JP2005057058A - Solid-state imaging device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device which is less influenced by color mixture and can be improved in sensitivity. <P>SOLUTION: The solid-state imaging device comprises a light receiving section 22 formed in an Si substrate 20, a micro lens 26 for condensing light into the light receiving section 22, a first resin layer 12a formed on the top of the micro lens 26, a color filter 27 which is formed on the top of the first resin layer 12a and has either one color among a plurality of colors, a second resin layer 12b formed on the top of the color filter 27, and a glass substrate 13 formed on top of the second resin layer 12b. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a solid-state imaging device, and more particularly to a color solid-state imaging device having a color filter.

  Conventionally, as a solid-state imaging device for handling color images, a solid-state imaging device having a top lens structure in which a color filter is provided between a light receiving unit and a lens for condensing light on the light receiving unit, and for focusing on the light receiving unit A solid-state imaging device having a top filter structure in which a color filter is provided on the lens (for example, see Patent Document 1) is known. The solid-state imaging device in the solid-state imaging device having the top filter structure disclosed in Patent Document 1 is configured to collect the light receiving unit and light on the light-receiving unit as compared with the solid-state imaging device in the solid-state imaging device having the top lens structure. Since the distance from the lens can be reduced, the sensitivity is high and it is suitable for miniaturization. Therefore, when high resolution is required, the solid-state imaging device having the top filter structure is more advantageous than the solid-state imaging device having the top lens structure.

FIG. 16 is a cross-sectional view showing the structure of a solid-state imaging device according to a conventional example disclosed in Patent Document 1. Referring to FIG. 16, in the solid-state imaging device according to the conventional example, a plurality of light receiving units 122 having a photoelectric conversion function for converting incident light into signal charges are formed on the main surface of Si substrate 120 at predetermined intervals. ing. On the Si substrate 120, a film 124 having an element isolation portion 123 protruding near the center between adjacent light receiving portions is formed. Bell-shaped lenses 126a, 126b, and 126c are formed between the element isolation portions 123. An intermediate layer 121 made of organic SiO ₂ is formed on the element isolation portion 123 and on the upper surfaces of the lenses 126a, 126b, and 127c. The upper surface of the intermediate layer 121 and the upper surface of the lens 126 are formed to be on the same plane, and the color filter 127 is formed on the upper surface. The color filter 127 is formed as an aggregate of regions 127a, 127b, and 127c having any one color among R (red), G (green), and B (blue) corresponding to each lens. Usually, the light incident on the region 127a of the color filter 127 is condensed on the light receiving unit 122 by the lens 126a located immediately below the region 127a.
Japanese Patent Laid-Open No. 07-74331

  However, in the solid-state imaging device according to the conventional example, as illustrated in FIG. 17, when light is incident at a large angle with the normal direction on the upper surface of the color filter 127, the light that has passed through the region 127 b of the color filter 127 is It reaches the adjacent light receiving part 122 instead of the light receiving part 122 just below the region 127b that should be originally reached. In other words, the light receiving unit 122 positioned immediately below the region 127a of the color filter 127 has a disadvantage that both light that passes through the region 127a of the color filter 127 and light that passes through the region 127b reach, and thus color mixing occurs. . As described above, in the solid-state imaging device having the top filter structure, color mixing is likely to occur.

  Further, in the solid-state imaging device according to the conventional example, since a flat region as the element separation unit 123 exists between adjacent lenses 126, the light incident on the element separation unit 123 is not condensed on the light receiving unit 122 by the lens 126. . As described above, the solid-state imaging device according to the conventional example has a problem in that it is difficult to improve sensitivity because light that is not condensed on the light receiving unit 122 is generated.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide a solid-state imaging device capable of reducing the influence of color mixing and improving sensitivity. .

Means for Solving the Problems and Effects of the Invention

  In order to achieve the above object, a solid-state imaging device according to one aspect of the present invention includes a light receiving portion formed on a substrate, a lens for condensing light on the light receiving portion, and a first provided on the lens. One resin layer, a color filter provided on the first resin layer and having any one of a plurality of colors, a second resin layer provided on the color filter, and a second And a glass substrate provided on the resin layer.

  In the solid-state imaging device according to this one aspect, as described above, the second resin layer is provided on the color filter and the glass substrate is provided on the second resin layer, so that the refractive index is larger than that of air. Light obliquely incident on the glass substrate is refracted so as to approach the downward normal direction on the upper surface of the glass substrate, passes through the glass substrate and the second resin layer, and reaches the color filter. For this reason, when light enters the color filter, the angle formed between the light and the normal direction on the upper surface of the color filter is reduced, so that the light that is not collected on the light receiving portion can be reduced. As a result, the sensitivity of the solid-state imaging device can be improved.

  In the solid-state imaging device according to the above aspect, preferably, a plurality of the units are arranged, and the colors of the color filters of the adjacent units are different from each other. As described above, by providing the second resin layer on the color filter and providing the glass substrate on the second resin layer, light incident obliquely on the glass substrate having a refractive index larger than that of air is On the upper surface of the glass substrate, the light is refracted so as to approach the downward normal direction, passes through the glass substrate and the second resin layer, and reaches the color filter. Therefore, when the light that has passed through the second resin layer enters the color filter, the angle formed between the light and the normal direction on the upper surface of the color filter can be reduced. The light can be prevented from entering the light receiving unit adjacent to the light receiving unit. Thereby, the influence of color mixing in the solid-state imaging device having the top filter structure can be reduced. Note that the phrase “a plurality of units are arranged” means not only a case where a plurality of units are arranged in a block but also a case where a plurality of units are integrally formed.

  In the solid-state imaging device according to the above aspect, the refractive index of the lens is preferably larger than the refractive index of the first resin layer. If comprised in this way, since the condensing rate by a lens can be raised, it becomes possible to improve the sensitivity of a solid-state image sensor.

  In the solid-state imaging device according to the above aspect, the adjacent lenses are preferably connected so as not to include a substantially flat region at the boundary, and the boundary has a predetermined thickness. With this configuration, unlike the case of having a substantially flat region that does not have the function of condensing light on the light receiving unit, incident light that is not collected on the light receiving unit is generated at the boundary between adjacent lenses. Can be suppressed. As a result, the light condensing rate to the light receiving unit can be improved as compared with the case where the boundary part between adjacent lenses has a substantially flat region that does not have the function of condensing light to the light receiving unit. It becomes possible to improve the sensitivity of the solid-state imaging device. Further, by forming the boundary portion of the adjacent lens to have a predetermined thickness, moisture enters from the boundary portion of the adjacent lens compared to the case where the thickness of the boundary portion of the adjacent lens is 0. Can be suppressed. Thereby, the moisture resistance of a solid-state imaging device can be improved.

