JP2004363337A - Cooling structure for semiconductor device - Google Patents

Cooling structure for semiconductor device Download PDF

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Publication number
JP2004363337A
JP2004363337A JP2003160175A JP2003160175A JP2004363337A JP 2004363337 A JP2004363337 A JP 2004363337A JP 2003160175 A JP2003160175 A JP 2003160175A JP 2003160175 A JP2003160175 A JP 2003160175A JP 2004363337 A JP2004363337 A JP 2004363337A
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Japan
Prior art keywords
semiconductor device
cooling
cooling structure
insulating
present
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JP2003160175A
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JP4207672B2 (en
Inventor
Makoto Imai
誠 今井
Yoshihide Arai
良英 新居
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Toyota Motor Corp
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Toyota Motor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cooling structure for semiconductor device which can ensure insulation properties. <P>SOLUTION: A semiconductor package 12 which contains a semiconductor device 10 and electrically conductive heat radiating plates 18, 20 which clamps the semiconductor device 10 from both sides thereof, is dipped in a cooling liquid 16 in a cooler 14. The semiconductor package 12 further includes portions 18-1, 20-1 of the heat sinks 18, 20, respectively, which are dipped in the cooling liquid 16, and an insulating member 22 which covers the semiconductor device 10. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体装置の冷却構造に関し、特に半導体装置を冷却媒体に浸漬させることにより半導体装置の冷却を行う構造に関する。
【０００２】
【従来の技術及び発明が解決しようとする課題】
従来の半導体装置の冷却構造の一例が特許文献１に開示されている。この従来の冷却構造においては、半導体素子を冷却液内に直接浸漬させることにより、半導体素子の両面から冷却を行っている。これによって、冷却効率の向上を図っている。しかしながら、この特許文献１に示す冷却構造においては、半導体素子、及び該素子と外部端子との間の導電部が冷却液内に直接浸漬されていることになる。したがって、冷却液として非絶縁性のものを使用することができず、使用可能な冷却液がコスト高となる絶縁性のものに限定されてしまうという問題点がある。そこで、本発明は、冷却媒体の絶縁性／非絶縁性に関係なく、確実に絶縁性を確保することができる半導体装置の冷却構造を提供することを目的とする。なお、その他にも特許文献２，３に示す半導体装置の冷却構造が開示されている。
【０００３】
【特許文献１】
特開昭５６−１３０９５５号公報
【特許文献２】
特開平９−２６０５８５号公報
【特許文献３】
特開２００１−３０８２３７号公報
【０００４】
【課題を解決するための手段】
このような目的を達成するために、第１の本発明に係る半導体装置の冷却構造は、半導体装置と、該半導体装置を両側から挟み込む導電性の放熱板と、を有する半導体パッケージが冷却器内の冷却媒体に浸漬されている半導体装置の冷却構造であって、前記半導体パッケージは、冷却媒体と接触し、放熱板の冷却媒体に浸漬されている部分及び半導体装置を覆う絶縁部を有することを特徴とする。
【０００５】
第２の本発明に係る半導体装置の冷却構造は、第１の本発明に記載の冷却構造であって、前記冷却媒体は、非絶縁性の媒体であることを特徴とする。
【０００６】
第３の本発明に係る半導体装置の冷却構造は、第２の本発明に記載の冷却構造であって、該冷却構造は、車両に搭載されていることを特徴とする。
【０００７】
第４の本発明に係る半導体装置の冷却構造は、第１〜３の本発明のいずれか１に記載の冷却構造であって、前記半導体パッケージは、冷却媒体に浸漬されている部分の表面に冷却フィンを有することを特徴とする。
【０００８】
第５の本発明に係る半導体装置の冷却構造は、第１〜３の本発明のいずれか１に記載の冷却構造であって、前記絶縁部の冷却媒体に浸漬されている部分の表面形状は、フィン形状を含むことを特徴とする。
