JP2005026251A - Method of bonding semiconductor connecting coaxial bonding wire - Google Patents

Method of bonding semiconductor connecting coaxial bonding wire Download PDF

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Publication number
JP2005026251A
JP2005026251A JP2003186623A JP2003186623A JP2005026251A JP 2005026251 A JP2005026251 A JP 2005026251A JP 2003186623 A JP2003186623 A JP 2003186623A JP 2003186623 A JP2003186623 A JP 2003186623A JP 2005026251 A JP2005026251 A JP 2005026251A
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Japan
Prior art keywords
bonding
wire
coaxial
bonding wire
electrode
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Application number
JP2003186623A
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Japanese (ja)
Inventor
Toshinori Kogashiwa
俊典 小柏
Masahiro Aoyanagi
昌宏 青柳
Hiroshi Nakagawa
博 仲川
Katsuya Kikuchi
克弥 菊地
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Tanaka Kikinzoku Kogyo KK
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Tanaka Kikinzoku Kogyo KK
National Institute of Advanced Industrial Science and Technology AIST
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Application filed by Tanaka Kikinzoku Kogyo KK, National Institute of Advanced Industrial Science and Technology AIST filed Critical Tanaka Kikinzoku Kogyo KK
Priority to JP2003186623A priority Critical patent/JP2005026251A/en
Publication of JP2005026251A publication Critical patent/JP2005026251A/en
Pending legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of bonding semiconductor connecting coaxial bonding wire by which the coaxial bonding wire of a semiconductor device obtained by coating a conductive wire with an insulating layer and a conductor layer can be bonded more easily to an electrode. <P>SOLUTION: After the coaxial bonding wire 10 is set on a bonding tool 20, an electric torch 21 is disposed to face the wire 10, and arcs 22 are generated between the wire 10 and the torch 21. Then, after the conductive wire 11 is exposed by removing the metallic conductor layer and insulating layer 12 by causing arc discharge, the conductive wire 11 of the coaxial boding wire 10 is bonded to the electrode 31 provided on a semiconductor chip 30 by wedge bonding while the conductive wire 11 is brought into contact with the electrode 31 by means of the bonding tool 20. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体チップ上の電極に導電ワイヤーをウェッジボンディングする方法に関する。
