JP2005079379A - Terminal electrode, semiconductor device, semiconductor module, electronic equipment, method of manufacturing terminal electrode, and method of manufacturing semiconductor module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To increase the joint area of a projecting electrode without increasing the number of steps. <P>SOLUTION: A protective film 4 is provided on an electrode pad 2 across the pad 2, and the recessed section 7 corresponding to the shape of the protective film 4 is formed on the surface of the projecting electrode 6 by electroless plating. Then the projecting electrode 6 is joined to a terminal electrode in a state where the terminal electrode is fitted in the recessed section 7 of the projecting electrode 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a terminal electrode, a semiconductor device, a semiconductor module, an electronic device, a method for manufacturing a terminal electrode, and a method for manufacturing a semiconductor module, and is particularly suitable for application to a method for bonding terminal electrodes.

In a conventional semiconductor device, there is a method of forming a protruding electrode on an electrode pad using electroless Ni plating. Then, solder printing or solder dip is used to form a solder layer on the protruding electrode, and the protruding electrode is bonded to the lead terminal via the solder layer.
Further, for example, Patent Document 1 discloses a method of forming a concave portion into which the lead is inserted on the upper surface of the bump electrode in order to prevent a positional shift when the lead and the bump electrode are joined.
JP-A-2-140935

However, when the protruding electrode is formed using electroless Ni plating, the protruding electrode becomes hard. For this reason, the load at the time of joining becomes difficult to absorb with the protruding electrode, and there is a problem that cracks are easily formed under the electrode pad.
Further, the method disclosed in Patent Document 1 has a problem in that it is necessary to form a resist pattern for raising the periphery of the bump electrode, which increases the number of processes.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a terminal electrode, a semiconductor device, a semiconductor module, an electronic device, a method of manufacturing a terminal electrode, and a semiconductor module that can increase the bonding area of protruding electrodes while suppressing the complexity of the manufacturing process It is to provide a manufacturing method.

In order to solve the above-described problem, according to a terminal electrode according to an aspect of the present invention, an electrode pad, a protective film disposed so as to cross the electrode pad, and the protection formed on the electrode pad are provided. A concave electrode corresponding to the arrangement position of the film is provided with a protruding electrode provided on the surface.
Thus, by forming the protruding electrode using electroless plating, growth on the protective film can be suppressed, and a recess disposed so as to cross the surface of the protruding electrode can be provided. For this reason, when joining the projecting electrode to the lead terminal, the lead terminal can be fitted into the recess of the projecting electrode, and the joining area of the projecting electrode can be increased while suppressing the complexity of the manufacturing process. It becomes. As a result, even when the protruding electrode is made of a hard material, it is possible to easily absorb the load at the time of bonding by the protruding electrode, and it is possible to prevent cracks from entering the electrode pad.

Moreover, according to the terminal electrode which concerns on 1 aspect of this invention, it formed on the electrode pad formed on the insulating layer, the opening part which divides the said electrode pad, and the said electrode pad, and respond | corresponded to the said opening part And a concave electrode provided on the surface of the concave electrode.
Thus, by forming the protruding electrode using electroless plating, growth on the opening can be suppressed, and a recess disposed so as to cross the surface of the protruding electrode can be provided. For this reason, when joining the projecting electrode to the lead terminal, the lead terminal can be fitted into the recess of the projecting electrode, and the joining area of the projecting electrode can be increased while suppressing the complexity of the manufacturing process. It becomes. As a result, even when the protruding electrode is made of a hard material, it is possible to easily absorb the load at the time of bonding by the protruding electrode, and it is possible to prevent cracks from entering the electrode pad.

