JP2005072236A5 - - Google Patents
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- JP2005072236A5 JP2005072236A5 JP2003299750A JP2003299750A JP2005072236A5 JP 2005072236 A5 JP2005072236 A5 JP 2005072236A5 JP 2003299750 A JP2003299750 A JP 2003299750A JP 2003299750 A JP2003299750 A JP 2003299750A JP 2005072236 A5 JP2005072236 A5 JP 2005072236A5
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Claims (18)
前記基板の主面上に形成された前記トランジスタのゲート電極と、
前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、前記基板の主面内に形成された第１導電型の拡散領域と、
前記拡散領域の上部の前記基板の主面内に形成された第２導電型の表面シールド領域と、
を備え、
前記拡散領域は、
第１不純物の注入により形成された第１拡散層と、
前記第１不純物よりも質量数の小さい第２不純物の注入により、前記第１拡散層よりも浅く、かつ、前記基板の深さ方向において前記ゲート電極と一部が重なるように形成された第２拡散層と、
を備えることを特徴とする半導体装置。 A semiconductor device having a substrate, a photodiode, and a transistor that transfers a charge of the photodiode,
A gate electrode of the transistor formed on a main surface of the substrate;
A diffusion region of a first conductivity type formed in the main surface of the substrate, which functions as one electrode of the photodiode and one electrode of the transistor;
A surface shield region of a second conductivity type formed in the main surface of the substrate above the diffusion region;
With
The diffusion region is
A first diffusion layer formed by implantation of a first impurity;
A second impurity is formed so as to be shallower than the first diffusion layer and partially overlap the gate electrode in the depth direction of the substrate by implantation of a second impurity having a mass number smaller than that of the first impurity. A diffusion layer;
A semiconductor device comprising:
前記基板の主面上に形成された前記トランジスタのゲート電極と、
前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、前記基板の主面内に形成された第１導電型の拡散領域と、
前記拡散領域の上部の前記基板の主面内に形成された第２導電型の表面シールド領域と、
を備え、
前記拡散領域は、
第１不純物の注入により形成された第１拡散層と、
前記第１不純物よりも質量数の大きい第２不純物の注入により、前記第１拡散層よりも浅く、かつ、前記基板の深さ方向において前記ゲート電極と一部が重なるように形成された第２拡散層と、
を備えることを特徴とする半導体装置。 A semiconductor device having a substrate, a photodiode, and a transistor that transfers a charge of the photodiode,
A gate electrode of the transistor formed on a main surface of the substrate;
A diffusion region of a first conductivity type formed in a main surface of the substrate, which functions as one electrode of the photodiode and one electrode of the transistor;
A surface shield region of a second conductivity type formed in the main surface of the substrate above the diffusion region;
With
The diffusion region is
A first diffusion layer formed by implantation of a first impurity;
A second impurity formed so as to be shallower than the first diffusion layer and partially overlap the gate electrode in the depth direction of the substrate by implantation of a second impurity having a mass number larger than that of the first impurity. A diffusion layer;
A semiconductor device comprising:
前記表面シールド領域は、前記ゲート電極から離間していることを特徴とする半導体装置。 The semiconductor device according to claim 1 or 2,
The semiconductor device according to claim 1, wherein the surface shield region is separated from the gate electrode.
前記基板の主面上に形成され、前記フォトダイオード側にサイドウォールが配置された前記トランジスタのゲート電極と、
前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、前記基板の主面内に形成された第１導電型の拡散領域と、
前記拡散領域の上部の前記基板の主面内に、前記ゲート電極から離間して形成された第２導電型の表面シールド領域と、
を備え、
前記表面シールド領域の前記ゲート電極側の端部は、前記サイドウォールの下部に位置することを特徴とする半導体装置。 A semiconductor device having a substrate, a photodiode, and a transistor that transfers a charge of the photodiode,
A gate electrode of the transistor formed on a main surface of the substrate and having a sidewall disposed on the photodiode side;
A diffusion region of a first conductivity type formed in a main surface of the substrate, which functions as one electrode of the photodiode and one electrode of the transistor;
A surface shield region of a second conductivity type formed in the main surface of the substrate above the diffusion region and spaced from the gate electrode;
With
An end of the surface shield region on the gate electrode side is located below the sidewall.
