JP2004529487A5 - - Google Patents

Download PDF

Info

Publication number
JP2004529487A5
JP2004529487A5 JP2002547270A JP2002547270A JP2004529487A5 JP 2004529487 A5 JP2004529487 A5 JP 2004529487A5 JP 2002547270 A JP2002547270 A JP 2002547270A JP 2002547270 A JP2002547270 A JP 2002547270A JP 2004529487 A5 JP2004529487 A5 JP 2004529487A5
Authority
JP
Japan
Prior art keywords
mirror
slope
mobility
doped
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002547270A
Other languages
Japanese (ja)
Other versions
JP2004529487A (en
Filing date
Publication date
Priority claimed from US09/724,820 external-priority patent/US6905900B1/en
Application filed filed Critical
Publication of JP2004529487A publication Critical patent/JP2004529487A/en
Publication of JP2004529487A5 publication Critical patent/JP2004529487A5/ja
Pending legal-status Critical Current

Links

Description

ミラー１１０の垂直コンダクタンスは、抵抗を過度に増大しないように十分な高さでなければならない。ミラースタックは異なるバンドギャップの半導体から作られるので、ミラーは、横方向電流を低減するのに妥当な限り等方導電性のものとして設計しなければならない。このため、抵抗率が全面的に方向とは無関係にほとんど同じになるように、より高い移動度を有する層はより低いドーピングを必要とし、より低い移動度を有する層はより高いドーピングを必要とする。ホール濃度と移動度との積は、ミラー１１０のできるだけ多くの部分について定数になる必要がある。半導体同士の境界部は、その傾斜の中間組成の方が移動度が低く、ギャップのより大きな材料に隣接するギャップの小さい方の材料が変調ドーピングされるので、より高濃度にかつ傾斜を持たせてドープする必要がある。 The vertical conductance of the mirror 110 must be high enough not to increase the resistance excessively. Since the mirror stack is made from different bandgap semiconductors, the mirror must be designed to be isotropically conductive as reasonable as possible to reduce the lateral current. Thus, layers with higher mobility require lower doping and layers with lower mobility require higher doping so that the resistivity is almost the same regardless of direction throughout. you. The product of hole concentration and mobility needs to be a constant for as many parts of the mirror 110 as possible. At the boundary between semiconductors, the intermediate composition of the slope has a lower mobility , and the material with the smaller gap adjacent to the material with the larger gap is modulation-doped, so that the slope has a higher concentration and a slope. Need to be doped .

JP2002547270A 2000-11-28 2001-11-26 Multifunctional method and system for single mode VCSEL Pending JP2004529487A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/724,820 US6905900B1 (en) 2000-11-28 2000-11-28 Versatile method and system for single mode VCSELs
PCT/US2001/044385 WO2002045217A2 (en) 2000-11-28 2001-11-26 Versatile method and system for single mode vcsels

Publications (2)

Publication Number Publication Date
JP2004529487A JP2004529487A (en) 2004-09-24
JP2004529487A5 true JP2004529487A5 (en) 2011-05-12

Family

ID=24912046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002547270A Pending JP2004529487A (en) 2000-11-28 2001-11-26 Multifunctional method and system for single mode VCSEL

Country Status (7)

