JP2004335579A - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
JP2004335579A
JP2004335579A JP2003126352A JP2003126352A JP2004335579A JP 2004335579 A JP2004335579 A JP 2004335579A JP 2003126352 A JP2003126352 A JP 2003126352A JP 2003126352 A JP2003126352 A JP 2003126352A JP 2004335579 A JP2004335579 A JP 2004335579A
Authority
JP
Japan
Prior art keywords
light
light emitting
phosphor
red
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003126352A
Other languages
Japanese (ja)
Inventor
Tsutomu Odaki
勉 小田喜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fine Rubber Kenkyusho KK
Original Assignee
Fine Rubber Kenkyusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fine Rubber Kenkyusho KK filed Critical Fine Rubber Kenkyusho KK
Priority to JP2003126352A priority Critical patent/JP2004335579A/en
Publication of JP2004335579A publication Critical patent/JP2004335579A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device which is capable of efficiently emitting red light of high brightness responding to the stimulation light having wavelengths of 350 to 420 nm, emitting a wide range of red light, excellent in color rendering, and capable of displaying a delicate tone more precisely with high reproducibility when the device is used together with a green light emitting fluorescent material and a blue light emitting fluorescent material, to enable a fluorescent material to emit white light or neutral colors as it receives the light emitted from a semiconductor light emitting element which emits the light having the above wavelengths. <P>SOLUTION: The light emitting device is equipped with a semiconductor light emitting element which is sealed in a sealing body and emits light having wavelengths of 350 to 420 nm. A red light emitting fluorescent material where tetravalent Mn serves as luminous ions and another red light emitting fluorescent material where trivalent Eu serves as luminous ions are dispersed into the sealing body. Furthermore, a fluorescent layer contains a red light emitting fluorescent material where tetravalent Mn serves as luminous ions, and another red light emitting fluorescent material where trivalent Eu serves as luminous ions, and is provided on the optical path of light emitted from the above semiconductor light emitting element. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は、350〜420nmの長波長紫外線又は短波長可視光線により励起され赤色に発光する赤色発光蛍光体、その製造方法及びその赤色発光蛍光体を用いた発光装置に関する。
【0002】
【従来の技術】
発光ダイオード(LED:Light Emitting Diode)は、光を放射する半導体発光素子であり、電気エネルギーを紫外光、可視光、赤外光などに変換するものである。例えば、可視光を利用するものとしては、GaP、GaAsP、GaAlAs等の発光材料で形成した半導体発光素子があり、これらを透明樹脂等で封止したLEDランプが広く使用されている。また、発光材料をプリント基板や金属リードの上面に固定し、数字や文字をかたどった透明樹脂ケースで封止したディスプレイ型のLEDランプなども多用されている。
【0003】
また、発光ダイオードは半導体素子であるため、寿命が長く、信頼性も高く、光源として用いた場合には、その交換作業も軽減できることから、携帯通信機器、パーソナルコンピュータ周辺機器、OA機器、家庭用電気機器、オーディオ機器、各種スイッチ、バックライト用光源、掲示板等の各種表示装置などの構成部品として広く使用されている。
【0004】
このようなLEDランプは、各種の蛍光体粉末を半導体発光素子を封止する透明樹脂中に含有させることにより、LEDランプから放射される光の色を変化させることが可能であり、使用用途に応じて青色から赤色まで可視光領域の広い範囲の色を得ることが可能である。
【0005】
しかしながら、最近では、上記各種表示装置の色彩に対する需要者の要求が高まり、表示装置に微妙な色合いをより精密に再現できる性能が要求されていると共に、1個のLEDランプにより白色や各種の中間色を発光させることができることが強く求められている。
【0006】
そのため、LEDランプの半導体発光素子の表面に、赤色、緑色、青色の各種蛍光体を塗布したり、LEDランプの封止材、コーティング材等に上記各種蛍光体を含有させたりすることにより、1個のLEDランプで白色や各種の中間色を表示できるように構成することも試行されている。
【0007】
このような蛍光体の中で、長波長紫外線又は短波長可視光線(350〜420nm)で励起する蛍光体として、現在、主に使用されているものとしては、発光色が青色のBaMgAl1627:Eu、(Sr,Ca,Ba)(POCl:Eu、発光色が緑色のBaMgAl1627:Eu,Mn、ZnGeO:Mn、発光色が赤色のYS:Eu、LaS:Eu、3.5MgO・0.5MgF・GeO:Mnなどがあり、これらの発光蛍光体を適宜用いることにより広い範囲の発光色を得ることができる。
【0008】
しかしながら、上記赤色発光蛍光体には、青色、緑色発光蛍光体と比較して長波長紫外線及び短波長可視光線(350〜420nm)に対する発光が弱いという問題がある。
【0009】
そのため、これらの波長の光を用いて白色系の発光色を得る場合、赤色発光蛍光体の割合を多くしなければならず、コストが高くなること、白色系の発光色は、赤色、緑色、青色の発光量のバランスを合わせることにより白色を得ることができるものであるから、白色系の発光色を得るためには、赤色の発光量に合わせて緑色及び青色の発光量を減らさざるを得ず、また、蛍光体の使用量にも上限があるため、得られる白色光の発光量が少なくなってしまい、高輝度の白色が得られないことなどが問題となっている。
【0010】
更に、酸化物系化合物の電子対の励起エネルギーに対応する波長は紫外領域にあり、長波長紫外線及び短波長可視光線(350〜420nm)の波長は蛍光体の吸収端と重なるため、特に、赤色発光蛍光体には、半導体発光素子の発光波長のピークが変動すると蛍光体の発光量が著しく変化してしまうという問題もある。
【0011】
この問題を解決するためユーロピウムで付活された希土類酸硫化物蛍光体が特開平11−246857号公報(特許文献1)や特開2000−144130号公報(特許文献2)などで提案されており、このような蛍光体は、励起波長が長波長側へシフトしていることが報告されている。
