JP2005026447A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve reliability of semiconductor device by preventing an internal defect of sealing resin to form a semiconductor device. <P>SOLUTION: The semiconductor device comprises a substrate, a semiconductor element provided at least any one side of the substrate, a first sealing resin formed of a first hardening resin for sealing between the substrate and semiconductor element and a first resin substance including a first hardening agent, and a second sealing resin formed of a second resin substance including a second hardening resin surrounding at least the entire circumference of the side portion of the semiconductor element and a second hardening agent. In this semiconductor device after the first hardening resin is sealed, at least entire circumference of side of the semiconductor element is surrounded with the second searing region. The first and second hardening agents are the hardening agent of the same kind. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【００２２】
前記の室温で液状のエポキシ樹脂としては、例えばビスフェノール系ジグリシジルエーテル類、フェノールノボラックとエピクロールヒドリンとの反応で得られる常温で液状のグリシジルエーテル、常温で液状のシリコーン変性エポキシ樹脂およびそれらの混合物等が挙げられる。
さらに、これらの液状樹脂にジヒドロキシナフタレンのジグリシジルエーテル、テトラメチルビフェノールのジグリシジルエーテル等の常温で液状となりうるが純度が高いと結晶化するような結晶性エポキシ樹脂を混合し、液状にしたものを使用することもできる。
また、前記の常温で液状のエポキシ樹脂に、常温で固形のエポキシ樹脂を混合し、液状にしたものも使用することもできる。
前記固形のエポキシ樹脂の含有量は、特に限定されないが、前記エポキシ樹脂全体の５０重量％以下が好ましく、特に２０重量％以下が好ましい。含有量が前記範囲内であると、第１の封止樹脂４の硬化物の特性を制御するのが容易となる。
【００２３】
また、前記第２の硬化性樹脂と第１の硬化性樹脂とは、特に限定されないが、同種の硬化性樹脂であることが好ましい。これにより、第２の封止樹脂５と第１の封止樹脂４との界面の接着性を特に向上することができる。
同種の硬化性樹脂とは、例えばエポキシ樹脂同士、フェノール樹脂同士等が挙げられる。これらの中でもエポキシ樹脂同士が好ましい。これにより、耐熱性および電気特性の両方に優れる。
【００２４】
前記第１の硬化性樹脂の含有量は、特に限定されないが、前記第１の樹脂組成物全体の４〜７０重量％が好ましく、特に１０〜５０重量％が好ましい。含有量が前記下限値未満であると作業性および流動性が低下する場合があり、前記上限値を超えると耐ヒートサイクル性（耐クラック性および半田の変形防止）が低下する場合がある。
【００２５】
前記第１の硬化剤は、前記第２の硬化剤と同種のものを用いる。同種の硬化剤とは、例えばアミン系の硬化剤同士、フェノール系硬化剤同士、酸無水物硬化剤同士等が挙げられる。これらの中でもフェノール系硬化剤同士が好ましい。これにより、吸水率を低くすることができ、それによって耐クラック性を向上することができる。すなわち、第２の封止樹脂５の硬化剤としては、フェノール系硬化剤が吸水率を低下できる点で好適に用いられており、第１の封止樹脂４の硬化剤にもフェノール系硬化剤を用いることで、半導体装置全体としての吸水率をさらに向上することができ、それによって耐クラック性もさらに向上することができる。
また、第２の硬化剤としてのフェノール系硬化剤は、他の硬化剤と比較して第２の封止樹脂５の反応を制御することが容易となるため、半導体装置を製造する際の良好な流動性を確保した状態で、第１の封止樹脂４と第２の封止樹脂５との界面の接着性を向上することもできる。
さらに第２の硬化剤としてのフェノール系硬化剤は、その反応性制御が容易なことより無機充填材の高充填化も可能となる。そのため、半導体装置の優れた信頼性を確保した状態で、第１の封止樹脂４と第２の封止樹脂５との界面の接着性を向上することもできる。
【００２６】
前記第１の硬化剤としては、例えばジエチレントリアミン（ＤＥＴＡ）、トリエチレンテトラミン（ＴＥＴＡ）、メタキシレリレンジアミン（ＭＸＤＡ）などの脂肪族ポリアミン、ジアミノジフェニルメタン（ＤＤＭ）、ｍ−フェニレンジアミン（ＭＰＤＡ）、ジアミノジフェニルスルホン（ＤＤＳ）などの芳香族ポリアミンのほか、ジシアンジアミド（ＤＩＣＹ）、有機酸ジヒドララジドなどを含むポリアミン化合物等のアミン系硬化剤、フェノールノボラック樹脂、クレゾールノボラック樹脂等のノボラック型フェノール樹脂、トリフェノールメタン型フェノール樹脂、テルペン変性フェノール樹脂、ジシクロペンタジエン変性フェノール樹脂等の変性フェノール樹脂、フェニレンおよび／またはビフェニレン骨格を有するフェノールアラルキル樹脂、フェニレンおよび／またはビフェニレン骨格を有するナフトールアラルキル樹脂等のアラルキル型フェノール樹脂、ビスフェノール化合物、下記化２で示される化合物等のフェノール系硬化剤（１分子内にフェノール性水酸基を２個以上有するモノマー、オリゴマー、ポリマー全般）、ヘキサヒドロ無水フタル酸（ＨＨＰＡ）、メチルテトラヒドロ無水フタル酸（ＭＴＨＰＡ）などの脂環族酸無水物（液状酸無水物）、無水トリメリット酸（ＴＭＡ）、無水ピロメリット酸（ＰＭＤＡ）、ベンゾフェノンテトラカルボン酸（ＢＴＤＡ）等の芳香族酸無水物等の酸無水物系硬化剤、ポリアミド樹脂、ポリスルフィド樹脂が挙げられる。
【化２】

これらの中でも室温で液状である硬化剤（特に室温で液状であるフェノール系硬化剤）が好ましく、最も化２で示される化合物が好ましい。これにより、第１の封止樹脂４の流動性を特に向上することができる。
【００２７】
前記第１の硬化剤の含有量は、特に限定されないが、前記第１の樹脂組成物全体の１〜５０重量％が好ましく、特に３〜４０重量％が好ましい。含有量が前記範囲内であると、特に第１の樹脂組成物が効率良く硬化する。
また、前記第１の硬化性樹脂がエポキシ樹脂であり、前記第１の硬化剤がフェノール系硬化剤である場合、前記エポキシ樹脂のエポキシ基と前記フェノール系硬化剤のフェノール性水酸基との当量比（エポキシ基／フェノール性水酸基）は、特に限定されないが、０．３〜３．０が好ましく、特に０．８〜２．５が好ましい。当量比が前記範囲内であると、特に硬化性および耐湿信頼性（吸湿処理後の界面における接着性）に優れる。
【００２８】
前記第１の樹脂組成物は、特に限定されないが、無機充填材を含有することが好ましい。これにより、耐湿性および耐ヒートサイクル性（耐クラック性および半田の変形防止）を向上することができる。
前記無機充填材としては、例えばタルク、焼成クレー、未焼成クレー、マイカ、ガラス等のケイ酸塩、酸化チタン、アルミナ、シリカ、溶融シリカ等の酸化物、炭酸カルシウム、炭酸マグネシウム、ハイドロタルサイト等の炭酸塩、水酸化アルミニウム、水酸化マグネシウム、水酸化カルシウム等の水酸化物、硫酸バリウム、硫酸カルシウム、亜硫酸カルシウム等の硫酸塩または亜硫酸塩、ホウ酸亜鉛、メタホウ酸バリウム、ホウ酸アルミニウム、ホウ酸カルシウム、ホウ酸ナトリウム等のホウ酸塩、窒化アルミニウム、窒化ホウ素、窒化ケイ素等の窒化物等を挙げることができる。これらの中でもシリカ（特に球状溶融シリカ）が好ましい。これにより、流動性および供給安定性を向上することができる。
【００２９】
前記無機充填材（特に、球状シリカ）の平均粒子径は、特に限定されないが、１０μｍ以下が好ましく、特に５μｍ以下が好ましい。平均粒子径が前記範囲内であると、第１の封止樹脂４の充填性を特に向上することができる。
前記第１の封止樹脂４は、毛細管現象等を利用して半導体装置の半導体素子基板等との間隙を充填するものであり、その間隙は１５０μｍ以下であることが多い。そのため、その間隙で第１の封止樹脂４の流動性を確保するためには、第１の樹脂組成物に用いる無機充填材は、前記範囲内であることが好ましい。
【００３０】
第１の樹脂組成物に含まれる前記無機充填材の含有量は、特に限定されないが、前記第１の樹脂組成物全体の３０〜９０重量％が好ましく、特に４０〜７５重量％が好ましい。含有量が前記下限値未満であると耐ヒートサイクル性（耐クラック性および半田の変形防止）が低下する場合があり、前記上限値を超えると作業性および流動性が低下する場合がある。
【００３１】
前記第１の硬化性樹脂、第１の硬化剤および無機充填材の合計の含有量は、特に限定されないが、前記第１の樹脂組成物全体の９５重量％以上が好ましく、特に９７〜９９重量％が好ましい。含有量が前記範囲内であると、特に第１の封止樹脂４と第２の封止樹脂５との界面の接着性に優れる。その理由は、第１の封止樹脂４の表面に第２の封止樹脂５の密着性を低下させる成分が滲出することを防止できるからである。
【００３２】
前記第１の樹脂組成物には、本発明の目的を損なわない範囲で硬化促進剤、カップリング剤、低応力剤、顔料、染料、レベリング剤、消泡剤等の添加剤を混合することができる。