In addition, according to the semiconductor device of one embodiment of the present invention, the semiconductor chip, the electrode pad formed over the semiconductor chip, the protective film disposed across the electrode pad, and the electrode pad And a protruding electrode formed on the surface with a recess corresponding to the position of the protective film.
As a result, when forming the protruding electrode, it is possible to provide a recess disposed across the surface of the protruding electrode, and it is possible to increase the bonding area of the protruding electrode while suppressing the complexity of the manufacturing process. Become. For this reason, even when the protruding electrode is made of a hard material, it is possible to easily absorb the load at the time of bonding with the protruding electrode, and it is possible to prevent cracks from entering the electrode pad.

  Moreover, according to the semiconductor module which concerns on 1 aspect of this invention, a semiconductor chip, the electrode pad formed on the said semiconductor chip, the protective film arrange | positioned across the said electrode pad, and on the said electrode pad A protruding electrode formed and provided with a concave portion corresponding to the position of the protective film on the surface, a terminal electrode joined to the protruding electrode in a state fitted in the concave portion, and the terminal electrode were provided And a wiring board.

Accordingly, when the protruding electrode is bonded to the terminal electrode, the terminal electrode can be fitted into the concave portion of the protruding electrode, and the bonding area of the protruding electrode can be increased. For this reason, even when the protruding electrode is made of a hard material, it is possible to easily absorb the load at the time of bonding by the protruding electrode, and to prevent cracks from entering the electrode pad.
The semiconductor module according to one aspect of the present invention is characterized in that the tip of the terminal electrode provided on the wiring board is sharpened.

Thereby, the shape of the tip of the terminal electrode can be made to correspond to the shape of the recess provided on the surface of the protruding electrode. For this reason, it becomes possible to increase the contact area between the tip of the terminal electrode and the recess of the protruding electrode, making it possible to easily absorb the load at the time of bonding with the protruding electrode, and making it difficult to crack under the electrode pad. It becomes possible.
According to the electronic device of one aspect of the present invention, a semiconductor chip, an electrode pad formed over the semiconductor chip, a protective film disposed across the electrode pad, and the electrode pad A protruding electrode formed and provided with a concave portion corresponding to the position of the protective film on the surface, a terminal electrode joined to the protruding electrode in a state fitted in the concave portion, and the terminal electrode were provided A wiring board and an electronic component connected to the semiconductor chip through the wiring board are provided.

Thereby, it becomes possible to join the protruding electrode to the terminal electrode while fitting the terminal electrode into the concave portion of the protruding electrode. For this reason, it is possible to absorb the excessive weight at the time of joining to the protruding electrode while suppressing an increase in the mounting area, and it is possible to improve the reliability of the electronic device while making the electronic device smaller and lighter. .
According to the method for manufacturing the terminal electrode according to one aspect of the present invention, the step of forming the electrode pad on the insulating layer, the step of forming the protective film on the electrode pad, and etching the protective film A step of exposing the surface of the electrode pad so that the protective film crosses the electrode pad; and a step of forming a protruding electrode on the electrode pad by electroless plating. To do.

Thus, by changing the pattern of the protective film formed on the electrode pad, it is possible to form a recess that is disposed across the surface of the protruding electrode. For this reason, it is possible to increase the bonding area of the protruding electrode without increasing the number of steps, and it is possible to easily absorb the load during bonding with the protruding electrode while suppressing a decrease in throughput.
In addition, according to the method for manufacturing a semiconductor module according to one aspect of the present invention, the step of aligning the semiconductor chip and the wiring substrate, in which the recess corresponding to the position of the protective film is formed on the surface of the protruding electrode, A step of bonding the protruding electrode to the terminal electrode of the wiring board in a state in which the terminal electrode of the wiring board is fitted in the concave portion on the surface of the protruding electrode.

  Accordingly, it is possible to increase the bonding area of the protruding electrode without increasing the number of processes, and it is possible to easily absorb the load during bonding with the protruding electrode while suppressing a decrease in throughput.

