JP2005072497A - Method and apparatus for plasma processing - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing method which has a high plasma processing capability. <P>SOLUTION: A plasma processing apparatus has a plurality of electrodes 1, 2 arranged to be opposed to each other and gas passages 36. When gas is introduced into the gas passages 36 and a voltage is applied between the opposing electrodes 1, 2, a plasma 3 is generated in the gas passages 36 under a pressure corresponding nearly to the atmospheric pressure. In the plasma processing method, the plasma 3 is blown out from the gas passages 36 to be supplied to the surface of a workpiece 4. After the plasma 3 is supplied to the surface of the workpiece 4, the surface of the workpiece 4 supplied with the plasma 3 is subjected to exposure of a gas 6 containing oxygen. Thereafter, the plasma 3 is again supplied to the surface of the workpiece 4 subjected to the exposure of the gas 6 containing oxygen. After the surface of the workpiece 4 is activated with the supply of the plasma 3 so that oxygen molecules tend to easily adsorb on the surface of the workpiece, the surface is exposed to the gas 6 containing oxygen and oxygen molecules can be adsorbed on the surface of the workpiece 4. Thereafter, the oxygen molecules adsorbed on the surface of the workpiece 4 can be activated with the plasma 3. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention includes cleaning of foreign substances such as organic substances existing on the surface of the object to be processed, resist peeling and etching, improvement of organic film adhesion, metal oxide reduction, film formation, plating pretreatment, coating pretreatment, The present invention relates to a plasma processing method and a plasma processing apparatus used for surface treatment such as surface modification of various materials and parts, and particularly suitable for cleaning the surface of electronic parts that require precise bonding. It is.

  Conventionally, by introducing a gas between electrodes arranged opposite to each other and applying a voltage between the electrodes, a discharge is generated under a pressure near atmospheric pressure to generate plasma, and the plasma is blown out between the electrodes. The plasma treatment is performed on the workpiece by supplying the workpiece.

In the plasma processing method as described above, various types of gas introduced between the electrodes have been proposed. For example, nitrogen (N ₂₎ is considered in consideration of discharge stability, plasma processing capability, economy, and the like. ) Single or a mixed gas of nitrogen and oxygen (O ₂ ) is used (see, for example, Non-Patent Document 1).

  This Non-Patent Document 1 describes that when a mixed gas of nitrogen and oxygen is used in a blow-out type plasma treatment under atmospheric pressure, a high treatment speed can be obtained when the oxygen concentration is 3% by volume or less. Further, it is shown that when the oxygen concentration is 3% by volume or less, the treatment performance is improved as the oxygen concentration is gradually decreased, and the treatment speed is maximized when the treatment is performed with the oxygen concentration of 0%, that is, nitrogen alone. .

  In this way, when nitrogen alone is used as a plasma processing gas, as described in Non-Patent Document 1, “nitrogen excited species excited by plasma indirectly excites air (especially oxygen) on the substrate surface. By doing so, it is considered that ozone and oxygen excited species are generated, and the surface of the object to be processed is cleaned or modified by the reactive species.

However, in the plasma processing method using indirect excitation as described in Non-Patent Document 1, air near the surface of the object to be processed may be insufficient, and the dissociation probability of oxygen in the air may decrease. Therefore, there is a problem that ozone and oxygen excited species are reduced and the plasma processing capability is low.
"LCD cleaning technology using atmospheric pressure plasma" Sekisui Chemical Co., Ltd. Motokazu Yuasa, 50th Applied Physics Related Conference, Proceedings (2003. 3. Kanagawa University)

  The present invention has been made in view of the above points, and an object of the present invention is to provide a plasma processing method and a plasma processing apparatus capable of increasing the plasma processing capability.

  The plasma processing method according to claim 1 of the present invention includes a plurality of electrodes 1 and 2 and a gas flow path 36 arranged to face each other. In this plasma processing method, a voltage 3 is applied to generate plasma 3 in the gas flow path 36 under a pressure close to atmospheric pressure, and the plasma 3 is blown out of the gas flow path 36 and supplied to the surface of the workpiece 4. Then, after the plasma 3 is supplied to the surface of the object 4 to be processed, the surface of the object 4 to which the plasma 3 is supplied is exposed to the gas 6 containing oxygen, and then the object to be processed exposed to the gas 6 containing oxygen. The plasma 3 is again supplied to the surface of the object 4.