【００３３】
本発明に用いられる半導体装置は、基板２の上に間隙を介して半導体素子３が対向配置され、この半導体素子３と基板２との間隙を第１の封止樹脂４で封止した後に、第２の封止樹脂５により更に周囲を封止して得られるものである。
本発明の半導体装置は、図１に示す以外の構成を有する半導体装置にも適用可能である。他の構成を有する半導体装置としては、例えば図２〜図４に示すようなものがある。図２〜図４は、他の構成を有する半導体装置１の模式図である。以下、図１に示す半導体装置との相違点を中心に説明する。
【００３４】
図２に示される半導体装置１は、半導体素子３の上面が第２の封止樹脂５に覆われずに、開放されているものである（すなわち半導体素子３の側部全周が第２の封止樹脂５で包囲されている）。
【００３５】
図３に示される半導体装置１は、半導体素子３の上面に、接着剤や接着フィルム等（図示せず）を介して、他の半導体素子３ａを搭載し、他の半導体素子３ａからワイヤー６によりワイヤーボンディングを行い、基板２に接続したものを第２の封止樹脂５で封止するものである。
【００３６】
図４に示される半導体装置１は、基板２の半導体素子３を搭載している側と反対側にも第２の封止樹脂５が形成されているものである。
なお、図２〜４についても第１の封止樹脂４、第２の封止樹脂５の樹脂組成は前述の図１に示す半導体装置１と同様である。
【００３７】
上述のような半導体装置の構成の中でも例えば図１〜３に示すような、基板２の片面のみを第２の封止樹脂５で封止するものに、本発明を好適に用いることができる。すなわち、第２の封止樹脂５が基板２の両面を封止する場合と比較して、片面封止の場合、半導体装置の温度変化に対する反り量の変化が大きくなる。そのため第１の封止樹脂４と第２の封止樹脂５との積層界面にかかる応力が大きく、より強い接着力が必要とされるからである。
【００３８】
次に、半導体装置の製造方法について説明する。
図５は、本発明の半導体装置の製造方法の一例を示す概略図である。
本発明の半導体装置の製造方法には、図５ａに示すように予め基板２の一方側に設けられた半導体素子３を有するものを使用することができる。
【００３９】
まず、基板２と、基板２の一方側に設けられる半導体素子３との間隙８に、未硬化の第１の封止樹脂４を充填する。
第１の封止樹脂４を充填する方法としては、半導体装置を熱板上に置き、第１の封止樹脂４が入ったシリンジのような注入器を用いて、第１の封止樹脂４を半導体素子３の近傍に抽入して、毛細管現象により間隙８内に展開・充填する方法等が挙げられる。
第１の封止樹脂４を得るには、前記第１の樹脂組成物を例えばロール、遊星ミキサー等で混合し、好ましくは真空脱泡する。
前記第１の樹脂組成物（充填液）の粘度は、特に限定されないが、０．５〜２００（Ｐａ・ｓ）が好ましく、特に１〜１００（Ｐａ・ｓ）が好ましい。粘度が前記下限値未満であると樹脂が充填装置の吐出口より液垂れする場合があり、前記上限値を超えると流動性が低下する場合がある。
前記粘度は、例えば常温（２５℃）でブルックフィールド型粘度計、Ｅ型粘度計等を用いて、測定条件０．５〜５ｒｐｍで評価することができる。
【００４０】
図５ｂに示すように未硬化の第１の封止樹脂４の充填がなされたら、未硬化の第１の封止樹脂４を硬化する。
未硬化の第１の封止樹脂４を硬化する方法としては、加熱する方法、光照射する方法などが挙げられる。
加熱する方法の加熱条件は、特に限定されないが、１４０〜１８０℃×１０〜１８０分が好ましく、特に１５０〜１６５℃×３０〜１２０分が好ましい。加熱条件が前記下限値未満であると硬化が不十分となる場合があり、前記上限値を超えると生産性を向上する効果が低下する場合がある。
【００４１】
次に、半導体素子３と、硬化した第１の封止樹脂４を共に包囲するように未硬化の第２の封止樹脂５を供給する。
第２の封止樹脂５を供給する方法としては、例えばトランスファーモールド、コンプレッションモールド、インジェクションモールド等の成形方法が挙げられる。
第２の封止樹脂５を供給する際に、前記第２の封止樹脂組成物を例えばミキサー等を用いて原料を充分に均一に混合した後、更に熱ロール、ニーダー、押出機等の混練機で溶融混練し、冷却後粉砕して得られる。
第２の封止樹脂５を供給する際の粘度は、特に限定されないが、３０〜３００（ｐｏｉｓｅ）が好ましく、特に５０〜２００（ｐｏｉｓｅ）が好ましい。粘度が前記下限値未満であると流動性が低下し第１の封止樹脂４との密着性が低下する場合があり、前記上限値を超えるとボイドの発生が多くなる場合がある。
前記粘度は、例えば高化式フローテスター等で求めることができる。
【００４２】
そして、図５ｃのように未硬化の第２の封止樹脂５の供給がなされたら、未硬化の第２の封止樹脂５を硬化する。第２の封止樹脂５を硬化する方法としては、加熱する方法、光照射する方法などが挙げられる。
加熱する方法の加熱条件は、特に限定されないが、１６０〜１８５℃×３０〜１８０（秒）が好ましく、特に１７０〜１８５℃×５０〜１２０（秒）が好ましい。加熱条件が前記下限値未満であるとランナー取られ等の離型不良が生じる場合があり、前記上限値を超えると成形のサイクルタイムが延び生産性が低下する場合がある。
【００４３】
なお、本発明の半導体装置の製造方法では、未硬化の第１の封止樹脂４を充填後に、半硬化状態またはそれ以上の硬化状態とし、未硬化の第２の封止樹脂５を供給し、完全な硬化に至っていない状態の第１の封止樹脂４と第２の封止樹脂５とを硬化してもよい。これにより、第１の封止樹脂４と第２の封止樹脂５との界面での接着性をより向上することができる。
第１の封止樹脂４の半硬化状態とは、第２の封止樹脂５を供給する際に半導体素子３が固定されている状態であれば良く、厳密に半硬化の状態である必要は無い。
具体的には、第１の封止樹脂４の反応率が５０〜９０％であることが好ましく、特に５０〜８５％が好ましい。反応率が前記下限値未満であると樹脂がゲル化しておらず、第２の封止樹脂５を充填する際に第１の封止樹脂４が流れてしまう場合があり、前記上限値を超えると接着性を向上する効果が低下する場合がある。
前記反応率は、例えば示差走査熱量計（ＤＳＣ）を用いて評価することができる。
さらには、半硬化状態と完全硬化状態との間の任意の硬化状態とすることもできる。すなわち反応率５０〜１００％の間の任意の値でも良い。
【００４４】
以上のような製造方法により、本発明の半導体装置が得られる。なお、上述の製造方法においては、第２の封止樹脂５が基板２の片面側から半導体素子３の周囲を完全に封止する場合について説明したが、本発明はこれに限定されない。すなわち、例えば半導体素子３の少なくとも側部全周を包囲する場合、基板２の両面に第２の封止樹脂５が封止される場合等である。
【００４５】
【実施例】
以下、本発明の実施例および比較例に基づいて詳細に説明するが、本発明はこれに限定されるものではない。
（実施例１）
▲１▼第１の封止樹脂の調製
第１の硬化性樹脂としてビスフェノールＦ型エポキシ樹脂（日本化薬製、ＲＥ−４０３Ｓ、エポキシ当量１６６）２３．４重量％と、第１の硬化剤として液状ポリフェノール（明和化成製、ＭＥＨ−８０００Ｈ、水酸基当量１４１）１９．８重量％と、無機充填材として球状シリカ（アドマテックス製、ＳＯ−２５Ｈ、平均粒子径０．５μｍ）５５重量％と、カップリング剤としてγ−グリシドキシプロピルトリメトキシシラン（信越化学製、ＫＢＭ−４０３）１．２重量％と、顔料としてカーボンブラック（三菱化学製、ＭＡ−６００）０．１重量％と、硬化促進剤として２−フェニル−４メチルイミダゾール０．５重量％とを３本ロールにて室温で混練した後、真空脱泡機を用いて真空脱泡処理をして第１の封止樹脂を構成する第１の樹脂組成物を得た。
【００４６】
▲２▼第２の封止樹脂の調製
第２の硬化性樹脂としてビフェニル型エポキシ樹脂（ＹＸ４０００Ｈ、ジャパンエポキシレジン製、融点１０８℃、エポキシ当量１８５）８．４３重量％と、第２の硬化剤としてフェノールノボラック樹脂（ＰＲ−ＨＦ−３、住友ベークライト製、軟化点８０℃、水酸基当量１０５）４．２２重量％と、トリフェニルホスフィン（ＴＰＰ、北興化学製）０．１５重量％と、無機充填材として球状溶融シリカ（ＦＢ６０、電気化学製、平均粒径２４μｍ）８６．８重量％と、カーボンブラック（ＭＡ６００、三菱化学製）０．２重量％と、カルナバワックス（東亜化成製）０．２重量％とをミキサーで２５℃、２０分間混合した後、２本ロールを用いて９５℃、５分間混練し、冷却後粉砕して第２の封止樹脂を構成する第２の樹脂組成物を得た。
【００４７】
▲３▼第１の封止樹脂の充填（封止）
基板に予め半導体素子が形成されている半導体パッケージを用いた。用いた半導体素子と基板は、以下の通りである。半導体素子はサイズが１０ｍｍ×１０ｍｍ×０．３５ｍｍｔを用い、基板は３５２ｐＢＧＡ（サイズ３５ｍｍ×３５ｍｍ×０．５６ｍｍｔのビスマレイミド・トリアジン樹脂／ガラスクロス基板であり、ゲート、ランナー部は金メッキが施されている）を用いた。半導体素子と基板とは、１７６個の半田バンプによりペリフェラルに接合されているものを用いた。半田バンプの高さは、０．０５ｍｍであった。また、半導体素子の保護膜には窒化ケイ素を用い、基板上のソルダーレジストには太陽インキ製のＰＳＲ４０００を用いた。
上述の半導体パッケージを１１０℃の熱板上で加熱し、半導体素子の一辺に第１の封止樹脂をディスペンスし充填させ、１５０℃のオーブンで９０分間第１の封止樹脂を硬化した。
【００４８】
▲４▼第２の封止樹脂の充填（封止）
その後トランスファー成形機を用い、金型温度１７５℃、注入圧力７．８ＭＰａ、硬化時間２分で第２の封止樹脂を封止して成形した。得られた成形品のランナー、ゲート部の第２の封止樹脂と金メッキ部分とを人手により分離した。そして１７５℃、２時間で後硬化して半導体装置を得た。使用したサンプルは１０個であった。
【００４９】
（実施例２）
第１の硬化剤を変えて、第１の封止樹脂の配合を以下のようにした以外は、実施例１と同様にした。
第１の硬化性樹脂としてビスフェノールＦ型エポキシ樹脂（日本化薬製、ＲＥ−４０３Ｓ、エポキシ当量１６６）２４．２重量％と、第１の硬化剤として液状ポリフェノール（明和化成製、ＭＥＨ−８０００Ｈ、水酸基当量１４１）１４．３重量％およびノボラック型フェノール樹脂（住友ベークライト製、ＰＲ−ＨＦ−３）４．７重量％と、無機充填材として球状シリカ（アドマテックス製、ＳＯ−２５Ｈ、平均粒子径０．５μｍ）５５重量％と、カップリング剤としてγ−グリシドキシプロピルトリメトキシシラン（信越化学製、ＫＢＭ−４０３）１．２重量％と、顔料としてカーボンブラック（三菱化学製、ＭＡ−６００）０．１重量％と、硬化促進剤として２−フェニル−４メチルイミダゾール０．５重量％とを用いた。