  In the solid-state imaging device according to the above aspect, the lens made of an inorganic insulator preferably has a refractive index of 1.6 or more. If comprised in this way, the microlens which has a big refractive index can be formed easily. Thereby, since more light can be condensed on the light receiving unit, the sensitivity of the solid-state imaging device can be improved.

  In the solid-state imaging device according to the above aspect, the plurality of lenses are preferably formed of a single layer. With this configuration, when the lens is formed of a plurality of layers, reflection of light generated at the boundary surface can be prevented, so that more light can be collected on the light receiving unit. Therefore, the sensitivity of the solid-state imaging device can be improved.

  In the solid-state imaging device according to the above aspect, the plurality of lenses are preferably connected so as not to include a substantially flat region at the boundary between adjacent lenses, and have a radius of curvature of 2 μm or more and 7 μm or less. doing. With this configuration, unlike the case of having a substantially flat region that does not have the function of condensing light on the light receiving unit, incident light that is not collected on the light receiving unit is generated at the boundary between adjacent lenses. Can be suppressed. Further, since the lens is formed to have a radius of curvature of 2 μm or more and 7 μm or less, more light can be condensed on the light receiving unit. Thereby, the sensitivity of a solid-state imaging device can be improved.

  In the solid-state imaging device according to the one aspect described above, preferably, the plurality of lenses are connected so as not to include a substantially flat region at a boundary portion between adjacent lenses, and a distance between the boundary portions between adjacent lenses. The ratio of the distance between the substrate and the top of the lens is 0.7 or more and 1.3 or less. With this configuration, unlike the case of having a substantially flat region that does not have the function of condensing light on the light receiving unit, incident light that is not collected on the light receiving unit is generated at the boundary between adjacent lenses. Can be suppressed. Further, the light focused by the lens can be focused on a region near the center having high sensitivity in the light receiving unit. Thereby, the sensitivity of a solid-state imaging device can be improved easily.

  In the solid-state imaging device according to the above aspect, the lenses are preferably formed at a predetermined interval so as to embed a gap between the first film having a convex shape and the adjacent first film. And a second film that is larger than the first resin layer and has a refractive index equal to or lower than that of the first film. If comprised in this way, the light which injects from the upper direction of the gap | interval of an adjacent 1st film | membrane can be entered into a 2nd film | membrane. At this time, light incident on the second film from above the gap between the adjacent first films is refracted inward because the refractive index of the second film is larger than the refractive index of the first resin layer. As a result, not only the light incident from above the first film but also the light incident from above the gap between the adjacent first films can be condensed on the light receiving section through the second film. The sensitivity of the solid-state imaging device can be improved. Further, if the second film has an intermediate refractive index between the refractive index of the first resin layer and the refractive index of the first film, the second film and the first resin layer are The difference in refractive index between the film and the film can be reduced. As a result, it is possible to suppress an increase in the amount of reflection of light incident on the first film from the first resin layer due to the large difference in the refractive index, thereby reducing the sensitivity of the solid-state imaging device. Can be suppressed.

  The solid-state imaging device according to the above aspect preferably further includes a concave third film formed on the plurality of light receiving parts, and the lens is embedded in the concave part of the third film. A fourth film having a refractive index larger than that of the third film and having a downwardly convex shape. With this configuration, since the refractive index of the fourth film is larger than the refractive index of the third film, the fourth film projects below the fourth film, which is the boundary surface between the fourth film and the third film. The light can be refracted inward on the surface. Thereby, it is not necessary to provide a refractive index difference between the first resin layer and the fourth film. As a result, since the material of the first resin layer can be selected without considering the refractive index difference of the fourth film, the degree of freedom in selecting the material of the first resin layer can be expanded. .

  In the solid-state imaging device according to the above aspect, the incident line of light that maximizes the angle formed with the normal line on the upper surface of the color filter among the light that substantially forms an image on the plurality of light receiving units, and the upper surface of the color filter Where W / 2h ≧ tan α is satisfied, where α is the angle formed by the normal line, and h is the height from the color filter upper surface to the deepest part of the lens boundary, and W is the width between the lens boundaries. With this configuration, the incident angle to the color filter, which is light that causes color mixing that cannot be substantially ignored, is α, and a position away from the lens boundary by a distance of W / 2. Therefore, the influence of color mixing can be reduced by adjusting W and h. Therefore, the influence of color mixture in the solid-state imaging device having the top filter structure can be reduced.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(First embodiment)
FIG. 1 is a side view showing the overall configuration of the solid-state imaging device according to the first embodiment of the present invention. FIG. 2 is a sectional view of a CCD image sensor (CCD: Charge Coupled Device) used in the solid-state imaging device according to the first embodiment shown in FIG. FIG. 3 is a bottom view of the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. FIG. 4 is a top view of the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. FIG. 5 is a sectional view of the CCD portion of the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. FIG. 6 is a cross-sectional view for explaining the structure of the microlens of the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. First, the structure of a solid-state imaging device using the CCD image sensor according to the first embodiment of the present invention will be described with reference to FIGS.

  As the entire structure of the solid-state imaging device according to the first embodiment, a ceramic holder 2 is provided on a printed circuit board 1 as shown in FIG. A ceramic lens holder 3 is fixedly attached to the upper portion of the holder 2. The lens holder 3 supports an optical lens 4 for collecting reflected light from the subject.

Here, in the first embodiment, the CCD image sensor 8 is provided on the printed circuit board 1. The CCD image sensor 8 is attached to the upper surface of the printed circuit board 1 by solder balls 9 provided on the lower surface of the CCD image sensor 8. An air layer 5, an infrared cut filter 6 and an air layer 7 are interposed between the CCD image sensor 8 and the optical lens 4. The infrared cut filter 6 is provided to cut light in the infrared region from incident light, and has a thickness of about 0.5 mm to about 1 mm. The infrared cut filter 6 is formed by depositing a metal film on a SiO ₂ glass substrate.

