JP2004349614A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2004349614A
JP2004349614A JP2003147551A JP2003147551A JP2004349614A JP 2004349614 A JP2004349614 A JP 2004349614A JP 2003147551 A JP2003147551 A JP 2003147551A JP 2003147551 A JP2003147551 A JP 2003147551A JP 2004349614 A JP2004349614 A JP 2004349614A
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Japan
Prior art keywords
insulating plate
plate
semiconductor device
resin case
semiconductor chip
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JP2003147551A
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Japanese (ja)
Inventor
Masaki Goto
正喜 後藤
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2003147551A priority Critical patent/JP2004349614A/en
Publication of JP2004349614A publication Critical patent/JP2004349614A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of suppressing a stress applied to an insulating plate. <P>SOLUTION: A resin case 4 presses an extension piece 6a of a metal film 6 provided in an insulating plate 1 against a heat sink 3 by screwing of a bolt 10. For this reason, another surface of the insulating plate 1 is closely adhered to a surface of the heat sink 3 via the metal film 6 and a grease layer 9. At this point, a stress pressing to the heat sink 3 side is not directly applied to the insulating plate 1. As a result, since the stress applied to the insulating plate 1 is decreased, cracks are hard to occur in the insulating plate 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、信頼性の高い放熱構造や組立構造を有する半導体装置に関するものである。
【０００２】
【従来の技術】
従来、半導体装置として、半導体チップを搭載した絶縁板を放熱板に取り付けた放熱構造がある。この種の半導体装置は、半導体チップを搭載した絶縁板と、半導体チップの周囲を取り囲む樹脂ケースと、この樹脂ケースに充填した樹脂であって半導体チップと樹脂ケースとの間を埋める充填樹脂と、絶縁板を取り付けた放熱板とを有している。そして、絶縁板を放熱板に取り付ける手段として、樹脂ケースを貫通したボルトの先端部を放熱板に形成したボルト穴にねじ込むことにより、樹脂ケースを用いて絶縁板を放熱板に押し付けている。また、樹脂ケースには、絶縁板の放熱板側でない面から放熱板の方向へ、絶縁板を押し付ける突起が設けてある（たとえば、特許文献１参照）。
【０００３】
【特許文献１】
特開平８−２３６６６７号公報
【０００４】
【発明が解決しようとする課題】
しかしながら、上記従来の技術によれば、樹脂ケース（突起）が絶縁板を放熱板側に押し付ける構成である。このため、特に放熱板が反り曲がっている場合や、絶縁板に向く放熱板の面に突起が生じている場合では、絶縁板に反る力が加わって当該絶縁板に割れが生じやすいという問題があった。また、放熱板の反りを一定量以下にするには部材加工費が増大するという別の問題が生じる。
【０００５】
また、上記従来の技術では、絶縁板と放熱板との間にグリース層が設けてある。このグリース層は、シリコーングリースが主に用いられ、絶縁板と放熱板との隙間を埋めて放熱性を向上する目的で設けてある。しかし、シリコーングリースは、半田などに比較して熱伝導率が低い。このため、シリコーングリースに多量の良熱伝導性粉末を混入することが考えられるが、良熱伝導性粉末を混入したシリコーングリースは硬度が増してしまう。この結果、上記のごとく絶縁板に生じる応力が大きくなり絶縁板に割れが生じやすくなるという問題がある。このように、絶縁板に応力が加わると、半導体チップの放熱性を向上することも難しくなり、半導体チップの温度上昇によって半導体チップの寿命が短くなるので、半導体装置の信頼性を低下させることになる。一方、放熱性を向上する他の手段としては、半導体チップサイズを大きくすることが考えられるが、これでは半導体装置の小型化を図ることができなくなる。
