JP2005019709A - Semiconductor laser unit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a new semiconductor laser unit wherein heat dissipation can be improved without changing the outside dimension of an entire unit. <P>SOLUTION: A resin formation part 6 is molded so that each of lead pins 8 may be held by a high-temperature conductive resin while an electrical connection surface is left on the upper and side parts in the parallel lead pins 8, and a heat generation in a laser diode chip 1 is conducted to the respective lead pins 8 from an island 5 through the resin formation part 6. As a result, heat dissipation is made through the island 5 and a plurality of lead pins 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor laser unit on which at least a laser diode chip (hereinafter referred to as an “LD chip”) for a light source is mounted, and mainly reads and writes optical disks such as CDs (Compact Disks) and DVDs (Digital Versatile Disks). The present invention also relates to a semiconductor laser unit that is incorporated in various optical disk application devices and constitutes a pickup.
[0002]
[Prior art]
In recent years, in optical disk application equipment for reading and writing various optical disks such as music CDs and other CD-ROMs and DVDs, a hologram element (HOE) having functions such as beam generation, optical branching, and error signal generation is used as an optical system. A hologram type pickup has been proposed.
This pickup includes a semiconductor laser unit in which an LD chip for a light source and a light receiving member for signal reading are arranged in one package, and a hologram element bonded and fixed to the upper surface of the semiconductor laser unit.
Such a hologram type pickup can achieve various advantages such as reduction in the number of parts, improvement in environmental resistance, etc., enabling reduction in size and weight, price reduction, and high-speed access.
[0003]
On the other hand, the applicant of the present application can immediately respond to the needs for further reduction in size and weight and cost in optical disk application devices such as CD-ROM drives for notebook personal computers, portable CDs for music, and car-mounted players. As a thing, the semiconductor laser unit disclosed by patent document 1 etc. is proposed previously.
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 10-256649 (FIG. 7)
[0005]
As disclosed in FIG. 7 of Patent Document 1, this semiconductor laser unit includes a metal island on which an LD chip, a light receiving member, and the like are mounted, and a pair of left and right resin molded bodies that are fitted to each other with the island interposed therebetween. And a plurality of lead pins which are held in parallel in the vertical direction on each resin molded body and are electrically connected to the laser diode chip by conducting means such as wire bonding. Thus, reduction of the number of parts, simplification of assembly work, miniaturization of the product, cost reduction, etc. can be realized.
[0006]
Further, as disclosed in Patent Document 2, the applicant of the present invention is configured such that the portion that bulges to the island lower surface side of the resin molded portion becomes a socket portion that exposes the electrical connection surface of the side portion of each lead pin. In addition, a semiconductor laser unit that can be easily mounted on a pickup unit and is extremely useful for manufacturing a miniaturized optical disk application device has been proposed.
[0007]
[Patent Document 2]
JP-A-11-233808 (FIGS. 8 and 11)
[0008]
[Problems to be solved by the invention]
In recent years, DVDs with larger capacities than CDs are being widely used as recording media for notebook personal computers and various multimedia devices. However, semiconductor laser units used for reading and writing DVDs have a large laser emission amount. Along with this, the amount of heat generation becomes large, so that a semiconductor laser unit having greater heat dissipation is required.
Improvement of heat dissipation is possible by increasing the island, but if the island's outer dimensions are expanded, the configuration of the pickup section where the semiconductor laser unit is mounted must be changed in accordance with the expansion, At the same time, the internal structure of the product itself must be changed.
Such a change is not practical for multimedia devices and optical disk application devices that are significantly reduced in size, thickness, and weight, and a new semiconductor laser unit that can improve heat dissipation without changing the overall dimensions of the unit. Is strongly demanded.
[0009]
The present invention has been made in view of the above-described conventional circumstances, and an object of the process is mainly a semiconductor laser unit used in a field accompanied by large-capacity laser emission such as writing to an optical recording medium such as a DVD. Then, it is providing the novel semiconductor laser unit which can improve heat dissipation, without changing the external dimension of the whole unit.
