JP2005007391A - 有機半導電性化合物を含有する溶液、その使用、半導電性化合物を含有する層および該層の使用 - Google Patents
有機半導電性化合物を含有する溶液、その使用、半導電性化合物を含有する層および該層の使用 Download PDFInfo
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- JP2005007391A JP2005007391A JP2004156607A JP2004156607A JP2005007391A JP 2005007391 A JP2005007391 A JP 2005007391A JP 2004156607 A JP2004156607 A JP 2004156607A JP 2004156607 A JP2004156607 A JP 2004156607A JP 2005007391 A JP2005007391 A JP 2005007391A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
【解決手段】有機半導電性化合物を含有する溶液が少なくとも1つの溶剤および安定剤として少なくとも1つの塩基性化合物を含有する。
【選択図】なし
Description
有機半導電性化合物に対して比較的高い溶解力を有する溶剤が記載されており、この場合有機半導電性化合物は、以下、有機半導体とも呼称されている。適当な溶剤は、例えばクロロホルム、トルエン、THF、p−キシレン、クロロベンゼンおよび1,2,4−トリクロロベンゼンが挙げられている(Appl. Phys. Lett., 1996, Vol. 69, No. 26, p.4108; J. Mater. Chem., 1999, Vol. 9, p. 1895; Synth. Met., 1999, Vol. 102, p. 897)。
Chem. Mater., 1998, Volume 10, p. 633 Appl. Phys. Lett., 1996, Vol. 69, No. 26, p.4108 Mater. Chem., 1999, Vol. 9, p. 1895 Synth. Met., 1999, Vol. 102, p. 897 F.C. de Schryver et al., Synthetic Metals 2003, 132, 289-295 S. Holdcroft, Macromolecules 1991, 24, 4834-4838 Macromolecules 1993, 26, 2954-2962
HxN(R1,2,3)3−x (I)
〔式中、
xは、0、1または2であり、
R1,2,3は、1、2または3個の同一かまたは異なるR1基、R2基、R3基であり、
R1、R2、R3は、同一かまたは異なり、それぞれ置換されていてよい直鎖状または分枝鎖状のC1〜C20−アルキル、C1〜C20−シクロアルキルまたはC1〜C20−アリールである〕で示される化合物である。
の塩基性化合物は、例えばn−アルキルアミン、例えばメチルアミン、エチルアミン、プロピルアミン、ブチルアミン、ペンチルアミン、ヘキシルアミン、ヘプチルアミン、オクチルアミン、ノニルアミン、デシルアミンまたはドデシルアミン、ジアルキルアミン、例えばジエチルアミンまたはジイソプロピルアミン、トリアルキルアミン、例えばトリメチルアミン、ジメチルエチルアミン、トリエチルアミン、トリプロピルアミン、トリブチルアミン、トリペンチルアミンまたはトリヘキシルアミン、またはこれらの混合物、例えばn−ブチルアミンまたは第三ブチルアミンの混合物である。5〜20個の環内炭素原子ならびに窒素、酸素および硫黄の群からの1〜3個の同一かまたは異なる環内ヘテロ原子を有する、置換されていてもよい芳香族化合物または置換されていてもよい飽和または不飽和の脂肪族化合物、置換されていてもよい飽和または不飽和の複素環式化合物は、ピリジン、ピラゾール、ピラジン、ピリダジン、ピリミジン、ピロールおよび3−ピロリンを含む。しかし、上記の記載は、例により本発明を説明するのに役立つにすぎないが、排除されるものと見なされうるものではない。
nは、4〜100000。好ましくは4〜100、よりいっそう好ましくは4〜10の整数であり、
R4a、R4bは、それぞれ独立にHであるかまたは1個以上の酸素原子または硫黄原子、シリレン基、ホスホノイル基またはホスホリル基によって中断されていてよいC1〜C20−アルキル基、好ましくはそれぞれ独立にC1〜C12−アルキル基であり、
Arは、置換されていてよい1,4−フェニレン、2,7−フルオレンまたは2,5−チオフェンであり、Arは、同一でも異なっていてもよい〕で示される化合物である。
nは、4〜100000。好ましくは4〜100、よりいっそう好ましくは4〜10の整数であり、
R4a、R4bは、それぞれ独立にHであるかまたは1個以上の酸素原子または硫黄原子、シリレン基、ホスホノイル基またはホスホリル基によって中断されていてよいC1〜C20−アルキル基、好ましくはそれぞれ独立にC1〜C12−アルキル基であり、
R5、R6は、それぞれ独立にHであるかまたは置換されていてもよいC1〜C20−アルキル基、置換されていてもよいC1〜C20−アルコキシ基であるかまたは一緒になって置換されていてもよいC1〜C6−ジオキシアルキレン基であり、好ましくはそれぞれ独立にHまたはC1〜C6−アルキル基、よりいっそう好ましくはそれぞれHである〕で示される化合物である。
5,5′′′−ジデシル−2,2′:5′,2′′:5′′,2′′′−クォーターチオフェン(2mg、3.3×10−3mol)をクロロホルム10mlに溶解し、直ちにUV/Vis分光法によって研究した(図1、図2参照)。24時間に亘って次の変化を観察することができる(図1):
1)λmaxは、401から412nmに変化し、
2)λmaxの強さは、よりいっそう弱くなり、λmaxは、幅広くなり、
3)約330nmの最大を有する新しい吸収バンドが現れる。
5,5′′′−ジデシル−2,2′:5′,2′′:5′′,2′′′−クォーターチオフェン(2mg、3.3×10−3mol)を空気の下でクロロホルム中のジイソプロピルアミンの1mg/mlの溶液10ml(ジイソプロピルアミン23mgおよびクロロホルム23mlから構成された)に溶解し、直ちにUV/Vis分光法によって研究した(図3)。UV/Visスペクトルにおける変化は、空気の下で24時間に亘って観察されなかった。