  A DSP (Digital Signal Processor) 10 that performs processing of an image pickup signal supplied from the CCD image sensor 8 is provided on the lower surface of the printed circuit board 1.

  The CCD image sensor 8 includes a CCD 11 as shown in FIG. On the upper surface of the CCD 11, a glass substrate 13 is integrally provided via a resin layer 12b made of an acrylic resin. The resin layer 12b is an example of the “second resin layer” in the present invention. A glass substrate 15 is integrally provided on the lower surface of the CCD 11 via a resin layer 14. On the lower surface of the glass substrate 15, as shown in FIGS. 2 and 3, a plurality of solder balls 9 for mounting the CCD image sensor 8 on the printed circuit board 1 are provided. A wiring 16 is connected to the plurality of solder balls 9. As shown in FIG. 2, the wiring 16 is disposed along the side surface from the lower surface of the CCD image sensor 8 and is connected to the CCD 11.

  Further, as shown in FIG. 4, the CCD image sensor 8 includes an imaging unit 17 that performs photoelectric conversion, an accumulation unit 18 that temporarily stores the photoelectric conversion by the imaging unit 17, and an accumulation unit 18. Are provided with a transfer unit 19 for transferring the charge stored in the output unit (not shown) and an output unit (not shown) for outputting the charge transferred from the transfer unit 19. The CCD image sensor 8 has a so-called frame transfer system configuration.

  As an operation of the CCD image sensor 8, first, in the imaging unit 17, photoelectric conversion corresponding to the irradiated light image is performed. Then, the photoelectrically converted charges are transferred (frame shift) from the imaging unit 17 to the storage unit 18 for each frame. The charge pattern formed in the storage unit 18 is transferred to an output unit (not shown) line by line by the transfer unit 19. A signal transferred to the output unit (not shown) is output to a signal processing system such as the DSP 10 (see FIG. 1) as an imaging signal of the CCD image sensor 8.

  Next, a cross-sectional structure of the CCD 11 portion of the CCD image sensor 8 used in the solid-state imaging device according to the first embodiment will be described with reference to FIG. The CCD 11 portion of the CCD image sensor 8 according to the first embodiment includes a Si substrate 20. The Si substrate 20 is an example of the “substrate” in the present invention. In a predetermined region on the surface of the Si substrate 20, a pixel separation unit 21 for separating pixels is formed. In addition, a light receiving portion 22 having a photoelectric conversion function for converting incident light into signal charges is formed between the pixel separation portions 21 of the Si substrate 20. The light receiving unit 22 is formed so that the vicinity of the center of the region where the light receiving unit 22 is formed (a region about 1/3 of the region where the light receiving unit 22 is formed) has high sensitivity to incident light. An interlayer insulating film 23 having a thickness of about 0.24 μm is formed on the Si substrate 20 on which the pixel separation portion 21 and the light receiving portion 22 are formed. A light shielding film 24 having a thickness of about 1.0 μm and a width of about 0.2 μm to about 0.4 μm is formed in a predetermined region on the interlayer insulating film 23. Although not shown, the light shielding film 24 has a structure in which W (tungsten) and a polysilicon film are laminated. The light shielding film 24 has a function of preventing light from entering a predetermined region. An interlayer insulating film 25 made of a silicon oxide film having a thickness of about 1.5 μm is formed so as to cover the light shielding film 24 and the interlayer insulating film 23.

  On the interlayer insulating film 25, a plurality of microlenses 26 for condensing light on the light receiving portion 22 are formed corresponding to each of the plurality of light receiving portions 22. The micro lens 26 is an example of the “lens” in the present invention. On the interlayer insulating film 25, a plurality of microlenses 26 for condensing light on the light receiving portion 22 are formed corresponding to the plurality of light receiving portions 22, respectively. Further, a resin layer 12a made of an acrylic resin having a refractive index of about 1.5 is provided on the microlens. The resin layer 12a is an example of the “first resin layer” in the present invention. On the resin layer 12a, one of red (R), green (G), and blue (B) is provided by an organic polymer material corresponding to each of the micro lenses 26. A color filter 27 having a thickness of about 0.5 μm to 1.2 μm is formed. Here, since the refractive index of the color filter is formed of an organic polymer material, it is substantially the same as the refractive index (about 1.5) of the resin layer 12a. A resin layer 12b made of an acrylic resin having a refractive index of about 1.5 is provided on the color filter 27, and a glass having a thickness of about 0.1 mm to 0.6 mm is formed on the upper surface. A substrate 13 (refractive index: about 1.5) is integrally provided (see FIG. 2). An arbitrary light receiving portion 22, a microlens 26 positioned immediately above the light receiving portion 22, a region of the resin layer 26a positioned on the microlens 26, and a position on the region of the resin layer 26a. A portion composed of a color filter 27 region, a resin layer 12b region located on the color filter 27 region, and a glass substrate 13 region located on the resin layer 12b region, It is an example of the “unit” in the present invention. The colors of the color filters of adjacent units are different.

  Here, in the first embodiment, as shown in FIG. 5, the adjacent microlenses 26 are connected so as not to include a substantially flat region in the boundary portion 26a. The microlens 26 is formed by a single layer of a SiN film (silicon nitride film) having a refractive index of about 2.0. SiN is an example of the “inorganic insulator” in the present invention. The microlens 26 is formed so that the radius of curvature R shown in FIG. 6 is 2 μm or more and 7 μm or less. Further, the ratio (aspect ratio: H / W) of the distance H between the Si substrate 20 and the top of the microlens 26 with respect to the distance W between the boundary portions 26a of the adjacent microlenses 26 is 0.7 or more. It is comprised so that it may become 1.3 or less. Further, the boundary portion 26a of the adjacent microlenses 26 is formed so that the thickness x of the boundary portion 26a is 10 nm or more.

  In the first embodiment, as described above, on the color filter 27, the resin layer 12b having a refractive index larger than air (refractive index: 1.0) and the glass substrate 13 (both refractive indexes: about 1.5). Therefore, light incident on the glass substrate 13 at an angle θ is refracted and passes through the glass substrate and the resin layer 12b, and enters the color filter 27 at an angle α (see FIG. 7). At this time, the relationship among the refractive index n of air, the refractive index n1 of the resin layer 12b, the angle θ, and the angle α can be expressed by the following equation (1).

n / n1 = sin α / sin θ (1)
According to Expression (1), the incident angle α of light to the color filter 27 is always smaller than the incident angle θ of light to the glass substrate 13. Therefore, the incident angle α of the light to the color filter 27 is always smaller than when the resin layer 12b and the glass substrate 13 are not provided on the color filter 27.