（ａ）前記基板の主面上に、前記トランジスタのゲート電極を形成する工程と、
（ｂ）前記基板の主面内に、前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、第１導電型の拡散領域を形成する工程と、
（ｃ）前記工程（ｂ）において生じた前記基板の結晶欠陥を、熱処理によって回復する工程と、
（ｄ）前記拡散領域の上部の前記基板の主面内に、第２導電型の表面シールド領域を形成する工程と、
を備え、
前記工程（ｂ）は、
（ｂ−１）第１不純物を注入して、第１拡散層を形成する工程と、
（ｂ−２）第２不純物を注入して、前記第１拡散層よりも浅く、かつ、前記基板の深さ方向において前記ゲート電極と一部が重なるように第２拡散層を形成する工程と、
を備えることを特徴とする半導体装置の製造方法。 A method of manufacturing a semiconductor device comprising a substrate, a photodiode, and a transistor that transfers charges of the photodiode,
(A) forming a gate electrode of the transistor on a main surface of the substrate;
(B) forming a diffusion region of a first conductivity type that functions as one electrode of the photodiode and one electrode of the transistor in the main surface of the substrate;
(C) recovering crystal defects of the substrate generated in the step (b) by heat treatment;
(D) forming a surface shield region of a second conductivity type in the main surface of the substrate above the diffusion region;
With
The step (b)
(B-1) a step of implanting a first impurity to form a first diffusion layer;
(B-2) implanting a second impurity to form a second diffusion layer so as to be shallower than the first diffusion layer and partially overlap the gate electrode in the depth direction of the substrate; ,
A method for manufacturing a semiconductor device, comprising:
前記第２不純物は、前記第１不純物よりも質量数が小さいことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 5,
The method of manufacturing a semiconductor device, wherein the second impurity has a mass number smaller than that of the first impurity.
前記第２不純物は、前記第１不純物よりも質量数が大きいことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 5,
The method of manufacturing a semiconductor device, wherein the second impurity has a mass number larger than that of the first impurity.
前記工程（ｂ）は、
前記工程（ｂ−２）、前記工程（ｂ−１）の順に実行されることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 7,
The step (b)
The manufacturing method of the semiconductor device characterized by performing in order of the said process (b-2) and the said process (b-1).
（ａ）前記基板の主面上に、前記トランジスタのゲート電極を形成する工程と、
（ｂ）前記基板の主面内に、前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、第１導電型の拡散領域を形成する工程と、
（ｃ）前記フォトダイオードの形成予定領域上の膜厚が所定の第１膜厚となるように、前記基板の主面上の全面に第１絶縁膜を堆積する工程と、
（ｄ）前記第１絶縁膜の前記第１膜厚を突き抜けるには十分で、前記ゲート電極のサイドに堆積した前記第１絶縁膜の第２膜厚を突き抜けるには不十分なエネルギーで不純物を注入して、前記拡散領域の上部の前記基板の主面内に第２導電型の表面シールド領域を形成する工程と、
を備えることを特徴とする半導体装置の製造方法。 A method of manufacturing a semiconductor device comprising a substrate, a photodiode, and a transistor that transfers charges of the photodiode,
(A) forming a gate electrode of the transistor on a main surface of the substrate;
(B) forming a diffusion region of a first conductivity type that functions as one electrode of the photodiode and one electrode of the transistor in the main surface of the substrate;
(C) depositing a first insulating film over the entire surface of the main surface of the substrate so that the film thickness on the region where the photodiode is to be formed becomes a predetermined first film thickness;
(D) Impurities with sufficient energy to penetrate the first film thickness of the first insulating film and insufficient to penetrate the second film thickness of the first insulating film deposited on the side of the gate electrode. Implanting and forming a surface shield region of a second conductivity type in the main surface of the substrate above the diffusion region;
A method for manufacturing a semiconductor device, comprising:
（ｅ）前記工程（ｄ）の後に、前記第１絶縁膜に対してエッチングを行い、前記ゲート電極にサイドウォールを形成する工程、
をさらに備えることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 9,
(E) After the step (d), etching the first insulating film to form a sidewall on the gate electrode;
A method for manufacturing a semiconductor device, further comprising:
（ｅ）前記工程（ｄ）の後に、前記第１絶縁膜上の全面に、第２絶縁膜をさらに堆積する工程と、
（ｆ）前記第１および第２絶縁膜の双方に対してエッチングを行い、前記ゲート電極にサイドウォールを形成する工程と、
をさらに備えることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 9,
(E) after the step (d), further depositing a second insulating film on the entire surface of the first insulating film;
(F) etching both of the first and second insulating films to form sidewalls on the gate electrode;
A method for manufacturing a semiconductor device, further comprising:
（ａ）前記基板の主面上に、前記トランジスタのゲート電極を形成する工程と、
（ｂ）前記基板の主面内に、前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、第１導電型の拡散領域を形成する工程と、
（ｃ）前記基板の主面上の全面に絶縁膜を堆積する工程と、
（ｄ）前記フォトダイオードの形成予定領域上の膜厚が所定の第１膜厚となるまで、前記絶縁膜に対してエッチングを行う工程と、
（ｅ）前記絶縁膜の前記第１膜厚を突き抜けるには十分で、前記ゲート電極のサイドに堆積した前記絶縁膜の第２膜厚を突き抜けるには不十分なエネルギーで不純物を注入して、前記拡散領域の上部の前記基板の主面内に第２導電型の表面シールド領域を形成する工程と、
を備えることを特徴とする半導体装置の製造方法。 A method of manufacturing a semiconductor device comprising a substrate, a photodiode, and a transistor that transfers charges of the photodiode,
