JP4069930B2 - Electro-optical device, manufacturing method thereof, and electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device such as a liquid crystal device, an EL (Electro Luminescence) device, and an electrophoretic device, a method for manufacturing the electro-optical device, and an electronic apparatus configured using the electro-optical device.

  In recent years, for example, liquid crystal devices are widely used as display units for displaying information in electronic devices such as mobile phones, personal digital assistants, personal computers, and the like. In the future, it is conceivable that EL devices will be used together with liquid crystal devices.

  The above-described liquid crystal device generally includes a pair of substrates bonded via a sealing material, a liquid crystal sandwiched between both substrates, and an electrode for applying a voltage to the liquid crystal. In addition, a wiring is formed in a region of one substrate that protrudes to the outside of the other substrate (that is, a protruding region), and terminals of various mounting components are connected to one end of the wiring, and the electrodes are connected via the wiring. A configuration in which a voltage is supplied is known.

  Here, as the above-mentioned mounting parts, for example, an IC chip mounted using COG (Chip On Lass) technology on an overhang region, an FPC for connecting an external device such as a circuit board and the liquid crystal device, or the like Can be considered.

  However, since the wiring formed in the overhang region is exposed to the outside air, moisture and the like in the outside air are likely to adhere to the wiring, and therefore the wiring is easily corroded. If the wiring is corroded in this way, the continuity between the wiring and the terminal of the mounting component becomes incomplete, which causes a problem that the reliability as the liquid crystal device is lowered. It was.

  On the other hand, considering that the wiring resistance in the wiring is kept low, the wiring is preferably formed of a low-resistance metal such as aluminum or chromium. However, this type of metal has a high tendency to ionize and is susceptible to corrosion. Therefore, the above problem appears more remarkably.

  The present invention has been made in view of the above problems, and an object of the present invention is to suppress corrosion of wiring formed on a substrate.

  In order to achieve the above object, an electro-optical device according to the present invention includes a first substrate and a second substrate arranged to face each other, and a liquid crystal is sandwiched between the first substrate and the second substrate. An electro-optical device comprising: a sealing material surrounding the liquid crystal; and a routing wiring routed along one side of the first substrate and toward the other side intersecting the one side. The routing wiring includes a first wiring layer formed over both the inner region of the sealing material and the outer region of the sealing material, and a region extending to the inner region of the sealing material and overlapping the sealing material. A second wiring layer formed to terminate, and the second wiring layer is made of chromium or aluminum, which is a conductive material having a lower resistance and higher ionization tendency than the first wiring layer. It is characterized by.

  The electro-optical device having the above configuration is considered as a liquid crystal device because it includes liquid crystal as a constituent element. According to this electro-optical device, since the second wiring layer is not formed in the outer region of the sealing material, it is possible to avoid adhesion of moisture or the like in the outside air to the second wiring layer, and therefore, a conductive material having low corrosion resistance. Even if the second wiring layer is formed of a material, that is, a metal having a high ionization tendency and a low-resistance conductive material such as chromium or aluminum, the second wiring layer can be prevented from corrosion and the wiring resistance can be kept low. .

  In the electro-optical device configured as described above, one end of the wiring in the outer region of the sealing material can be connected to an external connection circuit. Here, as the external connection circuit, a driving IC, a TAB (Tape Automated Bonding) substrate on which the driving IC is mounted, an FPC (Flexible Printed Circuit) connected to the driving IC, and the like can be considered. According to this configuration, the output of the external connection circuit can be introduced into the electro-optical device through the wiring.

  In the electro-optical device having the above structure, an electrode can be formed on the second substrate, and in that case, the electrode can be electrically connected to the wiring on the first substrate. Thus, various signals such as a data signal and a scanning signal can be supplied to the electrode through the wiring.

  In the electro-optical device having the above-described configuration, in particular, in the electro-optical device having the second substrate, the wiring can be formed on the second substrate, and the wiring on the first substrate can be connected to the first substrate. It is possible to conduct to the wiring on the two substrates.

  In this case, for example, it is not necessary to mount a mounting component to be connected to the wiring on the second substrate, such as a driving IC or FPC, on the second substrate. That is, mounting components need only be mounted on the surface of one of the pair of substrates, so that the configuration can be simplified and the manufacturing cost can be reduced.

  In the electro-optical device configured as described above, wherein the wiring on the first substrate is electrically connected to the wiring on the second substrate, the wiring on the first substrate and the wiring on the second substrate are dispersed in the sealing material. It is desirable to conduct through the conductive particles formed. In this case, the wirings on both the substrates can be made conductive by bonding the two substrates through the sealing material, so that a special structure for making both the wirings conductive is unnecessary. Therefore, the configuration can be further simplified and the manufacturing cost can be further reduced.

  In the electro-optical device having the above configuration, the width of the portion formed in the outer region of the sealing material in the wiring formed on the first substrate is larger than the width of the portion formed in the region overlapping with the sealing material. It is desirable to make it wide. In other words, the width of the portion not having the second wiring layer, that is, the portion formed by the first wiring layer or the portion formed by both the first wiring layer and the third wiring layer has the second wiring layer. It is desirable to make it wider than the width of the portion. Since the portion not having the second wiring layer is constituted by the first wiring layer or the third wiring layer having a higher resistance value than the second wiring layer, the wiring resistance is increased in this portion. Is also possible. However, if the width of the portion is increased as described above, it is possible to suppress an increase in wiring resistance.

    Next, an electronic apparatus according to the present invention is configured using the electro-optical device having the above-described configuration. As described above, according to the electro-optical device having the above-described configuration, the corrosion of the wiring can be suppressed. Therefore, according to the electronic apparatus using such an electro-optical device, it is high by avoiding poor conduction. Reliability can be realized.

  Next, a method for manufacturing an electro-optical device according to the present invention includes a liquid crystal between a first substrate and a second substrate bonded via a sealing material, and the inside of the sealing material of the first substrate. An electro-optical device manufacturing method in which a routing wiring is formed over both a region and a region outside the sealing material, wherein the first wiring layer constituting the routing wiring is the first wiring layer of the first substrate. A first wiring layer forming step formed over an inner region of the sealing material and an outer region of the sealing material, and a second wiring layer constituting the routing wiring, the inner region of the sealing material in the first substrate And a step of bonding the first substrate and the second substrate through the sealing material, and the second wiring. The layer has a lower resistance than the first wiring layer And an ionization tendency is highly conductive material, characterized in that it consists of chromium or aluminum.

  According to the method of manufacturing the electro-optical device having this configuration, the second wiring layer is not formed in the outer region of the sealing material, so that it is possible to avoid moisture and the like in the outside air from adhering to the second wiring layer. Even if the second wiring layer is formed of a conductive material having low corrosion resistance, that is, a metal having a high ionization tendency and a low resistance, such as chromium or aluminum, the second wiring layer is prevented from corrosion and wiring resistance is reduced. It can be kept low.

(First embodiment of electro-optical device)
Hereinafter, an active matrix system including a TFD (Thin Film Diode) element as a switching element, a liquid crystal is used as an electro-optical material, and a reflective liquid crystal device that uses external light such as sunlight or indoor light is used. The embodiment of the present invention will be described by taking the case of applying the present invention as an example.

  FIG. 1 is a block diagram showing the electrical configuration of the liquid crystal device according to this embodiment. As shown in the figure, the liquid crystal device 1 includes a plurality of scanning lines 25 extending in the X direction, a plurality of data lines 11 extending in the Y direction perpendicular to the X direction, and the scanning lines 25 and the data lines 11. And a plurality of display dots 50 provided at each intersection. Each display dot 50 has a configuration in which the liquid crystal display element 51 and the TFD element 13 are connected in series. These display dots 50 are arranged in a matrix.

  One of these display dots 50 is a minimum unit display element for displaying an image, and the display image is formed by a combination of three primary colors of R (red), G (green), and B (blue). In the case of a color image, three display dots 50 of R, G, and B are gathered to form one pixel. On the other hand, when the display image is a black and white image, one pixel is formed by one display dot 50.

  In FIG. 1, among the plurality of scanning lines 25, the odd-numbered scanning lines 25 counted from the top are connected to the first Y driver IC 40a. On the other hand, the even-numbered scanning lines 25 counted from the top are connected to the second Y driver IC 40b. Then, the scanning signals generated by these Y driver ICs 40 a and 40 b are supplied to each scanning line 25. Hereinafter, when it is not necessary to distinguish the first Y driver IC 40a and the second Y driver IC 40b from each other, they are simply referred to as a Y driver IC 40.

  Each of the plurality of data lines 11 is connected to the X driver IC 41, and a data signal generated by the X driver IC 41 is supplied to the data lines 11. On the other hand, each of the plurality of display dots 50 arranged in a matrix corresponds to any of R, G, and B in the present embodiment.

  Next, FIG. 2A shows a case where the liquid crystal device 1 according to the present embodiment is viewed from the observation side, that is, the side where the observer should be positioned. Further, FIG. 2B shows a case where the liquid crystal device 1 is viewed from the back side, that is, the side opposite to FIG. In the following, as shown in FIGS. 2A and 2B, the negative direction of the X axis is expressed as “A side” and the positive direction is expressed as “B side”.

  As shown in FIGS. 2A and 2B, the liquid crystal device 1 includes an element substrate 10 and a counter substrate 20 that are opposed to each other by a sealing material 30, and the both substrates and the sealing material 30. A liquid crystal (not shown in FIG. 2) is sealed in the enclosed region. The sealing material 30 is formed in a substantially rectangular frame shape along the edge of the counter substrate 20, that is, the outer periphery. An opening for enclosing the liquid crystal is formed in a part of the sealing material 30. After the liquid crystal is sealed through the opening, the opening is sealed with a sealing material 31.