  FIG. 8 shows light that causes color mixing when light enters the color filter 27 at an angle α1, and FIG. 9 shows the cause of color mixing when light enters the color filter 27 at an angle α2. Shows the light. Note that α1> α2. Next, the relationship between the angle α of light incident on the color filter 27 and the color mixture will be described with reference to FIGS.

  First, referring to FIG. 8, the light 28a incident on the color filter 27 from the position indicated by A in the drawing at an angle α1 passes through both the color filter region 27a and the region 27b and reaches the light receiving unit 22a. Cause color mixing. The light 28b incident from the position indicated by B in the figure at the angle α1 passes only the color filter region 27b and reaches the light receiving unit 22a. Since the light 28b that has passed through the color filter region 27b should originally reach the light receiving portion 22b, the light 28b also causes color mixing. That is, among the light incident on the color filter 27 at the angle α1, the light that has passed through the region 29a indicated by the hatched portion causes color mixing.

  Referring to FIG. 9, the light 28a incident on the color filter 27 from the position indicated by A in the drawing at an angle α2 larger than the angle α1 passes through both the color filter region 27a and the region 27b and reaches the light receiving unit 22a. This causes color mixing. Further, the light 28b incident from the position indicated by B in the drawing at an angle α2 passes through only the color filter region 27b and reaches the light receiving unit 22a. Since the light 28b that has passed through the color filter region 27b should originally reach the light receiving portion 22b, the light 28b also causes color mixing. That is, among the light incident on the color filter 27 at the angle α2, the light that has passed through the region 29b indicated by the hatched portion causes color mixing.

  Here, comparing the region 29a in FIG. 8 with the region 29b in FIG. 9, it can be seen that the region 29a is narrower than the region 29b. That is, when the angle of light incident on the color filter 27 is smaller (α1), the region through which light causing color mixing passes is smaller than when the angle of light incident on the color filter 27 is larger (α2). Since it is small, the influence of color mixing can be reduced. Therefore, compared with the conventional solid-state imaging device, the solid-state imaging device according to the first embodiment that can reduce the angle at which light enters the color filter 27 is less affected by color mixing than the conventional solid-state imaging device. It becomes possible to reduce.

  Next, with reference to FIGS. 10 to 12, the incident angle α of light to the color filter 27 in the solid-state imaging device according to the first embodiment and the top surface of the color filter 27 to the deepest part at the boundary of the microlens 26. The relationship between the height h and the width W between the boundaries of the microlenses 26 will be described. Here, when the width between the boundary portions 26a of the microlens 26 is W, the direction from the position A on the upper surface of the color filter 27 located directly above the boundary portion 26a of the microlens 26 is opposite to the light traveling direction. The amount of light incident on the region up to the position B on the upper surface of the color filter 27 that is separated by a distance of W / 2 in the direction of the microlens 26 adjacent to the side toward the light is W from the position A to the light traveling direction side. Since the amount of light that does not cause color mixing does not exceed the area up to position D on the upper surface of the color filter 27 that is separated by a distance of / 2, the color mixing caused by the light incident on the area from position A to position B The effect is described as being virtually negligible.

  Referring to FIG. 10, when the incident angle of light to color filter 27 is α and the height from the upper surface of color filter 27 to the deepest portion of boundary portion 26 a of microlens 26 is ha, it passes through region 30. The resulting light causes color mixing. At this time, the light causing the color mixture is from the position A on the upper surface of the color filter 27 located directly above the boundary portion 26a of the micro lens 26, and the direction of the micro lens adjacent to the side in the direction opposite to the light traveling direction. Since the light is incident on the color filter in the region up to the position B on the upper surface of the color filter 27 that is separated by a distance of W / 2, the influence of the color mixture caused by this light can be substantially ignored.

  On the other hand, in FIG. 11, when the incident angle of light to the color filter 27 is α and the height from the upper surface of the color filter 27 to the deepest part at the boundary of the microlens 26 is hb (hb> ha), the color mixture is performed. A region 31 through which the light that causes the light passes is shown. At this time, the light causing the color mixture is from the position A on the upper surface of the color filter 27 located directly above the boundary portion 26a of the micro lens 26, and the direction of the micro lens adjacent to the side in the direction opposite to the light traveling direction. Since the light enters the color filter 27 in a region up to the position C on the upper surface of the color filter 27 that is further away from the distance W / 2, color mixing that cannot be ignored occurs. That is, the influence of the color mixture that causes the light passing through the region 31a can be substantially ignored, but the effect of the color mixture that causes the light that passes through the region 31b cannot be substantially ignored. From the above, when the incident angle of light to the color filter 27 is α, the influence of color mixing depends on the height h from the upper surface of the color filter 27 to the deepest portion in the boundary portion 26a of the microlens 26. I understand.

  Next, referring to FIG. 12, when the incident angle of light to the color filter 27 is α and the height from the upper surface of the color filter 27 to the deepest part at the boundary of the microlens 26 is h, the influence of the color mixture is affected. The limit height hc that can be ignored will be described. As described above, a distance of W / 2 is separated from the position A on the upper surface of the color filter 27 located directly above the boundary portion of the micro lens 26 in the direction of the micro lens adjacent to the side opposite to the light traveling direction. The amount of light incident on the region up to the position B on the upper surface of the color filter 27 is in the region from the position A to the position D on the upper surface of the color filter 27 that is a distance W / 2 away from the light traveling direction. Since the amount of incident light that does not cause color mixing is not exceeded, the influence of color mixing due to light incident on the region from position A to position B can be substantially ignored. Therefore, when the light incident on the color filter 27 passes through the position B, there is a limit that the influence of the color mixture can be substantially ignored. That is, from the position B, the light incident on the color filter 27 crosses the normal line on the upper surface of the color filter 27 drawn so as to pass through the deepest portion in the boundary portion 26 a of the microlens 26 and the upper surface of the color filter 27. Is the maximum height hc at which the influence of color mixing can be ignored. From FIG. 12, it is understood that the incident angle α of the light to the color filter 27, the limit height hc, and W / 2 have the relationship of the following equation (2).