(A) forming a gate electrode of the transistor on a main surface of the substrate;
(B) forming a diffusion region of a first conductivity type that functions as one electrode of the photodiode and one electrode of the transistor in the main surface of the substrate;
(C) depositing an insulating film over the entire main surface of the substrate;
(D) etching the insulating film until the film thickness on the region where the photodiode is to be formed reaches a predetermined first film thickness;
(E) implanting an impurity with sufficient energy to penetrate the first film thickness of the insulating film and insufficient to penetrate the second film thickness of the insulating film deposited on the side of the gate electrode; Forming a surface shield region of a second conductivity type in the main surface of the substrate above the diffusion region;
A method for manufacturing a semiconductor device, comprising:
（ａ）前記基板の主面上に、前記トランジスタのゲート電極を形成する工程と、
（ｂ）前記基板の主面内に、前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、第１導電型の拡散領域を形成する工程と、
（ｃ）前記基板の主面上の全面に第１絶縁膜を堆積する工程と、
（ｄ）前記第１絶縁膜上の全面に、前記第１絶縁膜と阻止能が相違する第２絶縁膜をさらに堆積する工程と、
（ｆ）前記第１および第２絶縁膜の双方に対してエッチングを行い、前記ゲート電極の前記フォトダイオードの形成予定領域側に、前記第１および第２絶縁膜を構成要素として含むサイドウォールを形成する工程と、
（ｇ）前記サイドウォールを注入マスクの一部として用いて不純物を注入して、前記拡散領域の上部の前記基板の主面内に第２導電型の表面シールド領域を形成する工程と、
を備えることを特徴とする半導体装置の製造方法。 A method of manufacturing a semiconductor device comprising a substrate, a photodiode, and a transistor that transfers charges of the photodiode,
(A) forming a gate electrode of the transistor on a main surface of the substrate;
(B) forming a diffusion region of a first conductivity type that functions as one electrode of the photodiode and one electrode of the transistor in the main surface of the substrate;
(C) depositing a first insulating film on the entire main surface of the substrate;
(D) further depositing a second insulating film having a stopping power different from that of the first insulating film on the entire surface of the first insulating film;
(F) Etching is performed on both the first and second insulating films, and side walls including the first and second insulating films as constituent elements are formed on the side of the gate electrode where the photodiode is to be formed. Forming, and
(G) implanting impurities using the sidewall as a part of an implantation mask to form a surface shield region of a second conductivity type in the main surface of the substrate above the diffusion region;
A method for manufacturing a semiconductor device, comprising:
（ａ）前記基板の主面上に、前記トランジスタのゲート電極を形成する工程と、
（ｂ）前記基板の主面内に、前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、第１導電型の拡散領域を形成する工程と、
（ｃ）前記基板の主面上の全面に第１絶縁膜を堆積する工程と、
（ｄ）前記第１絶縁膜上の全面に、前記第１絶縁膜と阻止能が相違する第２絶縁膜をさらに堆積する工程と、
（ｆ）前記フォトダイオードの形成予定領域上の前記第１絶縁膜の膜厚が所定の第１膜厚となるまで、前記第１および第２絶縁膜の双方に対してエッチングを行い、前記ゲート電極の前記フォトダイオードの形成予定領域側に、前記第１および第２絶縁膜を構成要素として含むサイドウォールを形成する工程と、
（ｇ）前記第１絶縁膜の前記第１膜厚を突き抜けるには十分で、前記サイドウォールの第２膜厚を突き抜けるには不十分なエネルギーで不純物を注入して、前記拡散領域の上部の前記基板の主面内に第２導電型の表面シールド領域を形成する工程と、
を備えることを特徴とする半導体装置の製造方法。 A method of manufacturing a semiconductor device comprising a substrate, a photodiode, and a transistor that transfers charges of the photodiode,
(A) forming a gate electrode of the transistor on a main surface of the substrate;
(B) forming a diffusion region of a first conductivity type that functions as one electrode of the photodiode and one electrode of the transistor in the main surface of the substrate;
(C) depositing a first insulating film on the entire main surface of the substrate;
(D) further depositing a second insulating film having a stopping power different from that of the first insulating film on the entire surface of the first insulating film;
(F) Etching is performed on both the first and second insulating films until the film thickness of the first insulating film on the region where the photodiode is to be formed reaches a predetermined first film thickness, and the gate Forming a sidewall including the first and second insulating films as components on the side of the electrode where the photodiode is to be formed;
(G) Impurities are implanted with an energy sufficient to penetrate the first film thickness of the first insulating film and not enough to penetrate the second film thickness of the sidewall, Forming a second conductivity type surface shield region in the main surface of the substrate;
A method for manufacturing a semiconductor device, comprising:
前記工程（ｆ）においては、前記第１絶縁膜よりも前記第２絶縁膜のほうがエッチングレートが高いことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 14,
In the step (f), the method for manufacturing a semiconductor device is characterized in that the second insulating film has a higher etching rate than the first insulating film.
