JP2005038968A - Method and equipment for processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce impurity contamination when specified processing is performed on a substrate using a processing liquid of alkaline solution. <P>SOLUTION: When specified processing, e.g. etching, is performed using a specified processing liquid of alkaline solution, for example, onto a substrate at least the surface part of which is composed of silicon or a silicon oxide, the specified processing is performed by immersing the substrate into a processing bath filled with the processing liquid and applying a specified voltage to the substrate immersed into the processing bath. Metallic impurities are repelled when a negative voltage is applied to the substrate and when a positive voltage is applied to the substrate, metallic impurities are oxidized and the metal oxide can be removed easily by pure water, for example. Consequently, metallic impurities can be reduced extremely in the processed substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
INDUSTRIAL APPLICABILITY The present invention is used for a substrate processing method for performing predetermined processing such as etching and cleaning on a silicon wafer or silicon oxide cut from a silicon ingot, for example, with a processing solution that is an alkaline solution, and the substrate processing method. The present invention relates to a substrate processing apparatus.
[0002]
[Prior art]
Conventionally, for example, a silicon wafer sliced and cut from a silicon ingot used for manufacturing a semiconductor device, for example, a chamfering process for chamfering the periphery, a lapping process for adjusting the thickness, and an etching process for performing wet etching with an etching solution Various processes such as a polishing process for polishing the surface to make a mirror surface and a cleaning process for removing impurities adhering to the silicon wafer with a cleaning liquid are performed.
[0003]
As the etching solution or cleaning solution, it is generally known that a treatment solution that forms an alkaline solution containing, for example, sodium hydroxide, potassium hydroxide, etc. is used. For example, the alkali component and concentration are selected according to each treatment. A predetermined treatment is performed by immersing the silicon wafer in a treatment bath filled with the alkali solution.
[0004]
By the way, when a predetermined treatment such as etching or cleaning is performed on a silicon wafer using an alkaline solution, if the alkaline solution contains impurities, the impurities adhere to the surface of the silicon wafer that is the object to be processed. Conventionally, problems such as contamination of the wafer have been pointed out. Impurities are metal impurities such as nickel, copper, chromium, iron, etc. in addition to particles, but in particular, unlike particles that physically adhere to the surface of a silicon wafer, it is within the silicon molecular structure on the surface layer of the silicon wafer. Metal impurities that are chemically attached to the surface as they sink are a problem.
[0005]
As one of the techniques that can suppress adhesion to a silicon wafer even if metal impurities are contained in the alkaline solution, there is a technique of processing using an alkaline solution containing a chelating agent such as EDTA, HBED, or DTPA. Are known. In this case, the metal impurity is prevented from adhering to the silicon wafer by making the metal impurity into a metal complex compound by a chelate reaction, but the chelate reaction is not sufficiently promoted in a high concentration alkaline solution of 10% by weight or more, for example. There is. Therefore, it is necessary to select a low-concentration alkaline solution that promotes the chelate reaction. For example, it may take a long time to perform the etching process, or there is a concern that the planned etching cannot be performed. Moreover, since the organic substance which is a chelating agent is difficult to dissolve in a high-concentration alkaline solution, it may take time for the dissolving operation.
[0006]
[Problems to be solved by the invention]
By the way, since a chemical equilibrium is established between the metal impurity concentration in the treatment liquid and the metal impurities adhering to the surface of the silicon wafer immersed in the treatment liquid, the adhesion of the above metal impurities is suppressed. For this purpose, it is a good idea to keep the impurity concentration in the processing solution extremely low. However, there is a limit to the purification technique of the treatment liquid, and there are some that are attached to the silicon wafer and brought into the treatment liquid in the previous step. Therefore, when the concentration of metal impurities increases, the amount of metal impurities adhering to the silicon wafer increases, resulting in the formation of devices with different electrical characteristics, which may not be used as products.
[0007]
The present invention has been made under such circumstances, and its purpose is to perform a predetermined treatment with a treatment liquid forming an alkaline solution on a substrate having at least a surface portion made of silicon or silicon oxide. It is an object of the present invention to provide a substrate processing method and a substrate processing apparatus with less impurity contamination of the substrate.