【０００９】
【発明の実施の形態】
以下、本発明の実施の形態（以下実施形態という）を、図面に従って説明する。
【００１０】
図１は、本発明の実施形態に係る半導体装置の冷却構造の構成の概略を示す断面図である。本実施形態の冷却構造においては、半導体装置１０を含む半導体パッケージ１２が冷却器１４内の冷却液１６に浸漬されていることにより、半導体装置１０の両側から放熱が行われる。そして、半導体パッケージ１２は、放熱板１８，２０及び絶縁部材２２をさらに含んでいる。なお、本実施形態に係る半導体装置の冷却構造の適用例としては、ハイブリッド車両や電気自動車に搭載されている例が挙げられる。
【００１１】
半導体装置１０には、半導体素子（図示せず）が形成されている。放熱板１８，２０は、半導体装置１０をはんだ２４，２６をそれぞれ介して両側から挟み込んでいる。ここでの放熱板１８，２０は、導電性部材によって構成されており、半導体装置１０からの熱が伝導されるだけでなく、半導体装置１０と外部との間の電気的接続を行うための電極の役割も兼ねている。
【００１２】
冷却液１６は冷却器１４内を循環している。ここでの冷却液１６の具体例としては、非絶縁性のＬＬＣが挙げられる。そして、冷却器１４の上面１４−１には開口部が設けられている。半導体パッケージ１２は、この開口部を通されてから冷却器１４内に配設されることにより、冷却液１６に浸漬されることになる。
【００１３】
本実施形態においては、半導体装置１０が固体の絶縁部材２２によって覆われている。絶縁部材２２は冷却液１６と接触しており、この絶縁部材２２によって、半導体装置１０と冷却液１６との間の絶縁性が確保される。さらに、放熱板１８，２０における冷却液１６に浸漬されている部分１８−１，２０−１及び冷却器１４の開口部に位置する部分１８−２，２０−２も絶縁部材２２によって覆われている。これによって、放熱板１８，２０と冷却液１６との間の絶縁性、及び放熱板１８，２０と冷却器１４との間の絶縁性もそれぞれ確保される。ただし、放熱板１８，２０における外部接続端子として用いられる部分１８−３，２０−３のみは、絶縁部材２２によって覆われておらず、電気的接続を行うために外部に露出している。また、絶縁部材２２は、その上部に他の部分より全周囲に張り出したふた部２２−１を含む。絶縁部材２２のふた部２２−１と冷却器１４の開口部の縁部１４−２とが全周に渡って当接している状態で、絶縁部材２２が冷却器１４の上面１４−１にて固定されている。これによって、半導体パッケージ１２が冷却器１４に固定されるとともに、冷却器１４内の密閉性が保たれる。なお、絶縁部材２０の具体例としては、セラミック、樹脂等が挙げられる。
【００１４】
このような構成によって、半導体装置１０内の発熱源１０−１にて発生した熱が半導体装置１０の両面に設けられた放熱板１８，２０に伝導される。そして、半導体装置１０の両面と略平行な表面である絶縁部材２２の放熱面２２−２，２２−３から冷却液１６へ放熱が行われる。これによって、半導体装置１０の両面側から放熱が行われる。
【００１５】
以上説明したように、本実施形態によれば、放熱板１８，２０における冷却液１６に浸漬されている部分１８−１，２０−１及び半導体装置１０が絶縁部材２０によって覆われている。これによって、冷却液１６の絶縁性／非絶縁性に関係なく、半導体装置１０及び放熱板１８，２０の絶縁性を確実に確保することができる。そして、冷却液１６として非絶縁性のものを用いることができ、コスト低減を実現することができるとともに、半導体装置１０と冷却液１６との間の絶縁性及び放熱板１８，２０と冷却液１６との間の絶縁性を確実に確保することができる。なお、本実施形態の冷却構造をハイブリッド車両や電気自動車に搭載する場合は、非絶縁性の冷却液１６を用いることにより、コストの低減と絶縁性の確保を両立させることは特に有効である。
【００１６】
また、本実施形態においては、図２の断面図に示すように、半導体パッケージ１２は、冷却液１６に浸漬されている部分における絶縁部材２２の放熱面２２−２，２２−３に冷却フィン２８をさらに備えていてもよい。冷却フィン２８は、その放熱面が冷却液１６が流れる方向と略平行になるように配設されている。なお、ここでの冷却フィン２８の一例としては、熱伝導性の優れたアルミニウム等の金属製のフィンが用いられる。
【００１７】
図２に示す構成によれば、絶縁部材２２の放熱面２２−２，２２−３に冷却フィン２８が設けられていることにより、半導体パッケージ１２における冷却液１６と接触している放熱面の表面積を増大させることができる。したがって、半導体装置１０の冷却性能を向上させることができる。
【００１８】
さらに、冷却フィン２８において、半導体装置１０内の発熱源１０−１に近い位置に配設されているフィンについては、フィン間ピッチが他のフィンより短く設定されていることが好ましい。例えば、図３の断面図に示すように、半導体装置１０内の発熱源１０−１から所定値以下の距離に配設されているフィン２８−１については、他のフィンよりフィン間ピッチが短く設定されている。これによって、フィン２８−１間を通過する冷却液１６の流路が他のフィン間における流路より狭くなるため、フィン２８−１間を通過する冷却液１６の流速が他のフィン間における流速より増大する。したがって、高い放熱性が必要とされる部分については冷却液１６の流速を増大させることができるとともに、冷却器１４全体では低い圧力損失を実現することができる。したがって、半導体装置１０の冷却性能をさらに向上させることができる。
【００１９】
なお、冷却フィン２８については、金属製のフィンを用いる代わりに、図４の断面図に示すように、絶縁部材２２と一体成形することにより、絶縁部材２２の冷却液１６に浸漬されている部分における放熱面２２−２，２２−３の形状がフィン形状を含むようにしてもよい。これによって、冷却フィン２８を有する半導体パッケージ１２の成型が容易となる。
【００２０】