【００５０】
（実施例３）
第１の硬化剤および第２の硬化剤として、アミン系硬化剤を用い、配合を以下のようにした以外は実施例１と同様にした。
第１の硬化性樹脂としてビスフェノールＦ型エポキシ樹脂（日本化薬製、ＲＥ−４０３Ｓ、エポキシ当量１６６）３１．５重量％と、第１の硬化剤としてジエチルジアミノジフェニルメタン（日本化薬製、カヤハードＡＡ、当量６３）１１．９重量％と、無機充填材として球状シリカ（アドマテックス製、ＳＯ−２５Ｈ、平均粒子径０．５μｍ）５５重量％と、カップリング剤としてγ−グリシドキシプロピルトリメトキシシラン（信越化学製、ＫＢＭ−４０３）１．５重量％と、顔料としてカーボンブラック（三菱化学製、ＭＡ−６００）０．１重量％と、硬化促進剤として２−フェニル−４メチルイミダゾール０．５重量％とを用いた。
第２の硬化性樹脂としてビフェニル型エポキシ樹脂（ＹＸ４０００Ｈ、ジャパンエポキシレジン製、融点１０８℃、エポキシ当量１８５）２２．１重量％と、第２の硬化剤としてジエチルジアミノジフェニルメタン（カヤハードＡＡ、日本化薬製、当量６３）７．４重量％と、トリフェニルホスフィン（ＴＰＰ、北興化学製）０．１５重量％と、球状溶融シリカ（ＦＢ６０、電気化学製、平均粒径２４μｍ）６９．５重量％と、カーボンブラック（ＭＡ６００、三菱化学製）０．２重量％と、カルナバワックス（東亜化成製）０．２重量％とを用いた。
【００５１】
（実施例４）
第１の硬化剤および第２の硬化剤として、酸無水物系硬化剤を用い、配合を以下のようにした以外は実施例１と同様にした。
第１の硬化性樹脂としてビスフェノールＦ型エポキシ樹脂（日本化薬製、ＲＥ−４０３Ｓ、エポキシ当量１６６）２６．７重量％と、第１の硬化剤としてメチルヘキサヒドロ無水フタル酸（日立化成製、ＨＮ−２２００−Ｒ、当量８３）１６．４重量％と、無機充填材として球状シリカ（アドマテックス製、ＳＯ−２５Ｈ、平均粒子径０．５μｍ）５５重量％と、カップリング剤としてγ−グリシドキシプロピルトリメトキシシラン（信越化学製、ＫＢＭ−４０３）１．３重量％と、顔料としてカーボンブラック（三菱化学製、ＭＡ−６００）０．１重量％と、硬化促進剤として２−フェニル−４メチルイミダゾール０．５重量％とを用いた。
第２の硬化性樹脂としてビフェニル型エポキシ樹脂（ＹＸ４０００Ｈ、ジャパンエポキシレジン製、融点１０８℃、エポキシ当量１８５）１６．７重量％と、第２の硬化剤としてテトラヒドロキシ無水フタル酸（新日本理化製、リカシッドＴＨ）１２．６重量％と、２メチルイミダゾール（キュアゾール２ＭＺ、四国化成製）０．３重量％と、無機充填材として球状溶融シリカ（ＦＢ６０、電気化学製、平均粒径２４μｍ）７０重量％と、カーボンブラック（ＭＡ６００、三菱化学製）０．２重量％と、カルナバワックス（東亜化成製）０．２重量％とを用いた。
【００５２】
（実施例５）
第１の封止樹脂の配合を以下のようにした以外は、実施例１と同様にした。
硬化性樹脂としてビスフェノールＦ型エポキシ樹脂（日本化薬製、ＲＥ−４０３Ｓ、当量１６６）２８．９重量％と、硬化剤として液状ポリフェノール（明和化成製、ＭＥＨ−８０００Ｈ、水酸基当量１４１）２４．６重量％と、無機充填材として球状シリカ（アドマテックス製、ＳＯ−２５Ｈ、平均粒子径０．５μｍ）４０重量％と、カップリング剤としてγ−グリシドキシプロピルトリメトキシシラン（信越化学製、ＫＢＭ−４０３）１．５重量％と、顔料としてカーボンブラック（三菱化学製、ＭＡ−６００）０．１重量％と、硬化促進剤として２−フェニル−４メチルイミダゾール０．６重量％と、低応力材としてＶＴＢＮ（宇部興産製、ＶＴＢＮＸ１３００Ｘ３３）２．８重量％を用いた。
【００５３】
（実施例６）
第１の封止樹脂の充填を以下のようにした以外は、実施例１と同様にした。
上述の半導体パッケージを１１０℃の熱板上で加熱し、半導体素子の一辺に第１の封止樹脂をディスペンスし充填させ、１２０℃のオーブンで５０分間、第１の封止樹脂を半硬化した。第１の封止樹脂の反応率は、８７％であった。
【００５４】
（実施例７）
実施例３で用いた第１の封止樹脂および第２の封止樹脂を用いて、第１の封止樹脂の充填を以下のようにした以外は、実施例１と同様にした。
上述の半導体パッケージを１１０℃の熱板上で加熱し、半導体素子の一辺に第１の封止樹脂をディスペンスし充填させ、１２０℃のオーブンで８０分間、第１の封止樹脂を半硬化した。第１の封止樹脂の反応率は、８３％であった。
【００５５】
（比較例１）
第１の封止樹脂として、以下のアミン系硬化剤を使用したものを用いた以外は、実施例１と同様にした。
第１の硬化性樹脂としてビスフェノールＦ型エポキシ樹脂（日本化薬製、ＲＥ−４０３Ｓ、エポキシ当量１６６）３１．５重量％と、第１の硬化剤としてジエチルジアミノジフェニルメタン（日本化薬製、カヤハードＡＡ、当量６３）１１．９重量％と、無機充填材として球状シリカ（アドマテックス製、ＳＯ−２５Ｈ、平均粒子径０．５μｍ）５５重量％と、カップリング剤としてγ−グリシドキシプロピルトリメトキシシラン（信越化学製、ＫＢＭ−４０３）１．５重量％と、顔料としてカーボンブラック（三菱化学製、ＭＡ−６００）０．１重量％と、硬化促進剤として２−フェニル−４メチルイミダゾール０．５重量％とを用いた。
【００５６】
（比較例２）
第２の封止樹脂として、以下のアミン系硬化剤を使用したものを用いた以外は、実施例１と同様にした。
第２の硬化性樹脂としてビフェニル型エポキシ樹脂（ＹＸ４０００Ｈ、ジャパンエポキシレジン製、融点１０８℃、エポキシ当量１８５）２２．１重量％と、第２の硬化剤としてジエチルジアミノジフェニルメタン（カヤハードＡＡ、日本化薬製、当量６３）７．４重量％と、トリフェニルホスフィン（ＴＰＰ、北興化学製）０．１５重量％と、球状溶融シリカ（ＦＢ６０、電気化学製、平均粒径２４μｍ）７０重量％と、カーボンブラック（ＭＡ６００、三菱化学製）０．２重量％と、カルナバワックス（東亜化成製）０．２重量％とを用いた。
【００５７】
各実施例および比較例で得られた半導体装置について、以下の評価を行った。評価項目を内容と共に示す。得られた結果を表１に示す。
▲１▼接着性
第１の封止樹脂と第２の封止樹脂との界面の接着性を下記のように評価した。接着性Ａ
各実施例および比較例で得られた半導体装置を吸湿処理（３０℃／６０％／１９２時間）、耐リフロー試験（ＪＥＤＥＣ２２０℃条件）３回、熱衝撃試験（−５５℃／３０分〜１２５℃／３０分、１，０００サイクル）を行った後に、超音波探傷機（ＳＡＴ）にてアンダーフィル材とモールド材の積層界面の剥離について観察を行い、剥離した半導体装置の数を評価した。
接着性Ｂ
各実施例および比較例で得られた半導体装置を吸湿処理（６０℃／６０％／１２０時間）、耐リフロー試験（ＪＥＤＥＣ２６０℃条件）３回、熱衝撃試験（−５５℃／３０分〜１２５℃／３０分、１，０００サイクル）を行った後に、超音波探傷機（ＳＡＴ）にてアンダーフィル材とモールド材の積層界面の剥離について観察を行い、剥離した半導体装置の数を評価した。
接着性Ｃ
各実施例および比較例で得られた半導体装置を吸湿処理（８５℃／６０％／１６８時間）、耐リフロー試験（ＪＥＤＥＣ２６０℃条件）３回、熱衝撃試験（−５５℃／３０分〜１２５℃／３０分、１，０００サイクル）を行った後に、超音波探傷機（ＳＡＴ）にてアンダーフィル材とモールド材の積層界面の剥離について観察を行い、剥離した半導体装置の数を評価した。
【００５８】
▲２▼流動性
第１の封止樹脂の流動性は、第１の封止樹脂を半導体パッケージに充填し始めてから充填が完了するまでに要した時間を目視で評価した。
【００５９】
▲３▼半田耐熱性
半田耐熱性は、各実施例および比較例で得られた半導体装置を吸湿処理（３０℃／６０％／１９２時間）、耐リフロー試験（ＪＥＤＥＣ２２０℃条件）３回、熱衝撃試験（−５５℃／３０分〜１２５℃／３０分、１，０００サイクル）を行った後に半導体素子と、第１の封止樹脂との剥離状態で評価した。各符号は、以下の通りである。
◎：剥離等が全く無し。
○：一部剥離等が有るが、実用上使用可能である。
△：一部剥離等有り、実用上使用不可能である。
×：剥離等有り。
【００６０】
【表１】

【００６１】
表から明らかなように、実施例１〜７は、第１の封止樹脂と第２の封止樹脂との接着性に優れており、半導体装置の信頼性が向上していることが示された。
また、第１の封止樹脂および第２の封止樹脂の硬化剤としてフェノール系硬化剤を用いた場合、半田耐熱性にも優れていた。
また、第１の封止樹脂を半硬化状態で第２の封止樹脂を充填した後に、第１の封止樹脂と第２の封止樹脂とを硬化させた場合、より厳しい条件（吸湿条件、リフロー温度）においても半導体装置の信頼性に優れていた。
【００６２】
【発明の効果】
本発明によれば、実施例１〜７は、第１の封止樹脂と第２の封止樹脂との接着性に優れており、半導体装置の信頼性が向上する。
また、第１の封止樹脂を構成する第１の硬化性樹脂を液状のエポキシ樹脂とした場合、特に流動性にも優れる。
また、第１の封止樹脂を構成する第１の硬化性樹脂、第１の硬化剤および無機充填材の合計の含有量を９５％以上とした場合、第１の封止樹脂と第２の封止樹脂との界面の接着性を特に向上する。
また、第１の硬化剤および第２の硬化剤としてフェノール性水酸基を有する硬化剤を用いた場合、半導体装置の半田耐熱性にも優れる。
【図面の簡単な説明】
【図１】本発明の半導体装置の一例を模式的に示す断面図である。
【図２】本発明の半導体装置の一例を模式的に示す断面図である。
【図３】本発明の半導体装置の一例を模式的に示す断面図である。
【図４】本発明の半導体装置の一例を模式的に示す断面図である。
【図５】本発明の半導体装置の製造方法の一例を模式的に示す断面図である。
【符号の説明】
１ 半導体装置
２ 基板
３ 半導体素子
３ａ 他の半導体素子
３１ 突起状端子
４ 第１の封止樹脂
５ 第２の封止樹脂
６ ワイヤー
８ 間隙[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.