[0008]
[Means for Solving the Problems]
The substrate processing method of the present invention is a substrate processing method for performing predetermined processing with a predetermined processing liquid on a substrate having at least a surface portion made of silicon or silicon oxide.
Immersing the substrate in a treatment bath filled with a treatment solution that is an alkaline solution;
Applying a predetermined voltage to the substrate immersed in the treatment bath.
[0009]
According to the substrate processing method of the present invention, by applying a predetermined voltage to the substrate, for example, in a substrate to which a negative voltage is applied, metal impurities are prevented from adhering due to repulsive action, and a positive voltage is applied. In the substrate to which is applied, the metal impurities attracted by the attractive force can be oxidized to form a metal oxide that can be easily removed with a rinse liquid such as pure water. For this reason, the amount of metal impurities after the treatment can be extremely reduced, and as a result, a semiconductor device having highly accurate electrical characteristics can be formed.
[0010]
When applying the predetermined voltage, a substrate to which a negative voltage is applied and an electrode to which a positive voltage is applied may be arranged so that the surfaces thereof face each other. For example, it may be a substrate. Further, the treatment liquid may be an alkaline solution containing at least one of sodium hydroxide, potassium hydroxide, and ammonium hydroxide. In this case, the alkali concentration of the treatment liquid is, for example, 45% by weight to 55% by weight. %. Further, the predetermined process may be etching, for example. Furthermore, the predetermined voltage may be a voltage at which hydrogen gas generated by an electrode reaction of the substrate does not adhere to the surface of the substrate to which a negative voltage is applied.
[0011]
Further, the treatment liquid may contain no oxidizing agent, and a positive voltage may be applied to oxidize the surface of the substrate. Furthermore, the temperature detection unit may detect the temperature of the processing liquid in the processing bath, and may adjust the voltage applied to the substrate based on the temperature detection result obtained in this step. The voltage applied to the substrate to be processed next may be adjusted based on the result of the etching rate of the subsequent substrate.
[0012]
The substrate processing apparatus of the present invention includes a processing bath filled with a processing solution which is an alkaline solution for performing a predetermined processing on a substrate having at least a surface portion made of silicon or silicon oxide, and is immersed in the processing bath. And a power supply unit for applying a predetermined voltage to the substrate. The substrate may be configured such that the substrate connected to the negative electrode side of the power supply unit and the electrode connected to the positive electrode side of the power supply unit are arranged so that their surfaces face each other. Further, the electrode may be a substrate.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
The concept of the substrate processing apparatus 1 used in the embodiment of the present invention will be described with reference to FIG. In the figure, reference numeral 10 denotes a treatment bath filled with a treatment solution that forms an alkaline solution selected according to each treatment such as etching and cleaning, and at least the surface portion of the treatment solution in the treatment bath 10 is silicon or silicon. A predetermined process is performed by immersing, for example, two substrates made of oxide, for example, a silicon wafer W. At this time, for example, the device forming surfaces which are mirror surfaces of the silicon wafers W are arranged so as to face each other so that the silicon wafers W do not come into contact with each other. For example, it is set to 10 to 20 mm. If the separation distance L is too small, the alkali concentration in the gap dilutes as the process proceeds, and the processing speed decreases. If the separation distance L is too wide, current does not easily flow between the silicon wafers W. It is preferable to set the distance L.
[0014]
In the figure, reference numeral 11 denotes a clip that is a peripheral edge of the silicon wafer W, for example, a holding body for holding the outside of the device formation region. The clip 11 is connected to a drive mechanism (not shown) and is configured to be able to move up and down while moving the silicon wafer W. The clip 11 is made of, for example, silicon, silicon oxide, or a material having a larger electric resistance.
[0015]
Furthermore, each clip 11 is held by each clip 11 and is positively connected to the DC power supply unit 12 for applying a predetermined voltage or a predetermined current to, for example, two silicon wafers W immersed in the processing liquid. A positive voltage is applied to the silicon wafer W connected to the positive electrode side of the DC power supply unit 12 of the two silicon wafers W and connected to the positive electrode side of the two silicon wafers W, for example, via wiring. Is applied, and a negative voltage is applied to the other silicon wafer W connected to the negative electrode side of the DC power supply unit 12 and regarded as a cathode.