Hereinafter, a method for manufacturing a terminal electrode and a semiconductor module according to an embodiment of the present invention will be described with reference to the drawings.
1A, 1C, 1D, and 2 are cross-sectional views illustrating a method of manufacturing a semiconductor module according to the first embodiment of the present invention, and FIG. 3 is a plan view showing a configuration of a film 3. FIG.

  In FIG. 1A, an electrode pad 2 is provided on a semiconductor chip 1, and the surface of the semiconductor chip 1 provided with the electrode pad 2 is covered with a protective film 3. Note that an active element such as a transistor or a passive element such as a capacitor can be formed on the semiconductor chip 1. As the protective film 3, for example, a silicon oxide film, a silicon nitride film, a polyimide film, or the like can be used. Here, for example, as shown in FIG. 1B, the protective film 3 has an opening 3 a that exposes the surface of the electrode pad 2, and crosses the electrode pad 2 on the electrode pad 2. A protective film 4 is provided.

In addition, when forming the protective film 4 arrange | positioned so that the electrode pad 2 may be crossed, it can carry out collectively with formation of the opening part 3a which exposes the surface of the electrode pad 2 at the time of the etching process of the protective film 3. FIG.
Next, as shown in FIG. 1C, a photosensitive resin layer 5 is applied on the semiconductor chip 1 on which the protective films 3 and 4 are formed. The photosensitive resin layer 5 can be formed by using, for example, spin coating, curtain coating, screen printing, an inkjet method, or the like. Then, by performing exposure / development of the photosensitive resin layer 5, an opening 5 a that exposes the surface of the electrode pad 2 is formed in the photosensitive resin layer 5.

  Next, as shown in FIG.1 (d), the protruding electrode 6 arrange | positioned on the electrode pad 2 is formed in the opening part 5a by using electroless plating. As a material for the protruding electrode 6, for example, nickel Ni, gold Au, copper Cu, or the like can be used. Further, a cap layer such as copper Cu, tin Sn or gold Au may be formed on the protruding electrode 6 made of nickel Ni, and a solder layer is formed via the cap layer formed on the protruding electrode 6. You may make it form.

  Here, in electroless plating, metal film formation proceeds on the electrode pad 2 and metal film formation is suppressed on the protective film 4, so that the protruding electrode 6 becomes depressed on the protective film 4. For this reason, by forming the protruding electrode 6 on the electrode pad 2 using electroless plating, the concave portion 7 corresponding to the shape of the protective film 4 on the electrode pad 2 can be formed on the surface of the protruding electrode 6. . In addition, the depth of the recessed part 7 can be set so that it may become smaller than the height of the terminal electrode 12 of Fig.2 (a).

  Next, as shown in FIG. 2A, the periphery of the protruding electrode 6 formed on the electrode pad 2 is exposed by removing the photosensitive resin layer 5 from the semiconductor chip 1. Then, the semiconductor chip 1 and the wiring substrate 11 are aligned so that the protruding electrode 6 and the terminal electrode 12 are arranged to face each other. In addition, as the wiring board 11, for example, a double-sided board, a multilayer wiring board, a build-up board, a tape board, or a film board can be used, and as the material of the wiring board 11, for example, polyimide resin, glass epoxy resin, BT resin, aramid and epoxy composite, ceramic, or the like can be used. Moreover, as the terminal electrode 12, copper Cu etc. which were coat | covered with gold | metal | money Au, tin Sn, etc. can be used, for example. Moreover, you may make it sharpen the front-end | tip of the terminal electrode 12 corresponding to the shape of the recessed part 7 of the protrusion electrode 6, for example, the cross-sectional shape of the terminal electrode 12 can be made into a triangular shape.