  According to the present invention, the surface of the object to be processed 4 is activated by supplying the plasma 3 so that the oxygen molecules are easily adsorbed, and then exposed to the gas 6 containing oxygen to be exposed to the oxygen molecules on the surface of the object 4 to be processed. Then, the plasma 3 is further supplied to the surface of the object 4 to which the oxygen molecules are adsorbed, so that the oxygen molecules adsorbed on the surface of the object 4 can be activated by the plasma 3. As a result, the amount of ozone and oxygen-excited species increases, and the plasma processing capability can be increased.

  The plasma processing method according to claim 2 of the present invention has a plurality of electrodes 1 and 2 and a gas flow path 36 arranged to face each other, introduces a gas into the gas flow path 36, and between the opposed electrodes 1 and 2 In this plasma processing method, a voltage 3 is applied to generate plasma 3 in the gas flow path 36 under a pressure close to atmospheric pressure, and the plasma 3 is blown out of the gas flow path 36 and supplied to the surface of the workpiece 4. Then, after the surface of the workpiece 4 is irradiated with ultraviolet rays in an atmosphere of a gas 6 containing oxygen, the plasma 3 is supplied to the surface of the workpiece 4 irradiated with ultraviolet rays (UV). is there.

  According to the present invention, the surface of the object to be processed 4 is activated by irradiation with ultraviolet rays so that oxygen molecules can be easily adsorbed, and the oxygen molecules can be adsorbed on the surface of the object to be processed 4. Oxygen molecules adsorbed on the surface of the object 4 can be activated by the plasma 3, thereby increasing the number of ozone and oxygen excited species and increasing the plasma processing capability.

  A plasma processing apparatus according to claim 3 of the present invention is characterized in that plasma processing is performed using the plasma processing method according to claim 1 or 2.

  In the present invention, the surface of the object to be processed is activated by supplying plasma so that oxygen molecules are easily adsorbed, and then exposed to a gas containing oxygen to adsorb the oxygen molecules on the surface of the object to be processed. By further supplying plasma to the surface of the workpiece to which oxygen molecules are adsorbed, the oxygen molecules adsorbed on the surface of the workpiece can be activated by the plasma. This increases the plasma processing capability.

  Hereinafter, the best mode for carrying out the present invention will be described.

  FIG. 1 shows an example of the plasma processing apparatus of the present invention. This plasma processing apparatus is a blow type, and includes a plasma generator 21 formed by providing a pair (two) of electrodes 1 and 2 on an electrode support housing 22.

  The electrodes 1 and 2 are formed in a substantially rectangular bar shape that is long in the width direction using a conductive metal material such as copper, aluminum, brass, stainless steel having high corrosion resistance (SUS304, etc.), titanium, 13 chromium steel, SUS410, etc. And the flowing water channel 37 for distribute | circulating a cooling water is provided in the inside over substantially full length. In FIG. 1, the width direction of the electrodes 1 and 2 is a direction orthogonal to the paper surface, and the plasma processing apparatus of the present invention performs plasma processing while conveying the workpiece 4 in the direction orthogonal to the width direction. It is.

  A dielectric coating 40 is formed on the entire surface of the electrodes 1 and 2 by a thermal spraying method of a ceramic material such as alumina, titania or zirconia. The dielectric coating 40 is preferably subjected to a sealing treatment. As the sealing material, an organic material such as an epoxy resin or an inorganic material such as silica can be used. A particularly effective material for the dielectric coating 40 made of such a ceramic spray coating material is alumina.