Country Link
US (4) US6905900B1 (en)
EP (1) EP1354376A2 (en)
JP (1) JP2004529487A (en)
KR (1) KR20030060961A (en)
CA (1) CA2430348A1 (en)
TW (1) TW512562B (en)
WO (1) WO2002045217A2 (en)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6904072B2 (en) * 2001-12-28 2005-06-07 Finisar Corporation Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer
KR100475858B1 (en) * 2002-04-01 2005-03-18 주식회사 테라스테이트 A Vertical Cavity Surface Emitting Lasers
JP3729263B2 (en) * 2002-09-25 2005-12-21 セイコーエプソン株式会社 Surface emitting semiconductor laser and method for manufacturing the same, optical module, and optical transmission device
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
JP2004288674A (en) * 2003-03-19 2004-10-14 Fuji Xerox Co Ltd Surface-emitting semiconductor laser and optical communication system using it
JP3838218B2 (en) 2003-05-19 2006-10-25 ソニー株式会社 Surface emitting semiconductor laser device and method for manufacturing the same
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US20060002442A1 (en) 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
KR100624433B1 (en) * 2004-08-13 2006-09-19 삼성전자주식회사 P type Semiconductor Carbon Nanotube and Method of Manufacturing the Same
US7528824B2 (en) * 2004-09-30 2009-05-05 Microsoft Corporation Keyboard or other input device using ranging for detection of control piece movement
US8815617B2 (en) * 2004-10-01 2014-08-26 Finisar Corporation Passivation of VCSEL sidewalls
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7826506B2 (en) * 2004-10-01 2010-11-02 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
JP4855038B2 (en) * 2004-10-14 2012-01-18 三星電子株式会社 VECSEL with funnel structure
KR100982421B1 (en) * 2004-10-14 2010-09-15 삼성전자주식회사 High power surface emitting laser device having a funnel shaped current injection region
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7385230B1 (en) * 2005-02-08 2008-06-10 The University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
US20060213997A1 (en) * 2005-03-23 2006-09-28 Microsoft Corporation Method and apparatus for a cursor control device barcode reader
JP4515949B2 (en) * 2005-03-31 2010-08-04 株式会社東芝 Planar optical semiconductor device
JP5017804B2 (en) * 2005-06-15 2012-09-05 富士ゼロックス株式会社 Tunnel junction type surface emitting semiconductor laser device and manufacturing method thereof
US7268705B2 (en) * 2005-06-17 2007-09-11 Microsoft Corporation Input detection based on speckle-modulated laser self-mixing
US7557795B2 (en) * 2005-06-30 2009-07-07 Microsoft Corporation Input device using laser self-mixing velocimeter
JP5376104B2 (en) 2005-07-04 2013-12-25 ソニー株式会社 Surface emitting semiconductor laser
CA2620228C (en) * 2005-08-26 2014-12-09 Action Pharma A/S Therapeutically active .alpha.-msh analogues
US7283214B2 (en) * 2005-10-14 2007-10-16 Microsoft Corporation Self-mixing laser range sensor
US7543750B2 (en) * 2005-11-08 2009-06-09 Microsoft Corporation Laser velocimetric image scanning
US20070109267A1 (en) * 2005-11-14 2007-05-17 Microsoft Corporation Speckle-based two-dimensional motion tracking
US7505033B2 (en) * 2005-11-14 2009-03-17 Microsoft Corporation Speckle-based two-dimensional motion tracking
JP3876918B2 (en) * 2005-12-12 2007-02-07 ソニー株式会社 Surface emitting semiconductor laser device
DE102006034847A1 (en) 2006-04-27 2007-10-31 Osram Opto Semiconductors Gmbh Opto-electronic semiconductor chip e.g. light emitting diode chip, has contact layer, where electrical contact resistance of contact layer to connection layer is smaller than contact layer to barrier layer
US8213474B2 (en) * 2007-12-21 2012-07-03 Finisar Corporation Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption
US7672350B2 (en) * 2008-06-30 2010-03-02 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Method and device for using optical feedback to overcome bandwidth limitations caused by relaxation oscillation in vertical cavity surface emitting lasers (VCSELs)
JP5434201B2 (en) * 2009-03-23 2014-03-05 ソニー株式会社 Semiconductor laser
JP5590829B2 (en) * 2009-07-03 2014-09-17 キヤノン株式会社 Surface emitting laser, surface emitting laser array, and image forming apparatus
EP2454619A4 (en) 2009-07-17 2016-01-06 Hewlett Packard Development Co Non-periodic grating reflectors with focusing power and methods for fabricatting the same
JP5409221B2 (en) * 2009-09-10 2014-02-05 キヤノン株式会社 Manufacturing method of surface emitting laser and manufacturing method of surface emitting laser array
EP2480917A4 (en) 2009-09-23 2013-05-29 Hewlett Packard Development Co Optical devices based on diffraction gratings
JP5532239B2 (en) * 2009-11-26 2014-06-25 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
JP2011124314A (en) * 2009-12-09 2011-06-23 Fuji Xerox Co Ltd Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device
JP5515722B2 (en) * 2009-12-22 2014-06-11 富士ゼロックス株式会社 Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and information processing device
US9093819B2 (en) 2010-01-29 2015-07-28 Hewlett-Packard Development Company, L.P. Vertical-cavity surface-emitting lasers with non-periodic gratings
US8952403B2 (en) 2010-01-29 2015-02-10 Hewlett-Packard Development, L.P. Optical devices based on non-periodic sub-wavelength gratings
US8842363B2 (en) 2010-01-29 2014-09-23 Hewlett-Packard Development Company, L.P. Dynamically varying an optical characteristic of light by a sub-wavelength grating
JP2012009727A (en) * 2010-06-28 2012-01-12 Fuji Xerox Co Ltd Surface emission semiconductor laser, surface emission semiconductor laser device, optical transmission device, and information processor
US9991676B2 (en) 2010-10-29 2018-06-05 Hewlett Packard Enterprise Development Lp Small-mode-volume, vertical-cavity, surface-emitting laser
JP6015220B2 (en) 2012-08-07 2016-10-26 富士ゼロックス株式会社 Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and information processing device
DE102013100818B4 (en) * 2013-01-28 2023-07-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
JP6135559B2 (en) * 2014-03-10 2017-05-31 ソニー株式会社 Semiconductor light emitting device, method for manufacturing semiconductor light emitting device, and semiconductor device
US11456575B2 (en) * 2017-08-28 2022-09-27 Lumentum Operations Llc Distributed oxide lens for beam shaping
KR102515674B1 (en) * 2018-04-04 2023-03-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 A surface-emitting laser device and light emitting device including the same
KR102569495B1 (en) * 2018-10-19 2023-08-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 A surface-emitting laser device and light emitting device including the same
WO2019194600A1 (en) * 2018-04-04 2019-10-10 엘지이노텍 주식회사 Surface-emitting laser element
TWI794380B (en) * 2018-12-24 2023-03-01 晶元光電股份有限公司 Semiconductor device
WO2021090670A1 (en) * 2019-11-06 2021-05-14 ソニーセミコンダクタソリューションズ株式会社 Surface-emitting laser device
KR20210073955A (en) 2019-12-11 2021-06-21 삼성전자주식회사 Display apparatus and method of manufacturing the same
US11876350B2 (en) 2020-11-13 2024-01-16 Ii-Vi Delaware, Inc. Multi-wavelength VCSEL array and method of fabrication
US20220352693A1 (en) * 2021-04-30 2022-11-03 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity

Family Cites Families (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1108902A (en) 1978-06-15 1981-09-15 R. Ian Macdonald Wavelength selective optical coupler
US4317085A (en) 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4675058A (en) 1983-12-14 1987-06-23 Honeywell Inc. Method of manufacturing a high-bandwidth, high radiance, surface emitting LED
US4660207A (en) 1984-11-21 1987-04-21 Northern Telecom Limited Surface-emitting light emitting device
US4784722A (en) 1985-01-22 1988-11-15 Massachusetts Institute Of Technology Method forming surface emitting diode laser
JPS63318195A (en) 1987-06-19 1988-12-27 Agency Of Ind Science & Technol Transverse buried type surface emitting laser
US4885592A (en) 1987-12-28 1989-12-05 Kofol J Stephen Electronically steerable antenna
US4943970A (en) 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4901327A (en) 1988-10-24 1990-02-13 General Dynamics Corporation, Electronics Division Transverse injection surface emitting laser
US4956844A (en) 1989-03-17 1990-09-11 Massachusetts Institute Of Technology Two-dimensional surface-emitting laser array
US5031187A (en) 1990-02-14 1991-07-09 Bell Communications Research, Inc. Planar array of vertical-cavity, surface-emitting lasers
US5204871A (en) 1990-03-29 1993-04-20 Larkins Eric C Bistable optical laser based on a heterostructure pnpn thyristor
US5115442A (en) 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5052016A (en) 1990-05-18 1991-09-24 University Of New Mexico Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
US5056098A (en) 1990-07-05 1991-10-08 At&T Bell Laboratories Vertical cavity laser with mirror having controllable reflectivity
US5158908A (en) 1990-08-31 1992-10-27 At&T Bell Laboratories Distributed bragg reflectors and devices incorporating same
US5237581A (en) 1990-11-14 1993-08-17 Nec Corporation Semiconductor multilayer reflector and light emitting device with the same
US5216263A (en) 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
US5079774A (en) 1990-12-27 1992-01-07 International Business Machines Corporation Polarization-tunable optoelectronic devices
US5062115A (en) 1990-12-28 1991-10-29 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
US5262360A (en) 1990-12-31 1993-11-16 The Board Of Trustees Of The University Of Illinois AlGaAs native oxide
US5337183A (en) 1991-02-01 1994-08-09 Yeda Research And Development Co. Ltd. Distributed resonant cavity light beam modulator
US5157537A (en) 1991-02-01 1992-10-20 Yeda Research And Development Co., Ltd. Distributed resonant cavity light beam modulator
US5117469A (en) 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
US5625637A (en) * 1991-03-28 1997-04-29 Seiko Epson Corporation Surface emitting semiconductor laser and its manufacturing process
US5140605A (en) 1991-06-27 1992-08-18 Xerox Corporation Thermally stabilized diode laser structure
US5216680A (en) 1991-07-11 1993-06-01 Board Of Regents, The University Of Texas System Optical guided-mode resonance filter
JP3072795B2 (en) 1991-10-08 2000-08-07 キヤノン株式会社 Electron emitting element, electron beam generator and image forming apparatus using the element
US5258990A (en) 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
US5404373A (en) 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
US5212706A (en) 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
US5497390A (en) 1992-01-31 1996-03-05 Nippon Telegraph And Telephone Corporation Polarization mode switching semiconductor laser apparatus
US5325386A (en) 1992-04-21 1994-06-28 Bandgap Technology Corporation Vertical-cavity surface emitting laser assay display system
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5285466A (en) 1992-05-20 1994-02-08 Wisconsin Alumni Research Foundation Feedback mechanism for vertical cavity surface emitting lasers
US5338142A (en) * 1992-07-07 1994-08-16 Michael Gonzales Rotating quick release mechanism for securing parts to bicycles
US5293392A (en) 1992-07-31 1994-03-08 Motorola, Inc. Top emitting VCSEL with etch stop layer
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