  A large number of conductive particles having conductivity are dispersed in the sealing material 30. These conductive particles are, for example, plastic particles subjected to metal plating or conductive resin particles, and the function of electrically connecting the wirings formed on each of the element substrate 10 and the counter substrate 20; It also functions as a spacer that keeps the gap between the substrates, ie, the cell gap constant. In practice, a polarizing plate for polarizing incident light, a phase difference plate for compensating for interference colors, and the like are attached to the outer surfaces of the element substrate 10 and the counter substrate 20. Since there is no direct relationship with the present invention, its illustration and description are omitted.

  The element substrate 10 and the counter substrate 20 are formed of a light-transmitting plate member such as light-transmitting glass, light-transmitting quartz, or light-transmitting plastic. Among these substrates, the above-described plurality of data lines 11 are formed on the inner surface of the element substrate 10 located on the observation side, that is, on the liquid crystal side surface. On the other hand, a plurality of scanning lines 25 are formed on the inner surface of the counter substrate 20 located on the back side.

  The element substrate 10 has an overhang area 10 a that protrudes to the outside of the counter substrate 20. The overhang area 10 a is an area that protrudes outward from the outer peripheral edge of the seal material 30, that is, the seal material 30 and the inside of the seal material 30. This is a region that does not overlap with the liquid crystal sealed in the. An X driver IC 41 is mounted near the center in the X direction in the overhang area 10a. A first Y driver IC 40a and a second Y driver IC 40b are mounted at positions facing each other in the X direction with the X driver IC 41 interposed therebetween.

  Each of the driver ICs 41, 40a, 40b is mounted on the overhanging region 10a using COG technology. That is, these driver ICs are bonded onto the overhanging region 10a of the element substrate 10 using an ACF (Anisotropic Conductive Film) in which conductive particles are dispersed in an adhesive (FIG. 8 ( b)). A plurality of external connection terminals 17 are formed at the edge of the overhang region 10a. For example, one end of an FPC (Flexible Printed Circuit) (not shown) is connected to the portion where the external connection terminal 17 is formed, and an external device such as a circuit board is connected to the other end of the FPC. Is done. As a result, power supply power, electrical signals, and the like output from the external device are supplied to the external connection terminal 17 through the FPC.

  The X driver IC 41 generates a data signal according to a signal input from the external device via the FPC and the external connection terminal 17 and outputs the data signal to the data line 11. On the other hand, the Y driver IC 40 generates and outputs a scanning signal in accordance with a signal input from an external device via the FPC and the external connection terminal 17. This scanning signal is given from the routing wiring 16 formed on the element substrate 10 to each scanning line 25 on the counter substrate 20 through the conductive particles in the sealing material 30.

  Next, the structure surrounded by the inner periphery of the sealing material 30, that is, the configuration in the display area V will be described. FIG. 3 is a diagram showing a part of the display area V in the cross section according to the line CC ′ in FIG. FIG. 4 is a perspective view showing several display dots formed in the display area V. FIG. A cross-sectional view taken along line DD ′ in FIG. 4 corresponds to FIG.

  As shown in these drawings, on the inner surface of the element substrate 10 in the display region V, that is, on the surface on the liquid crystal 35 side, there are a plurality of pixel electrodes 12 arranged in a matrix and gap portions between the pixel electrodes 12. A plurality of data lines 11 extending in the Y direction are formed. Each pixel electrode 12 is a substantially rectangular electrode formed of a transparent conductive material such as ITO (Indium Tin Oxide). Each pixel electrode 12 and the data line 11 adjacent to the pixel electrode 12 on one side are connected via a TFD element 13.

  Further, as shown in FIG. 3, the surface of the element substrate 10 on which the data line 11, the pixel electrode 12, and the TFD element 13 are formed is covered with an alignment film 56 (not shown in FIG. 4). The alignment film 56 is an organic thin film made of polyimide or the like, and the alignment film is subjected to a rubbing process for defining the alignment of the liquid crystal 35 when no voltage is applied.

  FIG. 5A shows a case where one display dot 50 on the element substrate 10 is viewed from the counter substrate 20 side, that is, from the back side with respect to the observation side. 5B is a cross-sectional view according to the line EE ′ in FIG. 5A, and FIG. 5C is a cross-sectional view according to the line FF ′ in FIG. 5A. is there. As shown in FIGS. 5A and 5C, the data line 11 includes a main wiring 11a and an auxiliary wiring 11b stacked on the main wiring 11a. The auxiliary wiring 11b is a wiring that functions as the data line 11 instead of the main wiring 11a when the main wiring 11a is disconnected, and is formed of the same layer as the pixel electrode 12.

  On the other hand, as shown in FIGS. 5A and 5B, the TFD element 13 includes a first metal film 13a extending in the X direction and intersecting the main wiring 11a of the data line 11, and the first metal film 13a. The insulating film 13b is formed on the surface of the metal film 13a by anodic oxidation, and the second metal films 11c and 13c are formed on the surface of the insulating film 13b so as to be separated from each other.

  The first metal film 13a is formed of various conductive materials such as tantalum (Ta) alone or a tantalum alloy containing tungsten (W). However, in the present embodiment, the first metal film 13a is formed of tantalum. Further, as shown in FIG. 5A, the second metal film 11c is located in a portion of the main wiring 11a constituting the data line 11 that intersects the first metal film 13a. The auxiliary wiring 11b is laminated on the surface of the main wiring 11a other than the portion corresponding to the second metal film 11c.

  The second metal film 13 c is connected to the pixel electrode 12. The main wiring 11a (including the second metal film 11c) and the second metal film 13c of the data line 11 are formed of the same layer made of various conductive materials such as chromium (Cr) and aluminum (Al). . However, in this embodiment, the main wiring 11a and the second metal film 13c are formed of chromium.

The TFD element 13 includes a first TFD element 131 and a second TFD element 132. That is, as shown in FIGS. 5A and 5B, the first TFD element 131 includes the second metal film 11c, the insulating film 13b, and the first metal film 13a in this order when viewed from the data line 11 side. As a result of having a laminated structure and adopting a metal / insulator / metal sandwich structure, it has a diode switching characteristic in both positive and negative directions.
On the other hand, the second TFD element 132 has a configuration in which the first metal film 13a, the insulating film 13b, and the second metal film 13c are stacked in this order when viewed from the data line 11 side, and is diode switching opposite to the first TFD element 131. Has characteristics.

  Thus, since the TFD element 13 has a configuration in which two diodes are connected in series in opposite directions, the current-voltage nonlinear characteristic is bi-directional with positive and negative in comparison with the case where one diode is used. Symmetrized over. However, in order to ensure the symmetry of this nonlinear characteristic, the insulating film 13b of the first TFD element 131 and the insulating film 13b of the second TFD element 132 have the same thickness, and the first TFD element 131 includes the first metal. The area where the film 13a and the second metal film 11c face each other needs to be equal to the area where the first metal film 13a and the second metal film 13c face each other in the second TFD element 132.

  In this embodiment, in order to make the area of the first TFD element 131 the same as the area of the second TFD element 132, as shown in FIG. 5A, the main wiring 11a constituting the data line 11 is formed. Of these, the width of the portion corresponding to the second metal film 11c is made narrower than the width of the other portions.

  3 and 4, a reflective layer 21, a color filter 22, a light shielding layer 23, an overcoat layer 24, a plurality of scanning lines 25 and an alignment film 26 are formed on the surface of the counter substrate 20. The reflective layer 21 is a thin film formed of a metal having light reflectivity such as aluminum or silver. In FIG. 3, the light R incident on the liquid crystal device from the observation side is reflected on the surface of the reflective layer 21 and emitted to the observation side, thereby realizing a so-called reflection type display.

  Here, as shown in FIG. 3, the region covered with the reflective layer 21 on the inner surface of the counter substrate 20 is a rough surface on which a large number of fine irregularities are formed. Therefore, fine irregularities reflecting the rough surface are formed on the surface of the reflective layer 21 formed in a thin film so as to cover the rough surface. And this unevenness | corrugation functions as a scattering structure for scattering light. As a result, incident light from the observation side is reflected in a state of being appropriately scattered on the surface of the reflective layer 21, so that a specular reflection on the surface of the reflective layer 21 is avoided and a wide viewing angle is realized.

  The color filter 22 is a resin layer formed on the surface of the reflective layer 21 corresponding to each display dot 50, and as shown in FIG. 4, R (red), G (green) or B depending on the dye or pigment. (Blue) is colored. One pixel that forms a display image is configured by three display dots 50 of different colors.

  The light shielding layer 23 is formed in a lattice shape corresponding to the gaps between the pixel electrodes 12 arranged in a matrix on the element substrate 10 and plays a role of shielding the gaps between the pixel electrodes 12. As shown in FIG. 3, the light shielding layer 23 in the present embodiment has a configuration in which color filters 22 for three colors of R, G, and B are stacked. The overcoat layer 24 is a layer for flattening the unevenness formed by the color filter 22 and the light shielding layer 23, and is formed of, for example, an epoxy or acrylic resin material.

  The scanning line 25 is a strip-like electrode formed on the overcoat layer 24 by a transparent conductive material such as ITO. As shown in FIG. 4, each scanning line 25 is formed to extend in the X direction so as to face a plurality of pixel electrodes 12 that are arranged in the X direction on the element substrate 10. Then, the liquid crystal display element 51 shown in FIG. 1 is configured by the pixel electrode 12, the scanning line 25 opposed to the pixel electrode 12, and the liquid crystal 35 sandwiched therebetween.