[0010]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a metal island on which at least a laser diode chip for a light source is mounted, and conductive means such as wire bonding that are held in parallel in the vertical direction on both left and right sides of the island. A semiconductor laser unit having a plurality of lead pins electrically connected to the laser diode chip, wherein each lead pin is integrated with the island by a resin molding part;
The resin molding part is molded with a high thermal conductive resin so as to hold each lead pin while leaving an electrical connection surface on the upper part and side part of each parallel lead pin,
Heat generation of the laser diode chip is conducted from the island to each lead pin through the resin molding portion, and heat is radiated by the island and the plurality of lead pins (Claim 1).
[0011]
According to such a configuration, in addition to the island, a plurality of lead pins also function as a heat radiating member, so that the external dimensions of the entire unit are not changed as compared with the conventional technology in which heat is radiated only by the island. , Can improve heat dissipation.
Therefore, the socket part protruding from the lower part of the island can easily perform the mounting work on the pickup part, and the effect of the previous proposal by the present applicant that it is extremely useful for manufacturing a miniaturized optical disk application device, etc. is produced as it is, and Since the overall external dimensions of the unit are the same as before, heat dissipation is improved without changing the structure of the pickup unit that mounts the unit and the internal structure of the product itself such as an optical disk application device incorporating the pickup unit. The obtained semiconductor laser unit can be obtained.
[0012]
In the present invention, the resin molded portion is preferably molded from a high thermal conductive resin having a thermal conductivity of 0.4 W / m · K or more.
In the first place, the resin molded part is configured to hold a plurality of lead pins in parallel in the vertical direction on both the left and right sides of the island, and electrically insulate between the island and each lead pin. The resin molded part uses a low thermal conductive resin having a thermal conductivity of about 0.2 to 0.3 W / m · K. With such a configuration, the heat generated by the laser diode chip is not transmitted to each lead pin, Since heat is released only on the island, there is a limit to the heat dissipation function.
On the other hand, in the present invention, a high thermal conductive resin having a thermal conductivity more than double that of the prior art, that is, a thermal conductivity of 0.4 W / m · K or more, is used to electrically connect the island and each lead pin. In addition, the heat of the island was transmitted to each lead pin so that each lead pin also functioned as a heat radiating member, so that the heat dissipation was greatly improved.
[0013]
As a high thermal conductive resin having a thermal conductivity of 0.4 W / m · K or more, as described in claim 3, a synthetic resin material having a thermal deformation temperature of 120 ° C. or higher; 15 to 60 wt%, inorganic filler; 75 to 35 wt%, Reinforcing fiber: A highly heat conductive resin having a composition of 10 to 5 wt% can be mentioned.
[0014]
Various synthetic resins such as nylon, polyamide, polyphthalamide, polycarbonate, polybutylene terephthalate (PBT), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), and liquid crystal polymer are used as synthetic resin materials having a heat distortion temperature of 120 ° C. or higher. Among them, in consideration of the handling property (viscosity) of the resin at the time of molding, cost, etc., nylon resin such as nylon 6, nylon 66, nylon 11, nylon 12, nylon copolymer, MXD6, and PPS resin are used. It can be preferably used.
[0015]
The inorganic filler is an insulating filler for increasing thermal conductivity, and is preferably a powder or granule such as ceramic, glass, natural ore, and preferably has a particle size of 0.5 μm to 5 μm. be able to.
[0016]
The reinforcing fiber is for giving the resin molded part a predetermined strength, and those having a diameter of 1 to 5 μm and a length of 1 to 2 mm such as glass fiber, natural fiber, and synthetic fiber can be preferably used.
[0017]
Further, in the semiconductor laser unit of the present invention, the resin molding portion includes a mode in which a pair of left and right resin moldings that are fitted to each other with an island interposed therebetween are joined and integrated by ultrasonic welding, and the left and right sides of the island. The thing of the aspect integrally molded so that a some lead pin may be hold | maintained in parallel with a perpendicular direction can be used.