【0012】
しかしながら、これらの赤色発光蛍光体でも350nmより長波長側での吸収強度は、波長が長くなるに従って急激に低下しており、350〜342nmを発光ピークとする励起光源、例えば紫外LEDを励起光源に用いた場合、製造上避けられないLEDの発光波長、即ち励起光の波長の変動により蛍光体の発光量が著しく変化してしまう。これは、緑色、青色の発光蛍光体と併用して白色や中間色を表示する場合には、色合いがばらつくことになるため、従来の赤色発光蛍光体では、微妙な色合いをより精密に再現することが困難であった。
【0013】
また、上記の赤色発光蛍光体は発光は、3価のEuイオン(Eu3+)の4f−4f遷移による発光であるため、その発光はスペクトル幅の610〜630nm程度の幅の狭いものであり、特に640nmより長波長側のスペクトルが不足しているため演色性に劣るという問題があった。
【0014】
【特許文献1】
特開平11−246857号公報
【特許文献2】
特開2000−144130号公報
【0015】
【発明が解決しようとする課題】
本発明は、上記問題点を解決するためになされたものであり、波長が350〜420nmの励起光に対して赤色光を効率よく高輝度で発光できる発光装置及び緑色発光蛍光体、青色発光蛍光体と併用して白色若しくは中間色を効率よく高輝度で、かつ演色性よく表示できる発光装置を提供することを目的とする。
【0016】
【課題を解決するための手段及び発明の実施の形態】
本発明者は、上記問題を解決するため鋭意検討を重ねた結果、波長が350〜420nmの光を発光する半導体発光素子が封止材内に封止されてなる発光装置であり、上記封止材に上記波長の光により励起されて発光する4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体及び3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体を分散させた発光装置、又は波長が350〜420nmの光を発光する半導体発光素子が封止材内に封止されてなる発光装置であり、上記半導体発光素子から発光する光の光路上に、上記波長の光により励起されて発光する4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体及び3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体を含む蛍光層を設けた発光装置が、4価のMn(Mn4+)イオンの吸収スペクトルには、可視から近紫外領域に(t )→(t e)スピン許容遷移に対応した強い吸収バンドがあり、波長が350〜420nmの励起光に対して赤色光を効率よく高輝度で発光すること、また、3価のEu(Eu3+)とは異なる波長で赤色光と発光することから、3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体と併用することによって広い赤色域を発光できる演色性のよい発光装置となること、また、長波長紫外線から短波長可視光線の領域の広い範囲の波長に対して安定した強度で赤色を発光する発光装置であり、特に、緑色発光蛍光体及び/又は青色発光蛍光体と併用すれば、白色若しくは中間色を効率よく高輝度で発光でき、励起光の波長の変動の影響を受けにくいため、緑色発光蛍光体、青色発光蛍光体と併用して上記波長の光を発光する半導体発光素子からの光により蛍光体を発光させて白色若しくは中間色を表示する場合、微妙な色合いをより精密に再現性よく表示することができることを見出した。
【0017】
即ち、本発明は、
[1] 波長が350〜420nmの光を発光する半導体発光素子が封止材内に封止されてなる発光装置であって、上記封止材に上記波長の光により励起されて発光する4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体及び3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体を分散させたことを特徴とする発光装置、
[2] 更に、緑色発光蛍光体及び/又は青色発光蛍光体を分散させたことを特徴とする[1]記載の発光装置、
[3] 波長が350〜420nmの光を発光する半導体発光素子が封止材内に封止されてなる発光装置であって、上記半導体発光素子から発光する光の光路上に、上記波長の光により励起されて発光する4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体及び3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体を含む蛍光層を設けたことを特徴とする発光装置、
[4] 更に、緑色発光蛍光体及び/又は青色発光蛍光体を含有することを特徴とする[3]記載の発光装置、
[5] 上記半導体発光素子上又は封止材上に蛍光層を設けたことを特徴とする[3]又は[4]記載の発光装置、
[6] 上記蛍光層が上記赤色発光蛍光体を樹脂、ゴム、エラストマー又はガラスに分散してなるものであることを特徴とする[3]乃至[5]のいずれか1項記載の発光装置、
[7] 上記4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体が0.5MgF・3.5MgO・GeO:Mn、MgTiO:Mn、α−Al:Mn、LiAl:Mn、MgAs11:Mn又は6MgO・As:Mnであることを特徴とする[1]乃至[6]のいずれか1項記載の発光装置、及び
[8] 上記3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体がY:Eu、LaS:Eu又はLiEuWであることを特徴とする請求項[1]乃至[7]のいずれか1項記載の発光装置
を提供する。
【0018】
以下、本発明について更に詳述する。
まず、本発明の発光装置の第1の態様について説明する。この第1の態様の光学装置は、波長が350〜420nmの光を発光する半導体発光素子が封止材内に封止されてなる発光装置であり、上記封止材に上記波長の光により励起されて発光する4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体及び3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体を分散させたものである。
【0019】
上記4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体としては、例えば、0.5MgF・3.5MgO・GeO:Mn、MgTiO:Mn、α−Al:Mn、LiAl:Mn、MgAs11:Mn又は6MgO・As:Mn等が、3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体としてはY:Eu、LaS:Eu、LiEuW等が挙げられ、これら4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体と3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体との比を変化させることにより、赤色光の微妙な色合いを変えることが可能である。
【0020】
このような発光装置として更に具体的には、図1に示されるような、リード1,2、波長が350〜420nmの光を発光する半導体発光素子3、半導体発光素子3とリード2とを電気的に接続するリード細線4を、封止材5で砲弾型に封止した構造の、いわゆる砲弾タイプの発光ダイオードや、図2に示されるような、上面が開口した箱形の発光体収容部材6の内底から一対のリード1,2を発光体収容部材6の外部へ延出し、この発光体収容部材6の内部に波長が350〜420nmの光を発光する半導体発光素子3やリード細線4,4を収容し、これらを接続して、発光体収容部材6内部を封止材5で封止した構造の、いわゆるチップ型の発光ダイオードなどの封止材5中に、上記波長の光により励起されて発光する4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体及び3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体を分散させたものが挙げられる。
【0021】
この場合、封止材5中に上述した本発明の赤色発光蛍光体のみを分散させれば、高輝度の赤色を発光する発光装置となり、BaMgAl1627:Eu,Mn、ZnGeO:Mn等の緑色発光蛍光体、BaMgAl1627:Eu、(Sr,Ca,Ba)(POCl:Eu等の青色蛍光発光体と共に分散させれば、高輝度の白色又は中間色を発光する発光装置となる。
【0022】
なお、この発光装置は、半導体発光素子等を封止する際に、樹脂、ゴム、エラストマー、ガラスなどの封止材材料に蛍光体を混合して封止することにより製造することができる。特に、複数種の蛍光体を用いる場合、本発明の赤色発光蛍光体は、一般的な蛍光体に比べ、真比重が高いため封止材料と混合したときに他の蛍光体よりも速く沈降して色むらを引き起こすおそれがある。そのため、本発明の赤色発光蛍光体は、粘度の高いもの、例えば、チキソトロピー調整剤で粘度を調整したシリコーンゴム組成物、シリコーン樹脂組成物などに混合し、これを硬化させる方法で封止材中に分散させることが好ましい。また、封止材中には色調変換材料として上述した蛍光体の他に、顔料、染料、擬似顔料などを添加してもよい。