Next, as shown in FIG. 2B, the semiconductor chip 1 is bonded to the wiring substrate 11 by joining the protruding electrode 6 to the terminal electrode 12 in a state where the terminal electrode 12 is fitted in the recess 7 of the protruding electrode 6. Flip chip mounting on top. Then, the semiconductor chip 1 is resin-sealed by injecting a sealing resin 13 into the surface of the semiconductor chip 1 mounted on the wiring substrate 11.
Thereby, it becomes possible to increase the bonding area of the protruding electrode 6 by fitting the terminal electrode 12 into the recess 7 of the protruding electrode 6. For this reason, even when the protruding electrode 6 is made of a hard material such as nickel Ni, the protruding electrode 6 can easily absorb the load at the time of bonding, and the semiconductor chip 1 under the electrode pad 2 is hardly cracked. It becomes possible to do.

  When the protruding electrode 6 is bonded to the terminal electrode 12, an ACF (Anisotropic Conductive Film) junction, an NCF (Nonconductive Film) junction, an ACP (Anisotropic Conductive Paste) junction, an NCP (Nonconductive pressure junction), or the like. Alternatively, metal bonding such as solder bonding or alloy bonding may be used.

3 (a), 3 (c), 3 (d) and 4 are sectional views showing a method of manufacturing a semiconductor module according to the second embodiment of the present invention, and FIG. FIG.
In FIG. 3A, an electrode pad 22 is provided on the semiconductor chip 21, and the surface of the semiconductor chip 21 provided with the electrode pad 22 is covered with a protective film 23. The protective film 23 is provided with an opening 23 a that exposes the surface of the electrode pad 22. Here, in the center of the electrode pad 22, for example, as shown in FIG. 3B, an opening 24 for dividing the electrode pad 22 is provided.

In addition, when forming the opening part 24 which divides the electrode pad 22, it can carry out collectively at the time of the etching process for forming the electrode pad 22. FIG.
Next, as shown in FIG. 3C, a photosensitive resin layer 25 is applied on the semiconductor chip 21 on which the protective film 23 is formed. Then, by performing exposure / development of the photosensitive resin layer 25, an opening 25 a that exposes the surface of the electrode pad 22 is formed in the photosensitive resin layer 25.

  Next, as shown in FIG. 3D, the protruding electrode 26 disposed on the electrode pad 22 is formed in the opening 25a by using electroless plating. As a material of the protruding electrode 26, for example, nickel Ni, gold Au, copper Cu, or the like can be used. Here, in electroless plating, metal film formation proceeds on the electrode pad 22, and metal film formation is suppressed on the insulating layer under the electrode pad 22, so the opening 24 provided in the electrode pad 22. The protruding electrode 26 becomes recessed above. For this reason, by forming the protruding electrode 26 on the electrode pad 22 using electroless plating, the concave portion 27 corresponding to the shape of the opening 24 can be formed on the surface of the protruding electrode 26. In addition, the depth of the recessed part 27 can be set so that it may become smaller than the height of the terminal electrode 32 of Fig.4 (a).

Next, as shown in FIG. 4A, the photosensitive resin layer 25 is removed from the semiconductor chip 21 to expose the periphery of the protruding electrode 26 formed on the electrode pad 22. Then, the semiconductor chip 21 and the wiring substrate 31 are aligned so that the protruding electrode 26 and the terminal electrode 32 are arranged to face each other.
Next, as shown in FIG. 4B, the semiconductor chip 21 is connected to the wiring substrate 31 by bonding the protruding electrode 26 to the terminal electrode 32 in a state where the terminal electrode 32 is fitted in the concave portion 27 of the protruding electrode 26. Flip chip mounting on top. Then, the semiconductor chip 21 is resin-sealed by injecting a sealing resin 33 into the surface of the semiconductor chip 21 mounted on the wiring substrate 31.

Thus, the joint area of the protruding electrode 26 can be increased by fitting the terminal electrode 32 into the recess 27 of the protruding electrode 26. For this reason, even when the protruding electrode 26 is made of a hard material such as nickel Ni, the protruding electrode 26 can easily absorb the load at the time of bonding, and the semiconductor chip 21 under the electrode pad 22 is hardly cracked. It becomes possible to do.
FIG. 5 is a sectional view showing a circuit board manufacturing method according to the third embodiment of the present invention.

