JP2004531446A5 - - Google Patents
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- Publication number
- JP2004531446A5 JP2004531446A5 JP2002579545A JP2002579545A JP2004531446A5 JP 2004531446 A5 JP2004531446 A5 JP 2004531446A5 JP 2002579545 A JP2002579545 A JP 2002579545A JP 2002579545 A JP2002579545 A JP 2002579545A JP 2004531446 A5 JP2004531446 A5 JP 2004531446A5
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- Japan
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/711,198 US6454851B1 (en) | 2000-11-09 | 2000-11-09 | Method for preparing molten silicon melt from polycrystalline silicon charge |
| PCT/US2001/051653 WO2002081786A1 (en) | 2000-11-09 | 2001-10-23 | Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004531446A JP2004531446A (ja) | 2004-10-14 |
| JP2004531446A5 true JP2004531446A5 (ja) | 2005-12-22 |
| JP4287657B2 JP4287657B2 (ja) | 2009-07-01 |
Family
ID=24857143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002579545A Expired - Fee Related JP4287657B2 (ja) | 2000-11-09 | 2001-10-23 | 多結晶シリコン装入物から溶融させて溶融シリコンを用意するための方法および装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6454851B1 (ja) |
| EP (1) | EP1337697B1 (ja) |
| JP (1) | JP4287657B2 (ja) |
| KR (1) | KR100669300B1 (ja) |
| CN (1) | CN1473212A (ja) |
| DE (1) | DE60115951T2 (ja) |
| TW (1) | TW527450B (ja) |
| WO (1) | WO2002081786A1 (ja) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030101924A1 (en) * | 2001-11-15 | 2003-06-05 | Memc Electronic Materials, Inc. | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
| JP4908730B2 (ja) * | 2003-04-21 | 2012-04-04 | 株式会社Ｓｕｍｃｏ | 高抵抗シリコン単結晶の製造方法 |
| US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| JP4784401B2 (ja) * | 2006-05-30 | 2011-10-05 | 株式会社Ｓｕｍｃｏ | シリコン単結晶の育成プロセスにおける融液の液面位置監視装置 |
| US8057598B2 (en) * | 2006-06-13 | 2011-11-15 | Young Sang Cho | Manufacturing equipment for polysilicon ingot |
| US20130263772A1 (en) * | 2007-12-04 | 2013-10-10 | David L. Bender | Method and apparatus for controlling melt temperature in a Czochralski grower |
| TW200938664A (en) * | 2007-12-19 | 2009-09-16 | Schott Ag | Method for producing a monocrystalline or polycrystalline semiconductor material |
| DE102007061704A1 (de) | 2007-12-19 | 2009-09-10 | Schott Ag | Verfahren zur Herstellung eines ein- oder polykristallinen Materials |
| US7573587B1 (en) * | 2008-08-25 | 2009-08-11 | Memc Electronic Materials, Inc. | Method and device for continuously measuring silicon island elevation |
| CN103787336B (zh) | 2008-09-16 | 2016-09-14 | 储晞 | 生产高纯颗粒硅的方法 |
| CN103649380A (zh) | 2011-03-15 | 2014-03-19 | Gtat公司 | 用于晶体生长装置的自动检视系统 |
| KR101481442B1 (ko) | 2013-10-02 | 2015-01-13 | 한국생산기술연구원 | 단결정잉곳 성장로의 아일랜드 위치검출장치 및 아일랜드 위치검출방법 |
| EP2886519B1 (de) * | 2013-12-18 | 2016-05-25 | Heraeus Quarzglas GmbH & Co. KG | Vertikal-tiegelziehverfahren zur herstellung eines glaskörpers mit hohem kieselsäuregehalt |
| CN103882516B (zh) * | 2014-03-25 | 2016-05-11 | 山西中电科新能源技术有限公司 | 多晶硅铸锭炉在线补料方法 |
| WO2017043826A1 (ko) * | 2015-09-07 | 2017-03-16 | 한국생산기술연구원 | 용융로의 아일랜드 위치검출 장치 및 방법 |
| CN107604446A (zh) * | 2017-10-25 | 2018-01-19 | 宁晋晶兴电子材料有限公司 | 一种新型的熔融表皮料结构及其熔融方法 |
| JP6935790B2 (ja) * | 2018-10-15 | 2021-09-15 | 株式会社Sumco | 石英るつぼ内周面の評価方法及び石英るつぼ内周面の評価装置 |
| CN112095141B (zh) * | 2019-06-17 | 2022-05-03 | 宁夏隆基硅材料有限公司 | 一种拉晶方法、一种单晶炉、一种计算机可读存储介质 |
| CN112520437B (zh) * | 2020-11-23 | 2021-07-06 | 眉山博雅新材料有限公司 | 一种加料控制方法和系统 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5653799A (en) | 1995-06-02 | 1997-08-05 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
| US5588993A (en) | 1995-07-25 | 1996-12-31 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| US5762491A (en) * | 1995-10-31 | 1998-06-09 | Memc Electronic Materials, Inc. | Solid material delivery system for a furnace |
| US5656078A (en) | 1995-11-14 | 1997-08-12 | Memc Electronic Materials, Inc. | Non-distorting video camera for use with a system for controlling growth of a silicon crystal |
| US6077345A (en) * | 1996-04-10 | 2000-06-20 | Ebara Solar, Inc. | Silicon crystal growth melt level control system and method |
| US5997234A (en) * | 1997-04-29 | 1999-12-07 | Ebara Solar, Inc. | Silicon feed system |
| US5846318A (en) | 1997-07-17 | 1998-12-08 | Memc Electric Materials, Inc. | Method and system for controlling growth of a silicon crystal |
| US5882402A (en) | 1997-09-30 | 1999-03-16 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
| US5919303A (en) * | 1997-10-16 | 1999-07-06 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
| US6106612A (en) * | 1998-06-04 | 2000-08-22 | Seh America Inc. | Level detector and method for detecting a surface level of a material in a container |
-
2000
- 2000-11-09 US US09/711,198 patent/US6454851B1/en not_active Expired - Fee Related
-
2001
- 2001-10-23 CN CNA018185371A patent/CN1473212A/zh active Pending
- 2001-10-23 DE DE60115951T patent/DE60115951T2/de not_active Expired - Lifetime
- 2001-10-23 EP EP01273548A patent/EP1337697B1/en not_active Expired - Lifetime
- 2001-10-23 KR KR1020037006272A patent/KR100669300B1/ko not_active IP Right Cessation
- 2001-10-23 WO PCT/US2001/051653 patent/WO2002081786A1/en active IP Right Grant
- 2001-10-23 JP JP2002579545A patent/JP4287657B2/ja not_active Expired - Fee Related
- 2001-10-31 TW TW090127030A patent/TW527450B/zh not_active IP Right Cessation