  In forming the dielectric coating 40, enamel coating can also be performed using an inorganic material glaze made of silica, titania, alumina, tin oxide, zirconia, or the like as a raw material. In the case of the above-described thermal spraying method or enamel coating, the thickness of the dielectric coating 40 can be set to 0.1 to 3 mm, more preferably 0.3 to 1.5 mm. If the thickness of the dielectric coating 40 is less than 0.1 mm, the dielectric coating 40 may break down. If the thickness is more than 3 mm, it is difficult to apply a voltage between the opposing electrodes 1 and 2. As a result, the discharge may become unstable.

  The electrode support housing 22 is made of a metal material such as stainless steel and is formed long in the width direction like the electrodes 1 and 2. In addition, a slit-like gas channel 36 penetrating vertically is formed in the electrode support housing 22, and electrode housing recesses 27 are formed on two inner surfaces of the electrode support housing 22 facing each other with the gas channel 36 interposed therebetween. Is provided. The electrode support housing 22 is provided with a pair of electrodes 1 and 2 such that the electrodes 1 and 2 are accommodated one by one in each electrode accommodating recess 27. Here, an insulating spacer 28 formed of a synthetic resin or the like is provided between each of the electrodes 1 and 2 and the electrode support housing 22, whereby the electrodes 1 and 2 and the electrode support housing 22 are provided. Insulation is ensured. Further, the pair of electrodes 1 and 2 provided in the electrode support housing 22 are opposed to each other with the gas flow path 36 interposed therebetween, and the gas flow path 36 between the electrodes 1 and 2 is formed as the discharge space 5. Yes. The plasma processing apparatus of the present invention preferably includes an inter-gap distance adjusting mechanism for keeping the distance between the pair of opposed electrodes 1 and 2 constant over substantially the entire length of the electrode 1 in the width direction.

  As described above, the electrodes 1 and 2 provided on the electrode support housing 22 are arranged opposite to each other in the transport direction of the workpiece 4 by arranging them in a direction parallel to the transport direction of the workpiece 4 (horizontal direction). ing. Further, the workpiece 4 is transported in one direction indicated by an arrow in FIG. The opposing electrodes 1 and 2 are arranged so as to face each other substantially in parallel via the discharge space 5 with a predetermined spacing. The spacing between the electrodes 1 and 2 (the dielectric provided on the facing surface of the electrodes 1 and 2). The distance between the body coatings 40 is preferably 0.2 to 3 mm. If the distance between the facing electrodes 1 and 2 (distance between gaps) deviates from the above range, it may be difficult to stably generate a uniform glow-like discharge.

  In this plasma treatment apparatus, as shown in FIG. 2, a power source 47 is electrically connected to the electrode 1 via a step-up transformer 48. Further, it is preferable that the pair of electrodes 1 and 2 facing each other is grounded at the midpoint, and the voltage is applied to both the electrodes 1 and 2 while being floated with respect to the ground. For this reason, the potential difference between the object to be processed 4 and the electrode 1 can be reduced to prevent generation of an arc, and damage to the object to be processed 4 due to the arc can be prevented.

  In the plasma processing apparatus of the present invention, as described above, the plasma generator 21 formed of the electrode support housing 22 and the electrodes 1 and 2 is adjacent to the direction (horizontal direction) parallel to the transport direction of the workpiece 4. A gas nozzle 23 is provided between the upper surfaces of the adjacent electrode support housings 22 arranged side by side. The gas nozzle 23 is formed long and substantially parallel to the width direction of the electrodes 1 and 2, and two slit-like nozzle ports 35 are formed on the lower surface of the gas nozzle 23 over substantially the entire length of the gas nozzle 23 in the width direction. Has been. The gas nozzles 23 are arranged in a state where the nozzle ports 35 are aligned with the upper openings of the gas flow paths 36 of the electrode support housings 22, respectively.

  Using the plasma processing apparatus formed as described above, a flat plate-like object such as a glass plate for a liquid crystal panel display (LCD) under a pressure close to atmospheric pressure (93.3 to 106.7 kPa (700 to 800 Torr)). The plasma treatment is performed on the workpiece 4 as follows. First, a plasma generating gas is introduced into a gas nozzle 23 provided above a pair of electrodes 1 and 2 arranged opposite to each other, and the plasma generating gas is gradually blown out from the nozzle port 35 while flowing in the width direction in the gas nozzle 23. Like that. Here, the plasma generating gas is blown out substantially uniformly over the entire length of the gas nozzle 23 in the width direction.