In FIG. 5A, a conductive layer 42 is formed on the wiring board 41 by attaching a metal foil made of copper Cu or the like on the wiring board 41.
Next, as shown in FIG. 5B, a resist is applied on the conductive layer 42. Then, the resist applied on the conductive layer 42 is exposed and developed to form a resist layer 43 arranged at a predetermined interval on the conductive layer 42.

  Next, as shown in FIG. 5C, isotropic etching of the conductive layer 42 is performed using the resist layer 43 as a mask to expose the surface of the wiring board 41 and the terminals with sharpened joint surfaces. The electrode 44 is formed on the wiring substrate 41. As the isotropic etching of the conductive layer 42, wet etching or plasma etching can be used. Then, as shown in FIG. 5D, the resist layer 43 on the terminal electrode 44 is removed.

  Here, by exposing the surface of the wiring substrate 41 using isotropic etching of the conductive layer 42, it becomes possible to change the etching amount in the thickness direction of the conductive layer 42, and as the surface of the conductive layer 42 is approached. It becomes possible to increase the etching amount in the lateral direction. Therefore, it is possible to form the terminal electrode 44 on the wiring substrate 41 while sharpening the tip of the terminal electrode 44, and to increase the bonding area of the terminal electrode 44 while suppressing the complexity of the manufacturing process. It becomes possible to easily absorb the load at the time of joining.

FIG. 6 is a sectional view showing a circuit board manufacturing method according to the fourth embodiment of the present invention.
In FIG. 6A, the seed electrode 52 is formed on the wiring substrate 51 corresponding to the arrangement position of the terminal electrode 55.
As shown in FIG. 6B, the mold 53 is provided with a recess 54 with a sharpened tip. Then, the mold 53 is pressed onto the wiring substrate 51 so that the concave portion 54 is disposed on the seed electrode 52. In addition, as a material of the formwork 53, glass or resin can be used, for example. Alternatively, a mold in which a release agent is applied to the surface of the recess 54 may be used.

Next, as shown in FIG. 6C, the terminal electrode 55 corresponding to the shape of the recess 54 is formed by performing electrolytic plating on the seed electrode 52 while pressing the mold 53 on the wiring substrate 51. 51 is formed. Then, as shown in FIG. 6D, when the terminal electrode 55 is formed on the wiring substrate 51, the mold 53 on the wiring substrate 51 is removed.
Accordingly, by changing the shape of the recess 54 provided in the mold 53, the terminal electrode 54 can be formed on the wiring substrate 51 while sharpening the tip of the terminal electrode 54. For this reason, it becomes possible to increase the joining area of the terminal electrode 54, suppressing complication of the manufacturing process, and to easily absorb the load at the time of joining.

FIG. 7 is a sectional view showing a circuit board manufacturing method according to the fifth embodiment of the present invention.
In FIG. 7A, the inkjet head 63 is disposed on the wiring board 61. Then, as shown in FIG. 7B, while controlling the position of the inkjet head 63, droplets 64 made of a conductive material are ejected onto the wiring substrate 61 via the inkjet head 63, so that the bonding surface is A sharpened terminal electrode 62 is formed on the wiring board 61. As the droplet 63, for example, a metal slurry or a metal paste in which a metal powder such as nickel Ni, gold Au, or copper Cu is dispersed in a solvent can be used.

Thus, by controlling the discharge position of the droplet 64, the shape of the terminal electrode 62 can be changed, and the terminal electrode 62 having a sharp joint surface can be easily formed on the wiring substrate 61. It becomes possible.
Note that the semiconductor module described above can be applied to electronic devices such as a liquid crystal display device, a mobile phone, a portable information terminal, a video camera, a digital camera, an MD (Mini Disc) player, an IC card, and an IC tag. The electronic device can be reduced in size and weight, and the reliability of the electronic device can be improved.