[0016]
Further, for example, a temperature adjusting means 13 for adjusting the temperature of the processing liquid, for example, a heater is provided on the bottom surface side of the processing bath 10. Further, the treatment bath 10 is provided with a temperature detection unit 14 for detecting the temperature of the treatment liquid. Further, in the figure, reference numeral 15 denotes a control unit, and this control unit 15 has a function of controlling the operation of a DC power supply unit 12, temperature adjusting means 13, and a driving mechanism (not shown) for moving the clip 11 up and down. ing.
[0017]
The treatment liquid is not particularly limited as long as it is an alkaline solution that generates hydroxide ions (OH ⁻ ) in the liquid. For example, at least sodium hydroxide, potassium hydroxide, hydroxide A solution containing any one of the ammonium is selected. Further, if necessary, an oxidizing agent for forming a silicon oxide film on the surface of the silicon wafer W by oxidizing silicon, for example, hydrogen peroxide may be included. What kind of alkali concentration (if a plurality of alkali components is selected, the sum of the concentrations of the alkali components) is selected for each predetermined process performed on the silicon wafer W. Specifically, when the process is, for example, etching, a high concentration of 45% to 55% by weight, for example, is selected in order to perform etching actively, and the process removes impurities such as particles from the silicon wafer W. When the main purpose is cleaning for removal, for example, a low concentration of about 10% by weight is selected. The concentration of metal impurities in the treatment liquid is not particularly limited, but the concentration of each metal impurity contained in the treatment liquid is preferably, for example, 0.5 ppb or less, and the silicon wafer W is repeatedly processed. Thus, it is desirable to replace the treatment liquid when the concentration level is exceeded.
[0018]
Next, a method of performing a predetermined process such as etching or cleaning on the silicon wafer W using the substrate processing apparatus 1 described above will be described. Here, a case where etching is performed using a sodium hydroxide solution is taken as an example. I will explain. First, the two silicon wafers W that have been subjected to pretreatment such as lapping, for example, are processed bath 10 with their peripheral edges held by clips 11 respectively connected to the positive electrode side and the negative electrode side of DC power supply unit 12. So that they do not come into contact with each other in the treatment baths 10 filled with, for example, a 45 wt% to 55 wt% sodium hydroxide solution whose temperature is set to 40 ° C. to 70 ° C., for example. Soaked. Along with this immersion timing, or before or after the immersion timing, a predetermined voltage, for example, an attractive force called van der Waals force generated between a metal impurity and a silicon wafer, which is greater than a predetermined voltage, is considered to be a cathode. A voltage, for example, a voltage of 5 V to 21 V, is applied from the surface of the silicon wafer W so that hydrogen gas bubbles generated by the electrode reaction do not adhere to the surface of the silicon wafer W.
[0019]
Here, when the silicon wafer W is immersed in the processing liquid, hydroxide ions (OH ⁻ ) in the processing liquid act as an etchant, and the surface of the silicon wafer W is etched. More specifically, silicon is directly etched by hydroxide ions in the silicon wafer W that is regarded as a cathode, and in the silicon wafer W that is regarded as an anode, an oxidation reaction that is an anodic reaction (electrode reaction) causes the silicon wafer W A thin silicon oxide film is formed on the surface, and this silicon oxide film is etched by hydroxide ions. On the other hand, the treatment liquid is attached to the silicon wafer W during the previous step or during transfer, and the silicon wafer W is etched to disperse in the liquid, for example, metal impurities such as nickel, copper, chromium, iron, and the purification limit. Most of the metal impurities present from the beginning are present as metal hydroxides or metal hydroxide ions in the treatment liquid which is a strong alkaline solution. For example, in the case of nickel, HNiO ₂ ⁻ , NiO ₄ ^{2− and the} like are listed as examples. In the case of copper, HCuO ₂ ⁻ and CuO ₄ ²⁻ are listed as examples. Therefore, when a predetermined voltage is applied to the silicon wafer W and an electric field is formed around the silicon wafer W, the metal hydroxide and the metal hydroxide ion migrate in the processing liquid based on the electric field vector. . That is, in the silicon wafer W regarded as the cathode, the metal impurities are moved away from the silicon wafer W by the repulsive action, whereas in the silicon wafer W regarded as the anode, the metal impurities are attracted by the action of the attractive force. . Although the actual action of the metal impurity attracted to the silicon wafer W as an anode does not have been grasped, the present inventors presume as follows. The metal impurities attracted to and contacted the silicon wafer W to which a positive voltage is applied are oxidized by an oxidation reaction, which is an anodic reaction, to become a metal oxide, and this metal oxide diffuses into the solution or is a silicon wafer. Some adhere to the surface of W. However, since it becomes a metal oxide, it cannot penetrate into the molecular structure of silicon and, for example, physically adheres to the surface of the silicon wafer W like particles.