[0018]
When using a resin molded part consisting of a pair of left and right resin molded bodies, the left and right resin molded bodies are molded by insert molding etc. so that a plurality of lead pins can be held in parallel, and the left and right resin molded bodies are sandwiched between islands. Since they are joined to each other and integrated by ultrasonic welding, there are advantages such as easy assembly of the semiconductor laser unit.
However, when the left and right resin moldings are molded with a high thermal conductivity resin having a thermal conductivity of more than 0.8 W / m · K, the thermal conductivity is too high and ultrasonic welding is not sufficiently performed. The mechanical strength and reliability may be inferior.
Therefore, when using the resin molding part which consists of a pair of left and right resin moldings, it is preferable to use a high thermal conductivity resin having a thermal conductivity of 0.4 to 0.8 W / m · K.
As such a high thermal conductive resin, a synthetic resin material having a thermal deformation temperature of 120 ° C. or higher; 40-60 wt%, inorganic filler; 50-35 wt%, reinforcing fiber; (Claim 4).
[0019]
On the other hand, when using a resin molded part that is integrally molded so that a plurality of lead pins are held in parallel in a vertical direction on both the left and right sides of the island, the resin molded part is arranged so that a plurality of lead pins are arranged in parallel on the left and right sides of the island. Since it is integrally molded, there is no possibility that the above-mentioned problems occur without using means such as ultrasonic bonding.
Therefore, in this case, a high thermal conductive resin having a thermal conductivity of more than 0.8 W / m · K can be used, and the heat dissipation performance can be further improved.
As such a high thermal conductive resin, a high thermal conductive resin composed of a synthetic resin material having a thermal deformation temperature of 120 ° C. or higher; 15 to 35 wt%, inorganic filler; 75 to 60 wt%, reinforcing fiber; 10 to 5 wt% (Claim 5).
[0020]
The semiconductor laser unit of the present invention includes a laser diode chip for a light source, a mode before mounting elements such as a light receiving member for signal reading (Claims 1 to 5), a laser diode chip, a light receiving member, and the like on an island. And an aspect (Claim 6) in which these elements are mounted.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings.
The semiconductor laser unit A shown in FIGS. 1 and 2 is a unit body whose basic configuration is the same as that of the previous proposal by the applicant of the present application, but the characteristic points of this example will be mainly described below.
[0022]
That is, the semiconductor laser unit A includes a mounting surface 2 for an LD chip (laser diode chip) 1 for a light source, a metal island 5 having a mounting surface 4 for a light receiving element (light receiving member) 3 for reading signals, A resin molded portion 6 composed of a pair of left and right resin molded bodies 6a and 6b that are joined to each other with the island 5 interposed therebetween, and held in parallel in the vertical direction on the resin molded bodies 6a and 6b by wire bonding (conduction means) 7 A plurality of lead pins 8 electrically connected to the LD chip 1 and the light receiving element 3 are covered with a cover (not shown) to protect the LD chip 1, the light receiving element 3, the wire bonding 7 and the like. A hologram element (not shown) is attached to the upper surface of the cover to constitute a hologram type pip-up.
[0023]
The island 5 is formed between the left and right ear portions 51 and 52 and the central portion of these ear portions 51 and 52 by cold casting or the like using a metal material having desired heat dissipation characteristics such as Fe, Al, and Cu. The continuous rectangular portion 53 and the mounting portion 54 protruding from the upper surface of the rectangular portion 53 are integrally molded with high accuracy, and the surface is plated with, for example, Cu, Ni, Au or the like. ing.
[0024]
On the mounting portion 54, the mounting surface 2 of the LD chip 1 is formed on the side surface, and the mounting surface of the light receiving element 3 is formed on the upper surface.