【0023】
次に、本発明の発光装置の第2の態様について説明する。この第2の態様の発光装置は、波長が350〜420nmの光を発光する半導体発光素子が封止材内に封止されてなる発光装置であって、上記半導体発光素子から発光する光の光路上に上述した本発明の赤色発光蛍光体を含む蛍光層を設けたものである。
【0024】
上記4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体としては、例えば、0.5MgF・3.5MgO・GeO:Mn、MgTiO:Mn、α−Al:Mn、LiAl:Mn、MgAs11:Mn又は6MgO・As:Mn等が、3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体としてはY:Eu、LaS:Eu、LiEuW等が挙げられ、これら4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体と3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体との比を変化させることにより、赤色光の微妙な色合いを変えることが可能である。
【0025】
このような発光装置として更に具体的には、例えば、半導体発光素子上又は封止材上に本発明の赤色発光蛍光体を含む蛍光層を設けたものが挙げられ、具体的には、図3に示されるような、リード1,2、波長が350〜420nmの光を発光する半導体発光素子3、半導体発光素子3とリード2とを電気的に接続するリード細線4を、封止材5で砲弾型に封止した構造の、いわゆる砲弾タイプの発光ダイオードの半導体発光素子3上に蛍光層7を設けて半導体発光素子3等と共に封止したもの、図4に示されるような、上面が開口した箱形の発光体収容部材6の内底から一対のリード1,2を発光体収容部材6の外部へ延出し、この発光体収容部材6の内部に波長が350〜420nmの光を発光する半導体発光素子3やリード細線4,4を収容し、これらを接続して、発光体収容部材6内部を封止材5で封止した構造の、いわゆるチップ型の発光ダイオードの半導体発光素子3上に蛍光層7を設けて半導体発光素子3等と共に封止したもの、図5に示されるような砲弾タイプの発光ダイオードの封止材5上に封止材5を被覆するように蛍光層7を設けたもの、図6に示されるようなチップ型の発光ダイオードの封止材5上に蛍光層7を設けたものが挙げられる。なお、図5、図6中の蛍光層以外の構成は図1、図2に各々示される構成と同様であるため説明を省略する。
【0026】
また、上述したような、蛍光層を発光ダイオード内部に又は発光ダイオードと隣接して設けたいわゆる透過型のものに限らず、図7に示されるように、蛍光層7を発光ダイオード8から離間する位置に設けると共に、この蛍光層から発光した光を反射板9で反射させるいわゆる反射型の発光装置も挙げられる。また、図5、図6に示されるような封止材上に蛍光層を設けた発光装置の蛍光層を、更に封止材で封止することも可能である。
【0027】
この場合、蛍光層中に上述した本発明の赤色発光蛍光体のみを分散させれば、高輝度の赤色を発光する発光装置となり、BaMgAl1627:Eu,Mn、ZnGeO:Mn等の緑色発光蛍光体、BaMgAl1627:Eu、(Sr,Ca,Ba)(POCl:Eu等の青色蛍光発光体と共に分散させれば、高輝度の白色又は中間色を発光する発光装置となる。
【0028】
なお、蛍光層を半導体発光素子上に設ける場合は、蛍光体をそのままで用いてもバインダーと共に混合して用いてもよい。この場合、図3、図4に示されるように、蛍光層は半導体発光素子と共に封止材中に封止されることとなる。
【0029】
一方、蛍光層を封止材上に設ける場合、赤色発光蛍光体を透光性の樹脂、ゴム、エラストマー又はガラス、特にシリコーン樹脂又はシリコーンゴムに分散させて用いることが好ましい。特に、複数種の蛍光体を蛍光層に分散させる場合、上述した封止材に本発明の赤色発光蛍光体を分散させる場合と同様、チキソトロピー調整剤で粘度を調整したシリコーンゴム組成物、シリコーン樹脂組成物などに混合し、これを硬化させる方法で蛍光層中に分散させることが好ましい。また、蛍光層は、蛍光体を混合して1層としたものでも、蛍光体をいくつかの層にわけて積層したものでもよい。また、蛍光層中には色調変換材料として上述した蛍光体の他に、顔料、染料、擬似顔料などを添加してもよい。
【0030】
【実施例】
以下、実施例を挙げて本発明を具体的に説明するが、本発明は下記実施例に限定されるものではない。
【0031】
[実施例1]
赤色発光蛍光体として、0.5MgF・3.5MgO・GeO:Mn、Y:Eu、青色発光蛍光体として(Sr,Ca,Ba)(POCl:Eu、緑色発光蛍光体としてBaMgAl1627:Eu,Mnを5:10:1:1の割合でシリコーンゴムに混合分散させた図6に示される蛍光層7の形状のシリコーンゴム製シート(厚さ0.5mm)を加熱プレス機を用いて製造し、これを発光波長が380nmの紫外LEDの封止材上に被せて蛍光層として図6に示されるような発光装置を得た。
【0032】
積分球中においてこの発光装置に20mAの電流を流して点灯し、得られた光の分光分布を分光放射輝度計PR−704(Photo Research社製)で測色した。この分光分布を図8に示す。この発光装置の色度はx=0.3542、y=0.3517の白色であった。また、図8に示されるように、この分光分布からY:Euによる630nmの発光及び0.5MgF・3.5MgO・GeO:Mnによる662nmの発光が確認され、赤色光が発光領域の広いものであることが確認された。
【0033】
[実施例2]
0.5MgF・3.5MgO・GeO:Mnの代わりにMgTiO:Mnを用いた以外は実施例1と同様の方法で発光装置を得、この発光装置から得られた光の分光分布を測定したところ、Y:Euによる630nmの発光及びMgTiO:Mnによる659nmの発光が確認され、赤色光が発光領域の広いものであることが確認された。
【0034】
【発明の効果】
以上のように、本発明の発光装置は、波長が350〜420nmの励起光に対して赤色光を効率よく高輝度で発光でき、広い赤色域を発光できる演色性のよい発光装置である。
【0035】
また、本発明の発光装置は、長波長紫外線から短波長可視光線の領域の広い範囲の波長に対して安定した強度で赤色を発光する発光装置であり、特に、緑色発光蛍光体及び/又は青色発光蛍光体と併用すれば、白色若しくは中間色を効率よく高輝度で発光でき、励起光の波長の変動の影響を受けにくいため、緑色発光蛍光体、青色発光蛍光体と併用して上記波長の光を発光する半導体発光素子からの光により蛍光体を発光させて白色若しくは中間色を表示する場合、微妙な色合いをより精密に再現性よく表示することができる。
【図面の簡単な説明】
【図1】本発明の光学装置の一例を示す図であり、砲弾型の発光ダイオードの封止材に本発明の赤色発光蛍光体を分散させた発光装置を示す断面図である。
【図2】本発明の光学装置の一例を示す図であり、チップ型の発光ダイオードの封止材に本発明の赤色発光蛍光体を分散させた発光装置を示す断面図である。
【図3】本発明の光学装置の一例を示す図であり、砲弾型の発光ダイオードの半導体発光素子上に本発明の赤色発光蛍光体を含む蛍光層を設けた発光装置を示す断面図である。
【図4】本発明の光学装置の一例を示す図であり、チップ型の発光ダイオードの半導体発光素子上に本発明の赤色発光蛍光体を含む蛍光層を設けた発光装置を示す断面図である。
【図5】本発明の光学装置の一例を示す図であり、砲弾型の発光ダイオードの封止材上に本発明の赤色発光蛍光体を含む蛍光層を設けた発光装置を示す断面図である。
【図6】本発明の光学装置の一例を示す図であり、チップ型の発光ダイオードの封止材上に本発明の赤色発光蛍光体を含む蛍光層を設けた発光装置を示す断面図である。
【図7】本発明の光学装置の一例を示す図であり、蛍光層を発光ダイオードから離間する位置に設けると共に、この蛍光層から発光した光を反射させる発光装置を示す断面図である。
【図8】実施例1の発光装置の発光光の分光分布を示す図である。
【符号の説明】
1,2 リード
3 半導体発光素子
4 リード細線
5 封止材
6 発光体収容部材
7 蛍光層
8 発光ダイオード
9 反射板
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a red-light-emitting phosphor that emits red light when excited by long-wavelength ultraviolet light or short-wavelength visible light at 350 to 420 nm, a method for manufacturing the same, and a light-emitting device using the red-light-emitting phosphor.