【０００２】
【従来の技術】
近年の半導体装置においては、電磁ノイズの影響を考慮して図３のように導電ワイヤーに被覆を施す場合がある。この被覆は、金属導体からなる導電ワイヤー１１を絶縁層１２で被覆し、更に、これらを金属導体層１３で被覆するという多層構造のものである。ここで、金属導体層１３は、外部からの電磁ノイズの電磁シールドとして機能するものであり、アルミニウム合金、金合金等よりなるものが一般的である。また、絶縁層は、金属導体層１３と導電ワイヤー１１とを絶縁するためのものであるが、酸化ケイ素の他、各種樹脂等の絶縁性材料よりなる。
【０００３】
従来の導電ワイヤーの接合及びその被覆の手法としては、まず、導電ワイヤーを電極３１に接合した後に電極ごと被覆することが多い。また、導電ワイヤーの接合方法については、ろう付け法も適用できるが、より微小な接合部を形成するために、超音波振動を印加することにより摩擦圧接をおこなうウェッジボンディング法が適用されることが多い。そして、導電ワイヤーと電極とを接合後、ＣＶＤ法、スパッタ法等の薄膜形成技術により絶縁層及び金属導体層を順次形成して被覆を行っている。
【０００４】
【特許文献１】特開平６−１２０２８６号公報
【０００５】
しかしながら、かかる被覆工程を経た手法では、工程増のため製造コストの上昇の原因となる。また、影となる部分への被覆が困難となり、品質的にも安定的ではない。
【０００６】
これに対する他の方法としては、予め導電ワイヤーに絶縁層、導電体層の被覆がなされ、同軸構造を有する同軸ボンディングワイヤーを用いる方法がある。特許文献２は、同軸構造を有する半導体接続用同軸ボンディングワイヤーを開示するものである。
【０００７】
【特許文献２】特開平５−２１１１９４号公報
【０００８】
この同軸ボンディングワイヤーの適用は、ワイヤー被覆の不均一さを防止する上では有効なものである。しかしながら、この同軸ボンディングワイヤーを用いる方法についても問題がある。即ち、かかる同軸ボンディングワイヤーを適用する場合には接合前に、いわゆる「皮むき」を行う必要があるため、予め適宜の切断装置を用いて同軸ボンディングワイヤー先端の金属導体層、又は、金属導体層及び絶縁層を除去した後接合工程に供することとなるために、作業が煩雑となる。
【０００９】
【発明が解決しようとする課題】
そこで、本発明では、同軸ボンディングワイヤーを適用しつつ、より簡便な方法で接合が可能な方法を提供することを目的とした。
【００１０】
【課題を解決するための手段】
本発明者等は、鋭意検討を行ない、同軸ボンディングワイヤー先端部の金属導体層、又は、金属導体層及び絶縁層を溶融させて除去することによりより接合工程を簡易にできると考えた。そして、同軸ボンディングワイヤーの最外層を導電性金属で形成していることに着目し、同軸ボンディングワイヤー先端部の金属導体層、又は、金属導体層及び絶縁層を溶融させるための手法として、アーク放電による溶融除去に想到し本発明を完成させた。
【００１１】
即ち、本発明は、金属導体からなる導電ワイヤー、該導電ワイヤーを被覆する絶縁層、該絶縁層を更に被覆する金属導体層からなる同軸ボンディングワイヤーを、半導体基板上の電極上にウェッジボンディング法により接合する方法であって、同軸ボンディングワイヤー先端部に電極トーチを対向配置し、前記同軸ボンディングワイヤー先端部と電極トーチとの間にアークを発生させ、前記同軸ボンディングワイヤーの先端部の金属導体層、又は、金属導体層及び絶縁層を溶融、除去させた後、ウェッジボンディングする半導体接続用同軸ボンディングワイヤーのボンディング方法である。
【００１２】
ここで、本発明において溶融による金属導体層等の除去を行なうこととしたのは、皮むきのように切断による物理的な除去よりも短時間で除去が可能であることによる。また、溶融をアーク放電により行なうこととしたのは、その装置としては、電気トーチ（電極）と外部電極のみであり、ボンディング装置内への組み込みが可能であり、同軸ボンディングワイヤー先端部の溶融と接合とを連続的に行なうことができ効率的な接合が可能であることに着目したことによる。更に、電流条件によりアークの状態を制御することができるため、溶融させる金属導体層等の溶融量を調整することができる点にも着目したことによる。
【００１３】
本発明に係る方法につき、その工程を詳細に説明すると図１のようになる。図１（ａ）は、接合前の同軸ボンディングワイヤーの外観図である。この同軸ボンディングワイヤーは、芯材となる導電ワイヤー１１と、最外層の金属導体層１２と、両者を絶縁する絶縁層１３とからなる。
【００１４】
接合に際しては、まず、この同軸ボンディングワイヤー１０をボンディングツール２０にセットする（図１（ｂ））。尚、図１のボンディングツール２０は、同軸ボンディングワイヤー１０を貫通させこれを固定することができるようになっているが、本発明はこのような形状のボンディングツールに特に限定するものではない。接合する電極面に当接し、超音波振動の印加面を備えるものであれば良い。但し、図１のボンディングツールのように、ボンディングツールと同軸ボンディングワイヤーとの接触を考慮すれば、ボンディングツールは絶縁材料よりなるものが好ましい。本発明でボンディングツールとして、利用可能な絶縁材料としては、例えば、アルミナ、ルビー等が挙げられる。