【０００６】
さらに、上記従来の技術では、樹脂ケースに設けた突起をリング状にして半導体チップを囲むようにすることで、樹脂ケースの外への充填樹脂の漏れを防ぐようにしている。しかし、全ての突起を絶縁板に押し付けることは難しく、特に上述のごとく絶縁板に反る力が加わった場合では顕著である。この結果、充填樹脂を堰き止められず当該充填樹脂が樹脂ケース外に漏れる問題があり、信頼性の高い組立構造が得られなかった。
【０００７】
本発明は、上記に鑑みてなされたものであって、絶縁板に加わる応力を抑えることができ、また、信頼性の高い組立構造を得ることができる半導体装置を得ることを目的とする。
【０００８】
【課題を解決するための手段】
上述した課題を解決し、目的を達成するために、本発明にかかる半導体装置にあっては、半導体チップを一方の面に搭載した絶縁板と、前記絶縁板の他方の面に設けてあり当該絶縁板の周縁より外側に延在する延在片を有した熱伝導性支持板と、前記絶縁板の他方の面側に設けた放熱板と、前記熱伝導性支持板の延在片を前記放熱板に向けて押し付ける押圧部材とを備えたことを特徴とする。
【０００９】
この発明によれば、押圧部材が絶縁板に設けた熱導電性支持板の延在片を放熱板に向けて押し付け、熱伝導性支持板を介して絶縁板の他方の面が放熱板の面に密着する。このとき、絶縁板には、押付部材によって押し付ける応力が直接加わらない。その結果、絶縁板に加わる応力が低減して絶縁板に割れが発生し難くなる。
【００１０】
【発明の実施の形態】
以下、本発明にかかる半導体装置の実施の形態を図面に基づいて詳細に説明する。なお、この実施の形態によりこの発明が限定されるものではない。
【００１１】
図１は本発明の実施の形態にかかる半導体装置を示す断面図である。図１に示すように、半導体装置は、絶縁板１と、半導体チップ２と、放熱板３と、押圧部材としての樹脂ケース４とを主に有している。
【００１２】
絶縁板１は、アルミナ、窒化アルミニウムまたは窒化ケイ素などの材料によって板状に形成してある。絶縁板１には、一方の面（図１における上面）に金属膜５を部分的に設けてある。また、絶縁板１には、他方の面（図１における下面）に熱伝導性支持板としての金属膜６を設けてある。金属膜６は、絶縁板１の面積より大きい面積を有した板体であり、絶縁板１の周縁より外側に延在した延在片６ａを有している。本実施の形態では、金属膜６が絶縁板１の他方の面の全面を覆い、延在片６ａが当該絶縁板１の全周縁より外側に一体に延在している。また、延在片６ａには、絶縁板１を囲む態様で無端状の凹溝６ｂが設けてある。
【００１３】
半導体チップ２は、たとえば電力用半導体装置に用いられるパワー半導体スイッチング素子などである。この半導体チップ２は、絶縁板１の金属膜５に対してはんだ７にて接合してある。また、半導体チップ２の電極は、アルミニウムあるいは銅などのワイヤ８によって当該半導体チップ２を接合していない他の金属膜５に接続してある。
【００１４】
放熱板３は、絶縁板１の他方の面側に設けてある。絶縁板１は、銅やアルミニウムなどからなる板体であり、絶縁板１に設けた金属膜６の面積よりも大きい面積を有している。この放熱板３は、自身の面を金属膜６の面に対面する形態で設けてある。すなわち、放熱板３は、熱伝導性支持板としての金属膜６の延在片６ａの周縁より外側に延在している。
【００１５】
放熱板３と金属膜６との間には、グリース層９を介在してある。グリース層９は、シリコーングリースなどの熱伝導部材からなる。このグリース層９は、熱伝導性を向上するために多量の良熱伝導性粉末を混入してある。また、グリース層９は、取り扱い性を向上するためにシリコーンシートなどシート状のものを用いることもできる。
【００１６】
樹脂ケース４は、絶縁板１に搭載した半導体チップ２の周囲を囲む枠体をなしている。具体的に樹脂ケース４である枠体は、半導体チップ２を搭載した絶縁板１の周囲を囲む態様に形成してある。また、枠体には、熱伝導性支持板としての金属膜６の延在片６ａに設けた凹溝６ｂに挿通係合する態様で無端状の突起４ａを設けてある。このように構成した樹脂ケース４は、金属膜６の延在片６ａを放熱板３に向けて押し付けるようにして当該放熱板３に取り付けてある。
【００１７】
樹脂ケース４を放熱板３に取り付ける手段としては、本実施の形態ではボルト１０を用いている。樹脂ケース４には、ボルト１０を挿通する挿通穴４ｂを設けてある。また、放熱板３には、ボルト１０を螺着するボルト穴３ａを設けてある。すなわち、樹脂ケース４の挿通穴４ｂにボルト１０の先端部を挿通して、当該先端部を放熱板３のボルト穴３ａに螺着することにより放熱板３に樹脂ケース４が取り付けられる。
【００１８】
また、放熱板３に取り付けた樹脂ケース４の枠体内には、充填樹脂１１が充填してある。充填樹脂１１は、半導体チップ２を覆うことで当該半導体チップ２の接続部分の絶縁性を良くしている。
【００１９】
上述した半導体装置を組み立てるには、絶縁板１に半導体チップ２を搭載しておき、当該絶縁板１の他方の面に設けた金属膜６に対して、グリース層９を介して放熱板３を対面させる。この状態で、絶縁板１の一方の面側から樹脂ケース４を被せるようにして金属膜６の凹溝６ｂに対して樹脂ケース４の突起４ａを挿通係合する。そして、上記のごとくボルト１０によって樹脂ケース４を放熱板３に取り付ける。その後、樹脂ケース４の枠体内に充填樹脂１１を充填する。
【００２０】