[0020]
Thereafter, for example, when a predetermined time elapses, application of voltage to the silicon wafer W is stopped. Next, the silicon wafer W is pulled up from the treatment bath 10 and, for example, a rinsing liquid such as pure water or ultrapure water is supplied to the silicon wafer W, and adheres to the surface of the alkaline component and particularly the positive silicon wafer W. The etched metal oxide is washed away and the etching process is completed.
[0021]
In the above-described embodiment, a predetermined voltage is applied to the silicon wafer W that is regarded as an anode and a cathode to form an electric field around the silicon wafer W, so that, for example, the silicon wafer W to which a negative voltage is applied. In this case, it is possible to suppress the adhesion of metal impurities by the action of repulsive force. Further, in the silicon wafer W to which a positive voltage is applied, metal impurities are attracted by the action of attractive force, but it is oxidized and becomes a metal oxide, so that it can be suppressed from entering into the molecular structure of silicon and being chemically attached, Therefore, it can be easily removed with a rinse solution such as pure water. That is, in the silicon wafer W that is regarded as either an anode or a cathode, the metal impurities of the processed silicon wafer W can be extremely reduced, and as a result, a semiconductor device having highly accurate electrical characteristics can be formed. it can. In this example, since the silicon wafer W, which is a semiconductor having a high electrical resistance, is used as the electrode, even if a current flows between the two silicon wafers W through the processing liquid, for example, the current is as small as 0.01 A. Since the change in the concentration of the treatment liquid due to the progress of the water electrolysis reaction, which is a reaction, is small, the influence of the application of voltage on the etching is small.
[0022]
Further, in the above-described embodiment, as described above, the surface of the silicon wafer W assumed to be the anode is first oxidized by the anode reaction to form a silicon oxide thin film, and this thin film is etched by the processing liquid. Therefore, it is possible to etch the surface mildly as compared with the case of directly etching silicon. Therefore, for example, it is not necessary to add an oxidizing agent such as hydrogen peroxide to the treatment liquid, or when an oxidizing agent is added, the amount added can be reduced, and as a result, the operating cost can be reduced. .
[0023]
Furthermore, in the above-described embodiment, since a predetermined voltage is applied to the silicon wafer W, the silicon wafer W has a positive or negative charge, so that the contact angle of hydroxide ions as an etchant ( Since the approach angle is aligned within the plane of the silicon wafer, uniform etching can be performed within the plane.
[0024]
In the above example, an example in which two silicon wafers W are processed has been described. However, in an actual site, it is a good idea to process a larger number of silicon wafers W at a time to ensure high throughput. As another example of processing a large number of silicon wafers W, there is a configuration in which a plurality of pairs of silicon wafers W corresponding to the anode and the cathode are immersed in a processing bath for processing.
[0025]
In the present invention, the present invention is not limited to the configuration in which the silicon wafer W, which is the substrate to be processed, is treated as an anode and a cathode, and either one may be an electrode made of another member. In this case, for example, a material such as nickel is selected when the electrode is used as an anode, or carbon is selected when the electrode is used as a cathode. Even if it is such a structure, the effect similar to the above-mentioned case can be acquired. Further, in this case, since one electrode constituted by another member can be permanently installed in the processing bath, it is advantageous in that the apparatus configuration and the loading / unloading of the silicon wafer W can be simplified.