【００１５】
同軸ボンディングワイヤーのセットが完了したら、電気トーチ２１を同軸ボンディングワイヤーに対向するように配置する（図１（ｃ））。電気トーチ２１は図示せぬ給電装置に接続されている。また、同軸ボンディングワイヤーも給電装置と通電しており、例えば、同軸ボンディングワイヤーの供給のためのクランパーと給電装置とを通電接続することにより、同軸ボンディングワイヤーに通電できるようにする。そして、同軸ボンディングワイヤー１０と電気トーチ２１との間にアーク２２を生じさせる。この際の放電条件としては、同軸ボンディングワイヤーの金属導体層の厚さにもよるが、電圧１５００〜２５００Ｖ、電流１０〜３００ｍＡとし、時間を１．０〜３０ｍｓｅｃの範囲が好ましい。
【００１６】
アーク放電により、金属導体層が溶融するが、この際の放電条件によっては、金属導体層のみを溶融させることもできるが、金属導体層の溶融時の熱を利用して絶縁体層も同時に溶融させることも可能である。金属導体層のみを溶融させ絶縁層を残留させても、電極へウェッジボンディングする際には、印加した超音波振動により絶縁層は剥離するため接合に不都合は生じない。但し、絶縁層剥離の際に生じるスラッジが電極上に残留する場合があることを考慮すれば、絶縁層も溶融除去した方が好ましいといえる。尚、溶融した金属導体層は表面張力により同軸ボンディングワイヤーの未溶融の金属導体層部分に巻き込まれ、電極、半導体チップへの落下は生じない。
【００１７】
アーク放電により導電ワイヤー１１を露出させた後（図１（ｄ））、電気トーチ２１を退去させ、そのまま同軸ボンディングワイヤー１０の導電ワイヤー１１をボンディングツール２０により半導体チップ３０上の電極３１に当接する。そして、超音波振動を印加しつつ押圧することにより接合が完了する。このボンディングの際は室温下で行っても良いが、昇温下（１５０〜２５０℃）でボンディングした方が接合強度を向上させることができる。
【００１８】
以上の工程により、電極上に同軸ボンディングワイヤーを接合することができ、これらを繰り返すことにより複数箇所の接合が可能となる。
【００１９】
【発明の実施の形態】
以下、本発明の好適な実施形態を説明する。
【００２０】
本実施形態では、まず、同軸ボンディングワイヤーを製造した。直径１．００ｍｍの金線（４Ｎ）の表面にフッ素樹脂膜を厚さ０．２ｍｍ形成した。フッ素樹脂膜は、４００℃に加熱した炉内で金線に樹脂粉末を吹きつけることにより形成した。そして、フッ素樹脂膜で被覆した金線を内径１．４ｍｍ、外径２．０ｍｍの金−５重量％銀合金からなるパイプに挿入して素線とした。次に、この素線につき、ドローベンチによる伸線と２００℃の熱処理とを数回繰り返し、外径６０μｍとなったところでボンディング用同軸ボンディングワイヤーとした。
【００２１】
このときの同軸ボンディングワイヤーを断面観察したところ、中心の導電ワイヤーの直径は３０μｍ、絶縁層であるフッ素樹脂膜の厚さは約５μｍであった。
【００２２】
このようにして製造した同軸ボンディングワイヤーを用いて半導体チップ上の電極（アルミニウム電極）への接合を行った。このときのウエッジボンディングツールは、形状は図１のものと同じであり、材質はアルミナ製のものを用いた。接合手順は、図１に関して説明した工程と同様である。本実施形態においてアーク放電条件は、電圧２１００Ｖ、電流を１００ｍＡ、放電時間５ｍｓｅｃとした。放電の結果、最外層の金属導電層、絶縁層が溶解、除去され導電ワイヤーが露出したところで、導電ワイヤーを電極上にボンディングツールで押圧し、同時に超音波を印加して接合を完了した。接合面に欠陥はなく、また、接合強度も十分なものであった。
【００２３】
本実施形態では、図２のように、同軸ボンディングワイヤー１０と電極３１とを接合後、更に、電極３１及び露出した導電ワイヤー１１を絶縁樹脂４０で被覆し、絶縁樹脂４０を更に金属ペースト４１で被覆し、金属導体層１３と半導体基板上のグランド３２とを電気的に接続した。これにより、同軸ボンディングワイヤー１０の受けるノイズによる電気信号をグラウンド３２へアースし、電極３１へのノイズ浸入をより確実に抑制している。
【００２４】
【発明の効果】
以上説明したように、本発明によれば、導電ワイヤーに絶縁層、金属導体層を被覆した同軸ボンディングワイヤーを電極に接合する際に、皮むき工程を経ることなく直接的に接合することができ、効率的なボンディングが可能となる。また、本発明によれば、予め被覆がなされたワイヤーを接合することから、ワイヤーの被覆の不均一さもなく良好な品質の半導体装置を製造することができる。
【図面の簡単な説明】
【図１】本発明に係るボンディング方法の工程の概略を説明する図。
【図２】本実施形態で行った、電極及び導電ワイヤーの被覆工程を示す図。
【図３】従来の半導体装置ボンディング部分の構成を示す図。
【符号の説明】
１０ 同軸ボンディングワイヤー
１１ 導電ワイヤー
１２ 絶縁層
１３ 金属導体層
２０ ウエッジングボンディングツール
２１ 電気トーチ
２２ アーク
３０ 半導体チップ
３１ 電極
３２ グランド
４０ 絶縁樹脂
４１ 金属ペースト[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of wedge bonding a conductive wire to an electrode on a semiconductor chip.