以上の説明においては、冷却液１６が非絶縁性である場合について説明した。ただし、本発明における冷却液としては、絶縁性のものも使用することができる。ただし、非絶縁性の冷却液を使用したほうがコストを低減することができる。
【００２１】
以上、本発明の実施の形態について説明したが、本発明はこうした実施の形態に何等限定されるものではなく、本発明の技術思想を逸脱しない範囲内において、種々なる形態で実施し得ることは勿論である。
【００２２】
【発明の効果】
以上説明したように、本発明によれば、半導体パッケージは、冷却媒体と接触し、放熱板の冷却媒体に浸漬されている部分及び半導体装置を覆う絶縁部を有することにより、確実に絶縁性を確保することができる。
【図面の簡単な説明】
【図１】本発明の実施形態に係る半導体装置の冷却構造の構成の概略を示す断面図である。
【図２】本発明の実施形態に係る半導体装置の冷却構造の変形例の概略を示す断面図である。
【図３】本発明の実施形態に係る半導体装置の冷却構造の変形例の概略を示す断面図である。
【図４】本発明の実施形態に係る半導体装置の冷却構造の変形例の概略を示す断面図である。
【符号の説明】
１０ 半導体装置、１２ 半導体パッケージ、１４ 冷却器、１６ 冷却液、１８，２０ 放熱板、２２ 絶縁部材、２４，２６ はんだ、２８ 冷却フィン。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device cooling structure, and more particularly to a structure for cooling a semiconductor device by immersing the semiconductor device in a cooling medium.
[0002]
Problems to be solved by the prior art and the invention
Patent Document 1 discloses an example of a conventional cooling structure for a semiconductor device. In this conventional cooling structure, the semiconductor element is cooled from both sides by directly immersing the semiconductor element in a cooling liquid. Thereby, the cooling efficiency is improved. However, in the cooling structure disclosed in Patent Document 1, the semiconductor element and the conductive portion between the element and the external terminal are directly immersed in the cooling liquid. Therefore, a non-insulating coolant cannot be used as the coolant, and there is a problem that usable coolant is limited to an insulative coolant which increases costs. Therefore, an object of the present invention is to provide a cooling structure of a semiconductor device that can reliably ensure insulation regardless of insulating / non-insulating properties of a cooling medium. In addition, the cooling structure of the semiconductor device disclosed in Patent Documents 2 and 3 is disclosed.
[0003]
[Patent Document 1]
JP-A-56-130955 [Patent Document 2]
Japanese Patent Application Laid-Open No. 9-260585 [Patent Document 3]
JP 2001-308237 A
[Means for Solving the Problems]
In order to achieve such an object, a cooling structure of a semiconductor device according to a first aspect of the present invention is a semiconductor device having a semiconductor package having a semiconductor device and a conductive heat sink sandwiching the semiconductor device from both sides. A cooling structure for a semiconductor device immersed in a cooling medium, wherein the semiconductor package has a portion of the heat sink that is in contact with the cooling medium and is immersed in the cooling medium and an insulating portion that covers the semiconductor device. Features.