[0002]
[Prior art]
In recent years, with the increase in the size of semiconductor elements, the increase in the number of pins of semiconductor devices, and the diversification, the requirement for reliability of resin materials used in the periphery of semiconductor elements and the like has become severe. Conventionally, a semiconductor device in which a semiconductor element is bonded to a lead frame and sealed with a sealing resin has been mainstream. However, in recent years, a semiconductor device such as a ball grid array (BGA) is increasing due to the limit of the number of pins. . As a method of connecting a semiconductor element mounted on a BGA to an interposer (substrate), there are a method of connecting a semiconductor element to the interposer by wire bonding, a method of connecting a semiconductor element to the interposer by flip chip, and the like.
[0003]
In a semiconductor device of a type in which a semiconductor element is connected to an interposer by flip chip, a sealing resin called an underfill material is filled / injected into a gap between the semiconductor element electrically bonded by a bump and the substrate in order to improve reliability. Has been.
A sealing resin called an underfill material is generally composed of a curable resin, a curing agent, and a filler, and fills gaps between semiconductor elements, interposers, and bumps of a semiconductor device using a capillary phenomenon or the like.
[0004]
In recent years, in order to improve impact resistance and moisture absorption resistance of a semiconductor device in which a semiconductor element is connected to an interposer by flip chip, the semiconductor element and the interposer are sealed with an underfill material, and then transferred to a mold. Development of a semiconductor device that further seals the periphery with a sealing material (hereinafter referred to as a molding material) has been performed (for example, see Patent Document 1).
[0005]
However, in the semiconductor device obtained by sealing the periphery with the mold material after sealing the underfill material, the adhesive force at the interface between the underfill material and the mold material is not sufficient. Therefore, there is a problem that peeling occurs at the interface between the underfill material and the molding material immediately after sealing the molding material or in a severe environment with a large temperature change (after reflowing or in a severe cooling and cycling environment). If peeling occurs at this interface, the progress of peeling to the semiconductor element or interposer, cracks in the semiconductor device, intrusion of moisture, and the like are caused, and reliability is lowered.
[0006]
[Patent Document 1]
JP 2001-326304 A
[0007]
[Problems to be solved by the invention]
An object of the present invention is to improve the reliability of a semiconductor device by preventing internal defects in a sealing resin constituting the semiconductor device.
[0008]
[Means for Solving the Problems]
Such an object is achieved by the present invention described in the following (1) to (10).
(1) First including a substrate, a semiconductor element provided on at least one side of the substrate, a first curable resin and a first curing agent for sealing between the substrate and the semiconductor element. A second resin composition comprising: a first sealing resin composed of the resin composition; a second curable resin surrounding at least the entire periphery of the semiconductor element; and a second curing agent. And a second sealing resin that is configured, and after being sealed with the first sealing resin, the semiconductor device surrounds at least the entire side portion of the semiconductor element with the second sealing resin. The semiconductor device is characterized in that the first curing agent and the second curing agent are the same kind of curing agent.
(2) The semiconductor device according to (1), wherein the first curable resin and the second curable resin are the same type of curable resin.
(3) The semiconductor device according to (1) or (2), wherein the first curable resin is an epoxy resin.
(4) The semiconductor device according to (3), wherein the epoxy resin is an epoxy resin that is liquid at normal temperature.
(5) The semiconductor device according to any one of (1) to (4), wherein the second curable resin is an epoxy resin.
(6) The semiconductor device according to any one of (1) to (5), wherein the first resin composition further includes an inorganic filler.
(7) The semiconductor according to (6), wherein the total content of the first curable resin, the first curing agent, and the inorganic filler is 95% by weight or more of the entire first resin composition. apparatus.
(8) The semiconductor device according to any one of (1) to (7), wherein the first and second curing agents have a phenolic hydroxyl group.
(9) First including a substrate, a semiconductor element provided on at least one side of the substrate, a first curable resin and a first curing agent for sealing between the substrate and the semiconductor element. A first sealing resin composed of the resin composition, a second curable resin surrounding at least the entire circumference of the semiconductor element, and a second curing agent of the same type as the first curing agent. And a second sealing resin composed of a second resin composition, and after sealing with the first sealing resin, at least a side of the semiconductor element with the second sealing resin A method of manufacturing a semiconductor device surrounding the entire circumference of the semiconductor device, the first step of filling the uncured first sealing resin between the substrate and the semiconductor element, and the uncured first A second step of curing the sealing resin, and the uncured so as to surround at least the entire periphery of the side portion of the semiconductor element. A third step of supplying a second sealing resin, a method of manufacturing a semiconductor device, characterized in that it comprises a fourth step of curing the second sealing resin uncured.
(10) First including a substrate, a semiconductor element provided on at least one side of the substrate, a first curable resin and a first curing agent for sealing between the substrate and the semiconductor element. A first sealing resin composed of the resin composition, a second curable resin surrounding at least the entire circumference of the semiconductor element, and a second curing agent of the same type as the first curing agent. And a second sealing resin composed of a second resin composition, and after sealing with the first sealing resin, at least a side of the semiconductor element with the second sealing resin A method of manufacturing a semiconductor device surrounding the entire circumference of the semiconductor device, the first step of filling the uncured first sealing resin between the substrate and the semiconductor element, and the uncured first A second step in which the sealing resin is in a semi-cured or higher cured state, and at least the entire side portion of the semiconductor element A third step of supplying the uncured second sealing resin so as to surround the first sealing resin, and the first sealing resin not yet completely cured and the uncured second sealing resin. A method for manufacturing a semiconductor device, comprising: a fourth step of curing.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a semiconductor device and a method for manufacturing the semiconductor device of the present invention will be described in detail.
The semiconductor device of the present invention includes a substrate, a semiconductor element provided on at least one side of the substrate, a first curable resin and a first curing agent that seal between the substrate and the semiconductor element. A second encapsulating material comprising a first encapsulating resin comprising a first resin composition, a second curable resin surrounding at least the entire circumference of the semiconductor element, and a second curing agent. A second sealing resin composed of a resin composition, and after sealing the first curable resin, surrounds at least the entire side portion of the semiconductor element with the second sealing resin. In the semiconductor device, the first curing agent and the second curing agent are the same kind of curing agent.
[0010]
The method for manufacturing a semiconductor device according to the present invention includes a substrate, a semiconductor element provided on at least one side of the substrate, a first curable resin for sealing between the substrate and the semiconductor element, 1st sealing resin comprised by the 1st resin composition containing 1 hardening | curing agent, 2nd curable resin surrounding the at least side part perimeter of the said semiconductor element, and said 1st hardening | curing agent And a second sealing resin comprising a second resin composition containing the same type of second curing agent, and after sealing the first curable resin, the second sealing resin A method of manufacturing a semiconductor device that surrounds at least the entire periphery of a side portion of the semiconductor element with a stop resin, the first step of filling the uncured first sealing resin between the substrate and the semiconductor element A second step of curing the uncured first sealing resin, and at least a side of the semiconductor element The method includes a third step of supplying the uncured second sealing resin so as to surround the entire periphery, and a fourth step of curing the uncured second sealing resin. Is.
[0011]
Hereinafter, the semiconductor device will be described.
A semiconductor device of the present invention will be described based on a preferred embodiment.
FIG. 1 is a cross-sectional view schematically showing a semiconductor device of the present invention.
The semiconductor device 1 includes a substrate 2, a semiconductor element 3 provided on the upper side (the upper side in the drawing) of the substrate 2 via a gap, and a first sealing resin 4 that seals between the substrate 2 and the semiconductor element 3. And a second sealing resin 5 surrounding the semiconductor element 3.
The semiconductor element 3 and the substrate 2 are connected by the protruding electrode 31.
[0012]
The first sealing resin 4 is composed of a first resin composition containing a first curable resin and a first curing agent.
Moreover, the 2nd sealing resin 5 is comprised with the 2nd resin composition containing 2nd curable resin and 2nd hardening | curing agent.
Here, the first curing agent and the second curing agent are the same kind of curing agent. Thereby, the adhesiveness of the interface of the 1st sealing resin 4 and the 2nd sealing resin 5 can be improved. The reason why the adhesion at the interface can be improved is that the compatibility of the uncured second sealing resin 5 with respect to the cured first sealing resin 4 is improved and the adhesion is improved, and the cured first It is considered that the reaction of the second sealing resin 5 with respect to the reactive group (for example, epoxy group) remaining in the sealing resin 4 easily proceeds and the adhesion is improved by chemical bonding.
Moreover, it is preferable that the said 1st hardening | curing agent and a 2nd hardening | curing agent have the same reactive group. Examples of the same reactive group include phenolic hydroxyl groups and amino groups.
[0013]
The second sealing resin 5 has a function of protecting the semiconductor element 3.