  The plasma generating gas used in the present invention is not particularly limited as long as it can stably generate discharge, and noble gases can be used. In particular, the discharge starting voltage is 10 kV / at atmospheric pressure. A gas of cm or more is preferable. Examples of the plasma generating gas having a discharge start voltage of 10 kV / cm or more include nitrogen, oxygen, hydrogen, methane, ammonia, air, water vapor, various organic monomers, fluorine-containing gas, and the like alone or as a mixed gas. In the present invention, the discharge start voltage of the plasma generating gas is preferably 100 kV / cm or less.

  Next, the plasma generating gas blown out from the nozzle port 35 of the gas nozzle 23 is introduced into the gas flow path 36 and flows through the gas flow path 36 from the upstream (upper side) to the downstream (lower side). Is introduced into the discharge space 5 between the pair of electrodes 1 and 2 through the upper opening. A voltage is applied by a power supply 47 between a pair of opposed electrodes 1 and 2 to generate a dielectric barrier discharge, and a plasma generating gas (molecule) introduced between the pair of opposed electrodes 1 and 2 Is excited by the action of an electric field applied between the opposing electrodes 1 and 2 to generate active species, whereby plasma (discharge gas) 3 is generated.

  In the plasma treatment of the present invention, it is preferable to apply a voltage having a continuous alternating waveform with a frequency of 30 to 500 kHz between a pair of electrodes 1 and 2 facing each other by a power supply 47 and a voltage with an electric field strength of 50 to 200 kV / cm. Is preferably applied. The above-mentioned continuous alternating waveform does not cause a pause period in which no voltage is applied between a pair of electrodes 1 and 2 facing each other as in a pulse waveform, but a voltage is applied between a pair of electrodes 1 and 2 facing each other continuously. For example, a sinusoidal waveform can be used. A pulse waveform voltage (pulse voltage waveform) can also be applied between the electrodes 1 and 2. The pulse waveform voltage is a voltage in which a constant period of voltage is repeatedly applied with a pause period. For example, the rising time and the falling time are 100 μsec or less, the repetition frequency is 0.5 to 1000 kHz, the electrode 1, By applying a waveform having an electric field strength of 0.5 to 200 kV / cm applied between the two, stable processing can be performed. Moreover, it is preferable that the flow rate of the gas supplied to the gap (discharge space 5) between the opposing electrodes 1 and 2 is 5 to 20 m / second. In adjusting the gas flow velocity, the distance between the electrodes 1 and 2 facing each other, the gas flow rate, and the like are adjusted.

  The plasma 3 generated as described above is blown out as a plasma jet from the downstream opening of the discharge space 5 over the entire length in the width direction of the electrodes 1 and 2. In this plasma processing apparatus, Plasmas 3 are blown out from the two plasma generators 21, respectively. Further, the plasma 3 blown out from the two plasma generators 21 is opposed in parallel in the direction parallel to the conveying direction of the workpiece 4, and a gas 6 containing oxygen is interposed between the plasmas 3 and 3. As air will be present.

  After the plasma 3 is generated and blown out by the two plasma generators 21 as described above, the workpiece 4 is disposed downstream (lower side) of the electrodes 1 and 2 of the two plasma generators 21. ) Is transported by a transport means 50 such as an XY table, and plasma treatment of the workpiece 4 can be performed by spraying and supplying (exposing) the plasma 3 to the surface of the workpiece 4. In the present invention, the plasma 3 is blown and supplied from the one plasma generator 21 on the upstream side in the transport direction of the workpiece 4 to the surface of the workpiece 4, and then the plasma 3 is added to the air 6 as the oxygen-containing gas 6. Is exposed to the surface of the workpiece 4 exposed to the gas 6 containing oxygen from the other plasma generator 21 on the downstream side in the transport direction of the workpiece 4. Plasma 3 again By supplying by spraying, it is those plasma treatment.