[0005]
A cooling structure for a semiconductor device according to a second aspect of the present invention is the cooling structure according to the first aspect of the present invention, wherein the cooling medium is a non-insulating medium.
[0006]
A cooling structure for a semiconductor device according to a third aspect of the present invention is the cooling structure according to the second aspect of the present invention, wherein the cooling structure is mounted on a vehicle.
[0007]
A cooling structure for a semiconductor device according to a fourth aspect of the present invention is the cooling structure according to any one of the first to third aspects of the present invention, wherein the semiconductor package is provided on a surface of a part immersed in a cooling medium. It has a cooling fin.
[0008]
A cooling structure for a semiconductor device according to a fifth aspect of the present invention is the cooling structure according to any one of the first to third aspects of the present invention, wherein a surface shape of a part of the insulating part immersed in a cooling medium has a surface shape. And a fin shape.
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention (hereinafter, referred to as embodiments) will be described with reference to the drawings.
[0010]
FIG. 1 is a cross-sectional view schematically showing a configuration of a cooling structure of a semiconductor device according to an embodiment of the present invention. In the cooling structure of the present embodiment, heat is radiated from both sides of the semiconductor device 10 by immersing the semiconductor package 12 including the semiconductor device 10 in the cooling liquid 16 in the cooler 14. The semiconductor package 12 further includes heat radiating plates 18 and 20 and an insulating member 22. In addition, as an application example of the cooling structure of the semiconductor device according to the present embodiment, there is an example in which the cooling structure is mounted on a hybrid vehicle or an electric vehicle.
[0011]
A semiconductor element (not shown) is formed in the semiconductor device 10. The heat radiating plates 18 and 20 sandwich the semiconductor device 10 from both sides via solders 24 and 26, respectively. Here, the heat radiating plates 18 and 20 are made of a conductive member, and not only conduct heat from the semiconductor device 10 but also form electrodes for making an electrical connection between the semiconductor device 10 and the outside. Also serves as a role.
[0012]
The cooling liquid 16 is circulating in the cooler 14. Here, a specific example of the cooling liquid 16 is a non-insulating LLC. An opening is provided on the upper surface 14-1 of the cooler 14. The semiconductor package 12 is immersed in the cooling liquid 16 by being disposed in the cooler 14 after passing through the opening.
[0013]
In the present embodiment, the semiconductor device 10 is covered with a solid insulating member 22. The insulating member 22 is in contact with the coolant 16, and the insulating member 22 ensures insulation between the semiconductor device 10 and the coolant 16. Further, the portions 18-1 and 20-1 of the heat sinks 18 and 20 which are immersed in the coolant 16 and the portions 18-2 and 20-2 located at the openings of the cooler 14 are also covered by the insulating member 22. I have. Thereby, the insulation between the heat radiating plates 18 and 20 and the coolant 16 and the insulation between the heat radiating plates 18 and 20 and the cooler 14 are also ensured. However, only the portions 18-3 and 20-3 used as external connection terminals in the heatsinks 18 and 20 are not covered with the insulating member 22 and are exposed to the outside for electrical connection. In addition, the insulating member 22 includes a lid portion 22-1 that protrudes from the other portion to the entire periphery at the upper portion thereof. The insulating member 22 is fixed on the upper surface 14-1 of the cooler 14 with the lid 22-1 of the insulating member 22 and the edge 14-2 of the opening of the cooler 14 abutting over the entire circumference. Have been. As a result, the semiconductor package 12 is fixed to the cooler 14, and the hermeticity inside the cooler 14 is maintained. Note that specific examples of the insulating member 20 include ceramics and resins.
[0014]
With such a configuration, heat generated by the heat source 10-1 in the semiconductor device 10 is conducted to the heat radiating plates 18 and 20 provided on both surfaces of the semiconductor device 10. Then, heat is radiated to the coolant 16 from the heat radiating surfaces 22-2 and 22-3 of the insulating member 22, which are surfaces substantially parallel to both surfaces of the semiconductor device 10. Thus, heat is radiated from both sides of the semiconductor device 10.