[0025]
The left and right resin molded bodies 6a and 6b constituting the resin molded portion 6 are designed to have a thermal conductivity of 0.4 to 0.00 in consideration of bonding strength when the resin molded bodies 6a and 6b are bonded and integrated by ultrasonic welding. Synthetic resin material with a thermal deformation temperature of 120 ° C. or higher at 8 W / m · K; 40-60 wt%, inorganic filler; 50-35 wt%, reinforced fiber; Has been.
[0026]
The left and right resin moldings 6a and 6b have an electrical connection surface 9a to the wire bonding 7 on the upper part of the parallel lead pins 8 formed on the lead frame, and an electrical connection surface 9b at the time of mounting on the side part. Each of the lead pins 8 is formed so as to be held in parallel. The upper step portions 6a-1 and 6b-1 covering the upper half of each lead pin 8 and the lower half of each lead pin 8 are formed. In addition to the lower steps 6a-2 and 6b-2 to be covered, recesses 6a-3 and 6b-3 that serve as joints between the island 5 and the opposed resin molded bodies 6a and 6b are provided on the inner surface side. It is integrally molded.
[0027]
The lower step portions 6a-2 and 6b-2 of the resin molded bodies 6a and 6b are formed so as to cover the lower half portions of the lead pins 8 while leaving the electrical connection surfaces 9b. The lower step portions 6a- 2, 6b-2 constitutes a socket portion 10 that can easily perform the mounting operation of the semiconductor laser unit A to the pickup portion.
[0028]
The recessed portions 6a-3 and 6b-3 on the inner surface side of the resin molded bodies 6a and 6b are formed so that the island 5 can be accommodated leaving the mounting surfaces 2 and 4 and the ear portions 51 and 52. That is, a space portion 11 in which a portion other than the mounting surfaces 2 and 4 of the rectangular portion 53 and the mounting portion 54 is accommodated is formed between both the recessed portions 6a-3 and 6b-3. The heat dissipation can be improved without changing the external dimensions.
[0029]
Further, in this example, the left and right resin molded bodies 6a, 6b are electrically connected to arbitrary lead pins 8 held by the resin molded bodies 6a, 6b on the side surfaces of the upper step portions 6a-1, 6b-1. A window hole 13 for loading the bypass capacitor 12 is opened, and the side surface of the arbitrary lead pin 8 faces the window hole 13.
The bypass capacitor 12 compensates for the drop when the power supply voltage to the semiconductor laser unit A drops momentarily while writing to a DVD or the like is being performed by the pickup unit on which the semiconductor laser unit A is mounted. Is to do.
Then, the bypass capacitor 12 is embedded in the window hole 13 and electrically connected to an arbitrary lead pin 8, so that writing to a DVD or the like can be performed without changing the external dimensions of the semiconductor laser unit A. Is configured to be smoothly performed.
[0030]
The parallel lead pins 8 are held by being dispersed in both resin molded bodies 6a and 6b by molding the left and right resin molded bodies 6a and 6b with resin molds. That is, as described in the patent document previously proposed by the applicant of the present application, each lead pin 8 is formed integrally with a lead frame, and the lead frame is a strip-like ultrathin metal plate, for example, a 42 alloy plate. Or a copper plate or the like is subjected to known means such as press molding or etching so that a plurality of lead pins 8 are formed in parallel with a desired pitch, and this lead frame is set in molds for molding the left and right resin moldings 6a and 6b. By molding the resin molded bodies 6a and 6b, the plurality of lead pins 8 are held in parallel with the resin molded bodies 6a and 6b in the vertical direction.
[0031]
The semiconductor laser unit A of the present example having the above configuration holds the lead pins 8 formed in parallel to each other at a very small pitch on the lead frame by the left and right resin moldings 6a and 6b formed on the lead frame. Therefore, a plurality of lead pins 8 can be integrated with high accuracy, and each lead pin 8 is held in a vertical direction on each resin molded body 6a, 6b, so that each lead pin surrounds the LD chip 1 and the light receiving element 3 on the island 5. Eight inner leads are not occupied, and it is easy to cope with downsizing.