The second sealing resin 5 is composed of a second resin composition containing a second curable resin and a second curing agent.
Examples of the second curable resin include phenol novolac resins, cresol novolac resins, novolac type phenol resins such as bisphenol A type novolak resins, phenol resins such as resol type phenol resins, phenol novolac type epoxy resins, and cresol novolac type epoxies. Novolak type epoxy resin such as resin, bisphenol type epoxy resin such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, hydroquinone type epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl modified Triphenol methane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene modified phenol type epoxy resin, naphthol type epoxy resin, Examples include epoxy resins such as aralkyl epoxy resins such as talene type epoxy resins, phenol aralkyl type epoxy resins having a phenylene and / or biphenylene skeleton, and naphthol aralkyl type epoxy resins having a phenylene and / or biphenylene skeleton. It may be used as a mixture). Here, the epoxy resin means all monomers, oligomers and polymers having two or more epoxy groups in one molecule. Examples include a resin having a triazine ring such as a urea (urea) resin and a melamine resin, an unsaturated polyester resin, a bismaleimide resin, a polyurethane resin, a diallyl phthalate resin, a silicone resin, a resin having a benzoxazine ring, and a cyanate ester resin. Among these, an epoxy resin is preferable. Thereby, electrical characteristics can be improved. Furthermore, the fluidity that can be molded can be maintained even when a large amount of inorganic filler is added.
[0014]
Although content of the said 2nd curable resin is not specifically limited, 3-30 weight% of the whole said 2nd resin composition is preferable, and 5-20 weight% is especially preferable. If the content is less than the lower limit, fluidity may be reduced and it may be difficult to seal the resin, and if the content exceeds the upper limit, solder heat resistance may be reduced.
[0015]
Examples of the second curing agent include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylene diamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), In addition to aromatic polyamines such as diaminodiphenyl sulfone (DDS), amine curing agents such as polyamine compounds including dicyandiamide (DICY), organic acid dihydrazide, etc., phenolic curing agents such as novolac type phenol resins and phenol polymers (phenolic) A curing agent having a hydroxyl group), alicyclic acid anhydrides (liquid acid anhydrides) such as hexahydrophthalic anhydride (HHPA), methyltetrahydrophthalic anhydride (MTHPA), trimellitic anhydride (TMA), pyromellitic anhydride Acid (PMDA), acid anhydride curing agents such as aromatic acid anhydrides such as benzophenonetetracarboxylic acid (BTDA), polyamide resins, polysulfide resins.
[0016]
Moreover, when using the above-mentioned epoxy resin as said 2nd curable resin, although a 2nd hardening | curing agent is not specifically limited, It is preferable to use a phenol type hardening | curing agent (curing agent which has a phenolic hydroxyl group). Here, the phenolic curing agent is a monomer, oligomer or polymer in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited. Specifically, it has a novolak type phenolic resin such as phenol novolak resin or cresol novolak resin, a modified phenolic resin such as triphenolmethane type phenolic resin, terpene modified phenolic resin or dicyclopentadiene modified phenolic resin, phenylene and / or biphenylene skeleton. Examples include phenol aralkyl resins, aralkyl type phenol resins such as naphthol aralkyl resins having a phenylene and / or biphenylene skeleton, and bisphenol compounds. These may be used alone or in combination.
[0017]
Although content of the said 2nd hardening | curing agent is not specifically limited, 2 to 10 weight% of the whole said 2nd resin composition is preferable, and 4 to 7 weight% is especially preferable. If the content is less than the lower limit value, the fluidity may be inferior and the effect of improving the adhesion with the first sealing resin 4 may be reduced. If the content exceeds the upper limit value, the amount of moisture absorption is increased and the adhesion after reflow is increased. The effect of improving the performance may be reduced.
When the second curable resin is an epoxy resin, a phenolic curing agent (a curing agent having a phenolic hydroxyl group) is preferably used as the second curing agent, and in that case, the epoxy group of the epoxy resin is used. The equivalent ratio of the phenolic curing agent to the phenolic hydroxyl group (epoxy group / phenolic hydroxyl group) is not particularly limited, but is preferably 0.5 to 2.0, particularly preferably 0.7 to 1.5. When the equivalence ratio is within the above range, the curability and moisture resistance reliability are particularly excellent.
[0018]
The second resin composition is not particularly limited, but preferably contains an inorganic filler.
Examples of the inorganic filler include silicates such as talc, fired clay, unfired clay, mica, and glass, titanium oxide, alumina, fused silica (fused spherical silica, fused crushed silica), silica powder such as crystalline silica, and the like. Oxides, carbonates such as calcium carbonate, magnesium carbonate, hydrotalcite, hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide, sulfates or sulfites such as barium sulfate, calcium sulfate, calcium sulfite And borate salts such as zinc borate, barium metaborate, aluminum borate, calcium borate and sodium borate, and nitrides such as aluminum nitride, boron nitride and silicon nitride. The aforementioned inorganic fillers may be used alone or in combination. Among these, silica powders such as fused silica and crystalline silica are preferable, and spherical fused silica is particularly preferable. Thereby, heat resistance, moisture resistance, strength, etc. can be improved. The shape of the inorganic filler is not particularly limited, but is preferably a true sphere and preferably has a broad particle size distribution. Thereby, the fluidity | liquidity of the 2nd sealing resin 5 can be improved especially.
Furthermore, the surface of the inorganic filler may be surface-treated with a coupling agent.
[0019]
Although content of the said inorganic filler contained in a 2nd resin composition is not specifically limited, 20 to 95 weight% of the whole said 2nd resin composition is preferable, and 30 to 90 weight% is especially preferable. If the content is less than the lower limit, the moisture resistance may decrease, and if it exceeds the upper limit, the fluidity may decrease.
[0020]
In addition, the second resin composition includes diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof, tributylamine, and the like within a range not impairing the object of the present invention. Amine compounds such as benzyldimethylamine, imidazole compounds such as 2-methylimidazole, organic phosphines such as triphenylphosphine and methyldiphenylphosphine, tetraphenylphosphonium / tetraphenylborate, tetraphenylphosphonium / tetrabenzoic acid borate, tetraphenyl Tetra-substituted phosphonium ・ tetra-substituted borate such as phosphonium ・ tetranaphthoic acid borate, tetraphenylphosphonium ・ tetranaphthoyloxyborate, tetraphenylphosphonium ・ tetranaphthyloxyborate Curing accelerators, epoxy silanes, mercapto silanes, amino silanes, alkyl silanes, ureido silanes, vinyl silanes and other silane coupling agents, titanate coupling agents, aluminum coupling agents, coupling agents such as aluminum / zirconium coupling agents, Colorants such as carbon black and bengara, natural waxes such as carnauba wax, synthetic waxes such as polyethylene wax, higher fatty acids such as stearic acid and zinc stearate and metal salts thereof, mold release agents such as paraffin, silicone oil, silicone rubber Low stress components such as brominated epoxy resin, antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene and other flame retardants, inorganic ion exchangers such as bismuth oxide hydrate It can be added additives.
[0021]
The first sealing resin 4 has a function of improving the connection reliability between the substrate 2 and the semiconductor element 3.
The 1st sealing resin 4 is comprised with the 1st resin composition containing 1st curable resin and 1st hardening | curing agent.
Examples of the first curable resin include phenol novolac resins, cresol novolac resins, novolac phenol resins such as bisphenol A type novolac resins, phenol resins such as resol type phenol resins, phenol novolac type epoxy resins, and cresol novolac type epoxies. Novolak type epoxy resin such as resin, bisphenol type epoxy resin such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, hydroquinone type epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl modified Triphenol methane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene modified phenol type epoxy resin, naphthol type epoxy resin, Aralkyl epoxy resins such as tarene type epoxy resins, phenol aralkyl type epoxy resins having a phenylene and / or biphenylene skeleton, naphthol aralkyl type epoxy resins having a phenylene and / or biphenylene skeleton, silicone modified epoxy resins having a disiloxane structure (particularly An epoxy resin such as a silicone-modified epoxy resin having a disiloxane structure represented by the following chemical formula 1 is preferable (these may be used alone or in combination). Here, the epoxy resin means all monomers, oligomers and polymers having two or more epoxy groups in one molecule. Examples include a resin having a triazine ring such as a urea (urea) resin and a melamine resin, an unsaturated polyester resin, a bismaleimide resin, a polyurethane resin, a diallyl phthalate resin, a silicone resin, a resin having a benzoxazine ring, and a cyanate ester resin. Among these, an epoxy resin is preferable, and an epoxy resin that is liquid at room temperature is particularly preferable. Thereby, workability | operativity can be improved. Furthermore, the filling property of the first sealing resin 4 can be improved.
[Chemical 1]

[0022]
Examples of the epoxy resin that is liquid at room temperature include bisphenol diglycidyl ethers, glycidyl ether that is liquid at room temperature obtained by reaction of phenol novolac and epichlorohydrin, silicone-modified epoxy resins that are liquid at room temperature, and the like. A mixture etc. are mentioned.
Furthermore, these liquid resins are mixed with a crystalline epoxy resin that can be liquefied at room temperature, such as diglycidyl ether of dihydroxynaphthalene or diglycidyl ether of tetramethylbiphenol, but crystallizes when the purity is high. Can also be used.
Moreover, what mixed the epoxy resin solid at normal temperature with the said epoxy resin liquid at normal temperature, and was made into the liquid state can also be used.
Although content of the said solid epoxy resin is not specifically limited, 50 weight% or less of the said whole epoxy resin is preferable, and 20 weight% or less is especially preferable. It becomes easy to control the characteristic of the hardened | cured material of the 1st sealing resin 4 as content is in the said range.
[0023]
Further, the second curable resin and the first curable resin are not particularly limited, but are preferably the same type of curable resin. Thereby, the adhesiveness of the interface of the 2nd sealing resin 5 and the 1st sealing resin 4 can be improved especially.
Examples of the same type of curable resin include epoxy resins and phenol resins. Among these, epoxy resins are preferable. Thereby, it is excellent in both heat resistance and an electrical property.
[0024]
Although content of the said 1st curable resin is not specifically limited, 4-70 weight% of the whole said 1st resin composition is preferable, and 10-50 weight% is especially preferable. When the content is less than the lower limit, workability and fluidity may be lowered, and when the content exceeds the upper limit, heat cycle resistance (crack resistance and solder deformation prevention) may be lowered.