JPH0669585A (en) 1992-08-12 1994-03-11 Fujitsu Ltd Surface emitting semiconductor laser and its manufacture
US5386426A (en) 1992-09-10 1995-01-31 Hughes Aircraft Company Narrow bandwidth laser array system
US5396508A (en) 1992-09-22 1995-03-07 Xerox Corporation Polarization switchable quantum well laser
US5438584A (en) 1992-09-22 1995-08-01 Xerox Corporation Dual polarization laser diode with quaternary material system
US5412678A (en) 1992-09-22 1995-05-02 Xerox Corporation Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers
US5363397A (en) 1992-10-29 1994-11-08 Internatioal Business Machines Corporation Integrated short cavity laser with bragg mirrors
US5428634A (en) 1992-11-05 1995-06-27 The United States Of America As Represented By The United States Department Of Energy Visible light emitting vertical cavity surface emitting lasers
DE4240706A1 (en) 1992-12-03 1994-06-09 Siemens Ag Surface emitting laser diode
US5465263A (en) 1992-12-12 1995-11-07 Xerox Corporation Monolithic, multiple wavelength, dual polarization laser diode arrays
US5331654A (en) 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US5416044A (en) 1993-03-12 1995-05-16 Matsushita Electric Industrial Co., Ltd. Method for producing a surface-emitting laser
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5351256A (en) 1993-04-28 1994-09-27 The United States Of America As Represented By The United States Department Of Energy Electrically injected visible vertical cavity surface emitting laser diodes
US5359618A (en) 1993-06-01 1994-10-25 Motorola, Inc. High efficiency VCSEL and method of fabrication
US5359447A (en) 1993-06-25 1994-10-25 Hewlett-Packard Company Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes
SE501721C2 (en) 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Laser device with an optical cavity connected in series laser structures
SE501722C2 (en) 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Surface emitting laser device with vertical cavity
US5446754A (en) 1993-11-05 1995-08-29 Photonics Research Incorporated Phased array semiconductor laser
US5422901A (en) 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
JP3210159B2 (en) 1993-12-10 2001-09-17 キヤノン株式会社 Semiconductor laser, light source device, optical communication system and optical communication method
US5475701A (en) 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
US5390209A (en) 1994-01-05 1995-02-14 At&T Corp. Article comprising a semiconductor laser that is non-degenerate with regard to polarization
KR0132018B1 (en) 1994-01-27 1998-04-14 김만제 Circle grating surface emitting laser diode
EP0668641B1 (en) 1994-02-18 2001-06-06 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
JP3263553B2 (en) 1994-02-23 2002-03-04 キヤノン株式会社 Optical transmitter
US5513202A (en) 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
JPH07307530A (en) 1994-03-17 1995-11-21 Canon Inc Polarizable and modulatable semiconductor laser
US5412680A (en) 1994-03-18 1995-05-02 Photonics Research Incorporated Linear polarization of semiconductor laser
US5606572A (en) 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
US5550081A (en) 1994-04-08 1996-08-27 Board Of Trustees Of The University Of Illinois Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment
US5557626A (en) 1994-06-15 1996-09-17 Motorola Patterned mirror VCSEL with adjustable selective etch region
US5625729A (en) 1994-08-12 1997-04-29 Brown; Thomas G. Optoelectronic device for coupling between an external optical wave and a local optical wave for optical modulators and detectors
US5778018A (en) 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
US5892787A (en) 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
US5892784A (en) 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive p-common surface emitting laser fabricated on n+ substrate
US5530715A (en) 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
US5493577A (en) 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
US5648978A (en) 1995-01-04 1997-07-15 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same
US5633527A (en) * 1995-02-06 1997-05-27 Sandia Corporation Unitary lens semiconductor device