[0026]
Further, in the present invention, both the anode and the cathode may be electrodes made of the other members described above, a predetermined voltage may be applied to the electrodes, and the silicon wafer W may be immersed in the treatment bath 10 to perform the treatment. Good. Even in such a configuration, a predetermined voltage is applied to the electrode to form an electric field. For example, the silicon wafer W is arranged based on the electric field vector, such as the silicon wafer W being immersed in the vicinity of the cathode. As a result, the metal impurities can be prevented from being separated and adhered.
[0027]
Furthermore, in the present invention, the substrate to be processed is not limited to the silicon wafer W, and can be applied to a substrate made of at least silicon oxide, for example. Specifically, for example, application to a glass substrate which is a mask substrate is given as an example.
[0028]
Further, in the present invention, the supply to the silicon wafer W is not limited to a direct current, and may be an alternating current, for example. Even if it is such a structure, the effect similar to the above-mentioned case can be acquired. Furthermore, in the present invention, a high voltage may be applied to the silicon wafer W, and the processing liquid in the processing bath may be heated by the Joule heat. In this case, based on the detection result of the temperature detection unit 14. The voltage to be applied may be adjusted. Furthermore, in the present invention, the current flowing between the anode and the cathode during processing does not have to be constant. For example, a current exceeding the bath voltage temporarily, for example, a current of 10 A flows so that the etching rate is chemically increased. You may make it control.
[0029]
Furthermore, in the present invention, as described above, the metal impurities in the treatment liquid are attracted to the anode and oxidized to form metal oxides. For example, before immersing the silicon wafer W in the treatment liquid, A pretreatment may be performed in which the metal impurities in the treatment liquid are oxidized in advance using the electrode made of the above member to form a metal oxide, for example, the amount of ionic metal impurities is reduced. In this case, the amount of metal impurities in the treatment liquid can be reduced by taking out the anode to which the metal oxide is attached from the treatment liquid.
[0030]
【Example】
Next, examples performed to confirm the effects of the present invention will be described.
(Example 1)
This example is an example in which a 2-inch silicon wafer W was etched using the substrate cleaning apparatus described above. Detailed processing conditions are listed below. The silicon wafer W after the treatment was rinsed with pure water and dried, and then the number of nickel atoms on the surface was measured with a total reflection X-ray fluorescence spectrometer, and the number per unit area was obtained by calculation. The measurement limit of this analyzer is 0.7 × 10 ¹⁰ atoms / cm ² .
・ Voltage: 21V
・ Processing time: 60 min
・ Separation distance L: 15 mm
Treatment liquid: 47% by weight aqueous sodium hydroxide solution (nickel concentration 0.5 ppb)
・ Processing temperature: 40-70 ° C
[0031]
(Comparative Example 1)
This example is a comparative example in which the same processing as in Example 1 was performed except that no voltage was applied.
[0032]
(Results and discussion of Example 1 and Comparative Example 1)
In Example 1, the number of nickel atoms per unit area of the negative-side silicon wafer W is less than 0.7 × 10 ¹⁰ atoms / cm ² (below the measurement limit of the analyzer), and the positive-side silicon wafer W The number of nickel atoms per unit area was less than 0.7 × 10 ¹⁰ atoms / cm ² , and the amount of nickel deposited was very small. On the other hand, in Comparative Example 1 in which no voltage is applied, the number of nickel atoms per unit area of the silicon wafer W was ^{9.1 × 10 10 atoms / cm 2} . As can be seen from the above results, it was confirmed that by applying a positive or negative voltage to the silicon wafer W, the adhesion amount of metal impurities can be extremely reduced.
[0033]
(Example 2)
This example is an example in which the same treatment as that in Example 1 was performed except that a treatment liquid having a nickel concentration adjusted to 100 ppb was used.
[0034]
(Comparative Example 2)
This example is a comparative example in which the same processing as in Example 2 was performed except that no voltage was applied.
[0035]
(Example 3)
This example is an example in which the same treatment as in Example 2 was performed except that a 10% by weight sodium hydroxide solution was used.
[0036]
(Comparative Example 3)
This example is a comparative example in which the same processing as in Example 3 was performed except that no voltage was applied.