[0015]
As described above, according to the present embodiment, the portions 18-1 and 20-1 of the heat sinks 18 and 20 immersed in the coolant 16 and the semiconductor device 10 are covered by the insulating member 20. Thereby, regardless of the insulating property / non-insulating property of the cooling liquid 16, the insulating properties of the semiconductor device 10 and the heat radiating plates 18 and 20 can be reliably ensured. In addition, a non-insulating coolant can be used as the coolant 16, which can reduce the cost, as well as the insulating property between the semiconductor device 10 and the coolant 16 and the heat radiation plates 18, 20 and the coolant 16. And the insulation between them can be reliably ensured. When the cooling structure of the present embodiment is mounted on a hybrid vehicle or an electric vehicle, it is particularly effective to use the non-insulating cooling liquid 16 to achieve both cost reduction and ensuring insulation.
[0016]
In the present embodiment, as shown in the cross-sectional view of FIG. 2, the semiconductor package 12 is provided with cooling fins 28 on the heat radiating surfaces 22-2 and 22-3 of the insulating member 22 in the part immersed in the cooling liquid 16. May be further provided. The cooling fins 28 are disposed such that the heat radiation surface is substantially parallel to the direction in which the cooling liquid 16 flows. Here, as an example of the cooling fins 28, metal fins such as aluminum having excellent heat conductivity are used.
[0017]
According to the configuration shown in FIG. 2, since the cooling fins 28 are provided on the heat radiating surfaces 22-2 and 22-3 of the insulating member 22, the surface area of the heat radiating surface of the semiconductor package 12 that is in contact with the cooling liquid 16 is provided. Can be increased. Therefore, the cooling performance of the semiconductor device 10 can be improved.
[0018]
Further, in the cooling fins 28, it is preferable that the pitch between the fins of the cooling fins disposed closer to the heat source 10-1 in the semiconductor device 10 be shorter than the other fins. For example, as shown in the cross-sectional view of FIG. 3, the fin 28-1 disposed at a distance equal to or less than a predetermined value from the heat source 10-1 in the semiconductor device 10 has a shorter fin pitch than the other fins. Is set. Accordingly, the flow path of the coolant 16 passing between the fins 28-1 is narrower than the flow path of the other fins. More. Therefore, the flow rate of the cooling liquid 16 can be increased in a portion requiring high heat radiation, and a low pressure loss can be realized in the entire cooler 14. Therefore, the cooling performance of the semiconductor device 10 can be further improved.
[0019]
The cooling fins 28 are formed integrally with the insulating member 22 as shown in the sectional view of FIG. 4 instead of using metal fins, so that the portion of the insulating member 22 that is immersed in the coolant 16 is cooled. The shape of the heat radiation surfaces 22-2 and 22-3 may include a fin shape. This facilitates the molding of the semiconductor package 12 having the cooling fins 28.
[0020]
In the above description, the case where the cooling liquid 16 is non-insulating has been described. However, an insulating liquid can be used as the cooling liquid in the present invention. However, using a non-insulating coolant can reduce the cost.
[0021]
As described above, the embodiments of the present invention have been described, but the present invention is not limited to these embodiments at all, and can be implemented in various forms without departing from the technical idea of the present invention. Of course.
[0022]
【The invention's effect】
As described above, according to the present invention, the semiconductor package reliably contacts the cooling medium, and has the insulating portion that covers the semiconductor device and the portion of the heat sink that is immersed in the cooling medium. Can be secured.
[Brief description of the drawings]
FIG. 1 is a sectional view schematically showing a configuration of a cooling structure of a semiconductor device according to an embodiment of the present invention.
FIG. 2 is a sectional view schematically showing a modification of the cooling structure of the semiconductor device according to the embodiment of the present invention.
FIG. 3 is a sectional view schematically showing a modification of the cooling structure of the semiconductor device according to the embodiment of the present invention.
FIG. 4 is a sectional view schematically showing a modification of the cooling structure of the semiconductor device according to the embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Semiconductor device, 12 Semiconductor package, 14 Cooler, 16 Coolant, 18, 20 Heat sink, 22 Insulation member, 24, 26 Solder, 28 Cooling fin.

