JP2004534452A5 - - Google Patents

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Publication number
JP2004534452A5
JP2004534452A5 JP2003506100A JP2003506100A JP2004534452A5 JP 2004534452 A5 JP2004534452 A5 JP 2004534452A5 JP 2003506100 A JP2003506100 A JP 2003506100A JP 2003506100 A JP2003506100 A JP 2003506100A JP 2004534452 A5 JP2004534452 A5 JP 2004534452A5
Authority
JP
Japan
Prior art keywords
switch
switching device
load
capacitance
ncd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003506100A
Other languages
English (en)
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JP2004534452A (ja
JP4326940B2 (ja
Filing date
Publication date
Priority claimed from GB0114675A external-priority patent/GB2378065B/en
Application filed filed Critical
Publication of JP2004534452A publication Critical patent/JP2004534452A/ja
Publication of JP2004534452A5 publication Critical patent/JP2004534452A5/ja
Application granted granted Critical
Publication of JP4326940B2 publication Critical patent/JP4326940B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (6)

  1. 負荷の両端にパルスを供給する高電圧スイッチング装置であって、
    前記負荷に電気エネルギーを供給するコンデンサと、
    前記コンデンサを負荷に接続するスイッチスタックと、
    を備え、
    前記スイッチスタックが、直列接続された複数のスイッチモジュールと、該スイッチモジュールの両端に並列接続された複数の負荷キャパシタンスとを含む高電圧スイッチング装置。
  2. 前記各スイッチモジュールが、スイッチの両端に並列接続されたキャパシタンスnCdを有し、ここでCdは負荷のキャパシタンスであり、nはスイッチモジュールの数である請求項1に記載のスイッチング装置。
  3. 前記並列接続された負荷キャパシタンスnCdが、nCd>>Cであるように選択され、Cは前記各スイッチモジュールの浮遊容量である請求項2に記載のスイッチング装置。
  4. 前記スイッチモジュールがFETスイッチを含む請求項1、2、又は3に記載のスイッチング装置。
  5. 前記FETスイッチが、負荷キャパシタンスと共に回路基板上に配置され、前記回路基板が互いに極めて近接して積層される請求項4に記載のスイッチング装置。
  6. 前記各スイッチモジュールが、並列に配置された複数のスイッチを含み、該スイッチの各々の両端にキャパシタンスnCd/Mが配置され、ここでMはスイッチの個数である請求項1から5のいずれかに記載のスイッチング装置。
JP2003506100A 2001-06-15 2002-06-14 高電圧スイッチング装置 Expired - Fee Related JP4326940B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0114675A GB2378065B (en) 2001-06-15 2001-06-15 High voltage switching apparatus
PCT/GB2002/002732 WO2002103904A2 (en) 2001-06-15 2002-06-14 High voltage switching apparatus

Publications (3)

Publication Number Publication Date
JP2004534452A JP2004534452A (ja) 2004-11-11
JP2004534452A5 true JP2004534452A5 (ja) 2006-01-05
JP4326940B2 JP4326940B2 (ja) 2009-09-09

Family

ID=9916706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003506100A Expired - Fee Related JP4326940B2 (ja) 2001-06-15 2002-06-14 高電圧スイッチング装置

Country Status (6)

Country Link
US (1) US7256637B2 (ja)
EP (1) EP1396082B1 (ja)
JP (1) JP4326940B2 (ja)
AU (1) AU2002345159A1 (ja)
GB (1) GB2378065B (ja)
WO (1) WO2002103904A2 (ja)

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US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11227745B2 (en) 2018-08-10 2022-01-18 Eagle Harbor Technologies, Inc. Plasma sheath control for RF plasma reactors
CN110692188B (zh) 2017-02-07 2022-09-09 鹰港科技有限公司 变压器谐振转换器
JP6902167B2 (ja) 2017-08-25 2021-07-14 イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. ナノ秒パルスを使用する任意波形の発生
US11222767B2 (en) * 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
CN109713931B (zh) * 2018-12-06 2020-05-19 西安交通大学 基于真空密闭环境的纳秒上升时间强脉冲电流发生装置
KR20240028538A (ko) 2019-01-08 2024-03-05 이글 하버 테크놀로지스, 인코포레이티드 나노초 펄서 회로의 효율적 에너지 회수
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
US11527383B2 (en) 2019-12-24 2022-12-13 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems

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