[0032]
Further, since the island 5 is formed of a metal material and includes the mounting surfaces 2 and 4 having excellent flatness and perpendicularity, the LD chip 1 and the light receiving element 3 can be attached with high accuracy.
[0033]
Moreover, since it has the socket part 10 which exposed the electrical contact surface 9b of each lead pin 8, and mounting to a pickup part is performed only by inserting this socket part 10 in the loading port formed in a pickup part, It is possible to eliminate the conventional problems that necessitate mounting work such as connecting lead wires for each lead pin 8 and soldering, and to greatly simplify the pickup assembly work.
[0034]
Further, in the semiconductor laser unit A of this example, the left and right resin molded bodies 6a and 6b made of a high thermal conductive resin are joined to each other with the island 5 interposed therebetween, and are joined and integrated by ultrasonic welding. The molding part 6 and each lead pin 8 are integrated, and the resin molding part 6 transmits the heat of the island 5 to each lead pin 8 so that each lead pin 8 also functions as a heat radiating member. Obtainable.
In addition, since the space 11 formed between the resin molded bodies 6a and 6b accommodates portions other than the rectangular portion 53 of the island 5 and the mounting surfaces 2 and 4 of the mounting portion 54, the outer shape of the semiconductor laser unit A The heat dissipation function can be obtained while maintaining the same dimensions as those of the conventional semiconductor laser unit.
[0035]
In addition, by installing the bypass capacitor 12 in the window holes 13 provided in the left and right resin moldings 6a and 6b, the semiconductor laser unit A can be bypassed while maintaining the same external dimensions as those of the conventional semiconductor laser unit. The capacitor 12 can compensate for a momentary drop in the power supply voltage to the semiconductor laser unit A, thereby preventing an adverse effect on a writing operation on a DVD or the like.
[0036]
In this example, the resin molded portion 6 is formed by the pair of left and right resin molded bodies 6a and 6b, so that the semiconductor laser unit A can be easily assembled. Although not limited to the configuration, although not shown, it is also possible to use a resin molded portion that is integrally formed so that a plurality of lead pins are arranged in parallel on the left and right sides of the island.
In this case, the resin molded portion can be integrally formed using a high thermal conductive resin having a thermal conductivity of more than 0.8 W / m · K, and the heat dissipation can be further greatly improved.
As such a high thermal conductive resin, a high thermal conductive resin composed of a synthetic resin material having a thermal deformation temperature of 120 ° C. or higher; 15 to 35 wt%, inorganic filler; 75 to 60 wt%, reinforcing fiber; 10 to 5 wt% Can be used.
[0037]
Next, a measurement test of the heat radiation function between the semiconductor laser unit according to the present invention and a conventional product will be described.
[0038]
【Example】
As an embodiment of the present invention, the above-described semiconductor laser unit A described with reference to FIGS. 1 and 2 is the first embodiment, and a resin molded portion integrally molded so that a plurality of lead pins are arranged in parallel on the left and right sides of the island Example 2 was used as Example 2.
[0039]
Example 1 uses a resin molding part composed of a pair of left and right resin moldings, and each resin molding has 55 wt% of PPS resin as a synthetic resin material having a heat deformation temperature of 120 ° C. or more, as an inorganic filler. Highly thermal conductive resin with a thermal conductivity of 0.4 to 0.6 W / m · K (for example, manufactured by Dainippon Ink & Chemicals, Inc.), which is composed of 38 wt% ceramic particulates and 7 wt% glass fibers as reinforcing fibers. DIC-PPS / FZ-3600 series).
[0040]
The resin molded part of Example 2 is a composition in which 20 wt% of PPS resin as a synthetic resin material having a heat deformation temperature of 120 ° C. or higher, 70 wt% of ceramic granular material as an inorganic filler, and 10 wt% of glass fibers as reinforcing fibers are blended. And was integrally molded using a high thermal conductivity resin having a thermal conductivity of 1.0 to 2.0 W / m · K (for example, Fortron KPS / 8800 series manufactured by Kureha Chemical Co., Ltd.).