このように構成した半導体素子では、ボルト１０の螺着によって押圧部材としての樹脂ケース４が絶縁板１に設けた熱導電性支持板としての金属膜６の延在片６ａを放熱板３に向けて押し付けることになる。このため、金属膜６およびグリース層９を介して絶縁板１の他方の面が放熱板３の面に密着する。このとき、絶縁板１には、樹脂ケース４によって押し付ける応力が直接加わらない。その結果、絶縁板１に加わる応力が低減するため、当該絶縁板１に割れが発生し難くなる。
【００２１】
また、絶縁板１に押し付ける力が直接加わらないので、放熱板３に反りが生じていた場合や、絶縁板１に向く放熱板３の面に突起が生じている場合でも絶縁板１に加わる応力が低減するため、当該絶縁板１に割れが発生し難くなる。なた、放熱板３の反りを一定量以下にするための部材加工が必要ないので部材加工費を低減することができる。
【００２２】
また、金属膜６が絶縁板１の周縁より外側に延在した延在片６ａを有しているため、半導体チップ２で発生した熱が、延在片６ａを介して拡散し易くなるため、放熱性を向上することができる。
【００２３】
また、グリース層９は、放熱板３と金属膜６との隙間や、金属膜６の面の微小な凹凸による隙間を埋めて放熱性を向上する。そして、上述したようにグリース層９に多量の良熱伝導性粉末を混入すれば放熱性がさらに向上する。ここで、良熱伝導性粉末を混入したグリース層９は硬度が増し、絶縁板１に加わる応力が大きくなることが懸念される。しかしながら、本半導体装置では、上述のごとく絶縁板１に押し付ける力が直接加わらないので、グリース層９の硬度が増した場合でも絶縁板に生じる応力が大きくなることがなく絶縁板に割れが生じ難くなる。
この結果、半導体チップ２の放熱性が向上して半導体チップ２の寿命が長くなるので、半導体装置の信頼性を向上することができる。さらに、半導体チップ２の放熱性が向上することから半導体チップサイズを小さくすることが可能であり、半導体装置の小型化を図ることができる。
【００２４】
また、上述した半導体装置では、熱伝導性支持板としての金属膜６の延在片６ａに無端状の凹溝６ｂを設け、延在片６ａを押し込む押圧部材としての樹脂ケース４に前記凹溝６ｂ挿通係合する無端状の突起４ａを設けているので、樹脂ケース４が半導体チップ２を搭載した絶縁板１を確実に囲むことが可能である。この結果、樹脂ケース４の枠体内に充填した充填樹脂１１が樹脂ケース４の外の漏れる事態を確実に防ぐことができる。また、放熱板３に反りが生じても、凹溝６ｂへの突起４ａの挿通が外れないので樹脂ケース４の外への充填樹脂１１の漏れを防ぐことができる。
【００２５】
また、凹溝６ｂと突起４ａとの係合により、絶縁板１と樹脂ケース４との位置合わせ容易に行うことができる。さらに、放熱板３に樹脂ケース４をボルト１０で取り付けることにより、絶縁板１と放熱板３との相対位置を容易に合わせることができる。従前の半導体装置では、絶縁板１と樹脂ケース４との位置合わせを行うために、樹脂ケース４に絶縁板１を囲んで嵌め込むように樹脂ケース４を厚くして凹部を形成している。本半導体装置では、凹溝６ｂと突起４ａとの係合によって絶縁板１と樹脂ケース４との位置合わせを行うので上記厚みおよび凹部が必要なくなる。この結果、樹脂ケース４の樹脂量を少なくすることができ、軽量かつ安価な半導体素子を得ることができる。
【００２６】
【発明の効果】
以上説明したとおり、この発明によれば、押圧部材が絶縁板に設けた熱導電性支持板の延在片を放熱板に向けて押し付けて、熱伝導性支持板を介して絶縁板の他方の面が放熱板の面に密着させている。これにより、放熱板側に絶縁板を押し付ける応力が絶縁板に直接加わらないので、絶縁板に加わる応力を抑えて絶縁板の割れを防ぐことができるという効果を奏する。
【図面の簡単な説明】
【図１】本発明の実施の形態にかかる半導体装置を示す断面図である。
【符号の説明】
１ 絶縁板、２ 半導体チップ、３ 放熱板、３ａ ボルト穴、４ 樹脂ケース（押圧部材）、４ａ 突起、４ｂ 挿通穴、５ 金属膜、６ 金属膜（熱伝導性支持板）、６ａ 延在片、６ｂ 凹溝、７ はんだ、８ ワイヤ、９ グリース層、１０ ボルト、１１ 充填樹脂。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device having a highly reliable heat dissipation structure or assembly structure.
[0002]
[Prior art]
BACKGROUND ART Conventionally, as a semiconductor device, there is a heat dissipation structure in which an insulating plate on which a semiconductor chip is mounted is attached to a heat dissipation plate. This type of semiconductor device includes an insulating plate on which a semiconductor chip is mounted, a resin case surrounding the periphery of the semiconductor chip, a resin filled in the resin case, and a filling resin filling the space between the semiconductor chip and the resin case; A heat sink to which an insulating plate is attached. Then, as a