  In the above-described embodiment, the semiconductor chip mounting method has been described as an example. However, the present invention is not necessarily limited to the semiconductor chip mounting method, and for example, a ceramic element such as a surface acoustic wave (SAW) element. The present invention may also be applied to mounting methods for optical elements such as optical modulators and optical switches, and various sensors such as magnetic sensors and biosensors.

The figure which shows the manufacturing method of the semiconductor module which concerns on 1st Embodiment of this invention. Sectional drawing which shows the manufacturing method of the semiconductor module which concerns on 1st Embodiment of this invention. The figure which shows the manufacturing method of the semiconductor module which concerns on 2nd Embodiment of this invention. Sectional drawing which shows the manufacturing method of the semiconductor module which concerns on 2nd Embodiment of this invention. Sectional drawing which shows the manufacturing method of the circuit board which concerns on 3rd Embodiment of this invention. Sectional drawing which shows the manufacturing method of the circuit board which concerns on 4th Embodiment of this invention. Sectional drawing which shows the manufacturing method of the circuit board which concerns on 5th Embodiment of this invention.

Explanation of symbols

  1, 21 Semiconductor chip, 2, 22 Electrode pad 3, 4, 23, Protective film, 3a, 23a, 24 Open part, 5, 25 Photosensitive resin layer, 6, 26 Protruding electrode, 7, 27, 54 Recessed part, 11, 31, 41, 51, 61 Wiring board, 12, 32, 44, 55, 62 Terminal electrode, 13, 33 Sealing resin, 42 Conductive layer, 43 Resist, 52 Seed electrode, 53 Mold frame, 63 Inkjet head, 64 droplets

Claims (8)

An electrode pad;
A protective film disposed across the electrode pad;
A terminal electrode comprising: a protruding electrode formed on the electrode pad and provided with a concave portion on a surface thereof corresponding to an arrangement position of the protective film. An electrode pad formed on the insulating layer;
An opening for dividing the electrode pad;
A terminal electrode comprising: a protruding electrode formed on the electrode pad and provided with a concave portion corresponding to the opening on a surface thereof. A semiconductor chip;
An electrode pad formed on the semiconductor chip;
A protective film disposed across the electrode pad;
A semiconductor device comprising: a protruding electrode formed on the electrode pad and provided with a concave portion on a surface thereof corresponding to an arrangement position of the protective film. A semiconductor chip;
An electrode pad formed on the semiconductor chip;
A protective film disposed across the electrode pad;
A protruding electrode formed on the electrode pad and provided with a recess on the surface corresponding to the position of the protective film;
A terminal electrode joined to the protruding electrode in a state of being fitted in the recess;
A semiconductor module comprising: a wiring board provided with the terminal electrode.   5. The semiconductor module according to claim 4, wherein the tip of the terminal electrode provided on the wiring board is sharpened. A semiconductor chip;
An electrode pad formed on the semiconductor chip;
A protective film disposed across the electrode pad;
A protruding electrode formed on the electrode pad and provided with a recess on the surface corresponding to the position of the protective film;
A terminal electrode joined to the protruding electrode in a state of being fitted in the recess;
A wiring board provided with the terminal electrodes;
An electronic device comprising: an electronic component connected to the semiconductor chip through the wiring board. Forming an electrode pad on the insulating layer;
Forming a protective film on the electrode pad;
Etching the protective film to expose the surface of the electrode pad so that the protective film crosses the electrode pad;
And a step of forming a protruding electrode on the electrode pad by electroless plating. A step of aligning the wiring substrate with the semiconductor chip in which the recess corresponding to the position of the protective film is formed on the surface of the protruding electrode;
And a step of bonding the protruding electrode to the terminal electrode of the wiring board in a state in which the terminal electrode of the wiring board is fitted in the concave portion on the surface of the protruding electrode.

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