US5568499A (en) 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5646978A (en) 1995-04-27 1997-07-08 Lucent Technologies Inc. Method and apparatus for providing interswitch handover in personal communication services systems
DE19516972C1 (en) * 1995-05-09 1996-12-12 Eos Electro Optical Syst Device for producing a three-dimensional object by means of laser sintering
US5557627A (en) * 1995-05-19 1996-09-17 Sandia Corporation Visible-wavelength semiconductor lasers and arrays
US5598300A (en) 1995-06-05 1997-01-28 Board Of Regents, The University Of Texas System Efficient bandpass reflection and transmission filters with low sidebands based on guided-mode resonance effects
US5574738A (en) 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
US5594751A (en) * 1995-06-26 1997-01-14 Optical Concepts, Inc. Current-apertured vertical cavity laser
US5727013A (en) 1995-10-27 1998-03-10 Wisconsin Alumni Research Foundation Single lobe surface emitting complex coupled distributed feedback semiconductor laser
US5727014A (en) 1995-10-31 1998-03-10 Hewlett-Packard Company Vertical-cavity surface-emitting laser generating light with a defined direction of polarization
FR2741483B1 (en) 1995-11-21 1998-01-02 Thomson Csf QUANTUM WELL OPTOELECTRONIC DEVICE
US5679963A (en) 1995-12-05 1997-10-21 Sandia Corporation Semiconductor tunnel junction with enhancement layer
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
KR0178492B1 (en) 1995-12-21 1999-04-15 양승택 Fabrication method of polarization controlled surface emitting lasers tilted cavity
US6086263A (en) * 1996-06-13 2000-07-11 3M Innovative Properties Company Active device receptacle
US5828684A (en) 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
US5692083A (en) 1996-03-13 1997-11-25 The Whitaker Corporation In-line unitary optical device mount and package therefor
BE1010069A6 (en) * 1996-03-29 1997-12-02 Imec Inter Uni Micro Electr Optical system with high reflectivity grid
US5903590A (en) * 1996-05-20 1999-05-11 Sandia Corporation Vertical-cavity surface-emitting laser device
US5790733A (en) 1996-06-07 1998-08-04 Minnesota Mining And Manufactouring Company Optoelectronic device receptacle and method of making same
US5729566A (en) * 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
US5838715A (en) * 1996-06-20 1998-11-17 Hewlett-Packard Company High intensity single-mode VCSELs
US5726805A (en) 1996-06-25 1998-03-10 Sandia Corporation Optical filter including a sub-wavelength periodic structure and method of making
US5764674A (en) * 1996-06-28 1998-06-09 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
US5940422A (en) * 1996-06-28 1999-08-17 Honeywell Inc. Laser with an improved mode control
US5818861A (en) 1996-07-19 1998-10-06 Hewlett-Packard Company Vertical cavity surface emitting laser with low band gap highly doped contact layer
US5812581A (en) * 1996-07-26 1998-09-22 Honeywell Inc. Lens for a semiconductive device with a laser and a photodetector in a common container
US5805624A (en) 1996-07-30 1998-09-08 Hewlett-Packard Company Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate
US6075799A (en) * 1996-08-28 2000-06-13 Canon Kabushiki Kaisha Polarization selective semiconductor laser, optical transmitter using the same, optical communication system using the same and fabrication method of the same
US5928188A (en) * 1996-09-13 1999-07-27 Mcgary; R. Kern Method of delivering fluid with a non-reusable retractable safety syringe
FR2753577B1 (en) * 1996-09-13 1999-01-08 Alsthom Cge Alcatel METHOD FOR MANUFACTURING A SEMICONDUCTOR OPTOELECTRONIC COMPONENT AND COMPONENT AND MATRIX OF COMPONENTS MANUFACTURED ACCORDING TO THIS METHOD
US5774487A (en) 1996-10-16 1998-06-30 Honeywell Inc. Filamented multi-wavelength vertical-cavity surface emitting laser
US5838705A (en) 1996-11-04 1998-11-17 Motorola, Inc. Light emitting device having a defect inhibition layer
US5784399A (en) 1996-12-19 1998-07-21 Xerox Corporation Polarization mode selection by distributed Bragg reflector in a quantum well laser