means for attaching the insulating plate to the heat radiating plate, the tip of a bolt penetrating the resin case is screwed into a bolt hole formed in the heat radiating plate, thereby pressing the insulating plate against the heat radiating plate using the resin case. Further, the resin case is provided with a protrusion for pressing the insulating plate from the surface of the insulating plate that is not on the heat radiating plate side toward the heat radiating plate (for example, see Patent Document 1).
[0003]
[Patent Document 1]
JP-A-8-236667
[Problems to be solved by the invention]
However, according to the above-described conventional technique, the resin case (projection) is configured to press the insulating plate against the heat sink. For this reason, in particular, when the heat sink is bent or when a projection is formed on the surface of the heat sink facing the insulating plate, the insulating plate is likely to be cracked due to the warping force applied thereto. was there. In addition, another problem arises in that the member processing cost increases to reduce the warpage of the heat sink to a certain amount or less.
[0005]
Further, in the above-described conventional technique, a grease layer is provided between the insulating plate and the heat sink. This grease layer is mainly made of silicone grease, and is provided for the purpose of filling gaps between the insulating plate and the heat sink to improve heat dissipation. However, silicone grease has a lower thermal conductivity than solder or the like. For this reason, it is conceivable to mix a large amount of the good heat conductive powder into the silicone grease. However, the hardness of the silicone grease mixed with the good heat conductive powder increases. As a result, there is a problem that the stress generated in the insulating plate is increased as described above, and the insulating plate is easily cracked. As described above, when stress is applied to the insulating plate, it is also difficult to improve the heat dissipation of the semiconductor chip, and the temperature rise of the semiconductor chip shortens the life of the semiconductor chip, thereby reducing the reliability of the semiconductor device. Become. On the other hand, as another means for improving heat dissipation, it is conceivable to increase the size of a semiconductor chip. However, this does not make it possible to reduce the size of the semiconductor device.
