a protective film for protecting 13.

As shown in FIG. 8, in the wiring portions 205 a and 205 b configured by the routing wiring of the data line 13, the insulating film 40, the Cr wiring 41, the Al—Nd wiring 42, and the passivation film 206 are stacked. Yes.
Specifically, the insulating film 40 is formed of Ta ₂ O ₅ in the same process of forming the insulating film 7, and the Cr wiring 41 is formed of the same process of forming the second conductive film 8. The Al—Nd wiring 42 is formed in the same process for forming the metal reflective film 33, and the passivation film 206 is formed in the same process for forming the overcoat film 17.
Here, the feature of the present invention is that the passivation film 206 is formed so as to cover the Al—Nd wiring 42.

  Further, as shown in FIGS. 4 and 9, the data line 13 extends from the display region to the non-display region beyond the seal material 52, and in the non-display region, on the second conductive film 8 and the data line 13. The formed passivation film 206 is connected to the mounting terminal (external connection terminal) 18 through the contact hole 17b. The mounting terminal (external connection terminal) 18 is formed in the same process as the pixel electrode 9 described above, and is made of a transparent conductive film such as ITO. Also in this case, the overcoat film 17 functions as a protective film that protects the data line 13 from an etchant solution when the mounting terminal (external connection terminal) 18 is patterned. The overcoat film 17 is protected from the etchant solution if it is formed on the second conductive film 8 and the data line 13 at least in a region where the pixel electrode 9 and the mounting terminal (external connection terminal) 18 are not formed. A function can be realized.

  In the electro-optical device configured as described above, the wiring portions 205a and 205b extending to the data line 13 have a laminated structure of Cr and Al—Nd, and therefore, rather than a Cr single layer structure. The resistance of the wiring can be reduced.

In addition, since the metal wiring 35 is covered with the resin scattering film 34, electrical insulation between the metal reflective film 33 and the metal wiring 35 can be ensured reliably.
In addition, since the TFD element 4 and the metal wiring 35 are covered with the resin scattering film 34, electrical insulation between the metal reflection film 33 and the TFD element 4 and the metal wiring 35 can be reliably ensured.

Further, since Cr is used as the material of the metal wiring 35, the wiring is excellent in corrosiveness against chemicals and the like and is chemically stable. Furthermore, when connected to a pixel electrode made of ITO or the like, battery corrosion can be suppressed.
In addition to Cr, the same effect can be obtained by adopting Cr-based material or Mo-based material.

  In addition, since the TFD element 4 is covered with the resin scattering film 34 and held in a non-conductive state with the metal reflection film 33, the electrical insulation between the metal reflection film 33 and the switching element 34 is reliably ensured. be able to.

  Since the overcoat film 17 functions as the passivation film 206 of the wiring portions 205a and 205b, the passivation film 206 can be formed by the same process as the process of forming the overcoat film 17. Simplification of the process can be achieved. In addition, by forming a passivation film, it is possible to protect a material that is vulnerable to corrosion (poor corrosion resistance).

[Method of manufacturing electro-optical device]
Next, a method for manufacturing an electro-optical device including the above-described element substrate 10 will be described with reference to FIGS.

[Method for Manufacturing TFD Element]
First, a method for forming a TFD element on the element substrate 10 will be described.
As shown in FIG. 7, the base insulating film 3 is formed on the entire surface of the substrate 10 made of glass or plastic. Further, a Ta conductive film made of Ta or Ta alloy is formed on the entire surface. Then, the Ta conductive film is patterned by wet etching to obtain a first conductive film 6 having a predetermined shape.

Subsequently, the first conductive film 6 is anodized to form an insulating film 7 composed mainly of Ta ₂ O ₅ on the surface of the first conductive film 6. Specifically, one end of the first conductive film 6 is connected to a power source, and a constant current method is performed up to a predetermined voltage in an aqueous solution such as citric acid. Done.

Next, a conductive film made of Cr is formed on the entire surface of the base material 10 on which the first conductive film 6 having the insulating film 7 on the surface and the data lines 13 are formed. Then, the conductive film is patterned by wet etching to obtain a second conductive film 8 having a predetermined shape. Thus, by forming the first conductive film 6, the insulating film 7, and the second conductive film 8, the MIM type TFD element 4 is formed.
Further, in the step of forming the second conductive film 8, the metal wiring 35 is simultaneously formed in order to connect the TFD element 4 and a pixel electrode 9 described later.
In addition, the insulating film 40 and the Cr wiring 41 in the wiring portions 205a and 205b are formed by the same process of forming the insulating film 7 and the second conductive film 8, respectively.

[Method of manufacturing transmissive display area and reflective display area]
Next, the resin scattering film 34 is formed in the reflective display region 31 so as to cover the TFD element 4 by using a spin coating process, a photolithography process, a baking process, and the like. In this step, the resin scattering film 34 is not formed on the lead wiring portions 205a and 205b.
By covering the TFD element 4 with the resin scattering film 34 in this way, it becomes possible to protect the TFD element 4 from being subjected to subsequent process damage as much as possible.

Next, a metal reflective film 33 made of Al—Nd is formed on the resin scattering film 34 in the reflective display region 31 by using a sputtering process, a photolithography process, an etching process, and the like. Here, in the step of forming the metal reflective film 33, the Al—Nd wiring 42 is also laminated on the Cr wiring 41 in the routing wiring portions 205a and 205b.
By forming the metal reflective film 33 on the resin scattering film 34 in this way, the reflective display region 31 having a light scattering / reflecting function can be formed.
Further, an Al—Nd wiring 42 is formed on the Cr wiring 41 in the wiring portions 205a and 205b. Thereby, electrical contact between the Cr wiring 41 and the Al—Nd wiring 42 can be easily obtained, so that the resistance in the wiring portions 205a and 205b is reduced.