  When a voltage higher than the threshold is applied to the TFD element 13 by supplying a scanning signal to the scanning line 25 and supplying a data signal to the data line 11, the TFD element 13 is turned on. As a result, charges are accumulated in the liquid crystal display element 51 connected to the TFD element 13, and the alignment of the liquid crystal 35 changes. Thus, desired display can be performed by changing the orientation of the liquid crystal 35 for each display dot 50. Further, even if the TFD element 13 is turned off after the charge is accumulated, the charge accumulation in the liquid crystal display element 51 is maintained.

  In FIG. 3, the surface of the overcoat layer 24 on which the plurality of scanning lines 25 are formed is covered with an alignment film 26. The alignment film 26 is formed of the same material as the alignment film 56 formed on the element substrate 10, and is subjected to a rubbing process in the same manner as the alignment film 56.

Next, with reference to FIG. 6, the aspect of the wiring of the liquid crystal device according to the present embodiment will be described.
FIG. 6 shows a planar structure when the liquid crystal device 1 is viewed from the observation side, that is, the element substrate 10 side. The substrate material constituting the element substrate 10 is removed, and the data lines 11 and the like formed on the substrate material are shown in FIG. The state shown in the figure is shown as it is. The direction from the front side to the back side in FIG. 6 corresponds to the positive direction of the Z axis in FIGS. 2 (a) and 2 (b). Therefore, in FIG. 6, the element substrate 10 is located on the front side with respect to the paper surface, and other elements are located on the back side of the paper surface with respect to the element substrate 10.

  In FIG. 6, each data line 11 extends in the Y direction in the display area V, and extends to the protruding area 10 a across one side 30 a of the sealing material 30. The ends of the data lines 11 that protrude into the protruding area 10 a are connected to the output terminal of the X driver IC 41 by conductive particles contained in the ACF 29. With this configuration, the data signal generated by the X driver IC 41 is output to each data line 11.

  In FIG. 6, a plurality of scanning lines 25 (indicated by diagonal lines) extending in the X direction on the counter substrate 20 are alternately drawn to the A side and the B side one by one, and the drawn ends The portion overlaps with the sealing material 30. Here, FIG. 7 is a cross-sectional view taken along the line GG ′ in FIG. 6, that is, a cross-sectional view corresponding to the odd-numbered scanning lines 25. As shown in FIG. 7, the color filter 22, the overcoat layer 24, and the like are not formed in the vicinity of the region covered with the sealing material 30 in the counter substrate 20. On the other hand, the odd-numbered scanning lines 25 extend from the upper surface of the overcoat layer 24 to the upper surface of the counter substrate 20 and extend in the X direction toward the B side of the sealing material 30 as they are. The part is covered with the sealing material 30. That is, the end portion of the scanning line 25 is interposed between the counter substrate 20 and the sealing material 30.

  Further, in FIG. 6, the width of the end portion (hereinafter referred to as “conductive portion 25 a”) of the scanning line 25 covered with the sealing material 30 is wider than the width of the portion existing in the display region V. It has become. The same applies to the even-numbered scanning lines 25, and as shown in FIG. 6, the conductive portion 25 a that extends in the X direction toward the A-side side of the sealing material 30 and is located at the end thereof is the sealing material 30. It overlaps with the side on the A side. A peripheral light shielding layer 57 having a frame shape along the edge of the display region V is formed on the liquid crystal side surface of the element substrate 10 and in the vicinity of the inner periphery of the sealing material 30. The peripheral light shielding layer 57 is a layer for shielding the vicinity of the edge of the display region V.

6 and 7, the surface of the element substrate 10 on the liquid crystal side includes a plurality of elements along the two edges extending in the Y direction of the element substrate 10 and toward the other edge intersecting the edges. The routing wiring 16 is formed. Each routing wiring 16 is a wiring for connecting the output terminal of the Y driver IC 40 and the scanning line 25. More specifically, as shown in FIG. 6, the routing wiring 16 is provided on the routing wiring 161 formed along the B-side edge of the element substrate 10 and on the A-side edge of the element substrate 10. The lead wiring 162 is formed along the routing wiring 162. Each of these routing wirings 16 has a conduction part 16 a and an extension part 16 b extending along the edge of the element substrate 10.

  The conducting portion 16a of each routing wiring 16 is formed to face the conducting portion 25a of the scanning line 25. As shown in FIG. 7, the conduction portions 25 a of the odd-numbered scanning lines 25 formed on the counter substrate 20 are formed on the element substrate 10 through the conductive particles 32 dispersed in the sealing material 30. The conductive portion 16a of the lead wiring 161 is electrically connected. The same applies to the even-numbered scanning lines 25, and the conductive portion 25 a is electrically connected to the lead wiring 162 formed on the element substrate 10 via the conductive particles 32 located on the side of the sealing material A on the A side. Conductive with the portion 16a.

  As shown in FIG. 6, the extending portion 16 b of each routing wiring 16 is connected to the conducting portion 16 a at one end and is covered with the sealing material 30 in the element substrate 10, that is, the sealing material 30. It extends to reach the overhanging region 10a through the overlapping region. More specifically, the extending portion 16b of the routing wiring 161 is covered with the side on the B side of the sealing material 30 on the surface of the element substrate 10 and extends in substantially the same direction as the side on the B side. , Extending toward the B side of the overhang region 10a, that is, toward the portion where the first Y driver IC 40a is to be mounted. And the edge part which protruded in the overhang | projection area | region 10a among the said extension parts 16b is connected to the output terminal of 1st Y driver IC40a.

  On the other hand, the extending portion 16b of the routing wiring 162 is covered with the side on the A side of the sealing material 30 on the surface of the element substrate 10 and extends in substantially the same direction as the side on the A side. The end portion that protrudes from the A-side portion is connected to the output terminal of the second Y driver IC 40b. Thus, in this embodiment, the part covered with the edge | side of the sealing material 30 among the extension parts 16b of the routing wiring 16 is extended in the substantially the same direction as the said edge | side. In other words, the sealing material 30 is formed such that the side extending in the substantially same direction as the extending direction of a part of the routing wiring 16 among the sides of the sealing material 30 covers a part of the routing wiring 16. Has been.

  For this reason, the width of the two sides extending in the Y direction of the sealing material 30, that is, the two sides that should cover the routing wiring 16, is wider than the width of the two sides extending in the X direction. That is, the two sides extending in the X direction need only be wide enough to bond the element substrate 10 and the counter substrate 20, while the two sides extending in the Y direction are bonded to both substrates. In addition to matching, the width is selected so that the routing wiring 16 can be covered.

  The scanning signal output from the first Y driver IC 40 a is obtained by dispersing the conductive particles 32 distributed on the extending portion 16 b and the conductive portion 16 a of the routing wiring 161 formed on the element substrate 10 and the B side of the sealing material 30. , To the conduction portions 25a of the odd-numbered scanning lines 25 formed on the counter substrate 20. Similarly, the scanning signal output from the second Y driver IC 40b is supplied to the conductive portion 25a of the even-numbered scanning line 25 via the lead wire 162 and the conductive particles 32 dispersed on the A side of the sealing material 30. Is done.

  Thus, in this embodiment, since the routing wiring 16 has the part covered with the sealing material 30, it can avoid that moisture etc. adhere to the said part and a corrosion arises. Further, in this portion, there is no situation in which moisture and conductive impurities adhere across the plurality of routing wirings 16, so that no short circuit occurs between the wirings. The interval can be reduced. As a result, the space in which the routing wiring 16 is to be formed can be reduced.

  Next, the layer configuration of the routing wiring 16 will be described. The routing wiring 16 in the present embodiment is formed from the same layer as the elements in the display region V such as the TFD element 13 and the pixel electrode 12. However, a portion of the routing wiring 16 that is located in the overhanging region 10 a, that is, a portion that is in the outer region of the sealing material 30, and a portion that is covered by the sealing material 30, that is, a portion that overlaps with the sealing material 30 The layer structure is different. The details are as follows.

  FIG. 8A shows an enlarged view of the portion indicated by the arrow P in FIG. 6, that is, the portion of the routing wiring 16 that extends to the overhang region 10a. FIG. 8B is a cross-sectional view according to the line HH ′ in FIG. FIG. 8C is a cross-sectional view taken along line II ′ in FIGS. 8A and 8B. FIG. 8D is a cross-sectional view taken along line JJ ′ in FIGS. 8A and 8B.

  As shown in these drawings, the routing wiring 16 includes a first wiring layer 181, a second wiring layer 182, and a third wiring layer 183. The first wiring layer 181 is formed from the same layer as the first metal film 13a (see FIG. 5B) of the TFD element 13, and the second wiring layer 182 is the main wiring 11a of the data line 11 and the second wiring of the TFD element 13. The metal film 13c (see FIG. 5B) is formed from the same layer, and the third wiring layer 183 is formed from the same layer as the pixel electrode 12 (see FIG. 5B). That is, in the present embodiment, the first wiring layer 181 is made of tantalum, the second wiring layer 182 is made of chromium, and the third wiring layer 183 is made of ITO. Here, since chromium has a higher ionization tendency than tantalum or ITO, the second wiring layer 182 is more easily corroded than the first wiring layer 181 and the third wiring layer 183.

  The first wiring layer 181 and the third wiring layer 183 are formed so as to correspond to the entire length of the routing wiring 16 extending from the conducting portion 16a of FIG. 6 to the end located in the overhanging region 10a. On the other hand, the second wiring layer 182 is formed only in a region of the element substrate 10 facing the sealing material 30, that is, in a region of the element substrate 10 that overlaps with the sealing material 30.