[0006]
Further, in the above-mentioned conventional technique, the protrusion provided on the resin case is formed in a ring shape so as to surround the semiconductor chip, thereby preventing leakage of the filled resin to the outside of the resin case. However, it is difficult to press all the projections against the insulating plate, particularly when the warping force is applied to the insulating plate as described above. As a result, there was a problem that the filled resin could not be blocked and the filled resin leaked out of the resin case, and a highly reliable assembly structure could not be obtained.
[0007]
The present invention has been made in view of the above, and an object of the present invention is to provide a semiconductor device capable of suppressing a stress applied to an insulating plate and obtaining a highly reliable assembly structure.
[0008]
[Means for Solving the Problems]
In order to solve the above-described problems and achieve the object, in a semiconductor device according to the present invention, an insulating plate having a semiconductor chip mounted on one surface, and provided on the other surface of the insulating plate, A heat conductive support plate having an extension piece extending outside the periphery of the insulating plate, a heat sink provided on the other surface side of the insulating plate, and an extension piece of the heat conductive support plate. And a pressing member for pressing the heat radiating plate.
[0009]
According to the present invention, the pressing member presses the extending piece of the heat conductive support plate provided on the insulating plate toward the heat sink, and the other surface of the insulating plate faces the heat sink via the heat conductive support plate. Adhere to At this time, the pressing force by the pressing member is not directly applied to the insulating plate. As a result, the stress applied to the insulating plate is reduced and the insulating plate is less likely to crack.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of a semiconductor device according to the present invention will be described in detail with reference to the drawings. It should be noted that the present invention is not limited by the embodiment.
[0011]
FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention. As shown in FIG. 1, the semiconductor device mainly includes an insulating plate 1, a semiconductor chip 2, a heat sink 3, and a resin case 4 as a pressing member.
[0012]
The insulating plate 1 is formed in a plate shape using a material such as alumina, aluminum nitride, or silicon nitride. The insulating plate 1 has a metal film 5 partially provided on one surface (the upper surface in FIG. 1). The insulating plate 1 is provided with a metal film 6 as a heat conductive support plate on the other surface (the lower surface in FIG. 1). The metal film 6 is a plate body having an area larger than the area of the insulating plate 1, and has an extending piece 6 a extending outside the periphery of the insulating plate 1. In the present embodiment, the metal film 6 covers the entire surface of the other surface of the insulating plate 1, and the extending piece 6 a integrally extends outside the entire periphery of the insulating plate 1. In addition, the extension piece 6a is provided with an endless groove 6b surrounding the insulating plate 1.
[0013]
The semiconductor chip 2 is, for example, a power semiconductor switching element used in a power semiconductor device. The semiconductor chip 2 is joined to the metal film 5 of the insulating plate 1 by solder 7. The electrodes of the semiconductor chip 2 are connected to other metal films 5 to which the semiconductor chip 2 is not bonded by wires 8 of aluminum or copper.
[0014]
The heat sink 3 is provided on the other surface side of the insulating plate 1. The insulating plate 1 is a plate made of copper, aluminum, or the like, and has an area larger than the area of the metal film 6 provided on the insulating plate 1. The heat radiating plate 3 is provided so that its surface faces the surface of the metal film 6. That is, the heat radiating plate 3 extends outside the periphery of the extending piece 6a of the metal film 6 as the heat conductive supporting plate.
[0015]
A grease layer 9 is interposed between the heat sink 3 and the metal film 6. The grease layer 9 is made of a heat conductive member such as silicone grease. The grease layer 9 contains a large amount of good thermal conductive powder in order to improve thermal conductivity. Further, as the grease layer 9, a sheet-like material such as a silicone sheet can be used in order to improve handleability.
[0016]
The resin case 4 forms a frame surrounding the semiconductor chip 2 mounted on the insulating plate 1. Specifically, the frame, which is the resin case 4, is formed so as to surround the periphery of the insulating plate 1 on which the semiconductor chip 2 is mounted. In addition, the frame body is provided with endless projections 4a so as to be inserted into and engaged with the concave grooves 6b provided in the extending pieces 6a of the metal film 6 as the heat conductive support plate. The resin case 4 thus configured is attached to the heat radiating plate 3 so as to press the extending piece 6 a of the metal film 6 toward the heat radiating plate 3.
