JP2005019926A - Resin-sealing apparatus and semiconductor device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin-sealing apparatus which can sufficiently seal a comparatively large area with resin without increasing the manufacture cost considerably and to provide its semiconductor device manufacturing method. <P>SOLUTION: The resin-sealing apparatus includes a lower mold 103 facing on a circuit forming surface of a semiconductor wafer 109. A plated layer with amorphous organic fluorine is formed on the surface of the lower mold 103. The releasability between the semiconductor wafer 109 and the lower mold 103 after resin-sealing is improved by the existence of the plated layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a technique for sealing a semiconductor wafer on which a plurality of semiconductor elements are formed with a resin in the wafer state.
[0002]
[Prior art]
With the miniaturization of portable devices, miniaturization of semiconductor devices mounted on portable devices is required. In order to meet this demand, a semiconductor device called a chip size package has appeared that has substantially the same external dimensions as semiconductor chips. As one form of the chip size package, there is a semiconductor device called a wafer level chip size package or a wafer level chip scale package.
[0003]
Resin sealing in such a wafer level chip size package (hereinafter referred to as WCSP) is performed in a wafer state before each semiconductor element is separated.
For example, the following documents exist as related technologies that disclose the resin sealing process of WCSP. (For example, see Patent Document 1 and Non-Patent Document 1.)
[0004]
[Patent Document 1]
JP 2003-45906 A [Non-Patent Document 1]
Tatsuyoshi Yamaguchi “Molding Technology for Wafer CSP” Electronic Materials March 2001 114-P. 117
[0005]
[Problems to be solved by the invention]
However, since the adhesive strength between the cured sealing resin and the mold material is relatively strong, it is difficult to release the semiconductor wafer on which the sealing resin is formed from the mold. Therefore, when separating the semiconductor wafer from the mold, the sealing resin may be peeled off from the wafer surface or the sealing resin may be cracked. The above problem is a problem specific to WCSP, which is a target to be resin-sealed, and has a relatively large surface area of the semiconductor wafer.
In order to solve this problem, that is, in order to facilitate the release of the semiconductor wafer from the mold, it has been proposed to employ a release film as described in Non-Patent Document 1 above.
[0006]
However, if a release film is employed, the manufacturing cost is inevitably increased, and this is not preferable in view of cost. Furthermore, since a flame retardant material is used as the current release film, it is still not preferable in consideration of the environmental impact.
Therefore, there has been a demand for a method of manufacturing a semiconductor device that can satisfactorily encapsulate a relatively large area without significantly increasing the manufacturing cost.
[0007]
[Means for Solving the Problems]
The present invention has been devised to overcome the above problems. Among the inventions disclosed in the present application, an outline of a typical method for manufacturing a semiconductor device is as follows.
That is, a step of preparing a semiconductor element having a main surface on which a circuit element is formed, a step of preparing a sealing mold having a surface on which a plating layer containing amorphous organic fluorine is formed, A step of facing the surface and the surface of the sealing mold, a step of introducing a sealing resin into a space formed by the main surface of the semiconductor element and the sealing mold, and a step of separating the sealing mold and the semiconductor element A method for manufacturing a semiconductor device, comprising:
[0008]
Moreover, the outline | summary of a typical resin sealing apparatus among the invention disclosed in this application is as follows.
That is, in a resin sealing device having a sealing type in which a semiconductor element having a main surface on which a circuit element is formed is disposed, an amorphous organic fluorine is provided on the sealing type surface facing the main surface of the semiconductor element. The resin sealing device is characterized in that a plating layer containing is formed.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment)
1 to 4 show a resin sealing process for a semiconductor wafer according to an embodiment of the present invention.
In FIG. 1, a resin sealing device for manufacturing a semiconductor device includes an upper mold 101 and a lower mold. The lower mold has a lower mold 103, a lower mold 105, and a plunger 107.
[0010]
Steel materials are mainly used as the mold base material. The surface of the steel material of the lower mold 103 in the present embodiment, that is, the surface of the steel material of the lower mold 103 in contact with the molten resin (sealing resin) is such that the surface roughness Rz = 8 to 14 micrometers. Uneven processing is applied. Further, the surface of the steel material of the lower mold 103 subjected to the uneven treatment is plated with chromium to which amorphous (amorphous) organic fluorine is added.