[0002]
[Prior art]
A light emitting diode (LED: Light Emitting Diode) is a semiconductor light emitting element that emits light, and converts electric energy into ultraviolet light, visible light, infrared light, and the like. For example, as a device utilizing visible light, there is a semiconductor light emitting device formed of a light emitting material such as GaP, GaAsP, GaAlAs, and an LED lamp in which these are sealed with a transparent resin or the like is widely used. In addition, display-type LED lamps in which a light-emitting material is fixed on the upper surface of a printed board or a metal lead and sealed with a transparent resin case in the shape of numerals or characters are also frequently used.
[0003]
In addition, since the light emitting diode is a semiconductor element, it has a long life, high reliability, and when used as a light source, the replacement work can be reduced. Therefore, portable communication devices, personal computer peripheral devices, OA devices, home use devices, and the like. It is widely used as a component of electrical equipment, audio equipment, various switches, light sources for backlights, various display devices such as bulletin boards, and the like.
[0004]
Such an LED lamp can change the color of light emitted from the LED lamp by including various kinds of phosphor powder in a transparent resin for encapsulating the semiconductor light emitting element. Accordingly, it is possible to obtain a wide range of colors in the visible light range from blue to red.
[0005]
However, recently, the demands of consumers for the colors of the above-mentioned various display devices have increased, and the display devices have been required to have a performance capable of reproducing a delicate color more precisely, and a single LED lamp has been used to produce white and various intermediate colors. There is a strong demand for light to be emitted.
[0006]
Therefore, by applying various red, green, and blue phosphors to the surface of the semiconductor light emitting element of the LED lamp, or by including the various phosphors in a sealing material, a coating material, and the like of the LED lamp, 1 Attempts have also been made to configure white LED and various intermediate colors with a single LED lamp.
[0007]
Among such phosphors, a phosphor excited by long wavelength ultraviolet or short wavelength visible radiation (350 to 420 nm), currently, as being mainly used, the emission color is blue BaMg 2 Al 16 O 27 : Eu, (Sr, Ca, Ba) 5 (PO 4 ) 3 Cl: Eu, emission color of green BaMg 2 Al 16 O 27 : Eu, Mn, Zn 2 GeO 4 : Mn, emission color of red Y 2 O 2 S: Eu, La 2 O 2 S: Eu, 3.5MgO · 0.5MgF 2 · GeO 2: Mn include, obtain the emission color of a wide range by using these light emitting phosphor suitably be able to.
[0008]
However, the red light-emitting phosphor has a problem in that light emission for long-wavelength ultraviolet light and short-wavelength visible light (350 to 420 nm) is weaker than blue and green light-emitting phosphors.
[0009]
Therefore, when a white light emission color is obtained using light of these wavelengths, it is necessary to increase the proportion of the red light emitting phosphor, which increases the cost, and the white light emission color is red, green, Since it is possible to obtain white light by adjusting the balance of the amount of blue light emission, in order to obtain a white light emission color, the amount of green and blue light emission must be reduced in accordance with the amount of red light emission. In addition, since the amount of phosphor used has an upper limit, the amount of emitted white light is reduced, and there is a problem that high-luminance white cannot be obtained.
[0010]
Further, the wavelength corresponding to the excitation energy of the electron pair of the oxide compound is in the ultraviolet region, and the wavelengths of long-wavelength ultraviolet light and short-wavelength visible light (350 to 420 nm) overlap with the absorption edge of the phosphor. The light emitting phosphor also has a problem that when the emission wavelength peak of the semiconductor light emitting element fluctuates, the light emission amount of the phosphor changes remarkably.
[0011]
To solve this problem, rare earth oxysulfide phosphors activated with europium have been proposed in JP-A-11-246857 (Patent Document 1) and JP-A-2000-144130 (Patent Document 2). It has been reported that the excitation wavelength of such a phosphor is shifted to a longer wavelength side.
[0012]
However, even with these red light-emitting phosphors, the absorption intensity on the longer wavelength side than 350 nm sharply decreases as the wavelength becomes longer, and an excitation light source having an emission peak at 350 to 342 nm, for example, an ultraviolet LED as an excitation light source. When used, the emission amount of the phosphor is significantly changed due to the fluctuation of the emission wavelength of the LED, which is inevitable in manufacturing, that is, the wavelength of the excitation light. This is because when displaying white or neutral colors in combination with green and blue light-emitting phosphors, the color will vary, so the conventional red light-emitting phosphor must reproduce subtle colors more precisely. Was difficult.
[0013]
In addition, since the red light-emitting phosphor emits light due to 4f-4f transition of trivalent Eu ions (Eu 3+ ), the light emission has a narrow spectrum width of about 610 to 630 nm. In particular, there is a problem that the color rendering properties are inferior because the spectrum on the longer wavelength side than 640 nm is insufficient.
