JP2004529378A - 多重レベルのマスキング解像度用の交番位相偏移マスキング - Google Patents

多重レベルのマスキング解像度用の交番位相偏移マスキング Download PDF

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Publication number
JP2004529378A
JP2004529378A JP2002572505A JP2002572505A JP2004529378A JP 2004529378 A JP2004529378 A JP 2004529378A JP 2002572505 A JP2002572505 A JP 2002572505A JP 2002572505 A JP2002572505 A JP 2002572505A JP 2004529378 A JP2004529378 A JP 2004529378A
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Prior art keywords
phase shift
width
layout
build
class
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JP2002572505A
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English (en)
Japanese (ja)
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JP2004529378A5 (https=
Inventor
シャオ−ポ ウ
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ニューメリカル テクノロジーズ インコーポレイテッド
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Publication of JP2004529378A publication Critical patent/JP2004529378A/ja
Publication of JP2004529378A5 publication Critical patent/JP2004529378A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Editing Of Facsimile Originals (AREA)
JP2002572505A 2001-03-08 2001-03-08 多重レベルのマスキング解像度用の交番位相偏移マスキング Pending JP2004529378A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/007413 WO2002073312A1 (en) 2001-03-08 2001-03-08 Alternating phase shift masking for multiple levels of masking resolution

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009114914A Division JP2009175764A (ja) 2009-05-11 2009-05-11 多重レベルのマスキング解像度用の交番位相偏移マスキング

Publications (2)

Publication Number Publication Date
JP2004529378A true JP2004529378A (ja) 2004-09-24
JP2004529378A5 JP2004529378A5 (https=) 2005-12-22

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ID=21742383

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JP2002572505A Pending JP2004529378A (ja) 2001-03-08 2001-03-08 多重レベルのマスキング解像度用の交番位相偏移マスキング

Country Status (3)

Country Link
EP (1) EP1370909A1 (https=)
JP (1) JP2004529378A (https=)
WO (1) WO2002073312A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787271B2 (en) 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US7083879B2 (en) 2001-06-08 2006-08-01 Synopsys, Inc. Phase conflict resolution for photolithographic masks
US6866971B2 (en) 2000-09-26 2005-03-15 Synopsys, Inc. Full phase shifting mask in damascene process
US6846596B2 (en) 2001-03-08 2005-01-25 Numerical Technologies, Inc. Alternating phase shift masking for multiple levels of masking resolution
US6635393B2 (en) 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6566019B2 (en) 2001-04-03 2003-05-20 Numerical Technologies, Inc. Using double exposure effects during phase shifting to control line end shortening
US6593038B2 (en) 2001-05-04 2003-07-15 Numerical Technologies, Inc. Method and apparatus for reducing color conflicts during trim generation for phase shifters
US6569583B2 (en) 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6852471B2 (en) 2001-06-08 2005-02-08 Numerical Technologies, Inc. Exposure control for phase shifting photolithographic masks
US7178128B2 (en) 2001-07-13 2007-02-13 Synopsys Inc. Alternating phase shift mask design conflict resolution
US6664009B2 (en) 2001-07-27 2003-12-16 Numerical Technologies, Inc. Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges
US6738958B2 (en) 2001-09-10 2004-05-18 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process composite gates
US6698007B2 (en) 2001-10-09 2004-02-24 Numerical Technologies, Inc. Method and apparatus for resolving coloring conflicts between phase shifters
US7122281B2 (en) 2002-02-26 2006-10-17 Synopsys, Inc. Critical dimension control using full phase and trim masks
US6605481B1 (en) 2002-03-08 2003-08-12 Numerical Technologies, Inc. Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit
US6704921B2 (en) 2002-04-03 2004-03-09 Numerical Technologies, Inc. Automated flow in PSM phase assignment
US6785879B2 (en) 2002-06-11 2004-08-31 Numerical Technologies, Inc. Model-based data conversion
US6821689B2 (en) 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
US20050271949A1 (en) * 2002-12-09 2005-12-08 Scott Corboy Reticle manipulations
EP2763061A1 (en) * 2013-02-01 2014-08-06 Dassault Systèmes Computer-implemented method for designing an assembly of objects in a three-dimensional scene of a system of computer-aided design

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5567553A (en) * 1994-07-12 1996-10-22 International Business Machines Corporation Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures
US5858580A (en) * 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
JP3307313B2 (ja) * 1998-01-23 2002-07-24 ソニー株式会社 パターン生成方法及びその装置

Also Published As

Publication number Publication date
EP1370909A1 (en) 2003-12-17
WO2002073312A1 (en) 2002-09-19

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