5,5′′′−ジデシル−2,2′:5′,2′′:5′′,2′′′−クォーターチオフェン(2mg、3.3×10−3mol)を空気の下でクロロホルム中のトリエチルアミンの1mg/mlの溶液10ml(トリエチルアミン23mgおよびクロロホルム23mlから構成された)に溶解し、直ちにUV/Vis分光法によって研究した(図4)。空気の下で14日間に亘るλmaxの位置および強さの変化は、観察されなかった。
Claims (4)
- 有機半導電性化合物を含有する溶液において、該溶液が少なくとも1つの溶剤および安定剤として少なくとも1つの塩基性化合物を含有することを特徴とする、有機半導電性化合物を含有する溶液。
- 半導電性層を製造するための請求項1記載の溶液の使用。
- 活性電子部品および発光電子部品、例えば電界効果型トランジスタ、有機発光ダイオード、光電池、レーザーまたはセンサーへの半導体としての請求項3記載の層の使用。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10324533A DE10324533A1 (de) | 2003-05-28 | 2003-05-28 | Stabile Lösungen von organischen halbleitenden Verbindungen |
Publications (1)
Publication Number | Publication Date |
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JP2005007391A true JP2005007391A (ja) | 2005-01-13 |
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JP2004156607A Pending JP2005007391A (ja) | 2003-05-28 | 2004-05-26 | 有機半導電性化合物を含有する溶液、その使用、半導電性化合物を含有する層および該層の使用 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20050012068A1 (ja) |
EP (1) | EP1482575B1 (ja) |
JP (1) | JP2005007391A (ja) |
KR (1) | KR20040103335A (ja) |
AT (1) | ATE533193T1 (ja) |
DE (1) | DE10324533A1 (ja) |
TW (1) | TWI349025B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009010102A (ja) * | 2007-06-27 | 2009-01-15 | Gunze Ltd | 半導体素子 |
KR101312269B1 (ko) | 2007-01-05 | 2013-09-25 | 삼성전자주식회사 | 고분자 태양전지 및 그의 제조방법 |
JP2017208552A (ja) * | 2017-06-12 | 2017-11-24 | 日産化学工業株式会社 | 電荷輸送性ワニス |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US7317048B2 (en) * | 2003-01-06 | 2008-01-08 | E.I. Du Pont De Nemours And Company | Variable resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in electronic devices |
EP2559079B1 (en) * | 2010-04-12 | 2020-04-01 | Merck Patent GmbH | Composition and method for preparation of organic electronic devices |
US20170267515A1 (en) * | 2016-03-18 | 2017-09-21 | Dusty Road Saddlery And Repair, Llc | Saddle anchor and detachable stirrup system |
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- 2004-05-15 EP EP04011625A patent/EP1482575B1/de not_active Not-in-force
- 2004-05-26 US US10/853,844 patent/US20050012068A1/en not_active Abandoned
- 2004-05-26 JP JP2004156607A patent/JP2005007391A/ja active Pending
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JP2017208552A (ja) * | 2017-06-12 | 2017-11-24 | 日産化学工業株式会社 | 電荷輸送性ワニス |
Also Published As
Publication number | Publication date |
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EP1482575A2 (de) | 2004-12-01 |
US20050012068A1 (en) | 2005-01-20 |
DE10324533A1 (de) | 2004-12-16 |
EP1482575B1 (de) | 2011-11-09 |
TW200512263A (en) | 2005-04-01 |
TWI349025B (en) | 2011-09-21 |
KR20040103335A (ko) | 2004-12-08 |
EP1482575A3 (de) | 2005-10-05 |
ATE533193T1 (de) | 2011-11-15 |
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