Further, the overcoat film 17 is formed so as to cover the resin scattering film 34 and the metal reflection film 33. However, it is assumed that the overcoat film 17 is not formed in the transmissive display region 30, and the total thickness of the film thickness of the resin scattering film 34 + the film thickness of the metal reflection film 33 + the film thickness of the overcoat film 17 is a reflection display. The film thickness is controlled so as to correspond to the film thickness difference calculated from the maximum contrast at the time and the maximum contrast at the transmissive display.
Here, it is preferable to form the overcoat film 17 on the metal reflection film 33 to keep the metal reflection film 33 in an electrically floating state.
Further, the passivation film 206 is formed by forming the overcoat film 17 on the Al—Nd wiring 42 in the wiring portions 205 a and 205 b.

Next, after the overcoat film 17 is formed, the ITO pattern of the pixel electrode 9 and the wiring outside the panel seal is formed by a sputtering process, a photolithography process, an etching process, and the like.
Here, at the connection portion 32 in the transmissive display region 30, the metal wiring 35 and the pixel electrode 9 are electrically connected, and the TFD element 4 and the pixel electrode 4 become conductive.

Through the above process, an electro-optical device including the element substrate 10 including the TFD element 4 is manufactured. In the electro-optical device according to the present embodiment, the wiring portions 205a and 205b extending to the data line 13 have a laminated structure of Cr and Al—Nd as described above. Also, the resistance of the wiring can be reduced.
Since the Al—Nd wiring 42 and the metal reflective film 33 are made of the same material, the process can be simplified by forming both in the same process.

[Electronics]
Next, specific examples of the electronic apparatus including the liquid crystal display device according to the above embodiment of the present invention will be described.
FIG. 9 is a perspective view showing an example of a mobile phone. In FIG. 9, reference numeral 500 denotes a mobile phone body, and reference numeral 501 denotes a display unit using the liquid crystal display device. Since such an electronic device includes the display unit using the liquid crystal display device of the above-described embodiment, the electronic device has a maximum effective pixel area without deteriorating display characteristics.
In addition, the electronic device is not limited to a mobile phone, but an electronic book, a personal computer, a digital still camera, a liquid crystal television, a viewfinder type or a direct view type video tape recorder, a car navigation device, a pager, an electronic notebook, a calculator, It can be suitably used as an image display means for a word processor, a workstation, a videophone, a POS terminal, a device equipped with a touch panel, etc. In any electronic device, a bright, high-contrast display with a wide viewing angle is possible. It is possible.

1 is a plan view showing a liquid crystal display device as one embodiment of an electro-optical device of the invention. Sectional drawing which follows the HH 'line | wire of FIG. FIG. 2 is a diagram showing an equivalent circuit of the liquid crystal display device of FIG. 1. 3 is a diagram showing a planar structure per dot in the element substrate 10. FIG. Sectional drawing which follows the AA 'line of FIG. Sectional drawing which follows the BB 'line | wire of FIG. The cross-sectional enlarged view which shows the connection part of the TFD element and the said TFD element, and a pixel electrode. Sectional drawing of data line routing wiring. Sectional drawing which follows the C-C 'line of FIG. FIG. 11 is a perspective view illustrating an embodiment of an electronic apparatus according to the invention.

Explanation of symbols

4 ... TFD element (switching element)
9: Pixel electrode 13: Data line (first wiring)
17 ... Overcoat film 30 ... Transmission display area 31 ... Reflection display area 33 ... Metal reflection film (reflection film)
34 ... Resin scattering film (resin film)
35 ... Metal wiring (second wiring)
100 ... Liquid crystal display device (electro-optical device)
205a, 205b ... wiring part 206 ... passivation film 500 ... mobile phone (electronic device)

Claims (6)

An electro-optical device in which a plurality of pixel electrodes and a switching element provided corresponding to each of the plurality of pixel electrodes are formed,
A first wiring for supplying a signal to the switching element;
A wiring portion formed by extending the first wiring and disposed in a peripheral portion of the display area;
The display area of the pixel electrode includes a reflective display area, a reflective film formed in the reflective display area and having a lower resistance than the first wiring,
Comprising
The electro-optical device, wherein the wiring portion is configured by laminating the reflective film on the first wiring. 2. The electro-optical device according to claim 1, wherein the first wiring is a single layer film made of Cr, Mo, a Cr alloy containing Cr as a main component, or a Mo alloy containing Mo as a main component. . A second wiring for electrically connecting the switching element and the pixel electrode, and a resin film formed in the reflective display region;
The electro-optical device according to claim 1, wherein the second wiring is covered with the resin film. Further comprising an overcoat film formed in the reflective display region;
The electro-optical device according to claim 1, wherein the overcoat film functions as a passivation film for the wiring portion. A method of manufacturing an electro-optical device in which a plurality of pixel electrodes and a switching element provided corresponding to each of the plurality of pixel electrodes are formed,
Forming a first wiring for supplying a signal to the switching element;
The display region has a reflective display region, and a step of forming a reflective film having a lower resistance than the first wiring in the reflective display region;
Comprising
A method of manufacturing an electro-optical device, wherein the first wiring is extended to the periphery of the display region, and the reflective film is stacked on the first wiring to form a wiring portion. An electronic apparatus comprising the electro-optical device according to claim 1.

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