  In this way, by performing the plasma treatment by providing the step of supplying the plasma 3 to the surface of the workpiece 4 before and after the step of exposing to the gas 6 containing oxygen, for example, oxygen as shown in FIG. Compared with the case where the plasma treatment is performed without exposure to the contained gas, the treatment capability can be improved. That is, the surface of the object to be processed 4 is activated by supplying the plasma 3 for the first time so that oxygen molecules (or atomic oxygen) are easily adsorbed and then exposed to the gas 6 containing oxygen. The oxygen molecules adsorbed on the surface of the object to be processed 4 can be activated by adsorbing oxygen molecules on the surface of the substrate and then supplying the plasma 3 to the surface of the object 4 to which the oxygen molecules are adsorbed. Thus, the processing capability can be improved.

  In this embodiment, after the plasma 3 is first supplied to the surface of the object 4 to be processed, the surface of the object 4 is continuously exposed to the gas 6 containing oxygen. Oxygen molecules can be adsorbed before the activation state of the surface of the object to be treated 4 is lowered, and the surface of the object to be treated 4 is exposed to the gas 6 containing oxygen immediately after the second time. The plasma 3 is supplied to the surface of the object 4 to be processed, so that the plasma 3 can be supplied before the oxygen molecules adsorbed on the surface of the object 4 to be desorbed. A reduction in processing capacity can be prevented. Further, the supply time of the plasma 3 to the workpiece 4 and the exposure time of the surface of the workpiece 4 to the gas 6 containing oxygen can be appropriately set depending on the type of the workpiece 4 and the content of the plasma treatment.

  FIG. 3 shows another embodiment. This plasma processing apparatus is formed by including the plasma generator 21 and the ultraviolet irradiation apparatus 30 similar to those described above. One plasma generator 21 is provided, and a gas nozzle 23 similar to the above is provided on the upper side thereof. The upper part of the plasma generator 21 is covered with an exhaust cover 20. Examples of the ultraviolet irradiation device 30 include an excimer UV lamp, a low-pressure mercury lamp, and a high-pressure mercury lamp. The ultraviolet irradiation device 30 is arranged upstream of the plasma generator 21 in the conveying direction of the workpiece 4. Other configurations are the same as those in the above embodiment.

In performing plasma processing on the workpiece 4 under a pressure in the vicinity of atmospheric pressure using the plasma processing apparatus formed in this way, first, the same transport as described above so as to pass under the ultraviolet irradiation apparatus 30. The processing object 4 is conveyed by the means 50. Thereby, ultraviolet rays are irradiated from the ultraviolet irradiation device 30 onto the surface of the workpiece 4 in an atmosphere of air, which is a gas 6 containing oxygen. The intensity of the ultraviolet rays irradiated at this time varies depending on the type of the object 4 to be processed, the wavelength of the ultraviolet rays, and the like, but can be set to 4 to 100 mW / cm ² , for example. Then, the surface of the object to be processed 4 is activated by this ultraviolet irradiation so that the oxygen molecules are easily adsorbed, and the oxygen molecules are adsorbed on the surface of the object 4 to be processed.

  After the oxygen molecules are adsorbed on the surface of the workpiece 4 in this way, the workpiece 4 is transported to the downstream side (lower side) of the electrodes 1 and 2 of the plasma generator 21 by the transport means 50 to generate plasma. By supplying the plasma 3 generated in the discharge space 5 of the vessel 21 to the surface of the workpiece 4 on which oxygen molecules are adsorbed, the plasma treatment of the workpiece 4 can be performed. The generation conditions and supply method of the plasma 3 are the same as described above.

  In this embodiment, before the plasma 3 is supplied to the surface of the workpiece 4, the surface of the workpiece 4 is irradiated with ultraviolet rays in an atmosphere of a gas 6 containing oxygen. After the oxygen molecules are adsorbed on the surface, the plasma 3 can be supplied to the surface of the object 4 to be processed. By supplying the plasma 3 to the surface of the object 4 on which the oxygen molecules are adsorbed, the object to be processed is supplied. The oxygen molecules adsorbed on the surface of the product 4 can be activated to improve the processing capacity.