[0025]
The first curing agent is the same type as the second curing agent. Examples of the same type of curing agent include amine-based curing agents, phenol-based curing agents, and acid anhydride curing agents. Among these, phenolic curing agents are preferable. Thereby, a water absorption rate can be made low and it can improve crack resistance by it. That is, as the curing agent for the second sealing resin 5, a phenolic curing agent is preferably used in that the water absorption can be reduced. The phenolic curing agent is also used as the curing agent for the first sealing resin 4. By using this, it is possible to further improve the water absorption rate of the semiconductor device as a whole, thereby further improving the crack resistance.
Moreover, since the phenol type curing agent as the second curing agent can easily control the reaction of the second sealing resin 5 as compared with other curing agents, it is favorable when manufacturing a semiconductor device. It is also possible to improve the adhesiveness at the interface between the first sealing resin 4 and the second sealing resin 5 in a state in which sufficient fluidity is ensured.
Furthermore, the phenolic curing agent as the second curing agent can be highly filled with an inorganic filler because its reactivity control is easy. Therefore, the adhesiveness at the interface between the first sealing resin 4 and the second sealing resin 5 can be improved in a state where the excellent reliability of the semiconductor device is ensured.
[0026]
Examples of the first curing agent include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), In addition to aromatic polyamines such as diaminodiphenylsulfone (DDS), amine-based curing agents such as polyamine compounds including dicyandiamide (DICY), organic acid dihydrazide, etc., novolac-type phenol resins such as phenol novolac resin and cresol novolac resin, triphenol Modified phenolic resins such as methane type phenolic resin, terpene modified phenolic resin, dicyclopentadiene modified phenolic resin, phenolic having phenylene and / or biphenylene skeleton Phenolic curing agents (having two or more phenolic hydroxyl groups in one molecule) such as alkyl resins, aralkyl-type phenol resins such as naphthol aralkyl resins having a phenylene and / or biphenylene skeleton, bisphenol compounds, compounds represented by the following chemical formula 2 Monomers, oligomers, polymers in general), alicyclic acid anhydrides (liquid acid anhydrides) such as hexahydrophthalic anhydride (HHPA), methyltetrahydrophthalic anhydride (MTHPA), trimellitic anhydride (TMA), pyromellitic anhydride Examples include acid anhydride curing agents such as aromatic acid anhydrides such as acid (PMDA) and benzophenonetetracarboxylic acid (BTDA), polyamide resins, and polysulfide resins.
[Chemical 2]

Among these, a curing agent that is liquid at room temperature (particularly a phenolic curing agent that is liquid at room temperature) is preferable, and a compound represented by Chemical Formula 2 is most preferable. Thereby, the fluidity | liquidity of the 1st sealing resin 4 can be improved especially.
[0027]
Although content of the said 1st hardening | curing agent is not specifically limited, 1 to 50 weight% of the whole said 1st resin composition is preferable, and 3 to 40 weight% is especially preferable. When the content is within the above range, the first resin composition is particularly efficiently cured.
Further, when the first curable resin is an epoxy resin and the first curing agent is a phenolic curing agent, the equivalent ratio of the epoxy group of the epoxy resin to the phenolic hydroxyl group of the phenolic curing agent (Epoxy group / phenolic hydroxyl group) is not particularly limited, but is preferably 0.3 to 3.0, particularly preferably 0.8 to 2.5. When the equivalent ratio is within the above range, the curability and moisture resistance reliability (adhesiveness at the interface after moisture absorption treatment) are particularly excellent.
[0028]
The first resin composition is not particularly limited, but preferably contains an inorganic filler. Thereby, moisture resistance and heat cycle resistance (crack resistance and solder deformation prevention) can be improved.
Examples of the inorganic filler include silicates such as talc, calcined clay, unfired clay, mica and glass, oxides such as titanium oxide, alumina, silica and fused silica, calcium carbonate, magnesium carbonate, hydrotalcite and the like. Carbonates, hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide, sulfates or sulfites such as barium sulfate, calcium sulfate, calcium sulfite, zinc borate, barium metaborate, aluminum borate, boron Examples thereof include borates such as calcium oxide and sodium borate, and nitrides such as aluminum nitride, boron nitride, and silicon nitride. Among these, silica (especially spherical fused silica) is preferable. Thereby, fluidity | liquidity and supply stability can be improved.
[0029]
The average particle diameter of the inorganic filler (particularly, spherical silica) is not particularly limited, but is preferably 10 μm or less, and particularly preferably 5 μm or less. When the average particle diameter is within the above range, the filling property of the first sealing resin 4 can be particularly improved.
The first sealing resin 4 fills a gap with a semiconductor element substrate or the like of a semiconductor device by utilizing a capillary phenomenon or the like, and the gap is often 150 μm or less. Therefore, in order to ensure the fluidity of the first sealing resin 4 in the gap, the inorganic filler used in the first resin composition is preferably within the above range.
[0030]
Although content of the said inorganic filler contained in a 1st resin composition is not specifically limited, 30 to 90 weight% of the whole said 1st resin composition is preferable, and 40 to 75 weight% is especially preferable. When the content is less than the lower limit value, heat cycle resistance (crack resistance and solder deformation prevention) may be lowered, and when the content exceeds the upper limit value, workability and fluidity may be lowered.
[0031]
The total content of the first curable resin, the first curing agent, and the inorganic filler is not particularly limited, but is preferably 95% by weight or more of the entire first resin composition, particularly 97 to 99% by weight. % Is preferred. When the content is within the above range, the adhesiveness at the interface between the first sealing resin 4 and the second sealing resin 5 is particularly excellent. The reason is that it is possible to prevent the component that lowers the adhesiveness of the second sealing resin 5 from exuding on the surface of the first sealing resin 4.
[0032]
The first resin composition may be mixed with additives such as a curing accelerator, a coupling agent, a low stress agent, a pigment, a dye, a leveling agent, and an antifoaming agent as long as the object of the present invention is not impaired. it can.
[0033]
In the semiconductor device used in the present invention, the semiconductor element 3 is disposed on the substrate 2 so as to face the gap, and the gap between the semiconductor element 3 and the substrate 2 is sealed with the first sealing resin 4. It is obtained by further sealing the periphery with the second sealing resin 5.
The semiconductor device of the present invention can also be applied to a semiconductor device having a configuration other than that shown in FIG. Examples of semiconductor devices having other configurations include those shown in FIGS. 2 to 4 are schematic views of the semiconductor device 1 having other configurations. In the following, the description will focus on differences from the semiconductor device shown in FIG.
[0034]
In the semiconductor device 1 shown in FIG. 2, the upper surface of the semiconductor element 3 is not covered with the second sealing resin 5 but is opened (that is, the entire circumference of the side of the semiconductor element 3 is the second side). Surrounded by the sealing resin 5).
[0035]
The semiconductor device 1 shown in FIG. 3 has another semiconductor element 3a mounted on the upper surface of the semiconductor element 3 via an adhesive, an adhesive film, or the like (not shown). Wire bonding is performed, and the one connected to the substrate 2 is sealed with the second sealing resin 5.
[0036]
In the semiconductor device 1 shown in FIG. 4, the second sealing resin 5 is also formed on the side of the substrate 2 opposite to the side on which the semiconductor element 3 is mounted.
2 to 4, the resin composition of the first sealing resin 4 and the second sealing resin 5 is the same as that of the semiconductor device 1 shown in FIG.
[0037]
Among the configurations of the semiconductor device as described above, for example, the present invention can be suitably used for the one in which only one surface of the substrate 2 is sealed with the second sealing resin 5 as shown in FIGS. That is, compared with the case where the second sealing resin 5 seals both surfaces of the substrate 2, in the case of single-side sealing, the change in the amount of warpage with respect to the temperature change of the semiconductor device becomes large. For this reason, the stress applied to the laminated interface between the first sealing resin 4 and the second sealing resin 5 is large, and a stronger adhesive force is required.
[0038]
Next, a method for manufacturing a semiconductor device will be described.
FIG. 5 is a schematic view showing an example of a method for manufacturing a semiconductor device of the present invention.
In the method for manufacturing a semiconductor device of the present invention, a method having a semiconductor element 3 provided in advance on one side of the substrate 2 as shown in FIG. 5a can be used.
[0039]
First, the uncured first sealing resin 4 is filled in the gap 8 between the substrate 2 and the semiconductor element 3 provided on one side of the substrate 2.
As a method of filling the first sealing resin 4, the semiconductor device is placed on a hot plate, and the first sealing resin 4 is used by using an injector such as a syringe containing the first sealing resin 4. And the like in the vicinity of the semiconductor element 3 and expanded and filled in the gap 8 by capillary action.
In order to obtain the 1st sealing resin 4, the said 1st resin composition is mixed with a roll, a planetary mixer, etc., for example, Preferably it vacuum degasses.
The viscosity of the first resin composition (filling liquid) is not particularly limited, but is preferably 0.5 to 200 (Pa · s), and particularly preferably 1 to 100 (Pa · s). If the viscosity is less than the lower limit, the resin may spill from the discharge port of the filling device, and if the viscosity exceeds the upper limit, the fluidity may decrease.
The viscosity can be evaluated at a measurement condition of 0.5 to 5 rpm using, for example, a Brookfield viscometer, an E type viscometer or the like at normal temperature (25 ° C.).
[0040]
When the uncured first sealing resin 4 is filled as shown in FIG. 5b, the uncured first sealing resin 4 is cured.
Examples of a method for curing the uncured first sealing resin 4 include a heating method and a light irradiation method.
Although the heating conditions of the method of heating are not specifically limited, 140-180 degreeC x 10-180 minutes are preferable, and 150-165 degreeC x 30-120 minutes are especially preferable. If the heating condition is less than the lower limit, curing may be insufficient, and if it exceeds the upper limit, the effect of improving productivity may be reduced.
[0041]
Next, an uncured second sealing resin 5 is supplied so as to surround both the semiconductor element 3 and the cured first sealing resin 4.
Examples of the method for supplying the second sealing resin 5 include molding methods such as transfer molding, compression molding, and injection molding.
When the second sealing resin 5 is supplied, the second sealing resin composition is sufficiently uniformly mixed with the raw material using, for example, a mixer, and then further kneaded with a hot roll, a kneader, an extruder, or the like. It is obtained by melt-kneading with a machine, cooling and pulverizing.