[0014]
[Patent Document 1]
JP-A-11-246857 [Patent Document 2]
JP 2000-144130 A
[Problems to be solved by the invention]
The present invention has been made to solve the above problems, and a light emitting device, a green light emitting phosphor, and a blue light emitting phosphor capable of efficiently emitting red light with high luminance with respect to excitation light having a wavelength of 350 to 420 nm. It is an object of the present invention to provide a light-emitting device that can efficiently display white or intermediate colors with high luminance and good color rendering in combination with a body.
[0016]
Means for Solving the Problems and Embodiments of the Invention
The present inventor has conducted intensive studies to solve the above problems, and as a result, a light emitting device in which a semiconductor light emitting element that emits light having a wavelength of 350 to 420 nm is sealed in a sealing material. A red-emitting phosphor in which tetravalent Mn (Mn 4+ ) emits light by being excited by light of the above-mentioned wavelength and a red-emitting phosphor in which trivalent Eu (Eu 3+ ) forms a light-emitting ion is dispersed in the material. Light-emitting device, or a light-emitting device in which a semiconductor light-emitting element that emits light having a wavelength of 350 to 420 nm is sealed in a sealing material. Light emission provided with a fluorescent layer containing a red light-emitting phosphor in which tetravalent Mn (Mn 4+ ) emits light when excited by light and a red light-emitting phosphor in which trivalent Eu (Eu 3+ ) forms a light-emitting ion. If the device is The absorption spectrum of the n (Mn 4+) ion, 4 A 2 (t 2 3 ) in the near-ultraviolet region from the visible → 4 T 1, 4 T 2 (t 2 2 e) strong absorption bands corresponding to the spin allowed transition is Yes, it emits red light efficiently and with high luminance with respect to excitation light having a wavelength of 350 to 420 nm, and emits red light at a wavelength different from that of trivalent Eu (Eu 3+ ). By using Eu (Eu 3+ ) as a light-emitting ion together with a red light-emitting phosphor, a light-emitting device having good color rendering properties capable of emitting light in a wide red range can be obtained. A light-emitting device that emits red light with a stable intensity over a range of wavelengths. In particular, when used in combination with a green light-emitting phosphor and / or a blue light-emitting phosphor, it can efficiently emit white or intermediate colors with high luminance, and can be excited. light In the case of displaying white or neutral colors by emitting light from a semiconductor light emitting element that emits light of the above-described wavelength in combination with a green light-emitting phosphor and a blue light-emitting phosphor because the phosphor is hardly affected by wavelength fluctuation. It has been found that subtle shades can be displayed more precisely and with good reproducibility.
[0017]
That is, the present invention
[1] A light-emitting device in which a semiconductor light-emitting element which emits light having a wavelength of 350 to 420 nm is sealed in a sealing material, wherein the sealing material emits light when excited by light having the wavelength. A light emitting device, wherein a red light emitting phosphor in which Mn (Mn 4+ ) forms a light emitting ion and a red light emitting phosphor in which trivalent Eu (Eu 3+ ) forms a light emitting ion are dispersed;
[2] The light emitting device according to [1], further comprising a green light emitting phosphor and / or a blue light emitting phosphor dispersed therein.
[3] A light-emitting device in which a semiconductor light-emitting element that emits light having a wavelength of 350 to 420 nm is sealed in a sealing material, and the light having the wavelength is provided on an optical path of light emitted from the semiconductor light-emitting element. A fluorescent layer containing a red light-emitting phosphor in which tetravalent Mn (Mn 4+ ) emits light by being excited by the above and a red light-emitting phosphor in which trivalent Eu (Eu 3+ ) forms a light-emitting ion. Light emitting device,
[4] The light emitting device according to [3], further comprising a green light emitting phosphor and / or a blue light emitting phosphor.
[5] The light emitting device according to [3] or [4], wherein a fluorescent layer is provided on the semiconductor light emitting element or the sealing material.
[6] The light-emitting device according to any one of [3] to [5], wherein the phosphor layer is formed by dispersing the red light-emitting phosphor in a resin, rubber, elastomer, or glass.
[7] The red-emitting phosphor in which the tetravalent Mn (Mn 4+ ) forms a light-emitting ion is 0.5MgF 2 .3.5MgO.GeO 2 : Mn, Mg 2 TiO 4 : Mn, α-Al 2 O 3 : Mn, LiAl 5 O 8 : Mn, Mg 6 As 2 O 11 : Mn or 6MgO · As 2 O 5 : Mn, the light emitting device according to any one of [1] to [6], And [8] the red-emitting phosphor in which the trivalent Eu (Eu 3+ ) forms a luminescent ion is Y 2 O 2 : Eu, La 2 O 2 S: Eu or LiEuW 2 O 8. The light-emitting device according to any one of items [1] to [7] is provided.
[0018]
Hereinafter, the present invention will be described in more detail.
First, a first embodiment of the light emitting device of the present invention will be described. The optical device of the first aspect is a light emitting device in which a semiconductor light emitting element that emits light having a wavelength of 350 to 420 nm is sealed in a sealing material, and the sealing material is excited by light of the wavelength. A red light emitting phosphor in which tetravalent Mn (Mn 4+ ) emits light and forms a light emitting ion and a red light emitting phosphor in which trivalent Eu (Eu 3+ ) forms a light emitting ion are dispersed.
[0019]
Examples of red-emitting phosphor which the tetravalent Mn (Mn 4+) forms a luminescent ions, for example, 0.5MgF 2 · 3.5MgO · GeO 2 : Mn, Mg 2 TiO 4: Mn, α-Al 2 O 3 : Mn, LiAl 5 O 8 : Mn, Mg 6 As 2 O 11 : Mn or 6MgO · As 2 O 5 : Mn, etc., as a red light-emitting phosphor in which trivalent Eu (Eu 3+ ) forms a light-emitting ion, Y 2 O 2: Eu, La 2 O 2 S: Eu, include such LiEuW 2 O 8, these tetravalent Mn red-emitting phosphor (Mn 4+) forms a luminescent ion and trivalent Eu (Eu 3+) It is possible to change the subtle hue of the red light by changing the ratio of the red light emitting phosphor to the light emitting phosphor that forms the light emitting ions.