W / 2hc = tanα (2)
Here, if the height h from the upper surface of the color filter 27 to the deepest portion in the boundary portion 26a of the microlens 26 is smaller than hc in the equation (2), the influence of the color mixture can be substantially ignored. Therefore, the condition when the influence of the color mixture can be substantially ignored is expressed by the following equation (3).

W / 2h ≧ tan α (3)
In the solid-state imaging device according to the first embodiment, the distance W between adjacent microlenses and the height h from the upper surface of the color filter 27 to the deepest portion at the boundary of the microlens 26 are set so as to satisfy the expression (3). By adjusting, the influence of color mixing can be substantially ignored. Therefore, the influence of color mixture in the solid-state imaging device having the top filter structure can be reduced.

  In the first embodiment, as described above, adjacent microlenses 26 are connected to the boundary portion 26a of the adjacent microlenses 26 by connecting the adjacent microlenses 26 so as not to include a substantially flat region in the boundary portion 26a. Unlike the case of having a substantially flat region that does not have the function of condensing light on the light receiving unit 22, it is possible to suppress the occurrence of incident light that is not collected at the boundary portion 26a of the adjacent microlens 26. it can. Thereby, the light condensing rate to the light receiving part 22 is improved as compared with the case where the boundary part 26a of the adjacent micro lens 26 has a substantially flat region that does not have the function of condensing light to the light receiving part 22. Therefore, the sensitivity of the solid-state imaging device can be improved.

  In the first embodiment, the microlens 26 is formed of a SiN film having a refractive index of about 2.0, so that the microlens 26 is formed of resin (refractive index: about 1.5). A microlens 26 having a large refractive index (about 2.0) can be formed. Thereby, the light collection rate by the microlens 26 can be improved. In addition, since the microlens 26 is formed of a single layer, the interface between the plurality of layers is not formed as in the case where the microlens 26 is formed of a plurality of layers, so that light is not reflected at the interface between the plurality of layers. Therefore, the sensitivity of the solid-state imaging device can be improved.

  In the first embodiment, the ratio (aspect ratio: H / W) of the distance H between the Si substrate 20 and the top of the microlens 26 to the distance W between the boundary portions 26a of the adjacent microlenses 26 is 0. By configuring so as to be not less than 0.7 and not more than 1.3, the light focused by the microlens 26 can be easily focused near the center of the light receiving unit 22 having high sensitivity. Thereby, the sensitivity of a solid-state imaging device can be improved easily.

  In the first embodiment, the boundary portion 26a of the adjacent microlens 26 is formed to have a thickness of 10 nm or more, thereby effectively suppressing moisture from entering from the boundary portion 26a of the adjacent microlens 26. can do. Thereby, the moisture resistance of a solid-state imaging device can be improved. Further, by forming the boundary portion 26a of the adjacent microlens 26 so as to have a thickness of 10 nm or more, it is not necessary to separately provide a passivation film on the microlens 26 in order to prevent moisture from entering. It is possible to suppress an increase in the thickness of the solid-state imaging device.

  In the first embodiment, the glass substrate 13 (refractive index: about 1.5) is provided integrally with the CCD 11 via the second resin layer 12b (refractive index: about 1.5), so that the CCD 11 Since the strength can be improved, the CCD 11 can be prevented from being damaged when the lower surface of the Si substrate 20 is polished for adjusting the thickness of the Si substrate 20 or improving the flatness. Moreover, since the glass substrate 13 has a refractive index (about 1.5) comparable as the 2nd resin layer 12b, it suppresses that reflection of light arises in the interface of the glass substrate 13 and the resin layer 12. FIG. Can do. Therefore, it is possible to prevent the sensitivity of the solid-state imaging device from being lowered.

In the above description, as an example, from the position A on the upper surface of the color filter 27 located directly above the boundary portion 26a of the microlens 26, in the direction of the microlens adjacent to the side opposite to the light traveling direction. Although it is assumed that the influence of the color mixture due to the light incident on the region up to the position B on the upper surface of the color filter 27 separated by a distance of W / 2 is substantially negligible, the application of the present invention is limited to the above-described conditions. It is not a thing. For example, in order to further reduce the influence of color mixing, the position B on the upper surface of the color filter 27 may be a position separated from the position A by a distance of W / 4 or W / 5.5. At this time, the expression (3) is modified such that W / 4h ≧ tanα or W / 5.5h ≧ tanα.
(Second Embodiment)
The solid-state imaging device according to the second embodiment is obtained by changing the structure of the CCD unit 11 of the CCD image sensor in the solid-state imaging device according to the first embodiment. FIG. 13 is a cross-sectional view of the CCD unit 11a of the CCD image sensor used in the solid-state imaging device according to the second embodiment. With reference to FIG. 13, the structure of the CCD unit 11a of the CCD image sensor according to the second embodiment of the present invention will be described.

Referring to FIG. 13, the CCD unit 11a of the CCD image sensor according to the second embodiment of the present invention has a photoelectric conversion function that converts light incident on a predetermined region of the Si substrate 32 into signal charges. 33 is formed. On the Si substrate 32 on which the light receiving portion 33 is formed, an interlayer insulating film 34 made of SiO ₂ having a thickness of about 0.6 μm is formed. This interlayer insulating film 34 made of SiO ₂ has a refractive index of about 1.46. A light shielding film 35 made of Al having a thickness of about 150 nm (about 0.15 μm) is formed in a predetermined region on the interlayer insulating film 34. The light shielding film 35 has a function of preventing light from entering a predetermined region. An interlayer insulating film 36 made of SiO ₂ having a thickness of about 1.7 μm is formed so as to cover the light shielding film 35 and the interlayer insulating film 34. This interlayer insulating film 36 made of SiO ₂ has a refractive index of about 1.46.

  Here, in the second embodiment, as shown in FIG. 13, a SiN film 37 having a convex portion 37d having a convex shape upward and a flat portion 37e is formed on the interlayer insulating film. The convex portion 37d of the SiN film 37 is disposed above the light receiving portion 33 and above a partial region of the light shielding film 35, and has a height of about 1.52 μm from the flat portion 37e and about 2.times. It has a radius of curvature of 82 μm. The flat portion 37e of the SiN film 37 is disposed above a partial region of the light shielding film 35, and has a width of about 0.2 μm and a thickness of about 0.3 μm. This SiN film 37 has a refractive index of about 2.05. On the SiN film 37, an SiN film 38 having a thickness of about 0.1 μm is formed so as to bury the flat portion 37e of the SiN film 37. This SiN film 38 does not have a flat region at the boundary between adjacent SiN films 37 and has a refractive index of about 2.05. The SiN film 37 and the SiN film 38 have a function as a microlens that collects light. The SiN film 37 is an example of the “lens” and “first film” in the present invention, and the SiN film 38 is an example of the “lens” and “second film” in the present invention.