Claims (5)

半導体装置と、該半導体装置を両側から挟み込む導電性の放熱板と、を有する半導体パッケージが冷却器内の冷却媒体に浸漬されている半導体装置の冷却構造であって、
前記半導体パッケージは、冷却媒体と接触し、放熱板の冷却媒体に浸漬されている部分及び半導体装置を覆う絶縁部を有することを特徴とする半導体装置の冷却構造。A semiconductor device, and a conductive heat dissipation plate sandwiching the semiconductor device from both sides, a semiconductor device having a semiconductor package having a cooling structure immersed in a cooling medium in a cooler,
The cooling structure of a semiconductor device, wherein the semiconductor package has a portion that is in contact with the cooling medium and is immersed in the cooling medium of the heat sink and an insulating portion that covers the semiconductor device. 請求項１に記載の半導体装置の冷却構造であって、
前記冷却媒体は、非絶縁性の媒体であることを特徴とする半導体装置の冷却構造。The cooling structure for a semiconductor device according to claim 1, wherein:
The cooling structure for a semiconductor device, wherein the cooling medium is a non-insulating medium. 請求項２に記載の半導体装置の冷却構造であって、
該冷却構造は、車両に搭載されていることを特徴とする半導体装置の冷却構造。The cooling structure for a semiconductor device according to claim 2, wherein:
A cooling structure for a semiconductor device, wherein the cooling structure is mounted on a vehicle. 請求項１〜３のいずれか１に記載の半導体装置の冷却構造であって、
前記半導体パッケージは、冷却媒体に浸漬されている部分の表面に冷却フィンを有することを特徴とする半導体装置の冷却構造。A cooling structure for a semiconductor device according to claim 1, wherein:
The cooling structure of a semiconductor device, wherein the semiconductor package has a cooling fin on a surface of a portion immersed in a cooling medium. 請求項１〜３のいずれか１に記載の半導体装置の冷却構造であって、
前記絶縁部の冷却媒体に浸漬されている部分の表面形状は、フィン形状を含むことを特徴とする半導体装置の冷却構造。A cooling structure for a semiconductor device according to claim 1, wherein:
The surface structure of a portion of the insulating part immersed in a cooling medium includes a fin shape.
JP2003160175A 2003-06-05 2003-06-05 Semiconductor device cooling structure Expired - Fee Related JP4207672B2 (en)

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JP2007053295A (en) * 2005-08-19 2007-03-01 Hitachi Ltd Semiconductor device, power conversion apparatus and on-board electrical-equipment system
JP2009283766A (en) * 2008-05-23 2009-12-03 Toyota Motor Corp Semiconductor device
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JP2013251569A (en) * 2013-08-02 2013-12-12 Hitachi Ltd Power conversion device
WO2015165800A1 (en) * 2014-04-30 2015-11-05 Conti Temic Microelectronic Gmbh Circuit arrangement, and current transformer having a circuit arrangement

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JP2000349207A (en) * 1999-06-02 2000-12-15 Denso Corp Method and device for mounting semiconductor device
JP2001308237A (en) * 2000-04-19 2001-11-02 Denso Corp Both-face cooling type semiconductor card module and refrigerant indirect cooling type semiconductor device using the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007053295A (en) * 2005-08-19 2007-03-01 Hitachi Ltd Semiconductor device, power conversion apparatus and on-board electrical-equipment system
JP2009283766A (en) * 2008-05-23 2009-12-03 Toyota Motor Corp Semiconductor device
WO2012120672A1 (en) * 2011-03-10 2012-09-13 トヨタ自動車株式会社 Cooler
JP5621908B2 (en) * 2011-03-10 2014-11-12 トヨタ自動車株式会社 Cooler
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JP2013251569A (en) * 2013-08-02 2013-12-12 Hitachi Ltd Power conversion device
WO2015165800A1 (en) * 2014-04-30 2015-11-05 Conti Temic Microelectronic Gmbh Circuit arrangement, and current transformer having a circuit arrangement
CN106575640A (en) * 2014-04-30 2017-04-19 大陆泰密克微电子有限责任公司 Circuit arrangement, and current transformer having a circuit arrangement
US10312179B2 (en) 2014-04-30 2019-06-04 Conti Temic Microelectronic Gmbh Circuit arrangement, and current transformer
CN106575640B (en) * 2014-04-30 2019-11-05 大陆泰密克微电子有限责任公司 Line unit, the current converter with line unit

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