[0017]
In this embodiment, bolts 10 are used as means for attaching the resin case 4 to the heat sink 3. The resin case 4 has an insertion hole 4b through which the bolt 10 is inserted. Further, the heat sink 3 is provided with a bolt hole 3a into which the bolt 10 is screwed. That is, the tip of the bolt 10 is inserted into the insertion hole 4 b of the resin case 4, and the tip is screwed into the bolt hole 3 a of the radiator plate 3, whereby the resin case 4 is attached to the radiator plate 3.
[0018]
Further, a filling resin 11 is filled in the frame of the resin case 4 attached to the heat sink 3. The filling resin 11 covers the semiconductor chip 2 to improve the insulating property of the connection portion of the semiconductor chip 2.
[0019]
To assemble the above-described semiconductor device, the semiconductor chip 2 is mounted on the insulating plate 1, and the heat radiating plate 3 is attached to the metal film 6 provided on the other surface of the insulating plate 1 via the grease layer 9. Face to face. In this state, the protrusion 4a of the resin case 4 is inserted into and engaged with the concave groove 6b of the metal film 6 so as to cover the resin case 4 from one surface side of the insulating plate 1. Then, the resin case 4 is attached to the heat sink 3 with the bolts 10 as described above. After that, the filling resin 11 is filled in the frame of the resin case 4.
[0020]
In the semiconductor device having the above-described configuration, the resin case 4 serving as the pressing member causes the extending piece 6 a of the metal film 6 serving as the heat conductive support plate provided on the insulating plate 1 to face the heat sink 3 by screwing the bolt 10. And push it. For this reason, the other surface of the insulating plate 1 is in close contact with the surface of the heat sink 3 via the metal film 6 and the grease layer 9. At this time, the stress pressed by the resin case 4 is not directly applied to the insulating plate 1. As a result, the stress applied to the insulating plate 1 is reduced, so that the insulating plate 1 is less likely to crack.
[0021]
Further, since the pressing force against the insulating plate 1 is not directly applied, the stress applied to the insulating plate 1 even when the radiating plate 3 is warped or when the radiating plate 3 has a projection facing the insulating plate 1. Is reduced, so that the insulating plate 1 is less likely to crack. In addition, since there is no need to process a member for reducing the warpage of the heat sink 3 to a certain amount or less, the member processing cost can be reduced.
[0022]
Further, since the metal film 6 has the extending piece 6a extending outside the periphery of the insulating plate 1, heat generated in the semiconductor chip 2 is easily diffused through the extending piece 6a. Heat dissipation can be improved.
[0023]
Further, the grease layer 9 fills a gap between the heat radiating plate 3 and the metal film 6 or a gap due to minute irregularities on the surface of the metal film 6 to improve heat dissipation. Then, as described above, if a large amount of good thermal conductive powder is mixed into the grease layer 9, the heat dissipation can be further improved. Here, there is a concern that the grease layer 9 mixed with the good thermal conductive powder has an increased hardness and an increased stress applied to the insulating plate 1. However, in the present semiconductor device, since the pressing force against the insulating plate 1 is not directly applied as described above, even when the hardness of the grease layer 9 increases, the stress generated in the insulating plate does not increase, and the insulating plate is less likely to crack. Become.
As a result, the heat dissipation of the semiconductor chip 2 is improved and the life of the semiconductor chip 2 is extended, so that the reliability of the semiconductor device can be improved. Further, since the heat dissipation of the semiconductor chip 2 is improved, the size of the semiconductor chip can be reduced, and the size of the semiconductor device can be reduced.
[0024]
Further, in the above-described semiconductor device, the extension piece 6a of the metal film 6 as the heat conductive support plate is provided with the endless concave groove 6b, and the resin case 4 as the pressing member for pushing the extension piece 6a is provided in the resin case 4. Since the endless projections 4a which are inserted and engaged are provided, the resin case 4 can reliably surround the insulating plate 1 on which the semiconductor chip 2 is mounted. As a result, it is possible to reliably prevent the filling resin 11 filled in the frame of the resin case 4 from leaking outside the resin case 4. Further, even if the heat radiating plate 3 is warped, the insertion of the projection 4a into the concave groove 6b does not come off, so that leakage of the filling resin 11 to the outside of the resin case 4 can be prevented.