  In this embodiment, after supplying ultraviolet light to the surface of the object 4 to be processed, the plasma 3 is continuously supplied to the surface of the object 4 to be processed. The plasma 3 can be supplied before the oxygen molecules adsorbed on the detachment can be prevented, and the plasma processing capacity can be prevented from being lowered.

  In any of the above-described embodiments, air is used as the gas 6 containing oxygen. However, the present invention is not limited to this. For example, a mixed gas of oxygen gas and nitrogen gas or a mixed gas of oxygen gas and rare gas is used. be able to.

In the present invention, it is preferable that the gas 6 containing oxygen further contains water vapor, CO ₂ , O ₃ or the like. In particular, in the case of water vapor, in addition to oxygen molecules, water molecules and hydroxy groups (OH groups) can be adsorbed on the surface of the object to be processed 4, thereby enhancing the treatment effect. As the humidity of the gas (air) when water vapor is included, the gas temperature is 25 ° C. to 80 ° C. and the relative humidity is 40% to 80%, more preferably the gas temperature is 30 ° C. to 60 ° C., and the relative humidity is 50% to 70%. It is. If the relative humidity is less than 40%, the improvement of the treatment effect may be reduced. If the relative humidity exceeds 80%, the plasma is deactivated, the treatment effect is lowered, and the problem of dew condensation on the workpiece 4 also occurs. There is a fear. Furthermore, if the gas temperature is less than 25 ° C., the improvement of the treatment effect may be reduced, and if it exceeds 80 ° C., thermal damage to the workpiece 4 may occur.

  In any of the above-described embodiments, the case where the workpiece 4 is transported substantially horizontally has been described. However, the present invention is not limited to this, and the present invention is directed to any direction (for example, the vertical direction). The present invention can also be applied to the case of conveyance. In the present invention, the number of electrodes can be arbitrarily set as necessary as long as it is two or more. Further, the voltage application conditions are not limited to those described above. For example, the frequency, waveform shape, electric field strength, gas flow rate, and the like of the applied voltage can be arbitrarily set as necessary.

  Hereinafter, the present invention will be described specifically by way of examples.

(Example 1)
The plasma processing apparatus shown in FIG. 1 was formed. The electrodes 1 and 2 are made of stainless steel having a length of 1100 mm, and an alumina layer having a thickness of 1 mm is formed on the surfaces of the electrodes 1 and 2 by a thermal spraying method to form a dielectric coating 40. Further, cooling water was circulated inside the electrodes 1 and 2. The pair of electrodes 1 and 2 formed in this way were arranged to face each other with an interval of 1 mm when not discharged. Further, when not discharged, the plasma generating gas was flowed from the upstream side to the gas flow path 36 so that the gas flow rate became 10 m / sec. Nitrogen was used as the plasma generating gas. Further, dry air (temperature: 25 ° C., relative humidity: 30%) was used as the gas 6 containing oxygen to which the surface of the workpiece 4 is exposed during the first and second supply of the plasma 3. The voltage applied between the pair of electrodes 1 and 2 was a frequency of 80 kHz, an electric field strength of 100 kV / cm, and the waveform was a sine wave. Plasma 3 is generated under atmospheric pressure under such conditions, and plasma is passed by passing through a glass plate for liquid crystal as processing object 4 at a speed of 8 m / min at a position 5 mm away from the downstream side of electrodes 1 and 2. Processed.

  As a result, the water contact angle of the workpiece 4 that was about 50 ° when not treated was about 5 °. Moreover, when the surface of the color filter for liquid crystal comprised with an acrylic resin as the to-be-processed object 4 was processed, the contact angle of water which was 50 degrees in the untreated was modified to 15 degrees.

(Example 2)
The plasma processing apparatus shown in FIG. 3 was formed. As the plasma generator 21, only the same one as in Example 1 was used. Further, as the ultraviolet irradiation device 30, a low-pressure mercury lamp (wavelength 253.7 nm) was used. This ultraviolet irradiation device 30 is installed 100 mm upstream from the plasma generator 21 in the conveyance direction of the workpiece 4 and is arranged above the conveyance means 50 so that the distance to the workpiece 4 is 5 mm. . And before supplying the plasma 3, the ultraviolet irradiation device 30 was turned on in the air which is the gas 6 containing oxygen, and the surface of the workpiece 4 was irradiated with ultraviolet rays.