[0002]
[Prior art]
In recent semiconductor devices, a conductive wire may be coated as shown in FIG. 3 in consideration of the influence of electromagnetic noise. This coating has a multilayer structure in which a conductive wire 11 made of a metal conductor is covered with an insulating layer 12 and further covered with a metal conductor layer 13. Here, the metal conductor layer 13 functions as an electromagnetic shield against electromagnetic noise from the outside, and is generally made of an aluminum alloy, a gold alloy, or the like. Moreover, although an insulating layer is for insulating the metal conductor layer 13 and the conductive wire 11, it consists of insulating materials, such as various resin other than a silicon oxide.
[0003]
As a conventional method for joining and covering the conductive wires, first, the conductive wires are often joined to the electrodes 31 and then covered together with the electrodes. In addition, as a method for bonding conductive wires, a brazing method can be applied, but in order to form a finer bonded portion, a wedge bonding method in which friction welding is performed by applying ultrasonic vibration may be applied. Many. And after joining a conductive wire and an electrode, it coat | covers by forming an insulating layer and a metal conductor layer one by one by thin film formation techniques, such as CVD method and a sputtering method.
[0004]
[Patent Document 1] Japanese Patent Laid-Open No. 6-120286
However, the technique that has undergone such a coating process causes an increase in manufacturing cost due to an increase in the number of processes. Further, it is difficult to cover the shadowed portion, and the quality is not stable.
[0006]
As another method for this, there is a method of using a coaxial bonding wire having a coaxial structure in which a conductive wire is previously coated with an insulating layer and a conductive layer. Patent Document 2 discloses a coaxial bonding wire for semiconductor connection having a coaxial structure.
[0007]
[Patent Document 2] Japanese Patent Laid-Open No. 5-21194
The application of the coaxial bonding wire is effective in preventing non-uniformity of the wire coating. However, there is a problem with the method using this coaxial bonding wire. That is, when such a coaxial bonding wire is applied, it is necessary to perform so-called “peeling” before joining. Therefore, a metal conductor layer at the tip of the coaxial bonding wire or a metal conductor layer using an appropriate cutting device in advance. And since it will use for a joining process after removing an insulating layer, work will become complicated.
[0009]
[Problems to be solved by the invention]
Accordingly, an object of the present invention is to provide a method capable of joining by a simpler method while applying a coaxial bonding wire.
[0010]
[Means for Solving the Problems]
The present inventors have conducted intensive studies and thought that the joining process can be simplified by melting and removing the metal conductor layer or the metal conductor layer and the insulating layer at the tip of the coaxial bonding wire. Focusing on the fact that the outermost layer of the coaxial bonding wire is formed of a conductive metal, arc discharge as a technique for melting the metal conductor layer at the tip of the coaxial bonding wire, or the metal conductor layer and the insulating layer. As a result, the present invention was completed.
[0011]
That is, the present invention provides a conductive wire made of a metal conductor, an insulating layer covering the conductive wire, and a coaxial bonding wire made of a metal conductor layer further covering the insulating layer by a wedge bonding method on an electrode on a semiconductor substrate. A method of bonding, wherein an electrode torch is disposed opposite to a coaxial bonding wire tip, an arc is generated between the coaxial bonding wire tip and the electrode torch, and a metal conductor layer at a tip of the coaxial bonding wire, Or it is the bonding method of the coaxial bonding wire for semiconductor connection which carries out wedge bonding, after melting and removing a metal conductor layer and an insulating layer.
[0012]
Here, the reason why the metal conductor layer or the like is removed by melting in the present invention is that the removal can be performed in a shorter time than the physical removal by cutting, such as peeling. In addition, it was decided that the melting was performed by arc discharge only as an electric torch (electrode) and an external electrode, which can be incorporated into the bonding apparatus, This is due to the fact that the joining can be performed continuously and efficient joining is possible. Furthermore, since the state of the arc can be controlled according to the current condition, it is because the amount of melting of the metal conductor layer to be melted can be adjusted.
[0013]
The process according to the present invention will be described in detail as shown in FIG. Fig.1 (a) is an external view of the coaxial bonding wire before joining. The coaxial bonding wire includes a conductive wire 11 serving as a core material, an outermost metal conductor layer 12, and an insulating layer 13 that insulates both.