  On the SiN film 38, a resin layer 39 made of an acrylic resin having a refractive index of about 1.5 is provided. The resin layer 39 is an example of the “first resin layer” in the present invention. On the resin layer 39, red (R), green (G), and green (G) are formed by a polymer compound material corresponding to each of the convex regions of the SiN films 37 and 38 that function as microlenses. Further, a color filter 27 having any one color of blue and blue (B) and having a thickness of about 0.5 μm to 1.2 μm is formed. Here, the refractive index of the color filter 27 is substantially the same as the refractive index (about 1.5) of the resin layer 39. A resin layer 12b (refractive index: about 1.5) made of the same material as that of the resin layer 39 is provided on the color filter 27. Further, a thickness of about 0.1 mm to 0.6 mm is provided on the upper surface. Glass substrate 13 (refractive index: about 1.5) is integrally provided (see FIG. 2). The resin layer 12b is an example of the “second resin layer” in the present invention. Further, an arbitrary light receiving portion 33, a microlens 26 positioned right above the light receiving portion 33, a region of the resin layer 39 positioned above the microlenses 37 and 38, and a region above the region of the resin layer 39 A portion constituted by a region of the color filter 27 located in the region, a region of the resin layer 12b located on the region of the color filter 27, and a region of the glass substrate 13 located on the region of the resin layer 12b. Is an example of the “unit” in the present invention. The colors of the color filters of adjacent units are different.

  In the solid-state imaging device according to the second embodiment, as in the solid-state imaging device according to the first embodiment, the resin layer 12b having a refractive index larger than that of air (refractive index: 1.0) and the glass substrate 13 are formed on the color filter 27. (Both have a refractive index of about 1.5) (see FIG. 2). Therefore, also in the solid-state imaging device according to the second embodiment, the incident angle α of light to the color filter 27 is always smaller than when the resin layer 12b and the glass substrate 13 are not provided on the color filter 27. Thereby, in the solid-state imaging device according to the second embodiment, the influence of color mixing can be reduced as in the solid-state imaging device according to the first embodiment.

  In the solid-state imaging device according to the second embodiment, the incident angle of light to the color filter 27 is α, and the height from the upper surface of the color filter 27 to the deepest portion at the boundary of the SiN film 38 as a microlens. And h is the width between the boundaries of the microlenses, and if the height h is adjusted to satisfy the same expression (3) as that of the solid-state imaging device according to the first embodiment, the influence of the color mixture is substantially reduced. Can be ignored.

Moreover, in the solid-state imaging device according to the second embodiment, as described above, the SiN film 38 is embedded on the SiN film 37 so as to bury the flat portion 37e disposed above the light receiving portion 33 of the SiN film 37. By forming the light, light incident from above the flat portion 37 e of the SiN film 37 can be incident on the SiN film 37. At this time, the light incident on the SiN film 38 from above the flat portion 37e of the SiN film 37 has a refractive index (about 2.05) of the SiN film 38 larger than that of the resin layer 39 (about 1.5). Therefore, it refracts inward. Thereby, light incident from above the SiN film 37 e can also be condensed on the light receiving unit 33 through the SiN film 37. Therefore, the sensitivity of the solid-state imaging device can be improved.
(Third embodiment)
The solid-state imaging device according to the third embodiment is obtained by changing the CCD unit 11 of the CCD image sensor in the solid-state imaging device according to the first embodiment. FIG. 14 is a cross-sectional view of the CCD unit 11b of the CCD image sensor used in the solid-state imaging device according to the third embodiment. With reference to FIG. 14, the structure of the CCD unit 11b of the CCD image sensor according to the third embodiment of the present invention will be described.

Referring to FIG. 14, in the CCD unit 11b of the CCD image sensor according to the third embodiment, a light receiving unit 41 having a photoelectric conversion function for converting incident light into signal charges is formed in a predetermined region of the Si substrate 40. ing. On the Si substrate 40 on which the light receiving portion 41 is formed, an interlayer insulating film 42 made of SiO ₂ having a thickness of about 0.6 μm is formed. This interlayer insulating film 42 made of SiO ₂ has a refractive index of about 1.46. A light shielding film 43 made of Al having a thickness of about 150 nm (about 0.15 μm) is formed in a predetermined region on the interlayer insulating film 42. The light shielding film 43 has a function of preventing light from entering a predetermined region. An interlayer insulating film 44 made of SiO ₂ having a thickness of about 1.7 μm is formed so as to cover the light shielding film 43 and the interlayer insulating film 42. This interlayer insulating film 44 made of SiO ₂ has a refractive index of about 1.46.

Here, in the third embodiment, as shown in FIG. 14, a columnar portion 46 made of SiO ₂ is formed in an insensitive region on the interlayer insulating film 44. The columnar portions 46 have a width of about 0.13 μm and a height of about 2.5 μm, and are lattice-shaped when viewed in plan so that the distance between adjacent columnar portions 46 is an interval of about 5 μm. Is formed. Further, the columnar portion 46 is formed in a rectangular shape having substantially the same width in the upper portion and the lower portion. A concave SOG film 45 is formed so as to cover the upper surface of the interlayer insulating film 44 and the side surfaces of the columnar portion 46. The SOG film 45 has a refractive index of about 1.4. The flat part 45a of the SOG film 45 is formed above the light receiving part 41 and has a width of about 2 μm and a thickness of about 0.5 μm. The curved portion 45b of the SOG film 45 is disposed above the vicinity of the light shielding film 43 and has a radius of curvature of about 2.3 μm. In addition, a SiN film 47 having a thickness of about 2 μm is embedded in the concave portion formed of the flat portion 45 a and the curved surface portion 45 b of the SOG film 45. As a result, the SiN film 47 has a downwardly convex shape. The SiN film 47 having a convex shape below has a refractive index of about 2.05. The convex lower surface of the SiN film 47 functions as a microlens that collects light. The SOG film 45 is an example of the “third film” in the present invention, and the SiN film 47 is an example of the “lens” and the “fourth film” in the present invention.