[0025]
Further, the engagement between the concave groove 6b and the projection 4a facilitates the alignment between the insulating plate 1 and the resin case 4. Further, by attaching the resin case 4 to the heat radiating plate 3 with bolts 10, the relative positions of the insulating plate 1 and the heat radiating plate 3 can be easily adjusted. In the conventional semiconductor device, in order to align the insulating plate 1 and the resin case 4, the resin case 4 is thickened so as to fit around the insulating plate 1 in the resin case 4 to form a concave portion. In the present semiconductor device, the positioning between the insulating plate 1 and the resin case 4 is performed by the engagement between the concave groove 6b and the projection 4a, so that the thickness and the concave portion are not required. As a result, the amount of resin in the resin case 4 can be reduced, and a lightweight and inexpensive semiconductor element can be obtained.
[0026]
【The invention's effect】
As described above, according to the present invention, according to the present invention, the pressing member presses the extending piece of the heat conductive support plate provided on the insulating plate toward the heat radiating plate, and the other of the insulating plate via the heat conductive supporting plate. The surface is in close contact with the surface of the heat sink. Thus, since the stress for pressing the insulating plate against the heat sink is not directly applied to the insulating plate, the effect of suppressing the stress applied to the insulating plate and preventing the insulating plate from cracking can be obtained.
[Brief description of the drawings]
FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 insulating plate, 2 semiconductor chip, 3 heat sink, 3 a bolt hole, 4 resin case (pressing member), 4 a projection, 4 b insertion hole, 5 metal film, 6 metal film (heat conductive support plate), 6 a extension piece , 6b groove, 7 solder, 8 wire, 9 grease layer, 10 volt, 11 filling resin.

Claims (3)

半導体チップを一方の面に搭載した絶縁板と、
前記絶縁板の他方の面に設けてあり当該絶縁板の周縁より外側に延在する延在片を有した熱伝導性支持板と、
前記絶縁板の他方の面側に設けた放熱板と、
前記熱伝導性支持板の延在片を前記放熱板に向けて押し付ける押圧部材とを備えたことを特徴とする半導体装置。An insulating plate with a semiconductor chip mounted on one side,
A heat conductive support plate provided on the other surface of the insulating plate and having an extending piece extending outside the peripheral edge of the insulating plate;
A heat sink provided on the other surface side of the insulating plate,
A semiconductor device comprising: a pressing member that presses the extending piece of the heat conductive support plate toward the heat sink. 前記熱伝導性支持板の延在片を前記放熱板に向けて押し付ける態様で前記押圧部材を前記放熱板に取り付けたことを特徴とする請求項１に記載の半導体装置。2. The semiconductor device according to claim 1, wherein the pressing member is attached to the heat radiating plate such that the extending piece of the heat conductive supporting plate is pressed toward the heat radiating plate. 3. 前記延在片を前記絶縁板の全周縁より外側に一体に延在して当該延在片に前記絶縁板を囲む態様で設けた無端状の凹溝と、
前記押圧部材を前記半導体チップの周囲を取り囲む枠体として当該枠体に前記凹溝と係合する態様で設けた無端状の突起とを備えたことを特徴とする請求項１または２に記載の半導体装置。An endless concave groove provided so as to extend the extending piece integrally outside the entire peripheral edge of the insulating plate and to provide the extending piece in a manner to surround the insulating plate;
The endless projection provided in the frame so as to engage with the concave groove as the frame surrounding the periphery of the semiconductor chip, wherein the pressing member is provided as a frame surrounding the periphery of the semiconductor chip. Semiconductor device.
JP2003147551A 2003-05-26 2003-05-26 Semiconductor device Pending JP2004349614A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020255558A1 (en) * 2019-06-21 2020-12-24 株式会社ケーヒン Power conversion device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020255558A1 (en) * 2019-06-21 2020-12-24 株式会社ケーヒン Power conversion device
CN113906663A (en) * 2019-06-21 2022-01-07 日立安斯泰莫株式会社 Power conversion device
US12074532B2 (en) 2019-06-21 2024-08-27 Hitachi Astemo, Ltd. Power conversion device
JP7551608B2 (en) 2019-06-21 2024-09-17 日立Astemo株式会社 Power Conversion Equipment

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