Although the viscosity at the time of supplying the 2nd sealing resin 5 is not specifically limited, 30-300 (poise) is preferable and 50-200 (poise) is especially preferable. If the viscosity is less than the lower limit, the fluidity may be reduced and the adhesion to the first sealing resin 4 may be reduced. If the viscosity exceeds the upper limit, the generation of voids may be increased.
The viscosity can be determined by, for example, a Koka flow tester.
[0042]
When the uncured second sealing resin 5 is supplied as shown in FIG. 5c, the uncured second sealing resin 5 is cured. Examples of the method for curing the second sealing resin 5 include a heating method and a light irradiation method.
The heating condition of the heating method is not particularly limited, but is preferably 160 to 185 ° C. × 30 to 180 (seconds), and particularly preferably 170 to 185 ° C. × 50 to 120 (seconds). If the heating condition is less than the lower limit, run-off failure such as runner removal may occur, and if the upper limit is exceeded, the molding cycle time may increase and productivity may decrease.
[0043]
In the method for manufacturing a semiconductor device of the present invention, after filling with the uncured first sealing resin 4, the semi-cured state or more is cured, and the uncured second sealing resin 5 is supplied. The first sealing resin 4 and the second sealing resin 5 that are not completely cured may be cured. Thereby, the adhesiveness in the interface of the 1st sealing resin 4 and the 2nd sealing resin 5 can be improved more.
The semi-cured state of the first sealing resin 4 may be a state in which the semiconductor element 3 is fixed when the second sealing resin 5 is supplied, and strictly needs to be in a semi-cured state. No.
Specifically, the reaction rate of the first sealing resin 4 is preferably 50 to 90%, and particularly preferably 50 to 85%. When the reaction rate is less than the lower limit, the resin is not gelled, and the first sealing resin 4 may flow when the second sealing resin 5 is filled, which exceeds the upper limit. And the effect of improving the adhesiveness may be reduced.
The reaction rate can be evaluated using, for example, a differential scanning calorimeter (DSC).
Furthermore, it can also be set as the arbitrary hardening states between a semi-hardened state and a fully hardened state. That is, any value between 50% and 100% reaction rate may be used.
[0044]
The semiconductor device of the present invention is obtained by the manufacturing method as described above. In the above-described manufacturing method, the case where the second sealing resin 5 completely seals the periphery of the semiconductor element 3 from one side of the substrate 2 has been described, but the present invention is not limited to this. That is, for example, when at least the entire circumference of the side portion of the semiconductor element 3 is surrounded, or when the second sealing resin 5 is sealed on both surfaces of the substrate 2.
[0045]
【Example】
Hereinafter, although it demonstrates in detail based on the Example and comparative example of this invention, this invention is not limited to this.
(Example 1)
(1) Preparation of first sealing resin
Bisphenol F type epoxy resin (Nippon Kayaku, RE-403S, epoxy equivalent 166) 23.4% by weight as the first curable resin and liquid polyphenol (Maywa Kasei, MEH-8000H, as the first curing agent, Hydroxyl group equivalent 141) 19.8% by weight, spherical silica (manufactured by Admatechs, SO-25H, average particle size 0.5 μm) 55% by weight as inorganic filler, and γ-glycidoxypropyltrimethoxy as coupling agent 1.2% by weight of silane (manufactured by Shin-Etsu Chemical, KBM-403), 0.1% by weight of carbon black (manufactured by Mitsubishi Chemical, MA-600) as a pigment, and 2-phenyl-4-methylimidazole as a curing accelerator. The first resin constituting the first sealing resin by kneading 5% by weight with three rolls at room temperature and vacuum defoaming using a vacuum defoamer A composition was obtained.
[0046]
(2) Preparation of second sealing resin
As the second curable resin, biphenyl type epoxy resin (YX4000H, manufactured by Japan Epoxy Resin, melting point 108 ° C., epoxy equivalent 185) is 8.43% by weight, and as the second curing agent, phenol novolac resin (PR-HF-3, Made by Sumitomo Bakelite, softening point 80 ° C., hydroxyl equivalent 105) 4.22% by weight, triphenylphosphine (TPP, manufactured by Hokuko Chemical) 0.15% by weight, and spherical fused silica (FB60, manufactured by Electrochemical Co., Ltd.) as an inorganic filler , Average particle size 24 μm) 86.8% by weight, carbon black (MA600, manufactured by Mitsubishi Chemical) 0.2% by weight and carnauba wax (manufactured by Toa Kasei) 0.2% by weight in a mixer at 25 ° C. for 20 minutes After mixing, the mixture was kneaded at 95 ° C. for 5 minutes using two rolls, cooled and pulverized to obtain a second resin composition constituting the second sealing resin.
[0047]
(3) Filling (sealing) the first sealing resin
A semiconductor package in which a semiconductor element was previously formed on a substrate was used. The semiconductor elements and substrates used are as follows. The semiconductor element uses a size of 10 mm × 10 mm × 0.35 mmt, the substrate is a 352 pBGA (size 35 mm × 35 mm × 0.56 mmt bismaleimide / triazine resin / glass cloth substrate, and the gate and runner are gold-plated. Used). The semiconductor element and the substrate used were bonded to the peripheral by 176 solder bumps. The height of the solder bump was 0.05 mm. Moreover, silicon nitride was used for the protective film of the semiconductor element, and PSR4000 made by Taiyo Ink was used for the solder resist on the substrate.
The above-described semiconductor package was heated on a hot plate at 110 ° C., and a first sealing resin was dispensed and filled on one side of the semiconductor element, and the first sealing resin was cured in an oven at 150 ° C. for 90 minutes.
[0048]
(4) Filling (sealing) the second sealing resin
Thereafter, using a transfer molding machine, the second sealing resin was sealed and molded at a mold temperature of 175 ° C., an injection pressure of 7.8 MPa, and a curing time of 2 minutes. The runner of the obtained molded product, the second sealing resin of the gate portion and the gold plating portion were separated manually. Then, it was post-cured at 175 ° C. for 2 hours to obtain a semiconductor device. Ten samples were used.
[0049]
(Example 2)
Example 1 was repeated except that the first curing agent was changed and the composition of the first sealing resin was changed as follows.
Bisphenol F type epoxy resin (manufactured by Nippon Kayaku, RE-403S, epoxy equivalent 166) 24.2% by weight as the first curable resin, and liquid polyphenol (Maywa Kasei, MEH-8000H, as the first curing agent) Hydroxyl group equivalent 141) 14.3% by weight and novolak type phenolic resin (manufactured by Sumitomo Bakelite, PR-HF-3) 4.7% by weight, and spherical silica (manufactured by Admatechs, SO-25H, average particle diameter) as an inorganic filler 0.5 μm) 55 wt%, γ-glycidoxypropyltrimethoxysilane (Shin-Etsu Chemical, KBM-403) 1.2 wt% as a coupling agent, and carbon black (Mitsubishi Chemical, MA-600 as a pigment) ) 0.1% by weight and 0.5% by weight of 2-phenyl-4-methylimidazole as a curing accelerator.
[0050]
(Example 3)
An amine curing agent was used as the first curing agent and the second curing agent, and the same procedure as in Example 1 was carried out except that the formulation was as follows.
Bisphenol F-type epoxy resin (Nippon Kayaku, RE-403S, epoxy equivalent 166) 31.5% by weight as the first curable resin, and diethyldiaminodiphenylmethane (Nippon Kayaku, Kayahard AA) as the first curing agent , Equivalent 63) 11.9% by weight, spherical silica (manufactured by Admatechs, SO-25H, average particle size 0.5 μm) 55% by weight as an inorganic filler, and γ-glycidoxypropyltrimethoxy as a coupling agent 1.5% by weight of silane (manufactured by Shin-Etsu Chemical, KBM-403), 0.1% by weight of carbon black (manufactured by Mitsubishi Chemical, MA-600) as a pigment, and 2-phenyl-4-methylimidazole as a curing accelerator. 5% by weight was used.
Biphenyl type epoxy resin (YX4000H, manufactured by Japan Epoxy Resin, melting point 108 ° C., epoxy equivalent 185) 22.1% by weight as the second curable resin, and diethyldiaminodiphenylmethane (Kayahard AA, Nippon Kayaku) as the second curing agent Manufactured, equivalent 63) 7.4% by weight, triphenylphosphine (TPP, manufactured by Hokuko Chemical) 0.15% by weight, spherical fused silica (FB60, manufactured by Denki Kagaku, average particle size 24 μm) 69.5% by weight Carbon black (MA600, manufactured by Mitsubishi Chemical Corporation) 0.2% by weight and carnauba wax (manufactured by Toa Kasei) 0.2% by weight were used.
[0051]
(Example 4)
An acid anhydride curing agent was used as the first curing agent and the second curing agent, and the same procedure as in Example 1 was carried out except that the formulation was as follows.
Bisphenol F type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., RE-403S, epoxy equivalent 166) 26.7% by weight as the first curable resin, and methylhexahydrophthalic anhydride (manufactured by Hitachi Chemical Co., Ltd., as the first curing agent) HN-2200-R, equivalent 83) 16.4% by weight, spherical silica (manufactured by Admatechs, SO-25H, average particle size 0.5 μm) 55% by weight as an inorganic filler, and γ-glycol as a coupling agent Sidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403) 1.3% by weight, carbon black (manufactured by Mitsubishi Chemical, MA-600) 0.1% by weight, and curing accelerator 2-phenyl- 4-methylimidazole 0.5% by weight was used.
16.7% by weight of a biphenyl type epoxy resin (YX4000H, manufactured by Japan Epoxy Resin, melting point 108 ° C., epoxy equivalent 185) as the second curable resin, and tetrahydroxyphthalic anhydride (manufactured by Nippon Nippon Chemical Co., Ltd.) as the second curing agent , Licacid TH) 12.6 wt%, 2 methylimidazole (Cureazole 2MZ, manufactured by Shikoku Kasei) 0.3 wt%, and spherical fused silica (FB60, manufactured by Denki Kagaku, average particle size 24 μm) 70 wt% as an inorganic filler %, Carbon black (MA600, manufactured by Mitsubishi Chemical) 0.2% by weight, and carnauba wax (manufactured by Toa Kasei) 0.2% by weight.
[0052]
(Example 5)
The same procedure as in Example 1 was conducted except that the first sealing resin was blended as follows.