  A resin layer 48 made of an acrylic resin having a refractive index of about 1.5 is provided on the SiN film 47 and the columnar portion 46. The resin layer 48 is an example of the “first resin layer” in the present invention. On this resin layer 48, red (R), green (G), and blue (with a high molecular compound material corresponding to each of the convex regions below the SiN film 47 functioning as a microlens. A color filter 27 having any one color of B) and having a thickness of about 0.5 μm to 1.2 μm is formed. Here, the refractive index of the color filter 27 is substantially the same as the refractive index of the resin layer 48 (about 1.5). A resin layer 12b (refractive index: about 1.5) made of the same material as that of the resin layer 48 is provided on the color filter 27. Further, a thickness of about 0.1 mm to 0.6 mm is provided on this upper surface. Glass substrate 13 (refractive index: about 1.5) is integrally provided (see FIG. 2). The resin layer 12b is an example of the “second resin layer” in the present invention. Further, an arbitrary light receiving portion 41, a microlens 47 positioned right above the light receiving portion 41, a region of the resin layer 48 positioned on the microlens 47, and a position on the region of the resin layer 48 A portion composed of a color filter 27 region, a resin layer 12b region located on the color filter 27 region, and a glass substrate 13 region located on the resin layer 12b region, It is an example of the “unit” in the present invention. The colors of the color filters of adjacent units are different.

  In the solid-state imaging device according to the third embodiment, as in the solid-state imaging device according to the first embodiment, the resin layer 12b having a refractive index larger than that of air (refractive index: 1.0) and the glass substrate 13 are formed on the color filter 27. (Both refractive index: about 1.5) (see FIG. 2), the incident angle α of the light to the color filter 27 is also a resin on the color filter 27 in the solid-state imaging device according to the third embodiment. Compared to the case where the layer 12b and the glass substrate 13 are not provided, it is always smaller. Thereby, in the solid-state imaging device according to the third embodiment, the influence of color mixing can be reduced as in the solid-state imaging device according to the first embodiment.

  As shown in FIG. 14, in the solid-state imaging device according to the third embodiment, the incident angle of light to the color filter 27 is α, and the height from the upper surface of the color filter 27 to the upper surface of the SiN film 47 as a microlens. When the height h is set to h and the width between the boundaries of the microlenses is set to W, adjusting the height h to satisfy the same expression (3) as that of the solid-state imaging device according to the first embodiment substantially reduces the influence of color mixing. Can be ignored.

  In the third embodiment, as described above, the concave SOG film 45 on the light receiving unit 41 and the refractive index (about 2.05) larger than the refractive index (about 1.4) of the SOG film 45 are provided. And a SiN film 47 having a convex shape formed so as to embed the concave portion of the SOG film 45, thereby allowing light incident on the SOG film 45 from the SiN film 47 as a microlens to be incident on the SOG film 45. The film can be refracted inward by a surface (lower surface) that protrudes under the SiN film 47 that is a boundary surface between the film 47 and the SOG film 45. Thereby, light incident on the SOG film 45 from the downwardly convex SiN film 47 can be efficiently collected, and thus the sensitivity of the solid-state imaging device can be improved.

  In the third embodiment, since light can be refracted on the lower surface of the SiN film 47 that is a boundary surface between the SiN film 47 and the SOG film 45, the refractive index of the region on the SiN film 47 is taken into consideration. There is no need. Therefore, the degree of freedom in selecting the material of the resin layer 12b formed on the SiN film 47 can be expanded while realizing improvement in sensitivity of the solid-state imaging device.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the above-described embodiment, the example in which the present invention is applied to the CCD image sensor has been described. However, the present invention is not limited thereto, and may be applied to other image sensors having a top filter structure other than the CCD image sensor. . Even when the present invention is applied to an image sensor having another top filter structure such as a CMOS image sensor, it is possible to obtain the same effects as those of the above-described embodiment such that the influence of color mixing can be reduced and the sensitivity can be improved. Can do.

  In the above embodiment, the present invention is applied to a CCD image sensor having a top filter structure that adopts a frame transfer method. However, the present invention is not limited to this, and other transfer methods such as a so-called interline transfer method are adopted. The present invention may be applied to a CCD image sensor having a top filter structure. Even when the present invention is applied to a CCD image sensor having a top filter structure that employs another transfer method, the same effects as in the above-described embodiment can be obtained, such as the effect of color mixing being reduced and the sensitivity being improved. Can do.

  In the above embodiment, the lens holder 3 that supports the optical lens 4 is fixedly attached to the holder 2 so that the optical lens 4 is fixed. However, the present invention is not limited to this, and the optical lens 4 is supported. The optical lens 4 may be movable so that the lens holder 3 can be moved in the vertical direction with respect to the holder 2. With this configuration, the distance between the optical lens 4 supported by the lens holder 3 and the CCD image sensor 8 installed on the printed circuit board 1 can be adjusted, so that the focus of the optical lens 4 is adjusted. can do. Further, the distance between the optical lens 4 and the CCD image sensor 8 may be adjusted using means other than the lens holder 3 and the holder 2.

  Moreover, in the said embodiment, the resin layer provided on a micro lens, the resin layer provided on a color filter, between a glass substrate and an infrared cut filter, between an infrared cut filter and an optical lens, and Si substrate The acrylic resin is used as the resin layer for bonding between the lower surface of the glass substrate and the glass substrate, but the present invention is not limited to this, and other resin materials other than the acrylic resin may be used. For example, an epoxy resin or the like may be used. Further, different materials may be used for each resin layer.

  In the above embodiment, SiN having a refractive index of about 2.0 is used as the inorganic insulator for forming the microlens. However, the present invention is not limited to this, and in order to form the microlens, Other inorganic insulators may be used. In this case, the inorganic insulator preferably has a refractive index of 1.6 or more. For example, titanium oxide (refractive index: about 2.76), lead titanate (refractive index: about 2.7), potassium titanate (refractive index: about 2.68), titanium oxide anatase (refractive index: about 2.68). 52), zircon oxide (refractive index: about 2.4), zinc sulfide (refractive index: about 2.37 to about 2.43), antimony oxide (refractive index: about 2.09 to about 2.29), oxidation Examples include zinc (refractive index: about 2.01 to about 2.03) and lead white (refractive index: about 1.94 to about 2.09).