US5978408A (en) * 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US5914973A (en) * 1997-02-10 1999-06-22 Motorola, Inc. Vertical cavity surface emitting laser for high power operation and method of fabrication
US5903588A (en) 1997-03-06 1999-05-11 Honeywell Inc. Laser with a selectively changed current confining layer
US6078601A (en) * 1997-03-07 2000-06-20 Smith; David F. Method for controlling the operation of a laser
FR2761822B1 (en) * 1997-04-03 1999-05-07 Alsthom Cge Alcatel SEMICONDUCTOR LASER WITH SURFACE EMISSION
US6060743A (en) * 1997-05-21 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
US6055262A (en) * 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability
US5917848A (en) * 1997-07-17 1999-06-29 Motorola, Inc. Vertical cavity surface emitting laser with phase shift mask
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources
US5896408A (en) 1997-08-15 1999-04-20 Hewlett-Packard Company Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets
US6064683A (en) * 1997-12-12 2000-05-16 Honeywell Inc. Bandgap isolated light emitter
JPH11274645A (en) * 1998-03-20 1999-10-08 Toshiba Corp Semiconductor element and fabrication thereof
US6535541B1 (en) * 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6060683A (en) * 1998-09-22 2000-05-09 Direct Radiography Corp. Selective laser removal of dielectric coating
US6496621B1 (en) * 1998-09-22 2002-12-17 Digital Optics Corp. Fiber coupler system and associated methods for reducing back reflections
US6185241B1 (en) * 1998-10-29 2001-02-06 Xerox Corporation Metal spatial filter to enhance model reflectivity in a vertical cavity surface emitting laser
US6144682A (en) * 1998-10-29 2000-11-07 Xerox Corporation Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser
US6314118B1 (en) * 1998-11-05 2001-11-06 Gore Enterprise Holdings, Inc. Semiconductor device with aligned oxide apertures and contact to an intervening layer
WO2000057522A1 (en) * 1999-03-19 2000-09-28 Cielo Communications, Inc. Vcsel power monitoring system using plastic encapsulation techniques
JP2000277852A (en) * 1999-03-24 2000-10-06 Fuji Xerox Co Ltd Surface emitting semiconductor laser and manufacturing method
US6369403B1 (en) * 1999-05-27 2002-04-09 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer
US6339496B1 (en) * 1999-06-22 2002-01-15 University Of Maryland Cavity-less vertical semiconductor optical amplifier
US6411638B1 (en) * 1999-08-31 2002-06-25 Honeywell Inc. Coupled cavity anti-guided vertical-cavity surface-emitting laser
US6212312B1 (en) * 1999-09-17 2001-04-03 U.T. Battelle, Llc Optical multiplexer/demultiplexer using resonant grating filters
DE19961624B4 (en) * 1999-12-13 2005-01-20 Infineon Technologies Ag coupling arrangement
US6238944B1 (en) * 1999-12-21 2001-05-29 Xerox Corporation Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6410941B1 (en) * 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6427066B1 (en) * 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6650683B2 (en) * 2000-11-20 2003-11-18 Fuji Xerox Co, Ltd. Surface emitting semiconductor laser
US6542531B2 (en) * 2001-03-15 2003-04-01 Ecole Polytechnique Federale De Lausanne Vertical cavity surface emitting laser and a method of fabrication thereof
US6782019B2 (en) * 2001-08-16 2004-08-24 Applied Optoelectronics, Inc. VCSEL with heat-spreading layer
US6634771B2 (en) * 2001-08-24 2003-10-21 Densen Cao Semiconductor light source using a primary and secondary heat sink combination
US6656756B2 (en) * 2001-08-24 2003-12-02 Telecommunication Laboratories, Chunghwa Telecom Co., Ltd. Technique for a surface-emitting laser diode with a metal reflector
US6719446B2 (en) * 2001-08-24 2004-04-13 Densen Cao Semiconductor light source for providing visible light to illuminate a physical space
US7224001B2 (en) * 2001-08-24 2007-05-29 Densen Cao Semiconductor light source
US6634770B2 (en) * 2001-08-24 2003-10-21 Densen Cao Light source using semiconductor devices mounted on a heat sink
US6746885B2 (en) * 2001-08-24 2004-06-08 Densen Cao Method for making a semiconductor light source
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection

Similar Documents

Publication Publication Date Title
JP2004529487A5 (en)
US10460935B2 (en) Electronic device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing
KR102100415B1 (en) Tunneling device and method of manufacturing the same
EP1282918B1 (en) Charge carrier extracting transistor
EP1816682A3 (en) Phase change RAM including resistance element having diode function and methods of fabricating and operating the same
JP2007523481A5 (en)
WO2004088755A8 (en) Nanowhiskers with pn junctions and methods of fabricating thereof
JP2002110825A5 (en)
WO2006038150A3 (en) Semiconductor device and use thereof
WO2005112122A3 (en) Nanowire varactor diode and methods of making same
DE602004021465D1 (en) Non-volatile multi-bit memory cell and its manufacturing process
WO2008102718A1 (en) Semiconductor memory device
JP2017212425A5 (en)
ATE520152T1 (en) POWER SEMICONDUCTOR COMPONENT
JPWO2019145819A5 (en)
JP2009278112A (en) Thin film transistor
ATE518250T1 (en) METAL BASE NANOWIRE TRANSISTOR
CN105702721A (en) Novel asymmetric double-gate tunnelling field effect transistor
JP2004079887A5 (en)
TW200614432A (en) Device junction structure
KR890017766A (en) Semiconductor device with capacitor
JP2000133801A5 (en)
Guan et al. Characteristics of cylindrical surrounding-gate GaAsxSb1− x/InyGa1− yAs heterojunction tunneling field-effect transistors
Rivera et al. Schottky diodes based on electrospun polyaniline nanofibers: Effects of varying fiber diameter and doping level on device performance
CN109560128B (en) Tunneling field effect transistor