[0037]
(Results and discussion of Examples 2 and 3 and Comparative Examples 2 and 3)
In Example 2, the number of nickel atoms per unit area of the silicon wafer W on the negative electrode side is 162.8 × 10 ¹⁰ atoms / cm ² , and the number of nickel atoms per unit area of the silicon wafer W on the positive electrode side is Was 230.2 × 10 ¹⁰ atoms / cm ² . In Comparative Example 2 where no voltage was applied, the number of nickel atoms per unit area of the silicon wafer W was 624.1 × 10 ¹⁰ atoms / cm ² .
In Example 3, the number of nickel atoms per unit area of the silicon wafer W on the negative electrode side is 36.8 × 10 ¹⁰ atoms / cm ² , and the number of nickel atoms per unit area of the silicon wafer W on the positive electrode side is Was 173.6 × 10 ¹⁰ atoms / cm ² . In Comparative Example 3 where no voltage was applied, the number of nickel atoms per unit area of the silicon wafer W was 152.9 × 10 ¹⁰ atoms / cm ² .
As can be seen from the above results, it was confirmed that the amount of adhesion of metal impurities can be reduced by applying a predetermined voltage to the silicon wafer W even when nickel as a metal impurity has a high concentration. Furthermore, it has been confirmed that the amount of metal impurities deposited can be reduced even if various concentrations of alkaline solutions are selected according to the type of treatment such as etching or cleaning.
[0038]
【The invention's effect】
As described above, according to the present invention, for example, when a predetermined voltage is applied to a substrate that is regarded as an anode and a cathode, an electric field is formed around the substrate. For example, in a substrate to which a negative voltage is applied, a repulsive action is applied. The adhesion of metal impurities is suppressed, and in a substrate to which a positive voltage is applied, the metal impurities attracted by attractive force are oxidized to form a metal oxide, which can be easily removed with pure water. As a result, the metal impurities of the substrate after processing can be extremely reduced.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing a concept of a substrate processing apparatus according to an embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Treatment bath 11 Clip 12 DC power supply part 13 Temperature control means 14 Temperature detection part 15 Control part

Claims (13)

In a substrate processing method of performing a predetermined process with a predetermined processing liquid on a substrate having at least a surface portion made of silicon or silicon oxide,
Immersing the substrate in a treatment bath filled with a treatment solution that is an alkaline solution;
Applying a predetermined voltage to the substrate immersed in the treatment bath. 2. The substrate processing method according to claim 1, wherein a substrate to which a negative voltage is applied and an electrode to which a positive voltage is applied are arranged so that the surfaces thereof face each other. The substrate processing method according to claim 2, wherein the electrode is the substrate. 4. The substrate processing method according to claim 1, wherein the processing solution is an alkaline solution containing at least one of sodium hydroxide, potassium hydroxide, and ammonium hydroxide. The substrate processing method according to claim 4, wherein the alkali concentration of the treatment liquid is 45 wt% to 55 wt%. 6. The substrate processing method according to claim 5, wherein the predetermined processing is etching. 7. The substrate according to claim 1, wherein the predetermined voltage is a voltage at which hydrogen gas generated by an electrode reaction of the substrate does not adhere to the surface of the substrate to which a negative voltage is applied. Processing method. The substrate processing method according to claim 3, wherein the processing liquid does not contain an oxidant, and a positive voltage is applied to oxidize the surface of the substrate. A step in which the temperature detector detects the temperature of the treatment liquid in the treatment bath;
The substrate processing method according to claim 1, further comprising: adjusting a voltage applied to the substrate based on a temperature detection result obtained in this step. 9. The substrate processing method according to claim 1, wherein a voltage applied to a substrate to be processed next is adjusted based on a result of an etching rate of the substrate after processing. A treatment bath filled with a treatment liquid which is an alkaline solution for performing a predetermined treatment on a substrate having at least a surface portion made of silicon or silicon oxide;
And a power supply unit that applies a predetermined voltage to the substrate immersed in the treatment bath. The substrate processing apparatus according to claim 11, wherein the substrate connected to the negative electrode side of the power supply unit and the electrode connected to the positive electrode side of the power supply unit are arranged so that their surfaces face each other. The substrate processing apparatus according to claim 12, wherein the electrode is the substrate.

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