  In the second embodiment, the SiN film 38 made of the same material as the SiN film 37 is formed between the resin layer 39 and the SiN film 37. However, the present invention is not limited to this, and the resin layer 39 is not limited thereto. A film having a refractive index larger than that of the lower SiN film 37 and smaller than that of the lower SiN film 37 may be formed. For example, when the resin layer 39 has a refractive index of about 1.5 and the lower SiN film 37 has a refractive index of about 2.05, between the resin layer 39 and the lower SiN film 37, It is conceivable to form a SiON film having a refractive index of about 1.8 to about 1.9. In this case, the refractive index difference between the resin layer 39 and the SiN film 37 can be reduced by the SiON film. As a result, it is possible to suppress an increase in the amount of reflection of light incident on the SiN film 37 from the resin layer 39 due to a large difference in refractive index, so that the sensitivity of the solid-state imaging device is reduced. Can be suppressed.

  In the second embodiment, the SiN film 37 having a curvature radius of about 2.82 μm is formed. However, the present invention is not limited to this, and a film having another curvature radius is formed. Also good. In this case, if the radius of curvature of the film is reduced, more light can be collected in the light receiving unit, so that the sensitivity of the solid-state imaging device can be improved.

  Moreover, in the said 3rd Embodiment, although the columnar part 46 was made into the rectangular shape which has the same width | variety by the upper part and the lower part, this invention is not limited to this, The width | variety of the upper part of a columnar part is smaller than the width | variety of a lower part. You may make it a shape. That is, as in the modification shown in FIG. 15, the columnar portion 46 may have a tapered shape in which the upper width is smaller than the lower width. In this case, since the interval between the SiN films 47 as the adjacent microlenses can be reduced, the length of the convex surface below the SiN film 47 can be increased accordingly. Therefore, since more light can be condensed on the light receiving unit, the sensitivity of the solid-state imaging device can be improved.

1 is a side view showing an overall structure of a solid-state imaging device according to a first embodiment of the present invention. It is sectional drawing of the CCD image sensor used for the solid-state imaging device by 1st Embodiment shown in FIG. It is a bottom view of the CCD image sensor used for the solid-state imaging device according to the first embodiment shown in FIG. It is a top view of the CCD image sensor used for the solid-state imaging device according to the first embodiment shown in FIG. It is sectional drawing of the CCD part of the CCD image sensor used for the solid-state imaging device by 1st Embodiment shown in FIG. It is sectional drawing for demonstrating the structure of the micro lens of the CCD image sensor used for the solid-state imaging device by 1st Embodiment shown in FIG. FIG. 2 is a cross-sectional view for explaining light refraction in the vicinity of a color filter in the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. 1. 2 is a cross-sectional view for explaining a relationship between an angle α of light incident on a color filter and color mixing in the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. 2 is a cross-sectional view for explaining a relationship between an angle α of light incident on a color filter and color mixing in the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. In the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. 1, the incident angle α of light to the color filter, the height h from the upper surface of the color filter to the deepest part at the boundary of the microlens, It is sectional drawing for demonstrating the relationship with the width W between the boundaries of a micro lens. In the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. 1, the incident angle α of light to the color filter, the height h from the upper surface of the color filter to the deepest part at the boundary of the microlens, It is sectional drawing for demonstrating the relationship with the width W between the boundaries of a micro lens. In the CCD image sensor used in the solid-state imaging device according to the first embodiment shown in FIG. 1, the incident angle α of light to the color filter, the height h from the upper surface of the color filter to the deepest part at the boundary of the microlens, It is sectional drawing for demonstrating the relationship with the width W between the boundaries of a micro lens. It is sectional drawing of the CCD part of the CCD image sensor used for the solid-state imaging device by 2nd Embodiment of this invention. It is sectional drawing of the CCD part of the CCD image sensor used for the solid-state imaging device by 3rd Embodiment of this invention. It is sectional drawing of the CCD part of the CCD image sensor used for the solid-state imaging device by the modification of 3rd Embodiment of this invention. It is sectional drawing which showed the structure of the solid-state imaging device by an example of the past. It is sectional drawing which showed the structure of the solid-state imaging device by an example of the past.

Explanation of symbols

12a, 39, 48 Resin layer (first resin layer)
12b Resin layer (second resin layer)
13 Glass substrate 20, 32, 40 Si substrate (substrate)
22, 33, 41 Light-receiving part 26 Micro lens 27 Color filter

Claims (9)

A light receiving portion formed on the substrate;
A lens for condensing light on the light receiving unit;
A first resin layer provided on the lens;
A color filter provided on the first resin layer and having any one of a plurality of colors;
A second resin layer provided on the color filter;
A solid-state imaging device including a unit including a glass substrate provided on the second resin layer. The solid-state imaging device according to claim 1, wherein a plurality of the units are arranged, and the colors of the color filters of the adjacent units are different from each other. The solid-state imaging device according to claim 1, wherein the lens has a refractive index larger than a refractive index of the first resin layer. 4. The solid according to claim 1, wherein the lens is connected so as not to include a substantially flat region at a boundary portion between adjacent lenses, and the boundary portion has a predetermined thickness. Imaging device. The solid-state imaging device according to claim 1, wherein the lens is formed of an inorganic insulator and has a refractive index of 1.6 or more. The solid-state imaging device according to claim 1, wherein the lens is formed of a single layer. 4. The solid according to claim 1, wherein the lens is connected so as not to include a substantially flat region at a boundary portion between adjacent lenses, and has a radius of curvature of 2 μm or more and 7 μm or less. Imaging device. The lens is connected so as not to include a substantially flat region at a boundary between adjacent lenses;
The ratio of the distance of the said board | substrate and the top part of the said lens with respect to the distance between the boundary parts of the said adjacent lens is comprised so that it may become 0.7 or more and 1.3 or less. A solid-state imaging device according to claim 1. Of the light that is substantially imaged on the plurality of light receiving portions, the angle between the line of light that makes the maximum angle with the normal line on the upper surface of the color filter and the normal line on the upper surface of the color filter is α, 4. The solid according to claim 2, wherein when a height from the upper surface of the color filter to a deepest portion at a boundary of the lens is h and a width between the lens boundaries is W, W / 2h ≧ tan α is satisfied. Imaging device.

Images