[0020]
More specifically, as shown in FIG. 1, such a light emitting device includes leads 1 and 2, a semiconductor light emitting element 3 which emits light having a wavelength of 350 to 420 nm, and a semiconductor light emitting element 3 and a lead 2. A so-called shell-type light emitting diode having a structure in which lead wires 4 to be electrically connected are sealed in a shell shape with a sealing material 5, and a box-shaped light emitter housing member having an open top surface as shown in FIG. 6, a pair of leads 1 and 2 extend to the outside of the light-emitting member accommodating member 6, and inside the light-emitting member accommodating member 6, a semiconductor light-emitting element 3 and a thin lead wire 4 that emit light having a wavelength of 350 to 420 nm are provided. , 4 are connected to each other, and the light having the above-mentioned wavelength is introduced into a sealing material 5 such as a so-called chip-type light emitting diode having a structure in which the inside of the luminous body housing member 6 is sealed with the sealing material 5. Tetravalent Mn that emits light when excited (Mn 4+ ) is a red light-emitting phosphor in which a luminescent ion is formed and a trivalent Eu (Eu 3+ ) is a red light-emitting phosphor in which a luminescent ion is dispersed.
[0021]
In this case, if only the above-described red light emitting phosphor of the present invention is dispersed in the sealing material 5, a light emitting device that emits red light with high luminance is obtained, and BaMg 2 Al 16 O 27 : Eu, Mn, Zn 2 GeO. 4 : a green light-emitting phosphor such as Mn, or a blue phosphor such as BaMg 2 Al 16 O 27 : Eu, (Sr, Ca, Ba) 5 (PO 4 ) 3 Cl: Eu. The light emitting device emits white light or intermediate colors.
[0022]
Note that this light emitting device can be manufactured by mixing a sealing material such as resin, rubber, elastomer, and glass with a phosphor and sealing the semiconductor light emitting element and the like. In particular, when a plurality of types of phosphors are used, the red light-emitting phosphor of the present invention, when compared with a general phosphor, has a higher true specific gravity and sediments faster than other phosphors when mixed with a sealing material. May cause uneven color. Therefore, the red light-emitting phosphor of the present invention has a high viscosity, for example, a silicone rubber composition whose viscosity is adjusted with a thixotropic modifier, a silicone resin composition, or the like, and is mixed with a silicone resin composition. It is preferable to disperse them in In addition, a pigment, a dye, a pseudo-pigment, or the like may be added to the sealing material in addition to the above-described phosphor as a color tone conversion material.
[0023]
Next, a second embodiment of the light emitting device of the present invention will be described. The light-emitting device according to the second aspect is a light-emitting device in which a semiconductor light-emitting element that emits light having a wavelength of 350 to 420 nm is sealed in a sealing material. A fluorescent layer containing the above-described red light emitting phosphor of the present invention is provided on a road.
[0024]
Examples of red-emitting phosphor which the tetravalent Mn (Mn 4+) forms a luminescent ions, for example, 0.5MgF 2 · 3.5MgO · GeO 2 : Mn, Mg 2 TiO 4: Mn, α-Al 2 O 3 : Mn, LiAl 5 O 8 : Mn, Mg 6 As 2 O 11 : Mn or 6MgO · As 2 O 5 : Mn, etc., as a red light-emitting phosphor in which trivalent Eu (Eu 3+ ) forms a light-emitting ion, Y 2 O 2: Eu, La 2 O 2 S: Eu, include such LiEuW 2 O 8, these tetravalent Mn red-emitting phosphor (Mn 4+) forms a luminescent ion and trivalent Eu (Eu 3+) It is possible to change the delicate hue of red light by changing the ratio of the red light emitting phosphor to light emitting ions.
[0025]
More specifically, such a light emitting device includes, for example, a device in which a fluorescent layer containing the red light emitting phosphor of the present invention is provided on a semiconductor light emitting element or a sealing material. The leads 1 and 2, the semiconductor light emitting element 3 that emits light having a wavelength of 350 to 420 nm, and the thin lead wire 4 that electrically connects the semiconductor light emitting element 3 and the lead 2 as shown in FIG. A structure in which a phosphor layer 7 is provided on a semiconductor light-emitting element 3 of a so-called shell-type light-emitting diode and sealed together with the semiconductor light-emitting element 3 and the like having a shell-sealed structure, as shown in FIG. A pair of leads 1 and 2 are extended from the inner bottom of the box-shaped luminous body housing member 6 to the outside of the luminous body housing member 6, and light having a wavelength of 350 to 420 nm is emitted inside the luminous body housing member 6. Semiconductor light emitting element 3 and fine lead wires 4 and 4 A phosphor layer 7 is provided on a semiconductor light emitting element 3 of a so-called chip type light emitting diode having a structure in which the light emitting body housing member 6 is sealed with a sealing material 5 by connecting and connecting them. As shown in FIG. 6, a sealing layer of a shell type light emitting diode as shown in FIG. An example in which a fluorescent layer 7 is provided on a sealing material 5 of a chip-type light emitting diode is given. The configuration other than the fluorescent layer in FIGS. 5 and 6 is the same as the configuration shown in FIGS.
[0026]
Further, the fluorescent layer is not limited to a so-called transmissive type in which the fluorescent layer is provided inside the light emitting diode or adjacent to the light emitting diode as described above, and the fluorescent layer 7 is separated from the light emitting diode 8 as shown in FIG. A so-called reflection type light emitting device that is provided at a position and reflects light emitted from the fluorescent layer by the reflection plate 9 may also be used. Further, the fluorescent layer of the light emitting device in which the fluorescent layer is provided on the sealing material as shown in FIGS. 5 and 6 can be further sealed with the sealing material.
[0027]
In this case, if only the above-described red light-emitting phosphor of the present invention is dispersed in the fluorescent layer, a light-emitting device that emits red light with high luminance is obtained, and BaMg 2 Al 16 O 27 : Eu, Mn, Zn 2 GeO 4 : If dispersed together with a blue light-emitting phosphor such as Mn or a blue phosphor such as BaMg 2 Al 16 O 27 : Eu or (Sr, Ca, Ba) 5 (PO 4 ) 3 Cl: Eu, high brightness white or The light emitting device emits a neutral color.
[0028]
When the fluorescent layer is provided on the semiconductor light emitting element, the fluorescent substance may be used as it is or may be used by mixing with a binder. In this case, as shown in FIGS. 3 and 4, the fluorescent layer is sealed in a sealing material together with the semiconductor light emitting element.
[0029]
On the other hand, when the fluorescent layer is provided on the sealing material, it is preferable to use the red light-emitting phosphor dispersed in a translucent resin, rubber, elastomer, or glass, particularly, silicone resin or silicone rubber. In particular, when a plurality of types of phosphors are dispersed in the phosphor layer, a silicone rubber composition whose viscosity is adjusted with a thixotropic regulator, a silicone resin, as in the case where the red light-emitting phosphor of the present invention is dispersed in the sealing material described above. It is preferable that the composition is mixed with a composition or the like and dispersed in the fluorescent layer by a method of curing the composition. Further, the fluorescent layer may be a layer in which a phosphor is mixed, or a layer in which the phosphor is divided into several layers. In addition, a pigment, a dye, a pseudo-pigment, or the like may be added to the phosphor layer in addition to the phosphor described above as a color tone conversion material.