  More specifically, the second wiring layer 182 is only on the side opposite to the overhanging region 10a when viewed from a boundary 10b located on the inner side by a predetermined length from the outer peripheral edge of the sealing material 30 (hereinafter referred to as a wiring boundary) 10b. It is formed but not formed in the overhang region 10a. Accordingly, the portion of the routing wiring 16 on the conductive portion 16a side as viewed from the wiring boundary 10b, that is, the portion formed in the region overlapping with the sealing material 30 is shown in FIGS. 8B and 8C. Thus, the first wiring layer 181, the second wiring layer 182, and the third wiring layer 183 are stacked in this order. On the other hand, as shown in FIGS. 8B and 8D, only the two layers of the first wiring layer 181 and the third wiring layer 183 are present on the protruding region 10a side when viewed from the wiring boundary 10b. Are stacked.

  Incidentally, in FIG. 8A, a portion of the routing wiring 16 formed in the overhanging region 10a extends at a predetermined angle with respect to the Y direction. For this reason, in this part, a wide pitch can be secured as compared with the part extending in the Y direction, that is, the part covered with the sealing material 30. In the present embodiment, the width W1 of the portion of the routing wiring 16 formed in the overhanging region 10a is wider than the width W2 of the portion covered with the sealing material 30.

  In FIG. 8B, the external connection terminal 17 formed at the end of the element substrate 10 has the same layer structure as the portion of the lead wiring 16 on the overhanging region 10a side when viewed from the wiring boundary 10b. ing. That is, each external connection terminal 17 has a configuration in which a first wiring layer 181 made of tantalum and a third wiring layer 183 made of ITO are laminated.

  As described above, in the present embodiment, the second wiring layer 182 that is a part of the plurality of wiring layers constituting the routing wiring 16 is formed in the region overlapping the sealing material 30, while Since the first wiring layer 181 as the wiring layer is formed corresponding to the entire length of the routing wiring 16, there is an advantage that corrosion of the routing wiring 16 can be effectively suppressed. That is, the second wiring layer 182 made of chromium has a low resistance value, but has a higher ionization tendency and lower corrosion resistance to the atmosphere than the first wiring layer 181 made of tantalum and the third wiring layer 183 made of ITO. It has the property of being easily corroded.

  For this reason, when the 2nd wiring layer 182 is formed in the part which is not covered with the sealing material 30 among the routing wiring 16, and the external connection terminal 17, the said 2nd wiring layer 182 adheres the water | moisture content etc. in external air, etc. This can cause a problem of being easily corroded. On the other hand, according to the present embodiment, the second wiring layer 182 having a high ionization tendency is formed only in the region covered with the sealing material 30, and moisture or the like adheres to the second wiring layer 182. Since this can be avoided, corrosion of the second wiring layer 182 can be suppressed.

  On the other hand, tantalum constituting the first wiring layer 181 and ITO constituting the third wiring layer 183 have a higher resistance value than chromium constituting the second wiring layer 182. For this reason, when the routing wiring 16 is formed only by the first wiring layer 181 and the second wiring layer 182 over the entire length, the wiring resistance is increased, which may adversely affect the display characteristics of the liquid crystal device. On the other hand, according to the present embodiment, since the second wiring layer 182 having a low resistance value is formed in the portion of the routing wiring 16 covered with the sealing material 30, an increase in wiring resistance is suppressed. There is an advantage that you can.

  Furthermore, in the present embodiment, the width of the portion of the routing wiring 16 formed in the overhang region 10 a is wider than the width of the portion covered with the sealing material 30. In other words, the width of the portion composed of the first wiring layer 181 and the third wiring layer 183 is larger than the width of the portion including the second wiring layer 182. For this reason, although the part in the overhang | projection area | region 10a is comprised by the 1st wiring layer 181 and the 3rd wiring layer 183 with comparatively high resistance value, the wiring resistance in the said part becomes extremely high. The inconvenience of end is avoided.

(Embodiment of manufacturing method of electro-optical device)
Next, a method for manufacturing the electro-optical device will be described. First, a method for manufacturing each element such as the data line 11 and the TFD element 13 provided on the element substrate 10 of FIG. 3 will be described. 9 and 10 show a method for manufacturing one display dot 50 on the element substrate 10 in the order of steps. FIG. 11 shows a method of manufacturing the lead wiring 16 on the element substrate 10 in the order of steps.

  As described above, the routing wiring 16 in the present embodiment is formed by the same layer as each layer constituting the TFD element 13 and the pixel electrode 12. Therefore, in the following, the manufacturing process of both the display dot 50 and the lead wiring 16 will be described in parallel. Further, regarding the region in which the routing wiring 16 is to be formed in FIG. 6, the positional relationship between the overhang region 10a, the region in which the sealing material 30 is to be formed, and the region in which the Y driver IC 40 is to be mounted is as shown in FIG. As shown in (a).

First, as shown in FIGS. 9A and 11A, a metal film 61 made of tantalum is formed on the surface of the element substrate 10. For forming the metal film 61, for example, a sputtering method or an electron beam evaporation method can be used. A suitable value for the thickness of the metal film 61 is selected according to the application of the TFD element 13 or the like, but it is usually about 100 nm to 500 nm. Note that an insulating film made of tantalum oxide (Ta ₂ O ₅ ) or the like may be formed on the surface of the element substrate 10 before the metal film 61 is formed. If the metal film 61 is formed using this insulating film as a base, the adhesion between the metal film 61 and the element substrate 10 can be improved and the diffusion of impurities from the element substrate 10 to the metal film 61 can be suppressed.

  Next, the metal film 61 is patterned by a photolithography process and an etching process. Specifically, in the display region V of FIG. 6, the shape corresponds to the first metal film 13a of the TFD element 13 as shown in FIG. 9 (e1), and as shown in FIG. 9 (a1). The metal film 61 is patterned into a shape extending along the plurality of display dots 50 that form a row in the X direction.

  On the other hand, in the region where the routing wiring 16 in FIG. 6 is to be formed, the first wiring layer 181 constituting the routing wiring 16 and the outside are formed by the same process as the patterning as shown in FIG. A first wiring layer 181 constituting the connection terminal 17 is formed. As described above, the first wiring layer 181 constituting the routing wiring 16 is formed corresponding to the entire length of the routing wiring 16 extending from the conduction portion 16a in FIG. 6 to the end located in the overhang region 10a. The

  Next, the surface of the metal film 61 formed in the display region V in FIG. 9A is oxidized by anodic oxidation to oxidize the surface of the metal film 61 as shown in FIG. 9B. An oxide film 62 made of tantalum is formed. Specifically, the element substrate 10 is immersed in a predetermined electrolytic solution, and a predetermined voltage is applied between the metal film 61 in the display region V and the electrolytic solution to oxidize the surface of the metal film 61. A suitable value for the thickness of the oxide film 62 is selected according to the characteristics of the TFD element 13, and is about 10 to 35 nm, for example. As an electrolytic solution used for anodization, for example, a 0.01 to 0.1% by weight citric acid aqueous solution can be used. Thereafter, in order to remove pinholes and stabilize film quality, the oxide film 62 formed by the anodic oxidation is subjected to heat treatment. Note that the first wiring layer 181 for the routing wiring 16 shown in FIG. 11B is not anodized. Therefore, no oxide film is formed on the surface of the first wiring layer 181 (see FIG. 11C).

  Next, as shown in FIGS. 9C and 11C, a metal film 63 is formed so as to cover the entire surface of the element substrate 10. The metal film 63 is formed to a thickness of about 50 nm to 300 nm by, for example, a sputtering method. The metal film 63 includes the main wiring 11a in the data line 11 in FIG. 10C1, the second metal film 13c of the TFD element 13 in FIG. 9E1, and the routing wiring 16 in FIG. It is a thin film that becomes the second wiring layer 182. Therefore, the metal film 63 in this embodiment is formed of chromium.

  Thereafter, in FIGS. 9C and 11C, the metal film 63 is patterned by photolithography and etching. As a result, in the display region V, as shown in FIGS. 9D and 9D1, the main wiring 11a having a thinned portion corresponding to the second metal film 11c, and FIG. 9E1. The second metal film 13c of the second TFD element 132 is formed.

  On the other hand, in the region where the routing wiring 16 is to be formed, the second wiring layer 182 is formed as shown in FIG. 11D by patterning the metal film 63 in FIG. That is, the second wiring layer 182 having a shape corresponding to a portion of the routing wiring 16 on the conductive portion 16a (see FIG. 6) side from the wiring boundary 10b is formed. In other words, in the metal film 63 located on the surface of the first wiring layer 181 formed in the previous step, a portion on the overhanging region 10a side as viewed from the wiring boundary 10b (a portion where the external connection terminal 17 is to be formed) The metal film 63 corresponding to (including) is removed.

Next, in FIG. 9D, the metal film 61 and the oxide film 62 described above are patterned using a photolithography process and an etching process, and as shown in FIG. 9E and FIG. A first metal film 13a and an insulating film 13b constituting the TFD element 13 of the display dot 50 are formed. That is, by removing a portion between the display dots 50 that are arranged in the X direction in the metal film 61 covered with the oxide film 62, the island shape intersects with both the second metal films 11c and 13c. The first metal film 13a and the insulating film 13b are patterned so as to be a portion of Through this step, the first TFD element 131 and the second TFD element 132 are formed for each display dot 50. 10A is a cross-sectional view according to the line FF ′ in FIG. 9E1, and the second wiring of the main wiring 11a of the data line 11 and the second TFD element 132.
The cross-sectional shape of the metal film 13c is shown.

  Further, in the patterning of the metal film 61 and the oxide film 62 in FIG. 9D, no processing is performed on the first wiring layer 181 and the second wiring layer 182 for the lead wiring 16 in FIG. 11D. .

  By the way, in the above example, the patterning process is performed on the metal film 61 and the oxide film 62 in FIG. 9D after the patterning process is performed on the metal film 63 in FIG. 9C. On the contrary, after the metal film 61 and the oxide film 62 are patterned, the metal film 63 may be formed and the metal film 63 may be patterned.