  Further, when not discharged, the plasma generating gas was flowed from the upstream side into the gas flow path 36 so that the gas flow rate was 20 m / sec. The voltage applied between the pair of electrodes 1 and 2 was a frequency of 300 kHz, an electric field strength of 100 kV / cm, and the waveform was a sine wave. Plasma 3 was generated under atmospheric pressure under such conditions, and plasma treatment was performed by passing the workpiece 4 at a speed of 3 m per minute at a position 5 mm away from the downstream side of the electrodes 1 and 2.

  As a result of performing the same as in Example 1 except for these, when the object to be processed 4 is the same glass plate for liquid crystal as in Example 1, the contact angle of water after the plasma treatment is 5 °, and the object to be processed 4 is in Example. In the case of the liquid crystal color filter similar to 1, the water contact angle after the plasma treatment was 20 °.

(Example 3)
In Example 1, it was performed in an atmosphere of wet air (40 ° C., relative humidity 60%) instead of dry air. Other conditions were the same as in Example 1.

  Plasma 3 is generated under atmospheric pressure under such conditions, and plasma is passed by passing a glass plate for liquid crystal as a processing object 4 at a speed of 10 m / min at a position 5 mm away from the downstream side of electrodes 1 and 2. Processed.

  As a result, the water contact angle of the workpiece 4 that was about 50 ° when not treated was about 4 °. Moreover, when the surface of the color filter for liquid crystals comprised with an acrylic resin as the to-be-processed object 4 was processed, the contact angle of water which was 50 degrees in the untreated was modified to 10 degrees.

(Comparative example)
The plasma processing apparatus shown in FIG. 4 was used. This plasma processing apparatus is formed except for the ultraviolet irradiation apparatus 30 in the second embodiment. Then, as a result of performing the plasma treatment on the workpiece 4 under the same conditions as in Example 2 without irradiating ultraviolet rays, when the workpiece 4 is a glass plate for liquid crystal, the contact angle of water after the plasma treatment is 15 °. When the object to be processed 4 is a color filter for liquid crystal, the contact angle of water after the plasma treatment was 35 °, and in any case, the plasma treatment ability of the comparative example was lower than that of Examples 1 and 2.

It is a schematic sectional drawing which shows an example of embodiment of this invention. It is the schematic which shows an example of a circuit same as the above. It is a schematic sectional drawing which shows other embodiment same as the above. It is general | schematic sectional drawing which shows a comparative example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electrode 2 Electrode 3 Plasma 4 To-be-processed object 6 Gas containing oxygen 36 Gas flow path

Claims (3)

  It has a plurality of electrodes and gas channels arranged opposite to each other, and introduces gas into the gas channel and generates a plasma in the gas channel under a pressure near atmospheric pressure by applying a voltage between the opposing electrodes. A plasma processing method for blowing out the plasma from the gas flow path and supplying the plasma to the surface of the object to be processed, wherein the plasma is supplied to the surface of the object to be processed and then the plasma is supplied to the gas containing air or oxygen. A plasma processing method, comprising: exposing a surface of an object to be processed; and thereafter supplying plasma again to the surface of the object to be processed exposed to a gas containing air or oxygen.   It has a plurality of electrodes and gas channels arranged opposite to each other, and introduces gas into the gas channel and generates a plasma in the gas channel under a pressure near atmospheric pressure by applying a voltage between the opposing electrodes. A plasma processing method for blowing out the plasma from the gas flow path and supplying the plasma to the surface of the object to be processed, wherein the surface of the object to be processed is irradiated with ultraviolet rays in a gas atmosphere containing air or oxygen, and then the ultraviolet rays are irradiated. A plasma processing method comprising supplying plasma to a surface of an object to be irradiated.   A plasma processing apparatus that performs plasma processing using the plasma processing method according to claim 1.

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