[0030]
【Example】
Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited to the following Examples.
[0031]
[Example 1]
As a red-emitting phosphor, 0.5MgF 2 · 3.5MgO · GeO 2 : Mn, Y 2 O 2: Eu, as a blue emitting phosphor (Sr, Ca, Ba) 5 (PO 4) 3 Cl: Eu, green A silicone rubber sheet (thickness: BaMg 2 Al 16 O 27 : Eu, Mn) mixed and dispersed in silicone rubber at a ratio of 5: 10: 1: 1 as shown in FIG. 0.5 mm) using a heating press machine, and this was covered on a sealing material of an ultraviolet LED having an emission wavelength of 380 nm to obtain a light emitting device as shown in FIG. 6 as a fluorescent layer.
[0032]
The light emitting device was turned on by passing a current of 20 mA through the integrating sphere, and the spectral distribution of the obtained light was measured with a spectral radiance meter PR-704 (manufactured by Photo Research). FIG. 8 shows the spectral distribution. The chromaticity of this light emitting device was white with x = 0.3542 and y = 0.3517. Further, as shown in FIG. 8, light emission at 630 nm from Y 2 O 2 : Eu and light emission at 662 nm from 0.5MgF 2 .3.5MgO.GeO 2 : Mn were confirmed from this spectral distribution, and red light was emitted. It was confirmed that the area was wide.
[0033]
[Example 2]
A light emitting device was obtained in the same manner as in Example 1 except that Mg 2 TiO 4 : Mn was used instead of 0.5MgF 2 .3.5 MgO.GeO 2 : Mn, and the light obtained from the light emitting device was dispersed. When the distribution was measured, light emission of 630 nm by Y 2 O 2 : Eu and light emission of 659 nm by Mg 2 TiO 4 : Mn were confirmed, and it was confirmed that red light had a wide light-emitting region.
[0034]
【The invention's effect】
As described above, the light-emitting device of the present invention is a light-emitting device that can efficiently emit red light with high luminance with respect to excitation light having a wavelength of 350 to 420 nm and emit light in a wide red region, and has good color rendering properties.
[0035]
The light-emitting device of the present invention is a light-emitting device that emits red light with stable intensity over a wide range of wavelengths from long-wavelength ultraviolet light to short-wavelength visible light, and particularly a green light-emitting phosphor and / or blue light. When used in combination with a luminescent phosphor, white or neutral colors can be efficiently emitted with high luminance and are less susceptible to fluctuations in the wavelength of the excitation light. When a white or intermediate color is displayed by causing the phosphor to emit light using light from a semiconductor light emitting element that emits light, a delicate color tone can be displayed more precisely and with good reproducibility.
[Brief description of the drawings]
FIG. 1 is a diagram showing an example of an optical device of the present invention, and is a cross-sectional view showing a light emitting device in which a red light emitting phosphor of the present invention is dispersed in a sealing material for a bullet-shaped light emitting diode.
FIG. 2 is a view showing an example of the optical device of the present invention, and is a cross-sectional view showing a light emitting device in which the red light emitting phosphor of the present invention is dispersed in a sealing material for a chip type light emitting diode.
FIG. 3 is a view showing an example of the optical device of the present invention, and is a cross-sectional view showing a light emitting device in which a fluorescent layer containing the red light emitting phosphor of the present invention is provided on a semiconductor light emitting element of a shell type light emitting diode; .
FIG. 4 is a view showing an example of the optical device of the present invention, and is a cross-sectional view showing a light emitting device in which a fluorescent layer containing the red light emitting phosphor of the present invention is provided on a semiconductor light emitting element of a chip type light emitting diode; .
FIG. 5 is a diagram showing an example of the optical device of the present invention, and is a cross-sectional view showing a light emitting device in which a phosphor layer containing the red light emitting phosphor of the present invention is provided on a sealing material of a bullet-shaped light emitting diode; .
FIG. 6 is a view showing an example of the optical device of the present invention, and is a cross-sectional view showing a light emitting device in which a fluorescent layer containing the red light emitting phosphor of the present invention is provided on a sealing material for a chip type light emitting diode; .
FIG. 7 is a cross-sectional view illustrating an example of the optical device of the present invention, in which a fluorescent layer is provided at a position separated from a light emitting diode and reflects light emitted from the fluorescent layer.
FIG. 8 is a diagram illustrating a spectral distribution of emitted light of the light emitting device according to the first embodiment.