[0014]
In joining, first, the coaxial bonding wire 10 is set on the bonding tool 20 (FIG. 1B). 1 can pass the coaxial bonding wire 10 and fix it, the present invention is not particularly limited to such a bonding tool. What is necessary is just to contact | abut to the electrode surface to join and to provide the application surface of an ultrasonic vibration. However, considering the contact between the bonding tool and the coaxial bonding wire as in the bonding tool of FIG. 1, the bonding tool is preferably made of an insulating material. Examples of the insulating material that can be used as the bonding tool in the present invention include alumina and ruby.
[0015]
When the setting of the coaxial bonding wire is completed, the electric torch 21 is disposed so as to face the coaxial bonding wire (FIG. 1C). The electric torch 21 is connected to a power supply device (not shown). The coaxial bonding wire is also energized with the power feeding device. For example, the coaxial bonding wire can be energized by energizing and connecting a clamper for supplying the coaxial bonding wire and the power feeding device. Then, an arc 22 is generated between the coaxial bonding wire 10 and the electric torch 21. As discharge conditions at this time, although depending on the thickness of the metal conductor layer of the coaxial bonding wire, a voltage of 1500 to 2500 V, a current of 10 to 300 mA, and a time of 1.0 to 30 msec are preferable.
[0016]
Although the metal conductor layer is melted by arc discharge, depending on the discharge conditions, only the metal conductor layer can be melted, but the insulator layer is also melted at the same time using the heat generated when the metal conductor layer is melted. It is also possible to make it. Even when only the metal conductor layer is melted and the insulating layer is left, when the wedge bonding is performed to the electrode, the insulating layer is peeled off by the applied ultrasonic vibration, so that there is no inconvenience in bonding. However, it can be said that the insulating layer is preferably melted and removed in consideration of the fact that sludge generated when the insulating layer is peeled may remain on the electrode. The molten metal conductor layer is wound around the unmelted metal conductor layer portion of the coaxial bonding wire due to surface tension, and does not drop onto the electrode or the semiconductor chip.
[0017]
After the conductive wire 11 is exposed by arc discharge (FIG. 1D), the electric torch 21 is withdrawn, and the conductive wire 11 of the coaxial bonding wire 10 is brought into contact with the electrode 31 on the semiconductor chip 30 by the bonding tool 20 as it is. . And joining is completed by pressing, applying an ultrasonic vibration. The bonding may be performed at room temperature, but bonding strength can be improved by bonding at a high temperature (150 to 250 ° C.).
[0018]
Through the above steps, a coaxial bonding wire can be bonded onto the electrode, and by repeating these steps, a plurality of points can be bonded.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described.
[0020]
In this embodiment, first, a coaxial bonding wire was manufactured. A fluororesin film having a thickness of 0.2 mm was formed on the surface of a gold wire (4N) having a diameter of 1.00 mm. The fluororesin film was formed by spraying resin powder on a gold wire in a furnace heated to 400 ° C. Then, a gold wire covered with a fluororesin film was inserted into a pipe made of a gold-5 wt% silver alloy having an inner diameter of 1.4 mm and an outer diameter of 2.0 mm to obtain a strand. Next, with respect to this strand, drawing with a draw bench and heat treatment at 200 ° C. were repeated several times, and a coaxial bonding wire for bonding was formed when the outer diameter reached 60 μm.
[0021]
When the cross section of the coaxial bonding wire at this time was observed, the diameter of the central conductive wire was 30 μm, and the thickness of the fluororesin film as the insulating layer was about 5 μm.
[0022]
The coaxial bonding wire thus manufactured was used for bonding to an electrode (aluminum electrode) on the semiconductor chip. The wedge bonding tool at this time has the same shape as that shown in FIG. 1 and is made of alumina. The joining procedure is the same as that described with reference to FIG. In this embodiment, the arc discharge conditions are a voltage of 2100 V, a current of 100 mA, and a discharge time of 5 msec. As a result of the discharge, when the outermost metal conductive layer and insulating layer were dissolved and removed and the conductive wire was exposed, the conductive wire was pressed onto the electrode with a bonding tool, and at the same time, ultrasonic waves were applied to complete the bonding. There were no defects on the bonding surface, and the bonding strength was sufficient.
[0023]
In this embodiment, as shown in FIG. 2, after the coaxial bonding wire 10 and the electrode 31 are joined, the electrode 31 and the exposed conductive wire 11 are further covered with the insulating resin 40, and the insulating resin 40 is further covered with the metal paste 41. The metal conductor layer 13 and the ground 32 on the semiconductor substrate were electrically connected. Thereby, the electric signal due to the noise received by the coaxial bonding wire 10 is grounded to the ground 32, and noise intrusion to the electrode 31 is more reliably suppressed.