[0041]
Using these examples as samples, the heat radiation effect was measured using the measuring device 200 shown in FIG.
The measuring device 200 records the temperature change with the lapse of time, and the tip of the heater (measurement point (1)) applied to the LD chip mounting surface 2 in the island 5 and the mounting surface 2 (measurement point ▲). 2 ▼), the central part (measurement points (3), (4)) of the ears 51 and 52 which are the left and right ends of the island 5, and the lower end central part (measurement point (5)) of the socket part 10 Each temperature change can be recorded.
[0042]
Then, the tip of the heater was applied to the mounting surface 2 of the LD chip, heated to 200 ° C., and the temperature change with time at each measurement point (1) to (5) was measured.
The result of Example 1 is shown in FIG. 5 (a), and the result of Example 2 is shown in FIG. 6 (a).
[0043]
[Comparative example]
In each of the above Examples 1 and 2, as shown in FIG.
Further, in Example 1, the left and right resin molded bodies 6a and 6b are composed of a composition in which a polyamide resin as a synthetic resin material having a heat deformation temperature of 120 ° C. or higher is blended by 70 wt%, and glass fibers as reinforcing fibers are blended by 30 wt%. The resin was integrally molded using a resin having a thermal conductivity of 0.2 to 0.3 W / m · K (for example, Allen / 430 series manufactured by Mitsui Chemicals), and Comparative Example 3 was obtained.
Using these comparative examples as samples, the temperature change with the passage of time at the measurement points (1) to (5) was measured in the same manner as in the examples. The result of Comparative Example 1 is shown in FIG. 5B, the result of Comparative Example 2 is shown in FIG. 6B, and the result of Comparative Example 3 is shown in FIG.
[0044]
In Example 1, Example 2 and Comparative Example 3, all the measurement points (particularly (5)) were compared by comparing the temperature conditions of the measurement points (2) to (5) after the elapse of a predetermined time from the start of measurement. Each Example was superior to Comparative Example 3 in heat dissipation effect, and it was confirmed that the product of the present invention was improved in heat dissipation effect compared to the conventional product.
[0045]
Further, by comparing Example 1 with Comparative Example 1 and Example 2 with Comparative Example 2, it was confirmed that the heat radiation function was exhibited in both the island and the lead frame in the product of the present invention, and the above-mentioned effect was obtained. .
[0046]
As mentioned above, although the example of the embodiment of the semiconductor laser unit according to the present invention has been described, the present invention is not limited to the illustrated example and the above-described example, and various modifications can be made within the scope of the technical idea described in the claims. It goes without saying that changes are possible.
[0047]
【The invention's effect】
Since the semiconductor laser unit according to the present invention is configured as described above, the following effects are obtained.
[0048]
(Claims 1 to 3)
It can be easily incorporated into optical disc application equipment that is remarkable in size, thickness, and weight, such as notebook PCs, PDAs, portable and car-mounted AV equipment, and it is extremely compact, yet has high product accuracy. Providing a compact semiconductor laser unit with a heat dissipation function that can handle large-capacity laser emission, such as writing to a DVD, and having the effects described above while maintaining the standard dimensions of conventional products did it.
[0049]
(Claim 4)
Using a resin molded part formed by integrating a pair of left and right resin molded bodies that are bonded to each other across an island by ultrasonic bonding, the assembly of the semiconductor laser unit is facilitated, and the thermal conductivity of the resin molded part is increased. We were able to provide products with excellent mechanical strength and reliability within the range that does not affect ultrasonic bonding.