前記基板の主面上に形成された前記トランジスタのゲート電極と、A gate electrode of the transistor formed on a main surface of the substrate;
前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、前記基板の主面内に形成された第１導電型の拡散領域と、A diffusion region of a first conductivity type formed in the main surface of the substrate, which functions as one electrode of the photodiode and one electrode of the transistor;
前記拡散領域の上部の前記基板の主面内に形成された第２導電型の表面シールド領域と、A surface shield region of a second conductivity type formed in the main surface of the substrate above the diffusion region;
を備え、With
前記拡散領域は、The diffusion region is
第１不純物の注入により形成された第１拡散層と、A first diffusion layer formed by implantation of a first impurity;
前記第１不純物よりも質量数の小さい第２不純物の注入により、前記第１拡散層よりも浅く、かつ、平面視において前記ゲート電極と一部が重なるように形成された第２拡散層と、A second diffusion layer formed so as to be shallower than the first diffusion layer and partially overlap the gate electrode in plan view by implantation of a second impurity having a mass number smaller than that of the first impurity;
を備えることを特徴とする半導体装置。A semiconductor device comprising:
前記基板の主面上に形成された前記トランジスタのゲート電極と、A gate electrode of the transistor formed on a main surface of the substrate;
前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、前記基板の主面内に形成された第１導電型の拡散領域と、A diffusion region of a first conductivity type formed in the main surface of the substrate, which functions as one electrode of the photodiode and one electrode of the transistor;
前記拡散領域の上部の前記基板の主面内に形成された第２導電型の表面シールド領域と、A surface shield region of a second conductivity type formed in the main surface of the substrate above the diffusion region;
を備え、With
前記拡散領域は、The diffusion region is
第１不純物の注入により形成された第１拡散層と、A first diffusion layer formed by implantation of a first impurity;
前記第１不純物よりも質量数の大きい第２不純物の注入により、前記第１拡散層よりも浅く、かつ、平面視において前記ゲート電極と一部が重なるように形成された第２拡散層と、A second diffusion layer formed so as to be shallower than the first diffusion layer and partially overlap the gate electrode in plan view by implantation of a second impurity having a mass number larger than that of the first impurity;
を備えることを特徴とする半導体装置。A semiconductor device comprising:
（ａ）前記基板の主面上に、前記トランジスタのゲート電極を形成する工程と、(A) forming a gate electrode of the transistor on a main surface of the substrate;
（ｂ）前記基板の主面内に、前記フォトダイオードの一の電極、かつ、前記トランジスタの一の電極として機能する、第１導電型の拡散領域を形成する工程と、(B) forming a diffusion region of a first conductivity type that functions as one electrode of the photodiode and one electrode of the transistor in the main surface of the substrate;
（ｃ）前記工程（ｂ）において生じた前記基板の結晶欠陥を、熱処理によって回復する工程と、(C) recovering crystal defects of the substrate generated in the step (b) by heat treatment;
（ｄ）前記拡散領域の上部の前記基板の主面内に、第２導電型の表面シールド領域を形成する工程と、(D) forming a surface shield region of a second conductivity type in the main surface of the substrate above the diffusion region;
を備え、With
前記工程（ｂ）は、The step (b)
（ｂ−１）第１不純物を注入して、第１拡散層を形成する工程と、(B-1) a step of implanting a first impurity to form a first diffusion layer;
（ｂ−２）第２不純物を注入して、前記第１拡散層よりも浅く、かつ、平面視において前記ゲート電極と一部が重なるように第２拡散層を形成する工程と、(B-2) implanting a second impurity to form a second diffusion layer that is shallower than the first diffusion layer and partially overlaps the gate electrode in plan view;
を備えることを特徴とする半導体装置の製造方法。A method for manufacturing a semiconductor device, comprising:
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| US7355228B2 (en) | 2004-10-15 | 2008-04-08 | Omnivision Technologies, Inc. | Image sensor pixel having photodiode with multi-dopant implantation |
| KR100679855B1 (en) | 2005-05-02 | 2007-02-07 | (주) 픽셀플러스 | Unit pixel of image sensor for control dark current and method of manufacture thereof |
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