[0024]
【The invention's effect】
As described above, according to the present invention, when a coaxial bonding wire covering a conductive wire with an insulating layer and a metal conductor layer is bonded to an electrode, it can be directly bonded without passing through a peeling process. Efficient bonding is possible. Further, according to the present invention, since the wires that have been coated in advance are joined, a semiconductor device of good quality can be manufactured without non-uniformity of the coating of the wires.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining the outline of the steps of a bonding method according to the present invention.
FIG. 2 is a view showing an electrode and conductive wire coating process performed in the present embodiment.
FIG. 3 is a diagram showing a configuration of a conventional semiconductor device bonding portion.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Coaxial bonding wire 11 Conductive wire 12 Insulating layer 13 Metal conductor layer 20 Wedge bonding tool 21 Electric torch 22 Arc 30 Semiconductor chip 31 Electrode 32 Ground 40 Insulating resin 41 Metal paste

Claims (4)

金属導体からなる導電ワイヤー、該導電ワイヤーを被覆する絶縁層、該絶縁層を更に被覆する金属導体層からなる同軸ボンディングワイヤーを、半導体基板上の電極上にウェッジボンディング法により接合する方法であって、
同軸ボンディングワイヤー先端部に電極トーチを対向配置し、前記同軸ボンディングワイヤー先端部と電極トーチとの間にアークを発生させ、前記同軸ボンディングワイヤーの先端部の金属導体層、又は、金属導体層及び絶縁層を溶融、除去させた後、ウェッジボンディングする半導体接続用同軸ボンディングワイヤーのボンディング方法。A method of joining a conductive wire made of a metal conductor, an insulating layer covering the conductive wire, and a coaxial bonding wire made of a metal conductor layer further covering the insulating layer on an electrode on a semiconductor substrate by a wedge bonding method. ,
An electrode torch is disposed opposite to the coaxial bonding wire tip, an arc is generated between the coaxial bonding wire tip and the electrode torch, and the metal conductor layer at the tip of the coaxial bonding wire, or the metal conductor layer and insulation A bonding method of a coaxial bonding wire for semiconductor connection in which a layer is melted and removed and then wedge-bonded. 金属導体層の溶融時の熱により絶縁層を溶融、除去する請求項１記載の半導体接続用同軸ボンディングワイヤーのボンディング方法。The bonding method of a coaxial bonding wire for semiconductor connection according to claim 1, wherein the insulating layer is melted and removed by heat at the time of melting the metal conductor layer. ボンディングツールが絶縁体よりなる請求項１又は請求項２のいずれか１項に記載の半導体接続用同軸ボンディングワイヤーのボンディング方法。The method for bonding a coaxial bonding wire for semiconductor connection according to claim 1, wherein the bonding tool is made of an insulator. 同軸ボンディングワイヤーと電極とを接合後、電極及び導電ワイヤーの露出部分を絶縁樹脂で被覆し、前記絶縁樹脂を更に金属ペーストで被覆し、同軸ボンディングワイヤーの金属導体層と半導体基板上のグランドとを電気的に接続する請求項１〜請求項３のいずれか１項に記載の半導体接続用同軸ボンディングワイヤーのボンディング方法。After bonding the coaxial bonding wire and the electrode, the exposed portions of the electrode and the conductive wire are covered with an insulating resin, the insulating resin is further covered with a metal paste, and the metal conductor layer of the coaxial bonding wire and the ground on the semiconductor substrate are bonded. The bonding method of the coaxial bonding wire for semiconductor connection according to any one of claims 1 to 3, wherein the connection is electrically performed.
JP2003186623A 2003-06-30 2003-06-30 Method of bonding semiconductor connecting coaxial bonding wire Pending JP2005026251A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019104297A1 (en) * 2017-11-27 2019-05-31 Lewis Peter Houghton Method of micro-coaxial wire bonding and corresponding apparatus
WO2019236551A3 (en) * 2018-06-04 2020-01-16 Meinhold Mitchell W Apparatus and method for wire preparation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019104297A1 (en) * 2017-11-27 2019-05-31 Lewis Peter Houghton Method of micro-coaxial wire bonding and corresponding apparatus
WO2019236551A3 (en) * 2018-06-04 2020-01-16 Meinhold Mitchell W Apparatus and method for wire preparation

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