[0050]
(Claim 5)
Since the resin molded part is molded using a resin having a thermal conductivity of 0.8 W / m · K or more, the above-described heat dissipation can be further improved, and the resin molded part is vertically disposed on both the left and right sides of the island. As a result, it is possible to provide a product with excellent mechanical strength and reliability without the possibility of problems such as a decrease in mechanical strength due to ultrasonic welding. .
[0051]
(Claim 6)
It is possible to provide a semiconductor laser unit having the above-described effects, on which elements such as a laser diode chip for a light source and a light receiving member for reading a signal are mounted.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an example of an embodiment of the present invention.
2 is an exploded perspective view of FIG. 1. FIG.
FIGS. 3A and 3B are simplified diagrams showing a method for measuring a temperature distribution by heat radiation, in which FIG. 3A shows the upper surface side of the semiconductor laser unit, and FIG.
4A and 4B are simplified diagrams showing a method for measuring a temperature distribution by heat radiation using a lead-cut product. FIG. 4A shows the upper surface side of the semiconductor laser unit, and FIG.
5 is a graph showing measurement results of temperature distribution due to heat radiation, where (A) shows Example 1 and (B) shows Comparative Example 1. FIG.
6A and 6B are graphs showing measurement results of temperature distribution due to heat radiation, where FIG. 6A shows Example 2, and FIG. 6B shows Comparative Example 2. FIG.
FIG. 7 is a graph showing a measurement result of temperature distribution due to heat radiation, and shows Comparative Example 3;
[Explanation of symbols]
A: Semiconductor laser unit 1: LD chip (laser diode chip)
3: Light receiving element 2, 4: Mounting surface 5: Island 6a, 6b: Resin molded body 6: Resin molded part 7: Wire bonding (conduction means)
8: Lead pins 9a, 9b: Electrical connection surface

Claims (6)

A metal island on which at least a laser diode chip for a light source is mounted, and a plurality of islands that are held in parallel in the vertical direction on both left and right sides of the island and are electrically connected to the laser diode chip by conducting means such as wire bonding A semiconductor laser unit in which each lead pin is integrated with the island by a resin molding part,
The resin molding part is molded with a high thermal conductive resin so as to hold each lead pin while leaving an electrical connection surface on the upper part and side part of each parallel lead pin,
The semiconductor laser unit is formed so that heat generated by the laser diode chip is conducted from the island to the lead pins through the resin molding portion, and heat is radiated by the island and the plurality of lead pins. The semiconductor laser unit according to claim 1, wherein the high thermal conductive resin has a characteristic of thermal conductivity of 0.4 W / m · K or more. The high thermal conductive resin comprises a synthetic resin material having a heat distortion temperature of 120 ° C or higher; 15 to 60 wt%, inorganic filler; 75 to 35 wt%, reinforcing fiber; 10 to 5 wt%. Semiconductor laser unit. The resin molded part has a characteristic of thermal conductivity of 0.4 to 0.8 W / m · K, and a synthetic resin material having a heat deformation temperature of 120 ° C. or higher; 40 to 60 wt%, inorganic filler; 50 to 35 wt% , Reinforcing fiber; composed of a pair of left and right resin moldings joined together with an island sandwiched by a high thermal conductive resin having a composition of 10 to 5 wt%, and the resin moldings are joined and integrated by ultrasonic welding. The semiconductor laser unit according to any one of claims 1 to 3. The resin molded part has a characteristic of thermal conductivity of 0.8 W / m · K or more, and a synthetic resin material having a heat deformation temperature of 120 ° C. or higher; 15 to 35 wt%, inorganic filler; 75 to 60 wt%, reinforcing fiber Any one of claims 1 to 3, wherein a plurality of lead pins are integrally formed so as to be held in parallel in a vertical direction on both the left and right sides of the island by a high thermal conductive resin having a composition of 10 to 5 wt%; The semiconductor laser unit described. An element such as a laser diode chip for a light source and / or a light receiving member for reading a signal is mounted on the island, and the element and each lead pin are electrically connected by a conductive means such as wire bonding. The semiconductor laser unit according to claim 1.

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