[Explanation of symbols]
1, 2 lead 3 semiconductor light emitting element 4 lead thin wire 5 sealing material 6 luminous body accommodation member 7 fluorescent layer 8 light emitting diode 9 reflector

Claims (8)

波長が350〜420nmの光を発光する半導体発光素子が封止材内に封止されてなる発光装置であって、上記封止材に上記波長の光により励起されて発光する4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体及び3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体を分散させたことを特徴とする発光装置。A light-emitting device in which a semiconductor light-emitting element that emits light having a wavelength of 350 to 420 nm is sealed in a sealing material, wherein tetravalent Mn ( A light emitting device characterized by dispersing a red light emitting phosphor in which Mn 4+ ) forms a light emitting ion and a red light emitting phosphor in which trivalent Eu (Eu 3+ ) forms a light emitting ion. 更に、緑色発光蛍光体及び/又は青色発光蛍光体を分散させたことを特徴とする請求項1記載の発光装置。2. The light emitting device according to claim 1, further comprising a green light emitting phosphor and / or a blue light emitting phosphor dispersed therein. 波長が350〜420nmの光を発光する半導体発光素子が封止材内に封止されてなる発光装置であって、上記半導体発光素子から発光する光の光路上に、上記波長の光により励起されて発光する4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体及び3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体を含む蛍光層を設けたことを特徴とする発光装置。A light emitting device in which a semiconductor light emitting element that emits light having a wavelength of 350 to 420 nm is sealed in a sealing material, wherein the semiconductor light emitting element is excited by light of the wavelength on an optical path of light emitted from the semiconductor light emitting element. And a phosphor layer containing a red light-emitting phosphor in which tetravalent Mn (Mn 4+ ) emits light as a light-emitting ion and a red light-emitting phosphor in which trivalent Eu (Eu 3+ ) emits a light-emitting ion. Light emitting device. 更に、緑色発光蛍光体及び/又は青色発光蛍光体を含有することを特徴とする請求項3記載の発光装置。The light emitting device according to claim 3, further comprising a green light emitting phosphor and / or a blue light emitting phosphor. 上記半導体発光素子上又は封止材上に蛍光層を設けたことを特徴とする請求項3又は4記載の発光装置。The light emitting device according to claim 3, wherein a fluorescent layer is provided on the semiconductor light emitting element or the sealing material. 上記蛍光層が上記赤色発光蛍光体を樹脂、ゴム、エラストマー又はガラスに分散してなるものであることを特徴とする請求項3乃至5のいずれか1項記載の発光装置。The light emitting device according to any one of claims 3 to 5, wherein the phosphor layer is formed by dispersing the red light emitting phosphor in a resin, rubber, elastomer, or glass. 上記4価のMn(Mn4+)が発光イオンをなす赤色発光蛍光体が0.5MgF・3.5MgO・GeO:Mn、MgTiO:Mn、α−Al:Mn、LiAl:Mn、MgAs11:Mn又は6MgO・As:Mnであることを特徴とする請求項1乃至6のいずれか1項記載の発光装置。The red light-emitting phosphor in which the tetravalent Mn (Mn 4+ ) forms a light-emitting ion is 0.5MgF 2 .3.5MgO.GeO 2 : Mn, Mg 2 TiO 4 : Mn, α-Al 2 O 3 : Mn, LiAl The light emitting device according to claim 1, wherein the light emitting device is 5 O 8 : Mn, Mg 6 As 2 O 11 : Mn, or 6MgO · As 2 O 5 : Mn. 上記3価のEu(Eu3+)が発光イオンをなす赤色発光蛍光体がY:Eu、LaS:Eu又はLiEuWであることを特徴とする請求項1乃至7のいずれか1項記載の発光装置。 8. The red light emitting phosphor in which the trivalent Eu (Eu 3+ ) forms a light emitting ion is Y 2 O 2 : Eu, La 2 O 2 S: Eu or LiEuW 2 O 8. The light emitting device according to any one of claims 1 to 7.
JP2003126352A 2003-05-01 2003-05-01 Light emitting device Pending JP2004335579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003126352A JP2004335579A (en) 2003-05-01 2003-05-01 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003126352A JP2004335579A (en) 2003-05-01 2003-05-01 Light emitting device

Publications (1)

Publication Number Publication Date
JP2004335579A true JP2004335579A (en) 2004-11-25

Family

ID=33503316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003126352A Pending JP2004335579A (en) 2003-05-01 2003-05-01 Light emitting device

Country Status (1)

Country Link
JP (1) JP2004335579A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234639A (en) * 2006-02-27 2007-09-13 Kyocera Corp Light emitting device, and lighting system
JP2008069334A (en) * 2006-09-12 2008-03-27 Jiaotong Univ HIGHLY SATURATED RED LIGHT EMITTING Mn(IV)-ACTIVATED FLUORESCENT AND ITS MANUFACTURING PROCESS
WO2012050199A1 (en) * 2010-10-15 2012-04-19 三菱化学株式会社 White light emitting device and lighting device
CN104538390A (en) * 2014-12-06 2015-04-22 广东聚科照明股份有限公司 LED with high color rendering index and high brightness

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234639A (en) * 2006-02-27 2007-09-13 Kyocera Corp Light emitting device, and lighting system
JP2008069334A (en) * 2006-09-12 2008-03-27 Jiaotong Univ HIGHLY SATURATED RED LIGHT EMITTING Mn(IV)-ACTIVATED FLUORESCENT AND ITS MANUFACTURING PROCESS
US7846350B2 (en) * 2006-09-12 2010-12-07 National Chiao-Tung University Highly saturated red-emitting Mn(IV) activated phosphors and method of fabricating the same
JP2011162798A (en) * 2006-09-12 2011-08-25 Jiaotong Univ HIGHLY SATURATED, RED-EMITTING Mn(IV)-ACTIVATED PHOSPHOR AND METHOD OF FABRICATING THE SAME
WO2012050199A1 (en) * 2010-10-15 2012-04-19 三菱化学株式会社 White light emitting device and lighting device
JP2012104814A (en) * 2010-10-15 2012-05-31 Mitsubishi Chemicals Corp White light-emitting device and lighting fixture
JP2012169646A (en) * 2010-10-15 2012-09-06 Mitsubishi Chemicals Corp White light-emitting device and lighting apparatus
JP2012178574A (en) * 2010-10-15 2012-09-13 Mitsubishi Chemicals Corp White light-emitting apparatus and illumination instrument
US8890403B2 (en) 2010-10-15 2014-11-18 Mitsubishi Chemical Corporation White light-emitting device and illumination device
CN104538390A (en) * 2014-12-06 2015-04-22 广东聚科照明股份有限公司 LED with high color rendering index and high brightness

Similar Documents

Publication Publication Date Title
JP4767243B2 (en) White light source, backlight unit and LCD display
KR100946015B1 (en) White led device and light source module for lcd backlight using the same
JP5864851B2 (en) Light emitting device
JP4077170B2 (en) Semiconductor light emitting device
JP5127455B2 (en) White light emitting device and method for manufacturing the same, backlight using the same, and liquid crystal display device
KR100605211B1 (en) Phosphor and white led using the same
JP4945436B2 (en) White light-emitting lamp, backlight using the same, display device, and lighting device
WO2011033910A1 (en) White-light emitting lamp and white-light led lighting device using same
EP2056364A1 (en) Illuminating apparatus
JP2004031989A (en) Coating element, semiconductor light emitting element and method for manufacturing the same
KR20090057114A (en) Semiconductor light emitting device, backlight composed of the semiconductor light emitting device, and display device
WO2011129429A1 (en) Led light-emitting device
JP4238980B2 (en) Red light emitting phosphor and light emitting device
TWI428439B (en) Fluorescent tubes and LED bulbs using them
JP5323308B2 (en) Light emitting module
JP2006348262A (en) Light emitting device and red-emitting phosphor particle
JP4535236B2 (en) Fluorescent member, fluorescent member manufacturing method, and semiconductor light emitting device
JP4171890B2 (en) Red light emitting phosphor and light emitting device
JP2009073914A (en) Green light emitting phosphor and light emitting module using the same
JP2007173733A (en) Light emitting device
KR100649704B1 (en) Light emitting diode package and method for manufacturing the same
JP2004335579A (en) Light emitting device
JP4796548B2 (en) Luminescent display device
JP2007274009A5 (en)
JP4525907B2 (en) Green light emitting phosphor and light emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060404

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090210

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090624