  Next, as shown in FIGS. 10B and 11E, a transparent conductive film 64 made of ITO is formed so as to cover the entire surface of the element substrate 10. For this film formation, for example, a sputtering method or the like can be used. Thereafter, the transparent conductive film 64 is patterned by, for example, a photolithography process and an etching process. As a result, in the display region V, as shown in FIGS. 10C and 10C1, the pixel electrode 12 connected to the second metal film 13c of the second TFD element 132 and the main wiring 11a are used together with the data. An auxiliary wiring 11b constituting the line 11 is formed.

  On the other hand, outside the display area V, as shown in FIG. 11 (f), a third wiring layer 183 covering the first wiring layer 181 and the second wiring layer 182 corresponding to the entire length of the routing wiring 16, A third wiring layer 183 that covers the first wiring layer 181 of the external connection terminal 17 is formed.

  Thereafter, as shown in FIG. 3, an alignment film 56 covering the display region V of the element substrate 10 is formed, and the alignment film 56 is rubbed in a predetermined direction. Next, in FIG. 11G, the sealing material 30 in which the conductive particles 32 are dispersed is applied using a technique such as screen printing. At this time, the sealing material 30 is applied so as to cover the entire length of the second wiring layer 182, that is, so that the second wiring layer 182 does not reach the overhanging region 10 a.

The above is the manufacturing method for manufacturing various elements on the element substrate 10 of FIG.
On the other hand, each element provided on the counter substrate 20 is formed through, for example, steps shown in FIGS. In addition, these figures have shown the vicinity of the cross section of the area | region which should be covered with the sealing material 30 among the opposing substrates 20 of FIG. An area where the sealing material 30 is to be formed is shown as a “sealing area” in FIG.

  First, in FIG. 12A, the surface of the region of the counter substrate 20 where the reflective layer 21 is to be formed is roughened. Specifically, for example, many fine regions of the surface of the counter substrate 20 are selectively removed by a predetermined thickness by using an etching process. As a result, a rough surface having a concave portion corresponding to the removed portion and a convex portion corresponding to the non-removed portion is formed on the surface of the counter substrate 20.

However, the method of roughening the surface of the counter substrate 20 is not limited to this.
For example, an epoxy-based or acrylic-based resin layer is formed so as to cover the counter substrate 20, and many fine portions on the surface of the resin layer are selectively removed by etching. Thereafter, the resin layer may be softened by applying heat, and a rough surface having smooth irregularities may be formed by rounding corner portions generated by etching.

  Next, a light-reflective metal thin film is formed by sputtering or the like so as to cover the entire surface of the counter substrate 20 in FIG. This thin film is formed of, for example, a single metal such as aluminum or silver, or an alloy containing these as a main component. Thereafter, the reflective layer 21 shown in FIG. 12B is formed by patterning the thin film using a photolithography process and an etching process.

  Next, as illustrated in FIG. 12C, the color filter 22 and the light shielding layer 23 are formed on the surface of the reflective layer 21. That is, after a resin film colored in one of R (red), G (green), and B (blue), for example, R color, is formed on the surface of the reflective layer 21 with a dye or pigment. The resin film is removed leaving a region where the R color filter 22 is to be formed and a lattice region where the light shielding layer 23 is to be formed, that is, a gap region between the display dots 50. Thereafter, the same process is repeated for the other two colors, that is, the G color and the B color, so that a color corresponding to one of the colors R, G, or B as shown in FIG. A filter 22 and a light shielding layer 23 in which these three color layers are stacked are formed.

  Thereafter, in FIG. 12D, an epoxy or acrylic resin material is applied so as to cover the color filter 22 and the light shielding layer 23, and is further baked to form an overcoat layer 24. Next, in FIG. 13E, a transparent conductive film 65 made of ITO or the like is formed so as to cover the entire surface of the counter substrate 20 on which the above elements are formed. For this film formation, for example, a sputtering method or the like can be used.

  The transparent conductive film 65 is patterned by photolithography and etching to form a plurality of scanning lines 25 as shown in FIG. Each of these scanning lines 25 is formed so as to reach a region where the sides on the A side and B side of the sealing material 30 are to be formed, and a conduction portion 25a is formed at the end thereof. Thereafter, as shown in FIG. 13G, an alignment film 26 is formed so as to cover the display region V, and the alignment film 26 is subjected to a rubbing process.

  Next, as shown in FIG. 2, the element substrate 10 and the counter substrate 20 obtained through the above steps are bonded together with a sealant 30 interposed therebetween so that the electrode forming surfaces face each other. At this time, in FIG. 6, the relative positions of the two substrates 10 and 20 are adjusted so that the conductive portion 25 a of each scanning line 25 and the conductive portion 16 a of the routing wiring 16 face each other with the sealing material 30 interposed therebetween. The

  Then, in FIG. 2, the liquid crystal is sealed through the opening portion of the sealing material 30 in the region surrounded by the substrates 10 and 20 and the sealing material 30, and then the opening portion is sealed with the sealing material 31. To do. Thereafter, a polarizing plate, a phase difference plate, and the like are attached to the outer surfaces of both the substrates 10 and 20, and the X driver IC 41 and the Y driver IC 40 are mounted on the overhanging region 10a of the element substrate 10 by using the COG technology. Thus, the liquid crystal device 1 described above is obtained.

  As described above, according to the present embodiment, since the lead wiring 16 is formed from the same layer as the TFD element 13 and the pixel electrode 12, the process of forming each of the TFD element 13 and the lead wiring 16 is separately performed. Compared with the case where it implements, the simplification of a manufacturing process and reduction of manufacturing cost can be achieved.

  By the way, as another means for preventing the corrosion of the second wiring layer 182 having low corrosion resistance shown in FIG. 8B, for example, a portion of the routing wiring 16 where the second wiring layer 182 is formed, It is also conceivable to cover with an insulating layer made of a resin material or the like. However, in this case, since a process for forming the insulating layer is indispensable, the manufacturing cost increases accordingly. On the other hand, according to the present embodiment, since the second wiring layer 182 is covered with the sealing material 30, an independent process for forming the insulating layer as described above is unnecessary. Therefore, according to the present embodiment, the effect of suppressing the corrosion of the second wiring layer 182 can be obtained without increasing the manufacturing cost and complicating the manufacturing process.

  As mentioned above, although one Embodiment of this invention was described, the said embodiment is an illustration to the last, Various modifications can be added to the said embodiment in the range which does not deviate from the meaning of this invention. As modifications, for example, the following can be considered.

(Second embodiment of electro-optical device)
In the previous embodiment shown in FIG. 6, a part of the routing wiring 16 is covered with the side of the sealing material 30 extending in the same direction as the part. A configuration as shown in FIG. 14 can be adopted. FIG. 14 shows an aspect of wiring when the liquid crystal device 81 is viewed from the observation side. Further, in FIG. 14, the same components as those shown in FIG. 6 are denoted by the same reference numerals. In FIG. 14, similarly to FIG. 6, the element substrate 10 is positioned closest to the paper surface, and other elements are positioned on the back side of the paper surface with respect to the element substrate 10.

  In FIG. 14, the routing wiring 16 is formed on the element substrate 10 and is composed of a conductive portion 16 a and an extending portion 16 b. And the point which the conduction | electrical_connection part 16a conduct | electrically_connects with the conduction | electrical_connection part 25a of the scanning line 25 through the electrically-conductive particle 32 in the sealing material 30 is the same as that of the case of embodiment shown in FIG. However, in this embodiment, the extending portion 16b does not extend in the region covered with the sealing material 30, that is, in the region overlapping with the sealing material 30, but is surrounded by the inner peripheral edge of the sealing material 30. 6 is different from the embodiment of FIG. 6 in that it extends within the display area V.

  That is, in the present embodiment, the extending portion 16b is connected to the conducting portion 16a in the region surrounded by the inner peripheral edge of the sealing material 30, and extends toward the overhanging region 10a in the region. Then, it crosses one side 30 a of the sealing material 30 and reaches the extended region 10 a, and its end is connected to the output terminal of the Y driver IC 40.

  FIG. 15 is a diagram showing a layer configuration of the routing wiring 16 in the present embodiment, and corresponds to FIG. 8B in the previous embodiment. As shown in FIG. 15, the layer configuration of the routing wiring 16 is the same as the layer configuration of the routing wiring 16 in the previous embodiment shown in FIG. 8B, and the TFD element 13 in FIG. 5B. The first wiring layer 181 formed of the same layer as the first metal film 13a, the main wiring 11a of the data line 11 of FIG. 5A and the second metal film 13c of the TFD element 13 are formed of the same layer. The second wiring layer 182 and the third wiring layer 183 formed of the same layer as the pixel electrode 12 in FIG. 5A are stacked.

  The first wiring layer 181 and the third wiring layer 183 are formed over the entire length of the lead wiring 16 extending from the conducting portion 16a of FIG. 14 to the end located in the overhanging region 10a. That is, the first wiring layer 181 and the third wiring layer 183 include a region of the element substrate 10 that overlaps the sealing material 30 and a region that faces the liquid crystal 35 (that is, a region surrounded by the inner peripheral edge of the sealing material 30). And overhanging region 10a.

  On the other hand, the second wiring layer 182 does not enter the overhanging region 10 a and is provided across a region of the element substrate 10 that overlaps the sealing material 30 and a region that faces the liquid crystal 35. That is, in the previous embodiment shown in FIG. 6, the second wiring layer 182 is adopted because the routing wiring 16 extends into the area covered with the sealing material 30, that is, the area overlapping with the sealing material 30. Is formed only in the region covered with the sealing material 30. On the other hand, the second wiring layer 182 in the present embodiment is formed in a region facing the liquid crystal 35 in addition to the region covered with the sealing material 30. Also in the present embodiment, as in the embodiment shown in FIG. 6, it is possible to avoid adhesion of moisture or the like in the outside air to the second wiring layer 182, and therefore, the corrosion of the second wiring layer 182 can be suppressed. Can do.