[0011]
A space surrounded by the lower molds 103 and 105 and the surface of the semiconductor wafer 109 is defined as a cavity. Since the plunger 107 is at a position lower than the surface of the lower mold 103 before resin sealing is started, a space is formed between the surface of the plunger 107 and the surface of the lower mold 103. . The resin tablet 113 is put into this space.
In executing the resin sealing step, first, the solid resin tablet 113 is put into this space.
[0012]
Next, the semiconductor wafer 109 is disposed at a position corresponding to the cavity with the circuit formation surface facing downward. That is, the circuit formation surface of the semiconductor wafer 109 faces the upper surface of the lower mold 103. Conductive posts 111 are formed on the surface of the semiconductor wafer 109. The conductive post 111 is electrically connected to a circuit element (not shown) formed on the circuit formation surface of the semiconductor wafer 109.
[0013]
Next, as shown in FIG. 2, the lower molds 103 and 105 are raised, and the semiconductor wafer 109 is held by the upper mold 101 and the lower mold 105. As a result, the entire back surface of the semiconductor wafer 109, that is, the surface opposite to the surface on which the circuit elements are formed, is substantially in close contact with the upper mold 101. The periphery of the surface of the semiconductor wafer 109, that is, the periphery of the circuit formation surface on which the circuit elements are formed is in close contact with the lower mold 105.
In this state, the upper mold 101 and the lower molds 103 and 105 are heated to a temperature at which the resin tablet 113 is melted, and the resin tablet 113 is melted.
Subsequently, the plunger 107 is raised and filling of the molten resin into the cavity is started.
[0014]
Thereafter, as shown in FIG. 3, the molten resin is filled into the cavity, and the resin is held at a predetermined pressure by the plunger 107. The resin is cured when a predetermined time elapses after melting. A predetermined pressure is applied to the resin by the plunger 107 until it is cured.
[0015]
Next, as shown in FIG. 4, the lower molds 103 and 105 are lowered. At this time, the semiconductor wafer 109 whose surface is sealed with resin moves away from the upper mold 101 and moves down together with the lower molds 103 and 105. Thereafter, the resin-sealed semiconductor wafer 109 is separated from the lower mold 103 by an ejector bin (not shown). At this time, since the surface of the lower mold 103 that comes into contact with the molten resin (sealing resin) is subjected to a plating treatment containing fluorine having water repellent action, the semiconductor wafer 109 can be easily removed from the lower mold 103. Is released. Since the fluorine added in the plating process is amorphous organic fluorine, the releasability of the semiconductor wafer 109 from the lower mold 103 is better than that in which simple fluorine is added.
[0016]
Further, the surface of the lower mold 103 that comes into contact with the molten resin (sealing resin) is subjected to unevenness treatment so that the surface roughness Rz = 8 to 14 micrometers. For this reason, in the process in which the resin is filled in the cavity, a little air layer remains in the recess. Even when the pressure by the plunger 107 is applied to the resin, an extremely thin air layer remains in the recess. Therefore, since the contact area between the resin and the lower mold 103 is substantially reduced, the releasability of the semiconductor wafer 109 from the lower mold 103 is further improved.
[0017]
Subsequently, the resin-sealed semiconductor wafer 109 is taken out of the mold, and the resin is polished by a predetermined thickness to expose the tops of the conductive posts on each semiconductor element. Thereafter, external terminals are formed on the exposed conductive posts. Subsequently, a plurality of packages (WCSP) are obtained by separating a plurality of semiconductor elements formed on the semiconductor wafer 109 into individual pieces.
[0018]
【The invention's effect】
Among the inventions disclosed in the present application, the effects of typical inventions will be briefly described as follows.
That is, according to the method for manufacturing a semiconductor device of the present invention, the surface of the sealing mold (mold) in contact with the sealing resin is subjected to a plating treatment containing fluorine having a water repellent effect. The semiconductor element is easily released from the sealing mold (mold). In addition, since the fluorine added in the plating process is amorphous organic fluorine, the releasability of the semiconductor element from the sealing mold (mold) is better than that with mere fluorine added. .