Bisphenol F type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., RE-403S, equivalent 166) 28.9% by weight as a curable resin and liquid polyphenol (Maywa Kasei Co., Ltd., MEH-8000H, hydroxyl group equivalent 141) 24.6 as a curing agent 40% by weight of spherical silica (manufactured by Admatechs, SO-25H, average particle size 0.5 μm) as an inorganic filler, and γ-glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical, KBM) as a coupling agent -403) 1.5% by weight, carbon black (Mitsubishi Chemical, MA-600) 0.1% by weight as a pigment, 0.6% by weight of 2-phenyl-4-methylimidazole as a curing accelerator, low stress As a material, 2.8 wt% of VTBN (manufactured by Ube Industries, VTBNX1300X33) was used.
[0053]
(Example 6)
Example 1 was performed except that the filling of the first sealing resin was performed as follows.
The semiconductor package described above was heated on a hot plate at 110 ° C., and the first sealing resin was dispensed and filled on one side of the semiconductor element, and the first sealing resin was semi-cured in an oven at 120 ° C. for 50 minutes. . The reaction rate of the first sealing resin was 87%.
[0054]
(Example 7)
Example 1 was the same as Example 1 except that the first sealing resin and the second sealing resin used in Example 3 were used to fill the first sealing resin as follows.
The above-described semiconductor package was heated on a hot plate at 110 ° C., and the first sealing resin was dispensed and filled on one side of the semiconductor element, and the first sealing resin was semi-cured in an oven at 120 ° C. for 80 minutes. . The reaction rate of the first sealing resin was 83%.
[0055]
(Comparative Example 1)
The same operation as in Example 1 was performed except that the first sealing resin used the following amine-based curing agent.
Bisphenol F-type epoxy resin (Nippon Kayaku, RE-403S, epoxy equivalent 166) 31.5% by weight as the first curable resin, and diethyldiaminodiphenylmethane (Nippon Kayaku, Kayahard AA) as the first curing agent , Equivalent 63) 11.9% by weight, spherical silica (manufactured by Admatechs, SO-25H, average particle size 0.5 μm) 55% by weight as an inorganic filler, and γ-glycidoxypropyltrimethoxy as a coupling agent 1.5% by weight of silane (manufactured by Shin-Etsu Chemical, KBM-403), 0.1% by weight of carbon black (manufactured by Mitsubishi Chemical, MA-600) as a pigment, and 2-phenyl-4-methylimidazole as a curing accelerator. 5% by weight was used.
[0056]
(Comparative Example 2)
The second sealing resin was the same as Example 1 except that the following amine-based curing agent was used.
Biphenyl type epoxy resin (YX4000H, manufactured by Japan Epoxy Resin, melting point 108 ° C., epoxy equivalent 185) 22.1% by weight as the second curable resin, and diethyldiaminodiphenylmethane (Kayahard AA, Nippon Kayaku) as the second curing agent Manufactured, equivalent 63) 7.4% by weight, triphenylphosphine (TPP, manufactured by Hokuko Chemical) 0.15% by weight, spherical fused silica (FB60, manufactured by Denki Kagaku, average particle size 24 μm) 70% by weight, carbon Black (MA600, manufactured by Mitsubishi Chemical Corporation) 0.2% by weight and carnauba wax (manufactured by Toa Kasei) 0.2% by weight were used.
[0057]
The semiconductor device obtained in each example and comparative example was evaluated as follows. The evaluation items are shown together with the contents. The obtained results are shown in Table 1.
▲ 1 ▼ Adhesiveness
The adhesion at the interface between the first sealing resin and the second sealing resin was evaluated as follows. Adhesive A
The semiconductor device obtained in each example and comparative example was subjected to moisture absorption treatment (30 ° C./60%/192 hours), reflow resistance test (JEDEC 220 ° C. condition) three times, thermal shock test (−55 ° C./30 minutes to 125 ° C.) / 30 minutes, 1,000 cycles), an ultrasonic flaw detector (SAT) was used to observe the peeling of the laminated interface between the underfill material and the mold material, and the number of peeled semiconductor devices was evaluated.
Adhesive B
The semiconductor device obtained in each example and comparative example was subjected to moisture absorption treatment (60 ° C./60%/120 hours), reflow resistance test (JEDEC 260 ° C. condition) three times, thermal shock test (−55 ° C./30 minutes to 125 ° C.) / 30 minutes, 1,000 cycles), an ultrasonic flaw detector (SAT) was used to observe the peeling of the laminated interface between the underfill material and the mold material, and the number of peeled semiconductor devices was evaluated.
Adhesive C
The semiconductor device obtained in each example and comparative example was subjected to moisture absorption treatment (85 ° C./60%/168 hours), reflow resistance test (JEDEC 260 ° C. condition) three times, thermal shock test (−55 ° C./30 minutes to 125 ° C.) / 30 minutes, 1,000 cycles), an ultrasonic flaw detector (SAT) was used to observe the peeling of the laminated interface between the underfill material and the mold material, and the number of peeled semiconductor devices was evaluated.
[0058]
(2) Fluidity
The fluidity of the first sealing resin was evaluated by visual observation of the time required from the start of filling the semiconductor package with the first sealing resin to the completion of filling.
[0059]
(3) Solder heat resistance
The solder heat resistance was determined by subjecting the semiconductor devices obtained in the examples and comparative examples to moisture absorption treatment (30 ° C./60%/192 hours), reflow resistance test (JEDEC 220 ° C. condition) three times, and thermal shock test (−55 ° C. / 30 minutes to 125 ° C./30 minutes, 1,000 cycles), and evaluation was performed in a peeled state between the semiconductor element and the first sealing resin. Each code is as follows.
A: No peeling or the like.
○: Although there is some peeling, etc., it can be used practically.
Δ: Partially peeled off and practically unusable.
X: There is peeling or the like.
[0060]
[Table 1]

[0061]
As is apparent from the table, Examples 1 to 7 are excellent in adhesion between the first sealing resin and the second sealing resin, and the reliability of the semiconductor device is improved. It was.
Moreover, when a phenol type hardening | curing agent was used as a hardening | curing agent of 1st sealing resin and 2nd sealing resin, it was excellent also in solder heat resistance.
Further, when the first sealing resin and the second sealing resin are cured after filling the second sealing resin in a semi-cured state with the first sealing resin, more severe conditions (moisture absorption conditions) The reflow temperature was excellent in the reliability of the semiconductor device.
[0062]
【The invention's effect】
According to this invention, Examples 1-7 are excellent in the adhesiveness of 1st sealing resin and 2nd sealing resin, and the reliability of a semiconductor device improves.
Further, when the first curable resin constituting the first sealing resin is a liquid epoxy resin, the fluidity is particularly excellent.
Further, when the total content of the first curable resin, the first curing agent and the inorganic filler constituting the first sealing resin is 95% or more, the first sealing resin and the second sealing resin The adhesiveness at the interface with the sealing resin is particularly improved.
Further, when a curing agent having a phenolic hydroxyl group is used as the first curing agent and the second curing agent, the solder heat resistance of the semiconductor device is also excellent.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor device of the present invention.
FIG. 2 is a cross-sectional view schematically showing an example of a semiconductor device of the present invention.
FIG. 3 is a cross-sectional view schematically showing an example of a semiconductor device of the present invention.
FIG. 4 is a cross-sectional view schematically showing an example of a semiconductor device of the present invention.
FIG. 5 is a cross-sectional view schematically showing one example of a method for manufacturing a semiconductor device of the present invention.
[Explanation of symbols]
1 Semiconductor device
2 Substrate
3 Semiconductor elements
3a Other semiconductor elements
31 Protruding terminal
4 First sealing resin
5 Second sealing resin
6 wires
8 gap

Claims (10)

A substrate,
A semiconductor element provided on at least one side of the substrate;
A first sealing resin composed of a first resin composition containing a first curable resin and a first curing agent for sealing between the substrate and the semiconductor element;
A second sealing resin composed of a second resin composition containing a second curable resin and a second curing agent surrounding at least the entire periphery of the side of the semiconductor element; A semiconductor device that encloses at least the entire periphery of the semiconductor element with the second sealing resin after sealing with one sealing resin,
The first curing agent and the second curing agent are the same kind of curing agent. The semiconductor device according to claim 1, wherein the first curable resin and the second curable resin are the same type of curable resin. The semiconductor device according to claim 1, wherein the first curable resin is an epoxy resin. The semiconductor device according to claim 3, wherein the epoxy resin is an epoxy resin that is liquid at room temperature. The semiconductor device according to claim 1, wherein the second curable resin is an epoxy resin. The semiconductor device according to claim 1, wherein the first resin composition further contains an inorganic filler. The semiconductor device according to claim 6, wherein a total content of the first curable resin, the first curing agent, and the inorganic filler is 95% by weight or more of the entire first resin composition. The semiconductor device according to claim 1, wherein the first and second curing agents have a phenolic hydroxyl group. A substrate,
A semiconductor element provided on at least one side of the substrate;
A first sealing resin composed of a first resin composition containing a first curable resin and a first curing agent for sealing between the substrate and the semiconductor element;
A second seal composed of a second resin composition comprising a second curable resin surrounding at least the entire periphery of the semiconductor element and a second curing agent of the same type as the first curing agent. A method of manufacturing a semiconductor device comprising: a sealing resin, sealing with the first sealing resin, and surrounding at least the entire side of the semiconductor element with the second sealing resin,
A first step of filling the uncured first sealing resin between the substrate and the semiconductor element;
A second step of curing the uncured first sealing resin;
A third step of supplying the uncured second sealing resin so as to surround at least the entire periphery of the side portion of the semiconductor element;
And a fourth step of curing the uncured second sealing resin. A method for manufacturing a semiconductor device, comprising: A substrate,
A semiconductor element provided on at least one side of the substrate;
A first sealing resin composed of a first resin composition containing a first curable resin and a first curing agent for sealing between the substrate and the semiconductor element;
A second seal composed of a second resin composition comprising a second curable resin surrounding at least the entire periphery of the semiconductor element and a second curing agent of the same type as the first curing agent. A method of manufacturing a semiconductor device comprising: a sealing resin, sealing with the first sealing resin, and surrounding at least the entire side of the semiconductor element with the second sealing resin,
A first step of filling the uncured first sealing resin between the substrate and the semiconductor element;
A second step of setting the uncured first sealing resin to a semi-cured or higher cured state;
A third step of supplying the uncured second sealing resin so as to surround at least the entire periphery of the side portion of the semiconductor element;
A method of manufacturing a semiconductor device, comprising: a fourth step of curing the first sealing resin that has not reached a completely cured state and the uncured second sealing resin.

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