(Third embodiment of electro-optical device)
In the embodiment shown in FIG. 8B and FIG. 15, the routing wiring 16 has the first wiring layer 181 and the third wiring layer 183, but has only one of these. It is also good. That is, a portion of the routing wiring 16 located in the region covered with the sealing material 30 is configured by laminating the first wiring layer 181 and the second wiring layer 182, and a portion located in the overhanging region 10 a is formed. You may make it comprise only the 1st wiring layer 181. FIG. However, if the configuration in which the third wiring layer 183 is stacked on the first wiring layer 181 and the second wiring layer 182 as in the embodiment shown in FIG. There is an advantage that you can.

(Embodiment 4 of electro-optical device)
In the embodiment shown in FIGS. 6 and 14, the routing wiring 16 that is electrically connected to the scanning line 25 is configured such that a part of the wiring layer is covered with the sealing material 30, but other wiring, for example, A similar configuration can be adopted for the data line 11. That is, the main wiring 11a made of chromium among the data lines 11 is formed in the region covered with the sealing material 30 and the liquid crystal 35, while the auxiliary wiring 11b made of ITO having high corrosion resistance is covered with the sealing material 30 and the liquid crystal 35. You may form over the full length of the said data line 11 so that it may also enter into the overhang | projection area | region 10a in addition to the inside of a broken area. Note that the wiring in this case, that is, the data line 11 is not electrically connected to any wiring on the counter substrate 20. That is, the “wiring” in the present invention does not necessarily need to be electrically connected to wiring formed on another substrate.

(Fifth embodiment of electro-optical device)
In the embodiment shown in FIG. 8B and FIG. 15, the wiring layers 181, 182, and 183 constituting the routing wiring 16 are common to elements in the display region V, that is, the TFD element 13, the pixel electrode 12, and the like. Formed by layers of However, the electro-optical device according to the present invention does not always have to be configured in this way, and the lead wiring 16 may be formed by a process separate from the elements in the display region V. good.

  That is, in the embodiment shown in FIG. 8B and FIG. 15, the first wiring layer 181 is formed of tantalum, the second wiring layer 182 is formed of chromium, and the third wiring layer 183 is formed of ITO. However, the material of each wiring layer is not limited to these. Of course, even when each wiring layer is formed of a material different from the example in the embodiment shown in FIG. 8B or the like, a wiring layer having a high ionization tendency, that is, a low corrosion resistance is selected from these wiring layers. It is desirable to form in a region overlapping with the sealing material 30 and to form another wiring layer corresponding to the entire length of the routing wiring 16.

(Sixth embodiment of electro-optical device)
In the embodiment shown in FIGS. 6 and 14, the element substrate 10 on which the TFD elements 13 are formed is located on the observation side, and the counter substrate 20 on which the scanning lines 25 are formed is located on the back side. However, conversely, the element substrate 10 may be located on the back side, and the counter substrate 20 may be located on the observation side. In this case, the reflective layer 21 in FIG. 3 may be formed on the element substrate 10 instead of on the counter substrate 20.

  In the embodiment shown in FIG. 3, the color filter 22 and the light shielding layer 23 are formed on the counter substrate 20 that is the substrate located on the back side. However, these elements are formed on the substrate located on the observation side. Also good. Or it is good also as a structure which does not provide the color filter 22 and the light shielding layer 23, and performs only a monochrome display. That is, in the embodiment shown in FIG. 3, the element substrate 10 corresponds to the “first substrate” in the present invention, and the counter substrate 20 corresponds to the “second substrate” in the present invention. Each of the “first substrate” and the “second substrate” may be a substrate located on either the observation side or the back side, and elements such as the TFD element 13, the reflective layer 21, the color filter 22, and the like are necessary. Depending on the substrate, it may be provided on any substrate.

  In the embodiment shown in FIG. 3, the reflective liquid crystal device that performs only the reflective display is illustrated. However, the present invention can also be applied to a transmissive liquid crystal device that performs only the so-called transmissive display. For example, in order to change the structure of FIG. 3 to the transmission type, incident light from the back side passes through the liquid crystal 35 and is emitted to the observation side without providing the reflective layer 21 on the counter substrate 20 that is the back side substrate. What is necessary is just to be the structure to do.

  Furthermore, the present invention can also be applied to a so-called transflective liquid crystal device capable of both reflective display and transmissive display. In this case, for example, in FIG. 3, instead of the reflective layer 21, a reflective layer having an opening for each display dot 50 or a part of the light incident on the surface is reflected and the other part is transmitted. A semi-transmissive reflective layer (so-called half mirror) having a structure to be provided may be provided, and a lighting device may be provided on the back side of the liquid crystal device.

  Furthermore, in the embodiments described in FIG. 6 and FIG. 14, an active matrix type liquid crystal device using a TFD element which is a two-terminal switching element is illustrated, but instead of this, a TFT (Thin Film Transistor) element It goes without saying that the present invention can also be applied to an active matrix liquid crystal device using a three-terminal switching element represented by the above and a passive matrix liquid crystal device having no switching element.

  As is clear from the above, a wiring pattern having a pattern extending from the region of the substrate supporting the liquid crystal facing the sealing material, that is, the region overlapping the sealing material, across the outer periphery of the sealing material to the outside thereof is provided. The present invention can be applied to any liquid crystal device regardless of the mode of other components.

(Embodiment of electronic device)
Next, electronic equipment using the electro-optical device according to the invention will be described. FIG. 16A shows a case where the present invention is applied to a mobile personal computer, that is, a portable personal computer, a so-called notebook personal computer, particularly as a display portion thereof.

  A personal computer 71 shown here includes a main body 712 provided with a keyboard 711 and a display 713 to which the electro-optical device according to the invention is applied. The electro-optical device used in the personal computer 71 is preferably a transflective electro-optical device capable of not only reflective display but also transmissive display in order to ensure visibility even in a dark place.

  Next, FIG. 16B shows a case where the electro-optical device according to the present invention is used as a display unit of a mobile phone. In the figure, the mobile phone 72 has a plurality of operation buttons 721, a mouthpiece 722, a mouthpiece 723, and a display unit 724. The display unit 724 can be configured using the electro-optical device according to the invention. In order to ensure visibility in a dark place, a transflective electro-optical device is preferably used as the display portion 724.

  Note that examples of the electronic apparatus to which the electro-optical device according to the invention can be applied include a liquid crystal television and a viewfinder in addition to the personal computer shown in FIG. 16A and the cellular phone shown in FIG. Type video tape recorders, monitor direct-view video tape recorders, car navigation devices, pagers, electronic notebooks, calculators, word processors, workstations, videophones, POS terminals, digital still cameras, and the like. A projector using the electro-optical device according to the present invention as a light valve is also considered as an electronic apparatus according to the present invention.

  As described above, according to the electro-optical device according to the present invention, the corrosion of the wiring formed on the substrate can be suppressed. Therefore, in an electronic apparatus using the electro-optical device, a conduction failure or the like is avoided. High reliability.

(Seventh embodiment of electro-optical device)
FIG. 17 shows an embodiment in which the present invention is applied to an active matrix EL (Electro Luminescence) device 110 that is an example of an electro-optical device. FIG. 18 shows a cross-sectional structure of the EL device 110 along the line KK ′ in FIG.

  In these drawings, on a substrate 100, a region where a plurality of pixels are formed, that is, a display region V, a gate side driver circuit 102, and a source side driver circuit 103 are formed. Various wirings from the respective driving circuits reach the FPC 111 via the input / output wirings 112, 113, and 114, and are connected to an external device via the FPC 111. The FPC 111 is connected to the edge of the substrate 100 by an ACF (Anisotropic Conductive Film) 115.

  At this time, the housing 104 is provided so as to surround at least the display region V, preferably so as to surround the drive circuits 102 and 103 and the display region V. The housing 104 has a shape having a recess whose inner height dimension is larger than the height of the display area V or a sheet shape having no such recess, and is sealed in cooperation with the substrate 100 by an adhesive 105. It is fixed to the substrate 100 so as to form a space. At this time, the EL element is completely enclosed in the sealed space, and is completely shielded from the outside air.

  A plurality of housings 104 can be provided. The material of the housing 104 is preferably an insulating material such as glass or polymer. For example, amorphous glass such as borosilicate glass and quartz, crystallized glass, ceramic glass, organic resin (for example, acrylic resin, styrene resin, polycarbonate resin, epoxy resin, etc.), silicone resin Etc. If the adhesive 105 is an insulating material, a metal material such as a stainless alloy can be used.

  As the adhesive 105, an adhesive such as an epoxy resin or an acrylate resin can be used. A thermosetting resin or a photocurable resin can also be used as an adhesive. However, it is necessary that the material does not transmit oxygen and moisture as much as possible.

  It is desirable to fill an air gap 106 between the housing 104 and the substrate 100 with an inert gas such as argon, helium, nitrogen, or the like. In addition to the gas, an inert liquid such as liquid fluorinated carbon represented by perfluoroalkane can also be used. It is also effective to put a desiccant in the gap 106. As such a desiccant, for example, barium oxide can be considered.

  As shown in FIG. 17, a plurality of independent display dots 50 are arranged in a matrix in the display region V. As shown in FIG. 18, all of these display dots 50 have a protective electrode 249 as a common electrode. The protective electrode 249 is connected to a part of the input wiring 113 in a region 108 on the inner region of the housing 104 and closer to the FPC 111. A predetermined voltage, for example, a ground potential, for example, 0 V, is applied to the protective electrode 249 through the FPC 111 and the input / output wiring 113.