[0019]
Furthermore, the surface of the sealing mold (mold) that comes into contact with the sealing resin has been subjected to uneven processing so that the surface roughness Rz = 8 to 14 micrometers, so that an extremely thin air layer remains in the recess. To do. Therefore, since the contact area between the resin and the sealing mold (mold) is substantially reduced, the releasability of the semiconductor element from the sealing mold (mold) is further improved.
As a result, according to the present invention, it is possible to provide a method of manufacturing a semiconductor device that can satisfactorily encapsulate a relatively large area without significantly increasing the manufacturing cost.
[Brief description of the drawings]
FIG. 1 is a manufacturing process diagram for explaining an embodiment of the present invention;
FIG. 2 is a manufacturing process diagram illustrating an embodiment of the present invention.
FIG. 3 is a manufacturing process diagram illustrating an embodiment of the present invention.
FIG. 4 is a manufacturing process diagram illustrating an embodiment of the present invention.
[Explanation of symbols]
101 ... Upper mold 103 ... Lower mold 105 ... Lower mold 109 ... Semiconductor wafer 111 ... Conductive post 113 ... Resin tablet

Claims (10)

Preparing a semiconductor element having a main surface on which circuit elements are formed;
Preparing a sealing mold having a surface on which a plating layer containing amorphous organic fluorine is formed;
A step of facing the main surface of the semiconductor element and the surface of the sealing mold;
Introducing a sealing resin into a space constituted by the main surface of the semiconductor element and the sealing mold;
A method for manufacturing a semiconductor device, comprising: a step of separating the sealing mold and the semiconductor element. 2. The method of manufacturing a semiconductor device according to claim 1, wherein a surface roughness Rz of the surface of the sealing mold is in a range of 8 micrometers to 14 micrometers. Preparing a semiconductor element having a main surface on which circuit elements are formed;
Preparing a sealing mold having a surface with a surface roughness Rz in the range of 8 micrometers to 14 micrometers;
A step of facing the main surface of the semiconductor element and the surface of the sealing mold;
Introducing a sealing resin into a space constituted by the main surface of the semiconductor element and the sealing mold;
A method for manufacturing a semiconductor device, comprising: a step of separating the sealing mold and the semiconductor element. 2. The method of manufacturing a semiconductor device according to claim 1, wherein a plating layer containing amorphous organic fluorine is formed on the surface of the sealing mold. In a resin sealing apparatus having a sealing type in which a semiconductor element having a main surface on which a circuit element is formed is disposed, amorphous organic fluorine is applied to the surface of the sealing type facing the main surface of the semiconductor element. A resin sealing device comprising a plating layer including the resin sealing device. 6. The resin sealing device according to claim 5, wherein a surface roughness Rz of the surface of the sealing mold facing the main surface of the semiconductor element is in a range of 8 micrometers to 14 micrometers. Preparing a semiconductor wafer having a plurality of semiconductor elements;
Preparing a sealing mold having a surface on which a plating layer containing amorphous organic fluorine is formed;
A step of facing the main surface of the semiconductor wafer and the surface of the sealing mold;
Introducing a sealing resin into a space constituted by the main surface of the semiconductor wafer and the sealing mold;
Separating the sealing mold and the semiconductor wafer;
And a step of dividing the semiconductor wafer sealed with the resin into a plurality of the semiconductor elements. 8. The method of manufacturing a semiconductor device according to claim 7, wherein a surface roughness Rz of the surface of the sealing mold is in a range of 8 micrometers to 14 micrometers. Preparing a semiconductor wafer having a plurality of semiconductor elements;
Preparing a sealing mold having a surface with a surface roughness Rz in the range of 8 micrometers to 14 micrometers;
A step of facing the main surface of the semiconductor wafer and the surface of the sealing mold;
Introducing a sealing resin into a space constituted by the main surface of the semiconductor wafer and the sealing mold;
Separating the sealing mold and the semiconductor wafer;
And a step of dividing the semiconductor wafer sealed with the resin into a plurality of the semiconductor elements. 10. The method of manufacturing a semiconductor device according to claim 9, wherein a plating layer containing amorphous organic fluorine is formed on the surface of the sealing mold.

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