FIG. 19 shows two display dots 50 adjacent to each other according to the arrow L in FIG. FIG. 20 shows an electrical circuit configuration in the display dots as an equivalent circuit diagram. FIG. 21 shows a cross-sectional structure of an active element portion for driving an EL element according to the line MM ′ in FIG.
As shown in FIGS. 19 and 20, each display dot 50 includes a switching TFT 201 that functions as a switching element and a current control TFT 202 that functions as a current control element that controls the amount of current flowing to the EL element. Have. The source of the switching TFT 201 is connected to the source wiring 221, its gate is connected to the gate wiring 211, and its drain is connected to the gate of the current control TFT 202.

  The source of the current control TFT 202 is connected to the current supply line 212 and the drain thereof is connected to the EL element 203. Note that the EL element 203 is a light-emitting element having a structure in which an EL layer including a light-emitting layer is sandwiched between an anode and a cathode. In FIG. 19, the pixel electrode 246 is shown as a substantially rectangular anode, an EL layer 247 including a light emitting layer is stacked on the pixel electrode 246, and a cathode as a common electrode common to each display dot 50 on the EL layer 247. (Not shown) are stacked, and the EL element 203 is formed by this stacked structure.

  In FIG. 21, an insulating film 206 serving as a base is formed on the substrate 100. The substrate 100 is formed of, for example, a glass substrate, a glass ceramic substrate, a quartz substrate, a silicon substrate, a ceramic substrate, a metal substrate, a plastic substrate, a plastic film, or the like.

  The base film 206 is particularly effective when a substrate containing mobile ions or a conductive substrate is used. However, when a quartz substrate is used as the substrate 100, the base film 206 is not necessarily provided. As the base film 206, for example, an insulating film containing silicon (that is, silicon) may be used. Further, it is desirable that the base film 206 has a heat dissipation function for dissipating heat generated in the TFT.

  In the present embodiment, two TFTs in one display dot, specifically, a switching TFT 201 that functions as a switching element, and a current control TFT 202 that functions as a current control element that controls the amount of current flowing to the EL element. And are provided. In the present embodiment, these TFTs are both formed as n-channel TFTs in this embodiment, but both or either of them can be p-channel TFTs.

  The switching TFT 201 includes an active layer including five types of elements: a source region 213, a drain region 214, LDD (Lightly Doped Drain) regions 215a, 215b, 215c, and 215d, a high-concentration impurity region 216, and channel formation regions 217a and 217b. Have. The switching TFT 201 includes a gate insulating film 218, gate electrodes 219 a and 219 b, a first interlayer insulating film 220, a source wiring 221, and a drain wiring 222.

  As shown in FIG. 19, the gate electrodes 219a and 219b have a double gate structure in which the gate electrodes 219a and 219b are electrically connected by a gate wiring 211 formed of another material having a lower resistance than the gate electrodes 219a and 219b. . Of course, not only a double gate structure but also a so-called multi-gate structure such as a triple gate structure, that is, a structure including an active layer having two or more channel formation regions connected in series may be used.

  The active layer is formed of a semiconductor film including a crystal structure, that is, a single crystal semiconductor film, a polycrystalline semiconductor film, a microcrystalline semiconductor film, or the like. For the gate electrodes 219a and 219b, the source wiring 221 and the drain wiring 222, any kind of conductive film can be used. Further, in the switching TFT 201, the LDD regions 215a to 215d are provided so as not to overlap the gate electrodes 219a and 219b with the gate insulating film 218 interposed therebetween. Such a structure is very effective in reducing the off-current value.

  Next, in FIG. 21, the current control TFT 202 includes an active layer including four elements of a source region 231, a drain region 232, an LDD region 233, and a channel formation region 234, a gate insulating film 218, a gate electrode 235, , First interlayer insulating film 220, source wiring 236, and drain wiring 237. Note that although the gate electrode 235 has a single gate structure, a multi-gate structure may be used instead.

  In FIG. 21, the drain of the switching TFT 201 is connected to the gate of the current control TFT. Specifically, the gate electrode 235 of the current control TFT 202 is electrically connected via the drain region 214 of the switching TFT 201 and the drain wiring 222. The source wiring 236 is connected to the current supply line 212.

  The current control TFT 202 supplies a current for causing the EL element 203 to emit light, and at the same time controls the supply amount to enable gradation display. For this reason, it is necessary to take measures against deterioration by hot carrier injection so as not to deteriorate even when a current is passed. In addition, when displaying black, the current control TFT 202 is turned off. However, if the off-current value is high, a clear black display cannot be obtained and the contrast is lowered. Therefore, it is desirable to suppress the off-current value.

  In FIG. 21, a first passivation film 241 is formed on the first interlayer insulating film 220. For example, the first passivation film 241 is formed of an insulating film containing silicon. The first passivation film 241 has a function of protecting the formed TFT from alkali metal and moisture. The EL layer finally provided above the TFT contains an alkali metal such as sodium. That is, the first passivation film 241 functions as a protective layer that prevents these alkali metals from entering the TFT side.

  In addition, if the first passivation film 241 has a heat dissipation function, thermal degradation of the EL layer can be prevented. In the structure of FIG. 21, since light is emitted to the substrate 100, the first passivation film 241 needs to have a light-transmitting property. Further, in the case where an organic material is used for the EL layer, it is preferable not to use an insulating film that easily releases oxygen because the EL layer deteriorates due to bonding with oxygen.

A second interlayer insulating film 244 is formed on the first passivation film 241 so as to cover each TFT. The second interlayer insulating film 244 has a function of flattening a step formed by the TFT. As the second interlayer insulating film 244, for example, an organic resin film such as polyimide, polyamide, or acrylic can be used. Of course, if sufficient planarization is possible, an inorganic film can also be used.
Since the EL layer is very thin, if there is a step on the surface on which the EL layer is formed, a light emission failure may occur. Therefore, flattening the step due to the TFT by the second interlayer insulating film 244 is important with respect to the normal functioning of the EL layer formed later.

A second passivation film 245 is formed on the second interlayer insulating film 244.
The second passivation film 245 functions to prevent permeation of alkali metal diffusing from the EL element. The second passivation film 245 can be formed of the same material as the first passivation film 241. In addition, the second passivation film 245 desirably functions as a heat dissipation layer that releases heat generated in the EL element, and this heat dissipation function can prevent heat from being accumulated in the EL element.

  A pixel electrode 246 is formed on the second passivation film 245. The pixel electrode 246 is formed of a transparent conductive film, for example, and functions as an anode of the EL element. The pixel electrode 246 has a contact hole, that is, an opening formed in the second passivation film 245, the second interlayer insulating film 244, and the first passivation film 241, and then the drain wiring 237 of the current control TFT 202 in the formed contact hole. Formed to connect to

  Next, an EL layer 247 is formed over the pixel electrode 246. The EL layer 247 is formed with a single layer structure or a multilayer structure, but generally has a multilayer structure in many cases. In the EL layer 247, the layer directly in contact with the pixel electrode 246 includes a hole injection layer, a hole transport layer, or a light emitting layer.

  Now, if a two-layer structure of a hole transport layer and a light emitting layer is adopted, the hole transport layer can be formed of, for example, polyphenylene vinylene. As the light emitting layer, cyanopolyphenylene vinylene can be used for the red light emitting layer, polyphenylene vinylene can be used for the green light emitting layer, and polyphenylene vinylene or polyalkylphenylene can be used for the blue light emitting layer.

  Next, the cathode 248 is formed on the EL layer 247 formed as described above, and the protective electrode 249 is further formed thereon. These cathode 248 and protective electrode 249 are formed by, for example, a vacuum evaporation method. Note that when the cathode 248 and the protective electrode 249 are continuously formed without being released to the atmosphere, deterioration of the EL layer 247 can be suppressed. Note that a light-emitting element formed by the pixel electrode 246, the EL layer 247, and the cathode 248 is an EL element 203.

  As the cathode 248, a material containing magnesium (Mg), lithium (Li), or calcium (Ca) having a low work function can be used. The protective electrode 249 is provided to protect the cathode 248 from external moisture and the like. For example, a material containing aluminum (Al) or silver (Ag) can be used. The protective electrode 249 also has a heat dissipation effect.

  The structure shown in FIG. 21 is a monochromatic light-emitting structure in which one type of EL element corresponding to any of R, G, and B is formed corresponding to each display dot 50. However, as a light emitting method, in addition to such a monochromatic light emitting method, a method combining a white light emitting EL element and a color filter, a light emitting method combining a blue or blue-green light emitting EL element and a phosphor, Alternatively, color display can be performed using various methods such as a method in which EL elements corresponding to R, G, and B are stacked using a transparent electrode as a cathode. Of course, it is also possible to perform black and white display by forming a white light emitting EL layer as a single layer.

  A third passivation film 250 is formed on the protective electrode 249. The third passivation film 250 functions to protect the EL layer 247 from moisture, and may perform a heat dissipation function in the same manner as the second passivation film 245 if necessary. Note that in the case where an organic material is used for the EL layer, it is preferable that an insulating film that easily releases oxygen is not used as the third passivation film 250 because the organic material may be deteriorated by bonding with oxygen.

  In this embodiment, as shown in FIG. 17, not only the display region V but also the TFTs having the optimum structure are formed directly on the substrate 100 not only for the drive circuits 102 and 103, thereby regarding the operation. High reliability is achieved. Note that the driving circuit here includes a shift register, a buffer, a level shifter, a sampling circuit, and the like. In the case of performing digital driving, a signal conversion circuit such as a D / A converter can be included.

  In addition to the circuit configuration such as the display region V and the drive circuits 102 and 103, logic circuits such as a signal dividing circuit, a D / A converter circuit, an operational amplifier circuit, and a γ correction circuit are directly formed on the substrate 100. be able to. Furthermore, a memory portion, a microprocessor, or the like can be formed directly on the substrate 100.

  Since the EL device 110 according to this embodiment is configured as described above, in FIG. 17, one of the scanning signal and the data signal is supplied to the gate wiring 211 by the gate side driving circuit 102, and the source side driving circuit 103 The other of the scanning signal and the data signal is supplied to the source wiring 221. On the other hand, the current supply line 212 supplies a current for causing the EL element to emit light to the current control TFT 202 in each display dot 50.

  Appropriate ones of the plurality of display dots 50 arranged in a matrix in the display area V are individually selected based on the data signal, and the switching TFT 201 is turned on during the selection period to write the data voltage. In the non-selection period, the TFT 201 is turned off to hold the voltage. As a result of such switching and storing operations, appropriate ones of the plurality of display dots 50 selectively emit light, and by the collection of the light emitting points, the back side of the sheet of FIG. 17, that is, the direction indicated by the arrow Q in FIG. Images such as letters, numbers, figures, etc. are displayed.

  In FIG. 17, a signal is sent to the source side driver circuit 103 through the wiring 112. In addition, a signal is supplied to the gate side driver circuit 102 through the wiring 113. In addition, current is supplied to the current supply line 212 through the wiring 114. In the present embodiment, the wiring boundary 10b is set in the vicinity of the side corresponding to the location where the wirings 112, 113, 114 are drawn out of the housing 104 that shields the inside of the EL device 110 from the outside in a sealed state.

  Regarding the wirings 112, 113, and 114 described above, the cross-sectional structure of the portion existing on the wiring lead-out side (that is, the left side in FIG. 17) as viewed from the wiring boundary 10b is as shown in FIG. It has a two-layer structure of one wiring layer 181 and a third wiring layer 183 stacked thereon. On the other hand, as shown in FIG. 8C, the portion existing on the display region V side as viewed from the wiring boundary 10b has a first wiring layer 181, a second wiring layer 182 stacked thereon, It has a three-layer structure of the third wiring layer 183 laminated thereon. That is, the layer configuration of the wirings 112, 113, and 114 is different between the inside and the outside of the wiring boundary 10b.

  For example, considering the case where the second wiring layer 182 that exists only inside the wiring boundary 10b (that is, the display region V side) is formed of a material that has low resistance and is easily corroded, such a second wiring layer 182 is connected to the wiring. Therefore, the wiring resistance value can be kept low, so that the EL device 110 can perform stable image display.

  Moreover, even when the second wiring layer 182 is formed using such a material that easily corrodes, the region where the second wiring layer 182 is provided is limited to the region shielded from the outside by the housing 104. Therefore, the second wiring layer 182 that is easily corroded is not exposed to the outside air, and therefore, it is reliably prevented that the second wiring layer 182 and thus the entire wiring is corroded to cause display defects.

(Other embodiments)
The present invention has been described with reference to the preferred embodiments. However, the present invention is not limited to the embodiments, and various modifications can be made within the scope of the invention described in the claims.

For example, the electro-optical device is not limited to a liquid crystal device and an EL device, and any device that needs to form wiring on a substrate, for example, an electrophoretic device in which a dispersion medium and electrophoretic particles are sealed between substrates can be considered.
(The invention's effect)

  As described above, according to the present invention, the corrosion of the wiring formed on the substrate can be suppressed.

1 is an equivalent circuit diagram showing an electrical configuration of an active matrix liquid crystal device that is a liquid crystal device that is an example of an electro-optical device in which the present invention can be implemented, and in particular uses a TFD element. 1 shows an embodiment in which the present invention is applied to a liquid crystal device which is an example of an electro-optical device, wherein (a) is a perspective view of the liquid crystal device when viewed from the observation side, and (b) is a back side. It is a perspective view of the liquid crystal device when viewed from the side. It is sectional drawing which shows the cross-section of a liquid crystal device according to CC 'line in Fig.2 (a). It is a perspective view which shows the structure in the display area in the liquid crystal device shown to Fig.2 (a). (A) is a top view which shows one pixel electrode and one TFD element in FIG. 4, (b) is sectional drawing according to the EE 'line in (a), (c) is (a It is sectional drawing according to the FF 'line | wire in (). FIG. 3 is a plan sectional view of the liquid crystal device shown in FIG. It is sectional drawing according to the GG 'line | wire in FIG. (A) is a top view which expands and shows the part shown by the arrow P in FIG. 6, (b) is sectional drawing according to the HH 'line in (a), (c) is (a). It is sectional drawing according to the II 'line in (d), (d) is sectional drawing according to the JJ' line in (a). FIG. 5 is a diagram illustrating a manufacturing method related to a TFD element in the order of steps, which is an embodiment of a method for manufacturing an electro-optical device according to the invention. It is process drawing which shows the process relevant to the process shown in FIG. FIG. 5 is a diagram illustrating a manufacturing method related to the lead wiring in the order of steps, which is an embodiment of the method for manufacturing the electro-optical device according to the invention. FIG. 10 is a diagram illustrating a method for manufacturing an electro-optical device according to an embodiment of the present invention, and illustrating a manufacturing method related to elements provided on a counter substrate in order of steps. FIG. 13 is a diagram illustrating a process subsequent to FIG. 12. FIG. 11 is a plan sectional view showing another embodiment when the present invention is implemented in a liquid crystal device which is an example of an electro-optical device. FIG. 15 is a cross-sectional view showing a layer structure of the lead wiring in the embodiment shown in FIG. 14. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an embodiment of an electronic device according to the present invention, wherein (a) is a perspective view showing a personal computer that is an example of the electronic device, and (b) is a perspective view showing a mobile phone that is another example of the electronic device. is there. FIG. 6 is a plan sectional view showing an embodiment when the present invention is implemented in an EL device which is another example of an electro-optical device. It is sectional drawing which shows the cross-section of an EL apparatus according to the KK 'line | wire in FIG. It is a top view which expands and shows the display dot part shown by the arrow L in FIG. FIG. 20 is an electrical equivalent circuit diagram corresponding to the structure of FIG. 19. FIG. 20 is a cross-sectional view showing a cross-sectional structure of a TFT according to the line MM ′ in FIG.

Explanation of symbols

1 Liquid crystal device (electro-optical device)
10 Element substrate (first substrate)
10a Overhang area 10b Wiring boundary 11 Data line 11a Main wiring 11b Auxiliary wiring 11c Second metal film,
12 Pixel electrode 13 TFD element (thin film diode)
13a First metal film 13b Insulating film 13c Second metal films 16, 161, 162 Lead wiring 16a Conducting portion 16b Extending portion 17 External connection terminal 20 Counter substrate (second substrate)
21 Reflective layer 22 Color filter 23 Light shielding layer 24 Overcoat layer 25 Scan line 25a Conducting portion 26 Alignment film 30 Sealing material 32 Conductive particle 35 Liquid crystal 40a First Y driver IC
40b 2nd Y driver IC
41 X driver IC
50 display dots 51 liquid crystal display element 56 alignment film 57 peripheral light shielding layer 131 first TFD element 132 second TFD element 181 first wiring layer 182 second wiring layer 183 third wiring layer

Claims (8)

In an electro-optical device having a first substrate and a second substrate arranged to face each other, and liquid crystal is sandwiched between the first substrate and the second substrate.
A sealing material surrounding the liquid crystal;
A routing wiring routed along one side of the first substrate and toward the other side intersecting with the one side;
The routing wiring is
A first wiring layer formed over both the inner region of the sealing material and the outer region of the sealing material;
A second wiring layer formed to extend in an inner region of the sealing material and terminate in a region overlapping the sealing material,
The electro-optical device, wherein the second wiring layer is made of chromium or aluminum, which is a conductive material having lower resistance and higher ionization tendency than the first wiring layer.   2. The electro-optical device according to claim 1, wherein one end of the routing wiring in the outer region of the sealing material is connected to an external connection circuit.   The electro-optical device according to claim 1, further comprising an electrode formed on the second substrate, wherein the electrode is electrically connected to the lead wiring on the first substrate. In claim 1 or claim 2,
A routing wiring formed on the second substrate;
The electro-optical device, wherein the routing wiring on the first substrate is electrically connected to the routing wiring on the second substrate.   The electro-optical device according to claim 4, wherein the routing wiring on the first substrate and the routing wiring on the second substrate are conducted through conductive particles dispersed in the sealing material.   6. The width of a portion of the routing wiring formed on the first substrate formed in an outer region of the sealing material is formed in a region overlapping with the sealing material according to claim 1. An electro-optical device characterized in that it is wider than the width of the part.   An electronic apparatus comprising the electro-optical device according to claim 1. A liquid crystal is provided between the first substrate and the second substrate bonded together through the sealing material, and is routed over both the inner region of the sealing material and the outer region of the sealing material in the first substrate. A method of manufacturing an electro-optical device in which wiring is formed,
A first wiring layer forming step of forming a first wiring layer constituting the routing wiring over an inner region of the sealing material and an outer region of the sealing material in the first substrate;
Forming a second wiring layer constituting the routing wiring so as to extend to an inner region of the sealing material of the first substrate and to terminate in a region overlapping the sealing material;
A bonding step of bonding the first substrate and the second substrate through the sealing material,
The method of manufacturing an electro-optical device, wherein the second wiring layer is made of chromium or aluminum, which is a conductive material having lower resistance and higher ionization tendency than the first wiring layer.

Images